WO2018193935A1 - Conductive substrate and method for producing conductive substrate - Google Patents

Abstract

Provided is a conductive substrate which comprises an insulating base material, a metal layer that is formed on at least one surface of the insulating base material, and a roughening plating layer that is formed on the metal layer, and wherein the roughening plating layer contains granular crystals that have an average crystal grain size of from 50 nm to 150 nm (inclusive).

Description

Conductive substrate, method of manufacturing conductive substrate

The present invention relates to a conductive substrate and a method of manufacturing a conductive substrate.

DESCRIPTION OF RELATED ART In various electronic devices, such as a liquid crystal display, a mobile telephone, a digital camera, the electroconductive board which has a wiring pattern which mounted various electronic components is used.

The conductive substrate having a wiring pattern is formed by forming a metal layer on an insulating base material and patterning the metal layer in accordance with a desired wiring pattern. In general, a conductive substrate having a wiring pattern is formed by arranging a resist having a shape corresponding to the wiring pattern to be formed on a metal layer and performing etching.

When the wiring pattern is formed by etching, the etching proceeds not only in the thickness direction of the metal layer but also in the surface direction which is a direction perpendicular to the thickness direction. The progress of etching in the surface direction causes so-called side etching in which the lower part of the resist is also etched.

Therefore, when forming a resist pattern on a metal layer, correction is also performed in advance to make the resist pattern thicker in consideration of the side etching amount. However, such correction has been an obstacle to the miniaturization of the wiring of the conductive substrate having the wiring pattern.

Further, for example, in Patent Document 1, an adhesive layer is formed on the surface of a copper foil, a photosensitive resist is formed on the adhesive layer, the photosensitive resist is exposed in a desired pattern, and the photosensitive resist is developed. A method of forming a copper foil wiring is disclosed, which includes the steps of removing the exposed adhesion layer from the photosensitive resist and etching the copper foil to form a wiring.

Japanese Patent Application Laid-Open No. 2005-039097

However, even with the method for forming copper foil wiring disclosed in Patent Document 1, the occurrence of side etching has not been sufficiently suppressed.

SUMMARY OF THE INVENTION In view of the problems of the prior art described above, an object of the present invention is to provide a conductive substrate in which the occurrence of side etching is suppressed.

In one aspect of the present invention to solve the above problems,
An insulating base material,
A metal layer formed on at least one surface of the insulating substrate;
And a roughening plated layer formed on the metal layer;
The roughened plating layer provides a conductive substrate including granular crystals having an average crystal grain size of 50 nm or more and 150 nm or less.

According to one aspect of the present invention, it is possible to provide a conductive substrate in which the occurrence of side etching is suppressed.

BRIEF DESCRIPTION OF THE DRAWINGS Sectional drawing of the electroconductive substrate which concerns on embodiment of this invention. BRIEF DESCRIPTION OF THE DRAWINGS Sectional drawing of the electroconductive substrate which concerns on embodiment of this invention. BRIEF DESCRIPTION OF THE DRAWINGS Sectional drawing of the electroconductive substrate which concerns on embodiment of this invention. BRIEF DESCRIPTION OF THE DRAWINGS Sectional drawing of the electroconductive substrate which concerns on embodiment of this invention. The top view of the conductive substrate provided with the mesh-like wiring concerning the embodiment of the present invention. FIG. 4 is a configuration example of one of the cross-sectional views along the line AA 'in FIG. 3; FIG. 4 is another configuration example of the cross-sectional view along the line AA 'in FIG. 3; Explanatory drawing of the side etching amount.

Hereinafter, an embodiment of a conductive substrate and a method of manufacturing the conductive substrate of the present invention will be described.
(Conductive substrate)
The conductive substrate of the present embodiment can have an insulating base, a metal layer formed on at least one surface of the insulating base, and a roughened plating layer formed on the metal layer. .

And a roughening plating layer can contain the granular crystal whose average grain size is 50 nm or more and 150 nm or less.

In another embodiment, the roughened plating layer includes needle crystals having an average length of 100 nm to 300 nm, an average width of 30 nm to 80 nm, and an average aspect ratio of 2.0 to 4.5. It can also be done.

Note that the conductive substrate in the present embodiment means a substrate having a metal layer and a roughened plating layer on the surface of the insulating base before patterning the metal layer and the like, and a substrate having the metal layer and the like patterned thereon. That is, the wiring board is included.

Here, first, each member included in the conductive substrate of the present embodiment will be described below.

The material of the insulating substrate is not particularly limited, but is selected from, for example, polyamide resin, polyethylene terephthalate resin, polyethylene naphthalate resin, cycloolefin resin, polyimide resin, polycarbonate resin, etc. One or more resins can be preferably used. In particular, as a material of the insulating substrate, one or more resins selected from polyamide, PET (polyethylene terephthalate), PEN (polyethylene naphthalate), COP (cycloolefin polymer), polyimide, polycarbonate and the like are more preferably used be able to.

The thickness of the insulating substrate is not particularly limited, and can be arbitrarily selected according to the strength required when using the conductive substrate, the specifications based on the application of the conductive substrate, the capacitance, and the like. . The thickness of the insulating substrate is, for example, preferably 10 μm or more and 200 μm or less, more preferably 12 μm or more and 120 μm or less, and still more preferably 12 μm or more and 100 μm or less.

Next, the metal layer will be described.

The material forming the metal layer is not particularly limited, and a material having electrical conductivity suitable for the application can be selected, but copper is used as the material forming the metal layer because of excellent electrical characteristics and easiness of etching treatment. Is preferred. That is, the metal layer preferably contains copper.

When the metal layer contains copper, the material constituting the metal layer is, for example, at least one selected from the group of metals Cu, Ni, Mo, Ta, Ti, V, Cr, Fe, Mn, Co, W It is preferable that it is a material containing a copper alloy with the metal of the above, or copper and one or more metals selected from the above metal group. The metal layer can also be a copper layer composed of copper.

That is, when the metal layer contains copper, the metal layer may be copper, a metal containing copper, or one or more layers selected from copper alloys. When the metal layer contains copper, the metal layer is preferably a layer of copper or a copper alloy. This is because the layer of copper or copper alloy has particularly high electric conductivity (conductivity), and wiring can be easily formed by etching. Further, the layer of copper or a copper alloy is particularly susceptible to side etching to be described later, and in the conductive substrate of the present embodiment, side etching can be suppressed.

