WO2017128551A1 - 量子点发光器件及其制备方法及液晶显示装置 - Google Patents

量子点发光器件及其制备方法及液晶显示装置 Download PDF

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WO2017128551A1
WO2017128551A1 PCT/CN2016/081679 CN2016081679W WO2017128551A1 WO 2017128551 A1 WO2017128551 A1 WO 2017128551A1 CN 2016081679 W CN2016081679 W CN 2016081679W WO 2017128551 A1 WO2017128551 A1 WO 2017128551A1
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layer
quantum dot
electron
hole
dot light
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PCT/CN2016/081679
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French (fr)
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徐超
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深圳市华星光电技术有限公司
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Priority to US15/039,427 priority Critical patent/US9960378B2/en
Publication of WO2017128551A1 publication Critical patent/WO2017128551A1/zh

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    • H10K50/115—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising active inorganic nanostructures, e.g. luminescent quantum dots
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    • H10K50/125—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light
    • H10K50/13—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light comprising stacked EL layers within one EL unit
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    • H10K50/13—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light comprising stacked EL layers within one EL unit
    • H10K50/131—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light comprising stacked EL layers within one EL unit with spacer layers between the electroluminescent layers
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    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/1336—Illuminating devices
    • G02F1/133602—Direct backlight
    • G02F1/133603—Direct backlight with LEDs
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
    • G02F2201/44—Arrangements combining different electro-active layers, e.g. electrochromic, liquid crystal or electroluminescent layers
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Definitions

  • the present invention relates to the field of display, and in particular to a quantum dot light emitting device, a method for fabricating the same, and a liquid crystal display device.
  • Quantum dot light-emitting devices such as Quantum dot light emitting diodes (QLEDs) are known as organic light-emitting devices because of their wide color gamut, high color purity, good stability, low power consumption, and low cost. A new generation of lighting devices.
  • the quantum dot light-emitting device includes a quantum dot light-emitting layer, which is generally formed by dissolving a quantum dot light-emitting material in an oily organic solvent and forming a quantum dot light-emitting layer by spin coating.
  • the present invention provides a quantum dot light emitting device comprising an anode, a hole injection layer, a first hole transport layer, a first quantum dot light emitting layer, a charge generating layer, a second quantum dot light emitting layer, An electron transport layer, an electron injection layer, and a cathode, wherein the anode and the cathode are opposite and spaced apart, the hole injection layer, the first hole transport layer, the first quantum dot light emitting layer, and the a charge generation layer, the second quantum dot light-emitting layer, the first electron transport layer, and the electron injection layer are sequentially stacked between the anode and the cathode, and the hole injection layer and the An anode contact, the electron injection layer is in contact with the cathode, the charge generation layer includes a second electron transport layer, a carrier generation layer, and a second hole transport layer, the second electron transport layer, the load The flow generating layer and the second hole transporting layer are sequentially stacked, and the second electron transporting layer
  • the water alcohol soluble polymer comprises any one or more of PFN, PFNBr, and PFNSO.
  • the carrier generating layer is a metal layer.
  • the second hole transport layer includes a P-type metal oxide, wherein the P-type metal oxide includes any one or more of MoO3, NiO, V2O5, and WoO3.
  • the color of the first light is the same as the color of the second light; or the color of the first light is different from the color of the second light.
  • the anode comprises indium tin oxide and the cathode comprises aluminum.
  • the first quantum dot light emitting layer comprises a single layer or a plurality of quantum dots; or/and the second quantum dot light emitting layer comprises a single layer or a plurality of quantum dots.
  • the second electron transport layer has a thickness of 10 to 20 nm, the carrier generation layer is 5 nm, and the second hole transport layer has a thickness of 10 nm.
  • the invention also provides a method for preparing a quantum dot light emitting device, and the method for preparing the quantum dot light emitting device comprises:
  • the charge generation layer includes a second electron transport layer, a carrier generation layer, and a second hole transport a layer, the second electron transport layer, the carrier generation layer, and the second hole transport layer are sequentially stacked, and the second electron transport layer is disposed at the first quantum dot light emitting layer away from the The surface of the first hole transport layer;
  • a cathode is formed on a surface of the electron injection layer away from the first electron transport layer.
  • the present invention also provides a liquid crystal display device comprising the quantum dot light-emitting device according to any of the above embodiments.
  • the quantum dot light emitting device of the present invention includes a charge generating layer that connects the first quantum dot light emitting layer and the second quantum dot light emitting layer in series, the charge generating layer
  • the second electron transport layer, the carrier generation layer, and the second hole transport layer are included, and the second electron transport layer includes a water alcohol soluble polymer.
