WO2019136978A1 - 一种提高闪存可利用率的方法 - Google Patents

一种提高闪存可利用率的方法 Download PDF

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Publication number
WO2019136978A1
WO2019136978A1 PCT/CN2018/099757 CN2018099757W WO2019136978A1 WO 2019136978 A1 WO2019136978 A1 WO 2019136978A1 CN 2018099757 W CN2018099757 W CN 2018099757W WO 2019136978 A1 WO2019136978 A1 WO 2019136978A1
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Prior art keywords
flash memory
logical
flash
data
units
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PCT/CN2018/099757
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English (en)
French (fr)
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蔡定国
李庭育
许豪江
黄中柱
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江苏华存电子科技有限公司
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Publication of WO2019136978A1 publication Critical patent/WO2019136978A1/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/14—Measuring as part of the manufacturing process for electrical parameters, e.g. resistance, deep-levels, CV, diffusions by electrical means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps

Definitions

  • the present invention relates to the field of flash memory technology, and in particular to a method for improving flash memory availability.
  • Flash memory is a long-lived non-volatile memory that retains stored data information in the event of a power outage. Data deletion is not in a single byte but in a fixed block. The block size is typically 256KB to 20MB. Flash memory is a variant of electronically erasable read-only memory (EEPROM). Unlike flash memory, EEPROM can be erased and rewritten at the byte level instead of the entire chip eraser, while most chips in flash require a block erase. except. Since it can still save data when it is powered off, flash memory is usually used to save setup information, such as saving data in the computer's BIOS (basic program), PDA (personal digital assistant), digital camera, etc.; flash memory is moving toward large capacity and low The development of power consumption and low cost.
  • BIOS basic program
  • PDA personal digital assistant
  • the flash memory has high read/write speed and low power consumption.
  • the flash hard disk that is, the SSD hard disk, has appeared on the market, and the cost performance of the hard disk is further improved. As manufacturing processes increase and costs decrease, flash memory will appear more in everyday life.
  • Flash memory is a non-disappearing memory device.
  • the flash memory stores one bit from a memory unit, the number of erasing times is 100,000 times, and the evolution to a memory unit stores two bits, and the number of erasing times is 5,000 to 10,000 times, to the newly proposed memory. Three bits are stored in the unit, and the number of times of erasing is 1000 times. New flash memory is introduced, with reduced lifetime and reduced lifetime resulting in increased error bit rates. Therefore, it is an important issue to increase the correctness of data.
  • Flash memory is a non-disappearing memory device. It consists of pages, and the set of blocks becomes a logical unit.
  • the large-capacity flash memory has more than one logical unit and has 2, 4, 8... logical units.
  • low-quality flash memory with poor quality is often accompanied by a logic unit that cannot be used. This can cause the flash firmware to require 2 N-th logical units (except one logical unit).
  • the general way to improve the utilization rate is only for the processing of pages or blocks. When the damage of the logic unit level is encountered, only the entire flash memory can be abandoned.
  • the present invention provides the following technical solution: a method for improving flash memory availability, comprising the following steps:
  • the flash logic unit in the step A has 1024 blocks, each block has 256 pages, and each page has 32 sectors combined.
  • the beneficial effects of the present invention are: in the present invention, first determining the identification numbers of the logical units of the flash memory to see if they exist, and then writing test data to all the spaces of the flash memory, and then comparing the data in the next step. Then analyze the results of the previous test. If all the logic units are normal, go directly to the production state. If there is a logic unit that cannot be used, use the hardware to re-address the flash logic unit, and then select the number of logical units that can conform to the rule for production.
  • the invention can achieve the purpose of improving the utilization rate of the flash memory and reducing the loss of the customer.
  • Figure 1 is a flow chart of the present invention.
  • the present invention provides a technical solution: a method for improving flash memory availability, including the following steps:
  • the flash logical unit is relocated by hardware, and the number of logical units that can conform to the rule is selected for production.
  • the flash memory has 4 logical units with positions 0, 1, 2, and 3 respectively. If the logical unit at position 1 is damaged, it is replaced by position 2 or 3 according to the capacity. If 2 is used instead, the production can use logic. Units 0, 2, open half capacity production, and vice versa. In this way, the utilization of flash memory can be improved and the loss of customers can be reduced.
  • the identification numbers of the logical units of the flash memory are determined to see if they exist, and then the test data is written into all the spaces of the flash memory, and the data is compared in the next step, and then the results of the previous test are analyzed, and if all the logic units are normal, Then directly enter the production state, if there is a logic unit can not be used, then use the hardware to re-address the flash logic unit, and pick the number of logical units that can meet the rules for production.
  • the invention can improve the utilization of the flash memory and reduce the loss of the customer. purpose.

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)
  • Read Only Memory (AREA)

Abstract

本发明公开了一种提高闪存可利用率的方法，首先判断闪存各逻辑单元的辨识号,看是否都存在,接着对闪存所有空间写入测试资料,下一步进行资料的对比,再来分析前面测试的结果,如果所有逻辑单元都正常,则直接进入生产状态,如果有逻辑单元不能使用,则利用硬件将闪存逻辑单元重新定址后,挑能符合规则的逻辑单元数量进行生产，本发明可以达到提高闪存的利用率,减少客户的损失的目的。