Although the method of forming a metal layer is not specifically limited, For example, it is preferable to form so that an adhesive agent may not be arrange | positioned between other members and a metal layer. That is, the metal layer is preferably disposed directly on the top surface of the other member. In addition, a metal layer can be formed and arrange | positioned, for example on the contact layer mentioned later and the upper surface of an insulating base material. For this reason, it is preferable that the metal layer be formed and disposed directly on the upper surface of the adhesive layer or the insulating substrate.

In order to form a metal layer directly on the upper surface of another member, the metal layer preferably has a metal thin film layer deposited using a dry plating method. The dry plating method is not particularly limited. For example, a vapor deposition method, a sputtering method, an ion plating method or the like can be used. In particular, it is preferable to use a sputtering method because control of the film thickness is easy.

When the metal layer is made thicker, the metal thin film layer can be formed by dry plating and then the metal plating layer can be stacked using a wet plating method. Specifically, for example, a metal thin film layer is formed by dry plating on an insulating base material or an adhesive layer, and the metal thin film is used as a feeding layer, and a metal plating layer is formed by electrolytic plating which is a type of wet plating. Can be formed.

When the metal layer is formed only by the dry plating method as described above, the metal layer can be formed of a metal thin film layer. Moreover, when a metal layer is formed combining the dry plating method and the wet plating method, a metal layer can be comprised by a metal thin film layer and a metal plating layer.

As described above, the metal layer is formed directly on the insulating substrate or the adhesive layer by forming the metal layer by combining only the dry plating method or the dry plating method and the wet plating method, without using an adhesive and arranging the metal layer can do.

The thickness of the metal layer is not particularly limited, and when the metal layer is used as a wire, it can be arbitrarily selected according to the magnitude of the current supplied to the wire, the wire width, and the like.

However, if the metal layer is thick, side etching tends to occur because etching takes time to perform the wiring pattern formation, which may cause problems such as difficulty in forming fine lines. Therefore, the thickness of the metal layer is preferably 5 μm or less, more preferably 3 μm or less.

Further, in particular, from the viewpoint of lowering the resistance value of the conductive substrate and enabling sufficient current supply, for example, the thickness of the metal layer is preferably 50 nm or more, more preferably 60 nm or more, and 150 nm It is more preferable that it is more than.

In addition, when a metal layer has a metal thin film layer and a metal plating layer as mentioned above, it is preferable that the sum total of the thickness of a metal thin film layer and the thickness of a metal plating layer is the said range.

The thickness of the metal thin film layer is not particularly limited in either case where the metal layer is constituted of a metal thin film layer or in the case of being constituted of a metal thin film layer and a metal plating layer, for example 50 nm The thickness is preferably 700 nm or less.

Next, the roughening plating layer will be described.

The inventor of the present invention has intensively studied the reason why the side etching can not be sufficiently suppressed when the resist is disposed on the metal layer and the etching is performed. As a result, the adhesion between the metal layer and the resist is not sufficient, and the etching solution may intrude between the metal layer and the resist and spread, which may be a cause that the side etching can not be sufficiently suppressed. It became clear.

Therefore, when the inventors of the present invention further study and provide a roughened plating layer on the metal layer, a resist is disposed on the surface of the conductive substrate, specifically on the surface of the roughened plating layer. It has been found that the adhesion between the roughened plating layer and the resist can be enhanced. For this reason, it was found that side etching can be suppressed by using the conductive substrate having the roughened plating layer, and the present invention was completed.

The roughened plating layer of the conductive substrate of the present embodiment is patterned on its surface, specifically, the surface opposite to the surface of the roughened plating layer facing the insulating substrate, that is, as described later. Preferably, the surface on which the resist is placed is a roughened surface.

From the viewpoint of particularly suppressing the occurrence of side etching, the roughening plated layer preferably contains one or more types of crystals selected from granular crystals and needle crystals.

When the roughening plating layer contains granular crystals, the roughening plating layer preferably contains granular crystals having an average crystal grain size of 50 nm or more and 150 nm or less.

This is because the roughening plating layer contains granular crystals, and the average crystal grain size thereof is 50 nm or more and 150 nm or less, with the surface of the roughening plating layer as the roughening surface and the adhesion between the roughening plating layer and the resist. This is because it is possible to particularly suppress the occurrence of side etching.

When the roughening plating layer contains granular crystals, the average crystal grain size is more preferably 70 nm or more and 150 nm or less.

When the roughening plating layer contains granular crystals, the standard deviation σ of the crystal grain size of the granular crystals is preferably 10 nm or more, and more preferably 15 nm or more. This means that by setting the standard deviation σ to 10 nm or more, the granular crystals contained in the roughened plating layer have a certain degree of dispersion or more, and particularly improve the adhesion between the roughened plating layer and the resist. It is because The upper limit of the standard deviation σ of the crystal grain size of the granular crystal is not particularly limited, but can be, for example, 100 nm or less.

The grain size of the granular crystal is the minimum size that allows complete inclusion of the granular crystal to be measured when the roughened surface of the roughened plating layer is observed with a scanning electron microscope etc. as described later. Means the diameter of a circle.

When the roughening plating layer contains needle crystals, the roughening plating layer has an average length of 100 nm to 300 nm, an average width of 30 nm to 80 nm, and an average aspect ratio of 2.0 to 4.5. It is preferable to include needle crystals of

This is because the roughening plating layer contains needle crystals, and the roughening is achieved by setting the average length to 100 nm to 300 nm, the average width to 30 nm to 80 nm, and the aspect ratio to 2.0 to 4.5. This is because the adhesion between the roughened plating layer and the resist can be enhanced by using the surface of the plating layer as a roughened surface, and the occurrence of side etching can be particularly suppressed.

When the roughened plating layer contains needle crystals, the average length is preferably 120 nm or more and 260 nm or less, the average width is 40 nm or more and 70 nm or less, and the average aspect ratio is more preferably 2.5 or more and 4.5 or less.

When the roughened plating layer contains needle crystals, the standard deviation σ of the length, width, and aspect ratio of the needle crystals is preferably 40 nm or more, 5 nm or more, and 0.5 or more. This means that the needle crystals contained in the roughened plating layer have a certain degree of variation or more by setting the standard deviation σ of the length, width and aspect ratio of the needle crystals to the above-mentioned range, This is because the adhesion between the roughened plating layer and the resist can be particularly enhanced. The upper limit value of the standard deviation σ of the length, width and aspect ratio of the needle crystals is not particularly limited, but can be, for example, 75 nm or less, 50 nm or less, and 5 or less.

The length and width of the needle crystals are the length of the long sides of the needle crystals when the roughened surface of the roughened plating layer is observed with a scanning electron microscope or the like as described later. It means the short side length. The aspect ratio is the length divided by the width.