  • the hydroalcoholic polymer can be dissolved in a solvent having a relatively high polarity, such as water, formaldehyde, or the like. It is possible to prevent damage to the first quantum dot light-emitting layer when the second electron transport layer is formed into a film, and therefore, the performance of the quantum dot light-emitting device can be improved.
  • the water-soluble polymer is non-toxic, has no pollution to the environment during the production process, and is environmentally friendly.
  • FIG. 1 is a schematic structural view of a quantum dot light emitting device according to a preferred embodiment of the present invention.
  • FIG. 2 is a schematic flow chart of a method for fabricating a quantum dot light emitting device according to a preferred embodiment of the present invention.
  • FIG. 3 is a schematic structural view of a liquid crystal display device according to a preferred embodiment of the present invention.
  • FIG. 1 is a schematic structural diagram of a quantum dot light emitting device according to a preferred embodiment of the present invention.
  • the quantum dot light emitting device 100 includes an anode 110, a hole injection layer 120, a first hole transport layer 130, a first quantum dot light emitting layer 140, a charge generating layer 150, a second quantum dot light emitting layer 160, and a first electron transport Layer 170, electron injection layer 180, and cathode 190.
  • the anode 110 is opposite to and spaced apart from the cathode 190, and the hole injection layer 120, the first hole transport layer 130, the first quantum dot light-emitting layer 140, the charge generation layer 150, and the The second quantum dot light-emitting layer 160, the first electron transport layer 170, and the electron injection layer 180 are sequentially disposed between the anode 110 and the cathode 190, and the hole injection layer 120 is The anode 110 is in contact with the electron injection layer 180 in contact with the cathode 190.
  • the charge generation layer 150 includes a second electron transport layer 151, a carrier generation layer 152, and a second hole transport layer 153.
  • the second resistance transmission layer 151, the carrier generation layer 152, and the second hole transport layer 153 are sequentially stacked, and the second electron transport layer 151 is disposed on the first quantum dot light emitting layer.
  • the second hole transport layer 153 is disposed away from the surface of the first hole transport layer 130, and the second hole transport layer 153 is disposed away from the surface of the first electron transport layer 170.
  • the anode 110 is for providing a first hole
  • the cathode 190 is for providing a first electron
  • the hole injection layer 120 is for injecting the first hole into the first hole transport layer 130
  • the first hole transport layer 130 is configured to transport the first hole to the first quantum dot light emitting layer 140
  • the electron injection layer 180 is configured to inject the first electron into the first electron Pass a transport layer 170
  • the first electron transport layer 170 is configured to transmit the first electrons to a second quantum dot light emitting layer 160
  • the carrier generation layer 152 is configured to generate second electrons and second holes.
  • the second electron transport layer 151 is configured to transmit the second electron to the first quantum dot light emitting layer 140
  • the second hole transport layer 153 is configured to transmit the second hole to the a second quantum dot light emitting layer 160, the second electron and the first hole being combined in the first quantum dot light emitting layer 140 to emit a first light, the second hole and the first electron And compositing in the second quantum dot light-emitting layer 160 to emit a second light
  • the second electron transport layer 151 comprises a water-soluble polymer.
  • the color of the first light is the same as the color of the second light; in another embodiment, the color of the first light is different from the color of the second light.
  • the water alcohol soluble polymer includes any one or more of PFN, PFNBr, and PFNSO.
  • the quantum dot light emitting device 100 further includes a substrate 20, which may be a transparent glass substrate or a plastic substrate.
  • the first electron transport layer 170, the electron injection layer 180, and the cathode 190 are disposed on the same side of the substrate 20, and the anode 110 and the surface of the substrate 20.
  • the hole injection layer 120 may be poly(3,4-ethylenedioxythiophene: poly styrenesulfonate, PEDOT:PSS).
  • the hole injection layer 120 may have a thickness of 40 nm.
  • the first hole transport layer 130 includes an organic hole transport material, which is a P-type organic material, and the P-type organic material may be PVK, TFB, Poly-TPD, or the like.
  • the first hole transport layer 130 may have a thickness of 30 to 40 nm.
  • the first quantum dot light-emitting layer 140 has a thickness of 30 to 40 nm.
  • the first quantum dot light emitting layer 140 includes a single layer or a plurality of quantum dots.
  • the charge generation layer 150 is used to connect the first quantum dot light emitting layer 140 and the second quantum dot light emitting layer 160 in series.
  • the material of the second electron transport layer 151 may be a PFN layer, and the second electron transport layer 151 has a thickness of 10 to 20 nm.
