WO2016124005A1 - 一种全铝背场晶体硅太阳能电池用铝浆及其制备方法 - Google Patents

一种全铝背场晶体硅太阳能电池用铝浆及其制备方法 Download PDF

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WO2016124005A1
WO2016124005A1 PCT/CN2015/092014 CN2015092014W WO2016124005A1 WO 2016124005 A1 WO2016124005 A1 WO 2016124005A1 CN 2015092014 W CN2015092014 W CN 2015092014W WO 2016124005 A1 WO2016124005 A1 WO 2016124005A1
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aluminum
solar cell
crystalline silicon
silicon solar
resin
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PCT/CN2015/092014
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English (en)
French (fr)
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朱鹏
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南通天盛新能源科技有限公司
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Priority to US15/325,734 priority Critical patent/US10193005B2/en
Publication of WO2016124005A1 publication Critical patent/WO2016124005A1/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C4/00—Compositions for glass with special properties
    • C03C4/14—Compositions for glass with special properties for electro-conductive glass
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C8/00—Enamels; Glazes; Fusion seal compositions being frit compositions having non-frit additions
    • C03C8/14—Glass frit mixtures having non-frit additions, e.g. opacifiers, colorants, mill-additions
    • C03C8/18—Glass frit mixtures having non-frit additions, e.g. opacifiers, colorants, mill-additions containing free metals
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C8/00—Enamels; Glazes; Fusion seal compositions being frit compositions having non-frit additions
    • C03C8/22—Enamels; Glazes; Fusion seal compositions being frit compositions having non-frit additions containing two or more distinct frits having different compositions
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D11/00—Inks
    • C09D11/02—Printing inks
    • C09D11/03—Printing inks characterised by features other than the chemical nature of the binder
    • C09D11/033—Printing inks characterised by features other than the chemical nature of the binder characterised by the solvent
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D11/00—Inks
    • C09D11/02—Printing inks
    • C09D11/03—Printing inks characterised by features other than the chemical nature of the binder
    • C09D11/037—Printing inks characterised by features other than the chemical nature of the binder characterised by the pigment
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D11/00—Inks
    • C09D11/02—Printing inks
    • C09D11/10—Printing inks based on artificial resins
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D11/00—Inks
    • C09D11/02—Printing inks
    • C09D11/10—Printing inks based on artificial resins
    • C09D11/106—Printing inks based on artificial resins containing macromolecular compounds obtained by reactions only involving carbon-to-carbon unsaturated bonds
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D11/00—Inks
    • C09D11/52—Electrically conductive inks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/02—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of metals or alloys
    • H01B1/023—Alloys based on aluminium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/20—Conductive material dispersed in non-conductive organic material
    • H01B1/22—Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2204/00—Glasses, glazes or enamels with special properties
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2207/00—Compositions specially applicable for the manufacture of vitreous enamels
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Definitions

  • the invention relates to an aluminum paste for a crystalline silicon solar cell, in particular to an aluminum paste for an all-aluminum back field crystalline silicon solar cell and a preparation method thereof.
  • a solar cell is a semiconductor device that converts solar energy into electrical energy. Under the illumination condition, a photo-generated current is generated inside the solar cell, and the current can be output through the electrode.
  • the commercial crystalline silicon battery is still based on conventional batteries, the process flow is relatively simple, the manufacturing cost is relatively low, and the cost performance is high, but the conventional battery has the following defects, mainly that the back electrode is directly printed on the silicon wafer to form an ohmic contact, silver
  • the electrode is easy to form metal defects in the silicon wafer, which makes the electrode become a serious leakage area, which reduces the photoelectric conversion efficiency of the solar cell; the back electrode edge needs to be covered by the aluminum back field, the back electrode width is increased, and the back electrode paste is added.
  • the cost is not conducive to the improvement of photoelectric conversion efficiency.
  • the patent provides an aluminum paste for an all-aluminum back field crystalline silicon solar cell and a preparation method thereof.
  • Chinese Patent Application No. [201110208995.7] discloses a back field pole of a crystalline silicon battery and a printing process thereof. The process mainly prints an aluminum back field on the back side of the silicon wafer, and then prints the back electrode, which can better solve the problem.
  • the deficiencies of the prior art can improve the photoelectric conversion efficiency of the crystalline silicon battery.
  • This patent mainly describes the preparation process of the all-aluminum back field, and does not describe the preparation method of the aluminum paste and the back-pole paste for the all-aluminum back-field crystalline silicon solar cell.
  • Chinese patent [CN103151097A] discloses a preparation method of slurry for all-aluminum back field of crystalline silicon battery
  • the invention relates to a method for preparing a back-electrode slurry for a full-aluminum back field of a crystalline silicon battery, in which a low melting point coated base metal is added, wherein the coating is tin or silver, and is coated.
  • the coating is one or more of the base metals.
  • the silver powder and the aluminum back field can form a good sintered intermediate layer, the expansion coefficient is matched with the aluminum back field, and the turtle is not easy to be turtle.
  • the patent mainly describes the back electrode slurry.
  • Chinese patent [CN103746043A] discloses a preparation method of an all-aluminum doped solar cell, in particular to a method for preparing an N-type solar cell, firstly preparing an all-aluminum back field by using a full back-field screen without a back electrode pattern. After high temperature sintering, a good PN junction is formed; then the low temperature sintered silver paste is used as a slurry, and the back electrode is prepared by low temperature sintering, which overcomes the problem that the conventional silver aluminum paste back electrode can only be sintered at a high temperature, due to the back electrode.
  • the sintering temperature is low, so that the sintering depth of the back electrode is less than the depth of aluminum diffusion, and does not affect the quality of the PN junction.
  • the patent mainly describes a preparation method of all-aluminum back field doping of an N-type solar cell, which is compared with the conventional process. Compared with the process, the low-temperature sintering process is added, which conflicts with the production line, and the preparation method of the silver and aluminum paste for the all-aluminum back field is not specifically described. Similar patents also include [CN202996849U] and [CN102903765A].
  • Cijögren's Patent [CN103219062A] discloses a method for preparing a polymer thick film solder alloy conductor composition, which relates to a solder alloy powder, which is composed of low melting point tin, silver and copper. It can be used in other applications where conductivity (low resistivity) is required, but the composition is not suitable for crystalline silicon solar cells.
  • the object of the present invention is to mention only the silver paste for all-aluminum back field in the above solution.
