CN102804389A - 在硅片正面上形成栅阴极的方法 - Google Patents
在硅片正面上形成栅阴极的方法 Download PDFInfo
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- CN102804389A CN102804389A CN2010800264457A CN201080026445A CN102804389A CN 102804389 A CN102804389 A CN 102804389A CN 2010800264457 A CN2010800264457 A CN 2010800264457A CN 201080026445 A CN201080026445 A CN 201080026445A CN 102804389 A CN102804389 A CN 102804389A
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 57
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- 239000010703 silicon Substances 0.000 title claims abstract description 57
- 238000000034 method Methods 0.000 title claims abstract description 48
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- 239000002184 metal Substances 0.000 claims abstract description 74
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims abstract description 51
- 229910052709 silver Inorganic materials 0.000 claims abstract description 47
- 239000004332 silver Substances 0.000 claims abstract description 47
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- 239000010949 copper Substances 0.000 claims abstract description 11
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- 235000021314 Palmitic acid Nutrition 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- WCUXLLCKKVVCTQ-UHFFFAOYSA-M Potassium chloride Chemical compound [Cl-].[K+] WCUXLLCKKVVCTQ-UHFFFAOYSA-M 0.000 description 1
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- BRPQOXSCLDDYGP-UHFFFAOYSA-N calcium oxide Chemical compound [O-2].[Ca+2] BRPQOXSCLDDYGP-UHFFFAOYSA-N 0.000 description 1
- 239000000292 calcium oxide Substances 0.000 description 1
- ODINCKMPIJJUCX-UHFFFAOYSA-N calcium oxide Inorganic materials [Ca]=O ODINCKMPIJJUCX-UHFFFAOYSA-N 0.000 description 1
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- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 1
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- OQCDKBAXFALNLD-UHFFFAOYSA-N octadecanoic acid Natural products CCCCCCCC(C)CCCCCCCCC(O)=O OQCDKBAXFALNLD-UHFFFAOYSA-N 0.000 description 1