The average grain size, average length, average width, average aspect ratio, and standard deviation σ of the crystals contained in the roughening plating layer are, for example, those of the roughening plating layer by a scanning electron microscope (SEM: Scanning Electron Microscope). It can be measured and calculated from the observation image when observing the roughened surface.

Although the specific conditions at the time of observing the roughening surface of a roughening plating layer are not specifically limited, For example, it is preferable to expand 50000 times in arbitrary positions. When the roughened plating layer contains granular crystals, the crystal grain size is measured for 20 arbitrarily selected granular crystals in one field of view, and the average value of the crystal grain sizes of the 20 granular crystals is averaged. The grain size can be made. In addition, the standard deviation of the grain size can be calculated from the measured values of the grain size of the 20 granular crystals and the calculated average grain size.

When the roughened plating layer contains needle crystals, the length and width of 20 arbitrarily selected needle crystals can be similarly measured in one field of view, and the aspect ratio can be calculated. And the average value of length, width, and aspect ratio about 20 needle crystals can be made into average length, average width, average aspect ratio. The standard deviation of each of the 20 needle crystals can be calculated from the measured length, the measured width, the calculated aspect ratio, and the calculated average length, average width, and average aspect ratio.

In addition, although it is preferable to select the position of an observation visual field so that 20 or more may be included in 1 visual field about a granular crystal or needle-like crystal, when the visual field which becomes 20 or more can not be selected, less than 20 Granular crystals or needle crystals may be used to calculate an average crystal grain size, an average length, an average width, and an average aspect ratio.

As described above, since the size of crystals such as granular crystals can be calculated with a scanning electron microscope etc. on the roughened surface of the roughened plating layer, the above-mentioned granular crystals and needle crystals are roughened on the roughened plating layer. It can be said that it is a crystal contained in the surface.

Although the material of the roughening plating layer of the conductive substrate of the present embodiment is not particularly limited, for example, a single substance of nickel, a nickel oxide, a nickel hydroxide, and copper can be included.

Here, the state of copper contained in the roughened plating layer is not particularly limited, but copper can be contained, for example, as one or more selected from a single substance of copper and a compound of copper. As a compound of copper, copper oxide, copper hydroxide, etc. can be mentioned, for example.

Therefore, the roughened plating layer contains, for example, a simple substance of nickel, a nickel oxide, and a nickel hydroxide, and is further selected from a simple substance of copper, ie, metallic copper, a copper oxide, and a copper hydroxide. It can contain one or more kinds.

An etching solution for a roughening plating layer, wherein the roughening plating layer contains at least one selected from a simple substance of nickel, nickel oxide, nickel hydroxide, and copper, for example, a simple substance of copper and a compound of copper. The reactivity to H can be made equal to that of the metal layer. For this reason, when the metal layer and the roughening plating layer are simultaneously etched, both layers can be etched uniformly in a plane so as to have a desired shape, and the occurrence of dimensional variation and side etching can be particularly suppressed. .

The method for forming the roughened plating layer is not particularly limited, and can be formed, for example, by a wet method.

As a wet method, it is particularly preferable to use electrolytic plating.

The composition of the plating solution used to form the roughened plating layer by electrolytic plating is not particularly limited. For example, a plating solution containing nickel ions and copper ions can be preferably used.

For example, the nickel ion concentration in the plating solution is preferably 2.0 g / L or more, and more preferably 3.0 g / L or more.

The upper limit value of the nickel ion concentration in the plating solution is not particularly limited either, but is preferably 20.0 g / L or less, and more preferably 15.0 g / L or less.

The copper ion concentration in the plating solution is preferably 0.005 g / L or more, more preferably 0.008 g / L or more.

The upper limit of the copper ion concentration in the plating solution is not particularly limited, but is preferably 4.0 g / L or less, and more preferably 1.02 g / L or less.

When preparing a plating solution, the supply method of nickel ion and copper ion is not specifically limited, For example, it can supply in the state of a salt. For example, sulfamate and sulfate can be suitably used. The type of salt may be the same type of salt for each metal element, or different types of salts may be used simultaneously. Specifically, the plating solution can also be prepared using the same type of salt as, for example, nickel sulfate and copper sulfate. In addition, a plating solution can also be prepared by simultaneously using different types of salts such as, for example, nickel sulfate and copper sulfamate.

And an alkali metal hydroxide can be preferably used as a pH adjuster.

As an alkali metal hydroxide which is a pH adjuster, for example, one or more selected from sodium hydroxide, potassium hydroxide and lithium hydroxide can be used. In particular, as the alkali metal hydroxide which is a pH adjuster, one or more selected from sodium hydroxide and potassium hydroxide is more preferable. This is because sodium hydroxide and potassium hydroxide are particularly easy to obtain and cost-effective.

The pH of the plating solution of the present embodiment is not particularly limited, but is preferably 3.0 or more and 5.2 or less, and more preferably 3.5 or more and 5.0 or less.

In addition, the plating solution can further contain a complexing agent. For example, amidosulfuric acid can be preferably used as the complexing agent.

The content of the complexing agent in the plating solution is not particularly limited, and can be arbitrarily selected.

For example, when using amidosulfuric acid as the complexing agent, the concentration of amidosulfuric acid in the plating solution is not particularly limited, but is preferably 1 g / L to 50 g / L, for example 5 g / L to 20 g / L. Is preferred.

In addition, the shape and size of the crystal | crystallization which a roughening plating layer contains can be selected by adjusting pH of the plating solution at the time of forming a roughening plating layer into a film, and an electric current density. For example, by increasing the pH of the plating solution or increasing the current density at the time of film formation, needle crystals are easily generated, and the pH of the plating solution is lowered, or the current density at the time of film formation is decreased. Crystals tend to form.

For this reason, for example, a preliminary test can be performed to select the conditions such that a roughened plated layer containing crystals of a desired shape and size is obtained.

The thickness of the roughening plating layer is not particularly limited, and the thickness can be selected so that the adhesion to the resist layer can be sufficiently enhanced.

The thickness of the roughened plating layer is, for example, preferably 50 nm or more, and more preferably 70 nm or more. By setting the thickness of the roughened plating layer to 50 nm or more, it is possible to form asperities on the surface sufficiently and to improve the adhesion to the resist layer.

Further, the upper limit of the thickness of the roughening plating layer is not particularly limited, but if it is thicker than necessary, the time required for etching when forming the wiring becomes longer, which leads to an increase in cost. . Therefore, the thickness of the roughening plating layer is preferably 350 nm or less, more preferably 150 nm or less, and still more preferably 145 nm or less.

