WO2019119596A1 - 触控显示装置及其制作方法 - Google Patents

触控显示装置及其制作方法 Download PDF

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Publication number
WO2019119596A1
WO2019119596A1 PCT/CN2018/073347 CN2018073347W WO2019119596A1 WO 2019119596 A1 WO2019119596 A1 WO 2019119596A1 CN 2018073347 W CN2018073347 W CN 2018073347W WO 2019119596 A1 WO2019119596 A1 WO 2019119596A1
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Prior art keywords
sensing
layer
thin film
electrode structure
film transistor
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PCT/CN2018/073347
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English (en)
French (fr)
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冯校亮
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武汉华星光电半导体显示技术有限公司
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Priority to US15/754,584 priority Critical patent/US10720475B2/en
Publication of WO2019119596A1 publication Critical patent/WO2019119596A1/zh

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    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G06F3/044Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means
    • G06F3/0445Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means using two or more layers of sensing electrodes, e.g. using two layers of electrodes separated by a dielectric layer
    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G06F3/0412Digitisers structurally integrated in a display
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • H10K50/80Constructional details
    • H10K50/805Electrodes
    • H10K50/81Anodes
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • H10K50/80Constructional details
    • H10K50/805Electrodes
    • H10K50/82Cathodes
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/40OLEDs integrated with touch screens
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10OLED displays
    • H10K59/12Active-matrix OLED [AMOLED] displays
    • H10K59/131Interconnections, e.g. wiring lines or terminals
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80Constructional details
    • H10K59/805Electrodes
    • H10K59/8052Cathodes
    • H10K59/80521Cathodes characterised by their shape
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80Constructional details
    • H10K59/87Passivation; Containers; Encapsulations
    • H10K59/873Encapsulations

Definitions

  • the present invention relates to the field of touch display technology, and in particular to a touch display device and a method for fabricating the same.
  • OLED Organic Light Emitting Diode
  • VR virtual reality
  • touch technology is increasingly attached to display technology and becomes an essential accessory function of display device products.
  • display accuracy becomes higher and higher, the technical requirements for touch are gradually improved, and the accuracy and sensitivity of touch will become an important factor in the display experience.
  • an object of the present invention is to provide a touch display device capable of embedding a touch technology into an OLED display to achieve high touch precision and sensitivity, and a method of fabricating the same.
  • a touch display device includes: a substrate; a thin film transistor layer disposed on the substrate, the thin film transistor layer including a thin film transistor; and an anode disposed on the thin film transistor layer And contacting the source or the drain of the thin film transistor; the first touch electrode structure is disposed on the thin film transistor layer and insulated from the anode; and the first flat layer is disposed on the first touch On the electrode structure, the thin film transistor layer and the anode, the first planar layer has a first via hole exposing the anode; the second touch electrode structure is disposed on the first planar layer; and the OLED a device disposed on the anode; a cathode disposed on the first planar layer and insulated from the second touch electrode structure, the cathode filling the first via to contact the OLED device; a layer disposed on the cathode and the first planar layer.
  • the touch display device further includes: an insulating protective layer disposed between the first flat layer and the cathode and covering the second touch electrode structure.
  • the first touch electrode structure includes a plurality of first sensing strings, the plurality of first sensing strings are parallel and separated from each other, and each of the first sensing strings extends in a first direction, each of the first A sensing string includes a plurality of first sensing pads connected in series and a plurality of first bridge wires.
  • the second touch electrode structure includes a plurality of second sensing strings, the plurality of second sensing strings are parallel and separated from each other and each of the second sensing strings is perpendicular to the first direction The second direction extends, and each of the second sensing strings includes a plurality of second sensing pads connected in series and a plurality of second bridge wires.
  • the shape of the first sensing pad and/or the second sensing pad is one of a rectangular shape, a mesh shape, a diamond shape, a triangle shape, a regular pentagon shape, a regular hexagon shape, and a positive eight shape.
  • the touch display device further includes a plurality of binding pads and a plurality of traces, each of the first sensing strings being connected to a corresponding one of the binding pads by a corresponding one of the wires, each second sensing The string is connected to the corresponding one of the binding pads through a corresponding one of the traces.
  • a method of fabricating a touch display device includes: providing a substrate; forming a thin film transistor layer including a thin film transistor on the substrate; and forming the thin film transistor layer on the thin film transistor layer Forming an anode that is in contact with a source or a drain of the thin film transistor; forming a first touch electrode structure insulated from the anode on the thin film transistor layer; and the first touch electrode structure and the thin film Forming a first planar layer on the transistor layer and the anode; forming a second touch electrode structure on the first planar layer; forming a first via hole exposing the anode in the first planar layer Forming an OLED device on the anode; forming a cathode on the first planar layer that is insulated from the second touch electrode structure, the cathode filling the first via to contact the OLED device Forming an encapsulation layer on the cathode and the first planar layer.
  • a method of fabricating a touch display device includes: providing a substrate; forming a thin film transistor layer including a thin film transistor on the substrate; and forming the thin film transistor layer on the thin film transistor layer Forming an anode that is in contact with a source or a drain of the thin film transistor; forming a first touch electrode structure insulated from the anode on the thin film transistor layer; and the first touch electrode structure and the thin film Forming a first planar layer on the transistor layer and the anode; forming a second touch electrode structure on the first planar layer; forming on the first planar layer and the second touch electrode structure An insulating protective layer; forming a first via hole exposing the anode in the first flat layer and the insulating protective layer; forming an OLED device on the anode; forming a cathode on the insulating protective layer The cathode fills the first via to contact the OLED device; forming an encapsulation layer on the cathode and
  • the method for manufacturing the touch display device further includes: forming a plurality of bonding pads and a plurality of traces on the substrate; wherein each of the first sensing strings is connected to the corresponding one through a corresponding one of the traces A binding pad, each of the second sensing strings is connected to a corresponding one of the binding pads by a corresponding one of the traces.
