WO2018152885A1 - 一种量子点电致发光器件及其制作方法 - Google Patents

一种量子点电致发光器件及其制作方法 Download PDF

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WO2018152885A1
WO2018152885A1 PCT/CN2017/076556 CN2017076556W WO2018152885A1 WO 2018152885 A1 WO2018152885 A1 WO 2018152885A1 CN 2017076556 W CN2017076556 W CN 2017076556W WO 2018152885 A1 WO2018152885 A1 WO 2018152885A1
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layer
quantum dot
hole injection
injection layer
anode
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PCT/CN2017/076556
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English (en)
French (fr)
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周凯锋
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深圳市华星光电技术有限公司
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Priority to US15/523,115 priority Critical patent/US10615357B2/en
Publication of WO2018152885A1 publication Critical patent/WO2018152885A1/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H10K50/115—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising active inorganic nanostructures, e.g. luminescent quantum dots
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/14—Carrier transporting layers
    • H10K50/15—Hole transporting layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/14—Carrier transporting layers
    • H10K50/16—Electron transporting layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/17—Carrier injection layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/81—Anodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/82—Cathodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2101/00—Properties of the organic materials covered by group H10K85/00
    • H10K2101/30—Highest occupied molecular orbital [HOMO], lowest unoccupied molecular orbital [LUMO] or Fermi energy values
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2101/00—Properties of the organic materials covered by group H10K85/00
    • H10K2101/40—Interrelation of parameters between multiple constituent active layers or sublayers, e.g. HOMO values in adjacent layers

Definitions

  • the present invention belongs to the field of display technologies, and in particular, to a quantum dot electroluminescent device and a method for fabricating the same.
  • QLED Quantum Dots Light-Emitting Diode
  • OLED Organic Light-Emitting Diode
  • Quantum dot materials can change surface ligands and are easily soluble in a variety of solvents, making them ideal for low cost solution processing.
  • PEDOT: PSS a commercial hole injection layer material, is widely used in solution processing type QLED devices to provide excellent performance.
  • PEDOT:PSS has a pH of between 1 and 3 at room temperature and is acidic.
  • the present invention provides a quantum dot electroluminescent device and a method of fabricating the same, for regulating anode hole injection concentration and improving stability and lifetime of the device.
  • a quantum dot electroluminescent device comprising:
  • An anode disposed on the substrate
  • a first hole injecting layer which is a neutral hole injecting layer, is disposed on the anode;
  • a quantum dot emitting layer disposed on the second hole injecting layer
  • a cathode is disposed on the quantum dot emitting layer.
  • the second hole injection layer is an acidic hole injection layer.
  • the material HOMO level of the first hole injection layer is between the material HOMO level of the anode and the material HOMO level of the quantum dot light-emitting layer.
  • the material of the first hole injection layer comprises PTPDES, PTPDES: TBPAH, PFO-co-NEPBN or PFO-co-NEPBN: F4-TCNQ.
  • the material of the second hole injection layer comprises PEDOT:PSS.
  • a hole transport layer is further disposed between the second hole injection layer and the quantum dot light-emitting layer.
  • an electron transport layer is further disposed between the quantum dot light emitting layer and the cathode.
  • a quantum dot electroluminescent device comprising:
  • a cathode is formed on the quantum dot light-emitting layer.
  • the method further includes forming a hole transport layer on the second hole injection layer before forming the quantum dot light-emitting layer.
  • the method further includes forming an electron transport layer on the quantum dot light-emitting layer before forming the cathode.
  • the present invention can prevent the anode ITO from being directly corroded by contact with the acidic PEDOT:PSS.
  • the invention can also adjust the concentration of the anode hole injection, which can not only improve the stability and the life of the device, but also solve the problem that the device has a faster roll-off under high current. question.
  • FIG. 1 is a schematic structural view of a quantum dot electroluminescent device in the prior art
  • FIG. 2 is a schematic structural view of a quantum dot electroluminescent device according to an embodiment of the present invention.
  • FIG. 3 is a flow chart for fabricating a quantum dot electroluminescent device in accordance with an embodiment of the present invention.
