WO2018201511A1 - 一种显示面板及显示装置 - Google Patents

一种显示面板及显示装置 Download PDF

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Publication number
WO2018201511A1
WO2018201511A1 PCT/CN2017/083784 CN2017083784W WO2018201511A1 WO 2018201511 A1 WO2018201511 A1 WO 2018201511A1 CN 2017083784 W CN2017083784 W CN 2017083784W WO 2018201511 A1 WO2018201511 A1 WO 2018201511A1
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Prior art keywords
layer
wire segment
disposed
polarizing
display panel
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/CN2017/083784
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English (en)
French (fr)
Inventor
简重光
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
HKC Co Ltd
Chongqing HKC Optoelectronics Technology Co Ltd
Original Assignee
HKC Co Ltd
Chongqing HKC Optoelectronics Technology Co Ltd
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Application filed by HKC Co Ltd, Chongqing HKC Optoelectronics Technology Co Ltd filed Critical HKC Co Ltd
Priority to US16/349,615 priority Critical patent/US10854643B2/en
Publication of WO2018201511A1 publication Critical patent/WO2018201511A1/zh
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133528—Polarisers
    • G02F1/133533—Colour selective polarisers
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133528—Polarisers
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G02F1/13439—Electrodes characterised by their electrical, optical, physical properties; materials therefor; method of making
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136286—Wiring, e.g. gate line, drain line
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/451—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs characterised by the compositions or shapes of the interlayer dielectrics
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/13356—Structural association of cells with optical devices, e.g. polarisers or reflectors characterised by the placement of the optical elements
    • G02F1/133565—Structural association of cells with optical devices, e.g. polarisers or reflectors characterised by the placement of the optical elements inside the LC elements, i.e. between the cell substrates
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136222—Colour filters incorporated in the active matrix substrate
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136227—Through-hole connection of the pixel electrode to the active element through an insulation layer
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136286—Wiring, e.g. gate line, drain line
    • G02F1/136295—Materials; Compositions; Manufacture processes
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2202/00—Materials and properties
    • G02F2202/02—Materials and properties organic material
    • G02F2202/022—Materials and properties organic material polymeric
    • G02F2202/023—Materials and properties organic material polymeric curable
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2202/00—Materials and properties
    • G02F2202/10—Materials and properties semiconductor
    • G02F2202/103—Materials and properties semiconductor a-Si

Definitions

  • the present application relates to the field of display technologies, and in particular, to a display panel and a display device.
  • the liquid crystal display has many advantages such as thin body, power saving, no radiation, and has been widely used.
  • Most of the liquid crystal displays on the market are backlight type liquid crystal displays, which include a liquid crystal panel and a backlight module.
  • the working principle of the liquid crystal panel is to place liquid crystal molecules in two parallel glass substrates, and apply a driving voltage on the two glass substrates to control the rotation direction of the liquid crystal molecules to refract the light of the backlight module to generate a picture.
  • a thin film transistor liquid crystal display includes a liquid crystal panel including a color filter substrate (CF Substrate, also referred to as a color filter substrate), and a thin film transistor array substrate (Thin Film Transistor Substrate, TFT Substrate). And a mask, a transparent electrode is present on the opposite inner side of the substrate. A layer of liquid crystal molecules (LC) is sandwiched between the two substrates.
  • CF Substrate also referred to as a color filter substrate
  • TFT Substrate Thin Film Transistor Substrate, TFT Substrate
  • the technical problem to be solved by the present application is to provide a display panel having a polarizing effect and a more convenient process.
  • the present application also provides a display device.
  • a display panel characterized in that the display panel comprises
  • first layer wires are disposed on the substrate, the first layer wires are provided with a polarizing photoresist layer, and the polarizing photoresist layer can form an anisotropic photoresist film,
  • the first layer of wires is connected to the column data driving and pixel driving of the display panel.
  • the polarizing photoresist layer uses a polymer of 3,4-ethylenedioxythiophene as a bulk and further adds a corresponding functional group and a photosensitive polymer.
  • PEDOT is a polymer of EDOT (3,4-ethylenedioxythiophene monomer).
  • PEDOT has the characteristics of simple molecular structure, small energy gap and high electrical conductivity. Photosensitive polymer, short curing time, good performance, low energy consumption and less pollution.
  • the photosensitive polymer is a polysiloxane acrylate.
  • Polysiloxane acrylate has high photosensitivity, stable storage, simple synthesis and various structural types.
  • the photosensitive polymer is urethane acrylate.
  • the urethane acrylate (PUA) contains an acrylic functional group and a urethane bond in the molecule, and the cured adhesive has high abrasion resistance, adhesion, flexibility, high peel strength and excellent low temperature resistance of the polyurethane. Polyacrylate's excellent optical properties and weatherability.
  • the display panel comprises a thin film transistor
  • the first layer of wires comprises a gate wire segment disposed on the thin film transistor
  • the gate wire segment is provided with an insulating dielectric layer, and the corresponding grid on the insulating dielectric layer
  • the pole wire segment is provided with an amorphous silicon layer
  • the amorphous silicon layer is provided with an ohmic contact layer corresponding to the amorphous silicon layer
  • the source and the drain of the separated thin film transistor are disposed at both ends of the ohmic contact layer
  • a channel is disposed between the source and the drain, the channel passes through an ohmic contact layer, and the bottom of the channel is an amorphous silicon layer.
  • the first layer of the wire is covered on the substrate, whether it is the gate wire segment of the thin film transistor or the connection segment of the row scan driving and the gate wire segment of the thin film transistor, and the three-layer structure is adopted, and the overall viscosity of the display panel is better. Improve the quality of the first layer of wire, improve product yield and reduce production costs.
  • the first layer of wires includes a source wire segment and a drain wire segment disposed on the thin film transistor, and the source wire segment and the drain wire segment are provided with a polarization photoresist layer, the polarization Photoresist A pixel electrode layer is disposed on the layer, and the polarized photoresist layer is provided with a via hole corresponding to the drain wire segment, and the pixel electrode layer is connected to the drain wire segment through the via hole. Clear the upper and lower positions of the polarized photoresist layer.
  • the polarized photoresist layer is sputter coated on the first layer of wires by chemical vapor deposition.
  • CVD Chemical Vapor Deposition
  • chemical vapor deposition developed in the gas phase at high temperatures, as a means of coating, but not only for the coating of heat-resistant substances, but also for the purification of high-purity metals, powder synthesis, semiconductors Film and the like.
  • the deposition temperature is low, the film composition is easy to control, the film thickness is proportional to the deposition time, the uniformity, the repeatability is good, and the step coverage is excellent.
  • the polarizing photoresist layer is provided with a pixel electrode layer, and the pixel electrode layer is directly sputtered and etched on the polarizing photoresist layer.
