WO2009157727A2 - Conductive paste composition and method of preparing electrode using the same - Google Patents
Conductive paste composition and method of preparing electrode using the same Download PDFInfo
- Publication number
- WO2009157727A2 WO2009157727A2 PCT/KR2009/003444 KR2009003444W WO2009157727A2 WO 2009157727 A2 WO2009157727 A2 WO 2009157727A2 KR 2009003444 W KR2009003444 W KR 2009003444W WO 2009157727 A2 WO2009157727 A2 WO 2009157727A2
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- conductive paste
- paste composition
- electrode
- composition
- binder resin
- Prior art date
Links
- 239000000203 mixture Substances 0.000 title claims abstract description 78
- 238000000034 method Methods 0.000 title claims abstract description 21
- 239000011230 binding agent Substances 0.000 claims abstract description 31
- 239000011347 resin Substances 0.000 claims abstract description 31
- 229920005989 resin Polymers 0.000 claims abstract description 31
- 239000003795 chemical substances by application Substances 0.000 claims abstract description 22
- 239000011521 glass Substances 0.000 claims abstract description 22
- 239000007769 metal material Substances 0.000 claims abstract description 10
- 239000003085 diluting agent Substances 0.000 claims abstract description 8
- 239000002245 particle Substances 0.000 claims description 25
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 21
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 16
- MQIUGAXCHLFZKX-UHFFFAOYSA-N Di-n-octyl phthalate Natural products CCCCCCCCOC(=O)C1=CC=CC=C1C(=O)OCCCCCCCC MQIUGAXCHLFZKX-UHFFFAOYSA-N 0.000 claims description 15
- BJQHLKABXJIVAM-UHFFFAOYSA-N bis(2-ethylhexyl) phthalate Chemical compound CCCCC(CC)COC(=O)C1=CC=CC=C1C(=O)OCC(CC)CCCC BJQHLKABXJIVAM-UHFFFAOYSA-N 0.000 claims description 15
- DAFHKNAQFPVRKR-UHFFFAOYSA-N (3-hydroxy-2,2,4-trimethylpentyl) 2-methylpropanoate Chemical compound CC(C)C(O)C(C)(C)COC(=O)C(C)C DAFHKNAQFPVRKR-UHFFFAOYSA-N 0.000 claims description 14
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 claims description 12
- 239000002270 dispersing agent Substances 0.000 claims description 12
- 238000007639 printing Methods 0.000 claims description 9
- 239000000758 substrate Substances 0.000 claims description 9
- 238000001035 drying Methods 0.000 claims description 8
- MTHSVFCYNBDYFN-UHFFFAOYSA-N diethylene glycol Chemical compound OCCOCCO MTHSVFCYNBDYFN-UHFFFAOYSA-N 0.000 claims description 6
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 claims description 6
- 150000001875 compounds Chemical class 0.000 claims description 5
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 4
- DOIRQSBPFJWKBE-UHFFFAOYSA-N dibutyl phthalate Chemical compound CCCCOC(=O)C1=CC=CC=C1C(=O)OCCCC DOIRQSBPFJWKBE-UHFFFAOYSA-N 0.000 claims description 4
- 239000002003 electrode paste Substances 0.000 claims description 4
- 239000000377 silicon dioxide Substances 0.000 claims description 4
- 239000000654 additive Substances 0.000 claims description 3
- 230000000996 additive effect Effects 0.000 claims description 3
- 229920002678 cellulose Polymers 0.000 claims description 3
- 239000001913 cellulose Substances 0.000 claims description 3
- WUOACPNHFRMFPN-SECBINFHSA-N (S)-(-)-alpha-terpineol Chemical compound CC1=CC[C@@H](C(C)(C)O)CC1 WUOACPNHFRMFPN-SECBINFHSA-N 0.000 claims description 2
- RYHBNJHYFVUHQT-UHFFFAOYSA-N 1,4-Dioxane Chemical compound C1COCCO1 RYHBNJHYFVUHQT-UHFFFAOYSA-N 0.000 claims description 2
- VXQBJTKSVGFQOL-UHFFFAOYSA-N 2-(2-butoxyethoxy)ethyl acetate Chemical compound CCCCOCCOCCOC(C)=O VXQBJTKSVGFQOL-UHFFFAOYSA-N 0.000 claims description 2
- POAOYUHQDCAZBD-UHFFFAOYSA-N 2-butoxyethanol Chemical compound CCCCOCCO POAOYUHQDCAZBD-UHFFFAOYSA-N 0.000 claims description 2
- NQBXSWAWVZHKBZ-UHFFFAOYSA-N 2-butoxyethyl acetate Chemical compound CCCCOCCOC(C)=O NQBXSWAWVZHKBZ-UHFFFAOYSA-N 0.000 claims description 2
- 229920000178 Acrylic resin Polymers 0.000 claims description 2
- 239000004925 Acrylic resin Substances 0.000 claims description 2
- XDTMQSROBMDMFD-UHFFFAOYSA-N Cyclohexane Chemical compound C1CCCCC1 XDTMQSROBMDMFD-UHFFFAOYSA-N 0.000 claims description 2
- OVKDFILSBMEKLT-UHFFFAOYSA-N alpha-Terpineol Natural products CC(=C)C1(O)CCC(C)=CC1 OVKDFILSBMEKLT-UHFFFAOYSA-N 0.000 claims description 2
- 229940088601 alpha-terpineol Drugs 0.000 claims description 2
- 239000002518 antifoaming agent Substances 0.000 claims description 2
- 239000000440 bentonite Substances 0.000 claims description 2
- 229910000278 bentonite Inorganic materials 0.000 claims description 2
- SVPXDRXYRYOSEX-UHFFFAOYSA-N bentoquatam Chemical group O.O=[Si]=O.O=[Al]O[Al]=O SVPXDRXYRYOSEX-UHFFFAOYSA-N 0.000 claims description 2
- 229940028356 diethylene glycol monobutyl ether Drugs 0.000 claims description 2
- 239000003112 inhibitor Substances 0.000 claims description 2
- 238000007645 offset printing Methods 0.000 claims description 2
- JCGNDDUYTRNOFT-UHFFFAOYSA-N oxolane-2,4-dione Chemical compound O=C1COC(=O)C1 JCGNDDUYTRNOFT-UHFFFAOYSA-N 0.000 claims description 2
- WVDDGKGOMKODPV-ZQBYOMGUSA-N phenyl(114C)methanol Chemical compound O[14CH2]C1=CC=CC=C1 WVDDGKGOMKODPV-ZQBYOMGUSA-N 0.000 claims description 2