  • the carrier generation layer 152 may be a metal layer such as aluminum, and preferably, the carrier generates 152 having a thickness of 5 nm.
  • the second hole transport layer 153 includes a P-type metal oxide, wherein the P-type metal is oxidized
  • the material includes any one or more of MoO3, NiO, V2O5, and WoO3.
  • the second hole transport layer 153 has a thickness of 10 nm.
  • the second quantum dot light-emitting layer 160 has a thickness of 30 to 40 nm.
  • the second quantum dot light emitting layer 160 includes a single layer or a plurality of quantum dots.
  • the cathode 190 can be a metal including aluminum.
  • the quantum dot light emitting device 100 of the present invention includes a charge generating layer 150 that connects the first quantum dot light emitting layer 140 and the second quantum dot light emitting layer 160 in series,
  • the charge generation layer 150 includes a second electron transport layer 151, a carrier generation layer 152, and a second hole transport layer 153, and the second electron transport layer 151 includes a water alcohol soluble polymer.
  • the hydroalcoholic polymer can be dissolved in a solvent having a relatively high polarity, such as water, formaldehyde, or the like.
  • the destruction of the first quantum dot light-emitting layer 140 when the second electron transport layer 151 is formed into a film can be prevented, and therefore, the performance of the quantum dot light-emitting device can be improved.
  • the water-soluble polymer is non-toxic, has no pollution to the environment during the production process, and is environmentally friendly.
  • FIG. 2 is a schematic flow chart of a method for fabricating a quantum dot light emitting device according to a preferred embodiment of the present invention.
  • the method of preparing the quantum dot light-emitting device includes, but is not limited to, the following steps.
  • step S111 the substrate 20 is provided.
  • step S112 an anode 110 is formed on the surface of the substrate 20.
  • step S113 a hole injecting material is coated on the surface of the anode 110 away from the substrate 20 to form a hole injecting layer 120.
  • step S114 coating a first hole transporting material on the surface of the hole injection layer 120 away from the anode 110 to form a first hole transporting layer 130.
  • Step S115 coating a first quantum dot luminescent material on the surface of the first hole transport layer 130 away from the hole injection layer 120 to form a first quantum dot luminescent layer 140.
  • Step S116 forming a charge generation layer 150 on a surface of the first quantum dot light-emitting layer 140 away from the first hole transport layer 130, wherein the charge generation layer 150 includes a second electron transport layer 151, a carrier a layer 152 and a second hole transport layer 153, the second electron transport layer 151, the carrier generation layer 152 and the second hole transport layer 153 are sequentially stacked, and the second electron transport The layer 151 is disposed on the first quantum dot light emitting layer 140 away from the first hole transport layer 153 s surface.
  • Step S117 coating the second quantum dot luminescent material away from the first quantum dot luminescent layer 140 at the charge generating layer 150 to form a second quantum dot luminescent layer 160.
  • Step S118 coating a first electron transporting material on the surface of the second quantum dot light emitting layer 160 away from the charge generating layer 150 to form a first electron transporting layer 170.
  • Step S119 coating an electron injecting material on the surface of the first electron transporting layer 170 away from the second quantum dot emitting layer 160 to form an electron injecting layer 180.
  • a cathode 190 is formed on a surface of the electron injection layer 180 away from the first electron transport layer 170.
  • the hole injection layer 120, the first hole transport layer 130, the first quantum dot light emitting layer 140, the second electron transport layer 151, the second hole transport layer 153, One or more of the second quantum dot light-emitting layer 160, the first electron transport layer 170, and the electron injection layer 180 may be formed by spin coating or spray coating.
  • the hole injection layer 120 may be formed by spin coating or spray coating, specifically, spin coating or spraying the hole injection material on the surface of the anode 110 away from the substrate 20 to form the The hole injection layer 120.
  • the formation manner of the hole injection layer 120 can be referred to, and details are not described herein again.
  • the carrier generation layer 152 and the cathode 190 may be formed by evaporation. Specifically, when the carrier generation layer 150 is formed by evaporation, the technical material is evaporated on the surface of the second electron transport layer 151 away from the first quantum dot light-emitting layer 140 to form the The carrier generation layer 152. When the cathode 190 is formed by evaporation, a metal material is vapor-deposited on a surface of the electron injection layer 180 away from the first electron transport layer 170 to form the cathode 190.
  • the present invention also provides a liquid crystal display device 10.
  • the liquid crystal display device 10 includes the quantum dot light emitting device 100 described above, and details are not described herein again.
  • the liquid crystal display device 10 may include, but is not limited to, a smart phone, a mobile device (MID), an e-book, a Play Station Portable (PSP), or a personal digital assistant (PDA).
