WO2018077216A1 - 磁控管、磁控溅射腔室及磁控溅射设备 - Google Patents

磁控管、磁控溅射腔室及磁控溅射设备 Download PDF

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Publication number
WO2018077216A1
WO2018077216A1 PCT/CN2017/107831 CN2017107831W WO2018077216A1 WO 2018077216 A1 WO2018077216 A1 WO 2018077216A1 CN 2017107831 W CN2017107831 W CN 2017107831W WO 2018077216 A1 WO2018077216 A1 WO 2018077216A1
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Prior art keywords
magnetic pole
magnetron
magnetic
sub
center
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Ceased
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PCT/CN2017/107831
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English (en)
French (fr)
Inventor
杨玉杰
张同文
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Beijing Naura Microelectronics Equipment Co Ltd
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Beijing Naura Microelectronics Equipment Co Ltd
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Priority to KR1020197015442A priority Critical patent/KR102182477B1/ko
Priority to JP2019523034A priority patent/JP6793904B2/ja
Priority to SG11201903713PA priority patent/SG11201903713PA/en
Publication of WO2018077216A1 publication Critical patent/WO2018077216A1/zh
Priority to US16/387,996 priority patent/US10854434B2/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/345—Magnet arrangements in particular for cathodic sputtering apparatus
    • H01J37/3455—Movable magnets
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J25/00—Transit-time tubes, e.g. klystrons, travelling-wave tubes, magnetrons
    • H01J25/50—Magnetrons, i.e. tubes with a magnet system producing an H-field crossing the E-field
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering
    • H01J37/3408—Planar magnetron sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/345—Magnet arrangements in particular for cathodic sputtering apparatus
    • H01J37/3452—Magnet distribution
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/332—Coating

Definitions

  • the invention belongs to the technical field of microelectronic processing, and particularly relates to a magnetron, a magnetron sputtering chamber and a magnetron sputtering device.
  • the integrated circuit manufacturing process can significantly reduce the size of the processor, but there are still some core components such as integrated inductors, noise suppressors, etc., which face many difficulties in high frequency, miniaturization, integration, etc. .
  • soft magnetic thin film materials having high magnetization, high magnetic permeability, high resonance frequency, and high electrical resistivity have attracted more and more attention.
  • the cutoff frequency of the soft magnetic film material can be adjusted.
  • a common method for controlling the in-plane uniaxial anisotropy field of soft magnetic films is magnetic field induced deposition, which has the advantages of simple process, no need to increase process steps, and less damage to the chip, and is the preferred method for industrial production.
  • a magnetron can be deposited using a magnetron as shown in Figures 1a and 1b.
  • Figure 1a shows a symmetrical kidney-shaped magnetron that rotates along a center of rotation 31 for scanning the surface of the target 3.
  • the symmetrical kidney magnetron includes an outer magnetic pole 221 and an inner magnetic pole 222, both of which have a closed projection shape on the target 3 and have opposite polarities.
  • a magnetic field track 223 is formed between the outer magnetic pole 221 and the inner magnetic pole 222.
  • Fig. 1b shows an asymmetric kidney-shaped magnetron whose outer magnetic pole 221 and inner magnetic pole 222 are asymmetrical in shape and outer
  • the magnetic pole 221 includes an outer yoke 2211 and a plurality of outer magnets 2212 provided on the outer yoke 2211.
  • the inner magnetic pole 222 includes an inner yoke 2221 and a plurality of outer magnets 2222 disposed on the inner yoke 2221.
  • the uniformity of the films formed by sputtering is generally poor, and the uniformity is generally >20% (calculated as the standard deviation of film thickness / film thickness) average value).
  • the process requires that the uniformity of the magnetic film is ⁇ 5%. Therefore, the use of the two magnetrons shown in Figures 1a and 1b does not satisfy the need for uniformity of the magnetic film.
  • the present invention aims to solve at least one of the technical problems existing in the prior art, and proposes a magnetron, a magnetron sputtering chamber, and a magnetron sputtering device capable of solving the sputtering formation existing in the prior art.
  • the present invention provides a magnetron having a center of rotation, the magnetron including a first outer magnetic pole of opposite polarity and a first inner magnetic pole;
  • the first outer magnet is substantially annular structure surrounding the center of rotation
  • the first inner magnetic pole is located inside the first outer magnetic pole, and a first magnetic field track is formed between the first inner magnetic pole and the first outer magnetic pole;
  • a straight line emitted from the center of rotation and emitted in one of the radial directions passes through the first magnetic field track at least twice in succession, and the magnetic field direction of the first magnetic field track through which the straight line passes twice is opposite.
  • the magnetron further includes a second outer magnetic pole and a second inner magnetic pole of opposite polarities; wherein
  • the first magnetic field track is disposed around the second magnetic field track.
  • the first outer magnetic pole includes a first sub-pole of a circular arc shape and a second sub-magnetic pole of two arcs, wherein
  • One ends of the two second magnetic poles are respectively connected to two ends of the first sub-magnetic pole, and the other ends of the two second magnetic poles of the two sections extend toward a center of the first sub-magnetic pole, and two sections are The second sub-magnetic poles are located on the same circumference, and the other ends of the two sub-poles are not connected;
  • the first inner magnetic pole is substantially arc-shaped
  • the center of the first sub-magnetic pole, the two second sub-poles and the first inner magnetic pole coincide with the center of rotation.