- 239000003504 photosensitizing agent Substances 0.000 claims description 2
- 238000006116 polymerization reaction Methods 0.000 claims description 2
- 238000010022 rotary screen printing Methods 0.000 claims description 2
- 238000007650 screen-printing Methods 0.000 claims description 2
- 239000002904 solvent Substances 0.000 claims description 2
- 238000006243 chemical reaction Methods 0.000 abstract description 8
- 239000000463 material Substances 0.000 description 12
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 8
- 229910002016 Aerosil® 200 Inorganic materials 0.000 description 7
- 239000004065 semiconductor Substances 0.000 description 7
- ZZSNKZQZMQGXPY-UHFFFAOYSA-N Ethyl cellulose Chemical compound CCOCC1OC(OC)C(OCC)C(OCC)C1OC1C(O)C(O)C(OC)C(CO)O1 ZZSNKZQZMQGXPY-UHFFFAOYSA-N 0.000 description 6
- 230000003667 anti-reflective effect Effects 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 5
- 239000001856 Ethyl cellulose Substances 0.000 description 4
- 229920001249 ethyl cellulose Polymers 0.000 description 4
- 235000019325 ethyl cellulose Nutrition 0.000 description 4
- 239000013078 crystal Substances 0.000 description 3
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- -1 acrylic compound Chemical class 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- WMWLMWRWZQELOS-UHFFFAOYSA-N bismuth(iii) oxide Chemical compound O=[Bi]O[Bi]=O WMWLMWRWZQELOS-UHFFFAOYSA-N 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- LNAZSHAWQACDHT-XIYTZBAFSA-N (2r,3r,4s,5r,6s)-4,5-dimethoxy-2-(methoxymethyl)-3-[(2s,3r,4s,5r,6r)-3,4,5-trimethoxy-6-(methoxymethyl)oxan-2-yl]oxy-6-[(2r,3r,4s,5r,6r)-4,5,6-trimethoxy-2-(methoxymethyl)oxan-3-yl]oxyoxane Chemical compound CO[C@@H]1[C@@H](OC)[C@H](OC)[C@@H](COC)O[C@H]1O[C@H]1[C@H](OC)[C@@H](OC)[C@H](O[C@H]2[C@@H]([C@@H](OC)[C@H](OC)O[C@@H]2COC)OC)O[C@@H]1COC LNAZSHAWQACDHT-XIYTZBAFSA-N 0.000 description 1
- 229910002012 Aerosil® Inorganic materials 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229920000663 Hydroxyethyl cellulose Polymers 0.000 description 1
- 239000004354 Hydroxyethyl cellulose Substances 0.000 description 1
- 229920001479 Hydroxyethyl methyl cellulose Polymers 0.000 description 1
- 229920002153 Hydroxypropyl cellulose Polymers 0.000 description 1
- FUJCRWPEOMXPAD-UHFFFAOYSA-N Li2O Inorganic materials [Li+].[Li+].[O-2] FUJCRWPEOMXPAD-UHFFFAOYSA-N 0.000 description 1
- KKCBUQHMOMHUOY-UHFFFAOYSA-N Na2O Inorganic materials [O-2].[Na+].[Na+] KKCBUQHMOMHUOY-UHFFFAOYSA-N 0.000 description 1
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 1
- 241000935974 Paralichthys dentatus Species 0.000 description 1
- 239000004372 Polyvinyl alcohol Substances 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229920002301 cellulose acetate Polymers 0.000 description 1
- 229920006217 cellulose acetate butyrate Polymers 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- XUCJHNOBJLKZNU-UHFFFAOYSA-M dilithium;hydroxide Chemical compound [Li+].[Li+].[OH-] XUCJHNOBJLKZNU-UHFFFAOYSA-M 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 235000019447 hydroxyethyl cellulose Nutrition 0.000 description 1
- 239000001863 hydroxypropyl cellulose Substances 0.000 description 1
- 235000010977 hydroxypropyl cellulose Nutrition 0.000 description 1
- 239000001866 hydroxypropyl methyl cellulose Substances 0.000 description 1
- 229920003088 hydroxypropyl methyl cellulose Polymers 0.000 description 1
- 235000010979 hydroxypropyl methyl cellulose Nutrition 0.000 description 1
- UFVKGYZPFZQRLF-UHFFFAOYSA-N hydroxypropyl methyl cellulose Chemical compound OC1C(O)C(OC)OC(CO)C1OC1C(O)C(O)C(OC2C(C(O)C(OC3C(C(O)C(O)C(CO)O3)O)C(CO)O2)O)C(CO)O1 UFVKGYZPFZQRLF-UHFFFAOYSA-N 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229920000609 methyl cellulose Polymers 0.000 description 1
- 239000001923 methylcellulose Substances 0.000 description 1
- 235000010981 methylcellulose Nutrition 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 229920001483 poly(ethyl methacrylate) polymer Polymers 0.000 description 1
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 1
- 229920002037 poly(vinyl butyral) polymer Polymers 0.000 description 1
- 229920002401 polyacrylamide Polymers 0.000 description 1
- 229920000193 polymethacrylate Polymers 0.000 description 1
- 239000004926 polymethyl methacrylate Substances 0.000 description 1
- 229920002689 polyvinyl acetate Polymers 0.000 description 1
- 239000011118 polyvinyl acetate Substances 0.000 description 1
- 229920002451 polyvinyl alcohol Polymers 0.000 description 1
- 235000019422 polyvinyl alcohol Nutrition 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/20—Conductive material dispersed in non-conductive organic material
- H01B1/22—Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/14—Conductive material dispersed in non-conductive inorganic material
- H01B1/16—Conductive material dispersed in non-conductive inorganic material the conductive material comprising metals or alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1884—Manufacture of transparent electrodes, e.g. TCO, ITO
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Definitions
- the present invention relates to a conductive paste composition useful in preparing an electrode of a solar cell.