- ZQPPMHVWECSIRJ-KTKRTIGZSA-N oleic acid Chemical compound CCCCCCCC\C=C/CCCCCCCC(O)=O ZQPPMHVWECSIRJ-KTKRTIGZSA-N 0.000 description 1
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- RLOWWWKZYUNIDI-UHFFFAOYSA-N phosphinic chloride Chemical compound ClP=O RLOWWWKZYUNIDI-UHFFFAOYSA-N 0.000 description 1
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- XHXFXVLFKHQFAL-UHFFFAOYSA-N phosphoryl trichloride Chemical compound ClP(Cl)(Cl)=O XHXFXVLFKHQFAL-UHFFFAOYSA-N 0.000 description 1
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- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
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- C—CHEMISTRY; METALLURGY
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- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C3/00—Glass compositions
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- C—CHEMISTRY; METALLURGY
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- C03C8/00—Enamels; Glazes; Fusion seal compositions being frit compositions having non-frit additions
- C03C8/02—Frit compositions, i.e. in a powdered or comminuted form
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- C03C8/12—Frit compositions, i.e. in a powdered or comminuted form containing lead containing titanium or zirconium
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- C03—GLASS; MINERAL OR SLAG WOOL
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Abstract
本发明提供了一种在硅片正面上制备栅阴极的方法,所述方法如下:在所述硅片上以正面栅极图案施加和焙烧金属浆料,以形成晶粒栅阴极,随后对所述硅片实施LIP方法,其中所述金属浆料包含有机载体和无机成分,所述无机成分包含(a)90至98重量%的至少一种导电金属粉末,所述导电金属粉末选自镍、铜和银,以及(b)0.25至8重量%的至少一种玻璃料,所述玻璃料选自包含47.5至64.3重量%的PbO、23.8至32.2重量%的SiO2、3.9至5.4重量%的Al2O3、2.8至3.8重量%的TiO2和6.9至9.3重量%的B2O3的玻璃料。
Description
发明领域
本发明涉及一种在硅片正面上形成栅阴极的方法。
发明背景
具有p-型基板的常规太阳能电池结构具有通常位于电池的正面或受光面上的负极和位于背面上的正极。众所周知,在半导体的p-n结上入射的合适波长的辐射充当在该半导体中产生电子-空穴对的外部能源。存在于p-n结处的电势差会导致空穴和电子以相反的方向跨过该结移动,从而产生能够向外部电路输送电力的电流。大部分太阳能电池为金属化的硅片形式,即,具有导电的金属触点。