  • FIG. 1 is a schematic structural view of a quantum dot electroluminescent device in the prior art, which includes an anode 11 disposed in order from bottom to top, a hole injection layer 12, a hole transport layer 13, and a quantum dot light emitting layer. 14. Electron transport layer 15 and cathode 16.
  • the anode 11 is generally an ITO anode and is disposed on the substrate 10.
  • the hole injection layer 12 is generally made of PEDOT:PSS material and is acidic, which corrodes the anode 11 and affects the performance of the quantum dot electroluminescent device.
  • the present invention provides a quantum dot electroluminescent device, as shown in FIG. 2, which is a schematic structural view of a quantum dot electroluminescent device according to an embodiment of the present invention.
  • FIG. 2 is a schematic structural view of a quantum dot electroluminescent device according to an embodiment of the present invention. The present invention will be described in detail below with reference to FIG.
  • the device includes an anode 21, a first hole injection layer 27, a second hole injection layer 22, a quantum dot light-emitting layer 24, and a cathode 26 which are disposed in this order from bottom to top.
  • the anode 21 is disposed on the substrate 20 and is generally made of ITO (Indium Tin Oxide) material for outputting holes.
  • the first hole injection layer 27 is a neutral hole injection layer and is disposed on On the anode 21, the injection concentration of holes can be regulated.
  • the second hole injection layer 22 is disposed on the first hole injection layer 27 to facilitate injection of holes into the quantum dot light-emitting layer 24.
  • the quantum dot light-emitting layer 24 is disposed on the second hole injection layer 22 for light emission.
  • the cathode 26 is disposed on the quantum dot light-emitting layer 24 for outputting electrons by the vector sub-dot light-emitting layer 24 to cause the quantum dot light-emitting layer 24 to emit light under the action of holes and electrons.
  • the neutral first hole injecting layer 27 by adding a neutral first hole injecting layer 27, and placing the first hole injecting layer 27 between the anode 21 and the second hole injecting layer 23, by regulating the first hole injecting layer
  • the material of 27 can regulate the concentration of holes injected.
  • the neutral first hole injection layer 27 can prevent the anode 21 from being corroded by the second hole injection layer 22.
  • a hole transport layer 23 is further disposed between the second hole injection layer 22 and the quantum dot light-emitting layer 24, as shown in FIG.
  • the holes output from the anode 21 pass through the first hole injection layer 27 and the second hole injection layer 22, and are then transported to the quantum dot light-emitting layer 24 via the hole transport layer 23.
  • an electron transport layer 25 is also disposed between the quantum dot luminescent layer 24 and the cathode 26, as shown in FIG.
  • the electrons output from the cathode 26 are transmitted to the quantum dot light-emitting layer 24 via the electron transport layer 25.
  • the second hole injection layer 22 is an acidic hole injection layer.
  • the second hole injection layer 22 is provided as an acidic hole injection layer, which facilitates the transport of holes to the hole transport layer 23, but its acidity corrodes the anode 21.
  • the neutral first hole injection layer 27 disposed between the anode 21 and the second hole injection layer 23 prevents the second hole injection layer 23 from corroding the anode 21. Therefore, the material of the neutral second hole injection layer 27 is required to be dissolved in an organic solvent, but is not limited to an organic material, and is not affected by the acidic second hole injection layer 22, and has hole injection characteristics.
  • the material of the second hole injection layer 22 includes PEDOT:PSS, that is, the second hole injection layer 22 is acidic PEDOT:PSS.
  • PEDOT: PSS is a high molecular polymer, and its aqueous solution has a high conductivity. According to different formulations, an aqueous solution having a different conductivity can be obtained.
  • PEDOT: PSS consists of two substances, PEDOT and PSS, PEDOT is a polymer of EDOT (3,4-ethylenedioxythiophene monomer), and PSS is a polystyrene sulfonate. The combination of these two substances can greatly improve the solubility of PEDOT and can be used to transport holes.
  • the material used as the second hole injection layer 22 of the present invention is not limited thereto, and other materials capable of transporting holes are also suitable for the present invention.