- a solar cell has a p-type semiconductor-n-type semiconductor junction, and its basic structure is the same as that of a diode.
- the incident light absorbed by the solar cell creates negatively charged electrons and positively charged holes created by the removal electrons which function to generate electric power.
- a semiconductor may be an n-type semiconductor attracting negatively charged electrons or a p-type semiconductor attracting positively charged holes.
- the negative charges generated in the semiconductor are attracted toward the n- type semiconductor, and the positive charges, toward the p-type semiconductor. These charges are collected at the respective electrodes, and when a wire is connected to the electrodes, an electrical circuit is formed and an electric current is generated.
- a crystalline silicon solar cell is generally classified into a single crystal silicon solar cell and a polycrystalline silicon solar cell, and typically contains a p-n homojunction.
- a single crystal has a high purity and a low crystal defect density, and is capable of achieving a high cell conversion efficiency, although it is expensive. Meanwhile, a relatively inexpensive polycrystalline material is used when the conversion efficiency is high enough for commercialization and provides a low cost solar cell.
- a single crystal silicon solar cell is known to exhibit a conversion efficiency of about 24% in the absence of a collector and a conversion efficiency of 28% or more hi the presence of a collector, while a polycrystalline silicon solar cell shows a conversion efficiency of about 18%.
- the theoretically achievable efficiencies of the single crystal and the polycrystalline material are about 35% and 19%, respectively.
- the electrode paste composition used in the fabrication of the electrode of a conventional solar cell is problematic because the aspect ratio may greatly change during the course of heat-drying the printed electrode paste at 150 to 250 °C for 1 to 2 min and heat-treating at 750 ° C for tens of sec, which reduces the light-receiving region, leading to deteriorated cell conversion efficiency.
- a conductive paste composition which is capable of preventing the deformation of the printed film during drying and heat-treating. It is another object of the present invention to provide a method for preparing an electrode using the conductive paste composition.
- a conductive paste composition comprising a binder resin, a diluent, a conductive metal material, glass frit, and an inorganic thixotrophic agent.
- a method for preparing an electrode using the conductive paste composition which comprises the steps of: printing the conductive paste composition on a substrate; drying the printed conductive paste thus obtained; and heat-treating the dried conductive paste.
- a solar cell comprising the electrode prepared in the above method as a surface electrode.
- FIG. 1 shows a schematic view of a solar cell.
- the conductive paste composition according to the present invention comprises a binder resin, a diluent, a conductive metal material, glass frit, and an inorganic thixotrophic agent.
- the composition comprises 1 to 10 wt% of the binder resin, 5 to 25 wt% of the diluent, 60 to 90 wt% of the conductive metal material, 1 to 10 wt% of the glass frit, and 0.1 to 5 wt% of the inorganic thixotrophic agent.
- the composition of the present invention may further comprise 0.1 to 5 parts by weight of a dispersant based on the total weight of the composition.
- the binder resin is a cellulose-based compound having a viscosity of 5 to 500 cps (5 wt% solvent in an 8:2 mixture of toluene and ethanol), or an acrylic resin-based compound having a molecular weight of 5,000 to 50,000.
- the binder resin may be selected from the group consisting of a cellulose-based compound such as cellulose acetate, cellulose acetate butyrate, ethyl cellulose, methyl cellulose, hydroxypropyl cellulose, hydroxyethyl cellulose, hydroxypropylmethyl cellulose and hydroxyethylmethyl cellulose, an acrylic compound such as polyacrylamide, polymethacrylate, polymethylmethacrylate and polyethylmethacrylate, a vinylic compound such as polyvinylbutyral, polyvinylacetate and polyvinylalcohol, and a mixture thereof.
- a cellulose-based compound such as cellulose acetate, cellulose acetate butyrate, ethyl cellulose, methyl cellulose, hydroxypropyl cellulose, hydroxyethyl cellulose, hydroxypropylmethyl cellulose and hydroxyethylmethyl cellulose
- an acrylic compound such as polyacrylamide, polymethacrylate, polymethylmethacrylate and polyeth
- the diluent used in the composition according to the present invention may be selected from the group consisting of ⁇ -terpineol, texanol, dioctyl phthalate, dibutyl phthalate, cyclohexane, hexane, toluene, benzylalcohol, dioxane, diethyleneglycol, ethyleneglycol monobutyl ether, ethyleneglycol monobutyl ether acetate, diethyleneglycol monobutyl ether, diethyleneglycol monobutyl ether acetate, and a mixture thereof.
- the inorganic thixotrophic agent used in the composition is bentonite or silica and is preferably Aerosil (available from DEGUSSA, Germany).
- composition according to the present invention containing 0.1 to 5 wt% of the inorganic thixotrophic agent changes in aspect ratio are small before and after a heat-treating process, thereby preventing the deformation of the io printed film upon preparing of an electrode.
- the conductive metal material used in the present invention may include a silver powder, a copper powder, a nickel powder, or an aluminum powder.
- the silver powder is prefered. Below, the conductive metal material exemplified by silver powder is described for convenience.
- the shape of the silver powder may include at least one selected from the group consisting of a spherical shape, an acicular shape, a planar shape, and an amorphous shape.
- the average particle size of the silver powder may be 0.5 to 5 ⁇ m in consideration of ease of pasting and of density thereof upon heat-treating.
- the silver powder may be contained in an amount of 60 to 90 wt% in
- the conductive paste composition in consideration of the thickness and line resistance of the electrode formed upon printing.
- the glass frit used in the present invention may have an average particle size of 0.5 to 5 ⁇ m, and the component thereof may include at least one selected from the group consisting of 43 to 91 wt% of PbO, 21 wt% or less of SiO 2 , 25
- the glass frit may have a glass softening temperature of 320 to 520 0 C and a coefficient of thermal expansion of 62 to 110 x 10 "7 /°C .
- the amount of glass frit may be set to 1 to 10 wt% based on the total weight of the conductive paste
- the amount of glass frit is smaller than 1 wt%, incomplete heat- treating occurs, undesirably increasing electric resistivity. In contrast, if the amount thereof is greater than 10 wt%, the glass component is excessively increased in the heat-treated silver powder body, undesirably increasing electric resistivity.
- composition according to the present invention may further include an additive typically known in the art, as necessary.