Moreover, the conductive substrate can also provide arbitrary layers other than the above-mentioned insulating base material, a metal layer, and a roughening plating layer. For example, an adhesive layer can be provided.

A configuration example of the adhesion layer will be described.

As described above, the metal layer can be formed on the insulating substrate, but when the metal layer is directly formed on the insulating substrate, the adhesion between the insulating substrate and the metal layer is not sufficient. There is a case. For this reason, when a metal layer is directly formed on the upper surface of the insulating substrate, the metal layer may be separated from the insulating substrate during the manufacturing process or during use.

Therefore, in the conductive substrate of the present embodiment, an adhesion layer can be disposed on the insulating base in order to enhance the adhesion between the insulating base and the metal layer. That is, a conductive substrate having an adhesive layer between the insulating base and the metal layer can also be obtained.

By arranging the adhesion layer between the insulating base and the metal layer, the adhesion between the insulating base and the metal layer can be enhanced, and peeling of the metal layer from the insulating base can be more reliably suppressed. .

The material constituting the adhesion layer is not particularly limited, and the adhesion between the insulating substrate and the metal layer, the required degree of suppression of light reflection on the surface of the metal layer, and the conductive substrate It can be arbitrarily selected according to the degree of stability to the environment (for example, humidity, temperature) to be used.

The adhesion layer preferably contains, for example, at least one metal selected from Ni, Zn, Mo, Ta, Ti, V, Cr, Fe, Co, W, Cu, Sn, and Mn. The adhesion layer can further contain one or more elements selected from carbon, oxygen, hydrogen and nitrogen.

The adhesion layer can also include a metal alloy containing at least two or more metals selected from Ni, Zn, Mo, Ta, Ti, V, Cr, Fe, Co, W, Cu, Sn, and Mn. Also in this case, the adhesion layer can further contain one or more elements selected from carbon, oxygen, hydrogen, and nitrogen. At this time, as a metal alloy containing at least two or more kinds of metals selected from Ni, Zn, Mo, Ta, Ti, V, Cr, Fe, Co, W, Cu, Sn and Mn, a Cu-Ti-Fe alloy Alternatively, Cu-Ni-Fe alloy, Ni-Cu alloy, Ni-Zn alloy, Ni-Ti alloy, Ni-W alloy, Ni-Cr alloy, Ni-Cu-Cr alloy can be preferably used.

Although the film-forming method of the adhesion layer is not particularly limited, it is preferable to form a film by dry plating. As the dry plating method, for example, a sputtering method, an ion plating method, a vapor deposition method and the like can be preferably used. In the case where the adhesion layer is formed by a dry method, it is more preferable to use a sputtering method because control of the film thickness is easy. As described above, one or more elements selected from carbon, oxygen, hydrogen and nitrogen can be added to the adhesion layer, and in this case, reactive sputtering can be more preferably used.

When the adhesion layer contains one or more elements selected from carbon, oxygen, hydrogen, and nitrogen, the atmosphere for forming the adhesion layer includes one or more elements selected from carbon, oxygen, hydrogen, and nitrogen. Can be added to the adhesive layer by adding a gas containing. For example, one or more selected from carbon monoxide gas and carbon dioxide gas when adding carbon to the adhesion layer, oxygen gas when adding oxygen, hydrogen gas when adding hydrogen, and In the case of adding nitrogen, one or more selected from water can be added with nitrogen gas in the atmosphere for dry plating.

A gas containing one or more elements selected from carbon, oxygen, hydrogen, and nitrogen is preferably added to an inert gas and used as an atmosphere gas at the time of dry plating. The inert gas is not particularly limited but, for example, argon can be preferably used.

By forming the adhesion layer by dry plating as described above, the adhesion between the insulating substrate and the adhesion layer can be enhanced. And since the adhesion layer can contain, for example, a metal as a main component, the adhesion to the metal layer is also high. For this reason, peeling of a metal layer can be suppressed by arrange | positioning an adhesion layer between an insulating base material and a metal layer.

The thickness of the adhesion layer is not particularly limited, but is preferably 3 nm to 50 nm, more preferably 3 nm to 35 nm, and still more preferably 3 nm to 33 nm.

Next, a configuration example of the conductive substrate will be described.

As described above, the conductive substrate of the present embodiment can have the insulating base, the metal layer, and the roughening plated layer. Moreover, layers, such as an adhesion layer, can also be provided arbitrarily.

A specific configuration example will be described below with reference to FIGS. 1A and 1B. FIGS. 1A and 1B show examples of cross-sectional views in a plane parallel to the stacking direction of the insulating base material, the metal layer, and the roughening plating layer of the conductive substrate of the present embodiment.

The conductive substrate of the present embodiment can have, for example, a structure in which a metal layer and a roughening plated layer are laminated in that order from the insulating substrate side on at least one surface of the insulating substrate.

Specifically, for example, as in the case of the conductive substrate 10A shown in FIG. 1A, the metal layer 12 and the roughening plating layer 13 are sequentially laminated one by one on one surface 11a side of the insulating substrate 11 be able to. The roughening plating layer 13 can make surface A which is a surface on the opposite side to the surface facing the insulating base material 11 of the roughening plating layer 13 a roughening surface. Further, as in the case of the conductive substrate 10B shown in FIG. 1B, metal layers 12A and 12B are provided on one surface 11a side of the insulating base material 11 and the other surface (the other surface) 11b side, The roughened plating layers 13A and 13B can be stacked one by one in this order. Also in this case, the roughened plating layers 13A and 13B can have the surfaces A and B, which are surfaces opposite to the surface facing the insulating substrate 11, as roughened surfaces.

Furthermore, for example, an adhesion layer may be provided as an arbitrary layer. In this case, for example, the adhesive layer, the metal layer, and the roughening plating layer can be formed in this order from the insulating substrate side on at least one surface of the insulating substrate.

Specifically, for example, as in the case of the conductive substrate 20A shown in FIG. 2A, the adhesion layer 14, the metal layer 12, and the roughened plating layer 13 are in this order on one surface 11a side of the insulating substrate 11. It can be stacked.

Also in this case, the adhesion layer, the metal layer, and the roughening plating layer may be laminated on both surfaces of the insulating substrate 11. Specifically, as in the conductive substrate 20B shown in FIG. 2B, the adhesion layers 14A and 14B and the metal layer 12A, respectively on the side of the surface 11a of the insulating substrate 11 and the side of the other surface 11b. 12B and roughening plating layers 13A and 13B can be laminated in that order.

