WO2019037186A1 - 改善液晶面板显示状态的方法、液晶面板及液晶显示器 - Google Patents

改善液晶面板显示状态的方法、液晶面板及液晶显示器 Download PDF

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WO2019037186A1
WO2019037186A1 PCT/CN2017/102636 CN2017102636W WO2019037186A1 WO 2019037186 A1 WO2019037186 A1 WO 2019037186A1 CN 2017102636 W CN2017102636 W CN 2017102636W WO 2019037186 A1 WO2019037186 A1 WO 2019037186A1
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pixel unit
sub
liquid crystal
terminal
crystal panel
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PCT/CN2017/102636
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English (en)
French (fr)
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邢振周
左清成
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武汉华星光电技术有限公司
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Priority to US15/736,638 priority Critical patent/US10281753B1/en
Publication of WO2019037186A1 publication Critical patent/WO2019037186A1/zh

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    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/34—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source
    • G09G3/36—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source using liquid crystals
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/13306—Circuit arrangements or driving methods for the control of single liquid crystal cells
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136286—Wiring, e.g. gate line, drain line
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/34—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source
    • G09G3/36—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source using liquid crystals
    • G09G3/3611—Control of matrices with row and column drivers
    • G09G3/3674—Details of drivers for scan electrodes
    • G09G3/3677—Details of drivers for scan electrodes suitable for active matrices only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1255—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs integrated with passive devices, e.g. auxiliary capacitors
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136213—Storage capacitors associated with the pixel electrode
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2300/00—Aspects of the constitution of display devices
    • G09G2300/08—Active matrix structure, i.e. with use of active elements, inclusive of non-linear two terminal elements, in the pixels together with light emitting or modulating elements
    • G09G2300/0809—Several active elements per pixel in active matrix panels
    • G09G2300/0819—Several active elements per pixel in active matrix panels used for counteracting undesired variations, e.g. feedback or autozeroing
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2320/00—Control of display operating conditions
    • G09G2320/02—Improving the quality of display appearance
    • G09G2320/0223—Compensation for problems related to R-C delay and attenuation in electrodes of matrix panels, e.g. in gate electrodes or on-substrate video signal electrodes
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2320/00—Control of display operating conditions
    • G09G2320/02—Improving the quality of display appearance
    • G09G2320/0233—Improving the luminance or brightness uniformity across the screen
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits

Definitions

  • the present invention relates to the field of display technologies, and in particular, to a method for improving a display state of a liquid crystal panel, a liquid crystal panel, and a liquid crystal display.
  • CTRs cathode ray tubes
  • LCD liquid crystal display
  • LCD devices are one of the most developed, widely used, and rapidly developing display devices in many flat panel display devices. Since the birth of the first liquid crystal display in 1968, new liquid crystal display technologies have emerged due to the continuous emergence of new materials and new processes. However, only three display technologies such as TN, STN, TFD and TFT have been used so far. Different grades of liquid crystal display occupy a dominant position, TN, STN, TFD and TFT type liquid crystal displays have different levels of viewing angle, color, contrast and animation display quality due to their different driving principles, making them suitable for product applications. There is a clear distinction between range classifications. In terms of the current application range and level of liquid crystal display technology, active matrix driving technology is mainly based on thin film transistor (TFT), which is widely used in mobile terminals and animation and influence processing products.
  • TFT thin film transistor
  • TFT Thin Film Transistor LCD liquid crystal panel in the manufacturing and driving process
  • This phenomenon is mainly caused by the capacitive coupling effect in the LCD panel.
  • the parasitic capacitance Cgs exists in the TFT-LCD panel, so when the TFT is turned off, the charge on the pixel is conserved.
  • Figure 2 shows the law of conservation of charge:
  • the Feed-through phenomenon causes whitening on both sides of the LCD panel because the Gate line signal is affected by the panel RC Loading (capacitance and resistive load) during transmission, which causes transmission delay distortion. Therefore, the A/B/C three-point feed-through voltage ⁇ V _A / ⁇ V _B / ⁇ V _C is different in size, and is expressed as ⁇ V _A > ⁇ V _B > ⁇ V _C , that is, the A/B/C three points are the most The best V COM (common mode voltage) value is Best V COM_A ⁇ Best V COM_B ⁇ Best V COM_C , and since the panel is interleaved, the overall V COM setting of the panel is close to Best V COM_C , which eventually leads to A.
  • V COM common mode voltage
  • the point is brighter than B, and point B is lit than C.
  • the brightness of point A is 9 nits
  • the brightness of point B is 7 nits
  • the brightness of point C is 6 nits; as shown in Fig. 1, at this time, the brightness of two lines of Gate line 1 and Gate line 2 is taken as an example, and the brightness of point A is about (9+6).
  • the technical problem to be solved by the present invention is to provide a method for improving the display state of a liquid crystal panel, a liquid crystal panel, and a liquid crystal display to solve the problem that whitening on both sides of the liquid crystal panel is easy.
  • the present invention provides a method for improving the display state of a liquid crystal panel, the method comprising: acquiring an array substrate of the liquid crystal panel, a gate signal line, a remote sub-pixel unit, an intermediate sub-pixel unit, and a near The storage capacitor value of the terminal pixel unit; adjusting the storage capacitor value of the remote sub-pixel unit and the near-terminal pixel unit, so that the voltage drop caused by the capacitive coupling effect of the remote sub-pixel unit and the near-terminal pixel unit is caused by the capacitive coupling effect of the intermediate sub-pixel unit
  • the pressure drop is the same; adjusted according to the above
  • the storage capacitor values of the remote sub-pixel unit and the near-terminal pixel unit are correspondingly adjusted to the storage capacitor values of the far-end sub-pixel unit and the near-terminal pixel unit on the other gate signal lines.
  • the specific steps include: the storage capacitance of the remote sub-pixel unit is greater than the storage capacitance of the intermediate sub-pixel unit, and the storage capacitance of the intermediate sub-pixel unit is greater than the storage capacitance of the near-terminal pixel unit, so that the remote sub-pixel unit and The voltage drop caused by the capacitive coupling effect of the near-terminal pixel unit is the same as the voltage drop caused by the capacitive coupling effect of the intermediate sub-pixel unit.
  • the adjusting the storage capacitor value of the far-end sub-pixel unit and the near-terminal pixel unit so that the voltage drop caused by the capacitive coupling effect of the far-end sub-pixel unit and the near-terminal pixel unit is the same as the voltage drop generated by the capacitive coupling effect of the intermediate sub-pixel unit
  • the specific steps include: a dielectric constant of the storage capacitor of the remote sub-pixel unit is smaller than a dielectric constant of the intermediate sub-pixel unit, and a dielectric constant of the intermediate sub-pixel unit is smaller than a dielectric constant of the near-terminal pixel unit.
