JP6954345B2 - Conductive substrate, manufacturing method of conductive substrate - Google Patents

Description

The present invention relates to a conductive substrate and a method for manufacturing a conductive substrate.

In various electronic devices such as liquid crystal displays, mobile phones, and digital cameras, conductive substrates having wiring patterns on which various electronic components are mounted are used.

The conductive substrate having a wiring pattern is formed by forming a metal layer on an insulating base material and patterning the metal layer according to a desired wiring pattern. A conductive substrate having a wiring pattern is generally formed by arranging a resist having a shape corresponding to the wiring pattern to be formed on a metal layer and performing etching.

By the way, when the wiring pattern is formed by etching, the etching proceeds not only in the thickness direction of the metal layer but also in the surface direction which is the direction perpendicular to the thickness direction. As the etching progresses in the plane direction, so-called side etching occurs in which the lower part of the resist is also etched.

Therefore, when the resist pattern is formed on the metal layer, the resist pattern is thickened in advance in consideration of the amount of side etching. However, such correction has been an obstacle to the miniaturization of wiring on a conductive substrate having a wiring pattern.

Further, for example, in Patent Document 1, an adhesive layer is formed on the surface of a copper foil, a photosensitive resist is formed on the adhesive layer, the photosensitive resist is exposed in a desired pattern, and the photosensitive resist is developed. A method for forming a wiring of a copper foil including a step of removing the adhesive layer exposed from the photosensitive resist and etching the copper foil to form a wiring is disclosed.

Japanese Patent Application Laid-Open No. 2005-039097

However, even with the copper foil wiring forming method disclosed in Patent Document 1, the occurrence of side etching could not be sufficiently suppressed.

In view of the above problems of the prior art, one aspect of the present invention is to provide a conductive substrate in which the occurrence of side etching is suppressed.

In order to solve the above problems, in one aspect of the present invention,
Insulating base material and
A metal layer formed on at least one surface of the insulating base material and
It has a roughened plating layer formed on the metal layer, and has
The roughened plating layer provides a conductive substrate containing granular crystals having an average crystal grain size of 50 nm or more and 150 nm or less.

According to one aspect of the present invention, it is possible to provide a conductive substrate in which the occurrence of side etching is suppressed.

Sectional drawing of the conductive substrate which concerns on embodiment of this invention. Sectional drawing of the conductive substrate which concerns on embodiment of this invention. Sectional drawing of the conductive substrate which concerns on embodiment of this invention. Sectional drawing of the conductive substrate which concerns on embodiment of this invention. Top view of a conductive substrate provided with mesh-like wiring according to an embodiment of the present invention. A configuration example of one cross-sectional view taken along the line AA'in FIG. Another configuration example of the cross-sectional view taken along the line AA'in FIG. Explanatory drawing of the side etching amount.

Hereinafter, an embodiment of the conductive substrate of the present invention and a method for manufacturing the conductive substrate will be described.
(Conductive substrate)
The conductive substrate of the present embodiment can have an insulating base material, a metal layer formed on at least one surface of the insulating base material, and a roughened plating layer formed on the metal layer. ..

The roughened plating layer can contain granular crystals having an average crystal grain size of 50 nm or more and 150 nm or less.

In another form, the roughened plating layer contains acicular crystals having an average length of 100 nm or more and 300 nm or less, an average width of 30 nm or more and 80 nm or less, and an average aspect ratio of 2.0 or more and 4.5 or less. You can also do it.

The conductive substrate in the present embodiment is a substrate having a metal layer and a roughened plating layer on the surface of an insulating base material and a substrate in which the metal layer or the like is patterned before patterning the metal layer or the like. That is, it includes a wiring board.

Here, first, each member included in the conductive substrate of this embodiment will be described below.

The material of the insulating base material is not particularly limited, but is selected from, for example, polyamide resin, polyethylene terephthalate resin, polyethylene naphthalate resin, cycloolefin resin, polyimide resin, polycarbonate resin and the like. One or more kinds of resins can be preferably used. In particular, as the material of the insulating base material, one or more resins selected from polyamide, PET (polyethylene terephthalate), PEN (polyethylene naphthalate), COP (cycloolefin polymer), polyimide, polycarbonate and the like are more preferably used. be able to.

The thickness of the insulating base material is not particularly limited, and can be arbitrarily selected according to the strength required for the conductive substrate, the specifications based on the application of the conductive substrate, the capacitance, and the like. .. The thickness of the insulating base material is preferably, for example, 10 μm or more and 200 μm or less, more preferably 12 μm or more and 120 μm or less, and further preferably 12 μm or more and 100 μm or less.

Next, the metal layer will be described.

The material constituting the metal layer is not particularly limited, and a material having an electrical conductivity suitable for the intended use can be selected. However, copper is used as the material constituting the metal layer because of its excellent electrical characteristics and ease of etching treatment. Is preferable. That is, the metal layer preferably contains copper.

When the metal layer contains copper, the material constituting the metal layer is, for example, Cu and at least one kind selected from the metal group of Ni, Mo, Ta, Ti, V, Cr, Fe, Mn, Co, and W. It is preferable that the material contains a copper alloy with the above-mentioned metal, or a material containing copper and one or more kinds of metals selected from the above metal group. Further, the metal layer may be a copper layer made of copper.

That is, when the metal layer contains copper, the metal layer can be one or more types of layers selected from copper, a metal containing copper, and a copper alloy. When the metal layer contains copper, the metal layer is preferably a layer of copper or a copper alloy. This is because the copper or copper alloy layer has a particularly high electrical conductivity (conductivity), and wiring can be easily formed by etching. Further, the copper or copper alloy layer is particularly prone to side etching, which will be described later, and this is because the side etching can be suppressed in the conductive substrate of the present embodiment.

The method for forming the metal layer is not particularly limited, but for example, it is preferable to form the metal layer without arranging an adhesive between the other member and the metal layer. That is, it is preferable that the metal layer is directly arranged on the upper surface of the other member. The metal layer can be formed and arranged on, for example, an adhesion layer described later or an upper surface of an insulating base material. Therefore, it is preferable that the metal layer is directly formed and arranged on the adhesion layer or the upper surface of the insulating base material.

Since the metal layer is directly formed on the upper surface of the other member, it is preferable that the metal layer has a metal thin film layer formed by using a dry plating method. The dry plating method is not particularly limited, but for example, a vapor deposition method, a sputtering method, an ion plating method, or the like can be used. In particular, it is preferable to use the sputtering method because the film thickness can be easily controlled.

