WO2019003605A1 - 真空蒸着用のマスクの洗浄方法及びリンス組成物 - Google Patents
真空蒸着用のマスクの洗浄方法及びリンス組成物 Download PDFInfo
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- WO2019003605A1 WO2019003605A1 PCT/JP2018/016296 JP2018016296W WO2019003605A1 WO 2019003605 A1 WO2019003605 A1 WO 2019003605A1 JP 2018016296 W JP2018016296 W JP 2018016296W WO 2019003605 A1 WO2019003605 A1 WO 2019003605A1
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- Prior art keywords
- mask
- cleaning
- composition
- hfe
- rinse
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- HCDGVLDPFQMKDK-UHFFFAOYSA-N hexafluoropropylene Chemical compound FC(F)=C(F)C(F)(F)F HCDGVLDPFQMKDK-UHFFFAOYSA-N 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229940035429 isobutyl alcohol Drugs 0.000 description 1
- 150000002576 ketones Chemical class 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- YKYONYBAUNKHLG-UHFFFAOYSA-N n-Propyl acetate Natural products CCCOC(C)=O YKYONYBAUNKHLG-UHFFFAOYSA-N 0.000 description 1
- IBHBKWKFFTZAHE-UHFFFAOYSA-N n-[4-[4-(n-naphthalen-1-ylanilino)phenyl]phenyl]-n-phenylnaphthalen-1-amine Chemical compound C1=CC=CC=C1N(C=1C2=CC=CC=C2C=CC=1)C1=CC=C(C=2C=CC(=CC=2)N(C=2C=CC=CC=2)C=2C3=CC=CC=C3C=CC=2)C=C1 IBHBKWKFFTZAHE-UHFFFAOYSA-N 0.000 description 1
- TVMXDCGIABBOFY-UHFFFAOYSA-N octane Chemical compound CCCCCCCC TVMXDCGIABBOFY-UHFFFAOYSA-N 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 239000012044 organic layer Substances 0.000 description 1
- 239000005416 organic matter Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- BNIXVQGCZULYKV-UHFFFAOYSA-N pentachloroethane Chemical compound ClC(Cl)C(Cl)(Cl)Cl BNIXVQGCZULYKV-UHFFFAOYSA-N 0.000 description 1
- 229960004624 perflexane Drugs 0.000 description 1
- KAVGMUDTWQVPDF-UHFFFAOYSA-N perflubutane Chemical compound FC(F)(F)C(F)(F)C(F)(F)C(F)(F)F KAVGMUDTWQVPDF-UHFFFAOYSA-N 0.000 description 1
- 229950003332 perflubutane Drugs 0.000 description 1
- LGUZHRODIJCVOC-UHFFFAOYSA-N perfluoroheptane Chemical compound FC(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)F LGUZHRODIJCVOC-UHFFFAOYSA-N 0.000 description 1
- ZJIJAJXFLBMLCK-UHFFFAOYSA-N perfluorohexane Chemical compound FC(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)F ZJIJAJXFLBMLCK-UHFFFAOYSA-N 0.000 description 1
- YVBBRRALBYAZBM-UHFFFAOYSA-N perfluorooctane Chemical compound FC(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)F YVBBRRALBYAZBM-UHFFFAOYSA-N 0.000 description 1
- NJCBUSHGCBERSK-UHFFFAOYSA-N perfluoropentane Chemical compound FC(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)F NJCBUSHGCBERSK-UHFFFAOYSA-N 0.000 description 1
- ZUOUZKKEUPVFJK-UHFFFAOYSA-N phenylbenzene Natural products C1=CC=CC=C1C1=CC=CC=C1 ZUOUZKKEUPVFJK-UHFFFAOYSA-N 0.000 description 1
- 239000001294 propane Substances 0.000 description 1
- 229940090181 propyl acetate Drugs 0.000 description 1
- 230000007261 regionalization Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- YYMBJDOZVAITBP-UHFFFAOYSA-N rubrene Chemical compound C1=CC=CC=C1C(C1=C(C=2C=CC=CC=2)C2=CC=CC=C2C(C=2C=CC=CC=2)=C11)=C(C=CC=C2)C2=C1C1=CC=CC=C1 YYMBJDOZVAITBP-UHFFFAOYSA-N 0.000 description 1
- 229930195734 saturated hydrocarbon Natural products 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 150000003967 siloles Chemical class 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 229950011008 tetrachloroethylene Drugs 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000004448 titration Methods 0.000 description 1
- KFUSEUYYWQURPO-OWOJBTEDSA-N trans-1,2-dichloroethene Chemical group Cl\C=C\Cl KFUSEUYYWQURPO-OWOJBTEDSA-N 0.000 description 1
- TVIVIEFSHFOWTE-UHFFFAOYSA-K tri(quinolin-8-yloxy)alumane Chemical compound [Al+3].C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1 TVIVIEFSHFOWTE-UHFFFAOYSA-K 0.000 description 1
- 125000006617 triphenylamine group Chemical class 0.000 description 1
- 238000004506 ultrasonic cleaning Methods 0.000 description 1
- 229930195735 unsaturated hydrocarbon Natural products 0.000 description 1
- NQPDZGIKBAWPEJ-UHFFFAOYSA-N valeric acid Chemical compound CCCCC(O)=O NQPDZGIKBAWPEJ-UHFFFAOYSA-N 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/28—Organic compounds containing halogen
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/32—Organic compounds containing nitrogen
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/32—Organic compounds containing nitrogen
- C11D7/3263—Amides or imides
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/32—Organic compounds containing nitrogen
- C11D7/3281—Heterocyclic compounds
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/50—Solvents
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/04—Coating on selected surface areas, e.g. using masks
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/04—Coating on selected surface areas, e.g. using masks
- C23C14/042—Coating on selected surface areas, e.g. using masks using masks
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23G—CLEANING OR DE-GREASING OF METALLIC MATERIAL BY CHEMICAL METHODS OTHER THAN ELECTROLYSIS
