WO2019073878A1 - Composé, substrat de formation de motif, agent de couplage photodégradable, procédé de formation de motif et procédé de production de transistor - Google Patents

Composé, substrat de formation de motif, agent de couplage photodégradable, procédé de formation de motif et procédé de production de transistor Download PDF

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Publication number
WO2019073878A1
WO2019073878A1 PCT/JP2018/037023 JP2018037023W WO2019073878A1 WO 2019073878 A1 WO2019073878 A1 WO 2019073878A1 JP 2018037023 W JP2018037023 W JP 2018037023W WO 2019073878 A1 WO2019073878 A1 WO 2019073878A1
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Prior art keywords
compound
substrate
pattern
pattern forming
group
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PCT/JP2018/037023
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English (en)
Japanese (ja)
Inventor
雄介 川上
山口　和夫
倫子 伊藤
Original Assignee
株式会社ニコン
学校法人神奈川大学
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Priority claimed from JP2018045274A external-priority patent/JP7121505B2/ja
Application filed by 株式会社ニコン, 学校法人神奈川大学 filed Critical 株式会社ニコン
Priority to CN201880065020.3A priority Critical patent/CN111183143B/zh
Priority to KR1020207010095A priority patent/KR20200062227A/ko
Publication of WO2019073878A1 publication Critical patent/WO2019073878A1/fr
Priority to US16/843,232 priority patent/US11953833B2/en

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    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
    • C07F7/02—Silicon compounds
    • C07F7/08—Compounds having one or more C—Si linkages
    • C07F7/18—Compounds having one or more C—Si linkages as well as one or more C—O—Si linkages
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/18—Pretreatment of the material to be coated
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/18—Pretreatment of the material to be coated
    • C23C18/20—Pretreatment of the material to be coated of organic surfaces, e.g. resins
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/18—Pretreatment of the material to be coated
    • C23C18/20—Pretreatment of the material to be coated of organic surfaces, e.g. resins
    • C23C18/28—Sensitising or activating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/31—Coating with metals
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
    • H05K3/18—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material

Definitions

  • the present invention relates to a compound, a pattern formation substrate, a photocleavable coupling agent, a pattern formation method, and a method of manufacturing a transistor.
  • the present application claims priority based on Japanese Patent Application No. 2017-197501, filed on Oct. 11, 2017, and Japanese Patent Application No. 2018-045274, filed on Mar. 13, 2018, The contents are incorporated herein.
  • Patent Document 1 describes a fluorine-containing compound whose contact angle can be changed before and after light irradiation.
  • a material not containing fluorine is desired.
  • Patent No. 4997765 gazette
  • a first aspect of the present invention is a compound represented by the following general formula (1).
  • X represents a halogen atom or an alkoxy group
  • R 1 represents an alkyl group having 1 to 5 carbon atoms, a group represented by the following formula (R2-1), or a group represented by the following formula (R2-2)
  • R 2 is a group represented by the following formula (R2-1) or (R2-2)
  • n0 is an integer of 0 or more
  • n1 is 0 to The integer of 5
  • n2 is a natural number of 1 to 5.
  • R 21 and R 22 each independently represent an alkyl group of 1 to 5 carbon atoms, and n is a natural number.
  • the wavy line means a bond.
  • a second aspect of the present invention is a patterning substrate having a surface chemically modified with the compound of the first aspect of the present invention.
  • a third aspect of the present invention is a photocleavable coupling agent comprising the compound of the first aspect of the present invention.
  • a fourth aspect of the present invention is a pattern forming method for forming a pattern on the surface to be treated of an object, wherein the step of chemically modifying the surface to be treated using the compound of the first aspect of the present invention And irradiating the chemically modified surface to be treated with light of a predetermined pattern to form a latent image comprising a hydrophilic area and a water repellent area, and disposing a pattern forming material on the hydrophilic area or the water repellent area.
  • a fifth aspect of the present invention is a pattern forming method for forming a pattern on a surface to be treated of an object, wherein the compound to be treated is chemically modified using the compound of the first aspect of the present invention. And irradiating a light of a predetermined pattern onto the chemically modified surface to be treated to generate a latent image consisting of a hydrophilic area and a water repellent area, and arranging an electroless plating catalyst in the hydrophilic area, And a step of performing electrolytic plating.
  • a sixth aspect of the present invention is a method of manufacturing a transistor having a gate electrode, a source electrode, and a drain electrode, wherein at least one of the gate electrode, the source electrode, and the drain electrode is It is a manufacturing method of a transistor including the process formed with the pattern formation method of the 4th mode or the 5th mode of the above.
  • the first embodiment of the present invention is a compound represented by the following general formula (1).
  • the compound of the present embodiment has a siloxane-based water repellent group.
  • the surface of an object such as a substrate
  • the surface of the object can be modified to be water repellent.
  • the water repellent group is eliminated, a hydrophilic group is generated, and the surface of the object can be modified to be hydrophilic.
  • the compound of the present embodiment can be substituted for the fluorine-based compound which has been conventionally used for reforming to water repellency, and further exhibits the liquid repellency and releasability unique to siloxane-based water repellent groups. It is considered possible.
  • X represents a halogen atom or an alkoxy group
  • R 1 represents an alkyl group having 1 to 5 carbon atoms, a group represented by the following formula (R2-1), or a group represented by the following formula (R2-2)
  • R 2 is a group represented by the following formula (R2-1) or (R2-2)
  • n0 is an integer of 0 or more
  • n1 is 0 to The integer of 5
  • n2 is a natural number of 1 to 5.
  • R 21 and R 22 each independently represent an alkyl group of 1 to 5 carbon atoms, and n is a natural number of 1 to 5].