When the metal layer is made thicker, the metal plating layer can be laminated by using a wet plating method after forming the metal thin film layer by dry plating. Specifically, for example, a metal thin film layer is formed on an insulating base material or an adhesive layer by a dry plating method, the metal thin film layer is used as a feeding layer, and a metal plating layer is formed by electroplating, which is a kind of wet plating method. Can be formed.

When the metal layer is formed only by the dry plating method as described above, the metal layer can be formed of a metal thin film layer. Further, when the metal layer is formed by combining the dry plating method and the wet plating method, the metal layer can be composed of a metal thin film layer and a metal plating layer.

As described above, the metal layer is formed and arranged directly on the insulating base material or the adhesive layer without using an adhesive by forming the metal layer only by the dry plating method or by combining the dry plating method and the wet plating method. can do.

The thickness of the metal layer is not particularly limited, and when the metal layer is used as wiring, it can be arbitrarily selected according to the magnitude of the current supplied to the wiring, the wiring width, and the like.

However, when the metal layer becomes thick, it takes time to perform etching to form a wiring pattern, so that side etching is likely to occur, which may cause problems such as difficulty in forming fine wires. Therefore, the thickness of the metal layer is preferably 5 μm or less, and more preferably 3 μm or less.

Further, from the viewpoint of lowering the resistance value of the conductive substrate and enabling sufficient current to be supplied, for example, the thickness of the metal layer is preferably 50 nm or more, more preferably 60 nm or more, and 150 nm. The above is more preferable.

When the metal layer has the metal thin film layer and the metal plating layer as described above, the total of the thickness of the metal thin film layer and the thickness of the metal plating layer is preferably in the above range.

In either case where the metal layer is composed of a metal thin film layer or a metal thin film layer and a metal plating layer, the thickness of the metal thin film layer is not particularly limited, but is, for example, 50 nm. It is preferably 700 nm or more and preferably 700 nm or less.

Next, the roughened plating layer will be described.

The inventor of the present invention has diligently investigated the reason why side etching cannot be sufficiently suppressed when a resist is placed on a metal layer and etching is performed. As a result, the adhesion between the metal layer and the resist is not sufficient, and the etching solution may infiltrate and spread between the metal layer and the resist, which is the reason why the side etching cannot be sufficiently suppressed. It became clear.

Therefore, the inventor of the present invention further studies, and when the resist is arranged on the surface of the conductive substrate, specifically, the surface of the roughened plating layer by providing the roughened plating layer on the metal layer. , It was found that the adhesion between the roughened plating layer and the resist can be improved. Therefore, it has been found that side etching can be suppressed by using a conductive substrate having such a roughened plating layer, and the present invention has been completed.

The roughened plating layer of the conductive substrate of the present embodiment is patterned on the surface thereof, specifically, the surface of the roughened plating layer opposite to the surface facing the insulating base material, that is, as described later. It is preferable that the surface on which the resist is placed is a roughened surface.

From the viewpoint of particularly suppressing the occurrence of side etching, the roughened plating layer preferably contains one or more kinds of crystals selected from granular crystals and acicular crystals.

When the roughened plating layer contains granular crystals, the roughened plating layer preferably contains granular crystals having an average grain size of 50 nm or more and 150 nm or less.

This is because the roughened plating layer contains granular crystals and the average crystal grain size thereof is 50 nm or more and 150 nm or less, so that the surface of the roughened plating layer is used as a roughened surface to improve the adhesion between the roughened plating layer and the resist. This is because it can be enhanced and the occurrence of side etching can be particularly suppressed.

When the roughened plating layer contains granular crystals, the average crystal grain size thereof is more preferably 70 nm or more and 150 nm or less.

When the roughened plating layer contains granular crystals, the standard deviation σ of the crystal grain size of the granular crystals is preferably 10 nm or more, and more preferably 15 nm or more. This means that by setting the standard deviation σ to 10 nm or more, the granular crystals contained in the roughened plating layer have a certain degree of variation or more, and the adhesion between the roughened plating layer and the resist is particularly enhanced. Because it can be done. The upper limit of the standard deviation σ of the crystal grain size of the granular crystal is not particularly limited, but can be, for example, 100 nm or less.

The crystal grain size of the granular crystal is the minimum size that completely includes the granular crystal to be measured when the roughened surface of the roughened plating layer is observed with a scanning electron microscope or the like as described later. It means the diameter of a circle.

When the roughened plating layer contains acicular crystals, the roughened plating layer has an average length of 100 nm or more and 300 nm or less, an average width of 30 nm or more and 80 nm or less, and an average aspect ratio of 2.0 or more and 4.5 or less. It is preferable to contain acicular crystals of.

This is because the roughened plating layer contains acicular crystals, the average length of which is 100 nm or more and 300 nm or less, the average width is 30 nm or more and 80 nm or less, and the aspect ratio is 2.0 or more and 4.5 or less. This is because the surface of the plating layer is used as a roughened surface to improve the adhesion between the roughened plating layer and the resist, and the occurrence of side etching can be particularly suppressed.

When the roughened plating layer contains acicular crystals, it is more preferable that the average length is 120 nm or more and 260 nm or less, the average width is 40 nm or more and 70 nm or less, and the average aspect ratio is 2.5 or more and 4.5 or less.

When the roughened plating layer contains acicular crystals, the standard deviations σ of the length, width, and aspect ratio of the acicular crystals are preferably 40 nm or more, 5 nm or more, and 0.5 or more, respectively. This means that the standard deviation σ of the length, width, and aspect ratio of the acicular crystals is within the above range, so that the acicular crystals contained in the roughened plating layer have a certain degree of variation or more. This is because the adhesion between the roughened plating layer and the resist can be particularly improved. The upper limit of the standard deviation σ of the length, width, and aspect ratio of the needle-shaped crystal is not particularly limited, but can be, for example, 75 nm or less, 50 nm or less, and 5 or less, respectively.

The length and width of the acicular crystal are the length of the long side of the acicular crystal when the roughened surface of the roughened plating layer is observed with a scanning electron microscope or the like as described later. It means the length of the short side. Then, the aspect ratio is a value obtained by dividing the length by the width.

The average grain size, average length, average width, average aspect ratio, and standard deviation σ of the crystals contained in the roughened plating layer can be determined by, for example, a scanning electron microscope (SEM) of the roughened plating layer. It can be measured and calculated from the observation image when observing the roughened surface.

The specific conditions for observing the roughened surface of the roughened plating layer are not particularly limited, but it is preferable to magnify the roughened plating layer 50,000 times at an arbitrary position, for example. When the roughened plating layer contains granular crystals, the crystal grain size is measured for 20 granular crystals arbitrarily selected in one visual field, and the average value of the crystal grain sizes for the 20 granular crystals is averaged. It can be a crystal grain size. Further, the standard deviation of the crystal grain size can be calculated from the measured value of the crystal grain size of 20 granular crystals and the calculated average crystal grain size.

