WO2018086358A1 - 有机发光二极管阵列基板及制备方法、显示装置 - Google Patents

有机发光二极管阵列基板及制备方法、显示装置 Download PDF

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WO2018086358A1
WO2018086358A1 PCT/CN2017/090685 CN2017090685W WO2018086358A1 WO 2018086358 A1 WO2018086358 A1 WO 2018086358A1 CN 2017090685 W CN2017090685 W CN 2017090685W WO 2018086358 A1 WO2018086358 A1 WO 2018086358A1
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electrode
organic light
insulating layer
conductive film
oxidation
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PCT/CN2017/090685
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English (en)
French (fr)
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张粲
杨盛际
陈小川
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京东方科技集团股份有限公司
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Priority to US15/745,574 priority Critical patent/US10388671B2/en
Publication of WO2018086358A1 publication Critical patent/WO2018086358A1/zh

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    • H10K50/822—Cathodes characterised by their shape

Definitions

  • At least one embodiment of the present disclosure is directed to an organic light emitting diode array substrate, a method of fabricating the same, and a display device.
  • OLED organic light emitting diode
  • the organic light emitting diode (OLED) display structure has a series of characteristics such as autonomous illumination, low voltage direct current driving, full curing, wide viewing angle, light weight, large size and flexible panel, simple process, and low cost potential. It meets the requirements of higher performance and greater information capacity of display technology in today's information technology era.
  • OLED microdisplay refers to a silicon-based CMOS (Complementary Metal Oxide Semiconductor)-driven organic light-emitting device (including structures such as an anode, an organic light-emitting layer, and a cathode) with a display size of 1 inch or less, and a pixel resolution of up to 800.
  • CMOS Complementary Metal Oxide Semiconductor
  • the OLED microdisplay has become one of the hotspots in the current research field of VR/AR.
  • OLEDs Compared with liquid crystal displays, OLEDs have the advantages of low energy consumption, low production cost, self-illumination, wide viewing angle and fast response.
  • OLEDs have begun to replace traditional LCD displays in display fields such as smart glasses, head-mounted displays (HMDs) and night vision devices.
  • HMDs head-mounted displays
  • the current production yield of OLED micro-displays is still not high, such as silicon wafers.
  • the micro-oxidation of the upper electrode causes uneven carrier carriers injected into the OLED device, which may cause uneven illumination and dark spots of the organic light-emitting diode array substrate.
  • At least one embodiment of the present disclosure provides an organic light emitting diode array substrate, including: a substrate; a first electrode pattern and an insulating layer disposed on the substrate, wherein the first electrode pattern includes a plurality of strips a first electrode, the first electrode protrudes over the insulating layer to form a step therebetween; an anti-oxidation conductive film disposed on the first electrode pattern and the insulating layer, wherein The oxidation resistant conductive film is disconnected at the step of the first electrode and the insulating layer.
  • Adjacent first electrodes are spaced apart by the insulating layer.
  • a height difference between the first electrode and the insulating layer is greater than the resistance in a direction perpendicular to a surface of the substrate.
  • the thickness of the oxidized conductive film is greater than the thickness of the oxidized conductive film.
  • a height difference between the first electrode and the insulating layer is greater than
  • the thickness of the oxidation resistant conductive film is
  • the organic light emitting diode array substrate provided by at least one embodiment may further include an organic light emitting layer and a second electrode disposed on the oxidation resistant conductive film.
  • the oxidation resistant conductive film has greater oxidation resistance than the first electrode pattern.
  • the material of the oxidation resistant conductive film includes at least one of gold, silver, copper, zinc, chromium and alloys thereof, and a conductive oxidized material.
  • the substrate includes a silicon wafer, a silicon-on-insulator substrate, or a glass substrate.
  • a cross section of the first electrode perpendicular to the substrate includes at least one of a rectangular shape, an inverted trapezoidal shape, and a parallelogram shape.
  • At least one embodiment of the present disclosure also provides a display device including any of the above-described organic light emitting diode array substrates.
  • At least one embodiment of the present disclosure further provides a method of fabricating an organic light emitting diode array substrate, comprising: providing a substrate; forming a first electrode pattern and an insulating layer on the substrate, wherein the first electrode pattern includes a plurality of a strip-shaped first electrode, the first electrode protrudes over the insulating layer to form a step therebetween; an anti-oxidation conductive film is formed on the first electrode pattern and the insulating layer, wherein The oxidation resistant conductive film is disconnected at a step of the first electrode pattern and the insulating layer.
  • adjacent ones of the first electrodes are spaced apart by the insulating layer.
  • the preparation method provided by at least one embodiment of the present disclosure may further include the antioxidant An organic light-emitting layer and a second electrode are formed on the conductive film.
  • a height difference between the first electrode pattern and the insulating layer is greater than
  • the thickness of the oxidation resistant conductive film may be any suitable thickness of the oxidation resistant conductive film.
  • the method of forming the oxidation resistant conductive film includes thermal evaporation.
  • an angle between the direction of the thermal evaporation and the substrate is an acute angle.
  • FIG. 1 is a schematic structural diagram of an organic light emitting diode array substrate according to an embodiment of the present disclosure
  • FIG. 2 is a schematic diagram of a thermal evaporation process of an organic light emitting diode array substrate according to an embodiment of the present disclosure
  • FIG. 3 is a schematic structural diagram of another organic light emitting diode array substrate according to an embodiment of the present disclosure.
  • FIG. 4 is a schematic structural diagram of another organic light emitting diode array substrate according to an embodiment of the present disclosure.
  • FIG. 5 is a schematic structural diagram of another organic light emitting diode array substrate according to an embodiment of the present disclosure.
  • 6a-6j are process diagrams of a method for fabricating an organic light emitting diode array substrate according to an embodiment of the present disclosure.
  • the electrode surface is easily micro-oxidized before forming the organic light-emitting layer, resulting in poor electrical contact performance with the organic light-emitting layer.
  • the carrier (electron or hole) in the organic light-emitting device finally formed in the organic light-emitting diode array substrate is unevenly distributed, so that a dark spot phenomenon due to uneven light emission in the corresponding pixel region is caused.
  • the organic light emitting device may include a multilayer structure such as a first electrode, an organic light emitting layer, and a second electrode, wherein the first electrode is an anode, the second electrode is a cathode, or One electrode is the cathode and the second electrode is the anode.
  • the organic light emitting device may further include a functional layer such as a hole injection layer, a hole transport layer, an electron injection layer, an electron transport layer, or the like.
  • At least one embodiment of the present disclosure provides an organic light emitting diode array substrate, a method of fabricating the same, and a display device.
  • the organic light emitting diode array substrate includes a substrate, a first electrode pattern and an insulating layer disposed on the substrate, and an oxidation resistant conductive film disposed on the first electrode pattern and the insulating layer, wherein the first electrode pattern includes a plurality of strips a first electrode that protrudes above the insulating layer to form a step therebetween.
  • the plurality of first electrodes constitute a first electrode pattern, and the adjacent first electrodes are spaced apart by an insulating layer.
  • an anti-oxidation conductive film is formed on the first electrode pattern included therein, thereby avoiding carrier distribution caused by local micro-oxidation of the first electrode included in the first electrode pattern. a problem of uniformity, and the first electrode protrudes above the insulating layer to form a step therebetween, so that when the oxidation-resistant conductive film is formed, the oxidation-resistant conductive film is The steps are broken and do not require subsequent processes such as photolithography processes.