  • the wavy line means a bond.
  • ⁇ X ⁇ X is a halogen atom or an alkoxy group.
  • the halogen atom represented by X can include a fluorine atom, a chlorine atom, a bromine atom or an iodine atom, but X is preferably an alkoxy group rather than a halogen atom.
  • n0 represents an integer of 0 or more, and is preferably an integer of 1 to 20, and more preferably an integer of 2 to 15 from the viewpoint of the availability of starting materials.
  • R 1 is an alkyl group having 1 to 5 carbon atoms, or a group represented by the following formula (R2-1) or (R2-2).
  • Examples of the alkyl group having 1 to 5 carbon atoms of R 1 include methyl group, ethyl group, propyl group, isopropyl group, n-butyl group, isobutyl group, tert-butyl group, pentyl group, isopentyl group and neopentyl group.
  • a methyl group or an ethyl group is preferable, and a methyl group is more preferable.
  • n1 is an integer of 0 to 5, and in the case of the disubstituted type described later, n1 is preferably a natural number of 1 to 5, more preferably 2 to 4, and particularly preferably 3. In the case of 1-substituted type, 0 is preferable. n2 is a natural number of 1 to 5, preferably 2 to 4, and more preferably 3.
  • R 21 and R 22 each independently represent an alkyl group of 1 to 5 carbon atoms, and n is a natural number.
  • the wavy line means a bond.
  • R 21 and R 22 each independently represent an alkyl group having 1 to 5 carbon atoms.
  • alkyl group having 1 to 5 carbon atoms include the groups described for R 1 above, among which a methyl group, an isopropyl group or a tert-butyl group is preferable.
  • N in the formula (R2-2) is a natural number, preferably 1 to 200, preferably 1 to 150, and more preferably 1 to 120.
  • Intermediate compound 14 ' can be obtained by reacting the intermediate compound 14 represented by the following formula with a siloxane compound.
  • Intermediate compound 14 may be produced by the method described in the examples described later, for example, as described in H. Nakayama et al. , Colloids Surf. B, 2010, 76, 88-97.
  • R 1 and R 21 are each independently an alkyl group having 1 to 5 carbon atoms.
  • a compound (1) of this embodiment can be obtained by further reacting a siloxane compound with the obtained intermediate compound 14 '.
  • R 1 and R 21 are each independently an alkyl group having 1 to 5 carbon atoms.
  • X represents a halogen atom or an alkoxy group, and n0 is an integer of 0 or more.
  • the compound represented by general formula (1) of 1-substituted linear type can also be manufactured by the following method. Specifically, an intermediate compound 13 represented by the following formula is reacted with a siloxane compound to obtain an intermediate compound 15.
  • R 1 and R 22 are each independently an alkyl group having 1 to 5 carbon atoms.
  • the resulting intermediate compound 15 can be reacted with squamimidyl carbonate to obtain an intermediate compound 15 '.
  • R 1 and R 22 are each independently an alkyl group having 1 to 5 carbon atoms.
  • the resulting intermediate compound 15 ' is further reacted with a siloxane compound to obtain the compound (1) of the present embodiment.
  • R 1 and R 21 are each independently an alkyl group having 1 to 5 carbon atoms.
  • X represents a halogen atom or an alkoxy group, and n0 is an integer of 0 or more.
  • the compound represented by the disubstituted general formula (1) can be produced by the following method. Specifically, each of the siloxane compounds can be reacted with an intermediate compound 25 represented by the following formula to obtain an intermediate compound 25 ′.
  • R 21 represents an alkyl group having 1 to 5 carbon atoms.
  • R 1 is an alkyl group having 1 to 5 carbon atoms.
  • a compound (1) of the present embodiment can be obtained by further reacting a siloxane compound with the obtained intermediate compound 25 '.
  • R 1 is an alkyl group having 1 to 5 carbon atoms.
  • X represents a halogen atom or an alkoxy group, and n0 is an integer of 0 or more.
  • R 1 is an alkyl group having 1 to 5 carbon atoms.
  • X represents a halogen atom or an alkoxy group, and n0 is an integer of 0 or more.
  • a second embodiment of the present invention is a substrate for pattern formation having a surface chemically modified using the compound of the first embodiment.
  • the surface of the substrate for pattern formation of this embodiment is modified using the compound of the first embodiment. For this reason, by selectively exposing through a mask or the like, a hydrophilic region is formed in the exposed area on the pattern forming substrate, and a water repellent area is formed in the unexposed area.
  • the pattern forming material can be selectively applied to the hydrophilic region formed in the exposed portion, and metal wiring Etc. can be formed.
  • the substrate is not particularly limited, and glass, quartz glass, silicon wafer, plastic plate, metal plate and the like are preferably mentioned. Moreover, you may use the board
  • the shape of the substrate is not particularly limited, and a flat surface, a curved surface, or a flat surface having a partially curved surface is preferable, and a flat surface is more preferable.
  • the area of the substrate is also not particularly limited, and a substrate having a surface of a size as long as the conventional coating method can be applied can be adopted.
  • pretreat the substrate surface When modifying the surface of the substrate, it is preferable to pretreat the substrate surface.
  • pretreatment with a piranha solution or pretreatment with a UV-ozone cleaner is preferable.
  • the third embodiment of the present invention is a photocleavable coupling agent comprising the compound of the first embodiment.
  • the photodegradable coupling agent of the present embodiment includes a photodegradable group having a liquid repellent group, and an adhesion group linked to the photodegradable group via a functional group, and the liquid repellent group has a siloxane structure.
  • the functional group is one that becomes a residue of an amino group after photolysis. Therefore, the photolytic coupling agent of the present embodiment can ensure a large difference in contact angle before and after light irradiation.
