WO2018120432A1 - 一种具有渗透性的太阳能电池用背场铝浆及其制备方法和应用 - Google Patents
一种具有渗透性的太阳能电池用背场铝浆及其制备方法和应用 Download PDFInfo
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- WO2018120432A1 WO2018120432A1 PCT/CN2017/076572 CN2017076572W WO2018120432A1 WO 2018120432 A1 WO2018120432 A1 WO 2018120432A1 CN 2017076572 W CN2017076572 W CN 2017076572W WO 2018120432 A1 WO2018120432 A1 WO 2018120432A1
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- aluminum paste
- aluminum
- solar cell
- paste
- back surface
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- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 title claims abstract description 56
- 229910052782 aluminium Inorganic materials 0.000 title claims abstract description 40
- 230000035699 permeability Effects 0.000 title claims abstract description 5
- 238000002360 preparation method Methods 0.000 title claims abstract description 5
- 238000002161 passivation Methods 0.000 claims abstract description 22
- 239000011230 binding agent Substances 0.000 claims abstract description 13
- 239000007822 coupling agent Substances 0.000 claims abstract description 9
- 239000001856 Ethyl cellulose Substances 0.000 claims description 8
- ZZSNKZQZMQGXPY-UHFFFAOYSA-N Ethyl cellulose Chemical compound CCOCC1OC(OC)C(OCC)C(OCC)C1OC1C(O)C(O)C(OC)C(CO)O1 ZZSNKZQZMQGXPY-UHFFFAOYSA-N 0.000 claims description 8
- 229920001249 ethyl cellulose Polymers 0.000 claims description 8
- 235000019325 ethyl cellulose Nutrition 0.000 claims description 8
- 238000002156 mixing Methods 0.000 claims description 6
- WUOACPNHFRMFPN-UHFFFAOYSA-N alpha-terpineol Chemical compound CC1=CCC(C(C)(C)O)CC1 WUOACPNHFRMFPN-UHFFFAOYSA-N 0.000 claims description 5
- -1 ammonium fluorosilicate Chemical compound 0.000 claims description 5
- SQIFACVGCPWBQZ-UHFFFAOYSA-N delta-terpineol Natural products CC(C)(O)C1CCC(=C)CC1 SQIFACVGCPWBQZ-UHFFFAOYSA-N 0.000 claims description 5
- 238000000034 method Methods 0.000 claims description 5
- 229940116411 terpineol Drugs 0.000 claims description 5
- 239000003822 epoxy resin Substances 0.000 claims description 3
- 229920000647 polyepoxide Polymers 0.000 claims description 3
- 229920002050 silicone resin Polymers 0.000 claims description 3
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 claims description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical group [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 2
- 229920005989 resin Polymers 0.000 claims description 2
- 239000011347 resin Substances 0.000 claims description 2
- 239000008096 xylene Substances 0.000 claims description 2
- 238000007650 screen-printing Methods 0.000 abstract description 7
- 239000000758 substrate Substances 0.000 abstract description 5
- 239000003795 chemical substances by application Substances 0.000 abstract 1
- 239000012528 membrane Substances 0.000 abstract 1
- 239000012466 permeate Substances 0.000 abstract 1
- 238000006243 chemical reaction Methods 0.000 description 6
- 238000003756 stirring Methods 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 5
- 238000005245 sintering Methods 0.000 description 5
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- XGULBQUJRQPLOG-OOOULUNWSA-N O([C@@H]1[C@@H](C)[C@H](O)CC(=O)O[C@@H]([C@H](/C=C(\C)/C=C/C(=O)[C@H](C)C[C@@H]1CC=O)COCC=1C=CC=CC=1)CC)[C@@H]1O[C@H](C)[C@@H](O)[C@H](N(C)C)[C@H]1O Chemical compound O([C@@H]1[C@@H](C)[C@H](O)CC(=O)O[C@@H]([C@H](/C=C(\C)/C=C/C(=O)[C@H](C)C[C@@H]1CC=O)COCC=1C=CC=CC=1)CC)[C@@H]1O[C@H](C)[C@@H](O)[C@H](N(C)C)[C@H]1O XGULBQUJRQPLOG-OOOULUNWSA-N 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 239000002002 slurry Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/20—Conductive material dispersed in non-conductive organic material
- H01B1/22—Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B13/00—Apparatus or processes specially adapted for manufacturing conductors or cables
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Definitions
- the invention belongs to the field of back field aluminum paste for solar cells, and particularly relates to a back field aluminum paste for solar cells with permeability and a preparation method and application thereof.
