WO2019105431A1 - Composant électroluminescent à points quantiques et dispositif d'affichage - Google Patents

Composant électroluminescent à points quantiques et dispositif d'affichage Download PDF

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WO2019105431A1
WO2019105431A1 PCT/CN2018/118273 CN2018118273W WO2019105431A1 WO 2019105431 A1 WO2019105431 A1 WO 2019105431A1 CN 2018118273 W CN2018118273 W CN 2018118273W WO 2019105431 A1 WO2019105431 A1 WO 2019105431A1
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layer
transport layer
electron transport
quantum dot
electroluminescent device
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PCT/CN2018/118273
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English (en)
Chinese (zh)
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魏雄伟
李哲
谢相伟
黄航
宋晶尧
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广东聚华印刷显示技术有限公司
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H10K50/115—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising active inorganic nanostructures, e.g. luminescent quantum dots
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/14—Carrier transporting layers
    • H10K50/16—Electron transporting layers
    • H10K50/165—Electron transporting layers comprising dopants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/14—Carrier transporting layers
    • H10K50/16—Electron transporting layers
    • H10K50/166—Electron transporting layers comprising a multilayered structure

Definitions

  • the present invention relates to the field of quantum dots, and more particularly to quantum dot electroluminescent devices and displays.
  • Quantum dots are nano-sized semiconductor materials with quantum confinement effects. When excited by light or electricity, quantum dots emit very pure light, featuring high luminous efficiency and stable performance.
  • Quantum Dot Light Emitting Diode (QLED) devices fabricated by quantum dot electroluminescence properties have received extensive attention in recent years. Compared with traditional organic light-emitting diodes (OLEDs), QLEDs have superior color purity, brightness and viewing angle.
  • the quantum dot light-emitting diodes using quantum dot materials as light-emitting layers have broad application prospects in the fields of solid-state illumination and flat panel display, and have attracted extensive attention in academia and industry.
  • the performance of existing QLED devices has been greatly improved, but there is still a gap between the luminous efficiency and the requirements of industrial production.
  • the structure of a typical quantum dot light-emitting diode is a hole transport layer, a quantum dot light-emitting layer, and an electron transport layer.
  • the electron and hole transport rates are different, resulting in an imbalance of positive load carriers.
  • Carrier imbalance is one of the important factors affecting the performance of QLED devices, especially the luminous efficiency and lifetime of QLED devices. How to obtain effective carrier balance and further improve the performance of QLED devices is still the focus of current academic and industrial research and development.
  • the present invention provides a quantum dot electroluminescent device comprising a first electrode layer and a second electrode layer disposed opposite to each other, and a light emitting layer disposed between the first electrode layer and the second electrode layer. a first electron transport layer between the light emitting layer and the second electrode layer, and a second electron transport layer disposed between the first electron transport layer and the second electrode layer;
  • the material of the first electron transport layer includes an inorganic metal oxide, and the material of the second electron transport layer includes an organic electron transport material.
  • the inorganic metal oxide is one or more of a monovalent metal oxide and a multi-metal oxide.
  • the multi-metal oxide is selected from the group consisting of zinc magnesium oxide, zinc tin oxide, zinc aluminum oxide, calcium zinc oxide, zinc tungsten oxide, zinc zinc oxide, zinc zinc oxide, and ZnO-TiO 2 -SnO 2 . And one or more of ZnO-MgO-TiO 2 ; and/or
  • the monobasic metal oxide is selected from one or more of ZnO, MgO, TiO 2 , SnO 2 , ZrO 2 , HfO 2 or Ta 2 O 3 .
  • the first electron transport layer further comprises a polymer material PEIE.
  • the organic electron transporting material is selected from one or more of the group consisting of NBphen, TPBi, Bpy-FOXD, BP4mPy, BTB, BIPO, 3TPYMB, PBD, BAlq, PEIE, Bphen, TmPyPB, and BCP.
  • the second electron transport layer further includes a dopant material selected from the group consisting of a metal, a metal inorganic salt or an organometallic complex; and/or
  • the dopant material accounts for 1% to 60% of the total mass of the second electron transport layer.
