WO2018126507A1 - 光刻胶涂覆方法和装置 - Google Patents

光刻胶涂覆方法和装置 Download PDF

Info

Publication number
WO2018126507A1
WO2018126507A1 PCT/CN2017/073211 CN2017073211W WO2018126507A1 WO 2018126507 A1 WO2018126507 A1 WO 2018126507A1 CN 2017073211 W CN2017073211 W CN 2017073211W WO 2018126507 A1 WO2018126507 A1 WO 2018126507A1
Authority
WO
WIPO (PCT)
Prior art keywords
substrate
photoresist coating
photoresist
supply unit
unit
Prior art date
Application number
PCT/CN2017/073211
Other languages
English (en)
French (fr)
Inventor
罗先刚
王彦钦
赵泽宇
蒲明博
高平
马晓亮
李雄
郭迎辉
Original Assignee
中国科学院光电技术研究所
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 中国科学院光电技术研究所 filed Critical 中国科学院光电技术研究所
Priority to US15/758,209 priority Critical patent/US11061330B2/en
Priority to EP17847704.8A priority patent/EP3567429B1/en
Publication of WO2018126507A1 publication Critical patent/WO2018126507A1/zh

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G03F7/162—Coating on a rotating support, e.g. using a whirler or a spinner
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05C—APPARATUS FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05C11/00—Component parts, details or accessories not specifically provided for in groups B05C1/00 - B05C9/00
    • B05C11/02—Apparatus for spreading or distributing liquids or other fluent materials already applied to a surface ; Controlling means therefor; Control of the thickness of a coating by spreading or distributing liquids or other fluent materials already applied to the coated surface
    • B05C11/08—Spreading liquid or other fluent material by manipulating the work, e.g. tilting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D1/00—Processes for applying liquids or other fluent materials
    • B05D1/002—Processes for applying liquids or other fluent materials the substrate being rotated
    • B05D1/005—Spin coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/6715—Apparatus for applying a liquid, a resin, an ink or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/6719—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the processing chambers, e.g. modular processing chambers