  • the voltage drop caused by the capacitive coupling effect of the far-end sub-pixel unit and the near-terminal pixel unit is the same as the voltage drop generated by the capacitive coupling effect of the intermediate sub-pixel unit.
  • the remote sub-pixel unit, the intermediate sub-pixel unit, and the near-terminal pixel unit are divided into a remote sub-pixel unit region, an intermediate sub-pixel unit region, and a near-terminal pixel unit region along the same gate signal line.
  • the step of acquiring the storage capacitor values of the remote sub-pixel unit, the intermediate sub-pixel unit, and the near-terminal pixel unit on the gate signal line of the array substrate of the liquid crystal panel specifically includes: acquiring the array substrate of the liquid crystal panel The average storage capacitance value of the far-end sub-pixel unit area, the intermediate sub-pixel unit area, and the near-terminal pixel unit area on the gate signal line.
  • the method for improving the display state of the liquid crystal panel further comprises reducing the number of OP amplifiers in the output buffer stage on both sides of the source line of the liquid crystal panel, so that the brightness on both sides of the liquid crystal panel is consistent with the brightness in the middle.
  • the method for improving the display state of the liquid crystal panel further comprises: increasing an area of the OP amplifier in the output buffer stage of the middle portion of the source line, so that the brightness on both sides of the liquid crystal panel is consistent with the brightness in the middle.
  • the method for improving the display state of the liquid crystal panel further comprises increasing the width of the black matrix film covering, so that the brightness of the two sides of the liquid crystal panel is consistent with the brightness in the middle.
  • the present invention provides a liquid crystal panel comprising: a remote sub-pixel unit, wherein the remote sub-pixel unit is provided with a storage capacitor; an intermediate sub-pixel unit, wherein the intermediate sub-pixel unit is provided with a storage capacitor; a near-terminal pixel unit, wherein the near-terminal pixel unit is provided with a storage capacitor; a voltage drop generated by the capacitive coupling effect of the far-end sub-pixel unit and the near-terminal pixel unit is in the middle The sub-pixel unit capacitive coupling effect produces the same voltage drop.
  • the present invention also provides a liquid crystal display comprising a liquid crystal panel which is produced by any of the methods described above for improving the display state of the liquid crystal panel.
  • the number of OP amplifiers in the output buffer stage on both sides of the liquid crystal panel source line is smaller than the number of OP amplifiers in the intermediate output buffer stage.
  • the area of the OP amplifier in the output buffer stage of the middle portion of the source line is larger than the area of the OP amplifier in the output buffer stage of both sides.
  • the invention has the beneficial effects that, different from the prior art, the present invention generates a voltage drop caused by a capacitive coupling effect between a remote sub-pixel unit and a near-terminal pixel unit and a capacitive coupling effect of the intermediate sub-pixel unit by changing a storage capacitor of the sub-pixel unit.
  • the pressure drop is the same, which effectively improves the uneven brightness of the LCD panel frame or the whitening of the two sides of the module, providing a better experience for the user.
  • FIG. 1 is a schematic diagram of a parasitic capacitance Cgs in a liquid crystal panel in the prior art
  • FIG. 2 is a schematic diagram of a feed-through voltage in a liquid crystal panel in the prior art
  • Figure 3 is a schematic diagram of the feed-through phenomenon at different points on the gate signal line
  • FIG. 4 is a schematic flow chart of an embodiment of a method for improving display state of a liquid crystal panel according to the present invention
  • FIG. 5 is a schematic diagram of a storage capacitor as a common pole structure according to an embodiment of the present invention.
  • FIG. 6 is a schematic diagram of a storage capacitor as a gate level architecture according to an embodiment of the invention.
  • FIG. 7 is an equivalent circuit diagram of an embodiment of a liquid crystal panel of the present invention.
  • FIG. 8 is a schematic diagram of processing a video signal by a prior art source driver
  • FIG. 9 is a schematic structural view of a source driver according to an embodiment of the present invention.
  • FIG. 10 is a schematic structural view of a source driver according to another embodiment of the present invention.
  • FIG. 11 is a schematic view showing the structure of a black matrix according to an embodiment of the present invention.
  • Figure 12 is a schematic view showing the electrical connection of an embodiment of the liquid crystal panel of the present invention.
  • Figure 13 is a schematic view showing the structure of an embodiment of a liquid crystal panel of the present invention.
  • FIG. 4 is a schematic flowchart of a method for improving a liquid crystal panel according to an embodiment of the present invention.
  • a method for improving a liquid crystal panel according to the embodiment includes the following steps:
  • the far-end sub-pixel unit, the intermediate sub-pixel unit, and the near-terminal pixel unit are divided into a far-end sub-pixel unit area, an intermediate sub-pixel unit area, and a near-terminal pixel unit area along the same gate signal line.
  • Obtaining the storage capacitor value of the remote sub-pixel unit, the intermediate sub-pixel unit, and the near-terminal pixel unit of the array substrate of the liquid crystal panel on the grid signal line comprises: acquiring the remote sub-pixel of the array signal of the liquid crystal panel and the gate signal line The average storage capacitance value of the cell region, the intermediate sub-pixel unit region, and the near-terminal pixel cell region.
  • the liquid crystal panel is an active matrix driven liquid crystal panel. Specifically, each sub-pixel unit controls the light transmittance by one transistor, and connects the same gate signal line sub-pixel unit. After being energized, the sub-pixel unit changes to form a specific color, and an image is formed according to the screen image information.
  • the sub-pixel storage capacitor is a capacitor that is connected in parallel to the pixel in the active matrix display to maintain a signal voltage of each pixel; and the capacitance refers to a capacitance characteristic of the inductor, the resistor, the chip pin, etc., which is expressed at a high frequency. .
  • the step of adjusting the storage capacitor values of the remote sub-pixel unit and the near-terminal pixel unit specifically means that the storage capacitance of the remote sub-pixel unit is greater than the storage capacitance of the intermediate sub-pixel unit, and the storage capacitance of the intermediate sub-pixel unit is greater than
  • the storage capacitance of the near-terminal pixel unit causes the voltage drop caused by the capacitive coupling effect of the far-end sub-pixel unit and the near-terminal pixel unit to be the same as the voltage drop generated by the capacitive coupling effect of the intermediate sub-pixel unit.
  • the capacitive coupling effect is due to the change of other voltages on the panel, which affects the correctness of the display electrode voltage, and the signal distortion from the near end to the far end is more and more serious, but since the panel drive is alternately driven by the gate left and right, Therefore, the brightness of the sub-pixel units on both sides is uneven.