  • the metal is selected from the group consisting of Li, Na, K, Rb, Cs, or Yb; and/or
  • the metal inorganic salt is selected from the group consisting of Li 2 CO 3 , K 2 SiO 3 , Rb 2 CO 3 or Cs 2 CO 3 ; and/or
  • the organometallic complex is selected from the group consisting of LiQ, AlQ 3 .
  • the dopant material comprises from 40% to 60% of the total mass of the second electron transport layer.
  • the first electron transport layer has a thickness of 1-150 nm; and/or
  • the second electron transport layer has a thickness of 1 to 150 nm.
  • the material of the first electron transport layer is a composite material of an inorganic metal oxide or an inorganic metal oxide and a polymer material PEIE
  • the material of the second electron transport layer is an organic electron transport material.
  • a composite of an organic electron transport material and a dopant material is also included in the material of the first electron transport layer.
  • one or more of a hole injection layer, a hole transport layer, a hole blocking layer, an electron blocking layer, and an electron injection layer are further included.
  • the electroluminescent device comprises one of a hole injection layer, a hole transport layer, a hole blocking layer, an electron blocking layer or an electron injection layer, the hole injection layer, the hole a transport layer or an electron blocking layer is disposed between the first electrode layer and the light emitting layer, or the electron injection layer is disposed between the second electrode layer and the second electron transport layer, or An electron blocking layer is disposed between the light emitting layer and the second electron transport layer.
  • the electroluminescent device includes a hole injection layer, a hole transport layer, and an electron blocking layer, and the hole injection layer, the hole transport layer, and the electron blocking layer are stacked on The first electrode layer and the light emitting layer are disposed, and the hole injection layer is laminated with the first electrode.
  • the electroluminescent device includes a hole injection layer and a hole transport layer, and the hole injection layer and the hole transport layer are stacked on the first electrode layer and the light emitting layer Between the layers, the hole injection layer is laminated with the first electrode.
  • the electroluminescent device includes a hole transport layer and an electron blocking layer, and the hole transport layer and the electron blocking layer are stacked on the first electrode layer and the light emitting layer And the hole transport layer is laminated with the first electrode.
  • the electroluminescent device includes an electron blocking layer and an electron injection layer disposed between the second electrode layer and the second electron transport layer, the electron blocking A layer is disposed between the light emitting layer and the second electron transport layer.
  • Another object of the present invention is to provide a display comprising the above quantum dot electroluminescent device.
  • the present invention has the following beneficial effects:
  • the first electron transport layer includes an inorganic metal oxide material
  • the second electron transport layer includes an organic electron transport material.
  • the electron transport layers of two different materials are superimposed to effectively control the electron mobility.
  • the difference between the hole mobility and the electron mobility is weakened, the carrier balance is achieved, and the current efficiency is greatly improved.
  • the inorganic metal oxide material or the organic electron transport material is used alone, the current efficiency cannot be effectively improved. If the metal oxide and the organic electron transport material are mixed in proportion, the mixed material is used as the electron transport layer material, and a suitable one is sought. There are great difficulties in the selection of solvent and electron transport layer film-forming preparation processes, and the efficiency of the device is low.
  • the present application preferably uses a multi-element metal oxide zinc magnesium oxide as the first electron transporting material, preferably an organic electron transporting material doped with the organometallic complex LiQ as the second electron transporting layer, so that the electron mobility and the quantum dot electroluminescent device are empty.
  • the hole migration rate is balanced and good current efficiency is obtained.
  • the space charge accumulation in the device is reduced, the quantum dot is better in electrical neutrality, and the efficiency of quantum dot electroluminescence is improved, which can be applied to solid-state illumination, flat panel display and the like.
  • FIG. 1 is a schematic structural view of Embodiment 1 of the present invention.
  • quantum dot electroluminescent device of the present invention will be further described in detail below in conjunction with specific embodiments.
  • a structure of a quantum dot electroluminescent device includes a first electrode layer, a light emitting layer, a first electron transport layer, a second electron transport layer, and a second electrode layer which are laminated.
  • the first electrode layer is an anode layer.