  • the material HOMO (Highest Occupied Molecular) level of the first hole injection layer 27 is set to be between the material HOMO level of the anode 21 and the quantum dot emitting layer. 24 materials between HOMO levels, making the anode 21, the first empty The hole injection layer 27 and the quantum dot light-emitting layer 24 have the same HOMO energy level difference. Thus, it is advantageous for the anode 21 vector sub-dot light-emitting layer 24 to transport holes.
  • the material of the first hole injection layer 27 comprises PTPDES, PTPDES: TBPAH, PFO-co-NEPBN or PFO-co-NEPBN: F4-TCNQ. These materials can be used to form the first hole injecting layer 27, which can be obtained by laboratory routine experimentation.
  • PTPDES tetraphenyldiamine-containing poly arylene ether sulfone
  • TPBAH is a P-doped composition of PTPDES
  • TBPAH tris(4-bromophenyl)aminium hexachloroantimonate, 3(4-bromophenyl)ammonium hexachloroantimonate
  • P doping can be performed.
  • PFO-co-NEPBN poly(9,9-dioctylfluorene-co-bis-N,N-(4-ethoxycarbonylphenyl)-bis-N,N-phenyl benzidine
  • poly(9,9-dioctylfluorene-co-) Bis-N,N-(4-ethoxycarbonylphenyl)-bis-N,N-phenylbenzidine is a polyfluorene-based copolymer with hole transport properties and can be used as a hole transporting material.
  • F4-TCNQ is a P-doped composition of PFO-co-NEPBN, F4-TCNQ (2,3,5,6-Tetrafluoro-7,7,8,8-tetracyanoquinodimethane, 2,3 , 5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane) is a small molecule P-type dopant that can be P-doped.
  • the present invention can prevent the anode ITO from being directly corroded by contact with the acidic PEDOT:PSS.
  • the invention can also adjust the concentration of the anode hole injection, which can not only improve the stability and the life of the device, but also solve the problem that the efficiency of the device rolling off rapidly under high current.
  • an anode is formed on a substrate. Specifically, an anode 21 such as an ITO anode is formed on the substrate 20.
  • a neutral first hole injection layer 27 is formed on the anode.
  • a neutral first hole injecting layer 27 is formed by a solution deposition method. Specifically, spin coating and heat treatment were used to form a first hole injecting layer 27 having a thickness of 20 nm.
  • the first hole injecting layer 27 is an organic material dissolved in an organic solvent and has a neutral characteristic for planarizing the surface of the ITO anode while improving the hole injecting characteristics of the anode.
  • the material for forming the first hole injecting layer includes any one of PTPDES, PTPDES: TBPAH, PFO-co-NEPBN, or PFO-co-NEPBN: F4-TCNQ. And the above four materials Both can be obtained by conventional experimental means.
  • a second hole injection layer 22 is formed on the first hole injection layer 27.
  • the second hole injection layer 22 is formed by a solution deposition method.
  • the second hole injection layer 22 is an acidic hole injection layer, and the material used to form the second hole injection layer 22 includes PEDOT:PSS.
  • a hole transport layer 23 is formed on the second hole injection layer 22.
  • the hole transport layer 23 is formed by a solution deposition method. Specifically, spin coating and heat treatment were used to form a hole transport layer 24 having a thickness of 30 nm.
  • the quantum dot light-emitting layer 24 is formed on the hole transport layer 23.
  • the quantum dot light-emitting layer 24 is formed by a solution deposition method. Specifically, spin coating and heat treatment were used to form a quantum dot light-emitting layer 24 having a thickness of 20 nm.
  • an electron transport layer 25 is formed on the quantum dot light-emitting layer 24.
  • the electron transport layer 25 is formed by a solution deposition method. Specifically, spin coating and heat treatment were used to form an electron transport layer 25 having a thickness of 30 nm.
  • a cathode 26 is formed on the electron transport layer 25. Specifically, a 100 nm AL cathode was formed by a vacuum evaporation method. After the cathode 26 is formed, the quantum dot electroluminescent device can be packaged.
  • the present invention may also form the layers by other methods than the solution deposition method, and the present invention is not limited thereto.
  • the surface of the first hole injection layer 27 is further subjected to a hydrophilic treatment.
