WO2018188134A1 - 一种彩色色阻的制作方法 - Google Patents

一种彩色色阻的制作方法 Download PDF

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Publication number
WO2018188134A1
WO2018188134A1 PCT/CN2017/082747 CN2017082747W WO2018188134A1 WO 2018188134 A1 WO2018188134 A1 WO 2018188134A1 CN 2017082747 W CN2017082747 W CN 2017082747W WO 2018188134 A1 WO2018188134 A1 WO 2018188134A1
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WIPO (PCT)
Prior art keywords
color
mark
color resist
patch
resist
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Ceased
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PCT/CN2017/082747
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English (en)
French (fr)
Inventor
甘启明
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TCL China Star Optoelectronics Technology Co Ltd
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Shenzhen China Star Optoelectronics Technology Co Ltd
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Priority to US15/539,739 priority Critical patent/US11067729B2/en
Publication of WO2018188134A1 publication Critical patent/WO2018188134A1/zh
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133509—Filters, e.g. light shielding masks
    • G02F1/133512—Light shielding layers, e.g. black matrix
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/20—Filters
    • G02B5/201—Filters in the form of arrays
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133509—Filters, e.g. light shielding masks
    • G02F1/133514—Colour filters
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133509—Filters, e.g. light shielding masks
    • G02F1/133514—Colour filters
    • G02F1/133516—Methods for their manufacture, e.g. printing, electro-deposition or photolithography

Definitions

  • the invention relates to the technical field of manufacturing a color film substrate, and in particular to a method for manufacturing color color resistance.
  • the color mask and the corresponding color block for detection can be prepared by using the same mask to reduce the number of masks and the manufacturing cost.
  • FIG. 1 is a schematic illustration of a registration mark in the prior art.
  • the alignment mark includes an alignment mark 101 and an alignment mark 102.
  • the black matrix (BM on Glass) on the glass substrate has the alignment mark 101.
  • the registration mark 102 is placed on the RGB mask.
  • the alignment mark 101 specifically includes three black matrix alignment marks.
  • the first black matrix alignment mark is separated from the second black matrix alignment mark by a width H of one sub-pixel.
  • the first black matrix alignment mark is separated from the third black matrix alignment mark by the width 2*H of the two sub-pixels.
  • Move the RGB mask When the alignment marks 102 on the RGB mask are sequentially aligned with the respective black matrix alignment marks 101, the patches and color resists corresponding to the respective black matrix alignment marks 101 are formed at the corresponding positions.
  • 2 is a first schematic diagram of an alignment monitoring mark in the prior art.
  • the alignment detection marks include an R patch 201, a G patch 202, and a B patch 203.
  • the R color patch 201 is separated from the G color patch 202 by H
  • the R color patch 201 is separated from the B color patch 203 by 2*H.
  • FIG. 3 is a second schematic diagram of an alignment monitoring mark in the prior art.
  • H is smaller than the width C of the color patch in the high PPI mode (ie, the high pixel density mode, in which the pixel size is small)
  • the R color patch 201 and the G color patch 202 may overlap. This results in the inability to measure the positional error of the color resist.
  • FIG. 4 is a third schematic diagram of an alignment monitoring mark in the prior art.
  • the color blocks can be made small.
  • the smaller size patches have the risk of being easily stripped.
  • a disadvantage of the prior art method for fabricating color resists is that when the height of the sub-pixels is lower than the color in the high PPI mode When the width of the block is overlapped, the overlap between the patches may result in the inability to measure the positional error of the color resist, and if the patch is made smaller, there is a risk that the smaller-sized patch is easily peeled off.
  • the present invention provides a method for fabricating a color resist, comprising:
  • a black matrix layer having a first mark, a second mark, a third mark, a first hollow area, a second hollow area, and a third hollow area on the base substrate;
  • first mark/first hollow area and the second mark/second hollow area are separated by a first distance
  • the regions are spaced apart by a second distance; the first distance and the second distance are configured such that the first color patch, the second color patch, and the third color patch do not overlap each other.
  • H 2 (3*n 2 + 2) * P; wherein n 2 is an integer satisfying n 2 ⁇ 0 or n 2 ⁇ -2.
  • the first mark, the second mark, the third mark, the first hollowed out area, the second hollowed out area, and the third hollowed out area are formed synchronously using the same mask.
  • the first color resist, the second color resist, and the third color resist are different, and are respectively one of a red color resist, a green color resist, and a blue color resist.
  • the first color patch, the second color patch, and the third color patch are located between the sub-pixel and the sub-pixel.
  • the first indicia, the second indicia, and the third indicia are located in a non-display area.
  • the method further includes: when forming the black matrix layer, further having the black matrix layer having a fourth mark and a fourth open area;
  • first mark/first hollow area and the fourth mark/fourth open area are separated by a third distance; the first distance, the second distance and the third distance are configured to enable the first The one color block, the second color block, the third color block, and the fourth color block do not overlap each other.
  • H 2 (4*n 2 + 2) * P; wherein n 2 is an integer satisfying n 2 ⁇ 0 or n 2 ⁇ -2;
  • the first color resist, the second color resist, the third color resist, and the fourth color resist are different, and are respectively a red color resist, a green color resist, a blue color resist, and a white color resist.
  • a red color resist a green color resist
  • a blue color resist a blue color resist
  • a white color resist a white color resist.
  • the first color patch, the second color patch, the third color patch, and the fourth color patch are located between the sub-pixel and the sub-pixel.
  • the photomask is sequentially moved to align the alignment mark with the first mark, the second mark, and the third mark, respectively, and the photomask is used to form a corresponding layer on the black matrix layer.
  • the first mark and the second mark are spaced apart by a first distance
  • the first mark and the third mark are spaced apart by a second distance.
  • Figure 1 shows a schematic diagram of a registration mark in the prior art
  • Figure 2 shows a first schematic diagram of an alignment monitoring mark in the prior art
  • Figure 3 shows a second schematic diagram of an alignment monitoring mark in the prior art
  • Figure 4 shows a third schematic diagram of the alignment monitoring mark in the prior art
  • FIG. 5 is a flow chart showing a method of fabricating a color color resist according to a first embodiment of the present invention
  • Figure 6 is a diagram showing an alignment mark according to a first embodiment of the present invention.
  • Figure 7 shows a schematic view of an alignment monitoring mark in accordance with a first embodiment of the present invention
  • Figure 8 is a view showing a color resist formed in accordance with a first embodiment of the present invention.
  • FIG. 9 is a flow chart showing a method of fabricating a color color resist according to a second embodiment of the present invention.
  • Figure 10 is a diagram showing an alignment mark according to a second embodiment of the present invention.
  • Figure 11 is a schematic view showing an alignment monitoring mark according to a second embodiment of the present invention.
  • Fig. 12 is a view showing a color resist formed in accordance with a second embodiment of the present invention.
  • the present embodiment is mainly directed to a description of a method of fabricating color shades of three sub-pixels.