  • the portable electronic device can also be a liquid crystal display or the like.

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Abstract

一种量子点发光器件(100)及其制备方法及液晶显示装置(10)。量子点发光器件(100)包括相对且间隔设置的阳极(110)和阴极(190)以及依次层叠设置在阳极(110)和阴极(190)之间的空穴注入层(120)、第一空穴传输层(130)、第一量子点发光层(140)、电荷产生层(150)、第二量子点发光层(160)、第一电子传输层(170)及电子注入层(180)，且空穴注入层(120)与阳极(110)接触，电子注入层(180)与阴极(190)接触，电荷产生层(150)包括依次层叠设置的第二电子传输层(151)、载流子产生层(152)及第二空穴传输层(153)，且第二电子传输层(151)设置在第一量子点发光层(140)远离第一空穴传输层(130)的表面，第二空穴传输层(153)设置在第二量子点发光层(160)远离第一电子传输层(170)的表面，第一量子点发光层(140)发出第一光线，第二量子点发光层(160)发出第二光线，其中，第二电子传输层(151)包括水醇溶性聚合物。

Description

量子点发光器件及其制备方法及液晶显示装置
本发明要求2016年1月25日递交的发明名称为“量子点发光器件及其制备方法及液晶显示装置”的申请号201610050077.9的在先申请优先权，上述在先申请的内容以引入的方式并入本文本中。
技术领域
本发明涉及显示领域，尤其涉及一种量子点发光器件及其制备方法及液晶显示装置。
背景技术
量子点发光器件，比如，量子点发光二极管(Quantum dot Light Emitting Diode，QLED)因具有色域广、色纯度高、稳定性好、低功耗、低成本等优点被誉为继有机发光器件之后的新一代照明器件。所述量子点发光器件包括量子点发光层，所述量子点发光层通常通过如下方式形成：将量子点发光材料溶于油性的有机溶剂中，通过旋涂成膜以形成量子点发光层。由于量子点发光层上覆盖的其他膜层在制作时容易对已经成膜的量子点发光层造成破坏，因此，同时制备出包括多个量子点发光层的量子点发光器件较为困难。
发明内容
本发明提供一种量子点发光器件，所述量子点发光器件包括阳极、空穴注入层、第一空穴传输层、第一量子点发光层、电荷产生层、第二量子点发光层、第一电子传输层、电子注入层及阴极，所述阳极和所述阴极相对且间隔设置，所述空穴注入层、所述第一空穴传输层、所述第一量子点发光层、所述电荷产生层、所述第二量子点发光层、所述第一电子传输层及所述电子注入层依次层叠设置在所述阳极和所述阴极之间，且所述空穴注入层与所述阳极接触，所述电子注入层与所述阴极接触，所述电荷产生层包括第二电子传输层、载流子产生层及第二空穴传输层，所述第二电子传输层、所述载流子产生层及所述第二空穴传输层依次层叠设置，且所述第二电子传输层设置在所述第一量子点发光 层远离所述第一空穴传输层的表面，所述第二空穴传输层设置在所述第二量子点发光层远离所述电子传输层的表面，所述阳极用于提供第一空穴，所述阴极用于提供第一电子，所述空穴注入层用于将所述第一空穴注入所述第一空穴传输层，所述第一空穴传输层用于将所述第一空穴传输至所述第一量子点发光层，所述电子注入层用于将所述第一电子注入所述第一电子传输层，所述第一电子传输层用于将所述第一电子传输至所述第二量子点发光层，所述载流子产生层用于产生第二电子和第二空穴，所述第二电子传输层用于将所述第二电子传输至所述第一量子点发光层，所述第二空穴传输层用于将所述第二空穴传输至所述第二量子点发光层，所述第二电子及所述第一空穴在所述第一量子点发光层内复合以发出第一光线，所述第二空穴及所述第一电子在所述第二量子点发光层内复合以发出第二光线，其中，所述第二电子传输层包括水醇溶性聚合物。
其中，所述水醇溶性聚合物包括PFN、PFNBr、PFNSO中的任意一种或者多种。
其中，所述载流子产生层为金属层。
其中，所述第二空穴传输层包括P型金属氧化物，其中，所述P型金属氧化物包括MoO3、NiO、V2O5及WoO3的任意一种或者多种。
其中，所述第一光线的颜色与所述第二光线的颜色相同；或者所述第一光线的颜色与所述第二光线的颜色不同。
其中，所述阳极包括氧化铟锡，所述阴极包括铝。