- the additive may include at least one selected from the group consisting of a photosensitizer, a polymerization inhibitor, a defoaming agent, a leveling agent and an organic thixotrophic agent.
- the conductive paste composition according to the present invention may be employed for preparing a surface electrode of a solar cell.
- a method of preparing an electrode using the inventive conductive paste composition comprises the steps of: printing the conductive paste composition on a substrate; drying the printed conductive paste thus obtained; and heat-treating the dried conductive paste.
- the electrode according to the present invention may have a thickness of 10 to 40 ⁇ in.
- the electrode paste printed (or patterned) using the inventive conductive paste composition may be dried at a temperature of 150 to 250 ° C for ones of min, and then heat-treated at a temperature of 700 to 900 ° C for ones of sec.
- the conductive paste composition according to the present invention may be printed on the substrate using any printing process selected from the group consisting of screen printing, gravure offset printing, rotary screen printing, and lift off printing.
- the electrode prepared using the inventive conductive paste composition can be usefully employed as the surface electrode of the solar cell.
- FIG. 1 schematically shows the solar cell.
- the silicon substrate may include polycrystalline silicon or single crystal silicon.
- a p-n junction is formed in the vicinity of a light-receiving surface.
- the substrate In the formation of the p-n junction, the substrate may be a p-type and the light-receiving surface side may be an n-type due to diffusion, or conversely the substrate may be an n-type and the light- receiving surface side may be a p-type.
- an anti-reflective layer is formed on the light-receiving surface through chemical vapor deposition (CVD).
- the anti-reflective layer may be formed of titanium oxide, silicon dioxide, or silicon nitride. Particularly useful is silicon nitride because of its high device stability.
- the anti-reflective layer may be used as a passivation layer.
- the thickness of the anti-reflective layer may be about 50 to 100 nm.
- a back electrode formed on the backside of the silicon substrate is prepared by applying a conductive metal material such as aluminum and then drying it.
- the conductive paste according to the present invention may be utilized to form the surface electrode on the surface of the anti-reflective layer.
- the pattern of the surface electrode is formed and then dried, after which the surface electrode and the back electrode are simultaneously heat-treated.
- Examples of the shape of the pattern of the surface electrode may include parallel lines and lattices.
- the solar cell fabricated using the composition according to the present invention may have an additional element for improving cell performance.
- a welding layer may be formed on the surface of the surface electrode.
- the surface electrode formed using the conductive paste according to the present invention has an aspect ratio (height/width) of 0.3 or more. Hence, when such a surface electrode is included in the solar cell, the solar cell can increase its light-receiving area to 93% or above.
- the conductive paste according to the present invention is heat-treated, line resistance is reduced, so that electromotive force generated by light incidence can be efficiently used as current.
- ethylcellulose Ethocel Std 100, available from DOW CHEMICAL 5 USA
- Texanol available from EASTMAN
- DOP dioctyl phthalate
- the viscosity was measured at a shear rate of 10 s "1 using a viscometer (RVl, available from HAKKE) and a Ti 35 spindle. Furthermore, the viscosity was measured at a shear rate of each of 1 s “1 and 10 s "1 , and then, a viscosity ratio represented by viscosity measured at 1 s ' Vviscosity measured at 10 s "1 , called the thixo index, was determined.
- Printability for a width of 100 ⁇ m was confirmed using a 325 mesh screen. Printing was performed at a squeegee rate of 40 cm/min using a screen printer, thereafter drying at 150 0 C was performed. Subsequently, heat-treating was performed in a heat-treating furnace (available from SIEREATHERM) at a maximum of 750 0 C , the printed shape was observed, and an aspect ratio (AJR) was determined. Upon heat-treating, the extent of the deformation of the film could be seen by comparing changes in aspect ratio before and after the heat- treating process.
- the conductive paste of Examples 1 to 7 had small changes in aspect ratio before and after the heat-treating process, thus reducing the deformation of the printed film.
- the composition of the comparative examples had large changes in aspect ratio, thus increasing the deformation of the printed film.
- both the aspect ratio (0.313) before the heat-treating process and the aspect ratio (0.284) after the heat-treating process were improved.
- the aspect ratio was improved in this way, the light-receiving area was increased and line resistance was reduced.
- the present invention provides a conductive paste composition and a method of preparing an electrode using the same.
- the conductive paste composition for preparing an electrode can prevent the deformation of the printed film upon heat-drying and heat-treating after printing thereof. Therefore, when a surface electrode formed using the inventive conductive paste composition according to the present invention is included in a solar cell, the solar cell can have an enlarged light- receiving area and high photoelectric conversion efficiency.
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Abstract
The present invention relates to a conductive paste composition comprising a binder resin, a diluent, a conductive metal material, glass frit, and an inorganic thixotrophic agent, which is useful for preparing an electrode of a solar cell and it prevents the the deformation of an electrode after a heat-treating process, thereby increasing a light-receiving region and photoelectric conversion efficiency.
Description
CONDUCTIVE PASTE COMPOSITION AND METHOD OF PREPARING
ELECTRODE USINGTHE SAME
FIELD OF THE INVENTION
The present invention relates to a conductive paste composition useful in preparing an electrode of a solar cell.
BACKGROUND OF THE INVENTION
A solar cell has a p-type semiconductor-n-type semiconductor junction, and its basic structure is the same as that of a diode.
When light enters the solar cell, the incident light absorbed by the solar cell creates negatively charged electrons and positively charged holes created by the removal electrons which function to generate electric power.
A semiconductor may be an n-type semiconductor attracting negatively charged electrons or a p-type semiconductor attracting positively charged holes. The negative charges generated in the semiconductor are attracted toward the n- type semiconductor, and the positive charges, toward the p-type semiconductor. These charges are collected at the respective electrodes, and when a wire is connected to the electrodes, an electrical circuit is formed and an electric current is generated.