  • the photopolymer reacts photochemically to form an anisotropic photoresist film, and the photoresist film has characteristics of resistance to ITO sputtering and etching.
  • the present application also discloses a display device including a backlight module and a display panel as described above.
  • the backlight module includes a polarizing plate
  • the display panel includes a thin film transistor array substrate and a color film substrate, and the polarizing plate is disposed only on one side of the color film substrate.
  • the display panel has a polarization function on one side of the thin film transistor array substrate, which can save the polarizing plate that needs to be attached to the TFT side of the group after the cell pair, thereby achieving the advantages of reduced process and cost saving.
  • the polarizing photoresist film has the function of the dielectric property barrier layer and the polarization effect required for the protective layer of the thin film transistor, the steps in the process of the display panel and the adhesion of one polarizing plate in the display device after the group can be omitted. Reduce processes and reduce costs.
  • FIG. 1 is a schematic diagram of a thin film transistor of a display panel according to an embodiment of the present application
  • FIG. 2 is a schematic diagram of a display device according to an embodiment of the present application.
  • first and second are used for descriptive purposes only and are not to be construed as indicating or implying a relative importance or implicitly indicating the number of technical features indicated. Thus, features defining “first” and “second” may include one or more of the features either explicitly or implicitly.
  • a plurality means two or more unless otherwise stated.
  • the term “comprises” and its variations are intended to cover a non-exclusive inclusion.
  • connection In the description of the present application, it should be noted that the terms “installation”, “connected”, and “connected” are to be understood broadly, and may be fixed or detachable, for example, unless otherwise specifically defined and defined. Connected, or integrally connected; can be mechanical or electrical; can be directly connected, or indirectly connected through an intermediate medium, can be the internal communication of the two components.
  • Connected, or integrally connected can be mechanical or electrical; can be directly connected, or indirectly connected through an intermediate medium, can be the internal communication of the two components.
  • the specific meanings of the above terms in the present application can be understood in the specific circumstances for those skilled in the art.
  • the display panel includes a substrate 1; a plurality of first layer wires, the first layer wires are disposed on the substrate 1, and the first layer wires are provided with a polarizing photoresist layer 7,
  • the polarizing photoresist layer 7 can form a photoresist film having an anisotropy, and the first layer wires are driven by a column data driving and pixel driving of the display panel.
  • the polarizing photoresist film has the function of the dielectric property barrier layer and the polarization effect required for the protective layer of the thin film transistor, the steps in the process of the display panel and the adhesion of the one polarizing plate 9 in the display device after the group can be omitted. Reduce process and reduce costs.
  • the display panel includes a substrate 1; a plurality of first layer wires, the first layer wires are disposed on the substrate 1, and the first layer wires are provided with a polarizing photoresist layer 7
  • the polarizing photoresist layer 7 can form an anisotropic photoresist film, and the first layer of wires is driven by a column data driving and pixel driving of the display panel.
  • the polarizing photoresist layer 7 uses a polymer of 3,4-ethylenedioxythiophene as a bulk and further adds a corresponding functional group and a photosensitive polymer.
  • PEDOT is a polymer of EDOT (3,4-ethylenedioxythiophene monomer). PEDOT has the characteristics of simple molecular structure, small energy gap and high electrical conductivity. Photosensitive polymer, short curing time, good performance, low energy consumption and less pollution.
  • the display panel includes a substrate 1; a plurality of first layer wires, the first layer wires are disposed on the substrate 1, and the first layer wires are provided with a polarizing photoresist layer 7
  • the polarizing photoresist layer 7 can form an anisotropic photoresist film, and the first layer of wires is driven by a column data driving and pixel driving of the display panel.
  • the polarizing photoresist layer 7 uses a polymer of 3,4-ethylenedioxythiophene as a bulk and further adds a corresponding functional group and a photosensitive polymer.
  • the photosensitive polymer is polymerized Silicone acrylate.
  • PEDOT is a polymer of EDOT (3,4-ethylenedioxythiophene monomer).
  • PEDOT has the characteristics of simple molecular structure, small energy gap and high electrical conductivity. Photosensitive polymer, short curing time, good performance, low energy consumption and less pollution.
  • Polysiloxane acrylate has high photosensitivity, stable storage, simple synthesis and various structural types.
  • the display panel includes a substrate 1; a plurality of first layer wires, the first layer wires are disposed on the substrate 1, and the first layer wires are provided with a polarizing photoresist layer 7
  • the polarizing photoresist layer 7 can form an anisotropic photoresist film, and the first layer of wires is driven by a column data driving and pixel driving of the display panel.
  • the polarizing photoresist layer 7 uses a polymer of 3,4-ethylenedioxythiophene as a bulk and further adds a corresponding functional group and a photosensitive polymer.
  • the photosensitive polymer is a urethane acrylate.
  • PEDOT is a polymer of EDOT (3,4-ethylenedioxythiophene monomer). PEDOT has the characteristics of simple molecular structure, small energy gap and high electrical conductivity. Photosensitive polymer, short curing time, good performance, low energy consumption and less pollution.
  • the urethane acrylate contains an acrylic functional group and a urethane bond in the molecule, and the cured adhesive has high abrasion resistance, adhesion, flexibility, high peel strength and excellent low temperature resistance of the polyurethane. Polyacrylate's excellent optical properties and weatherability.
  • photosensitive polymers such as aminoacrylic acid (light color, low viscosity, excellent chemical resistance, weather resistance) Good properties, good coating wear resistance); Tripropylene glycol diacrylate (a common acrylic acid derivative monomer used as a crosslinking agent in photocuring or radiation curing to reduce the radiation dose; used as a reactive diluent) , can significantly reduce the viscosity of the resin system); hydroxypropyl acrylate (can be used to produce adhesives, thermosetting coatings, fiber treatment agents and synthetic resin copolymer modifiers, can also be used to prepare lubricant additives, etc.
  • photosensitive polymers such as aminoacrylic acid (light color, low viscosity, excellent chemical resistance, weather resistance) Good properties, good coating wear resistance); Tripropylene glycol diacrylate (a common acrylic acid derivative monomer used as a crosslinking agent in photocuring or radiation curing to reduce the radiation dose; used as a reactive diluent) , can significantly reduce the viscosity of the resin system); hydroxy
  • FIG. 1 is a schematic diagram of a thin film transistor of a display panel according to an embodiment of the present application, the display panel includes a thin film transistor, and the first layer of wires includes a thin film transistor disposed on the thin film transistor.
