TW201842625A - Conductive substrate and method for producing conductive substrate - Google Patents

Abstract

Provided is a conductive substrate which comprises an insulating base material, a metal layer that is formed on at least one surface of the insulating base material, and a roughening plating layer that is formed on the metal layer, and wherein the roughening plating layer contains granular crystals that have an average crystal grain size of from 50 nm to 150 nm (inclusive).

Description

   Conductive substrate and method for manufacturing conductive substrate   

The present invention relates to a conductive substrate and a method for manufacturing a conductive substrate.

In various electronic devices such as liquid crystal displays, mobile phones, and digital cameras, conductive substrates having various electronic components mounted thereon and having wiring patterns are used.

A conductive substrate having a wiring pattern is formed by forming a metal layer on an insulating substrate and patterning the metal layer in accordance with a desired wiring pattern. A conductive substrate having a wiring pattern is generally formed by disposing a resist having a shape corresponding to a wiring pattern to be formed on a metal layer and performing etching.

However, in the case where the wiring pattern is formed by etching, the etching is performed not only in the thickness direction of the metal layer but also in a plane direction which is a direction perpendicular to the thickness direction. The progress of the etching in the surface direction causes a so-called side etching in which the lower portion of the resist is also etched.

Therefore, when a resist pattern is formed on the metal layer, in consideration of the amount of side etching, correction for making the resist pattern thicker is also performed in advance. However, this correction hinders the miniaturization of the wiring of a conductive substrate having a wiring pattern.

In addition, for example, Patent Document 1 discloses a copper foil wiring forming method including forming an adhesive layer on a surface of a copper foil, forming a photosensitive resist on the adhesive layer, and resisting the photosensitive resist according to a desired pattern. A step of exposing the photoresist, developing the photosensitive resist, removing the adhesive layer exposed from the photosensitive resist, and etching the copper foil to form wiring.

    [Previous Technical Literature]         [Patent Literature]    

[Patent Document 1] Japanese Patent Laid-Open No. 2005-039097

However, even if the copper foil wiring forming method disclosed in Patent Document 1 is used, the occurrence of side corrosion cannot be sufficiently suppressed.

In view of the foregoing problems in the prior art, it is an object of the present invention to provide a conductive substrate capable of suppressing the occurrence of side etching.

In order to solve the above problems, in one aspect of the present invention, there is provided a conductive substrate including: an insulating substrate; a metal layer formed on at least one surface of the insulating substrate; and a roughened layer formed on the metal layer. An electroless plating layer, the roughened plating layer contains granular crystals having an average grain size of 50 nm or more and 150 nm or less.

According to one aspect of the present invention, it is possible to provide a conductive substrate capable of suppressing the occurrence of side etching.

10A, 10B, 20A, 20B, 30‧‧‧ conductive substrate

11, 51‧‧‧ insulating substrate

12, 12A, 12B, 52‧‧‧ metal layers

13, 13A, 13B, 32A, 32B, 53‧‧‧ rough coating

[FIG. 1A] A cross-sectional view of a conductive substrate according to an embodiment of the present invention.

[FIG. 1B] A cross-sectional view of a conductive substrate according to an embodiment of the present invention.

[FIG. 2A] A cross-sectional view of a conductive substrate according to an embodiment of the present invention.

[FIG. 2B] A cross-sectional view of a conductive substrate according to an embodiment of the present invention.

[FIG. 3] A plan view of a conductive substrate including a mesh wiring according to an embodiment of the present invention.

[Fig. 4A] An example of the configuration of a cross-sectional view taken along the line A-A 'in Fig. 3.

[Fig. 4B] Another configuration example of a sectional view taken along the line A-A 'in Fig. 3.

[Fig. 5] An explanatory diagram of the amount of side etching.

Hereinafter, one embodiment of the conductive substrate and the manufacturing method of the conductive substrate of this invention is demonstrated.

(Conductive substrate)

The conductive substrate of the present embodiment may include an insulating substrate, a metal layer formed on at least one surface of the insulating substrate, and a roughened plating layer formed on the metal layer.

In addition, the roughened plating layer may contain granular crystals having an average crystal grain size (size) of 50 nm or more and 150 nm or less.

In addition, in other forms, the roughened plating layer may include needle-like crystals having an average length of 100 nm to 300 nm, an average width of 30 nm to 80 nm, and an average aspect ratio of 2.0 to 4.5.

In addition, the conductive substrate of this embodiment means the board | substrate which has a metal layer and a roughening plating layer on the surface of an insulating base material before patterning a metal layer etc., and the metal layer etc. were performed. A patterned substrate, that is, a wiring substrate.

Here, each member included in the conductive substrate of the present embodiment will be described below.

The material for the insulating base material is not particularly limited, but for example, a polyamide resin, a polyethylene terephthalate resin, a polyethylene naphthalate resin, or a cycloolefin resin can be preferably used. One or more resins selected from polyimide resins, polycarbonate resins, and the like. In particular, as the material of the insulating substrate, polyamine, PET (polyethylene terephthalate), PEN (polyethylene naphthalate), COP (cycloolefin polymer), and One or more resins selected from polyimide and polycarbonate.

The thickness of the insulating base material is not particularly limited, and can be arbitrarily selected according to the strength required when used as a conductive substrate, specifications based on the use of the conductive substrate, capacitance, and the like. The thickness of the insulating base material is, for example, preferably 10 μm or more and 200 μm or less, preferably 12 μm or more and 120 μm or less, and more preferably 12 μm or more and 100 μm or less.

Next, the metal layer will be described.

The material constituting the metal layer is not particularly limited, and a material having an electrical conductivity suitable for the application may be selected. However, from the viewpoint of superior electrical characteristics and easier etching, copper is preferably used as the material constituting the metal layer. That is, the metal layer preferably contains copper.

When the metal layer contains copper, the material constituting the metal layer is preferably, for example, Cu and at least one selected from the group consisting of Ni, Mo, Ta, Ti, V, Cr, Fe, Mn, Co, and W. A copper alloy of a metal, or a material including copper and one or more metals selected from the above-mentioned metal group. The metal layer may be a copper layer made of copper.

That is, when the metal layer contains copper, the metal layer may be one or more layers selected from copper, a copper-containing metal, and a copper alloy. When the metal layer contains copper, the metal layer is preferably a layer of copper or a copper alloy. The reason is that the copper or copper alloy layer has a particularly high electrical conductivity (conductivity), and wiring can be easily formed by etching. The copper or copper alloy layer is particularly susceptible to side etch, which will be described later. However, the conductive substrate of this embodiment can suppress side etch.