- Passivation film is an important component of crystalline silicon solar cell, which can reduce carrier recombination and improve conversion efficiency. It can also improve contact, reduce contact resistance and increase parallel resistance. At the same time, it also has anti-reflection effect.
- the aluminum paste is also required to be formed into a strip-shaped local contact and a back surface contact by screen printing on the passivation film because of the existence of the passivation film. Under normal sintering conditions, it is difficult for the aluminum paste to penetrate the passivation film, and a good ohmic contact cannot be formed, resulting in an increase in series resistance and a reduction in photoelectric conversion efficiency of the cell.
- the passivation film is often treated as follows: a plurality of through-type holes are formed on the passivation film by laser aperture method. So that the aluminum paste coated on the surface of the passivation film can make contact with the substrate of the solar cell through the hole, but this technology needs to rely on a complete set of equipment, the process is complicated, the cost is high; or it can also pass chemical corrosion
- the method uses a silicon paste to screen a silicon paste layer having a point contact pattern on a composite passivation film, and then etches away a region of the composite passivation film not covered by the silicon paste layer by using a chemical etching solution, and then applies aluminum paste, but Chemical corrosion is inevitably polluted.
- the present invention provides a back-field aluminum paste for solar cells having permeability, which is calculated by parts by weight:
- the permeation aid is ammonium fluorosilicate
- the patent finds that the pretreatment of the aluminum powder by the material can effectively promote the penetration of the aluminum powder through the passivation layer to form a good ohmic contact with the substrate of the solar cell.
- the coupling agent is a titanate coupling agent, which helps to improve the dispersibility of the aluminum powder in the slurry.
- the binder is one or a combination of an epoxy resin type binder, a silicone resin type binder, and a xylene resin type binder,
- the organic vehicle is prepared by uniformly mixing ethyl cellulose and terpineol in a mass ratio of 1:10.
- the invention also provides a preparation method of the above aluminum paste, the specific steps are as follows:
- the terpineol is heated to 65-75 ° C under stirring, and ethyl cellulose is added thereto, and stirring is continued until the ethyl cellulose is dissolved, and naturally cooled to normal temperature (25 ° C, the same below);
- the invention also provides an application of the above aluminum paste: after forming a passivation layer on the back surface of the battery, the aluminum paste is directly formed on the passivation surface by screen printing to form an electrode film, and dried.
- the invention has the beneficial effects that the present invention can infiltrate the surface of the substrate of the solar cell without corroding or destroying the battery assembly, thereby forming a good ohmic contact, compared to the prior art aluminum paste coating technology. Easy to operate, no pollution.
- the aluminum paste prepared in this embodiment is directly printed on the passivation surface by 250 mesh screen printing to form an aluminum electrode film into the muffle furnace 220. After drying at °C, the aluminum electrode film layer did not fall off; then the front side silver paste was printed on the other side, and it was sintered in a muffle furnace. The electrical data was tested after sintering: the average photoelectric conversion efficiency of the polycrystalline silicon solar cell was 22.4%.
- Example 1 Compared with Example 1, no ammonium fluorosilicate was added, and the remaining components (and contents) and operation were the same as in Example 1:
- the aluminum paste prepared in this comparative example was directly formed into an aluminum electrode film on the passivation surface by screen printing, and the specific operation was also the same as in Example 1.
- the electrical data was tested after sintering as follows: the average polycrystalline silicon solar cell photoelectric conversion efficiency was 10.6%.
- the aluminum paste prepared in this comparative example was directly formed into an aluminum electrode film on the passivation surface by screen printing, and the specific operation was the same as in Example 1.
- the electrical data was tested after sintering as follows: the average polycrystalline silicon solar cell photoelectric conversion efficiency was 21.2%.
- Example 2 The "halofluorosilicate" in Example 2 was replaced by an equimolar amount of "fluorosilic silicate", and the remaining components (and contents) were the same as in Example 2:
- the aluminum paste prepared in this comparative example was directly formed into an aluminum electrode film on the passivation surface by screen printing, and the specific operation was also the same as in Example 2.