  • the invention has the beneficial effects that the touch electrode structure is embedded in the OLED display, and the in-cell touch OLED display is realized, and at the same time, since the distance between the OLED devices is relatively small, the in-line type can be realized. High-precision touch production of touch OLED displays.
  • FIG. 1 is a schematic cross-sectional view of a touch display device in accordance with an embodiment of the present invention
  • FIG. 2 is a schematic view showing the arrangement of an anode and a first touch electrode structure according to an embodiment of the present invention
  • FIG. 3 is a schematic view showing the arrangement of an anode, a cathode, and a second touch electrode structure according to an embodiment of the present invention
  • FIG. 4 is a schematic diagram of connection of a touch electrode structure and a bonding pad according to an embodiment of the invention.
  • FIG. 5 is a flowchart of a method of fabricating a touch display device according to an embodiment of the invention.
  • FIG. 6 is a schematic cross-sectional view of a touch display device according to another embodiment of the present invention.
  • FIG. 7 is a flowchart of a method of fabricating a touch display device according to another embodiment of the present invention.
  • FIG. 1 is a schematic cross-sectional view of a touch display device in accordance with an embodiment of the present invention.
  • a touch display device includes a substrate 100 , a thin film transistor layer 200 , an anode 300 , a first touch electrode structure 400 , a first planar layer 500 , and a second touch electrode structure 600 .
  • the substrate 100 may be, for example, a glass substrate or a resin substrate.
  • the thin film transistor layer 200 is disposed on the substrate 100, and the thin film transistor layer 200 is composed of a plurality of thin film transistors arranged in an array. In Fig. 1, only the structure of two thin film transistors is shown, it being understood that other thin film transistors have the same structure as the thin film transistors shown in Fig. 1.
  • each thin film transistor includes: an active layer 201 disposed on the substrate 100; a source 202A and a drain 202B respectively disposed on both sides of the active layer 201; and an active layer 201, a source 202A, and a drain a first insulating layer 203 on 202B; a first gate 204A on the first insulating layer 203; a second insulating layer 205 on the first insulating layer 203 and the first gate 204A; on the second insulating layer 205 a second gate 204B; a third insulating layer 206 on the second insulating layer 205 and the second gate 204B; a source contact electrode 207A and a drain contact electrode 207B disposed on the third insulating layer 206, the source The contact electrode 207A and the drain contact electrode 207B are in contact with the source 202A and the drain 202B, respectively, after the first insulating layer 203, the second insulating layer 205, and the third insulating layer
  • the source contact electrode 207A and the drain contact electrode 207B serve as the electrode negative lines of the source 202A and the drain 202B, respectively, the source contact electrode 207A and the drain contact electrode 207B may also be referred to as a source and a drain, respectively. Or part of the source and drain, respectively.
  • the anode 300 and the first touch electrode structure 400 are spaced apart from each other on the second flat layer 208 such that the anode 300 and the first touch electrode structure 400 are insulated from each other.
  • the anode 300 is in contact with the drain contact electrode 207B after passing through the second planarization layer 208, thereby achieving connection of the anode 300 and the drain 202B; however, the invention is not limited thereto, for example, as another implementation of the present invention.
  • the mode anode 300 may also be in contact with the source contact electrode 207A after passing through the second planarization layer 208, thereby achieving connection of the anode 300 to the source 202A.
  • one anode 300 corresponds to one thin film transistor. When a plurality of thin film transistor arrays are arranged, the corresponding plurality of anodes 300 are also arranged in an array. For details, please refer to FIG. 2 .
  • the first planarization layer 500 is disposed on the first touch electrode structure 400, the anode 300, and the second planarization layer 208.
  • the first planarization layer 500 has a first via 510 that exposes the anode 300 (or a portion of the anode 300).
  • the second touch electrode structure 600 is disposed on the first flat layer 500.
  • the OLED device 700 is disposed on the exposed anode 300 (or a portion of the anode 300); the cathode 800 is disposed on the first planar layer 500 and spaced apart from the second touch electrode structure 600, and the cathode 800 fills the first via 510 to contact
  • the OLED device 700; the encapsulation layer 900 is disposed on the cathode 800 and the first planar layer 500.
  • one OLED device 700 is disposed on each anode 300, that is, a plurality of OLED devices 700 are also arrayed.
  • the cathodes 800 are strip-shaped and extend in the row direction, and each cathode 800 is located on the same row of OLED devices 700 and is in contact with the same row of OLED devices 700, as specifically described with reference to FIG.
  • FIG. 2 is a schematic view showing the arrangement of an anode and a first touch electrode structure in accordance with an embodiment of the present invention. It should be noted that in FIG. 3, in order to facilitate the spatial relationship between the anode and the first touch electrode structure, only the two are shown, and the remaining components are omitted.
  • the first touch electrode structure 400 includes a plurality of first sensing strings 410 , each of the first sensing strings 410 extending in a first direction (ie, a column direction or a Y direction) and the plurality of first sensing strings 410 are parallel to each other and Separating, each first sensing string 410 includes a plurality of first sensing pads 411 connected in series and a plurality of first bridge wires 412.
  • the first sensing pad 411 has a rectangular shape, but the present invention is not limited thereto.
  • the first sensing pad 411 may also be a mesh shape, a diamond shape, a triangle shape, a regular pentagon shape, and a regular hexagonal shape.
  • each of the first sensing strings 410 is disposed between the corresponding adjacent two columns of anodes 300, and the first sensing strings 410 are spaced apart from the corresponding adjacent two columns of anodes 300.
  • FIG. 3 is a schematic view showing the arrangement of an anode, a cathode, and a second touch electrode structure in accordance with an embodiment of the present invention. It should be noted that in FIG. 3, in order to facilitate the spatial relationship of the anode, cathode and second touch electrode structures, only three of them are shown, and the remaining components are omitted.
