WO2018149724A1 - Procédé pour la fabrication d'un dispositif de conversion comprenant un élément de conversion et une couche de matériau de dispersion - Google Patents

Procédé pour la fabrication d'un dispositif de conversion comprenant un élément de conversion et une couche de matériau de dispersion Download PDF

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Publication number
WO2018149724A1
WO2018149724A1 PCT/EP2018/053151 EP2018053151W WO2018149724A1 WO 2018149724 A1 WO2018149724 A1 WO 2018149724A1 EP 2018053151 W EP2018053151 W EP 2018053151W WO 2018149724 A1 WO2018149724 A1 WO 2018149724A1
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WO
WIPO (PCT)
Prior art keywords
conversion
conversion elements
carrier
scattering
litter
Prior art date
Application number
PCT/EP2018/053151
Other languages
German (de)
English (en)
Inventor
Martin Brandl
Original Assignee
Osram Opto Semiconductors Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Osram Opto Semiconductors Gmbh filed Critical Osram Opto Semiconductors Gmbh
Publication of WO2018149724A1 publication Critical patent/WO2018149724A1/fr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/0041—Processes relating to semiconductor body packages relating to wavelength conversion elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0091—Scattering means in or on the semiconductor body or semiconductor body package
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements

Definitions

  • the invention relates to a method for producing a conversion device having a conversion element with a scattering material coating, a conversion device and a device having a surface-emitting light emitting diode chip.
  • the object of the invention is to provide a simplified method for producing a conversion device.
  • the object of the invention is to provide a conversion device that is easy to produce.
  • the object of the invention is to provide an improved device with a surface-emitting LED chip.
  • An advantage of the proposed method is that the conversion element is provided with a scattering material coating in a simple manner both on the top side and on side surfaces. This can save a process step.
  • This is achieved by using a Top side of a carrier a plurality of conversion elements virtualei ⁇ nander be applied with spaces between the conversion elements.
  • the conversion elements are designed to shift an electromagnetic radiation in the wavelength.
  • the conversion elements are covered with a litter ⁇ material, wherein top surfaces of the conversion elements are covered with the litter material and spaces between ⁇ rule the conversion elements are filled with the litter material.
  • the conversion elements are embedded in a litter layer. Then trenches are placed in the litter layer in the region of the spaces spaced from side surfaces of the conversion elements.
  • the trenches range from a top of the litter layer to a top of the vehicle.
  • the trenches surround at least one Kon ⁇ version element with a scattering material coating.
  • the conversion elements are solved with the scattering material ⁇ rialbe Anlagenung as a conversion device from the carrier.
  • the trenches can be introduced, for example by means of a shegeverfah ⁇ rens in the scattering material layer.
  • the carrier used is a thermal release film on which the conversion elements are applied. Subsequently, the scattering material coating on the conversion elements and the Thermorelaesefolie ⁇ introduced . The trenches are then introduced into the scattering material layer and the conversion devices are detached from the thermal release film.
  • the conversion elements are first applied to a temporary carrier. After application of the litter layer and before the trenches are introduced into the litter layer, the litter layer with the conversion elements is detached from the temporary carrier and transferred to a second carrier. Subsequently, the trenches are introduced into the litter layer. Then the conversion elements with the scattering coating are removed from the carrier. solves.
  • a temporary carrier By using a temporary carrier, the individual process steps can be optimized.
  • the temporary carrier may be formed as a film, wherein the film is better suited for applying the conversion elements and the scattering layer than a stable plate-shaped carrier.
  • the temporary film may be formed, for example, as a Teflon film.
  • the second carrier can be asbil ⁇ det, for example, as a sawing foil, which is suitable for the introduction of the trenches in the
  • Litter layer in the form of a sawing process is particularly suitable.
  • the conversion element will be introduced ⁇ using a screen printing method on the support.
  • the screen printing method allows a quick and easy production of the conversion element, especially in a variety of conversion elements.