  • the storage capacitor values of the obtained far-end sub-pixel unit, intermediate sub-pixel unit, and near-terminal pixel unit are the same in the initial state. Therefore, when a certain gate signal line is a remote sub-pixel After the storage capacitor values of the unit, the intermediate sub-pixel unit, and the near-terminal pixel unit are adjusted, the storage capacitor values of the remote sub-pixel unit, the intermediate sub-pixel unit, and the near-terminal pixel unit on the other gate signal lines can be adjusted correspondingly.
  • the storage capacitor is a common-mode 1 (Cs on common) architecture, and an additional common line 3 is added to the common pole 1 architecture. Since the storage capacitor is similar to the general capacitor, the storage capacitor of the remote sub-pixel unit on the same gate signal line 4, the storage capacitor of the intermediate sub-pixel unit, and the storage capacitor of the near-terminal pixel unit are directly obtained, and then the other gate signal lines are adjusted correspondingly.
  • the dielectric constant of the storage capacitor of the remote sub-pixel unit and the near-terminal pixel unit increases the dielectric constant of the near-end storage capacitor and reduces the dielectric constant of the remote storage capacitor.
  • the storage capacitor values of the far-end sub-pixel unit and the near-terminal pixel unit are adjusted such that the voltage drop caused by the capacitive coupling effect of the far-end sub-pixel unit and the near-terminal pixel unit is the same as the voltage drop generated by the capacitive coupling effect of the intermediate sub-pixel unit.
  • the capacitive coupling effect of the pixel unit and the near-terminal pixel unit produces the same voltage drop.
  • the storage capacitor is a gate 2 (Cs on gate) architecture. Its storage capacitor 6 is affected by the gate signal line 7 and the display electrode. The stored power will fluctuate during the process of displaying the image, but the fluctuation time comparison and the display image update time are shorter, so only the acquisition is required. The average value of the storage capacitor over a period of time increases the dielectric constant of the near-end storage capacitor and reduces the dielectric constant of the remote storage capacitor.
  • the storage capacitor values of the far-end sub-pixel unit and the near-terminal pixel unit are adjusted such that the voltage drop caused by the capacitive coupling effect of the far-end sub-pixel unit and the near-terminal pixel unit is the same as the voltage drop generated by the capacitive coupling effect of the intermediate sub-pixel unit.
  • the capacitive coupling effect of the pixel unit and the near-terminal pixel unit produces the same voltage drop.
  • FIG. 7 is an equivalent circuit diagram of a liquid crystal panel according to an embodiment of the present invention, including: a plurality of sub-pixel units 501, and gate signal lines 503, common electrode lines, and each column of sub-pixel units corresponding to each row of sub-pixel units. Corresponding data line 504.
  • the gate signal line 503 is drivingly connected to the gate, and the data line 504 is externally driven to be driven.
  • the capacitance in parallel with each of the TFTs and Clc (filter capacitor) and Cst (storage capacitor) in this embodiment represents a display point 501.
  • one pixel 502 is composed of three RGB three primary color sub-pixel units. Take a 1080*900 resolution TFT-LCD as an example, a total of 1080*900*3 points are required. 501 combination.
  • the gate driver sends out the waveform data signal, and the TFTs of each row are turned on, and the display points of the same row are charged to the respective required voltages according to the waveform data signals through the source driver to display different gray scales.
  • the gate driver turns off the voltage, then turns on the gate driver of the next row to continue the voltage in this order.
  • the display point of the last row is filled, the charging is resumed from the first row. Repeatedly.
  • the liquid crystal panel includes a remote sub-pixel unit c, the remote sub-pixel unit c is provided with a storage capacitor; the intermediate sub-pixel unit b, the intermediate sub-pixel unit b A storage capacitor is provided; the near-terminal pixel unit a and the near-terminal pixel unit a are provided with a storage capacitor.
  • the storage capacitor values of the remote sub-pixel unit c, the intermediate sub-pixel unit b, and the near-terminal pixel unit a on the same gate signal line on the array substrate of the liquid crystal panel are obtained; wherein the first 1 to 360 column sub-pixel units are near In the terminal pixel region, the 361 to 720 column sub-pixel units are intermediate sub-pixel regions, and the 721 to 1080 column sub-pixel units are remote sub-pixel regions. It is assumed that one column of sub-pixel units on the same gate signal line is selected as the near-end pixel unit, and the 1080-column sub-pixel unit is the far-end sub-pixel unit, and the selected near end and the midpoint of the far end are selected as the intermediate sub-pixel unit to be selected.
  • the other near-terminal pixel unit a and the far-end sub-pixel unit c on the same gate signal line are also adjusted according to the respective intermediate sub-pixel units, that is, according to 540 columns.
  • the storage capacitance values of the far-end sub-pixel unit c and the near-terminal pixel unit a on the other gate signal lines are correspondingly adjusted.
  • the voltage drop caused by the capacitive coupling effect of the remote sub-pixel unit c and the near-terminal pixel unit b is the same as the voltage drop caused by the capacitive coupling effect of the intermediate sub-pixel unit a.
  • the acquired storage capacitor values of the remote sub-pixel unit, the intermediate sub-pixel unit, and the near-terminal pixel unit are the same in the initial state. Therefore, the step of adjusting the storage capacitor value of the remote sub-pixel unit and the near-terminal pixel unit specifically refers to: replacing the storage capacitor of the remote sub-pixel unit with a capacitor having a larger storage capacitor value, and replacing the storage capacitor of the near-terminal pixel unit with the storage capacitor.
  • a capacitor with a smaller capacitance value causes the voltage drop caused by the capacitive coupling effect of the far-end sub-pixel unit and the near-terminal pixel unit to be the same as the voltage drop caused by the capacitive coupling effect of the intermediate sub-pixel unit.
  • the storage capacitor value of the storage capacitor on the pixel unit is greater than the storage capacitor value of the storage capacitor on the intermediate sub-pixel unit, and the storage capacitor value of the storage capacitor on the intermediate sub-pixel unit is greater than the storage capacitor value of the storage capacitor on the near-terminal pixel unit.
  • the sub-pixel unit on the gate signal may be equally divided into three regions, which are respectively a remote sub-pixel unit region and an intermediate sub-pixel.
  • the voltage drop caused by the capacitive coupling effect of the far-end sub-pixel unit region and the near-terminal pixel unit region is the same as the voltage drop caused by the capacitive coupling effect of the intermediate sub-pixel unit region.
  • the present invention improves the voltage drop caused by the capacitive coupling effect of the far-end sub-pixel unit and the near-terminal pixel unit by changing the storage capacitance of the sub-pixel unit, and effectively reduces the voltage drop caused by the capacitive coupling effect of the intermediate sub-pixel unit.
