WO2018180524A1 - Élément laser à semi-conducteur au nitrure et dispositif laser à semi-conducteur au nitrure - Google Patents

Élément laser à semi-conducteur au nitrure et dispositif laser à semi-conducteur au nitrure Download PDF

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Publication number
WO2018180524A1
WO2018180524A1 PCT/JP2018/010129 JP2018010129W WO2018180524A1 WO 2018180524 A1 WO2018180524 A1 WO 2018180524A1 JP 2018010129 W JP2018010129 W JP 2018010129W WO 2018180524 A1 WO2018180524 A1 WO 2018180524A1
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Prior art keywords
nitride semiconductor
layer
semiconductor laser
laser element
electrode
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PCT/JP2018/010129
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English (en)
Japanese (ja)
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裕幸 萩野
修 今藤
信一郎 能崎
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パナソニック株式会社
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Priority to JP2019509239A priority Critical patent/JPWO2018180524A1/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0239—Combinations of electrical or optical elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser

Definitions

  • the present disclosure relates to a nitride semiconductor laser element and a nitride semiconductor laser device mounted with the nitride semiconductor laser element.
  • semiconductor laser elements have been used in light sources for image display devices such as displays and projectors, light sources for in-vehicle headlamps, light sources for industrial lighting and consumer lighting, or industries such as laser welding equipment, thin film annealing equipment, and laser processing equipment. It attracts attention as a light source for various uses such as a light source of equipment.
  • nitride semiconductor laser elements capable of covering the wavelength band from ultraviolet to blue have been actively developed.
  • a semiconductor laser device used as a light source for the above applications is desired to have a high output with a light output greatly exceeding 1 watt and a long life of tens of thousands of hours.
  • Patent Document 1 discloses a conventional nitride semiconductor laser element.
  • FIG. 6 is a cross-sectional view of a conventional nitride semiconductor laser device disclosed in Patent Document 1. In FIG.
  • an n-type nitride semiconductor layer 1020, an active layer 1030, and a p-type nitride semiconductor layer 1040 are sequentially stacked on a substrate 1010. Structure.
  • a ridge stripe 1040a and a flat portion 1040b are formed in the p-type nitride semiconductor layer 1040.
  • An insulating film 1060 made of SiO 2 is formed from the side surface of the ridge stripe 1040a to the flat portion 1040b.
  • a p-side electrode 1051 is formed on the ridge stripe 1040a of the p-type nitride semiconductor layer 1040, and a pad electrode 1052 made of gold (Au) is formed on the p-side electrode 1051 and the insulating film 1060. Note that an n-side electrode 1080 is formed on the back surface of the substrate 1010.
  • the pad electrode made of Au has low adhesion to the insulating film made of SiO 2, there is a problem that the electrode is peeled off when the semiconductor laser element is mounted or when the laser is driven.
  • Patent Document 2 discloses a nitride semiconductor laser element with improved adhesion between an electrode and an insulating film.
  • FIG. 7 is a cross-sectional view of a conventional nitride semiconductor laser device disclosed in Patent Document 2. In FIG.
  • an adhesion layer 2070 made of Ti or the like is formed on the surface of the insulating film 2060 formed on the side surface of the ridge portion 2040a of the p-type semiconductor layer 2040.
  • the ridge portion 2040 a is covered with a p-type electrode 2051 through 2070. Accordingly, the adhesion between the insulating film 2060 and the p-type electrode 2051 can be improved, and peeling of the p-type electrode 2051 from the insulating film 2060 can be suppressed.
  • Non-Patent Document 1 discloses the diffusion rate of hydrogen in a metal.
  • This disclosure is intended to provide a nitride semiconductor laser element or the like that can suppress an increase in operating voltage.
  • an aspect of the nitride semiconductor laser device includes a first nitride semiconductor layer and a nitride semiconductor formed on the first nitride semiconductor layer.
  • the second nitride semiconductor layer has a flat portion on the side of the ridge portion, and the side surface of the ridge portion and the flat portion have SiO 2 on the side of the ridge portion.
  • the adhesion layer formed on the dielectric layer is not in contact with the ohmic electrode, so that hydrogen contained in the dielectric layer made of SiO 2 can be prevented from diffusing into the ohmic electrode. Thereby, it can suppress that an operating voltage raises with progress of energization time. Furthermore, since the adhesion layer formed on the dielectric layer is in contact with the pad electrode, the adhesion between the pad electrode and the dielectric layer is improved, so that the nitride semiconductor laser element can be mounted or can be driven (operated). Peeling of the pad electrode can be suppressed.
  • a distance between the adhesion layer and the ohmic electrode is preferably 0.6 ⁇ m or more and 3.0 ⁇ m or less.
  • the pad electrode may be in contact with the dielectric layer.
  • the width of the ridge portion may be 10 ⁇ m or more and 50 ⁇ m or less.
  • the adhesion layer includes a layer including a layer having at least one of Ti and Ni.
  • the pad electrode including an Au layer is suitable.
  • the nitride semiconductor laser element and a submount that holds the nitride semiconductor laser element are provided.
  • heat generated when the nitride semiconductor laser element is driven can be released to, for example, a submount on which the nitride semiconductor laser element is mounted, so that the nitride semiconductor laser element can be operated with high light output. it can.
  • the nitride semiconductor laser element has the first nitride semiconductor layer side bonded to the submount and a wire connected to the pad electrode. Good.