  • a gate wire segment wherein the gate wire segment is provided with an insulating dielectric layer 3, and a corresponding silicon wire segment is disposed on the insulating dielectric layer 3 with an amorphous silicon layer, and the amorphous silicon layer is provided with an amorphous layer
  • An ohmic contact layer corresponding to the silicon layer, a source 5 and a drain 6 of the separated thin film transistor are disposed at both ends of the ohmic contact layer, and a channel is disposed between the source 5 and the drain 6 The channel passes through an ohmic contact layer, the bottom of which is an amorphous silicon layer.
  • the substrate 1 is entirely covered with the first layer of wires, whether it is the gate wire segment of the thin film transistor or the connection portion of the row scan driving and the gate wire segment of the thin film transistor, and the three-layer structure is adopted, and the overall viscosity of the display panel is better. Improve the quality of the first layer of wire, improve product yield and reduce production costs.
  • Gate 2 (Gate) is plated with aluminum (Al), molybdenum (Mo).
  • the amorphous silicon layer uses amorphous silicon as the channel layer, and of course other semiconductor layer materials can also be used.
  • the ohmic contact layer uses silicon with a high concentration of phosphorus to reduce the interface potential difference.
  • Source 5 Source 5
  • drain 6 Drain 6
  • Molybdenum Mo
  • Al aluminum
  • Molybdenum or molybdenum alloy can achieve better adhesion, and can be adhered to the metal of the intermediate conductive layer such as copper, aluminum, silver, gold, chromium, and the like, and the other layer can be combined with other layers of the display panel such as the substrate.
  • the photoresist layer, the insulating layer and the like are better adhered, the material selection is convenient, and the production technology is mature.
  • the insulating dielectric layer 3 is a nitrogen cerium compound (SiNx), that is, a nitrogen silicon compound.
  • the insulating dielectric layer 3 may also employ a polymer of 3,4-ethylenedioxythiophene as a bulk and further add a corresponding functional group and a photosensitive polymer.
  • PEDOT is a polymer of EDOT (3,4-ethylenedioxythiophene monomer).
  • PEDOT has the characteristics of simple molecular structure, small energy gap and high electrical conductivity. Photosensitive polymer, curing time is short, Good performance, low energy consumption and less pollution.
  • the photosensitive polymer is a silicone acrylate. Polysiloxane acrylate has high photosensitivity, stable storage, simple synthesis and various structural types.
  • the photosensitive polymer is a urethane acrylate.
  • the urethane acrylate (PUA) contains an acrylic functional group and a urethane bond in the molecule, and the cured adhesive has high abrasion resistance, adhesion, flexibility, high peel strength and excellent low temperature resistance of the polyurethane.
  • the insulating dielectric layer 3 comprises nanoporous silicon, the nanoporous silicon comprises a plurality of hollow columnar sub-assemblies connected to each other, the sub-assembly has a hexagonal shape, and the sub-assembly has a circular through-hole in the middle thereof.
  • the circular through hole of the subassembly is provided with a plurality of silicon holes, and the silicon holes are provided with germanium nanoparticles.
  • the hexagonal shape of the porous part of the porous silicon facilitates the splicing and arrangement of a plurality of sub-components, and a plurality of bismuth nanoparticles are disposed in the silicon hole, which does not affect the thickness of the porous silicon.
  • the first layer of wires includes a source wire segment and a drain wire segment disposed on the thin film transistor, and the source wire segment and the drain wire segment are provided with a polarizing photoresist layer 7 a pixel electrode layer 8 is disposed on the polarizing photoresist layer 7.
  • the polarizing photoresist layer 7 is provided with a via hole corresponding to the drain wire segment, and the pixel electrode layer 8 passes through the via hole and the drain wire. Segment connection.
  • the polarizing resist layer 7 may employ a polymer of 3,4-ethylenedioxythiophene as a bulk and further add a corresponding functional group and a photosensitive polymer.
  • PEDOT is a polymer of EDOT (3,4-ethylenedioxythiophene monomer).
  • PEDOT has the characteristics of simple molecular structure, small energy gap and high electrical conductivity. Photosensitive polymer, short curing time, good performance, low energy consumption and less pollution.
  • the photosensitive polymer is a silicone acrylate.
  • Polysiloxane acrylate has high photosensitivity, stable storage, simple synthesis and various structural types.
  • the photosensitive polymer is a urethane acrylate.
  • the urethane acrylate (PUA) contains an acrylic functional group and a urethane bond in the molecule, and the cured adhesive has high abrasion resistance, adhesion, flexibility, high peel strength and excellent low temperature resistance of the polyurethane. Polyacrylate's excellent optical properties and weatherability.
  • the polarizing photoresist film has the function of the dielectric property barrier layer and the polarization effect required for the protective layer of the thin film transistor, the steps in the process of the display panel and the adhesion of the one polarizing plate 9 in the display device after the group can be omitted, and the reduction can be reduced. Process and reduce costs.
  • the polarized photoresist layer 7 is chemically vapor deposited on the process.
  • Sputter is plated on the first layer of wires.
  • CVD Chemical Vapor Deposition
  • chemical vapor deposition developed in the gas phase at high temperatures, as a means of coating, but not only for the coating of heat-resistant substances, but also for the purification of high-purity metals, powder synthesis, semiconductors Film and the like.
  • the deposition temperature is low, the film composition is easy to control, the film thickness is proportional to the deposition time, the uniformity, the repeatability is good, and the step coverage is excellent. .
  • the chemical vapor deposition method of CVD (Chemical Vapor Deposition) is characterized in that the high melting point substance can be synthesized at a low temperature; the form of the precipitated substance is various in single crystal, polycrystal, whisker, powder, film, etc.; not only on the substrate
  • the coating is applied, and the surface of the powder can be coated.
  • high-melting substances can be synthesized at low temperatures, contributing to energy conservation, and it is promising as a new technology.
  • the pixel electrode layer 8 is disposed on the polarizing photoresist layer 7, and the pixel electrode layer 8 is directly sputtered and etched on the polarizing photoresist layer 7.
  • the photopolymer After the polarizing photoresist layer 7 is irradiated by polarized ultraviolet light, the photopolymer reacts photochemically to form an anisotropic photoresist film, and the photoresist film has characteristics of resistance to ITO sputtering and etching.
  • a display device includes a backlight module and a display panel as described above.
  • the backlight module includes a polarizing plate 9, and the display panel includes a thin film transistor array substrate 12 and a color filter substrate 11, and the polarizing plate 9 is disposed only on one side of the color filter substrate 11.
  • the display panel has a polarization function on the side of the thin film transistor array substrate 12, which can save the polarizing plate 9 to be attached to the TFT side of the group after the cell is disposed, thereby achieving the advantages of reduced process and cost saving.
  • the material of the substrate 1 may be glass, plastic or the like.