The method for forming the metal layer is not particularly limited, but it is preferably formed, for example, by not placing an adhesive between another member and the metal layer. That is, the metal layer is preferably arranged directly on the upper surface of another member. In addition, a metal layer can be formed and arrange | positioned on the upper surface of the adhesion layer and / or an insulating base material mentioned later, for example. For this reason, the metal layer is preferably directly formed and disposed on the upper surface of the adhesion layer or the insulating base material.

In order to form a metal layer directly on the upper surface of another member, the metal layer preferably has a metal thin film layer formed by a dry plating method. The dry plating method is not particularly limited, but for example, a vapor deposition method, a sputtering method, an ion plating method, or the like can be used. In particular, from the viewpoint of easier film thickness control, a sputtering method is preferably used.

In addition, when the metal layer is made thicker, the metal plating layer may be laminated using a wet plating method after the metal thin film layer is formed by a dry plating method. Specifically, for example, a metal thin film layer may be formed on an insulating substrate or an adhesive layer by a dry plating method, and the metal thin film layer may be used as a power supply layer, and may be formed by an electrolytic plating method which is a type of wet plating Metal plating.

In addition, in the case where the metal layer is formed into a film using only the dry plating method as described above, the metal layer may be composed of a metal thin film layer. When the metal layer is formed by a combination of a dry plating method and a wet plating method, the metal layer may be composed of a metal thin film layer and a metal plating layer.

By forming the metal layer using only the dry plating method or a combination of the dry plating method and the wet plating method as described above, the metal can be directly formed and arranged on the insulating base material or the adhesive layer without using an adhesive. Floor.

The thickness of the metal layer is not particularly limited, and when the metal layer is used as a wiring, it can be arbitrarily selected according to the magnitude of the current supplied to the wiring, the wiring width, and the like.

However, if the metal layer is too thick, it takes a long time to perform the etching for forming a wiring pattern, so that problems such as easy occurrence of side etching and difficulty in forming thin lines may occur. For this reason, the thickness of the metal layer is preferably 5 μm or less, and more preferably 3 μm or less.

In addition, in particular, from the viewpoint of reducing the resistance value of the conductive substrate so that sufficient current can be supplied, for example, the thickness of the metal layer is preferably 50 nm or more, preferably 60 nm or more, and more preferably 150 nm or more.

When the metal layer has the metal thin film layer and the metal plating layer as described above, the total of the thickness of the metal thin film layer and the thickness of the metal plating layer is preferably in the above range.

The thickness of the metal thin film layer is not particularly limited in the case where the metal layer is composed of a metal thin film layer, or in the case where it is composed of a metal thin film layer and a metal plating layer, but it is preferably 50 nm or more and 700 nm or less.

Next, the roughened plating layer will be described.

The inventors of the present invention have conducted intensive studies on the reason why side etching cannot be sufficiently suppressed when a resist is disposed on a metal layer and etching is performed. As a result, it became clear that the insufficient adhesion between the metal layer and the resist caused the etchant to penetrate between the metal layer and the resist and spread, which was the reason why the side etching could not be sufficiently suppressed.

Therefore, the inventors of the present invention have conducted further research and found that when a roughened plating layer is provided on the metal layer, and thus a resist is disposed on the surface of the conductive substrate, specifically, the surface of the roughened plating layer, It can improve the adhesion between the roughened coating and the resist. Based on this, it was found that the use of a conductive substrate having the roughened plating layer can suppress side corrosion, and completed the present invention.

The surface of the roughened plating layer of the conductive substrate of the present embodiment, specifically, the surface of the roughened plating layer opposite to the surface facing the insulating substrate, that is, when patterned as described later The surface on which the resist is disposed is preferably a roughened surface.

From the viewpoint of suppressing the occurrence of side corrosion in particular, the roughened plating layer preferably contains one or more crystals selected from granular crystals and needle crystals.

When the roughened plating layer contains granular crystals, the roughened plating layer preferably contains granular crystals having an average crystal grain size of 50 nm or more and 150 nm or less.

The reason for this is that the coarsened plating layer contains granular crystals and the average grain size is 50 nm or more and 150 nm or less, so that the roughened plating layer and the resist can be improved when the surface of the roughened plating layer is a roughened surface. It can prevent the occurrence of side erosion.

When the roughened plating layer contains granular crystals, the average grain size is preferably 70 nm or more and 150 nm or less.

When the roughened plating layer contains granular crystals, the standard deviation σ of the grain size of the granular crystals is preferably 10 nm or more, and more preferably 15 nm or more. The reason is that by setting the standard deviation σ to be 10 nm or more, the granular crystals contained in the roughened plating layer have a certain degree of non-uniformity, and in particular, can improve the roughness between the roughened plating layer and the resist. Adhesiveness. The upper limit value of the standard deviation σ of the grain size of the granular crystal is not particularly limited, but may be, for example, 100 nm or less.

It should be noted that the grain size of the granular crystal refers to a particle that is completely subsumption measured when the roughened surface of the roughened coating is observed with a scanning electron microscope or the like as described later. The diameter of a circle with the smallest size of a crystal.

In addition, when the roughened plating layer contains needle-like crystals, the roughened plating layer preferably contains needle-like shapes having an average length of 100 nm to 300 nm, an average width of 30 nm to 80 nm, and an average aspect ratio of 2.0 to 4.5. crystallization.

The reason is that the roughened plating layer contains needle-like crystals, the average length is 100 nm or more and 300 nm or less, the average width is 30 nm or more and 80 nm or less, and the aspect ratio is 2.0 or more and 4.5 or less. The adhesion between the roughened plating layer and the resist when the surface of the roughened plating layer is used as the roughened surface can suppress the occurrence of side corrosion in particular.

When the roughened plating layer contains needle-like crystals, the average length is preferably 120 nm or more and 260 nm or less, the average width is 40 nm or more and 70 nm or less, and the average aspect ratio is 2.5 or more and 4.5 or less.

When the roughened plating layer contains needle-like crystals, the standard deviations σ of the length, width, and aspect ratio of the needle-like crystals are preferably 40 nm or more, 5 nm or more, and 0.5 or more, respectively. The reason is that by setting the standard deviation σ of the length, width, and aspect ratio of the acicular crystals within the above range, it means that the acicular crystals contained in the roughened plating layer have a certain degree of non-uniformity, In particular, the adhesion between the roughened plating layer and the resist can be improved. The upper limits of the length, width, and standard deviation σ of the acicular crystal are not particularly limited, but may be, for example, 75 nm or less, 50 nm or less, and 5 or less.