  • a method for preparing an all-aluminum back field crystalline silicon solar cell, and a method for preparing an aluminum paste for an all-aluminum back field and an improved process thereof, and providing an aluminum paste for an all-aluminum back field crystalline silicon solar cell The main characteristics of the aluminum paste are: changing the back aluminum formula on the basis of not changing the existing process, thereby improving the adhesion with the ordinary crystalline silicon solar cell silver paste, and effectively improving the photoelectric conversion efficiency of the crystalline silicon battery.
  • an aluminum paste for an all-aluminum back field crystalline silicon solar cell comprising: 60-70% aluminum powder; 5-10% nano metal oil solution; - 10% inorganic binder; 10-20% organic binder; 5-30% organic solvent; 1-5% auxiliary; and the sum of the mass percentages of the components is 100%.
  • the aluminum powder is a spherical aluminum powder having an average particle diameter of 0.8-10 ⁇ m, a purity of more than 99.8%, and a span of 2.0-4.0.
  • the nano metal oily solution is an oily solution containing one or more of nano aluminum, tin, aluminum tin, aluminum silicon, and the purity thereof is greater than 99%.
  • the nano metal oily solution has an average particle diameter of 50 to 100 nm, and the oily solution is one or both of terpineol and butyl carbitol.
  • the inorganic binder is a core-shell type glass powder, which is mainly obtained by mixing low-melting glass powder and high-melting glass powder according to a mass ratio of 1:1 to 2:1, followed by heating, smelting, smashing and screening.
  • the shell structure of the inorganic binder is a low-melting glass frit, and the core structure is a high-melting glass frit.
  • the low-melting glass frit is a lanthanide mixture having a melting point of 350-450 ° C
  • the high-melting glass frit is a zinc-based mixture having a melting point of 550-650 ° C
  • the inorganic binder has a melting point of 480- 530 ° C.
  • the inorganic binder has a particle diameter D50 of 2-2.5 ⁇ m and a particle size span (D90+D10)/D50 of 2-3, and has a step-by-step assisting effect.
  • the auxiliary agent is a reducing auxiliary agent, which is one or more of activated carbon, nano carbon and conductive carbon, which can prevent the slurry from being excessively oxidized.
  • the organic binder is mainly mixed by a resin and an organic solvent in a mass percentage of 1:1 to 1:4, and the organic binder obtained by mixing and dispersing has a viscosity of 180-900 dpa.s, and the resin is rosin and benzoin.
  • the resin is rosin and benzoin.
  • a method for preparing an aluminum paste for an all-aluminum back field crystalline silicon solar cell comprising the steps of:
  • inorganic binder The low-melting glass powder and the high-melting glass powder are added to the mixer in a mass ratio of 1:1 to 2:1, uniformly mixed, and placed in a porcelain crucible at 160 ° C in an oven. Drying for 2h, then smelting in a high temperature furnace at 500 ° C for 1.5 h, drying the pulverized sieve after chilling to obtain an inorganic binder;
  • the resin and the organic solvent are mixed in a mass percentage of 1:1 to 1:4, and then poured into a dispersing machine and dispersed for 30 to 60 minutes, and dispersed and dissolved to obtain a transparent and uniform organic binder.
  • the resin is one or more of rosin, benzoin, phenolic resin, polyvinyl chloride resin, amber, shellac, polyester resin, polyamide resin and epoxy resin;
  • the aluminum paste for all-aluminum back field crystalline silicon solar cell according to the present invention the nano metal oil solution in the composition contributes to better contact between the slurry and the silicon substrate, lowers the bulk resistance, and improves the electrical conductivity.
  • the auxiliary agent is a reducing auxiliary agent, which can effectively prevent the metal from being oxidized, and all materials are mixed and processed to form a final mixed slurry.
  • the aluminum paste for an all-aluminum back field crystalline silicon solar cell of the present invention is a reducing auxiliary agent, which can effectively prevent the metal from being oxidized, and all materials are mixed and processed to form a final mixed slurry.
  • the aluminum paste for an all-aluminum back field crystalline silicon solar cell directly reduces the photoelectric conversion efficiency of the solar cell by directly printing the back electrode on the silicon wafer, and the aluminum of the present invention
  • the slurry can be formed on the crystalline silicon by full back-field screen printing without back electrode pattern, which can realize the good implementation of the back surface preparation process of the all-aluminum back field, avoiding the aluminum paste after the traditional printing process.
  • the pores of the back electrode and the back electrode are prone to cracks and flaking at the contact point, the conductivity is poor, the adhesion between the back electrode and the back aluminum layer is poor, and the adhesion of the slurry is good, and it is easy to be better with the silver paste printed later.
  • Adhesion the nano metal oil solution added in the slurry can make the slurry have good contact with the silicon wafer, avoid the aluminum back layer falling off, can form a good ohmic contact, and improve the photoelectric conversion efficiency, thereby improving the enterprise. Economic benefits.
  • the aluminum paste for an all-aluminum back field crystalline silicon solar cell comprises: 60-70% aluminum powder; 5-10% nano metal oil solution; 1-10% inorganic binder; 10-20% organic binder; 5-30% organic solvent; 1-5% auxiliary; and the sum of the mass percentages of the components is 100%.
  • the aluminum powder is a spherical aluminum powder, the average particle diameter is 0.8-10 ⁇ m, the purity is greater than 99.8%, and the span is 2.0-4.0.
  • the nano metal oily solution is an oily solution containing one or more of nano aluminum, tin, aluminum tin, aluminum silicon, the purity thereof is greater than 99%, and the average particle diameter of the nano metal oily solution is 50-100 nm,
  • the oily solution is one or both of terpineol and butyl carbitol.
  • the inorganic binder is a core-shell type glass powder, which is mainly obtained by mixing low-melting glass powder and high-melting glass powder according to a mass ratio of 1:1 to 2:1, followed by heating, smelting, smashing and screening.
  • the shell structure of the inorganic binder is a low-melting glass frit, and the core structure is a high-melting glass frit, wherein the low-melting glass frit is a lanthanide mixture having a melting point of 350-450 ° C, with preferential melting aid.
  • the high-melting glass frit is a zinc-based mixture having a melting point of 550-650 ° C and having a deep-melting effect at a high temperature, and the inorganic binder has a melting point of 480-530 ° C.
  • the inorganic binder has a particle diameter D50 of 2-2.5 ⁇ m and a particle size span (D90+D10)/D50 of 2-3, and has a step-by-step assisting effect.
  • the auxiliary agent is a reducing auxiliary agent, which is one or more of activated carbon, nano carbon and conductive carbon, which can prevent the slurry from being excessively oxidized, and has no residue after burning, and is environmentally friendly.
  • the organic binder is mainly mixed by a resin and an organic solvent in a mass percentage of 1:1 to 1:4, and the organic binder obtained by mixing and dispersing has a viscosity of 180-900 dpa.s, and the resin is rosin and benzoin.