  • the second touch electrode structure 600 includes a plurality of second sensing strings 610 , each of the second sensing strings 610 extending in a second direction (ie, a row direction or an X direction) perpendicular to the first direction and a plurality of second sensing
  • the strings 610 are parallel and separated from each other, and each of the second sensing strings 610 includes a plurality of second sensing pads 611 connected in series and a plurality of second bridge wires 612.
  • the second sensing pad 611 has a rectangular shape, but the invention is not limited thereto.
  • the second sensing pad 611 may also be a mesh shape, a diamond shape, a triangle shape, a regular pentagon shape, and a regular hexagonal shape.
  • each second sensing string 610 is disposed between corresponding adjacent two rows of anodes 300, and the second sensing string 610 is spaced from the corresponding adjacent two rows of anodes 300.
  • the cathode 800 has a strip shape which extends in the row direction. Each cathode 800 is opposed to a corresponding row of anodes 300, but the invention is not limited thereto.
  • cathode 800 can be in the same shape as anode 300, multiple cathodes 800 are also arrayed, and one cathode 800 is opposite a corresponding one of anodes 300.
  • the first sensing string 410 may function as a transmitting electrode (ie, a Tx electrode), and the second sensing string 610 may serve as a receiving electrode (ie, an Rx electrode), but the present invention is not limited thereto.
  • FIG. 4 is a schematic diagram of a connection of a touch electrode structure and a bonding pad according to an embodiment of the invention.
  • FIG. 4 in order to facilitate the description of the positional relationship between the first touch electrode structure 400 and the second touch electrode structure 600, other components are omitted. It should be understood that the first touch electrode structure 400 and the second touch The electrode structures 600 are insulated from each other.
  • the touch display device further includes: a plurality of bonding pads 1000 and a plurality of traces 1010.
  • Each of the first sensing strings 410 is connected to a corresponding one of the bonding pads 1000 through a corresponding one of the wires 1010
  • each of the second sensing strings 610 is connected to a corresponding one of the bonding pads through a corresponding one of the wires 1010. 1000.
  • the plurality of bonding pads 1000 and the plurality of traces 1010 are generally formed in a bonding area (non-display area) of the substrate 100.
  • FIG. 5 is a flow chart of a method of fabricating a touch display device according to an embodiment of the invention.
  • a method for fabricating a touch display device includes:
  • Step S510 providing a substrate 100.
  • Step S520 forming a thin film transistor layer 200 including a thin film transistor on the substrate 100.
  • a thin film transistor layer 200 including a thin film transistor on the substrate 100.
  • Step S530 Forming an anode 300 on the thin film transistor layer 200 in contact with the source 202A or the drain 202B of the thin film transistor.
  • Step S540 forming a first touch electrode structure 400 that is spaced apart from and insulated from the anode 300 on the thin film transistor layer 200.
  • Step S550 forming a first flat layer 500 on the first touch electrode structure 400, the thin film transistor layer 200, and the anode 300.
  • Step S560 forming a second touch electrode structure 600 on the first flat layer 500.
  • Step S570 forming a first via hole 510 forming the exposed anode 300 in the first flat layer 500.
  • Step S580 forming an OLED device 700 on the anode 300.
  • Step S590 forming a cathode 800 spaced apart from and insulated from the second touch electrode structure 600 on the first planar layer 500, the cathode 800 filling the first via 510 to contact the OLED device 700.
  • Step S600 forming an encapsulation layer 900 on the cathode 800 and the first planar layer 500.
  • a method for fabricating a touch display device further includes: forming a plurality of bonding pads 1000 and a plurality of traces 1010 on the substrate 100;
  • the first sensing strings 410 are connected to the corresponding one of the bonding pads 1000 through a corresponding one of the wires 1010, and each of the second sensing strings 610 is connected to the corresponding one of the bonding pads 1000 through a corresponding one of the wires 1010.
  • FIG. 6 is a schematic cross-sectional view of a touch display device according to another embodiment of the present invention.
  • the touch display device of FIG. 1 is further characterized in that the touch display device according to another embodiment of the present invention further includes: an insulating protective layer 1020 disposed on the second touch electrode structure 600 . And on the first flat layer 500.
  • the insulating protective layer 1020 and the first planarization layer 500 have a second via 510' in which the anode 300 is exposed.
  • the cathode 800 is disposed on the insulating protective layer 1020, and the cathode 800 fills the second via 510' to contact the OLED device 700. That is, the insulating protective layer 1020 is disposed between the first flat layer 500 and the cathode 800 and covers the second touch electrode structure 600.
  • the cathode 800 in order to protect the second touch electrode structure 600 from communicating with the cathode 800, on the other hand, in order to form a flat surface, the cathode 800 can be fabricated.
  • the encapsulation layer 900 is disposed on the cathode 800 and the insulating protective layer 1020.
  • FIG. 7 is a flowchart of a method of fabricating a touch display device according to another embodiment of the present invention.
  • a method for fabricating a touch display device includes:
  • Step S710 providing a substrate 100.
  • Step S720 forming a thin film transistor layer 200 including a thin film transistor on the substrate 100.
  • a thin film transistor layer 200 including a thin film transistor on the substrate 100.
  • Step S730 forming an anode 300 on the thin film transistor layer 200 in contact with the source 202A or the drain 202B of the thin film transistor.
  • Step S740 forming a first touch electrode structure 400 that is spaced apart from and insulated from the anode 300 on the thin film transistor layer 200.
  • Step S750 forming a first flat layer 500 on the first touch electrode structure 400, the thin film transistor layer 200, and the anode 300.
  • Step S760 forming a second touch electrode structure 600 on the first flat layer 500.
  • Step S770 forming an insulating protective layer 1020 on the second touch electrode structure 600 and the first flat layer 500.