It should be noted that the length and width of the acicular crystals refer to the length and length of the long sides of each acicular crystal when the roughened surface of the roughened coating is observed using a scanning electron microscope or the like as described later. The length of the short side. The aspect ratio is a value obtained by dividing the length by the width.

The average grain size, average length, average width, average aspect ratio, and standard deviation σ of the crystals included in the roughened plating layer can be observed, for example, by using a scanning electron microscope (SEM: Scanning Electron Microscope). The roughened surface is measured and calculated from the observation image.

The specific conditions for observing the roughened surface of the roughened plating layer are not particularly limited, but for example, it is preferable to enlarge it by 50,000 times at an arbitrary position. In addition, when the roughened plating layer contains granular crystals, the grain size of 20 granular crystals arbitrarily selected in one visual field can be measured, and the average value of the grain sizes of the 20 granular crystals can be measured. As the average grain size. In addition, the standard deviation of the grain size can also be calculated based on the measured grain size of the 20 granular crystals and the calculated average grain size.

In the case where the roughened plating layer contains needle-like crystals, the length and width of 20 needle-like crystals arbitrarily selected in one visual field can also be measured, and the aspect ratio can be calculated. In addition, the average value of the length, width, and aspect ratio of the 20 needle crystals can be used as the average length, average width, and average aspect ratio. In addition, the respective standard deviations can be calculated from the measured values of the length and width of the 20 needle-shaped crystals, the calculated values of the aspect ratio, and the calculated average length, average width, and average aspect ratio.

It should be noted that, for granular crystals or acicular crystals, it is preferable to select the position of the observation field such that 20 or more are included in one field of view. In the case of a field of view, the average grain size or average length, average width, and average aspect ratio can also be calculated using granular crystals or acicular crystals with a number of less than 20 pieces.

As described above, regarding the roughened surface of the roughened coating, the size of crystals such as granular crystals can be calculated by a scanning electron microscope or the like. Therefore, it can be said that the above-mentioned granular crystals and / or acicular crystals are Crystals contained in the roughened surface of the plating layer are roughened.

The material of the rough-plated layer of the conductive substrate according to this embodiment is not particularly limited, but may include, for example, elemental nickel, nickel oxide, nickel hydroxide, and copper.

Here, the state of the copper contained in the roughened plating layer is particularly limited, but the copper may include, for example, one or more kinds selected from a simple copper and a copper compound. Examples of the copper compound include copper oxide and copper hydroxide.

For this reason, the roughened plating layer may contain, for example, elemental nickel, nickel oxide, and nickel hydroxide, and may further include one or more selected from the group consisting of metal copper, copper oxide, and copper hydroxide.

When the roughened plating layer contains at least one selected from elemental nickel, nickel oxide, nickel hydroxide, and copper, for example, from a compound of elemental copper and copper, the reactivity of the roughened plating layer to the etching solution and the metal can be made. The layers are the same. For this reason, when the metal layer and the roughened plating layer are etched at the same time, the two layers can be changed into a target shape, and uniform etching can be performed in a plane. In particular, dimensional unevenness and / or side etching can be suppressed. occur.

The method for forming the roughened plating layer is not particularly limited, and for example, it can be formed by a wet method.

As the wet method, an electrolytic plating method is particularly preferably used.

There are no particular restrictions on the composition of the plating solution used in forming the rough-plated layer by the electrolytic plating method. For example, a plating solution containing nickel ions and copper ions can be preferably used.

For example, the nickel ion concentration in the plating solution is preferably 2.0 g / L or more, and more preferably 3.0 g / L or more.

The upper limit value of the nickel ion concentration in the plating solution is not particularly limited, but it is preferably, for example, 20.0 g / L or less, and more preferably 15.0 g / L or less.

The copper ion concentration in the plating solution is preferably 0.005 g / L or more, and more preferably 0.008 g / L or more.

The upper limit value of the copper ion concentration in the plating solution is not particularly limited, but is preferably 4.0 g / L or less, and more preferably 1.02 g / L or less.

When the plating solution is prepared, the method for supplying nickel ions and copper ions is not particularly limited, and for example, the supply can be performed in a salt state. For example, sulfamates and / or sulfates may be preferably used. It should be noted that, in terms of the type of salt, each metal element may be the same type of salt, or different types of salts may be used simultaneously. Specifically, for example, the same kind of salt as nickel sulfate and copper sulfate may be used to prepare the plating solution. In addition, for example, different types of salts such as nickel sulfate and copper sulfamate can be used simultaneously to prepare a plating solution.

In addition, as the pH adjuster, an alkali metal hydroxide can be preferably used.

As the alkali metal hydroxide as a pH adjuster, for example, one or more selected from sodium hydroxide, potassium hydroxide, and lithium hydroxide can be used. In particular, the alkali metal hydroxide as a pH adjuster is preferably one or more selected from sodium hydroxide and potassium hydroxide. The reason is that sodium hydroxide and potassium hydroxide are easily available and the cost is low.

The pH of the plating solution of this embodiment is not particularly limited, but it is preferably, for example, 3.0 or more and 5.2 or less, and more preferably 3.5 or more and 5.0 or less.

The plating solution may further contain a complexing agent. As the complexing agent, for example, amidosulfuric acid can be preferably used.

The content of the complexing agent in the plating solution is not particularly limited, and can be arbitrarily selected.

For example, when using ammonium sulfuric acid as a complexing agent, the concentration of ammonium sulfuric acid in the plating solution is not particularly limited, but it is preferably 1 g / L or more and 50 g / L or less, and more preferably 5 g / L or more And 20g / L or less.

It should be noted that the shape and / or size of crystals contained in the roughened plating layer can be selected by adjusting the pH and / or current density of the plating solution during the formation of the roughened plating layer. For example, when the pH of the plating solution is high or the current density during film formation is high, needle-like crystals can be easily formed. In addition, the pH of the plating solution is low or the current density during film formation is low. Lower, easy to form granular crystals.

To this end, for example, preliminary tests may be performed to select conditions to obtain a roughened plating layer of crystals having a desired shape and size.

The thickness of the roughened plating layer is not particularly limited, and its thickness can be selected so as to sufficiently improve the adhesion with the resist layer.

The thickness of the roughened plating layer is preferably 50 nm or more, and more preferably 70 nm or more. The reason for this is that by making the thickness of the roughened plating layer 50 nm or more, unevenness can be sufficiently formed on the surface, whereby the adhesion with the resist layer can be improved.

In addition, the upper limit value of the thickness of the roughened plating layer is not particularly limited, but if it is too thick, the time required for the etching at the time of forming the wiring becomes long, which causes an increase in cost. For this reason, the thickness of the roughened plating layer is preferably 350 nm or less, preferably 150 nm or less, and more preferably 145 nm or less.