- C23G5/00—Cleaning or de-greasing metallic material by other methods; Apparatus for cleaning or de-greasing metallic material with organic solvents
- C23G5/02—Cleaning or de-greasing metallic material by other methods; Apparatus for cleaning or de-greasing metallic material with organic solvents using organic solvents
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/10—Apparatus or processes specially adapted to the manufacture of electroluminescent light sources
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
- H10K71/166—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using selective deposition, e.g. using a mask
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
- C11D2111/10—Objects to be cleaned
- C11D2111/14—Hard surfaces
- C11D2111/22—Electronic devices, e.g. PCBs or semiconductors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
- H10K71/164—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using vacuum deposition
Definitions
- the present invention relates to a mask cleaning method and rinse composition for vacuum deposition.
- a display device provided with a liquid crystal display device and an organic EL element has attracted attention as a flat panel display.
- Liquid crystal display devices require low power consumption, but need external light (backlight) to obtain a bright screen.
- the display device provided with the organic EL element since the organic EL element is a self-light emitting element, a backlight as in the liquid crystal display device is not necessary. Therefore, the display device provided with the organic EL element has a feature of power saving, and further has a feature of high luminance and a wide viewing angle.
- the organic EL element has a functional layer including a light emitting layer made of an organic compound between an anode and a cathode.
- a vapor phase process also referred to as a dry method
- a vacuum evaporation method or a liquid phase process (wet method) using a solution in which a functional layer forming material is dissolved or dispersed in a solvent
- a coating method see, for example, Patent Documents 1 to 3).
- a mask When forming a functional layer by vacuum evaporation, a mask is brought close to the substrate, and the cathode, the hole injection layer, the hole transport layer, the light emitting layer, the electron transport layer, and the anode are patterned through the mask.
- the deposition mask used for this purpose in particular for fine patterning of the RGB layer, is difficult to manufacture due to its high definition, and is also very expensive.
- Patent Document 4 describes that the mask is rinsed with a cleaning solution composition and then rinsed with a hydrofluoroether.
- "Novec HFE 7100" C 4 F 9 OCH 3 ) used as a rinse solution in Patent Document 4 is decomposed in the presence of, for example, N-methyl-2-pyrrolidinone or N, N-dimethylformamide, Ions are generated (see, for example, Patent Document 5). Therefore, in the above method, the mask surface may not be cleaned cleanly.
- JP 2002-110345 A Unexamined-Japanese-Patent No. 2002-305079 Japanese Patent Application Laid-Open No. 2002-313564 JP, 2005-162947, A Japanese Patent Publication 2009-518857
- the present invention has been made to solve the above-mentioned problems, and is a method of cleaning a mask used in a vacuum deposition process at the time of manufacturing an organic EL device, for example, which rinses the mask cleaned by the cleaning composition. It is an object of the present invention to provide a cleaning method and a rinse composition which can clean the mask extremely cleanly without the decomposition of the active ingredient of the rinse composition when rinsing with a substance.
- the cleaning method of the embodiment is a cleaning method of a mask for vacuum evaporation, and the mask includes at least one selected from N-methyl-2-pyrrolidinone (NMP) and N, N-dimethylformamide (DMF).
- NMP N-methyl-2-pyrrolidinone
- DMF N, N-dimethylformamide
- the content ratio of the hydrofluoroether in the rinse composition is preferably 80% by mass or more and 100% by mass or less.
- the cleaning composition preferably contains N-methyl-2-pyrrolidinone.
- the rinse composition preferably comprises CF 3 CH 2 —O—CF 2 CHF 2 .
- the cleaning method of the embodiment it is preferable to carry out both cleaning and rinsing of the mask at 10 ° C. or more and 40 ° C. or less, more preferably at 20 ° C. or more and 30 ° C. or less.
- vacuum deposition is preferably performed in the production of a low molecular weight organic EL device.
- the cleaning method of the embodiment it is preferable to dry the mask after rinsing with the rinse composition.
- the rinse composition according to the embodiment is a rinse composition for rinsing a mask for vacuum deposition cleaned with a cleaning composition including at least one selected from N-methyl-2-pyrrolidinone and N, N-dimethylformamide. Selected from CF 3 CH 2 -O-CF 2 CHF 2 , CHF 2 CF 2 -O-CH 3 , CHF 2 -O-CH 2 CF 2 CHF 2 and CF 3 CHFCF 2 -O-CH 2 CF 3 Characterized in that it comprises at least one hydrofluoroether.