When the roughened plating layer contains acicular crystals, the length and width of 20 acicular crystals arbitrarily selected in one field of view can be measured in the same manner, and the aspect ratio can be calculated. Then, the average value of the length, width, and aspect ratio of the 20 needle-shaped crystals can be used as the average length, average width, and average aspect ratio. Further, each standard deviation can be calculated from the measured values of the length and width of the 20 needle-shaped crystals, the calculated value of the aspect ratio, and the calculated average length, average width, and average aspect ratio.

It is preferable to select the position of the observation field of view so that 20 or more of the granular crystals or acicular crystals are included in one field of view, but if it is not possible to select a field of view of 20 or more, the number is less than 20. Granular crystals or acicular crystals may be used to calculate the average crystal grain size, average length, average width, and average aspect ratio.

As described above, since the size of crystals such as granular crystals can be calculated for the roughened surface of the roughened plating layer by a scanning electron microscope or the like, the above-mentioned granular crystals and acicular crystals are roughened in the roughened plating layer. It can be said that it is a crystal contained in the surface.

The material of the roughened plating layer of the conductive substrate of the present embodiment is not particularly limited, and may include, for example, a simple substance of nickel, a nickel oxide, a nickel hydroxide, and copper.

Here, the state of copper contained in the roughened plating layer is not particularly limited, but copper can be contained as, for example, one or more selected from a simple substance of copper and a compound of copper. Examples of the copper compound include copper oxide and copper hydroxide.

For this reason, the roughened plating layer contains, for example, a single nickel, a nickel oxide, and a nickel hydroxide, and is further selected from a simple copper, that is, metallic copper, a copper oxide, and a copper hydroxide. Can contain one or more types.

The roughened plating layer contains an etching solution for the roughened plating layer by containing one or more selected from elemental nickel, nickel oxide, nickel hydroxide, and copper, for example, elemental copper and a compound of copper. The reactivity with respect to the metal layer can be made equivalent to that of the metal layer. Therefore, when the metal layer and the roughened plating layer are etched at the same time, both layers can be uniformly etched so as to have a desired shape and in a plane, and dimensional variation and side etching can be particularly suppressed. ..

The method for forming the roughened plating layer is not particularly limited, and for example, it can be formed by a wet method.

As the wet method, it is particularly preferable to use the electrolytic plating method.

The composition of the plating solution used when forming the roughened plating layer by the electrolytic plating method is not particularly limited. For example, a plating solution containing nickel ions and copper ions can be preferably used.

For example, the nickel ion concentration in the plating solution is preferably 2.0 g / L or more, and more preferably 3.0 g / L or more.

The upper limit of the nickel ion concentration in the plating solution is not particularly limited, but is preferably 20.0 g / L or less, and more preferably 15.0 g / L or less, for example.

The copper ion concentration in the plating solution is preferably 0.005 g / L or more, and more preferably 0.008 g / L or more.

The upper limit of the copper ion concentration in the plating solution is not particularly limited, but is preferably 4.0 g / L or less, more preferably 1.02 g / L or less, for example.

When preparing the plating solution, the method of supplying nickel ions and copper ions is not particularly limited, and for example, it can be supplied in the form of a salt. For example, sulfamate and sulfate can be preferably used. The type of salt may be the same type for each metal element, and different types of salts may be used at the same time. Specifically, for example, a plating solution can be prepared using the same type of salt as nickel sulfate and copper sulfate. It is also possible to prepare a plating solution by using different kinds of salts at the same time, such as nickel sulfate and copper sulfamate.

Then, an alkali metal hydroxide can be preferably used as the pH adjuster.

As the alkali metal hydroxide as the pH adjuster, for example, one or more selected from sodium hydroxide, potassium hydroxide and lithium hydroxide can be used. In particular, the alkali metal hydroxide as the pH adjuster is more preferably one or more selected from sodium hydroxide and potassium hydroxide. This is because sodium hydroxide and potassium hydroxide are particularly easily available and are excellent in terms of cost.

The pH of the plating solution of the present embodiment is not particularly limited, but is preferably 3.0 or more and 5.2 or less, and more preferably 3.5 or more and 5.0 or less.

In addition, the plating solution may further contain a complexing agent. As the complexing agent, for example, amidosulfuric acid can be preferably used.

The content of the complexing agent in the plating solution is not particularly limited and can be arbitrarily selected.

For example, when amidosulfuric acid is used as the complexing agent, the concentration of amidosulfuric acid in the plating solution is not particularly limited, but is preferably 1 g / L or more and 50 g / L or less, and 5 g / L or more and 20 g / L or less. It is preferable to have.

By adjusting the pH of the plating solution and the current density when forming the roughened plating layer, the shape and size of the crystals contained in the roughened plating layer can be selected. For example, by increasing the pH of the plating solution or increasing the current density during film formation, acicular crystals are likely to occur, and by lowering the pH of the plating solution or lowering the current density during film formation, granules are likely to occur. Crystals are likely to form.

Therefore, for example, a preliminary test can be performed, and the conditions can be selected so that the roughened plating layer contains crystals having a desired shape and size.

The thickness of the roughened plating layer is not particularly limited, and the thickness can be selected so as to sufficiently enhance the adhesion to the resist layer.

The thickness of the roughened plating layer is preferably, for example, 50 nm or more, and more preferably 70 nm or more. This is because by setting the thickness of the roughened plating layer to 50 nm or more, unevenness can be sufficiently formed on the surface and the adhesion to the resist layer can be improved.

Further, the upper limit of the thickness of the roughened plating layer is not particularly limited, but if it is made thicker than necessary, the time required for etching when forming the wiring becomes long, which leads to an increase in cost. .. Therefore, the thickness of the roughened plating layer is preferably 350 nm or less, more preferably 150 nm or less, and further preferably 145 nm or less.

Further, the conductive substrate may be provided with any layer other than the above-mentioned insulating base material, metal layer and roughened plating layer. For example, an adhesion layer can be provided.

An example of the structure of the adhesion layer will be described.

As described above, the metal layer can be formed on the insulating base material, but when the metal layer is directly formed on the insulating base material, the adhesion between the insulating base material and the metal layer is not sufficient. In some cases. Therefore, when the metal layer is formed directly on the upper surface of the insulating base material, the metal layer may be peeled off from the insulating base material during the manufacturing process or during use.

Therefore, in the conductive substrate of the present embodiment, in order to improve the adhesion between the insulating base material and the metal layer, the adhesion layer can be arranged on the insulating base material. That is, a conductive substrate having an adhesion layer between the insulating base material and the metal layer can also be used.