  • the meaning expressed by using the first electrode pattern instead of the first electrode is the same, for example, the first described in the embodiment.
  • the electrode pattern surface micro-oxidation is the same as the first electrode surface micro-oxidation; further, for example, the insulating layer described in the embodiment encapsulates the first electrode pattern equivalent to the insulating layer to wrap the first electrode.
  • the oxidation resistant conductive film covers the first electrode pattern, and if the first electrode pattern is made of a material that is easily oxidized, such as when the first electrode pattern is used as a cathode of the organic light emitting region device, It is possible to prevent the surface of the first electrode pattern which is easily oxidized from being oxidized or partially oxidized to cause a decrease in electrical conductivity, and it is possible to improve the electrical contact state with the organic light-emitting layer formed later on the first electrode pattern; In an embodiment, the oxidation-resistant conductive film may further enable the injected carriers (electrons or holes) to be uniformly distributed on the oxidation-resistant conductive film corresponding to the first electrode pattern in the finally formed organic light-emitting device.
  • the oxidation-resistant conductive film since there is a step structure between the first electrode and the insulating layer included in the first electrode pattern, the oxidation-resistant conductive film is automatically disconnected at the step, and no subsequent light such as light is required. Engraving and other processes.
  • FIG. 1 is a schematic structural view of the organic light emitting diode array substrate.
  • the organic light emitting diode array substrate includes a substrate 100, a first electrode pattern 102 and an insulating layer 101 disposed on the substrate 100, and an anti-reflection layer disposed on the first electrode pattern 102 and the insulating layer 101.
  • the oxidized conductive film 103, the plurality of strip-shaped first electrodes 1021 included in the first electrode pattern 102 protrude above the insulating layer 101 to form a step therebetween.
  • the first electrode 1021 of the first electrode pattern 102 is embedded in the insulating layer 101 as shown in FIG. 1, it can be understood that the first electrode pattern 102 may also be formed on the insulating layer 101, so that the first electrode 1021 protrudes above the insulating layer 101 to form a step therebetween.
  • the insulating layer 101 wraps the first electrode pattern 102 during the formation process, and a slight steep slope is formed at a position in contact with the insulating layer 101 in the circumferential direction of the first electrode 1021 included in the first electrode pattern 102.
  • a steep slope may be formed in The oxidation-resistant conductive film 103 on the insulating layer is not electrically connected to the first electrode pattern.
  • the adjacent first electrodes 1021 of the first electrode pattern 102 are not short-circuited by the anti-oxidation conductive film 103.
  • the adjacent first electrodes 1021 are spaced apart by the insulating layer 101.
  • the difference in height between the first electrode 1021 and the insulating layer 101 included in the first electrode pattern 102 is greater than the thickness of the formed oxidation resistant conductive film 103.
  • it is significantly larger than the thickness of the oxidation resistant conductive film 103, for example, the height difference may be greater than
  • the disclosure includes but is not limited to.
  • the thickness of the oxidation resistant conductive film 103 may be The disclosure includes but is not limited to.
  • the material of the oxidation resistant conductive film 103 may include at least one of gold, silver, copper, zinc, chromium, or the like or an alloy thereof, or a conductive oxidized material.
  • a metal material for example, magnesium or magnesium alloy
  • the conductive oxide material may include, for example, indium tin oxide (ITO), indium gallium zinc oxide (IGZO), or the like.
  • the substrate 100 may be, for example, a silicon wafer or a silicon-on-insulator (SOI) substrate, a glass substrate, or the like.
  • SOI silicon-on-insulator
  • FIG. 2 is a schematic view of forming an oxidation resistant conductive film by a thermal evaporation process.
  • the angle between the thermal evaporation direction and the substrate 100 may be an acute angle, and the first electrode pattern 102 is included in the evaporation process.
  • the height difference between the one electrode 1021 and the insulating layer 101 is such that the first electrode pattern 102 blocks a portion of the oxidation-resistant conductive film 103 from being formed on the insulating layer 101, and thus, one end of the oxidation-resistant conductive film 103 on the insulating layer 101 is formed.
  • the adjacent electrodes of the first electrode pattern 102 do not communicate with each other through the oxidation-resistant conductive film 103 to cause a short circuit.
  • FIG. 3 is another structural schematic diagram of the organic light emitting diode array substrate.
  • the first electrode pattern 102 includes a plurality of strip-shaped first electrodes 1021 whose vertical cross section (a section perpendicular to the plane of the substrate 100) has an inverted trapezoidal shape and a cross section thereof Width of substrate 100 Greater than the width of the substrate 100, the first electrode pattern 102 of the trapezoidal structure blocks a portion of the insulating layer around the first electrode 1021 away from the bottom edge of the substrate 100 during the formation of the oxidation-resistant conductive film 103 by, for example, thermal evaporation. 101. Thus, the oxidation-resistant conductive film 103 formed on the insulating layer 101 is disconnected from the first electrode 1021 around it.
  • the shape of the vertical section of the first electrode 1021 included in the first electrode pattern 102 in the OLED array substrate is not limited to the above-described inverted trapezoidal structure, as long as it is the first At least one side surface of the electrode 1021 is formed with an undercut, and the oxidation-resistant conductive film formed by thermal evaporation is disconnected from at least one electrode of the adjacent first electrode pattern 102, and thus, the first electrode pattern 102 The adjacent electrodes in the middle are not connected and short-circuited.
  • the shape of the cross section of the first electrode 1021 having the undercut structure in the direction perpendicular to the substrate 100 may further include, for example, a parallelogram, a right-angled trapezoid, or the like, and all of the first electrode patterns 102 having the undercut shape on both sides can be obtained.
  • the inverted trapezoidal structure in the above embodiment is such that both sides of the formed first electrode pattern 102 are formed with an undercut structure.
  • the A region shown in FIG. 3 is an undercut structure formed by one side surface of the first electrode 1021 included in the first electrode pattern 102.
  • the angle between the side surface and the portion of the plane where the insulating layer 101 is located (or the plane of the substrate 100) that is not in contact with the first electrode 1021 is an acute angle, and thus, on the side where the first electrode 1021 is formed with the undercut structure, An end of the side of the first electrode 1021 remote from the substrate 100 may be out of the end portion of the insulating layer 101 (the insulating layer 101 around the first electrode 1021) beyond the end thereof in contact with the insulating layer 101, thereby being passed through, for example, hot steaming.
  • the oxidation-resistant conductive film 103 is formed by plating, the oxidation-resistant conductive film 103 cannot be formed in the blocked portion, and short-circuiting between the adjacent first electrodes 1021 can be avoided.
  • the undercut structure is formed on the side of the same direction of all of the first electrodes, or an undercut structure is formed on both sides of the first electrode.
  • FIG. 4 is a schematic structural diagram of an organic light emitting diode array substrate according to an embodiment of the present disclosure.
  • the OLED array substrate includes a portion of the organic light-emitting device 104 disposed on the oxidation-resistant conductive film 103 except the first electrode 1021, for example, in the case where the first electrode pattern 102 serves as a cathode,
  • the organic light emitting device 104 may further include an electron injection layer 1041, an electron transport layer 1042, an organic light emitting layer 1043, a hole transport layer 1044, and a hole injection layer which are sequentially disposed on the oxidation resistant conductive film 103.
  • Layer 1045 and second electrode 1046 (anode).
  • the most basic organic light-emitting device includes a stack of an anode, an organic light-emitting layer and a cathode; in order to improve the light-emitting property of the organic light-emitting device, a hole injection layer, a hole transport layer, and electron transport may be selectively added.
