WO2018198193A1 - Dispositif à semiconducteur et procédé de fabrication d'un dispositif à semiconducteur - Google Patents

Dispositif à semiconducteur et procédé de fabrication d'un dispositif à semiconducteur Download PDF

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Publication number
WO2018198193A1
WO2018198193A1 PCT/JP2017/016359 JP2017016359W WO2018198193A1 WO 2018198193 A1 WO2018198193 A1 WO 2018198193A1 JP 2017016359 W JP2017016359 W JP 2017016359W WO 2018198193 A1 WO2018198193 A1 WO 2018198193A1
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Prior art keywords
waveguide
semiconductor device
protrusions
plane
layer
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PCT/JP2017/016359
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English (en)
Japanese (ja)
Inventor
直幹 中村
栄治 中井
弘介 篠原
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三菱電機株式会社
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Priority to PCT/JP2017/016359 priority Critical patent/WO2018198193A1/fr
Publication of WO2018198193A1 publication Critical patent/WO2018198193A1/fr

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    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/122—Basic optical elements, e.g. light-guiding paths
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/50—Amplifier structures not provided for in groups H01S5/02 - H01S5/30

Definitions

  • the present invention relates to a semiconductor device and a method for manufacturing the semiconductor device.
  • Patent Documents 1 and 2 disclose an embedded semiconductor device using MMI (Multi-Mode-Interference).
  • MMI Multi-Mode-Interference
  • an abnormally shaped buried growth layer may be formed in the vicinity of the end face of a multimode waveguide.
  • an MMI pattern is formed by providing a certain angle with respect to a surface causing abnormal growth. This suppresses abnormal growth during the burying regrowth.
  • the abnormal growth part is removed by using the wet etching liquid which has an etching rate in a specific surface orientation.
  • optical wavelength multiplexing method light emitted from a plurality of semiconductor lasers having different wavelengths is multiplexed by an optical multiplexer.
  • an optical multiplexer an optical component using a lens and a reflecting mirror or an array waveguide diffraction grating device may be used.
  • a device in which a plurality of semiconductor lasers and an MMI optical waveguide as an optical multiplexer are monolithically integrated has been developed.
  • the MMI optical waveguide for example, a plurality of guided light beams interfere with each other by reflection on the (0-11) plane parallel to the [0-1-1] direction that is the waveguide direction. Thereby, the plurality of guided lights are multiplexed on the output waveguide.
  • an inclined surface inclined by 45 degrees with respect to the waveguide direction is provided at the output end face portion of the MMI optical waveguide. Due to the reflection on the inclined surface, there is a possibility that the combined position and the position of the output waveguide are shifted.
  • a multi-value input MMI optical waveguide generally has a wide overall width.
  • the ratio of the inclined surface becomes large with respect to the MMI length of the MMI optical waveguide. Therefore, the deviation between the multiplexing position and the output waveguide position due to the influence of the inclined surface may be further increased. Therefore, multiplexing cannot be performed, and the performance of the MMI optical waveguide may be degraded.
  • the present invention has been made to solve the above-described problems, and an object of the present invention is to manufacture a semiconductor device and a semiconductor device capable of removing protrusions due to abnormal growth in buried growth while suppressing deterioration of the function of the semiconductor device. Is to get the way.
  • the semiconductor device includes a first waveguide, a second waveguide extending from one end of the first waveguide, and having a width narrower than the first waveguide, the first waveguide, and the second waveguide.
  • a current blocking layer surrounding the waveguide, and the one end of the first waveguide protrudes toward the second waveguide from the connecting portion between the first waveguide and the second waveguide.
  • a plurality of first protrusions are provided on both sides of the second waveguide, respectively, and the (0-1-1) plane is not formed on each of the plurality of first protrusions.
  • a method of manufacturing a semiconductor device includes a first waveguide and a second waveguide extending from one end of the first waveguide and having a narrower width than the first waveguide. At one end, a plurality of first protrusions projecting toward the second waveguide from the connection between the first waveguide and the second waveguide are formed on both sides of the second waveguide.
  • a step of removing the protrusion protruding from the upper surface of one waveguide by etching, and the (0-1-1) plane is not formed on each of the plurality of first protrusions.