  • the display panel includes a liquid crystal panel, an OLED (Organic Light-Emitting Diode) panel, a curved panel, a plasma panel, etc.
  • the liquid crystal panel includes an array substrate and a color filter substrate 11 (CF, Color Filter).
  • the array substrate is disposed opposite to the color filter substrate 11.
  • a liquid crystal and a spacer (PS) are disposed between the array substrate and the color filter substrate 11.
  • the thin film transistor (TFT) is disposed on the array substrate.
  • Thin Film Transistor Thin Film Transistor
  • a color filter layer 11 is provided on the color filter substrate 11.
  • the color filter substrate 11 may include a TFT array, and the color film and the TFT array may be formed on the same substrate 1, and the array substrate may include a color filter layer.
  • the display panel of the present application may be a curved type panel.

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Abstract

一种显示面板及显示装置，所述显示面板包括基板（1）；若干条第一层导线，所述第一层导线设置在基板（1）上，所述第一层导线上设置有偏振光阻层（7），所述偏振光阻层（7）可形成具有各向异性的光阻膜，所述第一层导线与所述显示面板的列数据驱动、像素驱动连接。

Description

一种显示面板及显示装置 【技术领域】
本申请涉及显示技术领域，尤其涉及一种显示面板及显示装置。
【背景技术】
液晶显示器具有机身薄、省电、无辐射等众多优点，得到了广泛的应用。现有市场上的液晶显示器大部分为背光型液晶显示器，其包括液晶面板及背光模组(backlightmodule)。液晶面板的工作原理是在两片平行的玻璃基板当中放置液晶分子，并在两片玻璃基板上施加驱动电压来控制液晶分子的旋转方向，以将背光模组的光线折射出来产生画面。
其中，薄膜晶体管液晶显示器(Thin Film Transistor-Liquid Crystal Display，TFT-LCD)由于具有低的功耗、优异的画面品质以及较高的生产良率等性能，目前已经逐渐占据了显示领域的主导地位。同样，薄膜晶体管液晶显示器包含液晶面板和背光模组，液晶面板包括彩膜基板(Color Filter Substrate，CF Substrate，也称彩色滤光片基板)、薄膜晶体管阵列基板(Thin Film Transistor Substrate，TFT Substrate)和光罩(Mask)，上述基板的相对内侧存在透明电极。两片基板之间夹一层液晶分子(Liquid Crystal，LC)。
随着薄膜晶体管液晶显示器逐渐往超大尺寸、高驱动频率、高分辨率等方面发展，薄膜晶体管液晶显示器在制作时，如何能更薄化、制程步骤更简化不仅影响着显示面板的加工质量和效率，也决定着成本。
【发明内容】
本申请所要解决的技术问题是提供一种具有偏振作用、制程更便利的显示面板。
此外，本申请还提供一种显示装置。
本申请的目的是通过以下技术方案来实现的：
一种显示面板，其特征在于，所述显示面板包括
基板；
若干条第一层导线，所述第一层导线设置在基板上，所述第一层导线上设置有偏振光阻层，所述偏振光阻层可形成具有各向异性的光阻膜，所述第一层导线与所述显示面板的列数据驱动、像素驱动连接。
其中，所述偏振光阻层采用3，4-乙烯二氧噻吩的聚合物作为本体再加入相应的官能基与光敏性聚合物。PEDOT是EDOT(3，4-乙烯二氧噻吩单体)的聚合物，PEDOT具有分子结构简单、能隙小、电导率高等特点。光敏性聚合物，固化时间短，性能好，能耗低，少污染。
其中，所述光敏性聚合物采用聚硅氧烷丙烯酸酯。聚硅氧烷丙烯酸酯光敏度高、贮存稳定、合成简便、结构类型多样。
其中，所述光敏性聚合物采用聚氨酯丙烯酸酯。聚氨酯丙烯酸酯(PUA)的分子中含有丙烯酸官能团和氨基甲酸酯键，固化后的胶黏剂具有聚氨酯的高耐磨性、粘附力、柔韧性、高剥离强度和优良的耐低温性能以及聚丙烯酸酯卓越的光学性能和耐候性。
其中，所述显示面板包括薄膜晶体管，所述第一层导线包括设置在所述薄膜晶体管的栅极导线段，所述栅极导线段上设置有绝缘介质层，所述绝缘介质层上对应栅极导线段设置有非晶硅层，所述非晶硅层上设置有与非晶硅层对应的欧姆接触层，所述欧姆接触层上两端设置有分隔的薄膜晶体管的源极和漏极，所述源极和所述漏极之间设置有沟道，所述沟道穿过欧姆接触层，所述沟道底部为非晶硅层。基板上整体覆盖第一层导线，不管是薄膜晶体管的栅极导线段，还是行扫描驱动与薄膜晶体管的栅极导线段的连接段，都采用三层结构，显示面板的整体粘粘性更好，改善第一层导线的品质，提升产品良率，降低生产成本。