  • the resin is rosin and benzoin.
  • Preparation of inorganic binder Weigh 60% of low-melting glass powder and 40% high-melting glass powder, which are mixed with the total inorganic binder, mixed uniformly with a mixer, placed in a porcelain crucible, and dried in an oven at 160 ° C for 2 h. After that, it was smelted at 500 ° C for 1.5 h in a high-temperature furnace, and dried, pulverized, and sieved after chilling.
  • organic binder Mix 20% phenolic resin and 80% organic solvent in total mass binder content, disperse in dispersing machine for 30-60min, disperse and dissolve, and obtain transparent and uniform organic Binder.
  • the nano metal oily solution is a composition obtained by mixing nano aluminum particles, nano tin particles and terpineol in a ratio of mass ratio of 1:1:1, and weigh 60% aluminum powder and 5% nano metal according to the mass ratio of aluminum paste.
  • the aluminum paste for the all-aluminum back field crystalline silicon solar cell prepared above is passed through a 250 mesh back electrodeless mesh
  • the screen printing was formed on a 156 mm ⁇ 156 mm polycrystalline silicon wafer to form an all-aluminum back surface, which was dried in a muffle furnace at 240 ° C.
  • the back electrode is printed on the back of the all-aluminum, dried in a muffle furnace at 220 ° C, and then printed on the other side to print the front silver paste, and then sintered into the infrared fast-fired mesh belt furnace, the peak temperature is 790-810.
  • °C the prepared slurry performance test meets the requirements.
  • Preparation of inorganic binder Weigh 55% of low-melting glass powder and 45% of high-melting glass powder, which are mixed with the total inorganic binder, mixed uniformly with a mixer, placed in a porcelain crucible, and dried in an oven at 160 ° C for 2 h. After that, it was smelted at 500 ° C for 1.5 h in a high-temperature furnace, and dried, pulverized, and sieved after chilling.
  • organic binder Mix 20% phenolic resin and 80% organic solvent in total mass binder content, disperse in dispersing machine for 30-60min, disperse and dissolve, and obtain transparent and uniform organic Binder.
  • the nano metal oily solution is a composition obtained by mixing nano aluminum particles, nano tin particles and terpineol in a ratio of mass ratio of 1:1:1, and weighing 65% aluminum powder and 5% nano metal oil according to the mass ratio of aluminum paste.
  • Solution 7% inorganic binder, 12% organic binder, 8% organic solvent and 3% activated carbon auxiliary, uniformly mixed with a disperser, and ground to 16-20 ⁇ m with a three-roll mill to obtain an all-aluminum back Field aluminum paste.
  • the sample prepared by using the above-mentioned aluminum paste for tin-containing all-aluminum back-field crystalline silicon solar cell was formed by screen printing on a 156 mm ⁇ 156 mm polycrystalline silicon wafer through a 250-mesh backless screen screen, and formed into a muffle furnace at 240 ° C for drying. dry. After drying, the back of the aluminum is not peeled off, then the back electrode is printed on the back of the all-aluminum, dried in a muffle furnace at 220 ° C, and then printed on the other side to print the front silver paste, and then sintered into the infrared fast-fired mesh belt furnace, the peak temperature is 790-810. °C.
  • the prepared slurry performance test meets the requirements.
  • Preparation of inorganic binder Weigh 50% of low-melting glass powder and 50% high-melting glass powder, which are the total inorganic binder content, mix well with a mixer, put into porcelain crucible, and dry in an oven at 160 ° C for 2 h. After that, it was smelted at 500 ° C for 1.5 h in a high-temperature furnace, and dried, pulverized, and sieved after chilling.
  • organic binder weigh 20% rosin, 20% phenolic resin and 60% organic solvent in total mass binder, and then disperse on the disperser for 30-60min, disperse and dissolve, and obtain transparency. A uniform organic binder.
  • the nano metal oily solution is a composition obtained by mixing nano aluminum particles, nano aluminum tin particles and terpineol in a ratio of 1:1:1 by mass, and 62% aluminum powder and 5% nano metal are weighed according to the mass parts of the aluminum paste. Oily solution, 8% inorganic binder, 12% organic binder, 8% organic solvent and 5% nanocarbon additive, uniformly mixed with a disperser, and ground to 16-20 microns with a three-roll mill to obtain the whole Aluminum back field aluminum paste.
  • the sample prepared by using the above-mentioned aluminum paste for tin-containing all-aluminum back-field crystalline silicon solar cell was formed by screen printing on a 156 mm ⁇ 156 mm polycrystalline silicon wafer through a 250-mesh backless screen screen, and formed into a muffle furnace at 240 ° C for drying. dry. After drying, the back of the aluminum is not peeled off, then the back electrode is printed on the back of the all-aluminum, dried in a muffle furnace at 220 ° C, and then printed on the other side to print the front silver paste, and then sintered into the infrared fast-fired mesh belt furnace, the peak temperature is 790-810. °C.
  • the prepared slurry performance test meets the requirements.
  • Preparation of inorganic binder Weigh 65% of the total inorganic binder content, low-melting glass powder, 35% high-melting glass powder, mix well with the mixer, put it into the porcelain crucible, and dry it in an oven at 160 ° C for 2 h. After that, it was smelted at 500 ° C for 1.5 h in a high-temperature furnace, and dried, pulverized, and sieved after chilling.
  • the preparation of organic binder weigh 20% of the total organic binder content of phenolic resin and After mixing 80% of the organic solvent, it was dispersed on a disperser for 30-60 minutes, and dispersed and dissolved to obtain a transparent and uniform organic binder.
  • the nano metal oily solution is a composition obtained by mixing nano aluminum particles, nano aluminum silicon particles and terpineol in a ratio of 1:1:1 by mass, and 60% aluminum powder and 6% nano metal are weighed according to the mass parts of the aluminum paste. Oily solution, 7% inorganic binder, 11% organic binder, 12% organic solvent and 3% activated carbon auxiliary, uniformly mixed with a disperser, and ground to 16-20 microns with a three-roll mill to obtain all-aluminum Back field aluminum paste.
  • the sample prepared by using the above-mentioned aluminum paste for tin-containing all-aluminum back-field crystalline silicon solar cell was formed by screen printing on a 156 mm ⁇ 156 mm polycrystalline silicon wafer through a 250-mesh backless screen screen, and formed into a muffle furnace at 240 ° C for drying. dry. After drying, the back of the aluminum is not peeled off, then the back electrode is printed on the back of the all-aluminum, dried in a muffle furnace at 220 ° C, and then printed on the other side to print the front silver paste, and then sintered into the infrared fast-fired mesh belt furnace, the peak temperature is 790-810. °C.
