JP6821281B2 - 活性ガス生成装置 - Google Patents
活性ガス生成装置 Download PDFInfo
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- JP6821281B2 JP6821281B2 JP2019565101A JP2019565101A JP6821281B2 JP 6821281 B2 JP6821281 B2 JP 6821281B2 JP 2019565101 A JP2019565101 A JP 2019565101A JP 2019565101 A JP2019565101 A JP 2019565101A JP 6821281 B2 JP6821281 B2 JP 6821281B2
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- 239000011261 inert gas Substances 0.000 title claims description 7
- 239000007789 gas Substances 0.000 claims description 427
- 239000002184 metal Substances 0.000 claims description 123
- 239000002994 raw material Substances 0.000 claims description 123
- 239000000470 constituent Substances 0.000 claims description 47
- 239000000498 cooling water Substances 0.000 claims description 37
- 230000015572 biosynthetic process Effects 0.000 claims description 14
- 239000007769 metal material Substances 0.000 claims description 9
- 230000003213 activating effect Effects 0.000 claims description 5
- 238000007599 discharging Methods 0.000 claims description 5
- 238000001816 cooling Methods 0.000 description 53
- 238000010926 purge Methods 0.000 description 38
- 238000009434 installation Methods 0.000 description 29
- 238000000034 method Methods 0.000 description 23
- 230000002159 abnormal effect Effects 0.000 description 22
- 238000005516 engineering process Methods 0.000 description 22
- 125000006850 spacer group Chemical group 0.000 description 20
- 230000002093 peripheral effect Effects 0.000 description 14
- 238000007789 sealing Methods 0.000 description 13
- 230000015556 catabolic process Effects 0.000 description 12
- 238000012545 processing Methods 0.000 description 12
- 239000000463 material Substances 0.000 description 10
- 230000007246 mechanism Effects 0.000 description 10
- 230000008569 process Effects 0.000 description 10
- 230000000694 effects Effects 0.000 description 9
- 230000005684 electric field Effects 0.000 description 9
- 239000000126 substance Substances 0.000 description 8
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 7
- 238000011109 contamination Methods 0.000 description 7
- 230000000149 penetrating effect Effects 0.000 description 5
- 230000004888 barrier function Effects 0.000 description 4
- 239000000919 ceramic Substances 0.000 description 3
- 230000008020 evaporation Effects 0.000 description 3
- 238000001704 evaporation Methods 0.000 description 3
- 238000009413 insulation Methods 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 229910052755 nonmetal Inorganic materials 0.000 description 3
- 238000005452 bending Methods 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000010304 firing Methods 0.000 description 2
- 238000003825 pressing Methods 0.000 description 2
- 238000007639 printing Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 238000005019 vapor deposition process Methods 0.000 description 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 241000519995 Stachys sylvatica Species 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
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Description
以下での述べる実施の形態で共通する活性ガス生成装置の特徴箇所について説明する。高圧側電極構成部及び接地側電極構成部を対向的に一対配置することにより、誘電体バリア放電の活性ガス生成用電極群としている。活性ガス生成用電極群において、高圧側電極構成部及び接地側電極構成部間に放電空間が形成される。
図4はこの発明の前提技術である活性ガス生成装置の断面構造を模式的に示す説明図である。図5は前提技術の活性ガス生成装置の主要構成部を分解した状態で示す説明図である。なお、図4及び図5それぞれにXYZ直交座標系を示している。
(第1の課題)
カバー31、カバー32及び電極構成部設置台33(以下、「カバー31等」と略記する場合あり)と金属筐体34との間において垂直方向に各2か所にてシールを実施している。