  • the scattering material is applied in liquid or pasty form.
  • the scattering layer can be easily Herge ⁇ provides.
  • the scattering material is applied by means of a compression molding process. Thereby, the scattering layer can be applied, for example, with a high density of scattering particles ⁇ .
  • the scattering material is applied by means of a transfer molding process. In particular, a film-assisted transfer molding process can be used. Using the transfer molding process can the litter material can be reliably introduced even in small lateral distances between the conversion elements.
  • the scattering material used is silicone with scattering particles.
  • scattering particles of titanium oxide can be used. Using titanium oxide, a white appearance is achieved for the litter layer.
  • the conversion device as described is suitable in particular for mounting on a radiation face of a Leuchtdi ⁇ odenchips.
  • a device having a surface-emitting light-emitting diode chip can be produced in a simple manner.
  • the light-emitting diode chip has a semiconductor layer structure which has an active zone for generating electromagnetic radiation.
  • the semi-conductor layer structure comprises a surface which corresponds Wesentli ⁇ chen the surface of the conversion device.
  • the conversion device is arranged above or on top of the semiconductor layer structure. In this way, a compact device for generating electromagnetic radiation can be provided.
  • the semiconductor layer structure is arranged on a substrate.
  • the substrate has a surface which substantially corresponds to the surface of the conversion device. This also makes it possible to provide a compact device.
  • the LED chip may be formed as a flip chip.
  • Fig. 2 is a schematic plan view of the arrangement of
  • FIG. 3 shows a cross section through the arrangement of Fig. 1, with a litter layer
  • FIG. 4 shows a cross section through the arrangement of FIG. 3 after the introduction of trenches into the scattering layer, FIG.
  • Fig. 5 is a schematic plan view of the arrangement of
  • FIG. 6 shows a schematic cross section through a conversion device
  • Fig. 8 shows a cross section through a device with a
  • FIG. 9 shows a plan view of a lower side of the arrangement of FIG. 8, FIG.
  • Fig. 10 is a plan view of the arrangement of Fig. 8, and Fig. 11 is a schematic cross-section through the arrangement of Fig. 8 with a lens.
  • Fig. 1 shows a schematic cross-sectional representation of a carrier 2, on which a plurality of conversion elements 1 are arranged ⁇ .
  • the conversion elements 1 have a luminescent ⁇ material layer or consist in particular of a luminous ⁇ material layer.
  • the conversion elements 1 are designed to shift a wavelength of electromagnetic radiation.
  • the conversion elements 1 can be prepared for example using a spray coating method, a Siebdruckverfah ⁇ proceedings, a potting or Moldvons.
  • a material is, for example, silicone, which is mixed with phosphor.
  • the conversion elements 1 are laterally spaced from each other.
  • the carrier 2 may be formed from ⁇ in form of a plate of a substrate or in the form of a film.
  • the carrier 2 may be formed in the form of a carrier film.
  • the carrier 2 may
  • Fig. 2 shows a plan view of the arrangement of Fig. 1. It can be seen that the conversion elements 1 spaced from each other since ⁇ Lich.
  • a diffusion material 3 on the support 2 and on the Konversionsele ⁇ instruments.
  • the scattering material 3 covers both upper sides 14 of the conversion elements 1 and all side surfaces 15, 16 of the conversion elements 1. Since ⁇ the interstices between the conversion elements 1 are filled with litter material 3 to over a plane of the surfaces 14 of the conversion elements 1.
  • the litter material 3 is designed to scatter electromagnetic radiation. Examples game example, the scattering material 3 to a matrix material such as silicone and scattering particles for example of Ti ⁇ tanoxid.
  • the litter material 3 can be applied, for example, by means of a molding process.
  • the conversion Elements 1 are thus embedded in a litter layer 12 of litter material 3, wherein not only the side surfaces 15, 16 of the conversion elements 1, but also the tops 14 of the conversion elements 1 are covered with the litter layer. Only undersides of the conversion elements 1, which rest on the carrier 2, are not covered with litter material 3.
  • the scattered ⁇ material 3 is applied for example in liquid form or in the form of PAS tuiter to the conversion elements 1 and the carrier. 2
  • the litter material 3 can also be applied to the conversion elements 1 and the carrier 2 by means of a compression molding process.
  • the scattering material 3 can be applied in particular with the aid of a ⁇ film assisted molding process to the conversion elements 1 and the carrier 2 even using a molding method.