By arranging the adhesion layer between the insulating base material and the metal layer, the adhesion between the insulating base material and the metal layer can be enhanced, and the peeling of the metal layer from the insulating base material can be more reliably suppressed. ..

The material constituting the adhesion layer is not particularly limited, and the adhesion to the insulating base material and the metal layer, the required degree of suppression of light reflection on the surface of the metal layer, and the conductive substrate can be used. It can be arbitrarily selected according to the degree of stability with respect to the environment in which it is used (for example, humidity and temperature).

The adhesion layer preferably contains, for example, at least one metal selected from Ni, Zn, Mo, Ta, Ti, V, Cr, Fe, Co, W, Cu, Sn, and Mn. The adhesion layer may further contain one or more elements selected from carbon, oxygen, hydrogen and nitrogen.

The adhesion layer may also contain a metal alloy containing at least two or more metals selected from Ni, Zn, Mo, Ta, Ti, V, Cr, Fe, Co, W, Cu, Sn, and Mn. Also in this case, the adhesion layer may further contain one or more elements selected from carbon, oxygen, hydrogen and nitrogen. At this time, the Cu—Ti—Fe alloy is a metal alloy containing at least two or more kinds of metals selected from Ni, Zn, Mo, Ta, Ti, V, Cr, Fe, Co, W, Cu, Sn, and Mn. Alternatively, Cu—Ni—Fe alloys, Ni—Cu alloys, Ni—Zn alloys, Ni—Ti alloys, Ni—W alloys, Ni—Cr alloys, and Ni—Cu—Cr alloys can be preferably used.

The method for forming the adhesion layer is not particularly limited, but it is preferable to form the film by a dry plating method. As the dry plating method, for example, a sputtering method, an ion plating method, a vapor deposition method, or the like can be preferably used. When the adhesion layer is formed by the dry method, it is more preferable to use the sputtering method because the film thickness can be easily controlled. As described above, one or more elements selected from carbon, oxygen, hydrogen, and nitrogen can be added to the adhesion layer, and in this case, the reactive sputtering method can be more preferably used.

When the adhesion layer contains one or more elements selected from carbon, oxygen, hydrogen, and nitrogen, one or more elements selected from carbon, oxygen, hydrogen, and nitrogen are included in the atmosphere when the adhesion layer is formed. By adding a gas containing the above, it can be added to the adhesion layer. For example, one or more selected from carbon monoxide gas and carbon dioxide gas when carbon is added to the adhesion layer, oxygen gas when oxygen is added, hydrogen gas and hydrogen gas when hydrogen is added. When nitrogen is added to one or more selected from water, nitrogen gas can be added to the atmosphere at the time of dry plating.

A gas containing one or more elements selected from carbon, oxygen, hydrogen, and nitrogen is preferably added to the inert gas to be an atmospheric gas for dry plating. The inert gas is not particularly limited, but for example, argon can be preferably used.

By forming the adhesion layer by the dry plating method as described above, the adhesion between the insulating base material and the adhesion layer can be improved. Further, since the adhesion layer can contain, for example, a metal as a main component, the adhesion to the metal layer is also high. Therefore, by arranging the adhesion layer between the insulating base material and the metal layer, peeling of the metal layer can be suppressed.

The thickness of the adhesion layer is not particularly limited, but is preferably 3 nm or more and 50 nm or less, more preferably 3 nm or more and 35 nm or less, and further preferably 3 nm or more and 33 nm or less.

Next, a configuration example of the conductive substrate will be described.

As described above, the conductive substrate of the present embodiment can have an insulating base material, a metal layer, and a roughened plating layer. Further, a layer such as an adhesion layer can be optionally provided.

A specific configuration example will be described below with reference to FIGS. 1A and 1B. 1A and 1B show an example of a cross-sectional view of the conductive substrate of the present embodiment on a plane parallel to the stacking direction of the insulating base material, the metal layer, and the roughened plating layer.

The conductive substrate of the present embodiment can have, for example, a structure in which a metal layer and a roughened plating layer are laminated in this order from the insulating base material side on at least one surface of the insulating base material.

Specifically, for example, as in the conductive substrate 10A shown in FIG. 1A, the metal layer 12 and the roughened plating layer 13 are laminated layer by layer on one surface 11a side of the insulating base material 11. be able to. In the roughened plating layer 13, the surface A, which is the surface of the roughened plating layer 13 opposite to the surface facing the insulating base material 11, can be used as the roughened surface. Further, as in the conductive substrate 10B shown in FIG. 1B, the metal layers 12A and 12B are provided on one surface 11a side of the insulating base material 11 and the other surface (the other surface) 11b side, respectively. The roughened plating layers 13A and 13B can be laminated layer by layer in that order. In this case as well, the roughened plating layers 13A and 13B can have the surface A and the surface B, which are surfaces opposite to the surface facing the insulating base material 11, as roughened surfaces.

Further, as an arbitrary layer, for example, an adhesion layer may be provided. In this case, for example, a structure may be formed in which an adhesion layer, a metal layer, and a roughened plating layer are formed in this order from the insulating base material side on at least one surface of the insulating base material.

Specifically, for example, as in the conductive substrate 20A shown in FIG. 2A, the adhesion layer 14, the metal layer 12, and the roughened plating layer 13 are arranged in this order on one surface 11a side of the insulating base material 11. Can be laminated.

In this case as well, a structure in which an adhesion layer, a metal layer, and a roughened plating layer are laminated on both sides of the insulating base material 11 can be used. Specifically, like the conductive substrate 20B shown in FIG. 2B, the adhesive layers 14A and 14B and the metal layer 12A are provided on one surface 11a side and the other surface 11b side of the insulating base material 11, respectively. 12B and the roughened plating layers 13A and 13B can be laminated in that order.

In addition, in FIGS. 1B and 2B, when a metal layer, a roughened plating layer, etc. are laminated on both sides of the insulating base material, the insulating base material 11 is laminated on the upper and lower sides of the insulating base material 11 with the insulating base material 11 as a symmetrical plane. An example in which the layers are arranged symmetrically is shown, but the present invention is not limited to this form. For example, in FIG. 2B, the structure of one surface 11a of the insulating base material 11 is the same as that of FIG. 1B, and the metal layer 12A and the roughened plating layer 13A are laminated in this order without providing the adhesion layer 14A. The layers may be laminated on the upper and lower sides of the insulating base material 11 in an asymmetrical structure.

The conductive substrate of this embodiment can be preferably used as a conductive substrate on which various electronic components are mounted and used. The shape of the wiring of the conductive substrate is not particularly limited, and any shape and pattern can be used. Here, a conductive substrate provided with mesh-shaped wiring will be described as an example.