其中，所述第一层导线包括设置在所述薄膜晶体管的源极导线段和漏极导线段，所述源极导线段和所述漏极导线段上设置有偏振光阻层，所述偏振光阻 层上设有像素电极层，所述偏振光阻层对应所述漏极导线段设置有过孔，所述像素电极层通过所述过孔与所述漏极导线段连接。明确偏振光阻层的上下位置。
其中，所述偏振光阻层采用化学气相沉积溅镀在所述第一层导线上。CVD(Chemical Vapor Deposition)化学气相沉积法，在高温下的气相反应，作为涂层的手段而开发，但不只应用于耐热物质的涂层，而且应用于高纯度金属的精制、粉末合成、半导体薄膜等。沉积温度低，薄膜成份易控，膜厚与淀积时间成正比，均匀性，重复性好，台阶覆盖性优良。
其中，所述偏振光阻层上设有像素电极层，在所述偏振光阻层上直接溅镀、蚀刻所述像素电极层。偏振光阻层通过偏振紫外光照射后，光敏聚合物发生光化学反应，形成具有各向异性的光阻膜，同时该光阻膜具有可耐ITO溅镀及蚀刻的特性。
根据本申请的又一个方面，本申请还公开了一种显示装置，所述显示装置包括背光模组和如上所述的显示面板。
其中，所述背光模组包括偏振片，所述显示面板包括薄膜晶体管阵列基板和彩膜基板，所述偏振片仅设置在所述彩膜基板一侧。显示面板在作为薄膜晶体管阵列基板的一侧具有偏振功能，可节省cell对组后TFT侧需要贴的偏振片，从而达到减少制程与节省成本的效益。
本申请由于偏振光阻膜具有薄膜晶体管保护层所需的介电特性阻隔层功能以及偏振作用，可省掉显示面板的制程中的步骤以及对组后显示装置中一侧偏振片的贴覆，减少工艺与降低成本。
【附图说明】
所包括的附图用来提供对本申请实施例的进一步的理解，其构成了说明书的一部分，用于例示本申请的实施方式，并与文字描述一起来阐释本申请的原理。显而易见地，下面描述中的附图仅仅是本申请的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动性的前提下，还可以根据这些附图获 得其他的附图。在附图中：
图1是本申请实施例一种显示面板的薄膜晶体管示意图；
图2是本申请实施例一种显示装置的示意图。
其中，1、基板；11、彩膜基板；12、薄膜晶体管阵列基板12；2、栅极；3、绝缘介质层；4、非晶硅层和欧姆接触层；5、源极；6、漏极；7、偏振光阻层；8、像素电极层；9、偏振片9。
【具体实施方式】
这里所公开的具体结构和功能细节仅仅是代表性的，并且是用于描述本申请的示例性实施例的目的。但是本申请可以通过许多替换形式来具体实现，并且不应当被解释成仅仅受限于这里所阐述的实施例。
在本申请的描述中，需要理解的是，术语“中心”、“横向”、“上”、“下”、“左”、“右”、“竖直”、“水平”、“顶”、“底”、“内”、“外”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本申请和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本申请的限制。此外，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个该特征。在本申请的描述中，除非另有说明，“多个”的含义是两个或两个以上。另外，术语“包括”及其任何变形，意图在于覆盖不排他的包含。
在本申请的描述中，需要说明的是，除非另有明确的规定和限定，术语“安装”、“相连”、“连接”应做广义理解，例如，可以是固定连接，也可以是可拆卸连接，或一体地连接；可以是机械连接，也可以是电连接；可以是直接相连，也可以通过中间媒介间接相连，可以是两个元件内部的连通。对于本领域的普通技术人员而言，可以具体情况理解上述术语在本申请中的具体含义。
这里所使用的术语仅仅是为了描述具体实施例而不意图限制示例性实施 例。除非上下文明确地另有所指，否则这里所使用的单数形式“一个”、“一项”还意图包括复数。还应当理解的是，这里所使用的术语“包括”和/或“包含”规定所陈述的特征、整数、步骤、操作、单元和/或组件的存在，而不排除存在或添加一个或更多其他特征、整数、步骤、操作、单元、组件和/或其组合。
下面结合附图和较佳的实施例对本申请作进一步详细说明。
作为本申请的一个实施例，所述显示面板包括基板1；若干条第一层导线，所述第一层导线设置在基板1上，所述第一层导线上设置有偏振光阻层7，所述偏振光阻层7可形成具有各向异性的光阻膜，所述第一层导线与所述显示面板的列数据驱动、像素驱动连接。本申请由于偏振光阻膜具有薄膜晶体管保护层所需的介电特性阻隔层功能以及偏振作用，可省掉显示面板的制程中的步骤以及对组后显示装置中一侧偏振片9的贴覆，减少工艺与降低成本。
作为本申请的又一个实施例，所述显示面板包括基板1；若干条第一层导线，所述第一层导线设置在基板1上，所述第一层导线上设置有偏振光阻层7，所述偏振光阻层7可形成具有各向异性的光阻膜，所述第一层导线与所述显示面板的列数据驱动、像素驱动连接。所述偏振光阻层7采用3，4-乙烯二氧噻吩的聚合物作为本体再加入相应的官能基与光敏性聚合物。由于偏振光阻膜具有薄膜晶体管保护层所需的介电特性阻隔层功能以及偏振作用，可省掉显示面板的制程中的步骤以及对组后显示装置中一侧偏振片9的贴覆，减少工艺与降低成本。PEDOT是EDOT(3，4-乙烯二氧噻吩单体)的聚合物，PEDOT具有分子结构简单、能隙小、电导率高等特点。光敏性聚合物，固化时间短，性能好，能耗低，少污染。
作为本申请的又一个实施例，所述显示面板包括基板1；若干条第一层导线，所述第一层导线设置在基板1上，所述第一层导线上设置有偏振光阻层7，所述偏振光阻层7可形成具有各向异性的光阻膜，所述第一层导线与所述显示面板的列数据驱动、像素驱动连接。所述偏振光阻层7采用3，4-乙烯二氧噻吩的聚合物作为本体再加入相应的官能基与光敏性聚合物。所述光敏性聚合物采用聚 硅氧烷丙烯酸酯。由于偏振光阻膜具有薄膜晶体管保护层所需的介电特性阻隔层功能以及偏振作用，可省掉显示面板的制程中的步骤以及对组后显示装置中一侧偏振片9的贴覆，减少工艺与降低成本。PEDOT是EDOT(3，4-乙烯二氧噻吩单体)的聚合物，PEDOT具有分子结构简单、能隙小、电导率高等特点。光敏性聚合物，固化时间短，性能好，能耗低，少污染。聚硅氧烷丙烯酸酯光敏度高、贮存稳定、合成简便、结构类型多样。