図4で図示しているOリング70の全ての締め付けを、カバー−31と金属筐体34との間におけるボルト等の締付機構76による締め付けのみで行っている。この場合、トータルとしての締付機構76へのボルト軸力を相当大きなものとする必要が生じ、それによる非金属部品である電極構成部設置台33やカバー32への破損リスクが増大してしまい、同時に各Oリング70が確実にシールされない可能性が発生する。
接地側電極構成部2Aと電極構成部設置台33との間に設けている中央部近辺のOリング70を直上から押し付ける機構が無い。前提技術の場合、接地側電極構成部2Aに加えた締付力は接地側電極構成部2A自体を経由して、下方のOリング70を押さえる形態となるため、過度の曲げ強度が接地側電極構成部2Aに発生して破損リスクが高まり、かつ、下方のOリング70のシールを確実に実施することができない可能性がある。
活性ガス生成用電極群301を接地側電極構成部2A側から支持する電極構成部設置台33を活性ガス生成用電極群301の別部品として設けているため、接地側電極構成部2Aと電極構成部設置台33との間にわずかな隙間が生じた場合でも、その隙間において異常放電が発生する可能性があった。
前提技術は、全体的にOリング70の数が多過ぎる。Oリング70の個数の増大は締付力の増大を招くだけでは無く、リークリスクを高めることとなる問題点があった。
前提技術は、放電空間66や金属筐体34の空洞部の底面34bの近傍等、高温になる箇所にOリング70を設けている。Oリング70は一般的に、その耐熱上限温度以下であってもその温度に近い領域では構成物質の蒸発が生じかつ微小リークが発生することが知られている。
筐体接触空間R34が周囲をOリング70にてシールされた閉空間となっている。組立時には既に閉空間となっているため筐体接触空間R34は大気圧であり、運転開始によって金属筐体34の温度が上昇した場合、その熱伝導によって筐体接触空間R34内のガスの温度が上昇する。しかし、筐体接触空間R34は閉空間であるためガスの逃げ場が存在せず圧力の上昇を招き、結果的に金属筐体34やカバー32等に対する過大な荷重源となってしまう懸念がある。
図5に示すように、高圧側電極構成部1Aと接地側電極構成部2A間の放電空間66のギャップ長を規定するための部位としてクサビ形段差形状部51、直線形段差形状部52A及び52B、スペーサ37が設けられている。
図1はこの発明の実施の形態である活性ガス生成装置の断面構造を模式的に示す説明図である。図2は活性ガス生成用電極群300の断面構成を示す説明図である。図3は実施の形態の活性ガス生成装置の主要構成部を分解した状態で示す説明図である。なお、図1〜図3それぞれにXYZ直交座標系を示している。
本実施の形態の活性ガス生成装置において、交流電圧印加空間R11は放電空間68から分離して設けられており、第1及び第2の補助部材であるカバー11、カバー12及び冷却台13は、交流電圧印加空間R11と独立して、外部から供給される原料ガスを放電空間68に導く、原料ガス供給経路用の原料ガス流路11h、12h、13h、及び13mを有することにより、放電空間68と交流電圧印加空間R11とのガスの流れを分離している。
本実施の形態の活性ガス生成装置では、放電空間68の圧力は概ね10kPa〜30kPa程度の比較的弱い弱大気圧に設定されている。なお、上記圧力設定における原料ガスとして例えば窒素ガス(100%)が考えられる。
2X 接地側電極構成部
11,12 カバー
13 冷却台
2m,11h,12h,13h,13m 原料ガス流路
11e パージガス排出口
11p パージガス供給口
11w,12w,13w 冷却水経路
300 活性ガス生成用電極群
Claims (4)
- 第1の電極構成部(1X)と前記第1の電極構成部の下方に設けられる第2の電極構成部(2X)とを有する活性ガス生成用電極群(300)と、前記第1及び第2の電極構成部に前記第1の電極構成部が高電圧となるように交流電圧を印加する交流電源部(5)とを有する活性ガス生成装置であって、
前記第1の電極構成部は、第1の誘電体電極(110)と前記第1の誘電体電極の上面上に形成される第1の金属電極(100H,100L)とを有し、前記第2の電極構成部は、第2の誘電体電極(210)と前記第2の誘電体電極の下面上に形成される第2の金属電極(200H,200L)とを有し、前記交流電圧の印加により前記第1及び第2の誘電体電極が対向する誘電体空間内において、前記第1及び第2の金属電極が平面視重複する領域である放電空間形成領域を放電空間として含み、
前記交流電源部による前記交流電圧の印加により、前記放電空間に放電現象を発生させ、前記放電空間に供給された原料ガスを活性化して得られる活性ガスが前記第2の電極構成部に設けられたガス噴出口(25)から噴出され、
前記活性ガス生成装置は、
前記活性ガス生成用電極群の側面及び上面を取り囲むように設けられる第1の補助部材(11,12)と、
上部の主要面上に前記活性ガス生成用電極群及び前記第1の補助部材を配置する第2の補助部材(13)とを備え、
前記第1及び第2の補助部材によって、前記活性ガス生成用電極群との間に前記放電空間と分離して交流電圧印加空間(R11)が形成され、前記第2の補助部材は、前記ガス噴出口から噴出される活性ガスを通過させる補助部材用ガス排出口(13k)を有し、前記第1及び第2の補助部材は一体的に連結され、
前記活性ガス生成装置は、
前記活性ガス生成用電極群及び前記第2の補助部材の全てと、前記第1の補助部材の少なくとも一部とを収容する空洞部を有する金属製の筐体(14)をさらに備え、前記筐体は前記補助部材用ガス排出口を通過する活性ガスを外部に排出する筐体用ガス排出口(14k)を有し、前記筐体と前記第1及び第2の補助部材との間に筐体接触空間(R14)が設けられ、
前記第1及び第2の補助部材は、前記交流電圧印加空間と独立して、外部から供給される原料ガスを前記放電空間に導く、原料ガス供給経路用の原料ガス流路(11h,12h,13h,13m)を有することにより、前記放電空間と前記交流電圧印加空間とのガスの流れを分離し、
前記活性ガス生成装置は、さらに 以下の特徴(1)〜(5)を有する、
(1) 前記第2の電極構成部が前記第1の電極構成部を支持する態様で前記活性ガス生成用電極群が構成される、
(2) 前記第1の誘電体電極は、前記放電空間形成領域以外の放電空間外領域において下方に突出する段差部(115H,115M,115L)を有し、前記段差部の形成高さによって前記放電空間のギャップ長が規定される、
(3) 前記第1及び第2の誘電体電極はそれぞれ前記放電空間形成領域の厚みを、前記放電空間外領域より薄く形成する、
(4) 前記筐体は空洞部外の上面のみにおいて、前記第1の補助部材と締結することにより、前記第1の補助部材の側面及び前記第2の補助部材の底面に接触することなく、空洞部内に前記筐体接触空間を形成する、
(5) 前記第1及び第2の補助部材は全て金属材料で構成される、
活性ガス生成装置。 - 請求項1記載の活性ガス生成装置であって、
前記第1及び第2の補助部材は、外部から供給される冷却水を前記第2の補助部材に導く、冷却水流通経路用の冷却水経路(11w,12w,13w)を有することを特徴とする、
活性ガス生成装置。 - 請求項1記載の活性ガス生成装置であって、
前記第1の補助部材は外部から原料ガス以外の第2のガスを前記交流電圧印加空間に供給する第2ガス供給口(11p)をさらに有し、前記第2ガス供給口は前記原料ガス流路と独立して設けられる、
活性ガス生成装置。 - 請求項1から請求項3のうち、いずれか1項に記載の活性ガス生成装置であって、
前記放電空間の圧力に比べ、前記交流電圧印加空間の圧力を高く設定したことを特徴とする、
活性ガス生成装置。
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