WO2019111736A1 - Dispositif optique, dispositif de mesure, système de jonction et procédé de mesure - Google Patents

Dispositif optique, dispositif de mesure, système de jonction et procédé de mesure Download PDF

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Publication number
WO2019111736A1
WO2019111736A1 PCT/JP2018/043308 JP2018043308W WO2019111736A1 WO 2019111736 A1 WO2019111736 A1 WO 2019111736A1 JP 2018043308 W JP2018043308 W JP 2018043308W WO 2019111736 A1 WO2019111736 A1 WO 2019111736A1
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WIPO (PCT)
Prior art keywords
substrate
light
filter
light source
optical device
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Application number
PCT/JP2018/043308
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English (en)
Japanese (ja)
Inventor
慶崇 大塚
茂登 鶴田
Original Assignee
東京エレクトロン株式会社
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Priority to JP2019558134A priority Critical patent/JPWO2019111736A1/ja
Publication of WO2019111736A1 publication Critical patent/WO2019111736A1/fr

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/956—Inspecting patterns on the surface of objects
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/20—Filters
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof

Definitions

  • Embodiments disclosed herein relate to an optical device, a measuring device, a bonding system, and a measuring method.
  • measurement using an optical device may be performed on a substrate such as a semiconductor wafer or a glass substrate.
  • Patent Document 1 discloses an inspection apparatus for imaging the inside of a superposed substrate formed by bonding substrates with an infrared camera and inspecting the inside of the superposed substrate based on the imaged image. ing.
  • the inspection apparatus includes an optical device having a light source such as a halogen light bulb and a filter for transmitting infrared light among the light emitted from the light source, and the reflected infrared light emitted from the optical device is used as an infrared camera.
  • Image Since the infrared light passes through the substrate, a part of the infrared light irradiated to the polymerizing substrate is transmitted, and the remaining part is hit against the internal structure of the polymerizing substrate and reflected to obtain an image of the inside of the polymerizing substrate.
  • the ratio of light reflected on the surface of the polymerizing substrate to the infrared light irradiated to the polymerizing substrate is larger than that to reach the structure inside the polymerizing substrate, the obtained image becomes unclear, and then It may be difficult to accurately measure the Such problems may occur similarly when measuring a substrate other than a polymerized substrate or when measuring a substrate using light other than infrared light.
  • An aspect of the embodiment aims to provide an optical device, a measuring device, a bonding system, and a measuring method that can improve the measurement accuracy of a substrate.
  • An optical device includes a light source, a filter, a cooling mechanism, and a control unit.
  • the filter transmits light in a partial wavelength range of light emitted from the light source.
  • the cooling mechanism cools the filter.
  • the controller controls the cooling mechanism to adjust the wavelength range of light transmitted by the filter.
  • the measurement accuracy of the substrate can be improved.
  • FIG. 1 is a view showing the arrangement of a measurement apparatus according to the first embodiment.
  • FIG. 2 is a diagram showing the path of infrared light.
  • FIG. 3 is a schematic cross-sectional view of the filter unit as viewed from the side.
  • FIG. 4 is a schematic cross-sectional view of the filter unit as viewed from the front.
  • FIG. 5 is a graph showing the relationship between the temperature of the filter and the wavelength range of light transmitted by the filter.
  • FIG. 6 is a flowchart showing the procedure of processing executed by the measuring device according to the first embodiment.
  • FIG. 7 is a plan view showing the configuration of the bonding system according to the second embodiment.
  • FIG. 8 is a schematic plan view showing the configuration of the bonding apparatus.
  • FIG. 9 is a schematic side view showing the configuration of the bonding apparatus.
  • FIG. 10 is a flowchart showing the process performed by the bonding system.
  • FIG. 11 is a view showing the configuration of a measuring apparatus according to another embodiment.
  • FIG. 1 is a view showing the arrangement of a measurement apparatus according to the first embodiment.
  • FIG. 2 is a diagram showing the path of infrared light.
  • the X-axis direction, the Y-axis direction, and the Z-axis direction orthogonal to one another are defined, and the Z-axis positive direction is the vertically upward direction.
  • the measuring apparatus 1 captures the pattern present inside the overlapping substrate T, for example, the amount of deviation between the first substrate W1 and the second substrate W2 in the overlapping substrate T. Measure
  • the superposed substrate T is formed by bonding the first substrate W1 and the second substrate W2.
  • the first substrate W1 and the second substrate W2 are silicon wafers, and a plurality of electronic circuits are formed on the plate surface.
  • the measuring apparatus 1 is imaged by the optical device 2 that irradiates light to the overlapping substrate T that is the target substrate, the imaging device 3 that images reflected light from the overlapping substrate T, and the imaging device 3
  • the control device 4 is configured to measure the amount of displacement between the first substrate W1 and the second substrate W2 in the overlapping substrate T based on the image.
  • the optical device 2 includes a light generation unit 21 that generates light, a lens barrel 22 that houses various optical systems, and an objective lens 23 attached to the lens barrel 22.
  • the light generation unit 21 includes a housing 21 a, a light source 21 b, a filter unit 21 c, and a light guide unit 21 d.
  • the housing 21a is a container that accommodates the light source 21b and the filter unit 21c.
  • the light source 21 b is, for example, a halogen bulb.
  • the halogen bulb generates light in a wavelength range of 400 nm to 6000 nm. Further, the halogen bulb heats the filter portion 21c disposed inside the casing 21a by generating heat by light emission.