In addition, the conductive substrate may be provided with any layer other than the above-mentioned insulating base material, metal layer, and roughened plating layer. For example, an adhesion layer may be provided.

A configuration example of the adhesion layer will be described.

As described above, the metal layer may be formed on the insulating base material. However, when the metal layer is directly formed on the insulating base material, the adhesion between the insulating base material and the metal layer may be insufficient. For this reason, when the metal layer is directly formed on the upper surface of the insulating substrate, during the manufacturing process, or during use, the metal layer may be peeled from the insulating substrate.

Therefore, in the conductive substrate of this embodiment, in order to improve the adhesion between the insulating substrate and the metal layer, an adhesive layer may be disposed on the insulating substrate. That is, it may be a conductive substrate having an adhesive layer between the insulating base material and the metal layer.

By disposing an adhesive layer between the insulating substrate and the metal layer, the adhesiveness between the insulating substrate and the metal layer can be improved, and peeling of the metal layer from the insulating substrate can be more reliably suppressed.

The material constituting the adhesion layer is not particularly limited, and may be based on the adhesion force between the insulating substrate and the metal layer, the degree of suppression of light reflection on the surface of the metal layer, and the use environment of the conductive substrate (for example, The degree of stability such as humidity and / or temperature can be arbitrarily selected.

The adhesion layer preferably contains, for example, at least one metal selected from Ni, Zn, Mo, Ta, Ti, V, Cr, Fe, Co, W, Cu, Sn, and Mn. In addition, the adhesion layer may further contain one or more elements selected from carbon, oxygen, hydrogen, and nitrogen.

It should be noted that the adhesion layer may also contain a metal alloy including at least two selected from Ni, Zn, Mo, Ta, Ti, V, Cr, Fe, Co, W, Cu, Sn, and Mn. More than one metal. In this case, the adhesion layer may further contain one or more elements selected from carbon, oxygen, hydrogen, and nitrogen. At this time, as a metal alloy containing at least two metals selected from Ni, Zn, Mo, Ta, Ti, V, Cr, Fe, Co, W, Cu, Sn, and Mn, Cu- Ti-Fe alloy, Cu-Ni-Fe alloy, Ni-Cu alloy, Ni-Zn alloy, Ni-Ti alloy, Ni-W alloy, Ni-Cr alloy, and / or Ni-Cu-Cr alloy.

The method for forming the adhesive layer is not particularly limited, but it is preferable to form the film by a dry plating method. As the dry plating method, for example, a sputtering method, an ion plating method, a vapor deposition method, or the like can be preferably used. When a dry method is used to form the adhesive layer, it is preferable to use a sputtering method from the viewpoint of easier film thickness control. In addition, as described above, one or more elements selected from carbon, oxygen, hydrogen, and nitrogen may be added to the adhesion layer. In this case, a reactive sputtering method can be more preferably used.

When the adhesion layer contains one or more elements selected from carbon, oxygen, hydrogen, and nitrogen, the carbon, oxygen, hydrogen, and nitrogen are added to the environment in advance when the film is formed in the adhesion layer. The selected gas of one or more elements can be added to the adhesion layer. For example, when carbon is added to the adhesion layer, one or more kinds selected from carbon monoxide gas and carbon dioxide gas can be added in advance to the environment when performing dry plating, and when oxygen is added, it can be used during dry plating. Oxygen is added to the environment in advance, and when hydrogen is added, one or more selected from hydrogen and water may be added to the environment in the case of dry plating, and in the case of nitrogen, it may be added to the environment in the case of dry plating in advance. Add nitrogen.

For a gas containing one or more elements selected from carbon, oxygen, hydrogen, and nitrogen, it is preferable to add an inert gas as an ambient gas during dry plating. The inert gas is not particularly limited, but for example, argon can be preferably used.

By forming the adhesive layer using the dry plating method as described above, the adhesion between the insulating base material and the adhesive layer can be improved. In addition, since the adhesion layer may contain, for example, a metal as a main component, adhesion to the metal layer is also high. For this reason, by providing an adhesive layer between the insulating base material and the metal layer, peeling of the metal layer can be suppressed.

The thickness of the adhesion layer is not particularly limited, but it is preferably, for example, 3 nm or more and 50 nm or less, preferably 3 nm or more and 35 nm or less, and more preferably 3 nm or more and 33 nm or less.

Next, a configuration example of the conductive substrate will be described.

As described above, the conductive substrate of the present embodiment may include an insulating substrate, a metal layer, and a roughened plating layer. In addition, layers such as an adhesion layer may be arbitrarily provided.

A specific configuration example will be described below using FIGS. 1A and 1B. FIGS. 1A and 1B show examples of cross-sectional views of a surface of a conductive substrate according to the present embodiment parallel to the lamination direction of the insulating base material, the metal layer, and the roughened plating layer.

The conductive substrate according to this embodiment may have a structure in which a metal layer and a roughened plating layer are sequentially laminated on at least one surface of the insulating substrate from the insulating substrate side, for example.

Specifically, for example, as shown in FIG. 1A, in the conductive substrate 10A, the metal layer 12 and the roughened plating layer 13 may be laminated one by one on the one surface 11 a side of the insulating base material 11 in this order. As for the roughened plating layer 13, the surface A of the roughened plating layer 13 opposite to the surface opposing the insulating base material 11, that is, the surface A can be made into a roughened surface. In addition, as shown in FIG. 1B, the conductive substrate 10B may have the metal layers 12A, 12B, and the roughened plating layers 13A, 12A, 12B, and 13B performs lamination of each layer. In this case, as for the roughened plating layers 13A and 13B, the surfaces opposite to the surface facing the insulating base material 11, that is, the surface A and the surface B may be roughened surfaces.

In addition, a structure such as an adhesion layer may be further provided as an arbitrary layer. In this case, for example, it is possible to have a structure in which an adhesion layer, a metal layer, and a roughened plating layer are sequentially formed on at least one surface of the insulating substrate from the insulating substrate side.

Specifically, for example, as shown in FIG. 2A, in the conductive substrate 20A, the adhesive layer 14, the metal layer 12, and the roughened plating layer 13 may be laminated in this order on one surface 11 a side of the insulating substrate 11.

In this case, a structure in which an adhesive layer, a metal layer, and a roughened plating layer are laminated on both surfaces of the insulating base material 11 may be used. Specifically, as shown in FIG. 2B, the conductive substrate 20B can sequentially face the adhesion layers 14A, 14B, the metal layers 12A, 12B on one surface 11 a side and the other surface 11 b side of the insulating substrate 11, respectively, and The rough plating layers 13A and 13B are laminated.