Definitions

  • the present invention relates to the field of photoresist coating technology, and in particular, to a photoresist coating method and apparatus.
  • photoresist coating In the photolithography process, the quality of the photoresist coating directly affects the quality of the lithography.
  • Commonly used photoresist coating methods are: spin coating, spray coating, roll coating, immersion and pulling, and the like.
  • the spin coating method essentially has radial rate non-uniformity.
  • the conventional spin coating uses an ultra-high speed to provide airflow to dry the photoresist, which is low in efficiency and high in equipment requirements.
  • the spray coating method can coat large-area and curved substrates, it is difficult to coat the thickness of the adhesive layer below 5.0 ⁇ m, and the surface of the adhesive layer is poor in surface finish.
  • the roll coating method is generally used for the application of a photosensitive film such as a photographic film which is soft in texture, thin in thickness, and long in length.
  • the immersion pulling method is easy to contaminate a large amount of photoresist solution due to the immersion of the substrate, and the photoresist has a good uniformity in the direction of the parallel liquid surface when the vertical liquid surface is pulled, but in the vertical liquid level. Uniformity in the direction is difficult to maintain, especially for large areas and curved substrates.
  • the technical problem to be solved by the present invention is to realize rapid (lowest coating time of 1 minute) and uniform (uniformity error of not more than ⁇ 5%) adhesive layer coating of large-area planar substrate and axisymmetric aspherical curved substrate.
  • the technical solution of the present invention is to provide a photoresist coating device and a photoresist coating method, which can realize uniform large-area photoresist coating.
  • a photoresist coating apparatus comprising: a gas supply unit (10) for supplying a gas to a photoresist coating unit (20); the photoresist coating unit (20), including: An apparatus cavity (202) surrounded by a side wall, a bottom plate and a cover plate (206), a rotating platform (204) for carrying the substrate (205) and driving the substrate to rotate, conformal to the substrate (205) a flow guiding unit for uniformly blowing a gas supplied from the gas supply unit through the surface of the substrate coated with the photoresist; and an air extraction unit (203) for pumping the device cavity (202).
  • the flow guiding unit comprises: the cover plate (206) located above the substrate (205), and the center of the cover plate coincides with the center of the substrate, and the surface shape and the base of the cover plate The surface shape of the sheet is conformal; a plurality of air inlet holes (207) are located at the center of the cover plate, and are used for inputting gas supplied from the air supply unit into the device cavity (202) through the air inlet holes; a vent hole (209) disposed on a bottom plate of the photoresist coating unit (20), the plurality of vent holes being symmetrically arranged centering on a rotation axis of the rotating platform (4); and wherein the pumping is performed A unit (203) is in communication with the venting port (209) and the device chamber (202) is evacuated through the venting port (209).
  • the air supply unit (10) is an open air supply unit or a ducted air supply unit.
  • the number of pipes is the same as the number of intake holes (207), and the diameter of the nozzle ensures seamless connection with the intake holes (207).
  • the air flow rate of the air supply unit (10) can be adjusted.
  • the gas supplied by the gas supply unit is high clean compressed air or high purity nitrogen.
  • the air flow rate of the air extraction unit (203) is adjustable, and the air suction flow rate of the air extraction unit is not less than the air supply flow rate of the air supply unit (10).
  • the air vents (209) are evenly distributed around the rotating table.
  • the cover plate (206) is carried by a cover table (2081, 2082) disposed on a side wall of the device cavity (202), and the cover table is moved up and down to adjust the cover plate (206) The distance from the substrate (205).
  • the distance between the surface of the substrate and the cover plate is between 5 and 50 mm.
  • a sealing strip is disposed around the cover plate (206) to ensure that the air flow is only fed by the centrally located air inlet opening (207).
  • the geometry of the air inlet hole (207) is circularly symmetrical.
  • the plurality of intake holes (207) are evenly arranged in a circularly symmetric distribution.
  • the rotational speed of the rotating platform (204) is adjustable and the rotational speed is less than 300 rpm.
  • a photoresist coating method which uses the photoresist coating apparatus as described above, the photoresist coating method comprising the steps of: substrate (205) Loading on the rotating platform (204) (S301); coating the photoresist on the substrate (S302); capping the device cavity (202) with a cover (206) having an air inlet (207) (S303)
  • the substrate (205) is rotated by the rotating platform (240) (S304); the gas is evenly blown through the gas supply unit (10), the flow guiding unit (206, 207, 209) and the pumping unit.
  • the substrate surface of the photoresist (S305); after the predetermined glue application period, the rotating platform (204) stops rotating (S306).
  • the photoresist is coated on the substrate at a very low rotational speed of 0-40 rpm.
  • the photoresist is coated on the substrate at a gas flow rate of no more than 20% of the maximum gas flow rate of the gas supply unit.
  • the substrate (205) is rotated by the rotating platform (240) at a low rotational speed of 40-300 rpm (S304).
  • the gas supply unit (10), the flow guiding unit (206, 207, 209) and the suction unit the gas supply unit
  • the air flow rate of (10) is not less than 80% of the maximum air flow of the air supply system.
  • FIG. 1 is a schematic structural view of a photoresist coating apparatus for coating a planar substrate according to an embodiment of the present invention
  • FIG. 2 is a schematic structural view of a photoresist coating apparatus for coating a symmetric curved substrate according to an embodiment of the present invention
  • FIG. 3 shows a flow chart of a photoresist coating method in accordance with an embodiment of the present invention.
  • the photoresist coating apparatus includes: a gas supply unit (10) for supplying a gas to a photoresist coating unit (20); the photoresist coating unit (20),