  • a fourth embodiment of the present invention is a pattern forming method for forming a pattern on a surface to be treated of an object, wherein the step of chemically modifying the surface to be treated using the compound of the first embodiment; Irradiating a light of a predetermined pattern onto the chemically modified surface to be treated to generate a latent image consisting of a hydrophilic area and a water repellent area; disposing a pattern forming material on the hydrophilic area or the water repellent area; And a pattern forming method comprising:
  • This step is a step of chemically modifying the surface to be treated using the compound of the first embodiment in the pattern forming method for forming a pattern on the surface to be treated of the object.
  • the object is not particularly limited, and, for example, metals, crystalline materials (for example, single crystalline, polycrystalline and partially crystalline materials), amorphous materials, conductors, semiconductors, insulators, optical elements, painted substrates , Fiber, glass, ceramics, zeolite, plastic, thermosetting and thermoplastic materials (eg, optionally doped: polyacrylate, polycarbonate, polyurethane, polystyrene, cellulose polymer, polyolefin, polyamide, polyimide, resin, polyester, polyphenylene Etc.), films, thin films, foils, etc.
  • crystalline materials for example, single crystalline, polycrystalline and partially crystalline materials
  • amorphous materials for example, conductors, semiconductors, insulators, optical elements, painted substrates , Fiber, glass, ceramics, zeolite, plastic
  • thermosetting and thermoplastic materials eg, optionally doped: polyacrylate, polycarbonate, polyurethane, polystyrene, cellulose polymer, polyole
  • the pattern formation method of the present embodiment it is preferable to form a circuit pattern for an electronic device on a flexible substrate.
  • a foil such as a resin film or stainless steel
  • the resin film may be made of polyethylene resin, polypropylene resin, polyester resin, ethylene vinyl copolymer resin, polyvinyl chloride resin, cellulose resin, polyamide resin, polyimide resin, polycarbonate resin, polystyrene resin, vinyl acetate resin, etc. It can be used.
  • flexibility refers to the property of being able to bend the substrate without breaking or breaking even when a force of about its own weight is applied to the substrate.
  • the property of being bent by the force of its own weight is also included in the flexibility.
  • the flexibility varies depending on the material, size, thickness, environment such as temperature, etc. of the substrate. Note that although a single strip-shaped substrate may be used as the substrate, a plurality of unit substrates may be connected to form a strip.
  • the method for chemically modifying the surface to be treated of the object is not particularly limited as long as the group represented by X in the general formula (1) is a method of binding to the substrate, and the immersion method, chemical treatment method Known methods such as can be used.
  • the chemical modification in this step can be performed, for example, by reacting the compound represented by the general formula (1) with a substrate as shown below.
  • X represents a halogen atom or an alkoxy group
  • R 1 is an alkyl group having 1 to 5 carbon atoms, a group represented by the above formula (R2-1) or (R2-2)
  • R 2 is A group represented by the formula (R2-1) or (R2-2)
  • n0 is a natural number.
  • n1 is an integer of 0 to 5
  • n2 is a natural number of 1 to 5.
  • This step is a step of exposing the chemically modified surface to be treated to generate a latent image consisting of a hydrophilic area and a water repellent area.
  • the light irradiated at the time of exposure is preferably ultraviolet light.
  • the light to be irradiated preferably includes light having a wavelength within the range of 200 nm to 450 nm, and more preferably includes light having a wavelength within the range of 320 nm to 450 nm. It is also preferable to emit light including light with a wavelength of 365 nm.
  • the light having these wavelengths can efficiently decompose the photolytic group.
  • As a light source low pressure mercury lamp, high pressure mercury lamp, super high pressure mercury lamp, xenon lamp, sodium lamp; gas laser such as nitrogen, liquid laser of organic dye solution, solid laser containing rare earth ion in inorganic single crystal, etc. It can be mentioned.
  • a light source other than a laser capable of obtaining monochromatic light light of a specific wavelength obtained by extracting a wide-band line spectrum or a continuous spectrum using an optical filter such as a band pass filter or a cutoff filter may be used.
  • a high pressure mercury lamp or an ultrahigh pressure mercury lamp is preferable as a light source because a large area can be irradiated at one time.
  • light can be emitted arbitrarily within the above range, but it is particularly preferable to emit light energy of distribution corresponding to the circuit pattern.
  • the group having water repellent performance is dissociated by irradiating a light of a predetermined pattern to the chemically modified surface to be treated, and residues having hydrophilic performance (amino group) are generated.
  • residues having hydrophilic performance (amino group) are generated.
  • this step it is preferable to generate a latent image of a circuit pattern on the surface of the flexible substrate due to the difference in hydrophilicity and water repellency.
  • a group having water repellent performance is dissociated as shown below to generate a residue having hydrophilic performance (amino group).
  • R 1 is an alkyl group having 1 to 5 carbon atoms, a group represented by the above formula (R2-1) or (R2-2), and R 2 is a group represented by the above formula (R2-1) or (R2 And a group represented by -2).
  • n0 is a natural number.
  • n1 is an integer of 0 to 5, and n2 is a natural number of 1 to 5.
  • Step of arranging pattern forming material This step is a step of arranging a pattern forming material in the hydrophilic area or the water repellent area generated in the above-mentioned step.
  • Wiring material in which particles of gold, silver, copper or alloys thereof are dispersed in a predetermined solvent, or precursor solution containing the above-mentioned metal, insulator (resin), as a pattern forming material
  • metal solution in which particles of gold, silver, copper or alloys thereof are dispersed in a predetermined solvent, or precursor solution containing the above-mentioned metal, insulator (resin), as a pattern forming material
  • Examples thereof include electronic materials in which a semiconductor, an organic EL light emitting material and the like are dispersed in a predetermined solvent, and a resist solution.