  • Step S780 A second via hole 510' forming the exposed anode 300 is formed in the insulating protective layer 1020 and the first flat layer 500.
  • Step S790 forming an OLED device 700 on the anode 300.
  • Step S800 forming a cathode 800 on the insulating protective layer 1020, the cathode 800 filling the second via 510' to contact the OLED device 700.
  • Step S810 forming an encapsulation layer 900 on the cathode 800 and the insulating protective layer 1020.
  • the touch electrode structure is embedded in the OLED display, and the in-cell touch OLED display is realized, and at the same time, since the distance between the OLED devices is relatively small, the High-precision touch production for in-cell touch OLED displays.

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Abstract

一种触控显示装置,其包括:基板(100);薄膜晶体管层(200),设置于基板(100)上,薄膜晶体管层(200)包括薄膜晶体管;阳极(300),设置在薄膜晶体管层(200)上且与薄膜晶体管的源极(202A)或漏极(202B)接触;第一触控电极结构(400),设置于薄膜晶体管层(200)上且与阳极(300)绝缘;第一平坦层(500),设置在第一触控电极结构(400)、薄膜晶体管层(200)和阳极(300)上,第一平坦层(500)中具有暴露阳极(300)的第一过孔(510);第二触控电极结构(600),设置于第一平坦层(500)上;OLED器件(700),设置在阳极(300)上;阴极(800),设置于第一平坦层(500)上且与第二触控电极结构(600)绝缘,阴极(800)填充第一过孔(510)以接触OLED器件(700);封装层(900),设置于阴极(800)和第一平坦层(900)上。将触控电极结构内嵌入到OLED显示器,实现了高触控精度和灵敏度的内嵌式触控OLED显示器。

Description

触控显示装置及其制作方法 技术领域
本发明属于触控显示技术领域,具体地讲,涉及一种触控显示装置及其制作方法。
背景技术
随着显示技术的快速发展,人们对显示器的要求越来越高,高分辨率、高炫彩性、响应速度更快等性能要求也促使显示技术向更高、更强、更快、更轻薄的方向发展。有机发光二极管(Organic Light Emitting Diode,OLED)作为显示解决方案的半导体元件技术也得到了飞速的发展。就现有显示技术来说,OLED显示具有自发光、响应速度快、宽视角、适应柔性基底,既可以应用在手机、电视、电脑等常规电器上,也可以用在虚拟现实(VR)装置、手表、可穿戴装置等异形,甚至可折叠、可卷曲等显示领域,广泛的应用领域,使其成为未来的主流显示技术之一。因此对OLED的技术研究和发展也成为各大面板制造公司竞争未来显示市场的核心。
当前,随着技术的发展,触控技术越来越依附于显示技术,成为显示装置产品的一个必不可少的附属功能。随着显示精度越来越高,对触控的技术要求也逐渐提升,触控的精度、灵敏度也会成为显示体验的重要因素。
发明内容
为了解决上述现有技术存在的问题,本发明的目的在于提供一种能够将触控技术嵌入到OLED显示器中以实现高触控精度和灵敏度的触控显示装置及其制作方法。
根据本发明的一方面,提供了一种触控显示装置,其包括:基板;薄膜晶体管层,设置于所述基板上,所述薄膜晶体管层包括薄膜晶体管;阳极,设置在所述薄膜晶体管层上且与所述薄膜晶体管的源极或漏极接触;第一触控电极结构,设置于所述薄膜晶体管层上且与所述阳极绝缘;第一平坦层,设置在所 述第一触控电极结构、所述薄膜晶体管层和所述阳极上,所述第一平坦层中具有暴露所述阳极的第一过孔;第二触控电极结构,设置于所述第一平坦层上;OLED器件,设置在所述阳极上;阴极,设置于所述第一平坦层上且与所述第二触控电极结构绝缘,所述阴极填充所述第一过孔以接触所述OLED器件;封装层,设置于所述阴极和所述第一平坦层上。
进一步地,所述触控显示装置还包括:绝缘保护层,设置在所述第一平坦层和所述阴极之间且覆盖所述第二触控电极结构。
进一步地,所述第一触控电极结构包括多个第一感测串,所述多个第一感测串彼此平行且分离且每个第一感测串沿第一方向延伸,每个第一感测串包括串接的多个第一感测垫以及多条第一桥接线。
进一步地,所述第二触控电极结构包括多个第二感测串,所述多个第二感测串彼此平行且分离且每个第二感测串沿与所述第一方向垂直的第二方向延伸,每个第二感测串包括串接的多个第二感测垫以及多条第二桥接线。
进一步地,所述第一感测垫和/或所述第二感测垫的形状呈矩形、网格状、菱形、三角形、正五边形、正六边形、正八变形中的一种。
进一步地,所述触控显示装置还包括多个绑定垫和多条走线,每个第一感测串通过对应的一条走线连接到对应的一个绑定垫,每个第二感测串通过对应的一条走线连接到对应的一个绑定垫。