  • a plurality of first protrusions are provided at one end of the first waveguide. Since the (0-1-1) plane is not formed on the first protrusion, it is possible to suppress the formation of the (111) A plane on the protrusion due to abnormal growth when the current blocking layer is embedded and grown. . For this reason, the protrusion can be removed by etching. Further, the first convex portion protrudes to the second waveguide side from the connection portion between the first waveguide and the second waveguide. For this reason, the influence on the function of the 1st waveguide by the 1st convex part can be controlled. Therefore, it is possible to remove the protrusion while suppressing the deterioration of the function of the semiconductor device.
  • a plurality of first protrusions are provided at one end of the first waveguide. Since the (0-1-1) plane is not formed on the first protrusion, it is possible to suppress the formation of the (111) A plane on the protrusion due to abnormal growth when the current blocking layer is embedded and grown. . For this reason, the protrusion can be removed by etching. Further, the first convex portion protrudes to the second waveguide side from the connection portion between the first waveguide and the second waveguide. For this reason, the influence on the function of the 1st waveguide by the 1st convex part can be controlled. Therefore, the protrusion can be removed while suppressing a decrease in the function of the semiconductor device.
  • FIG. 1 is a plan view of a semiconductor device according to a first embodiment. It is sectional drawing explaining the process of forming a laser layer. It is sectional drawing which shows the state which etched the laser layer. It is sectional drawing explaining the process of forming a waveguide layer. It is a top view which shows the state which formed the insulating film on the laser layer and the waveguide layer.
  • FIG. 6 is a cross-sectional view obtained by cutting FIG. 5 along a line I-II. It is sectional drawing along the waveguide direction of a laser layer and a waveguide layer.
  • FIG. 5 is a cross-sectional view along the (0-1-1) plane showing a state where the waveguide layer is etched.
  • FIG. 10 is a cross-sectional view along the (0-11) plane showing a state where the waveguide layer is etched.
  • FIG. 5 is a cross-sectional view along the (0-1-1) plane showing a state where a current blocking layer is formed.
  • FIG. 5 is a cross-sectional view along the (0-11) plane showing a state where a current blocking layer is formed.
  • FIG. 10 is a cross-sectional view along the (0-11) plane showing a state where the protrusion is removed. It is a cross-sectional view along the (0-11) plane showing a state where the insulating film is removed.
  • FIG. 5 is a cross-sectional view along the (0-11) plane showing a state in which a contact layer is formed.
  • FIG. 6 is a plan view of a semiconductor device according to a second embodiment.
  • FIG. 6 is a plan view of a semiconductor device according to a third embodiment.
  • FIG. 6 is a plan view of a semiconductor device according to a fourth embodiment.
  • FIG. 10 is a plan view of a semiconductor device according to a fifth embodiment.
  • FIG. 10 is a plan view of a semiconductor device according to a sixth embodiment.
  • a semiconductor device and a method for manufacturing the semiconductor device according to an embodiment of the present invention will be described with reference to the drawings.
  • the same or corresponding components are denoted by the same reference numerals, and repeated description may be omitted.
  • FIG. 1 is a plan view of a semiconductor device 100 according to the first embodiment.
  • the semiconductor device 100 includes a first waveguide 10.
  • the waveguide direction of the first waveguide 10 is the [0-1-1] direction.
  • the side surface along the waveguide direction of the first waveguide 10 is a (0-11) plane.
  • the semiconductor device 100 includes a second waveguide 12.
  • the second waveguide 12 extends from one end of the first waveguide 10 and is narrower than the first waveguide 10. In the present embodiment, the second waveguide 12 is provided at the center of one end of the first waveguide 10.
  • a plurality of first convex portions 14 are provided at one end of the first waveguide 10.
  • the first protrusion 14 protrudes closer to the second waveguide 12 than the connection 16 between the first waveguide 10 and the second waveguide 12.
  • the plurality of first protrusions 14 are provided on both sides of the second waveguide 12, respectively.
  • the first waveguide 10 includes two first convex portions 14.
  • Each of the plurality of first convex portions 14 is a right isosceles triangle in a plan view.
  • the first convex portion 14 is provided so that the base of a right isosceles triangle is in contact with the (0-1-1) plane of the first waveguide 10.
  • the width of the first waveguide 10 is 50 ⁇ m.
  • the height of the 1st convex part 14 is 12um.
  • the semiconductor device 100 further includes a plurality of third waveguides 18.
  • the third waveguide 18 extends from the other end of the first waveguide 10.
  • the semiconductor device 100 includes a plurality of lasers 20.
  • the plurality of lasers 20 are provided at the ends of the plurality of third waveguides 18, respectively.
  • the plurality of third waveguides 18 respectively guide a plurality of laser beams emitted from the plurality of lasers 20.