  • the pattern formation material is preferably a conductive material, a semiconductor material, or an insulating material.
  • the conductive material examples include a pattern forming material made of a dispersion liquid in which conductive fine particles are dispersed in a dispersion medium.
  • conductive fine particles for example, metal fine particles containing any of gold, silver, copper, palladium, nickel and ITO, these oxides, and fine particles of conductive polymer and superconductor, etc. are used.
  • These conductive fine particles can also be used by coating an organic substance or the like on the surface in order to improve the dispersibility.
  • the dispersion medium is not particularly limited as long as it can disperse the above-mentioned conductive fine particles and does not cause aggregation.
  • alcohols such as methanol, ethanol, propanol and butanol, n-heptane, n-octane, decane, dodecane, tetradecane, tetradecane, toluene, xylene, cymene, durene, indene, dipentene, tetrahydronaphthalene, decahydro Hydrocarbon compounds such as naphthalene and cyclohexylbenzene, ethylene glycol dimethyl ether, ethylene glycol diethyl ether, ethylene glycol methyl ethyl ether, diethylene glycol dimethyl ether, diethylene glycol diethyl ether, diethylene glycol methyl ethyl ether, 1,2-dimethoxyethane, bis (2-
  • water, alcohols, hydrocarbon compounds, and ether compounds are preferable in terms of the dispersibility of the fine particles, the stability of the dispersion, and the ease of application to the droplet discharge method (ink jet method),
  • water and a hydrocarbon type compound can be mentioned.
  • an organic semiconductor material composed of a dispersion liquid dispersed or dissolved in a dispersion medium can be used.
  • a low molecular weight material or a high molecular weight material of ⁇ electron conjugated system whose skeleton is composed of conjugated double bonds is desirable.
  • soluble low molecular weight materials such as acenes such as pentacene, and thienoacenes such as benzothienobenzothiophene
  • soluble high molecular weight materials such as polythiophene, poly (3-alkylthiophene) and polythiophene derivatives can be mentioned.
  • a soluble precursor material may be used which is converted to the above-described semiconductor by heat treatment, and examples of the pentacene precursor include sulfinylacetamide pentacene and the like.
  • the present invention is not limited to the organic semiconductor material, and an inorganic semiconductor material may be used.
  • Insulating materials are represented by polyimide, polyamide, polyester, acrylic, PSG (phosphor glass), BPSG (phosphoboron glass), polysilazane SOG, silicate SOG (Spin on Glass), alkoxysilicate SOG, and siloxane polymer.
  • An insulating material comprising a dispersion in which SiO 2 or the like having a Si—CH 3 bond is dispersed or dissolved in a dispersion medium can be mentioned.
  • a droplet discharge method As a method of arranging a pattern forming material, a droplet discharge method, an inkjet method, a spin coat method, a roll coat method, a slot coat method, a dip coat method, or the like can be applied.
  • a substrate processing apparatus 100 which is a roll-to-roll apparatus as shown in FIG. It may be used to form a pattern.
  • the structure of the substrate processing apparatus 100 is shown in FIG.
  • the substrate processing apparatus 100 performs processing on a substrate supply unit 2 that supplies a strip-shaped substrate (for example, a strip-shaped film member) S, and a surface (processed surface) Sa of the substrate S.
  • the substrate processing unit 3, the substrate recovery unit 4 for recovering the substrate S, the application unit 6 of the compound of the first embodiment, the exposure unit 7, the mask 8, the pattern material application unit 9, and these units And a controller CONT to control.
  • the substrate processing unit 3 can execute various processes on the surface of the substrate S after the substrate S is sent out from the substrate supply unit 2 and before the substrate recovery unit 4 recovers the substrate S.
  • This substrate processing apparatus 100 can be suitably used, when forming display elements (electronic device), such as an organic EL element and a liquid crystal display element, on a substrate S, for example.
  • FIG. 1 illustrates a method of using a photomask to generate desired pattern light
  • the present embodiment may be suitably applied to a maskless exposure method that does not use a photomask. it can.
  • a maskless exposure method of generating pattern light without using a photomask a method of using a spatial light modulation element such as DMD, a method of scanning a spot light as in a laser beam printer, and the like can be mentioned.
  • an XYZ coordinate system is set as shown in FIG. 1, and the following description will be made using this XYZ coordinate system as appropriate.
  • the XYZ coordinate system for example, an X axis and a Y axis are set along a horizontal surface, and a Z axis is set upward along the vertical direction.
  • the substrate processing apparatus 100 transports the substrate S along the X axis as a whole from the minus side ( ⁇ side) to the plus side (+ side). At that time, the width direction (short direction) of the strip-like substrate S is set in the Y-axis direction.
  • the resin film may be made of polyethylene resin, polypropylene resin, polyester resin, ethylene vinyl copolymer resin, polyvinyl chloride resin, cellulose resin, polyamide resin, polyimide resin, polycarbonate resin, polystyrene resin, vinyl acetate resin, etc. It can be used.
  • the substrate S preferably has a small thermal expansion coefficient so that the dimensions do not change even if it receives heat of, for example, about 200.degree.
  • an inorganic filler can be mixed with a resin film to reduce the thermal expansion coefficient.
  • the inorganic filler include titanium oxide, zinc oxide, alumina, silicon oxide and the like.
  • the substrate S may be a single layer of ultrathin glass having a thickness of about 100 ⁇ m manufactured by the float method or the like, or a laminate in which the above-mentioned resin film or aluminum foil is bonded to the ultrathin glass.
  • the dimension in the width direction (short direction) of the substrate S is, for example, about 1 m to 2 m, and the dimension in the longitudinal direction (long direction) is, for example, 10 m or more.