根据本发明的另一方面,还提供了一种触控显示装置的制作方法,其包括:提供一基板;在所述基板上制作形成包括薄膜晶体管的薄膜晶体管层;在所述薄膜晶体管层上制作形成与薄膜晶体管的源极或漏极接触的阳极;在所述薄膜晶体管层上制作形成与所述阳极绝缘的第一触控电极结构;在所述第一触控电极结构、所述薄膜晶体管层和所述阳极上制作形成第一平坦层;在所述第一平坦层上制作形成第二触控电极结构;在所述第一平坦层中制作形成暴露所述阳极的第一过孔;在所述阳极上制作形成OLED器件;在所述第一平坦层上制作形成与所述第二触控电极结构绝缘的阴极,所述阴极填充所述第一过孔以接触所述OLED器件;在所述阴极和所述第一平坦层上制作形成封装层。
根据本发明的又一方面,又提供了一种触控显示装置的制作方法,其包括:提供一基板;在所述基板上制作形成包括薄膜晶体管的薄膜晶体管层;在所述薄膜晶体管层上制作形成与薄膜晶体管的源极或漏极接触的阳极;在所述薄膜晶体管层上制作形成与所述阳极绝缘的第一触控电极结构;在所述第一触控电极结构、所述薄膜晶体管层和所述阳极上制作形成第一平坦层;在所述第一平坦层上制作形成第二触控电极结构;在所述第一平坦层和所述第二触控电极结构上制作形成绝缘保护层;在所述第一平坦层和绝缘保护层中制作形成暴露所述阳极的第一过孔;在所述阳极上制作形成OLED器件;在所述绝缘保护层上制作形成阴极,所述阴极填充所述第一过孔以接触所述OLED器件;在所述阴极和所述绝缘保护层上制作形成封装层。
进一步地,所述触控显示装置的制作方法还包括:在基板上制作形成多个绑定垫和多条走线;其中,每个第一感测串通过对应的一条走线连接到对应的一个绑定垫,每个第二感测串通过对应的一条走线连接到对应的一个绑定垫。
本发明的有益效果:本发明将触控电极结构内嵌入到OLED显示器,实现了内嵌式触控OLED显示器,同时由于各OLED器件彼此之间的间隔距离相对较小,这样可以实现内嵌式触控OLED显示器的高精度触控制作。
附图说明
通过结合附图进行的以下描述,本发明的实施例的上述和其它方面、特点和优点将变得更加清楚,附图中:
图1是根据本发明的实施例的触控显示装置的截面示意图;
图2是根据本发明的实施例的阳极和第一触控电极结构的排布示意图;
图3是根据本发明的实施例的阳极、阴极和第二触控电极结构的排布示意图;
图4是根据本发明的实施例的触控电极结构与绑定垫的连接示意图;
图5是根据本发明的实施例的触控显示装置的制作方法的流程图;
图6是根据本发明的另一实施例的触控显示装置的截面示意图;
图7是根据本发明的另一实施例的触控显示装置的制作方法的流程图。
具体实施方式
以下,将参照附图来详细描述本发明的实施例。然而,可以以许多不同的形式来实施本发明,并且本发明不应该被解释为限制于这里阐述的具体实施例。相反,提供这些实施例是为了解释本发明的原理及其实际应用,从而使本领域的其他技术人员能够理解本发明的各种实施例和适合于特定预期应用的各种修改。
在附图中,相同的标号将始终被用于表示相同的元件。将理解的是,尽管在这里可使用术语“第一”、“第二”等来描述各种元件,但是这些元件不应受这些术语的限制。这些术语仅用于将一个元件与另一个元件区分开来。
将理解的是,当诸如层、膜、区域或基底等的元件被称作“在”另一元件“上”时,该元件可以直接在所述另一元件上,或者也可以存在中间元件。可选择地,当元件被称作“直接在”另一元件“上”时,不存在中间元件。
图1是根据本发明的实施例的触控显示装置的截面示意图。
参照图1,根据本发明的实施例的触控显示装置包括:基板100、薄膜晶体管层200、阳极300、第一触控电极结构400、第一平坦层500、第二触控电极结构600、OLED器件700、阴极800、封装层900。
基板100可例如是玻璃基板或者树脂基板。薄膜晶体管层200设置于基板100上,薄膜晶体管层200由阵列排布的多个薄膜晶体管构成。在图1中,仅示出了两个薄膜晶体管的结构,应当理解的是,其他薄膜晶体管与图1所示的薄膜晶体管的结构相同。
具体地,每个薄膜晶体管包括:设置于基板100上的有源层201;分别设置于有源层201两侧的源极202A和漏极202B;在有源层201、源极202A和漏极202B上的第一绝缘层203;在第一绝缘层203上的第一栅极204A;在第一绝缘层203和第一栅极204A上的第二绝缘层205;在第二绝缘层205上的第二栅极204B;在第二绝缘层205和第二栅极204B上的第三绝缘层206;设置在第三绝缘层206上的源极接触电极207A和漏极接触电极207B,源极接触 电极207A和漏极接触电极207B贯穿第一绝缘层203、第二绝缘层205和第三绝缘层206之后分别与源极202A和漏极202B接触;在源极接触电极207A、漏极接触电极207B和第三绝缘层206上的第二平坦层208。这里,由于源极接触电极207A和漏极接触电极207B分别作为源极202A和漏极202B的电极阴线,因此源极接触电极207A和漏极接触电极207B也可以被分别称作源极和漏极或者分别属于源极和漏极的一部分。
阳极300和第一触控电极结构400间隔设置在第二平坦层208上,这样阳极300和第一触控电极结构400彼此绝缘。在本实施例中,阳极300贯穿第二平坦层208之后与漏极接触电极207B接触,从而实现阳极300与漏极202B的连接;但是本发明并不限制于此,例如作为本发明的其他实施方式阳极300也可以贯穿第二平坦层208之后与源极接触电极207A接触,从而实现阳极300与源极202A的连接。此外,一个阳极300对应一个薄膜晶体管,那么当多个薄膜晶体管阵列排布时,相应的多个阳极300也阵列排布,具体请参照图2。
第一平坦层500设置在第一触控电极结构400、阳极300和第二平坦层208上。第一平坦层500具有暴露阳极300(或者阳极300的部分)的第一过孔510。
第二触控电极结构600设置于第一平坦层500上。OLED器件700设置在暴露的阳极300(或者阳极300的部分)上;阴极800设置于第一平坦层500上且与第二触控电极结构600间隔绝缘,阴极800填充第一过孔510以接触OLED器件700;封装层900设置于阴极800和第一平坦层500上。在本实施例中,每个阳极300上设置一个OLED器件700,即多个OLED器件700也阵列分布。然而,阴极800呈条形状,其沿行方向延伸,每个阴极800位于同一行的OLED器件700上且与同一行的OLED器件700接触,具体请参照图3。