其中，所述第一量子点发光层包括单层或者多层量子点；或者/和所述第二量子点发光层包括单层或者多层量子点。
其中，所述第二电子传输层的厚度为10～20nm，所述载流子产生层为5nm，所述第二空穴传输层的厚度为10nm。
本发明还提供了一种量子点发光器件的制备方法，所述量子点发光器件的制备方法包括：
提供基板；
在所述基板的表面形成阳极；
在所述阳极远离所述基板的表面涂布空穴注入材料以形成空穴注入层；
在所述空穴注入层远离所述阳极的表面涂布第一空穴传输材料以形成第一空穴传输层；
在所述第一空穴传输层远离所述空穴注入层的表面涂布第一量子点发光材料以形成第一量子点发光层；
在所述第一量子点发光层远离所述第一空穴传输层的表面形成电荷产生层，其中，所述电荷产生层包括第二电子传输层、载流子产生层及第二空穴传输层，所述第二电子传输层、所述载流子产生层及所述第二空穴传输层依次层叠设置，且所述第二电子传输层设置在所述第一量子点发光层远离所述第一空穴传输层的表面；
在所述电荷产生层远离所述第一量子点发光层的涂布第二量子点发光材料以形成第二量子点发光层；
在所述第二量子点发光层远离所述电荷产生层的表面涂布第一电子传输材料以形成第一电子传输层；
在所述第一电子传输层远离所述第二量子点发光层的表面涂布电子注入材料以形成电子注入层；
在所述电子注入层远离所述第一电子传输层的表面形成阴极。
本发明还提供了一种液晶显示装置，所述液晶显示装置包括前述任一实施方式所述的量子点发光器件。
相较于现有技术，本发明的量子点发光器件包括电荷产生层，所述电荷产生层将所述第一量子点发光层和所述第二量子点发光层串联起来，所述电荷产生层包括第二电子传输层、载流子产生层及第二空穴传输层，所述第二电子传输层包括水醇溶性聚合物。所述水醇溶性聚合物可以溶解在极性较大的溶剂中，比如，水、甲醛等。可以避免所述第二电子传输层制备成膜时对所述第一量子点发光层产生破坏，因此，可以提高所述量子点发光器件的性能。进一步地，所述水醇溶性聚合物是无毒的，在生产过程中对环境无污染，绿色环保。
附图说明
为了更清楚地说明本发明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单地介绍，显而易见地，下面描述 中的附图仅仅是本发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1为本发明一较佳实施方式的量子点发光器件的结构示意图。
图2为本发明一较佳实施方式的量子点发光器件的制备方法的流程示意图。
图3为本发明一较佳实施方式的液晶显示装置的结构示意图。
具体实施方式
下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。
请参阅图1，图1为本发明一较佳实施方式的量子点发光器件的结构示意图。所述量子点发光器件100包括阳极110、空穴注入层120、第一空穴传输层130、第一量子点发光层140、电荷产生层150、第二量子点发光层160、第一电子传输层170、电子注入层180及阴极190。所述阳极110与所述阴极190相对且间隔设置，所述空穴注入层120、所述第一空穴传输层130、所述第一量子点发光层140、所述电荷产生层150、所述第二量子点发光层160、所述第一电子传输层170及所述电子注入层180依次称帝设置在所述阳极110和所述阴极190之间，且所述空穴注入层120与所述阳极110接触，所述电子注入层180与所述阴极190接触。所述电荷产生层150包括第二电子传输层151、载流子产生层152及第二空穴传输层153。所述第二电阻传输层151、所述载流子产生层152及所述第二空穴传输层153依次层叠设置，且所述第二电子传输层151设置在所述第一量子点发光层140远离所述第一空穴传输层130的表面，所述第二空穴传输层153设置在所述第二量子点发光层160远离所述第一电子传输层170的表面。所述阳极110用于提供第一空穴，所述阴极190用于提供第一电子，所述空穴注入层120用于将所述第一空穴注入所述第一空穴传输层130，所述第一空穴传输层130用于将所述第一空穴传输至所述第一量子点发光层140，所述电子注入层180用于将所述第一电子注入所述第一电子传 输层170，所述第一电子传输层170用于将所述第一电子传输至第二量子点发光层160，所述载流子产生层152用于产生第二电子及第二空穴，所述第二电子传输层151用于将所述第二电子传输至所述第一量子点发光层140，所述第二空穴传输层153用于将所述第二空穴传输至所述第二量子点发光层160，所述第二电子及所述第一空穴在所述第一量子点发光层140内复合以发出第一光线，所述第二空穴及所述第一电子在所述第二量子点发光层160内复合以发出第二光线，其中，所述第二电子传输层151包括水醇溶性聚合物。