  • the LCD panel frame is uneven in brightness or white on both sides of the module, providing users with a better experience LCD panel.
  • the liquid crystal panel display effect can also be adjusted by changing the driving force of the source driver of the liquid crystal panel or the gray scale voltage of the source line input.
  • the basic flow of processing the video signal by the source driver is as follows. First, the video data is sequentially buffered by the bidirectional shift register 15, and then input to the potential converter 14 to boost the voltage of the video signal. The voltage turns on the corresponding gate of the D/A converter 13; the ⁇ reference voltages Vr1 VVr5 and Vr6 to Vr15 generated in the output buffer stage 12 are input to the output buffer stage via the FET, and finally the gate driver is matched. The signal delivers the source signal to the data line in the panel and is ultimately displayed on the LCD panel.
  • the gray scale voltage input from the source lines on both sides of the liquid crystal panel is lowered, so that the brightness on both sides of the liquid crystal panel is consistent with the brightness in the middle.
  • the number of OP amplifiers in the output line buffer stage 16 of both sides is reduced, and the driving capability of both sides of the liquid crystal panel is reduced, so that the brightness of both sides of the liquid crystal panel is lowered, and the uniformity of display is achieved.
  • the driving capability of the middle portion of the panel is improved to achieve uniform display.
  • the area of the OP amplifier in the output buffer stage 17 on both sides of the source line can also be reduced to reduce the driving capability on both sides of the panel to achieve uniform display.
  • the black matrix 18 is located at the bottom of the sub-pixel unit 19 for preventing light leakage between the sub-pixels.
  • the black matrix 18 has a narrow width, the sub-pixel units 19 interact, the liquid crystal panel displays an abnormality, and the background light of the edge region directly passes through the sub-pixel unit 19 region, and the white areas on both sides of the liquid crystal panel are found, and the corresponding black color is increased.
  • the width of the matrix 18 is such that the black matrix 18 covers the edge regions of the sub-pixel unit 19.
  • the liquid crystal panel is an active matrix driven liquid crystal panel.
  • liquid crystal panels described above can be applied to a device having a display function such as a liquid crystal display, a mobile phone, or a smart watch.
  • the liquid crystal panel includes a data input circuit 701, a data processing circuit 702, a driving circuit 703, and a display circuit 704.
  • the input circuit 701 and the driving circuit 703 are shown.
  • the display circuit 704 is connected to the data processing circuit 702, and the display circuit 704 is further connected to the driving circuit 703.
  • the data input circuit 701 is configured to acquire image feature data to be displayed, and convert the image data.
  • the data processing 702 circuit is configured to convert the input electrical signal into respective sub-pixel corresponding gate signals; and acquire the liquid crystal panel output image feature data according to the gate signal and the input electrical signal And outputting an image according to the feature data and the driving current of the display panel.