- the electrical data was tested after sintering as follows: the average polycrystalline silicon solar cell photoelectric conversion efficiency was 9.8%.
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Sustainable Energy (AREA)
- Sustainable Development (AREA)
- Life Sciences & Earth Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Dispersion Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Photovoltaic Devices (AREA)
Abstract
本发明属于太阳能电池用背场铝浆领域,特别涉及一种具有渗透性的太阳能电池用背场铝浆及其制备方法和应用。铝浆包括铝粉、渗透辅助剂、偶联剂、粘结剂、有机载体;在电池背表面形成一层钝化层后,直接将该铝浆通过丝网印刷在钝化面上形成电极膜,烘干,即可使铝浆渗透至太阳电池的衬底表面,形成了良好的欧姆接触。
Description
本发明属于太阳能电池用背场铝浆领域,特别涉及一种具有渗透性的太阳能电池用背场铝浆及其制备方法和应用。
钝化膜是晶体硅太阳能电池的重要部件,可以降低载流子复合,提高转化效率;还可以改善接触,降低接触电阻,增加并联电阻;同时,它还具有减反射作用。
在电池背表面形成了一层钝化层后,还需要于该钝化膜上采用丝网印刷的方法将铝浆制备成条形状局域接触和背面点接触,因为钝化膜的存在,在正常的烧结状态下,铝浆很难穿透钝化膜,无法形成良好的欧姆接触,导致串联电阻增大,降低电池片光电转化效率。
为了使得印刷上去的背场铝浆和太阳电池的衬底有良好的欧姆接触、收集电流,往往会对钝化膜进行如下处理:通过激光开孔法在钝化膜上形成若干贯穿型的孔洞,从而使涂覆在钝化膜表面的铝浆能够通过孔洞与太阳能电池的衬底实现接触,但这一技术需要依靠一整套的设备,工艺复杂,产生的成本高;或者还可以通过化学腐蚀法在复合钝化膜上采用硅浆料丝网印刷具有点接触图案的硅浆层,然后采用化学腐蚀液腐蚀掉复合钝化膜中未被硅浆层覆盖的区域,再上铝浆,但化学腐蚀又不可避免会产生污染。
发明内容
为解决上述技术问题,本发明提供了一种具有渗透性的太阳能电池用背场铝浆,按重量份数计算包括:
其中,渗透辅助剂为氟硅酸铵,本专利发现采用该物质对铝粉进行预处理后,能够有效地促进铝粉渗透通过钝化层与太阳电池的衬底形成良好的欧姆接触,
偶联剂为钛酸酯偶联剂,有助于提高铝粉在浆料中的分散性,
粘结剂为环氧树脂型粘结剂、有机硅树脂型粘结剂、二甲苯树脂型粘结剂中的一种或几种的组合,
有机载体由乙基纤维素与松油醇按1:10的质量比混合均匀而成。
本发明还提供了一种上述铝浆的制备方法,具体步骤为:
(1)配制有机载体,
在搅拌状态下将松油醇加热至65~75℃,向其中加入乙基纤维素后继续搅拌至乙基纤维素溶解,自然冷却至常温(25℃,下同);
(2)将铝粉与渗透辅助剂混合均匀,得到经预处理的铝粉;
(3)向步骤(1)的有机载体中先加入偶联剂并充分分散,再加入步骤(2)中得到的经预处理的铝粉充分搅拌,最后加入粘结剂搅拌均匀得到铝浆。
本发明还提供了一种上述铝浆的应用:在电池背表面形成一层钝化层后,直接将该铝浆通过丝网印刷在钝化面上形成电极膜,烘干。
本发明的有益效果在于:相比于现有的铝浆涂覆技术,本发明无需对电池组件进行腐蚀、破坏即可使铝浆渗透至太阳电池的衬底表面,形成了良好的欧姆接触。操作方便、无污染。
实施例1
(1)配制有机载体,