  • the semiconductor device 100 includes four lasers 20 and four third waveguides 18.
  • the present invention is not limited to this, and the semiconductor device 100 may include at least one laser 20 and at least one third waveguide 18.
  • the laser 20 is a distributed feedback laser diode (DFB-LD: Distributed Feedback-Laser Diode).
  • DFB-LD Distributed Feedback-Laser Diode
  • the plurality of laser beams respectively emitted from the plurality of lasers 20 have different wavelengths.
  • the first waveguide 10, the second waveguide 12, the third waveguide 18 and the laser 20 are surrounded by the current blocking layer 22.
  • the semiconductor device 100 is an embedded optical semiconductor element.
  • the plurality of laser beams are respectively guided to the plurality of third waveguides 18 which are input waveguides and input to the first waveguide 10.
  • the plurality of laser beams interfere with each other in the first waveguide 10.
  • the first waveguide 10 multiplexes a plurality of laser beams to the second waveguide 12 that is an output waveguide. From the above, the first waveguide 10 is a multi-value input MMI optical waveguide. In the semiconductor device 100 according to the present embodiment, communication by the optical wavelength multiplexing method becomes possible.
  • the MMI length 24 of the first waveguide 10 is the length of the side surface along the waveguide direction of the first waveguide 10. That is, the MMI length 24 of the first waveguide 10 is the distance from the connection portion 16 to the other end of the first waveguide 10.
  • the first waveguide 10, the second waveguide 12, the third waveguide 18, the laser 20, and the current blocking layer 22 are formed on the (100) plane of the substrate.
  • the semiconductor device 100 the first waveguide 10, the second waveguide 12, the third waveguide 18, and the laser 20 are monolithically integrated on one chip. Since the MMI optical waveguide is monolithically integrated, the semiconductor device 100 can be reduced in size and cost.
  • FIG. 2 is a cross-sectional view illustrating a process of forming a laser layer.
  • the substrate 26 is made of n-InP.
  • the upper surface of the substrate 26 is a (100) plane.
  • the clad layer 28, the active layer 30, and the clad layer 32 are epitaxially grown in this order on the upper surface of the substrate 26.
  • the cladding layer 28 is made of n-InP.
  • the clad layer 32 is made of p-InP. Epitaxial growth is performed by metal organic chemical vapor deposition (MOCVD) (Metal Organic Chemical Vapor Deposition).
  • MOCVD Metal Organic Chemical Vapor Deposition
  • Insulating film 34 is formed on the cladding layer 32.
  • Insulating film 34 is formed of SiO 2.
  • the insulating film 34 is formed by a plasma CVD (Chemical Vapor Deposition) method.
  • FIG. 3 is a cross-sectional view showing a state in which the laser layer is etched. Thereby, a part of laser layer is removed.
  • the active layer 30 may be removed by etching, and the substrate 26 may not be etched.
  • FIG. 4 is a cross-sectional view illustrating a process of forming a waveguide layer.
  • butt joint growth is performed by MOCVD using the insulating film 34 as a selective growth mask.
  • the cladding layer 36, the optical waveguide layer 38, and the cladding layer 40 are regrown so as to be adjacent to the laser layer.
  • the clad layers 36 and 38 are made of InP.
  • the clad layer 36, the optical waveguide layer 38, and the clad layer 40 constitute a waveguide layer.
  • the insulating film 34 is removed with hydrofluoric acid or the like.
  • FIG. 5 is a plan view showing a state in which the insulating film 42 is formed on the laser layer and the waveguide layer.
  • FIG. 6 is a cross-sectional view obtained by cutting FIG. 5 along the line I-II.
  • FIG. 7 is a cross-sectional view of the laser layer and the waveguide layer along the waveguide direction.
  • the insulating film 42 is formed on the laser layer and the waveguide layer. Insulating film 42 is formed of SiO 2.
  • the insulating film 42 is processed into the pattern shape shown in FIG. This pattern shape corresponds to the shapes of the first waveguide 10, the second waveguide 12, the third waveguide 18, and the laser 20 in the semiconductor device 100.
  • FIG. 8 is a cross-sectional view along the (0-1-1) plane showing a state where the waveguide layer is etched.
  • FIG. 9 is a cross-sectional view along the (0-11) plane showing a state where the waveguide layer is etched.
  • FIG. 9 is a cross-sectional view of a portion corresponding to the III-IV straight line portion of FIG.
  • 2.0 ⁇ m etching is performed from the crystal surface.
