WO2019033304A1 - 一种调压电路 - Google Patents
一种调压电路 Download PDFInfo
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- WO2019033304A1 WO2019033304A1 PCT/CN2017/097690 CN2017097690W WO2019033304A1 WO 2019033304 A1 WO2019033304 A1 WO 2019033304A1 CN 2017097690 W CN2017097690 W CN 2017097690W WO 2019033304 A1 WO2019033304 A1 WO 2019033304A1
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- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
- G05F1/10—Regulating voltage or current
- G05F1/46—Regulating voltage or current wherein the variable actually regulated by the final control device is dc
- G05F1/56—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices
- G05F1/59—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices including plural semiconductor devices as final control devices for a single load
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
- G05F1/10—Regulating voltage or current
- G05F1/46—Regulating voltage or current wherein the variable actually regulated by the final control device is dc
- G05F1/56—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices
- G05F1/563—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices including two stages of regulation at least one of which is output level responsive, e.g. coarse and fine regulation
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
- G05F1/10—Regulating voltage or current
- G05F1/46—Regulating voltage or current wherein the variable actually regulated by the final control device is dc
- G05F1/56—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices
- G05F1/575—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices characterised by the feedback circuit
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
- G05F1/10—Regulating voltage or current
- G05F1/46—Regulating voltage or current wherein the variable actually regulated by the final control device is dc
- G05F1/56—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices
- G05F1/59—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices including plural semiconductor devices as final control devices for a single load
- G05F1/595—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices including plural semiconductor devices as final control devices for a single load semiconductor devices connected in series
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
- G05F3/02—Regulating voltage or current
- G05F3/08—Regulating voltage or current wherein the variable is dc
- G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
- G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
- G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
- G05F3/26—Current mirrors
- G05F3/262—Current mirrors using field-effect transistors only
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/4074—Power supply or voltage generation circuits, e.g. bias voltage generators, substrate voltage generators, back-up power, power control circuits
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/30—Power supply circuits
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
- G11C5/147—Voltage reference generators, voltage or current regulators; Internally lowered supply levels; Compensation for voltage drops
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/02—Arrangements for writing information into, or reading information out from, a digital store with means for avoiding parasitic signals
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/0045—Converters combining the concepts of switch-mode regulation and linear regulation, e.g. linear pre-regulator to switching converter, linear and switching converter in parallel, same converter or same transistor operating either in linear or switching mode
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M3/00—Conversion of dc power input into dc power output
- H02M3/02—Conversion of dc power input into dc power output without intermediate conversion into ac
- H02M3/04—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters
- H02M3/10—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M3/145—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
- H02M3/155—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
- H02M3/156—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M3/00—Conversion of dc power input into dc power output
- H02M3/22—Conversion of dc power input into dc power output with intermediate conversion into ac
- H02M3/24—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters
- H02M3/28—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac
- H02M3/325—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal
- H02M3/335—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only
Definitions
- the present application relates to the field of integrated circuit technology, and in particular, to a voltage regulating circuit.
- Integrated circuits With the development of semiconductor processes, integrated circuits have been widely used. Integrated circuits usually have different working scenarios and uncertainties when working. Different working scenarios and uncertainties are generally caused by changes in various factors that affect the normal operation of integrated circuits, such as temperature changes, integrated circuits. Internal components are aging, etc. Moreover, different working scenarios and the uncertainty often bring many disadvantages to the integrated circuit, for example, causing fluctuations in the operating voltage in the integrated circuit, thereby affecting the stability of the system. Therefore, in order to ensure that the integrated circuit can work normally under uncertainty, it is necessary to adjust the operating voltage in the integrated circuit through the voltage regulating circuit.
- the operating voltage in the integrated circuit can be regulated by the voltage regulating circuit shown in FIG. 1 to ensure the stability of the system.
- the voltage regulating circuit includes a first switching unit 10, a second switching unit 20, a comparison control unit 30, and a load 40, each of which has a transformer function.
- the first switching unit 10 is coupled to the load 40 for providing a first output voltage VVDD to the load 40.
- the second switching unit 20 is a mirror image of the first switching unit 10, that is, the second switching unit 20 is an equal-scale reduction structure of the first switching unit 10, and the second output voltage VDR output by the second switching unit 20
- the first output voltage VVDD that is unaffected by fluctuations in the load is equal in magnitude.
- the comparison control unit 30 is connected to the first switching unit 10 and the second switching unit 20, respectively, for collecting the first output voltage VVDD and the second output voltage VDR, and based on the first output voltage VVDD, the second output voltage VDR and the reference.
- the voltage V ref determines the bias voltage V1 to control the conduction state of the first switching unit 10 and the second switching unit 20 with the bias voltage V1, thereby adjusting the first output voltage VVDD.
- the bias voltage V1 for controlling the first switching unit 10 is determined by two voltages, the two partial voltages include a voltage output based on VDR and V ref and a voltage output based on VVDD and V ref , and the second The output voltage VDR is not affected by the load and fluctuates. Therefore, the voltage based on the VDR and the reference voltage output can eliminate the error of the bias voltage V1 due to the fluctuation of the first output voltage VVDD, thereby ensuring the stability of the system.
- a relatively wide output current range refers to a large span of the output current, for example, an output current.
- the range can range from a few milliamps to a few amps, and how to ensure a high Power Supply Rejection Ratio (PSRR) is also a research hotspot in achieving a wide output current range.
- PSRR Power Supply Rejection Ratio
- the present application provides a voltage regulating circuit.