  • the anode material may be transparent or opaque, and may be selected from ITO, AZO, TZO, nano silver wire film or graphene.
  • the anode material is ITO and has a thickness of 100-150 nm.
  • the luminescent layer is a quantum dot luminescent layer, and electrons transported from the anode direction and electrons transported in the cathode direction converge in the quantum dot layer to form photons, which are recombined by photons. Therefore, whether the mobility of holes and the mobility of electrons are balanced have a large influence on the luminous efficiency of the quantum dot electroluminescent device. Understandably, the quantum dot material may be selected from CdSe (cadmium selenide), CdS (cadmium sulfide), CdTe (cadmium telluride), ZnSe (zinc selenide), ZnTe (zinc telluride), ZnS (zinc sulfide), etc. .
  • quantum dots can be regulated by changing the particle size and chemical composition.
  • quantum dots of a core/shell structure have been developed.
  • the quantum dot material is a CdSe/CdS core-shell structure, that is, a nanocrystalline semiconductor material having CdSe as a core and CdS as a shell. Improve quantum dot stability and quantum yield.
  • the first electron transport layer is located on the light-emitting layer, and the material comprises an inorganic metal oxide.
  • the addition of the metal oxide is advantageous for improving the stability of the quantum dot electroluminescent device due to its photochemical stability, and the electron mobility of the metal oxide is high. , matching the energy level of the quantum dot.
  • the inorganic metal oxide may be a monovalent metal oxide such as one or more of ZnO, MgO, TiO 2 , SnO 2 , ZrO 2 , HfO 2 or Ta 2 O 3 .
  • the inorganic metal oxide may also be a multi-metal oxide such as zinc magnesium oxide, zinc tin oxide, zinc aluminum oxide, zinc calcium oxide, zinc tungsten oxide, zinc zinc oxide, zinc oxide nickel, ZnO-TiO 2 -SnO 2 and ZnO.
  • a multi-metal oxide such as zinc magnesium oxide, zinc tin oxide, zinc aluminum oxide, zinc calcium oxide, zinc tungsten oxide, zinc zinc oxide, zinc oxide nickel, ZnO-TiO 2 -SnO 2 and ZnO.
  • the material of the first electron transport layer is a multi-element metal oxide zinc magnesium oxide.
  • the first electron transport layer may also be a combination of an inorganic metal oxide and a polymer material PEIE.
  • PEIE is a polyethoxyethyleneimine.
  • the second electron transport layer is on the first electron transport layer, and the material includes an organic electron transport material.
  • the organic electron transporting material is selected from the group consisting of organic small molecule materials NBphen (2,9-Bis(naphthalen-2-yl)-4,7-diphenyl-1,10-phenanthroline, 2,9-bis(naphthalene-2) -yl)-4,7-diphenyl-1,10-phenanthroline), Bphen(4,7-Diphenyl-1,10-phenanthroline,4,7-diphenyl-1,10-phenanthroline ), TPBi (1,3,5-Tris(1-phenyl-1H-benzimidazol-2-yl)benzene, 1,3,5-tris(1-phenyl-1H-benzimidazol-2-yl)benzene ), Bpy-FOXD(2,7-Bis[2-(2,2'-bipyridine-6-yl)-1,3,4-oxadiaz
  • TmPyPB is 1,3,5-tris(m-pyridin-3-ylphenyl)benzene
  • BCP is bathing copper
  • the organic electron transporting material may also be organic polymeric material PEIE.
  • the second electron transport layer further comprises a doping material selected from the group consisting of a metal, a metal inorganic salt or an organometallic complex.
  • the metal is selected from the group consisting of Li, Na, K, Rb, Cs or Yb; the metal inorganic salt is selected from Li 2 CO 3 , K 2 SiO 3 , Rb 2 CO 3 or Cs 2 CO 3 ; the organometallic complex is selected from LiQ , AlQ 3 (Tris-(8-hydroxyquinoline) aluminum, tris(8-hydroxyquinoline) aluminum).
  • the dopant material is LiQ and LiQ is lithium octahydroxyquinolate.
  • the doping material accounts for 1% to 60% of the total mass of the second electron transport layer.