In FIG. 1B and FIG. 2B, when the metal layer, the roughening plating layer, etc. are laminated on both sides of the insulating substrate, the insulating substrate 11 is laminated on the upper and lower sides of the insulating substrate 11 as a symmetry plane. Although an example in which the layers are arranged to be symmetrical is shown, the present invention is not limited to such a form. For example, in FIG. 2B, as in the configuration of FIG. 1B, the configuration on one surface 11a side of the insulating base material 11 has the metal layer 12A and the roughened plating layer 13A laminated in that order without providing the adhesion layer 14A. The layers stacked on the upper and lower sides of the insulating substrate 11 may be asymmetric.

The conductive substrate of the present embodiment can be preferably used as a conductive substrate on which various electronic components are mounted. The shape of the wiring of the conductive substrate is not particularly limited, and may have any shape and pattern. Here, a conductive substrate provided with mesh-like wiring will be described as an example.

The conductive substrate provided with the mesh-like wiring can be obtained by etching the metal layer of the conductive substrate of the present embodiment described so far and the roughened plating layer, and in some cases, the adhesion layer.

For example, a two-layer wiring can be used to form a mesh-like wiring. A specific configuration example is shown in FIG. FIG. 3 is a view of the conductive substrate 30 provided with the mesh-like wiring as viewed from the upper surface side in the stacking direction of the metal layer or the like, and the insulating substrate and the metal layer are made Layers other than the wirings 31A and 31B formed by patterning are omitted. Moreover, the wiring 31B which sees through the insulating base material 11 is also shown.

The conductive substrate 30 shown in FIG. 3 has the insulating base 11, a plurality of wirings 31A parallel to the Y-axis direction in the drawing, and a wiring 31B parallel to the X-axis direction. The wirings 31A and 31B are formed by etching a metal layer, and a roughened plating layer (not shown) is formed on the upper surface or the lower surface of the wirings 31A and 31B. Further, the roughening plated layer is etched in the same shape as the wirings 31A and 31B.

The arrangement of the insulating base 11 and the wires 31A and 31B is not particularly limited. The structural example of arrangement | positioning with the insulating base material 11 and wiring is shown to FIG. 4A and FIG. 4B. 4A and 4B correspond to cross-sectional views taken along the line AA 'of FIG.

First, as shown in FIG. 4A, the wirings 31A and 31B may be disposed on the upper and lower surfaces of the insulating base material 11, respectively. In FIG. 4A, roughened plated layers 32A and 32B etched in the same shape as the wiring are disposed on the upper surface of the wiring 31A and the lower surface of the wiring 31B.

Moreover, as shown to FIG. 4B, using the one set of insulating base materials 11, wiring 31A, 31B is arrange | positioned on the upper and lower surfaces on both sides of one insulating base material 11, and one wiring 31B is an insulation It may be disposed between the base materials 11. Also in this case, roughened plated layers 32A and 32B etched in the same shape as the wirings are disposed on the top surfaces of the wirings 31A and 31B. In addition to the metal layer and the roughening plating layer, an adhesion layer may be provided as described above. For this reason, in any case of FIG. 4A and FIG. 4B, for example, an adhesive layer may be provided between the insulating base 11 and either one or both of the wiring 31A and the wiring 31B. When the adhesion layer is provided, the adhesion layer is also preferably etched to the same shape as the wirings 31A and 31B.

For example, as shown in FIG. 1B, the conductive substrate having the mesh-like wiring shown in FIGS. 3 and 4A is provided with metal layers 12A and 12B and roughened plating layers 13A and 13B on both sides of the insulating substrate 11. It can be formed from a conductive substrate.

The case where the conductive substrate of FIG. 1B is formed will be described by way of example. First, the metal layer 12A and the roughening plated layer 13A on one surface 11a side of the insulating substrate 11 are arranged in the Y-axis direction in FIG. Etching is performed such that a plurality of parallel linear patterns are disposed at predetermined intervals along the X-axis direction. The X-axis direction in FIG. 1B means a direction parallel to the width direction of each layer. Also, the Y-axis direction in FIG. 1B means a direction perpendicular to the paper surface in FIG. 1B.

Then, a plurality of linear patterns parallel to the X-axis direction in FIG. 1B are separated from the metal layer 12B on the other surface 11b side of the insulating substrate 11 in the Y-axis direction at predetermined intervals in FIG. 1B. Do the etching to be placed along.

By the above operation, the conductive substrate having the mesh-like wiring shown in FIG. 3 and FIG. 4A can be formed. In addition, the etching of both surfaces of the insulating base material 11 can also be performed simultaneously. That is, the etching of the metal layers 12A and 12B and the roughening plated layers 13A and 13B may be performed simultaneously. Further, in FIG. 4A, the conductive substrate having an adhesion layer patterned in the same shape as the wires 31A and 31B between the wires 31A and 31B and the insulating base 11 is further conductive as shown in FIG. 2B. It can manufacture by etching similarly using a board | substrate.

The conductive substrate having the mesh-like wiring shown in FIG. 3 can also be formed by using two conductive substrates shown in FIG. 1A or FIG. 2A. The case where two conductive substrates shown in FIG. 1A are formed will be described by way of example. For the two conductive substrates shown in FIG. 1A, the metal layer 12 and the roughening plated layer 13 are parallel to the X-axis direction. Etching is performed such that a plurality of linear patterns are arranged along the Y-axis direction at predetermined intervals. Then, by aligning two conductive substrates in a direction such that the linear patterns formed on the conductive substrates by the above etching process intersect with each other, a conductive substrate provided with a mesh-like wiring is obtained. be able to. The surface to be bonded when bonding the two conductive substrates is not particularly limited. For example, the surface A in FIG. 1A in which the metal layer 12 and the like are laminated and the other surface 11b in FIG. 1A in which the metal layer 12 and the like are not laminated are bonded to obtain the structure shown in FIG. It can also be done.

Further, for example, the other surfaces 11b in FIG. 1A where the metal layer 12 and the like of the insulating base material 11 are not laminated may be bonded to each other to have a cross section shown in FIG. 4A.

In FIGS. 4A and 4B, a conductive substrate having an adhesive layer patterned in the same shape as the wires 31A and 31B between the wires 31A and 31B and the insulating base 11 is shown in FIG. 1A. Instead of the conductive substrate, the conductive substrate shown in FIG. 2A can be used.

The width of the wires and the distance between the wires in the conductive substrate having the mesh-like wires shown in FIGS. 3, 4A and 4B are not particularly limited, and, for example, according to the amount of current flowing in the wires It can be selected.