  • the nitride semiconductor laser device can be easily electrically connected by, for example, an external power source and wire bonding.
  • the nitride semiconductor laser element is bonded to the submount on the pad electrode side, and a solder layer is provided between the pad electrode and the submount. It is good to intervene.
  • the submount is located near the light emitting portion of the nitride semiconductor laser element, the heat from the light emitting portion is radiated more efficiently than the submount, and the heat dissipation characteristics are improved.
  • the pad electrode may include at least a layer made of Au in contact with the solder layer, and the solder layer may include Sn.
  • nitride semiconductor laser element and the like of the present disclosure it is possible to suppress an increase in operating voltage.
  • FIG. 1A is a plan view showing a configuration of a nitride semiconductor laser element according to an embodiment.
  • FIG. 1B is a cross-sectional view showing the configuration of the nitride semiconductor laser device according to the embodiment taken along line IB-IB in FIG. 1A.
  • FIG. 2A is a cross-sectional view showing a process of forming each of the first nitride semiconductor layer, the light emitting layer, and the second nitride semiconductor layer in the method for manufacturing the nitride semiconductor laser element according to the embodiment.
  • FIG. 2B is a cross-sectional view showing a step of forming a protective film in the method for manufacturing the nitride semiconductor laser element according to the embodiment.
  • FIG. 1A is a plan view showing a configuration of a nitride semiconductor laser element according to an embodiment.
  • FIG. 1B is a cross-sectional view showing the configuration of the nitride semiconductor laser device according to the embodiment taken along line IB-
  • FIG. 2C is a cross-sectional view showing the step of patterning the protective film in the method for manufacturing the nitride semiconductor laser element according to the embodiment.
  • FIG. 2D is a cross-sectional view showing a step of forming the ridge portion and the flat portion in the method for manufacturing the nitride semiconductor laser element according to the embodiment.
  • FIG. 2E is a cross-sectional view showing the step of forming a dielectric layer in the method for manufacturing the nitride semiconductor laser element according to the embodiment.
  • FIG. 2F is a cross-sectional view showing the step of forming the p-side electrode in the method for manufacturing the nitride semiconductor laser element according to the embodiment.
  • FIG. 2G is a cross-sectional view showing the step of forming the adhesion layer in the method for manufacturing the nitride semiconductor laser element according to the embodiment.
  • FIG. 2H is a cross-sectional view showing a step of forming a pad electrode in the method for manufacturing a nitride semiconductor laser element according to the embodiment.
  • FIG. 2I is a cross-sectional view showing the step of forming the n-side electrode in the method for manufacturing the nitride semiconductor laser element according to the embodiment.
  • FIG. 3A is a plan view for explaining the mounting form 1 of the nitride semiconductor laser element according to the embodiment.
  • FIG. 3B is a cross-sectional view for explaining the mounting form 1 of the nitride semiconductor laser device according to the embodiment along the line IIIB-IIIB in FIG. 3A.
  • FIG. 4A is a diagram for explaining a mounting form 2 of the nitride semiconductor laser element according to the embodiment.
  • FIG. 4B is a cross-sectional view for explaining the mounting form 2 of the nitride semiconductor laser device according to the embodiment taken along the line IVB-IVB in FIG. 4A.
  • FIG. 5A is a cross-sectional view of a laser structure schematically showing a nitride semiconductor laser element of a comparative example.
  • FIG. 5B is a cross-sectional view of a laser structure schematically showing the nitride semiconductor laser element according to the embodiment.
  • FIG. 5C is a diagram showing a change with time of the operating voltage of the laser structure in the comparative example and the embodiment.
  • FIG. 5D is a diagram illustrating a calculation result of a change over time in the hydrogen concentration calculated using the diffusion equation of the laser structure in the comparative example and the embodiment.
  • FIG. 6 is a cross-sectional view of a conventional nitride semiconductor laser device.
  • FIG. 7 is a cross-sectional view of a conventional nitride semiconductor laser device.
  • the X axis, the Y axis, and the Z axis represent the three axes of the three-dimensional orthogonal coordinate system.
  • the X axis and the Y axis are orthogonal to each other and both are orthogonal to the Z axis.
  • the Z-axis positive direction side may be described as the upper side, and the Z-axis negative direction side as the lower side.
  • 1A, 3A, and 4A are not cross-sectional views, but are shown with hatching for explanation.
  • FIG. 1A is a plan view showing a configuration of a nitride semiconductor laser device 1 according to an embodiment.
  • 1B is a cross-sectional view of nitride semiconductor laser device 1 taken along line IB-IB in FIG. 1A.
  • nitride semiconductor laser element 1 is a semiconductor laser element made of a nitride semiconductor material.
  • the nitride semiconductor laser device 1 includes a substrate 10, a first nitride semiconductor layer 20, a light emitting layer 30, a second nitride semiconductor layer 40, an electrode member 50, a dielectric layer 60, and an adhesion layer. 70.
  • the second nitride semiconductor layer 40 includes a striped ridge portion 40a extending in the laser resonator length direction (Y-axis direction) and a flat portion 40b extending in the lateral direction (X-axis direction) from the root of the ridge portion 40a. And have.
  • the width and height of the ridge portion 40a are not particularly limited.
  • the width (stripe width) of the ridge portion 40a is 1 ⁇ m to 100 ⁇ m, and the height of the ridge portion 40a is 100 nm to 1 ⁇ m. is there.