  • the prepared slurry performance test meets the requirements.
  • Preparation of inorganic binder Weigh 60% of low-melting glass powder and 40% high-melting glass powder, which are mixed with a mixer, placed in a porcelain crucible, and dried in an oven at 160 ° C for 2 h. After that, it was smelted at 500 ° C for 1.5 h in a high-temperature furnace, and dried, pulverized, and sieved after chilling.
  • organic binder weigh 20% rosin, 20% phenolic resin and 60% organic solvent in total mass binder, and then disperse on the disperser for 30-60min, disperse and dissolve, and obtain transparency. A uniform organic binder.
  • the nano metal oily solution is a composition obtained by mixing nano aluminum particles, nano aluminum tin particles, nano aluminum silicon particles terpineol in a ratio of 1:1:1:1 by mass, and weighing 62% aluminum according to the mass part of the aluminum paste.
  • the sample prepared by using the above-mentioned aluminum paste for tin-containing all-aluminum back-field crystalline silicon solar cell was formed by screen printing on a 156 mm ⁇ 156 mm polycrystalline silicon wafer through a 250-mesh backless screen screen, and formed into a muffle furnace at 240 ° C for drying. dry. After drying, the back of the aluminum is not peeled off, then the back electrode is printed on the back of the all-aluminum, dried in a muffle furnace at 220 ° C, and then printed on the other side to print the front silver paste, and then sintered into the infrared fast-fired mesh belt furnace, the peak temperature is 790-810. °C.
  • the prepared slurry performance test meets the requirements.
  • Preparation of inorganic binder Weigh 50% of the total inorganic binder content, low melting glass powder, 50% high melting glass powder, mix well with the mixer, put it into the porcelain crucible, and dry it in the oven at 160 ° C for 2 h. After that, it was smelted at 500 ° C for 1.5 h in a high-temperature furnace, and dried, pulverized, and sieved after chilling.
  • organic binder Mix 20% phenolic resin and 80% organic solvent in total mass binder content, disperse in dispersing machine for 30-60min, disperse and dissolve, and obtain transparent and uniform organic Binder.
  • the nano metal oily solution is a composition obtained by mixing nano aluminum particles, nano aluminum tin particles, nano aluminum silicon particles and terpineol in a ratio of 1:1:1:1 by mass, and weighing 70% of the mass of the aluminum paste.
  • the aluminum paste for tin-containing all-aluminum back-field crystalline silicon solar cells was passed through 250 mesh.
  • No back electrode screen screen printing was formed on a 156 mm ⁇ 156 mm polycrystalline silicon wafer to form an all-aluminum back surface, which was dried at 240 ° C in a muffle furnace.
  • the back electrode is printed on the back of the all-aluminum, dried in a muffle furnace at 220 ° C, and then printed on the other side to print the front silver paste, and then sintered into the infrared fast-fired mesh belt furnace, the peak temperature is 790-810. °C.