  • the utility model comprises: a device cavity (202) enclosed by a side wall, a bottom plate and a cover plate (206), and a rotating platform (204) for carrying the substrate (205) and driving the substrate to rotate, which is shared with the substrate (205) a flow guiding unit for uniformly blowing a gas supplied from the gas supply unit through the surface of the substrate coated with the photoresist; and an air extraction unit (203) for pumping the device cavity (202).
  • the flow guiding unit includes: the cover plate (206) located above the substrate (205), and the center of the cover plate coincides with the center of the substrate, and the surface shape of the cover plate and the substrate The surface shape is conformal; a plurality of air inlet holes (207) are located at the center of the cover plate, and are used for inputting gas supplied from the air supply unit into the device cavity (202) through the air inlet holes; Stomata (209), set in On the bottom plate of the photoresist coating unit (20), the plurality of suction holes are symmetrically arranged centering on a rotation axis of the rotating platform (4); and wherein the pumping unit (203) and the pumping unit The vents (209) are in communication and the device chamber (202) is evacuated through the vents (209).
  • the air supply unit is an open air supply system 1.
  • a cover with a circular air inlet in the center.
  • the bottom of the device is provided with a plurality of air venting holes 209 arranged symmetrically about the axis of rotation of the rotating platform.
  • FIG. 2 is a schematic view showing the structure of a photoresist coating apparatus for coating a symmetric curved substrate according to an embodiment of the present invention.
  • an axisymmetric curved surface substrate 205 is placed on the rotating platform 204.
  • the upper surface of the substrate is an axisymmetric curved cover plate 206 conforming to the surface shape of the substrate, and the lower surface of the cover plate is conformed to the upper surface of the substrate.
  • the center of the cover plate is provided with eight circular air inlet holes 13 which are symmetrically distributed, each of which has an aperture of 30 mm.
  • the bottom of the device is provided with a plurality of air suction holes 209 which are arranged symmetrically about the rotation axis of the rotating platform. .
  • the air supply unit (10) is an open air supply unit or a duct type air supply unit.
  • the air supply unit is a ducted air supply unit
  • the number of pipes is the same as the number of intake holes (207), and the diameter of the nozzle ensures seamless connection with the intake holes (207).
  • the air flow rate of the air supply unit (10) can be adjusted.
  • the gas supplied by the gas supply unit is high clean compressed air or high purity nitrogen.
  • the air flow rate of the air extraction unit (203) is adjustable, and the air suction flow rate of the air extraction unit is not less than the air supply flow rate of the air supply unit (10).
  • the air vents (209) are evenly distributed around the rotating table.
  • the cover plate (206) is carried by a cover table (2081, 2082) disposed on a side wall of the device cavity (202), and the cover table is moved up and down to adjust the cover plate (206) The distance from the substrate (205).
  • the distance between the surface of the substrate and the cover is between 5 and 50 mm.
  • a sealing strip is disposed around the cover plate (206) to ensure that the air flow is only fed by the centrally located air inlet opening (207).
  • the geometry of the air inlet hole (207) is circularly symmetrical.
  • the plurality of intake holes (207) are evenly arranged in a circularly symmetric distribution.
  • the rotational speed of the rotating platform (204) is adjustable and the rotational speed is less than 300 rpm.
  • the photoresist coating method includes the following steps: (205) loaded on the rotating platform (204) (S301); coating the photoresist on the substrate (S302); capping the device cavity (202) with a cover (206) having an air inlet (207) (S303); driving the substrate (205) to rotate by the rotating platform (240) (S304); uniformly blowing the gas through the gas supply unit (10), the flow guiding unit (206, 207, 209) and the pumping unit The surface of the substrate covered with the photoresist (S305); after a predetermined period of application, the rotating platform (204) stops rotating (S306).
  • the photoresist may be coated on the substrate at a very low rotational speed of 0-40 rpm.
  • the photoresist may be coated on the substrate at a gas flow rate not greater than 20% of the maximum gas flow rate of the gas supply unit.
  • the substrate (205) can be rotated by the rotating platform (240) at a low rotational speed of 40-300 rpm.
  • the supply The gas flow rate of the gas unit (10) is not less than 80% of the maximum gas flow rate of the gas supply system.
  • the specific flow of the photoresist coating method according to an example of the present invention will be described in detail below with Z1500 photoresist solution particles.
  • the photoresist coating method comprises the steps of: coating the AZ1500 photoresist solution at a rotation speed of 40 rpm and a gas flow rate of 20% of the maximum gas flow rate of the gas supply unit (the gas supply unit frequency is set to 30 Hz). On a flat glass substrate having a diameter of 1.2 m and a thickness of 8 mm.
  • the cover When the surface of the substrate is completely covered with the photoresist solution, the cover is covered, and the circular inlet hole diameter of the cover plate is 120 mm, the cover plate is 30 mm away from the substrate, and the lower surface of the cover plate is parallel to the upper surface of the substrate.
  • the speed is increased to 300 rpm, the air flow rate is increased to 80% of the maximum air flow rate of the air supply unit, and the frequency of the air supply unit is adjusted to 120 Hz.
  • the rotation was stopped and the coating was completed.
  • the film thickness of the photoresist using the roughness meter was 1.8 ⁇ m ⁇ 90 nm, and the uniformity error was ⁇ 5%.
  • the film thickness from the center region to the edge is changed from 0.96 ⁇ m to 1.7 ⁇ m, that is, the film thickness is 1.35 ⁇ 0.35 ⁇ m, uniformity, with the same process parameters as above.
  • the error is: ⁇ 26%
  • the invention can realize the rapid (coating) of a large-diameter ( ⁇ 1 m 2 ) planar substrate and an axisymmetric aspherical curved substrate at a low rotation speed ( ⁇ 300 rpm).
  • the shortest time is 1 minute
  • uniform (uniformity error is not more than ⁇ 5%)
  • the adhesive layer is coated
  • the film thickness is thinner (5.0 ⁇ m or less).
  • the invention has the advantages of simple structure, easy operation, high efficiency and low cost, and most of the harmful gas with the cover plate for volatilizing the photoresist is discharged from the pumping system and neutralized to become harmless substance, which is environmentally friendly.