  • FIG. 5 is a flow chart showing a method of fabricating a color color resist according to a first embodiment of the present invention. As shown in FIG. 5, the manufacturing method may include the following steps S510 to S570.
  • color masking can be performed using only two photomasks. These two masks can be referred to as black matrix masks and color masks.
  • the black matrix reticle may include a mask pattern and a cutout region of the alignment mask (ie, the first marker, the second marker, and the third marker) (ie, the first hollow region, the second hollow region, and the third The mask pattern of the hollowed out area.
  • the color resist mask may include a registration mark, an overlay mask (ie, a first patch, a second patch, and a third patch) and a color resist (ie, a first color resist, a second color) Resistance and third Mask pattern of color resistance).
  • step S510 a first mark 601, a second mark 602, a third mark 603 as shown in FIG. 6, a first hollow area 701 as shown in FIG. 7, and a second hollow area 702 are formed on the base substrate. And a black matrix layer of the third hollow region 703.
  • the first mark 601, the second mark 602, the third mark 603, the first hollowed out area 701, the second hollowed out area 702, and the third hollowed out area 703 are formed synchronously by the same mask.
  • the reticle described here is a black matrix reticle.
  • the first mark 601, the second mark 602, and the third mark 603 are formed on the base substrate such as a glass substrate by using the alignment mark mask pattern of the black matrix mask.
  • the first hollow region 701, the second hollow region 702, and the third hollow region 703 are formed by using a mask pattern of the hollow region of the black matrix mask.
  • the first mark 601, the second mark 602, and the third mark 603 are located in the non-display area so as not to affect the normal display, and do not affect the aperture ratio of the liquid crystal display panel.
  • the first hollow area 701, the second hollow area 702, and the third hollow area 703 are located in the display area. Specifically, the first hollow region 701, the second hollow region 702, and the third hollow region 703 are located between the sub-pixel and the sub-pixel.
  • step S520 the reticle is moved so that the alignment mark 604 on the reticle as shown in FIG. 6 is aligned with the first mark 601.
  • the photomask mentioned here is a color resist mask.
  • the alignment mark 604 on the color resist mask is aligned with the first mark 601, and the color resist mask is positioned, and the process proceeds to step S530.
  • step S530 a first color resist 801 as shown in FIG. 8 and a first color patch 704 as shown in FIG. 7 are formed on the black matrix layer by using a color resist mask, and according to the first color block 704 and the first The positional relationship of the hollow region 701 is used to check the position of the first color resist 801.
  • a first color patch 704 is formed on the black matrix layer using the alignment monitor mark mask pattern on the color resist mask.
  • the first color resist 801 is formed on the black matrix layer by using the color resist mask pattern on the color resist mask.
  • the position of the first color resist 801 can be detected by detecting the position error of the first color block 704. Specifically, as shown in FIG. 7, the position of the first color resist 801 is checked by detecting whether the first color patch 704 is located at the center of the first hollow region 701. If the position of the first color resist 801 is accurate, the formed first color patch 704 is located at the center of the first hollow region 701.
  • step S540 the color resist mask is moved to align the alignment mark 604 with the second mark 602.
  • the alignment mark 604 on the color resist mask is aligned with the second mark 602, and the color resist mask is positioned, and the process proceeds to step S550.
  • step S550 a second color resist 802 as shown in FIG. 8 and a second color patch 705 as shown in FIG. 6 are formed on the black matrix layer by using a color resist mask, and according to the second color patch 705 and the second color The positional relationship of the hollowed out area 702 is checked The position of the dichroic 802.
  • a second color patch 705 is formed on the black matrix layer using the alignment monitor mark mask pattern on the color resist mask.
  • a second color resist 802 is formed on the black matrix layer by using the color resist mask pattern on the color resist mask. The position of the second color resist 802 is checked by detecting whether the second color patch 705 is located at the center of the second hollow region 702. If the position of the second color resist 802 is accurate, the formed second color patch 705 is located just at the center of the second hollow region 702.
  • step S560 the color resist mask is moved to align the alignment mark 604 with the third mark 603.
  • the alignment mark 604 on the color resist mask is aligned with the third mark 603, and the color resist mask is positioned, and the process proceeds to step S570.
  • step S570 the third color resist 803 and the third color patch 706 as shown in FIG. 8 are formed on the black matrix layer by using the color resist mask, and according to the positional relationship between the third color patch 706 and the third hollow region 703. To check the position of the third color resist 803.
  • a third color patch 706 is formed on the black matrix layer using the alignment monitor mark mask pattern on the color resist mask.
  • a third color resist 803 is formed on the black matrix layer by using the color resist mask pattern on the color resist mask. The position of the third color resist 803 is checked by detecting whether the third color patch 706 is located at the center of the third hollow region 703. If the position of the third color resist 803 is accurate, the formed third color patch 706 is located just at the center of the third hollow region 703.
  • the first mark 601 and the second mark 602 are spaced apart by a first distance.
  • the first mark 601 and the third mark 603 are spaced apart by a second distance.
  • the first hollow area 701 and the second hollow area 702 are spaced apart by a first distance.
  • the first hollow area 701 and the third hollow area 703 are spaced apart by a second distance.
  • the first distance and the second distance are configured such that the first color patch 704, the second color patch 705, and the third color patch 706 do not overlap each other.
  • the first color block 704, the second color block 705, and the third color block 706 are located between the sub-pixel and the sub-pixel.
  • the alignment mark 604 is respectively associated with the first mark 601, the second mark 602, and the third.
  • the marks 603 are aligned, so that the first color patch 704 formed in step S530 and the second color patch 705 formed in step S550 should theoretically be spaced apart by a first distance, and the first color patch 704 formed in step S530 is A second distance should be spaced between the third color patch 706 formed in step S570.
  • a preferred embodiment of the present invention provides a configuration for the first distance and the second distance.
  • n 1 is an integer satisfying n 1 ⁇ 1 or n 1 ⁇ -1, and P is a width of the sub-pixel.
  • n 2 is an integer satisfying n 2 ⁇ 0 or n 2 ⁇ -2, and P is a width of the sub-pixel.
  • n 1 is an integer satisfying n 1 ⁇ 1
  • n 2 is an integer satisfying n 2 ⁇ 1
  • the color resist mask is shifted to the right.
  • n 1 is an integer satisfying n 1 ⁇ -1
  • n 2 is an integer satisfying n 2 ⁇ -2
  • the color resist mask is shifted to the left.
  • the first color block 704 is spaced apart from the second color block 705 by a width of 4 sub-pixels, and the first color block 704 and the third color block 706 are spaced apart by a width of 2 sub-pixels.
  • the first color patch 704, the second color patch 705, and the third color patch 706 do not overlap each other.
  • the first color block 704 is spaced apart from the second color block 705 by a width of four sub-pixels, and the first color block 704 and the third color block 706 are spaced apart by a width of eight sub-pixels. It can be seen that the first color patch 704, the second color patch 705, and the third color patch 706 do not overlap each other.