目前所用的太阳能发电电池大多为硅太阳能电池。具体地讲,电极是通过使用诸如丝网印刷之类的方法由金属浆料制成的。
硅太阳能电池的生产通常起始于硅片形式的p-型硅基板,在p-型硅基板上通过磷(P)等的热扩散而形成具有反向导电性的n-型扩散层。通常将三氯氧化磷(POCl3)用作气态磷扩散源,其他液体源为磷酸等。在不作任何特别改性的情况下,扩散层在硅基板的整个表面上形成。p-n结是在p-型掺杂剂的浓度等于n-型掺杂剂的浓度处形成;常规电池的p-n结接近受光面,并且结深度介于0.05和0.5μm之间。
在形成了该扩散层之后,通过用某种酸例如氢氟酸进行蚀刻而将多余的表面玻璃从表面的其余部分除去。
接下来,通过例如等离子体CVD(化学气相沉积)等方法在n-型扩散层上形成厚度介于0.05和0.1μm之间的TiOx、SiOx、TiOx/SiOx或特别是SiNx或Si3N4的ARC层(抗反射涂层)。
具有p-型基板的常规太阳能电池结构通常具有位于电池正面上的负栅电极和位于背面上的正极。通常通过在电池正面上的ARC层上丝网印刷并干燥正面银浆(正面电极形成银浆)来施加栅极。正面栅极通常以所谓的H图案进行丝网印刷,该图案包括(i)薄的平行指状线(收集线)以及(ii)与指状线垂直相交的两条母线。此外,在基板的背面上丝网印刷(或某种其他施加方法)并相继干燥背面银或银/铝浆和铝浆。通常,首先将背面银或银/铝浆丝网印刷到硅片背面上,形成两条平行母线或形成矩形(极耳),以准备用于焊接互连线(预焊接的铜带)。然后将铝浆印刷到裸露区域,与背面银或银/铝略微重叠。在一些情况下,在印刷了铝浆之后进行银或银/铝浆的印刷。然后通常在带式炉中焙烧1-5分钟,从而使晶片达到700-900℃范围内的峰值温度。正面栅极和背面电极可依次焙烧或共同焙烧。
一般在硅片的背面上丝网印刷并干燥铝浆。将晶片在高于铝熔点的温度下焙烧以形成铝硅熔体,随后在冷却阶段中形成掺有铝的外延生长的硅层。该层一般被称为背表面场(BSF)层。铝浆通过焙烧从干燥状态转化为铝背面电极。同时,将背面银或银/铝浆焙烧成银或银/铝背面电极。在焙烧期间,背面铝与背面银或银/铝之间的边界呈现合金状态,并且还实现电连接。铝电极占背面电极的大多数区域,这部分归因于需要形成p+层。在背面的各部分上形成银或银/铝背面电极(常常形成为2-6mm宽的母线),以作为用于通过预焊接的铜带等来互连太阳能电池的电极。此外,在焙烧过程中,作为正面栅极而印刷的正面银浆会烧结并渗透过ARC层,从而能够与n-型层进行电接触。这类方法通常被称为“烧透”。
通过使用将导电银沉积到正面栅极上的所谓的LIP(光诱导电镀)方法能够提高上述类型的硅太阳能电池的电效率。在LIP方法中,正面栅极充当电镀有银的晶粒电极;参见A.Mette等人,“Increasing the Efficiencyof Screen-Printed Silicon Solar Cells by Light-Induced Silver Plating”,Photovoltaic Energy Conversion,Conference Record of the 2006 IEEE 4thWorld Conference,第1卷,2006年5月,第1056-1059页。在LIP方法中,将具有正面晶粒栅阴极的硅太阳能电池浸入LIP浴中,即浸入包含可阴极沉积形式的银的水浴中。电池的正面被照明,并且正面上所形成的负电位使得银沉积在晶粒栅阴极上。同时将电池的背面连接到外部电源,并施加偏压以补偿在硅片的正面的照明下所形成的正电位,从而防止铝层溶解。将银牺牲电极通过阳极连接到外部电源,从而为LIP浴补充由沉积过程从LIP浴中消耗的银。
现已发现,当用于施加晶粒栅阴极的导电金属浆料包含具有特定组合物的玻璃料时,可进一步提高具有正面栅阴极(通过施加和焙烧晶粒栅阴极并在其上通过LIP沉积银而制得)的硅太阳能电池的电效率。
发明概述
本发明涉及一种在硅片正面上制备栅阴极的方法,所述硅片在所述正面上具有p-型区域、n-型区域、p-n结和ARC层,所述方法包括如下步骤:
(1)提供在其正面上具有ARC层的硅片,
(2)在硅片正面的ARC层上以正面栅极图案施加并干燥金属浆料,以及
(3)焙烧金属浆料以形成晶粒栅阴极,以及
(4)通过对具有晶粒栅阴极的硅片实施LIP方法,从而将银沉积在晶粒栅阴极上,
其中金属浆料包含有机载体和无机成分,该无机成分包含(a)90至98重量%的至少一种导电金属粉末,所述导电金属粉末选自镍、铜和银,以及(b)0.25至8重量%的至少一种玻璃料,所述玻璃料选自包含47.5至64.3重量%的PbO、23.8至32.2重量%的SiO2、3.9至5.4重量%的Al2O3、2.8至3.8重量%的TiO2和6.9至9.3重量%的B2O3的玻璃料。