  • FIG. 10 is a cross-sectional view along the (0-1-1) plane showing a state where the current blocking layer 22 is formed.
  • FIG. 11 is a cross-sectional view along the (0-11) plane showing a state in which the current blocking layer 22 is formed.
  • the side surfaces of the first waveguide 10, the second waveguide 12, the third waveguide 18, and the laser 20 are embedded in the current blocking layer 22.
  • selective growth is performed by covering a portion not to be buried and grown with the insulating film 42.
  • a protrusion 46 is formed in the current blocking layer 22.
  • the protrusion 46 protrudes from the upper surface of the first waveguide 10. Further, the protrusion 46 is formed around the plurality of first protrusions 14. The protrusion 46 is formed at the boundary between the first protrusion 14 and the current blocking layer 22.
  • FIG. 12 is a cross-sectional view along the (0-11) plane showing a state in which the protrusion 46 is removed.
  • an etchant whose etching rate has crystal plane orientation dependency is used.
  • an etching solution having a high etching rate in a plane orientation other than the (100) plane is used.
  • a mixed solution of acetic acid and hydrobromic acid can be used as an etching solution.
  • This etching solution also has a low etching rate even on the (111) A plane.
  • FIG. 13 is a cross-sectional view along the (0-11) plane showing a state where the insulating film 42 is removed.
  • the insulating film 42 is removed by, for example, hydrofluoric acid.
  • FIG. 14 is a cross-sectional view along the (0-11) plane showing a state in which the contact layer 48 is formed.
  • the electrode 50 is formed on the contact layer 48.
  • FIG. 15 is a cross-sectional view along the (0-11) plane showing a state in which the electrode 50 is formed.
  • an electrode 52 is also formed on the back surface of the substrate 26. The electrodes 50 and 52 are made of metal. Thus, the wafer process process is completed.
  • the embedded growth layer may cause abnormal growth.
  • the protrusion due to the abnormal growth is likely to occur from the (0-1-1) plane of the semiconductor layer. Due to the protrusions, optical loss may occur in the multimode waveguide.
  • the first waveguide 10 has a plurality of first convex portions 14.
  • the first convex portion 14 is provided so as to protrude with respect to the (0-1-1) plane.
  • the (0-1-1) plane is a plane perpendicular to the waveguide direction of the first waveguide 10. For this reason, in the present embodiment, the (0-1-1) plane is not formed on each of the plurality of first convex portions 14. Therefore, the generation of the protrusion 46 can be suppressed as compared with the case where the output end is formed from the (0-1-1) plane.
  • each of the plurality of first convex portions 14 is formed from the second waveguide 12 to the side surface of the first waveguide 10 in the waveguide direction. That is, one end of the first waveguide 10 is formed by only the plurality of first convex portions 14 and the connection portions 16. For this reason, the (0-1-1) plane and the current blocking layer 22 are not in contact with each other at one end of the first waveguide 10. For this reason, generation
  • the (111) A plane is likely to be formed on the protrusion formed by abnormal growth from the (0-1-1) plane.
  • the (111) A plane is generally difficult to etch.
  • the (0-1-1) plane is not formed on the first convex portion 14. For this reason, the (111) A surface is not easily formed on the protrusion 46. Therefore, the protrusion 46 can be removed by etching.
  • the protrusion 46 has a plurality of plane orientations.
  • the etching proceeds from a plurality of plane orientations of the protrusion 46. Therefore, the protrusion 46 can be efficiently removed.
  • the (111) A plane may be included in the plurality of plane orientations of the protrusion 46.
  • the protrusion 46 can be removed even when the protrusion 46 includes the (111) A plane.
  • etching was performed on the protrusion due to abnormal growth in a large-area MMI optical waveguide by the method shown in Patent Document 2, and a protrusion having a height of about 2 ⁇ m remained.
  • the height of the protrusion 46 can be reduced to 0 ⁇ m by etching the protrusion 46.
  • the effect of the present embodiment can be obtained when the first convex portion 14 is a right isosceles triangle in plan view and the height of the first convex portion 14 is 5 to 15 ⁇ m. Has been.
  • the protrusion 46 can be removed even in a large-area MMI optical waveguide such as a multi-value input.
  • the first convex portion 14 is provided closer to the second waveguide 12 than the connection portion 16 between the first waveguide 10 and the second waveguide 12. For this reason, it is possible to suppress the first convex portion 14 from affecting the reflection on the (0-11) plane in the first waveguide 10. Accordingly, it is possible to suppress a decrease in the function of the MMI optical waveguide due to the first convex portion 14. For this reason, it is possible to suppress a decrease in the function of the semiconductor device 100.