  • An organic functional layer such as a layer or an electron injecting layer.
  • the first electrode pattern is used, for example, for the cathode of the organic light-emitting device
  • the second electrode is used for the anode of the organic light-emitting device, for example, the technology in the following embodiments of the present disclosure. The program is explained.
  • the first electrode 1021 included in the first electrode pattern 102 in the OLED substrate is not limited to being embedded in the insulating layer 101, and may be disposed on and insulated from the insulating layer 101. A step is formed between the layers 101.
  • the organic light emitting diode array substrate provided by at least one embodiment of the present disclosure is not limited to application on a silicon wafer, and a structure in which the first electrode 1021 protrudes over the insulating layer 101 to form a step therebetween may also be applied to, for example, glass.
  • OLED Organic Light Emitting Diode
  • At least one embodiment of the present disclosure provides a display device including the organic light emitting diode array substrate provided in the above embodiment.
  • the display device can be, for example, a mobile phone, a tablet computer, a television, a display, a notebook computer, a digital photo frame, a navigator, and the like, or any product or component having a display function.
  • a method of preparing the OLED array substrate includes: providing a substrate; forming a first electrode pattern and an insulating layer on the substrate, wherein the first electrode pattern includes a plurality of strip-shaped first electrodes, and the first electrode protrudes A step is formed on the insulating layer to form an anti-oxidation conductive film on the first electrode pattern and the insulating layer, wherein the oxidation-resistant conductive film is disconnected at the step of the first electrode and the insulating layer.
  • the specific structure of the organic light emitting diode array substrate prepared in the above preparation method can refer to the related content in the foregoing embodiment (for the embodiment of the organic light emitting diode array substrate), and the embodiment of the present disclosure does not Make a statement.
  • adjacent first electrodes are spaced apart by an insulating layer.
  • the OLED substrate prepared by at least one embodiment of the present disclosure is prepared.
  • the method may further include: forming a partial structure of the organic light-emitting device other than the first electrode on the oxidation-resistant conductive film, including forming an organic light-emitting layer, a second electrode, and the like.
  • the first electrode pattern is a cathode (corresponding to the first electrode being a cathode), and the process of forming a portion of the organic light emitting device other than the first electrode includes: covering the surface of the organic light emitting diode array substrate with oxidation resistant conductive An organic light-emitting layer and a second electrode are sequentially formed on the first electrode pattern of the thin film, and an electron injection layer, an electron transport layer, an organic light-emitting layer, a hole transport layer, a hole injection layer, and a second electrode are sequentially formed, for example.
  • FIGS. 6a-6j are an organic light emitting according to an embodiment of the present disclosure.
  • Process diagram of a diode array substrate preparation method Referring to FIGS. 6a-6j, a preparation process of an organic light emitting diode array substrate provided by an example of an embodiment of the present disclosure may include the following steps.
  • a substrate 100 is provided and a first electrode film is deposited on the substrate 100.
  • the first electrode film on the substrate 100 is patterned by a patterning process to form a first electrode pattern 102 composed of a plurality of strip-shaped first electrodes 1021.
  • the patterning process is a photolithographic patterning process, which includes, for example, coating a photoresist layer on a structure layer to be patterned, exposing the photoresist layer using a mask, and developing the exposed photoresist layer to A photoresist pattern is obtained, the structural layer is etched using a photoresist pattern, and then the photoresist pattern is optionally removed.
  • an insulating layer 101 is formed on the substrate 100 on which the first electrode pattern 102 is formed, wherein the first electrode 1021 included in the first electrode pattern 102 protrudes over the insulating layer 101 to form a step.
  • the insulating layer 101 it will wrap the periphery of the first electrode pattern 102, and a slight steep slope may be formed at a position where the first electrode 1021 of the first electrode pattern 102 is in contact with the insulating layer 101.
  • the insulating layer spaces the first electrodes, and the order of forming the first electrode patterns and the insulating layers may be reversed. For example, an insulating layer may be formed on the substrate, and then a first electrode film is deposited on the insulating layer. And patterning the first electrode film to form a first electrode pattern.
  • an oxidation resistant conductive film 103 is formed on the first electrode pattern 102 and the insulating layer 101, because the first electrode 1021 and the insulating layer 101 included in the first electrode pattern 102 are formed.
  • the step structure formed therebetween, the oxidation-resistant conductive film 103 is discontinuously discontinuous at the step, and because the first electrode 1021 includes a slight steep slope at the position where the first electrode 1021 is in contact with the insulating layer 101, and The thickness of the oxidation-resistant conductive film 103 is thin, so that the formed oxidation-resistant conductive film 103 is not in contact with the first electrode 1021 included in the first electrode pattern 102, that is, the steep slope causes the oxidation-resistant conductive film formed on the insulating layer.
  • the 103 is not electrically connected to the adjacent first electrode 1021, so the adjacent first electrode 1021 between the first electrode patterns 102 is not short-circuited by the anti-oxidation conductive film 103.
  • the method of forming the oxidation-resistant conductive film 103 is, for example, thermal evaporation. For example, by introducing a strong electric field, first, the material to be thermally evaporated is charged, and then heated and evaporated to cause the charged material molecules or particles to fly out and The electromagnetic field is precisely guided to the substrate to form an oxidation-resistant conductive film on the substrate on which the first electrode pattern and the insulating layer are formed.
  • the thickness of the anti-oxidation conductive film 103 formed may be
  • the height difference between the first electrode 1021 and the insulating layer 101 included in the first electrode pattern 102 is greater than the thickness of the oxidation resistant conductive film 103, preferably significantly larger than The thickness of the oxidation-resistant conductive film 103, for example, the height difference between the two may be greater than
  • the material for preparing the oxidation resistant conductive film 103 includes at least one of gold, silver, copper, zinc, chromium, or the like, or an alloy thereof, or a conductive oxide material. Or a combination.
  • the conductive oxide material may be, for example, indium tin oxide (ITO), indium gallium zinc oxide (IGZO), or the like.
  • the angle between the direction of thermal evaporation and the substrate is an acute angle.
  • the first electrode pattern since the first electrode pattern protrudes above the insulating layer and the thermal evaporation direction is at an acute angle to the substrate, the first electrode pattern blocks a portion of the anti-oxidation conductive film from being formed on the insulating layer. That is, at the occluded portion, the oxidation-resistant conductive film is disconnected from the electrode of the first electrode pattern, thereby ensuring that adjacent electrodes of the first electrode pattern are not connected by the oxidation-resistant conductive film.
  • At least one side surface of the first electrode 1021 is formed with an undercut structure.
  • one side of the first electrode 1021 is an undercut structure, at the side, when the direction of thermal evaporation is, for example, perpendicular to the substrate, the insulating layer is blocked by the side in the vertical direction, and is blocked.
  • the area cannot form an anti-oxidation conductive film, that is, anti- The oxidized conductive film is disconnected from at least one of the adjacent electrodes in the first electrode pattern, thereby ensuring that the adjacent first electrodes 1021 included in the first electrode pattern are not connected by the oxidation resistant conductive film.
  • the preparation process of the organic light emitting device is as shown in FIGS. 6e to 6j.
  • a film of an electron injecting layer is formed on the oxidation-resistant conductive film 103, and subjected to a patterning process to form an electron injecting layer 1041.
  • Materials for preparing the electron injecting layer include lithium fluoride, lithium oxide, lithium boron oxide, potassium oxyhydroxide, cesium carbonate, 8-hydroxyquinoline aluminum-lithium, and the like.