The conductive substrate provided with the mesh-like wiring can be obtained by etching the metal layer of the conductive substrate of the present embodiment described so far, the roughened plating layer, and in some cases, the adhesion layer.

For example, a mesh-like wiring can be obtained by two-layer wiring. A specific configuration example is shown in FIG. FIG. 3 shows a view of the conductive substrate 30 provided with mesh-shaped wiring from the upper surface side in the stacking direction of the metal layer or the like, and the insulating base material and the metal layer are provided so that the wiring pattern can be easily understood. The description is omitted for the layers other than the wirings 31A and 31B formed by patterning. Further, the wiring 31B that can be seen through the insulating base material 11 is also shown.

The conductive substrate 30 shown in FIG. 3 has an insulating base material 11, a plurality of wirings 31A parallel to the Y-axis direction in the drawing, and wirings 31B parallel to the X-axis direction in the drawing. The wirings 31A and 31B are formed by etching a metal layer, and a roughened plating layer (not shown) is formed on the upper surface or the lower surface of the wirings 31A and 31B. Further, the roughened plating layer is etched into the same shape as the wirings 31A and 31B.

The arrangement of the insulating base material 11 and the wirings 31A and 31B is not particularly limited. A configuration example of the arrangement of the insulating base material 11 and the wiring is shown in FIGS. 4A and 4B. 4A and 4B are cross-sectional views taken along the line AA'of FIG.

First, as shown in FIG. 4A, wirings 31A and 31B may be arranged on the upper and lower surfaces of the insulating base material 11, respectively. In FIG. 4A, roughened plating layers 32A and 32B etched in the same shape as the wiring are arranged on the upper surface of the wiring 31A and the lower surface of the wiring 31B.

Further, as shown in FIG. 4B, one set of insulating base materials 11 is used, wirings 31A and 31B are arranged on the upper and lower surfaces with one insulating base material 11 interposed therebetween, and one wiring 31B is insulated. It may be arranged between the sex substrates 11. Also in this case, the roughened plating layers 32A and 32B etched in the same shape as the wiring are arranged on the upper surfaces of the wirings 31A and 31B. As described above, an adhesion layer may be provided in addition to the metal layer and the roughened plating layer. Therefore, in either case of FIGS. 4A and 4B, for example, an adhesion layer can be provided between one or both of the wiring 31A and the wiring 31B and the insulating base material 11. When the adhesion layer is provided, it is preferable that the adhesion layer is also etched in the same shape as the wirings 31A and 31B.

The conductive substrate having the mesh-like wiring shown in FIGS. 3 and 4A includes, for example, metal layers 12A and 12B and roughened plating layers 13A and 13B on both sides of the insulating base material 11 as shown in FIG. 1B. It can be formed from a conductive substrate.

Explaining the case of forming using the conductive substrate of FIG. 1B as an example, first, the metal layer 12A and the roughened plating layer 13A on one surface 11a side of the insulating base material 11 are arranged in the Y-axis direction in FIG. 1B. Etching is performed so that a plurality of parallel linear patterns are arranged at predetermined intervals along the X-axis direction. The X-axis direction in FIG. 1B means a direction parallel to the width direction of each layer. Further, the Y-axis direction in FIG. 1B means a direction perpendicular to the paper surface in FIG. 1B.

Then, a plurality of linear patterns parallel to the X-axis direction in FIG. 1B form the metal layer 12B and the roughened plating layer 13B on the other surface 11b side of the insulating base material 11 in the Y-axis direction at predetermined intervals. Etching is performed so that they are arranged along the line.

By the above operation, the conductive substrate having the mesh-like wiring shown in FIGS. 3 and 4A can be formed. Both sides of the insulating base material 11 can be etched at the same time. That is, the metal layers 12A and 12B and the roughened plating layers 13A and 13B may be etched at the same time. Further, in FIG. 4A, the conductive substrate having an adhesion layer patterned between the wirings 31A and 31B and the insulating base material 11 in the same shape as the wirings 31A and 31B is the conductive substrate shown in FIG. 2B. It can be produced by performing the same etching using a substrate.

The conductive substrate having the mesh-like wiring shown in FIG. 3 can also be formed by using two conductive substrates shown in FIGS. 1A or 2A. Explaining the case where two conductive substrates of FIG. 1A are used as an example, the metal layer 12 and the roughened plating layer 13 of each of the two conductive substrates shown in FIG. 1A are parallel to the X-axis direction. Etching is performed so that a plurality of linear patterns are arranged along the Y-axis direction at predetermined intervals. Then, the two conductive substrates are laminated so that the linear patterns formed on the conductive substrates by the etching process are oriented so as to intersect each other to obtain a conductive substrate having mesh-like wiring. be able to. The surface to be bonded when the two conductive substrates are bonded is not particularly limited. For example, the surface A in FIG. 1A in which the metal layer 12 and the like are laminated and the other surface 11b in FIG. 1A in which the metal layer 12 and the like are not laminated are bonded together so as to have the structure shown in FIG. 4B. You can also do it.

Further, for example, the other surfaces 11b in FIG. 1A in which the metal layer 12 and the like of the insulating base material 11 are not laminated may be bonded to each other so that the cross section has the structure shown in FIG. 4A.

In FIGS. 4A and 4B, a conductive substrate having an adhesion layer patterned between the wirings 31A and 31B and the insulating base material 11 in the same shape as the wirings 31A and 31B is shown in FIG. 1A. It can be manufactured by using the conductive substrate shown in FIG. 2A instead of the conductive substrate.

The width of the wiring and the distance between the wirings in the conductive substrate having the mesh-shaped wirings shown in FIGS. 3, 4A and 4B are not particularly limited, and are, for example, depending on the amount of current flowing through the wirings and the like. You can choose.

However, according to the conductive substrate of the present embodiment, the roughened plating layer is provided, and even when the roughened plating layer and the metal layer are etched and patterned, the occurrence of side etching is suppressed and the roughening is suppressed. The chemical plating layer and the metal layer can be patterned into a desired shape. Specifically, for example, a wiring having a wiring width of 10 μm or less can be formed. Therefore, the conductive substrate of the present embodiment preferably includes wiring having a wiring width of 10 μm or less. The lower limit of the wiring width is not particularly limited, but may be, for example, 3 μm or more.

In FIGS. 3, 4A and 4B, examples are shown in which linear wirings are combined to form a mesh-like wiring (wiring pattern), but the shape of the wiring pattern is not limited to this. Or, the wiring that constitutes the wiring pattern can have any shape.