  • the loss in the first waveguide 10 according to the present embodiment and the rectangular MMI optical waveguide not provided with the first convex portion 14 was obtained by simulation.
  • a 4-input 1-output MMI optical waveguide is assumed.
  • the loss of the first waveguide 10 according to the present embodiment was 6.56 dB.
  • the loss in the rectangular MMI optical waveguide not provided with the first convex portion 14 was 6.40 dB.
  • the loss of the first waveguide 10 is 0.155 dB larger than the loss of the rectangular MMI optical waveguide, but the difference between the two is in a range where there is almost no influence in actual use. Therefore, in the present embodiment, the protrusion 46 due to abnormal growth can be removed while suppressing a decrease in the function of the semiconductor device 100.
  • the first waveguide 10 is a 4-input 1-output MMI optical waveguide.
  • the semiconductor device 100 may include at least one second waveguide 12 and one third waveguide 18.
  • the semiconductor device 100 may include a plurality of second waveguides 12. In this case, in each of the plurality of second waveguides 12, the first protrusions 14 are provided on both sides of the second waveguide 12.
  • the semiconductor device 100 is an optical semiconductor device that combines and outputs a plurality of laser beams having different wavelengths.
  • the present embodiment includes a first waveguide 10 and a second waveguide 12 that is narrower than the first waveguide 10, and the first waveguide 10 and the second waveguide 12 are current blocking layers.
  • the present invention can be applied to any semiconductor device embedded in the semiconductor device 22.
  • the semiconductor device 100 may be an optical semiconductor device that distributes and outputs a plurality of laser beams having different wavelengths.
  • the first waveguide 10 distributes light from one input waveguide to a plurality of output waveguides.
  • the semiconductor device 100 may be an electro-absorption modulator (EAM).
  • the semiconductor device 100 may be a Mach-Zehnder modulator.
  • the semiconductor device 100 may be a semiconductor optical amplifier (SOA: Semiconductor Optical Amplifier).
  • the waveguide direction of the first waveguide 10 is the [0-1-1] direction.
  • the first waveguide 10, the second waveguide 12, and the third waveguide 18 are on the (100) plane of the substrate 26 by a certain angle with respect to the [0-1-1] direction. You may provide by rotating. That is, the waveguide direction of the first waveguide 10 may be inclined by a certain angle with respect to the [0-1-1] direction. At this time, the rotation angle is set so that the (0-1-1) plane is not formed on the first convex portion 14.
  • the growth proceeds from a plane other than the (0-1-1) plane in the embedding growth process. For this reason, it can suppress that the (111) A surface is formed in the projection part 46. FIG. For this reason, the effect similar to this Embodiment is acquired.
  • FIG. FIG. 16 is a plan view of the semiconductor device 200 according to the second embodiment.
  • the structure of the first waveguide 210 is different from that of the first embodiment.
  • the first waveguide 210 portion of the semiconductor device 200 is enlarged.
  • two or more first convex portions 214 are provided on both sides of the second waveguide 12, respectively.
  • a plurality of first convex portions 214 are provided on each side of the second waveguide 12.
  • three or more first convex portions 214 may be provided on each side of the second waveguide 12.
  • each first protrusion 214 can be made smaller than the first protrusion 14 of the first embodiment. For this reason, the fall of the function of the MMI optical waveguide by the 1st convex part 214 can further be suppressed.
  • one end of the first waveguide 210 is configured with more surfaces than in the first embodiment. Therefore, it becomes easy to form a large number of plane orientations on the protrusion 46 due to abnormal growth. For this reason, the protrusion 46 can be further easily removed by etching from a large number of plane orientations.
  • FIG. 17 is a plan view of the semiconductor device 300 according to the third embodiment.
  • the structure of the first waveguide 310 is different from that of the first embodiment.
  • the first waveguide 310 portion of the semiconductor device 300 is enlarged.
  • each of the plurality of first protrusions 314 is a pentagon in plan view.
  • the shape of the first convex portion 314 in plan view a pentagon By making the shape of the first convex portion 314 in plan view a pentagon, a crystal growing from the surface constituting the first convex portion 314 forms a more complex plane orientation than that of the first embodiment. . Since the etching proceeds from a plurality of surfaces constituting a complicated plane orientation, the protrusions 46 due to abnormal growth can be removed more efficiently.
  • each of the plurality of first protrusions 314 is pentagonal in plan view, but each of the plurality of first protrusions 314 may be polygonal in plan view.