Abstract

一种光刻胶涂覆装置和光刻胶涂覆方法。光刻胶涂覆装置包括：供气单元(10)，用于向光刻胶涂覆单元(20)供应气体；所述光刻胶涂覆单元(20)，包括：由侧壁、底板和盖板(206)包封的设备腔体(202)，旋转平台(204)，用于承载基片(205)并带动基片旋转，与基片共形的导流单元，用于将供气单元供应的气体均匀地吹过涂覆了光刻胶的基片表面；以及抽气单元(203)，对设备腔体(202)抽气。该方法实现了大面积基片的快速均匀光刻胶涂覆。

Description

光刻胶涂覆方法和装置
本申请要求了2017年1月4日提交的、申请号为201710004036.0、发明名称为“光刻胶涂覆方法和装置”的中国专利申请的优先权，其全部内容通过引用结合在本申请中。
技术领域
本发明涉及光刻胶涂覆技术领域，尤其涉及一种光刻胶涂覆方法和装置。
背景技术
在光刻工艺中，光刻胶涂覆质量的优劣直接影响光刻的质量。常用的光刻胶涂覆方法有：旋涂法、喷涂法、滚涂法、浸入提拉法等。
旋涂法本质上就有径向速率的不均匀性，传统旋涂是利用超高转速提供气流来干燥光刻胶，效率低，对设备要求高。喷涂法虽可涂覆大面积和曲面基片，但难以涂覆5.0μm以下的胶层厚度，此外胶层表面光洁度差。滚涂法通常用于摄影胶片等质地较软、厚度较薄、长度很长的感光胶带的涂胶。浸入提拉法容易因基片的浸入而污染大量的光刻胶溶液，而垂直液面提拉时，光刻胶在平行液面的方向上具有很好的均匀性，但在垂直液面的方向上均匀性难以保持稳定，对于大面积和曲面基片来说，这种情况尤为严重。
因此，以上方法均难以实现大面积平面基片和轴对称非球面曲面基片的快速(最短涂覆时间1分钟)、均匀(均匀性误差不大于±5％)胶层涂覆。
发明内容
本发明要解决的技术问题是：实现大面积平面基片和轴对称非球面曲面基片的快速(最短涂覆时间1分钟)、均匀(均匀性误差不大于±5％)胶层涂覆。
为解决上述技术问题，本发明的技术方案为：提供一种光刻胶涂覆装置和光刻胶涂覆方法，可以实现均匀的大面积光刻胶涂覆。
根据本发明的实施例，提出了一种光刻胶涂覆装置，包括：供气单元(10)，用于向光刻胶涂覆单元(20)供应气体；所述光刻胶涂覆单元(20)，包括： 由侧壁、底板和盖板(206)包封的设备腔体(202)，旋转平台(204)，用于承载基片(205)并带动基片旋转，与基片(205)共形的导流单元，用于将供气单元供应的气体均匀地吹过涂覆了光刻胶的基片表面；以及抽气单元(203)，对所述设备腔体(202)抽气。
可选地，所述导流单元包括：位于基片(205)上方的所述盖板(206)，并且所述盖板的中心与基片的中心重合,所述盖板的表面形状与基片的表面形状共形；多个进气孔(207)，位于所述盖板中心，并且用于将供气单元供应的气体通过所述进气孔输入设备腔体(202)内；多个抽气孔(209)，设置于所述光刻胶涂覆单元(20)的底板上，所述多个抽气孔以旋转平台(4)的转动轴为中心对称排布；以及其中所述抽气单元(203)与所述抽气孔(209)相连通，并且通过所述抽气孔(209)对所述设备腔体(202)抽气。
可选地，所述供气单元(10)是开放式供气单元或管道式供气单元。
可选地，在所述供气单元是管道式供气单元的情况下，管道的数量与进气孔(207)数量一致，管口口径确保与进气孔(207)无缝衔接。
可选地，所述供气单元(10)的气流量大小可调节。
可选地，所述供气单元供应的气体是高洁净压缩空气或高纯氮气。
可选地，所述抽气单元(203)的气流量大小可调节，并且所述抽气单元的抽气流量不小于供气单元(10)的供气流量。
可选地，所述抽气孔(209)均匀分布于旋转台四周。
可选地，所述盖板(206)由设备腔体(202)侧壁上设置的载盖台(2081,2082)承载，并且所述载盖台上下移动以调节所述盖板(206)与基片(205)的间距。
可选地，所述基片的表面与所述盖板之间的间距在5～50mm之间。
可选地，所述盖板(206)周围设置有密封条，以确保气流只由位于中心的进气孔(207)送入。
可选地，所述进气孔(207)的几何形状为圆对称形。