  • this dimension is only an example, and is not limited to this.
  • the dimension in the Y direction of the substrate S may be 50 cm or less, or 2 m or more.
  • the dimension of the substrate S in the X direction may be 10 m or less.
  • the substrate S is preferably formed to have flexibility.
  • flexibility refers to the property of being able to bend the substrate without breaking or breaking even when a force of about its own weight is applied to the substrate.
  • the property of being bent by the force of its own weight is also included in the flexibility.
  • the flexibility varies depending on the material, size, thickness, environment such as temperature, etc. of the substrate. Note that although a single strip-shaped substrate may be used as the substrate S, a plurality of unit substrates may be connected to form a strip.
  • the substrate supply unit 2 feeds and supplies, for example, the substrate S wound in a roll shape to the substrate processing unit 3.
  • the substrate supply unit 2 is provided with a shaft portion around which the substrate S is wound, a rotation driving device which rotates the shaft portion, and the like.
  • a cover provided to cover the substrate S in a rolled state may be provided.
  • the substrate supply unit 2 is not limited to a mechanism for delivering the substrate S wound in a roll, but includes a mechanism (for example, a nip type drive roller) for sequentially delivering the strip-like substrate S in its length direction. I hope there is.
  • the substrate recovery unit 4 rolls up and recovers the substrate S which has passed through the substrate processing apparatus 100, for example, in a roll shape. Similar to the substrate supply unit 2, the substrate recovery unit 4 is provided with a shaft for winding the substrate S, a rotational drive source for rotating the shaft, and a cover for covering the collected substrate S. When the substrate S is cut into a panel shape in the substrate processing unit 3, the substrate S is collected in a state different from the state of being wound in a roll shape, for example, the substrate S is collected in a stacked state. It does not matter.
  • the substrate processing unit 3 transports the substrate S supplied from the substrate supply unit 2 to the substrate recovery unit 4 and uses the compound of the first embodiment for the processing surface Sa of the substrate S in the process of transport.
  • a step of chemically modifying, a step of irradiating light of a predetermined pattern onto the chemically modified treated surface, and a step of arranging a patterning material are performed.
  • the substrate processing unit 3 applies a compound application unit 6 that applies the compound of the first embodiment to the surface to be processed Sa of the substrate S, an exposure unit 7 that emits light, a mask 8, and a pattern material application unit 9.
  • a transport device 20 including a drive roller R for feeding the substrate S under conditions corresponding to the form of processing.
  • the compound application unit 6 and the pattern material application unit 9 are droplet application devices (for example, droplet discharge type application devices, inkjet type application devices, spin coat type application devices, roll coat type application devices, slot coat type application devices, etc. Can be mentioned.
  • Each of these devices is appropriately provided along the transport path of the substrate S, and a flexible display panel or the like can be produced by a so-called roll-to-roll method.
  • the exposure unit 7 is provided, and an apparatus that takes charge of steps before and after that (photosensitive layer forming step, photosensitive layer developing step, etc.) is also provided inline as necessary.
  • a fifth embodiment of the present invention is a pattern forming method for forming a pattern on the surface to be treated of an object, wherein the step of chemically modifying the surface to be treated using the compound of the first embodiment; A step of irradiating the modified surface to be treated with light of a predetermined pattern to form a latent image consisting of a hydrophilic area and a water repellant area; arranging an electroless plating catalyst in the hydrophilic area; And a step of performing the pattern formation method.
  • the wiring pattern can be formed by electroless plating by the following method. This will be described below with reference to FIG.
  • any of general film forming techniques such as physical vapor deposition (PVD), chemical vapor deposition (CVD), liquid phase growth, and the like may be used.
  • the liquid phase growth method is particularly preferable, and as the liquid phase growth method, for example, a coating method (spin coat, dip coat, die coat, spray coat, roll coat, brush coating), printing method (flexo printing, screen printing) etc. It can be mentioned. Alternatively, a SAM film or an LB film may be used.
  • a photomask 13 having an exposure area of a predetermined pattern is prepared.
  • the exposure method is not limited to a method using a photomask, and a method such as projection exposure using an optical system such as a lens or a mirror, a spatial light modulation element, maskless exposure using a laser beam or the like can be used.
  • the photomask 13 may be provided in contact with the compound layer 12 or may be provided in non-contact with the compound layer 12.
  • UV light can be irradiated with the wavelength from which an optimal quantum efficiency is exhibited by the structure of photosensitive group. For example, there is i-line at 365 nm.
  • the exposure dose and the exposure time do not necessarily have to proceed completely with deprotection, and may be such an extent that some amino groups are generated. At that time, in the plating step described later, conditions (such as the activity of the plating bath) can be appropriately changed according to the progress of deprotection.
  • the catalyst for electroless plating is a catalyst for reducing metal ions contained in a plating solution for electroless plating, and examples thereof include silver and palladium.
  • the amino group is exposed on the surface of the hydrophilic region 14, the amino group can capture and reduce the above-mentioned catalyst for electroless plating. Therefore, the electroless plating catalyst is captured only on the hydrophilic region 14 to form the catalyst layer 15. Further, as the electroless plating catalyst, one capable of supporting an amino group can be used.
  • plating layer 16 As shown in FIG. 2E, electroless plating is performed to form a plating layer 16.
  • the material of the plating layer 16 include nickel-phosphorus (NiP) and copper (Cu).
  • the substrate 11 is immersed in an electroless plating bath to reduce metal ions on the catalyst surface, thereby depositing the plating layer 16.