在说明书和权利要求书中,术语“晶粒栅阴极”和“栅阴极”是用于清楚地区分在工序(3)完成后所获得的晶粒栅阴极和在工序(4)完成后所获得的栅阴极,即通过本发明的方法制得的栅阴极。
发明详述
在本发明的方法的步骤(1)中,提供在其正面上具有ARC层的硅片。硅片是传统上用于生产硅太阳能电池的常规单晶或多晶硅片;它具有p-型区域、n-型区域和p-n结。硅片在其正面上具有例如TiOx、SiOx、TiOx/SiOx,或特别是SiNx或Si3N4的ARC层。此类硅片为技术人员所熟知;为简明起见,参见“发明背景”部分。硅片可能已具有常规的背面金属喷镀层,即具有如上文“发明背景”部分中所述的背面铝浆和背面银浆或背面银/铝浆。背面金属浆料(包括背面铝浆)的施加可在步骤(3)中的正面晶粒栅阴极形成之前或形成之后实施。优选地,在实施工序(4)之前施加和焙烧背面金属浆料(包括背面铝浆)。背面金属浆料(包括背面铝浆)可单独焙烧或共同焙烧,或甚至与步骤(2)中施加到ARC层上的正面金属浆料共同焙烧。
在本发明的方法的步骤(2)中,将金属浆料以正面栅极图案施加到硅片正面上的ARC层上。
金属浆料为具有烧透性能的厚膜导电组合物,即其烧透ARC层,从而与硅基板的表面形成电接触。
金属浆料包含有机载体和无机成分,该无机成分包含(a)90至98重量%的至少一种导电金属粉末,所述导电金属粉末选自镍、铜和银,以及(b)0.25至8重量%的至少一种玻璃料,所述玻璃料选自包含47.5至64.3重量%的PbO、23.8至32.2重量%的SiO2、3.9至5.4重量%的Al2O3、2.8至3.8重量%的TiO2和6.9至9.3重量%的B2O3的玻璃料。
金属浆料包含有机载体。可将多种多样的惰性粘稠材料用作有机载体。有机载体可以是这样一种载体,其中颗粒态成分(导电金属粉末、玻璃料、任选存在的其他颗粒态无机组分)能够以适当的稳定度分散。有机载体的特性,尤其是流变性可赋予金属浆料良好的施加特性,其包括:不溶性固体的稳定分散性、适于施加的粘度和触变性、硅片正面上ARC层的和浆料固体的适当可润湿性、良好的干燥速率以及良好的焙烧特性。用于金属浆料中的有机载体可为非水惰性液体。有机载体可为有机溶剂或有机溶剂混合物;在一个实施方案中,有机载体可为一种或多种有机聚合物在一种或多种有机溶剂中的溶液。能够使用多种有机载体中的任一种,所述载体可包含或不包含增稠剂、稳定剂和/或其他常用添加剂。在一个实施方案中,用作有机载体的成分的聚合物可为乙基纤维素。可单独使用或以组合方式使用的聚合物的其他实例包括乙基羟乙基纤维素、木松香、酚醛树脂和低级醇的聚(甲基)丙烯酸酯。合适的有机溶剂的实例包括醇酯和萜烯诸如α-或β-萜品醇或它们与其他溶剂诸如煤油、邻苯二甲酸二丁酯、二甘醇丁基醚、二甘醇丁醚乙酸酯、己二醇和高沸点醇的混合物。此外,在有机载体中还可包含挥发性有机溶剂,以用于促进金属浆料在施加后的快速硬化。可配制这些溶剂和其他溶剂的各种组合,以达到所期望的粘度和挥发性要求。
金属浆料中的有机载体与无机成分(无机组分;导电金属粉末、玻璃料和任选存在的其他无机添加剂之和)的比率取决于金属浆料的施加方法和所用的有机载体的种类,而且该比率可以改变。通常,金属浆料将包含40至95重量%的无机组分和5至60重量%的有机载体。
金属浆料的无机成分包含(a)90至98重量%的至少一种导电金属粉末,所述导电金属粉末选自镍、铜和银,和(b)0.25至8重量%的至少一种玻璃料,所述玻璃料选自包含47.5至64.3重量%的PbO、23.8至32.2重量%的SiO2、3.9至5.4重量%的Al2O3、2.8至3.8重量%的TiO2和6.9至9.3重量%的B2O3的玻璃料。
在一个实施方案中,金属浆料的无机成分包含(a)92至98重量%的至少一种导电金属粉末,所述导电金属粉末选自镍、铜和银,和(b)1.5至4重量%的至少一种玻璃料,所述玻璃料选自包含47.5至64.3重量%的PbO、23.8至32.2重量%的SiO2、3.9至5.4重量%的Al2O3、2.8至3.8重量%的TiO2和6.9至9.3重量%的B2O3的玻璃料。
如能够由组分(a)和(b)的重量百分比计算得出,金属浆料的无机成分可包含除组分(a)和(b)之外的其他无机组分。此类其他无机组分的实例包括固体无机氧化物或在焙烧金属浆料期间能够形成固体无机氧化物的化合物。所述固体无机氧化物的实例包括二氧化硅、氧化锌、氧化镁、氧化钙以及氧化锂。一般来讲,金属浆料的无机成分不包含除至少一种选自以下的玻璃料以外的其他玻璃料:包含47.5至64.3重量%的PbO、23.8至32.2重量%的SiO2、3.9至5.4重量%的Al2O3、2.8至3.8重量%的TiO2和6.9至9.3重量%的B2O3的玻璃料。