可选地，如果设置多个进气孔(207)，则所述多个进气孔(207)按照圆对称分布均匀排列。
可选地，所述旋转平台(204)的转速可调，并且所述转速小于300rpm。
根据本发明实施例的另一个方面，提出了一种光刻胶涂覆方法，使用如上所述的光刻胶涂覆装置，所述光刻胶涂覆方法包括以下步骤：将基片(205)装载在旋转平台(204)上(S301)；将光刻胶涂覆在基片上(S302)；用具有进气孔(207)的盖板(206)封盖设备腔体(202)(S303)；通过旋转平台(240)带动基片(205)旋转(S304)；通过供气单元(10)、导流单元(206、207、209)和抽气单元使气体均匀地吹过涂覆了光刻胶的基片表面(S305)；在预定的涂胶时间段之后，所述旋转平台(204)停止旋转(S306)。
可选地，在0-40rpm的极低转速下将光刻胶涂覆在基片上。
可选地，在不大于供气单元最大气流量的20％的气流量下将光刻胶涂覆在基片上。
可选地，在40-300rpm低转速下，通过旋转平台(240)带动基片(205)旋转(S304)。
可选地，在通过供气单元(10)、导流单元(206、207、209)和抽气单元使气体均匀地吹过涂覆了光刻胶的基片表面时，所述供气单元(10)的气流量不小于供气系统最大气流量的80％。
与现有技术相比的有益效果：(1)本发明在低转速(≤300rpm)下即可实现超大口径(≥1m2)的平面基片和轴对称非球面曲面基片的快速(涂覆最短时间1分钟)、均匀(均匀性误差不大于±5％)胶层涂覆，而且膜层厚度更薄(5.0μm以下)。(2)本发明结构简单，易于操作，效率高，成本低，有盖板使光刻胶挥发的大部分有害气体由抽气系统排出后经中和变为无害物质利于环保。
附图说明
图1示出了根据本发明实施例的光刻胶涂覆装置的结构示意图，用于涂覆平面基片；
图2示出了根据本发明实施例的光刻胶涂覆装置的结构示意图，用于涂覆对称曲面基片；
图3示出了根据本发明实施例的光刻胶涂覆方法的流程图。
附图标记
10 供气单元
202 设备腔体
203 抽气单元
204 旋转平台；
205 平面基片；
206 盖板
207 进气孔
208-1、208-2 载盖台
209 抽气孔
→ 气流
211 轴对称曲面基片；
212 轴对称曲面盖板；
213 进气孔
具体实施方式
现在对本发明的实施例提供详细参考，其范例在附图中说明，图中相同的数字全部代表相同的元件。为解释本发明下述实施例将参考附图被描述。
图1示出了根据本发明实施例的光刻胶涂覆装置的结构示意图，用于涂覆平面基片。如图1所示，所述光刻胶涂覆装置包括：供气单元(10)，用于向光刻胶涂覆单元(20)供应气体；所述光刻胶涂覆单元(20)，包括：由侧壁、底板和盖板(206)包封的设备腔体(202)，旋转平台(204)，用于承载基片(205)并带动基片旋转，与基片(205)共形的导流单元，用于将供气单元供应的气体均匀地吹过涂覆了光刻胶的基片表面；以及抽气单元(203)，对所述设备腔体(202)抽气。
具体地，所述导流单元包括：位于基片(205)上方的所述盖板(206)，并且所述盖板的中心与基片的中心重合,所述盖板的表面形状与基片的表面形状共形；多个进气孔(207)，位于所述盖板中心，并且用于将供气单元供应的气体通过所述进气孔输入设备腔体(202)内；多个抽气孔(209)，设置于 所述光刻胶涂覆单元(20)的底板上，所述多个抽气孔以旋转平台(4)的转动轴为中心对称排布；以及其中所述抽气单元(203)与所述抽气孔(209)相连通，并且通过所述抽气孔(209)对所述设备腔体(202)抽气。
具体地如图1所示，所述供气单元是开放式送气系统1。基片上方为中心带有圆形进气孔的盖板。装置底部设置有多个以旋转平台转轴呈中心对称排布的抽气孔209。
图2示出了根据本发明实施例的光刻胶涂覆装置的结构示意图，用于涂覆对称曲面基片。如图2所示，旋转平台204上放置有轴对称曲面基片205，基片上方为与基片面形一致的轴对称曲面盖板206，盖板下表面与基片上表面共形。盖板的中心设置有8个呈圆对称分布的圆形进气孔13，每个进气孔的孔径为30mm，设备底部有设置有多个以旋转平台转轴呈中心对称排布的抽气孔209。