  • the catalyst layer 15 supporting a sufficient amount of catalyst is formed on the surface of the hydrophilic region 14, the plating layer 16 can be selectively deposited only on the hydrophilic region 14. If the reduction is insufficient, it may be immersed in a reducing agent solution such as sodium hypophosphite or sodium borohydride to actively reduce the metal ion on the amine.
  • the plating layer 16 of the electroless plating pattern formed by the above-described method of forming an electroless plating pattern is covered by a known method to form the insulator layer 17 on the compound layer 12.
  • the insulator layer 17 applies the coating solution using, for example, a coating solution in which one or more resins such as an ultraviolet curable acrylic resin, an epoxy resin, an ene / thiol resin, and a silicone resin are dissolved in an organic solvent. It may be formed by By irradiating the coating film with ultraviolet light through a mask provided with an opening corresponding to the region where the insulator layer 17 is to be formed, the insulator layer 17 can be formed into a desired pattern.
  • a coating solution in which one or more resins such as an ultraviolet curable acrylic resin, an epoxy resin, an ene / thiol resin, and a silicone resin are dissolved in an organic solvent. It may be formed by By irradiating the coating film with ultraviolet light through a mask provided with an opening corresponding to the region where
  • the seventh step As shown in FIG. 3B, in the same manner as the first to third steps of the method of forming an electroless plating pattern described above, the hydrophilic region 14 is formed in the portion where the source electrode and the drain electrode are to be formed.
  • the catalyst for electroless plating is supported on the hydrophilic region 14 to form the catalyst layer 15 in the same manner as the fourth and fifth steps of the method for forming an electroless plating pattern described above. Thereafter, electroless plating is performed to form a plating layer 18 (source electrode) and a plating layer 19 (drain electrode).
  • a plating layer 18 source electrode
  • a plating layer 19 drain electrode
  • NiP nickel-phosphorus
  • Cu copper
  • the semiconductor layer 21 is formed between the plating layer 18 (source electrode) and the plating layer 19 (drain electrode).
  • the semiconductor layer 21 is prepared, for example, by forming a solution in which an organic semiconductor material soluble in an organic solvent such as TIPS pentacene (6, 13-bis (triisopropylsilylethynyl) pentacene) is dissolved in the organic solvent, and the plating layer 18 (source It may be formed by applying and drying between the electrode) and the plating layer 19 (drain electrode).
  • the compound layer 12 between the plating layer 18 (source electrode) and the plating layer 19 (drain electrode) may be exposed to be hydrophilic.
  • the solution is suitably applied to the hydrophilized portion, so that the semiconductor layer 21 can be selectively formed easily.
  • the semiconductor layer 21 is formed by adding one or more kinds of insulating polymers such as PS (polystyrene) and PMMA (polymethyl methacrylate) to the solution, and applying and drying a solution containing the insulating polymer. May be Thus, when the semiconductor layer 21 is formed, the insulating polymer is formed in a concentrated manner below the semiconductor layer 21 (on the side of the insulator layer 17). If a polar group such as an amino group is present at the interface between the organic semiconductor and the insulator layer, the transistor characteristics tend to be degraded. However, by providing the organic semiconductor through the above-described insulating polymer, Deterioration of transistor characteristics can be suppressed. As described above, a transistor can be manufactured.
  • the step of removing the resist layer is not necessary.
  • the catalyst reduction ability of the amino group makes it possible to omit the catalyst activation treatment step that is usually required, and enables highly precise patterning while realizing significant cost reduction and time reduction.
  • a dip coating method can be used, it can be used very well even in roll-to-roll processes.
  • the structure of the transistor is not particularly limited and can be selected as appropriate depending on the purpose.
  • FIGS. 2 to 3 has described a method of manufacturing a bottom contact / bottom gate type transistor, the same applies to top contact / bottom gate type, top contact / top gate type, bottom contact / top gate type transistors. It may be manufactured.
  • FIGS. 2-3 demonstrated the method to form all of a gate electrode, a source electrode, and a drain electrode using the compound of 1st Embodiment, only a gate electrode is a 1st embodiment. It may be formed using a compound, or only the source electrode and the drain electrode may be formed using the compound of the first embodiment.
  • Step 1 Synthesis of 1- (4-allyloxy-3-methoxyphenyl) ethanone >> Add 4-hydroxy-3-methoxyacetophenone (5.00 g, 30.1 mmol) to a 300 mL eggplant flask, dissolve in acetone (50 mL), add potassium carbonate (6.24 g, 45.1 mmol), and add 5 at room temperature. After stirring for a minute, allyl bromide (5.46 g, 45.1 mmol) was added and stirred at room temperature for 24 hours.
  • Step 2 Synthesis of 1- (4-allyloxy-5-methoxy-2-nitrophenyl) ethanone
  • the above intermediate compound 11 (497 mg, 2.41 mmol) is added to a 50 mL eggplant flask and dissolved in acetic acid (3 mL), and fuming nitric acid (1 mL, 24.1 mmol) is slowly added dropwise on an ice bath. Stir for 30 minutes.
  • Cold water (10 mL) is added and extraction is performed with ethyl acetate (10 mL ⁇ 3), and the organic layer is washed successively with saturated aqueous sodium hydrogen carbonate solution (10 mL) and saturated brine (10 mL ⁇ 2), dried over anhydrous magnesium sulfate, and filtered. Concentrated.
  • Step 3 Synthesis of 1- (4-allyloxy-5-methoxy-2-nitrophenyl) ethanol
  • the intermediate compound 12 (1.41 g, 5.61 mmol) obtained in the above step
  • tetrahydrofuran (10 mL)
  • methanol 10 mL
  • sodium borohydride (637 mg, 16. 8 mmol) were added in small portions. The mixture was stirred at 0 ° C. for 20 minutes and then at room temperature for 40 minutes.