  • the dopant material accounts for 40%-60% of the total mass of the second electron transport layer.
  • the above doping ratio is advantageous for increasing the carrier concentration, mobility, and conductivity of the second electron transport layer.
  • the quantum dot light-emitting layer is in direct contact with the pure organic electron transport layer, charge transfer occurs automatically when no external voltage is applied, and the quantum dots are charged, resulting in a decrease in luminous efficiency.
  • the second electrode layer is on the second electron transport layer. It can be understood that the second electrode layer is a cathode layer.
  • the material of the second electrode layer is selected from, but not limited to, silver, aluminum or a silver-based alloy.
  • the above embodiment can control the mobility of electrons by providing two layers of electron transport layers. Further, the difference in mobility between electrons and holes is weakened.
  • a structure of a quantum dot electroluminescent device includes the above first electrode layer, light emitting layer, first electron transport layer, second electron transport layer, and second electrode layer, and further includes substrate and hole transport Floor.
  • the substrate is used to carry other structural layers.
  • the substrate may be a rigid substrate or a flexible substrate.
  • the rigid substrate can be made of ceramic or various types of glass.
  • the flexible substrate may be a polyimide film (PI) and a derivative thereof, polyethylene naphthalate (PEN), phosphoenolpyruvate (PEP) or a diphenylene ether resin.
  • the hole transport layer is located above the first electrode layer to transport holes and allow holes to reach the light-emitting layer.
  • the material of the hole transport layer may be polytetraphenylbenzidine or polyvinylcarbazole.
  • the material of the hole transport layer is TFB, and the TFB is poly[(9,9-dioctylfluorene-2,7-diyl)-co-(4,4'-(N-(4-) Phenyl)diphenylamine)];
  • the hole transport layer After the hole transport layer is added, the difference between the mobility of electrons and holes is further weakened, and the balance of carriers is better realized, and the current effect is better.
  • a structure of a quantum dot electroluminescent device includes a substrate, a first electrode layer, a hole transport layer, a light emitting layer, a first electron transport layer, a second electron transport layer, and a second electrode layer. Also included is one or more layers of a hole injection layer, a hole blocking layer, an electron blocking layer, and an electron injection layer, wherein the hole injection layer is disposed between the first electrode layer and the hole transport layer, and the electron blocking layer is disposed at Between the hole transport layer and the light emitting layer, an electron injection layer is disposed between the second electrode layer and the second electron transport layer, and a hole blocking layer is disposed on the light emitting layer and the first electron transport layer between.
  • the hole injection layer is located above the substrate and the first electrode layer, and the hole injection layer can provide holes.
  • the material of the hole injection layer is PEDOT:PSS
  • PEDOT:PSS is an aqueous solution of a high molecular polymer, and the conductivity is high. According to different formulations, an aqueous solution having different conductivity can be obtained.
  • This compound is composed of two substances, PEDOT and PSS.
  • PEDOT is a polymer of EDOT (3,4-ethylenedioxythiophene monomer)
  • PSS is a polystyrene sulfonate.
  • the hole injection layer, the hole blocking layer, the electron injection layer, and the electron blocking layer are auxiliary film layers in order to further improve the light-emitting efficiency of the light-emitting function layer.
  • Each functional layer of the above quantum dot electroluminescent device can be processed into a film by a solution method including, but not limited to, inkjet printing, spin coating, slit coating, and screen printing, in addition to quantum dots.
  • Other functional layers than others can be formed into a film by a vacuum hot-dip evaporation process.
  • the present embodiment provides a quantum dot electroluminescent device having a structure as shown in FIG. 1.
  • the substrate 100, the first electrode layer 101, the hole injection layer 102, the hole transport layer 103, and the light emitting layer 104 are laminated in this order from bottom to top.
  • the material of the first electron transport layer 105 is ZnO; the material of the second electron transport layer 106 is TmPyPB: LiQ.