  • the first color resist 801, the second color resist 802, and the third color resist 803 are different, and are respectively one of a red color resist, a green color resist, and a blue color resist.
  • the first color resist 801 is a red color resist.
  • the second color resist 802 is a green color resist.
  • the third color resistance 803 is a blue color resistance.
  • the photomask is sequentially moved to align the alignment mark 604 with the first mark 601, the second mark 602 and the third mark 603, respectively, and the mask is used in the black matrix layer.
  • a first color resist 801 corresponding to the first mark 601 and a first color block 704 are formed thereon, a second color resist 802 and a second color block 705 corresponding to the second mark 602, and a third color resist 803 corresponding to the third mark 603.
  • a third color block 706 The first mark 601 and the second mark 602 are spaced apart by a first distance, and the first mark 601 and the third mark 603 are spaced apart by a second distance.
  • the color patches can be made without changing the color patch size. Overlapping overcomes the drawbacks of prior art color block overlap and the risk of color chip flaking.
  • the present embodiment is mainly directed to a description of a method of fabricating color shades of four sub-pixels.
  • FIG. 9 is a flow chart showing a method of fabricating a color color resist according to a second embodiment of the present invention. As shown in Figure 9, The manufacturing method may include the following steps S910 to S990.
  • the following process steps S910 to S990 can also be performed using only two photomasks for color color resistance. These two masks can be referred to as black matrix masks and color masks.
  • the black matrix reticle may include a mask pattern and a cutout area of the alignment mark (ie, the first mark, the second mark, the third mark, and the fourth mark) (ie, the first hollow area, the second open area, the third Mask pattern for the hollowed out area and the fourth hollowed out area.
  • the color resist mask may include a registration mark, an alignment monitoring mark (a first color block, a second color block, a third color block, and a fourth color block) and a color resistance (ie, a first color resistance, a second color resistance) , third color resistance and fourth color resistance) mask pattern.
  • step S910 a first mark 601, a second mark 602, a third mark 603, a fourth mark 1001, and a first hollow area 701 as shown in FIG. 11 are formed on the base substrate, as shown in FIG. A black matrix layer of the second hollow region 702, the third hollow region 703, and the fourth hollow region 1101.
  • step S920 the reticle is moved so that the alignment mark 604 on the reticle as shown in FIG. 10 is aligned with the first mark 601.
  • the photomask mentioned here is a color resist mask.
  • the alignment mark 604 on the color resist mask is aligned with the first mark 601, and the color resist mask is positioned, and the process proceeds to step S930.
  • step S930 a first color resist 801 as shown in FIG. 12 and a first color patch 704 as shown in FIG. 11 are formed on the black matrix layer by using a photomask, and according to the first color patch 704 and the first hollow region.
  • the positional relationship of 701 checks the position of the first color resist 801.
  • a first color patch 704 is formed on the black matrix layer using the alignment monitor mark mask pattern on the color resist mask.
  • the first color resist 801 is formed on the black matrix layer by using the color resist mask pattern on the color resist mask.
  • the position of the first color resist 801 can be detected by detecting the position error of the first color block 704. Specifically, as shown in FIG. 11, the position of the first color resist 801 is checked by detecting whether the first color patch 704 is located at the center of the first hollow region 701. If the position of the first color resist 801 is accurate, the formed first color patch 704 is located at the center of the first hollow region 701.
  • step S940 the color resist mask is moved to align the alignment mark 604 with the second mark 602.
  • the alignment mark 604 on the color resist mask is aligned with the second mark 602, and the color resist mask is positioned, and the process proceeds to step S950.
  • step S950 a second color resist 802 as shown in FIG. 12 and a second color patch 705 as shown in FIG. 10 are formed on the black matrix layer by using the color resist mask, and according to the second color block 705 and the second color The positional relationship of the hollowed out region 702 is used to check the position of the second color resist 802.
  • a second color patch 705 is formed on the black matrix layer using the alignment monitor mark mask pattern on the color resist mask.
  • a second color resist 802 is formed on the black matrix layer by using the color resist mask pattern on the color resist mask. Pass inspection It is measured whether the second color patch 705 is located at the center of the second hollow region 702 to check the position of the second color resist 802. If the position of the second color resist 802 is accurate, the formed second color patch 705 is located just at the center of the second hollow region 702.
  • step S960 the color resist mask is moved to align the alignment mark 604 with the third mark 603.
  • the alignment mark 604 on the color resist mask is aligned with the third mark 603, and the color resist mask is positioned, and the flow proceeds to step S970.
  • step S970 a third color resist 803 as shown in FIG. 12 and a third color patch 706 as shown in FIG. 10 are formed on the black matrix layer by using a color resist mask, and according to the third color patch 706 and the third color
  • the positional relationship of the hollowed out area 703 checks the position of the third color resist 803.
  • a third color patch 706 is formed on the black matrix layer using the alignment monitor mark mask pattern on the color resist mask.
  • a third color resist 803 is formed on the black matrix layer by using the color resist mask pattern on the color resist mask. The position of the third color resist 803 is checked by detecting whether the third color patch 706 is located at the center of the third hollow region 703. If the position of the third color resist 803 is accurate, the formed third color patch 706 is located just at the center of the third hollow region 703.
  • step S980 the color resist mask is moved to align the alignment mark 604 with the fourth mark 1001.
  • the alignment mark 604 on the color resist mask is aligned with the fourth mark 1001, and the color resist mask positioning is completed, and the flow proceeds to step S990.
  • step S990 the fourth color resist 1201 and the fourth color block 1102 as shown in FIG. 12 are formed on the black matrix layer by using the color resist mask, and according to the positional relationship between the fourth color block 1102 and the fourth hollow area 1101. To check the position of the fourth color resistance 1201.
  • a fourth color block 1102 is formed on the black matrix layer using the alignment monitor mark mask pattern on the color resist mask.
  • a fourth color resist 1201 is formed on the black matrix layer by using the color resist mask pattern on the color resist mask. The position of the fourth color resist 1201 is checked by detecting whether the fourth color patch 1102 is located at the center of the fourth hollow region 1101. If the position of the fourth color resist 1201 is accurate, the formed fourth color patch 1102 is located just at the center of the fourth hollow region 1101.
  • the first mark 601 and the second mark 602 are spaced apart by a first distance.
  • the first mark 601 and the third mark 603 are spaced apart by a second distance.
  • the first mark 601 and the fourth mark 1001 are spaced apart by a third distance.
  • the first hollow area 701 and the second hollow area 702 are spaced apart by a first distance.
  • the first hollow area 701 and the third hollow area 703 are spaced apart by a second distance.
  • the third hollow area 701 and the fourth hollow area 1101 are spaced apart by a third distance.
  • the first distance, the second distance, and the third distance are configured such that the first color patch 704, the second color patch 705, the third color patch 706, and the fourth color patch 1102 do not overlap each other.