In addition, FIG. 1B and FIG. 2B show a case where a metal layer, a roughened plating layer, or the like is laminated on both surfaces of the insulating base material, and the insulating base material 11 is used as a symmetrical surface to insulate the substrate. The example in which the layers stacked on top and bottom of the base material 11 are symmetrically arranged is not limited to this configuration. For example, the structure of the one surface 11a side of the insulating base material 11 in FIG. 2B may be the same as the structure in FIG. 1B in which the metal layer 12A and the rough plating layer 13A are laminated in this order without providing the adhesion layer 14A As a result, the layers stacked above and below the insulating base material 11 can have an asymmetric structure.

The conductive substrate according to this embodiment can be preferably used as a conductive substrate used for mounting various electronic components. The wiring shape of the conductive substrate is not particularly limited, and may have any shape and pattern. Here, a conductive substrate provided with a mesh wiring will be described as an example.

The conductive substrate provided with the mesh wiring can be obtained by etching the metal layer and the roughened plating layer of the conductive substrate according to the present embodiment described above, and optionally including an adhesion layer.

For example, two layers of wiring can be used as (obtained) the mesh wiring. A specific configuration example is shown in FIG. 3. FIG. 3 is a diagram showing a conductive substrate 30 having mesh wiring viewed from the upper surface side in the lamination direction of a metal layer or the like. In order to easily understand the wiring pattern, an insulating substrate and a metal layer are patterned. The description (illustration) of the layers other than the formed wirings 31A and 31B is omitted. Moreover, the wiring 31B which can be seen through the insulating base material 11 is also shown.

The conductive substrate 30 shown in FIG. 3 includes an insulating substrate 11, a plurality of wirings 31A parallel to the Y-axis direction in the figure, and wirings 31B parallel to the X-axis direction. It should be noted that the wirings 31A and 31B are formed by etching a metal layer, and rough surfaces (not shown) are formed on the upper or lower surfaces of the wirings 31A and 31B. The roughened plating is etched into the same shape as the wirings 31A and 31B.

The arrangement of the insulating base material 11 and the wirings 31A and 31B is not particularly limited. 4A and 4B show a configuration example of the arrangement of the insulating base material 11 and the wiring. 4A and 4B are cross-sectional views taken along line A-A 'in FIG. 3.

First, as shown in FIG. 4A, wirings 31A and 31B may be arranged on the upper and lower surfaces of the insulating base material 11, respectively. In addition, in FIG. 4A, the upper surface of the wiring 31A and the lower surface of the wiring 31B are also provided with the roughened plating layers 32A and 32B having the same shape as the wiring.

In addition, as shown in FIG. 4B, a group of insulating substrates 11 may be used to arrange wirings 31A and 31B on the upper and lower surfaces so as to sandwich one insulating substrate 11, and one wiring 31B may be arranged on Between the insulating base materials 11. In this case, the roughened plating layers 32A and 32B having the same shape as that of the wirings may be arranged on the upper surfaces of the wirings 31A and 31B. It should be noted that, as described above, an adhesion layer may be provided in addition to the metal layer and the roughened plating layer. For this reason, in any of the cases of FIGS. 4A and 4B, for example, an adhesive layer may be provided between any one or both of the wiring 31A and 31B and the insulating base material 11. When the adhesion layer is provided, the adhesion layer is also preferably etched to have the same shape as the wirings 31A and 31B.

The conductive substrate with mesh wiring shown in FIG. 3 and FIG. 4A may be provided with metal layers 12A, 12B and a roughened plating layer 13A, on both surfaces of the insulating base material 11 as shown in FIG. 1B, for example. 13B is formed of a conductive substrate.

In the case of using the conductive substrate of FIG. 1B as an example, the metal layer 12A and the roughened plating layer 13A on the one surface 11a side of the insulating base material 11 are etched so that they are the same as Y in FIG. 1B. A plurality of linear patterns parallel to the axial direction are arranged at predetermined intervals in the X-axis direction. It should be noted that the X-axis direction in FIG. 1B refers to a direction parallel to the width direction of each layer. In addition, the Y-axis direction in FIG. 1B refers to a direction perpendicular to the paper surface in FIG. 1B.

Next, the metal layer 12B and the roughened plating layer 13B on the other surface 11b side of the insulating base material 11 are etched so that a plurality of linear patterns parallel to the X-axis direction in FIG. 1B are spaced along the Y-axis direction. Arranged at predetermined intervals.

Through the above operations, a conductive substrate having mesh wiring as shown in FIGS. 3 and 4A can be formed. In addition, you may perform the etching of both surfaces of the insulating base material 11 simultaneously. That is, the metal layers 12A and 12B and the rough plating layers 13A and 13B may be etched simultaneously. In addition, for a conductive substrate having a shape patterned into the same adhesion layer as that of the wirings 31A and 31B between the wirings 31A and 31B and the insulating base material 11 in FIG. 4A, it can be achieved by using FIG. 2B. The conductive substrate shown below was fabricated by similarly etching.

The conductive substrate with mesh wiring shown in FIG. 3 can also be formed using two conductive substrates shown in FIG. 1A or 2A. Taking the case where two conductive substrates shown in FIG. 1A are used as an example for description, the metal layer 12 and the roughened plating layer 13 are etched for the two conductive substrates shown in FIG. 1A so as to be parallel to the X-axis direction. A plurality of linear patterns are arranged at predetermined intervals in the Y-axis direction. Then, by adjusting the directions so that the linear patterns formed on the respective conductive substrates by the above-mentioned etching process intersect with each other and bonding the two conductive substrates together, it is possible to produce conductivity having mesh wiring. Substrate. The bonding surface when two conductive substrates are bonded is not particularly limited. For example, the structure shown in FIG. 4B may be formed by bonding the surface A in FIG. 1A in which the metal layer 12 and the like are laminated and the other surface 11 b in FIG. 1A in which the metal layer 12 and the like are not laminated.

In addition, for example, by bonding the other surfaces 11 b in FIG. 1A without the laminated metal layer 12 and the like of the insulating base material 11 to each other, a structure having a cross section shown in FIG. 4A may be used.

It should be noted that, for a conductive substrate having a shape in which the wiring 31A, 31B and the insulating base material 11 in FIG. 4A and FIG. 4B are patterned into the same adhesion layer as the wiring 31A, 31B, It is manufactured by using the conductive substrate shown in FIG. 2A instead of the conductive substrate shown in FIG. 1A.

