WO2018166028A1 - 柔性内嵌式触控结构及其制作方法 - Google Patents

柔性内嵌式触控结构及其制作方法 Download PDF

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Publication number
WO2018166028A1
WO2018166028A1 PCT/CN2017/080736 CN2017080736W WO2018166028A1 WO 2018166028 A1 WO2018166028 A1 WO 2018166028A1 CN 2017080736 W CN2017080736 W CN 2017080736W WO 2018166028 A1 WO2018166028 A1 WO 2018166028A1
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layer
touch
pixel
anode
electrodes
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PCT/CN2017/080736
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English (en)
French (fr)
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苏伟盛
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武汉华星光电技术有限公司
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Priority to US15/571,037 priority Critical patent/US10180744B2/en
Publication of WO2018166028A1 publication Critical patent/WO2018166028A1/zh

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    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G06F3/0412—Digitisers structurally integrated in a display
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G06F3/044—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G06F3/044—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means
    • G06F3/0443—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means using a single layer of sensing electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/82—Cathodes
    • H10K50/824—Cathodes combined with auxiliary electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/122—Pixel-defining structures or layers, e.g. banks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/123—Connection of the pixel electrodes to the thin film transistors [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/124—Insulating layers formed between TFT elements and OLED elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/131—Interconnections, e.g. wiring lines or terminals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/40—OLEDs integrated with touch screens
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H10K71/166—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using selective deposition, e.g. using a mask
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/621—Providing a shape to conductive layers, e.g. patterning or selective deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
    • H10K77/10—Substrates, e.g. flexible substrates
    • H10K77/111—Flexible substrates
    • G—PHYSICS
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    • G06F2203/041—Indexing scheme relating to G06F3/041 - G06F3/045
    • G06F2203/04102—Flexible digitiser, i.e. constructional details for allowing the whole digitising part of a device to be flexed or rolled like a sheet of paper
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F2203/00—Indexing scheme relating to G06F3/00 - G06F3/048
    • G06F2203/041—Indexing scheme relating to G06F3/041 - G06F3/045
    • G06F2203/04103—Manufacturing, i.e. details related to manufacturing processes specially suited for touch sensitive devices
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F2203/00—Indexing scheme relating to G06F3/00 - G06F3/048
    • G06F2203/041—Indexing scheme relating to G06F3/041 - G06F3/045
    • G06F2203/04111—Cross over in capacitive digitiser, i.e. details of structures for connecting electrodes of the sensing pattern where the connections cross each other, e.g. bridge structures comprising an insulating layer, or vias through substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/311—Flexible OLED
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/1201—Manufacture or treatment
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

  • the present invention relates to the field of touch display technologies, and in particular, to a flexible in-cell touch structure and a method of fabricating the same.
  • touch screens have become popular in people's daily lives. For example, users of touch screens can directly use the finger or stylus to operate programs on the screen and input messages/texts. The pattern saves the trouble of using an input device such as a keyboard or a button.
  • the touch screen usually consists of a sensing panel and a display disposed behind the sensing panel. The electronic device judges the meaning of the touch according to the position touched by the user on the sensing panel and the picture presented by the display at the time, and executes the corresponding operation result.
  • capacitive touch technologies widely used include cross-bridge capacitive touch technology and self-capacitive touch technology.
  • the self-capacitive touch screen is realized by a single-layer self-capacitance touch electrode structure with a simple process.
  • the touch electrodes are mostly designed with a square pattern, in order to connect the touch electrodes with The touch detection chip is connected, and the touch signal line corresponding to the touch electrode is disposed to transmit the touch signal to the touch detection chip; and the resistance difference and the capacitance difference between the touch electrodes are reduced.
  • a virtual touch signal line connected to the touch electrode is provided.
  • the cross-bridge capacitive touch structure has only one layer for forming a transparent conductive layer of the touch function, and the touch electrodes are mostly designed with a diamond shape, and the conventional cross-bridge capacitive touch structure is as shown in FIG.
  • the structure of the substrate is omitted in the figure to clearly express the bridge structure, the first touch electrode 57 having a plurality of rows of diamonds in the touch electrode layer, and the second of the plurality of diamonds disposed between the first touch electrodes 57
  • the touch electrodes 55 are connected to the first touch electrodes 57 of the first touch electrodes 57 of each row through the first connection portion 56 of the same layer. To transmit electrical signals, a second touch such as a row is required.
  • the electrodes 55 are connected in series.
  • the bridge body 59 spanning the first connecting portion 56 is required to connect the adjacent second touch electrodes 55, that is, a bridge structure is formed, and a capacitor is formed at the bridge point of the bridge structure, and insulation needs to be constructed.
  • a dielectric such as the insulating layer 52 shown in FIG. 1, is used to isolate the first connection portion 56 from the bridge body 59.
  • FIG. 2 it is a schematic diagram of a conventional flexible touch structure.
  • the invention comprises: a flexible panel formed mainly by a TFT substrate 1 , a light-emitting layer 2 and an encapsulation layer 3 which are sequentially stacked, an optical adhesive layer 4 disposed above the encapsulation layer 3 of the flexible panel, and a touch sensor layer 5 attached to the optical adhesive layer 4 .
  • a flexible panel formed mainly by a TFT substrate 1 , a light-emitting layer 2 and an encapsulation layer 3 which are sequentially stacked, an optical adhesive layer 4 disposed above the encapsulation layer 3 of the flexible panel, and a touch sensor layer 5 attached to the optical adhesive layer 4 .
  • the traditional full-fitting technology requires a lot of glue, which may cause peeling after multiple bending, resulting in panel failure.
  • An object of the present invention is to provide a flexible in-cell touch structure, which integrates a touch sensor into a flexible panel, can effectively reduce the overall thickness of the panel, increase the bending property of the panel, and has a simple manufacturing method.
  • the object of the present invention is to provide a method for manufacturing a flexible in-cell touch structure, which integrates a touch sensor into a flexible panel, can effectively reduce the overall thickness of the panel, increase the bending property of the panel, and has a simple manufacturing method. .
  • the present invention provides a flexible in-cell touch structure, including: a TFT substrate, a flat layer disposed on the TFT substrate, an OLED touch layer disposed on the TFT substrate and the flat layer, and an OLED touch The encapsulation layer on the control layer;
  • the OLED touch layer includes: an anode layer disposed on the TFT substrate, a pixel defining layer disposed on the flat layer and the anode layer, a light emitting layer disposed on the anode layer, and a pixel defining layer and a cathode layer on the luminescent layer;
  • the pixel defining layer encloses a plurality of arrayed pixel openings on the anode layer, the anode layer includes a plurality of anode units disposed corresponding to the pixel openings, and is spaced apart from the anode unit below the pixel defining layer a plurality of touch connection lines, wherein the light emitting layer is disposed in the pixel opening;
  • the pixel defining layer is provided with a plurality of via holes above the touch connecting line;
  • the cathode layer includes a plurality of touch electrodes, and the plurality of touch electrodes respectively pass through the plurality of via holes and the touch
  • the connecting wires are connected to form a touch sensor structure;
  • the cathode layer covers the plurality of pixel openings, and the light-emitting layer in each pixel opening, the corresponding anode unit below the pixel, and the corresponding cathode layer above thereof together constitute an OLED unit structure.