  • a layer of an electron transport layer film is formed on the electron injection layer 1041, and subjected to a patterning process to form an electron transport layer 1042.
  • Materials for preparing the electron transport layer include oxazole derivatives, metal chelates, azole compounds, quinoline derivatives, porphyrin derivatives, diazonium derivatives, silicon-containing heterocyclic derivatives, and the like.
  • an organic light-emitting layer film is formed on the electron transport layer 1042, and for example, an evaporation mask may be used to form the organic light-emitting layer 1043.
  • Materials for preparing the organic light-emitting layer include 8-hydroxyquinoline aluminum, 8-hydroxyquinoline aluminum, anthracene derivatives, and the like, and it may be necessary to select a corresponding organic light-emitting material, and embodiments of the present disclosure are not limited to these specific material selections.
  • a hole transport layer film is formed on the organic light-emitting layer 1043 and subjected to a patterning process to form a hole transport layer 1044.
  • the material for preparing the hole transport layer includes polyparaphenylene vinyl, polythiophene, polysilane, triphenylmethane, triarylamine, anthraquinone, pyrazoline, chewazole, carbazole, dibutyl Alkene and the like.
  • a hole injection layer film is formed on the hole transport layer 1044, and subjected to a patterning process to form a hole injection layer 1045.
  • Materials for preparing the hole injection layer include copper cyanide, molybdenum trioxide, 1-TNATA, 2-TNATA, polyaniline, PEDOT (polymer of 3,4-ethylenedioxythiophene monomer), and the like.
  • a second electrode film is formed on the hole injection layer 1045, and may be subjected to a patterning process to form the second electrode 1046.
  • Each layer in the organic light-emitting device (for example, a hole injection layer, a hole transport layer, an organic light-emitting layer, etc.)
  • the preparation of the structure is not limited to the patterning process after forming the film of each layer, and may also be, for example, forming a pixel defining layer on the substrate on which the oxidation resistant conductive film is formed, the pixel defining the groove defined by the layer Corresponding to the position of the pixel electrode, each layer component on the anti-oxidation conductive film included in the organic light-emitting device is sequentially formed in the groove defined by the pixel defining layer.
  • the preparation process of each layer structure on the anti-oxidation conductive film included in the organic light-emitting device and the preparation process of the above 6e-6i The process is reversed, that is, a hole injection layer, a hole transport layer, an organic light-emitting layer, an electron transport layer, an electron injection layer, and a second electrode are sequentially formed on the first electrode pattern.
  • the first electrode pattern and the second electrode may be an anode and a cathode, wherein the material for preparing the anode includes any one of metal aluminum and a conductive oxide (for example, ITO, IGZO), and the material for preparing the cathode includes potassium metal, lithium, Any of calcium, magnesium, indium or magnesium aluminum alloy, magnesium silver alloy, and lithium aluminum alloy.
  • the material for preparing the anode includes any one of metal aluminum and a conductive oxide (for example, ITO, IGZO)
  • the material for preparing the cathode includes potassium metal, lithium, Any of calcium, magnesium, indium or magnesium aluminum alloy, magnesium silver alloy, and lithium aluminum alloy.