  • O 2 Plasma oxygen plasma
  • the second hole injection layer 22 is water-soluble using PEDOT:PSS, it is difficult to form a film directly on the first hole injection layer 27.
  • hydrophilic treatment of the first hole injection layer 27 the surface hydrophilicity of the first hole injection layer 27 can be improved, and the contact angle can be reduced, so that PEDOT:PSS is uniformly formed on the first hole injection layer 27.

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  • Engineering & Computer Science (AREA)
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Abstract

提供了一种量子点电致发光器件及其制作方法，该器件包括：阳极(21)，设置于基底(20)上；第一空穴注入层(27)，为中性空穴注入层，设置于所述阳极(21)上；第二空穴注入层(22)，设置于所述第一空穴注入层(27)上；量子点发光层(24)，设置于所述第二空穴注入层(22)上；阴极(26)，设置于所述量子点发光层(24)上。

Description

一种量子点电致发光器件及其制作方法
相关申请的交叉引用
本申请要求享有2017年2月24日提交的名称为“一种量子点电致发光器件及其制作方法”的中国专利申请CN201710102352.1的优先权，该申请的全部内容通过引用并入本文中。
技术领域
本发明属于显示技术领域，具体地说，尤其涉及一种量子点电致发光器件及其制作方法。
背景技术
QLED(Quantum Dots Light-Emitting Diode，量子点电致发光器件)与OLED(Organic Light-Emitting Diode，有机发光二极管)一样可以主动发光，具有响应速度快、视角广、轻薄、低功耗等优点，但其色纯度更高，应用于显示器可显示更广色域。量子点材料可以改变表面配体，易溶于多种溶剂中，非常适合低成本的溶液加工工艺。
PEDOT：PSS作为一种商业化空穴注入层材料，被广泛用于溶液加工型QLED器件中，使得器件具有优异的性能。但是，PEDOT：PSS在常温下PH值介于1～3之间，呈酸性特征。
相关研究表明，酸性的PEDOT：PSS会造成阳极界面的不稳定，降低器件使用寿命。这主要是因为ITO(IndiumTinOxide，氧化铟锡)中的In2O3(Indium(III)oxide，氧化铟)成分会在酸性环境下溶解，导致ITO中的铟发生迁移进入PEDOT：PSS中增加空穴注入势垒。如果铟扩散到量子发光层，则会造成激子的淬灭，从而导致器件效率和寿命的大幅下降。
发明内容
为解决以上问题，本发明提供了一种量子点电致发光器件及其制作方法，用于调控阳极空穴注入浓度并提高器件的稳定性和寿命。
根据本发明的一个方面，提供了一种量子点电致发光器件，包括：
阳极，设置于基底上；
第一空穴注入层，为中性空穴注入层，设置于所述阳极上；
第二空穴注入层，设置于所述第一空穴注入层上；
量子点发光层，设置于所述第二空穴注入层上；
阴极，设置于所述量子点发光层上。
根据本发明的一个实施例，所述第二空穴注入层为酸性空穴注入层。
根据本发明的一个实施例，所述第一空穴注入层的材料HOMO能级介于所述阳极的材料HOMO能级与所述量子点发光层的材料HOMO能级之间。
根据本发明的一个实施例，所述第一空穴注入层的材料包括PTPDES、PTPDES:TPBAH、PFO-co-NEPBN或PFO-co-NEPBN:F4-TCNQ。