  • FIG. 13 is a schematic structural diagram of an embodiment of a liquid crystal panel according to the present invention, which mainly includes a driving circuit 801, a liquid crystal panel 811, a backlight 816, and a high voltage board 817.
  • the driving circuit 801 includes: a column driver.
  • the liquid crystal panel 811 includes: a front polarizing plate front glass plate 806, an RGB color filter film 807, a liquid crystal layer 808, a TFT matrix 809, and a rear polarizing plate front glass.
  • the backlight 816 includes a backlight 812, a prism and a diffusion surface 813, a light guiding layer 814, and a mirror 815.
  • the main board circuit outside the display panel is connected to the liquid crystal panel through a cable.
  • the display panel is further provided with a PCB board 817, and a liquid crystal panel driving circuit 801 is disposed thereon, and is mainly provided with a video signal power supply 805, a row driving IC 804, a column driving data IC, etc., as shown in FIG.
  • the data and clock signals from the main board circuit are separated by the line driving signal and the column driving signal after being processed by the screen display IC circuit, and then sent to the row and column electrodes of the liquid crystal display respectively to drive the liquid crystal display to display an image.
  • the present invention improves the voltage drop caused by the capacitive coupling effect of the far-end sub-pixel unit and the near-terminal pixel unit by changing the storage capacitance of the sub-pixel unit, and effectively reduces the voltage drop caused by the capacitive coupling effect of the intermediate sub-pixel unit.
  • the LCD panel frame is uneven in brightness or white on both sides of the module, providing users with a better experience.

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Abstract

一种改善液晶面板显示状态的方法，包括：获取液晶面板的阵列基板一栅极信号线上远端子像素单元、中间子像素单元、近端子像素单元的存储电容值（401）；调整远端子像素单元和近端子像素单元的储存电容值，使远端子像素单元、近端子像素单元电容耦合效应产生的压降与中间子像素单元电容耦合效应产生的压降相同（402）；根据已调整的远端子像素单元和近端子像素单元的存储电容值，对应调整其它栅极信号线上远端子像素单元和近端子像素单元的存储电容值（403）。改善了液晶面板框亮度不均或模组两侧发白现象，从而提升液晶面板的显示品质。

Description

改善液晶面板显示状态的方法、液晶面板及液晶显示器 【技术领域】
本发明涉及显示技术领域，尤其涉及一种改善液晶面板显示状态的方法、液晶面板及液晶显示器。
【背景技术】
信息社会中随着信心量的增加和信息交换的频繁，人们会更多、更广泛、更经常地面对各种显示装置。也就是说，显示器以及显示技术已经成为了人们生活中不可缺少的一部分。在20世纪，图像显示器中，阴极射线管(CRT)占据了绝对统治的地位，随着显示技术的发展，CRT显示器因为体积过大以及能耗电量消耗巨大等因素，无法满足用户的需求。而液晶显示(Liquid Crystal Display，LCD)技术的发展正好切合目前信息产品的潮流。
LCD器件是众多平面显示器件中发展最成熟、应用最广泛、并且还在迅速发展着的一种显示器件。自1968年第一块液晶显示器诞生后，由于不断地有新材料、新工艺的出现，新的液晶显示技术也在不断涌现，但目前为止任只有TN、STN、TFD和TFT三种显示技术在不同档次的液晶显示中占据着统治地位、TN、STN、TFD及TFT型液晶显示器因其驱动原理不同，在视角、彩色、对比及动画显示品质上有高低层次之差别，使其在产品的应用范围分类有明显区别。以目前液晶显示技术应用范围和层次而言，主动矩阵驱动技术是以薄膜式晶体管型(TFT)为主流，多应用于移动终端以及动画、影响处理产品。
一般来说，TFT(Thin Film Transistor)LCD液晶面板在制造及驱动过程中，若存在框胶污染、液晶进水汽或模组驱动设计存在缺陷等问题，均会导致框亮度不均(Mura)或模组两侧发白的现象产生。这种现象主要是由于LCD液晶面板中电容耦合效应现(Feed-through)引起的，如图1所示，TFT-LCD液晶面板中存在寄生电容Cgs，故当TFT关闭时，像素上电荷守恒如图2所示，电荷守恒定律：
当Vg＝Vgh时，
Q＝(Vgh-Vs)*Cgs+(Vcom-Vs)*(Cst+Clc)             (1)
当Vg＝Vgl时，
Q＝(Vgh-Vs″)*Cgs+(Vcom-Vs″)*(Cst+Clc)           (2)
ΔV＝Vs-Vs″，得Feed-through电压。
Figure PCTCN2017102636-appb-000001
(其中，Vg——栅极信号线电压，Vgh和Vgl——子像素栅极信号输入线电压，Vs和Vs″——漏极电压，Vcom——共模电压，Cst——存储电容，Clc——LC滤波输出电压；)
