JP6757857B2 - 電圧調整回路 - Google Patents
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- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
- G05F1/10—Regulating voltage or current
- G05F1/46—Regulating voltage or current wherein the variable actually regulated by the final control device is dc
- G05F1/56—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices
- G05F1/59—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices including plural semiconductor devices as final control devices for a single load
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- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
- G05F1/10—Regulating voltage or current
- G05F1/46—Regulating voltage or current wherein the variable actually regulated by the final control device is dc
- G05F1/56—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices
- G05F1/563—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices including two stages of regulation at least one of which is output level responsive, e.g. coarse and fine regulation
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- G—PHYSICS
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- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
- G11C5/147—Voltage reference generators, voltage or current regulators; Internally lowered supply levels; Compensation for voltage drops
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- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
- G05F1/10—Regulating voltage or current
- G05F1/46—Regulating voltage or current wherein the variable actually regulated by the final control device is dc
- G05F1/56—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices
- G05F1/575—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices characterised by the feedback circuit
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- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
- G05F1/10—Regulating voltage or current
- G05F1/46—Regulating voltage or current wherein the variable actually regulated by the final control device is dc
- G05F1/56—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices
- G05F1/59—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices including plural semiconductor devices as final control devices for a single load
- G05F1/595—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices including plural semiconductor devices as final control devices for a single load semiconductor devices connected in series
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- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
- G05F3/02—Regulating voltage or current
- G05F3/08—Regulating voltage or current wherein the variable is dc
- G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
- G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
- G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
- G05F3/26—Current mirrors
- G05F3/262—Current mirrors using field-effect transistors only
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/4074—Power supply or voltage generation circuits, e.g. bias voltage generators, substrate voltage generators, back-up power, power control circuits
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/30—Power supply circuits
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/02—Arrangements for writing information into, or reading information out from, a digital store with means for avoiding parasitic signals
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/0045—Converters combining the concepts of switch-mode regulation and linear regulation, e.g. linear pre-regulator to switching converter, linear and switching converter in parallel, same converter or same transistor operating either in linear or switching mode
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M3/00—Conversion of dc power input into dc power output
- H02M3/02—Conversion of dc power input into dc power output without intermediate conversion into ac
- H02M3/04—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters
- H02M3/10—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M3/145—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
- H02M3/155—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
- H02M3/156—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M3/00—Conversion of dc power input into dc power output
- H02M3/22—Conversion of dc power input into dc power output with intermediate conversion into ac
- H02M3/24—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters
- H02M3/28—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac
- H02M3/325—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal
- H02M3/335—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only
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Description
1:第1のスイッチユニット、2:第2のスイッチユニット、3:第3のスイッチユニット、4:第1の比較及び制御ユニット、5:第2の比較及び制御ユニット、6:負荷、7:第4のスイッチユニット、8:フィードバック補償ユニット
41:ウインドウコンパレータ
51:第1の増幅器、52:第2の増幅器
G1:第1の増幅モジュール、G2:第2の増幅モジュール、及びG3:第3の増幅モジュール
この出願の目的、技術的解決策及び利点をより明確にするために、以下に、添付図面を参照して、この出願の実現方式を詳細に更に説明する。
Claims (9)
- 電圧調整回路であって、
前記電圧調整回路は、第1のスイッチユニットと、第2のスイッチユニットと、第3のスイッチユニットと、第1の比較及び制御ユニットと、第2の比較及び制御ユニットと、負荷とを含み、前記第1のスイッチユニット及び前記第2のスイッチユニットの双方は電圧変換の能力を有し、
前記第1のスイッチユニット及び前記第2のスイッチユニットの双方は、電源から電圧入力を受け取り、前記第1のスイッチユニットの等価抵抗は、前記第2のスイッチユニットの等価抵抗よりも小さく、
前記第1のスイッチユニット及び前記第2のスイッチユニットは、前記負荷にそれぞれ接続され、第1の出力電圧を前記負荷に提供するように構成され、前記第1の出力電圧は、前記第1のスイッチユニット及び前記第2のスイッチユニットにより出力される電圧であり、
前記第1の比較及び制御ユニットは、前記第1のスイッチユニットに接続され、前記第1の出力電圧を収集し、前記第1の出力電圧、第1の基準電圧及び第2の基準電圧に基づいて第1のバイアス電圧を決定し、前記第1のバイアス電圧を使用することによりデジタル制御モードを使用して前記第1のスイッチユニットの前記等価抵抗の値を制御するように構成され、前記第1の基準電圧は、前記第2の基準電圧よりも大きく、
前記第2の比較及び制御ユニットは、前記第3のスイッチユニット及び前記第2のスイッチユニットに接続され、前記第1の出力電圧及び第2の出力電圧を収集し、前記第1の出力電圧、前記第2の出力電圧及び第3の基準電圧に基づいて第2のバイアス電圧を決定し、前記第2のバイアス電圧を使用することによりアナログ制御を通じて前記第3のスイッチユニット及び前記第2のスイッチユニットの等価抵抗の値を制御するように構成され、前記第3の基準電圧は、前記第2の基準電圧よりも大きく、前記第1の基準電圧よりも小さく、前記第3のスイッチユニットは、前記第2のスイッチユニット及び前記第1のスイッチユニットが並列に接続された後に得られるユニットのミラーであり、前記第2の出力電圧を出力するように構成される、電圧調整回路。 - 前記第1のスイッチユニットに含まれるスイッチの数が前記第2のスイッチユニットに含まれるスイッチの数よりも大きいとき、前記第1のスイッチユニットの前記等価抵抗は、前記第2のスイッチユニットの前記等価抵抗よりも小さいか、或いは
前記第1のスイッチユニット及び前記第2のスイッチユニットの双方が金属酸化物半導体MOSトランジスタを含むスイッチユニットであり、前記第1のスイッチユニットに含まれる前記MOSトランジスタのW/L比が前記第2のスイッチユニットに含まれる前記MOSトランジスタのアスペクト比よりも大きいとき、前記第1のスイッチユニットの前記等価抵抗は、前記第2のスイッチユニットの前記等価抵抗よりも小さい、請求項1に記載の電圧調整回路。 - 前記第3のスイッチユニットは、第1のミラースイッチユニットと、第2のミラースイッチユニットとを含み、前記第1のミラースイッチユニットに含まれるスイッチの数は、前記第1のスイッチユニットに含まれるスイッチの数の1/Nであり、前記第2のミラースイッチユニットに含まれるスイッチの数は、前記第2のスイッチユニットに含まれるスイッチの数の1/Nであり、Nは、1よりも大きい正の整数であり、
前記電圧調整回路は、ミラー抵抗器を更に含み、前記ミラー抵抗器の値は、前記負荷に含まれる抵抗の1/Nである、請求項1又は2に記載の電圧調整回路。 - 前記第1のスイッチユニット及び前記第2のスイッチユニットの双方が金属酸化物半導体MOSトランジスタを含むスイッチユニットであるとき、前記第1のミラースイッチユニットに含まれるMOSトランジスタのアスペクト比は、前記第1のスイッチユニットに含まれる前記MOSトランジスタのアスペクト比の1/Nであり、前記第2のミラースイッチユニットに含まれるMOSトランジスタのアスペクト比は、前記第2のスイッチユニットに含まれる前記MOSトランジスタのアスペクト比の1/Nである、請求項3に記載の電圧調整回路。
- 前記電圧調整回路は、第4のスイッチユニットを更に含み、前記第4のスイッチユニットは、複数のスイッチを含み、前記第4のスイッチユニットは、前記第2のスイッチユニットと前記負荷との間に直列に接続され、
対応して、前記第3のスイッチユニットは、前記第2のスイッチユニット、前記第1のスイッチユニット及び前記第4のスイッチユニットが互いに接続された後に得られるユニットのミラーである、請求項1乃至4のうちいずれか1項に記載の電圧調整回路。 - 前記第4のスイッチユニットは、前記第1の比較及び制御ユニットに接続され、それにより、前記第4のスイッチユニットの等価抵抗の値は、前記第1の比較及び制御ユニットにより決定された前記第1のバイアス電圧を使用することにより制御される、請求項5に記載の電圧調整回路。
- 前記第4のスイッチユニットは、前記第2の比較及び制御ユニットに接続され、それにより、前記第4のスイッチユニットの等価抵抗の値は、前記第2の比較及び制御ユニットにより決定された前記第2のバイアス電圧を使用することにより制御される、請求項5に記載の電圧調整回路。
- 前記第1の比較及び制御ユニットがウインドウコンパレータを含むとき、前記ウインドウコンパレータは、
前記第1の出力電圧が前記第1の基準電圧よりも大きいとき、前記第1の基準電圧及び前記第1の出力電圧に基づいて前記第1のバイアス電圧を決定するように、或いは前記第1の出力電圧が前記第2の基準電圧よりも小さいとき、前記第2の基準電圧及び前記第1の出力電圧に基づいて前記第1のバイアス電圧を決定するように構成される、請求項1乃至7のうちいずれか1項に記載の電圧調整回路。 - 前記第2の比較及び制御ユニットは、第1の増幅モジュールと、第2の増幅モジュールと、第3の増幅モジュールとを含み、前記第1の増幅モジュールは、前記第2の増幅モジュール及び前記第3の増幅モジュールに接続され、前記第2の増幅モジュールの出力ノードは、前記第2のスイッチユニット及び前記第3の増幅モジュールの出力ノードにそれぞれ接続され、
前記電圧調整回路は、フィードバック補償ユニットを更に含み、前記フィードバック補償ユニットは、前記第2のスイッチユニット、前記第2の増幅モジュール及び前記第3の増幅モジュールに接続され、前記フィードバック補償ユニットに含まれるフィードバック補償キャパシタを使用することにより、前記第2の増幅モジュールが位置する分岐及び前記第3の増幅モジュールが位置する分岐に対してフィードバック補償を実行するように構成される、請求項1乃至8のうちいずれか1項に記載の電圧調整回路。
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US11112813B2 (en) * | 2019-11-28 | 2021-09-07 | Shenzhen GOODIX Technology Co., Ltd. | Distributed low-dropout voltage regulator (LDO) with uniform power delivery |
CN112018840B (zh) * | 2020-07-30 | 2022-02-25 | 上海芯导电子科技股份有限公司 | 一种微小电流和容性负载的检测电路 |
EP3951551B1 (en) * | 2020-08-07 | 2023-02-22 | Scalinx | Voltage regulator and method |
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JP2833073B2 (ja) * | 1989-11-28 | 1998-12-09 | 日本電気株式会社 | 出力バッファ回路 |
US6304131B1 (en) * | 2000-02-22 | 2001-10-16 | Texas Instruments Incorporated | High power supply ripple rejection internally compensated low drop-out voltage regulator using PMOS pass device |
JP4538969B2 (ja) * | 2001-02-19 | 2010-09-08 | 富士電機システムズ株式会社 | シリーズレギュレータ回路 |
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2017
- 2017-08-16 CN CN201780003325.7A patent/CN110168894B/zh active Active
- 2017-08-16 WO PCT/CN2017/097690 patent/WO2019033304A1/zh unknown
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- 2017-08-16 EP EP17921858.1A patent/EP3672052A4/en active Pending
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US10984839B2 (en) | 2021-04-20 |
US11120845B2 (en) | 2021-09-14 |
EP3672052A4 (en) | 2020-08-19 |
CN110168894B (zh) | 2020-07-28 |
CN110168894A (zh) | 2019-08-23 |
US20190392871A1 (en) | 2019-12-26 |
US20210166735A1 (en) | 2021-06-03 |
WO2019033304A1 (zh) | 2019-02-21 |
JP2020507860A (ja) | 2020-03-12 |
KR20190103405A (ko) | 2019-09-04 |
EP3672052A1 (en) | 2020-06-24 |
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