A crystalline silicon solar cell is generally classified into a single crystal silicon solar cell and a polycrystalline silicon solar cell, and typically contains a p-n homojunction. A single crystal has a high purity and a low crystal defect density, and is capable of achieving a high cell conversion efficiency, although it is expensive. Meanwhile, a relatively inexpensive polycrystalline material is used when the conversion efficiency is high enough for commercialization and provides a low cost solar cell. A single crystal silicon solar cell is known to exhibit a conversion efficiency of about 24% in the absence of a collector and a conversion efficiency of 28% or more hi the presence of a collector, while a
polycrystalline silicon solar cell shows a conversion efficiency of about 18%. Accidentally, the theoretically achievable efficiencies of the single crystal and the polycrystalline material are about 35% and 19%, respectively.
However, the electrode paste composition used in the fabrication of the electrode of a conventional solar cell is problematic because the aspect ratio may greatly change during the course of heat-drying the printed electrode paste at 150 to 250 °C for 1 to 2 min and heat-treating at 750 °C for tens of sec, which reduces the light-receiving region, leading to deteriorated cell conversion efficiency.
SUMMARY OF THE INVENTION
Accordingly, it is an object of the present invention to provide a conductive paste composition, which is capable of preventing the deformation of the printed film during drying and heat-treating. It is another object of the present invention to provide a method for preparing an electrode using the conductive paste composition.
It is a further object of the present invention to provide a solar cell comprising the electrode prepared by the method.
In accordance with an aspect of the present invention, there is provided a conductive paste composition comprising a binder resin, a diluent, a conductive metal material, glass frit, and an inorganic thixotrophic agent.
In accordance with another aspect of the present invention, there is provided a method for preparing an electrode using the conductive paste composition, which comprises the steps of: printing the conductive paste composition on a substrate; drying the printed conductive paste thus obtained; and heat-treating the dried conductive paste.
In accordance with a further aspect of the present invention, there is provided a solar cell comprising the electrode prepared in the above method as a surface electrode.
BRIEF DESCRIPTION OF THE DRAWING
The above and other objects and features of the present invention will become apparent from the following description of the invention, when taken in conjunction with the accompanying FIG. 1 which shows a schematic view of a solar cell.
DETAILED DESCRIPTION OFTHE INVENTION
Hereinafter, a detailed description of the present invention will be given.
The conductive paste composition according to the present invention comprises a binder resin, a diluent, a conductive metal material, glass frit, and an inorganic thixotrophic agent.
According to an embodiment of the present invention, the composition comprises 1 to 10 wt% of the binder resin, 5 to 25 wt% of the diluent, 60 to 90 wt% of the conductive metal material, 1 to 10 wt% of the glass frit, and 0.1 to 5 wt% of the inorganic thixotrophic agent. The composition of the present invention may further comprise 0.1 to 5 parts by weight of a dispersant based on the total weight of the composition. In the conductive paste composition according to the present invention, the binder resin is a cellulose-based compound having a viscosity of 5 to 500 cps (5 wt% solvent in an 8:2 mixture of toluene and ethanol), or an acrylic resin-based compound having a molecular weight of 5,000 to 50,000.
Specifically, the binder resin may be selected from the group consisting of a cellulose-based compound such as cellulose acetate, cellulose acetate butyrate, ethyl cellulose, methyl cellulose, hydroxypropyl cellulose, hydroxyethyl cellulose, hydroxypropylmethyl cellulose and hydroxyethylmethyl cellulose, an acrylic compound such as polyacrylamide, polymethacrylate, polymethylmethacrylate and polyethylmethacrylate, a vinylic compound such as polyvinylbutyral, polyvinylacetate and polyvinylalcohol, and a mixture thereof.
The diluent used in the composition according to the present invention may be selected from the group consisting of α-terpineol, texanol, dioctyl
phthalate, dibutyl phthalate, cyclohexane, hexane, toluene, benzylalcohol, dioxane, diethyleneglycol, ethyleneglycol monobutyl ether, ethyleneglycol monobutyl ether acetate, diethyleneglycol monobutyl ether, diethyleneglycol monobutyl ether acetate, and a mixture thereof.
5 The inorganic thixotrophic agent used in the composition is bentonite or silica and is preferably Aerosil (available from DEGUSSA, Germany).
The composition according to the present invention containing 0.1 to 5 wt% of the inorganic thixotrophic agent changes in aspect ratio are small before and after a heat-treating process, thereby preventing the deformation of the io printed film upon preparing of an electrode.
The conductive metal material used in the present invention may include a silver powder, a copper powder, a nickel powder, or an aluminum powder. The silver powder is prefered. Below, the conductive metal material exemplified by silver powder is described for convenience.
15 The shape of the silver powder may include at least one selected from the group consisting of a spherical shape, an acicular shape, a planar shape, and an amorphous shape. The average particle size of the silver powder may be 0.5 to 5 βm in consideration of ease of pasting and of density thereof upon heat-treating. Furthermore, the silver powder may be contained in an amount of 60 to 90 wt% in
20 the conductive paste composition in consideration of the thickness and line resistance of the electrode formed upon printing.
The glass frit used in the present invention may have an average particle size of 0.5 to 5 μm, and the component thereof may include at least one selected from the group consisting of 43 to 91 wt% of PbO, 21 wt% or less of SiO2, 25
25. wt% or less of B2O3+Bi2O3, 7 wt% or less of Al2O3, 20 wt% or less of ZnO, 15 wt% or less of Na2O+K2O+Li2O, and 15 wt% or less of BaO+CaO+MgO+SrO. The glass frit may have a glass softening temperature of 320 to 5200C and a coefficient of thermal expansion of 62 to 110 x 10"7/°C . The amount of glass frit may be set to 1 to 10 wt% based on the total weight of the conductive paste
30 composition. If the amount of glass frit is smaller than 1 wt%, incomplete heat- treating occurs, undesirably increasing electric resistivity. In contrast, if the amount thereof is greater than 10 wt%, the glass component is excessively
increased in the heat-treated silver powder body, undesirably increasing electric resistivity.
The composition according to the present invention may further include an additive typically known in the art, as necessary. For example, the additive may include at least one selected from the group consisting of a photosensitizer, a polymerization inhibitor, a defoaming agent, a leveling agent and an organic thixotrophic agent.
The conductive paste composition according to the present invention may be employed for preparing a surface electrode of a solar cell. A method of preparing an electrode using the inventive conductive paste composition comprises the steps of: printing the conductive paste composition on a substrate; drying the printed conductive paste thus obtained; and heat-treating the dried conductive paste.