作为本申请的又一个实施例，所述显示面板包括基板1；若干条第一层导线，所述第一层导线设置在基板1上，所述第一层导线上设置有偏振光阻层7，所述偏振光阻层7可形成具有各向异性的光阻膜，所述第一层导线与所述显示面板的列数据驱动、像素驱动连接。所述偏振光阻层7采用3，4-乙烯二氧噻吩的聚合物作为本体再加入相应的官能基与光敏性聚合物。所述光敏性聚合物采用聚氨酯丙烯酸酯。由于偏振光阻膜具有薄膜晶体管保护层所需的介电特性阻隔层功能以及偏振作用，可省掉显示面板的制程中的步骤以及对组后显示装置中一侧偏振片9的贴覆，减少工艺与降低成本。PEDOT是EDOT(3，4-乙烯二氧噻吩单体)的聚合物，PEDOT具有分子结构简单、能隙小、电导率高等特点。光敏性聚合物，固化时间短，性能好，能耗低，少污染。聚氨酯丙烯酸酯(PUA)的分子中含有丙烯酸官能团和氨基甲酸酯键，固化后的胶黏剂具有聚氨酯的高耐磨性、粘附力、柔韧性、高剥离强度和优良的耐低温性能以及聚丙烯酸酯卓越的光学性能和耐候性。当然也可以是其他是对光敏感、受光的作用其结构或性质会产生某种显著变化的聚合物，光敏性聚合物，比如，氨基丙烯酸(颜色浅、黏度低、耐化学品性优异、耐候性好、涂层耐磨性好)；二缩三丙二醇二丙烯酸酯(常见的丙烯酸衍生物单体，在光固化或者辐射固化中作交联剂使用，可降低辐射剂量；作为活性稀释剂使用，可明显降低树脂体系的粘度)；丙烯酸羟丙酯(可用于生产胶粘剂、热固性涂料、纤维处理剂及合成树脂共聚物的改性剂，也可用于制备润滑油添加剂等。作为功能性单体用作丙烯酸树脂的交联单体，可以改善产品的粘着性、耐候性、耐药剂性、耐冲击性及光泽。用于制 造合成树脂、胶黏剂、热固性涂料等。也用于制造纤维处理剂、胶乳、印刷油墨、医用材料等)。
作为本申请的又一个实施例，如图1所示为本申请一个实施例的显示面板的薄膜晶体管示意图，所述显示面板包括薄膜晶体管，所述第一层导线包括设置在所述薄膜晶体管的栅极导线段，所述栅极导线段上设置有绝缘介质层3，所述绝缘介质层3上对应栅极导线段设置有非晶硅层，所述非晶硅层上设置有与非晶硅层对应的欧姆接触层，所述欧姆接触层上两端设置有分隔的薄膜晶体管的源极5和漏极6，所述源极5和所述漏极6之间设置有沟道，所述沟道穿过欧姆接触层，所述沟道底部为非晶硅层。基板1上整体覆盖第一层导线，不管是薄膜晶体管的栅极导线段，还是行扫描驱动与薄膜晶体管的栅极导线段的连接段，都采用三层结构，显示面板的整体粘粘性更好，改善第一层导线的品质，提升产品良率，降低生产成本。栅极2(Gate)采用镀上铝(Al)，钼(Mo)的形式。非晶硅层作为通道层采用非结晶硅，当然也可以采用其他半导体层材料。欧姆接触层采用高浓度磷的硅用以降低界面电位差。源极5(Source)和漏极6(Drain)采用钼(Mo)，铝(Al)。铝的重量轻和耐腐蚀，资源十分丰富，以其轻、良好的导电和导热性能、高反射性和耐氧化而被广泛使用。钼或钼合金能实现较好的附着性，一边能与中间导电层的金属如铜、铝、银、金、铬、钥等较好的粘粘，另一边能与显示面板的其他层如基板、光阻层、绝缘层等较好的粘粘，选材方便，制作技术成熟。不需要额外的原材料，降低原材料成本、存储成本，物料清单不需要增加新的材料，方便流程管理和采购，不需要额外的设备设置第二高附着金属层，可以与第一高附着金属层共用一套设备，后期蚀刻也不需要额外的设备和材料。
其中，绝缘介质层3采用氮矽化合物(SiNx)，也就是氮硅化合物。绝缘介质层3也可以采用3，4-乙烯二氧噻吩的聚合物作为本体再加入相应的官能基与光敏性聚合物。PEDOT是EDOT(3，4-乙烯二氧噻吩单体)的聚合物，PEDOT具有分子结构简单、能隙小、电导率高等特点。光敏性聚合物，固化时间短， 性能好，能耗低，少污染。所述光敏性聚合物采用聚硅氧烷丙烯酸酯。聚硅氧烷丙烯酸酯光敏度高、贮存稳定、合成简便、结构类型多样。所述光敏性聚合物采用聚氨酯丙烯酸酯。聚氨酯丙烯酸酯(PUA)的分子中含有丙烯酸官能团和氨基甲酸酯键，固化后的胶黏剂具有聚氨酯的高耐磨性、粘附力、柔韧性、高剥离强度和优良的耐低温性能以及聚丙烯酸酯卓越的光学性能和耐候性。所述绝缘介质层3包括纳米多孔硅，所述纳米多孔硅包括多个彼此连接的空心柱状的子组件，所述子组件切面为六边形，所述子组件中间具有圆形通孔，所述子组件的圆形通孔上设有多个硅孔，所述硅孔内设有锗纳米颗粒。多孔硅的子部件切面六边形方便多个子部件拼接排列，硅孔内设有多个锗纳米颗粒，不影响多孔硅厚度。
具体的，所述第一层导线包括设置在所述薄膜晶体管的源极导线段和漏极导线段，所述源极导线段和所述漏极导线段上设置有偏振光阻层7，所述偏振光阻层7上设有像素电极层8，所述偏振光阻层7对应所述漏极导线段设置有过孔，所述像素电极层8通过所述过孔与所述漏极导线段连接。偏振光阻层7可以采用3，4-乙烯二氧噻吩的聚合物作为本体再加入相应的官能基与光敏性聚合物。PEDOT是EDOT(3，4-乙烯二氧噻吩单体)的聚合物，PEDOT具有分子结构简单、能隙小、电导率高等特点。光敏性聚合物，固化时间短，性能好，能耗低，少污染。所述光敏性聚合物采用聚硅氧烷丙烯酸酯。聚硅氧烷丙烯酸酯光敏度高、贮存稳定、合成简便、结构类型多样。所述光敏性聚合物采用聚氨酯丙烯酸酯。聚氨酯丙烯酸酯(PUA)的分子中含有丙烯酸官能团和氨基甲酸酯键，固化后的胶黏剂具有聚氨酯的高耐磨性、粘附力、柔韧性、高剥离强度和优良的耐低温性能以及聚丙烯酸酯卓越的光学性能和耐候性。由于偏振光阻膜具有薄膜晶体管保护层所需的介电特性阻隔层功能以及偏振作用，可省掉显示面板的制程中的步骤以及对组后显示装置中一侧偏振片9的贴覆，减少工艺与降低成本。