  • the touch sensor structure is a cross-bridge capacitive touch sensor structure
  • the plurality of touch electrodes include a plurality of first touch electrode portions located in the plurality of first touch electrode portions. a plurality of second touch electrode portions and a plurality of connecting portions for electrically connecting adjacent two first touch electrode portions;
  • the touch connection line is used as a bridge body in a bridge type capacitive touch sensor structure for electrically connecting adjacent two second touch electrode portions.
  • the plurality of touch electrodes cover a portion of the plurality of pixel openings
  • the cathode layer further includes a plurality of complementary electrodes between the plurality of touch electrodes, the plurality of complementary electrodes covering the a portion of the remaining pixels of the pixel;
  • the first touch electrode portion and the second touch electrode portion are all diamond-shaped.
  • the touch sensor structure is a self-capacitive touch sensor structure
  • the touch connection line is used as a signal line in a self-capacitive touch sensor structure.
  • the plurality of touch electrodes are all rectangular, and the plurality of touch electrodes cover the plurality of pixel openings.
  • the invention also provides a manufacturing method of a flexible in-cell touch structure, comprising the following steps:
  • Step 1 Providing a TFT substrate, forming an organic material film on the TFT substrate, and patterning the organic material film to obtain a flat layer;
  • Step 2 depositing a first conductive layer on the TFT substrate and the flat layer, and patterning the first conductive layer to obtain an anode layer, wherein the anode layer includes a plurality of anode units arranged at intervals, and a plurality of touch connection lines disposed between the plurality of anode units;
  • Step 3 forming an isolation layer on the flat layer and the anode layer, and patterning the isolation layer to obtain a pixel definition layer, where the pixel definition layer is arranged on the anode layer corresponding to the plurality of anode units a plurality of pixel openings arranged in an array, and the pixel defining layer has a plurality of via holes above the touch connecting line;
  • Step 4 forming a light-emitting layer in the pixel opening surrounded by the pixel defining layer on the anode layer;
  • Step 5 providing a first fine mask, using the first fine mask as a shielding layer, and depositing a patterned cathode layer on the pixel defining layer and the light emitting layer to obtain an anode layer and a pixel definition OLED touch layer of layer, luminescent layer, and cathode layer;
  • the cathode layer includes a plurality of touch electrodes, and the plurality of touch electrodes are respectively connected to the touch connection lines through the plurality of via holes to form a touch sensor structure; and the cathode layer covers the a plurality of pixel openings, the light-emitting layer in each pixel opening, the corresponding anode unit below the pixel, and the corresponding cathode layer above thereof together constitute an OLED unit structure;
  • Step 6 Form an encapsulation layer on the pixel defining layer and the cathode layer.
  • the touch sensor structure is a cross-bridge capacitive touch sensor structure
  • the plurality of touch electrodes include a plurality of first touch electrode portions located in the plurality of first touch electrode portions. a plurality of second touch electrode portions and a plurality of connecting portions for electrically connecting adjacent two first touch electrode portions;
  • the touch connection line is used as a bridge body in a bridge type capacitive touch sensor structure for electrically connecting adjacent two second touch electrode portions.
  • the plurality of touch electrodes cover a portion of the plurality of pixel openings
  • the cathode layer further includes a plurality of complementary electrodes between the plurality of touch electrodes, the plurality of complementary electrodes covering the a portion of the remaining pixels of the pixel;
  • the first touch electrode portion and the second touch electrode portion are all diamond-shaped.
  • the touch sensor structure is a self-capacitive touch sensor structure
  • the touch connection line is used as a signal line in a self-capacitive touch sensor structure.
  • the plurality of touch electrodes are all rectangular, and the plurality of touch electrodes cover the plurality of pixel openings.
  • the invention also provides a manufacturing method of a flexible in-cell touch structure, comprising the following steps:
  • Step 1 Providing a TFT substrate, forming an organic material film on the TFT substrate, and patterning the organic material film to obtain a flat layer;
  • Step 2 depositing a first conductive layer on the TFT substrate and the flat layer, and patterning the first conductive layer to obtain an anode layer, wherein the anode layer includes a plurality of anode units arranged at intervals, and a plurality of touch connection lines disposed between the plurality of anode units;
  • Step 3 forming an isolation layer on the flat layer and the anode layer, and patterning the isolation layer to obtain a pixel definition layer, where the pixel definition layer is arranged on the anode layer corresponding to the plurality of anode units a plurality of pixel openings arranged in an array, and the pixel defining layer has a plurality of via holes above the touch connecting line;
  • Step 4 forming a light-emitting layer in the pixel opening surrounded by the pixel defining layer on the anode layer;
  • Step 5 providing a first fine mask, using the first fine mask as a shielding layer, and depositing a patterned cathode layer on the pixel defining layer and the light emitting layer to obtain an anode layer and a pixel definition OLED touch layer of layer, luminescent layer, and cathode layer;
  • the cathode layer includes a plurality of touch electrodes, and the plurality of touch electrodes are respectively connected to the touch connection lines through the plurality of via holes to form a touch sensor structure; and the cathode layer covers the a plurality of pixel openings, the light-emitting layer in each pixel opening, the corresponding anode unit below the pixel, and the corresponding cathode layer above thereof together constitute an OLED unit structure;
  • Step 6 Form an encapsulation layer on the pixel defining layer and the cathode layer;
  • the touch sensor structure is a cross-bridge capacitive touch sensor structure, and the plurality of touch electrodes include a plurality of first touch electrode portions and are located between the plurality of first touch electrode portions. a plurality of second touch electrode portions and a plurality of connecting portions for electrically connecting adjacent two first touch electrode portions;
  • the touch connection line is used as a bridge body in a bridge type capacitive touch sensor structure for electrically connecting adjacent two second touch electrode portions;
  • the plurality of touch electrodes cover a portion of the plurality of pixel openings
  • the cathode layer further includes a plurality of complementary electrodes between the plurality of touch electrodes, wherein the plurality of complementary electrodes are covered Covering a remaining portion of the plurality of pixel openings;
  • the first touch electrode portion and the second touch electrode portion are all diamond-shaped.
  • the present invention provides a flexible in-cell touch structure including a TFT substrate, a flat layer, an OLED touch layer, and an encapsulation layer;
  • the OLED touch layer includes an anode layer, a pixel definition layer, and a light emitting layer and a cathode layer;
  • the anode layer includes a plurality of anode units, and a plurality of touch connecting lines, wherein the plurality of touch connecting lines are located below the pixel defining layer;
  • the cathode layer includes a plurality of touches
  • the control electrode, the plurality of touch electrodes are respectively connected to the touch connection line through a plurality of via holes on the pixel definition layer, thereby forming a touch sensor structure;
  • the invention integrates the touch sensor into the flexible panel
  • the utility model can effectively reduce the number of times of bonding in the panel, reduce the overall thickness of the panel, increase the bending property of the panel, thereby improving the yield, and only need to change the graphic design of the cathode layer and
  • the method is simple.