  • the alignment mark 604 is respectively associated with the first mark 601 and the second mark 602.
  • the third mark 603 and the fourth mark 1001 are aligned, so the first color block 704 formed theoretically in step S930 is
  • the first color patches 705 formed in step S950 should be spaced apart by a first distance
  • the first color patch 704 formed in step S930 and the third color patch 706 formed in step S970 should be spaced apart by a second distance.
  • a third distance should be spaced between the first color patch 704 formed in step S930 and the fourth color patch 1102 formed in step S990.
  • a preferred embodiment of the present invention provides a configuration for the first distance, the second distance, and the third distance.
  • n 1 is an integer satisfying n 1 ⁇ 1 or n 1 ⁇ -1, and P is a width of the sub-pixel.
  • n 2 is an integer satisfying n 2 ⁇ 0 or n 2 ⁇ -2, and P is a width of the sub-pixel.
  • n 3 is an integer satisfying n 3 ⁇ 0 or n 3 ⁇ -2, and P is a width of the sub-pixel.
  • n 1 is an integer satisfying n 1 ⁇ 1
  • n 2 is an integer satisfying n 2 ⁇
  • n 3 is an integer satisfying n 3 ⁇
  • the resist mask is shifted to the right.
  • n 1 is an integer satisfying n 1 ⁇ -1
  • n 2 is an integer satisfying n 2 ⁇ -2
  • n 3 is an integer satisfying n 3 ⁇ -2
  • the color resist mask is shifted leftward.
  • the first color block 704 is spaced apart from the second color block 705 by a width of 5 sub-pixels, the first color block 704 is spaced apart from the third color block 706 by a width of 10 sub-pixels, and the first color block 704 is separated from the fourth color block 1102 by 15 sub-blocks.
  • the first color patch 704, the second color patch 705, the third color patch 706, and the fourth color patch 1102 do not overlap each other.
  • the first color resist 801, the second color resist 802, the third color resist 803, and the fourth color resist 1201 are different, and are respectively in a red color resist, a green color resist, a blue color resist, and a white color resist.
  • the first color resist 801 is a red color resist.
  • the second color resist 802 is a green color resist.
  • the third color resistance 803 is a blue color resistance.
  • the fourth color resistance 1201 is a white color resistance.
  • the first color block 704, the second color block 705, the third color block 706, and the fourth color block 1102 are located between the sub-pixel and the sub-pixel.
  • the photomask is sequentially moved to align the alignment mark 604 with the first mark 601, the second mark 602, the third mark 603 and the fourth mark 1001, respectively, and the mask is used.
  • a first color resist 801 corresponding to the first mark 601 and a first color block 704, a second color resist 802 and a second color block 705 corresponding to the second mark 602, and a third color resist corresponding to the third mark 603 are formed on the array.
  • the first mark 601 and the second mark 602 are spaced apart by a first distance
  • the first mark 601 and the third mark 603 are spaced apart by a second distance
  • the first mark 601 and the fourth mark 1001 are separated by a third distance.