- the technical solution is as follows:
- the voltage regulating circuit includes a first switching unit, a second switching unit, a third switching unit, a first comparison control unit, a second comparison control unit, and a load, and the first switching unit and the second switching unit are both With variable pressure function;
- the first switch unit and the second switch unit both receive a voltage input from a power source, and the first switch
- the equivalent resistance of the unit is less than the equivalent resistance of the second switching unit
- the first switching unit and the second switching unit are also respectively connected to the load for supplying a first output voltage to the load, the first output voltage being the first switching unit and the a voltage output by the second switching unit;
- the first comparison control unit is connected to the first switch unit, configured to collect the first output voltage, and determine a first offset based on the first output voltage, the first reference voltage, and the second reference voltage And a voltage to control, by using the first bias voltage, a magnitude of an equivalent resistance of the first switching unit by a digital control manner, the first reference voltage being greater than the second reference voltage; the second comparison control unit Connected to the third switching unit and the second switching unit, respectively, for collecting the first output voltage and the second output voltage, and based on the first output voltage, the second output voltage, and the third Determining a second bias voltage by using a reference voltage, and controlling, by the second bias voltage, an magnitude of an equivalent resistance of the third switching unit and the second switching unit by an analog control manner, the third reference voltage being greater than The second reference voltage is smaller than the first reference voltage, and the third switch unit is a mirror image of the unit after the second switch unit and the first switch unit are connected in parallel, and is used for inputting The second output voltage to nullify the error to the second bias voltage
- the voltage regulating circuit can adjust the first output voltage through the branch where the first switching unit is located, or can adjust the first output voltage through the branch where the second switching unit is located.
- the first reference voltage, the second reference voltage, and the third reference voltage when the first output voltage is greatly disturbed, the first output voltage is adjusted by the branch where the first switching unit is located, When a small disturbance occurs in the first output voltage, the first output voltage is adjusted by the branch in which the second switching unit is located.
- the first switching unit since the equivalent resistance of the first switching unit is smaller than the equivalent resistance of the second switching unit, and the first switching unit and the second switching unit are connected in parallel, the first switching unit flows through the first The current of the branch where the switching unit is located is greater than the current flowing through the branch of the second switching unit. Since the first switching unit in the digital control mode operates in the linear region, it can be ensured that the first open unit can flow a large current under a unit area, thereby realizing a wide output current capability.
- the second switching unit since the second switching unit is controlled by the analog control mode, the equivalent transconductance of the output of the second switching unit can be improved, and the transconductance is proportional to the PSRR, and therefore, the second switching unit is located
- the control of the branch ensures a high PSRR.
- the first switching unit adopts a digital control mode, when a small disturbance occurs, the first comparison control unit does not control the switching tube in the first switching unit to be turned on, and therefore, the branch does not affect the system.
- the PSRR has an effect that the branch does not degrade the PSRR of the system.
- an equivalent resistance of the first switching unit is smaller than an equivalent resistance of the second switching unit; or
- the first switching unit and the second switching unit are both switching units composed of metal oxide semiconductor MOS tubes, and the first switching unit includes a MOS tube having a width to length ratio greater than the second switch
- the equivalent resistance of the first switching unit is smaller than the equivalent resistance of the second switching unit.
- the equivalent resistance of the first switching unit may be smaller than the equivalent resistance of the second switching unit by setting the number of switches in the first switching unit and the second switching unit.
- the flexibility of the implementation may be improved by setting the aspect ratio of the MOS tube in the first switching unit and the second switching unit to achieve an equivalent resistance of the first switching unit that is smaller than the equivalent resistance of the second switching unit.
- the third switch unit includes a first mirror switch unit and a second mirror switch unit
- the first mirror switch unit includes a number of switches that is one-Nth of the number of switches included in the first switch unit.
- the number of switches included in the second mirror switch unit is one-Nth of the number of switches included in the second switch unit, and the N is greater than A positive integer of 1;
- the voltage regulating circuit further includes a mirror resistor, the magnitude of the mirror resistor being one-Nth of a resistance included in the load.
- the mirror switch unit included in the third switch unit may be reduced according to a certain ratio, that is, the number of switches included in the third switch unit is set to the first switch unit and the second switch. One tenth of the unit. In this way, the processability is simplified.
- the width and length ratio of the MOS transistors included in the first mirror switching unit are both One ninth of the aspect ratio of the MOS transistor included in the first switching unit
- the aspect ratio of the MOS transistor included in the second mirror switching unit is the aspect ratio of the MOS transistor included in the second switching unit One-ninth.
- the width and length of the MOS tube can affect the magnitude of the current flowing through the MOS transistor, in order to implement the third switching unit, in this implementation, the width of the MOS transistor included in the mirrored third switching unit can be The length ratio is set to one-N of the MOS tube before mirroring. In this way, the effect of simplifying the process is also achieved.
- the voltage regulating circuit further includes a fourth switching unit, and the fourth switching unit includes a plurality of switches, the fourth switching unit is connected in series with the second switching unit and the Between the loads, the fourth switching unit is configured to increase an equivalent resistance of a branch where the second switching unit is located to reduce a current flowing through the second switching unit; correspondingly, the third switching unit is A mirror image of the connected unit between the second switching unit, the first switching unit, and the fourth switching unit.
- a fourth switching unit is connected in series between the second switching unit and the load. Specifically, an input end of the fourth switch unit is connected to an output end of the second switch unit, and an output end of the fourth switch unit is connected to the load. In this way, it can be ensured that the current flowing through the branch of the second switching unit is sufficiently small.
- the fourth switch unit is connected to the first comparison control unit to control the fourth switch unit by using a first bias voltage determined by the first comparison control unit The size of the equivalent resistance.
- the fourth switch unit is connected to the second comparison control unit to control the fourth switch by a second bias voltage determined by the second comparison control unit The size of the equivalent resistance of the unit.
- the fourth switching unit can be controlled by different implementation manners according to actual needs, so that the flexibility of implementation can be improved.
- the window comparator is configured to: when the first output voltage is greater than the first reference voltage, based on the first reference voltage and Determining, by the first output voltage, the first bias voltage; when the first output voltage is less than the second reference voltage, determining the first bias based on the second reference voltage and the first output voltage Set the voltage.
- the first comparison control unit may be implemented by using a window comparator. If the first output voltage is greater than the first reference voltage, the voltage regulating circuit determines the first stage by using the first output voltage and the first reference voltage. A bias voltage controls the magnitude of the equivalent resistance of the first switching unit. In an actual implementation, if the determined first bias voltage is larger, that is, the difference between the first output voltage and the first reference voltage is larger, it is required to control the first switching unit, etc. The greater the effective resistance becomes, in one possible implementation, that is, the more switches in the first switching unit need to be controlled to be non-conducting.