  • the method for fabricating a flexible in-cell touch structure provided by the present invention is to manufacture a touch connection line for a touch line in a non-light-emitting area when patterning an anode layer, compared with the prior flexible OLED panel process.
  • the cathode layer is formed by vapor deposition on the entire surface, and is changed to a patterned cathode layer by vapor deposition using a fine mask, a touch electrode is formed in the cathode layer, and the touch electrode is brought into contact with the touch connection line, thereby completing
  • the touch sensor structure can effectively reduce the number of times of bonding in the panel by integrating the touch sensor into the flexible panel, reduce the overall thickness of the panel, increase the bending property of the panel, thereby improving the yield, and the manufacturing method is simple.
  • FIG. 1 is a schematic top view of a conventional bridge type capacitive touch structure
  • FIG. 2 is a schematic view of a conventional flexible touch structure
  • FIG. 3 is a schematic top view of a first embodiment of a flexible in-cell touch structure according to the present invention.
  • FIG. 4 is a schematic top view of a second embodiment of a flexible in-cell touch structure according to the present invention.
  • FIG. 5 is a schematic flow chart of a method for fabricating a flexible in-cell touch structure according to the present invention.
  • 6-7 are schematic diagrams of step 1 of a method for fabricating a flexible in-cell touch structure according to the present invention.
  • step 2 of a method for fabricating a flexible in-cell touch structure according to the present invention are schematic diagrams of step 2 of a method for fabricating a flexible in-cell touch structure according to the present invention.
  • FIGS. 10-11 are schematic diagrams of step 3 of a method for fabricating a flexible in-cell touch structure according to the present invention.
  • step 4 is a schematic diagram of step 4 of a method for fabricating a flexible in-cell touch structure according to the present invention.
  • step 5 is a schematic diagram of step 5 of a method for fabricating a flexible in-cell touch structure according to the present invention.
  • step 6 of the method for fabricating a flexible in-cell touch structure of the present invention is a schematic diagram of step 6 of the method for fabricating a flexible in-cell touch structure of the present invention and a schematic diagram of the flexible in-cell touch structure of the present invention.
  • the present invention provides a flexible in-cell touch structure, which mainly includes a TFT substrate 10 , a flat layer 40 disposed on the TFT substrate 10 , and an OLED touch layer 20 disposed on the TFT substrate 10 and the flat layer 40 . And an encapsulation layer 30 disposed on the OLED touch layer 20.
  • the invention proposes a technology for integrating a touch sensor into a flexible panel, which can reduce the number of times of bonding and improve the yield, and effectively reduce the overall thickness of the panel and increase the bending property.
  • the OLED touch layer 20 includes an anode layer 21 disposed on the TFT substrate 10, and a pixel defining layer disposed on the flat layer 40 and the anode layer 21. 22.
  • the pixel defining layer 22 encloses a plurality of arrayed pixel openings 225 on the anode layer 21, the anode layer 21 includes a plurality of anode units 211 disposed corresponding to the pixel openings 225, and is located in the pixel definition a plurality of touch connection lines 212 spaced apart from the anode unit 211 under the layer 22, the light-emitting layer 23 is disposed in the pixel opening 225;
  • the pixel defining layer 22 is provided with a plurality of via holes 221 above the touch control line 212.
  • the cathode layer 24 includes a plurality of touch electrodes 241, and the plurality of touch electrodes 241 pass through the plurality of touch electrodes 241 respectively.
  • the hole 221 is connected to the touch connection line 212 to form the touch sensor structure 25;
  • the cathode layer 24 covers the plurality of pixel openings 225.
  • the luminescent layer 23 in each pixel opening 225, the corresponding anode unit 211 below it, and the corresponding cathode layer 24 thereon form an OLED unit structure D.
  • the touch sensor structure 25 is a cross-bridge capacitive touch sensor structure
  • the plurality of touch electrodes 241 include a plurality of first touch electrode portions 2411 arranged in an array.
  • the plurality of second touch electrode portions 2412 arranged in an array between the plurality of first touch electrode portions 2411 and the plurality of connections for electrically connecting the first and second adjacent touch electrode portions 2411 Department 2413;
  • the touch connection line 212 is used as a bridge body in the structure of the bridge type capacitive touch sensor for electrically connecting the two second touch electrode portions 2412 adjacent to each other.
  • the plurality of touch electrodes 241 cover a portion of the plurality of pixel openings 225
  • the cathode layer 24 further includes a plurality of complementary electrodes 242 located between the plurality of touch electrodes 241, the plurality of The complementary electrode 242 covers a portion of the plurality of pixel openings 225; the first touch electrode portion 2411 and the second touch electrode portion 2412 are all diamond-shaped.
  • the anode unit 211 is connected to the TFT substrate 10 through the flat layer 40.
  • the light-emitting layer 23 includes a hole injection layer, a hole transport layer, an organic light-emitting layer, an electron transport layer, and an electron injection layer which are sequentially formed from bottom to top.
  • FIG. 4 is a schematic top view of a second embodiment of a flexible in-cell touch structure according to the present invention.
  • the structure of the TFT substrate 10, the flat layer 40, and the like are also omitted in FIG. 4 to clearly express the embodiment.
  • the touch sensor structure 25 is a self-capacitive touch sensor structure, and the touch connection line 212 is used as a self-capacitive touch sensor. Signal lines in the structure.
  • the plurality of touch electrodes 241 are all rectangular, and the plurality of touch electrodes 241 cover the plurality of pixel openings 225.
  • the flexible in-cell touch structure of the present invention can effectively reduce the number of times of bonding in the panel by integrating the touch sensor into the flexible panel, reduce the overall thickness of the panel, and increase the bending property of the panel, thereby improving the yield.
  • the touch connection line 212 is formed in the non-light-emitting area in the anode layer 21, and the touch electrode 241 is formed in the cathode layer 24.
  • the pattern of the touch electrode 241 and the touch connection line 212 is determined according to the type of the pre-formed touch sensor structure 25, such as a bridge type capacitive touch sensor or a self-capacitive touch sensor, and the manufacturing method thereof simple.
  • the present invention further provides a method for fabricating a flexible in-cell touch structure, including the following steps:
  • Step 1 as shown in FIG. 6-7, a TFT substrate 10 is provided, an organic material film 400 is formed on the TFT substrate 10, and the organic material film 400 is patterned to obtain a flat layer 40.
  • Step 2 As shown in FIG. 8-9, a first conductive layer 210 is deposited on the TFT substrate 10 and the flat layer 40, and the first conductive layer 210 is patterned to obtain an anode layer 21.
