WO2008132901A1 - プラズマ処理装置 - Google Patents

プラズマ処理装置 Download PDF

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Publication number
WO2008132901A1
WO2008132901A1 PCT/JP2008/055280 JP2008055280W WO2008132901A1 WO 2008132901 A1 WO2008132901 A1 WO 2008132901A1 JP 2008055280 W JP2008055280 W JP 2008055280W WO 2008132901 A1 WO2008132901 A1 WO 2008132901A1
Authority
WO
WIPO (PCT)
Prior art keywords
container
bottom plate
processing apparatus
cover
plasma processing
Prior art date
Application number
PCT/JP2008/055280
Other languages
English (en)
French (fr)
Inventor
Hiroto Takeuchi
Susumu Yashiro
Original Assignee
Sekisui Chemical Co., Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sekisui Chemical Co., Ltd. filed Critical Sekisui Chemical Co., Ltd.
Priority to JP2009511714A priority Critical patent/JP4647705B2/ja
Publication of WO2008132901A1 publication Critical patent/WO2008132901A1/ja

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/32798Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32816Pressure
    • H01J37/32825Working under atmospheric pressure or higher

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

【課題】プラズマ処理装置の組み立て作業を容易化する。 【解決手段】プラズマ処理装置の接地電極としての噴出孔11a付きの底板11と枠12と蓋13からなる容器10の内部に、固体誘電体からなる電界印加側誘電部材30収容し、容器内を底板側の放電空間10eと蓋側の電極収容部10aとに仕切り、収容部10aに電界印加電極30を収容する。容器10と誘電部材30との連結、底板11と枠12との連結、枠12と蓋13との連結を、基端部を蓋側に向け先端部を底板側に向けたネジ51~53にて行なう。
PCT/JP2008/055280 2007-04-19 2008-03-21 プラズマ処理装置 WO2008132901A1 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2009511714A JP4647705B2 (ja) 2007-04-19 2008-03-21 プラズマ処理装置

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007110054 2007-04-19
JP2007-110054 2007-04-19

Publications (1)

Publication Number Publication Date
WO2008132901A1 true WO2008132901A1 (ja) 2008-11-06

Family

ID=39925364

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/055280 WO2008132901A1 (ja) 2007-04-19 2008-03-21 プラズマ処理装置

Country Status (3)

Country Link
JP (1) JP4647705B2 (ja)
TW (1) TW200850079A (ja)
WO (1) WO2008132901A1 (ja)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015076328A (ja) * 2013-10-10 2015-04-20 株式会社ケイテックリサーチ プラズマ処理装置
WO2018104988A1 (ja) * 2016-12-05 2018-06-14 東芝三菱電機産業システム株式会社 活性ガス生成装置
WO2019138456A1 (ja) * 2018-01-10 2019-07-18 東芝三菱電機産業システム株式会社 活性ガス生成装置

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001087643A (ja) * 1999-09-22 2001-04-03 Pearl Kogyo Kk プラズマ処理装置
JP2002180257A (ja) * 2000-12-18 2002-06-26 Fuji Electric Co Ltd プラズマ処理装置と薄膜形成方法および表面処理方法
JP2003303816A (ja) * 2002-03-29 2003-10-24 Samsung Electronics Co Ltd 半導体基板を加工するための電極組立体及びこれを有する加工装置
JP2004006211A (ja) * 2001-09-27 2004-01-08 Sekisui Chem Co Ltd プラズマ処理装置
JP2004288452A (ja) * 2003-03-20 2004-10-14 Sekisui Chem Co Ltd プラズマ処理装置
JP2004327394A (ja) * 2003-04-28 2004-11-18 Sekisui Chem Co Ltd プラズマ処理装置
JP2005302681A (ja) * 2003-05-14 2005-10-27 Sekisui Chem Co Ltd プラズマ処理装置

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1996031997A1 (fr) * 1995-04-07 1996-10-10 Seiko Epson Corporation Equipement de traitement de surface
JP5021877B2 (ja) * 2001-09-27 2012-09-12 積水化学工業株式会社 放電プラズマ処理装置
JP4401928B2 (ja) * 2003-06-04 2010-01-20 積水化学工業株式会社 プラズマ処理装置

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001087643A (ja) * 1999-09-22 2001-04-03 Pearl Kogyo Kk プラズマ処理装置
JP2002180257A (ja) * 2000-12-18 2002-06-26 Fuji Electric Co Ltd プラズマ処理装置と薄膜形成方法および表面処理方法
JP2004006211A (ja) * 2001-09-27 2004-01-08 Sekisui Chem Co Ltd プラズマ処理装置
JP2003303816A (ja) * 2002-03-29 2003-10-24 Samsung Electronics Co Ltd 半導体基板を加工するための電極組立体及びこれを有する加工装置
JP2004288452A (ja) * 2003-03-20 2004-10-14 Sekisui Chem Co Ltd プラズマ処理装置
JP2004327394A (ja) * 2003-04-28 2004-11-18 Sekisui Chem Co Ltd プラズマ処理装置
JP2005302681A (ja) * 2003-05-14 2005-10-27 Sekisui Chem Co Ltd プラズマ処理装置

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015076328A (ja) * 2013-10-10 2015-04-20 株式会社ケイテックリサーチ プラズマ処理装置
WO2018104988A1 (ja) * 2016-12-05 2018-06-14 東芝三菱電機産業システム株式会社 活性ガス生成装置
JPWO2018104988A1 (ja) * 2016-12-05 2019-03-28 東芝三菱電機産業システム株式会社 活性ガス生成装置
KR20190077488A (ko) * 2016-12-05 2019-07-03 도시바 미쓰비시덴키 산교시스템 가부시키가이샤 활성 가스 생성 장치
KR102127084B1 (ko) 2016-12-05 2020-06-25 도시바 미쓰비시덴키 산교시스템 가부시키가이샤 활성 가스 생성 장치
US10840065B2 (en) * 2016-12-05 2020-11-17 Toshiba Mitsubishi-Electric Industrial Systems Corporation Active gas generation apparatus including a metal housing, first and second auxiliary members, and a housing contact
WO2019138456A1 (ja) * 2018-01-10 2019-07-18 東芝三菱電機産業システム株式会社 活性ガス生成装置
KR20200096607A (ko) * 2018-01-10 2020-08-12 도시바 미쓰비시덴키 산교시스템 가부시키가이샤 활성 가스 생성 장치
JPWO2019138456A1 (ja) * 2018-01-10 2020-10-01 東芝三菱電機産業システム株式会社 活性ガス生成装置
EP3740045A4 (en) * 2018-01-10 2021-09-29 Toshiba Mitsubishi-Electric Industrial Systems Corporation ACTIVE GAS GENERATING DEVICE
KR102465845B1 (ko) 2018-01-10 2022-11-11 도시바 미쓰비시덴키 산교시스템 가부시키가이샤 활성 가스 생성 장치

Also Published As

Publication number Publication date
JP4647705B2 (ja) 2011-03-09
TW200850079A (en) 2008-12-16
JPWO2008132901A1 (ja) 2010-07-22

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