- the voltage regulating circuit controls the equivalent of the first switching unit by the first bias voltage determined based on the first output voltage and the second reference voltage The size of the resistor.
- the determined first bias voltage is smaller, that is, the difference between the first output voltage and the second reference voltage is smaller, it is required to control the first switching unit, etc.
- control of the first switching unit by the first comparison control unit is implemented by the window comparator, so that when the first output voltage is greatly disturbed, the first branch unit is connected to the first The output voltage is adjusted.
- the second comparison control unit includes a first amplification module, a second amplification module, and a third amplification module, where the first amplification module is respectively connected to the second amplification module and the third amplification module, The second amplifying module is connected to the third amplifying module and connected to the second switching unit; the voltage regulating circuit further includes a feedback compensating unit, the feedback compensating unit and the second switching unit, the second The amplification module and the third amplification module are respectively connected to perform feedback compensation on the branch where the second amplification module is located and the branch where the third amplification module is located by using the feedback compensation capacitor included in the feedback compensation unit.
- the embodiment of the present invention uses the circuit shown in FIG. 5 to implement control of the second switching unit by the second comparison control unit.
- the first amplification module is a module including a transistor and having an amplification function.
- the noise is proportional to the size of the transistor, that is, if the size of the transistor included in the first amplifying module is larger, the generated noise is smaller, and conversely, if the size of the transistor included in the first amplifying module is smaller, the generated The larger the noise, therefore, in the embodiment of the present invention, in order to achieve low noise, the first amplifying module adopts an amplifying function module including a thicker transistor, that is, the size of the transistor included in the first amplifying module is generally larger.
- FIG. 6 is a specific implementation circuit diagram according to an exemplary embodiment, where the positive output end of the first amplification module is connected to the third amplification module, and The negative output terminal of the amplification module is connected to the second amplification module, and the output of the second amplification module is connected to the output of the third amplification module, and the second amplification module and the third amplification module are buffers.
- connection mode that is, the output end of the second amplification module is connected to the positive input end of the second amplification module, and the output end of the third amplification module is connected to the negative input end of the third amplification module.
- the voltage regulating circuit further includes a feedback compensation unit including a capacitor Cm, a G4 module and a G5 module.
- the output end of the G4 module is connected to the third amplifying module, and the G4 module and the Cm are used for feedback compensation of the branch where the third amplifying module is located.
- the output end of the G5 module is connected to the second amplifying module, and the G5 module and Cm are used for feedback compensation of the branch where the second amplifying module is located. In this way, the stability of the branch loop where the second amplification module is located and the branch loop where the third amplification module is located are ensured.
- the voltage regulating circuit provided by the present application outputs the first output voltage to the load when the power source starts to supply power, and the first switching unit and the second switching unit output the first output voltage.
- the voltage regulating circuit may control the first switching unit to perform voltage adjustment through the first comparison control unit, or control the second switching unit to perform voltage adjustment through the second comparison control unit. That is, the voltage regulating circuit can collect the first output voltage by using the first comparison control unit, and control the first switch list by digital control based on the first output voltage, the first reference voltage, and the second reference voltage. The equivalent resistance of the element is adjusted to adjust the first output voltage.
- the first output voltage and the second output voltage are collected by the second comparison control unit, and the third switching unit and the second switch are controlled by an analog control manner based on the first output voltage, the second output voltage, and the third reference voltage.
- the equivalent resistance of the cell is sized to regulate the first output voltage.
- the equivalent resistance of the first switching unit is smaller than the equivalent resistance of the second switching unit, that is, the current flowing through the branch of the first switching unit is greater than the current flowing through the branch of the second switching unit, due to the number
- the first switching unit in the control mode operates in the linear region, so that the first open unit can ensure a large current flowing per unit area, and a wide output current capability is realized.
- the equivalent transconductance of the output of the second switching unit can be improved by using the analog control method, and the transconductance is proportional to the PSRR. Therefore, the control of the branch of the second switching unit is ensured. Higher PSRR.
- the third reference voltage is greater than the second reference voltage and smaller than the first reference voltage, that is, when the first output voltage is greatly disturbed, the voltage is adjusted through the branch of the first switching unit. When a small disturbance occurs in the output voltage, the voltage is adjusted through the branch of the second switching unit.
- the first switching unit adopts a digital control mode, when a small disturbance occurs, the first comparison control unit does not The switch in the first switching unit is controlled to be turned on. Therefore, the branch does not affect the PSRR of the system, that is, the branch does not lower the PSRR of the system.
- FIG. 1 is a voltage regulating circuit according to an exemplary embodiment
- FIG. 2 is a voltage regulating circuit according to another exemplary embodiment
- FIG. 3 is a schematic diagram showing a connection between a first switching unit and a first comparison control unit, according to an exemplary embodiment
- FIG. 4 is a voltage regulating circuit according to another exemplary embodiment
- FIG. 5 is a schematic diagram showing a connection between a second comparison control unit and a second switching unit, according to an exemplary embodiment
- FIG. 6 is a connection circuit diagram of a second comparison control unit and a second switching unit, according to an exemplary embodiment
- FIG. 7 is a voltage regulating circuit according to another exemplary embodiment.
- first switching unit 1: first switching unit; 2: second switching unit; 3: third switching unit; 4: first comparison control unit; 5: second comparison control unit; 6: load; 7: fourth switching unit; Feedback compensation unit;
- 51 a first amplifier
- 52 a second amplifier
- G1 first amplification module
- G2 second amplification module
- G3 third amplification module.
- PSRR is one of the important parameters to consider during the operation of the voltage regulator circuit.
- the PSRR can reflect this The noise immunity of the voltage regulator circuit, the larger the value of the PSRR, indicating that the noise immunity of the voltage regulator circuit is stronger, and the stronger the noise immunity, the more stable the system.