  • the anode layer 21 includes a plurality of spaced-apart anode units 211 and a plurality of touch connecting lines 212 disposed between the plurality of anode units 211.
  • the anode unit 211 passes through the flat layer 40 and the TFT substrate 10 connection.
  • Step 3 as shown in FIG. 10-11, forming an isolation layer 220 on the planar layer 40 and the anode layer 21, and patterning the isolation layer 220 to obtain a pixel defining layer 22, the pixel defining layer A plurality of arrayed pixel openings 225 are arranged on the anode layer 21 corresponding to the plurality of anode units 211, and the pixel defining layer 22 has a plurality of via holes 221 above the touch connecting lines 212.
  • Step 4 as shown in FIG. 12, a light-emitting layer 23 is formed in the pixel opening 225 surrounded by the pixel defining layer 22 on the anode layer 21.
  • the light-emitting layer 23 includes a hole injection layer, a hole transport layer, an organic light-emitting layer, an electron transport layer, and an electron injection layer which are sequentially formed from bottom to top.
  • the light-emitting layer 23 is formed on the anode layer 21 by using the second fine mask 600 in the step 4.
  • Step 5 as shown in FIG. 13, a first fine mask 500 is provided, and the first fine mask 500 is used as a shielding layer, and the pixel defining layer 22 and the light emitting layer 23 are vapor-deposited to form a patterned layer.
  • the cathode layer 24 is provided with an OLED touch layer 20 including an anode layer 21, a pixel defining layer 22, a light emitting layer 23, and a cathode layer 24.
  • the cathode layer 24 includes a plurality of touch electrodes 241, and the plurality of touch electrodes 241 are respectively connected to the touch connection lines 212 through the plurality of via holes 221, thereby forming a touch sensor structure.
  • the cathode layer 24 covers the plurality of pixel openings 225, and the light-emitting layer 23 in each pixel opening 225, the corresponding anode unit 211 below it, and the corresponding cathode layer 24 thereon constitute an OLED unit structure. D.
  • Step 6 as shown in FIG. 14, an encapsulation layer 30 is formed on the pixel defining layer 22 and the cathode layer 24 to complete the fabrication of the flexible in-cell touch structure.
  • the touch sensor structure 25 may be a cross-bridge capacitive touch sensor structure, and the plurality of touch electrodes 241 include a plurality of first touch electrode portions 2411 arranged in an array. a plurality of second touch electrode portions 2412 arranged in an array between the first touch electrode portions 2411 and a plurality of connecting portions 2413 for electrically connecting the first and second adjacent touch electrode portions 2411;
  • the touch connection line 212 is used as a bridge body in the structure of the bridge type capacitive touch sensor for electrically connecting the two second touch electrode portions 2412 adjacent to each other.
  • the plurality of touch electrodes 241 cover a portion of the plurality of pixel openings 225.
  • the cathode layer 24 further includes a plurality of complementary electrodes 242 located between the plurality of touch electrodes 241, and the plurality of complementary electrodes 242 The remaining ones of the plurality of pixel openings 225 are covered; the first touch electrode portion 2411 and the second touch electrode portion 2412 are all diamond-shaped. or,
  • the touch sensor structure 25 can also be a self-capacitive touch sensor structure.
  • Wiring 212 is used as a signal line in a self-contained touch sensor structure.
  • the plurality of touch electrodes 241 are all rectangular, and the plurality of touch electrodes 241 cover the plurality of pixel openings 225.
  • the touch connection line 212 for the touch line is formed in the non-light-emitting area, and Originally, the entire surface is vapor-deposited to form a cathode layer, and the cathode layer 24 is formed by vapor deposition using a fine mask, that is, a common metal mask for vapor deposition is required when the cathode layer 24 is formed (Common metal mask). , CMM) is changed to a fine metal mask (FMM), the touch electrode 241 is formed in the cathode layer 24, and the touch electrode 241 is brought into contact with the touch connection line 212 during vapor deposition, thereby completing the touch.
  • CMM common metal mask for vapor deposition is required when the cathode layer 24 is formed
  • FMM fine metal mask
  • the present invention provides a flexible in-cell touch structure including a TFT substrate, a flat layer, an OLED touch layer, and an encapsulation layer; the OLED touch layer includes an anode layer, a pixel defining layer, and a light emitting layer.
  • the anode layer includes a plurality of anode units, and a plurality of touch connection lines, wherein the plurality of touch connection lines are located below the pixel definition layer; and the cathode layer includes a plurality of touches An electrode, the plurality of touch electrodes are respectively connected to the touch connection line through a plurality of via holes on the pixel definition layer, thereby forming a touch sensor structure; and the invention integrates the touch sensor into the flexible panel,
  • the utility model can effectively reduce the number of times of bonding in the panel, reduce the overall thickness of the panel, increase the bending property of the panel, thereby improving the yield, and only need to change the graphic design of the cathode layer and the anode layer compared with the existing flexible OLED panel, and the manufacturing method simple.
  • the method for fabricating a flexible in-cell touch structure is to manufacture a touch connection line for a touch line in a non-light-emitting area when patterning an anode layer, compared with the prior flexible OLED panel process.
  • the cathode layer is formed by vapor deposition on the entire surface, and is changed to a patterned cathode layer by vapor deposition using a fine mask, a touch electrode is formed in the cathode layer, and the touch electrode is brought into contact with the touch connection line, thereby completing
  • the touch sensor structure can effectively reduce the number of times of bonding in the panel by integrating the touch sensor into the flexible panel, reduce the overall thickness of the panel, increase the bending property of the panel, thereby improving the yield, and the manufacturing method is simple.