The width of the wiring and / or the distance between the wirings in the conductive substrate with mesh wiring shown in FIGS. 3, 4A, and 4B is not particularly limited. For example, it can be based on the amount of current flowing in the wiring. Make your selection.

However, according to the conductive substrate of this embodiment, even when the roughened plating layer and the roughened plating layer and the metal layer are etched and patterned, the occurrence of side corrosion can be suppressed, and the roughened plating layer can be formed. And the metal layer is patterned into a desired shape. Specifically, for example, a wiring having a wiring width of 10 μm or less can be formed. For this reason, it is preferable that the conductive substrate of this embodiment includes wiring having a wiring width of 10 μm or less. The lower limit value of the wiring width is not particularly limited, but may be, for example, 3 μm or more.

3, 4A, and 4B show examples of forming a net-like wiring (wiring pattern) by combining linear wirings, but the present invention is not limited to this configuration. The shape of the wiring pattern and / or the configuration of the wiring pattern are shown. The wiring can be any shape.

In addition, FIG. 4A and FIG. 4B show an example of a conductive substrate having a roughened plating layer remaining and having a wiring pattern. However, the roughened plating layer is a layer provided to improve adhesion to a resist, and is therefore formed. The wiring pattern can also be removed afterwards. In the case of removal, for example, the rough plating layer can be removed by a general micro-etching solution of sulfuric acid / hydrogen peroxide water.

According to the conductive substrate of this embodiment described above, the roughened layer is laminated on the metal layer formed on at least one surface of the insulating base material. For this reason, the adhesiveness with the resist is high, and the occurrence of side corrosion can be suppressed.

(Manufacturing method of conductive substrate)

Next, a configuration example of a method for manufacturing a conductive substrate according to this embodiment will be described.

The method for manufacturing a conductive substrate according to this embodiment may include the following steps.

A metal layer forming step of forming a metal layer on at least one surface of the insulating base material.

A rough plating layer forming step of forming a rough plating layer on a metal layer.

In the roughening plating layer forming step, a roughening plating layer can be formed by an electrolytic method using a plating solution containing nickel ions and copper ions.

Hereinafter, the manufacturing method of the conductive substrate of this embodiment is demonstrated concretely.

In addition, the above-mentioned conductive substrate can be preferably manufactured by the manufacturing method of the conductive substrate of this embodiment. For this reason, parts other than those described below may have the same structure as in the case of the above-mentioned conductive substrate, and a part of the description is omitted.

An insulating substrate to be used in the metal layer forming step may be prepared in advance. In addition, if necessary, a process such as cutting the insulating base material to an arbitrary size may be performed in advance.

The metal layer preferably has a metal thin film layer as described above. The metal layer may further include a metal thin film layer and a metal plating layer. For this purpose, the metal layer forming step may include, for example, a step of forming a metal thin film layer by a dry plating method. In addition, the metal layer forming step may include a step of forming a metal thin film layer by a dry plating method, and a step of forming a metal plating layer by using the metal thin film layer as a power supply layer and using a plating method which is a type of wet plating method.

The dry plating method used in the step of forming the metal thin film layer is not particularly limited, and for example, a vapor deposition method, a sputtering method, or an ion plating method can be used. In addition, as a vapor deposition method, a vacuum vapor deposition method can be used preferably. As the dry plating method used in the step of forming the metal thin film layer, a sputtering method is preferably used from the viewpoint that the film thickness control is relatively easy.

Next, a metal plating layer forming process is demonstrated. The conditions in the step of forming the metal plating layer by the wet plating method, that is, the conditions of the plating treatment are not particularly limited, and various conditions in the conventional method can be used. For example, the base material on which the metal thin film layer is formed is supplied into a plating tank having a metal plating solution, and the current density and / or the transfer speed of the base material is controlled, thereby forming a metal plating layer.

Next, a roughened plating layer forming step will be described.

In the rough plating layer forming step, for example, a rough plating layer containing elemental nickel, nickel oxide, nickel hydroxide, and copper can be formed.

The roughened plating layer can be formed by a wet method. Specifically, for example, by using a metal layer as a power supply layer, a roughened plating layer can be formed on a metal layer by an electrolytic method, for example, an electrolytic plating method, in a plating tank having the above-mentioned plating solution. By using the metal layer as a power supply layer and forming the roughened plating layer by the electrolytic plating method in this manner, the roughened plating layer can be formed on the entire surface of the metal layer on the side opposite to the surface facing the insulating base material.

When the roughened plating layer is formed into a film, the shape and / or size of the crystals contained in the roughened plating layer can be selected by adjusting the pH and / or current density of the plating solution. For example, when the pH of the plating solution is high or the current density during film formation is high, needle-like crystals can be easily formed. In addition, the pH of the plating solution is low or the current density during film formation is low. Lower, easy to form granular crystals.

For this purpose, for example, a preliminary test may be performed to select conditions so as to obtain a roughened plated layer of crystals having a desired shape and size.

Since the plating solution is as described above, its explanation is omitted.

In the manufacturing method of the conductive substrate of this embodiment, in addition to the above-mentioned steps, arbitrary steps can be performed.

For example, when an adhesion layer is formed between the insulating base material and the metal layer, an adhesion layer forming step of forming an adhesion layer on the metal layer-forming surface of the insulating base material may be performed. When the adhesion layer formation step is performed, the metal layer formation step may be performed after the adhesion layer formation step. In the metal layer formation step, the base of the adhesion layer may be formed on the insulating substrate in this step. A metal thin film layer is formed on the material.

In the adhesion layer forming step, the method for forming the adhesion layer is not particularly limited, but it is preferable to form the film by a dry plating method. As the dry plating method, for example, a sputtering method, an ion plating method, a vapor deposition method, or the like can be preferably used. When a dry method is used to form the adhesion layer, a sputtering method is preferably used from the viewpoint of easier film thickness control. In addition, as described above, one or more elements selected from carbon, oxygen, hydrogen, and nitrogen may be added to the adhesion layer. In this case, a reactive sputtering method may be more preferably used.

The conductive substrate obtained by the method for manufacturing a conductive substrate according to the present embodiment can be applied to various applications such as a conductive substrate used for mounting various electronic components. When applied to various applications, it is preferable to pattern the metal layer and the roughened plating layer included in the conductive substrate of the present embodiment. In addition, when an adhesion layer is provided, it is preferable to pattern also an adhesion layer. The metal layer, the roughened plating layer, and the adhesion layer may be patterned according to the situation, for example, and the metal layer, the roughened plating layer, and the adhesion layer may be patterned according to the situation. Are patterned into the same shape.