- a voltage regulating circuit is provided, which can ensure high PSRR performance in a wide output current range.
- FIG. 2 is a schematic structural diagram of a voltage regulating circuit according to an embodiment of the present invention.
- the voltage regulating circuit includes a first switching unit 1, a second switching unit 2, a third switching unit 3, a first comparison control unit 4, a second comparison control unit 5, and a load 6, wherein the first switch Both the unit 1 and the second switching unit 2 have a transformer function.
- the first switching unit 1 and the second switching unit 2 both receive a voltage input from the power supply VDD, and the equivalent resistance of the first switching unit 1 is smaller than the equivalent resistance of the second switching unit 2, wherein the first Each of the switching unit 1 and the second switching unit 2 corresponds to a resistor.
- the switching unit generally includes a plurality of paths and switching tubes (such as diodes) connected to each other in series or in parallel on the plurality of paths. In this case, the equivalent resistance of the switching unit is turned on. The total resistance of the switch tube on the path. Further, when comparing the magnitudes of the equivalent resistances of the two switching units, it can be achieved by comparing the total resistances of the two switching units.
- the first switch unit 1 includes a plurality of switch tubes connected in series
- the second switch unit 2 includes a switch tube
- the total resistance of the plurality of switch tubes connected in series in the first switch unit 1 is determined.
- the total resistance is compared with the equivalent of the switching tube in the second switching unit 2.
- the principle of paralleling is the same.
- the first switch unit 1 and the second switch unit 2 are also respectively connected to the load 6 for supplying the first output voltage VVDD to the load 6.
- the first output voltage VVDD is the power supply VDD via the first The voltage output by the switching unit 1 and the second switching unit 2.
- the third switching unit 3 receives the voltage input from the power supply VDD and outputs a second output voltage VDR.
- the third switching unit 3 is a mirror image of the unit in which the first switching unit 1 and the second switching unit 2 are connected in parallel, and the output thereof
- the second output voltage VDR is equal in magnitude to the first output voltage VVDD before the fluctuation is generated, to eliminate the error caused by the fluctuation of the load 6 to the second bias voltage by using the second output voltage VDR, and thus,
- the third switching unit 3 ensures the stability of the system.
- the second bias voltage is used to control the second switching unit 2, as described in detail below.
- the first comparison control unit 4 is connected to the first switching unit 1 for controlling the magnitude of the equivalent resistance of the first switching unit 1 by digital control.
- the second comparison control unit 5 is respectively connected to the third switching unit 3 and the second switching unit 2, and the second comparison control unit 5 is configured to control the second switching unit 2 and the third switching unit 3 by using an analog control manner. The size of the effect resistor.
- the magnitude of the equivalent resistance of the switch unit when the magnitude of the equivalent resistance of the switch unit is controlled by the digital control manner, it generally refers to controlling the number of conduction of the plurality of switches included in the switch unit; when controlled by the analog control mode
- the magnitude of the equivalent resistance of the switching unit generally refers to controlling the magnitude of the gate voltage of the switching unit, thereby controlling the amount of current flowing through the switching unit.
- the branch of the first switching unit 1 or the second switching unit 2 may be The circuit adjusts the first output voltage VVDD. It is worth mentioning that, in the above voltage regulating circuit, since the equivalent resistance of the first switching unit 1 is smaller than the equivalent resistance of the second switching unit 2, and the first switching unit 1 and the second switching unit 2 The parallel connection is such that the current flowing through the branch of the first switching unit 1 is greater than the current flowing through the branch of the second switching unit 2.
- the bias voltage for controlling the gate of the first switching unit 1 is a low voltage or a high voltage in the digital control mode, for example, the low voltage and the high voltage are respectively "0" and "1", that is, when The first switching unit 1 is turned on
- the voltage of the gate of the first switching unit 1 is a low voltage
- the voltage of the gate of the first switching unit 1 is a high voltage
- the lower first switching unit 1 operates in the linear region, so that the first open unit 1 can ensure a large current flow per unit area, thereby ensuring that the voltage regulating circuit can realize a wide current output range.
- the unit area referred to herein means a single switch tube included in the first switch unit 1.
- the second switch needs to be added.
- the number of transistors in unit 2 the number of transistors is proportional to the equivalent transconductance, that is, the equivalent transconductance of the output of the second switching unit 2 can be increased, and the transconductance is proportional to the PSRR, therefore, The control of the branch where the two switching units 2 are located ensures a high PSRR.
- voltage regulation may be selected by which branch is performed based on the range of variation of the first output voltage VVDD.
- a plurality of reference voltages are disposed in the voltage regulating circuit, including: a first reference voltage V ref1 , a second reference voltage V ref2 , and a third reference voltage V ref3 .
- the first reference voltage V ref1 is greater than the second reference voltage V ref2
- the third reference voltage V ref3 is greater than the second reference voltage V ref2 and smaller than the first reference voltage V ref1 .
- the value of the third reference voltage V ref3 may be set to an actual required voltage value of the load.
- the first reference voltage V ref1 may be a third reference voltage V ref3 plus a fixed value ⁇ V.
- the third reference voltage V ref3 can be set to 9V, and the ⁇ V can be set to 1V.
- the first reference voltage V ref1 is 10V
- the second reference voltage is V ref2 is 8V.
- the first output voltage VVDD may be considered to have a large fluctuation, if the first output voltage VVDD and the foregoing When the three reference voltages V ref3 are compared, that is, the first output voltage VVDD is between the first reference voltage V ref1 and the second reference voltage V ref2 , the first output voltage VVDD may be considered to have a small fluctuation.
- the first switching unit 1 passes through The branch adjusts the first output voltage VVDD, and when the first output voltage VVDD exhibits a small disturbance, the first output voltage VVDD is adjusted by the branch of the second switching unit 2.
- the first output voltage VVDD is adjusted by the branch where the first switching unit 1 is located, and the specific implementation of adjusting the first output voltage VVDD by the branch of the second switching unit 2 is separately performed.