在一实施方式中，所述第一光线的颜色与所述第二光线的颜色相同；在另一实施方式中，所述第一光线的颜色与所述第二光线的颜色不同。
所述水醇溶性聚合物包括PFN、PFNBr、PFNSO中的任意一种或者多种。
所述量子点发光器件100还包括基板20，所述基板20可以为透明的玻璃基板或者塑料基板。所述阳极110、所述空穴注入层120、所述第一空穴传输层130、所述第一量子点发光层140、所述电荷产生层150、所述第二量子点发光层160、所述第一电子传输层170、所述电子注入层180及阴极190设置在所述基板20的同侧，且所述阳极110与所述基板20的表面。
所述空穴注入层120可以为聚(3,4-乙烯二氧噻吩)-聚苯乙烯磺酸(Poly(3,4-ethylenedioxythiophene)：poly styrenesulfonate，PEDOT：PSS)。所述空穴注入层120的厚度可以为40nm。
所述第一空穴传输层130包括有机空穴传输材料，所述有机空穴传输材料为P型有机材料，所述P型有机材料可以为PVK、TFB、Poly-TPD等。所述第一空穴传输层130的厚度可以为30～40nm。
所述第一量子点发光层140的厚度为30～40nm。所述第一量子点发光层140包括单层或者多层量子点。
所述电荷产生层150用于将所述第一量子点发光层140及所述第二量子点发光层160串联起来。所述第二电子传输层151的材料可以为PFN层，所述第二电子传输层151的厚度为10～20nm。
所述载流子产生层152可以为金属层，比如，铝，优选地，所述载流子产生的152的厚度为5nm。
所述第二空穴传输层153包括P型金属氧化物，其中，所述P型金属氧化 物包括MoO3、NiO、V2O5及WoO3的任意一种或者多种。优选地，所述第二空穴传输层153的厚度为10nm。
所述第二量子点发光层160的厚度为30～40nm。所述第二量子点发光层160包括单层或者多层量子点。
所述阴极190可以为金属，所述金属包括铝。
相较于现有技术，本发明的量子点发光器件100包括电荷产生层150，所述电荷产生层150将所述第一量子点发光层140和所述第二量子点发光层160串联起来，所述电荷产生层150包括第二电子传输层151、载流子产生层152及第二空穴传输层153，所述第二电子传输层151包括水醇溶性聚合物。所述水醇溶性聚合物可以溶解在极性较大的溶剂中，比如，水、甲醛等。可以避免所述第二电子传输层151制备成膜时对所述第一量子点发光层140产生破坏，因此，可以提高所述量子点发光器件的性能。进一步地，所述水醇溶性聚合物是无毒的，在生产过程中对环境无污染，绿色环保。
下面结合图1及前述对量子点发光器件的描述，下面对本发明的量子点发光器件的制备方法进行介绍。请一并参阅图2，图2为本发明一较佳实施方式的量子点发光器件的制备方法的流程示意图。所述量子点发光器件的制备方法包括但不仅限于如下步骤。
步骤S111，提供基板20。
步骤S112，在所述基板20的表面形成阳极110。
步骤S113，在所述阳极110远离所述基板20的表面涂布空穴注入材料以形成空穴注入层120。步骤S114，在所述空穴注入层120远离所述阳极110的表面涂布第一空穴传输材料以形成第一空穴传输层130。
步骤S115，在所述第一空穴传输层130远离所述空穴注入层120的表面涂布第一量子点发光材料以形成第一量子点发光层140。
步骤S116，在所述第一量子点发光层140远离所述第一空穴传输层130的表面形成电荷产生层150，其中，所述电荷产生层150包括第二电子传输层151、载流子产生层152及第二空穴传输层153，所述第二电子传输层151、所述载流子产生层152及所述第二空穴传输层153依次层叠设置，且所述第二电子传输层151设置在所述第一量子点发光层140远离所述第一空穴传输层153 的表面。
步骤S117，在所述电荷产生层150远离所述第一量子点发光层140的涂布第二量子点发光材料以形成第二量子点发光层160。
步骤S118，在所述第二量子点发光层160远离所述电荷产生层150的表面涂布第一电子传输材料以形成第一电子传输层170。