Description

一种提高闪存可利用率的方法 技术领域
本发明涉及闪存技术领域，具体为一种提高闪存可利用率的方法。
背景技术
闪存是一种长寿命的非易失性(在断电情况下仍能保持所存储的数据信息)的存储器，数据删除不是以单个的字节为单位而是以固定的区块为单位，区块大小一般为256KB到20MB。闪存是电子可擦除只读存储器(EEPROM)的变种，闪存与EEPROM不同的是，EEPROM能在字节水平上进行删除和重写而不是整个芯片擦写，而闪存的大部分芯片需要块擦除。由于其断电时仍能保存数据，闪存通常被用来保存设置信息，如在电脑的BIOS(基本程序)、PDA(个人数字助理)、数码相机中保存资料等；闪存正朝大容量、低功耗、低成本的方向发展。与传统硬盘相比，闪存的读写速度高、功耗较低，市场上已经出现了闪存硬盘，也就是SSD硬盘，该硬盘的性价比进一步提升。随着制造工艺的提高、成本的降低，闪存将更多地出现在日常生活之中。
闪存为非消失性的存储器装置，闪存从一个存储器单元里存放一比特，擦写次数10万次，演进到一个存储器单元里存放二比特，擦写次数5000到10000次，到最新提出的一个存储器单元里存放三比特，擦写次数1000次。新的闪存推出，使用寿命减少，寿命减少会 导致错误比特发生率提高。因此能增加数据正确性，成为一个重要的议题。
闪存为非消失性的存储器装置，由页组成块，再由块组成的集合成为逻辑单元,而大容量的闪存不只一個逻辑单元,有2,4,8…等个逻辑单元。但是品质较差的大容量闪存时常伴随着某个逻辑单元无法使用的状况,这样在闪存固件需要2的N次幂个逻辑单元(除了1个逻辑单元之外)的操作下,会导致无法使用。另外普遍提高利用率的方式仅针对页或块做处理,遇到逻辑单元层面的损坏就只能将整颗闪存放弃。
发明内容
本发明的目的在于提供一种提高闪存可利用率的方法，以解决上述背景技术中提出的问题。
为实现上述目的，本发明提供如下技术方案：一种提高闪存可利用率的方法，包括以下步骤：
A、首先判断闪存各逻辑单元的辨识号,看是否都存在；
B、接着对闪存所有空间写入测试资料,下一步进行资料的对比,再来分析前面测试的结果；
C、如果所有逻辑单元都正常,则直接进入生产状态,；
D、如果有逻辑单元不能使用,则利用硬件将闪存逻辑单元重新 定址后,挑能符合规则的逻辑单元数量进行生产。
优选的，所述步骤A中的闪存逻辑单元有1024个块，每个块有256个页，每个页有32个扇形组合而成。
与现有技术相比，本发明的有益效果是：本发明中，首先判断闪存各逻辑单元的辨识号,看是否都存在,接着对闪存所有空间写入测试资料,下一步进行资料的对比,再来分析前面测试的结果,如果所有逻辑单元都正常,则直接进入生产状态,如果有逻辑单元不能使用,则利用硬件将闪存逻辑单元重新定址后,挑能符合规则的逻辑单元数量进行生产，本发明可以达到提高闪存的利用率,减少客户的损失得目的。
附图说明
图1为本发明流程图。
具体实施方式
下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。
请参阅图1，本发明提供一种技术方案：一种提高闪存可利用率 的方法，包括以下步骤：
A、首先判断闪存各逻辑单元的辨识号,看是否都存在；其中，闪存逻辑单元有1024个块，每个块有256个页，每个页有32个扇形组合而成；
B、接着对闪存所有空间写入测试资料,下一步进行资料的对比,再来分析前面测试的结果；
C、如果所有逻辑单元都正常,则直接进入生产状态,；
D、如果有逻辑单元不能使用,则利用硬件将闪存逻辑单元重新定址后,挑能符合规则的逻辑单元数量进行生产。
举例说明:闪存有4个逻辑单元,位置分别为0,1,2,3,假设位置1的逻辑单元损坏,则根据容量用位置2或3去替代,如果用2替代,则生产可使用逻辑单元0,2,开半容生产,反之亦然。这样就可以达到提高闪存的利用率,减少客户的损失。
本发明中，首先判断闪存各逻辑单元的辨识号,看是否都存在,接着对闪存所有空间写入测试资料,下一步进行资料的对比,再来分析前面测试的结果,如果所有逻辑单元都正常,则直接进入生产状态,如果有逻辑单元不能使用,则利用硬件将闪存逻辑单元重新定址后,挑能符合规则的逻辑单元数量进行生产，本发明可以达到提高闪存的利用率,减少客户的损失得目的。
尽管已经示出和描述了本发明的实施例，对于本领域的普通技术人员而言，可以理解在不脱离本发明的原理和精神的情况下可以对这些实施例进行多种变化、修改、替换和变型，本发明的范围由所附权利要求及其等同物限定。

Claims (2)

  1. 一种提高闪存可利用率的方法，其特征在于：包括以下步骤：
    A、首先判断闪存各逻辑单元的辨识号,看是否都存在；
    B、接着对闪存所有空间写入测试资料,下一步进行资料的对比,再来分析前面测试的结果；
    C、如果所有逻辑单元都正常,则直接进入生产状态,；
    D、如果有逻辑单元不能使用,则利用硬件将闪存逻辑单元重新定址后,挑能符合规则的逻辑单元数量进行生产。
  2. 根据权利要求1所述的一种提高闪存可利用率的方法，其特征在于：所述步骤A中的闪存逻辑单元有1024个块，每个块有256个页，每个页有32个扇形组合而成。
PCT/CN2018/099757 2018-01-12 2018-08-09 一种提高闪存可利用率的方法 WO2019136978A1 (zh)

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CN108054114A (zh) * 2018-01-12 2018-05-18 江苏华存电子科技有限公司 一种提高闪存可利用率的方法
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