- the ratio of content of the said hydrofluoroether in the rinse composition of embodiment is 80 to 100 mass%.
- the abbreviation of the compound may be written in parentheses after the compound name, and the abbreviation is used in place of the compound name as necessary. Further, in the present specification, the symbol “to” represents a range equal to or higher than the numerical value described before, and lower than the numerical value described thereafter.
- the cleaning method and the rinse composition of the present embodiment for example, in cleaning the mask used in the vacuum deposition step at the time of manufacturing the organic EL element, when the mask cleaned by the cleaning composition is rinsed with the rinse composition
- the mask can be cleaned very cleanly, without decomposition of the active ingredients of the rinse composition.
- the cleaning method of the present embodiment is, for example, a method of cleaning a mask used in a vacuum deposition process at the time of manufacturing an organic EL element, and includes a cleaning process, a rinse process, and a drying process.
- the cleaning method of this embodiment in the cleaning step, the mask is cleaned with a cleaning composition containing at least one selected from N-methyl-2-pyrrolidinone and N, N-dimethylformamide.
- the rinse composition comprising the cleaning composition and the at least one hydrofluoroether selected from HFE-347 pc-f, HFE-254 pc, HFE-356 pcf and HFE-449 mec-f after cleaning the mask Rinse by Thereafter, a drying step is carried out if necessary, and the mask is dried.
- the above-mentioned specific hydrofluoroether contained in the rinse composition is decomposed even in the presence of N-methyl-2-pyrrolidinone or N, N-dimethylformamide in the cleaning composition. Hateful. Therefore, even when the cleaning composition remains on the mask after cleaning, the above-mentioned specific hydrofluoroether in the rinse composition is not decomposed by the cleaning composition and does not generate fluorine ions. Therefore, the mask surface can be cleaned extremely cleanly.
- the mask to be cleaned in the cleaning method of the present embodiment is, for example, one used in a vacuum deposition process in the manufacturing process of the organic EL display device described below.
- the vacuum evaporation process using a mask is outlined with reference to FIG. 1 and FIG. 2 about the manufacturing method of an organic electroluminescence display.
- a TFT thin film transistor
- a transparent electrode is formed on a glass substrate, and a hole transport layer is further formed.
- the glass substrate 1 on which the TFT, the transparent electrode and the hole transport layer are formed is carried into the vacuum chamber with the surface to be treated of the glass substrate 1 facing downward.
- light emitting layers corresponding to the respective primary colors R, G and B as color display devices are formed on the glass substrate 1. This process takes place in separate chambers corresponding to each primary color R, G, B as a color display.
- the glass substrate 1 includes a vacuum chamber for forming a light emitting layer corresponding to the primary color R, a vacuum chamber for forming a light emitting layer corresponding to the primary color G, and a vacuum for forming a light emitting layer corresponding to the primary color B. It is sequentially transported to the chamber.
- a mask 20 which has been opened in advance according to the shape of the light emitting layer is disposed in the manner shown in FIG.
- the mask 20 is fixed by a mask frame 21 disposed on the holding table 24.
- each vacuum chamber as the mask 20, a mask in which only a portion corresponding to the transparent electrode (anode) 11 used for light emission of a predetermined primary color corresponding to any primary color of R, G, B is opened It is equipped. Thereby, in each chamber, the light emitting layer corresponding to each primary color can be formed at a predetermined position.
- the material of the light emitting layer (organic EL material) is heated and evaporated from a vapor deposition source (source) 30 disposed below the holding table 24 so that the surface of the glass substrate 1 passes through the opening of the mask.
- the same material is deposited on
- the formation mode of the light emitting layer through the mask 20 is schematically shown in FIG.
- the mask 20 covers the regions other than the formation regions of the transparent electrodes corresponding to the corresponding primary colors in each chamber.
- the organic EL material corresponding to the corresponding primary color is heated in the source 30, vaporized, and vapor-deposited on the glass substrate 1 (more precisely, the hole transport layer thereof) through the opening 20h of the mask 20.
- the material of the mask may, for example, be a stainless steel such as SUS, a simple substance of Ni, an alloy of Ni (for example, Fe-Ni alloy, Mg-Ni alloy), or a semiconductor such as silicon.
- a vapor deposition material various organic substances made of a vapor deposition material adhere to the mask.
- the hole injection material used when manufacturing an organic EL element other than the said organic EL material a hole transport material, an electron transport material etc. are mentioned.
- As a hole injection material copper phthalocyanine (CuPC), poly (3,4-ethylenedioxythiophene) (PEDOT) and polystyrene sulfonic acid (PSS) composite (PEDOT / PSS), 4,4 ′, 4 ′ ′ -Tris [phenyl (m-tolyl) amino] triphenylamine (m-MTDATA) and the like.
- CuPC copper phthalocyanine
- PEDOT poly (3,4-ethylenedioxythiophene)
- PSS polystyrene sulfonic acid
- PEDOT / PSS 4,4 ′, 4 ′ ′ -Tris [phenyl (m-tolyl) amino] triphenylamine (m-MTDATA
- hole transport material examples include triphenylamines (TPD), diphenyl / naphthyldiamine ( ⁇ -NPD), tris (4-carbazoyl-9-ylphenyl) amine (TCTA) and the like.