步骤S119，在所述第一电子传输层170远离所述第二量子点发光层160的表面涂布电子注入材料以形成电子注入层180。
步骤S120，在所述电子注入层180远离所述第一电子传输层170的表面形成阴极190。
具体地，所述空穴注入层120、所述第一空穴传输层130、所述第一量子点发光层140、所述第二电子传输层151、所述第二空穴传输层153、所述第二量子点发光层160、所述第一电子传输层170、所述电子注入层180中的一层或者多个层可以通过旋涂或者喷涂的方式形成。举例而言，所述空穴注入层120可以通过旋涂或者喷涂的方式形成，具体地，在所述阳极110远离所述基板20的表面旋涂或者喷涂所述空穴注入材料以形成所述空穴注入层120。当所述第一空穴传输层130、所述第一量子点发光层140、所述第二电子传输层151、所述第二空穴传输层153、所述第二量子点发光层160、所述第一电子传输层170、所述电子注入层180也通过旋涂或者喷涂的方式形成时，可以参照所述空穴注入层120的形成方式，在此不再赘述。
所述载流子产生层152和所述阴极190可以通过蒸镀的方式形成。具体地，当所述载流子产生层150通过蒸镀的方式形成时，在所述第二电子传输层151远离所述第一量子点发光层140的表面蒸镀技术材料，以形成所述载流子产生层152。当所述阴极190通过蒸镀的方式形成时，在所述电子注入层180远离所述第一电子传输层170的表面蒸镀金属材料，以形成所述阴极190。
本发明还提供了一种液晶显示装置10，请参阅图3，所述液晶显示装置10包括前述介绍的量子点发光器件100，在此不再赘述。所述液晶显示装置10可以包括但不仅限于为智能手机、互联网设备(Mobile Internet Device,MID)，电子书，便携式播放站(Play Station Portable,PSP)或者个人数字助理(Personal Digital Assistant,PDA)等便携式电子设备，也可以为液晶显示器等。
以上所揭露的仅为本发明一种较佳实施例而已，当然不能以此来限定本发明之权利范围，本领域普通技术人员可以理解实现上述实施例的全部或部分流程，并依本发明权利要求所作的等同变化，仍属于发明所涵盖的范围。。

Claims (17)

  1. 一种量子点发光器件，其中，所述量子点发光器件包括阳极、空穴注入层、第一空穴传输层、第一量子点发光层、电荷产生层、第二量子点发光层、第一电子传输层、电子注入层及阴极，所述阳极和所述阴极相对且间隔设置，所述空穴注入层、所述第一空穴传输层、所述第一量子点发光层、所述电荷产生层、所述第二量子点发光层、所述第一电子传输层及所述电子注入层依次层叠设置在所述阳极和所述阴极之间，且所述空穴注入层与所述阳极接触，所述电子注入层与所述阴极接触，所述电荷产生层包括第二电子传输层、载流子产生层及第二空穴传输层，所述第二电子传输层、所述载流子产生层及所述第二空穴传输层依次层叠设置，且所述第二电子传输层设置在所述第一量子点发光层远离所述第一空穴传输层的表面，所述第二空穴传输层设置在所述第二量子点发光层远离所述电子传输层的表面，所述阳极用于提供第一空穴，所述阴极用于提供第一电子，所述空穴注入层用于将所述第一空穴注入所述第一空穴传输层，所述第一空穴传输层用于将所述第一空穴传输至所述第一量子点发光层，所述电子注入层用于将所述第一电子注入所述第一电子传输层，所述第一电子传输层用于将所述第一电子传输至所述第二量子点发光层，所述载流子产生层用于产生第二电子和第二空穴，所述第二电子传输层用于将所述第二电子传输至所述第一量子点发光层，所述第二空穴传输层用于将所述第二空穴传输至所述第二量子点发光层，所述第二电子及所述第一空穴在所述第一量子点发光层内复合以发出第一光线，所述第二空穴及所述第一电子在所述第二量子点发光层内复合以发出第二光线，其中，所述第二电子传输层包括水醇溶性聚合物。
  2. 如权利要求1所述的量子点发光器件，其中，所述水醇溶性聚合物包括PFN、PFNBr、PFNSO中的任意一种或者多种。
  3. 如权利要求1所述的量子点发光器件，其中，所述载流子产生层为金属层。
  4. 如权利要求1所述的量子点发光器件，其中，所述第二空穴传输层包括P型金属氧化物，其中，所述P型金属氧化物包括MoO3、NiO、V2O5及WoO3的任意一种或者多种。
  5. 如权利要求1所述的量子点发光器件，其中，所述第一光线的颜色与所述第二光线的颜色相同；或者所述第一光线的颜色与所述第二光线的颜色不同。
  6. 如权利要求1所述的量子点发光器件，其中，所述阳极包括氧化铟锡，所述阴极包括铝。