However, according to the conductive substrate of the present embodiment, the roughened plating layer is provided, and even when the roughened plating layer and the metal layer are etched and patterned, the occurrence of side etching is suppressed, and roughening is performed. The plated layer and the metal layer can be patterned into a desired shape. Specifically, for example, a wire having a wire width of 10 μm or less can be formed. For this reason, the conductive substrate of the present embodiment preferably includes a wire having a wire width of 10 μm or less. The lower limit of the wiring width is not particularly limited, but can be, for example, 3 μm or more.

Although FIG. 3, FIG. 4A, and FIG. 4B show an example in which mesh-like wiring (wiring pattern) is formed by combining linear-shaped wiring, the present invention is not limited to such a form, and the shape of wiring pattern Also, the wiring that forms the wiring pattern can have an arbitrary shape.

Moreover, although the example of the conductive substrate which has a wiring pattern which left the roughening plating layer was shown in FIG. 4A and FIG. 4B, the roughening plating layer is a layer provided in order to improve adhesiveness with a resist. Therefore, the wiring pattern can be removed after formation. In the case of removal, the roughened plating layer can be removed by, for example, a general sulfuric acid / hydrogen peroxide water microetching solution.

According to the conductive substrate of the present embodiment described above, the roughened plating layer is stacked on the metal layer formed on at least one surface of the insulating substrate. Therefore, the adhesion to the resist is high, and the occurrence of side etching can be suppressed.
(Method of manufacturing conductive substrate)
Next, one configuration example of the method of manufacturing the conductive substrate of the present embodiment will be described.

The method for producing a conductive substrate of the present embodiment can have the following steps.
The metal layer formation process of forming a metal layer on the at least one surface of an insulating base material.
Roughening plating layer formation process of forming a roughening plating layer on a metal layer.

And in a roughening plating layer formation process, a roughening plating layer can be formed into a film by an electrolysis method using a plating solution containing nickel ion and copper ion.

The method of manufacturing the conductive substrate of the present embodiment will be specifically described below.

In addition, the electroconductive substrate as stated above can be suitably manufactured with the manufacturing method of the electroconductive substrate of this embodiment. For this reason, since it can be set as the same structure as the case of the above-mentioned conductive substrate except the point explained below, explanation is omitted in part.

The insulating substrate to be subjected to the metal layer forming step can be prepared in advance. The insulating substrate may be cut into any size in advance, if necessary.

The metal layer preferably has a metal thin film layer as described above. The metal layer can also have a metal thin film layer and a metal plating layer. For this reason, a metal layer formation process can have the process of forming a metal thin film layer, for example by the dry plating method. In the metal layer forming step, a step of forming a metal thin film layer by dry plating, a step of forming a metal plating layer by electroplating, which is a kind of wet plating, using the metal thin film as a power feeding layer, May be included.

It does not specifically limit as a dry plating method used at the process of forming a metal thin film layer, For example, a vapor deposition method, sputtering method, or ion plating method etc. can be used. In addition, a vacuum evaporation method can be preferably used as an evaporation method. As the dry plating method used in the step of forming the metal thin film layer, it is more preferable to use the sputtering method because the control of the film thickness is particularly easy.

Next, the process of forming a metal plating layer is demonstrated. The conditions in the step of forming the metal plating layer by the wet plating method, that is, the conditions of the electroplating treatment are not particularly limited, and various conditions in the usual way may be adopted. For example, a metal plating layer can be formed by supplying a base having a metal thin film layer formed in a plating tank containing a metal plating solution and controlling the current density and the conveyance speed of the base.

Next, the roughening plating layer forming step will be described.

In the roughening plating layer forming step, a roughening plating layer containing, for example, a single substance of nickel, a nickel oxide, a nickel hydroxide, and copper can be formed.

The roughened plating layer can be formed by a wet method. Specifically, for example, a roughened plating layer can be formed on a metal layer by an electrolytic method, for example, an electrolytic plating method, in a plating tank containing the plating solution described above, using the metal layer as a feed layer. As described above, the roughened plating layer is formed by electrolytic plating using the metal layer as the feeding layer, thereby forming the roughened plating layer on the entire surface of the metal layer opposite to the surface facing the insulating substrate. it can.

When forming a roughening plating layer, the shape and size of the crystal contained in the roughening plating layer can be selected by adjusting the pH of the plating solution and the current density. For example, by increasing the pH of the plating solution or increasing the current density at the time of film formation, needle crystals are easily generated, and the pH of the plating solution is lowered, or the current density at the time of film formation is decreased. Crystals tend to form.

For this reason, for example, a preliminary test can be performed to select the conditions such that a roughened plated layer containing crystals of a desired shape and size is obtained.

The plating solution has already been described, and thus the description thereof is omitted.

In the method of manufacturing a conductive substrate of the present embodiment, an arbitrary step can be further performed in addition to the above-described steps.

For example, when forming an adhesion layer between an insulating base material and a metal layer, an adhesion layer formation process which forms an adhesion layer on the field which forms a metal layer of an insulating base can be implemented. When the adhesion layer formation step is carried out, the metal layer formation step can be carried out after the adhesion layer formation step, and in the metal layer formation step, on the substrate on which the adhesion layer is formed on the insulating substrate in this step. A metal thin film layer can be formed.

In the adhesion layer forming step, the film formation method of the adhesion layer is not particularly limited, but it is preferable to form a film by a dry plating method. As the dry plating method, for example, a sputtering method, an ion plating method, a vapor deposition method and the like can be preferably used. In the case where the adhesion layer is formed by a dry method, it is more preferable to use a sputtering method because control of the film thickness is easy. As described above, one or more elements selected from carbon, oxygen, hydrogen and nitrogen can be added to the adhesion layer, and in this case, reactive sputtering can be more preferably used.

The conductive substrate obtained by the method for producing a conductive substrate of the present embodiment can be used, for example, in various applications such as a conductive substrate on which various electronic components are mounted and used. And when using for various uses, it is preferable that the metal layer and roughening plating layer which are contained in the conductive substrate of this embodiment are patterned. When the adhesion layer is provided, it is preferable that the adhesion layer is also patterned. The metal layer and the roughening plating layer, and in some cases the adhesion layer can be patterned, for example, according to the desired wiring pattern, and the metal layer and the roughening plating layer, in some cases the adhesion layer may also have the same shape It is preferable to be patterned.

For this reason, the manufacturing method of the conductive substrate of this embodiment can have the patterning process of patterning a metal layer and a roughening plating layer. When the adhesion layer is formed, the patterning step can be a step of patterning the adhesion layer, the metal layer, and the roughened plating layer.