  • the prepared slurry performance test meets the requirements.

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Abstract

一种全铝背场晶体硅太阳能电池用铝浆及其制备方法，该铝浆主要包括60-70%的铝粉、5-10%的纳米金属油性溶液、1-10%的无机粘结剂、10-20%的有机粘结剂、5-30%的有机溶剂、1-5%的助剂，所制备的铝浆可以良好地实施全铝背场的背表面制备工艺，且浆料的附着力好，易于与之后印刷的银浆更好的附着，同时浆料中添加的纳米金属油性溶液可以使浆料与硅片有较好的接触性，避免铝背层脱落，能形成良好的欧姆接触，从而提高了光电转换效率，为企业提高了经济效益。

Description

一种全铝背场晶体硅太阳能电池用铝浆及其制备方法 技术领域
本发明涉及晶体硅太阳能电池用铝浆，具体涉及一种全铝背场晶体硅太阳能电池用铝浆及其制备方法。
背景技术
太阳能电池是一种能将太阳能转换成电能的半导体器件，在光照条件下太阳能电池内部会产生光生电流，通过电极可将电流输出。具有P型硅的太阳能电池结构，其负电极通常在电池的正面，而其正电极在背面。当光照射时，合适波长的辐射导致了半导体中产生空穴-电子对。在P-N结上存在的电势差使空穴和电子以相反的方向迁移穿过该结，从而产生了电流的流动，这种流动可将电能传递给外电路。目前商业化的晶体硅电池仍然以常规电池为主，工艺流程较为简单，制造成本较为低廉，性价比较高，但常规电池具有以下缺陷，主要是背电极直接印刷在硅片上形成欧姆接触，银电极易在硅片内形成金属缺陷，使电极成为严重的漏电区域，降低了太阳能电池的光电转换效率；背电极边缘需要被铝背场覆盖，增加了背电极宽度，增加了背电极浆料成本，不利于光电转换效率的提高。为解决该制作方式所产生的不足，提高晶硅太阳能电池的光电转换效率，本专利提供了一种全铝背场晶体硅太阳能电池用铝浆及其制备方法。
中国专利申请号[201110208995.7]公开了一种晶硅电池背场背极及其印刷工艺，该工艺主要是在硅片的背面先印刷铝背场，然后再印刷背电极，它可较好的解决现有技术的不足，可提高晶硅电池的光电转换效率。该专利主要讲述的是全铝背场的制备工艺，而未对全铝背场晶体硅太阳能电池用铝浆及背极浆料进行制备方法的说明。
中国专利[CN103151097A]公开了一种晶硅电池全铝背场用浆料的制备方 法，特别涉及一种晶体硅电池全铝背场用背极浆料的制备方法，该浆料中主要是添加了一种低熔点包覆贱金属，其中包覆物为锡或银，被包覆物为贱金属中的一种或几种，在改善全铝背场的背电极制备工艺的同时可使银粉与铝背场形成良好的烧结中间层、膨胀系数与铝背场匹配、不易龟裂及剥落、具有良好的导电性能，又能最大限度的保证浆料的欧姆接触性能和焊带的焊接性能，使全铝背场工艺得到了全面实施，该专利主要描述了背极浆料的改进与其工艺的完善，而未改变铝浆的特性,同时，这种背极浆料的成本较高，且未说明铝背场与银浆的附着情况，与本专利提出的改变铝浆有本质区别。
中国专利[CN103746043A]公开了一种全铝掺杂太阳能电池的制备方法，特别涉及一种N型太阳能电池的制备方法，首先采用不含背电极图形的全背场网版制备全铝背场，并经过高温烧结，形成良好的PN结；然后采用低温烧结银浆为浆料，经过低温烧结制备出背电极，克服了传统银铝浆背电极只能在高温下完成烧结的问题，由于背电极的烧结温度低，使得背电极的烧结深度小于铝扩散的深度，不会影响到PN结的质量，该专利主要描述一种N型太阳能电池全铝背场掺杂的制备方法，与传统工艺相比，该工艺添加了低温烧结工艺，与生产线有冲突，且未具体描述全铝背场专用银、铝浆的制备方法。相似专利还包括[CN202996849U]和[CN102903765A]。
中国专利[CN103219062A]公开了一种聚合物厚膜焊料合金导体组合物的制备方法，其中涉及一种焊料合金粉，该焊料合金粉由低熔点的锡、银、铜组成，制成的组合物可用于其它需要导电性(低电阻率)的应用，但是该组合物并不适用于晶体硅太阳能电池。
发明内容
发明目的：本发明的目的在于，针对上述方案中只提到对全铝背场用银浆 及全铝背场晶体硅太阳能电池的制备方法，而未有关于全铝背场用铝浆的制备方法及其改善的工艺，而提供一种全铝背场晶体硅太阳能电池用铝浆，该铝浆的主要特点为：在不改变现有工艺的基础上，改变背铝配方，从而改善与普通晶体硅太阳能电池银浆的附着力，有效的提高晶体硅电池的光电转换效率。
本发明的目的可通过下述技术方案来实现：一种全铝背场晶体硅太阳能电池用铝浆，所述铝浆包含：60-70％铝粉；5-10％纳米金属油性溶液；1-10％无机粘结剂；10-20％有机粘结剂；5-30％有机溶剂；1-5％助剂；且各组份的质量百分比之和为100％。
所述铝粉为球形铝粉，平均粒径在0.8-10μm，纯度大于99.8％，跨度为2.0-4.0。
所述纳米金属油性溶液为包含纳米铝、锡、铝锡、铝硅中一种或几种的油性溶液，其纯度大于99％。
所述纳米金属油性溶液的平均粒径为50-100nm，其油性溶液为松油醇、丁基卡必醇中的一种或两种。
所述的无机粘结剂为核壳型玻璃粉，主要是通过低熔点玻璃粉和高熔点玻璃粉按1:1-2:1的质量百分比混合后加热熔炼、冷粹、粉碎、筛选而得，其中无机粘结剂的壳层结构为低熔点玻璃粉，核心结构为高熔点玻璃粉。
所述的低熔点玻璃粉为铋系混合物，其熔点为350-450℃，所述高熔点玻璃粉为锌系混合物，其熔点为550-650℃，所述无机粘结剂的熔点为480-530℃。
所述的无机粘结剂粒径D50为2-2.5μm，粒径跨度(D90+D10)/D50为2-3，具有分步助融的作用。
所述助剂为还原性助剂，其为活性炭、纳米碳、导电碳中的一种或几种，可以防止浆料过快氧化。
所述有机粘结剂主要由树脂及有机溶剂按1:1-1:4的质量百分比混合，经混合分散后得到的有机粘结剂粘度为180-900dpa.s，所述树脂为松香、安息香、酚醛树脂、聚氯乙烯树脂、琥珀、虫胶、聚酯树脂、聚酰胺树脂、环氧树脂中的一种或几种。
一种制备全铝背场晶体硅太阳能电池用铝浆的方法，包括以下步骤：
(1)无机粘结剂的制备：将低熔点玻璃粉和高熔点玻璃粉按1:1-2:1的质量百分比加入混料机中混合均匀，装入瓷坩埚内，在烘箱中160℃干燥2h，然后放入高温炉中500℃熔炼1.5h，冷粹后烘干粉碎筛取得到无机粘结剂；
(2)有机粘结剂的制备：将树脂及有机溶剂按1:1-1:4的质量百分比混合，然后倒入分散机上分散30～60min，分散溶解后得到透明均一的有机粘结剂，其中树脂采用松香、安息香、酚醛树脂、聚氯乙烯树脂、琥珀、虫胶、聚酯树脂、聚酰胺树脂、环氧树脂中的一种或几种；
(3)铝浆配制：称取占总铝浆含量60-70％铝粉、5-10％纳米金属油性溶液、1-10％无机粘结剂、10-20％有机粘结剂、5-30％有机溶剂及1-10％助剂用分散机进行均匀混合；