  • the light source 21 b is not limited to a halogen bulb.
  • the light source 21b generates light including at least a part of the infrared region (740 nm or more and 1000 ⁇ m or less), and generates heat at a temperature of at least 100 ° C. or more by light emission. It may be a light source.
  • the light source 21b may be a xenon lamp.
  • the filter unit 21 c is configured to include a filter that transmits only light in a partial wavelength range among the light emitted from the light source 21 b and blocks light in the remaining wavelength range.
  • the configuration of the filter unit 21c will be described later.
  • the light guide 21 d is, for example, an optical fiber, and guides the light transmitted through the filter 21 c to the inside of the lens barrel 22.
  • the lens barrel 22 includes a cylindrical portion 22a, a reflecting mirror 22b, and a half mirror 22c.
  • An objective lens 23 to be described later is attached to one end of the cylindrical portion 22a near the overlapping substrate T, and an imaging device 3 to be described later is attached to the other end far from the overlapping substrate T.
  • the reflecting mirror 22b and the half mirror 22c are disposed inside the cylindrical portion 22a.
  • the reflecting mirror 22b changes the course of the light, which has entered vertically downward from the light guide 21d, to the horizontal direction and causes the light to enter the half mirror 22c.
  • the half mirror 22 c reflects the light incident from the reflecting mirror 22 b toward the polymerizing substrate T, and transmits the light incident from the polymerizing substrate T.
  • the lens barrel 22 does not necessarily have to include the reflecting mirror 22b, and the light from the light guide 21d may be directly incident on the half mirror 22c without passing through the reflecting mirror 22b.
  • the objective lens 23 produces an image of the superposed substrate T.
  • light emitted from the light source 21b enters the filter unit 21c, and the filter unit 21c removes wavelength components other than the infrared region such as the visible region.
  • light transmitted through the filter portion 21c (hereinafter, referred to as infrared light) is guided into the cylindrical portion 22a by the light guide portion 21d, and the polymer substrate is obtained via the reflecting mirror 22b, the half mirror 22c and the objective lens 23.
  • infrared light Incident vertically to T.
  • the infrared light reflected from the superposed substrate T passes through the objective lens 23 and enters the cylindrical portion 22 a, passes through the half mirror 22 c, and The light is incident on the imaging device 31.
  • the imaging device 3 is, for example, a CCD (Charge Coupled Device) camera, and includes an imaging element 31.
  • the imaging device 31 is an infrared imaging device and has a sensitivity region in the infrared region.
  • the image captured by the imaging device 3 is input to the control device 4.
  • Infrared light has the property of transmitting through a silicon wafer.
  • the pattern P formed inside the superposed substrate T is formed of a material other than silicon, such as metal, when it hits the pattern P, the infrared light is reflected without being transmitted. Therefore, as shown in FIG. 2, in the infrared light L1 incident on the polymerization substrate T, the infrared light L3 which enters the inside of the polymerization substrate T and in which the pattern P does not exist on the route is the polymerization substrate as it is The infrared light L4 which transmits T, penetrates the inside of the superposed substrate T, and has the pattern P on the path strikes the pattern P and is reflected and enters the imaging device 31 of the imaging device 3.
  • the infrared light L1 is described as the incident light L1, the infrared light L3 as the transmitted light L3, and the infrared light L4 as the internally reflected light L4.
  • the incident light L1 enters the inside of the polymerization substrate T, and infrared light (hereinafter referred to as surface reflection light L2) reflected on the surface of the polymerization substrate T may be generated.
  • surface reflection light L2 infrared light
  • the image obtained by the imaging device 3 becomes unclear, that is, the visibility of the pattern P decreases, and the accuracy of the subsequent measurement may decrease. is there. Therefore, in order to measure the polymerization substrate T with high accuracy, the proportion of the surface reflected light L2 in the incident light L1 may be reduced, in other words, the light entering the inside of the polymerization substrate T of the incident light L1 (transmission It is desirable to increase the ratio of light L3 + internally reflected light L4).
  • the wavelength range of the incident light L1 in which the ratio of the light (transmitted light L3 + internally reflected light L4) entering the inside of the superposed substrate T is the highest varies depending on the type of the superposed substrate T. For this reason, it is conceivable to replace the filter according to the type of the polymer substrate T, but it takes time and labor to replace it, and since it is necessary to prepare multiple types of filters, it also costs a lot. Not desirable.
  • the wavelength range of light to be transmitted changes with temperature. Therefore, in the measurement apparatus 1 according to the first embodiment, the wavelength range of light transmitted through the filter is adjusted by adjusting the temperature of the filter. As a result, it is possible to create incident light L1 in a wavelength range in which the proportion of light entering the inside of the overlapping substrate T increases without changing the hardware configuration.
  • FIG. 3 is a schematic cross-sectional view of the filter portion 21c viewed from the side.
  • FIG. 4 is a schematic cross-sectional view of the filter portion 21c as viewed from the front.
  • the filter unit 21 c includes a filter 201, a cooling mechanism 202 that cools the filter 201, and a temperature sensor 203 that detects the temperature of the filter 201.
  • the filter 201 is formed of the same material as the material of the overlapping substrate T which is the target substrate. That is, the filter 201 according to the first embodiment is formed of silicon.
  • the filter 201 has the property that the wavelength range of light to be transmitted changes with temperature.