Further, in FIGS. 4A and 4B, an example of a conductive substrate having a wiring pattern in which the roughened plating layer is left is shown, but the roughened plating layer is a layer provided to enhance the adhesion to the resist. Therefore, it can be removed after the wiring pattern is formed. When removing, the roughened plating layer can be removed by, for example, a general sulfuric acid / hydrogen peroxide solution-based microetching solution.

The conductive substrate of the present embodiment described above has a structure in which a roughened plating layer is laminated on a metal layer formed on at least one surface of an insulating base material. Therefore, the adhesion to the resist is high, and the occurrence of side etching can be suppressed.
(Manufacturing method of conductive substrate)
Next, a configuration example of the method for manufacturing the conductive substrate of the present embodiment will be described.

The method for manufacturing a conductive substrate of the present embodiment can have the following steps.
A metal layer forming step of forming a metal layer on at least one surface of an insulating base material.
A roughened plating layer forming step of forming a roughened plating layer on a metal layer.

Then, in the roughened plating layer forming step, a roughened plating layer can be formed by an electrolytic method using a plating solution containing nickel ions and copper ions.

The method for manufacturing the conductive substrate of the present embodiment will be specifically described below.

The conductive substrate described above can be suitably manufactured by the method for manufacturing a conductive substrate of the present embodiment. Therefore, except for the points described below, the configuration can be the same as that of the above-mentioned conductive substrate, and some description thereof will be omitted.

The insulating base material to be used in the metal layer forming step can be prepared in advance. The insulating base material can be cut to an arbitrary size in advance if necessary.

Then, as described above, the metal layer preferably has a metal thin film layer. Further, the metal layer may have a metal thin film layer and a metal plating layer. Therefore, the metal layer forming step can include, for example, a step of forming a metal thin film layer by a dry plating method. The metal layer forming step includes a step of forming a metal thin film layer by a dry plating method, and a step of forming a metal plating layer by an electroplating method, which is a kind of wet plating method, using the metal thin film layer as a feeding layer. May have.

The dry plating method used in the step of forming the metal thin film layer is not particularly limited, and for example, a vapor deposition method, a sputtering method, an ion plating method, or the like can be used. As the vapor deposition method, a vacuum vapor deposition method can be preferably used. As the dry plating method used in the step of forming the metal thin film layer, it is more preferable to use the sputtering method because the film thickness can be easily controlled.

Next, the process of forming the metal plating layer will be described. The conditions in the step of forming the metal plating layer by the wet plating method, that is, the conditions of the electroplating treatment are not particularly limited, and various conditions according to the conventional method may be adopted. For example, a metal plating layer can be formed by supplying a base material having a metal thin film layer formed to a plating tank containing a metal plating solution and controlling the current density and the transport speed of the base material.

Next, the roughened plating layer forming step will be described.

In the rough plating layer forming step, for example, a rough plating layer containing a simple substance of nickel, a nickel oxide, a nickel hydroxide, and copper can be formed.

The roughened plating layer can be formed by a wet method. Specifically, for example, a roughened plating layer can be formed on the metal layer by an electrolytic method, for example, an electrolytic plating method, in a plating tank containing the above-mentioned plating solution, using a metal layer as a feeding layer. By forming the roughened plating layer by the electrolytic plating method using the metal layer as the feeding layer in this way, the roughened plating layer is formed on the entire surface of the metal layer opposite to the surface facing the insulating base material. can.

By adjusting the pH of the plating solution and the current density when forming the roughened plating layer, the shape and size of the crystals contained in the roughened plating layer can be selected. For example, by increasing the pH of the plating solution or increasing the current density during film formation, acicular crystals are likely to occur, and by lowering the pH of the plating solution or lowering the current density during film formation, granules are likely to occur. Crystals are likely to form.

Therefore, for example, a preliminary test can be performed, and the conditions can be selected so that the roughened plating layer contains crystals having a desired shape and size.

Since the plating solution has already been described, the description thereof will be omitted.

In the method for manufacturing a conductive substrate of the present embodiment, any step can be further carried out in addition to the above-mentioned steps.

For example, when the adhesive layer is formed between the insulating base material and the metal layer, the adhesive layer forming step of forming the adhesive layer on the surface forming the metal layer of the insulating base material can be carried out. When the adhesion layer forming step is carried out, the metal layer forming step can be carried out after the adhesion layer forming step, and in the metal layer forming step, the base material having the adhesion layer formed on the insulating base material in this step is used. A metal thin film layer can be formed.

In the adhesion layer forming step, the film forming method of the adhesion layer is not particularly limited, but it is preferable to form a film by a dry plating method. As the dry plating method, for example, a sputtering method, an ion plating method, a vapor deposition method, or the like can be preferably used. When the adhesion layer is formed by the dry method, it is more preferable to use the sputtering method because the film thickness can be easily controlled. As described above, one or more elements selected from carbon, oxygen, hydrogen, and nitrogen can be added to the adhesion layer, and in this case, the reactive sputtering method can be more preferably used.

The conductive substrate obtained by the method for manufacturing a conductive substrate of the present embodiment can be used for various purposes such as a conductive substrate on which various electronic components are mounted. When used for various purposes, it is preferable that the metal layer and the roughened plating layer contained in the conductive substrate of the present embodiment are patterned. When the adhesion layer is provided, it is preferable that the adhesion layer is also patterned. The metal layer and the roughened plating layer, and in some cases the adhesion layer, can be patterned according to, for example, a desired wiring pattern, and the metal layer, the roughened plating layer, and in some cases the adhesion layer have the same shape. It is preferable that it is patterned into.

Therefore, the method for manufacturing a conductive substrate of the present embodiment can include a patterning step of patterning a metal layer and a roughened plating layer. When the adhesion layer is formed, the patterning step can be a step of patterning the adhesion layer, the metal layer, and the roughened plating layer.

The specific procedure of the patterning step is not particularly limited, and can be carried out by any procedure. For example, in the case of the conductive substrate 10A in which the metal layer 12 and the roughened plating layer 13 are laminated on the insulating base material 11 as shown in FIG. 1A, first, a resist having a desired pattern on the surface A on the roughened plating layer 13 A resist placement step can be performed to place the. Next, an etching step of supplying the etching solution to the surface A on the roughened plating layer 13, that is, the surface side on which the resist is arranged can be performed.

The etching solution used in the etching step is not particularly limited, and can be arbitrarily selected depending on the composition of the metal layer, the roughened plating layer, and the like. For example, when the metal layer and the roughened plating layer show substantially the same reactivity with the etching solution, an etching solution generally used for etching the metal layer can be preferably used.