图2是根据本发明的实施例的阳极和第一触控电极结构的排布示意图。应当说明的是,在图3中,为了便于图示阳极和第一触控电极结构的空间关系,仅示出了这两者,其余的元件被省略。
参照图2,多个阳极300阵列排布。第一触控电极结构400包括多个第一感测串410,每个第一感测串410沿第一方向(即列方向或Y方向)延伸并且多个第一感测串410彼此平行且分离,每个第一感测串410包括串接的多个第一感测垫411以及多条第一桥接线412。在本实施例中,第一感测垫411呈矩 形状,但本发明并不限制于此,例如第一感测垫411也可以是网格状、菱形、三角形、正五边形、正六边形、正八变形中的一种。
进一步地,每个第一感测串410设置于对应的相邻两列阳极300之间,并且第一感测串410与对应的相邻两列阳极300都具有间隔。
图3是根据本发明的实施例的阳极、阴极和第二触控电极结构的排布示意图。应当说明的是,在图3中,为了便于图示阳极、阴极和第二触控电极结构的空间关系,仅示出了这三者,其余的元件被省略。
参照图3,多个阳极300阵列排布。第二触控电极结构600包括多个第二感测串610,每个第二感测串610沿与第一方向垂直的第二方向(即行方向或X方向)延伸并且多个第二感测串610彼此平行且分离,每个第二感测串610包括串接的多个第二感测垫611以及多条第二桥接线612。在本实施例中,第二感测垫611呈矩形状,但本发明并不限制于此,例如第二感测垫611也可以是网格状、菱形、三角形、正五边形、正六边形、正八变形中的一种。
进一步地,每个第二感测串610设置于对应的相邻两行阳极300之间,并且第二感测串610与对应的相邻两行阳极300都具有间隔。
如上所述,阴极800呈条形状,其沿行方向延伸。每条阴极800与对应的一行阳极300相对,但本发明并不限制于此。例如,阴极800可以呈与阳极300相同的形状,多个阴极800也阵列排布,并且一个阴极800与对应的一个阳极300相对。
此外,当进行触控操作时,第一感测串410可以作为发射电极(即Tx电极),第二感测串610可以作为接收电极(即Rx电极),但本发明并不限制于此。
图4是根据本发明的实施例的触控电极结构与绑定垫的连接示意图。在图4中,为了便于图示第一触控电极结构400和第二触控电极结构600的位置关系,省略了其他元件,应当理解的是,第一触控电极结构400和第二触控电极结构600是彼此绝缘的。
参照图4,根据本发明的实施例的触控显示装置还包括:多个绑定垫1000 和多条走线1010。其中,每个第一感测串410通过对应的一条走线1010连接到对应的一个绑定垫1000,每个第二感测串610通过对应的一条走线1010连接到对应的一个绑定垫1000。应当说明的是,多个绑定垫1000和多条走线1010一般形成在基板100的绑定区(非显示区)。
图5是根据本发明的实施例的触控显示装置的制作方法的流程图。
参照图5,根据本发明的实施例的触控显示装置的制作方法包括:
步骤S510:提供一基板100。
步骤S520:在基板100上制作形成包括薄膜晶体管的薄膜晶体管层200。薄膜晶体管的具体结构请参照上述的描述。
步骤S530:在薄膜晶体管层200上制作形成与薄膜晶体管的源极202A或漏极202B接触的阳极300。
步骤S540:在薄膜晶体管层200上制作形成与阳极300间隔且绝缘的第一触控电极结构400。
步骤S550:在第一触控电极结构400、薄膜晶体管层200和阳极300上制作形成第一平坦层500。
步骤S560:在第一平坦层500上制作形成第二触控电极结构600。
步骤S570:在第一平坦层500中制作形成暴露阳极300的第一过孔510。
步骤S580:在阳极300上制作形成OLED器件700。
步骤S590:在第一平坦层500上制作形成与第二触控电极结构600间隔且绝缘的阴极800,所述阴极800填充第一过孔510以接触OLED器件700。
步骤S600:在阴极800和第一平坦层500上制作形成封装层900。
进一步地,作为本发明的其他实施方式,根据本发明的实施例的触控显示装置的制作方法还包括:在基板100上制作形成多个绑定垫1000和多条走线1010;其中,每个第一感测串410通过对应的一条走线1010连接到对应的一 个绑定垫1000,每个第二感测串610通过对应的一条走线1010连接到对应的一个绑定垫1000。
图6是根据本发明的另一实施例的触控显示装置的截面示意图。
参照图6,与图1所示的触控显示装置的不同之处在于:根据本发明的另一实施例的触控显示装置还包括:绝缘保护层1020,设置在第二触控电极结构600和第一平坦层500上。绝缘保护层1020和第一平坦层500中具有暴露阳极300的第二过孔510’。阴极800设置在绝缘保护层1020上,并且阴极800填充第二过孔510’以接触OLED器件700。也就是说,绝缘保护层1020设置在第一平坦层500和阴极800之间且覆盖第二触控电极结构600。如此,一方面是为了保护第二触控电极结构600不与阴极800的连通,另一方面是为了形成平坦的表面,便于阴极800的制作。封装层900设置在阴极800和绝缘保护层1020上。
图7是根据本发明的另一实施例的触控显示装置的制作方法的流程图。
参照图7,根据本发明的另一实施例的触控显示装置的制作方法包括:
步骤S710:提供一基板100。
步骤S720:在基板100上制作形成包括薄膜晶体管的薄膜晶体管层200。薄膜晶体管的具体结构请参照上述的描述。
步骤S730:在薄膜晶体管层200上制作形成与薄膜晶体管的源极202A或漏极202B接触的阳极300。
步骤S740:在薄膜晶体管层200上制作形成与阳极300间隔且绝缘的第一触控电极结构400。
步骤S750:在第一触控电极结构400、薄膜晶体管层200和阳极300上制作形成第一平坦层500。