- the introduction is as follows:
- the implementation process specifically includes: the first comparison control unit 4 is connected to the first switching unit 1 for Collecting the first output voltage VVDD, and determining a first bias voltage based on the first output voltage VVDD, the first reference voltage V ref1 and the second reference voltage V ref2 to utilize the first bias voltage by digital control The magnitude of the equivalent resistance of the first switching unit 1 is controlled.
- the first output voltage VVDD outputted by the first switching unit 1 and the second switching unit 2 is supplied to the load 6, that is, the load input voltage is supplied to the load 6.
- the adjustment The voltage circuit acquires the first output voltage VVDD through the first comparison control unit 4, and determines the first bias voltage based on the first output voltage VVDD, the first reference voltage Vref1, and the second reference voltage Vref2 . Thereafter, the magnitude of the equivalent resistance of the first switching unit 1 is controlled by digital control using the first bias voltage.
- the first comparison control unit 4 may include a window comparator 41.
- the switching transistor of the first switching unit is a P-type transistor as an example for description. Determining the first bias voltage based on the first reference voltage V ref1 and the first output voltage VVDD when the first output voltage VVDD is greater than the first reference voltage V ref1 ; when the first output voltage VVDD is less than the first When the reference voltage V ref2 is two, the first bias voltage is determined based on the second reference voltage V ref2 and the first output voltage VVDD.
- the voltage regulating circuit passes the first bias voltage determined based on the first output voltage VVDD and the first reference voltage V ref1 .
- the magnitude of the equivalent resistance of the first switching unit 1 is controlled.
- the determined first bias voltage is larger, that is, the difference between the first output voltage VVDD and the first reference voltage V ref1 is larger, it is required to control the first switch.
- the larger the equivalent resistance of the unit 1 becomes, in a possible implementation, that is, the more switches in the first switching unit 1 need to be controlled to be non-conducting.
- the specific implementation of determining the first bias voltage based on the first reference voltage V ref1 and the first output voltage VVDD includes: the window comparator 41 the first reference voltage V ref1 and the first output voltage VVDD A comparison is made to determine a difference between the first reference voltage V ref1 and the first output voltage VVDD, after which the window comparator 41 determines the difference to determine the first bias voltage.
- the voltage regulating circuit controls the first bias voltage determined by the first output voltage VVDD and the second reference voltage V ref2 The magnitude of the equivalent resistance of a switching unit 1.
- the determined first bias voltage is smaller, that is, the smaller the difference between the first output voltage VVDD and the second reference voltage V ref2 is, the first switch needs to be controlled.
- the specific implementation of determining the first bias voltage based on the second reference voltage V ref2 and the first output voltage VVDD includes: the window comparator 41 the first output voltage VVDD and the second reference voltage V ref2 A comparison is made to determine a difference between the first output voltage VVDD and the second reference voltage Vref2 , after which the window comparator 41 determines the difference to determine the first bias voltage.
- the magnitude of the equivalent resistance of the first switching unit 1 is kept unchanged. In a possible implementation manner, it is ensured that the current number of conductions of the plurality of switches included in the first switching unit 1 does not change. That is, if the first output voltage VVDD is between the first reference voltage V ref1 and the second reference voltage V ref2 , it indicates that the first output voltage VVDD exhibits a small disturbance, and when the first output voltage VVDD appears smaller During the disturbance, the magnitude of the equivalent resistance of the first switching unit 1 does not change, thus ensuring that the first switching unit 1 does not affect the PSRR of the system. That is, although the first switching unit 1 adopts a digital control mode, the first switching unit 1 does not lower the PSRR of the system when the system reaches a steady state.
- the specific implementation of controlling the magnitude of the equivalent resistance of the first switching unit 1 by using the first bias voltage by using the first bias voltage includes: determining, by the first comparison control unit 4, the first bias voltage, and storing from the stored Bias In the correspondence between the voltage range and the digital control information, digital control information corresponding to the bias voltage range in which the first bias voltage is located is obtained. Then, the magnitude of the equivalent resistance of the first switching unit 1 is controlled by using the acquired digital control information, that is, the switch in the first switching unit 1 is controlled to be turned on and off, thereby implementing the first switching unit. The size of the equivalent resistance of 1 is controlled.
- the digital control information may be composed of binary "0" and "1", wherein for the P-type transistor, "0" represents the conduction of the switch, and "1" represents the non-conduction of the switch.
- the first switching unit 1 adopts a digital control mode
- the first comparison control unit 4 does not control the switching tube in the first switching unit 1. Turning on, therefore, the branch does not affect the PSRR of the system, ie the branch does not reduce the PSRR of the system.
- the switch tube in the digital control mode works in the linear region, the current flowing through the digital control mode under the unit area is more, that is, the first switch unit 1 can be controlled by digital control. Improve the response speed to larger currents and achieve higher transient response capability.
- the implementation process specifically includes: the second comparison control unit 5 is connected to the second switching unit 2, and is used for Collecting the first output voltage VVDD and the second output voltage VDR, and determining a second bias voltage based on the first output voltage VVDD, the second output voltage VDR, and the third reference voltage V ref3 , and using the second bias
- the voltage controls the magnitude of the equivalent resistance of the second switching unit 2 by an analog control method.
- the first output voltage VVDD outputted by the first switching unit 1 and the second switching unit 2 is supplied to the load 6, that is, the load input voltage is supplied to the load 6.
- the voltage regulating circuit The first output voltage VVDD and the second output voltage VDR output by the third switching unit 3 are collected by the second comparison control unit 5, and based on the first output voltage VVDD, the second output voltage VDR, and the third reference voltage V ref3 The second bias voltage is determined. Then, the second bias voltage is used to control the magnitude of the equivalent resistance of the third switching unit 3 and the second switching unit 2, thereby adjusting the first output voltage VVDD.