The specific procedure of the patterning step is not particularly limited, and can be performed by any procedure. For example, in the case of the conductive substrate 10A in which the metal layer 12 and the roughening plating layer 13 are stacked on the insulating substrate 11 as shown in FIG. 1A, first, a resist having a desired pattern on the surface A on the roughening plating layer 13 A resist placement step can be performed to place the Then, an etching step can be performed in which the etching solution is supplied to the surface A on the roughened plating layer 13, ie, the side on which the resist is disposed.

The etching solution used in the etching step is not particularly limited, and can be arbitrarily selected according to the composition of the metal layer, the roughened plating layer, and the like. For example, when the metal layer and the roughened plating layer exhibit substantially the same reactivity with the etching solution, an etching solution generally used for etching the metal layer can be preferably used.

For example, a mixed aqueous solution containing one or more selected from sulfuric acid, hydrogen peroxide (hydrogen peroxide water), hydrochloric acid, cupric chloride and ferric chloride can be preferably used as the etching solution. The content of each component in the etching solution is not particularly limited.

The etching solution can be used at room temperature, but can also be used by heating to enhance the reactivity, for example, it can be used by heating to 40 ° C. or more and 50 ° C. or less.

In addition, as shown in FIG. 1B, a patterning process is also performed on the conductive substrate 10B in which the metal layers 12A and 12B and the roughening plated layers 13A and 13B are laminated on one surface 11a and the other surface 11b of the insulating base material 11. Can be implemented. In this case, for example, a resist disposing step of disposing a resist having a desired pattern on the surface A and the surface B on the roughened plating layers 13A and 13B can be performed. Then, an etching step can be performed in which the etching solution is supplied to the surface A and the surface B on the roughened plating layers 13A and 13B, that is, the surface on which the resist is disposed.

The pattern to be formed in the etching step is not particularly limited, and may have an arbitrary shape. For example, in the case of the conductive substrate 10A shown in FIG. 1A, as described above, the metal layer 12 and the roughening plating layer 13 are patterned to include a plurality of straight lines and lines (zigzag straight lines) bent into jagged lines. It can also be done.

Further, in the case of the conductive substrate 10B shown in FIG. 1B, the metal layer 12A and the metal layer 12B may form a pattern so as to form a mesh-like wiring. In this case, the roughening plating layer 13A is preferably patterned to have the same shape as the metal layer 12A, and the roughening plating layer 13B is formed to have the same shape as the metal layer 12B.

For example, after patterning the metal layer 12 etc. about the above-mentioned conductive substrate 10A at a patterning process, the lamination process which laminates | stacks two or more patterned conductive substrates can also be implemented. When laminating, for example, by laminating so that the patterns of the metal layers of the respective conductive substrates intersect, it is also possible to obtain a laminated conductive substrate provided with a mesh-like wiring.

Although the method of fixing the laminated two or more conductive substrates is not particularly limited, for example, it can be fixed by an adhesive or the like.

The conductive substrate obtained by the method for producing a conductive substrate of the present embodiment described above has a structure in which a roughened plating layer is laminated on a metal layer formed on at least one surface of an insulating substrate. ing. And the roughening plating layer is a roughening plating layer whose surface opposite to the surface facing the insulating base is a roughening surface. Therefore, the adhesion to the resist is high, and the occurrence of side etching can be suppressed.

The present invention will be described by way of specific examples and comparative examples, but the present invention is not limited to these examples.
(Evaluation method)
The samples produced in the following examples and comparative examples were evaluated by the following methods.
(1) Component Analysis of Roughened Plating Layer Component analysis of the roughened plating layer was performed using an X-ray photoelectron spectrometer (manufactured by PHI, type: Quanta SXM). In addition, monochromatization Al (1486.6 eV) was used for X-ray source.

As described later, in each of the following examples and comparative examples, a conductive substrate having the structure of FIG. 1A was produced. Therefore, the surface A exposed to the outside of the roughened plating layer 13 in FIG. 1A was subjected to Ar ion etching, and a Ni 2 P spectrum and a Cu LMM spectrum inside 10 nm from the outermost surface were measured.

As a result, it was confirmed that each of Examples 1 to 10 and Comparative Examples 1 to 4 contained a single substance of nickel, a nickel oxide, a nickel hydroxide, and copper.
(2) Shape and size of the crystal contained in the roughening plating layer The surface opposite to the surface facing the insulating substrate, which is the roughening surface of the roughening plating layer, specifically, the surface A of FIG. 1A The surface of the roughened plating layer was observed with a scanning electron microscope to evaluate the shape and size of the crystal contained in the roughened plating layer.

In the evaluation, first, the area was enlarged 50000 times at an arbitrary position on the roughened surface of the roughened plating layer. Then, the shape of the crystal present in the observation area was observed. When granular crystals are observed, granular or needle-like crystals are indicated as needle-like in the crystal shape column of Table 1 when observed.

Then, when granular crystals were observed, 20 granular crystals to be evaluated were selected, and the average crystal grain size and the standard deviation σ were measured and calculated. The grain size of the granular crystals means the diameter of a circle of the smallest size which completely incorporates the granular crystals for which the measurement of the granular crystals is to be carried out. Further, when needle crystals were observed, 20 needle crystals to be evaluated were selected, and the average length, average width, average aspect ratio, and standard deviation σ were measured and calculated.

When the granular crystals are evaluated, the average value and the standard deviation of the crystal grain sizes are described in the “grain size / length” column of Table 1.

When acicular crystals are evaluated, the average value of the length and the standard deviation are described in the column of "grain size / length" in Table 1, and the width, the average value of aspect ratio, and the standard deviation are Each is described in the column of "width" and "aspect ratio" in Table 1.

Since each parameter has already been described, the description is omitted here.
(3) Amount of Side Etching First, a dry film resist (Hitachi Chemical Co., Ltd. RY3310) was attached to the surface of the roughened plated layer of the conductive substrate obtained in the following Examples and Comparative Examples by a lamination method. Then, ultraviolet exposure was performed through a photomask, and the resist was dissolved and developed with a 1% aqueous solution of sodium carbonate. A sample having resists of a plurality of linear patterns parallel to one another was thus produced on the roughened plating layer.

The sample was then immersed in an etchant at 30 ° C. consisting of 10 wt% sulfuric acid and 3 wt% hydrogen peroxide.

With respect to the obtained sample, a cross section parallel to the stacking direction of the layers of the conductive substrate and perpendicular to the linear pattern of the resist was observed without peeling the resist. In this case, as shown in FIG. 5, the cross-sectional shape in which the patterned metal layer 52, the patterned roughened plating layer 53, and the resist 54 are stacked on the insulating base material 51 is observed. Then, the distance L between the end 54 a in the width direction of the resist and the end 52 a in the width direction of the patterned metal layer 52 was measured as the side etching amount.

