WO2019073878A1 - Composé, substrat de formation de motif, agent de couplage photodégradable, procédé de formation de motif et procédé de production de transistor - Google Patents

Composé, substrat de formation de motif, agent de couplage photodégradable, procédé de formation de motif et procédé de production de transistor Download PDF

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Publication number
WO2019073878A1
WO2019073878A1 PCT/JP2018/037023 JP2018037023W WO2019073878A1 WO 2019073878 A1 WO2019073878 A1 WO 2019073878A1 JP 2018037023 W JP2018037023 W JP 2018037023W WO 2019073878 A1 WO2019073878 A1 WO 2019073878A1
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WIPO (PCT)
Prior art keywords
compound
substrate
pattern
pattern forming
group
Prior art date
Application number
PCT/JP2018/037023
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English (en)
Japanese (ja)
Inventor
雄介 川上
山口　和夫
倫子 伊藤
Original Assignee
株式会社ニコン
学校法人神奈川大学
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2018045274A external-priority patent/JP7121505B2/ja
Application filed by 株式会社ニコン, 学校法人神奈川大学 filed Critical 株式会社ニコン
Priority to CN201880065020.3A priority Critical patent/CN111183143B/zh
Priority to KR1020207010095A priority patent/KR20200062227A/ko
Publication of WO2019073878A1 publication Critical patent/WO2019073878A1/fr
Priority to US16/843,232 priority patent/US11953833B2/en

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    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic System
    • C07F7/02—Silicon compounds
    • C07F7/08—Compounds having one or more C—Si linkages
    • C07F7/18—Compounds having one or more C—Si linkages as well as one or more C—O—Si linkages
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/18—Pretreatment of the material to be coated
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/18—Pretreatment of the material to be coated
    • C23C18/20—Pretreatment of the material to be coated of organic surfaces, e.g. resins
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/18—Pretreatment of the material to be coated
    • C23C18/20—Pretreatment of the material to be coated of organic surfaces, e.g. resins
    • C23C18/28—Sensitising or activating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/31—Coating with metals
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
    • H05K3/18—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Thin Film Transistor (AREA)

Abstract

La présente invention concerne un composé représenté par la formule générale (1) (dans la formule : X représente un halogène ou un groupe alcoxy ; R1 représente un groupe quelconque choisi parmi des groupes alkyle en C1-5, des groupes représentés par la formule (R2-1), et des groupes représentés par la formule (R2-2) ; R2 représente un groupe représenté par la formule (R2-1) ou (R2-2) ; n0 est un nombre entier supérieur ou égal à 0 ; n1 est un nombre entier dans la plage de 0 à 5 ; et n2 est un nombre naturel dans la plage de 1 à 5).
PCT/JP2018/037023 2017-10-11 2018-10-03 Composé, substrat de formation de motif, agent de couplage photodégradable, procédé de formation de motif et procédé de production de transistor WO2019073878A1 (fr)

Priority Applications (3)

Application Number Priority Date Filing Date Title
CN201880065020.3A CN111183143B (zh) 2017-10-11 2018-10-03 化合物、图案形成用基板、光分解性偶联剂、图案形成方法和晶体管的制造方法
KR1020207010095A KR20200062227A (ko) 2017-10-11 2018-10-03 화합물, 패턴 형성용 기판, 광 분해성 커플링제, 패턴 형성 방법 및 트랜지스터의 제조 방법
US16/843,232 US11953833B2 (en) 2017-10-11 2020-04-08 Compound, substrate for pattern formation, photodegradable coupling agent, pattern formation method, and transistor production method

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2017-197501 2017-10-11
JP2017197501 2017-10-11
JP2018-045274 2018-03-13
JP2018045274A JP7121505B2 (ja) 2017-10-11 2018-03-13 化合物、パターン形成用基板、光分解性カップリング剤、パターン形成方法及びトランジスタの製造方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US16/843,232 Continuation US11953833B2 (en) 2017-10-11 2020-04-08 Compound, substrate for pattern formation, photodegradable coupling agent, pattern formation method, and transistor production method

Publications (1)

Publication Number Publication Date
WO2019073878A1 true WO2019073878A1 (fr) 2019-04-18

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PCT/JP2018/037023 WO2019073878A1 (fr) 2017-10-11 2018-10-03 Composé, substrat de formation de motif, agent de couplage photodégradable, procédé de formation de motif et procédé de production de transistor

Country Status (1)

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WO (1) WO2019073878A1 (fr)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007248726A (ja) * 2006-03-15 2007-09-27 Asahi Glass Co Ltd 親水性領域と撥水性領域を有する処理基材およびその製造方法
WO2008105503A1 (fr) * 2007-03-01 2008-09-04 Asahi Glass Company, Limited Substrats traités à motifs pourvus de zones hydrofuges et leur procédé de fabrication ; procédé de fabrication d'éléments pourvus de motifs en films de matériau fonctionnel
JP2011149017A (ja) * 2009-12-24 2011-08-04 Dow Corning Toray Co Ltd カルボシロキサンデンドリマー構造を有する共重合体、並びに、それを含む組成物及び化粧料
JP2016157111A (ja) * 2015-02-25 2016-09-01 学校法人神奈川大学 含フッ素組成物、パターン形成用基板、光分解性カップリング剤、パターン形成方法及びトランジスタの製造方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007248726A (ja) * 2006-03-15 2007-09-27 Asahi Glass Co Ltd 親水性領域と撥水性領域を有する処理基材およびその製造方法
WO2008105503A1 (fr) * 2007-03-01 2008-09-04 Asahi Glass Company, Limited Substrats traités à motifs pourvus de zones hydrofuges et leur procédé de fabrication ; procédé de fabrication d'éléments pourvus de motifs en films de matériau fonctionnel
JP2011149017A (ja) * 2009-12-24 2011-08-04 Dow Corning Toray Co Ltd カルボシロキサンデンドリマー構造を有する共重合体、並びに、それを含む組成物及び化粧料
JP2016157111A (ja) * 2015-02-25 2016-09-01 学校法人神奈川大学 含フッ素組成物、パターン形成用基板、光分解性カップリング剤、パターン形成方法及びトランジスタの製造方法

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