- the second comparison control unit 5 is always in an active state when actually implemented. Wherein, when a small fluctuation occurs, since the first comparison control unit 4 does not control the switching tube in the first switching unit 1 to be turned on, the first output is passed through the branch of the second switching unit 2 at this time. The voltage VVDD is adjusted. Of course, when a large fluctuation occurs, the second comparison control unit 5 is also in an active state, but since the equivalent resistance of the first switching unit 1 is smaller than the equivalent resistance of the second switching unit 2, The current flowing through the branch where the first switching unit 1 is located is large, that is, the first switching unit 1 is in a dominant role. Therefore, when a large fluctuation occurs, the first switching unit 1 is actually located. The branch adjusts the first output voltage VVDD.
- the embodiment of the present invention is only described by taking the second comparison control unit 5 as an active state as an example.
- the second comparison can also be controlled.
- the control unit 5 does not work.
- the first comparison control unit 4 can output a control signal to the second comparison control unit 5 to control the second comparison control unit 5 to be inoperative by the control signal. limited.
- the second comparison control unit 5 may include a first amplifier 51 and a second amplifier 52, and the first input end of the first amplifier 51 and the output end of the third switch unit 3 connected, to collect the second output voltage, a second input terminal of the first amplifier 51 is connected to a third reference voltage V ref3, to collect the third reference voltage V ref3, the first amplifier 51 based on the acquired second The second output voltage VDR and the third reference voltage V ref3 determine and output a voltage.
- the first input end of the second amplifier 52 is connected to the output end of the first switch unit 1 or the second switch unit 2 for collecting the first output of the first switch unit 1 or the second switch unit 2 a voltage VVDD
- the second input terminal of the second amplifier 52 is also connected to the third reference voltage V ref3 to collect the third reference voltage V ref3
- the second amplifier 52 is based on the collected first output voltage VVDD and The third reference voltage V ref3 determines and outputs another voltage.
- the output end of the first amplifier 51 is connected to the output end of the second amplifier 52, that is, the second bias voltage actually includes two parts of voltage, the two parts of the voltage are respectively the first The voltage output from the amplifier 51 and the voltage output from the second amplifier 52 described above, wherein the voltage output by the first amplifier 51 is the same as the voltage output by the second amplifier 52.
- the second bias voltage is used to control the gate voltages of the second switching unit 2 and the third switching unit 3 to control the second switching unit 2 and the third switch by an analog control manner based on the second bias voltage.
- the first output voltage VVDD may be considered to have a small fluctuation.
- the second switching unit 2 may be supported by the second switching unit 2 .
- the circuit regulates the voltage of the first output voltage VVDD.
- the second comparison control unit 5 includes a first amplification module G1, a second amplification module G2, and a third amplification module G3, and the first amplification module 1 and the second amplification module G2 and the The third amplification module G3 is connected, and the second amplification module G2 is connected to the third amplification module G3 and connected to the second switching unit 2.
- the voltage regulating circuit further includes a feedback compensation unit 8 connected to the second switching unit 2, the second amplifying module G2 and the third amplifying module G3, respectively, for being included by the feedback compensating unit 8.
- the feedback compensation capacitor Cm performs feedback compensation on the branch where the second amplification module G2 is located and the branch where the third amplification module G3 is located.
- the embodiment of the present invention uses the circuit shown in FIG. 5 to implement control of the second switching unit 2 by the second comparison control unit 5.
- the first amplification module G1 is a module including a transistor and having an amplification function. Since the noise is proportional to the size of the transistor, that is, if the size of the transistor included in the first amplifying module G1 is larger, the generated noise is smaller.
- the first amplifying module G1 adopts an amplifying function module including a thicker transistor, that is, the size of the transistor included in the first amplifying module G1 is usually larger. .
- FIG. 6 is a specific implementation circuit diagram of the first amplification module G1 and the third amplification module G3 , and
- the negative output end of the first amplifying module G1 is connected to the second amplifying module G2, and the output of the second amplifying module G2 is connected to the output of the third amplifying module G3, and the second amplifying module G2 and the first
- the third amplification module G3 is a buffer connection mode, that is, the output end of the second amplification module G2 is connected to the positive input end of the second amplification module G2, and the output end of the third amplification module G3 and the third The negative input terminal of the amplification module G3 is connected. In this way, the impedances of the outputs of the second amplification module G2 and the third amplification module G3 are reduced
- the voltage regulation circuit further includes a feedback compensation unit 8.
- the feedback compensation unit 8 Includes capacitors Cm, G4 modules and G5 modules.
- the output of the G4 module is connected to the third amplifying module G3, and the G4 module and Cm are used for feedback compensation of the branch of the third amplifying module G3.
- the output end of the G5 module is connected to the second amplifying module G2, and the G5 module and Cm are used for feedback compensation of the branch where the second amplifying module G2 is located.
- the G4 module and the G5 module may be a current source or other amplifying unit, which is not limited in this embodiment of the present invention.
- FIG. 6, shows a specific implementation of the G4 module and the G5 module in an actual circuit.
- the third switch unit 3 is a mirror image of the second switch unit 2 and the first switch unit 1 in parallel.
- the specific implementation there are two cases as follows:
- the third switch unit 3 includes a first mirror switch unit and a second mirror switch unit
- the first mirror switch unit includes a number of switches that are one-Nth of the number of switches included in the first switch unit 1.
- the second mirror switch unit includes a number of switches that are one-Nth of the number of switches included in the second switch unit 2.
- the voltage regulating circuit further includes a mirror resistor, and the size of the mirror resistor R2 is one N of the resistance R1 included in the load, and the N is a positive integer greater than 1.
- the mirror switch unit included in the third switch unit 3 may be reduced according to a certain ratio, that is, the number of switches included in the third switch unit 3 is set to be the first The switching unit 1 and the second switching unit 2 are one-N times larger.
- the second case when the first switching unit 1 and the second switching unit 2 are both switching units composed of a metal oxide semiconductor (MOS), the first mirror switching unit includes a MOS transistor
- the width to length ratio is one N of the width to length ratio of the MOS tube included in the first switching unit 1.
- the width and length ratio of the MOS tube included in the second mirror switching unit are both MOS included in the second switching unit 2.
- the width to length ratio of the tube is one-N.