步骤S760:在第一平坦层500上制作形成第二触控电极结构600。
步骤S770:在第二触控电极结构600和第一平坦层500上制作形成绝缘保 护层1020。
步骤S780:在绝缘保护层1020和第一平坦层500中制作形成暴露阳极300的第二过孔510’。
步骤S790:在阳极300上制作形成OLED器件700。
步骤S800:在绝缘保护层1020上制作形成阴极800,所述阴极800填充第二过孔510’以接触OLED器件700。
步骤S810:在阴极800和绝缘保护层1020上制作形成封装层900。
综上所述,根据本发明的实施例,将触控电极结构内嵌入到OLED显示器,实现了内嵌式触控OLED显示器,同时由于各OLED器件彼此之间的间隔距离相对较小,这样可以实现内嵌式触控OLED显示器的高精度触控制作。
虽然已经参照特定实施例示出并描述了本发明,但是本领域的技术人员将理解:在不脱离由权利要求及其等同物限定的本发明的精神和范围的情况下,可在此进行形式和细节上的各种变化。

Claims (16)

  1. 一种触控显示装置,其中,包括:
    基板;
    薄膜晶体管层,设置于所述基板上,所述薄膜晶体管层包括薄膜晶体管;
    阳极,设置在所述薄膜晶体管层上且与所述薄膜晶体管的源极或漏极接触;
    第一触控电极结构,设置于所述薄膜晶体管层上且与所述阳极绝缘;
    第一平坦层,设置在所述第一触控电极结构、所述薄膜晶体管层和所述阳极上,所述第一平坦层中具有暴露所述阳极的第一过孔;
    第二触控电极结构,设置于所述第一平坦层上;
    OLED器件,设置在所述阳极上;
    阴极,设置于所述第一平坦层上且与所述第二触控电极结构绝缘,所述阴极填充所述第一过孔以接触所述OLED器件;
    封装层,设置于所述阴极和所述第一平坦层上。
  2. 根据权利要求1所述的触控显示装置,其中,所述触控显示装置还包括:绝缘保护层,设置在所述第一平坦层和所述阴极之间且覆盖所述第二触控电极结构。
  3. 根据权利要求1所述的触控显示装置,其中,所述第一触控电极结构包括多个第一感测串,所述多个第一感测串彼此平行且分离且每个第一感测串沿第一方向延伸,每个第一感测串包括串接的多个第一感测垫以及多条第一桥接线。
  4. 根据权利要求2所述的触控显示装置,其中,所述第一触控电极结构包括多个第一感测串,所述多个第一感测串彼此平行且分离且每个第一感测串 沿第一方向延伸,每个第一感测串包括串接的多个第一感测垫以及多条第一桥接线。
  5. 根据权利要求3所述的触控显示装置,其中,所述第二触控电极结构包括多个第二感测串,所述多个第二感测串彼此平行且分离且每个第二感测串沿与所述第一方向垂直的第二方向延伸,每个第二感测串包括串接的多个第二感测垫以及多条第二桥接线。
  6. 根据权利要求4所述的触控显示装置,其中,所述第二触控电极结构包括多个第二感测串,所述多个第二感测串彼此平行且分离且每个第二感测串沿与所述第一方向垂直的第二方向延伸,每个第二感测串包括串接的多个第二感测垫以及多条第二桥接线。
  7. 根据权利要求5所述的触控显示装置,其中,所述第一感测垫和/或所述第二感测垫的形状呈矩形、网格状、菱形、三角形、正五边形、正六边形、正八变形中的一种。
  8. 根据权利要求6所述的触控显示装置,其中,所述第一感测垫和/或所述第二感测垫的形状呈矩形、网格状、菱形、三角形、正五边形、正六边形、正八变形中的一种。
  9. 根据权利要求5所述的触控显示装置,其中,所述触控显示装置还包括多个绑定垫和多条走线,每个第一感测串通过对应的一条走线连接到对应的一个绑定垫,每个第二感测串通过对应的一条走线连接到对应的一个绑定垫。
  10. 根据权利要求6所述的触控显示装置,其中,所述触控显示装置还包括多个绑定垫和多条走线,每个第一感测串通过对应的一条走线连接到对应的一个绑定垫,每个第二感测串通过对应的一条走线连接到对应的一个绑定垫。
  11. 一种触控显示装置的制作方法,其中,包括:
    提供一基板;
    在所述基板上制作形成包括薄膜晶体管的薄膜晶体管层;
    在所述薄膜晶体管层上制作形成与薄膜晶体管的源极或漏极接触的阳极;
    在所述薄膜晶体管层上制作形成与所述阳极绝缘的第一触控电极结构;
    在所述第一触控电极结构、所述薄膜晶体管层和所述阳极上制作形成第一平坦层;
    在所述第一平坦层上制作形成第二触控电极结构;
    在所述第一平坦层中制作形成暴露所述阳极的第一过孔;
    在所述阳极上制作形成OLED器件;
    在所述第一平坦层上制作形成与所述第二触控电极结构绝缘的阴极,所述阴极填充所述第一过孔以接触所述OLED器件;
    在所述阴极和所述第一平坦层上制作形成封装层。
  12. 根据权利要求11所述的触控显示装置的制作方法,其中,所述第一触控电极结构包括多个第一感测串,所述多个第一感测串彼此平行且分离且每个第一感测串沿第一方向延伸,每个第一感测串包括串接的多个第一感测垫以及多条第一桥接线;
    所述第二触控电极结构包括多个第二感测串,所述多个第二感测串彼此平行且分离且每个第二感测串沿与所述第一方向垂直的第二方向延伸,每个第二感测串包括串接的多个第二感测垫以及多条第二桥接线。
  13. 根据权利要求11所述的触控显示装置的制作方法,其中,所述触控显示装置的制作方法还包括:在基板上制作形成多个绑定垫和多条走线;其中,每个第一感测串通过对应的一条走线连接到对应的一个绑定垫,每个第二感测串通过对应的一条走线连接到对应的一个绑定垫。
  14. 一种触控显示装置的制作方法,其中,包括:
    提供一基板;
    在所述基板上制作形成包括薄膜晶体管的薄膜晶体管层;
    在所述薄膜晶体管层上制作形成与薄膜晶体管的源极或漏极接触的阳极;
    在所述薄膜晶体管层上制作形成与所述阳极绝缘的第一触控电极结构;
    在所述第一触控电极结构、所述薄膜晶体管层和所述阳极上制作形成第一平坦层;
    在所述第一平坦层上制作形成第二触控电极结构;