(4)成品制备：将步骤(3)混合后的铝浆通过三辊研磨剂进行研磨至16～20um得到全铝背场铝浆。
本发明所述的一种全铝背场晶体硅太阳能电池用铝浆，其成分中的纳米金属油性溶液有助于浆料与硅基材更好的接触、降低体相电阻、提高电导率，其中的助剂为还原性助剂，可有效防止金属被氧化，所有材料混合加工以形成最后混合浆料。本发明的全铝背场晶体硅太阳能电池用铝浆。
综上所述，本发明所述的一种全铝背场晶体硅太阳能电池用铝浆，针对背电极直接印刷在硅片上会降低太阳能电池的光电转换效率的问题，本发明的铝 浆可采用不含背电极图形的全背场网版印刷在晶体硅上形成全铝背场，可以实现全铝背场的背表面制备工艺的良好实施，避免了传统印刷工艺中铝浆印刷后和背电极有孔隙导致在接触处容易产生龟裂及剥落，导电性能差，背电极与背铝层附着力差等问题，同时浆料的附着力好，易于与之后印刷的银浆更好的附着；在浆料中添加的纳米金属油性溶液可以使浆料与硅片有较好的接触性，避免铝背层脱落,能形成良好的欧姆接触，同时提高了光电转换效率，为企业提高了经济效益。
具体实施方式
下面结合实施例，对本发明的内容作进一步描述。
本发明所述的一种全铝背场晶体硅太阳能电池用铝浆，所述铝浆包含：60-70％铝粉；5-10％纳米金属油性溶液；1-10％无机粘结剂；10-20％有机粘结剂；5-30％有机溶剂；1-5％助剂；且各组份的质量百分比之和为100％。
其中，所述铝粉为球形铝粉，平均粒径在0.8-10μm，纯度大于99.8％，跨度为2.0-4.0。
所述纳米金属油性溶液为包含纳米铝、锡、铝锡、铝硅中一种或几种的油性溶液，其纯度大于99％，且所述纳米金属油性溶液的平均粒径为50-100nm，其油性溶液为松油醇、丁基卡必醇中的一种或两种。
所述的无机粘结剂为核壳型玻璃粉，主要是通过低熔点玻璃粉和高熔点玻璃粉按1:1-2:1的质量百分比混合后加热熔炼、冷粹、粉碎、筛选而得，其中无机粘结剂的壳层结构为低熔点玻璃粉，核心结构为高熔点玻璃粉，其中所述的低熔点玻璃粉为铋系混合物，其熔点为350-450℃，具有优先助融的作用，所述高熔点玻璃粉为锌系混合物，其熔点为550-650℃，具有高温下深度助融的作用，所述无机粘结剂的熔点为480-530℃。
所述的无机粘结剂粒径D50为2-2.5μm，粒径跨度(D90+D10)/D50为2-3，具有分步助融的作用。
所述助剂为还原性助剂，其为活性炭、纳米碳、导电碳中的一种或几种，可以防止浆料过快氧化，同时该助剂灼烧后无残留，卫生环保。
所述有机粘结剂主要由树脂及有机溶剂按1:1-1:4的质量百分比混合，经混合分散后得到的有机粘结剂粘度为180-900dpa.s，所述树脂为松香、安息香、酚醛树脂、聚氯乙烯树脂、琥珀、虫胶、聚酯树脂、聚酰胺树脂、环氧树脂中的一种或几种。
下面以几个具体的实施例对本发明的铝浆的制备方法进行具体阐述：
实施例1
1、无机粘结剂的制备
无机粘结剂的制备：称取占总无机粘结剂含量60％低熔点玻璃粉和40％高熔点玻璃粉，用混料机混合均匀，装入瓷坩埚中，在烘箱中160℃干燥2h后，放入高温炉中500℃熔炼1.5h，冷粹后烘干、粉碎、筛取。
2、有机粘结剂的制备：按质量份称取占总有机粘结剂含量20％酚醛树脂和80％有机溶剂混合后，在分散机上分散30-60min,分散溶解，得到透明、均一的有机粘结剂。
3、制备电池全铝背场铝浆：
纳米金属油性溶液为纳米铝颗粒、纳米锡颗粒、松油醇按质量百分比1:1:1的比例混合而得的组合物，并按铝浆质量比称取60％铝粉、5％纳米金属油性溶液、10％无机粘结剂、10％有机粘结剂、10％有机溶剂和5％活性炭助剂，使用分散机混合均匀后，用三辊研磨机研磨至16-20um，得到全铝背场铝浆。
将上述制备的全铝背场晶体硅太阳能电池用铝浆，通过250目无背电极网 版丝网印刷在规格156mm×156mm的多晶硅片上形成全铝背面，进马弗炉240℃烘干。烘干以后全铝背面无脱落，然后在全铝背面印刷背电极，进马弗炉220℃烘干，然后换另一面印刷正面银浆，进红外快烧网带炉烧结，峰值温度790-810℃，制备的浆料性能检测符合要求。
实施例2
1、无机粘结剂的制备
无机粘结剂的制备：称取占总无机粘结剂含量55％低熔点玻璃粉和45％高熔点玻璃粉，用混料机混合均匀，装入瓷坩埚中，在烘箱中160℃干燥2h后，放入高温炉中500℃熔炼1.5h，冷粹后烘干、粉碎、筛取。
2、有机粘结剂的制备：按质量份称取占总有机粘结剂含量20％酚醛树脂和80％有机溶剂混合后，在分散机上分散30-60min,分散溶解，得到透明、均一的有机粘结剂。
3、制备电池全铝背场铝浆：
纳米金属油性溶液为纳米铝颗粒、纳米锡颗粒、松油醇按质量百分比1:1:1的比例混合而得的组合物，按铝浆质量比称取65％铝粉、5％纳米金属油性溶液、7％无机粘结剂、12％有机粘结剂、8％有机溶剂和3％活性炭助剂，使用分散机混合均匀后，用三辊研磨机研磨至16-20微米，得到全铝背场铝浆。
采用上述制备的样品含锡全铝背场晶体硅太阳能电池用铝浆，通过250目无背电极网版丝网印刷在规格156mm×156mm的多晶硅片上形成全铝背面，进马弗炉240℃烘干。烘干以后全铝背面无脱落，然后在全铝背面印刷背电极，进马弗炉220℃烘干，然后换另一面印刷正面银浆，进红外快烧网带炉烧结，峰值温度790-810℃。制备的浆料性能检测符合要求。
实施例3
1、无机粘结剂的制备
无机粘结剂的制备：称取占总无机粘结剂含量50％低熔点玻璃粉和50％高熔点玻璃粉，用混料机混合均匀，装入瓷坩埚中，在烘箱中160℃干燥2h后，放入高温炉中500℃熔炼1.5h，冷粹后烘干、粉碎、筛取。
2、有机粘结剂的制备：按质量份称取占总有机粘结剂含量20％松香、20％酚醛树脂和60％有机溶剂混合后，在分散机上分散30-60min,分散溶解，得到透明、均一的有机粘结剂。
3、制备电池全铝背场铝浆：
纳米金属油性溶液为纳米铝颗粒、纳米铝锡颗粒、松油醇按质量百分比1:1:1的比例混合而得的组合物，按铝浆质量份称取62％铝粉、5％纳米金属油性溶液、8％无机粘结剂、12％有机粘结剂、8％有机溶剂和5％纳米碳助剂，使用分散机混合均匀后，用三辊研磨机研磨至16-20微米，得到全铝背场铝浆。
采用上述制备的样品含锡全铝背场晶体硅太阳能电池用铝浆，通过250目无背电极网版丝网印刷在规格156mm×156mm的多晶硅片上形成全铝背面，进马弗炉240℃烘干。烘干以后全铝背面无脱落，然后在全铝背面印刷背电极，进马弗炉220℃烘干，然后换另一面印刷正面银浆，进红外快烧网带炉烧结，峰值温度790-810℃。制备的浆料性能检测符合要求。
实施例4
1、无机粘结剂的制备
无机粘结剂的制备：称取占总无机粘结剂含量65％低熔点玻璃粉，35％高熔点玻璃粉，用混料机混合均匀，装入瓷坩埚中，在烘箱中160℃干燥2h后，放入高温炉中500℃熔炼1.5h，冷粹后烘干、粉碎、筛取。
2、有机粘结剂的制备：按质量份称取占总有机粘结剂含量20％酚醛树脂和 80％有机溶剂混合后，在分散机上分散30-60min,分散溶解，得到透明、均一的有机粘结剂。