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Abstract

一种柔性内嵌式触控结构（25）及其制作方法，柔性内嵌式触控结构（25）包括TFT基板（10）、平坦层（40）、OLED触控层（20）、封装层（30）；OLED触控层（20）包括阳极层（21）、像素定义层（22）、发光层（23）、阴极层（24）；阳极层（21）包括数个阳极单元（211）、及数个触控连接线（212），数个触控连接线（212）对应位于像素定义层（22）下方；阴极层（24）包括数个触控电极（241），数个触控电极（241）分别通过像素定义层（22）上的数个过孔（221）与触控连接线（212）相连接，从而构成触控传感器结构（25）；通过将触控传感器整合进柔性面板当中，能够减少面板内贴合次数，减薄面板的整体厚度，增加面板的弯折性。

Description

柔性内嵌式触控结构及其制作方法 技术领域
本发明涉及触控显示技术领域，尤其涉及一种柔性内嵌式触控结构及其制作方法。
背景技术
随着显示技术的快速发展，触控屏已经普及到人们的日常生活中，举例而言，透过触控屏使用者可直接以手指或触控笔在屏幕上操作程式、输入讯息/文字/图样，省去使用键盘或按键等输入装置的麻烦。实际上，触控屏通常由一感应面板及设置于感应面板后方的显示器组成。电子装置根据使用者在感应面板上所触碰的位置，以及当时显示器所呈现的画面，来判断该次触碰的意涵，并执行相对应的操作结果。
目前被广泛应用的电容式触控技术主要有跨桥式电容式触控技术和自容式触控技术。其中，自容式触控屏由制程较单纯的单层自电容的触控电极结构实现，自容式触控屏中，触控电极大多采用正方形(Block Pattern)设计，为了将触控电极与触控侦测芯片连接，会设置与触控电极对应连接的触控信号线，从而将触控信号传递给触控侦测芯片；且为了减小各触控电极之间的电阻差及电容差以保证触控精度，会设置与触控电极对应连接的虚拟触控信号线。而跨桥式电容式触控结构，用以形成触控功能的透明导电层也只有一层，而触控电极大多采用菱形设计，常规的跨桥式电容式触控结构，如图1所示，图中省略基板等结构，以清楚表达桥点结构，触控电极层中设有多列菱形的第一触控电极57、及多行设于第一触控电极57间的菱形的第二触控电极55，每一列第一触控电极57中相邻第一触控电极57则通过同层的第一连接部56相连，为使电信号传出，需将如一行的第二触控电极55串接，于此，需构造跨越第一连接部56的桥体59以连接相邻的第二触控电极55，即形成搭桥结构，另外于搭桥结构的桥点形成电容，需构造绝缘介质，如图1中所示的绝缘层52，以隔离第一连接部56与桥体59。
近年来柔性显示器也开始进入市场，但目前的柔性触控产品有以下的缺点：1、仅为一固定形状，无法任意弯折；2、触控功能需要另外贴合触控传感器薄膜，工艺上困难度大幅增加；3、触控传感器的电极材料仍为氧化铟锡(ITO)，弯折性不足。参见图2，其为现有柔性触控结构的示意图， 包括：主要由依次层叠的TFT基板1、发光层2及封装层3形成的柔性面板，柔性面板的封装层3上方设置的光学胶层4，光学胶层4上方贴合的触控传感器层5。现有柔性触控结构中，传统全贴合技术会需要许多胶材，多次弯折后会产生剥离(peeling)的状况，造成面板失效。
发明内容
本发明的目的在于提供一种柔性内嵌式触控结构，将触控传感器整合进柔性面板当中，能够有效减薄面板的整体厚度，增加面板的弯折性，且制作方法简单。
本发明的目的还在于提供一种柔性内嵌式触控结构的制作方法，将触控传感器整合进柔性面板当中，能够有效减薄面板的整体厚度，增加面板的弯折性，且制作方法简单。
为实现上述目的，本发明提供一种柔性内嵌式触控结构，包括：TFT基板、设于TFT基板上平坦层、设于TFT基板及平坦层上的OLED触控层、以及设于OLED触控层上的封装层；
所述OLED触控层包括：设于所述TFT基板上的阳极层、设于所述平坦层及阳极层上的像素定义层、设于阳极层上的发光层、以及设于像素定义层及发光层上的阴极层；
所述像素定义层在阳极层上围出数个阵列排布的像素开口，所述阳极层包括与所述像素开口对应设置的数个阳极单元、及位于所述像素定义层下方与阳极单元间隔的数个触控连接线，所述发光层设于所述像素开口内；
所述像素定义层在所述触控连接线上方设有数个过孔；所述阴极层包括数个触控电极，所述数个触控电极分别通过所述数个过孔与所述触控连接线相连接，从而构成触控传感器结构；
所述阴极层覆盖所述数个像素开口，每一像素开口内的发光层、其下方对应的阳极单元、及其上方对应的阴极层共同构成一OLED单元结构。
可选地，所述触控传感器结构为跨桥式电容式触控传感器结构，所述数个触控电极包括数个第一触控电极部、位于所述数个第一触控电极部之间的数个第二触控电极部、及用于将相邻两第一触控电极部电连接的数个连接部；
所述触控连接线用作跨桥式电容式触控传感器结构中的桥体，用于将相邻两第二触控电极部电连接。
所述数个触控电极覆盖所述数个像素开口中的一部分，所述阴极层还包括位于数个触控电极之间的数个补充电极，所述数个补充电极覆盖所述 数个像素开口中剩余的一部分；
所述第一触控电极部及第二触控电极部均为菱形。
可选地，所述触控传感器结构为自容式触控传感器结构，所述触控连接线用作自容式触控传感器结构中的信号线。
所述数个触控电极均为长方形，所述数个触控电极覆盖所述数个像素开口。
本发明还提供一种柔性内嵌式触控结构的制作方法，包括如下步骤：
步骤1、提供一TFT基板，在所述TFT基板上形成一有机材料膜，对所述有机材料膜进行图案化处理，得到平坦层；
步骤2、在所述TFT基板及平坦层上沉积形成第一导电层，对所述第一导电层进行图案化处理，得到阳极层，所述阳极层包括数个间隔排布的阳极单元、及设于所述数个阳极单元之间的数个触控连接线；
步骤3、在所述平坦层及阳极层上形成一隔离层，对所述隔离层进行图案化处理，得到像素定义层，所述像素定义层在阳极层上对应所述数个阳极单元围出数个阵列排布的像素开口，且所述像素定义层在所述触控连接线上方具有数个过孔；
步骤4、在所述像素定义层在所述阳极层上所围出的像素开口内形成发光层；
步骤5、提供第一精细掩膜板，以所述第一精细掩膜板为遮蔽层，在所述像素定义层及发光层上蒸镀形成图案化的阴极层，得到包括阳极层、像素定义层、发光层、以及阴极层的OLED触控层；
所述阴极层包括数个触控电极，所述数个触控电极分别通过所述数个过孔与所述触控连接线相连接，从而构成触控传感器结构；且所述阴极层覆盖所述数个像素开口，每一像素开口内的发光层、其下方对应的阳极单元、及其上方对应的阴极层共同构成一OLED单元结构；
步骤6、在所述像素定义层及阴极层上形成封装层。