  • the formation of the organic light emitting device in the above embodiment is not limited to only including at least one of the first electrode, the hole injection layer, the hole transport layer, the organic light emitting layer, the electron transport layer, the electron injection layer, and the second electrode, and may also be Forming a complete organic light emitting device on the first electrode pattern, for example, a structure in which a cathode, an organic light emitting layer, and an anode are sequentially formed, or a structure in which an anode, an organic light emitting layer, and a cathode are sequentially formed, and the organic light emitting device may further include hole injection. a layer, a hole transport layer, an organic light-emitting layer, an electron transport layer, an electron injection layer, and the like, and these functional layers are sequentially arranged according to a specific structure.
  • An embodiment of the present disclosure provides an organic light emitting diode array substrate, a preparation method thereof, and a display device, and has at least one of the following beneficial effects:
  • At least one embodiment of the present disclosure provides an organic light emitting diode array substrate in which an oxidation resistant conductive film is formed on a surface on which a first electrode pattern and an insulating layer are formed, thereby avoiding inclusion of the first electrical pattern
  • the first electrode has a problem of uneven distribution of carriers injected into the formed organic light-emitting device due to local micro-oxidation, thereby improving uniformity and yield of light emission of the organic light-emitting diode array substrate.
  • the first electrode protrudes over the insulating layer to form a step therebetween, so that when the oxidation resistant conductive film is formed, the oxidation resistant conductive film is broken at the step, and The subsequent processes such as photolithography are not required for processing, which simplifies the preparation process of the anti-oxidation conductive film.

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Abstract

一种有机发光二极管阵列基板及制备方法、显示装置。该显示器件包括：衬底；设置于所述衬底上的第一电极图案(102)和绝缘层(101)，其中，所述第一电极图案(102)包括多个条形的第一电极(1021)，所述第一电极(1021)突出于所述绝缘层(101)之上从而在二者之间形成台阶；设置于所述第一电极图案(102)和所述绝缘层(101)上的抗氧化导电薄膜(103)，其中，所述抗氧化导电薄膜(103)在所述第一电极(1021)与所述绝缘层(101)的所述台阶处断开。该抗氧化导电薄膜(103)可以改善第一电极(1021)因局部氧化造成的载流子分布不均匀的问题。

Description

有机发光二极管阵列基板及制备方法、显示装置 技术领域
本公开的至少一个实施例涉及一种有机发光二极管阵列基板及制备方法、显示装置。
背景技术
有机发光二极管(OLED)显示器结构具有自主发光、低电压直流驱动、全固化、视角宽、重量轻、可制作大尺寸与可弯曲的面板、工艺简单等一系列特点，且具有低成本的潜力，能够满足当今信息科技时代对显示技术更高性能和更大信息容量的要求。OLED微显示器指的是显示尺寸在1英寸之下，基于硅基CMOS(互补金属氧化物半导体)驱动的有机发光器件(包括例如阳极、有机发光层和阴极等结构)，像素分辨率可高达800×600以上，由此OLED微显示器成为当前VR/AR研究领域的热点之一。与液晶显示器相比，OLED具有低能耗、生产成本低、自发光、宽视角及响应速度快等优点。
目前，在智能眼镜(smart glasses)、头戴式显示器(HMD)、夜视仪等显示领域OLED已经开始取代传统的LCD显示屏，然而OLED微显示器目前生产良率仍然不高，其中例如硅晶片上的电极微氧化会造成注入OLED器件的载流子不均匀，如此会导致有机发光二极管阵列基板发光不均匀和暗点的现象。
发明内容
本公开至少一实施例提供一种有机发光二极管阵列基板，包括：衬底；设置于所述衬底上的第一电极图案和绝缘层，其中，所述第一电极图案包括多个条形的第一电极，所述第一电极突出于所述绝缘层之上从而在二者之间形成台阶；设置于所述第一电极图案和所述绝缘层上的抗氧化导电薄膜，其中，所述抗氧化导电薄膜在所述第一电极与所述绝缘层的所述台阶处断开。
例如，在本公开至少一个实施例提供的有机发光二极管阵列基板中， 相邻的所述第一电极之间由所述绝缘层间隔开。
例如，在本公开至少一个实施例提供的有机发光二极管阵列基板中，在垂直于所述衬底所在面的方向上，所述第一电极与所述绝缘层之间的高度差大于所述抗氧化导电薄膜的厚度。
例如，在本公开至少一个实施例提供的有机发光二极管阵列基板中，所述第一电极与所述绝缘层之间的高度差大于
Figure PCTCN2017090685-appb-000001
例如，在本公开至少一个实施例提供的有机发光二极管阵列基板中，所述抗氧化导电薄膜的厚度为
Figure PCTCN2017090685-appb-000002
例如，公开至少一个实施例提供的有机发光二极管阵列基板还可以包括设置于所述抗氧化导电薄膜上有机发光层和第二电极。
在本公开至少一个实施例提供的有机发光二极管阵列基板中，所述抗氧化导电薄膜的抗氧化性大于所述第一电极图案的抗氧化性。
例如，在本公开至少一个实施例提供的有机发光二极管阵列基板中，所述抗氧化导电薄膜的材料包括金、银、铜、锌、铬及其合金和导电氧化材料中的至少一种。
例如，在本公开至少一个实施例提供的有机发光二极管阵列基板中，所述衬底包括硅晶片、绝缘体上硅衬底或玻璃衬底。
例如，在本公开至少一个实施例提供的有机发光二极管阵列基板中，所述第一电极的垂直于所述衬底的截面包括矩形、倒梯形、平行四边形中的至少一种。