  • the first distance, the second distance, and the third distance are configured such that the first color patch 704, the second color patch 705, the third color patch 706, and the fourth color patch 1102 do not overlap each other, the color can be changed without changing Under the premise of the block size, the color blocks do not overlap each other, thereby overcoming the defects of the color block overlap and the risk of color block peeling in the prior art.

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Abstract

一种彩色色阻的制作方法，其中，移动光罩使对位标记（604）分别与位于黑矩阵层的各标记（601、602、603）对齐；分别用光罩在黑矩阵层形成各色阻（801、802、803）和相应各色块（704、705、706）；并根据各色块（704、705、706）和相应镂空区域（701、702、703）的位置关系核对各色阻（801、802、803）位置；其中，第一标记（601）分别与第二标记（602）、第三标记（603）之间的间隔被配置成使各色块（704、705、706）互不交叠。不改变色块（704、705、706）大小且各色块（704、705、706）互不交叠。

Description

一种彩色色阻的制作方法
本申请要求享有2017年4月12日提交的名称为“一种彩色色阻的制作方法”的中国专利申请CN201710236026.X的优先权，其全部内容通过引用并入本文中。
技术领域
本发明涉及彩膜基板的制造技术领域，尤其涉及一种彩色色阻的制作方法。
背景技术
目前，在制作彩色色阻时，可通过采用同一光罩制备彩色色阻及相应的检测用色块，来降低光罩数量和制作成本。
在开始制作彩色色阻时，需要利用黑色矩阵光罩在衬底基板上形成对位标记。图1为现有技术中对位标记的示意图。如图1所示，对位标记(Alignment Mark)包括对位标记101和对位标记102。其中，玻璃基板上的黑色矩阵(BM on Glass)具有对位标记101。而对位标记102则设置在RGB光罩(RGB Mask)上。
对位标记101具体包括三个黑色矩阵对位标记。其中，第一个黑色矩阵对位标记与第二个黑色矩阵对位标记相隔一个子像素的宽度H。第一个黑色矩阵对位标记与第三个黑色矩阵对位标记相隔两个子像素的宽度2*H。移动RGB光罩。当RGB光罩上的对位标记102依次与各个黑色矩阵对位标记101对准时，在相应的位置形成对应各个黑色矩阵对位标记101的色块和色阻。图2为现有技术中的对准监测标记的第一种示意图。如图2所示，对准检测标记包括R色块201、G色块202和B色块203。R色块201与G色块202相隔H，R色块201与B色块203相隔2*H。
图3为现有技术中的对准监测标记的第二种示意图。如图3所示，当在高PPI模式(即高像素密度模式，在此模式下像素尺寸小)下H小于色块的宽度C时，R色块201与G色块202会产生交叠，从而导致无法测量彩色色阻的位置误差的问题。
图4为现有技术中的对准监测标记的第三种示意图。为了使色块不产生交叠，如图4所示，可以将各色块做小。但是尺寸较小的色块会存在易被剥离的风险。
现有技术中彩色色阻的制作方法的缺陷在于：当在高PPI模式下子像素的宽度小于色 块的宽度时，色块之间会产生交叠，从而导致无法测量彩色色阻的位置误差的问题，而将色块做小又会存在尺寸较小的色块易被剥离的风险。
发明内容
为了解决上述技术问题，本发明提供了一种彩色色阻的制作方法，包括：
在衬底基板上形成具有第一标记、第二标记、第三标记、第一镂空区域、第二镂空区域和第三镂空区域的黑色矩阵层；
移动光罩，使所述光罩上的对位标记与所述第一标记对齐；利用所述光罩在所述黑色矩阵层上形成第一色阻和第一色块，并根据所述第一色块和所述第一镂空区域的位置关系来核对所述第一色阻的位置；
移动所述光罩，使所述对位标记与所述第二标记对齐；利用所述光罩在所述黑色矩阵层上形成第二色阻和第二色块，并根据所述第二色块和所述第二镂空区域的位置关系来核对所述第二色阻的位置；
移动所述光罩，使所述对位标记与所述第三标记对齐；利用所述光罩在所述黑色矩阵层上形成第三色阻和第三色块，并根据所述第三色块和所述第三镂空区域的位置关系来核对所述第三色阻的位置；
其中，所述第一标记/第一镂空区域和所述第二标记/第二镂空区域之间间隔第一距离，所述第一标记/第一镂空区域和所述第三标记/第三镂空区域之间间隔第二距离；所述第一距离和第二距离被配置成使所述第一色块、第二色块和第三色块互不交叠。
在一个实施例中，所述第一距离H1满足：H1＝(3*n1+1)*P；其中，n1为满足n1≥1或n1≦-1的整数，P为子像素的宽度；
所述第二距离H2满足：H2＝(3*n2+2)*P；其中，n2为满足n2≥0或n2≦-2的整数。
在一个实施例中，所述第一标记、第二标记、第三标记、第一镂空区域、第二镂空区域和第三镂空区域利用同一光罩同步形成。
在一个实施例中，所述第一色阻、第二色阻和第三色阻各不相同，并且分别为红色色阻、绿色色阻和蓝色色阻中的一种。
在一个实施例中，所述第一色块、第二色块和第三色块位于子像素与子像素之间的位置。
在一个实施例中，所述第一标记、第二标记和第三标记位于非显示区。
在一个实施例中，还包括：在形成所述黑色矩阵层时，还使所述黑色矩阵层具有第四标记和第四镂空区域；
移动所述光罩，使所述光罩上的对位标记与所述第四标记对齐；利用所述光罩在所述黑色矩阵层上形成第四色阻和第四色块，并根据所述第四色块和所述第四镂空区域的位置关系来核对所述第四色阻的位置；
其中，所述第一标记/第一镂空区域和所述第四标记/第四镂空区域之间间隔第三距离；所述第一距离、第二距离和第三距离被配置成使所述第一色块、第二色块、第三色块和第四色块互不交叠。
在一个实施例中，所述第一距离H1满足：H1＝(4*n1+1)*P；其中，n1为满足n1≥1或n1≦-1的整数，P为子像素的宽度；
所述第二距离H2满足：H2＝(4*n2+2)*P；其中，n2为满足n2≥0或n2≦-2的整数；
所述第三距离H3满足H3＝(4*n3+3)*P；其中，n3为满足n3≥0或n3≦-2的整数。
在一个实施例中，所述第一色阻、第二色阻、第三色阻和第四色阻各不相同，并且分别为红色色阻、绿色色阻、蓝色色阻和白色色阻中的一种。
在一个实施例中，所述第一色块、第二色块、第三色块和第四色块位于子像素与子像素之间的位置。
与现有技术相比，上述方案中的一个或多个实施例可以具有如下优点或有益效果：
应用本发明实施例提供的彩色色阻的制作方法，依次移动光罩使对位标记分别与第一标记、第二标记和第三标记对齐，并利用该光罩在黑色矩阵层上形成对应第一标记的第一色阻和第一色块，对应第二标记的第二色阻和第二色块、以及对应第三标记第三色阻和第三色块。第一标记和第二标记之间间隔第一距离，第一标记和第三标记之间间隔第二距离。当第一距离和第二距离被配置成使第一色块、第二色块和第三色块互不交叠时，能够在不改变色块大小的前提下使得各色块互不交叠。
本发明的其它特征和优点将在随后的说明书中阐述，并且部分地从说明书中变得显而易见，或者通过实施本发明而了解。本发明的目的和其他优点可通过在说明书、权利要求书以及附图中所特别指出的结构来实现和获得。