根据本发明的一个实施例，所述第二空穴注入层的材料包括PEDOT：PSS。
根据本发明的一个实施例，在所述第二空穴注入层和所述量子点发光层之间还设置有空穴传输层。
根据本发明的一个实施例，在所述量子点发光层和所述阴极之间还设置有电子传输层。
根据本发明的另一个方面，还提供了一种用于制作量子点电致发光器件的方法，包括：
在基底上形成阳极；
在所述阳极上形成中性第一空穴注入层；
在所述第一空穴注入层上形成第二空穴注入层；
在所述第二空穴注入层上形成量子点发光层；
在所述量子点发光层上形成阴极。
根据本发明的一个实施例，还包括在形成所述量子点发光层之前，在所述第二空穴注入层上形成空穴传输层。
根据本发明的一个实施例，还包括在形成所述阴极之前，在所述量子点发光层上形成电子传输层。
本发明的有益效果：
本发明通过设计双层空穴注入结构，可以防止阳极ITO直接与酸性PEDOT：PSS接触而被腐蚀。同时，本发明还可以调控阳极空穴注入浓度，既可以提高器件的稳定性和寿命，又可以解决器件在高电流下效率滚降较快的问 题。
本发明的其他优点、目标，和特征在某种程度上将在随后的说明书中进行阐述，并且在某种程度上，基于对下文的考察研究对本领域技术人员而言将是显而易见的，或者可以从本发明的实践中得到教导。本发明的目标和其他优点可以通过下面的说明书，权利要求书，以及附图中所特别指出的结构来实现和获得。
附图说明
附图用来提供对本申请的技术方案或现有技术的进一步理解，并且构成说明书的一部分。其中，表达本申请实施例的附图与本申请的实施例一起用于解释本申请的技术方案，但并不构成对本申请技术方案的限制。
图1是现有技术中一种量子点电致发光器件的结构示意图；
图2是根据本发明的一个实施例的量子点电致发光器件的结构示意图；
图3是根据本发明的一个实施例的用于制作量子点电致发光器件的流程图。
具体实施方式
以下将结合附图及实施例来详细说明本发明的实施方式，借此对本发明如何应用技术手段来解决技术问题，并达成相应技术效果的实现过程能充分理解并据以实施。本申请实施例以及实施例中的各个特征，在不相冲突前提下可以相互结合，所形成的技术方案均在本发明的保护范围之内。
如图1所示为现有技术中一种量子点电致发光器件的结构示意图，该器件包括由下至上依次设置的阳极11、空穴注入层12、空穴传输层13、量子点发光层14、电子传输层15和阴极16。其中，阳极11一般为ITO阳极，设置于基底10上。空穴注入层12一般采用PEDOT:PSS材料，为酸性，会腐蚀阳极11，影响量子点电致发光器件的性能。
因此，本发明提供了一种量子点电致发光器件，如图2所示为根据本发明的一个实施例的量子点电致发光器件结构示意图，以下参考图2来对本发明进行详细说明。
如图2所示，该器件包括由下至上依次设置的阳极21、第一空穴注入层27、第二空穴注入层22、量子点发光层24和阴极26。
其中，阳极21设置于基底20上，一般采用ITO(IndiumTinOxide，氧化铟锡)材料制成，用于输出空穴。第一空穴注入层27为中性空穴注入层，设置于 阳极21上，可以调控空穴的注入浓度。第二空穴注入层22，设置于第一空穴注入层27上，有利于将空穴注入量子点发光层24。量子点发光层24设置于第二空穴注入层22上，用于发光。阴极26设置于量子点发光层24上，用于向量子点发光层24输出电子，以使得量子点发光层24在空穴和电子的作用下发光。
在本发明中，通过增加中性第一空穴注入层27，并且将该第一空穴注入层27设置于阳极21和第二空穴注入层23之间，通过调控第一空穴注入层27的材料可以调控空穴的注入浓度。并且，在第二空穴注入层22由非中性材料制成时，中性第一空穴注入层27可以防止阳极21被第二空穴注入层22腐蚀。
在本发明的一个实施例中，在第二空穴注入层22和量子点发光层24之间还设置有空穴传输层23，如图2所示。阳极21输出的空穴经第一空穴注入层27和第二空穴注入层22之后，经空穴传输层23传输至量子点发光层24。
在本发明的一个实施例中，在量子点发光层24和阴极26之间还设置有电子传输层25，如图2所示。阴极26输出的电子经电子传输层25传输至量子点发光层24。