- TPD triphenylamines
- ⁇ -NPD diphenyl / naphthyldiamine
- TCTA tris (4-carbazoyl-9-ylphenyl) amine
- organic EL materials include bis-styrylbenzene derivatives, tris (8-quinolinolato) aluminum (Alq 3 ), bis [2- (2-benzoxazolyl) phenolato] zinc (II) (Zn-PBO), rubrene, dimethyl Quinacridone, N, N'-dimethylquinacridone (DMQ), 4- (dicyanomethylene) -2-methyl-6- [2- (2,3,6,7-tetrahydro-1H, 5H-benzo [ij] quinolizine- 9-yl) vinyl] -4H-pyran (DCM2) and the like.
- Alq 3 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP), 2-phenyl-5- (4-biphenylyl) -1,3,4-oxadi And azoles (PBD), silole derivatives and the like.
- the organic substance attached to the mask is washed with a washing composition containing at least one selected from N-methyl-2-pyrrolidinone and N, N-dimethylformamide.
- a washing composition containing at least one selected from N-methyl-2-pyrrolidinone and N, N-dimethylformamide.
- the cleaning method there are a method of immersing the mask in the cleaning composition, a method of spraying the cleaning composition onto the mask by a jet water flow, and the like.
- ultrasonic cleaning may be used in combination with the mask cleaning, whereby the dissolution ability can be improved and the cleaning time can be shortened.
- the washing composition used in the washing step preferably contains N-methyl-2-pyrrolidinone from the viewpoint of washing properties.
- the content ratio of N-methyl-2-pyrrolidinone or N, N-dimethylformamide in the cleaning composition used in the cleaning step is preferably 80 to 100% by mass from the viewpoint of sufficient cleaning of the mask, 95 It is more preferable that the amount is -100% by mass, and further preferably 98 to 100% by mass.
- the cleaning composition contains both N-methyl-2-pyrrolidinone and N, N-dimethylformamide, the total content thereof is preferably in the above-mentioned preferable range in that the mask can be sufficiently washed.
- the cleaning composition may contain components other than N-methyl-2-pyrrolidinone and N, N-dimethylformamide as long as the effects of the present embodiment are not impaired.
- Such components are, for example, saturated hydrocarbons such as heptane, hexane, heptane, octane, nonane, cyclobutane, cyclopentane, cyclohexane, cyclohexane, etc., 1-butene, 2-butene, 2-methylpropene, 1-pentene, Unsaturated hydrocarbons such as 2-pentene, 1-butyne, 2-butyne, pentyne, cyclopropene, cyclobutene, cyclopentene, cyclohexene, etc., methanol, ethanol, normal propyl alcohol, isopropyl alcohol, normal butyl alcohol, isobutyl alcohol, sec- Alcohols such as butyl alcohol and tert-butyl alcohol
- the content ratio thereof is preferably 20% by mass or less, more preferably 5% by mass or less, and 2 It is further preferable that the content is at most mass%.
- the components other than N-methyl-2-pyrrolidinone and N, N-dimethylformamide contained in the cleaning composition may be components which do not exert the cleaning effect, as described above.
- the cleaning composition contains water, the water may adhere to the mask surface to cause stains or the detergency of the solvent composition may be reduced. Therefore, the water contained in the cleaning composition may be contained. 5 mass% or less is preferable, 3 mass% or less is more preferable, and 1 mass% or less is more preferable. It is particularly preferred that the cleaning composition does not contain water.
- the time for performing the cleaning step may be, for example, 5 to 15 minutes, although it depends on the size of the mask and the type and amount of the deposited organic matter.
- the temperature of the cleaning composition in the cleaning step may be normal temperature without temperature control, preferably 10 to 40 ° C., and more preferably 20 to 30 ° C.
- the cleaning composition containing at least one selected from N-methyl-2-pyrrolidinone and N, N-dimethylformamide in the above temperature range the cleaning property is excellent and the cleaning time is improved.
- the heat does not cause deformation or distortion of the mask.
- one or more types of organic substances attached to the surface of various masks can be sufficiently removed only by the cleaning composition described above. Therefore, as a result of not requiring a different type of cleaning bath, the cleaning process becomes very simple.
- the cleaning composition can be reused by distilling the used cleaning solution composition. Even when the cleaning composition contains components other than N-methyl-2-pyrrolidinone and N, N-dimethylformamide, the used cleaning solution is distilled to adjust the composition of the recovered liquid. It can be used.
- the mask cleaned by the cleaning composition is rinsed by the rinse composition.
- rinsing means removing the cleaning composition attached to the mask that has been cleaned by the cleaning composition.
- a method of immersing the mask after cleaning in the rinse composition As a method of rinsing the mask after cleaning, a method of immersing the mask after cleaning in the rinse composition, a method of flowing the rinse composition over the mask after cleaning, and the like can be mentioned.
- the time for performing the rinsing step may be, for example, 5 to 15 minutes, depending on the size of the mask and the like.