附图说明
附图用来提供对本发明的进一步理解，并且构成说明书的一部分，与本发明的实施例 共同用于解释本发明，并不构成对本发明的限制。在附图中：
图1示出了现有技术中的对位标记的示意图；
图2示出了现有技术中的对准监测标记的第一种示意图；
图3示出了现有技术中的对准监测标记的第二种示意图；
图4示出了现有技术中的对准监测标记的第三种示意图；
图5示出了根据本发明第一实施例的彩色色阻的制作方法的流程示意图；
图6示出了根据本发明第一实施例的对位标记的示意图；
图7示出了根据本发明第一实施例的对准监测标记的示意图；
图8示出了根据本发明第一实施例形成的色阻的示意图；
图9示出了根据本发明第二实施例的彩色色阻的制作方法的流程示意图；
图10示出了根据本发明第二实施例的对位标记的示意图；
图11示出了根据本发明第二实施例的对准监测标记的示意图；
图12示出了根据本发明第二实施例形成的色阻的示意图。
具体实施方式
以下将结合附图及实施例来详细说明本发明的实施方式，借此对本发明如何应用技术手段来解决技术问题，并达成技术效果的实现过程能充分理解并据以实施。需要说明的是，只要不构成冲突，本发明中的各个实施例以及各实施例中的各个特征可以相互结合，所形成的技术方案均在本发明的保护范围之内。
第一实施例
作为示例，本实施例主要针对三个子像素的彩色色阻的制作方法的说明。
图5示出了根据本发明第一实施例的彩色色阻的制作方法的流程示意图。如图5所示，该制作方法可以包括如下步骤S510至S570。
以下工艺步骤S510至S570，可以仅利用两个光罩进行彩色色阻的制作。这两个光罩可以称为黑矩阵光罩和色阻光罩。黑矩阵光罩可以包括对位标记(Alignment Mask)(即，第一标记、第二标记和第三标记)的掩膜图样和镂空区域(即，第一镂空区域、第二镂空区域和第三镂空区域)的掩膜图样。色阻光罩可以包括对位标记、对位监测标记(Overlay Mask)(即，第一色块、第二色块和第三色块)和色阻(即，第一色阻、第二色阻和第三 色阻)的掩膜图样。
在步骤S510中，在衬底基板上形成具有如图6所示的第一标记601、第二标记602、第三标记603、如图7所示的第一镂空区域701、第二镂空区域702和第三镂空区域703的黑色矩阵层。
优选的，第一标记601、第二标记602、第三标记603、第一镂空区域701、第二镂空区域702和第三镂空区域703利用同一光罩同步形成。这里所说的光罩为黑矩阵光罩。利用黑矩阵光罩的对位标记掩膜图样在例如为玻璃基板的衬底基板上形成第一标记601、第二标记602、第三标记603。同时，利用黑矩阵光罩的镂空区域的掩膜图样形成第一镂空区域701、第二镂空区域702和第三镂空区域703。
优选的，第一标记601、第二标记602和第三标记603位于非显示区，从而不影响正常显示，不会对液晶显示面板的开口率造成影响。第一镂空区域701、第二镂空区域702和第三镂空区域703位于显示区。具体地，第一镂空区域701、第二镂空区域702和第三镂空区域703位于子像素与子像素之间的位置。
在步骤S520中，移动光罩，使如图6所示的光罩上的对位标记604与第一标记601对齐。这里所说的光罩为色阻光罩。色阻光罩上的对位标记604与第一标记601对齐，色阻光罩定位完成，转到步骤S530。
在步骤S530中，利用色阻光罩在黑色矩阵层上形成如图8所示的第一色阻801和如图7所示的第一色块704，并根据第一色块704和第一镂空区域701的位置关系来核对第一色阻801的位置。
具体地，利用色阻光罩上的对位监测标记掩膜图样在黑色矩阵层上形成第一色块704。同时，利用色阻光罩上的色阻掩膜图样在黑色矩阵层上形成第一色阻801。
由于制作第一色块704和第一色阻801是在同一道光罩下进行的，那么可以通过检测第一色块704的位置误差来检测第一色阻801的位置。具体地，如图7所示，通过检测第一色块704是否位于第一镂空区域701的中心来核对第一色阻801的位置。如果第一色阻801的位置准确，则所形成的第一色块704恰位于第一镂空区域701的中心。
在步骤S540中，移动色阻光罩，使对位标记604与第二标记602对齐。色阻光罩上的对位标记604与第二标记602对齐，色阻光罩定位完成，转到步骤S550。
在步骤S550中，利用色阻光罩在黑色矩阵层上形成如图8所示的第二色阻802和如图6所示的第二色块705，并根据第二色块705和第二镂空区域702的位置关系来核对第 二色阻802的位置。
具体地，利用色阻光罩上的对位监测标记掩膜图样在黑色矩阵层上形成第二色块705。同时，利用色阻光罩上的色阻掩膜图样在黑色矩阵层上形成第二色阻802。通过检测第二色块705是否位于第二镂空区域702的中心来核对第二色阻802的位置。如果第二色阻802的位置准确，则所形成的第二色块705恰位于第二镂空区域702的中心。
在步骤S560中，移动色阻光罩，使对位标记604与第三标记603对齐。色阻光罩上的对位标记604与第三标记603对齐，色阻光罩定位完成，转到步骤S570。
在步骤S570中，利用色阻光罩在黑色矩阵层上形成如图8所示的第三色阻803和第三色块706，并根据第三色块706和第三镂空区域703的位置关系来核对第三色阻803的位置。
具体地，利用色阻光罩上的对位监测标记掩膜图样在黑色矩阵层上形成第三色块706。同时，利用色阻光罩上的色阻掩膜图样在黑色矩阵层上形成第三色阻803。通过检测第三色块706是否位于第三镂空区域703的中心来核对第三色阻803的位置。如果第三色阻803的位置准确，则所形成的第三色块706恰位于第三镂空区域703的中心。
在本实施例中，第一标记601和第二标记602之间间隔第一距离。第一标记601和第三标记603之间间隔第二距离。第一镂空区域701和第二镂空区域702之间间隔第一距离。第一镂空区域701和第三镂空区域703之间间隔第二距离。重要地，第一距离和第二距离被配置成使第一色块704、第二色块705和第三色块706互不交叠。
优选的，第一色块704、第二色块705和第三色块706位于子像素与子像素之间的位置。
在应用本实施例的方法制作彩色色阻时，由于在步骤S520、步骤S540和步骤S560中，依次移动色阻光罩使得对位标记604分别与第一标记601、第二标记602和第三标记603对齐，因此理论上在步骤S530中形成的第一色块704与在步骤S550中形成的第二色块705之间应间隔第一距离，在步骤S530中形成的第一色块704与和步骤S570中形成的第三色块706之间应间隔第二距离。通过合理配置第一距离和第二距离的大小，可以在保持色块大小不变的基础上有效避免第一色块704、第二色块705和第三色块706的相互交叠。
本发明一优选的实施例给出了针对第一距离和第二距离的配置方案。
具体地，第一距离H1满足：H1＝(3*n1+1)*P。其中，n1为满足n1≥1或n1≦-1的整数， P为子像素的宽度。第二距离H2满足：H2＝(3*n2+2)*P。其中，n2为满足n2≥0或n2≦-2的整数，P为子像素的宽度。
需要说明的是，当n1为满足n1≥1的整数，且n2为满足n2≥0的整数时，色阻光罩右移。当n1为满足n1≦-1的整数，且n2为满足n2≦-2的整数时，色阻光罩左移。
具体地，如图8所示，取n1＝1，n2＝0，可得H1＝4*P，H2＝2*P。也即，色阻光罩进行初始对位形成第一色阻801和第一色块704后，色阻光罩从初始位置向右移动至第二标记602处(相当于向右移动4个子像素的宽度)形成第二色阻802和第二色块705，从初始位置向右移动至第三标记603处(相当于向右移动2个子像素的宽度)形成第三色阻803和第三色块706。第一色块704与第二色块705间隔4个子像素的宽度，第一色块704与第三色块706间隔2个子像素的宽度。第一色块704、第二色块705和第三色块706互不交叠。