在搅拌状态下将25重量份的松油醇加热至70℃,向其中加入2.5重量份的乙基纤维素后继续搅拌至乙基纤维素完全溶解,自然冷却至常温;
(2)将72重量份的铝粉与3重量份的氟硅酸铵混合研磨均匀,得到经预处理的铝粉;
(3)向步骤(1)得到的有机载体中先加入1.2重量份的偶联剂TMC-101并充分分散,再加入步骤(2)中得到的经预处理的铝粉充分搅拌,最后加入4重量份的电子浆料用环氧树脂型粘结剂搅拌均匀得到铝浆。
在125mm×125mm的单晶硅片的背表面形成一层钝化层后,直接将本实施例制备的铝浆通过250目丝网印刷在钝化面上形成铝电极膜,进马弗炉220℃烘干,烘干以后铝电极膜层无脱落;然后换另一面印刷正面银浆,进马弗炉烧结,烧结后测试其电性数据为:平均多晶硅太阳能电池光电转换效率为22.4%。
对比实施例1
相比于实施例1未加入任何氟硅酸铵,其余各组分(及含量)、操作均同实施例1:
直接将本对比实施例制备的铝浆通过丝网印刷在钝化面上形成铝电极膜,具体操作也同实施例1。烧结后测试其电性数据为:平均多晶硅太阳能电池光电转换效率为10.6%。
实施例2
(1)配制有机载体,
在搅拌状态下将28重量份的松油醇加热至75℃,向其中加入2.8重量份的乙基纤维素后继续搅拌至乙基纤维素完全溶解,自然冷却至常温;
(2)将75重量份的铝粉与3.5重量份的氟硅酸铵混合研磨均匀,得到经预处理的铝粉;
(3)向步骤(1)得到的有机载体中先加入1.4重量份的偶联剂TMC-101并充分分散,再加入步骤(2)中得到的经预处理的铝粉充分搅拌,最后加入4重量份的电子浆料用有机硅树脂型粘结剂搅拌均匀得到铝浆。
直接将本对比实施例制备的铝浆通过丝网印刷在钝化面上形成铝电极膜,具体操作同实施例1。烧结后测试其电性数据为:平均多晶硅太阳能电池光电转换效率为21.2%。
对比实施例2
采用等摩尔量的“氟硅酸钠”代替实施例2中的“氟硅酸铵”,其余各组分(及含量)、操作均同实施例2:
直接将本对比实施例制备的铝浆通过丝网印刷在钝化面上形成铝电极膜,具体操作也同实施例2。烧结后测试其电性数据为:平均多晶硅太阳能电池光电转换效率为9.8%。
Claims (7)
- 如权利要求1所述的具有渗透性的太阳能电池用背场铝浆,其特征在于:所述的渗透辅助剂为氟硅酸铵。
- 如权利要求1所述的具有渗透性的太阳能电池用背场铝浆,其特征在于:所述的偶联剂为钛酸酯偶联剂。
- 如权利要求1所述的具有渗透性的太阳能电池用背场铝浆,其特征在于:所述的粘结剂为环氧树脂型粘结剂、有机硅树脂型粘结剂、二甲苯树脂型粘结剂中的一种或几种的组合。
- 如权利要求1所述的具有渗透性的太阳能电池用背场铝浆,其特征在于:所述的有机载体由乙基纤维素与松油醇按1:10的质量比混合均匀而成。
- 一种如权利要求1至5任一项所述的铝浆的制备方法,其特征在于:所述的制备方法为,(1)配制有机载体;(2)将铝粉与渗透辅助剂混合均匀,得到经预处理的铝粉;(3)向步骤(1)的有机载体中先加入偶联剂并充分分散,再加入步骤(2)中得到的经预处理的铝粉充分搅拌,最后加入粘结剂搅拌均匀得到铝浆。
- 一种如权利要求1至5任一项所述的铝浆的应用,其特征在于:所述的应用为,在电池背表面形成一层钝化层后,直接将所述的铝浆通过丝网印刷在钝化面上形成电极膜,烘干。
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CN111463142A (zh) * | 2020-04-09 | 2020-07-28 | 浙江爱旭太阳能科技有限公司 | 一种高效检测perc铝浆腐蚀性的方法 |
CN117059303A (zh) * | 2023-09-05 | 2023-11-14 | 江苏飞特尔通信有限公司 | 一种ltcc滤波器外部电极的导电铝浆及其制备方法 |
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