- the width and length of the MOS tube can affect the magnitude of the current flowing through the MOS transistor.
- the width-to-length ratio of the MOS transistors included in the mirrored third switching unit 3 can be set to one-Nth of the pre-image MOS tube.
- the switch unit composed of the first switch unit 1 and the second switch unit 2 is exemplified by a MOS tube.
- the first switch unit is used.
- the second switching unit 2 can also be composed of other switches, for example, it can also be composed of a triode, which is not limited by the embodiment of the present invention.
- the equivalent resistance of the first switching unit 1 is smaller than the equivalent resistance of the second switching unit 2.
- the equivalent resistance of the first switch unit 1 is less than the equivalent resistance of the second switch unit 2.
- the first switch unit 1 and the second switch unit 2 are both switch units composed of MOS tubes, and the first switch unit 1 includes a MOS tube having a width to length ratio greater than the second switch unit 2, When the width to length ratio of the MOS transistor is used, the equivalent resistance of the first switching unit 1 is smaller than the equivalent resistance of the second switching unit 2.
- the voltage regulating circuit may further include a fourth switching unit 7 including a plurality of switches, the fourth switching unit 7 being connected in series between the second switching unit 2 and the load 6.
- the fourth switching unit 7 is configured to increase the equivalent resistance of the branch where the second switching unit 2 is located to reduce the current flowing through the second switching unit 2.
- a fourth switching unit 7 is connected in series between the second switching unit 2 and the load 6. Specifically, the input end of the fourth switching unit 7 is connected to the output end of the second switching unit 2, and the output end of the fourth switching unit 7 is connected to the load 6.
- the size of the equivalent resistance of the fourth switching unit 7 can be controlled in various manners, and specifically includes the following possible implementation manners:
- the fourth switching unit 7 is connected to the first comparison control unit 4 to control the magnitude of the equivalent resistance of the fourth switching unit 7 by the first bias voltage determined by the first comparison control unit 4. .
- the gate of the fourth switching unit 7 is connected to the output end of the first comparison control unit 4, so that the fourth bias voltage determined and output by the first comparison control unit 4 controls the fourth switch.
- the fourth switching unit 7 is connected to the second comparison control unit 5 to determine the magnitude of the equivalent resistance of the fourth switching unit 7 by the second comparison control unit 5 determining the second bias voltage.
- the gate of the fourth switching unit 7 is connected to the output end of the second comparison control unit 5 to control the fourth switch by the second bias voltage determined and output by the second comparison control unit 5.
- the above is only controlling the magnitude of the equivalent resistance of the fourth open unit 7 by the first bias voltage determined by the first comparison control unit 4, or the second offset determined by the second comparison control unit 5.
- the magnitude of the equivalent resistance of the fourth switching unit 7 is controlled by setting the voltage as an example.
- the voltage regulating circuit may further include a third comparison control unit, and the third comparison control unit is connected to the fourth switching unit 7. In this case, the voltage regulating circuit can pass the The third comparison control unit controls the magnitude of the equivalent resistance of the fourth switching unit 7, which is not limited in the embodiment of the present invention.
- the third switching unit 3 is the second switching unit 2, the first switching unit 1, and the fourth switching unit 7. A mirror image of the interconnected cells.
- the third switch unit 3 includes a first mirror switch unit, a second mirror switch unit, and a fourth mirror switch unit
- the first mirror switch unit includes a switch number of the first switch unit 1 One-ninth of the number of switches included, the number of switches included in the second mirror switch unit is one-Nth of the number of switches included in the second switch unit 2, and the number of switches included in the fourth mirror switch unit is the number
- the four switching unit 7 includes one-Nth of the number of switches.
- the width of the MOS tube included in the first mirror switching unit is one N of the width to length ratio of the MOS tube included in the first switching unit 1.
- the width and length ratio of the MOS tube included in the second mirror switching unit are both MOS tubes included in the second switching unit 2.
- One-ninth of the width-to-length ratio, and the width-to-length ratio of the MOS tube included in the fourth mirror switching unit are one-N of the width-to-length ratio of the MOS tube included in the fourth switching unit 7.
- the voltage regulating circuit provided by the present application outputs the first output voltage to the load when the power source starts to supply power, and the first switching unit and the second switching unit output the first output voltage.
- the voltage regulating circuit may control the first switching unit to perform voltage adjustment through the first comparison control unit, or control the second switching unit to perform voltage adjustment through the second comparison control unit. That is, the voltage regulating circuit can collect the first output voltage by using the first comparison control unit, and control the first switch unit by digital control based on the first output voltage, the first reference voltage, and the second reference voltage.
- the equivalent resistance is sized to regulate the first output voltage.
- the second comparison control unit An output voltage and a second output voltage, and controlling an equivalent resistance of the third switching unit and the second switching unit by an analog control manner based on the first output voltage, the second output voltage, and the third reference voltage, to The first output voltage is adjusted.
- the equivalent resistance of the first switching unit is smaller than the equivalent resistance of the second switching unit, that is, the current flowing through the branch of the first switching unit is greater than the current flowing through the branch of the second switching unit, due to the number
- the first switching unit in the control mode operates in the linear region, so that the first open unit can ensure a large current flowing per unit area, and a wide output current capability is realized.
- the equivalent transconductance of the output of the second switching unit can be improved by using the analog control method, and the transconductance is proportional to the PSRR. Therefore, the control of the branch of the second switching unit is ensured. Higher PSRR.
- the third reference voltage is greater than the second reference voltage and smaller than the first reference voltage, that is, when the first output voltage is greatly disturbed, the voltage is adjusted through the branch of the first switching unit. When a small disturbance occurs in the output voltage, the voltage is adjusted through the branch of the second switching unit.
- the first switching unit adopts a digital control mode, when a small disturbance occurs, the first comparison control unit does not The switch in the first switching unit is controlled to be turned on. Therefore, the branch does not affect the PSRR of the system, that is, the branch does not lower the PSRR of the system.