  • the width of the ridge portion 40a is preferably 10 ⁇ m or more and 50 ⁇ m or less, and the height of the ridge portion 40a is preferably 300 nm or more and 800 nm or less.
  • the substrate 10 is, for example, a GaN substrate.
  • an n-type hexagonal GaN substrate whose main surface is a (0001) plane is used as the substrate 10.
  • the first nitride semiconductor layer 20 is formed on the substrate 10.
  • the first nitride semiconductor layer 20 is an n-side cladding layer made of n-type AlGaN, for example.
  • the light emitting layer 30 is formed on the first nitride semiconductor layer 20.
  • the light emitting layer 30 is made of a nitride semiconductor.
  • the light emitting layer 30 has, for example, a stacked structure of an n-side light guide layer 31 made of n-GaN, an active layer 32 made of an InGaN quantum well layer, and a p-side light guide layer 33 made of p-GaN.
  • the second nitride semiconductor layer 40 is formed on the light emitting layer 30.
  • the second nitride semiconductor layer 40 has, for example, a stacked structure of an electron barrier layer 41 made of AlGaN, a p-side cladding layer 42 made of a p-type AlGaN layer, and a p-side contact layer 43 made of p-type GaN. .
  • the p-side contact layer 43 is formed as the uppermost layer of the ridge portion 40a.
  • the p-side cladding layer 42 has a convex portion.
  • the convex portion of the p-side cladding layer 42 and the p-side contact layer 43 constitute a ridge portion 40a.
  • the p-side cladding layer 42 has a flat portion as a flat portion 40b on both sides of the ridge portion 40a. That is, the uppermost surface of the flat portion 40b is the surface of the p-side cladding layer 42, and the p-side contact layer 43 is not formed on the uppermost surface of the flat portion 40b.
  • the electrode member 50 is formed on the second nitride semiconductor layer 40.
  • the electrode member 50 is wider than the ridge portion 40a. That is, the width of the electrode member 50 (width in the X-axis direction) is larger than the width of the ridge portion 40a (width in the X-axis direction).
  • the electrode member 50 is in contact with the upper surface of the dielectric layer 60, the adhesion layer 70, and the ridge portion 40a.
  • the electrode member 50 includes a p-side electrode (ohmic electrode) 51 for supplying current and a pad electrode 52 formed on the p-side electrode 51.
  • the p-side electrode 51 is in contact with the upper surface of the ridge portion 40a.
  • the p-side electrode 51 is an ohmic electrode that is in ohmic contact with the p-side contact layer 43 above the ridge portion 40a, and is in contact with the upper surface of the p-side contact layer 43 that is the upper surface of the ridge portion 40a.
  • the p-side electrode 51 is formed using a metal material such as Pd, Pt, or Ni, for example. In the present embodiment, the p-side electrode 51 has a Pd / Pt two-layer structure.
  • the pad electrode 52 is wider than the ridge portion 40 a and is in contact with the dielectric layer 60 and the adhesion layer 70. That is, the pad electrode 52 is formed so as to cover the ridge portion 40a, the dielectric layer 60, and the adhesion layer 70.
  • the material of the pad electrode 52 may be a metal material made of Au, and the pad electrode 52 may be a single layer of Au or a multilayer of Au / Ti / Au.
  • the adhesion layer 70 is formed in a part of the region on the dielectric layer 60, specifically, on both sides of the ridge portion 40a, in a region on the dielectric layer 60 away from the ridge portion 40a.
  • the adhesion layer 70 is in contact with the pad electrode 52 and the dielectric layer 60, but not in contact with the p-side electrode 51.
  • the adhesion layer 70 is in contact with the dielectric layer 60 at a position away from the ridge portion 40a on the flat portion 40b.
  • the distances between the left and right adhesion layers 70 and the p-side electrode 51 with respect to the ridge portion 40a are defined as distances d1 and d2, respectively.
  • Non-Patent Document 1 the diffusion distance of hydrogen in a metal can be calculated from Fick's second law.
  • the expression (2) (specifically, the expression (1) shown below) described in Non-Patent Document 1 is called a diffusion equation.
  • FIG. 5D From the experimental results shown in FIG. 5D, it was found that if the distances d1 and d2 are 0.6 ⁇ m or more, the nitride semiconductor laser device 1 can suppress hydrogen diffusion during operation.
  • D is the diffusion coefficient
  • C (x, t) is the hydrogen concentration distribution inside the sample
  • x is the distance from the anode side inside the sample.
  • T is time.
  • the adhesiveness between the pad electrode 52 and the dielectric layer 60 can be secured if the distances d1 and d2 are 3.0 ⁇ m or less.
  • the adhesion layer 70 is separated from the portion formed on the side surface of the ridge portion 40a of the dielectric layer 60 on the flat portion 40b.
  • the dielectric layer 60 is formed at a position through a portion formed on the flat portion 40b. In the vicinity of the ridge portion 40a on the flat portion 40b, there is a portion on the dielectric layer 60 where the adhesion layer 70 is not formed.
  • the pad electrode 52 and the dielectric layer 60 are in direct contact between the adhesion layer 70 and the ridge portion 40a.