Therefore, the method for manufacturing a conductive substrate according to this embodiment may include a patterning step of patterning a metal layer and a roughened plating layer. It should be noted that, when the adhesion layer is formed, the patterning step may be a step of patterning the adhesion layer, the metal layer, and the roughened plating layer.

The process of the patterning step is not particularly limited, and can be carried out in accordance with an arbitrary process. For example, in the case of a conductive substrate 10A in which a metal layer 12 and a roughened plating layer 13 are laminated on an insulating base material 11 as shown in FIG. Resistor placement process for the resist. Then, an etching step of supplying an etchant to the surface A of the roughened plating layer 13, that is, the surface on which the resist is disposed, may be performed.

The etching solution used in the etching step is not particularly limited, and can be arbitrarily selected according to the composition of the metal layer, the roughened plating layer, and the like. For example, when the reactivity of the metal layer and the roughened plating layer with respect to the etchant is substantially the same, an etchant used in the etching of a general metal layer can be preferably used.

As the etching solution, for example, a mixed aqueous solution containing one or more kinds selected from sulfuric acid, hydrogen peroxide (hydrogen peroxide water), hydrochloric acid, copper (II) chloride, and iron (III) chloride can be preferably used. The content of each component in the etching solution is not particularly limited.

The etchant may be used at room temperature, but in order to improve the reactivity, it may be used after being heated. For example, the etchant may be used after being heated to 40 ° C or higher and 50 ° C or lower.

In addition, the conductive substrate 10B in which the metal layers 12A and 12B and the roughened plating layers 13A and 13B are laminated on one surface 11a and the other surface 11b of the insulating base material 11 as shown in FIG. 1B may be patterned. Patterning steps. In this case, for example, a resist disposing step of disposing a resist having a desired pattern on the surfaces A and B of the rough plating layers 13A and 13B can be performed. After that, an etching step of supplying an etching solution to the surface A and the surface B of the rough plating layers 13A and 13B, that is, the surface on which the resist is disposed, may be performed.

The pattern formed in the etching step is not particularly limited, and may be any shape. For example, in the case of the conductive substrate 10A shown in FIG. 1A, as described above, the metal layer 12 and the roughened plating layer 13 may be formed to include a plurality of straight lines and / or a zigzag line (a zigzag straight line). Way to form a pattern.

In addition, in the case of the conductive substrate 10B shown in FIG. 1B, a pattern may be formed so that the metal layer 12A and the metal layer 12B are meshed wirings. In this case, the rough plating layer 13A is preferably patterned into the same shape as the metal layer 12A, and the rough plating layer 13B is preferably patterned into the same shape as the metal layer 12B.

In addition, for example, after the metal layer 12 and the like of the conductive substrate 10A are patterned in the patterning step, a lamination step of laminating two or more patterned conductive substrates may be performed. At the time of lamination, for example, by laminating the patterns of the metal layers of the respective conductive substrates, it is also possible to obtain a laminated conductive substrate including a mesh wiring.

The method of fixing two or more laminated conductive substrates is not particularly limited, and for example, it can be fixed by an adhesive or the like.

The conductive substrate obtained by the method for manufacturing a conductive substrate according to the present embodiment has a structure in which a roughened plating layer is laminated on a metal layer formed on at least one surface of an insulating base material. In addition, the roughened plating layer is a roughened plating layer in which a surface on the opposite side to a surface facing the insulating base material is a roughened surface. For this reason, the adhesiveness with the resist is high, and the occurrence of side corrosion can be suppressed.

Examples

The following description is based on specific examples and comparative examples, but the present invention is not limited to these examples.

(Evaluation method)

The samples produced in the following examples and comparative examples were evaluated by the following methods.

(1) Composition analysis of roughened coating

The component analysis of the roughened coating was performed by an X-ray photoelectron spectrometer (manufactured by PHI, model: QuantaSXM). It should be noted that the X-ray source used monochromatic Al (1486.6 eV).

As described later, in each of the following Examples and Comparative Examples, a conductive substrate having a structure of FIG. 1A was produced. Therefore, the surface A exposed from the outside of the roughened plating layer 13 in FIG. 1A was subjected to Ar ion etching, and the internal Ni 2P spectrum and Cu LMM spectrum at a depth of 10 nm from the outermost surface were measured.

From this, it was confirmed that elemental nickel, nickel oxide, nickel hydroxide, and copper were contained in any of Examples 1 to 10 and Comparative Examples 1 to 4.

(2) the shape and size of crystals contained in the roughened coating

The surface opposite to the surface facing the insulating substrate, which is the roughened surface of the roughened coating layer, specifically, the surface A in FIG. 1A was observed with a scanning electron microscope. The shape and size of the crystals were evaluated.

At the time of evaluation, the observation area was enlarged 50,000 times at any position on the roughened surface of the roughened plating layer. Then, the shape of crystals present in the observation area was observed. When granular crystals are observed, they are shown as grains in the column of crystal shape in Table 1, and when needle-like crystals are observed, they are shown as needles in the column of crystal shape in Table 1.

In addition, when granular crystals were observed, 20 granular crystals were selected as evaluation targets, and the average crystal grain size and standard deviation σ were measured and calculated. In addition, the grain size of a granular crystal means the diameter of the circle | round | yen which fully encompasses the minimum size of the granular crystal which measured the granular crystal. In addition, when acicular crystals were observed, 20 acicular crystals were selected as evaluation objects, and the average length, average width, average aspect ratio, and standard deviation σ were measured and calculated.

When evaluating granular crystals, the average crystal grain size and standard deviation are described in the "Crystal size / length" column in Table 1.

In the case of evaluating needle-like crystals, the average length and standard deviation of the length are described in the "Grain Size / Length" column in Table 1, and the average values of width and aspect ratio are described in "Width" "And" Aspect Ratio "columns.

Each parameter has been described above, so its description is omitted here.

(3) Side erosion

First, a dry film resist (Hitachi Chemical Co., Ltd. RY3310) was affixed to the roughened plating surface of the conductive substrates obtained in the following Examples and Comparative Examples by a laminate method. Then, UV exposure was performed through a photomask, and the resist was dissolved and developed with a 1% sodium carbonate aqueous solution. Based on this, a sample of a resist having a plurality of linear patterns parallel to each other on the roughened plating layer was prepared.

Next, the sample was immersed in an etching solution at 30 ° C. consisting of 10% by weight sulfuric acid and 3% by weight hydrogen peroxide.

Regarding the obtained sample, the resist was not peeled off, and a cross section parallel to the lamination direction of each layer of the conductive substrate and perpendicular to the linear pattern of the resist was observed. In this case, as shown in FIG. 5, the cross-sectional shapes of the patterned metal layer 52, the patterned roughened plating layer 53, and the resist 54 were laminated on the insulating base material 51. Then, the distance L between the widthwise end portion 54a of the resist and the patterned metal layer 52 in the width direction was measured as the side etching amount.

It should be noted that the conductive substrate was removed from the etchant at 60 seconds, 120 seconds, and 180 seconds after immersion to the etching solution, and was cleaned, and then the side etching amount was evaluated as described above. .

(Sample production conditions)

A conductive substrate was produced under the conditions described below, and evaluated by the evaluation method described above.

[Example 1]

A conductive substrate having a structure shown in FIG. 1A was produced.

(Metal layer forming step)

A film of a copper layer was formed as a metal layer on one surface of a long insulating substrate made of polyethylene terephthalate resin (PET) having a length of 300 m, a width of 250 mm, and a thickness of 100 μm.

In the metal layer forming step, a metal thin film layer forming step and a metal plating layer forming step are performed.

First, a metal thin film layer forming step will be described.

In the metal thin film layer forming step, the aforementioned insulating base material was used as a base material, and a copper thin film layer was formed as a metal thin film layer on one surface of the insulating base material.

In the metal thin film layer forming step, first, the above-mentioned insulating base material which has been heated to 60 ° C. in advance and removed moisture is set in a chamber of a sputtering apparatus.

Next, after evacuating the room to 1 × 10 ^-3 Pa, argon gas was introduced and the pressure in the room was 1.3 Pa.

Power was supplied to a copper target provided in advance on the cathode of the sputtering device, thereby forming a copper thin film layer having a thickness of 0.7 μm on one surface of the insulating base material.

Next, a copper plating layer was formed as the metal plating layer in the metal plating layer forming step. The copper plating layer was formed into a copper plating layer having a thickness of 0.3 μm by an electroplating method.

By performing the above-mentioned metal thin film layer forming step and metal plating layer forming step, a copper layer having a thickness of 1.0 μm was formed as the metal layer.

The substrate having the copper layer having a thickness of 1.0 μm formed on the insulating base material produced in the metal layer forming step was immersed in 20 g / L of sulfuric acid for 30 sec (seconds), and the following roughened plating layer forming step was performed after cleaning.

(Coarse plating layer forming step)

In the roughening plating layer forming step, a roughening plating layer is formed on one surface of the copper layer using a plating solution and an electrolytic plating method.

In addition, as a plating solution, a plating solution containing nickel ions, copper ions, ammonium sulfuric acid, and sodium hydroxide was prepared. In the plating solution, nickel ions and copper ions were supplied by adding nickel sulfate hexahydrate and copper sulfate pentahydrate.

Thereafter, each component was added and prepared so that the concentration of nickel ions in the plating solution was 6.5 g / L, the concentration of copper ions was 0.2 g / L, and the concentration of ammonium sulfuric acid was 11 g / L.

Further, an aqueous sodium hydroxide solution was added to the plating solution, and the pH value of the plating solution was adjusted to 3.6.

In the roughening plating layer forming step, electrolytic plating was performed under the conditions that the temperature of the plating solution was 40 ° C., the current density was 0.08 A / dm ² , and the electrolytic plating time was 180 sec, thereby forming a roughening plating layer.

The thickness of the formed rough-plated layer was 111 nm.

The conductive substrate obtained in the above steps was subjected to the component analysis of the roughened plating described above, the evaluation of the shape and size of crystals contained in the roughened plating, and the evaluation of the amount of side etching. The results are shown in Table 1.

[Examples 2 to 10]

In each example, in addition to the changes in the nickel ion concentration, copper ion concentration, pH value, current density at the time of film formation of the roughened layer, and electrolytic plating time in the roughened layer when forming the roughened layer were changed as shown in Table 1. Except for this point, a conductive substrate was produced in the same manner as in Example 1 and evaluated. The results are shown in Table 1.

[Comparative Example 1 to Comparative Example 4]

In each comparative example, in addition to the changes in the nickel ion concentration, copper ion concentration, pH value, current density at the time of film formation of the roughened layer, and electrolytic plating time in the formation of the roughened layer as shown in Table 1, Except for this point, a conductive substrate was produced in the same manner as in Example 1 and evaluated. The results are shown in Table 1.

From the results shown in Table 1, it was confirmed that in Examples 1 to 10, the roughened plating layer contained granular or needle-like crystals. It was also confirmed that in the case of granular crystals, the average grain size is 50 nm to 150 nm, in the case of acicular crystals, the average length is 100 nm to 300 nm, and the average width is 30 nm to 80 nm. The average aspect ratio is 2.0 or more and 4.5 or less.

On the other hand, in Comparative Examples 1 to 4, although it was also confirmed that the roughened plating layer contained granular or needle-like crystals, the size thereof did not satisfy the above range.

As a result, it was confirmed that the amount of side erosion can be sufficiently suppressed in Examples 1 to 10, but the amount of side erosion was larger in Comparative Examples 1 to 4.

As mentioned above, although the conductive substrate and the manufacturing method of a conductive substrate were demonstrated using embodiment, an Example, etc., this invention is not limited to the said embodiment, an Example, etc. Various modifications and changes can be made within the scope of the gist of the present invention described in the patent application scope.

This application claims priority based on Japanese Patent Application No. 2017-081580 filed with the Japan Patent Office on April 17, 2017, and the entire contents of Japanese Patent Application No. 2017-081580 are incorporated herein by reference.

Claims (5)

    A conductive substrate includes: an insulating substrate; a metal layer formed on at least one surface of the insulating substrate; and a roughened plating layer formed on the metal layer, the roughened plating layer having an average grain size of Granular crystals of 50 nm to 150 nm.         A conductive substrate comprising: an insulating substrate; a metal layer formed on at least one surface of the insulating substrate; and a roughened plating layer formed on the metal layer, the roughened plating layer having an average length of 100 nm or more Needle-shaped crystals with a diameter of 300 nm or less, an average width of 30 nm or more and 80 nm or less, and an average aspect ratio of 2.0 or more and 4.5 or less.         The conductive substrate according to claim 1 or 2, wherein the thickness of the roughened plating layer is 50 nm or more and 350 nm or less.         The conductive substrate according to any one of claims 1 to 3, wherein the metal layer is a layer of copper or a copper alloy.         A method for manufacturing a conductive substrate, comprising: a metal layer forming step of forming a metal layer on at least one surface of an insulating base material; and a roughened plating layer forming step of forming a roughened plating layer on the metal layer, wherein In the plating layer forming step, the roughened plating layer is formed into a film by an electrolytic method using a plating solution containing nickel ions and copper ions.