  • the (0-1-1) plane is not formed on each of the first convex portions 314. Thereby, it can suppress that the (111) A surface is formed in the projection part 46 by abnormal growth.
  • the first convex portion 314 may be a triangle in plan view.
  • the shape of the first convex portion 314 in plan view is preferably a triangle close to a right-angled isosceles triangle.
  • the first convex portion 314 approaches the second waveguide 12 to affect the guided light of the second waveguide 12 and the waveguide loss is reduced. It can happen.
  • the height of the first convex portion 314 is extremely low, abnormal growth similar to the case of growing on the (0-1-1) plane may occur. In this case, it may be difficult to remove the protrusion 46 by etching.
  • FIG. 18 is a plan view of the semiconductor device 400 according to the fourth embodiment.
  • the structure of the first waveguide 410 is different from that of the first embodiment.
  • the first waveguide 410 portion of the semiconductor device 400 is enlarged.
  • connection portion 16 the intersections of the plurality of first protrusions 14 and the side surfaces along the waveguide direction of the first waveguide 10 are arranged on a plane perpendicular to the waveguide direction. It was out.
  • connection portion 416 between the first waveguide 410 and the second waveguide 12 is a side surface 454 along the waveguide direction of the plurality of first protrusions 414 and the first waveguide 410. It is provided on the second waveguide 12 side with respect to the intersection 455.
  • the degree of freedom of the structure of the first waveguide 410 is improved.
  • the shift in the waveguide direction between the connection portion 416 and the intersection 455 becomes large, the function of the MMI optical waveguide may be impaired by the first convex portion 414.
  • the distance in the waveguide direction between the connecting portion 416 and the intersection 455 is set in a range that does not impair the function of the MMI optical waveguide.
  • the MMI length 424 of the first waveguide 410 is the distance from the connection portion 416 to the other end of the first waveguide 410.
  • FIG. FIG. 19 is a plan view of a semiconductor device 500 according to the fifth embodiment.
  • the structure of the first waveguide 510 is different from that of the first embodiment.
  • a plurality of second convex portions 556 are provided at the other end of the first waveguide 510.
  • the plurality of second convex portions 556 are provided on both sides of each of the plurality of third waveguides 18.
  • the plurality of second convex portions 556 protrudes toward the plurality of third waveguides 18 from the connection portions 558 between the first waveguide 510 and the plurality of third waveguides 18. It is assumed that the (0-1-1) plane is not formed on each of the plurality of second convex portions 556.
  • a plurality of second convex portions 556 are provided on the input side of the first waveguide 510. For this reason, also on the input side of the first waveguide 510, protrusions caused by abnormal growth during buried growth can be efficiently removed by etching. For this reason, the same effect as in the first embodiment can be obtained also on the input side of the first waveguide 510.
  • FIG. 20 is a plan view of a semiconductor device 600 according to the sixth embodiment.
  • the structure of the first waveguide 610 is different from that of the first embodiment.
  • the first waveguide 610 portion of the semiconductor device 600 is enlarged.
  • the number of first protrusions 614 provided on one side of the second waveguide 12 is different from the number of first protrusions 614 provided on the other side of the second waveguide 12.
  • the shape of the first waveguide 10 is symmetric with respect to the second waveguide 12.
  • the shape of the first waveguide 610 may be asymmetric with respect to the second waveguide 12.
  • the same effect as in the first embodiment can be obtained.
  • the degree of freedom of the structure of the first waveguide 610 is improved as compared with the first embodiment.

Abstract

Un dispositif à semi-conducteur selon la présente invention comprend : un premier guide d'ondes; un deuxième guide d'ondes, qui s'étend à partir d'une extrémité du premier guide d'ondes, et qui a une largeur qui est inférieure à celle du premier guide d'ondes; et une couche de bloc courant entourant le premier guide d'ondes et le second guide d'ondes. Au niveau d'une extrémité du premier guide d'ondes, une pluralité de premières sections en saillie faisant saillie davantage vers le deuxième côté de guide d'ondes qu'une section de connexion entre le premier guide d'ondes et le deuxième guide d'ondes sont disposées sur les deux côtés du deuxième guide d'ondes, et a (0-1-1) plan n'est pas formé sur chacune des premières sections en saillie.
PCT/JP2017/016359 2017-04-25 2017-04-25 Dispositif à semiconducteur et procédé de fabrication d'un dispositif à semiconducteur WO2018198193A1 (fr)

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