- the temperature of the rinse composition in the rinse step may be normal temperature without temperature control, preferably 10 to 40 ° C., and more preferably 20 to 30 ° C. Thus, since the rinse can be performed at a relatively low temperature, deformation, distortion, and the like of the mask due to heat do not occur.
- the rinse composition contains at least one hydrofluoroether selected from HFE-347 pc-f, HFE-254 pc, HFE-356 pcf and HFE-449 mec-f as active ingredients.
- Each of HFE-347 pc-f, HFE-254 pc, HFE-356 pcf and HFE-449 mec-f has a low boiling point of 74 ° C. or less, has excellent drying properties, and easily evaporates even at room temperature. In addition, even if it is boiled to become steam, it is hard to adversely affect parts susceptible to heat such as resin parts.
- the rinse composition may be used alone or in combination of two or more of the above-mentioned hydrofluoroethers.
- HFE-347pc-f has a zero ozone depletion potential and a small global warming potential.
- HFE-347 pc-f has a boiling point of about 56 ° C.
- HFE-347pc-f is, for example, a method of reacting 2,2,2-trifluoroethanol with tetrafluoroethylene in the presence of an aprotic polar solvent and a catalyst (alkali metal alkoxide or alkali metal hydroxide) (See WO 2004/108644).
- a catalyst alkali metal alkoxide or alkali metal hydroxide
- HFE-254 pc has a zero ozone depletion potential and a low global warming potential.
- the boiling point of HFE-254 pc is 37 ° C.
- HFE-254 pc can be produced, for example, by a method of adding tetrafluoroethylene to methanol in the coexistence of a strong alkali (eg, potassium hydroxide).
- a strong alkali eg, potassium hydroxide
- HFE-356 pcf has a zero ozone depletion potential and a low global warming potential.
- the boiling point of HFE-356 pcf is 74 ° C.
- HFE-356 pcf can be produced, for example, by a method of adding chlorodifluoromethane (HCFC-22) to tetrafluoropropanol (TFPO) in the presence of a strong alkali (eg, potassium hydroxide).
- HCFC-22 chlorodifluoromethane
- TFPO tetrafluoropropanol
- HFE-449mec-f has a zero ozone depletion potential and a small global warming potential.
- the boiling point of HFE-449mec-f is 73 ° C.
- HFE-449mec-f for example, a method of reacting 2,2,2-trifluoroethanol with hexafluoropropene in the presence of an aprotic polar solvent and a catalyst (alkali metal alkoxide or alkali metal hydroxide) (See JP-A-9-263559).
- N-methyl-2-pyrrolidinone and N, N-dimethylformamide in the cleaning composition have excellent solubility for any of the hydrofluoroethers in the rinse composition. As such, the cleaning composition is very easily removed by the rinse composition. Also, the hydrofluoroether is not decomposed by any of N-methyl-2-pyrrolidinone and N, N-dimethylformamide contained in the cleaning composition. Therefore, fluorine ions do not remain on the surface of the mask after rinsing, and the mask can be cleaned extremely cleanly.
- hydrofluoroethers having a strong electron-withdrawing CF 3 -group such as methyl-perfluoro-n-butyl ether (C 4 F 9 OCH 3 , HFE-449sl), are bonded with CF 3 -groups. Carbon is short of electrons.
- a bondable atom such as a halogen atom or a group is bonded to carbon bonded to CF 3 -group, it is subjected to nucleophilic attack by N-methyl-2-pyrrolidinone or N, N-dimethylformamide It becomes easy to disassemble.
- hydrofluoroether rinse composition used in the present embodiment CF 3 - or not have a group, or CF 3 - have a group CF 3 - is a leaving the carbon bonded Detachable atoms or atomic groups are not bonded. Therefore, it is difficult for the charge in the molecule to be biased, and less susceptible to nucleophilic attack from N-methyl-2-pyrrolidinone and N, N-dimethylformamide.
- the rinse composition used in the cleaning method of the present embodiment preferably contains HFE-347 pc-f from the viewpoint that the cleaning composition can be sufficiently removed and the drying property is excellent.
- the content ratio of the above-mentioned hydrofluoroether in the rinse composition used in the cleaning method of the present embodiment is preferably 80 to 100% by mass, and is 95 to 100% by mass from the viewpoint that the mask can be sufficiently rinsed. Is more preferably 98 to 100% by mass.
- a rinse composition contains 2 or more types of the said hydrofluoroether, it is preferable that the sum total content rate is the said preferable range at the point which can fully rinse a mask.
- the rinse composition may contain components other than the above-mentioned hydrofluoroether as long as the effects of the present invention are not impaired.
- components other than the above hydrofluoroether include, but are not limited to, the same components as the components other than N-methyl-2-pyrrolidinone and N, N-dimethylformamide in the above-mentioned cleaning composition.
- these components may be contained singly or in combination.
- a rinse composition contains components other than the said hydrofluoroether, 20 mass% or less is preferable, as for the content rate of such a component, it is more preferable that it is 5 mass% or less, and it is 2 mass% or less. More preferable.
- the cleaning composition when the cleaning composition contains water, water may adhere to the surface of the mask to cause stains.