  • the distance between the adhesion layer 70 and the p-side electrode 51 a configuration in which the distance is in the height direction (specifically, the Z-axis direction) of the ridge portion 40a is conceivable, but in the case of the nitride semiconductor laser element 1, Since the ridge portion 40a is formed of the p-side cladding layer 42 having a high electric resistance, there is a problem that the operating voltage increases when the ridge portion 40a is increased. For this reason, there is a limit to the distance between the adhesion layer 70, the p-side electrode 51, and the Z-axis direction.
  • the adhesion layer 70 and the p-side electrode 51 can be separated in the Z-axis direction by making the dielectric layer 60 thinner.
  • the distance between the light emitting portion (specifically, the light emitting layer 30) and the electrode portion (specifically, the p-side electrode 51) is shortened, the light from the electrode portion (for example, the p-side electrode 51). Absorption occurs, causing a problem that utilization efficiency (that is, light emission efficiency) of light emitted from the nitride semiconductor laser element 1 is lowered. Therefore, when the distance between the adhesion layer 70 and the p-side electrode 51 is increased, it is effective to increase the distance in the width direction (specifically, the X-axis direction) of the ridge portion 40a. 70 is formed away from the ridge portion 40a.
  • distance d1 distance d2 is set, but distance d1 and distance d2 may be different. Further, even if either one of the distances d1 and d2 is in the range of 0.6 ⁇ m or more and 3.0 ⁇ m or less, the increase of the operating voltage of the nitride semiconductor laser device 1 due to hydrogen diffusion is suppressed, and the pad electrode Although the effect of ensuring the adhesion between 52 and the dielectric layer 60 is obtained, it is more preferable that the distances d1 and d2 are both in the range of 0.6 ⁇ m or more and 3.0 ⁇ m or less.
  • the material of the adhesion layer 70 is not particularly limited, but may include a layer having at least one of Ti and Ni.
  • the adhesion layer 70 is a metal material having a two-layer structure of Ti or Ti / Pt.
  • the p-side electrode 51 is a metal material made of Ti.
  • the pad electrode 52 is formed inside the second nitride semiconductor layer 40 in order to improve the yield when the nitride semiconductor laser device 1 is separated. That is, when the nitride semiconductor laser element 1 is viewed from above, the pad electrode 52 is not formed on the peripheral edge of the nitride semiconductor laser element 1. That is, the nitride semiconductor laser device 1 has a non-current injection region where no current is supplied to the periphery of the end portion. Further, the cross-sectional shape of the region where the pad electrode 52 is formed has the structure shown in FIG.
  • the dielectric layer 60 is an insulating film made of SiO 2 formed on the side surface of the ridge portion 40a in order to confine light. Specifically, the dielectric layer 60 is continuously formed from the side surface of the ridge portion 40a to the flat portion 40b. In the present embodiment, the dielectric layer 60 is continuously formed around the side surface of the p-side contact layer 43, the side surface of the convex portion of the p-side cladding layer 42, and the upper surface of the p-side cladding layer 42 around the ridge portion 40a. Is formed.
  • the shape of the dielectric layer 60 is not particularly limited, but the dielectric layer 60 may be in contact with the side surface of the ridge portion 40a and the flat portion 40b. Thereby, the light emitted immediately below the ridge 40a can be stably confined.
  • an end face coating film such as a dielectric multilayer film is formed on the light emitting end face.
  • This end face coat film is difficult to be formed only on the end face, and also goes around the upper surface of the nitride semiconductor laser device 1.
  • the pad electrode 52 is not formed at the end portion in the longitudinal direction (Y-axis direction) of the nitride semiconductor laser element 1, the nitride semiconductor laser element is formed when the end face coat film wraps up to the upper surface.
  • the dielectric layer 60 and the end face coat film may be in contact with each other at the end in the longitudinal direction of 1.
  • the film thickness of the dielectric layer 60 is preferably 100 nm or more.
  • the thickness of the dielectric layer 60 is preferably set to be equal to or less than the height of the ridge portion 40a.
  • etching damage may remain in the side surface of the ridge portion 40a and the flat portion 40b in the etching process when the ridge portion 40a is formed, and a leak current may be generated.
  • etching damage may remain in the side surface of the ridge portion 40a and the flat portion 40b in the etching process when the ridge portion 40a is formed, and a leak current may be generated.
  • an n-side electrode 80 is formed on the lower surface of the substrate 10 as an ohmic electrode in ohmic contact with the substrate 10.
  • FIGS. 2A to 2I are cross-sectional views of each step in the method for manufacturing nitride semiconductor laser device 1 according to the embodiment.
  • 2A to 2I are cross sections at positions corresponding to the line IB-IB in FIG. 1A.
  • a substrate 10 that is an n-type hexagonal GaN substrate having a (0001) plane as a main surface
  • MOCVD metal organic chemical vapor deposition
  • an n-side cladding layer made of n-type AlGaN is grown as a first nitride semiconductor layer 20 on the substrate 10 by 3 ⁇ m.
  • an n-side light guide layer 31 made of n-GaN is grown by 0.1 ⁇ m.
  • an active layer 32 having three periods of a barrier layer made of InGaN and an InGaN quantum well layer is grown.
  • a p-side light guide layer 33 made of p-GaN is grown by 0.1 ⁇ m.
  • an electron barrier layer 41 made of AlGaN is grown by 10 nm.
  • a p-side cladding layer 42 made of a 0.48 ⁇ m strained superlattice formed by repeating 160 cycles of a p-AlGaN layer (1.5 nm) and a GaN layer (1.5 nm) is grown.