  • FIG. 5 is a graph showing the relationship between the temperature of the filter 201 and the wavelength range of light transmitted by the filter 201. As shown in FIG. 5, it can be seen that the wavelength range of light transmitted through the filter 201 formed of silicon shifts to the long wavelength side as the temperature of the filter 201 becomes higher.
  • the cooling mechanism 202 includes a main body portion 221, a chiller 222, and a connection portion 223.
  • the main body portion 221 is a ring-shaped member having at the center an opening 221a for passing light emitted from a light source, and is formed of a metal such as aluminum or copper having a relatively high thermal conductivity.
  • the main body portion 221 is attached to the surface of the filter 201 on the light source 21 b side. Further, in the inside of the main body portion 221, a flow path 221b for circulating the cooling fluid is formed so as to go around the opening 221a.
  • the chiller 222 includes a circulation unit 222a and a temperature control unit 222b.
  • the circulation unit 222 a circulates the cooling water as the cooling fluid in the flow path 221 b in the main body unit 221. Specifically, the circulation portion 222a is connected to one end of the flow path 221b via the first connection portion 223a of the connection portion 223, and at the same time, the circulation portion 222a is connected to the flow path 221b via the second connection portion 223b of the connection portion 223. It is connected to the other end.
  • the circulation unit 222a supplies the cooling water to one end of the flow passage 221b via the first connection portion 223a. Further, the circulation unit 222a recovers the cooling water from the other end of the flow passage 221b through the second connection portion 223b, and supplies the cooling water again to one end of the flow passage 221b through the first connection portion 223a.
  • the temperature control unit 222b controls the temperature of the cooling water circulated by the circulation unit 222a.
  • the temperature control unit 222 b is controlled by a control unit 4 a of the control device 4 described later.
  • the cooling mechanism 202 is configured as described above, and cools the filter 201 in contact with the main body portion 221 by cooling the main body portion 221 using the cooling water circulating through the flow path 221b.
  • the circulation unit 222a and the connection unit 223 correspond to an example of a supply unit that supplies the cooling fluid to the flow path 221b.
  • a supply unit that supplies the cooling fluid to the flow path 221b.
  • liquid other than water may be sufficient as a cooling fluid.
  • the cooling fluid may be a gas.
  • the temperature sensor 203 is attached, for example, to the surface of the filter 201 opposite to the surface to which the body portion 221 is attached.
  • the temperature detected by the temperature sensor 203 is output to a control unit 4 a of the control device 4 described later.
  • the control device 4 includes a control unit 4a and a storage unit 4b.
  • the control unit 4a includes a microcomputer including a central processing unit (CPU), a read only memory (ROM), a random access memory (RAM), an input / output port, and various circuits.
  • the CPU of the microcomputer realizes the control described later by reading and executing the program stored in the ROM.
  • the program may be recorded in a computer-readable recording medium, and may be installed in the storage unit 4 b of the control device 4 from the recording medium.
  • Examples of the computer readable recording medium include a hard disk (HD), a flexible disk (FD), a compact disk (CD), a magnet optical disk (MO), and a memory card.
  • the storage unit 4 b is realized by, for example, a semiconductor memory device such as a RAM or a flash memory, or a storage device such as a hard disk or an optical disk.
  • the storage unit 4 b stores, for example, a set value of a wavelength range of light transmitted through the filter 201. Such setting values can be arbitrarily changed by the user.
  • the control unit 4a determines the target temperature of the filter 201 based on the setting value of the wavelength range stored in the storage unit 4b. For example, the control unit 4a can determine the target temperature of the filter 201 from the set value of the wavelength band using an arithmetic expression or a table representing the relationship between the temperature of the filter 201 and the wavelength band of light transmitted by the filter 201. .
  • the control unit 4a controls the temperature control unit 222b of the chiller 222 so that the temperature of the filter 201 becomes the target temperature. For example, when the temperature of the filter 201 detected by the temperature sensor 203 exceeds the target temperature, the control unit 4a controls the temperature control unit 222b to lower the temperature of the cooling water. On the other hand, when the temperature of the filter 201 detected by the temperature sensor 203 is lower than the target temperature, the control unit 4a controls the temperature control unit 222b to raise the temperature of the cooling water.
  • control unit 4a can adjust the cooling temperature of the filter 201 by controlling the temperature adjustment unit 222b, thereby adjusting the wavelength range of the light to be transmitted by the filter 201.
  • the control unit 4a can be obtained by the above-described equation or table in consideration of the difference between the temperature of the filter 201 detected by the temperature sensor 203 and the temperature of the central portion of the filter 201 to which the light from the light source 21b hits. A temperature lower than the target temperature may be determined as the target temperature of the filter 201.
  • FIG. 6 is a flowchart showing the procedure of processing performed by the measuring device 1 according to the first embodiment.
  • a temperature adjustment process is performed (step S101).
  • the control unit 4a controls the temperature adjustment unit 222b based on the detection result of the temperature sensor 203 so that the temperature of the filter 201 becomes the target temperature. Thereby, the wavelength range of the light which transmits the filter 201 is adjusted.
  • the temperature adjustment process may be continuously performed in the subsequent imaging process (step S102) and the measurement process (step S103).
  • an imaging process is performed (step S102).
  • the imaging device 3 captures reflected light from the overlapping substrate T, which is a target substrate, and outputs the captured image to the control unit 4a.
  • the measurement process is performed in the measuring device 1 (step S103).
  • the control unit 4a measures the amount of deviation between the first substrate W1 and the second substrate W2 based on the image captured by the imaging device 3.