本公开至少一实施例还提供一种显示装置，包括上述任一的有机发光二极管阵列基板。
本公开至少一实施例还提供一种有机发光二极管阵列基板的制备方法，包括：提供衬底；在所述衬底上形成第一电极图案和绝缘层，其中，所述第一电极图案包括多个条形的第一电极，所述第一电极突出于所述绝缘层之上从而在二者之间形成台阶；在所述第一电极图案和所述绝缘层上形成抗氧化导电薄膜，其中，所述抗氧化导电薄膜在所述第一电极图案与所述绝缘层的台阶处断开。
例如，在本公开至少一个实施例提供的制备方法中，相邻的所述第一电极之间由所述绝缘层间隔开。
例如，本公开至少一个实施例提供的制备方法还可以包括在所述抗氧 化导电薄膜上形成有机发光层和第二电极。
例如，在本公开至少一个实施例提供的制备方法中，所述第一电极图案与所述绝缘层之间的高度差大于
Figure PCTCN2017090685-appb-000003
例如，在本公开至少一个实施例提供的制备方法中，所述抗氧化导电薄膜的厚度可以为
Figure PCTCN2017090685-appb-000004
例如，在本公开至少一个实施例提供的制备方法中，形成所述抗氧化导电薄膜的方法包括热蒸镀。
例如，在本公开至少一个实施例提供的制备方法中，所述热蒸镀的方向与所述衬底的夹角为锐角。
附图说明
为了更清楚地说明本发明实施例的技术方案，下面将对实施例的附图作简单地介绍，显而易见地，下面描述中的附图仅仅涉及本发明的一些实施例，而非对本发明的限制。
图1为本公开一实施例提供的一种有机发光二极管阵列基板结构示意图；
图2为本公开一实施例提供的一种有机发光二极管阵列基板热蒸镀处理示意图；
图3为本公开一实施例提供的另一种有机发光二极管阵列基板结构示意图；
图4为本公开一实施例提供的另一种有机发光二极管阵列基板结构示意图；
图5为本公开一实施例提供的另一种有机发光二极管阵列基板结构示意图；
图6a～6j为本公开一实施例提供的有机发光二极管阵列基板制备方法过程图。
具体实施方式
为使本发明实施例的目的、技术方案和优点更加清楚，下面将结合本发明实施例的附图，对本发明实施例的技术方案进行清楚、完整地描述。显然，所描述的实施例是本发明的一部分实施例，而不是全部的实施例。 基于所描述的本发明的实施例，本领域普通技术人员在无需创造性劳动的前提下所获得的所有其他实施例，都属于本发明保护的范围。
除非另外定义，本公开使用的技术术语或者科学术语应当为本发明所属领域内具有一般技能的人士所理解的通常意义。本公开中使用的“第一”、“第二”以及类似的词语并不表示任何顺序、数量或者重要性，而只是用来区分不同的组成部分。“包括”或者“包含”等类似的词语意指出现该词前面的元件或者物件涵盖出现在该词后面列举的元件或者物件及其等同，而不排除其他元件或者物件。“连接”或者“相连”等类似的词语并非限定于物理的或者机械的连接，而是可以包括电性的连接，不管是直接的还是间接的。“上”、“下”、“左”、“右”等仅用于表示相对位置关系，当被描述对象的绝对位置改变后，则该相对位置关系也可能相应地改变。
在当前的有机发光二极管阵列基板的制备过程中，例如在硅晶片上制备电极之后，在形成有机发光层之前，该电极表面容易微氧化，导致其与有机发光层之间的电接触性能变差，导致注入有机发光二极管阵列基板中最终形成的有机发光器件中的载流子(电子或空穴)分布不均匀，使得相应像素区域出光不均匀所致的暗点现象。
需要说明的是，本公开至少一个实施例提供的有机发光器件可以包括多层结构例如第一电极、有机发光层和第二电极，其中，第一电极为阳极，第二电极为阴极，或者第一电极为阴极，第二电极为阳极。所述有机发光器件还可以包括例如空穴注入层、空穴传输层、电子注入层、电子传输层等功能层。
本公开至少一个实施例提供一种有机发光二极管阵列基板及制备方法、显示装置。该有机发光二极管阵列基板包括衬底、设置于衬底上的第一电极图案和绝缘层、设置于第一电极图案和绝缘层上的抗氧化导电薄膜，其中，第一电极图案包括多个条形的第一电极，该第一电极突出于绝缘层之上从而在二者之间形成台阶。多个第一电极构成第一电极图案，相邻的第一电极之间由绝缘层间隔开。
在该有机发光二极管阵列基板中，在其包括的第一电极图案上形成一层抗氧化导电薄膜，从而避免第一电极图案所包括的第一电电极因局部微氧化造成的载流子分布不均匀的问题，并且第一电极突出于绝缘层之上以在两者之间形成台阶，使得形成抗氧化导电薄膜时，抗氧化导电薄膜即在 台阶处断开，并不需要后续工艺例如光刻工艺进行处理。
需要说明的是，在以下实施例中说明第一电极的位置、材料、形成方式等时，用第一电极图案代替第一电极所表达的意义是相同的，例如实施例中所述的第一电极图案表面微氧化与第一电极表面微氧化是相同的；再例如实施例中所述的绝缘层将第一电极图案包裹等同于绝缘层将第一电极包裹。
在一些实施例中，该抗氧化导电薄膜覆盖于第一电极图案上，如果第一电极图案是使用易于被氧化的材料制成时，例如第一电极图案作为有机发光区器件的阴极时，则可以防止容易被氧化的第一电极图案的表面被氧化或部分氧化而导致导电性能下降，可以改善与之后形成在第一电极图案之上的有机发光层之间的电接触状态；此外，在一些实施例中，该抗氧化导电薄膜还可以使得最终形成的有机发光器件中，注入的载流子(电子或空穴)在对应第一电极图案上的抗氧化导电薄膜上可以达到均匀分布状态，改善载流子注入不均匀的问题。此外，在抗氧化导电薄膜形成过程中，因第一电极图案所包括的第一电极与绝缘层之间存在台阶结构，抗氧化导电薄膜在台阶处会自动断开，并不需要后续的例如光刻等工艺过程。
下面将结合附图对根据本公开实施例的有机发光二极管阵列基板及制备方法、显示装置进行详细的描述。
本公开的至少一个实施例提供了一种有机发光二极管阵列基板，图1为该有机发光二极管阵列基板的结构示意图。例如，如图1所示，该有机发光二极管阵列基板包括衬底100、设置于衬底100上的第一电极图案102和绝缘层101、设置于第一电极图案102和绝缘层101上的抗氧化导电薄膜103，第一电极图案102所包括的多个条状第一电极1021突出于绝缘层101之上从而在二者之间形成台阶。虽然如图1所示，第一电极图案102的第一电极1021镶嵌在绝缘层101之中，但是可以理解的是，第一电极图案102也可以形成在绝缘层101之上，从而第一电极1021突出于绝缘层101之上在二者之间形成台阶。
如图1所示，绝缘层101在形成过程中会将第一电极图案102包裹起来，在第一电极图案102所包括的第一电极1021周向上与绝缘层101接触的位置会形成微小的陡坡，在通过例如热蒸镀形成抗氧化导电薄膜103过程中，由于所形成的抗氧化导电薄膜103的厚度薄，所以陡坡会使形成在 绝缘层上的抗氧化导电薄膜103不与第一电极图案电联通，如此，第一电极图案102的相邻第一电极1021之间不会通过抗氧化导电薄膜103连通而短路。
例如，在本公开至少一个实施例提供的有机发光二极管阵列基板中，相邻的第一电极1021之间由绝缘层101间隔开。
例如，在本公开至少一个实施例提供的有机发光二极管阵列基板中，第一电极图案102所包括的第一电极1021与绝缘层101之间的高度差大于形成的抗氧化导电薄膜103的厚度，优选显著大于抗氧化导电薄膜103的厚度，例如该高度差可以大于
Figure PCTCN2017090685-appb-000005
本公开包括但不限于此。
例如，在本公开至少一个实施例提供的有机发光二极管阵列基板中，抗氧化导电薄膜103的厚度范围可以为
Figure PCTCN2017090685-appb-000006
本公开包括但不限于此。
例如，在本公开至少一个实施例提供的有机发光二极管阵列基板中，抗氧化导电薄膜103的材料可以包括金、银、铜、锌、铬等或它们的合金、或导电氧化材料中的至少一种，例如其相对于形成第一电极图案的金属材料(例如，镁或镁合金)较不容易被氧化而导致导电性能下降。该导电氧化材料例如可以包括氧化铟锡(ITO)、铟镓锌氧化物(IGZO)等。
例如，在本公开至少一个实施例提供的有机发光二极管阵列基板中，衬底100例如可以为硅晶片或绝缘体上硅(SOI)衬底、玻璃衬底等。
本公开至少一个实施例提供了一种有机发光二极管阵列基板，图2为通过热蒸镀处理形成抗氧化导电薄膜的示意图。如图2所示，在热蒸镀形成抗氧化导电薄膜103的过程中，热蒸镀方向与衬底100的夹角可以为锐角，蒸镀过程中，由于第一电极图案102所包括的第一电极1021和绝缘层101之间的高度差使得第一电极图案102会遮挡部分抗氧化导电薄膜103形成在绝缘层101上，如此，形成的绝缘层101上的抗氧化导电薄膜103两端的一端与第一电极图案102接触，另一端与第一电极图案102断开，则第一电极图案102的相邻电极之间并不会通过抗氧化导电薄膜103连通而导致短路。