    在所述第一平坦层和所述第二触控电极结构上制作形成绝缘保护层;
    在所述第一平坦层和绝缘保护层中制作形成暴露所述阳极的第一过孔;
    在所述阳极上制作形成OLED器件;
    在所述绝缘保护层上制作形成阴极,所述阴极填充所述第一过孔以接触所述OLED器件;
    在所述阴极和所述绝缘保护层上制作形成封装层。
  15. 根据权利要求14所述的触控显示装置的制作方法,其中,所述第一触控电极结构包括多个第一感测串,所述多个第一感测串彼此平行且分离且每个第一感测串沿第一方向延伸,每个第一感测串包括串接的多个第一感测垫以及多条第一桥接线;
    所述第二触控电极结构包括多个第二感测串,所述多个第二感测串彼此平行且分离且每个第二感测串沿与所述第一方向垂直的第二方向延伸,每个第二感测串包括串接的多个第二感测垫以及多条第二桥接线。
  16. 根据权利要求14所述的触控显示装置的制作方法,其中,所述触控显示装置的制作方法还包括:在基板上制作形成多个绑定垫和多条走线;其中,每个第一感测串通过对应的一条走线连接到对应的一个绑定垫,每个第二感测串通过对应的一条走线连接到对应的一个绑定垫。
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Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109377877A (zh) * 2018-09-26 2019-02-22 武汉华星光电半导体显示技术有限公司 显示模组及电子装置
CN109871158A (zh) * 2019-02-21 2019-06-11 芯颖科技有限公司 显示屏
CN110391282B (zh) * 2019-07-30 2021-08-24 北京小米移动软件有限公司 显示面板、电子设备和显示面板的制造方法
CN110571243A (zh) * 2019-08-13 2019-12-13 武汉华星光电半导体显示技术有限公司 显示面板
CN111755486A (zh) * 2020-06-16 2020-10-09 武汉华星光电半导体显示技术有限公司 一种触控屏及电子装置
CN112582381B (zh) * 2020-12-10 2023-09-26 武汉华星光电半导体显示技术有限公司 触控显示面板及其制备方法
CN113064505A (zh) * 2021-03-01 2021-07-02 武汉华星光电半导体显示技术有限公司 触控显示面板及触控显示装置
CN113193011A (zh) * 2021-04-09 2021-07-30 深圳市华星光电半导体显示技术有限公司 显示面板及其制备方法、显示模组
CN115942832B (zh) * 2022-12-29 2024-03-01 惠科股份有限公司 Oled显示面板和显示装置

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20140039470A (ko) * 2012-09-24 2014-04-02 엘지디스플레이 주식회사 터치 타입 유기발광다이오드 표시장치
CN103984442A (zh) * 2014-05-27 2014-08-13 上海和辉光电有限公司 内嵌式有源矩阵有机发光二极管触控面板
CN106206666A (zh) * 2016-08-29 2016-12-07 上海天马微电子有限公司 有机发光显示面板和有机发光显示装置
CN107104131A (zh) * 2017-05-27 2017-08-29 武汉天马微电子有限公司 一种触控显示面板及显示装置
CN107272958A (zh) * 2017-06-28 2017-10-20 武汉华星光电半导体显示技术有限公司 一种内嵌式触控oled显示装置及其制作方法
CN107526468A (zh) * 2017-08-21 2017-12-29 武汉华星光电半导体显示技术有限公司 显示屏及其制备方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103207721B (zh) * 2013-04-03 2016-02-03 友达光电(苏州)有限公司 触控单元阵列及包含其的触控面板
KR102100260B1 (ko) * 2013-09-11 2020-04-13 엘지디스플레이 주식회사 고저항성 봉지재와 유기 발광 다이오드 장치 및 이들의 제조 방법
CN104793804B (zh) * 2015-05-12 2017-12-15 京东方科技集团股份有限公司 触控基板、显示设备及其制造方法和驱动方法

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20140039470A (ko) * 2012-09-24 2014-04-02 엘지디스플레이 주식회사 터치 타입 유기발광다이오드 표시장치
CN103984442A (zh) * 2014-05-27 2014-08-13 上海和辉光电有限公司 内嵌式有源矩阵有机发光二极管触控面板
CN106206666A (zh) * 2016-08-29 2016-12-07 上海天马微电子有限公司 有机发光显示面板和有机发光显示装置
CN107104131A (zh) * 2017-05-27 2017-08-29 武汉天马微电子有限公司 一种触控显示面板及显示装置
CN107272958A (zh) * 2017-06-28 2017-10-20 武汉华星光电半导体显示技术有限公司 一种内嵌式触控oled显示装置及其制作方法
CN107526468A (zh) * 2017-08-21 2017-12-29 武汉华星光电半导体显示技术有限公司 显示屏及其制备方法

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