可选的，还可以取n1＝1，n2＝2，可得H1＝4*P，H2＝8*P。这样，第一色块704与第二色块705间隔4个子像素的宽度，第一色块704与第三色块706间隔8个子像素的宽度。可以看出，第一色块704、第二色块705和第三色块706互不交叠。
优选的，第一色阻801、第二色阻802和第三色阻803各不相同，并且分别为红色色阻、绿色色阻和蓝色色阻中的一种。例如，第一色阻801为红色色阻。第二色阻802为绿色色阻。第三色阻803为蓝色色阻。
应用本发明实施例提供的彩色色阻的制作方法，依次移动光罩使对位标记604分别与第一标记601、第二标记602和第三标记603对齐，并利用该光罩在黑色矩阵层上形成对应第一标记601的第一色阻801和第一色块704，对应第二标记602的第二色阻802和第二色块705，以及对应第三标记603的第三色阻803和第三色块706。第一标记601和第二标记602之间间隔第一距离，第一标记601和第三标记603之间间隔第二距离。当第一距离和第二距离被配置成使第一色块704、第二色块705和第三色块706互不交叠时，能够在不改变色块大小的前提下使得各色块互不交叠，从而克服了现有技术中色块交叠以及存在色块剥落风险的缺陷。
第二实施例
作为示例，本实施例主要针对四个子像素的彩色色阻的制作方法的说明。
图9示出了根据本发明第二实施例的彩色色阻的制作方法的流程示意图。如图9所示， 该制作方法可以包括如下步骤S910至S990。
与第一实施例相同，以下工艺步骤S910至S990也可以仅利用两个光罩进行彩色色阻的制作。这两个光罩可以称为黑矩阵光罩和色阻光罩。黑矩阵光罩可以包括对位标记(即，第一标记、第二标记、第三标记和第四标记)的掩膜图样和镂空区域(即，第一镂空区域、第二镂空区域、第三镂空区域和第四镂空区域)的掩膜图样。色阻光罩可以包括对位标记、对位监测标记(第一色块、第二色块、第三色块和第四色块)和色阻(即，第一色阻、第二色阻、第三色阻和第四色阻)的掩膜图样。
在步骤S910中，在衬底基板上形成具有如图10所示的第一标记601、第二标记602、第三标记603、第四标记1001、如图11所示的第一镂空区域701、第二镂空区域702、第三镂空区域703和第四镂空区域1101的黑色矩阵层。
在步骤S920中，移动光罩，使如图10所示的光罩上的对位标记604与第一标记601对齐。这里所说的光罩为色阻光罩。色阻光罩上的对位标记604与第一标记601对齐，色阻光罩定位完成，转到步骤S930。
在步骤S930中，利用光罩在黑色矩阵层上形成如图12所示的第一色阻801和如图11所示的第一色块704，并根据第一色块704和第一镂空区域701的位置关系来核对第一色阻801的位置。
具体地，利用色阻光罩上的对位监测标记掩膜图样在黑色矩阵层上形成第一色块704。同时，利用色阻光罩上的色阻掩膜图样在黑色矩阵层上形成第一色阻801。
由于制作第一色块704和第一色阻801是在同一道光罩下进行的，那么可以通过检测第一色块704的位置误差来检测第一色阻801的位置。具体地，如图11所示，通过检测第一色块704是否位于第一镂空区域701的中心来核对第一色阻801的位置。如果第一色阻801的位置准确，则所形成的第一色块704恰位于第一镂空区域701的中心。
在步骤S940中，移动色阻光罩，使对位标记604与第二标记602对齐。色阻光罩上的对位标记604与第二标记602对齐，色阻光罩定位完成，转到步骤S950。
在步骤S950中，利用色阻光罩在黑色矩阵层上形成如图12所示的第二色阻802和如图10所示的第二色块705，并根据第二色块705和第二镂空区域702的位置关系来核对第二色阻802的位置。
具体地，利用色阻光罩上的对位监测标记掩膜图样在黑色矩阵层上形成第二色块705。同时，利用色阻光罩上的色阻掩膜图样在黑色矩阵层上形成第二色阻802。通过检 测第二色块705是否位于第二镂空区域702的中心来核对第二色阻802的位置。如果第二色阻802的位置准确，则所形成的第二色块705恰位于第二镂空区域702的中心。
在步骤S960中，移动色阻光罩，使对位标记604与第三标记603对齐。色阻光罩上的对位标记604与第三标记603对齐，色阻光罩定位完成，转到步骤S970。
在步骤S970中，利用色阻光罩在黑色矩阵层上形成如图12所示的第三色阻803和如图10所示的第三色块706，并根据第三色块706和第三镂空区域703的位置关系来核对第三色阻803的位置。
具体地，利用色阻光罩上的对位监测标记掩膜图样在黑色矩阵层上形成第三色块706。同时，利用色阻光罩上的色阻掩膜图样在黑色矩阵层上形成第三色阻803。通过检测第三色块706是否位于第三镂空区域703的中心来核对第三色阻803的位置。如果第三色阻803的位置准确，则所形成的第三色块706恰位于第三镂空区域703的中心。
在步骤S980中，移动色阻光罩，使对位标记604与第四标记1001对齐。色阻光罩上的对位标记604与第四标记1001对齐，色阻光罩定位完成，转到步骤S990。
在步骤S990中，利用色阻光罩在黑色矩阵层上形成如图12所示的第四色阻1201和第四色块1102，并根据第四色块1102和第四镂空区域1101的位置关系来核对第四色阻1201的位置。
具体地，利用色阻光罩上的对位监测标记掩膜图样在黑色矩阵层上形成第四色块1102。同时，利用色阻光罩上的色阻掩膜图样在黑色矩阵层上形成第四色阻1201。通过检测第四色块1102是否位于第四镂空区域1101的中心来核对第四色阻1201的位置。如果第四色阻1201的位置准确，则所形成的第四色块1102恰位于第四镂空区域1101的中心。
在本实施例中，第一标记601和第二标记602之间间隔第一距离。第一标记601和第三标记603之间间隔第二距离。第一标记601和第四标记1001之间间隔第三距离。第一镂空区域701和第二镂空区域702之间间隔第一距离。第一镂空区域701和第三镂空区域703之间间隔第二距离。第一镂空区域701和第四镂空区域1101之间间隔第三距离。重要地，第一距离、第二距离和第三距离被配置成使第一色块704、第二色块705、第三色块706和第四色块1102互不交叠。
在应用本实施例的方法制作彩色色阻时，由于在步骤S920、步骤S940、步骤S960和步骤S980中，依次移动色阻光罩使得对位标记604分别与第一标记601、第二标记602、第三标记603和第四标记1001对齐，因此理论上在步骤S930中形成的第一色块704与 在步骤S950中形成的第二色块705之间应间隔第一距离，在步骤S930中形成的第一色块704与和步骤S970中形成的第三色块706之间应间隔第二距离，在步骤S930中形成的第一色块704与和步骤S990中形成的第四色块1102之间应间隔第三距离。通过合理配置第一距离、第二距离和第三距离的大小，可以在保持色块大小不变的基础上有效避免第一色块704、第二色块705、第三色块706和第四色块1102的相互交叠。
本发明一优选的实施例给出了针对第一距离、第二距离和第三距离的配置方案。
具体地，第一距离H1满足：H1＝(4*n1+1)*P。其中，n1为满足n1≥1或n1≦-1的整数，P为子像素的宽度。第二距离H2满足：H2＝(4*n2+2)*P。其中，n2为满足n2≥0或n2≦-2的整数，P为子像素的宽度。第三距离H3满足H3＝(4*n3+3)*P。其中，n3为满足n3≥0或n3≦-2的整数，P为子像素的宽度。