As the etching solution, for example, a mixed aqueous solution containing one or more selected from sulfuric acid, hydrogen peroxide (hydrogen peroxide solution), hydrochloric acid, cupric chloride, and ferric chloride can be preferably used. The content of each component in the etching solution is not particularly limited.

The etching solution can be used at room temperature, but it can also be used by heating it in order to enhance the reactivity. For example, it can be used by heating it to 40 ° C. or higher and 50 ° C. or lower.

Further, as shown in FIG. 1B, a patterning step of patterning the conductive substrate 10B in which the metal layers 12A and 12B and the roughened plating layers 13A and 13B are laminated on one surface 11a and the other surface 11b of the insulating base material 11. Can be carried out. In this case, for example, a resist placement step of placing a resist having a desired pattern on the surface A and the surface B on the roughened plating layers 13A and 13B can be performed. Next, an etching step of supplying an etching solution to the surface A and the surface B on the roughened plating layers 13A and 13B, that is, the surface side on which the resist is arranged can be performed.

The pattern formed in the etching step is not particularly limited, and any shape can be used. For example, in the case of the conductive substrate 10A shown in FIG. 1A, a pattern is formed so that the metal layer 12 and the roughened plating layer 13 include a plurality of straight lines and jaggedly bent lines (zigzag straight lines) as described above. You can also do it.

Further, in the case of the conductive substrate 10B shown in FIG. 1B, the metal layer 12A and the metal layer 12B can form a pattern so as to form a mesh-like wiring. In this case, it is preferable that the roughened plating layer 13A is patterned so as to have the same shape as the metal layer 12A, and the roughened plating layer 13B is preferably patterned so as to have the same shape as the metal layer 12B.

Further, for example, it is also possible to carry out a laminating step of laminating two or more patterned conductive substrates after patterning the metal layer 12 and the like on the above-mentioned conductive substrate 10A in the patterning step. When laminating, for example, by laminating so that the patterns of the metal layers of each conductive substrate intersect, it is possible to obtain a laminated conductive substrate having mesh-shaped wiring.

The method of fixing the two or more laminated conductive substrates is not particularly limited, but can be fixed by, for example, an adhesive or the like.

The conductive substrate obtained by the above-mentioned method for manufacturing a conductive substrate of the present embodiment has a structure in which a roughened plating layer is laminated on a metal layer formed on at least one surface of an insulating base material. ing. The roughened plating layer is a roughened plating layer whose surface opposite to the surface facing the insulating base material is a roughened surface. Therefore, the adhesion to the resist is high, and the occurrence of side etching can be suppressed.

Specific examples and comparative examples will be described below, but the present invention is not limited to these examples.
(Evaluation method)
The samples prepared in the following Examples and Comparative Examples were evaluated by the following methods.
(1) Component analysis of the roughened plating layer The component analysis of the roughened plating layer was performed by an X-ray photoelectron spectrometer (manufactured by PHI, model: QuantaSXM). A monochromatic Al (1486.6 eV) was used as the X-ray source.

As will be described later, in each of the following Examples and Comparative Examples, a conductive substrate having the structure of FIG. 1A was produced. Therefore, the surface A exposed to the outside of the roughened plating layer 13 in FIG. 1A was subjected to Ar ion etching, and the Ni 2P spectrum and the Cu LMM spectrum 10 nm inside from the outermost surface were measured.

As a result, it was confirmed that all of Examples 1 to 10 and Comparative Examples 1 to 4 contained a simple substance of nickel, a nickel oxide, a nickel hydroxide, and copper.
(2) Shape and size of crystals contained in the roughened plating layer A surface opposite to the surface facing the insulating base material, which is the roughened surface of the roughened plating layer, specifically, the surface A of FIG. 1A. Was observed with a scanning electron microscope, and the shape and size of the crystals contained in the roughened plating layer were evaluated.

In the evaluation, first, the region was enlarged 50,000 times at an arbitrary position on the roughened surface of the roughened plating layer. Then, the shape of the crystal existing in the observation region was observed. When granular crystals are observed, they are shown as granular, and when needle-shaped crystals are observed, they are shown as needle-shaped in the column of crystal shape in Table 1.

When granular crystals were observed, 20 granular crystals to be evaluated were selected, and the average crystal grain size and standard deviation σ were measured and calculated. The crystal grain size of the granular crystal means the diameter of a circle having the smallest size that completely includes the granular crystal for which the granular crystal is measured. When acicular crystals were observed, 20 acicular crystals to be evaluated were selected, and the average length, average width, average aspect ratio, and standard deviation σ were measured and calculated.

When the granular crystal is evaluated, the average value and standard deviation of the crystal grain size are described in the column of "crystal grain size / length" in Table 1.

When acicular crystals are evaluated, the average value and standard deviation of their lengths are listed in the "Crystal grain size / length" column in Table 1, and the average value and standard deviation of width and aspect ratio are They are listed in the "Width" and "Aspect ratio" columns in Table 1, respectively.

Since each parameter has already been described, description thereof will be omitted here.
(3) Amount of Side Etching First, a dry film resist (Hitachi Kasei RY3310) was attached to the surface of the roughened plating layer of the conductive substrate obtained in the following Examples and Comparative Examples by a laminating method. Then, ultraviolet exposure was performed through a photomask, and the resist was further dissolved and developed with a 1% aqueous sodium carbonate solution. As a result, a sample having a plurality of linear patterns of resists parallel to each other was prepared on the roughened plating layer.

Next, the sample was immersed in an etching solution at 30 ° C. consisting of 10% by weight of sulfuric acid and 3% by weight of hydrogen peroxide.

For the obtained sample, a cross section was observed parallel to the stacking direction of each layer of the conductive substrate and perpendicular to the linear pattern of the resist without peeling the resist. In this case, as shown in FIG. 5, the cross-sectional shape in which the patterned metal layer 52, the patterned roughened plating layer 53, and the resist 54 are laminated on the insulating base material 51 is observed. Then, the distance L between the widthwise end portion 54a of the resist and the widthwise end portion 52a of the patterned metal layer 52 was measured as the side etching amount.

The conductive substrate is taken out from the etching solution 60 seconds, 120 seconds, and 180 seconds after the start of immersion in the etching solution, and after cleaning, the side etching amount is evaluated as described above. rice field.
(Sample preparation conditions)
A conductive substrate was prepared under the conditions described below, and evaluated by the above-mentioned evaluation method.
[Example 1]
A conductive substrate having the structure shown in FIG. 1A was produced.
(Metal layer forming process)
A copper layer was formed as a metal layer on one surface of an insulating base material made of long polyethylene terephthalate resin (PET) having a length of 300 m, a width of 250 mm, and a thickness of 100 μm.