  • Step 4 Synthesis of 1- (4-allyloxy-5-methoxy-2-nitrophenyl) ethyl N-succinimidyl carbonate >> Intermediate compound 13 (2.50 g, 9.85 mmol) is put in a 200 mL two-necked eggplant flask and dissolved in dry acetonitrile (35 mL), and di (N-succinimidyl) carbonate (6.36 g, 24.8 mmol), triethylamine (4.05 g, 40.1 mmol) was added and stirred at room temperature for 17 hours under a nitrogen atmosphere.
  • Intermediate Compound 14 was synthesized by the above method. Nakayama et al. , Colloids Surf. B, 2010, The intermediate compound 14 synthesized by the method described in 76, 88-97 may be used.
  • Step 6 Synthesis of 1- (5-methoxy-2-nitro-4- (3-tris (trimethylsiloxy) silylpropoxy) phenyl) ethyl 3-trimethoxysilylpropyl carbamate >> Intermediate compound 1a (100 mg, 0.145 mmol) is placed in a 30 mL two-necked eggplant flask and dissolved in dry tetrahydrofuran (1 mL), 3-aminopropyltrimethoxysilane (0.028 mL, 0.161 mmol) is added, and light shielding is performed under a nitrogen atmosphere. The mixture was then stirred at room temperature for 22 hours.
  • ⁇ Surface modification> The thermally oxidized silicon wafer (SiO 2 / Si substrate) was ultrasonically cleaned with methanol for 5 minutes, dried with a nitrogen stream, and then pretreated by UV irradiation with a UV-ozone cleaner for 1 hour. Next, the compound 3a obtained by the above method was dissolved in dry toluene to prepare a 1 mM solution, the above-described pretreated substrate was placed, and immersed at room temperature for 20 hours under a nitrogen atmosphere. The substrate was rinsed with methanol, ultrasonically cleaned with methanol and chloroform for 5 minutes each, and dried with a nitrogen stream (Step 1 below).
  • the modified substrate was irradiated with light having a wavelength of 365 nm and an illuminance of 15 J in the atmosphere via a filter with an extra-high pressure mercury lamp.
  • the substrate was ultrasonically cleaned with chloroform for 5 minutes and dried with a stream of nitrogen (Step 2 below).
  • FIG. 4 shows XPS spectra before and after light irradiation. It is considered that the surface of the substrate was modified because of the large contact angle after modification and the hydrophobicity.
  • XPS showed that after modification, the appearance of a peak derived from a nitro group was observed, and thus modification was possible. It was confirmed that the contact angle decreased after the light irradiation. In addition, it was confirmed from XPS that the peak derived from the nitro group disappeared after light irradiation and the C (carbon) peak decreased, and that the photodegradable group was detached by light irradiation.
  • Step 2 Synthesis of 1- (4,5-diallyloxy-2-nitrophenyl) ethanone >> Intermediate compound 21 (15.2 g, 65.2 mmol) is placed in a 300 mL eggplant flask and dissolved in acetic acid (60 mL), and fuming nitric acid (27.3 mL) is slowly added over 20 minutes on an ice bath to react After confirming the progress by TLC, it was poured into pure water (200 mL).
  • Step 3 Synthesis of 1- (4,5-diallyloxy-2-nitrophenyl) ethanol
  • Intermediate compound 22 (6.08 g, 21.9 mmol) is put in a 300 mL eggplant flask, dissolved in tetrahydrofuran (70 mL), methanol (30 mL) is added, and then sodium borohydride (2.90 g) on an ice bath , 76.7 mmol) was added in small portions and stirred at 0 ° C. for 1.5 hours.
  • Step 4 Synthesis of 1- (4,5-diallyloxy-2-nitrophenyl) ethyl N-succinimidyl carbonate >> Intermediate compound 23 (2.86 g, 10.2 mmol) is put into a 300 mL two-necked eggplant flask and dissolved in dry acetonitrile (35 mL), di (N-succinimidyl) carbonate (4.46 g, 17.4 mmol), triethylamine (3.21 g, 31.7 mmol) was added and stirred at room temperature for 19 hours under a nitrogen atmosphere.
  • Step 6 Synthesis of 1- (2-nitro-4,5-bis (3-tris (trimethylsiloxy) silylpropoxy) phenyl) ethyl 3-trimethoxysilylpropyl carbamate >>
  • Intermediate compound 2a 147 mg, 0.145 mmol
  • 3-aminopropyltrimethoxysilane 78 mg, 0.43 mmol
  • triethylamine 44 mg, 0.43 mmol
  • the mixture was stirred at room temperature for 13 hours under light shielding under a nitrogen atmosphere.
  • Step 1 Synthesis of 1- (4,5-bis (3- (polydimethylsiloxanyl) propoxy) -2-nitrophenyl) ethyl N-succinimidyl carbonate >>
  • Intermediate compound 24 (1.01 g, 2.39 mmol) is put into a 200 mL two-necked eggplant flask and dissolved in dry tetrahydrofuran (30 mL), and polydimethylsiloxane (6.69 g, 6.19 mmol), the Karsted catalyst (10) Drop) was added and stirred at room temperature for 20 hours under nitrogen atmosphere.
  • Step 2 Synthesis of 1- (4,5-bis (3- (polydimethylsilyl) propoxy) -2-nitrophenyl) ethyl 3-trimethoxysilylpropyl carbamate >> Intermediate compound 2c (305 mg, 0.12 mmol) is placed in a 30 mL two-necked eggplant flask, dissolved in dry tetrahydrofuran (12 mL), 3-aminopropyltrimethoxysilane (66 mg, 0.37 mmol), triethylamine (37 mg, 0.37 mmol) In addition, the mixture was stirred at room temperature for 2.5 hours under light shielding under a nitrogen atmosphere.