- the rinse composition contains at least one alcohol selected from methyl alcohol, ethyl alcohol, normal propyl alcohol, and isopropyl alcohol, the water is dissolved even if the cleaning composition contains water. It is preferable because it can be removed.
- the proportion of the alcohol content in the rinse composition is preferably 10% by mass or less, and more preferably 1 to 8% by mass, from the viewpoint that water can be sufficiently removed. And more preferably 2 to 5% by mass.
- the mask after the rinse is dried in the rinse step.
- a drying method a method of drying by natural drying, a method of drying by air blow, a method of drying by reduced pressure, and the like can be used as the drying method.
- a method of drying by reduced pressure is preferable in that the mask can be dried more efficiently.
- drying can be performed by blowing dry air of preferably 10 to 40 ° C., more preferably 20 to 30 ° C.
- dry air preferably 10 to 40 ° C., more preferably 20 to 30 ° C.
- the degree of pressure reduction be smaller.
- the adhesion amount of the rinse composition to the mask is small, drying can be performed in the process of reduced pressure, and therefore, it can be appropriately set according to the size of the mask and the adhesion amount of the rinse composition to the mask. It is preferable to set in the range of the vapor pressure or more of 10 ° C. or more and 101.3 kPa or less.
- the pressure is preferably reduced to a pressure of 25 to 101.3 kPa.
- the cleaning method of the embodiment described above by using a specific hydrofluoroether as the rinse composition, N-methyl-2-pyrrolidinone and N, N-dimethyl in the cleaning composition attached to the mask at the time of cleaning With any of the formamides, the hydrofluoroethers do not decompose and do not produce fluoride ions. Therefore, the mask can be cleaned extremely cleanly.
- the cleaning method of the present embodiment is useful as a method of cleaning a mask when manufacturing an organic EL element by a vacuum evaporation method, and is preferably used in a vacuum evaporation step of manufacturing a low molecular weight EL element.
- Example 1 In this experimental example, the degradability of the rinse composition with NMP and DMF was examined when it was heated for a predetermined time.
- a sample solution was prepared by adding 5% by mass of NMP or DMF to HFE-347pc-f (AE-3000, manufactured by Asahi Glass Co., Ltd.) and 5% by mass of NMP or DMF to HFE-449sl (manufactured by 3M, Novec 7100). . Each sample solution was allowed to stand in a 55 ° C. thermostat for 3 days.
- the concentration of fluorine ion in each solvent sample solution after standing was measured by a fluorine ion meter (IM-55G manufactured by Toa DKK, a fluorine ion electrode: F-2021 manufactured by Toa DK).
- the detection limit of the fluorine ion concentration was 0.5 ppm. The results are shown in Table 1.
- Example 2 In this experimental example, as an accelerated test, the degradability by NMP of the rinse composition when heating and refluxing a sample solution containing HFE-347 pc-f or HFE-449 sl and NMP was examined. 250 g of a sample solution to which 5% by mass of NMP is added to the same HFE-347 pc-f (Asahi Glass Co., Ltd., AE-3000) as above is placed in a flask and heated to a boiling state with a heater for 4 hours Refluxed. Thereafter, 175 g of distillate was collected in 80 minutes, and the pH, fluoride ion concentration and acid content of the remaining residue were measured. The results are shown in Table 2.
- the pH is measured with a pH meter (Toa DK Co., Ltd., HM-25R, electrode: Toa DK Co., Ltd., GST-5741C), and the fluorine ion concentration is measured as a fluorine ion meter (Toa DK Co., Ltd., IM-55G, Fluorine ion electrode: Toa DK Co., Ltd., F-2021)
- the measurement of the acid content was carried out by titration using phenolphthalein as an indicator.
- the detection limit was 0.5 ppm for both the fluorine ion concentration and the acid content.
- Table 2 The results are shown in Table 2.
- HFE-347pc-f in the rinse composition is not decomposed by NMP or DMF and does not produce fluoride ions even by heating for 3 days or heating under reflux for 80 minutes, whereas HFE does not form fluoride ions. It can be seen that -449sl was decomposed by NMP or DMF to generate fluorine ions.
- Example 2 The cleaning ability of the metal mask was examined when HFE-347 pc-f was used as the rinse composition.
- the metal (SUS) piece to which the low molecular weight organic EL material is attached is immersed in NMP at room temperature (25 ° C.) for 1 minute. Thereafter, the metal piece is rinsed by immersion in HFE-347 pc-f (AE-3000, manufactured by Asahi Glass Co., Ltd.) for 1 minute at room temperature (25 ° C.) and pulled up.
- the metal piece is naturally dried and then immersed in pure water, and the extracted fluorine ion concentration is measured by a fluorine ion meter (IM-55G manufactured by Toa DKK, fluorine ion electrode: F-2021 manufactured by Toa DK). Do.
- the detection limit of the fluorine ion concentration is 0.5 ppm.
- Table 3 The results are shown in Table 3 as “detection” where fluorine ions are detected and “not detected” where fluorine ions are not detected.
- the mask can be cleaned and cleaned by using HFE-347 pc-f as the rinse composition.
- HFE-449sl it can be seen that fluorine ions adhere to the mask surface and the mask can not be cleaned cleanly.
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Abstract
Description
本実施形態の洗浄方法は、例えば、有機EL素子製造時の真空蒸着工程において使用されたマスクを洗浄する方法であり、洗浄工程と、リンス工程と、乾燥工程を含む。本実施形態の洗浄方法では、洗浄工程において、N-メチル-2-ピロリジノン及びN,N-ジメチルホルムアミドから選ばれる少なくとも1種を含む洗浄組成物でマスクを洗浄する。次いで、リンス工程において、洗浄組成物で洗浄後のマスクを、HFE-347pc-f、HFE-254pc、HFE-356pcf及びHFE-449mec-fから選ばれる少なくとも1種のハイドロフルオロエーテルを含むリンス組成物によってリンスする。その後、必要に応じて乾燥工程を行い、マスクを乾燥させる。
HFE-347pc-fの市販品としては、例えば、「アサヒクリン(登録商標)AE-3000」(旭硝子社製)が挙げられる。
本実験例では、所定の時間加熱した場合の、NMP及びDMFによるリンス組成物の分解性について調べた。HFE-347pc-f(旭硝子社製、AE-3000)にNMP又はDMFを5質量%、同様にHFE-449sl(スリーエム社製、Novec7100)にNMP又はDMFを5質量%添加したサンプル液を作製した。各サンプル液を、55℃の恒温槽内に3日間静置した。静置後の各溶剤サンプル液中のフッ素イオン濃度をフッ素イオンメーター(東亜ディーケーケー社製、IM-55G、フッ素イオン電極:東亜ディーケーケー社製、F-2021)によって測定した。なお、フッ素イオン濃度の検出限界は0.5ppmとした。結果を表1に示す。
本実験例では、加速試験として、HFE-347pc-f又はHFE-449slと、NMPとを含むサンプル液を加熱還流させた時のリンス組成物の、NMPによる分解性について調べた。上記同様のHFE-347pc-f(旭硝子社製、AE-3000)に対し、NMPを5質量%添加したサンプル液の250gをフラスコに入れ、ヒーターで沸騰状態になるように加熱して、4時間還流した。その後、80分間で175gの留出液を採取し、残った釜残液のpH、フッ素イオン濃度、酸分を測定した。結果を表2に示す。
リンス組成物としてHFE-347pc-fを用いた場合の金属製マスクの洗浄性について調べた。低分子型有機EL材料が付着した金属(SUS)片を室温(25℃)のNMPに1分浸漬する。その後、金属片を、室温(25℃)のHFE-347pc-f(旭硝子社製、AE-3000)に1分浸漬することでリンスして、引き上げる。この金属片を自然乾燥させた後純水に浸漬し、抽出されたフッ素イオン濃度をフッ素イオンメーター(東亜ディーケーケー社製、IM-55G、フッ素イオン電極:東亜ディーケーケー社製、F-2021)によって測定する。なお、フッ素イオン濃度の検出限界は0.5ppmとする。その結果を、フッ素イオンが検出される場合を「検出」、検出されない場合を「不検出」として、表3に示す。
リンス組成物としてHFE-449slを用いた場合の金属製マスクの洗浄性について調べた。低分子型有機EL材料が付着した金属(SUS)片を室温(25℃)のNMPに1分浸漬した後、室温(25℃)のHFE-449sl(スリーエム社製、Novec7100)に1分浸漬することでリンスし、引き上げる。この金属片を自然乾燥させた後、純水に浸漬し、抽出されたフッ素イオンの有無を調べる。その結果を表3に示す。
Claims (10)
- 真空蒸着用のマスクの洗浄方法であって、
前記マスクを、N-メチル-2-ピロリジノン及びN,N-ジメチルホルムアミドから選ばれる少なくとも1種を含む洗浄組成物で洗浄し、
洗浄後の前記マスクを、CF3CH2-O-CF2CHF2、CHF2CF2-O-CH3、CHF2-O-CH2CF2CHF2及びCF3CHFCF2-O-CH2CF3から選ばれる少なくとも1種のハイドロフルオロエーテルを含むリンス組成物でリンスすることを特徴とする洗浄方法。 - 前記リンス組成物中の前記ハイドロフルオロエーテルの含有量の割合は、80質量%以上100質量%以下である、請求項1に記載の洗浄方法。
- 前記洗浄組成物は、N-メチル-2-ピロリジノンを含む、請求項1又は2に記載の洗浄方法。
- 前記リンス組成物は、CF3CH2-O-CF2CHF2を含む、請求項1~3のいずれか一項に記載の洗浄方法。
- 前記マスクの洗浄及びリンスをいずれも10℃以上40℃以下で行う、請求項1~4のいずれか一項に記載の洗浄方法。
- 前記マスクの洗浄及びリンスをいずれも20℃以上30℃以下で行う、請求項1~5のいずれか一項に記載の洗浄方法。
- 前記真空蒸着は、低分子型有機EL素子の製造において行われる、請求項1~6のいずれか一項に記載の洗浄方法。
- 前記リンス組成物でリンスした後のマスクを乾燥させる、請求項1~7のいずれか一項に記載の洗浄方法。
- N-メチル-2-ピロリジノン及びN,N-ジメチルホルムアミドから選ばれる少なくとも1種を含む洗浄組成物で洗浄された真空蒸着用のマスクをリンスするリンス組成物であって、
CF3CH2-O-CF2CHF2、CHF2CF2-O-CH3、CHF2-O-CH2CF2CHF2及びCF3CHFCF2-O-CH2CF3から選ばれる少なくとも1種のハイドロフルオロエーテルを含むことを特徴とするリンス組成物。 - 前記リンス組成物中の前記ハイドロフルオロエーテルの含有量の割合は、80質量%以上100質量%以下である、請求項9に記載のリンス組成物。
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Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH08245469A (ja) * | 1995-03-10 | 1996-09-24 | Agency Of Ind Science & Technol | 含フッ素エーテル及びエタノールからなる共沸様組成物 |
JP2002180280A (ja) * | 2000-12-18 | 2002-06-26 | National Institute Of Advanced Industrial & Technology | 含フッ素エーテルとアルコール類からなる共沸または共沸様組成物 |