The electrode according to the present invention may have a thickness of 10 to 40 μin.
The electrode paste printed (or patterned) using the inventive conductive paste composition may be dried at a temperature of 150 to 250 °C for ones of min, and then heat-treated at a temperature of 700 to 900 °C for ones of sec.
The conductive paste composition according to the present invention may be printed on the substrate using any printing process selected from the group consisting of screen printing, gravure offset printing, rotary screen printing, and lift off printing.
The electrode prepared using the inventive conductive paste composition can be usefully employed as the surface electrode of the solar cell. FIG. 1 schematically shows the solar cell. The silicon substrate may include polycrystalline silicon or single crystal silicon. In order to generate electromotive force in response to light incidence, a p-n junction is formed in the vicinity of a light-receiving surface. In the formation of the p-n junction, the substrate may be a p-type and the light-receiving surface side may be an n-type due to diffusion, or conversely the substrate may be an n-type and the light- receiving surface side may be a p-type.
In order to prevent the reflection of light from the light-receiving surface
of the solar cell and increase light-receiving efficiency, an anti-reflective layer is formed on the light-receiving surface through chemical vapor deposition (CVD). The anti-reflective layer may be formed of titanium oxide, silicon dioxide, or silicon nitride. Particularly useful is silicon nitride because of its high device stability. The anti-reflective layer may be used as a passivation layer. The thickness of the anti-reflective layer may be about 50 to 100 nm. Also, a back electrode formed on the backside of the silicon substrate is prepared by applying a conductive metal material such as aluminum and then drying it. The conductive paste according to the present invention may be utilized to form the surface electrode on the surface of the anti-reflective layer. The pattern of the surface electrode is formed and then dried, after which the surface electrode and the back electrode are simultaneously heat-treated. Examples of the shape of the pattern of the surface electrode may include parallel lines and lattices.
The solar cell fabricated using the composition according to the present invention may have an additional element for improving cell performance. For example, to increase reliability in terms of cell performance, a welding layer may be formed on the surface of the surface electrode.
The surface electrode formed using the conductive paste according to the present invention has an aspect ratio (height/width) of 0.3 or more. Hence, when such a surface electrode is included in the solar cell, the solar cell can increase its light-receiving area to 93% or above. In the case where the conductive paste according to the present invention is heat-treated, line resistance is reduced, so that electromotive force generated by light incidence can be efficiently used as current. The following Examples are intended to further illustrate the present invention without limiting its scope.
Preparation of Binder Resin Mixture
PREPARATIVE EXAMPLE 1
In a 1 I flask, 10 g of ethylcellulose (EC) (Ethocel Std 100, available
from DOW CHEMICAL5 USA) was homogeniged with a mixture of 85 g of Texanol (available from EASTMAN) and 5 g of dioctyl phthalate (DOP) at 85 °C for 1 hour, to obtain a binder resin mixture.
PREPARATIVE EXAMPLE 2
In a 1 t flask, 20 g of EC (Ethocel Std 45, available from DOW CHEMICAL, USA) was homogeniged with a mixture of 75 g of Texanol (available from EASTMAN) and 5 g of DOP at 850C for 1 hour, to obtain a binder resin mixture.
Preparation of Conductive Paste Composition
EXAMPLE 1
15 g of the binder resin mixture obtained in Preparative Example 1 (containing 1.5 g of the binder resin and 13.5 g of Texanol and DOP), 1 g of a dispersant (BYK 110, available from BYK CHEMI), and 5 g of glass frit (having an average particle size of 1 μm) were dispersed using a three roll-mill, the resulting material was mixed with 78.5 g of silver powder (having a spherical shape and an average particle size of 1 μm) and 0.5 g of an inorganic thixotrophic agent (Aerosil-200, available from DEGUSSA), and then dispersed using a three roll-mill. The mixture thus obtained was subjected to depressurization and defoaming, to obtain a conductive paste, which was filtered using a 325 SUS mesh filter, and the paste's properties were evaluated.
EXAMPLE 2
15 g of the binder resin mixture obtained in Preparative Example 1 (containing 1.5 g of the binder resin and 13.5 g of Texanol and DOP), 1 g of a dispersant (BYK 110, available from BYK CHEMI), and 5 g of glass frit (having an average particle size of 1 μm) were dispersed using a three roll-mill, the
resulting material was mixed with 78 g of silver powder (having a spherical shape and an average particle size of 1 μm) and 1 g of an inorganic thixotrophic agent (Aerosil-200, available from DEGUSSA), and then dispersed using a three roll- mill. The mixture thus obtained was subjected to depressurization and defoaming, to obtain a conductive paste, which was filtered using a 325 SUS mesh filter, and the paste's properties were evaluated.
EXAMPLE 3
15 g of the binder resin mixture obtained in Preparative Example 2
(containing 3 g of the binder resin and 12 g of Texanol and DOP), 1 g of a dispersant (BYK 110, available from BYK CHEMI), and 5 g of glass frit (having an average particle size of 1 μm) were dispersed using a three roll-mill, the resulting material was mixed with 78 g of silver powder (having a spherical shape and an average particle size of 1 μm) and 1 g of an inorganic thixotrophic agent (Aerosil-200, available from DEGUSSA), and then dispersed using a three roll- mill. The mixture thus obtained was subjected to depressurization and defoaming, to obtain a conductive paste, which was filtered using a 325 SUS mesh filter, and the paste's properties were evaluated.
EXAMPLE 4
13 g of the binder resin mixture obtained in Preparative Example 1 (containing 1.3 g of the binder resin and 11.7 g of Texanol and DOP), 1 g of a dispersant (BYK 110, available from BYK CHEMI), and 5 g of glass frit (having an average particle size of 1 μm) were dispersed using a three roll-mill, the resulting material was mixed with 80 g of silver powder (having a spherical shape and an average particle size of 1 μm) and 1 g of an inorganic tliixotrophic agent (Aerosil-200, available from DEGUSSA), and then dispersed using a three roll- mill. The mixture thus obtained was subjected to depressurization and defoaming, to obtain a conductive paste, which was filtered using a 325 SUS mesh filter, and the paste's properties were evaluated.