金属浆料包含至少一种选自银、铜和镍的导电金属粉末。优选的是银粉。金属粉末或银粉可以是未涂覆的或至少部分地涂覆有表面活性剂的粉末。表面活性剂可选自但不限于:硬脂酸、棕榈酸、月桂酸、油酸、癸酸、肉豆蔻酸、亚油酸以及它们的盐,例如铵盐、钠盐或钾盐。
导电金属粉末或具体地讲银粉的平均粒度在例如0.2-5μm范围内。
在说明书及权利要求书中使用术语“平均粒度”。这是指通过激光散射所测定的平均粒径(d50)。本说明书和权利要求书中关于平均粒度所作的所有陈述均涉及如存在于金属浆料中的相关材料的平均粒度。
一般来讲,金属浆料仅包含所述至少一种选自银、铜和镍的导电金属粉末。然而,可能的是,将小部分的选自银、铜和镍的导电金属替换为一种或多种其他颗粒态金属。按金属浆料中包含的颗粒态金属的总重量计,此类其他颗粒态金属的比例为例如0至10重量%。
如文中已提及,金属浆料包含至少一种玻璃料作为无机粘结剂。所述一种或多种玻璃料选自包含47.5至64.3重量%的PbO、23.8至32.2重量%的SiO2、3.9至5.4重量%的Al2O3、2.8至3.8重量%的TiO2和6.9至9.3重量%的B2O3的玻璃料。在一个实施方案中,所述一种或多种玻璃料选自包含50.3至61.5重量%的PbO、25.2至30.8重量%的SiO2、4.2至5.2重量%的Al2O3、3.0至3.6重量%的TiO2和7.3至8.9重量%的B2O3的玻璃料。在另一个实施方案中,所述一种或多种玻璃料选自包含53.1至58.7重量%的PbO、26.6至29.4重量%的SiO2、4.5至4.9重量%的Al2O3、3.1至3.5重量%的TiO2和7.7至8.5重量%的B2O3的玻璃料。如可由PbO、SiO2、Al2O3、TiO2和B2O3的重量百分比计算得出,后者的总和不一定为100重量%;然而在一个实施方案中,PbO、SiO2、Al2O3、TiO2和B2O3的重量百分比的总和为100重量%。如果PbO、SiO2、Al2O3、TiO2和B2O3的重量百分比总和不为100重量%,余下的重量百分比可以是具体地讲由一种或多种其他氧化物构成。
所述至少一种玻璃料的平均粒度在例如0.5-4μm范围内。
玻璃料的制备是熟知的,并包括例如将氧化物形式的玻璃成分熔融在一起并将此类熔融组合物注入水中以形成玻璃料。如本领域熟知,可加热至例如1300-1450℃的峰值温度并持续例如0.5-1.5小时,使得熔体变为完全液态的及均相的。
可在球磨机中用水或惰性的低粘度低沸点有机液体来研磨玻璃,以减小玻璃料的粒度并且获得大小基本上均匀的玻璃料。然后可将其沉降在水或所述有机液体中以分离出细料,并且可除去包含细料的上清液。也可使用其他分类方法。
金属浆料为粘稠组合物,其可通过将导电金属粉末和玻璃料以及其他任选存在的固体无机组分与有机载体进行机械混合而制得。在一个实施方案中,可使用粉末混合生产方法,这是一种相当于传统辊磨的分散技术;还可使用辊磨或其他混合技术。
金属浆料可原样使用,或者可例如通过加入一种或多种附加的有机溶剂进行稀释;相应地,可降低金属浆料的所有其他成分的重量百分比。
在本发明的方法的步骤(2)中,将金属浆料以正面栅极图案施加到硅片正面上的ARC层上。金属浆料施加方法的实例包括笔写方法和印刷方法,例如喷射印刷、孔版印刷和丝网印刷。正面栅极可包括(i)薄的平行指状线和(ii)与指状线垂直相交的两条或更多条平行母线。在一个实施方案中,网格图案为具有两条平行母线的H图案。平行指状线可具有例如2-5mm的间隔距离、例如3-30μm的干燥层厚度以及例如40-200μm的宽度。母线可具有例如10-50μm的干燥层厚度和例如1-3mm的宽度。
施加金属浆料后使其干燥例如1-100分钟,从而使硅片达到100-300℃范围内的峰值温度。可利用例如带式、旋转式或静止式干燥机,具体地讲IR(红外线)带式干燥机来进行干燥。
在本发明方法的步骤(3)中,对干燥的金属浆料进行焙烧以形成晶粒栅阴极。步骤(3)的焙烧可进行例如1-5分钟,从而使硅片达到700-900℃范围内的峰值温度。可利用例如单区段或多区段带式炉尤其是多区段IR带式炉来进行焙烧。可在惰性气氛中或在氧气的存在下例如在空气的存在下进行焙烧。在焙烧期间,可除去(即烧尽和/或碳化,具体地讲烧尽)包括非挥发性有机材料的有机物质和在干燥期间没有蒸发的有机部分。在焙烧期间所除去的有机物质包括一种或多种有机溶剂、任选存在的一种或多种有机聚合物、任选存在的一种或多种有机添加剂以及任选存在的金属有机化合物的有机部分。焙烧期间还进行另一工序,即,烧结玻璃料和导电金属粉末。金属浆料蚀刻并烧透ARC层,从而与硅基板形成电接触。
如文中已提及的,焙烧可按所谓的共同焙烧的方式与施加到硅片上的背面金属浆料一起进行。