如图3所示，Feed-through现象导致液晶面板两侧发白是由于Gate line(栅极信号线)信号在传输过程中受到面板RC Loading(电容和电阻负载)影响，会产生传输延迟失真现象，从而导致A/B/C三点Feed-through(电容耦合效应)电压ΔV_A/ΔV_B/ΔV_C大小不同，表现为ΔV_A＞ΔV_B＞ΔV_C，即A/B/C三点最佳VCOM(共模电压)值表现为Best VCOM_A＜Best VCOM_B＜Best VCOM_C，且由于面板为交错式驱动，故面板整体最佳VCOM设定值接近于Best VCOM_C，最终导致A点比B点亮，B点比C点亮。假设A点亮度为9nits，则B点亮度为7nits，C点亮度为6nits；如图1所示，此时以Gate line1和Gate line2两行亮度为例，则A点亮度约为(9+6＝15nits)，B点亮度约为(7+7＝14nits)，C点亮度约为(6+9＝15nits)(nits——发光强度，单位：cd/m2)，即面板两侧边缘会出现发白现象，具体是由于同一条栅极信号线由于RC电路的影响，从近端到远端信号失真会越来越严重，即子像素单元亮度从近端到远端也会越来越暗，由于面板驱动为栅极左右交替驱动，故表现为两侧亮度较亮的结果(两侧发白)。
【发明内容】
本发明主要解决的技术问题是，提供一种改善液晶面板显示状态的方法、液晶面板及液晶显示器，以解决液晶面板两侧容易产生发白的问题。
为解决上述技术问题，本发明提供了一种改善液晶面板显示状态的方法，所述方法包括：获取所述液晶面板的阵列基板一栅极信号线上远端子像素单元、中间子像素单元、近端子像素单元的存储电容值；调整远端子像素单元和近端子像素单元的储存电容值，使远端子像素单元、近端子像素单元电容耦合效应产生的压降与中间子像素单元电容耦合效应产生的压降相同；根据上述已调整 的远端子像素单元和近端子像素单元的存储电容值，对应调整其它栅极信号线上远端子像素单元和近端子像素单元的存储电容值。
其中，所述调整远端子像素单元和近端子像素单元的储存电容值，使远端子像素单元和近端子像素单元电容耦合效应产生的压降与中间子像素单元电容耦合效应产生的压降相同的具体步骤包括：所述远端子像素单元的储存电容大于所述中间子像素单元的储存电容，所述中间子像素单元的储存电容大于所述近端子像素单元的储存电容，使远端子像素单元和近端子像素单元电容耦合效应产生的压降与中间子像素单元电容耦合效应产生的压降相同。
其中，所述调整远端子像素单元和近端子像素单元的储存电容值，使远端子像素单元和近端子像素单元电容耦合效应产生的压降与中间子像素单元电容耦合效应产生的压降相同的具体步骤包括：所述远端子像素单元的存储电容的介电常数小于所述中间子像素单元的介电常数，所述中间子像素单元的介电常数小于所述近端子像素单元的介电常数，使远端子像素单元和近端子像素单元电容耦合效应产生的压降与中间子像素单元电容耦合效应产生的压降相同。
其中，所述远端子像素单元、中间子像素单元、近端子像素单元沿同一栅极信号线划分为远端子像素单元区域、中间子像素单元区域和近端子像素单元区域。
其中，所述获取所述液晶面板的阵列基板一栅极信号线上远端子像素单元、中间子像素单元、近端子像素单元的存储电容值的步骤具体包括：获取所述液晶面板的阵列基板一栅极信号线上远端子像素单元区域、中间子像素单元区域、近端子像素单元区域的平均存储电容值。
进一步的，改善液晶面板显示状态的方法还包括减小液晶面板源线两侧输出缓冲级中OP放大器数目，使液晶面板两侧的亮度与中间的亮度一致。
可选的，改善液晶面板显示状态的方法还包括增加源线中间部分输出缓冲级中OP放大器的面积，使液晶面板两侧的亮度与中间的亮度一致。
可选的，改善液晶面板显示状态的方法还包括增加黑色矩阵薄膜覆盖宽度，使液晶面板两侧的亮度与中间的亮度一致。
为解决上述技术问题，本发明提供一种液晶面板，包括：远端子像素单元，所述远端子像素单元上设有存储电容；中间子像素单元，所述中间子像素单元上设有存储电容；近端子像素单元，所述近端子像素单元上设有存储电容；所述远端子像素单元、所述近端子像素单元电容耦合效应产生的压降与所述中间 子像素单元电容耦合效应产生的压降相同。
为解决上述技术问题，本发明还提供一种液晶显示器，包括液晶面板，所述液晶面板使用上述任一所述改善液晶面板显示状态的方法所制得。
其中，所述液晶面板源线两侧输出缓冲级中OP放大器的数目比中间输出缓冲级中的OP放大器的数目少。
其中，源线中间部分输出缓冲级中OP放大器的面积比两侧输出缓冲级中OP放大器的面积大。
本发明的有益效果是：区别于现有技术，本发明通过改变子像素单元的存储电容，使远端子像素单元和近端子像素单元电容耦合效应产生的压降与中间子像素单元电容耦合效应产生的压降相同，有效改善了液晶面板框亮度不均或模组两侧发白现象，为用户提供更优质的体验。
【附图说明】
图1是现有技术中液晶面板中寄生电容Cgs示意图；
图2是现有技术中液晶面板中Feed-through电压示意图；
图3栅极信号线上不同点Feed-through现象示意图；
图4是本发明一种改善液晶面板显示状态的方法一实施例的流程示意图；
图5是本发明一实施例存储电容为公共极架构示意图；
图6是本发明一实施例存储电容为门级架构示意图；
图7是本发明液晶面板一实施例等效电路图；
图8是现有技术源极驱动器处理视频信号示意图；
图9是本发明一实施例源极驱动器结构示意图；
图10是本发明另一实施例源极驱动器结构示意图；
图11是本发明一实施例黑色矩阵结构示意图；
图12是本发明液晶面板一实施例电连接示意图；
图13是本发明液晶面板一实施例的结构示意图。
【具体实施方式】
下面结合附图和实施例对本发明进行详细说明。
请参阅图4，图4是本发明一种改善液晶面板的方法一实施例的流程示意图，本实施例的一种改善液晶面板的方法包括如下步骤：
401：获取所述液晶面板的阵列基板一栅极信号线上远端子像素单元、中间子像素单元、近端子像素单元的存储电容值；
在本实施例中，远端子像素单元、中间子像素单元、近端子像素单元沿同一栅极信号线划分为远端子像素单元区域、中间子像素单元区域和近端子像素单元区域。获取液晶面板的阵列基板一栅极信号线上远端子像素单元、中间子像素单元、近端子像素单元的存储电容值的步骤具体包括：获取液晶面板的阵列基板一栅极信号线上远端子像素单元区域、中间子像素单元区域、近端子像素单元区域的平均存储电容值。
其中，所述液晶面板为主动矩阵驱动式液晶面板。具体地，每个子像素单元通过一个晶体管控制光线穿透率，并且将同一栅极信号线子像素单元连接起来，通电之后，子像素单元发生变化，构成特定的颜色，根据屏幕图像信息形成图像。
其中，所述子像素存储电容为有源矩阵显示中并联于像素以维持每个像素信号电压的电容器；此外所述电容指电感、电阻、芯片引脚等在高频情况下表现出来的电容特性。
402：调整远端子像素单元和近端子像素单元的储存电容值，使远端子像素单元和近端子像素单元电容耦合效应产生的压降与中间子像素单元电容耦合效应产生的压降相同。
在一个具体的实施例中，初始状态下，获取的远端子像素单元、中间子像素单元、近端子像素单元的存储电容值相同。因此，调整远端子像素单元和近端子像素单元的储存电容值的步骤具体是指：远端子像素单元的储存电容大于所述中间子像素单元的储存电容，所述中间子像素单元的储存电容大于所述近端子像素单元的储存电容，使远端子像素单元和近端子像素单元电容耦合效应产生的压降与中间子像素单元电容耦合效应产生的压降相同。
其中，所述电容耦合效应是由于面板上其它电压的变化，影响到显示电极电压的正确性，从近端到远端信号失真会越来越严重，但是由于面板驱动为栅极左右交替驱动，故两侧子像素单元亮度不均。
403：根据上述已调整的远端子像素单元和近端子像素单元的存储电容值，对应调整其它栅极信号线上远端子像素单元和近端子像素单元的存储电容值。
本实施例中，由于初始状态下，获取的远端子像素单元、中间子像素单元、近端子像素单元的存储电容值相同。因此，当某一根栅极信号线上远端子像素 单元、中间子像素单元、近端子像素单元的存储电容值调整完毕后，其他栅极信号线上远端子像素单元、中间子像素单元、近端子像素单元的存储电容值可对应调整。