  • the second outer magnetic pole is substantially arc-shaped, and two ends of the second outer magnetic pole are respectively connected to the other ends of the two second sub-magnetic poles, and the joint is located at one side of the rotating center And a portion of the second outer magnetic pole that is near the middle is located on the other side of the center of rotation;
  • the second inner magnetic pole is disposed between the first inner magnetic pole and the second outer magnetic pole.
  • the second inner magnetic pole is connected to the first inner magnetic pole.
  • the second outer magnetic pole is not connected to the first outer magnetic pole
  • the second inner magnetic pole is not connected to the first inner magnetic pole.
  • the shape of the second inner magnetic pole comprises: a V shape, a U shape or a Y shape, and the opening of the V shape or the U shape faces away from the rotation center.
  • the central angle of the first sub-magnetic pole is an angle ⁇ ;
  • the angle between the two ends of the two second magnetic poles and the two rotation lines respectively is an angle ⁇ ;
  • the ratio of the angle ⁇ to the angle ⁇ is greater than 3.5.
  • the first outer magnetic pole includes a third sub-pole of a circular arc shape and a fourth sub-magnetic pole of a circular arc shape, wherein
  • the fourth sub-magnetic pole is located inside the third sub-magnetic pole, and the centers of the two are coincident with the center of rotation, and two ends of the fourth sub-pole are respectively opposite to the third sub-pole End Connect
  • the first inner magnetic pole is substantially arc-shaped, and a center of the first inner magnetic pole coincides with the center of rotation.
  • the number of times the straight line passes through the first magnetic field track is an even number.
  • the first magnetic field tracks have the same width in the linear direction.
  • the width of the first magnetic field track ranges from 10 to 60 mm.
  • the width of the first magnetic field track ranges from 15 mm to 35 mm.
  • the width of the second magnetic field track ranges from 10 to 60 mm.
  • the present invention also provides a magnetron sputtering chamber for depositing a magnetic film, comprising the above-mentioned magnetron provided by the present invention, the magnetron rotating along the center of rotation, for Scanning the surface of the target;
  • a bias magnetic field device for forming a horizontal magnetic field is provided in the magnetron sputtering chamber.
  • the present invention also provides a magnetron sputtering apparatus comprising a magnetron sputtering chamber using the above-described magnetron sputtering chamber provided by the present invention.
  • the present invention provides a magnetron that forms a first magnetic field track between a first inner magnetic pole and a first outer magnetic pole, and a straight line emitted from a center of rotation and in one of the radial directions passes through the first magnetic field at least twice in succession.
  • the track, and the direction of the magnetic field of the first magnetic field track that the line passes twice in succession is opposite. This improves film uniformity compared to the prior art.
  • the direction of magnetic modulating in the first magnetic field trajectory through which the straight line passes twice can be made different. Therefore, the magnetic material of the first magnetic field track respectively sputtered from the target corresponding to the straight line twice is respectively subjected to the repulsive force and attractive force of the bias magnetic field, and the magnetic material subjected to the bias magnetic field attraction force is applied to the workpiece to be processed.
  • Magnetic material that moves in the direction of the edge and is repelled by the biasing magnetic field The material is moved toward the center of the workpiece to be processed, so that the difference in the amount of magnetic material deposited to the edge region and the central region of the workpiece to be processed can be compensated, and the film uniformity can be improved.
  • the magnetron sputtering chamber provided by the present invention can improve the uniformity of the film by using the above-mentioned magnetron provided by the present invention.
  • the magnetron sputtering apparatus provided by the present invention can improve film uniformity by employing the above-described magnetron sputtering chamber provided by the present invention.
  • 1a is a first structural schematic view of a conventional magnetron
  • Figure 1b is a second schematic structural view of a conventional magnetron
  • Figure 2 is a schematic view showing the working principle of the magnetron of Figures 1a and 1b;
  • FIG. 3 is a schematic diagram of a working principle of a magnetron according to an embodiment of the present invention.
  • FIG. 4a is a schematic diagram of a first structure of a magnetron according to an embodiment of the present invention.
  • 4b is a schematic diagram of a second structure of a magnetron according to an embodiment of the present invention.
  • FIG. 5a is a schematic diagram of a third structure of a magnetron according to an embodiment of the present invention.
  • FIG. 5b is a schematic diagram of a fourth structure of a magnetron according to an embodiment of the present invention.
  • FIG. 5c is a schematic diagram of a fifth structure of a magnetron according to an embodiment of the present invention.
  • FIG. 5 is a schematic diagram of a sixth structure of a magnetron according to an embodiment of the present invention.
  • 5e is a schematic diagram of a seventh structure of a magnetron according to an embodiment of the present invention.
  • FIG. 5f is a schematic structural diagram of an eighth structure of a magnetron according to an embodiment of the present invention.
  • FIG. 6 is a schematic structural diagram of a magnetron sputtering chamber according to an embodiment of the present invention.
  • Magnetron sputtering chamber 1 magnetron assembly 2, holder 21, magnetron 22, outer magnetic pole 221, outer yoke 2211, outer magnet 2212, inner magnetic pole 222, inner yoke 2221, inner magnet 2222, magnetic field Track 223, deionized water 23, target 3, carrying device 4, workpiece S to be processed, upper shield 5, Lower shield 6, magnetic column 75 in the first magnetic group, magnetic column 76 in the second magnetic group, screw 8, first outer magnetic pole 101, first sub-magnetic pole 101a, second sub-magnetic pole 101b, third sub-magnetic pole 101c, fourth sub-magnetic pole 101d, first inner magnetic pole 102, first magnetic field track 103, center of rotation 31 and center of rotation O, a straight line L emitted in one of the radial directions; second outer magnetic pole 201, second inner magnetic pole 202 and The second magnetic field track 203.
  • another embodiment of the present invention provides a magnetron having a center of rotation O, and the magnetron includes a first outer pole 101 and a first inner pole 102 of opposite polarities;
  • the outer magnetic pole 101 is an annular structure surrounding the center of rotation O;
  • the first inner magnetic pole 102 is located inside the first outer magnetic pole 101, and a first magnetic field track is formed between the first inner magnetic pole 102 and the first outer magnetic pole 101.
  • a straight line L emitted from the center of rotation O and emitted in one of the radial directions passes through the first magnetic field trajectory twice in succession, and the magnetic field direction of the first magnetic field trajectory through which the straight line L passes twice is opposite.
  • the bias magnetic field is generated by the first magnetic column 75 and the second magnetic column 76 disposed on both sides of the workpiece S to be processed, wherein the N pole of the first magnetic column 75 points to the workpiece S to be processed.
  • the S pole of the second magnetic column 76 is directed to the workpiece S to be processed.
  • the magnetic field track 223 between the outer magnetic pole 221 and the inner magnetic pole 222 corresponds to the magnetic direction of the portion of the left side region of the workpiece S to be processed (the region close to the first magnetic column 75) and the magnetic pole of the first magnetic column 75.
  • the direction of the magnetic field orbit 223 corresponding to the portion of the right side of the workpiece S to be processed (the region close to the second magnetic column 76) is the same as the magnetic pole direction of the second magnetic column 76, and therefore, is sputtered from the target.
  • the magnetic material corresponding to the left region of the workpiece S to be processed is attracted to the left by the attraction of the first magnetic column 75, and the magnetic material corresponding to the right region of the workpiece S to be processed is rejected by the second magnetic column 76.
  • the offset causes the magnetic film formed by the deposition to gradually thicken from right to left, resulting in poor uniformity of the film, which cannot satisfy the requirement for uniformity of the magnetic film.
  • the magnetic control tube provided by the embodiment of the present invention is used to fabricate a soft magnetic film by a magnetron sputtering device using a bias magnetic field, the magnetic material corresponding to the interval H1 and the interval H2 respectively sputtered from the target material.
  • the magnetic direction is different. Specifically, the magnetic direction of the magnetic material corresponding to the interval H1 is 1'; and the magnetic material corresponding to the interval H2 has a magnetic direction of 2'.
  • the magnetic material having a magnetic direction of 1' on the left side is attracted by the attraction of the first magnetic column 75 to the edge of the workpiece S to be processed, and the magnetic material having a magnetic direction of 2' on the left side is subjected to
  • the repulsive force of the first magnetic column 75 is offset toward the center of the workpiece S to be processed; similarly, the magnetic material having the right magnetic direction of 1' is subjected to the repulsive force of the second magnetic column 76 to the center of the workpiece S to be processed.
  • the magnetic material having a magnetic direction of 2' on the right side is attracted by the attraction of the second magnetic column 76 to the edge of the workpiece S to be processed.
  • the magnetron provided by the embodiment of the present invention can cooperate with the bias magnetic field to compensate for the difference in the amount of magnetic material deposited to the edge region and the central region of the workpiece S to be processed, thereby improving film uniformity.
  • the uniformity of the magnetic film obtained by using the magnetron provided by the embodiment of the present invention is ⁇ 5%, thereby satisfying the industrial demand for the uniformity of the magnetic film.
  • the magnetron provided by the embodiment of the present invention is also used for sputter deposition of a non-magnetic film. A film having good uniformity can be obtained.
  • the magnetron provided by the embodiment of the present invention satisfies the following conditions, the sputtering uniformity of the entire surface of the workpiece to be processed can be achieved, and in particular, the sputtering uniformity of the magnetic film on the workpiece to be processed of a small size can be better.
  • the condition that should be satisfied is that the first outer magnetic pole 101 and the first inner magnetic pole 102 are alternately arranged along the direction of the straight line L emitted from the center of rotation O and in one of the radial directions, and are spaced apart by a certain distance (such as the interval H1 in FIG. 3).
  • a first magnetic field track 103 is formed between the first outer magnetic pole 101 and the first inner magnetic pole 102; a straight line L emitted from the center of rotation O and emitted in one of the radial directions passes through the first magnetic field track 103 twice in succession. And the direction of the magnetic field of the first magnetic field track that the straight line L passes twice in succession is opposite.
  • the magnetron provided by the embodiment of the present invention satisfies the above conditions only at the edge portion of the target, at least the uniformity of the magnetic film sputtered at the edge portion of the workpiece to be processed can be improved, thereby being applicable to the magnetic properties of the large-sized workpiece to be processed. Uniform sputtering of the film.
  • the number of times the straight line L passes through the first magnetic field track 103 is an even number.
  • the even number can be equal to 2 or greater than 2.
  • the structure of the first type of magnetron is as shown in FIG. 4a, wherein the first outer magnetic pole 101 includes a first sub-pole 101a of a circular arc shape, and a second sub-pole 101b of two arc-shaped shapes, wherein two segments One end of the second sub-magnetic pole 101b is respectively connected to both ends of the first sub-magnetic pole 101a, the other end of the two-stage second sub-magnetic pole 101b extends toward the center of the first sub-magnetic pole 101a, and the two second sub-magnetic poles 101b are located at the same The circumference is the same, and the other ends of the two second sub-poles 101b are not connected.
  • the junction of the second sub-magnetic pole 101b and the first sub-magnetic pole 101a can be transitioned by a smooth curve.
  • the first inner magnetic pole 102 is located inside the first outer magnetic pole 101 and has a circular arc shape; the centers of the first sub magnetic pole 101a, the two second sub magnetic poles 101b, and the first inner magnetic pole 102 coincide with the rotation center O.
  • the first The center of the sub-magnetic pole 101a, the two-stage second sub-magnetic pole 101b, and the first inner magnetic pole 102 may not be the center of rotation O, and the magnetic pole film uniformity may be achieved as long as the rotation center O is located inside the first inner magnetic pole 102.
  • the first outer magnetic pole 101 is a non-closed magnetic pole composed of a first sub-magnetic pole 101a and two second sub-magnetic poles 101b. This magnetron can be used in the case where the sputtering power source is an RF power source.
  • the structure of the second magnetron is as shown in FIG. 4b, and the first outer magnetic pole 101 includes a third sub-pole 101c having a circular arc shape and a fourth sub-pole 101d having a circular arc shape, wherein the fourth sub-magnetic pole 101d is located at the third The inner side of the sub-magnetic pole 101c, and the centers of both of them coincide with the center of rotation O, and both ends of the fourth sub-magnetic pole 101d are respectively connected to both ends of the third sub-magnetic pole 101c.
  • the first inner magnetic pole 102 has a circular arc shape, and the center of the first inner magnetic pole 102 coincides with the center of rotation O.
  • the third sub-magnetic pole 101c and the fourth sub-magnetic pole 101d may not be the rotation center O, and the magnetic pole film uniformity may be achieved as long as the rotation center O is located inside the first inner magnetic pole 102.
  • the first outer magnetic pole 101 constitutes a closed magnetic pole by the third sub-magnetic pole 101c and the fourth sub-magnetic pole 101d.
  • This magnetron can be applied to a case where the sputtering power source is a DC power source.
  • the present invention is not limited to the shape of the first outer magnetic pole 101 and the first inner magnetic pole 102 shown in FIGS. 4a and 4b.
  • the first outer magnetic pole 101 and the first inner magnetic pole 102 Any other shape may be employed as long as the straight line L emitted from the center of rotation O and emitted in one of the radial directions passes through the first magnetic field track 103 twice in succession, and the first magnetic field track that the straight line L passes twice in succession
  • the magnetic field of 103 is reversed to achieve the object of the present invention.
  • the magnetron further includes a second outer magnetic pole and a second inner magnetic pole of opposite polarities, and a second magnetic field track 203 is formed therebetween, such as the track BAF shown in FIG. 5a. Shown. And, the rotation center O is located in the second magnetic field track 203; the first magnetic field track 103 is disposed around the second magnetic field track 203 for scanning the edge portion of the target, and the second magnetic field track 203 is for scanning the central portion of the target. In this way, when the magnetron is rotated around the rotation center O, the scanning range can be increased by the rotation center O and its surrounding portions, so that the scanning dead zone can be avoided. Achieve full target scanning of the target, which not only further improves the uniformity of the magnetic film, but also improves the utilization of the target.
  • the structure of the magnetron having the second outer magnetic pole and the second inner magnetic pole will be described in detail below, and the magnetrons shown in Figs. 5a to 5d are all based on the magnetron shown in Fig. 4a. Improvement, specifically, the structure of the first type of magnetron is as shown in FIG.
  • the first outer magnetic pole 101 includes a first sub-magnetic pole 101a having a circular arc shape, and a second sub-magnetic pole 101b having two arc-shaped shapes, wherein One ends of the two second sub-magnetic poles 101b are respectively connected to both ends of the first sub-magnetic pole 101a, and the other ends of the two second sub-magnetic poles 101b extend toward the center of the first sub-magnetic pole 101a, and the two second sub-magnetic poles 101b Located on the same circumference, the other ends of the two second sub-magnetic poles 101b are not connected.
  • the junction of the second sub-magnetic pole 101b and the first sub-magnetic pole 101a can be transitioned by a smooth curve.
  • the first inner magnetic pole 102 is located inside the first outer magnetic pole 101 and has a circular arc shape; the centers of the first sub magnetic pole 101a, the two second sub magnetic poles 101b, and the first inner magnetic pole 102 coincide with the rotation center O. .
  • the second outer magnetic pole 201 has a circular arc shape, and two ends of the second outer magnetic pole 201 are respectively connected to the other ends of the two second sub-magnetic poles 101b, the connection is located at one side of the rotation center O, and the second outer magnetic pole A portion near the middle of 201 is located on the other side of the center of rotation O, that is, the second outer magnetic pole 201 forms a structure that is concave toward the center of rotation O. Further, the second inner magnetic pole 202 is disposed between the first inner magnetic pole 102 and the second outer magnetic pole 201, and the second inner magnetic pole 202 is connected to the first inner magnetic pole 102.
  • the two ends of the second outer magnetic pole 201 are respectively connected to the other ends of the two second magnetic poles 101b, which is advantageous for processing, for example, integral molding.
  • the second outer magnetic pole 201 and the second sub magnetic pole 101b are simultaneously formed.
  • the magnetic poles of the second inner magnetic pole 202 and the first inner magnetic pole 102 have the same polarity, the second inner magnetic pole 202 and the first inner magnetic pole 102 are made. Connection is conducive to processing.
  • the shape of the second inner magnetic pole 202 includes, but is not limited to, a V shape (as shown in FIG. 5a), a U shape (as shown in FIG. 5b), or a Y shape (as shown in FIG. 5c).
  • the V-shaped or U-shaped opening faces away from the center of rotation O.
  • the above magnetron is more suitable for depositing a magnetic film on a large-sized workpiece to be processed (for example, an 8-inch or 12-inch wafer) because when the size of the workpiece to be processed is large, it is necessary to adaptively increase the target.
  • the first magnetic field track 103 has the same width in the direction of the straight line L emitted from the center of rotation O and emitted in one of the radial directions. That is, as shown in FIG. 3, the width of the pitch H1 is equal to the width of the pitch H2.
  • the number of magnetic domains in the spacing H1 and the spacing H2 can be made substantially the same, so that the amount of the magnetic material subjected to the attractive force and the repulsive force is substantially the same, thereby causing the magnetic material moving toward the edge of the workpiece to be processed and the center of the workpiece to be processed.
  • the amount of moving magnetic material is substantially the same, thereby improving the uniformity of the magnetic film.
  • the range of the width of the first magnetic field track 103 in the direction of the straight line L is preferably 10 to 60 mm, more preferably 15 to 35 mm.
  • the width range is such that the logarithm of the magnetic field track capable of generating an attractive force and a repulsive force to the magnetic material is set as much as possible according to the decay speed of the magnetic field, so that the uniformity of the magnetic film can be effectively improved.
  • the central angle of the first arc 101a is an angle ⁇ ; the angle between the two ends of the two second sub-poles 101b and the rotation center O is an angle. ⁇ ; and, the ratio of the angle ⁇ to the angle ⁇ is preferably greater than 3.5.
  • the distribution of the first magnetic field track 103 in the circumferential direction can be controlled within a certain proportional range, so that the uniformity of the magnetic film at the edge portion can be effectively improved when processing a workpiece having a large size.
  • the above-mentioned angle ⁇ is close to 360 degrees, and the uniformity of the magnetic film deposited on the workpiece to be processed is better at this time.
  • both ends of the second outer magnetic pole 201 are respectively connected with the two ends of the first outer magnetic pole 101 to form a closed outer magnetic pole.
  • the present invention is not limited thereto, and in practice, the two may be independent of each other.
  • the structure of the second magnetron is as shown in Fig. 5e and Fig. 5f, which is different from the structure of the first magnetron (Fig. 5a to Fig. 5d) except that it is shown in Fig. 4a.
  • the second outer magnetic pole 201 is not connected to the first outer magnetic pole 101; the second inner magnetic pole 202 is not connected to the first inner magnetic pole 102.
  • a second magnetic field track 203 is formed between the second outer magnetic pole 201 and the second inner magnetic pole 202, and the center of rotation O is located in the second magnetic field track 203.
  • the second outer magnetic pole 201 and the first outer magnetic pole 101 are independent of each other, so that the magnetic properties of the two are not related; the second inner magnetic pole 202 and the first inner magnetic pole 102 are independent of each other, so that the magnetic properties of the two are not associated, thereby It is necessary to ensure that the polarities of the second inner magnetic pole 202 and the second outer magnetic pole 201 are opposite.
  • the second outer magnetic pole 201 and the second inner magnetic pole 202 may be curved, straight, or any other shape as long as the center of rotation O can be enclosed in the second magnetic field track 203.
  • the second magnetron as shown in Fig. 5e and Fig. 5f can uniformly sputter the magnetic thin film at the edge portion of the workpiece to be processed, and at the same time, can achieve full target scanning.
  • the second type of magnetron as shown in Figs. 5e and 5f can be applied to the case where the sputtering power source is a radio frequency power source.
  • the uniformity of the magnetic film obtained by the sputtering process using the magnetrons of the above various structures provided by the embodiments of the present invention is ⁇ 5%, even 3%, and has excellent film uniformity.
  • the magnetron provided by the embodiment of the present invention can compensate for the difference in the amount of magnetic material deposited to the edge region and the central region of the workpiece to be processed, thereby improving film uniformity. Further, when the magnetron of the present invention is used for sputter deposition of a non-magnetic thin film, a film having good uniformity can be obtained.
  • the present invention further provides a magnetron sputtering chamber for depositing a magnetic film, comprising: the above-mentioned magnetron provided by the embodiment of the present invention, the magnetron is rotated along a rotation center, and is used for Scan the surface of the target. Also, a magnetron sputtering chamber is provided for forming A bias magnetic field device for a horizontal magnetic field.
  • a horizontal magnetic field can be formed above the carrier device 4 (the magnetic field strength can reach 50 to 300 Gs), so that the magnetic domains of the magnetic material deposited on the surface of the workpiece S to be processed are arranged in the horizontal direction, thereby enabling An easy magnetization field is formed in the direction in which the magnetic domains are arranged, and a hard magnetic field is formed in a direction perpendicular to the direction in which the magnetic domains are arranged, that is, an in-plane anisotropy field is formed, thereby obtaining an in-plane anisotropy magnetic film, which is suitable for A magnetic film is deposited on a larger workpiece to be processed, such as an 8-inch or 12-inch wafer.
  • the magnetron sputtering chamber includes a cavity 1, a magnetron assembly 2, a target 3, a carrier 4, an upper shield 5, a lower shield 6, and a bias magnetic field device.
  • the target 3 is disposed at the top of the cavity 1; the carrying device 4 is configured to carry the workpiece S to be processed, which is disposed at the bottom of the cavity 1 and disposed opposite to the target 3; the upper shield 5 is fixed to the cavity
  • the top of the side wall of the body 1 is disposed around the inner side of the side wall of the cavity 1; the lower shield 6 is fixed on the top of the side wall of the cavity 1 and located outside the upper shield 5, and the lower shield 6 is formed to surround the carrying device 4.
  • the groove between the side wall of the cavity 1 and the lower shield 6 serves to protect the side wall of the cavity 1 and the portion below the carrier 4 from plasma corrosion.
  • the magnetron assembly 2 is disposed above the target 3, and includes a holder 21 and a magnetron 22 made of an insulating material.
  • the fixing frame 21 is a housing structure having an opening, and one end having an opening is fixed on the target 3; the magnetron 22 is disposed in the fixing frame 21, and is fixed on the top of the fixing frame 21, and in the fixing frame 21
  • the inside is also filled with deionized water 23 for cooling the target 3; the magnetron 22 is used to scan the surface of the target 3, and the magnetron 22 is rotated around the center of rotation, which is centered on the center of the target 3 correspond.
  • the bias magnetic field device is fixed in the recess of the lower shield 6 by a screw 8, the bias magnetic field device comprising: a first magnetic group and a second magnetic group, wherein the first magnetic group comprises a plurality of first magnetic columns 75 and The two magnetic groups include a plurality of second magnetic columns 76, and the plurality of first magnetic columns 75 are arranged around the carrier device 4 to form an arc In the shape, a plurality of second magnetic columns 76 are arranged around the carrier device 4 to form an arc shape, and the plurality of first magnetic columns 75 are symmetrically disposed with the plurality of second magnetic columns 76. Moreover, the magnetic poles of the first magnetic column 75 and the second magnetic column 76 pointing to the carrying device 4 are different. Specifically, the first magnetic column 75 is directed to the magnetic pole N pole of the carrying device 4, and the second magnetic column 76 is directed to the carrying device 4. The magnetic pole is extremely S pole.
  • the magnetron sputtering chamber provided by the embodiment of the invention can avoid the problem of poor uniformity of the film formed on the workpiece to be processed due to the presence of the bias magnetic field by using the above-mentioned magnetron provided by the embodiment of the invention. Thereby, the film uniformity can be improved.
  • an embodiment of the present invention further provides a magnetron sputtering apparatus including the above-described magnetron sputtering chamber provided by the embodiment of the present invention.
  • the magnetron sputtering apparatus provided by the embodiment of the invention can avoid the poor uniformity of the film formed on the workpiece to be processed due to the existence of the bias magnetic field by using the above-mentioned magnetron sputtering chamber provided by the embodiment of the invention. Problem, which can improve film uniformity.

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Abstract

一种磁控管、磁控溅射腔室及磁控溅射设备，磁控管包括极性相反的第一外磁极（101）和第一内磁极（102）；其中，第一外磁极（101）为环绕旋转中心（O）的环形结构；第一内磁极（102）位于第一外磁极（101）的内侧，且在第一内磁极（102）与第一外磁极（101）之间形成第一磁场轨道（103）；自旋转中心（O）且沿其中一条半径方向发射出的直线（L）至少连续两次穿过第一磁场轨道（103），且直线连续两次穿过的第一磁场轨道（103）的磁场方向相反。提供的磁控管能够解决现有技术中存在的溅射形成的薄膜均匀性较差的技术问题。

Description

磁控管、磁控溅射腔室及磁控溅射设备 技术领域
本发明属于微电子加工技术领域，具体涉及一种磁控管、磁控溅射腔室以及磁控溅射设备。
背景技术
随着技术的发展，集成电路制造工艺已可以显著缩小处理器的尺寸，但是仍然有一些诸如集成电感、噪声抑制器等的核心元器件在高频化、微型化、集成化等方面面临诸多困难。为了解决此问题，具有高磁化强度、高磁导率、高共振频率及高电阻率的软磁薄膜材料引起人们越来越多的关注。
虽然对软磁薄膜材料的关注主要集中在高磁导率和高磁化强度、以及低矫顽力和低损耗等性能上，但是，影响软磁薄膜材料发展的一个主要因素是它的截止频率。而通过调控软磁薄膜的面内单轴各向异性场，可以实现对软磁薄膜材料的截止频率的调节。而调控软磁薄膜的面内单轴各向异性场的一个常用方法是磁场诱导沉积，其具有工艺简单、无需增加工艺步骤、对芯片伤害小等的优点，是工业生产的首选方法。
另外，为了提高溅射的效率和靶材的利用率，需要在靶材的背部设有磁控管，利用磁控管所产生的磁场延长电子的运动轨迹，以增加电子与工艺气体碰撞的几率，从而提高等离子体的密度，进而提高溅射的效率和靶材的利用率。
在磁控溅射腔室中，通常可以采用如图1a和图1b所示的磁控管，沉积磁性薄膜。具体地，图1a示出了一种对称肾形磁控管，其沿旋转中心31进行旋转，用于对靶材3的表面进行扫描。该对称肾形磁控管包括外磁极221和内磁极222，二者在靶材3上的正投影性质均为闭合环形，且极性相反， 并且在外磁极221和内磁极222之间形成磁场轨道223。
与图1a所示的磁控管相类似的，图1b示出了一种非对称肾形磁控管，该磁控管的外磁极221和内磁极222的形状为不对称图形，并且，外磁极221包括外磁轭2211和在外磁轭2211上设置的多个外磁铁2212；内磁极222包括内磁轭2221和在内磁轭2221上设置的多个外磁铁2222。
使用上述两种磁控管在磁控溅射设备制作软磁薄膜时，溅射形成的薄膜均匀性较差，其均匀性一般会＞20％(计算方式为薄膜厚度的标准方差/薄膜厚度的平均值)。由于工艺上要求磁性薄膜的均匀性≤5％。因此，采用图1a和图1b示出的两种磁控管不能满足对磁性薄膜均匀性的需求。
发明内容
本发明旨在至少解决现有技术中存在的技术问题之一，提出了一种磁控管、磁控溅射腔室以及磁控溅射设备，其能够解决现有技术中存在的溅射形成的薄膜均匀性较差的技术问题。
为此，本发明提供了一种磁控管，其具有旋转中心，所述磁控管包括极性相反的第一外磁极和第一内磁极；其中，
所述第一外磁极为环绕所述旋转中心的环形结构；
所述第一内磁极位于所述第一外磁极的内侧，且在所述第一内磁极与所述第一外磁极之间形成第一磁场轨道；
自所述旋转中心且沿其中一条半径方向发射出的直线至少连续两次穿过所述第一磁场轨道，且所述直线连续两次穿过的所述第一磁场轨道的磁场方向相反。
优选的，所述磁控管还包括极性相反的第二外磁极和第二内磁极；其中，
在所述第二外磁极和所述第二内磁极之间形成第二磁场轨道，且所述旋转中心位于所述第二磁场轨道内；
所述第一磁场轨道环绕所述第二磁场轨道设置。
优选的，所述第一外磁极包括圆弧形的第一子磁极和两段圆弧形的第二子磁极，其中，
两段所述第二子磁极的一端分别与所述第一子磁极的两端连接，两段所述第二子磁极的另一端向靠近所述第一子磁极的中心延伸，且两段所述第二子磁极位于同一圆周，并且两段所述第二子磁极的另一端不相连；
所述第一内磁极为圆弧形；
所述第一子磁极、两段所述第二子磁极和所述第一内磁极的圆心均与所述旋转中心相重合。
优选的，所述第二外磁极为圆弧形，且所述第二外磁极的两端分别与两段所述第二子磁极的另一端连接，该连接处位于所述旋转中心的一侧，且所述第二外磁极的靠近中间的一部分位于所述旋转中心的另一侧；
所述第二内磁极设置在所述第一内磁极和所述第二外磁极之间。
优选的，所述第二内磁极与所述第一内磁极连接。
优选的，所述第二外磁极与所述第一外磁极不相连；
所述第二内磁极与所述第一内磁极不相连。
优选的，所述第二内磁极的形状包括：V形、U形或者Y形，且V形或者U形的开口背离所述旋转中心。