3、制备电池全铝背场铝浆：
纳米金属油性溶液为纳米铝颗粒、纳米铝硅颗粒、松油醇按质量百分比1:1:1的比例混合而得的组合物，按铝浆质量份称取60％铝粉、6％纳米金属油性溶液、7％无机粘结剂、11％有机粘结剂、12％有机溶剂和3％活性炭助剂，使用分散机混合均匀后，用三辊研磨机研磨至16-20微米，得到全铝背场铝浆。
采用上述制备的样品含锡全铝背场晶体硅太阳能电池用铝浆，通过250目无背电极网版丝网印刷在规格156mm×156mm的多晶硅片上形成全铝背面，进马弗炉240℃烘干。烘干以后全铝背面无脱落，然后在全铝背面印刷背电极，进马弗炉220℃烘干，然后换另一面印刷正面银浆，进红外快烧网带炉烧结，峰值温度790-810℃。制备的浆料性能检测符合要求。
实施例5
1、无机粘结剂的制备
无机粘结剂的制备：称取占总无机粘结剂含量60％低熔点玻璃粉，40％高熔点玻璃粉，用混料机混合均匀，装入瓷坩埚中，在烘箱中160℃干燥2h后，放入高温炉中500℃熔炼1.5h，冷粹后烘干、粉碎、筛取。
2、有机粘结剂的制备：按质量份称取占总有机粘结剂含量20％松香、20％酚醛树脂和60％有机溶剂混合后，在分散机上分散30-60min,分散溶解，得到透明、均一的有机粘结剂。
3、制备电池全铝背场铝浆：
纳米金属油性溶液为纳米铝颗粒、纳米铝锡颗粒、纳米铝硅颗粒松油醇按质量百分比1:1:1:1的比例混合而得的组合物，按铝浆质量份称取62％铝粉、5％ 纳米金属油性溶液、8％无机粘结剂、12％有机粘结剂、8％有机溶剂和5％活性炭助剂，使用分散机混合均匀后，用三辊研磨机研磨至16-20微米，得到全铝背场铝浆。
采用上述制备的样品含锡全铝背场晶体硅太阳能电池用铝浆，通过250目无背电极网版丝网印刷在规格156mm×156mm的多晶硅片上形成全铝背面，进马弗炉240℃烘干。烘干以后全铝背面无脱落，然后在全铝背面印刷背电极，进马弗炉220℃烘干，然后换另一面印刷正面银浆，进红外快烧网带炉烧结，峰值温度790-810℃。制备的浆料性能检测符合要求。
实施例6
1、无机粘结剂的制备
无机粘结剂的制备：称取占总无机粘结剂含量50％低熔点玻璃粉，50％高熔点玻璃粉，用混料机混合均匀，装入瓷坩埚中，在烘箱中160℃干燥2h后，放入高温炉中500℃熔炼1.5h，冷粹后烘干、粉碎、筛取。
2、有机粘结剂的制备：按质量份称取占总有机粘结剂含量20％酚醛树脂和80％有机溶剂混合后，在分散机上分散30-60min,分散溶解，得到透明、均一的有机粘结剂。
3、制备电池全铝背场铝浆：
纳米金属油性溶液为纳米铝颗粒、纳米铝锡颗粒、纳米铝硅颗粒、松油醇按质量百分比1:1:1:1的比例混合而得的组合物，按铝浆质量份称取70％铝粉、6％纳米金属油性溶液、6％无机粘结剂、12％有机粘结剂、8％有机溶剂和3％活性炭助剂，使用分散机混合均匀后，用三辊研磨机研磨至16-20微米，得到全铝背场铝浆。
采用上述制备的样品含锡全铝背场晶体硅太阳能电池用铝浆，通过250目 无背电极网版丝网印刷在规格156mm×156mm的多晶硅片上形成全铝背面，进马弗炉240℃烘干。烘干以后全铝背面无脱落，然后在全铝背面印刷背电极，进马弗炉220℃烘干，然后换另一面印刷正面银浆，进红外快烧网带炉烧结，峰值温度790-810℃。制备的浆料性能检测符合要求。
将上述五个实施例得到的产品进行性能测试，结果如表1所示：
表1：
Figure PCTCN2015092014-appb-000001

Claims (10)

  1. 一种全铝背场晶体硅太阳能电池用铝浆，其特征在于：所述铝浆包含：
    Figure PCTCN2015092014-appb-100001
    其各组份的质量百分比之和为100％。
  2. 根据权利要求1所述的一种全铝背场晶体硅太阳能电池用铝浆，其特征在于：所述铝粉为球形铝粉，平均粒径在0.8-10μm，纯度大于99.8％，跨度为2.0-4.0。
  3. 根据权利要求1所述的一种全铝背场晶体硅太阳能电池用铝浆，其特征在于：所述纳米金属油性溶液为包含纳米铝、锡、铝锡、铝硅中一种或几种的油性溶液，其纯度大于99％。
  4. 根据权利要求1或2所述的一种全铝背场晶体硅太阳能电池用铝浆，其特征在于：所述纳米金属油性溶液的平均粒径为50-100nm，其油性溶液为松油醇、丁基卡必醇中的一种或两种。
  5. 根据权利要求1所述的一种全铝背场晶体硅太阳能电池用铝浆，其特征在于：所述的无机粘结剂为核壳型玻璃粉，主要是通过低熔点玻璃粉和高熔点玻璃粉按1:1-2:1的质量百分比混合后加热熔炼、冷粹、粉碎、筛选而得，其中无机粘结剂的壳层结构为低熔点玻璃粉，核心结构为高熔点玻璃粉。
  6. 根据权利要求5所述的一种全铝背场晶体硅太阳能电池用铝浆，其特征在于：所述的低熔点玻璃粉为铋系混合物，其熔点为350-450℃，所述高熔点玻 璃粉为锌系混合物，其熔点为550-650℃，所述无机粘结剂的熔点为480-530℃。
  7. 根据权利要求1所述的一种全铝背场晶体硅太阳能电池用铝浆，其特征在于：所述的无机粘结剂粒径D50为2-2.5μm，粒径跨度(D90+D10)/D50为2-3，具有分步助融的作用。
  8. 根据权利要求1所述的一种全铝背场晶体硅太阳能电池用铝浆，其特征在于：所述助剂为还原性助剂，其为活性炭、纳米碳、导电碳中的一种或几种，可以防止浆料过快氧化。
  9. 根据权利要求1所述的一种全铝背场晶体硅太阳能电池用铝浆，其特征在于：所述有机粘结剂主要由树脂及有机溶剂按1:1-1:4的质量百分比混合，经混合分散后得到的有机粘结剂粘度为180-900dpa.s，所述树脂为松香、安息香、酚醛树脂、聚氯乙烯树脂、琥珀、虫胶、聚酯树脂、聚酰胺树脂、环氧树脂中的一种或几种。
  10. 一种制备权利要求1所述全铝背场晶体硅太阳能电池用铝浆的方法，其特征在于：包括以下步骤：
    (1)无机粘结剂的制备：将低熔点玻璃粉和高熔点玻璃粉按1:1-2:1的质量百分比加入混料机中混合均匀，装入瓷坩埚内，在烘箱中160℃干燥2h，然后放入高温炉中500℃熔炼1.5h，冷粹后烘干粉碎筛取得到无机粘结剂；
    (2)有机粘结剂的制备：将树脂及有机溶剂按1:1-1:4的质量百分比混合，然后倒入分散机上分散30～60min，分散溶解后得到透明均一的有机粘结剂，其中树脂采用松香、安息香、酚醛树脂、聚氯乙烯树脂、琥珀、虫胶、聚酯树脂、聚酰胺树脂、环氧树脂中的一种或几种；
    (3)铝浆配制：称取占总铝浆含量60-70％铝粉、5-10％纳米金属油性溶液、1-10％无机粘结剂、10-20％有机粘结剂、5-30％有机溶剂及1-10％助剂用分散机 进行均匀混合；
    (4)成品制备：将步骤(3)混合后的铝浆通过三辊研磨机进行研磨至16～20um得到全铝背场铝浆。
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110033876A (zh) * 2019-05-16 2019-07-19 应炎冲 一种晶体硅光伏电池用铝浆材料及制备方法