在如图1和图2所示的光刻胶涂覆装置中，可选地，所述供气单元(10)是开放式供气单元或管道式供气单元。
可选地，在所述供气单元是管道式供气单元的情况下，管道的数量与进气孔(207)数量一致，管口口径确保与进气孔(207)无缝衔接。可选地，所述供气单元(10)的气流量大小可调节。可选地，所述供气单元供应的气体是高洁净压缩空气或高纯氮气。可选地，所述抽气单元(203)的气流量大小可调节，并且所述抽气单元的抽气流量不小于供气单元(10)的供气流量。可选地，所述抽气孔(209)均匀分布于旋转台四周。可选地，所述盖板(206)由设备腔体(202)侧壁上设置的载盖台(2081,2082)承载，并且所述载盖台上下移动以调节所述盖板(206)与基片(205)的间距。可选地，所述基片的表面与所述盖板之间的间距在5-50mm之间。可选地，所述盖板(206)周围设置有密封条，以确保气流只由位于中心的进气孔(207)送入。可选地，所述进气孔(207)的几何形状为圆对称形。可选地，如果设置多个进气孔(207)，则所述多个进气孔(207)按照圆对称分布均匀排列。可选地，所述旋转平台(204)的转速可调，并且所述转速小于300rpm。
图3示出了根据本发明实施例的光刻胶涂覆方法的流程图，使用如上所述的光刻胶涂覆装置。如图3所示，所述光刻胶涂覆方法包括以下步骤：将基片 (205)装载在旋转平台(204)上(S301)；将光刻胶涂覆在基片上(S302)；用具有进气孔(207)的盖板(206)封盖设备腔体(202)(S303)；通过旋转平台(240)带动基片(205)旋转(S304)；通过供气单元(10)、导流单元(206、207、209)和抽气单元使气体均匀地吹过涂覆了光刻胶的基片表面(S305)；在预定的涂胶时间段之后，所述旋转平台(204)停止旋转(S306)。
可选地在步骤S301中，可以在0-40rpm的极低转速下将光刻胶涂覆在基片上。
可选地在步骤S301中，可以在不大于供气单元最大气流量的20％的气流量下将光刻胶涂覆在基片上。
可选地在步骤S304中，可以在40-300rpm低转速下，通过旋转平台(240)带动基片(205)旋转。
可选地在步骤S305中通过供气单元(10)、导流单元(206、207、209)和抽气单元使气体均匀地吹过涂覆了光刻胶的基片表面时，所述供气单元(10)的气流量不小于供气系统最大气流量的80％。
下面以Z1500光刻胶溶液微粒详细地描述根据本发明示例的光刻胶涂覆方法的具体流程。所述光刻胶涂覆方法包括以下步骤：在转速为40rpm，气流量为供气单元最大气流量的20％(供气单元频率设为30HZ)条件下，将AZ1500光刻胶溶液涂布满直径为1.2m、厚度为8mm厚的平面玻璃基片上。待到基片表面完全布满光刻胶溶液时，盖上盖板，盖板中心圆形进气孔直径为120mm，盖板距基片30mm，盖板下表面与基片上表面平行。将转速提升至300rpm，气流量提高至供气单元最大气流量的80％，供气单元频率调至120HZ。经过1分钟之后停止旋转，涂胶完成。使用粗糙度仪光刻胶的膜厚为1.8μm±90nm，均匀性误差为±5％。
作为比较示例，当不加盖板涂胶时，在上述工艺参数相同的情况下，测得从中心区域至边缘膜厚从0.96μm至1.7μm变化，即膜厚为1.35±0.35μm,均匀性误差为：±26％
与现有技术相比的有益效果：(1)本发明在低转速(≤300rpm)下即可实现超大口径(≥1m2)的平面基片和轴对称非球面曲面基片的快速(涂覆最短时间1分钟)、均匀(均匀性误差不大于±5％)胶层涂覆，而且膜层厚度更薄 (5.0μm以下)。(2)本发明结构简单，易于操作，效率高，成本低，有盖板使光刻胶挥发的大部分有害气体由抽气系统排出后经中和变为无害物质利于环保。
尽管已经参考本发明的典型实施例，具体示出和描述了本发明，但本领域普通技术人员应当理解，在不脱离所附权利要求所限定的本发明的精神和范围的情况下，可以对这些实施例进行形式和细节上的多种改变。