  • step S103 the measuring apparatus 1 ends the process for one polymerized substrate T.
  • the measurement apparatus 1 includes the optical device 2, the imaging device 3, and the control unit 4a.
  • the optical device 2 applies light to the polymerized substrate T (an example of the target substrate).
  • the imaging device 3 captures the reflected light from the overlapping substrate T.
  • the control unit 4 a measures the superposed substrate T based on the image captured by the imaging device 3.
  • the optical device 2 further includes a light source 21 b, a filter 201 that transmits light in a partial wavelength range of light emitted from the light source 21 b, and a cooling mechanism 202 that cools the filter 201. Further, the control unit 4 a controls the cooling mechanism 202 to adjust the wavelength range of the light transmitted by the filter 201.
  • the incident light L1 in the wavelength range where the proportion of light entering the inside of the polymerization substrate T increases can be irradiated to the polymerization substrate T, so the proportion of the surface reflection light L2 increases.
  • the image captured by the imaging device 3 it is possible to prevent the image captured by the imaging device 3 from being unclear. Therefore, according to the measuring apparatus 1 which concerns on 1st Embodiment, the measurement precision of the superposition
  • the measuring apparatus 1 since the wavelength range of the light transmitted by the filter 201 is adjusted by adjusting the temperature of the filter 201, the polymerization is performed without changing the hardware configuration. It is possible to create incident light L1 in a wavelength range in which the proportion of light entering the interior of the substrate T increases.
  • the filter 201 is disposed at the position heated by the light source 21b, specifically, inside the housing 21a, the heat generated from the light source 21b is used.
  • the filter 201 can then be heated. Therefore, it is not necessary to separately provide a heating mechanism for heating the filter 201. Further, the temperature control of the filter 201 is easy as compared with the case where the heating mechanism is separately provided.
  • FIG. 7 is a plan view showing the configuration of the bonding system 100 according to the second embodiment.
  • the bonding system 100 for bonding the first substrate W1 and the second substrate W2 semi-permanently using an intermolecular force is described as an example, but the method for bonding the substrates is an intermolecular force.
  • a method of bonding the substrates with an adhesive may be used.
  • the same parts as the parts already described will be denoted by the same reference numerals as the parts already described, and redundant description will be omitted.
  • the bonding system 100 shown in FIG. 7 forms a superposed substrate T by bonding the first substrate W1 and the second substrate W2.
  • the bonding system 100 includes a loading / unloading station 200 and a processing station 300.
  • the loading / unloading station 200 and the processing station 300 are arranged in the order of the loading / unloading station 200 and the processing station 300 along the X-axis positive direction.
  • the loading / unloading station 200 includes a mounting table 101 and a transfer area 102.
  • the mounting table 101 includes a plurality of mounting plates 111.
  • cassettes C1, C2, and C3 for storing a plurality of (for example, 25) substrates in a horizontal state are mounted.
  • the cassette C1 is a cassette for accommodating the first substrate W1
  • the cassette C2 is a cassette for accommodating the second substrate W2
  • the cassette C3 is a cassette for accommodating the polymerization substrate T.
  • the transport region 102 is disposed adjacent to the X-axis positive direction side of the mounting table 101.
  • a transport path 121 extending in the Y-axis direction and a transport device 122 movable along the transport path 121 are provided.
  • the transport device 122 is movable not only in the Y-axis direction but also in the X-axis direction and is pivotable about the Z-axis, and the cassettes C1 to C3 mounted on the mounting plate 111 and the processing station 300 described later.
  • the first substrate W1, the second substrate W2, and the overlapping substrate T are transported with the third processing block G3.
  • the processing station 300 is provided with a plurality of processing blocks G1, G2, G3 provided with various devices.
  • the surface modification device 30 is disposed in the first processing block G1.
  • the surface modification apparatus 30 performs processing to modify the bonding surface of the first substrate W1 to the second substrate W2 and the bonding surface of the second substrate W2 to the first substrate W1.
  • the surface modification device 30 breaks the bond of SiO 2 on the bonding surface of the first substrate W 1 and the second substrate W 2 to form a single bond SiO, so as to facilitate subsequent hydrophilization. Improve the bonding surface.
  • oxygen gas or nitrogen gas which is a processing gas is excited and plasmatized and ionized in a reduced pressure atmosphere. Then, the bonding surface of the first substrate W1 and the second substrate W2 is irradiated with such oxygen ions or nitrogen ions to the bonding surface of the first substrate W1 and the second substrate W2, so that the bonding surface of the first substrate W1 and the second substrate W2 is plasma-processed and reformed. .
  • the surface hydrophilization device 40 and the bonding device 41 are disposed in the second processing block G2.
  • the surface hydrophilization device 40 hydrophilizes and cleans the bonding surface of the first substrate W1 and the second substrate W2 with, for example, pure water.
  • pure water is supplied onto the first substrate W1 or the second substrate W2 while rotating the first substrate W1 or the second substrate W2 held by the spin chuck. Thereby, the pure water supplied onto the first substrate W1 or the second substrate W2 diffuses on the bonding surface of the first substrate W1 or the second substrate W2, and the bonding surface of the first substrate W1 or the second substrate W2 It is hydrophilized.
  • the bonding device 41 bonds the hydrophilized first substrate W1 and the second substrate W2 by an intermolecular force.
  • the configuration of the bonding device 41 will be described later.
  • Transition devices for the first substrate W1, the second substrate W2 and the overlapping substrate T are provided in multiple stages in the third processing block G3.
  • the measuring device 1 described above is disposed, for example, at the top of the third processing block G3.
  • the measuring device 1 may be arrange
  • a transport area 60 is formed in the area surrounded by the first processing block G1, the second processing block G2, and the third processing block G3.
  • a transfer device 61 is disposed in the transfer area 60.
  • the transfer device 61 has, for example, a transfer arm which is movable in the vertical direction, the horizontal direction, and around the vertical axis.
  • the transfer device 61 moves in the transfer area 60, and the first processing block G1, the second processing block G2 and the third processing block G3 adjacent to the transfer area 60 are moved to the first substrate W1, the second processing block G1.
  • the substrate W2 and the superposed substrate T are transported.
  • FIG. 8 is a schematic plan view showing the configuration of the bonding apparatus 41.
  • FIG. 9 is a schematic side view showing the configuration of the bonding device 41. As shown in FIG.
  • the bonding apparatus 41 has a processing container 400 capable of sealing the inside.
  • a loading / unloading port 401 of the first substrate W1, the second substrate W2, and the superposed substrate T is formed on the side surface of the processing container 400 on the side of the transport region 60, and the loading / unloading port 401 is provided with an opening / closing shutter 402.
  • the inside of the processing container 400 is divided by the inner wall 403 into a transport region T1 and a processing region T2.
  • the loading / unloading port 401 described above is formed on the side surface of the processing container 400 in the transport region T1.
  • the loading / unloading port 404 of the first substrate W1, the second substrate W2, and the overlapping substrate T is also formed on the inner wall 403.
  • the transition 410, the wafer transfer mechanism 411, the reversing mechanism 430, and the position adjusting mechanism 420 are arranged in this order from the side of the loading / unloading port 401, for example.
  • the transition 410 temporarily mounts the first substrate W1, the second substrate W2, and the overlapping substrate T.
  • the transition 410 is formed in, for example, two stages, and any two of the first substrate W1, the second substrate W2, and the overlapping substrate T can be placed at the same time.
  • the wafer transfer mechanism 411 has a transfer arm movable, for example, in the vertical direction (Z-axis direction), the horizontal direction (Y-axis direction, X-axis direction) and the vertical axis.
  • the wafer transfer mechanism 411 can transfer the first substrate W1, the second substrate W2, and the overlapping substrate T in the transfer region T1 or between the transfer region T1 and the processing region T2.
  • the position adjustment mechanism 420 adjusts the horizontal direction of the first substrate W1 and the second substrate W2.
  • the position adjustment mechanism 420 includes a base 421 having a holding portion (not shown) for holding and rotating the first substrate W1 and the second substrate W2, and a notch portion of the first substrate W1 and the second substrate W2 And a detection unit 422 that detects the position of the The position adjustment mechanism 420 detects the positions of the notches of the first substrate W1 and the second substrate W2 using the detection unit 422 while rotating the first substrate W1 and the second substrate W2 held by the base 421. Adjust the position of the notch. Thereby, the horizontal direction of the first substrate W1 and the second substrate W2 is adjusted.
  • the reversing mechanism 430 reverses the front and back surfaces of the first substrate W1.
  • the reversing mechanism 430 has a holding arm 431 for holding the first substrate W1.
  • the holding arm 431 extends in the horizontal direction (X-axis direction).
  • the holding arm 431 is provided with, for example, four holding members 432 for holding the first substrate W1.
  • the holding arm 431 is supported by a drive unit 433 including, for example, a motor.
  • the holding arm 431 is pivotable about the horizontal axis by the drive unit 433.
  • the holding arm 431 is rotatable about the drive portion 433 and movable in the horizontal direction (X-axis direction).
  • another drive unit including, for example, a motor or the like is provided below the drive unit 433.
  • the drive unit 433 can move in the vertical direction along the support column 434 extending in the vertical direction.
  • the first substrate W1 held by the holding member 432 can be rotated about the horizontal axis by the driving unit 433 and can be moved in the vertical direction and the horizontal direction. Further, the first substrate W1 held by the holding member 432 can be rotated about the driving portion 433 to move between the position adjusting mechanism 420 and the upper chuck 440 described later.
  • an upper chuck 440 for attracting and holding the upper surface (bonding surface) of the first substrate W1 from above, and the second substrate W2 placed on the lower surface (non-bonding surface) of the second substrate W2 from below
  • a lower chuck 441 is provided to hold by suction.
  • the lower chuck 441 is provided below the upper chuck 440 and configured to be able to be disposed opposite to the upper chuck 440.
  • the upper chuck 440 is held by an upper chuck holding portion 450 provided above the upper chuck 440.
  • the upper chuck holding portion 450 is supported by a plurality of support portions 452 provided on the ceiling surface of the processing container 400.
  • the upper chuck 440 is fixed to the processing container 400 via the upper chuck holder 450.
  • a striker 490 is disposed on the upper surface of the upper chuck holding portion 450.
  • the striker 490 includes a pressing pin 491, an actuator portion 492, and a linear motion mechanism 493.
  • the pressing pin 491 is a cylindrical member extending along the vertical direction, and is supported by the actuator unit 492.
  • the actuator unit 492 generates a constant pressure in a fixed direction (here, vertically below) by, for example, air supplied from an electropneumatic regulator (not shown).
  • the actuator portion 492 can control the pressing load applied to the central portion of the first substrate W1 by being in contact with the central portion of the first substrate W1 by the air supplied from the electropneumatic regulator. Further, the tip of the actuator portion 492 is vertically movable by air from the electropneumatic regulator.
  • the actuator unit 492 is supported by the linear motion mechanism 493.
  • the linear movement mechanism 493 moves the actuator unit 492 in the vertical direction, for example, by a drive unit including a motor.
  • the striker 490 is configured as described above, controls the movement of the actuator unit 492 by the linear movement mechanism 493, and controls the pressing load of the first substrate W1 by the pressing pin 491 by the actuator unit 492.
  • the upper chuck holding unit 450 is provided with an upper imaging unit 451 that images the upper surface (bonding surface) of the second substrate W2 held by the lower chuck 441.
  • an upper imaging unit 451 that images the upper surface (bonding surface) of the second substrate W2 held by the lower chuck 441.
  • a CCD camera is used for the upper imaging unit 451.
  • the lower chuck 441 is supported by a first lower chuck moving portion 460 provided below the lower chuck 441.
  • the first lower chuck moving unit 460 moves the lower chuck 441 in the horizontal direction (X-axis direction) as described later. Further, the first lower chuck moving unit 460 is configured to be able to move the lower chuck 441 in the vertical direction and to be rotatable around the vertical axis.
  • the first lower chuck moving unit 460 is provided with a lower imaging unit 461 that images the lower surface (bonding surface) of the first substrate W1 held by the upper chuck 440 (see FIG. 9).
  • a CCD camera is used for the lower imaging unit 461.
  • the first lower chuck moving unit 460 is provided on the lower surface side of the first lower chuck moving unit 460, and is attached to a pair of rails 462 and 462 extending in the horizontal direction (X-axis direction).
  • the first lower chuck moving unit 460 is configured to be movable along the pair of rails 462 and 462.
  • the pair of rails 462 and 462 are disposed in the second lower chuck moving unit 463.
  • the second lower chuck moving part 463 is provided on the lower surface side of the second lower chuck moving part 463 and attached to a pair of rails 464 and 464 extending in the horizontal direction (Y-axis direction).
  • the second lower chuck moving unit 463 is configured to be movable in the horizontal direction (Y-axis direction) along the pair of rails 464 and 464.
  • the pair of rails 464 and 464 are disposed, for example, on a mounting table 465 provided on the bottom surface of the processing container 400.
  • FIG. 10 is a flowchart showing processing performed by the bonding system 100.
  • the various processes shown in FIG. 10 are executed based on control by the control unit 4a.
  • a cassette C1 containing a plurality of first substrates W1, a cassette C2 containing a plurality of second substrates W2, and an empty cassette C3 are mounted on a predetermined mounting plate 111 of the loading / unloading station 200. Ru. Thereafter, the first substrate W1 in the cassette C1 is taken out by the transfer device 122, and transferred to the transition device of the third processing block G3 of the processing station 300.
  • the first substrate W1 is transported by the transport device 61 to the surface modification device 30 of the first processing block G1.
  • the oxygen gas which is a processing gas is excited to be plasmatized and ionized in a predetermined reduced pressure atmosphere.
  • the oxygen ions are irradiated to the bonding surface of the first substrate W1, and the bonding surface is plasma-treated. Thereby, the bonding surface of the first substrate W1 is reformed (step S201).
  • the first substrate W1 is transported by the transport device 61 to the surface hydrophilization device 40 of the second processing block G2.
  • the surface hydrophilization device 40 pure water is supplied onto the first substrate W1 while rotating the first substrate W1 held by the spin chuck. Thereby, the bonding surface of the first substrate W1 is hydrophilized. Further, the bonding surface of the first substrate W1 is cleaned by the pure water (step S202).
  • the first substrate W1 is transported by the transport device 61 to the bonding device 41 of the second processing block G2.
  • the first substrate W ⁇ b> 1 carried into the bonding apparatus 41 is transferred to the position adjustment mechanism 420 by the wafer transfer mechanism 411 via the transition 410.
  • the horizontal direction of the first substrate W1 is adjusted by the position adjustment mechanism 420 (step S203).
  • the first substrate W1 is delivered from the position adjusting mechanism 420 to the holding arm 431 of the reversing mechanism 430. Subsequently, in the transport region T1, the front and back surfaces of the first substrate W1 are reversed by inverting the holding arm 431 (step S204). That is, the bonding surface of the first substrate W1 is directed downward.
  • the holding arm 431 of the reversing mechanism 430 pivots and moves below the upper chuck 440.
  • the first substrate W1 is delivered from the reversing mechanism 430 to the upper chuck 440.
  • the non-bonding surface of the first substrate W1 is held by suction on the upper chuck 440 in a state where the notch portion is directed in a predetermined direction (step S205).
  • steps S201 to S205 described above is performed on the first substrate W1
  • the processing of the second substrate W2 is performed.
  • the second substrate W 2 in the cassette C 2 is taken out by the transfer device 122 and transferred to the transition device of the processing station 300.
  • the second substrate W2 is transported by the transport device 61 to the surface reforming device 30, and the bonding surface of the second substrate W2 is reformed (step S206).
  • the second substrate W2 is transported to the surface hydrophilization device 40 by the transport device 61, the bonding surface of the second substrate W2 is hydrophilized, and the bonding surface is cleaned (step S207).
  • the second substrate W2 is transported to the bonding device 41 by the transport device 61.
  • the second substrate W 2 carried into the bonding apparatus 41 is transferred to the position adjusting mechanism 420 by the wafer transfer mechanism 411 via the transition 410.
  • the horizontal direction of the second substrate W2 is adjusted by the position adjustment mechanism 420 (step S208).
  • the second substrate W2 is transferred to the lower chuck 441 by the wafer transfer mechanism 411 and held by suction on the lower chuck 441 (step S209).
  • the lower surface of the second substrate W ⁇ b> 2 is attracted and held by the lower chuck 441 with the notch portion directed in a predetermined direction.
  • step S210 position adjustment in the horizontal direction between the first substrate W1 held by the upper chuck 440 and the second substrate W2 held by the lower chuck 441 is performed.
  • a plurality of predetermined reference points are formed on the bonding surface of the first substrate W1.
  • a plurality of predetermined reference points are also formed on the bonding surface of the second substrate W2.
  • predetermined patterns P formed on the first substrate W1 and the second substrate W2 are used as these reference points.
  • the number of reference points can be set arbitrarily.
  • the horizontal position of the upper imaging unit 451 and the lower imaging unit 461 is adjusted. Specifically, the lower chuck 441 is horizontally moved by the first lower chuck moving unit 460 and the second lower chuck moving unit 463 so that the lower imaging unit 461 is positioned substantially below the upper imaging unit 451. . Then, a common target is confirmed between the upper imaging unit 451 and the lower imaging unit 461, and the horizontal position of the lower imaging unit 461 is finely adjusted so that the horizontal positions of the upper imaging unit 451 and the lower imaging unit 461 coincide. Be done.
  • the upper imaging unit 451 is used to form the bonding surface of the second substrate W2
  • the plurality of reference points are sequentially imaged.
  • a plurality of reference points formed on the bonding surface of the first substrate W1 are sequentially imaged using the lower imaging unit 461.
  • the captured image data is output to the control unit 4 a of the control device 4.
  • the reference point of the first substrate W1 matches the reference point of the second substrate W2 based on the image data taken by the upper imaging unit 451 and the image data taken by the lower imaging unit 461.
  • the horizontal position of the lower chuck 441 is adjusted by the first lower chuck moving unit 460 and the second lower chuck moving unit 463.
  • the horizontal positions of the upper chuck 440 and the lower chuck 441 are adjusted, and the horizontal positions of the first substrate W1 and the second substrate W2 are adjusted.
  • the lower chuck 441 is moved vertically upward by the first lower chuck moving unit 460 to adjust the vertical position of the upper chuck 440 and the lower chuck 441, whereby the first chuck held by the upper chuck 440
  • the vertical positions of the first substrate W1 and the second substrate W2 held by the lower chuck 441 are adjusted (step S211).
  • a bonding process is performed on the first substrate W1 held by the upper chuck 440 and the second substrate W2 held by the lower chuck 441 (step S212).
  • the bonding process by lowering the pressing pin 491 of the striker 490, the central portion of the first substrate W1 is pushed down, and the central portion of the first substrate W1 and the central portion of the second substrate W2 are brought into contact and pressed.
  • the bonding region between the first substrate W1 and the second substrate W2 is expanded from the central portion to the outer peripheral portion of the first substrate W1 and the second substrate W2, whereby the bonding surface of the first substrate W1 and the second The bonding surface of the substrate W2 abuts on the entire surface, and the first substrate W1 and the second substrate W2 are bonded.
  • step S212 the superposed substrate T formed in step S212 is transported to the measuring device 1 by the transport device 61, and it is inspected whether or not the first substrate W1 and the second substrate W2 are properly bonded. (Step S213).
  • the measuring apparatus 1 irradiates infrared light on the polymerization substrate T, and captures an image of the reflected light with the imaging device 3 to obtain an image of the inside of the polymerization substrate T. Then, the control unit 4a measures the amount of deviation between the first substrate W1 and the second substrate W2 based on the obtained image.
  • the measuring device 1 optimizes the wavelength range of the infrared light passing through the filter 201 by controlling the temperature of the filter 201. Therefore, the polymer substrate is formed by the surface reflected light L2 (see FIG. 2). It can suppress that the visibility inside T is reduced.
  • the control unit 4a determines whether or not the bonding between the first substrate W1 and the second substrate W2 has been appropriately performed based on the measurement result. For example, when the shift amount between the first substrate W1 and the second substrate W2 exceeds the threshold value, the control unit 4a determines that the bonding between the first substrate W1 and the second substrate W2 is not properly performed. Do.
  • the control unit 4a may inspect whether or not a void or a particle exists inside the superposed substrate T based on the image captured by the imaging device 3.
  • the superposed substrate T is transported to the transition device (not shown) of the third processing block G3 by the transport device 61, and then transported to the cassette C3 by the transport device 122 of the loading / unloading station 200.
  • the transport device 61 transport device 61
  • the cassette C3 transport device 122 of the loading / unloading station 200.
  • the polymerization substrate T is inspected in the measuring apparatus 1, for example, the polymerization in which the first substrate W1 and the second substrate W2 are bonded in a shifted state. Because the substrate T can be discovered prior to removal from the bonding system 100, the reliability of the bonding system 100 can be enhanced.
  • the measurement of the superposed substrate T is performed using the measuring device 1.
  • the measuring device 1 can also be used for the measurement of the first substrate W1 and the second substrate W2.
  • the bonding system 100 may perform the process of step S210 shown in FIG. 10, that is, the process of adjusting the horizontal position of the first substrate W1 and the second substrate W2 using the measuring apparatus 1.
  • through holes penetrating vertically in upper chuck 440 and upper chuck holding portion 450 are provided, and infrared light from measuring apparatus 1 is irradiated to first substrate W1 and second substrate W2 through the through holes. You should do it.
  • FIG. 11 is a view showing the configuration of a measuring apparatus according to another embodiment.
  • a measuring apparatus 1A includes an optical device 2A and an imaging device 3A.
  • the optical device 2A includes a light generation unit 21.
  • the light generation unit 21 includes a housing 21a, a light source 21b, and a filter unit 21c.
  • the optical device 2A obliquely irradiates infrared light L11 to the plate surface of the substrate W.
  • the imaging device 3A includes an imaging element 31A.
  • the imaging device 31A is, for example, a CMOS (Complementary MOS) sensor, and infrared light reflected from the substrate W, specifically, surface reflected light L12 reflected on the surface of the film F formed on the substrate W, and the substrate It is arrange
  • CMOS Complementary MOS
  • the measuring apparatus 1A can measure, for example, the thickness of the film F formed on the substrate W based on the difference between the light receiving position of the surface reflected light L12 and the light receiving position of the internal reflected light L14.
  • the temperature of the filter 201 in the filter unit 21c is controlled using the cooling mechanism 202 to adjust the ratio of the surface reflection light L12 and the internal reflection light L14, thereby the thickness of the substrate W
  • An optimal image can be obtained for measurement. That is, for example, it is possible to prevent that the ratio of the surface reflected light L12 is too high and it becomes difficult to specify the position of the internal reflected light L14.
  • the thickness measurement of the substrate W can be performed with high accuracy.
  • the object substrate in measuring device 1 and 1A is not restricted to a silicon wafer, and a glass substrate It may be another substrate such as.
  • the filter 201 provided in the measuring device 1 or 1A may be formed of a material other than silicon.
  • the filter 201 may be formed of the same material as the target substrate.
  • light to be emitted to the target substrate does not necessarily have to be infrared light, and may be, for example, visible light.
  • the filter portion 21c is disposed inside the housing 21a to heat the filter 201 using heat generated from the light source 21b, but the arrangement of the filter portion 21c is If it is a position heated by the light source 21b, it will not be limited to the inside of case 21a.
  • the filter unit 21c may be disposed inside the optical devices 2 and 2A, specifically, between the light guide 21d and the reflecting mirror 22b.
  • the measuring devices 1 and 1A may also include a heating mechanism that heats the filter 201.
  • the filter unit 21c may be disposed at a place where the heat generated from the light source 21b does not reach.

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Pathology (AREA)
  • General Health & Medical Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Immunology (AREA)
  • Biochemistry (AREA)
  • Analytical Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Optics & Photonics (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Pressure Welding/Diffusion-Bonding (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
  • Optical Filters (AREA)

Abstract

Un mode de réalisation de la présente invention concerne un dispositif optique (2, 2A) comprenant : une source de lumière (21B) ; un filtre (201) ; un mécanisme de refroidissement (202) ; et une unité de commande (4a). Le filtre (201) permet à la lumière située dans une région de longueur d'onde et faisant partie de la lumière émise par la source de lumière (21b), de le traverser. Le mécanisme de refroidissement (202) refroidit le filtre (201). L'unité de commande (4a) commande le mécanisme de refroidissement (202) afin de régler la région de longueur d'onde de la lumière qui est autorisée par le filtre (201) à le traverser.
PCT/JP2018/043308 2017-12-08 2018-11-26 Dispositif optique, dispositif de mesure, système de jonction et procédé de mesure WO2019111736A1 (fr)

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CN112752963B (zh) * 2019-08-29 2024-05-24 汤浅系统机器株式会社 变形试验机

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1079551A (ja) * 1996-07-11 1998-03-24 Nec Corp 半導体レーザ装置
JP2009150777A (ja) * 2007-12-20 2009-07-09 Nikon Corp 表面検査装置
JP2011186182A (ja) * 2010-03-09 2011-09-22 Claro Inc 顕微鏡装置
WO2014007044A1 (fr) * 2012-07-06 2014-01-09 日本碍子株式会社 Dispositif chauffant de commande de longueur d'onde
JP2016090410A (ja) * 2014-11-06 2016-05-23 東レエンジニアリング株式会社 基板検査装置および方法
WO2016190381A1 (fr) * 2015-05-26 2016-12-01 株式会社ブイ・テクノロジー Dispositif d'éclairage pour l'exposition, appareil d'exposition et procédé d'exposition

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1079551A (ja) * 1996-07-11 1998-03-24 Nec Corp 半導体レーザ装置
JP2009150777A (ja) * 2007-12-20 2009-07-09 Nikon Corp 表面検査装置
JP2011186182A (ja) * 2010-03-09 2011-09-22 Claro Inc 顕微鏡装置
WO2014007044A1 (fr) * 2012-07-06 2014-01-09 日本碍子株式会社 Dispositif chauffant de commande de longueur d'onde
JP2016090410A (ja) * 2014-11-06 2016-05-23 東レエンジニアリング株式会社 基板検査装置および方法
WO2016190381A1 (fr) * 2015-05-26 2016-12-01 株式会社ブイ・テクノロジー Dispositif d'éclairage pour l'exposition, appareil d'exposition et procédé d'exposition

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