可选地，所述触控传感器结构为跨桥式电容式触控传感器结构，所述数个触控电极包括数个第一触控电极部、位于所述数个第一触控电极部之间的数个第二触控电极部、及用于将相邻两第一触控电极部电连接的数个连接部；
所述触控连接线用作跨桥式电容式触控传感器结构中的桥体，用于将相邻两第二触控电极部电连接。
所述数个触控电极覆盖所述数个像素开口中的一部分，所述阴极层还包括位于数个触控电极之间的数个补充电极，所述数个补充电极覆盖所述 数个像素开口中剩余的一部分；
所述第一触控电极部及第二触控电极部均为菱形。
可选地，所述触控传感器结构为自容式触控传感器结构，所述触控连接线用作自容式触控传感器结构中的信号线。
所述数个触控电极均为长方形，所述数个触控电极覆盖所述数个像素开口。
本发明还提供一种柔性内嵌式触控结构的制作方法，包括如下步骤：
步骤1、提供一TFT基板，在所述TFT基板上形成一有机材料膜，对所述有机材料膜进行图案化处理，得到平坦层；
步骤2、在所述TFT基板及平坦层上沉积形成第一导电层，对所述第一导电层进行图案化处理，得到阳极层，所述阳极层包括数个间隔排布的阳极单元、及设于所述数个阳极单元之间的数个触控连接线；
步骤3、在所述平坦层及阳极层上形成一隔离层，对所述隔离层进行图案化处理，得到像素定义层，所述像素定义层在阳极层上对应所述数个阳极单元围出数个阵列排布的像素开口，且所述像素定义层在所述触控连接线上方具有数个过孔；
步骤4、在所述像素定义层在所述阳极层上所围出的像素开口内形成发光层；
步骤5、提供第一精细掩膜板，以所述第一精细掩膜板为遮蔽层，在所述像素定义层及发光层上蒸镀形成图案化的阴极层，得到包括阳极层、像素定义层、发光层、以及阴极层的OLED触控层；
所述阴极层包括数个触控电极，所述数个触控电极分别通过所述数个过孔与所述触控连接线相连接，从而构成触控传感器结构；且所述阴极层覆盖所述数个像素开口，每一像素开口内的发光层、其下方对应的阳极单元、及其上方对应的阴极层共同构成一OLED单元结构；
步骤6、在所述像素定义层及阴极层上形成封装层；
其中，所述触控传感器结构为跨桥式电容式触控传感器结构，所述数个触控电极包括数个第一触控电极部、位于所述数个第一触控电极部之间的数个第二触控电极部、及用于将相邻两第一触控电极部电连接的数个连接部；
所述触控连接线用作跨桥式电容式触控传感器结构中的桥体，用于将相邻两第二触控电极部电连接；
其中，所述数个触控电极覆盖所述数个像素开口中的一部分，所述阴极层还包括位于数个触控电极之间的数个补充电极，所述数个补充电极覆 盖所述数个像素开口中剩余的一部分；
所述第一触控电极部及第二触控电极部均为菱形。
本发明的有益效果：本发明提供的一种柔性内嵌式触控结构，包括TFT基板、平坦层、OLED触控层、以及封装层；所述OLED触控层包括阳极层、像素定义层、发光层、以及阴极层；所述阳极层包括数个阳极单元、及数个触控连接线，所述数个触控连接线对应位于所述像素定义层下方；所述阴极层包括数个触控电极，所述数个触控电极分别通过像素定义层上的数个过孔与所述触控连接线相连接，从而构成触控传感器结构；本发明通过将触控传感器整合进柔性面板当中，能够有效减少面板内贴合次数，减薄面板的整体厚度，增加面板的弯折性，从而提升良率，相对于现有柔性OLED面板，只需改变阴极层及阳极层的图形设计，制作方法简单。本发明提供的一种柔性内嵌式触控结构的制作方法，相对于现有柔性OLED面板制程，在图案化形成阳极层时，在非发光区制作触控线路用的触控连接线，并将原本是整面蒸镀形成阴极层，改变为采用精细掩膜板蒸镀形成图案化的阴极层，在阴极层中制作触控电极，并让触控电极与触控连接线接触，从而完成触控传感器结构，通过将触控传感器整合进柔性面板当中，能够有效减少面板内贴合次数，减薄面板的整体厚度，增加面板的弯折性，从而提升良率，且制作方法简单。
为了能更进一步了解本发明的特征以及技术内容，请参阅以下有关本发明的详细说明与附图，然而附图仅提供参考与说明用，并非用来对本发明加以限制。
附图说明
下面结合附图，通过对本发明的具体实施方式详细描述，将使本发明的技术方案及其它有益效果显而易见。
附图中，
图1为现有一种跨桥式电容式触控结构的俯视状态示意图；
图2为现有一种柔性触控结构的示意图；
图3为本发明柔性内嵌式触控结构第一实施例的俯视状态示意图；
图4为本发明柔性内嵌式触控结构第二实施例的俯视状态示意图；
图5为本发明柔性内嵌式触控结构的制作方法的流程示意图；
图6-7为本发明柔性内嵌式触控结构的制作方法的步骤1的示意图；
图8-9为本发明柔性内嵌式触控结构的制作方法的步骤2的示意图；
图10-11为本发明柔性内嵌式触控结构的制作方法的步骤3的示意图；
图12为本发明柔性内嵌式触控结构的制作方法的步骤4的示意图；
图13为本发明柔性内嵌式触控结构的制作方法的步骤5的示意图；
图14为本发明柔性内嵌式触控结构的制作方法的步骤6的示意图及本发明柔性内嵌式触控结构的示意图。
具体实施方式
为更进一步阐述本发明所采取的技术手段及其效果，以下结合本发明的优选实施例及其附图进行详细描述。
请参阅图14，本发明提供一种柔性内嵌式触控结构，主要包括TFT基板10、设于TFT基板10上平坦层40、设于TFT基板10及平坦层40上的OLED触控层20、以及设于OLED触控层20上的封装层30。本发明提出将触控传感器整合进柔性面板当中的技术，可减少贴合次数提升良率，并有效减薄面板整体厚度，增加弯折性。
进一步，请参阅图3，图3为本发明柔性内嵌式触控结构第一实施例的俯视状态示意图，该图3中省略了TFT基板10、平坦层40等结构，以清楚表达本实施例中触控传感器的结构，本实施例中，所述OLED触控层20包括：设于所述TFT基板10上的阳极层21、设于所述平坦层40及阳极层21上的像素定义层22、设于阳极层21上的发光层23、以及设于像素定义层22及发光层23上的阴极层24；
所述像素定义层22在阳极层21上围出数个阵列排布的像素开口225，所述阳极层21包括与所述像素开口225对应设置的数个阳极单元211、及位于所述像素定义层22下方与阳极单元211间隔的数个触控连接线212，所述发光层23设于所述像素开口225内；
所述像素定义层22在所述触控连接线212上方设有数个过孔221；所述阴极层24包括数个触控电极241，所述数个触控电极241分别通过所述数个过孔221与所述触控连接线212相连接，从而构成触控传感器结构25；
所述阴极层24覆盖所述数个像素开口225，每一像素开口225内的发光层23、其下方对应的阳极单元211、及其上方对应的阴极层24共同构成一OLED单元结构D。
进一步地，本实施例中，所述触控传感器结构25为跨桥式电容式触控传感器结构，所述数个触控电极241包括阵列排布的数个第一触控电极部2411、位于所述数个第一触控电极部2411之间的阵列排布的数个第二触控电极部2412、及用于将上下相邻的两第一触控电极部2411电连接的数个连接部2413；