EXAMPLE 5
11 g of the binder resin mixture obtained in Preparative Example 1 (containing 1.1 g of the binder resin and 9.9 g of Texanol and DOP), 1 g of a dispersant (BYK 110, available from BYK CHEMI), and 5 g of glass frit (having an average particle size of 1 μm) were dispersed using a three roll-mill, the resulting material was mixed with 82 g of silver powder (having a spherical shape and an average particle size of 1 μm) and 1 g of an inorganic thixotrophic agent (Aerosil-200, available from DEGUSSA), and then dispersed using a three roll- mill. The mixture thus obtained was subjected to depressurization and defoaming, to obtain a conductive paste, which was filtered using a 325 SUS mesh filter, and the paste's properties were evaluated.
EXAMPLE 6
15 g of the binder resin mixture obtained in Preparative Example 1 (containing 1.5 g of the binder resin and 13.5 g of Texanol and DOP), 1 g of a dispersant (BYK 110, available from BYK CHEMI), and 5 g of glass frit (having an average particle size of 1 μm) were dispersed using a three roll-mill, the resulting material was mixed with 38 g of silver powder (having a spherical shape and an average particle size of 1 μm), 40 g of silver powder (having a flake shape and an average particle size of 3 μm) and 1 g of an inorganic thixotrophic agent (Aerosil-200, available from DEGUSSA), and then dispersed using a three roll- mill. The mixture thus obtained was subjected to depressurization and defoaming, to obtain a conductive paste, which was filtered using a 325 SUS mesh filter, and the paste's properties were evaluated.
EXAMPLE 7
15 g of the binder resin mixture obtained in Preparative Example 1 (containing 1.5 g of the binder resin and 13.5 g of Texanol and DOP), 1 g of a
dispersant (BYK 110, available from BYK CHEMI), and 5 g of glass frit (having an average particle size of 1 μm) were dispersed using a three roll-mill, the resulting material was mixed with 78 g of silver powder (having a spherical shape and an average particle size of 2 μm) and 1 g of an inorganic thixotrophic agent (Aerosil-200, available from DEGUSSA), and then dispersed using a three roll- mill. The mixture thus obtained was subjected to depressurization and defoaming, to obtain a conductive paste, which was filtered using a 325 SUS mesh filter, and the paste's properties were evaluated.
COMPARATIVE EXAMPLE 1
15 g of the binder resin mixture obtained in Preparative Example 1 (containing 1.5 g of the binder resin and 13.5 g of Texanol and DOP), 1 g of a dispersant (BYK 110, available from BYK CHEMI), and 5 g of glass frit (having an average particle size of 1 μm) were dispersed using a three roll-mill, the resulting material was mixed with 79 g of silver powder (having a spherical shape and an average particle size of 1 μm) and then dispersed using a three roll-mill. The mixture thus obtained was subjected to depressurization and defoaming, to obtain a conductive paste, which was filtered using a 325 SUS mesh filter, and the paste's properties were evaluated.
COMPARATIVE EXAMPLE 2
15 g of the binder resin mixture obtained in Preparative Example 1 (containing 1.5 g of the binder resin and 13.5 g of Texanol and DOP), 1 g of a dispersant (BYK 110, available from BYK CHEMI), and 5 g of glass frit (having an average particle size of 1 μm) were dispersed using a three roll-mill, the resulting material was mixed with 39 g of silver powder (having a spherical shape and an average particle size of 1 μm) and 40 g of silver powder (having a flake shape and an average particle size of 3 μm) and then dispersed using a three roll- mill. The mixture thus obtained was subjected to depressurization and defoaming, to obtain a conductive paste, which was filtered using a 325 SUS
mesh filter, and the paste's properties were evaluated.
COMPARATIVE EXAMPLE 3
15 g of the binder resin mixture obtained in Preparative Example 1
(containing 1.5 g of the binder resin and 13.5 g of Texanol and DOP), 1 g of a dispersant (BYK 110, available from BYK CHEMI), and 5 g of glass frit (having an average particle size of 1 μm) were dispersed using a three roll-mill, the resulting material was mixed with 78 g of silver powder (having a spherical shape and an average particle size of 1 μm) and 1 g of an organic thixotrophic agent (BYK 410, available from BYK CHEMI) and then dispersed using a three roll- mill. The mixture thus obtained was subjected to depressurization and defoaming, to obtain a conductive paste, which was filtered using a 325 SUS mesh filter, and the paste's properties were evaluated.
Evaluation of Properties
The properties of the conductive pastes prepared in Examples 1 to 7 and Comparative Examples 1 to 3 were evaluated as follows. The results are shown in Table 1.
(1) Viscosity & Thixo Index (T.I.)
The viscosity was measured at a shear rate of 10 s"1 using a viscometer (RVl, available from HAKKE) and a Ti 35 spindle. Furthermore, the viscosity was measured at a shear rate of each of 1 s"1 and 10 s"1, and then, a viscosity ratio represented by viscosity measured at 1 s'Vviscosity measured at 10 s"1, called the thixo index, was determined.
(2) Aspect Ratio
Printability for a width of 100 μm was confirmed using a 325 mesh
screen. Printing was performed at a squeegee rate of 40 cm/min using a screen printer, thereafter drying at 1500C was performed. Subsequently, heat-treating was performed in a heat-treating furnace (available from SIEREATHERM) at a maximum of 7500C , the printed shape was observed, and an aspect ratio (AJR) was determined. Upon heat-treating, the extent of the deformation of the film could be seen by comparing changes in aspect ratio before and after the heat- treating process.
(3) Measurement of Resistance
The line width and thickness of lines 100 μm wide were measured, and resistance was measured using a multi-meter (available from FLUKE), thus calculating resistivity (= resistance x line width x thickness / length).
<Table 1>
As shown in Table 1, the conductive paste of Examples 1 to 7 had small changes in aspect ratio before and after the heat-treating process, thus reducing the deformation of the printed film. However, the composition of the comparative examples had large changes in aspect ratio, thus increasing the deformation of the printed film.
In Examples 1 to 7, as the amount of inorganic thixotropliic agent was increased, the aspect ratio could be seen to increase. This indicates that an effect of preventing deformation of the printed film upon heat-treating becomes superior. Also, as the amount of silver powder was increased, it could be seen that resistance was improved and the aspect ratio was increased.