Claims (19)

  1. 一种光刻胶涂覆装置，包括：
    供气单元(10)，用于向光刻胶涂覆单元(20)供应气体；
    所述光刻胶涂覆单元(20)，包括：
    由侧壁、底板和盖板(206)包封的设备腔体(202)，
    旋转平台(204)，用于承载基片(205)并带动基片旋转，
    与基片(205)共形的导流单元，用于将供气单元供应的气体均匀地吹过涂覆了光刻胶的基片表面；以及
    抽气单元(203)，对所述设备腔体(202)抽气。
  2. 根据权利要求1所述的光刻胶涂覆装置，其中所述导流单元包括：
    位于基片(205)上方的所述盖板(206)，并且所述盖板的中心与基片的中心重合,所述盖板的表面形状与基片的表面形状共形；
    多个进气孔(207)，位于所述盖板中心，并且用于将供气单元供应的气体通过所述进气孔输入设备腔体(202)内；
    多个抽气孔(209)，设置于所述光刻胶涂覆单元(20)的底板上，所述多个抽气孔以旋转平台(4)的转动轴为中心对称排布；以及
    其中所述抽气单元(203)与所述抽气孔(209)相连通，并且通过所述抽气孔(209)对所述设备腔体(202)抽气。
  3. 根据权利要求1或2所述的光刻胶涂覆装置，其中所述供气单元(10)是开放式供气单元或管道式供气单元。
  4. 根据权利要求3所述的光刻胶涂覆装置，其中在所述供气单元是管道式供气单元的情况下，管道的数量与进气孔(207)数量一致，管口口径确保与进气孔(207)无缝衔接。
  5. 根据权利要求3所述的光刻胶涂覆装置，其中所述供气单元(10)的气流量大小可调节。
  6. 根据权利要求3所述的光刻胶涂覆装置，其中所述供气单元供应的气体是高洁净压缩空气或高纯氮气。
  7. 根据权利要求3所述的光刻胶涂覆装置，其中所述抽气单元(203)的气流量大小可调节，并且所述抽气单元的抽气流量不小于供气单元(10)的供 气流量。
  8. 根据权利要求3所述的光刻胶涂覆装置，其中所述抽气孔(209)均匀分布于旋转台四周。
  9. 根据权利要求3所述的光刻胶涂覆装置，其中所述盖板(206)由设备腔体(202)侧壁上设置的载盖台(2081,2082)承载，并且所述载盖台上下移动以调节所述盖板(206)与基片(205)的间距。
  10. 根据权利要求9所述的光刻胶涂覆装置，其中所述基片的表面与所述盖板之间的间距在5～50mm之间。
  11. 根据权利要求9所述的光刻胶涂覆装置，其中所述盖板(206)周围设置有密封条，以确保气流只由位于中心的进气孔(207)送入。
  12. 根据权利要求3所述的光刻胶涂覆装置，其中所述进气孔(207)的几何形状为圆对称形。
  13. 根据权利要求3所述的光刻胶涂覆装置，其中如果设置多个进气孔(207)，则所述多个进气孔(207)按照圆对称分布均匀排列。
  14. 根据权利要求1所述的光刻胶涂覆装置，其中所述旋转平台(204)的转速可调，并且所述转速小于300rpm。
  15. 一种光刻胶涂覆方法，使用根据权利要求1-14任一项所述的光刻胶涂覆装置，包括以下步骤：
    将基片(205)装载在旋转平台(204)上(S301)；
    将光刻胶涂覆在基片上(S302)；
    用具有进气孔(207)的盖板(206)封盖设备腔体(202)(S303)；
    通过旋转平台(240)带动基片(205)旋转(S304)；
    通过供气单元(10)、导流单元(206、207、209)和抽气单元使气体均匀地吹过涂覆了光刻胶的基片表面(S305)；
    在预定的涂胶时间段之后，所述旋转平台(204)停止旋转(S306)。
  16. 根据权利要求15所述的光刻胶涂覆方法，其中在0-40rpm的极低转速下将光刻胶涂覆在基片上。
  17. 根据权利要求15所述的光刻胶涂覆方法，其中在不大于供气单元最大气流量的20％的气流量下将光刻胶涂覆在基片上。
  18. 根据权利要求15所述的光刻胶涂覆方法，其中在40-300rpm低转速下，通过旋转平台(240)带动基片(205)旋转(S304)。
  19. 根据权利要求15所述的光刻胶涂覆方法，其中在通过供气单元(10)、导流单元(206、207、209)和抽气单元使气体均匀地吹过涂覆了光刻胶的基片表面时，所述供气单元(10)的气流量不小于供气系统最大气流量的80％。
PCT/CN2017/073211 2017-01-04 2017-02-10 光刻胶涂覆方法和装置 WO2018126507A1 (zh)

Priority Applications (2)

Application Number Priority Date Filing Date Title
US15/758,209 US11061330B2 (en) 2017-01-04 2017-02-10 Methods and apparatuses for coating photoresist
EP17847704.8A EP3567429B1 (en) 2017-01-04 2017-02-10 Photoresist coating method and device

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN201710004036.0 2017-01-04
CN201710004036.0A CN106707690B (zh) 2017-01-04 2017-01-04 光刻胶涂覆方法和装置

Publications (1)

Publication Number Publication Date
WO2018126507A1 true WO2018126507A1 (zh) 2018-07-12

Family

ID=58906662

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2017/073211 WO2018126507A1 (zh) 2017-01-04 2017-02-10 光刻胶涂覆方法和装置

Country Status (4)

Country Link
US (1) US11061330B2 (zh)
EP (1) EP3567429B1 (zh)
CN (1) CN106707690B (zh)
WO (1) WO2018126507A1 (zh)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107783374A (zh) * 2017-11-24 2018-03-09 西安立芯光电科技有限公司 一种控制光刻胶溅射的涂胶机系统
CN109856914B (zh) * 2017-11-30 2023-11-03 上海微电子装备（集团）股份有限公司 涂胶装置及方法
CN110613982B (zh) * 2018-06-19 2022-11-22 国家能源投资集团有限责任公司 过滤组件及其制备方法
CN110941143B (zh) * 2018-09-21 2023-11-17 长鑫存储技术有限公司 光阻旋涂装置以及光阻旋涂方法
CN110673444B (zh) * 2019-09-12 2020-06-09 中国科学院上海光学精密机械研究所 超大超重衬底表面光刻胶均匀涂覆的旋涂设备
CN114200777B (zh) * 2021-12-21 2023-06-13 中国科学院光电技术研究所 一种方形基片夹持装置

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4587139A (en) * 1984-12-21 1986-05-06 International Business Machines Corporation Magnetic disk coating method and apparatus
JPH01151973A (ja) * 1987-12-09 1989-06-14 Fuji Photo Film Co Ltd スピンコーティング装置
JP2001321714A (ja) * 2000-05-15 2001-11-20 Canon Inc 回転塗布装置
JP2004160335A (ja) * 2002-11-12 2004-06-10 Sumitomo Precision Prod Co Ltd 基板処理装置
CN1569995A (zh) * 2003-03-06 2005-01-26 株式会社日本触媒 生产含氟聚酰亚胺膜的方法和设备
CN1961262A (zh) * 2004-04-20 2007-05-09 Sse姐妹半导体设备有限公司 用于基片旋转涂布的装置