在本发明的方法的步骤(3)中如此形成的晶粒栅阴极为导电的,其允许顺利进行后续工序(4);即,在工序(4)中可用银电镀晶粒栅阴极,以形成正面栅阴极。
在本发明的方法的步骤(4)中,对具有晶粒栅阴极的硅片实施LIP方法,从而将银沉积在晶粒栅阴极上。为此,将硅片浸入LIP浴中,并对其上具有晶粒栅阴极的所浸没的硅片正面进行照明。有关将硅片背面连接到外部电源和采取措施以保持LIP浴的银含量恒定的相关内容,参见“发明背景”部分。LIP浴为包含可阴极沉积形式的银的水浴。通常,LIP浴具有例如8-11、具体地讲9-10.5范围内的碱性pH值(通过使用常规pH计来测定)。例如,卤素灯或荧光灯可用于照明目的。进行照明,直到期望量的银从LIP浴沉积到晶粒栅阴极上,即直到形成栅阴极。在本发明的方法的步骤(4)中,银的沉积导致步骤(3)中获得的网格增长;例如,在网格包括平行指状线和与指状线垂直相交的两条或更多条平行母线的情况下,指状物的层厚度可增加例如5-30μm,其宽度可增加例如10-100μm,而母线的层厚度可增加例如5-30μm。考虑到母线的起始宽度为例如1-3mm,其宽度的增加几乎不值一提。
当LIP方法完成后,从LIP浴中移除具有正面栅阴极的硅片,用水冲洗以除去LIP浴残留物并进行干燥。
前述具有通过本发明的方法制得的正面栅阴极的硅太阳能电池的电效率的进一步改善并不仅仅是实施LIP工序(4)的结果。不受理论的约束,并且虽然未开展足够详细的研究,但据信金属浆料中包含的用于施加正面晶粒栅阴极的玻璃料组合物是关键。据信,所述玻璃料组合物使得LIP工序(4)过程中银的沉积和玻璃的溶解之间达到良好均衡的比率,从而形成具有与硅基板同等致密结构的栅阴极,所述致密结构具有良好电导率和低接触电阻。
Claims (13)
1.在硅片正面上制备栅阴极的方法,所述硅片在所述正面上具有p-型区域、n-型区域、p-n结和ARC层,所述方法包括如下步骤:
(1)提供在其正面上具有ARC层的硅片,
(2)在所述硅片的所述正面上的所述ARC层上以正面栅极图案施加金属浆料并干燥金属浆料,以及
(3)焙烧所述金属浆料以形成晶粒栅阴极,以及
(4)通过对具有所述晶粒栅阴极的所述硅片实施LIP方法,从而将银沉积在所述晶粒栅阴极上,
其中,所述金属浆料包含有机载体和无机成分,所述无机成分包含(a)90至98重量%的至少一种导电金属粉末,所述导电金属粉末选自镍、铜和银,以及(b)0.25至8重量%的至少一种玻璃料,所述玻璃料选自包含47.5至64.3重量%的PbO、23.8至32.2重量%的SiO2、3.9至5.4重量%的Al2O3、2.8至3.8重量%的TiO2和6.9至9.3重量%的B2O3的玻璃料。
2.权利要求1的方法,其中,所述至少一种玻璃料选自包含50.3至61.5重量%的PbO、25.2至30.8重量%的SiO2、4.2至5.2重量%的Al2O3、3.0至3.6重量%的TiO2和7.3至8.9重量%的B2O3的玻璃料。
3.权利要求1的方法,其中,所述至少一种玻璃料选自包含53.1至58.7重量%的PbO、26.6至29.4重量%的SiO2、4.5至4.9重量%的Al2O3、3.1至3.5重量%的TiO2和7.7至8.5重量%的B2O3的玻璃料。
4.前述任一项权利要求的方法,其中,PbO、SiO2、Al2O3、TiO2和B2O3的重量百分比的总和为100重量%。
5.前述任一项权利要求的方法,其中,所述无机成分包含(a)92至98重量%的所述至少一种导电金属粉末和(b)1.5至4重量%的所述至少一种玻璃料。
6.前述任一项权利要求的方法,其中,所述至少一种导电金属粉末为银粉。
7.前述任一项权利要求的方法,其中,所述金属浆料包含40至95重量%的无机组分和5至60重量%的有机载体。
8.前述任一项权利要求的方法,其中,所述金属浆料通过选自下列的方法进行施加:笔写、喷射印刷、孔版印刷和丝网印刷。
9.前述任一项权利要求的方法,其中,所述正面栅极图案包括(i)薄的平行指状线和(ii)与所述指状线垂直相交的两条或更多条平行母线。
10.前述任一项权利要求的方法,其中,所述LIP方法包括将所述硅片浸入LIP浴中,并对在其上具有所述晶粒栅阴极的所述浸没的硅片的所述正面进行照明。
11.前述任一项权利要求的方法,其中,所述LIP浴为水浴,所述水浴具有8至11的pH值并包含能够阴极沉积形式的银。
12.根据前述任一项权利要求的方法制备的正面栅阴极。
13.硅太阳能电池,所述硅太阳能电池包括在其正面上具有ARC层的硅片和权利要求12的正面栅阴极。
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