  • a p-side contact layer 43 made of p-GaN is grown by 0.05 ⁇ m.
  • TMG trimethylgallium
  • TMA trimethylammonium
  • TMI trimethylindium
  • ammonia NH 3
  • a protective film 91 is formed on the second nitride semiconductor layer 40. Specifically, a 300 nm thick silicon oxide film (SiO 2 ) is formed as the protective film 91 on the p-side contact layer 43 by plasma CVD (Chemical Vapor Deposition) using silane (SiH 4 ).
  • the method for forming the protective film 91 is not limited to the plasma CVD method.
  • a known film formation method such as a thermal CVD method, a sputtering method, a vacuum evaporation method, or a pulsed laser film formation method is used. Can do.
  • the material for forming the protective film 91 is not limited to the above, and for example, a second nitride semiconductor layer 40 (a p-side cladding layer 42, a p-side contact layer 43, which will be described later) such as a dielectric or a metal. Any material may be used as long as it is selective with respect to the etching.
  • the protective film 91 is selectively removed using a photolithography method and an etching method so that the protective film 91 remains in a stripe shape.
  • an etching method for example, dry etching by reactive ion etching (RIE) using a fluorine-based gas such as CF 4 or wet etching such as hydrofluoric acid (HF) diluted to about 1:10 is used. be able to.
  • the p-side contact layer 43 and the p-side cladding layer 42 are etched using the protective film 91 formed in a stripe shape as a mask, thereby forming a ridge on the second nitride semiconductor layer 40.
  • the part 40a and the flat part 40b are formed.
  • dry etching by RIE using a chlorine-based gas such as Cl 2 may be used.
  • the dielectric layer 60 is formed so as to cover the p-side contact layer 43 and the p-side cladding layer 42. Film. That is, the dielectric layer 60 is formed on the ridge portion 40a and the flat portion 40b.
  • a silicon oxide film (SiO 2 ) having a thickness of 300 nm is formed by a plasma CVD method using silane (SiH 4 ).
  • the film formation method of the dielectric layer 60 is not limited to the plasma CVD method, and a film formation method such as a thermal CVD method, a sputtering method, a vacuum deposition method, or a pulse laser film formation method may be used.
  • the p-side electrode 51 made of Pd / Pt is formed only on the ridge portion 40a by using a vacuum deposition method and a lift-off method. Specifically, the p-side electrode 51 is formed on the p-side contact layer 43 exposed from the dielectric layer 60.
  • the film formation method of the p-side electrode 51 is not limited to the vacuum evaporation method, and may be a sputtering method or a pulse laser film formation method.
  • the electrode material of the p-side electrode 51 may be any material that is in ohmic contact with the second nitride semiconductor layer 40 (p-side contact layer 43), such as Ni / Au or Pt.
  • an adhesion layer 70 made of Ti is formed on the dielectric layer 60 by using a photolithography method, a vacuum deposition method, and a lift-off method.
  • the method for forming the adhesion layer 70 is not limited to the vacuum evaporation method, and may be a sputtering method or a pulse laser film formation method.
  • the material of the adhesion layer 70 may be any material that improves the adhesion to the dielectric layer 60, such as Ni.
  • a pad electrode 52 is formed so as to cover the p-side electrode 51, the dielectric layer 60, and the adhesion layer. Specifically, a resist is patterned on a portion other than a portion to be formed by a photolithography method or the like, a pad electrode 52 made of Au is formed on the entire upper surface of the substrate 10 by a vacuum deposition method or the like, and unnecessary using a lift-off method. By removing the portion of the electrode, a pad electrode 52 having a predetermined shape is formed on the p-side electrode 51, the dielectric layer 60 and the adhesion layer 70. Thereby, the electrode member 50 including the p-side electrode 51 and the pad electrode 52 is formed.
  • an n-side electrode 80 is formed on the lower surface of the substrate 10. Specifically, an n-side electrode 80 made of Ti / Pt / Au is formed on the back surface of the substrate 10 by vacuum vapor deposition or the like, and patterned using a photolithography method and an etching method, whereby an n-side electrode having a predetermined shape is formed. 80 is formed. Thereby, nitride semiconductor laser device 1 according to the present embodiment can be manufactured.
  • FIG. 3A is a diagram for explaining a mounting form 1 of the nitride semiconductor laser element 1 according to the embodiment.
  • 3B is a cross-sectional view of the mounting form 1 of the nitride semiconductor laser element 1 taken along the line IIIB-IIIB in FIG. 3A.
  • the nitride semiconductor laser device 200 includes a nitride semiconductor laser element 1 and a submount 100. Specifically, the nitride semiconductor laser element 1 is held (mounted) on the submount 100.
  • the submount 100 is a mounting substrate on which the nitride semiconductor laser element 1 is mounted.
  • the submount 100 includes a base 101, a first electrode 102a, a second electrode 102b, a first solder layer 103a, and a second solder layer 103b.
  • the base 101 is a substrate that supports the nitride semiconductor laser element 1.
  • the material of the base 101 is not particularly limited, but ceramics such as aluminum nitride (AlN) and silicon carbide (SiC), diamond (C) formed by CVD, and metals such as Cu and Al It is preferable that the thermal conductivity is equal to or higher than that of the nitride semiconductor laser element 1 such as a single substance or an alloy such as CuW.
  • the first electrode 102 a is formed on one surface of the base 101.
  • the second electrode 102b is formed on the other surface of the base 101.
  • the first electrode 102a and the second electrode 102b are, for example, laminated films made of a metal material of Ti (0.1 ⁇ m), Pt (0.2 ⁇ m), and Au (0.2 ⁇ m).
  • the first solder layer 103a is formed on the first electrode 102a.
  • the second solder layer 103b is formed on the second electrode 102b.
  • the first solder layer 103a and the second solder layer 103b are eutectic solder made of an Sn—Au (gold tin) alloy made of, for example, Au (70%) and Sn (30%).
  • the nitride semiconductor laser element 1 is mounted on the submount 100.
  • the nitride semiconductor laser element 1 has the first nitride semiconductor layer 20 side bonded to the submount 100. More specifically, the n-side electrode 80 of the nitride semiconductor laser device 1 is connected to the submount 100 since the n-side of the nitride semiconductor laser device 1 is connected to the submount 100, that is, junction-up mounting. Connected to the solder layer 103a.
  • the wire 110 formed of a metal material is connected to each of the pad electrode 52 of the nitride semiconductor laser element 1 and the first electrode 102a of the submount 100 by wire bonding. Thereby, a current can be supplied to the nitride semiconductor laser device 1 by the wire 110.
  • the submount 100 may be mounted on a metal package such as a CAN package, for the purpose of improving heat dissipation and simplifying handling.
  • the mounting form 1 As described above, in the mounting form 1, the case where the nitride semiconductor laser element 1 is junction-up mounted has been described. However, the mounting form in which the p-side electrode of the nitride semiconductor laser element 1 is connected to the submount 100, that is, Junction down implementation may be applied. In the mounting mode 2, a case where the nitride semiconductor laser element 1 is mounted by junction down will be described.
  • FIG. 4A is a plan view for explaining a mounting form 2 (nitride semiconductor laser device 200a) of the nitride semiconductor laser element 1 according to the embodiment.
  • 4B is a cross-sectional view of the mounting form 2 of the nitride semiconductor laser element 1 taken along the line IVB-IVB in FIG. 4A.
  • the nitride semiconductor laser device 200a includes the nitride semiconductor laser element 1 and the submount 100 as in the first embodiment. Specifically, the nitride semiconductor laser element 1 is mounted on the submount 100. In addition, the nitride semiconductor laser device 200 a includes a first solder layer (solder layer) 103 a that joins the nitride semiconductor laser element 1 and the submount 100.
  • solder layer solder layer
  • the nitride semiconductor laser device 1 is bonded to the submount 100 on the pad electrode 52 side.
  • the first solder layer 103 a is located between the pad electrode 52 and the submount 100.
  • the electrode member 50 of the nitride semiconductor laser element 1 is connected to the first solder layer 103 a of the submount 100.
  • the pad electrode 52 made of Au and the first solder layer 103a made of Sn—Au (gold tin) are connected, the Sn (tin) in the first solder layer 103a is padded. It diffuses into the electrode 52 and forms a Sn—Au (gold tin) eutectic structure over the first solder layer 103 a and the pad electrode 52. Even in this configuration, since hydrogen diffusion is suppressed, an increase in operating voltage during laser oscillation is suppressed. That is, the pad electrode 52 preferably includes at least a layer made of Au in contact with the first solder layer 103a. Further, the first solder layer 103a may contain Sn.
  • a gold-tin alloy is shown as the material of the solder layer, but a material used for known semiconductor bonding, such as Sn—Ag solder or Sn—Cu solder, may be used.
  • FIG. 5A is a cross-sectional view of a laser structure 1000X schematically showing a nitride semiconductor laser element of a comparative example.
  • FIG. 5B is a cross-sectional view of a laser structure 1X schematically showing the nitride semiconductor laser element 1 according to the embodiment.
  • FIG. 5C is a diagram showing a change over time of the operating voltage of the laser structure 1000X of the comparative example and the laser structure 1X of the nitride semiconductor laser element 1 according to the embodiment.
  • dielectric materials widely used in semiconductor devices include those shown in Table 1 below.
  • SiO 2 has the lowest refractive index and is transparent to light. For this reason, SiO 2 is useful as an insulating film of a semiconductor laser element.
  • FIGS. 5A and 5B laser structures 1000X and 1X simulating nitride semiconductor laser elements were actually fabricated and energization experiments were performed.
  • a laser structure (laser structure of a comparative example) 1000X schematically showing a nitride semiconductor laser element of a comparative example includes a substrate 10 made of a GaN substrate and a first made of an n-side AlGaN cladding layer.
  • 2 nitride semiconductor layers 40 are examples of the semiconductor layers 40.
  • the second nitride semiconductor layer 40 includes a ridge portion 40a and a flat portion 40b extending in the lateral direction from the root of the ridge portion 40a.
  • a dielectric layer 60 made of SiO 2 is laminated on the ridge portion 40a and the flat portion 40b.
  • the dielectric layer 60 has an opening, and a p-side electrode 51 made of Pd / Pt is formed in the opening.
  • an adhesion layer 70 made of Ti is formed so as to cover the p-side electrode 51 and the dielectric layer 60.
  • a pad electrode 52 made of Au is formed on the adhesion layer 70.
  • An n-side electrode 80 is formed on the lower surface of the substrate 10.
  • a laser structure (laser structure of the embodiment) 1X schematically showing the nitride semiconductor laser element 1 according to the embodiment is a GaN substrate, similarly to the laser structure 1000X of the comparative example.
  • a substrate 10 comprising: a first nitride semiconductor layer 20 comprising an n-side AlGaN cladding layer; a light-emitting layer 30 comprising an n-side GaN light guide layer, an InGaN active layer and a p-side GaN light guide layer; and an AlGaN electron barrier.
  • the second nitride semiconductor layer 40 includes a ridge portion 40a and a flat portion 40b extending in the lateral direction from the root of the ridge portion 40a.
  • a dielectric layer 60 made of SiO 2 is laminated on the ridge portion 40a and the flat portion 40b.
  • the dielectric layer 60 has an opening, and a p-side electrode 51 made of Pd / Pt is formed in the opening.
  • the adhesion layer 70 made of Ti is formed only on the dielectric layer 60, and the adhesion layer 70 and the p-side electrode 51 are in contact with each other. Not done.
  • a pad electrode 52 made of Au is formed so as to cover the p-side electrode 51, the dielectric layer 60 and the adhesion layer 70.
  • the operating voltage gradually increased as the energization time passed, and the operating voltage increased rapidly when the energization time exceeded 200 hours.
  • the operating voltage does not increase substantially even after a long time, and it is understood that the increase in operating voltage is significantly suppressed as compared with the laser structure 1000X of the comparative example. It was.
  • SiO 2 is a material containing a large amount of hydrogen. Therefore, in the laser structure 1000X of the comparative example, hydrogen contained in the dielectric layer 60 during operation is in contact with the adhesion layer. It was found that it diffused to the p-side electrode 51 via 70 and caused an increase in operating voltage due to this. In addition, materials such as Ti and Ni used as the adhesion layer 70 and materials such as Pd and Pt used as the p-side electrode 51 are highly reactive with hydrogen. It is considered that hydrogen diffused from the dielectric layer 60 containing 2 to the p-side electrode 51 through the adhesion layer 70.
  • the adhesion layer 70 in contact with the dielectric layer 60 containing SiO 2 is not in contact with the p-side electrode 51.
  • the pad electrode 52 is in contact with the dielectric layer 60 and the adhesion layer 70.
  • the material of the pad electrode 52 is composed of Au that has a very low reactivity with hydrogen.
  • FIG. 5D shows the calculation result of the change over time of the hydrogen concentration calculated using the diffusion equation.
  • 5D uses the laser structure 1000X of the comparative example shown in FIG. 5A and the laser structure 1X of the embodiment shown in FIG. 5B, respectively, and the hydrogen in SiO 2 is transferred to the adhesion layer 70 and the pad electrode 52. And a model of diffusing up to the p-side electrode 51.
  • the hydrogen concentration at the origin was fixed at 1E + 21 cm ⁇ 3 , and the hydrogen concentration after 40,000 hours was calculated with respect to the distance from the origin. That is, in the graph shown in FIG. 5D, the horizontal axis indicates the hydrogen diffusion distance (unit: ⁇ m) from the origin, and the vertical axis indicates the hydrogen concentration (unit: cm ⁇ 3 ).
  • the parameters used for the calculation are extracted from the experimental results of FIG. 5C, and the diffusion coefficient is 1E-11 m 2 / sec in the comparative laser structure 1000X, and 1E-18 m 2 / sec in the laser structure 1X of the embodiment. Calculated.
  • the operating voltage of the nitride semiconductor laser device 1 increases when the hydrogen concentration becomes 1E + 17 cm ⁇ 3 or more.
  • the distance at which the hydrogen concentration becomes 1E + 17 cm ⁇ 3 is 0.6 ⁇ m. Therefore, if the adhesion layer 70 is separated from the p-side electrode 51 by 0.6 ⁇ m or more, the nitride semiconductor laser An increase in the operating voltage of the element 1 can be suppressed.
  • the technique of the present disclosure has been made based on such knowledge, and SiO 2 was used as the dielectric layer 60 by preventing hydrogen contained in the dielectric layer 60 from diffusing into the electrode member 50. Even in this case, the increase of the operating voltage is suppressed.
  • the adhesion layer 70 made of Ti is not in contact with the p-side electrode 51.
  • the adhesion layer 70 and the p-side electrode 51 are completely in non-contact. However, even if the adhesion layer 70 and the p-side electrode 51 are partially in contact with each other due to manufacturing variations or the like, if the contact area is sufficiently small, the influence on the operating voltage is small and the increase in the operating voltage is suppressed. can do.
  • the nitride semiconductor laser device 1 includes the first nitride semiconductor layer 20 and the light emitting layer 30 formed of the nitride semiconductor formed on the first nitride semiconductor layer 20.
  • a second nitride semiconductor layer 40 having a ridge portion 40 a formed on the light emitting layer 30, a p-side electrode (ohmic electrode) 51 formed on the ridge portion 40 a, and a p-side electrode 51
  • the pad electrode 52 is formed and is wider than the ridge portion 40a.
  • the second nitride semiconductor layer 40 has a flat portion 40b on the side of the ridge portion 40a.
  • a dielectric layer 60 made of SiO 2 is formed on the side surface of the ridge portion 40a and the flat portion 40b.