  7. 如权利要求1所述的量子点发光器件，其中，所述第一量子点发光层包括单层或者多层量子点；或者/和所述第二量子点发光层包括单层或者多层量子点。
  8. 如权利要求1所述的量子点发光器件，其中，所述第二电子传输层的厚度为10～20nm，所述载流子产生层为5nm，所述第二空穴传输层的厚度为10nm。
  9. 一种量子点发光器件的制备方法，其中，所述量子点发光器件的制备方法包括：
    提供基板；
    在所述基板的表面形成阳极；
    在所述阳极远离所述基板的表面涂布空穴注入材料以形成空穴注入层；
    在所述空穴注入层远离所述阳极的表面涂布第一空穴传输材料以形成第一空穴传输层；
    在所述第一空穴传输层远离所述空穴注入层的表面涂布第一量子点发光材料以形成第一量子点发光层；
    在所述第一量子点发光层远离所述第一空穴传输层的表面形成电荷产生层，其中，所述电荷产生层包括第二电子传输层、载流子产生层及第二空穴传输层，所述第二电子传输层、所述载流子产生层及所述第二空穴传输层依次层叠设置，且所述第二电子传输层设置在所述第一量子点发光层远离所述第一空穴传输层的表面；
    在所述电荷产生层远离所述第一量子点发光层的涂布第二量子点发光材料以形成第二量子点发光层；
    在所述第二量子点发光层远离所述电荷产生层的表面涂布第一电子传输材料以形成第一电子传输层；
    在所述第一电子传输层远离所述第二量子点发光层的表面涂布电子注入材料以形成电子注入层；
    在所述电子注入层远离所述第一电子传输层的表面形成阴极。
  10. 一种液晶显示装置，其中，所述液晶显示装置包括量子点发光器件，所述量子点发光器件包括阳极、空穴注入层、第一空穴传输层、第一量子点发光层、电荷产生层、第二量子点发光层、第一电子传输层、电子注入层及阴极，所述阳极和所述阴极相对且间隔设置，所述空穴注入层、所述第一空穴传输层、所述第一量子点发光层、所述电荷产生层、所述第二量子点发光层、所述第一电子传输层及所述电子注入层依次层叠设置在所述阳极和所述阴极之间，且所述空穴注入层与所述阳极接触，所述电子注入层与所述阴极接触，所述电荷产生层包括第二电子传输层、载流子产生层及第二空穴传输层，所述第二电子传输层、所述载流子产生层及所述第二空穴传输层依次层叠设置，且所述第二电子传输层设置在所述第一量子点发光层远离所述第一空穴传输层的表面，所述第二空穴传输层设置在所述第二量子点发光层远离所述电子传输层的表面，所述阳极用于提供第一空穴，所述阴极用于提供第一电子，所述空穴注入层用于将所述第一空穴注入所述第一空穴传输层，所述第一空穴传输层用于将所述第一空穴传输至所述第一量子点发光层，所述电子注入层用于将所述第一电子注入所述第一电子传输层，所述第一电子传输层用于将所述第一电子传输至所述第二量子点发光层，所述载流子产生层用于产生第二电子和第二空穴，所述第 二电子传输层用于将所述第二电子传输至所述第一量子点发光层，所述第二空穴传输层用于将所述第二空穴传输至所述第二量子点发光层，所述第二电子及所述第一空穴在所述第一量子点发光层内复合以发出第一光线，所述第二空穴及所述第一电子在所述第二量子点发光层内复合以发出第二光线，其中，所述第二电子传输层包括水醇溶性聚合物。
  11. 如权利要求10所述的液晶显示装置，其中，所述水醇溶性聚合物包括PFN、PFNBr、PFNSO中的任意一种或者多种。
  12. 如权利要求10所述的液晶显示装置，其中，所述载流子产生层为金属层。
  13. 如权利要求10所述的液晶显示装置，其中，所述第二空穴传输层包括P型金属氧化物，其中，所述P型金属氧化物包括MoO3、NiO、V2O5及WoO3的任意一种或者多种。
  14. 如权利要求10所述的液晶显示装置，其中，所述第一光线的颜色与所述第二光线的颜色相同；或者所述第一光线的颜色与所述第二光线的颜色不同。
  15. 如权利要求10所述的液晶显示装置，其中，所述阳极包括氧化铟锡，所述阴极包括铝。
  16. 如权利要求10所述的液晶显示装置，其中，所述第一量子点发光层包括单层或者多层量子点；或者/和所述第二量子点发光层包括单层或者多层量子点。
  17. 如权利要求10所述的液晶显示装置，其中，所述第二电子传输层的厚度为10～20nm，所述载流子产生层为5nm，所述第二空穴传输层的厚度为 10nm。
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