  • the silicon wafer with thermal oxide film (SiO 2 / Si substrate) is ultrasonically cleaned with pure water, acetone, methanol and chloroform for 5 minutes each, dried with a nitrogen stream, and then irradiated with UV for 1 hour with a UV-ozone cleaner. Pre-treated.
  • the compounds 3b, 4a, 4b and 4c obtained by the above method were each dissolved in dry toluene to prepare a 1 mM (compound 4a, 4b and 4c was 0.1 mM) solution, and the above pretreatment was carried out.
  • the substrate was placed, and immersed in a nitrogen atmosphere at room temperature for 20 hours (the compounds 4a and 4c were for 24 hours).
  • the substrate was ultrasonically cleaned with chloroform for 5 minutes and dried with a stream of nitrogen (Step 1 below).
  • the modified substrate was irradiated with light of wavelength 365 nm and illuminance 15 J (only compound 4 b was 10 J) through a filter with an extra-high pressure mercury lamp in the atmosphere.
  • the substrate was ultrasonically cleaned with chloroform for 5 minutes and dried with a stream of nitrogen (Step 2 below).
  • FIG. 5 shows a substrate modified with compound 3b
  • FIG. 6 shows a substrate modified with compound 4a
  • FIG. 7 shows a substrate modified with compound 4b
  • FIG. 8 shows XPS spectra before and after light irradiation on a substrate modified with compound 4c.
  • the obtained modified substrate was compared before and after light irradiation by static contact angle measurement and XPS. It is considered that the surface of the substrate was modified because the contact angle was large after the modification and the water repellency was shown. Moreover, compound 3b, 4a, 4c has confirmed the appearance of the peak derived from a nitro group after modification from XPS. Although a clear peak derived from a nitro group by XPS was not confirmed for the compound 4b, it is considered that this is because the film thickness is thin and sufficient sensitivity can not be obtained. It was confirmed that the contact angle decreased after the light irradiation.
  • the compounds 3b, 4a and 4c were able to confirm the disappearance of the peak derived from the nitro group after light irradiation. Further, in any of the compounds, the C (carbon) peak decreased, and it was confirmed that the photodegradable group was eliminated by light irradiation.
  • Substrate CONT Control unit Sa: Surface to be treated 2 ... Substrate supply unit 3 ... Substrate treatment unit 4 ... Substrate recovery unit 6 ... Compound application unit 7 .. Exposure unit 8: Mask 9: Pattern material application unit 100: Substrate processing device

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Abstract

La présente invention concerne un composé représenté par la formule générale (1) (dans la formule : X représente un halogène ou un groupe alcoxy ; R1 représente un groupe quelconque choisi parmi des groupes alkyle en C1-5, des groupes représentés par la formule (R2-1), et des groupes représentés par la formule (R2-2) ; R2 représente un groupe représenté par la formule (R2-1) ou (R2-2) ; n0 est un nombre entier supérieur ou égal à 0 ; n1 est un nombre entier dans la plage de 0 à 5 ; et n2 est un nombre naturel dans la plage de 1 à 5).
PCT/JP2018/037023 2017-10-11 2018-10-03 Composé, substrat de formation de motif, agent de couplage photodégradable, procédé de formation de motif et procédé de production de transistor WO2019073878A1 (fr)

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CN201880065020.3A CN111183143B (zh) 2017-10-11 2018-10-03 化合物、图案形成用基板、光分解性偶联剂、图案形成方法和晶体管的制造方法
KR1020207010095A KR20200062227A (ko) 2017-10-11 2018-10-03 화합물, 패턴 형성용 기판, 광 분해성 커플링제, 패턴 형성 방법 및 트랜지스터의 제조 방법
US16/843,232 US11953833B2 (en) 2017-10-11 2020-04-08 Compound, substrate for pattern formation, photodegradable coupling agent, pattern formation method, and transistor production method

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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007248726A (ja) * 2006-03-15 2007-09-27 Asahi Glass Co Ltd 親水性領域と撥水性領域を有する処理基材およびその製造方法
WO2008105503A1 (fr) * 2007-03-01 2008-09-04 Asahi Glass Company, Limited Substrats traités à motifs pourvus de zones hydrofuges et leur procédé de fabrication ; procédé de fabrication d'éléments pourvus de motifs en films de matériau fonctionnel
JP2011149017A (ja) * 2009-12-24 2011-08-04 Dow Corning Toray Co Ltd カルボシロキサンデンドリマー構造を有する共重合体、並びに、それを含む組成物及び化粧料
JP2016157111A (ja) * 2015-02-25 2016-09-01 学校法人神奈川大学 含フッ素組成物、パターン形成用基板、光分解性カップリング剤、パターン形成方法及びトランジスタの製造方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007248726A (ja) * 2006-03-15 2007-09-27 Asahi Glass Co Ltd 親水性領域と撥水性領域を有する処理基材およびその製造方法
WO2008105503A1 (fr) * 2007-03-01 2008-09-04 Asahi Glass Company, Limited Substrats traités à motifs pourvus de zones hydrofuges et leur procédé de fabrication ; procédé de fabrication d'éléments pourvus de motifs en films de matériau fonctionnel
JP2011149017A (ja) * 2009-12-24 2011-08-04 Dow Corning Toray Co Ltd カルボシロキサンデンドリマー構造を有する共重合体、並びに、それを含む組成物及び化粧料
JP2016157111A (ja) * 2015-02-25 2016-09-01 学校法人神奈川大学 含フッ素組成物、パターン形成用基板、光分解性カップリング剤、パターン形成方法及びトランジスタの製造方法

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