The conductive substrate is taken out of the etching solution 60 seconds, 120 seconds, and 180 seconds after the start of immersion in the etching solution, and after cleaning, the side etching amount is evaluated as described above. The
(Sample preparation conditions)
A conductive substrate was produced under the conditions described below, and evaluated by the above-mentioned evaluation method.
Example 1
A conductive substrate having the structure shown in FIG. 1A was produced.
(Metal layer formation process)
A copper layer was formed as a metal layer on one surface of an insulating base made of a long polyethylene terephthalate resin (PET) having a length of 300 m, a width of 250 mm, and a thickness of 100 μm.

In the metal layer forming step, a metal thin film layer forming step and a metal plating layer forming step were performed.

First, the metal thin film layer forming step will be described.

In the metal thin film layer forming step, a copper thin film layer was formed as a metal thin film layer on one surface of the insulating base using the above-mentioned insulating base as a base.

In the metal thin film layer forming step, first, the above-mentioned insulating substrate from which water was removed by heating in advance to 60 ° C. was placed in the chamber of the sputtering apparatus.

Next, after evacuating the chamber to 1 × 10 ⁻³ Pa, argon gas was introduced to adjust the pressure in the chamber to 1.3 Pa.

Electric power was supplied to a copper target set in advance at the cathode of the sputtering apparatus, and a copper thin film layer was formed to a thickness of 0.7 μm on one surface of the insulating substrate.

Next, in the metal plating layer forming step, a copper plating layer was formed as the metal plating layer. The copper plating layer was formed by electroplating so that the thickness of the copper plating layer was 0.3 μm.

By performing the metal thin film layer forming process and the metal plating layer forming process described above, a copper layer having a thickness of 1.0 μm was formed as a metal layer.

The substrate having the 1.0 μm thick copper layer formed on the insulating base, which was prepared in the metal layer forming step, is immersed in 20 g / L sulfuric acid for 30 seconds and washed, and then the following roughened plating layer forming step is performed. Carried out.
(Roughened plating layer formation process)
In the roughening plating layer formation step, a roughening plating layer was formed on one surface of the copper layer by electrolytic plating using a plating solution.

A plating solution containing nickel ions, copper ions, amidosulfuric acid, and sodium hydroxide was prepared as a plating solution. Nickel ions and copper ions were supplied to the plating solution by adding nickel sulfate hexahydrate and copper sulfate pentahydrate.

Then, each component was added and prepared so that the concentration of nickel ion in the plating solution was 6.5 g / L, the concentration of copper ion was 0.2 g / L, and the concentration of amidosulfuric acid was 11 g / L.

In addition, an aqueous solution of sodium hydroxide was added to the plating solution to adjust the pH of the plating solution to 3.6.

In the roughening plating layer formation step, electrolytic plating was performed under the conditions of a plating solution temperature of 40 ° C., a current density of 0.08 A / dm ² , and a plating time of 180 seconds to form a roughening plating layer.

The film thickness of the roughening plating layer formed became 111 nm.

The conductive substrate obtained by the above steps was subjected to component analysis of the roughened plating layer described above, evaluation of the shape and size of crystals contained in the roughened plating layer, and evaluation of the side etching amount. The results are shown in Tables 1 and 2.
[Examples 2 to 10]
As shown in Table 1, the nickel ion concentration, the copper ion concentration, the pH, the current density at the time of film formation of the roughening plating layer, and the plating time in the plating solution when forming the roughening plating layer in each example. A conductive substrate was produced and evaluated in the same manner as in Example 1 except that it was changed to The results are shown in Tables 1 and 2.
[Comparative Example 1 to Comparative Example 4]
As shown in Table 1, the nickel ion concentration, the copper ion concentration, the pH, the current density at the time of film formation of the roughening plating layer, and the plating time in the plating solution when forming the roughening plating layer in each example. A conductive substrate was produced and evaluated in the same manner as in Example 1 except that it was changed to The results are shown in Table 1.

According to the results shown in Table 1, in Examples 1 to 10, it was confirmed that the roughened plating layer contains granular or needle-like crystals. In the case of granular crystals, the average crystal grain size is 50 nm to 150 nm, and in the case of needle crystals, the average length is 100 nm to 300 nm, and the average width is 30 nm to 80 nm, and the average aspect ratio is 2.0. It could be confirmed that the above was 4.5 or less.

On the other hand, in Comparative Examples 1 to 4, although it was confirmed that the roughened plating layer contained granular or needle-like crystals, the size thereof did not satisfy the above-mentioned range.

As a result, it was confirmed that the side etching amount can be sufficiently suppressed in Examples 1 to 10, while the side etching amount is large in Comparative Examples 1 to 4.

The conductive substrate and the method of manufacturing the conductive substrate have been described above in the embodiments and examples and the like, but the present invention is not limited to the embodiments and the examples and the like. Various changes and modifications are possible within the scope of the present invention as set forth in the claims.

This application claims the priority of Japanese Patent Application No. 2017-081580, filed on Apr. 17, 2017, to the Japanese Patent Office, and the entire contents of Japanese Patent Application No. 2017-081580 I will use it.

10A, 10B, 20A, 20B, 30 Conductive substrate 11, 51 Insulating base 12, 12A, 12B, 52 Metal layer 13, 13A, 13B, 32A, 32B, 53 roughened plating layer

Claims (5)

1. An insulating base material,
   A metal layer formed on at least one surface of the insulating substrate;
   And a roughening plated layer formed on the metal layer;
   The roughened plating layer is a conductive substrate including granular crystals having an average crystal grain size of 50 nm or more and 150 nm or less.
2. An insulating base material,
   A metal layer formed on at least one surface of the insulating substrate;
   And a roughening plated layer formed on the metal layer;
   The conductive substrate includes needle-like crystals having an average length of 100 nm to 300 nm, an average width of 30 nm to 80 nm, and an average aspect ratio of 2.0 to 4.5.
3. The conductive substrate according to claim 1, wherein a thickness of the roughening plating layer is 50 nm or more and 350 nm or less.
4. The conductive substrate according to any one of claims 1 to 3, wherein the metal layer is a layer of copper or a copper alloy.
5. A metal layer forming step of forming a metal layer on at least one surface of the insulating substrate;
   Forming a roughened plating layer on the metal layer;
   The said roughening plating layer formation process is a manufacturing method of the conductive substrate which forms a film of the said roughening plating layer by an electrolysis method using the plating solution containing a nickel ion and a copper ion.

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