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104637568B (zh) * 2015-02-02 2017-02-01 南通天盛新能源股份有限公司 一种全铝背场晶体硅太阳能电池用铝浆及其制备方法
CN105244074B (zh) * 2015-10-30 2017-06-20 杭州杭硕新材料科技有限公司 一种晶体硅太阳能电池用铝浆
CN105825913B (zh) * 2016-05-16 2017-11-24 南通天盛新能源股份有限公司 一种耐老化的晶体硅太阳能电池用背银浆及其制备方法
CN106098149B (zh) * 2016-08-30 2018-06-26 南通天盛新能源股份有限公司 高效晶体硅太阳能电池背场浆料及其制备方法
CN109524150B (zh) * 2018-07-06 2021-04-23 南通天盛新能源股份有限公司 一种全铝背场背银浆料及其制备方法与应用
CN109004043B (zh) * 2018-07-16 2021-03-16 南通天盛新能源股份有限公司 一种太阳能电池背面电极的制备方法与应用
CN114068062A (zh) * 2020-07-30 2022-02-18 一道新能源科技(衢州)有限公司 一种铝浆及其制备方法
CN112466507A (zh) * 2020-11-11 2021-03-09 合肥圣达电子科技实业有限公司 一种氧化铝陶瓷用可电镀导电铜浆料及其制备方法和烧结工艺
CN113658742B (zh) * 2021-10-21 2022-03-08 西安宏星电子浆料科技股份有限公司 一种有机金导体浆料
CN114618859B (zh) * 2022-02-28 2023-06-06 武汉大学 一种回收再利用废旧晶硅太阳能板的方法
CN114571137A (zh) * 2022-05-09 2022-06-03 中机智能装备创新研究院(宁波)有限公司 一种铜基钎膏、铜基预合金及其制备方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101826564A (zh) * 2010-05-11 2010-09-08 中国乐凯胶片集团公司 一种太阳能电池背场铝浆
CN101931014A (zh) * 2009-06-26 2010-12-29 比亚迪股份有限公司 一种太阳能电池用导电浆料及其制备方法
KR20120002257A (ko) * 2010-06-30 2012-01-05 동우 화인켐 주식회사 태양전지 후면 전극용 알루미늄 페이스트 조성물
CN102737751A (zh) * 2011-04-08 2012-10-17 上海新天和电子材料有限公司 用于制备硅太阳能电池的背场铝导电浆料及其制造方法
CN104637568A (zh) * 2015-02-02 2015-05-20 南通天盛新能源科技有限公司 一种全铝背场晶体硅太阳能电池用铝浆及其制备方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101555388B (zh) * 2009-05-19 2012-09-05 无锡市儒兴科技开发有限公司 硅太阳能电池铝浆用无机粘合剂及其制备方法
KR101107553B1 (ko) * 2009-11-10 2012-01-31 한국에너지기술연구원 2가지 이상의 금속이 결합된 수산화물 계열 전구체의 표면 개질을 통한 유용성 입자 제조방법
TWI576861B (zh) * 2010-02-12 2017-04-01 碩禾電子材料股份有限公司 導電鋁膠及其製造方法、太陽能電池及其模組
US8551367B2 (en) 2012-01-19 2013-10-08 E I Du Pont De Nemours And Company Polymer thick film solder alloy conductor composition
KR20140022511A (ko) * 2012-08-13 2014-02-25 제일모직주식회사 태양전지 전극용 페이스트, 이로부터 제조된 전극 및 이를 포함하는 태양전지
CN102903765B (zh) 2012-10-19 2015-04-22 湖南红太阳光电科技有限公司 一种全铝背场晶体硅电池及其制备方法
CN202996849U (zh) 2012-10-19 2013-06-12 湖南红太阳光电科技有限公司 一种全铝背场晶体硅电池
CN103151097A (zh) 2013-03-05 2013-06-12 江西瑞晶太阳能科技有限公司 晶硅电池全铝背场用的背极浆料
CN103746043A (zh) 2014-01-29 2014-04-23 北京七星华创电子股份有限公司 全铝掺杂n型太阳能电池的制备方法
US9966479B2 (en) * 2014-06-12 2018-05-08 E I Du Pont De Nemours And Company Aluminum-tin paste and its use in manufacturing solderable electrical conductors
CN104318974A (zh) * 2014-11-13 2015-01-28 四川银河星源科技有限公司 一种晶体硅太阳能电池用铝导电浆料及其制备方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101931014A (zh) * 2009-06-26 2010-12-29 比亚迪股份有限公司 一种太阳能电池用导电浆料及其制备方法
CN101826564A (zh) * 2010-05-11 2010-09-08 中国乐凯胶片集团公司 一种太阳能电池背场铝浆
KR20120002257A (ko) * 2010-06-30 2012-01-05 동우 화인켐 주식회사 태양전지 후면 전극용 알루미늄 페이스트 조성물
CN102737751A (zh) * 2011-04-08 2012-10-17 上海新天和电子材料有限公司 用于制备硅太阳能电池的背场铝导电浆料及其制造方法
CN104637568A (zh) * 2015-02-02 2015-05-20 南通天盛新能源科技有限公司 一种全铝背场晶体硅太阳能电池用铝浆及其制备方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110033876A (zh) * 2019-05-16 2019-07-19 应炎冲 一种晶体硅光伏电池用铝浆材料及制备方法

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