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Abstract
Description
Claims (9)
- 一种调压电路,其特征在于,所述调压电路包括第一开关单元、第二开关单元、第三开关单元、第一比较控制单元、第二比较控制单元和负载,且所述第一开关单元和所述第二开关单元均具有变压功能;所述第一开关单元和所述第二开关单元均接收来自电源的电压输入,且所述第一开关单元的等效电阻小于所述第二开关单元的等效电阻;所述第一开关单元和所述第二开关单元还分别与所述负载连接,用于将第一输出电压提供给所述负载,所述第一输出电压为所述第一开关单元和所述第二开关单元输出的电压;所述第一比较控制单元与所述第一开关单元连接,用于采集所述第一输出电压,并基于所述第一输出电压、第一参考电压和第二参考电压,确定第一偏置电压,以利用所述第一偏置电压通过数字控制方式控制所述第一开关单元的等效电阻的大小,所述第一参考电压大于所述第二参考电压;所述第二比较控制单元分别与所述第三开关单元和所述第二开关单元连接,用于采集所述第一输出电压和第二输出电压,以及基于所述第一输出电压、所述第二输出电压和第三参考电压确定第二偏置电压,并利用所述第二偏置电压通过模拟控制方式控制所述第三开关单元和所述第二开关单元的等效电阻的大小,所述第三参考电压大于所述第二参考电压且小于所述第一参考电压,所述第三开关单元为所述第二开关单元和所述第一开关单元并联后的单元的镜像,用于输出所述第二输出电压,以消除由于所述负载产生波动给所述第二偏置电压所带来的误差。
- 如权利要求1所述的电路,其特征在于,当所述第一开关单元包括的开关数量大于所述第二开关单元包括的开关数量时,所述第一开关单元的等效电阻小于所述第二开关单元的等效电阻;或者,当所述第一开关单元和所述第二开关单元均为由金属氧化物半导体MOS管构成的开关单元,且所述第一开关单元包括的MOS管的宽长比均大于所述第二开关单元包括的MOS管的宽长比时,所述第一开关单元的等效电阻小于所述第二开关单元的等效电阻。
- 如权利要求1所述的调压电路,其特征在于,所述第三开关单元包括第一镜像开关单元和第二镜像开关单元,所述第一镜像开关单元包括的开关数量为所述第一开关单元包括的开关数量的N分之一,所述第二镜像开关单元包括的开关数量为所述第二开关单元包括的开关数量的N分之一,所述N为大于1的正整数;所述调压电路还包括镜像电阻,所述镜像电阻的大小为所述负载包括的电阻的N分之一。
- 如权利要求1所述的调压电路,其特征在于,当所述第一开关单元和所述第二开关单元均为由金属氧化物半导体MOS管构成的开关单元时,所述第一镜像开关单元包括的MOS管的宽长比均为所述第一开关单元包括的MOS管的宽长比的N分之一,所述第二镜像开关单元包括的MOS管的宽长比均为所述第二开关单元包括的MOS管的宽长比的N分之一。
- 如权利要求1所述的调压电路,其特征在于,所述调压电路还包括第四开关单元,且所述第四开关单元中包括多个开关,所述第四开关单元串联在所述第二开关单元与所述负载之间,所述第四开关单元用于增加所述第二开关单元所在分支的等效电阻,以减小流经所述第二开关单元的电流;相应地,所述第三开关单元为所述第二开关单元、所述第一开关单元和所述第四开关单元三者之间相互连接后的单元的镜像。
- 如权利要求5所述的调压电路,其特征在于,所述第四开关单元与所述第一比较控制单元连接,以通过所述第一比较控制单元确定的第一偏置电压控制所述第四开关单元的等效电阻的大小。
- 如权利要求5所述的调压电路,其特征在于,所述第四开关单元与所述第二比较控制单元连接,以通过所述第二比较控制单元确定的第二偏置电压控制所述第四开关单元的等效电阻的大小。
- 如权利要求1所述的调压电路,其特征在于,当所述第一比较控制单元包括窗口比较器时,所述窗口比较器用于:当所述第一输出电压大于所述第一参考电压时,基于所述第一参考电压和所述第一输出电压确定所述第一偏置电压;当所述第一输出电压小于所述第二参考电压时,基于所述第二参考电压和所述第一输出电压确定所述第一偏置电压。
- 如权利要求1所述的调压电路,其特征在于,所述第二比较控制单元包括第一放大模块、第二放大模块和第三放大模块,所述第一放大模块分别与所述第二放大模块和所述第三放大模块连接,所述第二放大模块与所述第三放大模块连接后与所述第二开关单元连接;所述调压电路还包括反馈补偿单元,所述反馈补偿单元与所述第二开关单元、所述第二放大模块和所述第三放大模块分别连接,用于通过所述反馈补偿单元包括的反馈补偿电容对所述第二放大模块所在支路以及所述第三放大模块所在支路进行反馈补偿。
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EP17921858.1A EP3672052A4 (en) | 2017-08-16 | 2017-08-16 | VOLTAGE REGULATION CIRCUIT |
CN201780003325.7A CN110168894B (zh) | 2017-08-16 | 2017-08-16 | 一种调压电路 |
KR1020197024037A KR102247386B1 (ko) | 2017-08-16 | 2017-08-16 | 전압 조정 회로 |
US16/559,959 US10984839B2 (en) | 2017-08-16 | 2019-09-04 | Voltage regulation circuit |
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US11112813B2 (en) * | 2019-11-28 | 2021-09-07 | Shenzhen GOODIX Technology Co., Ltd. | Distributed low-dropout voltage regulator (LDO) with uniform power delivery |
CN112018840B (zh) * | 2020-07-30 | 2022-02-25 | 上海芯导电子科技股份有限公司 | 一种微小电流和容性负载的检测电路 |
EP3951551B1 (en) * | 2020-08-07 | 2023-02-22 | Scalinx | Voltage regulator and method |
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US20210166735A1 (en) | 2021-06-03 |
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JP2020507860A (ja) | 2020-03-12 |
KR20190103405A (ko) | 2019-09-04 |
US20190392871A1 (en) | 2019-12-26 |
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