作为本申请的又一个实施例，在制程上所述偏振光阻层7采用化学气相沉 积溅镀在所述第一层导线上。CVD(Chemical Vapor Deposition)化学气相沉积法，在高温下的气相反应，作为涂层的手段而开发，但不只应用于耐热物质的涂层，而且应用于高纯度金属的精制、粉末合成、半导体薄膜等。沉积温度低，薄膜成份易控，膜厚与淀积时间成正比，均匀性，重复性好，台阶覆盖性优良。。CVD(Chemical Vapor Deposition)化学气相沉积法的技术特征在于：高熔点物质能够在低温下合成；析出物质的形态在单晶、多晶、晶须、粉末、薄膜等多种；不仅可以在基片上进行涂层，而且可以在粉体表面涂层等。特别是在低温下可以合成高熔点物质，在节能方面做出了贡献，作为一种新技术是大有前途的。其中，所述偏振光阻层7上设有像素电极层8，在所述偏振光阻层7上直接溅镀、蚀刻所述像素电极层8。偏振光阻层7通过偏振紫外光照射后，光敏聚合物发生光化学反应，形成具有各向异性的光阻膜，同时该光阻膜具有可耐ITO溅镀及蚀刻的特性。
作为本申请的又一个实施例，如图2所示为本申请一个实施例的显示装置，所述显示装置包括背光模组和如上所述的显示面板。
具体的，所述背光模组包括偏振片9，所述显示面板包括薄膜晶体管阵列基板12和彩膜基板11，所述偏振片9仅设置在所述彩膜基板11一侧。显示面板在作为薄膜晶体管阵列基板12的一侧具有偏振功能，可节省cell对组后TFT侧需要贴的偏振片9，从而达到减少制程与节省成本的效益。
需要说明的是，在上述实施例中，所述基板1的材料可以选用玻璃、塑料等。
在上述实施例中，显示面板包括液晶面板、OLED(Organic Light-Emitting Diode)面板、曲面面板、等离子面板等，以液晶面板为例，液晶面板包括阵列基板和彩膜基板11(CF，Color Filter)，所述阵列基板与彩膜基板11相对设置，所述阵列基板与彩膜基板11之间设有液晶和间隔单元(PS，photo spacer)，所述阵列基板上设有薄膜晶体管(TFT，Thin Film Transistor)，彩膜基板11上设有彩色滤光层。
在上述实施例中，彩膜基板11可包括TFT阵列，彩膜及TFT阵列可形成于同一基板1上，阵列基板可包括彩色滤光层。
在上述实施例中，本申请的显示面板可为曲面型面板。
以上内容是结合具体的优选实施方式对本申请所作的进一步详细说明，不能认定本申请的具体实施只局限于这些说明。对于本申请所属技术领域的普通技术人员来说，在不脱离本申请构思的前提下，还可以做出若干简单推演或替换，都应当视为属于本申请的保护范围。

Claims (20)

  1. 一种显示面板，包括
    基板；
    若干条第一层导线，所述第一层导线设置在基板上，所述第一层导线上设置有偏振光阻层，所述偏振光阻层可形成具有各向异性的光阻膜，所述第一层导线与所述显示面板的列数据驱动、像素驱动连接；所述偏振光阻层采用3，4-乙烯二氧噻吩的聚合物作为本体再加入相应的官能基与光敏性聚合物；所述光敏性聚合物采用聚硅氧烷丙烯酸酯，或者，所述光敏性聚合物采用聚氨酯丙烯酸酯；所述显示面板包括薄膜晶体管，所述第一层导线包括设置在所述薄膜晶体管的栅极导线段，所述栅极导线段上设置有绝缘介质层，所述绝缘介质层上对应栅极导线段设置有非晶硅层，所述非晶硅层上设置有与非晶硅层对应的欧姆接触层，所述欧姆接触层上两端设置有分隔的薄膜晶体管的源极和漏极，所述源极和所述漏极之间设置有沟道，所述沟道穿过欧姆接触层，所述沟道底部为非晶硅层，所述第一层导线包括设置在所述薄膜晶体管的源极导线段和漏极导线段，所述源极导线段和所述漏极导线段上设置有偏振光阻层，所述偏振光阻层上设有像素电极层，所述偏振光阻层对应所述漏极导线段设置有过孔，所述像素电极层通过所述过孔与所述漏极导线段连接；所述偏振光阻层采用化学气相沉积溅镀在所述第一层导线上，所述偏振光阻层上设有像素电极层，在所述偏振光阻层上直接溅镀、蚀刻所述像素电极层。
  2. 一种显示面板，包括
    基板；
    若干条第一层导线，所述第一层导线设置在基板上，所述第一层导线上设置有偏振光阻层，所述偏振光阻层可形成具有各向异性的光阻膜，所述第一层导线与所述显示面板的列数据驱动、像素驱动连接。
  3. 如权利要求2所述的显示面板，其中，所述偏振光阻层采用3，4-乙烯 二氧噻吩的聚合物作为本体再加入相应的官能基与光敏性聚合物。
  4. 如权利要求3所述的显示面板，其中，所述光敏性聚合物采用聚硅氧烷丙烯酸酯。
  5. 如权利要求2所述的显示面板，其中，所述偏振光阻层采用3，4-乙烯二氧噻吩的聚合物作为本体再加入相应的官能基与光敏性聚合物，所述光敏性聚合物采用聚硅氧烷丙烯酸酯。
  6. 如权利要求3所述的显示面板，其中，所述光敏性聚合物采用聚氨酯丙烯酸酯。
  7. 如权利要求2所述的显示面板，其中，所述偏振光阻层采用3，4-乙烯二氧噻吩的聚合物作为本体再加入相应的官能基与光敏性聚合物，所述光敏性聚合物采用聚氨酯丙烯酸酯。
  8. 如权利要求2所述的显示面板，其中，所述显示面板包括薄膜晶体管，所述第一层导线包括设置在所述薄膜晶体管的栅极导线段，所述栅极导线段上设置有绝缘介质层，所述绝缘介质层上对应栅极导线段设置有非晶硅层，所述非晶硅层上设置有与非晶硅层对应的欧姆接触层，所述欧姆接触层上两端设置有分隔的薄膜晶体管的源极和漏极，所述源极和所述漏极之间设置有沟道，所述沟道穿过欧姆接触层，所述沟道底部为非晶硅层。
  9. 如权利要求2所述的显示面板，其中，所述偏振光阻层采用3，4-乙烯二氧噻吩的聚合物作为本体再加入相应的官能基与光敏性聚合物，所述显示面板包括薄膜晶体管，所述第一层导线包括设置在所述薄膜晶体管的栅极导线段，所述栅极导线段上设置有绝缘介质层，所述绝缘介质层上对应栅极导线段设置有非晶硅层，所述非晶硅层上设置有与非晶硅层对应的欧姆接触层，所述欧姆接触层上两端设置有分隔的薄膜晶体管的源极和漏极，所述源极和所述漏极之间设置有沟道，所述沟道穿过欧姆接触层，所述沟道底部为非晶硅层。
  10. 如权利要求2所述的显示面板，其中，所述偏振光阻层采用3，4-乙烯二氧噻吩的聚合物作为本体再加入相应的官能基与光敏性聚合物，所述光敏性 聚合物采用聚硅氧烷丙烯酸酯，所述显示面板包括薄膜晶体管，所述第一层导线包括设置在所述薄膜晶体管的栅极导线段，所述栅极导线段上设置有绝缘介质层，所述绝缘介质层上对应栅极导线段设置有非晶硅层，所述非晶硅层上设置有与非晶硅层对应的欧姆接触层，所述欧姆接触层上两端设置有分隔的薄膜晶体管的源极和漏极，所述源极和所述漏极之间设置有沟道，所述沟道穿过欧姆接触层，所述沟道底部为非晶硅层。