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5611886A (en) * 1995-09-19 1997-03-18 Integrated Solutions, Inc. Process chamber for semiconductor substrates
US6402847B1 (en) * 1998-11-27 2002-06-11 Kabushiki Kaisha Toshiba Dry processing apparatus and dry processing method
JP3587776B2 (ja) * 2000-10-10 2004-11-10 東京エレクトロン株式会社 塗布装置及び塗布方法
US7018555B2 (en) * 2002-07-26 2006-03-28 Dainippon Screen Mfg. Co., Ltd. Substrate treatment method and substrate treatment apparatus
KR20040023228A (ko) * 2002-09-11 2004-03-18 삼성전자주식회사 화학적 기계적 평탄화 기계의 폴리싱 헤드
JP4933789B2 (ja) * 2006-02-13 2012-05-16 東京エレクトロン株式会社 基板処理装置、基板処理方法及び記憶媒体
JP4803592B2 (ja) * 2006-06-16 2011-10-26 東京エレクトロン株式会社 液処理装置および液処理方法
DE602007000584D1 (de) * 2006-06-16 2009-04-09 Tokio Electron Ltd Flüssigkeitsbearbeitungsvorrichtung und -verfahren
KR100780814B1 (ko) * 2006-08-16 2007-11-30 주식회사 에스앤에스텍 차폐판 및 이를 구비한 레지스트 코팅장치
JP5029486B2 (ja) * 2008-05-13 2012-09-19 東京エレクトロン株式会社 塗布装置、塗布方法及び記憶媒体
JP4660579B2 (ja) * 2008-09-11 2011-03-30 東京エレクトロン株式会社 キャップメタル形成方法

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4587139A (en) * 1984-12-21 1986-05-06 International Business Machines Corporation Magnetic disk coating method and apparatus
JPH01151973A (ja) * 1987-12-09 1989-06-14 Fuji Photo Film Co Ltd スピンコーティング装置
JP2001321714A (ja) * 2000-05-15 2001-11-20 Canon Inc 回転塗布装置
JP2004160335A (ja) * 2002-11-12 2004-06-10 Sumitomo Precision Prod Co Ltd 基板処理装置
CN1569995A (zh) * 2003-03-06 2005-01-26 株式会社日本触媒 生产含氟聚酰亚胺膜的方法和设备
CN1961262A (zh) * 2004-04-20 2007-05-09 Sse姐妹半导体设备有限公司 用于基片旋转涂布的装置

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of EP3567429A4 *

Also Published As

Publication number Publication date
EP3567429A4 (en) 2020-08-26
US11061330B2 (en) 2021-07-13
CN106707690A (zh) 2017-05-24
EP3567429B1 (en) 2022-09-14
CN106707690B (zh) 2021-08-20
EP3567429A1 (en) 2019-11-13
US20200233306A1 (en) 2020-07-23

Similar Documents

Publication Publication Date Title
WO2018126507A1 (zh) 光刻胶涂覆方法和装置
CN105702604B (zh) 涂敷处理方法和涂敷处理装置
US10672606B2 (en) Coating film forming method, coating film forming apparatus, and storage medium
CN108472676B (zh) 雾滴涂布成膜装置及雾滴涂布成膜方法
CN1794099B (zh) 溶剂去除装置以及溶剂去除方法
US20080057194A1 (en) Coating treatment method, computer-readable storage medium, and coating treatment apparatus
KR20110022530A (ko) 도포 처리 방법, 컴퓨터 기억 매체 및 도포 처리 장치
TW201304876A (zh) 塗布處理方法及塗布處理裝置
JP2012024705A (ja) 塗布処理方法、プログラム、コンピュータ記憶媒体及び塗布処理装置
JP4079212B2 (ja) 塗布膜形成装置およびスピンチャック
KR102006059B1 (ko) 스핀 코팅 프로세스에서 결함 제어를 위한 덮개 플레이트
US10262880B2 (en) Cover plate for wind mark control in spin coating process
JP2008307488A (ja) 塗布処理方法、塗布処理装置、プログラム及びコンピュータ記憶媒体
CN202166827U (zh) 一种涂布设备
WO2019105405A1 (zh) 涂胶装置及方法
CN202057958U (zh) 一种光刻胶喷涂设备
TWI710409B (zh) 塗佈基板的方法及塗佈系統
US20210356868A1 (en) Device and method for photoresist coating
JP2649156B2 (ja) レジスト塗布装置と方法
JPH04340217A (ja) 液処理方法及び液処理装置
CN111672720B (zh) 喷涂方法
JPH01200623A (ja) 半導体製造装置
CN118011736A (zh) 一种光掩模基板涂胶旋风纹改善装置及方法
JPH04314863A (ja) プラズマ反応装置
JPH0496316A (ja) レジスト塗布装置

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 17847704

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE