WO2018086194A1 - 用于打印oled显示器件的凹槽结构及oled显示器件的制作方法 - Google Patents

用于打印oled显示器件的凹槽结构及oled显示器件的制作方法 Download PDF

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WO2018086194A1
WO2018086194A1 PCT/CN2016/110736 CN2016110736W WO2018086194A1 WO 2018086194 A1 WO2018086194 A1 WO 2018086194A1 CN 2016110736 W CN2016110736 W CN 2016110736W WO 2018086194 A1 WO2018086194 A1 WO 2018086194A1
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layer
groove
dam
branch
ink
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French (fr)
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刘亚伟
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TCL China Star Optoelectronics Technology Co Ltd
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Shenzhen China Star Optoelectronics Technology Co Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/17—Passive-matrix OLED displays
    • H10K59/173—Passive-matrix OLED displays comprising banks or shadow masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/81—Anodes
    • H10K50/813—Anodes characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H10K71/164—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using vacuum deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/60—Forming conductive regions or layers, e.g. electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/10—Transparent electrodes, e.g. using graphene
    • H10K2102/101—Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO]
    • H10K2102/103—Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO] comprising indium oxides, e.g. ITO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/351—Thickness
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/14—Carrier transporting layers
    • H10K50/15—Hole transporting layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/14—Carrier transporting layers
    • H10K50/16—Electron transporting layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/17—Carrier injection layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/17—Carrier injection layers
    • H10K50/171—Electron injection layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
    • H10K71/13—Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing

Definitions

  • the present invention relates to the field of display technologies, and in particular, to a recess structure for printing an OLED display device and a method of fabricating the OLED display device.
  • OLED Organic Light Emitting Display
  • OLED Organic Light Emitting Display
  • a large-area full-color display and many other advantages have been recognized by the industry as the most promising display device.
  • the structure of an OLED display device generally includes a substrate, an anode disposed on the substrate, a cathode disposed on the anode, and an organic functional layer sandwiched between the anode and the cathode.
  • the organic functional layer generally includes a Hole Injection Layer (HIL), a Hole Transport Layer (HTL), an Emissive Layer (EML), and an Electroinjection Layer (EIL). ), and the electron transport layer (Electron Transport Layer, ETL).
  • HIL Hole Injection Layer
  • HTL Hole Transport Layer
  • EML Emissive Layer
  • EIL Electroinjection Layer
  • ETL Electroinjection Layer
  • the OLED display device is generally fabricated by first forming an anode on a substrate, and sequentially forming an organic functional layer and a cathode on the anode, wherein the cathode and anode materials are usually made of indium tin oxide (ITO).
  • the organic functional layer is usually prepared by two methods, a vacuum thermal evaporation and a solution process.
  • the so-called solution film formation is to process the required materials, such as fine particles dispersed into nanometers, and then dissolve them in the corresponding solution to form ink, and then apply the film forming device to deposit the ink on the surface of the substrate, with solvent evaporation,
  • the desired film can be formed on the surface of the substrate.
  • the specific manner of film formation can be further subdivided into Ink-jet Printing, Nozzle Printing, Roller Printing, Spin Coating, and the like.
  • a groove is usually formed to restrict the ink, and after drying and baking, the ink shrinks to form a film within a range limited by the groove.
  • the groove 120 is surrounded by a dam 110 disposed on the periphery of the substrate 100 and the ITO anode 130.
  • the ink injection layer 140 and the hole transport layer 150 are formed by depositing ink in the groove 120.
  • hair Light functional layer 160 Referring to FIG.
  • the hydrophilicity of the different inks is different, the hydrophilicity of the ink is higher on the inclined inner peripheral surface of the dam 110, and the conductivity of the lowermost hole injection layer is usually The best among the organic functional layers, when the lowermost hole injection layer ink climbs higher, it causes leakage of the thin film at the edge of the hole injection layer, resulting in a decrease in the quality of the OLED display device.
  • Another object of the present invention is to provide a method for fabricating an OLED display device, which can prevent leakage of the edge of the hole injection layer of the OLED display device and improve the quality of the OLED display device.
  • the present invention provides a groove structure for printing an OLED display device, the groove structure being located on a substrate, including a dam, and a groove surrounded by the dam;
  • the dam includes: a first branch dam layer; and a second branch dam layer stacked on the first branch dam layer;
  • the inclined inner circumferential surface of the first branch dam layer surrounding the groove forms a contact angle with the hole injection layer ink of the OLED display device, and the second branch dam layer is surrounded by the groove.
  • the inclined inner peripheral surface forms a contact angle with the hole injection layer ink of the OLED display device in a range of 30° to 60°
  • the second branch bank layer surrounds the inclined inner peripheral surface of the groove and the hole transport of the OLED display device
  • the layer ink and the light-emitting functional layer ink form a contact angle ranging from 10° to 45°.
  • An anode is disposed on the substrate, and the dam surrounding the groove is disposed on a peripheral edge of the anode and the substrate.
  • the height difference between the upper surface of the first branch dam layer and the anode ranges from 50 nm to 800 nm, and the thickness of the dam is less than 3 microns.
  • the material of the anode is ITO.
  • the angle between the inclined inner peripheral surface of the dam surrounding the groove and the substrate is 30° to 60°, and the width of the groove gradually increases from the bottom to the top.
  • the invention also provides a method for fabricating an OLED display device, comprising the following steps:
  • Step 1 Providing a substrate, a material of the first branch dam layer, and a material of the second branch dam layer;
  • Step 2 forming an anode on the substrate, and sequentially forming a first branch dam layer stacked on the substrate by using a coating, drying, and etching process using the material of the first branch dam layer and the material of the second branch dam layer a second branch dam layer forming a dam disposed on a peripheral edge of the anode and a substrate, the dam surrounding the groove;
  • Step 3 providing a hole injection layer ink, dropping a hole injection layer ink into the groove, and a contact angle of the hole injection layer ink and the inclined inner peripheral surface of the first branch bank layer surrounding the groove
  • the range of the contact angle between the ink of the hole injection layer and the inclined inner circumferential surface of the second branch dam layer is 30° to 60°, and is formed after drying and baking.
  • Step 4 providing a hole transport layer ink, dropping the hole transport layer ink into the groove, and forming a contact angle between the hole transport layer ink and the inclined inner peripheral surface of the second branch bank layer surrounding the groove a range of 10 ° to 45 °, after drying and baking, forming a hole transport layer laminated on the hole injection layer;
  • Step 5 providing a light-emitting function layer ink, dropping the light-emitting function layer ink into the groove, and the contact angle of the light-emitting function layer ink and the inclined inner peripheral surface of the second branch bank layer surrounding the groove is 10 ° ⁇ 45°, after drying and baking, forming a light-emitting functional layer laminated on the hole transport layer;
  • Step 6 sequentially forming an electron transport layer, an electron injection layer, and a cathode on the light-emitting functional layer.
  • the material of the anode and the cathode is ITO.
  • the height difference between the upper surface of the first branch dam layer and the anode ranges from 50 nm to 800 nm, and the thickness of the dam is less than 3 ⁇ m.
  • the electron transport layer and the electron injection layer are formed by vacuum evaporation.
  • the angle between the inclined inner peripheral surface of the dam surrounding the groove and the substrate is 30° to 60°, and the width of the groove gradually increases from the bottom to the top.
  • the invention also provides a method for fabricating an OLED display device, comprising the following steps:
  • Step 1 Providing a substrate, a material of the first branch dam layer, and a material of the second branch dam layer;
  • Step 2 forming an anode on the substrate, and sequentially forming a first branch dam layer stacked on the substrate by using a coating, drying, and etching process using the material of the first branch dam layer and the material of the second branch dam layer a second branch dam layer forming a dam disposed on a peripheral edge of the anode and a substrate, the dam surrounding the groove;
  • Step 3 providing a hole injection layer ink, dropping a hole injection layer ink into the groove, and a contact angle of the hole injection layer ink and the inclined inner peripheral surface of the first branch bank layer surrounding the groove
  • the range of the contact angle between the ink of the hole injection layer and the inclined inner circumferential surface of the second branch dam layer is 30° to 60°, and is formed after drying and baking.
  • Step 4 providing a hole transport layer ink, dropping the hole transport layer ink into the groove, and forming a contact angle between the hole transport layer ink and the inclined inner peripheral surface of the second branch bank layer surrounding the groove
  • the range is from 10° to 45°, and the hole is laminated on the hole injection layer after drying and baking.
  • Step 5 providing a light-emitting function layer ink, dropping the light-emitting function layer ink into the groove, and the contact angle of the light-emitting function layer ink and the inclined inner peripheral surface of the second branch bank layer surrounding the groove is 10 ° ⁇ 45°, after drying and baking, forming a light-emitting functional layer laminated on the hole transport layer;
  • Step 6 sequentially forming an electron transport layer, an electron injection layer, and a cathode on the light emitting function layer;
  • the material of the anode and the cathode are both ITO;
  • the method for fabricating the electron transport layer and the electron injection layer is vacuum evaporation.
  • the present invention provides a groove structure for printing an OLED display device by dividing a dam surrounded by a groove into a first branch dam layer and a second branch dam layer which are stacked and disposed
  • the inclined inner circumferential surface of the first branch dam layer surrounding the groove forms a contact angle with the hole injection layer ink in a range of 10° to 45°
  • the second branch dam layer surrounds the inclined inner circumferential surface of the groove and
  • the hole injection layer ink forms a contact angle in the range of 30° to 60°
  • the contact angle formed by the inclined inner peripheral surface of the second branch bank layer surrounded by the groove and the hole transport layer ink and the light-emitting function layer ink is 10° ⁇ 45°, thereby limiting the height of climbing up the hole injection layer, so that the upper surface of the formed hole injection layer is flat or slightly convex in the middle, which can prevent leakage of the edge of the hole injection layer, and improve the OLED display device. quality.
  • the invention also provides a manufacturing method of the OLED display
  • FIG. 1 is a schematic structural view of an existing OLED display device for preparing an organic functional layer by a film forming method
  • FIG. 2 is a schematic view showing the relationship between the ink of the hole injection layer and the groove when the ink of the hole injection layer climbs too high on the inclined inner circumferential surface of the bank surrounding the groove in the conventional film forming method;
  • FIG. 3 is a schematic structural view of a groove structure for printing an OLED display device of the present invention and a schematic diagram of step 2 of the method for fabricating the OLED display device of the present invention
  • FIG. 5 is a flow chart of a method of fabricating an OLED display device of the present invention.
  • the present invention provides a groove structure for printing an OLED display device, the groove structure is located on the substrate 1, including a dam 2, and a groove 3 surrounded by the dam 2;
  • the dam 2 includes: a first branch dam layer 21, and a second branch dam layer 22 laminated on the first branch dam layer 21;
  • the first branch dam layer 21 is surrounded by the inclined inner peripheral surface of the groove 3 and forms a contact angle with the hole injection layer ink of the OLED display device in a range of 10° to 45°
  • the second branch dam layer 22 is surrounded by The inclined inner peripheral surface of the groove 3 forms a contact angle with the hole injection layer ink of the OLED display device in a range of 30° to 60°
  • the second branch bank layer 22 surrounds the inclined inner peripheral surface of the groove 3 and the OLED.
  • the hole transport layer ink of the display device and the light-emitting functional layer ink form a contact angle ranging from 10° to 45°.
  • the substrate 1 is provided with an anode 11 , and the bank 2 surrounding the groove 3 is disposed on the peripheral edge of the anode 11 and the substrate 1 .
  • the material of the anode 11 may be indium oxide.
  • ITO Indium Tin Oxides
  • the substrate 1 is a transparent substrate, preferably a glass substrate.
  • the height difference between the upper surface of the first branch dam layer 21 and the anode 11 ranges from 50 nm to 800 nm, and the thickness of the dam 2 is less than 3 ⁇ m.
  • the angle between the inclined inner peripheral surface of the dam 2 and the substrate 1 is 30° to 60°, and the width of the groove 3 gradually increases from the bottom to the top.
  • the function of the groove structure is to limit the flow of the ink, so that the ink is accommodated in the groove. After drying and baking, the ink shrinks to form a film within the limit of the groove, thereby completing the printing.
  • the film process in the process of printing an OLED display device, it is required to form a hole injection layer, a hole transport layer, and a light-emitting functional layer which are stacked from bottom to top, wherein the hole injection layer has the strongest conductivity and is flat.
  • the invention is relatively high, and the present invention divides the dam surrounded by the groove 3 into two stacked first branch dam layers 21 and second branch dam layers 22, wherein the first branch dam layer 21 and the hole injection layer ink It is hydrophobic, specifically, the inclined inner peripheral surface of the first branch dam layer 21 surrounded by the groove 3 forms a contact angle with the hole injection layer ink in a range of 10° to 45°, and the second branch dam layer 22
  • the ink is weakly hydrophobic with the hole injection layer, and specifically, the contact angle of the inclined inner peripheral surface of the second branch bank layer surrounded by the groove and the hole injection layer ink ranges from 30° to 60°, thereby printing Hole injection by film formation Relatively smooth surface on the film, or the surface is high in the middle, surrounded by low form, and a second branch bank layer 22 to the hole transport layer ink
  • the water and the luminescent functional layer ink are suitably hydrophilic, in particular, the second branch dam layer 22 is surrounded by the inclined inner peripheral surface of the groove 3 to
  • the angle range is from 10° to 45°, so that the hole transport layer and the light-emitting functional layer prepared by the film formation are thin in the middle and thick in the periphery, thereby avoiding the ink in the inclined inner periphery of the groove 2 due to the hole injection layer.
  • the position of the surface contact climbs too high, causing leakage at the edge of the hole injection layer, improving the quality of the OLED display device.
  • first branch dam layer 21 and the second branch dam layer 22 are formed by selecting different materials, so that the contact angles of the first branch dam layer 21 and the second branch dam layer 22 with the corresponding ink are reached.
  • the requirements of the present invention are not limited to those materials, so that the contact angles of the first branch dam layer 21 and the second branch dam layer 22 with the corresponding ink are reached.
  • the present invention provides a method for fabricating an OLED display device, comprising the following steps:
  • Step 1 Providing a substrate 1, a first branch dam layer material, and a second branch dam layer material.
  • the substrate 1 is a transparent substrate, preferably a glass substrate, and the first branch dam layer material and the second branch dam layer material have different affinity/hydrophobic properties.
  • Step 2 referring to FIG. 3, an anode 11 is formed on the substrate 1, and the first branch dam layer material and the second branch dam layer material are sequentially laminated on the substrate 1 by coating, drying, and etching processes.
  • the first branch dam layer 21 and the second branch dam layer 22 are disposed to form a dam 2 disposed on the peripheral edge of the anode 11 and on the substrate 1, and the dam 2 is surrounded by the groove 3.
  • the material of the anode 11 is ITO, and the angle between the inclined inner peripheral surface of the bank 2 and the substrate 1 is 30° to 60°, and the width of the groove 3 is from below. Gradually increase upwards.
  • Step 3 referring to FIG. 4, a hole injection layer ink is provided, and a hole injection layer ink is dropped into the groove 3.
  • the hole injection layer ink and the first branch bank layer 21 are surrounded by the groove 3.
  • the contact angle formed by the inclined inner peripheral surface ranges from 10° to 45°, and the contact angle between the hole injection layer ink and the inclined inner peripheral surface of the second branch bank layer 22 which is surrounded by the groove 3 is 30°. ⁇ 60°, the hole injection layer 4 is formed after drying and baking.
  • the upper surface of the hole injection layer 4 prepared by the film formation can be made flat, or the upper surface is high in the middle and low in the periphery.
  • the contact angle between the hole injecting layer ink and the inclined inner peripheral surface of the first branch bank layer 21 to form the groove 3 is 30° to 60°, so that the subsequently formed hole injecting layer 4 can be formed.
  • the upper surface is a flat surface.
  • Step 4 referring to FIG. 4, a hole transport layer ink is provided, and a hole transport layer ink is dropped into the groove 3.
  • the hole transport layer ink and the second branch bank layer 22 are surrounded by the groove 3.
  • the inclined inner peripheral surface forms a contact angle ranging from 10° to 45°, and is formed by lamination on the hole after drying and baking.
  • the hole transport layer 5 is introduced into the layer 4.
  • the hole transport layer 5 produced by the film formation can be made thin in the middle and thick in the periphery.
  • Step 5 referring to FIG. 4, a light-emitting function layer ink is provided, and the light-emitting function layer ink is dropped into the groove 3, and the light-emitting function layer ink and the second branch bank layer 22 are surrounded by the inclined inner circumference of the groove 3.
  • the contact angle formed by the surface is in the range of 10 to 45, and after drying and baking, the light-emitting function layer 6 laminated on the hole transport layer 5 is formed.
  • the light-emitting function layer 6 produced by the film formation can be made thin in the middle and thick in the periphery, and the form of the hole transport layer 5 can be matched and empty.
  • the shape of the hole injection layer 4 can prevent the edge of the hole transport layer 4 from leaking.
  • Step 6 An electron transport layer (not shown), an electron injection layer (not shown), and a cathode (not shown) are sequentially formed on the light-emitting function layer 6.
  • the method for fabricating the electron transport layer and the electron injection layer may be vacuum evaporation.
  • the material of the cathode is also ITO.
  • the present invention provides a groove structure for printing an OLED display device, by dividing a bank surrounded by a groove into a first branch dam layer and a second branch bank layer stacked in a stack,
  • the inclined inner peripheral surface of the first branch dam layer surrounding the groove forms a contact angle with the hole injection layer ink in a range of 10° to 45°
  • the second branch dam layer surrounds the inclined inner peripheral surface of the groove and is empty
  • the contact angle formed by the ink of the hole injection layer ranges from 30° to 60°
  • the contact angle formed by the inclined inner circumferential surface of the second branch dam layer surrounding the groove and the ink of the hole transport layer and the light-emitting function layer is 10 ° ⁇ 45°, thereby limiting the height of the hole in the upper portion of the hole injection layer, so that the upper surface of the formed hole injection layer is flat or slightly raised in the middle, which can prevent leakage of the edge of the hole injection layer and improve the quality of the OLED display device.
  • the invention also provides a method for fabricating

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Abstract

一种用于打印OLED显示器件的凹槽结构及OLED显示器件的制作方法，通过将围拢成凹槽（3）的堤坝（2）划分为层叠设置的第一分支堤坝层（21）、及第二分支堤坝层（22），第一分支堤坝层围拢成凹槽的倾斜内周面与空穴注入层墨水形成的接触角范围为10°～45°，第二分支堤坝层围拢成凹槽的倾斜内周面与空穴注入层墨水形成的接触角范围为30°～60°，第二分支堤坝层围拢成凹槽的倾斜内周面与空穴传输层墨水及发光功能层墨水形成的接触角范围为10°～45°，从而限制空穴注入层（4）四周向上攀爬的高度，使形成的空穴注入层的上表面平整或中间略微凸起，能够防止空穴注入层边缘漏电，提升OLED显示器件的品质。

Description

用于打印OLED显示器件的凹槽结构及OLED显示器件的制作方法 技术领域
本发明涉及显示技术领域，尤其涉及一种用于打印OLED显示器件的凹槽结构及OLED显示器件的制作方法。
背景技术
有机发光二极管(Organic Light Emitting Display，OLED)显示器件具有自发光、驱动电压低、发光效率高、响应时间短、清晰度与对比度高、近180°视角、使用温度范围宽，可实现柔性显示与大面积全色显示等诸多优点，被业界公认为是最有发展潜力的显示装置。
OLED显示器件的结构一般包括：基板、设于基板上的阳极、设于阳极上的阴极以及夹在阳极与阴极之间的有机功能层。其中有机功能层，一般包括空穴注入层(Hole Injection Layer，HIL)、空穴传输层(Hole Transport Layer，HTL)、发光功能层(Emissive Layer，EML)、电子注入层(Electron Injection Layer，EIL)、及电子传输层(Electron Transport Layer，ETL)。OLED显示器件的发光原理为半导体材料和有机发光材料在电场驱动下，通过载流子注入和复合导致发光。
OLED显示器件的制作方法通常为，先在基板上形成阳极，在该阳极上依次形成有机功能层及阴极，其中阴极与阳极的材料通常采用氧化铟锡(ITO)。有机功能层的制备方式通常包括真空热蒸镀(Vacuum Thermal Evaporation)与溶液成膜(Solution Process)两种。
所谓溶液成膜即是把所需材料经过处理，比如分散成纳米级的微小颗粒，然后溶解在相应的溶液中形成墨水，再应用成膜设备将该墨水沉积在基板表面，带溶剂挥发后，即可在基板表面形成所需薄膜。成膜的具体方式又可以细分为喷墨打印(Ink-jet Printing)、连续打印(Nozzle Printing)、滚筒打印(Roller Printing)、旋转涂布(Spin Coating)等。
在应用于打印成膜工艺的基板上，通常会制作凹槽，用来限制住墨水，通过干燥烘烤后，墨水收缩在该凹槽限制的范围内形成薄膜。请参阅图1，所述凹槽120由设于基板100、及ITO阳极130四周边缘上的堤坝110围成，通过在凹槽120内沉积墨水，形成空穴注入层140、空穴传输层150、及发 光功能层160。请参阅图2，由于不同墨水的亲水性不同，对于亲水性较好的墨水，会在堤坝110的倾斜内周面上爬坡较高，通常最下层的空穴注入层的导电性是各有机功能层中最好的，当最下层的空穴注入层墨水爬坡较高时，会导致空穴注入层边缘薄膜较薄的地方产生漏电，导致OLED显示器件的品质下降。
发明内容
本发明的目的在于提供一种用于打印OLED显示器件的凹槽结构，能够防止OLED显示器件的空穴注入层边缘漏电，提升OLED显示器件的品质。
本发明的目的还在于提供一种OLED显示器件的制作方法，能够防止OLED显示器件的空穴注入层边缘漏电，提升OLED显示器件的品质。
为实现上述目的，本发明提供了一种用于打印OLED显示器件的凹槽结构，该凹槽结构位于基板上，包括堤坝、及由堤坝围拢成的凹槽；
所述堤坝包括：第一分支堤坝层、及层叠于所述第一分支堤坝层上的第二分支堤坝层；
所述第一分支堤坝层围拢成凹槽的倾斜内周面与OLED显示器件的空穴注入层墨水形成的接触角范围为10°～45°，所述第二分支堤坝层围拢成凹槽的倾斜内周面与OLED显示器件的空穴注入层墨水形成的接触角范围为30°～60°，所述第二分支堤坝层围拢成凹槽的倾斜内周面与OLED显示器件的空穴传输层墨水及发光功能层墨水形成的接触角范围为10°～45°。
所述基板上设有阳极，所述围拢成凹槽的堤坝设于所述阳极的四周边缘及基板上。
所述第一分支堤坝层的上表面与阳极之间的高度差范围为50nm～800nm，所述堤坝的厚度小于3微米。
所述阳极的材料为ITO。
所述堤坝围拢成凹槽的倾斜内周面与基板之间的夹角为30°～60°，所述凹槽的宽度自下往上逐渐增大。
本发明还提供一种OLED显示器件的制作方法，包括如下步骤：
步骤1、提供一基板、第一分支堤坝层材料及第二分支堤坝层材料；
步骤2、在所述基板上制作阳极，使用所述第一分支堤坝层材料及第二分支堤坝层材料通过涂布、干燥、及蚀刻工艺在基板上依次制作层叠设置的第一分支堤坝层及第二分支堤坝层，形成设于所述阳极的四周边缘及基板上的堤坝，所述堤坝围拢成凹槽；
步骤3、提供空穴注入层墨水，将空穴注入层墨水滴入凹槽内，所述空穴注入层墨水与所述第一分支堤坝层围拢成凹槽的倾斜内周面形成的接触角范围为10°～45°，所述空穴注入层墨水与所述第二分支堤坝层围拢成凹槽的倾斜内周面形成的接触角范围为30°～60°，干燥烘烤后形成空穴注入层；
步骤4、提供空穴传输层墨水，将空穴传输层墨水滴入凹槽内，所述空穴传输层墨水与所述第二分支堤坝层围拢成凹槽的倾斜内周面形成的接触角范围为10°～45°，干燥烘烤后形成层叠于所述空穴注入层上的空穴传输层；
步骤5、提供发光功能层墨水，将发光功能层墨水滴入凹槽内，所述发光功能层墨水与所述第二分支堤坝层围拢成凹槽的倾斜内周面形成的接触角范围为10°～45°，干燥烘烤后形成层叠于所述空穴传输层上的发光功能层；
步骤6、在所述发光功能层上依次制作电子传输层、电子注入层、及阴极。
所述阳极与阴极的材料均为ITO。
所述步骤2中，第一分支堤坝层的上表面与阳极之间的高度差范围为50nm～800nm，所述堤坝的厚度小于3μm。
所述电子传输层及电子注入层的制作方法为真空蒸镀。
所述步骤2中堤坝围拢成凹槽的倾斜内周面与基板之间的夹角为30°～60°，所述凹槽的宽度自下往上逐渐增大。
本发明还提供一种OLED显示器件的制作方法，包括如下步骤：
步骤1、提供一基板、第一分支堤坝层材料及第二分支堤坝层材料；
步骤2、在所述基板上制作阳极，使用所述第一分支堤坝层材料及第二分支堤坝层材料通过涂布、干燥、及蚀刻工艺在基板上依次制作层叠设置的第一分支堤坝层及第二分支堤坝层，形成设于所述阳极的四周边缘及基板上的堤坝，所述堤坝围拢成凹槽；
步骤3、提供空穴注入层墨水，将空穴注入层墨水滴入凹槽内，所述空穴注入层墨水与所述第一分支堤坝层围拢成凹槽的倾斜内周面形成的接触角范围为10°～45°，所述空穴注入层墨水与所述第二分支堤坝层围拢成凹槽的倾斜内周面形成的接触角范围为30°～60°，干燥烘烤后形成空穴注入层；
步骤4、提供空穴传输层墨水，将空穴传输层墨水滴入凹槽内，所述空穴传输层墨水与所述第二分支堤坝层围拢成凹槽的倾斜内周面形成的接触角范围为10°～45°，干燥烘烤后形成层叠于所述空穴注入层上的空穴传 输层；
步骤5、提供发光功能层墨水，将发光功能层墨水滴入凹槽内，所述发光功能层墨水与所述第二分支堤坝层围拢成凹槽的倾斜内周面形成的接触角范围为10°～45°，干燥烘烤后形成层叠于所述空穴传输层上的发光功能层；
步骤6、在所述发光功能层上依次制作电子传输层、电子注入层、及阴极；
其中，所述阳极与阴极的材料均为ITO；
其中，所述电子传输层及电子注入层的制作方法为真空蒸镀。
本发明的有益效果：本发明提供了一种用于打印OLED显示器件的凹槽结构，通过将围拢成凹槽的堤坝划分为层叠设置的第一分支堤坝层、及第二分支堤坝层，所述第一分支堤坝层围拢成凹槽的倾斜内周面与空穴注入层墨水形成的接触角范围为10°～45°，所述第二分支堤坝层围拢成凹槽的倾斜内周面与空穴注入层墨水形成的接触角范围为30°～60°，所述第二分支堤坝层围拢成凹槽的倾斜内周面与空穴传输层墨水及发光功能层墨水形成的接触角范围为10°～45°，从而限制空穴注入层四周向上攀爬的高度，使形成的空穴注入层的上表面平整或中间略微凸起，能够防止空穴注入层边缘漏电，提升OLED显示器件的品质。本发明还提供一种OLED显示器件的制作方法，能够防止OLED显示器件的空穴注入层边缘漏电，提升OLED显示器件的品质。
附图说明
为了能更进一步了解本发明的特征以及技术内容，请参阅以下有关本发明的详细说明与附图，然而附图仅提供参考与说明用，并非用来对本发明加以限制。
附图中，
图1为现有的通过打印成膜方式制备有机功能层的OLED显示器件的结构示意图；
图2为现有的打印成膜方式中当空穴注入层墨水在围成凹槽的堤坝的倾斜内周面上爬升过高时，空穴注入层墨水与凹槽的关系示意图；
图3为本发明的用于打印OLED显示器件的凹槽结构的结构示意图暨本发明的OLED显示器件制作方法的步骤2的示意图；
图4为本发明的OLED显示器件制作方法的步骤3至步骤5的示意图；
图5为本发明的OLED显示器件制作方法的流程图。
具体实施方式
为更进一步阐述本发明所采取的技术手段及其效果，以下结合本发明的优选实施例及其附图进行详细描述。
请参阅图3，本发明提供一种用于打印OLED显示器件的凹槽结构，该凹槽结构位于基板1上，包括堤坝2、及由堤坝2围拢成的凹槽3；
所述堤坝2包括：第一分支堤坝层21、及层叠于所述第一分支堤坝层21上的第二分支堤坝层22；
所述第一分支堤坝层21围拢成凹槽3的倾斜内周面与OLED显示器件的空穴注入层墨水形成的接触角范围为10°～45°，所述第二分支堤坝层22围拢成凹槽3的倾斜内周面与OLED显示器件的空穴注入层墨水形成的接触角范围为30°～60°，所述第二分支堤坝层22围拢成凹槽3的倾斜内周面与OLED显示器件的空穴传输层墨水及发光功能层墨水形成的接触角范围为10°～45°。
具体地，所述基板1上设有阳极11，所述围拢成凹槽3的堤坝2设于所述阳极11的四周边缘及基板1上，优选地，所述阳极11的材料可以为氧化铟锡(Indium Tin Oxides，ITO)，所述基板1为透明基板，优选玻璃基板。
具体地，所述第一分支堤坝层21的上表面与阳极11之间的高度差范围为50nm～800nm，所述堤坝2的厚度小于3微米。
优选地，所述堤坝2围拢成凹槽3的倾斜内周面与基板1之间的夹角为30°～60°，所述凹槽3的宽度自下往上逐渐增大。
值得一提到是，所述凹槽结构的作用为限制墨水的流动，使墨水容置在槽内，通过干燥烘烤后，墨水收缩在该凹槽限制的范围内形成薄膜，从而完成打印成膜工艺，在打印OLED显示器件过程中，需要制作自下而上层叠设置的空穴注入层、空穴传输层、及发光功能层，其中空穴注入层的导电性最强，对平整性的要求较高，本发明通过将围拢成凹槽3的堤坝划2分为层叠设置的第一分支堤坝层21、及第二分支堤坝层22，其中第一分支堤坝层21与空穴注入层墨水呈疏水性，具体为所述第一分支堤坝层21围拢成凹槽3的倾斜内周面与空穴注入层墨水形成的接触角范围为10°～45°，所述第二分支堤坝层22与空穴注入层墨水呈弱疏水性，具体为所述第二分支堤坝层围拢成凹槽的倾斜内周面与空穴注入层墨水形成的接触角范围为30°～60°，从而使得打印成膜制得的空穴注入层的薄膜上表面较平整，或者上表面是中间高、四周低的形态，且第二分支堤坝层22对于空穴传输层墨 水及发光功能层墨水为适当亲水性，具体为所述第二分支堤坝层22围拢成凹槽3的倾斜内周面与OLED显示器件的空穴传输层墨水及发光功能层墨水形成的接触角范围为10°～45°，使得打印成膜制得的空穴传输层和发光功能层呈中间薄、四周厚的形态，进而避免因空穴注入层墨水在与凹槽2的倾斜内周面接触的位置爬升过高，导致空穴注入层边缘漏电，提升OLED显示器件的品质。
需要说明的是，通过选择不同的材料制作所述第一分支堤坝层21及第二分支堤坝层22，进而使得第一分支堤坝层21及第二分支堤坝层22与相应墨水形成的接触角达到本发明的要求。
请参阅图5，基于上述凹槽结构，本发明提供一种OLED显示器件的制作方法，包括如下步骤：
步骤1、提供一基板1、第一分支堤坝层材料及第二分支堤坝层材料。
具体地，所述基板1为透明基板，优选玻璃基板，所述第一分支堤坝层材料及第二分支堤坝层材料具有不同的亲/疏水性质。
步骤2、请参阅图3，在所述基板1上制作阳极11，使用所述第一分支堤坝层材料及第二分支堤坝层材料通过涂布、干燥、及蚀刻工艺在基板1上依次制作层叠设置的第一分支堤坝层21及第二分支堤坝层22，形成设于所述阳极11的四周边缘及基板1上的堤坝2，所述堤坝2围拢成凹槽3。
优选地，所述阳极11的材料为ITO，所述堤坝2围拢成凹槽3的倾斜内周面与基板1之间的夹角为30°～60°，所述凹槽3的宽度自下往上逐渐增大。
步骤3、请参阅图4，提供空穴注入层墨水，将空穴注入层墨水滴入凹槽3内，所述空穴注入层墨水与所述第一分支堤坝层21围拢成凹槽3的倾斜内周面形成的接触角范围为10°～45°，所述空穴注入层墨水与所述第二分支堤坝层22围拢成凹槽3的倾斜内周面形成的接触角范围为30°～60°，干燥烘烤后形成空穴注入层4。
具体地，通过控制空穴注入层墨水与堤坝2形成的接触角，可以使得打印成膜制得的空穴注入层4的上表面较平整，或者上表面是中间高、四周低的形态，优选地，所述空穴注入层墨水与所述第一分支堤坝层21围拢成凹槽3的倾斜内周面形成的接触角为30°～60°，可以使得后续形成的空穴注入层4的上表面为一平整表面。
步骤4、请参阅图4，提供空穴传输层墨水，将空穴传输层墨水滴入凹槽3内，所述空穴传输层墨水与所述第二分支堤坝层22围拢成凹槽3的倾斜内周面形成的接触角范围为10°～45°，干燥烘烤后形成层叠于所述空穴注 入层4上的空穴传输层5。
具体地，通过控制空穴传输层墨水与堤坝2形成的接触角，可以使得打印成膜制得的空穴传输层5呈中间薄、四周厚的形态。
步骤5、请参阅图4，提供发光功能层墨水，将发光功能层墨水滴入凹槽3内，所述发光功能层墨水与所述第二分支堤坝层22围拢成凹槽3的倾斜内周面形成的接触角范围为10°～45°，干燥烘烤后形成层叠于所述空穴传输层5上的发光功能层6。
具体地，通过控制发光功能层墨水与堤坝2形成的接触角，可以使得打印成膜制得的发光功能层6呈中间薄、四周厚的形态，配合上述空穴传输层5的形态、及空穴注入层4的形态，可以避免空穴传输层4的边缘漏电。
步骤6、在所述发光功能层6上依次制作电子传输层(未图示)、电子注入层(未图示)、及阴极(未图示)。
具体地，所述电子传输层及电子注入层的制作方法可以选择真空蒸镀，优选地，所述阴极的材料也为ITO。
综上所述，本发明提供了一种用于打印OLED显示器件的凹槽结构，通过将围拢成凹槽的堤坝划分为层叠设置的第一分支堤坝层、及第二分支堤坝层，所述第一分支堤坝层围拢成凹槽的倾斜内周面与空穴注入层墨水形成的接触角范围为10°～45°，所述第二分支堤坝层围拢成凹槽的倾斜内周面与空穴注入层墨水形成的接触角范围为30°～60°，所述第二分支堤坝层围拢成凹槽的倾斜内周面与空穴传输层墨水及发光功能层墨水形成的接触角范围为10°～45°，从而限制空穴注入层四周向上攀爬的高度，使形成的空穴注入层的上表面平整或中间略微凸起，能够防止空穴注入层边缘漏电，提升OLED显示器件的品质。本发明还提供一种OLED显示器件的制作方法能够防止OLED显示器件的空穴注入层边缘漏电，提升OLED显示器件的品质。
以上所述，对于本领域的普通技术人员来说，可以根据本发明的技术方案和技术构思作出其他各种相应的改变和变形，而所有这些改变和变形都应属于本发明权利要求的保护范围。

Claims (13)

  1. 一种用于打印OLED显示器件的凹槽结构，位于基板上，包括堤坝、及由堤坝围拢成的凹槽；
    所述堤坝包括：第一分支堤坝层、及层叠于所述第一分支堤坝层上的第二分支堤坝层；
    所述第一分支堤坝层围拢成凹槽的倾斜内周面与OLED显示器件的空穴注入层墨水形成的接触角范围为10°～45°，所述第二分支堤坝层围拢成凹槽的倾斜内周面与OLED显示器件的空穴注入层墨水形成的接触角范围为30°～60°，所述第二分支堤坝层围拢成凹槽的倾斜内周面与OLED显示器件的空穴传输层墨水及发光功能层墨水形成的接触角范围为10°～45°。
  2. 如权利要求1所述的用于打印OLED显示器件的凹槽结构，其中，所述基板上设有阳极，所述围拢成凹槽的堤坝设于所述阳极的四周边缘及基板上。
  3. 如权利要求2所述的用于打印OLED显示器件的凹槽结构，其中，所述第一分支堤坝层的上表面与阳极之间的高度差范围为50nm～800nm，所述堤坝的厚度小于3微米。
  4. 如权利要求2所述的用于打印OLED显示器件的凹槽结构，其中，所述阳极的材料为ITO。
  5. 如权利要求1所述的用于打印OLED显示器件的凹槽结构，其中，所述堤坝围拢成凹槽的倾斜内周面与基板之间的夹角为30°～60°，所述凹槽的宽度自下往上逐渐增大。
  6. 一种OLED显示器件的制作方法，包括如下步骤：
    步骤1、提供一基板、第一分支堤坝层材料及第二分支堤坝层材料；
    步骤2、在所述基板上制作阳极，使用所述第一分支堤坝层材料及第二分支堤坝层材料通过涂布、干燥、及蚀刻工艺在基板上依次制作层叠设置的第一分支堤坝层及第二分支堤坝层，形成设于所述阳极的四周边缘及基板上的堤坝，所述堤坝围拢成凹槽；
    步骤3、提供空穴注入层墨水，将空穴注入层墨水滴入凹槽内，所述空穴注入层墨水与所述第一分支堤坝层围拢成凹槽的倾斜内周面形成的接触角范围为10°～45°，所述空穴注入层墨水与所述第二分支堤坝层围拢成凹槽的倾斜内周面形成的接触角范围为30°～60°，干燥烘烤后形成空穴注入 层；
    步骤4、提供空穴传输层墨水，将空穴传输层墨水滴入凹槽内，所述空穴传输层墨水与所述第二分支堤坝层围拢成凹槽的倾斜内周面形成的接触角范围为10°～45°，干燥烘烤后形成层叠于所述空穴注入层上的空穴传输层；
    步骤5、提供发光功能层墨水，将发光功能层墨水滴入凹槽内，所述发光功能层墨水与所述第二分支堤坝层围拢成凹槽的倾斜内周面形成的接触角范围为10°～45°，干燥烘烤后形成层叠于所述空穴传输层上的发光功能层；
    步骤6、在所述发光功能层上依次制作电子传输层、电子注入层、及阴极。
  7. 如权利要求6所述的OLED显示器件的制作方法，其中，所述阳极与阴极的材料均为ITO。
  8. 如权利要求6所述的OLED显示器件的制作方法，其中，所述步骤2中，第一分支堤坝层的上表面与阳极之间的高度差范围为50nm～800nm，所述堤坝的厚度小于3μm。
  9. 如权利要求6所述的OLED显示器件的制作方法，其中，所述电子传输层及电子注入层的制作方法为真空蒸镀。
  10. 如权利要求6所述的OLED显示器件的制作方法，其中，所述步骤2中堤坝围拢成凹槽的倾斜内周面与基板之间的夹角为30°～60°，所述凹槽的宽度自下往上逐渐增大。
  11. 一种OLED显示器件的制作方法，包括如下步骤：
    步骤1、提供一基板、第一分支堤坝层材料及第二分支堤坝层材料；
    步骤2、在所述基板上制作阳极，使用所述第一分支堤坝层材料及第二分支堤坝层材料通过涂布、干燥、及蚀刻工艺在基板上依次制作层叠设置的第一分支堤坝层及第二分支堤坝层，形成设于所述阳极的四周边缘及基板上的堤坝，所述堤坝围拢成凹槽；
    步骤3、提供空穴注入层墨水，将空穴注入层墨水滴入凹槽内，所述空穴注入层墨水与所述第一分支堤坝层围拢成凹槽的倾斜内周面形成的接触角范围为10°～45°，所述空穴注入层墨水与所述第二分支堤坝层围拢成凹槽的倾斜内周面形成的接触角范围为30°～60°，干燥烘烤后形成空穴注入层；
    步骤4、提供空穴传输层墨水，将空穴传输层墨水滴入凹槽内，所述空穴传输层墨水与所述第二分支堤坝层围拢成凹槽的倾斜内周面形成的接触 角范围为10°～45°，干燥烘烤后形成层叠于所述空穴注入层上的空穴传输层；
    步骤5、提供发光功能层墨水，将发光功能层墨水滴入凹槽内，所述发光功能层墨水与所述第二分支堤坝层围拢成凹槽的倾斜内周面形成的接触角范围为10°～45°，干燥烘烤后形成层叠于所述空穴传输层上的发光功能层；
    步骤6、在所述发光功能层上依次制作电子传输层、电子注入层、及阴极；
    其中，所述阳极与阴极的材料均为ITO；
    其中，所述电子传输层及电子注入层的制作方法为真空蒸镀。
  12. 如权利要求11所述的OLED显示器件的制作方法，其中，所述步骤2中，第一分支堤坝层的上表面与阳极之间的高度差范围为50nm～800nm，所述堤坝的厚度小于3μm。
  13. 如权利要求11所述的OLED显示器件的制作方法，其中，所述步骤2中堤坝围拢成凹槽的倾斜内周面与基板之间的夹角为30°～60°，所述凹槽的宽度自下往上逐渐增大。
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