  • a glass substrate containing a transparent electrode of ITO 120 nm was washed with deionized water and isopropyl alcohol and sonicated continuously for 25 minutes, and then the liquid was blown dry with a nitrogen gun and treated under UV-O for 20 minutes to clean The surface of the ITO and enhance the work function of the ITO;
  • the thickness is 40 nm;
  • first electron transport layer material depositing a first electron transport layer material on the quantum dot light-emitting layer, and then baking at 120 ° C for 30 minutes in a nitrogen atmosphere to obtain a first electron transport layer, the material of the first electron transport layer being ZnO
  • the thickness of the first electron transport layer is 20 nm;
  • Al is evaporated on the second electron transport layer to form a second electrode, and the thickness of the second electrode is 120 nm.
  • the present embodiment provides a quantum dot electroluminescent device, which sequentially stacks the substrate 100, the first electrode layer 101, the hole injection layer 102, the hole transport layer 103, the light emitting layer 104, and the first electron transport layer 105 from bottom to top. a second electron transport layer 106 and a second electrode layer 107;
  • the material of the first electron transport layer 105 is MgO; the material of the second electron transport layer 106 is TmPyPB: LiQ.
  • a glass substrate containing a transparent electrode of ITO 120 nm was washed with deionized water and isopropyl alcohol and sonicated continuously for 25 minutes, and then the liquid was blown dry with a nitrogen gun and treated under UV-O for 20 minutes to clean The surface of the ITO and enhance the work function of the ITO;
  • the thickness is 40 nm;
  • first electron transport layer material depositing a first electron transport layer material on the quantum dot light-emitting layer, and then baking at 120 ° C for 30 minutes under a nitrogen atmosphere to obtain a first electron transport layer, the material of the first electron transport layer being MgO
  • the thickness of the first electron transport layer is 20 nm;
  • Al is evaporated on the second electron transport layer to form a second electrode, and the thickness of the second electrode is 120 nm.
  • the present embodiment provides a quantum dot electroluminescent device, which sequentially stacks the substrate 100, the first electrode layer 101, the hole injection layer 102, the hole transport layer 103, the light emitting layer 104, and the first electron transport layer 105 from bottom to top. a second electron transport layer 106 and a second electrode layer 107;
  • the material of the first electron transport layer 105 is TiO 2 ; the material of the second electron transport layer 106 is Bphen:LiQ.
  • a glass substrate containing a transparent electrode of ITO 120 nm was washed with deionized water and isopropyl alcohol and sonicated continuously for 25 minutes, and then the liquid was blown dry with a nitrogen gun and treated under UV-O for 20 minutes to clean The surface of the ITO and enhance the work function of the ITO;
  • the thickness is 40 nm;
  • first electron transport layer material depositing a first electron transport layer material on the quantum dot light-emitting layer, and then baking at 120 ° C for 30 minutes under a nitrogen atmosphere to obtain a first electron transport layer, the material of the first electron transport layer being TiO 2 , the thickness of the first electron transport layer is 20 nm;
  • Al is evaporated on the second electron transport layer to form a second electrode, and the thickness of the second electrode is 120 nm.
  • the present embodiment provides a quantum dot electroluminescent device, which sequentially stacks the substrate 100, the first electrode layer 101, the hole injection layer 102, the hole transport layer 103, the light emitting layer 104, and the first electron transport layer 105 from bottom to top. a second electron transport layer 106 and a second electrode layer 107;
  • the material of the first electron transport layer 105 is ZnO; the material of the second electron transport layer 106 is BCP:LiQ.
  • a glass substrate containing a transparent electrode of ITO 120 nm was washed with deionized water and isopropyl alcohol and sonicated continuously for 25 minutes, and then the liquid was blown dry with a nitrogen gun and treated under UV-O for 20 minutes to clean The surface of the ITO and enhance the work function of the ITO;
  • the thickness is 40 nm;
  • first electron transport layer material depositing a first electron transport layer material on the quantum dot light-emitting layer, and then baking at 120 ° C for 30 minutes in a nitrogen atmosphere to obtain a first electron transport layer, the material of the first electron transport layer being ZnO
  • the thickness of the first electron transport layer is 20 nm;
  • Al is evaporated on the second electron transport layer to form a second electrode, and the thickness of the second electrode is 120 nm.