In particular, in the conductive composition of Example 5, both the aspect ratio (0.313) before the heat-treating process and the aspect ratio (0.284) after the heat-treating process were improved. When the aspect ratio was improved in this way, the light-receiving area was increased and line resistance was reduced.
As described in above, the present invention provides a conductive paste composition and a method of preparing an electrode using the same. According to the present invention, the conductive paste composition for preparing an electrode can prevent the deformation of the printed film upon heat-drying and heat-treating after printing thereof. Therefore, when a surface electrode formed using the inventive conductive paste composition according to the present invention is included in a solar cell, the solar cell can have an enlarged light- receiving area and high photoelectric conversion efficiency.
While the invention has been described with respect to the above specific embodiments, it should be recognized that various modifications and changes may be made to the invention by those skilled in the art which also fall within the scope of the invention as defined by the appended claims.
Claims
1. A conductive paste composition comprising a binder resin, a diluent, a conductive metal material, glass frit, and an inorganic thixotrophic agent.
2. The conductive paste composition of claim 1, wherein the conductive paste composition comprises 1 to 10 wt% of the binder resin, 5 to 25 wt% of the diluent, 60 to 90 wt% of the conductive metal material, 1 to 10 wt% of the glass frit, and 0.1 to 5 wt% of the inorganic thixotrophic agent.
3. The conductive paste composition of claim 1, wherein the composition further comprises 0.1 to 5 parts by weight of a dispersant based on the total weight of the composition.
4. The conductive paste composition of claim 1, wherein the binder resin is a cellulose-based compound having a viscosity of 5 to 500 cps (5 wt% solvent in an 8:2 mixture of toluene and ethanol), or an acrylic resin-based compound having a molecular weight of 5,000 to 50,000.
5. The conductive paste composition of claim 1, wherein the diluent is selected from the group consisting of α-terpineol, texanol, dioctyl phthalate, dibutyl phthalate, cyclohexane, hexane, toluene, benzylalcohol, dioxane, diethyleneglycol, ethyleneglycol monobutyl ether, ethyleneglycol monobutyl ether acetate, diethyleneglycol monobutyl ether, diethyleneglycol monobutyl ether acetate, and a mixture thereof.
6. The conductive paste composition of claim 1, wherein the inorganic thixotrophic agent is bentonite or silica.
7. The conductive paste composition of claim 1, wherein the conductive metal material is a silver powder having an average particle size of 0.5 to 5 μm.
8. The conductive paste composition of claim 1, wherein the composition further comprises at least one additive selected from the group consisting of a photosensitizer, a polymerization inhibitor, a defoaming agent, a leveling agent, and an organic thixotrophic agent.
9. A method of preparing an electrode, which comprises the steps of: printing the conductive paste composition on a substrate; drying the printed conductive paste thus obtained; and heat-treating the dried conductive paste.
10. The method of claim 9, wherein the electrode has a thickness of 10 to 40 μm.
11. The method of claim 9, wherein the printed electrode paste is heat-treated at a temperature of 700 to 900 °C .
12. The method of claim 9, wherein the conductive paste composition is printed on the substrate by screen printing, gravure offset printing, rotary screen printing, or lift off printing.
13. The method of claim 9, wherein the electrode is a surface electrode of a solar cell.
14. A solar cell comprising the electrode prepared by the method of claim 9 as a surface electrode.
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JPH0766690B2 (en) * | 1986-10-13 | 1995-07-19 | 株式会社村田製作所 | Conductive paste |
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- 2009-06-25 WO PCT/KR2009/003444 patent/WO2009157727A2/en active Application Filing
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KR940004869B1 (en) * | 1990-12-11 | 1994-06-02 | 주식회사 코오롱 | Polyamide resin composition |
KR19980046579A (en) * | 1996-12-12 | 1998-09-15 | 조희재 | Thick Film Conductor Paste Composition for Secondary Electrodes of Chip Resistor |
KR20050114408A (en) * | 2004-06-01 | 2005-12-06 | 주식회사 동진쎄미켐 | Pb free ag paste composition for pdp address electrode |
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CN102194898A (en) * | 2010-03-15 | 2011-09-21 | 常州天合光能有限公司 | Electric-conducting nickel paste for solar cell |
US20150364622A1 (en) * | 2013-03-27 | 2015-12-17 | Cheil Industries Inc. | Composition for forming solar cell electrode and electrode produced from same |
JP2016538708A (en) * | 2013-03-27 | 2016-12-08 | チェイル インダストリーズ インコーポレイテッド | Composition for forming solar cell electrode and electrode produced thereby |
US9899545B2 (en) * | 2013-03-27 | 2018-02-20 | Cheil Industries, Inc. | Composition for forming solar cell electrode and electrode produced from same |
JP2016533019A (en) * | 2013-09-13 | 2016-10-20 | チェイル インダストリーズ インコーポレイテッド | Composition for forming solar cell electrode and electrode produced thereby |
EP3026674A4 (en) * | 2013-09-13 | 2017-02-22 | Cheil Industries Inc. | Composition for forming solar cell electrode, and electrode produced from composition |
KR101835921B1 (en) * | 2014-03-18 | 2018-03-07 | 제일모직주식회사 | Composition for forming solar cell electrode and electrode prepared using the same |
WO2016007351A1 (en) * | 2014-07-11 | 2016-01-14 | E. I. Du Pont De Nemours And Company | Flowable compositions with low temperature curing to form thermally conductive pathways in electronics type applications and methods relating thereto |
US9840651B2 (en) | 2014-07-11 | 2017-12-12 | E I Du Pont De Nemours And Company | Flowable compositions with low temperature curing to form thermally conductive pathways in electronics type applications and methods relating thereto |
JP2016213440A (en) * | 2015-04-28 | 2016-12-15 | 三星エスディアイ株式会社Samsung SDI Co., Ltd. | Electrode forming composition, electrode manufactured by using the same, and solar cell |
WO2016202841A1 (en) | 2015-06-17 | 2016-12-22 | Basf Se | Conductive paste comprising lubricating oils and semiconductor device |
Also Published As
Publication number | Publication date |
---|---|
CN102077301A (en) | 2011-05-25 |
KR20100000685A (en) | 2010-01-06 |
WO2009157727A3 (en) | 2010-04-15 |
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