WO2005001015A1 (ja) * | 2003-06-27 | 2005-01-06 | Asahi Glass Company, Limited | 洗浄すすぎ方法 |
WO2005026309A1 (ja) * | 2003-09-09 | 2005-03-24 | Zeon Corporation | 洗浄剤組成物および洗浄方法 |
JP2005162947A (ja) * | 2003-12-04 | 2005-06-23 | Kanto Chem Co Inc | 低分子型有機el素子製造の真空蒸着工程において使用するマスクの洗浄液組成物および洗浄方法 |
JP2006117811A (ja) * | 2004-10-22 | 2006-05-11 | Central Glass Co Ltd | 含フッ素エーテルを含む共沸および共沸様組成物 |
JP2008106289A (ja) * | 2006-10-23 | 2008-05-08 | Japan Energy Corp | 焼結部品の洗浄方法 |
JP2009259565A (ja) * | 2008-04-16 | 2009-11-05 | Canon Inc | マスク洗浄装置 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002110345A (ja) | 2000-09-29 | 2002-04-12 | Toshiba Corp | マスク及びそれを用いた有機el表示素子の製造方法 |
JP4092914B2 (ja) | 2001-01-26 | 2008-05-28 | セイコーエプソン株式会社 | マスクの製造方法、有機エレクトロルミネッセンス装置の製造方法 |
JP2002313564A (ja) | 2001-04-17 | 2002-10-25 | Nec Corp | シャドウマスク、該シャドウマスクの製造方法、およびディスプレイ |
KR20070052205A (ko) * | 2005-11-16 | 2007-05-21 | 도오꾜오까고오교 가부시끼가이샤 | 반도체 제조용 약액 공급 장치의 세정액 |
US20070129273A1 (en) | 2005-12-07 | 2007-06-07 | Clark Philip G | In situ fluoride ion-generating compositions and uses thereof |
JP5085954B2 (ja) * | 2007-02-23 | 2012-11-28 | スリーエム イノベイティブ プロパティズ カンパニー | フッ素系溶剤含有溶液の精製方法及び精製装置ならびに洗浄装置 |
WO2008149907A1 (ja) * | 2007-06-08 | 2008-12-11 | Asahi Glass Company, Limited | 洗浄溶剤および洗浄方法 |
TWI480937B (zh) * | 2011-01-06 | 2015-04-11 | Screen Holdings Co Ltd | 基板處理方法及基板處理裝置 |
-
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Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH08245469A (ja) * | 1995-03-10 | 1996-09-24 | Agency Of Ind Science & Technol | 含フッ素エーテル及びエタノールからなる共沸様組成物 |
JP2002180280A (ja) * | 2000-12-18 | 2002-06-26 | National Institute Of Advanced Industrial & Technology | 含フッ素エーテルとアルコール類からなる共沸または共沸様組成物 |
WO2005001015A1 (ja) * | 2003-06-27 | 2005-01-06 | Asahi Glass Company, Limited | 洗浄すすぎ方法 |
WO2005026309A1 (ja) * | 2003-09-09 | 2005-03-24 | Zeon Corporation | 洗浄剤組成物および洗浄方法 |
JP2005162947A (ja) * | 2003-12-04 | 2005-06-23 | Kanto Chem Co Inc | 低分子型有機el素子製造の真空蒸着工程において使用するマスクの洗浄液組成物および洗浄方法 |
JP2006117811A (ja) * | 2004-10-22 | 2006-05-11 | Central Glass Co Ltd | 含フッ素エーテルを含む共沸および共沸様組成物 |
JP2008106289A (ja) * | 2006-10-23 | 2008-05-08 | Japan Energy Corp | 焼結部品の洗浄方法 |
JP2009259565A (ja) * | 2008-04-16 | 2009-11-05 | Canon Inc | マスク洗浄装置 |
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TWI781168B (zh) | 2022-10-21 |
JP6849064B2 (ja) | 2021-03-24 |
JPWO2019003605A1 (ja) | 2020-04-23 |
CN109415798A (zh) | 2019-03-01 |
SG11201913385UA (en) | 2020-01-30 |
KR20200021444A (ko) | 2020-02-28 |
TW201905191A (zh) | 2019-02-01 |
KR102478194B1 (ko) | 2022-12-15 |
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