  • the present embodiment provides a quantum dot electroluminescent device, which sequentially stacks the substrate 100, the first electrode layer 101, the hole injection layer 102, the hole transport layer 103, the light emitting layer 104, and the first electron transport layer 105 from bottom to top. a second electron transport layer 106 and a second electrode layer 107;
  • the material of the first electron transport layer 105 is MgO; the material of the second electron transport layer 106 is BCP: LiQ.
  • a glass substrate containing a transparent electrode of ITO 120 nm was washed with deionized water and isopropyl alcohol and sonicated continuously for 25 minutes, and then the liquid was blown dry with a nitrogen gun and treated under UV-O for 20 minutes to clean The surface of the ITO and enhance the work function of the ITO;
  • the thickness is 40 nm;
  • first electron transport layer material depositing a first electron transport layer material on the quantum dot light-emitting layer, and then baking at 120 ° C for 30 minutes under a nitrogen atmosphere to obtain a first electron transport layer, the material of the first electron transport layer being MgO
  • the thickness of the first electron transport layer is 20 nm;
  • Al is evaporated on the second electron transport layer to form a second electrode, and the thickness of the second electrode is 120 nm.
  • the present embodiment provides a quantum dot electroluminescent device, which sequentially stacks the substrate 100, the first electrode layer 101, the hole injection layer 102, the hole transport layer 103, the light emitting layer 104, and the first electron transport layer 105 from bottom to top. a second electron transport layer 106 and a second electrode layer 107;
  • the material of the first electron transport layer 105 is ZnMgO; the material of the second electron transport layer 106 is BCP: LiQ.
  • a glass substrate containing a transparent electrode of ITO 120 nm was washed with deionized water and isopropyl alcohol and sonicated continuously for 25 minutes, and then the liquid was blown dry with a nitrogen gun and treated under UV-O for 20 minutes to clean The surface of the ITO and enhance the work function of the ITO;
  • the thickness is 40 nm;
  • first electron transport layer material depositing a first electron transport layer material on the quantum dot light-emitting layer, and then baking at 120 ° C for 30 minutes under a nitrogen atmosphere to obtain a first electron transport layer, the material of the first electron transport layer being ZnMgO
  • the thickness of the first electron transport layer is 20 nm;
  • Al is evaporated on the second electron transport layer to form a second electrode, and the thickness of the second electrode is 120 nm.
  • the present embodiment provides a quantum dot electroluminescent device, sequentially stacking the first electrode layer 101, the light emitting layer 104, the first electron transport layer 105, the second electron transport layer 106, and the second electrode layer 107 from bottom to top;
  • the material of the first electron transport layer 105 is ZnO-TiO 2 -SnO 2 ; the material of the second electron transport layer 106 is TmPyPB:LiQ.
  • a glass substrate containing a transparent electrode of ITO 120 nm was washed with deionized water and isopropyl alcohol and sonicated continuously for 25 minutes, and then the liquid was blown dry with a nitrogen gun and treated under UV-O for 20 minutes to clean The surface of the ITO and enhance the work function of the ITO;
  • Al is evaporated on the second electron transport layer to form a second electrode having a thickness of 120 nm.
  • the present embodiment provides a quantum dot electroluminescent device, which sequentially stacks the substrate 100, the first electrode layer 101, the hole injection layer 102, the hole transport layer 103, the light emitting layer 104, and the first electron transport layer 105 from bottom to top. a second electron transport layer 106 and a second electrode layer 107;
  • the material of the first electron transport layer 105 is ZnMgO and PEIE; the material of the second electron transport layer 106 is PEIE.
  • a glass substrate containing a transparent electrode of ITO 120 nm was washed with deionized water and isopropyl alcohol and sonicated continuously for 25 minutes, and then the liquid was blown dry with a nitrogen gun and treated under UV-O for 20 minutes to clean The surface of the ITO and enhance the work function of the ITO;
  • the thickness is 40 nm;
  • Al is evaporated on the second electron transport layer to form a second electrode, and the thickness of the second electrode is 120 nm.
  • the embodiment provides a quantum dot electroluminescent device.
  • the structure of the electroluminescent device is basically the same as that of the embodiment 7. The difference is that a hole transport layer is disposed between the first electrode layer and the light emitting layer, and the hole is transported.