在一个具体的实施例中，如图5所示，存储电容为公共极1(Cs on common)架构，公共极1架构中增加了一条额外的公用线3。由于存储电容与一般电容类似，直接获取同一栅极信号线4上远端子像素单元的存储电容、中间子像素单元的存储电容和近端子像素单元的存储电容，再对应调整其它栅极信号线上远端子像素单元和近端子像素单元的存储电容的介电常数，增大近端存储电容的介电常数，减小远端存储电容的介电常数。即，调整远端子像素单元和近端子像素单元的储存电容值，使远端子像素单元和近端子像素单元电容耦合效应产生的压降与中间子像素单元电容耦合效应产生的压降相同。根据上述已调整的远端子像素单元和近端子像素单元的介电常数，对应调整其它栅极信号线上远端子像素单元和近端子像素单元的介电常数，使其他栅极信号线上远端子像素单元和近端子像素单元电容耦合效应产生的压降相同。
在另一个具体的实施例中，如图6所示，存储电容为门极2(Cs on gate)架构。它的储存电容6受到栅极信号线7(gate line)与显示电极的影响，在显示图像的过程中存储的电量会产生波动，但波动时间对比与显示图像更新时间较短，所以只需要获取存储电容一段时间内的平均值，通过这个平均值大小，增大近端存储电容的介电常数，减小远端存储电容的介电常数。即，调整远端子像素单元和近端子像素单元的储存电容值，使远端子像素单元和近端子像素单元电容耦合效应产生的压降与中间子像素单元电容耦合效应产生的压降相同。根据上述已调整的远端子像素单元和近端子像素单元的介电常数，对应调整其它栅极信号线上远端子像素单元和近端子像素单元的介电常数，使其他栅极信号线上远端子像素单元和近端子像素单元电容耦合效应产生的压降相同。
以下，以一个具体的液晶面板详细说明上述方法的具体应用。参阅图7，图7是本发明一实施例液晶面板等效电路图，包括：多个子像素单元501，以及与每行子像素单元对应的栅极信号线503、公共电极线，与每列子像素单元对应的数据线504。所述栅极信号线503跟所述栅极驱动连接，所述数据线504外接源极驱动。本实施例中每一个TFT与Clc(滤波电容)以及Cst(存储电容)所并联的电容代表一个显示点501。其中，一个像素502由三个RGB三原色子像素单元构成。以一个1080*900分辨率的TFT-LCD为例，共需要1080*900*3个点 501组合而成。
具体地，栅极驱动器送出波形数据信号，每一行的TFT打开，同一行的显示点根据波形数据信号通过源极驱动器充电到各自所需的电压，显示不同的灰阶。当这一行充好电时，栅极驱动器将电压关闭，然后打开下一行的栅极驱动器将电压如此依序下去，当充好了最后一行的显示点，便重新从第一行再开始充电，如此反复。
在一个具体实施例中，FHD(1080RGB*1920)解析度为例，液晶面板包括远端子像素单元c，远端子像素单元c上设有存储电容；中间子像素单元b，中间子像素单元b上设有存储电容；近端子像素单元a，近端子像素单元a设有存储电容。以下，详细描述改善其显示效果的过程：
首先获取所述液晶面板的阵列基板上同一栅极信号线上远端子像素单元c、中间子像素单元b、近端子像素单元a的存储电容值；其中所述前1～360列子像素单元为近端子像素区域，361～720列子像素单元为中间子像素区域，721～1080列子像素单元为远端子像素区域。假设选取了同一栅极信号线上1列子像素单元作为近端像素单元，1080列子像素单元为远端子像素单元，选取所选取的近端以及远端的中点处作为要选取的中间子像素单元，即540列作为中间子像素单元，为减少Feed-through现象导致液晶面板两侧发白现象，调整远端子像素单元c和近端子像素单元a的储存电容值，使远端子像素单元c和近端子像素单元a电容耦合效应产生的压降与中间子像素单元b电容耦合效应产生的压降相同，即使三处的Feed-through电压相同。此外，同一栅极信号线上其它近端子像素单元a和远端的子像素单元c也按照各自中间子像素单元调整，即依照540列调整。最后，根据调整的远端子像素单元c和近端子像素单元a的存储电容值，对应调整其它栅极信号线上远端子像素单元c和近端子像素单元a的存储电容值。调节完毕后，远端子像素单元c、近端子像素单元b电容耦合效应产生的压降与中间子像素单元a电容耦合效应产生的压降相同。
在其他实施例中，初始状态下，获取的远端子像素单元、中间子像素单元、近端子像素单元的存储电容值相同。因此，调整远端子像素单元和近端子像素单元的储存电容值的步骤具体是指：将远端子像素单元的储存电容替换为储存电容值更大的电容，将近端子像素单元的储存电容替换为储存电容值更小的电容，使远端子像素单元和近端子像素单元电容耦合效应产生的压降与中间子像素单元电容耦合效应产生的压降相同。即，在改善完毕后，液晶面板的远端子 像素单元上存储电容的存储电容值大于中间子像素单元上存储电容的存储电容值，中间子像素单元上存储电容的存储电容值大于近端子像素单元上存储电容的存储电容值。
可选的，在其他实施例中，为简化改善液晶面板的方法，也可把所述栅极信号上子像素单元按照数目均分为三个区域，分别为远端子像素单元区域、中间子像素单元区域和近端子像素单元区域；根据361～720列中间区域的存储电容值为平均值作为基准(或任取少量子像素为基准)，调整远端子像素单元和近端子像素单元Feed-through电压。如此，调整后的显示面板中，远端子像素单元区域、近端子像素单元区域电容耦合效应产生的压降与中间子像素单元区域电容耦合效应产生的压降相同。
区别于现有技术，本发明通过改变子像素单元的存储电容，使远端子像素单元和近端子像素单元电容耦合效应产生的压降与中间子像素单元电容耦合效应产生的压降相同，有效改善了液晶面板框亮度不均或模组两侧发白现象，为用户提供更优质的体验液晶面板。
在其它实施例中，还可以通过改变液晶面板的源极驱动器的驱动力或源线输入的灰阶电压来调节液晶面板显示效果。
具体地，如图8所示，源极驱动器处理视频信号的基本流程如下，首先视频数据依次经过双向移位寄存器15的缓存，后输入到电位转换器14对视频信号的电压进行提升，提升后的电压打开D/A转换器13中对应的栅极；随之输出缓冲级12中生成的γ基准电压Vr1～Vr5和Vr6～Vr15经场效应管输入到输出缓冲级中，最后配合栅极驱动器信号将源信号输送至面板中的数据线上，最终在液晶面板上显示。
在一个具体实施例中，如图9所示，降低液晶面板两侧源线输入的灰阶电压，使液晶面板两侧的亮度与中间的亮度一致。具体地，减小两侧源线输出缓冲级16中OP放大器数目，降低液晶面板两侧部分驱动能力，使液晶面板两侧亮度降低，达到显示均一的目的。
在另一个具体实施例中，如图10所示，通过增加源线中间部分输出缓冲级17中OP放大器的面积，来提升面板中间部分驱动能力，达到显示均一的目的。在其他实施例中，还可以减少源线两侧部分输出缓冲级17中OP放大器中的面积，来降低面板两侧的驱动能力，达到显示均一的目的。
根据上述已调整的远端子像素单元和近端子像素单元的存储电容值，对应 调整其它栅极信号线上远端子像素单元和近端子像素单元的存储电容值之后，如果发现液晶面板边缘发白现象没有明显改善，且调整当前液晶面板两侧源极驱动器也没有明显改善，说明当面液晶面板黑色矩阵位置的精度存在差异，根据当前液晶面板边缘状态，适当增加黑色矩阵薄膜覆盖宽度，使所述液晶面板两侧的亮度与中间一致。具体地，如图11所示，黑色矩阵18位于子像素单元19底部，用于防止子像素间的漏光。此时，黑色矩阵18宽度较窄，子像素单元19间相互作用，液晶面板显示异常，边缘区域的背景光直接透过子像素单元19区域，找到液晶面板两侧发白区域，增加对应的黑色矩阵18的宽度，使黑色矩阵18覆盖子像素单元19边缘区域。
可选的，上述实施例中，液晶面板为主动矩阵驱动式液晶面板。
上述任一所述的液晶面板均可以应用到液晶显示器、手机、智能手表等具有显示功能的设备中。
图12是本发明液晶面板一实施例电连接示意图，所述液晶面板包括数据输入电路701，数据处理电路702、驱动电路703以及显示电路704，其中，所述输入电路701、所述驱动电路703以及所述显示电路704分别与所述数据处理电路702连接，所述显示电路704还与所述驱动电路703相连接，所述数据输入电路701用于获取待显示图像特征数据，将图像数据转换为输入电信号；所述数据处理702电路用于将所述输入电信号转化为各个子像素对应栅极信号；根据所述栅极信号以及所述输入电信号获取所述液晶面板输出图像特征数据；根据所述特征数据以及显示面板的驱动电流输出图像。
如图13所示，图13是本发明液晶面板一实施例的结构示意图，主要包括：驱动电路801、液晶屏811、背光源816以及高压板817；其中，所述驱动电路801包括：列驱动数据IC802、PCB板803、行驱动IC804和视频信号供电805；所述液晶屏811包括：前偏振光板前玻璃板806、RGB滤色膜807、液晶层808、TFT矩阵809和后偏振光板前玻璃板810；所述背光源816包括：背光灯812、棱镜和扩散面813、光线引导层814和反射镜815。
所述显示面板外的主板电路通过排线与液晶面板接口相连。所述显示面板中还装有PCB板817，其上分布着液晶屏驱动电路801，主要设有视频信号供电805、行驱动IC804、列驱动数据IC等，如图8所示。由主板电路来的数据和时钟信号，经屏显IC电路处理后，分离出行驱动信号和列驱动信号，再分别送到液晶显示屏的行、列电极，驱动液晶显示屏显示出图像。
区别于现有技术，本发明通过改变子像素单元的存储电容，使远端子像素单元和近端子像素单元电容耦合效应产生的压降与中间子像素单元电容耦合效应产生的压降相同，有效改善了液晶面板框亮度不均或模组两侧发白现象，为用户提供更优质的体验。
以上所述仅为本发明的实施例，并非因此限制本发明的专利范围，凡是利用本发明说明书及附图内容所作的等效结构或等效流程变换，或直接或间接运用在其他相关的技术领域，均同理包括在本发明的专利保护范围内。

Claims (17)

  1. 一种改善液晶面板显示状态的方法，其中，所述方法包括：
    获取所述液晶面板的阵列基板一栅极信号线上远端子像素单元、中间子像素单元、近端子像素单元的存储电容值；
    调整远端子像素单元和近端子像素单元的储存电容值，使远端子像素单元、近端子像素单元电容耦合效应产生的压降与中间子像素单元电容耦合效应产生的压降相同；
    根据上述已调整的远端子像素单元和近端子像素单元的存储电容值，对应调整其它栅极信号线上远端子像素单元和近端子像素单元的存储电容值。
  2. 根据权利要求1所述的一种改善液晶面板显示状态的方法，其中，所述调整远端子像素单元和近端子像素单元的储存电容值，使远端子像素单元和近端子像素单元电容耦合效应产生的压降与中间子像素单元电容耦合效应产生的压降相同的具体步骤包括：
    所述远端子像素单元的储存电容大于所述中间子像素单元的储存电容，所述中间子像素单元的储存电容大于所述近端子像素单元的储存电容，使远端子像素单元和近端子像素单元电容耦合效应产生的压降与中间子像素单元电容耦合效应产生的压降相同。
  3. 根据权利要求1所述的一种改善液晶面板显示状态的方法，其中，所述调整远端子像素单元和近端子像素单元的储存电容值，使远端子像素单元和近端子像素单元电容耦合效应产生的压降与中间子像素单元电容耦合效应产生的压降相同的具体步骤包括：
    所述远端子像素单元的存储电容的介电常数小于所述中间子像素单元的介电常数，所述中间子像素单元的介电常数小于所述近端子像素单元的介电常数，使远端子像素单元和近端子像素单元电容耦合效应产生的压降与中间子像素单元电容耦合效应产生的压降相同。
  4. 根据权利要求1所述的一种改善液晶面板显示状态的方法，其中，所述远端子像素单元、中间子像素单元、近端子像素单元沿同一栅极信号线划分为远端子像素单元区域、中间子像素单元区域和近端子像素单元区域。
  5. 根据权利要求1所述的一种改善液晶面板显示状态的方法，其中，所述 获取所述液晶面板的阵列基板一栅极信号线上远端子像素单元、中间子像素单元、近端子像素单元的存储电容值的步骤具体包括：获取所述液晶面板的阵列基板一栅极信号线上远端子像素单元区域、中间子像素单元区域、近端子像素单元区域的平均存储电容值。
  6. 根据权利要求1所述的一种改善液晶面板显示状态的方法，其中，还包括：减小液晶面板源线两侧输出缓冲级中OP放大器数目，使液晶面板两侧的亮度与中间的亮度一致。
  7. 根据权利要求1所述的一种改善液晶面板显示状态的方法，其中，还包括：增加源线中间部分输出缓冲级中OP放大器的面积，使液晶面板两侧的亮度与中间的亮度一致。
  8. 根据权利要求1所述的一种改善液晶面板显示状态的方法，其中，还包括：增加黑色矩阵薄膜覆盖宽度，使液晶面板两侧的亮度与中间的亮度一致。
  9. 一种液晶面板，其中，包括：
    远端子像素单元，所述远端子像素单元上设有存储电容；
    中间子像素单元，所述中间子像素单元上设有存储电容；
    近端子像素单元，所述近端子像素单元上设有存储电容；
    所述远端子像素单元、所述近端子像素单元电容耦合效应产生的压降与所述中间子像素单元电容耦合效应产生的压降相同。
  10. 一种液晶显示器，其中：包括液晶面板，所述液晶面板使用以下方法所制得：
    获取所述液晶面板的阵列基板一栅极信号线上远端子像素单元、中间子像素单元、近端子像素单元的存储电容值；
    调整远端子像素单元和近端子像素单元的储存电容值，使远端子像素单元、近端子像素单元电容耦合效应产生的压降与中间子像素单元电容耦合效应产生的压降相同；
    根据上述已调整的远端子像素单元和近端子像素单元的存储电容值，对应调整其它栅极信号线上远端子像素单元和近端子像素单元的存储电容值。
  11. 根据权利要求10所述的一种液晶显示器，其中，经过调整后，所述远端子像素单元的储存电容大于所述中间子像素单元的储存电容，所述中间子像素单元的储存电容大于所述近端子像素单元的储存电容，远端子像素单元和近端子像素单元电容耦合效应产生的压降与中间子像素单元电容耦合效应产生的 压降相同。
  12. 根据权利要求10所述的一种液晶显示器，其中，经过调整后，所述远端子像素单元的存储电容的介电常数小于所述中间子像素单元的介电常数，所述中间子像素单元的介电常数小于所述近端子像素单元的介电常数，使远端子像素单元和近端子像素单元电容耦合效应产生的压降与中间子像素单元电容耦合效应产生的压降相同。
  13. 根据权利要求10所述的一种液晶显示器，其中，所述远端子像素单元、中间子像素单元、近端子像素单元沿同一栅极信号线划分为远端子像素单元区域、中间子像素单元区域和近端子像素单元区域。
  14. 根据权利要求10所述的一种液晶显示器，其中，经过调整后，所述远端子像素单元区域的储存电容大于所述中间子像素单元区域的储存电容，所述中间子像素单元区域的储存电容大于所述近端子像素单元区域的储存电容，远端子像素单元区域和近端子像素单元区域电容耦合效应产生的压降与中间子像素单元区域电容耦合效应产生的压降相同。
  15. 根据权利要求10所述的一种液晶显示器，其中，所述液晶面板源线两侧输出缓冲级中OP放大器的数目比中间输出缓冲级中的OP放大器的数目少。
  16. 根据权利要求10所述的一种液晶显示器，其中，源线中间部分输出缓冲级中OP放大器的面积比两侧输出缓冲级中OP放大器的面积大。
  17. 根据权利要求10所述的一种液晶显示器，其中，所述方法还包括：增加黑色矩阵薄膜覆盖宽度，使液晶面板两侧的亮度与中间的亮度一致。
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