本公开至少一个实施例提供了一种有机发光二极管阵列基板，图3为有机发光二极管阵列基板的另一种结构示意图。如图3所示，第一电极图案102包括多个条形的第一电极1021，该第一电极1021的竖截面(垂直于衬底100所在面的截面)的形状为倒梯形，其截面远离衬底100的宽度 大于靠近衬底100的宽度，在通过例如热蒸镀形成抗氧化导电薄膜103的过程中，梯形结构的第一电极图案102远离衬底100的底边遮挡了第一电极1021周边的部分绝缘层101，如此，绝缘层101上形成的抗氧化导电薄膜103与其周边的第一电极1021是断开的。
需要说明的是，在本公开的实施例中，有机发光二极管阵列基板中的第一电极图案102所包括的第一电极1021的竖截面的形状不限定于上述倒梯形的结构，只要是第一电极1021的至少一个侧面形成有底切结构(undercut)，通过热蒸镀形成的抗氧化导电薄膜与相邻的第一电极图案102的至少一个电极是断开的，如此，第一电极图案102中的相邻电极之间不会连通而短路。具有上述底切结构的第一电极1021的在垂直于衬底100的方向上截面的形状还可以例如包括平行四边形、直角梯形等，所有侧边有底切形状的第一电极图案102都能取得同样的技术效果。上述实施例中的倒梯形的结构使得形成的第一电极图案102的两个侧面都形成有底切结构。
如图3所示的A区域为第一电极图案102包括的第一电极1021的一侧面形成的底切结构。该侧面与绝缘层101所在平面(或衬底100所在平面)中未与第一电极1021接触的部分之间的夹角为锐角，如此，在第一电极1021形成有底切结构的一侧，第一电极1021的侧边的远离衬底100的一端可以超出其与绝缘层101接触的一端而对绝缘层101形成部分(第一电极1021周边的绝缘层101)遮挡，从而在通过例如热蒸镀形成抗氧化导电薄膜103时，抗氧化导电薄膜103不能在被遮挡部分形成，即可避免相邻第一电极1021之间短路。
例如，在本公开至少一个实施例中，底切结构形成在所有第一电极的同一方向的侧面，或者在第一电极的两侧面都形成有底切结构。
本公开至少一个实施例还提供了一种有机发光二极管阵列基板，图4为本公开一实施例提供的有机发光二极管阵列基板结构示意图。如图4所示，有机发光二极管阵列基板包括设置于抗氧化导电薄膜103上的有机发光器件104中除第一电极1021之外的其它部分结构，在例如第一电极图案102作为阴极情况下，除第一电极1021之外，该有机发光器件104还可以包括依次设置于抗氧化导电薄膜103上的电子注入层1041、电子传输层1042、有机发光层1043、空穴传输层1044、空穴注入层1045和第二电极 1046(阳极)中。应该理解的是，最基本的有机发光器件包括阳极、有机发光层和阴极的叠层；为了改善有机发光器件的发光性能，还可以选择性地加入空穴注入层、空穴传输层、电子传输层、电子注入层等有机功能层。为便于解释本公开实施例中的技术方案，主要以第一电极图案例如用于有机发光器件的阴极，第二电极则用于有机发光器件的阳极为例，对本公开下述实施例中的技术方案进行说明。
在本公开至少一个实施例中，有机发光二极管阵列基板中的第一电极图案102所包括的第一电极1021并不限于镶嵌于绝缘层101内，也可以设置于绝缘层101之上并与绝缘层101之间构成台阶。
本公开至少一个实施例提供的有机发光二极管阵列基板不限于应用在硅晶片上，其第一电极1021突出于绝缘层101之上从而在二者之间形成台阶的结构也可以应用于例如在玻璃基板上制作的OLED(有机发光二极管)的有机发光二极管阵列基板，凭借此结构，在电极上制备的抗氧化导电薄膜可以在覆盖相应电极的同时在相邻电极之间自动断开，并不需要后续的例如光刻工艺等进行处理，在改善有机发光二极管阵列基板良率同时减少了工艺步骤，降低了成本。
本公开至少一个实施例提供了一种显示装置，该显示装置包括上述实施例中提供的有机发光二极管阵列基板。该显示装置例如可以为手机、平板电脑、电视机、显示器、笔记本电脑、数码相框、导航仪等任何具有显示功能的产品或部件。
本公开至少一个实施例提供了一种有机发光二极管阵列基板的制备方法。例如，制备该有机发光二极管阵列基板的方法包括：提供衬底；在衬底上形成第一电极图案和绝缘层，其中，第一电极图案包括多个条形的第一电极，第一电极突出于绝缘层之上从而在二者之间形成台阶；在第一电极图案和绝缘层上形成抗氧化导电薄膜，其中，抗氧化导电薄膜在第一电极与绝缘层的台阶处断开。需要说明的是，上述制备方法中制备的有机发光二极管阵列基板的具体化结构，可以参考前述实施例(关于有机发光二极管阵列基板的实施例)中的相关内容，本公开的实施例在此不做赘述。
例如，在本公开至少一个实施例提供的有机发光二极管阵列基板的制备方法中，相邻的第一电极之间由绝缘层间隔开。
例如，本公开至少一个实施例提供的制备该有机发光二极管阵列基板 的方法还可以包括：在抗氧化导电薄膜上形成有机发光器件的除第一电极之外的其它部分结构，包括形成有机发光层和第二电极等。例如第一电极图案为阴极(相当于第一电极为阴极)，形成该有机发光器件的除第一电极之外的其它部分结构的过程包括：在有机发光二极管阵列基板的表面覆盖有抗氧化导电薄膜的第一电极图案上依次形成有机发光层以及第二电极，又例如依次形成电子注入层、电子传输层、有机发光层、空穴传输层、空穴注入层和第二电极。
为便于解释本公开实施例中的技术方案，在本公开实施例的一个示例中，对有机发光二极管阵列基板的制备方法进行说明，图6a-6j为本公开一实施例提供的一种有机发光二极管阵列基板制备方法的过程图。参照图6a-6j，本公开实施例的一个示例提供的有机发光二极管阵列基板的制备过程可以包括如下步骤。
如图6a所示，提供一衬底100并在该衬底100上沉积一层第一电极薄膜。
如图6b所示，通过构图工艺对衬底100上的第一电极薄膜进行图案化处理以形成第一电极图案102，该第一电极图案102由多个条形的第一电极1021组成。
例如，构图工艺为光刻构图工艺，其例如包括：在需要被构图的结构层上涂覆光刻胶层，使用掩模板对光刻胶层进行曝光，对曝光的光刻胶层进行显影以得到光刻胶图案，使用光刻胶图案对结构层进行蚀刻，然后可选地去除光刻胶图案。
如图6c所示，在形成有第一电极图案102的衬底100上形成绝缘层101，其中，第一电极图案102所包括的第一电极1021突出于绝缘层101上以形成台阶。绝缘层101在形成过程中，其会包裹第一电极图案102的周边，在第一电极图案102的第一电极1021与绝缘层101接触的位置会形成微小的陡坡。
绝缘层将第一电极间隔开，并且第一电极图案和绝缘层的形成顺序可以颠倒，例如，可以在衬底上形成一层绝缘层，然后在该绝缘层上沉积一层第一电极薄膜，并对该第一电极薄膜进行构图工艺以形成第一电极图案。
如图6D所示，在第一电极图案102和绝缘层101上形成一层抗氧化导电薄膜103，因第一电极图案102所包括的第一电极1021与绝缘层101 之间形成的台阶结构，抗氧化导电薄膜103在台阶处断开不连续，且因为第一电极图案102所包括的第一电极1021与绝缘层101接触位置处的微小陡坡，并且由于所形成的抗氧化导电薄膜103的厚度薄，使得形成的抗氧化导电薄膜103与第一电极图案102所包括的第一电极1021之间并不接触，即陡坡会使形成在绝缘层上的抗氧化导电薄膜103不与其相邻的第一电极1021电联通，所以第一电极图案102之间的相邻第一电极1021并不会因抗氧化导电薄膜103连通而短路。
形成抗氧化导电薄膜103的方法例如为热蒸镀，例如通过引入强电场，首先使得要被热蒸镀的材料带上电荷，再通过加热蒸发，使这些带电的材料分子或者粒子飞出并在电磁场的调控下精确飞向衬底，从而在形成有第一电极图案与绝缘层的衬底上形成抗氧化导电薄膜。
例如，在本实施例的有机发光二极管阵列基板的制备过程中，形成的抗氧化导电薄膜103的厚度可以为
Figure PCTCN2017090685-appb-000007
例如，在本实施例有机发光二极管阵列基板的制备过程中，第一电极图案102所包括的第一电极1021与绝缘层101之间的高度差要大于抗氧化导电薄膜103的厚度，优选显著大于抗氧化导电薄膜103的厚度，例如两者间的高度差可以大于
Figure PCTCN2017090685-appb-000008
例如，在本实施例的有机发光二极管阵列基板的制备过程中，制备抗氧化导电薄膜103的材料包括金、银、铜、锌、铬等或它们的合金、或导电氧化材料中的至少一种或者组合。该导电氧化材料例如可以为氧化铟锡(ITO)、铟镓锌氧化物(IGZO)等。
例如，在本公开实施例提供的制备方法中，通过例如热蒸镀形成抗氧化导电薄膜的过程中，热蒸镀的方向与衬底的夹角为锐角。蒸镀过程中，由于第一电极图案突出于绝缘层之上，而热蒸镀方向与衬底有夹角且为锐角，则第一电极图案会遮挡部分抗氧化导电薄膜形成在绝缘层上，即在该被遮挡处，抗氧化导电薄膜与第一电极图案的电极是断开的，从而保证第一电极图案的相邻电极之间不会通过抗氧化导电薄膜连通。