所述触控连接线212用作跨桥式电容式触控传感器结构中的桥体，用于将左右相邻的两第二触控电极部2412电连接。
具体地，所述数个触控电极241覆盖所述数个像素开口225中的一部分，所述阴极层24还包括位于数个触控电极241之间的数个补充电极242，所述数个补充电极242覆盖所述数个像素开口225中剩余的一部分；所述第一触控电极部2411及第二触控电极部2412均为菱形。
具体地，所述阳极单元211穿过所述平坦层40与所述TFT基板10相连接。
具体地，所述发光层23包括由下至上依次形成的空穴注入层、空穴传输层、有机发光层、电子传输层和电子注入层。
请参阅图4，图4为本发明柔性内嵌式触控结构第二实施例的俯视状态示意图，该图4中同样省略了TFT基板10、平坦层40等结构，以清楚表达本实施例中的触控传感器结构25，本实施例与上述第一实施例相比，所述触控传感器结构25为自容式触控传感器结构，所述触控连接线212用作自容式触控传感器结构中的信号线。
具体地，所述数个触控电极241均为长方形，所述数个触控电极241覆盖所述数个像素开口225。
本发明的柔性内嵌式触控结构，通过将触控传感器整合进柔性面板当中，能够有效减少面板内贴合次数，减薄面板的整体厚度，增加面板的弯折性，从而提升良率，相对于现有柔性OLED面板，只需改变阴极层24及阳极层21的图形设计，在阳极层21中在非发光区域制作形成触控连接线212，在阴极层24中制作形成触控电极241，其中，触控电极241与触控连接线212的图案，根据预形成的触控传感器结构25的类型来确定，例如跨桥式电容式触控传感器、或自容式触控传感器，制作方法简单。
请参阅图5，基于上述的柔性内嵌式触控结构，本发明还提供一种柔性内嵌式触控结构的制作方法，包括如下步骤：
步骤1、如图6-7所示，提供一TFT基板10，在所述TFT基板10上形成一有机材料膜400，对所述有机材料膜400进行图案化处理，得到平坦层40。
步骤2、如图8-9所示，在所述TFT基板10及平坦层40上沉积形成第一导电层210，对所述第一导电层210进行图案化处理，得到阳极层21，所述阳极层21包括数个间隔排布的阳极单元211、及设于所述数个阳极单元211之间的数个触控连接线212。
具体地，所述阳极单元211穿过所述平坦层40与所述TFT基板10相 连接。
步骤3、如图10-11所示，在所述平坦层40及阳极层21上形成一隔离层220，对所述隔离层220进行图案化处理，得到像素定义层22，所述像素定义层22在阳极层21上对应所述数个阳极单元211围出数个阵列排布的像素开口225，且所述像素定义层22在所述触控连接线212上方具有数个过孔221。
步骤4、如图12所示，在所述像素定义层22在所述阳极层21上所围出的像素开口225内形成发光层23。
具体地，所述发光层23包括由下至上依次形成的空穴注入层、空穴传输层、有机发光层、电子传输层和电子注入层。
具体地，所述步骤4中采用第二精细掩膜板600在所述阳极层21上形成发光层23。
步骤5、如图13所示，提供第一精细掩膜板500，以所述第一精细掩膜板500为遮蔽层，在所述像素定义层22及发光层23上蒸镀形成图案化的阴极层24，得到包括阳极层21、像素定义层22、发光层23、以及阴极层24的OLED触控层20。
具体地，所述阴极层24包括数个触控电极241，所述数个触控电极241分别通过所述数个过孔221与所述触控连接线212相连接，从而构成触控传感器结构25；且所述阴极层24覆盖所述数个像素开口225，每一像素开口225内的发光层23、其下方对应的阳极单元211、及其上方对应的阴极层24共同构成一OLED单元结构D。
步骤6、如图14所示，在所述像素定义层22及阴极层24上形成封装层30，完成柔性内嵌式触控结构的制作。
具体地，所述触控传感器结构25可以为跨桥式电容式触控传感器结构，所述数个触控电极241包括阵列排布的数个第一触控电极部2411、位于所述数个第一触控电极部2411之间的阵列排布的数个第二触控电极部2412、及用于将上下相邻的两第一触控电极部2411电连接的数个连接部2413；所述触控连接线212用作跨桥式电容式触控传感器结构中的桥体，用于将左右相邻的两第二触控电极部2412电连接。所述数个触控电极241覆盖所述数个像素开口225中的一部分，所述阴极层24还包括位于数个触控电极241之间的数个补充电极242，所述数个补充电极242覆盖所述数个像素开口225中剩余的一部分；所述第一触控电极部2411及第二触控电极部2412均为菱形。或者，
所述触控传感器结构25也可以为自容式触控传感器结构，所述触控连 接线212用作自容式触控传感器结构中的信号线。所述数个触控电极241均为长方形，所述数个触控电极241覆盖所述数个像素开口225。
本发明的柔性内嵌式触控结构的制作方法，相对于现有柔性OLED面板制程，在图案化形成阳极层21时，在非发光区制作触控线路用的触控连接线212，并将原本是整面蒸镀形成阴极层，改变为采用精细掩膜板蒸镀形成图案化的阴极层24，即在制作阴极层24时仅需将蒸镀用的普通金属掩膜板(Common metal mask，CMM)改为精细金属掩膜板(Fine metal mask，FMM)，在阴极层24中制作触控电极241，并在蒸镀时让触控电极241与触控连接线212接触，从而完成触控传感器结构25，其中，触控电极241与触控连接线212的图案，根据预形成的触控传感器结构25类型来确定，例如跨桥式电容式触控传感器、或自容式触控传感器，从而通过将触控传感器整合进柔性面板当中，能够有效减少面板内贴合次数提升良率，减薄面板的整体厚度，增加面板的弯折性，且制作方法简单。
综上所述，本发明提供的一种柔性内嵌式触控结构，包括TFT基板、平坦层、OLED触控层、以及封装层；所述OLED触控层包括阳极层、像素定义层、发光层、以及阴极层；所述阳极层包括数个阳极单元、及数个触控连接线，所述数个触控连接线对应位于所述像素定义层下方；所述阴极层包括数个触控电极，所述数个触控电极分别通过像素定义层上的数个过孔与所述触控连接线相连接，从而构成触控传感器结构；本发明通过将触控传感器整合进柔性面板当中，能够有效减少面板内贴合次数，减薄面板的整体厚度，增加面板的弯折性，从而提升良率，相对于现有柔性OLED面板，只需改变阴极层及阳极层的图形设计，制作方法简单。本发明提供的一种柔性内嵌式触控结构的制作方法，相对于现有柔性OLED面板制程，在图案化形成阳极层时，在非发光区制作触控线路用的触控连接线，并将原本是整面蒸镀形成阴极层，改变为采用精细掩膜板蒸镀形成图案化的阴极层，在阴极层中制作触控电极，并让触控电极与触控连接线接触，从而完成触控传感器结构，通过将触控传感器整合进柔性面板当中，能够有效减少面板内贴合次数，减薄面板的整体厚度，增加面板的弯折性，从而提升良率，且制作方法简单。