需要说明的是，当n1为满足n1≥1的整数，n2为满足n2≥0的整数，且n3为满足n3≥0的整数时，色阻光罩右移。当n1为满足n1≦-1的整数，n2为满足n2≦-2的整数，且n3为满足n3≦-2的整数时，色阻光罩左移。
具体地，如图12所示，取n1＝1，n2＝2，n3＝3，可得H1＝5*P，H2＝10*P，H3＝15*P。也即，色阻光罩进行初始对位形成第一色阻801和第一色块704后，色阻光罩从初始位置向右移动至第二标记602处(相当于向右移动5个子像素的宽度)形成第二色阻802和第二色块705，从初始位置向右移动至第三标记603处(相当于向右移动10个子像素的宽度)形成第三色阻803和第三色块706，从初始位置向右移动至第四标记1001处(相当于向右移动15个子像素的宽度)形成第四色阻1201和第四色块1102。第一色块704与第二色块705间隔5个子像素的宽度，第一色块704与第三色块706间隔10个子像素的宽度，第一色块704与第四色块1102间隔15个子像素的宽度。第一色块704、第二色块705、第三色块706和第四色块1102互不交叠。
优选的，第一色阻801、第二色阻802、第三色阻803和第四色阻1201各不相同，并且分别为红色色阻、绿色色阻、蓝色色阻和白色色阻中的一种。例如，第一色阻801为红色色阻。第二色阻802为绿色色阻。第三色阻803为蓝色色阻。第四色阻1201为白色色阻。
优选的，第一色块704、第二色块705、第三色块706和第四色块1102位于子像素与子像素之间的位置。
应用本发明实施例提供的彩色色阻的制作方法，依次移动光罩使对位标记604分别与第一标记601、第二标记602、第三标记603和第四标记1001对齐，将利用光罩在黑色矩 阵层上形成对应第一标记601的第一色阻801和第一色块704、对应第二标记602的第二色阻802和第二色块705、对应第三标记603的第三色阻803和第三色块706、以及对应第四标记的第四色阻1201和第四色块1102。第一标记601和第二标记602之间间隔第一距离，第一标记601和第三标记603之间间隔第二距离，第一标记601和第四标记1001之间间隔第三距离。当第一距离、第二距离和第三距离被配置成使第一色块704、第二色块705、第三色块706和第四色块1102互不交叠时，能够在不改变色块大小的前提下使得各色块互不交叠，从而克服了现有技术中色块交叠以及存在色块剥落风险的缺陷。
虽然本发明所公开的实施方式如上，但所述的内容只是为了便于理解本发明而采用的实施方式，并非用以限定本发明。任何本发明所属技术领域内的技术人员，在不脱离本发明所公开的精神和范围的前提下，可以在实施的形式上及细节上作任何的修改与变化，但本发明的保护范围，仍须以所附的权利要求书所界定的范围为准。

Claims (20)

  1. 一种彩色色阻的制作方法，包括：
    在衬底基板上形成具有第一标记、第二标记、第三标记、第一镂空区域、第二镂空区域和第三镂空区域的黑色矩阵层；
    移动光罩，使所述光罩上的对位标记与所述第一标记对齐；利用所述光罩在所述黑色矩阵层上形成第一色阻和第一色块，并根据所述第一色块和所述第一镂空区域的位置关系来核对所述第一色阻的位置；
    移动所述光罩，使所述对位标记与所述第二标记对齐；利用所述光罩在所述黑色矩阵层上形成第二色阻和第二色块，并根据所述第二色块和所述第二镂空区域的位置关系来核对所述第二色阻的位置；
    移动所述光罩，使所述对位标记与所述第三标记对齐；利用所述光罩在所述黑色矩阵层上形成第三色阻和第三色块，并根据所述第三色块和所述第三镂空区域的位置关系来核对所述第三色阻的位置；
    其中，所述第一标记/第一镂空区域和所述第二标记/第二镂空区域之间间隔第一距离，所述第一标记/第一镂空区域和所述第三标记/第三镂空区域之间间隔第二距离；所述第一距离和第二距离被配置成使所述第一色块、第二色块和第三色块互不交叠。
  2. 根据权利要求1所述的方法，其中，
    所述第一距离H1满足：H1＝(3*n1+1)*P；其中，n1为满足n1≥1或n1≦-1的整数，P为子像素的宽度；
    所述第二距离H2满足：H2＝(3*n2+2)*P；其中，n2为满足n2≥0或n2≦-2的整数。
  3. 根据权利要求2所述的方法，其中，所述第一标记、第二标记、第三标记、第一镂空区域、第二镂空区域和第三镂空区域利用同一光罩同步形成。
  4. 根据权利要求1所述的方法，其中，所述第一色阻、第二色阻和第三色阻各不相同，并且分别为红色色阻、绿色色阻和蓝色色阻中的一种。
  5. 根据权利要求2所述的方法，其中，所述第一色阻、第二色阻和第三色阻各不相同，并且分别为红色色阻、绿色色阻和蓝色色阻中的一种。
  6. 根据权利要求3所述的方法，其中，所述第一色阻、第二色阻和第三色阻各不相同，并且分别为红色色阻、绿色色阻和蓝色色阻中的一种。
  7. 根据权利要求4所述的方法，其中，所述第一色块、第二色块和第三色块位于子 像素与子像素之间的位置。
  8. 根据权利要求5所述的方法，其中，所述第一色块、第二色块和第三色块位于子像素与子像素之间的位置。
  9. 根据权利要求6所述的方法，其中，所述第一色块、第二色块和第三色块位于子像素与子像素之间的位置。
  10. 根据权利要求4所述的方法，其中，所述第一标记、第二标记和第三标记位于非显示区。
  11. 根据权利要求5所述的方法，其中，所述第一标记、第二标记和第三标记位于非显示区。
  12. 根据权利要求6所述的方法，其中，所述第一标记、第二标记和第三标记位于非显示区。
  13. 根据权利要求1所述的方法，其中，还包括：
    在形成所述黑色矩阵层时，还使所述黑色矩阵层具有第四标记和第四镂空区域；
    移动所述光罩，使所述光罩上的对位标记与所述第四标记对齐；利用所述光罩在所述黑色矩阵层上形成第四色阻和第四色块，并根据所述第四色块和所述第四镂空区域的位置关系来核对所述第四色阻的位置；
    其中，所述第一标记/第一镂空区域和所述第四标记/第四镂空区域之间间隔第三距离；所述第一距离、第二距离和第三距离被配置成使所述第一色块、第二色块、第三色块和第四色块互不交叠。
  14. 根据权利要求13所述的方法，其中，
    所述第一距离H1满足：H1＝(4*n1+1)*P；其中，n1为满足n1≥1或n1≦-1的整数，P为子像素的宽度；
    所述第二距离H2满足：H2＝(4*n2+2)*P；其中，n2为满足n2≥0或n2≦-2的整数；
    所述第三距离H3满足H3＝(4*n3+3)*P；其中，n3为满足n3≥0或n3≦-2的整数。
  15. 根据权利要求13所述的方法，其中，所述第一色阻、第二色阻、第三色阻和第四色阻各不相同，并且分别为红色色阻、绿色色阻、蓝色色阻和白色色阻中的一种。
  16. 根据权利要求14所述的方法，其中，所述第一色阻、第二色阻、第三色阻和第四色阻各不相同，并且分别为红色色阻、绿色色阻、蓝色色阻和白色色阻中的一种。
  17. 根据权利要求13所述的方法，其中，所述第一色块、第二色块、第三色块和第四色块位于子像素与子像素之间的位置。
  18. 根据权利要求14所述的方法，其中，所述第一色块、第二色块、第三色块和第四色块位于子像素与子像素之间的位置。
  19. 根据权利要求15所述的方法，其中，所述第一色块、第二色块、第三色块和第四色块位于子像素与子像素之间的位置。
  20. 根据权利要求16所述的方法，其中，所述第一色块、第二色块、第三色块和第四色块位于子像素与子像素之间的位置。
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