  11. 如权利要求2所述的显示面板，其中，所述偏振光阻层采用3，4-乙烯二氧噻吩的聚合物作为本体再加入相应的官能基与光敏性聚合物，所述光敏性聚合物采用聚氨酯丙烯酸酯，所述显示面板包括薄膜晶体管，所述第一层导线包括设置在所述薄膜晶体管的栅极导线段，所述栅极导线段上设置有绝缘介质层，所述绝缘介质层上对应栅极导线段设置有非晶硅层，所述非晶硅层上设置有与非晶硅层对应的欧姆接触层，所述欧姆接触层上两端设置有分隔的薄膜晶体管的源极和漏极，所述源极和所述漏极之间设置有沟道，所述沟道穿过欧姆接触层，所述沟道底部为非晶硅层。
  12. 如权利要求8所述的显示面板，其中，所述第一层导线包括设置在所述薄膜晶体管的源极导线段和漏极导线段，所述源极导线段和所述漏极导线段上设置有偏振光阻层，所述偏振光阻层上设有像素电极层，所述偏振光阻层对应所述漏极导线段设置有过孔，所述像素电极层通过所述过孔与所述漏极导线段连接。
  13. 如权利要求2所述的显示面板，其中，所述偏振光阻层采用3，4-乙烯二氧噻吩的聚合物作为本体再加入相应的官能基与光敏性聚合物，所述显示面板包括薄膜晶体管，所述第一层导线包括设置在所述薄膜晶体管的栅极导线段，所述栅极导线段上设置有绝缘介质层，所述绝缘介质层上对应栅极导线段设置有非晶硅层，所述非晶硅层上设置有与非晶硅层对应的欧姆接触层，所述欧姆接触层上两端设置有分隔的薄膜晶体管的源极和漏极，所述源极和所述漏极之间设置有沟道，所述沟道穿过欧姆接触层，所述沟道底部为非晶硅层，所述第 一层导线包括设置在所述薄膜晶体管的源极导线段和漏极导线段，所述源极导线段和所述漏极导线段上设置有偏振光阻层，所述偏振光阻层上设有像素电极层，所述偏振光阻层对应所述漏极导线段设置有过孔，所述像素电极层通过所述过孔与所述漏极导线段连接。
  14. 如权利要求2所述的显示面板，其中，所述偏振光阻层采用3，4-乙烯二氧噻吩的聚合物作为本体再加入相应的官能基与光敏性聚合物，所述光敏性聚合物采用聚硅氧烷丙烯酸酯，所述显示面板包括薄膜晶体管，所述第一层导线包括设置在所述薄膜晶体管的栅极导线段，所述栅极导线段上设置有绝缘介质层，所述绝缘介质层上对应栅极导线段设置有非晶硅层，所述非晶硅层上设置有与非晶硅层对应的欧姆接触层，所述欧姆接触层上两端设置有分隔的薄膜晶体管的源极和漏极，所述源极和所述漏极之间设置有沟道，所述沟道穿过欧姆接触层，所述沟道底部为非晶硅层，所述第一层导线包括设置在所述薄膜晶体管的源极导线段和漏极导线段，所述源极导线段和所述漏极导线段上设置有偏振光阻层，所述偏振光阻层上设有像素电极层，所述偏振光阻层对应所述漏极导线段设置有过孔，所述像素电极层通过所述过孔与所述漏极导线段连接。
  15. 如权利要求2所述的显示面板，其中，所述偏振光阻层采用3，4-乙烯二氧噻吩的聚合物作为本体再加入相应的官能基与光敏性聚合物，所述光敏性聚合物采用聚氨酯丙烯酸酯，所述显示面板包括薄膜晶体管，所述第一层导线包括设置在所述薄膜晶体管的栅极导线段，所述栅极导线段上设置有绝缘介质层，所述绝缘介质层上对应栅极导线段设置有非晶硅层，所述非晶硅层上设置有与非晶硅层对应的欧姆接触层，所述欧姆接触层上两端设置有分隔的薄膜晶体管的源极和漏极，所述源极和所述漏极之间设置有沟道，所述沟道穿过欧姆接触层，所述沟道底部为非晶硅层，所述第一层导线包括设置在所述薄膜晶体管的源极导线段和漏极导线段，所述源极导线段和所述漏极导线段上设置有偏振光阻层，所述偏振光阻层上设有像素电极层，所述偏振光阻层对应所述漏极导线段设置有过孔，所述像素电极层通过所述过孔与所述漏极导线段连接。
  16. 如权利要求2所述的显示面板，其中，所述偏振光阻层采用化学气相沉积溅镀在所述第一层导线上。
  17. 如权利要求16所述的显示面板，其中，所述偏振光阻层上设有像素电极层，在所述偏振光阻层上直接溅镀、蚀刻所述像素电极层。
  18. 如权利要求2所述的显示面板，其中，所述偏振光阻层采用3，4-乙烯二氧噻吩的聚合物作为本体再加入相应的官能基与光敏性聚合物，所述光敏性聚合物采用聚氨酯丙烯酸酯，或者，所述光敏性聚合物采用聚硅氧烷丙烯酸酯，所述显示面板包括薄膜晶体管，所述第一层导线包括设置在所述薄膜晶体管的栅极导线段，所述栅极导线段上设置有绝缘介质层，所述绝缘介质层上对应栅极导线段设置有非晶硅层，所述非晶硅层上设置有与非晶硅层对应的欧姆接触层，所述欧姆接触层上两端设置有分隔的薄膜晶体管的源极和漏极，所述源极和所述漏极之间设置有沟道，所述沟道穿过欧姆接触层，所述沟道底部为非晶硅层，所述第一层导线包括设置在所述薄膜晶体管的源极导线段和漏极导线段，所述源极导线段和所述漏极导线段上设置有偏振光阻层，所述偏振光阻层上设有像素电极层，所述偏振光阻层对应所述漏极导线段设置有过孔，所述像素电极层通过所述过孔与所述漏极导线段连接，所述偏振光阻层采用化学气相沉积溅镀在所述第一层导线上，所述偏振光阻层上设有像素电极层，在所述偏振光阻层上直接溅镀、蚀刻所述像素电极层。
  19. 一种显示装置，其中，所述显示装置包括背光模组和显示面板，所述显示面板包括
    基板；
    若干条第一层导线，所述第一层导线设置在基板上，所述第一层导线上设置有偏振光阻层，所述偏振光阻层可形成具有各向异性的光阻膜，所述第一层导线与所述显示面板的列数据驱动、像素驱动连接；所述偏振光阻层采用3，4-乙烯二氧噻吩的聚合物作为本体再加入相应的官能基与光敏性聚合物。
  20. 如权利要求19所述的显示装置，其中，所述背光模组包括偏振片，所 述显示面板包括薄膜晶体管阵列基板和彩膜基板，所述偏振片仅设置在所述彩膜基板一侧。
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