In the metal layer forming step, a metal thin film layer forming step and a metal plating layer forming step were carried out.

First, the metal thin film layer forming step will be described.

In the metal thin film layer forming step, the above-mentioned insulating base material was used as a base material, and a copper thin film layer was formed as a metal thin film layer on one surface of the insulating base material.

In the metal thin film layer forming step, first, the above-mentioned insulating base material which was previously heated to 60 ° C. to remove water was installed in the chamber of the sputtering apparatus.

Next, after exhausting the inside of the chamber to 1 × 10 ^-3 Pa, argon gas was introduced to set the pressure inside the chamber to 1.3 Pa.

Electric power was supplied to a copper target set in advance on the cathode of the sputtering apparatus, and a copper thin film layer was formed on one surface of the insulating base material so as to have a thickness of 0.7 μm.

Next, in the metal plating layer forming step, a copper plating layer was formed as the metal plating layer. The copper plating layer was formed by an electroplating method so that the thickness of the copper plating layer was 0.3 μm.

By carrying out the above metal thin film layer forming step and the metal plating layer forming step, a copper layer having a thickness of 1.0 μm was formed as a metal layer.

A substrate having a 1.0 μm-thick copper layer formed on an insulating base material produced in the metal layer forming step is immersed in 20 g / L sulfuric acid for 30 seconds, washed, and then the following roughened plating layer forming step is performed. carried out.
(Roughened plating layer forming process)
In the rough plating layer forming step, a rough plating layer was formed on one surface of the copper layer by an electrolytic plating method using a plating solution.

As the plating solution, a plating solution containing nickel ion, copper ion, amidosulfate, and sodium hydroxide was prepared. Nickel ions and copper ions were supplied to the plating solution by adding nickel sulfate hexahydrate and copper sulfate pentahydrate.

Then, each component was added and prepared so that the concentration of nickel ions in the plating solution was 6.5 g / L, the concentration of copper ions was 0.2 g / L, and the concentration of amidosulfate was 11 g / L.

Further, an aqueous sodium hydroxide solution was added to the plating solution to adjust the pH of the plating solution to 3.6.

In the rough plating layer forming step, electrolytic plating was performed under the conditions of a plating solution temperature of 40 ° C., a current density of 0.08 A / dm ² , and a plating time of 180 sec to form a roughened plating layer.

The film thickness of the formed roughened plating layer was 111 nm.

With respect to the conductive substrate obtained by the above steps, component analysis of the roughened plating layer described above, evaluation of the shape and size of crystals contained in the roughened plating layer, and evaluation of the amount of side etching were carried out. The results are shown in Tables 1 and 2.
[Examples 2 to 10]
In each example, the nickel ion concentration in the plating solution, the copper ion concentration, the pH, the current density at the time of forming the roughened plating layer, and the plating time when forming the roughened plating layer are shown in Table 1. A conductive substrate was prepared and evaluated in the same manner as in Example 1 except for the change to. The results are shown in Tables 1 and 2.
[Comparative Examples 1 to 4]
In each example, the nickel ion concentration in the plating solution, the copper ion concentration, the pH, the current density at the time of forming the roughened plating layer, and the plating time when forming the roughened plating layer are shown in Table 1. A conductive substrate was prepared and evaluated in the same manner as in Example 1 except for the change to. The results are shown in Table 1.

表１に示した結果によると、実施例１〜実施例１０では、粗化めっき層は、粒状、又は針状の結晶を含有していることが確認できた。そして、粒状結晶の場合は平均結晶粒サイズが５０ｎｍ以上１５０ｎｍ以下、針状結晶の場合は、平均長さが１００ｎｍ以上３００ｎｍ以下であり、平均幅が３０ｎｍ以上８０ｎｍ以下、平均アスペクト比が２．０以上４．５以下であることが確認できた。

According to the results shown in Table 1, in Examples 1 to 10, it was confirmed that the roughened plating layer contained granular or needle-shaped crystals. In the case of granular crystals, the average crystal grain size is 50 nm or more and 150 nm or less, and in the case of acicular crystals, the average length is 100 nm or more and 300 nm or less, the average width is 30 nm or more and 80 nm or less, and the average aspect ratio is 2.0. It was confirmed that it was 4.5 or less.

On the other hand, in Comparative Examples 1 to 4, it was confirmed that the roughened plating layer contained granular or acicular crystals, but the size did not satisfy the above range.

As a result, it was confirmed that the side etching amount was sufficiently suppressed in Examples 1 to 10, whereas the side etching amount was large in Comparative Examples 1 to 4.

Although the conductive substrate and the method for manufacturing the conductive substrate have been described above in the embodiments and examples, the present invention is not limited to the above-described embodiments and examples. Various modifications and changes are possible within the scope of the gist of the present invention described in the claims.

This application claims priority based on Japanese Patent Application No. 2017-081580 filed with the Japan Patent Office on April 17, 2017, and the entire contents of Japanese Patent Application No. 2017-081580 are included in this international application. Invite.

10A, 10B, 20A, 20B, 30 Conductive substrate 11, 51 Insulating base material 12, 12A, 12B, 52 Metal layer 13, 13A, 13B, 32A, 32B, 53 Roughened plating layer

Claims (5)

Insulating base material and
A metal layer formed on at least one surface of the insulating base material and
It has a roughened plating layer formed on the metal layer, and has
The roughened plating layer is a conductive substrate containing a simple substance of nickel, a nickel oxide, a nickel hydroxide, and copper, and containing granular crystals having an average crystal grain size of 50 nm or more and 150 nm or less. Insulating base material and
A metal layer formed on at least one surface of the insulating base material and
It has a roughened plating layer formed on the metal layer, and has
The roughened plating layer contains a simple substance of nickel, nickel oxide, nickel hydroxide, and copper, has an average length of 100 nm or more and 300 nm or less, an average width of 30 nm or more and 80 nm or less, and an average aspect ratio. A conductive substrate containing acicular crystals having a ratio of 2.0 or more and 4.5 or less. The conductive substrate according to claim 1 or 2, wherein the roughened plating layer has a thickness of 50 nm or more and 350 nm or less. The conductive substrate according to any one of claims 1 to 3, wherein the metal layer is a layer of copper or a copper alloy. A metal layer forming step of forming a metal layer on at least one surface of an insulating base material,
It has a roughened plating layer forming step of forming a roughened plating layer on the metal layer.
In the roughened plating layer forming step, the roughened plating layer is formed by an electrolytic method using a plating solution containing nickel ions and copper ions, and the roughened plating layer is formed of a single nickel and nickel oxidation. A method for producing a conductive substrate containing a product, nickel hydroxide, and copper.

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