在本发明的一个实施例中，该第二空穴注入层22为酸性空穴注入层。将该第二空穴注入层22设置为酸性空穴注入层，有利于向空穴传输层23输送空穴，但其酸性会腐蚀阳极21。设置于阳极21和第二空穴注入层23之间的中性第一空穴注入层27，会防止第二空穴注入层23腐蚀阳极21。因此，要求中性第二空穴注入层27的材料溶于有机溶剂但不限于有机材料，并且不受酸性的第二空穴注入层22的影响，具有空穴注入特性。
在本发明的一个实施例中，该第二空穴注入层22的材料包括PEDOT：PSS，即该第二空穴注入层22为酸性PEDOT：PSS。PEDOT：PSS是一种高分子聚合物，其配置的水溶液导电率很高，根据不同的配方，可以得到导电率不同的水溶液。PEDOT：PSS由PEDOT和PSS两种物质构成，PEDOT是EDOT(3，4-乙撑二氧噻吩单体)的聚合物，PSS是聚苯乙烯磺酸盐。这两种物质在组合一起，可以极大提高PEDOT的溶解性，可用来输送空穴。当然，本发明用作第二空穴注入层22的材料不限于此，其他可输送空穴的材料也适用于本发明。
由于第一空穴注入层27设置于阳极21和第二空穴注入层23之间，用以输送空穴。因此，在本发明的一个实施例中，将第一空穴注入层27的材料HOMO(Highest Occupied Molecular，最高已占轨道)能级设置为介于阳极21的材料HOMO能级与量子点发光层24的材料HOMO能级之间，使得阳极21、第一空 穴注入层27和量子点发光层24之间具有变化趋势相同的HOMO能级差。这样，有利于阳极21向量子点发光层24输送空穴。
在本发明的一个实施例中，该第一空穴注入层27的材料包括PTPDES、PTPDES:TPBAH、PFO-co-NEPBN或PFO-co-NEPBN:F4-TCNQ。这些材料均可以用来制作第一空穴注入层27，可以通过实验室常规实验手段获得。
其中，PTPDES(tetraphenyldiamine-containing poly arylene ether sulfone，含四苯基二胺的聚芳醚砜聚合物)是一种聚芳醚砜型高分子材料，具有空穴传输特性，可作为量子点发光器件的空穴传输材料。PTPDES:TPBAH为PTPDES的P掺杂组合物，TPBAH(tris(4-bromophenyl)aminium hexachloroantimonate，3(4-溴苯基)铵六氯锑酸盐)是一种溴苯基盐类的电子受体，可进行P掺杂。
PFO-co-NEPBN(poly(9,9-dioctylfluorene-co-bis-N,N-(4-ethoxycarbonylphenyl)-bis-N,N-phenyl benzidine，聚(9,9-二辛基芴-共-双-N，N-(4-乙氧基羰基苯基)-双-N，N-苯基联苯胺))是一种聚芴类共聚物，具有空穴传输特性，可作为空穴传输材料。PFO-co-NEPBN:F4-TCNQ是PFO-co-NEPBN的P掺杂组合物，F4-TCNQ(2,3,5,6-Tetrafluoro-7,7,8,8-tetracyanoquinodimethane，2,3,5,6-四氟-7,7,8,8-四氰基醌二甲烷)是一种小分子P型掺杂剂，可进行P掺杂。
本发明通过设计双层空穴注入结构，可以防止阳极ITO直接与酸性PEDOT：PSS接触而被腐蚀。同时，本发明还可以调控阳极空穴注入浓度，既可以提高器件的稳定性和寿命，又可以解决器件在高电流下效率滚降较快的问题。
根据本发明的另一个方面，还提供了一种用于制作量子点电致发光器件的方法，该方法具体包括图3所示的几个步骤。
首先，在步骤S210中，在基底上形成阳极。具体的，在基底20上形成阳极21，如ITO阳极。
接着，在步骤S220中，在阳极上形成中性第一空穴注入层27。对形成阳极21后的基板进行清洗和表面处理后，采用溶液沉积法形成中性第一空穴注入层27。具体的，采用旋涂及热处理，形成厚度为20nm的第一空穴注入层27。第一空穴注入层27为有机材料溶于有机溶剂中，并呈中性特征，用于平坦化ITO阳极表面的同时提高阳极空穴注入特性。