以上所述，对于本领域的普通技术人员来说，可以根据本发明的技术方案和技术构思作出其他各种相应的改变和变形，而所有这些改变和变形都应属于本发明权利要求的保护范围。

Claims (11)

  1. 一种柔性内嵌式触控结构，包括：TFT基板、设于TFT基板上平坦层、设于TFT基板及平坦层上的OLED触控层、以及设于OLED触控层上的封装层；
    所述OLED触控层包括：设于所述TFT基板上的阳极层、设于所述平坦层及阳极层上的像素定义层、设于阳极层上的发光层、以及设于像素定义层及发光层上的阴极层；
    所述像素定义层在阳极层上围出数个阵列排布的像素开口，所述阳极层包括与所述像素开口对应设置的数个阳极单元、及位于所述像素定义层下方与阳极单元间隔的数个触控连接线，所述发光层设于所述像素开口内；
    所述像素定义层在所述触控连接线上方设有数个过孔；所述阴极层包括数个触控电极，所述数个触控电极分别通过所述数个过孔与所述触控连接线相连接，从而构成触控传感器结构；
    所述阴极层覆盖所述数个像素开口，每一像素开口内的发光层、其下方对应的阳极单元、及其上方对应的阴极层共同构成一OLED单元结构。
  2. 如权利要求1所述的柔性内嵌式触控结构，其中，所述触控传感器结构为跨桥式电容式触控传感器结构，所述数个触控电极包括数个第一触控电极部、位于所述数个第一触控电极部之间的数个第二触控电极部、及用于将相邻两第一触控电极部电连接的数个连接部；
    所述触控连接线用作跨桥式电容式触控传感器结构中的桥体，用于将相邻两第二触控电极部电连接。
  3. 如权利要求1所述的柔性内嵌式触控结构，其中，所述触控传感器结构为自容式触控传感器结构，所述触控连接线用作自容式触控传感器结构中的信号线。
  4. 如权利要求2所述的柔性内嵌式触控结构，其中，所述数个触控电极覆盖所述数个像素开口中的一部分，所述阴极层还包括位于数个触控电极之间的数个补充电极，所述数个补充电极覆盖所述数个像素开口中剩余的一部分；
    所述第一触控电极部及第二触控电极部均为菱形。
  5. 如权利要求3所述的柔性内嵌式触控结构，其中，所述数个触控电极均为长方形，所述数个触控电极覆盖所述数个像素开口。
  6. 一种柔性内嵌式触控结构的制作方法，包括如下步骤：
    步骤1、提供一TFT基板，在所述TFT基板上形成一有机材料膜，对所述有机材料膜进行图案化处理，得到平坦层；
    步骤2、在所述TFT基板及平坦层上沉积形成第一导电层，对所述第一导电层进行图案化处理，得到阳极层，所述阳极层包括数个间隔排布的阳极单元、及设于所述数个阳极单元之间的数个触控连接线；
    步骤3、在所述平坦层及阳极层上形成一隔离层，对所述隔离层进行图案化处理，得到像素定义层，所述像素定义层在阳极层上对应所述数个阳极单元围出数个阵列排布的像素开口，且所述像素定义层在所述触控连接线上方具有数个过孔；
    步骤4、在所述像素定义层在所述阳极层上所围出的像素开口内形成发光层；
    步骤5、提供第一精细掩膜板，以所述第一精细掩膜板为遮蔽层，在所述像素定义层及发光层上蒸镀形成图案化的阴极层，得到包括阳极层、像素定义层、发光层、以及阴极层的OLED触控层；
    所述阴极层包括数个触控电极，所述数个触控电极分别通过所述数个过孔与所述触控连接线相连接，从而构成触控传感器结构；且所述阴极层覆盖所述数个像素开口，每一像素开口内的发光层、其下方对应的阳极单元、及其上方对应的阴极层共同构成一OLED单元结构；
    步骤6、在所述像素定义层及阴极层上形成封装层。
  7. 如权利要求6所述的柔性内嵌式触控结构的制作方法，其中，所述触控传感器结构为跨桥式电容式触控传感器结构，所述数个触控电极包括数个第一触控电极部、位于所述数个第一触控电极部之间的数个第二触控电极部、及用于将相邻两第一触控电极部电连接的数个连接部；
    所述触控连接线用作跨桥式电容式触控传感器结构中的桥体，用于将相邻两第二触控电极部电连接。
  8. 如权利要求6所述的柔性内嵌式触控结构的制作方法，其中，所述触控传感器结构为自容式触控传感器结构，所述触控连接线用作自容式触控传感器结构中的信号线。
  9. 如权利要求7所述的柔性内嵌式触控结构的制作方法，其中，所述数个触控电极覆盖所述数个像素开口中的一部分，所述阴极层还包括位于数个触控电极之间的数个补充电极，所述数个补充电极覆盖所述数个像素开口中剩余的一部分；
    所述第一触控电极部及第二触控电极部均为菱形。
  10. 如权利要求8所述的柔性内嵌式触控结构的制作方法，其中，所 述数个触控电极均为长方形，所述数个触控电极覆盖所述数个像素开口。
  11. 一种柔性内嵌式触控结构的制作方法，包括如下步骤：
    步骤1、提供一TFT基板，在所述TFT基板上形成一有机材料膜，对所述有机材料膜进行图案化处理，得到平坦层；
    步骤2、在所述TFT基板及平坦层上沉积形成第一导电层，对所述第一导电层进行图案化处理，得到阳极层，所述阳极层包括数个间隔排布的阳极单元、及设于所述数个阳极单元之间的数个触控连接线；
    步骤3、在所述平坦层及阳极层上形成一隔离层，对所述隔离层进行图案化处理，得到像素定义层，所述像素定义层在阳极层上对应所述数个阳极单元围出数个阵列排布的像素开口，且所述像素定义层在所述触控连接线上方具有数个过孔；
    步骤4、在所述像素定义层在所述阳极层上所围出的像素开口内形成发光层；
    步骤5、提供第一精细掩膜板，以所述第一精细掩膜板为遮蔽层，在所述像素定义层及发光层上蒸镀形成图案化的阴极层，得到包括阳极层、像素定义层、发光层、以及阴极层的OLED触控层；
    所述阴极层包括数个触控电极，所述数个触控电极分别通过所述数个过孔与所述触控连接线相连接，从而构成触控传感器结构；且所述阴极层覆盖所述数个像素开口，每一像素开口内的发光层、其下方对应的阳极单元、及其上方对应的阴极层共同构成一OLED单元结构；
    步骤6、在所述像素定义层及阴极层上形成封装层；
    其中，所述触控传感器结构为跨桥式电容式触控传感器结构，所述数个触控电极包括数个第一触控电极部、位于所述数个第一触控电极部之间的数个第二触控电极部、及用于将相邻两第一触控电极部电连接的数个连接部；
    所述触控连接线用作跨桥式电容式触控传感器结构中的桥体，用于将相邻两第二触控电极部电连接；
    其中，所述数个触控电极覆盖所述数个像素开口中的一部分，所述阴极层还包括位于数个触控电极之间的数个补充电极，所述数个补充电极覆盖所述数个像素开口中剩余的一部分；
    所述第一触控电极部及第二触控电极部均为菱形。
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