  • An adhesion layer 70 is formed on the dielectric layer 60 on the flat portion 40b. The adhesion layer 70 is separated from the dielectric layer 60 on the side surface of the ridge portion 40a, is in contact with the pad electrode 52, and is not in contact with the p-side electrode 51.
  • the contact layer 70 and the p-side electrode 51 are not in contact with each other by the pad electrode 52 formed between the contact layer 70 and the p-side electrode 51.
  • hydrogen contained in the dielectric layer 60 can be prevented from diffusing into the p-side electrode 51. Therefore, it is possible to suppress an increase in operating voltage due to hydrogen.
  • the driving current of the nitride semiconductor laser element 1 flows to the ridge portion 40a through the p-side electrode 51 that is an ohmic electrode. Further, since the pad electrode 52 is formed widely up to the flat portion 40b, electrical connection by wire bonding or the like is facilitated.
  • the distances d1 and d2 between the adhesion layer 70 and the p-side electrode 51 are preferably 0.6 ⁇ m or more and 3.0 ⁇ m or less.
  • the second nitride semiconductor layer 40 may have a p-side contact layer 43 formed as the uppermost layer of the ridge portion 40a.
  • the p-side electrode 51 (ohmic electrode) is in contact with the upper surface of the p-side contact layer 43 that is the upper surface of the ridge portion 40a.
  • the width of the ridge portion 40a is preferably 10 ⁇ m or more and 50 ⁇ m or less.
  • the nitride semiconductor laser element 1 that can be operated with high light output can be realized.
  • the adhesion layer 70 preferably includes a layer having at least one of Ti and Ni.
  • heat generated when the nitride semiconductor laser element 1 is driven can be released to, for example, the submount 100 on which the nitride semiconductor laser element 1 is mounted, so that the nitride semiconductor laser element 1 operates at a high light output. Can be made.
  • the pad electrode 52 including a layer made of Au is suitable.
  • the nitride semiconductor laser device 1 can be operated with high light output.
  • the nitride semiconductor laser device 200 includes the nitride semiconductor laser element 1 and a submount 100 that holds the nitride semiconductor laser element 1.
  • the nitride semiconductor laser element 1 may have the first nitride semiconductor layer 20 side bonded to the submount 100 and the wire 110 connected to the pad electrode 52. .
  • the nitride semiconductor laser device 200 can be easily electrically connected by, for example, an external power source and wire bonding.
  • the nitride semiconductor laser element 1 may be bonded to the submount 100 on the pad electrode 52 side.
  • a solder layer 103 a may be interposed between the pad electrode 52 and the submount 100.
  • the pad electrode 52 may include at least a layer made of Au in contact with the solder layer 103a.
  • the solder layer 103a may contain Sn.
  • the junction between the nitride semiconductor laser device 200 and the submount 100 has an An—Sn eutectic structure. Therefore, the nitride semiconductor laser element 1 and the submount 100 are difficult to peel off.
  • the nitride semiconductor laser element and the nitride semiconductor laser device according to the present disclosure can be used as a light source for an image display device, illumination, or industrial equipment, and in particular, a light source for equipment that requires a relatively high light output. Useful as.

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  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
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  • Semiconductor Lasers (AREA)

Abstract

La présente invention concerne un élément laser à semi-conducteur au nitrure (1), pourvu : d'une première couche semi-conductrice au nitrure (20) ; d'une couche électroluminescente (30) comprenant un semi-conducteur au nitrure formé sur la première couche semi-conductrice au nitrure (20) ; une seconde couche semi-conductrice au nitrure (40) formée sur la couche électroluminescente (30) et qui comprend une partie arête (40a) ; une électrode côté p (51) formée sur la partie arête (40a) ; et une pointe d'électrode à extrémité plate (52) formée sur la seconde couche semi-conductrice au nitrure (40) et qui est plus large que la partie arête (40a), la seconde couche semi-conductrice au nitrure (40) comprenant une partie plate (40b) latérale à la partie arête (40a), une couche diélectrique (60) constituée de SiO2 étant formée sur la partie plate (40b) et sur une surface latérale de la partie arête (40a), une couche d'adhérence (70) étant formée sur la couche diélectrique (60) située sur la partie plate (40b), et la couche d'adhérence (70) étant séparée de la couche diélectrique (60) sur la surface latérale de la partie arête (40a), n'étant pas en contact avec l'électrode côté p (51), et étant en contact avec la pointe d'électrode à extrémité plate (52).
PCT/JP2018/010129 2017-03-28 2018-03-15 Élément laser à semi-conducteur au nitrure et dispositif laser à semi-conducteur au nitrure WO2018180524A1 (fr)

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US20190245322A1 (en) * 2016-07-14 2019-08-08 Panasonic Corporation Nitride semiconductor laser and nitride semiconductor laser device
WO2020110783A1 (fr) * 2018-11-30 2020-06-04 パナソニックセミコンダクターソリューションズ株式会社 Dispositif laser à semi-conducteur
WO2021124733A1 (fr) * 2019-12-17 2021-06-24 パナソニック株式会社 Élément laser à semi-conducteur
WO2022049996A1 (fr) * 2020-09-07 2022-03-10 ソニーグループ株式会社 Laser à semi-conducteur et dispositif laser à semi-conducteur

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WO2022049996A1 (fr) * 2020-09-07 2022-03-10 ソニーグループ株式会社 Laser à semi-conducteur et dispositif laser à semi-conducteur

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