用于制作第一空穴注入层的材料包括PTPDES、PTPDES:TPBAH、PFO-co-NEPBN或PFO-co-NEPBN:F4-TCNQ中的任一种。并且，以上四种材料 均可以通过常规实验手段获得。
接着，在步骤230中，在第一空穴注入层27上形成第二空穴注入层22。采用溶液沉积法形成第二空穴注入层22。该第二空穴注入层22为酸性空穴注入层，制作第二空穴注入层22采用的材料包括PEDOT：PSS。
接着，在步骤S240中，在第二空穴注入层22上形成空穴传输层23。采用溶液沉积法形成空穴传输层23。具体的，采用旋涂及热处理，形成厚度为30nm的空穴传输层24。
接着，在步骤S250中，在空穴传输层23上形成量子点发光层24。采用溶液沉积法形成量子点发光层24。具体的，采用旋涂及热处理，形成厚度为20nm的量子点发光层24。
接着，在步骤S260中，在量子点发光层24上形成电子传输层25。采用溶液沉积法形成电子传输层25。具体的，采用旋涂及热处理，形成厚度为30nm的电子传输层25。
最后，在步骤S270中，在电子传输层25上形成阴极26。具体的，采用真空蒸镀方法形成100nm的AL阴极。在形成阴极26后，即可以对该量子点电致发光器件进行封装。
当然，本发明也可以采用溶液沉积法之外的其他方法形成各层，本发明不限于此。
在本发明的一个实施例中，在第一空穴注入层27上形成第二空穴注入层22之前，还进一步包括对第一空穴注入层27的表面进行亲水处理。具体的，可以采用O2Plasma(氧等离子)进行亲水处理。由于第二空穴注入层22采用PEDOT：PSS水溶性时，很难在第一空穴注入层27上直接成膜。通过对第一空穴注入层27进行亲水处理可以提高第一空穴注入层27的表面亲水性，减小接触角，以便PEDOT：PSS在第一空穴注入层27上均匀成膜。
虽然本发明所公开的实施方式如上，但所述的内容只是为了便于理解本发明而采用的实施方式，并非用以限定本发明。任何本发明所属技术领域内的技术人员，在不脱离本发明所公开的精神和范围的前提下，可以在实施的形式上及细节上作任何的修改与变化，但本发明的专利保护范围，仍须以所附的权利要求书所界定的范围为准。

Claims (11)

  1. 一种量子点电致发光器件，包括：
    阳极，设置于基底上；
    第一空穴注入层，为中性空穴注入层，设置于所述阳极上；
    第二空穴注入层，设置于所述第一空穴注入层上；
    量子点发光层，设置于所述第二空穴注入层上；
    阴极，设置于所述量子点发光层上。
  2. 根据权利要求1所述的器件，其中，所述第二空穴注入层为酸性空穴注入层。
  3. 根据权利要求1所述的器件，其中，所述第一空穴注入层的材料HOMO能级介于所述阳极的材料HOMO能级与所述量子点发光层的材料HOMO能级之间。
  4. 根据权利要求2所述的器件，其中，所述第一空穴注入层的材料HOMO能级介于所述阳极的材料HOMO能级与所述量子点发光层的材料HOMO能级之间。
  5. 根据权利要求1所述的器件，其中，所述第一空穴注入层的材料包括PTPDES、PTPDES:TPBAH、PFO-co-NEPBN或PFO-co-NEPBN:F4-TCNQ。
  6. 根据权利要求2所述的器件，其中，所述第二空穴注入层的材料包括PEDOT：PSS。
  7. 根据权利要求1所述的器件，其中，在所述第二空穴注入层和所述量子点发光层之间还设置有空穴传输层。
  8. 根据权利要求1所述的器件，其中，在所述量子点发光层和所述阴极之间还设置有电子传输层。
  9. 一种用于制作量子点电致发光器件的方法，包括：
    在基底上形成阳极；
    在所述阳极上形成中性第一空穴注入层；
    在所述第一空穴注入层上形成第二空穴注入层；
    在所述第二空穴注入层上形成量子点发光层；
    在所述量子点发光层上形成阴极。
  10. 根据权利要求9所述的方法，其中，还包括在形成所述量子点发光层之前，在所述第二空穴注入层上形成空穴传输层。
  11. 根据权利要求9所述的方法，其中，还包括在形成所述阴极之前，在所述量子点发光层上形成电子传输层。
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