  • the material of the layer is TFB.
  • the present comparative example provides a quantum dot electroluminescent device comprising, in order from bottom to top, a substrate 100, a first electrode layer 101, a hole injection layer 102, a hole transport layer 103, a light emitting layer 104, an electron transport layer 105, and a Two electrode layer 107;
  • the material of the electron transport layer 105 is ZnO.
  • the preparation process of the quantum dot electroluminescent device of the present comparative example is as follows:
  • a glass substrate containing a transparent electrode of ITO 120 nm was washed with deionized water and isopropyl alcohol and sonicated continuously for 25 minutes, and then the liquid was blown dry with a nitrogen gun and treated under UV-O for 20 minutes to clean The surface of the ITO and enhance the work function of the ITO;
  • the thickness is 40 nm;
  • Al is evaporated on the electron transport layer to form a second electrode, and the thickness of the second electrode is 120 nm.
  • the present comparative example provides a quantum dot electroluminescent device comprising, in order from bottom to top, a substrate 100, a first electrode layer 101, a hole injection layer 102, a hole transport layer 103, a light emitting layer 104, an electron transport layer 106, and Two electrode layer 107;
  • the material of the electron transport layer 106 is TmPyPB: LiQ.
  • the preparation process of the quantum dot electroluminescent device of the present comparative example is as follows:
  • a glass substrate containing a transparent electrode of ITO 120 nm was washed with deionized water and isopropyl alcohol and sonicated continuously for 25 minutes, and then the liquid was blown dry with a nitrogen gun and treated under UV-O for 20 minutes to clean The surface of the ITO and enhance the work function of the ITO;
  • the thickness is 40 nm;
  • Al was evaporated on the electron transport layer to form a second electrode, and the thickness of the second electrode was 120 nm.
  • the preparation process of the quantum dot electroluminescent device of the present comparative example was the same as in Example 8.
  • the present comparative example provides a quantum dot electroluminescent device.
  • the structure of the electroluminescent device is substantially the same as that of Comparative Example 3, except that the material of the second electron transporting layer is TmPyPB.
  • the present comparative example provides a quantum dot electroluminescent device.
  • the structure of the electroluminescent device is basically the same as that of Embodiment 7, except that it does not contain the first electron transport layer, only the second electron transport layer, and the second electron transport.
  • the material of the layer is TmPyPB: LiQ.
  • the preparation process of the quantum dot electroluminescent device of the present comparative example was the same as that of Example 7, and the preparation step of the first electron transport layer was not included.
  • the quantum dot electroluminescent device of the above examples and comparative examples were tested for device current efficiency at a current density of 10 mA/cm 2 , and the current efficiency of Comparative Example 3 was normalized to 1, and the corresponding current efficiency value was obtained.
  • the results are as follows:
  • Example 8 the organic polymer material PEIE was added to the first electron transport layer to increase the current effect.
  • Comparative Example 3 and Comparative Example 4 when the organic small molecule material TmPyPB was added to the first electron transport layer, the current effect was poor.

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  • Electroluminescent Light Sources (AREA)

Abstract

La présente invention concerne un composant électroluminescent à points quantiques comprenant une première couche d'électrode, une couche électroluminescente et une seconde couche d'électrode empilées séquentiellement. Une première et une seconde couche de transport d'électrons sont disposées entre la couche électroluminescente et la seconde couche d'électrode. Les matériaux de la première couche de transport d'électrons comprennent un matériau de transport d'oxyde métallique inorganique. Les matériaux de la seconde couche de transport d'électrons comprennent un matériau organique de transport d'électrons. La présente invention empile et utilise les deux couches de transport d'électrons de différents matériaux, réduit la différence entre la mobilité des trous et la mobilité des électrons, met en œuvre un équilibre de porteurs de charge, augmente de manière considérable l'efficacité du courant, et est applicable dans les domaines de l'éclairage à semi-conducteurs et des dispositifs d'affichage de tablettes.
PCT/CN2018/118273 2017-11-29 2018-11-29 Composant électroluminescent à points quantiques et dispositif d'affichage WO2019105431A1 (fr)

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