例如，在实施例的有机发光二极管阵列基板的制备过程中，第一电极1021的至少一个侧面形成有底切结构。当第一电极1021的一个侧边为底切结构时，在该侧边处，当热蒸镀的方向例如垂直于衬底时，在垂向上部分绝缘层会被该侧边遮挡，在被遮挡区域不能形成抗氧化导电薄膜，即抗 氧化导电薄膜与第一电极图案中相邻电极的至少一个是断开的，从而保证第一电极图案所包括的相邻第一电极1021之间不会通过抗氧化导电薄膜连通。
在形成抗氧化导电薄膜之后，在其上形成有机发光器件(图中未示出)中除第一电极之外的其它部分结构，包括例如空穴注入层、空穴传输层、有机发光层、电子传输层、电子注入层和第二电极，当第一电极图案作为阴极时，该有机发光器件的制备过程如图6e～6j所示。
如图6e所示，在抗氧化导电薄膜103上形成一层电子注入层薄膜，并对其进行构图工艺处理以形成电子注入层1041。
制备电子注入层的材料包括氟化锂、氧化锂、氧化锂硼、硅氧化钾、碳酸铯、8-羟基喹啉铝-锂等。
如图6f所示，在电子注入层1041上形成一层电子传输层薄膜，并对其进行构图工艺处理以形成电子传输层1042。
制备电子传输层的材料包括噁唑衍生物、金属螯合物、唑类化合物、喹啉衍生物、喔啉衍生物、二氮蒽衍生物、含硅的杂环衍生物等。
如图6g所示，在电子传输层1042上形成一层有机发光层薄膜，例如可以使用蒸镀掩模板以形成有机发光层1043。
制备有机发光层的材料包括8-羟基喹啉铝、8-羟基喹啉铝、蒽的衍生物等，可以需要选择相应的有机发光材料，本公开的实施例不限于这些具体的材料选择。
如图6h所示，在有机发光层1043上形成一层空穴传输层薄膜，并对其进行构图工艺处理以形成空穴传输层1044。
制备空穴传输层的材料包括聚对苯撑乙烯类、聚噻吩类、聚硅烷类、三苯甲烷类、三芳胺类、腙类、吡唑啉类、嚼唑类、咔唑类、丁二烯类等。
如图6i所示，在空穴传输层1044上形成一层空穴注入层薄膜，并对其进行构图工艺处理以形成空穴注入层1045。
制备空穴注入层的材料包括酞氰铜、三氧化钼、1-TNATA、2-TNATA、聚苯胺、PEDOT(3,4-乙烯二氧噻吩单体的聚合物)等。
如图6j所示，在空穴注入层1045上形成一层第二电极薄膜，并可以对其进行构图工艺处理以形成第二电极1046。
有机发光器件中各层(例如空穴注入层、空穴传输层、有机发光层等) 结构的制备不局限于在形成各层薄膜之后对其构图工艺处理，还可以为，例如在形成有抗氧化导电薄膜的衬底上形成一层像素界定层，该像素界定层所限定的凹槽对应于像素电极所处位置，在该像素界定层所限定的凹槽内依次形成有机发光器件中所包含的位于抗氧化导电薄膜之上的各层部件。
第一电极图案102为阳极(相当于第一电极1021为阳极)时，其有机发光器件中所包含的位于抗氧化导电薄膜之上的的各层结构的制备过程与上述6e～6i的制备工艺过程为相反，即在第一电极图案上依次形成空穴注入层、空穴传输层、有机发光层、电子传输层、电子注入层和第二电极。
第一电极图案与第二电极可互为阳极和阴极，其中，制备阳极的材料包括金属铝和导电氧化物(例如ITO、IGZO)等中任意一种，制备阴极的材料包括金属钾、锂、钙、镁、铟或镁铝合金、镁银合金、锂铝合金中的任意一种。
上述实施例中的有机发光器件的形成不限于只包括第一电极、空穴注入层、空穴传输层、有机发光层、电子传输层、电子注入层和第二电极中的至少一个，也可以在第一电极图案上形成一个完整的有机发光器件，例如依次形成阴极、有机发光层、阳极的结构，或者依次形成阳极、有机发光层、阴极的结构，该有机发光器件还可以包括空穴注入层、空穴传输层、有机发光层、电子传输层、电子注入层等，这些功能层根据具体结构依次排序设置。
本公开的实施例提供一种有机发光二极管阵列基板及其制备方法、显示装置，并且具有以下至少一项有益效果：
(1)本公开至少一个实施例提供一种有机发光二极管阵列基板，其中，在形成有第一电极图案和绝缘层的表面上形成一层抗氧化导电薄膜，从而避免第一电图案所包括的第一电极因局部微氧化造成注入到所形成的有机发光器件中的载流子分布不均匀的问题，提升有机发光二极管阵列基板发光的均匀性和良率。
(2)在本公开至少一个实施例中，第一电极突出于绝缘层之上以在两者之间形成台阶，使得形成抗氧化导电薄膜时，抗氧化导电薄膜即在台阶处断开，并不需要后续工艺例如光刻工艺进行处理，简化了制作抗氧化导电薄膜的制备工艺。
对于本公开，还有以下几点需要说明：
(1)本公开实施例附图只涉及到与本公开实施例涉及到的结构，其他结构可参考通常设计。
(2)为了清晰起见，在用于描述本公开的实施例的附图中，层或区域的厚度被放大或缩小，即这些附图并非按照实际的比例绘制。
(3)在不冲突的情况下，本公开的实施例及实施例中的特征可以相互组合以得到新的实施例。
以上所述，仅为本公开的具体实施方式，但本公开的保护范围并不局限于此，本公开的保护范围应以所述权利要求的保护范围为准。
本申请要求于2016年11月11日递交的中国专利申请第201610995313.4号的优先权，在此全文引用上述中国专利申请公开的内容以作为本申请的一部分。

Claims (18)

  1. 一种有机发光二极管阵列基板，包括：
    衬底；
    设置于所述衬底上的第一电极图案和绝缘层，其中，所述第一电极图案包括多个条形的第一电极，所述第一电极突出于所述绝缘层并在二者之间形成台阶；
    设置于所述第一电极图案和所述绝缘层上的抗氧化导电薄膜，其中，所述抗氧化导电薄膜在所述第一电极与所述绝缘层的所述台阶处断开。
  2. 根据权利要求1所述的有机发光二极管阵列基板，其中，相邻的所述第一电极之间由所述绝缘层间隔开。
  3. 根据权利要求1或2所述的有机发光二极管阵列基板，其中，在垂直于所述衬底所在面的方向上，所述第一电极与所述绝缘层之间的高度差大于所述抗氧化导电薄膜的厚度。
  4. 根据权利要求1-3任一项所述的有机发光二极管阵列基板，其中，所述第一电极与所述绝缘层之间的高度差大于
    Figure PCTCN2017090685-appb-100001
  5. 根据权利要求1-4任一项所述的有机发光二极管阵列基板，其中，所述抗氧化导电薄膜的厚度为
    Figure PCTCN2017090685-appb-100002
  6. 根据权利要求1-5任一项所述的有机发光二极管阵列基板，还包括设置于所述抗氧化导电薄膜上的有机发光层和第二电极。
  7. 根据权利要求1-6任一项所述的有机发光二极管阵列基板，其中，所述抗氧化导电薄膜的抗氧化性大于所述第一电极图案的抗氧化性。
  8. 根据权利要求1-7任一项所述的有机发光二极管阵列基板，其中，所述抗氧化导电薄膜的材料包括金、银、铜、锌、铬及其合金和导电氧化材料中的至少一种。
  9. 根据权利要求1-8任一项所述的有机发光二极管阵列基板，其中，所述衬底包括硅晶片、绝缘体上硅衬底或玻璃衬底。
  10. 根据权利要求1-9任一所述的有机发光二极管阵列基板，其中，所述第一电极的垂直于所述衬底的截面包括矩形、倒梯形、平行四边形中的至少一种。
  11. 一种显示装置，包括权利要求1-10中任一项所述的有机发光二极 管阵列基板。
  12. 一种有机发光二极管阵列基板的制备方法，包括：
    提供衬底；
    在所述衬底上形成第一电极图案和绝缘层，其中，所述第一电极图案包括多个条形的第一电极，所述第一电极突出于所述绝缘层并在二者之间形成台阶；
    在所述第一电极图案和所述绝缘层上形成抗氧化导电薄膜，其中，所述抗氧化导电薄膜在所述第一电极与所述绝缘层的台阶处断开。
  13. 根据权利要求12所述的制备方法，其中，相邻的所述第一电极之间由所述绝缘层间隔开。
  14. 根据权利要求12或13所述的制备方法，还包括在所述抗氧化导电薄膜上形成有机发光层和第二电极。
  15. 根据权利要求12-14任一项所述的制备方法，其中，所述第一电极与所述绝缘层之间的高度差大于
    Figure PCTCN2017090685-appb-100003
  16. 根据权利要求12-15任一项所述的制备方法，其中，所述抗氧化导电薄膜的厚度为
    Figure PCTCN2017090685-appb-100004
  17. 根据权利要求12-16任一所述的制备方法，其中，形成所述抗氧化导电薄膜的方法包括热蒸镀。
  18. 根据权利要求17所述的制备方法，其中，所述热蒸镀的方向与所述衬底的夹角为锐角。
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