  • silicone epoxide can also be used as the matrix material for the scattering material 3.
  • the scattering particles ensure that electromagnetic radiation that enters the
  • the matrix ⁇ material is substantially transparent to electromagnetic ⁇ specific radiation, in particular electromagnetic radiation of a light emitting diode.
  • the scattering particles may be used instead of titanium oxide of Si also ⁇ liziumoxid, zirconium oxide or aluminum oxide formed.
  • the litter material may have a concentration of five percent by weight of the scattering particles.
  • the litter layer 12 with the conversion elements 1 can be detached from the carrier 2 and fastened on a second carrier 5, as shown in FIG. 4.
  • the scattering layer can be attached 12 to the convergence ⁇ sion elements 1 by means of an adhesive on the second Trä ⁇ ger. 5
  • the second carrier 5 may ⁇ example, in the form of a dicing film may be formed.
  • the following process step with the carrier 2 can also be carried out. The following process step is that the trenches 4 and a trench ⁇ structure is introduced with trenches 4 in the scattering layer 12th The trenches 4 are introduced in intermediate areas between two conversion elements 1. Thus, the trenches 4 laterally spaced from the conversion elements 1.
  • each conversion element 1 with litter mate rial ⁇ 3 on all four side surfaces 15, 16 remains covered.
  • the trenches 4 may be introduced, for example, by means of a sawing process.
  • the second carrier 5 is designed as a sawing foil.
  • Fig. 5 shows a schematic plan view of a Sectionaus ⁇ section of Fig. 4. The structure of the trenches 4 can be clearly seen.
  • a conversion element 1 which is illustrated by means of dashed lines, is covered on the upper side and on all four side surfaces with a scattering coating 13 of scattering material 3.
  • the individual conversion elements 1 are removed with the scattering coating 13 of the second carrier 5.
  • FIG. 6 shows a schematic cross section through a conversion element 1 with a scattering coating 13, which has a
  • Conversion device 6 represents. Both the side surfaces and an upper side 14 of the conversion element 1 are covered with a scattering coating 13. Depending on the selected embodiment, the scattering coating 13 on the upper side 14 of the conversion element 1 may be formed thinner than on the side surfaces 15, 16th
  • FIG. 7 shows a schematic plan view of the conversion device 6 from below.
  • the scattering coating 13 is shown transparent.
  • the Konversi ⁇ onsvoriques 6 is suitable, for example, to as to be mounted on a LED chip, which is formed as a surface emission.
  • Fig. 8 shows a corresponding arrangement of a light-emitting diode chip ⁇ 17, on the upper side of the conversion device 6 is arranged.
  • the LED chip 17 has a semi-conductor layered structure 7, which is designed to generate electrostatic ⁇ magnetic radiation.
  • the semiconductor layer structure 7 is arranged on a substrate 18.
  • the substrate 18 may be formed of silicon or germanium, for example.
  • the substrate 18 has contact surfaces 19, 20 on a lower side.
  • the contact surfaces 19, 20 provide electrical connections of the LED chip 17.
  • the contact ⁇ surfaces 19, 20 may be formed in the form of solder pads to be.
  • the light-emitting diode chip 17 has a semiconductor layer structure 7, which essentially has the same area as the conversion device 6.
  • the substrate 18 is also formed with the same area as the semiconductor layer structure 7.
  • the semiconductor layer structure 7 are, for example epitaxially deposited on the substrate and have an active zone for generating electromagnetic radiation.
  • Fig. 9 shows a view from below of the arrangement of Fig. 8.
  • Fig. 10 shows a view of the arrangement of Fig. 8 from above. It can be seen that the conversion device 6 covers the LED chip 17.
  • the LED chip 17 is shown with dashed lines.
  • the LED chip 17 has a surface of similar size to the conversion device 6.
  • FIG. 11 shows a schematic cross-sectional illustration of a further embodiment of an apparatus for generating electromagnetic radiation, which is designed substantially in accordance with FIG. 8.
  • the lens 21 may be formed, for example, in the form of a Fresnel lens.
  • the radiation-emitting device of Figs. 8 to 11 can be, for example, as a flashlight in a mobile device is ⁇ sets.
  • a small device with a light-emitting diode chip for generating electromagnetic radiation can be produced. Since the conversion element is laterally provided with a scattering coating, which represents a white frame, a homo ⁇ genes radiation behavior of the color is achieved over the angle.
  • the method described is technically simple to carry out, since few process steps are required.

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Led Device Packages (AREA)

Abstract

L'invention concerne un procédé pour la fabrication d'un dispositif de conversion (6) comprenant un élément de conversion (1) ayant une couche de matériau de dispersion (13) ; plusieurs éléments de conversion (1) étant disposés côte à côte sur une face supérieure d'un support (2) avec des espaces entre les éléments de conversion (1), les éléments de conversion étant conçus pour décaler la longueur d'onde d'un rayonnement électromagnétique ; les faces supérieures (14) des éléments de conversion (1) et les espaces intermédiaires entre les éléments de conversion (1) étant remplis avec le matériau de dispersion (3), de sorte que les éléments de conversion (1) soient encastrés dans une couche de dispersion (12) ; dans la zone des espaces intermédiaires, des tranchées (4) sont ensuite formées dans la couche de dispersion (12), espacées des faces latérales des éléments de conversion (1), les tranchées (4) étant formées depuis une face supérieure de la couche de dispersion (12) jusqu'à une face supérieure du support (2), et les tranchées (4) entourant au moins un élément de conversion (1) avec une couche de matériau de dispersion (13) ; et les éléments de conversion (1) avec la couche de matériau de dispersion (13) étant ensuite, en tant que dispositif de conversion (6), détachés du support (2).
PCT/EP2018/053151 2017-02-17 2018-02-08 Procédé pour la fabrication d'un dispositif de conversion comprenant un élément de conversion et une couche de matériau de dispersion WO2018149724A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102017103328.9A DE102017103328A1 (de) 2017-02-17 2017-02-17 Verfahren zum Herstellen einer Konversionsvorrichtung mit einem Konversionselement und einer Streumaterialbeschichtung
DE102017103328.9 2017-02-17

Publications (1)

Publication Number Publication Date
WO2018149724A1 true WO2018149724A1 (fr) 2018-08-23

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DE (1) DE102017103328A1 (fr)
WO (1) WO2018149724A1 (fr)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2015036887A1 (fr) * 2013-09-13 2015-03-19 Koninklijke Philips N.V. Boîtier à grille de connexions pour del à puce retournée
DE102014102828A1 (de) * 2014-03-04 2015-09-10 Osram Opto Semiconductors Gmbh Anordnung mit einer lichtemittierenden Diode
DE102014106074A1 (de) * 2014-04-30 2015-11-19 Osram Opto Semiconductors Gmbh Leuchtvorrichtung und Verfahren zum Herstellen einer Leuchtvorrichtung
DE102014114372A1 (de) * 2014-10-02 2016-04-07 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung von optoelektronischen Halbleiterbauelementen und optoelektronisches Halbleiterbauelement
DE102015106865A1 (de) * 2015-05-04 2016-11-10 Osram Opto Semiconductors Gmbh Verfahren zum Herstellen eines Konverterbauteils

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102013207226A1 (de) 2013-04-22 2014-10-23 Osram Opto Semiconductors Gmbh Herstellung eines Schichtelements für einen optoelektronischen Halbleiterchip

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2015036887A1 (fr) * 2013-09-13 2015-03-19 Koninklijke Philips N.V. Boîtier à grille de connexions pour del à puce retournée
DE102014102828A1 (de) * 2014-03-04 2015-09-10 Osram Opto Semiconductors Gmbh Anordnung mit einer lichtemittierenden Diode
DE102014106074A1 (de) * 2014-04-30 2015-11-19 Osram Opto Semiconductors Gmbh Leuchtvorrichtung und Verfahren zum Herstellen einer Leuchtvorrichtung
DE102014114372A1 (de) * 2014-10-02 2016-04-07 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung von optoelektronischen Halbleiterbauelementen und optoelektronisches Halbleiterbauelement
DE102015106865A1 (de) * 2015-05-04 2016-11-10 Osram Opto Semiconductors Gmbh Verfahren zum Herstellen eines Konverterbauteils

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