优选的，所述第一子磁极的圆心角为角α；两段所述第二子磁极的另一端分别与所述旋转中心之间的两条连线之间的夹角为角β；
所述角α与所述角β的比值大于3.5。
优选的，所述第一外磁极包括圆弧形的第三子磁极和圆弧形的第四子磁极，其中，
所述第四子磁极位于所述第三子磁极的内侧，且二者的圆心均与所述旋转中心相重合，并且所述第四子磁极的两端分别与所述第三子磁极的两端连 接；
所述第一内磁极为圆弧形，且所述第一内磁极的圆心与所述旋转中心相重合。
优选的，所述直线穿过所述第一磁场轨道的次数为偶数。
优选的，所述第一磁场轨道在所述直线方向上的宽度相等。
优选的，所述第一磁场轨道的宽度的取值范围在10～60mm。
优选的，所述第一磁场轨道的宽度的取值范围在15mm～35mm。
优选的，所述第二磁场轨道的宽度的取值范围在10～60mm。
作为另一个技术方案，本发明还提供一种磁控溅射腔室，用于沉积磁性薄膜，包括本发明提供的上述磁控管，所述磁控管沿所述旋转中心进行旋转，用于对靶材表面进行扫描；
并且，在所述磁控溅射腔室中还设置有用于形成水平磁场的偏置磁场装置。
作为另一个技术方案，本发明还提供一种磁控溅射设备，包括磁控溅射腔室，所述磁控溅射腔室采用本发明提供的上述磁控溅射腔室。
本发明具有以下有益效果：
本发明提供的磁控管，其在第一内磁极与第一外磁极之间形成第一磁场轨道，并且自旋转中心且沿其中一条半径方向发射出的直线至少连续两次穿过第一磁场轨道，且直线连续两次穿过的第一磁场轨道的磁场方向相反。这与现有技术相比，可以提高薄膜均匀性。
尤其对于采用偏置磁场的磁控溅射设备制作软磁薄膜的情况，通过采用本发明提供的上述磁控管，可以使直线连续两次穿过的第一磁场轨道中的磁筹方向不同，从而使自靶材溅射出的分别对应直线连续两次穿过的第一磁场轨道的磁性材料分别受到偏置磁场的排斥力和吸引力，而受到偏置磁场吸引力的磁性材料向待加工工件的边缘方向移动，受到偏置磁场排斥力的磁性材 料向待加工工件的中心方向移动，从而可以补偿沉积至待加工工件的边缘区域和中心区域的磁性材料的数量差异，进而可以提高薄膜均匀性。
本发明提供的磁控溅射腔室，其通过采用本发明提供的上述磁控管，可以提高薄膜均匀性。
本发明提供的磁控溅射设备，其通过采用本发明提供的上述磁控溅射腔室，可以提高薄膜均匀性。
附图说明
图1a为现有的磁控管的第一种结构示意图；
图1b为现有的磁控管的第二种结构示意图；
图2为采用图1a和图1b的磁控管的工作原理示意图；
图3为本发明实施例提供的磁控管的工作原理示意图；
图4a为本发明实施例提供的磁控管的第一种结构示意图；
图4b为本发明实施例提供的磁控管的第二种结构示意图；
图5a为本发明实施例提供的磁控管的第三种结构示意图；
图5b为本发明实施例提供的磁控管的第四种结构示意图；
图5c为本发明实施例提供的磁控管的第五种结构示意图；
图5d为本发明实施例提供的磁控管的第六种结构示意图；
图5e为本发明实施例提供的磁控管的第七五种结构示意图；
图5f为本发明实施例提供的磁控管的第八种结构示意图；
图6为本发明实施例提供的磁控溅射腔室的结构示意图。
其中，附图标记包括：
磁控溅射腔室1、磁控管组件2、固定架21、磁控管22、外磁极221、外磁轭2211、外磁铁2212、内磁极222、内磁轭2221、内磁铁2222、磁场轨道223、去离子水23、靶材3、承载装置4、待加工工件S、上屏蔽件5、 下屏蔽件6、第一磁组中的磁柱75、第二磁组中的磁柱76、螺丝8、第一外磁极101、第一子磁极101a、第二子磁极101b、第三子磁极101c、第四子磁极101d、第一内磁极102、第一磁场轨道103、旋转中心31和旋转中心O、其中一条半径方向发射出的直线L；第二外磁极201、第二内磁极202和第二磁场轨道203。
具体实施方式
为使本领域的技术人员更好地理解本发明的技术方案，下面结合附图来对本发明提供的磁控管、磁控溅射腔室以及磁控溅射设备进行详细描述。
请参阅图3，本发明实施例提供了另一种磁控管，其具有旋转中心O，且该磁控管包括极性相反的第一外磁极101和第一内磁极102；其中，第一外磁极101为环绕旋转中心O的环形结构；第一内磁极102位于第一外磁极101的内侧，且在第一内磁极102与第一外磁极101之间形成第一磁场轨道。自旋转中心O且沿其中一条半径方向发射出的直线L连续两次穿过该第一磁场轨道，且该直线L连续两次穿过的第一磁场轨道的磁场方向相反。
也就是说，在第一外磁极101和第一内磁极102之间具有间隔，并且，自旋转中心O且沿其中一条半径方向发射出的直线L穿过该间隔两次，第一次穿过的间隔为H1，第二次穿过的间隔为H2，且间隔H1的磁场方向与间隔H2的磁场方向相反。
在使用现有技术中类似图1a和图1b示出的两种磁控管时，会存在以下问题，即：在采用偏置磁场的磁控溅射设备制作软磁薄膜时，溅射形成的薄膜均匀性较差，其均匀性一般会＞20％(计算方式为薄膜厚度的标准方差/薄膜厚度的平均值)。由于工艺上要求磁性薄膜的均匀性≤5％。因此，采用图1a和图1b示出的两种磁控管不能满足对磁性薄膜均匀性的需求。
下面对使用上述两种磁控管存在的薄膜均匀性差的原因进行详细说明， 具体地，如图2所示，偏置磁场由设置在待加工工件S两侧的第一磁柱75和第二磁柱76产生，其中，第一磁柱75的N极指向待加工工件S，第二磁柱76的S极指向待加工工件S。在此基础上，外磁极221和内磁极222之间的磁场轨道223对应待加工工件S左侧区域(靠近第一磁柱75的区域)的部分的磁筹方向与第一磁柱75的磁极方向相反，而磁场轨道223对应待加工工件S右侧区域(靠近第二磁柱76的区域)的部分的磁筹方向与第二磁柱76的磁极方向相同，因此，自靶材溅射出的对应待加工工件S左侧区域的磁性材料会受到第一磁柱75的吸引而向左偏移，同时对应待加工工件S右侧区域的磁性材料会受到第二磁柱76的排斥同样向左偏移，从而造成了沉积形成的磁性薄膜从右至左逐渐增厚，导致薄膜均匀性较差，不能满足对磁性薄膜均匀性的需求。
为了解决上述技术问题，使用本发明实施例提供的磁控管在采用偏置磁场的磁控溅射设备制作软磁薄膜时，自靶材溅射出的分别对应上述间隔H1和间隔H2的磁性材料的磁性方向不同，具体地，对应上述间隔H1的磁性材料的磁性方向为1’；对应上述间隔H2的磁性材料的磁性方向为2’。在这种情况下，左侧磁性方向为1’的磁性材料会受到第一磁柱75的吸引力而向待加工工件S的边缘偏移，同时左侧磁性方向为2’的磁性材料会受到第一磁柱75的排斥力而向待加工工件S的中心偏移；同理，右侧磁性方向为1’的磁性材料会受到第二磁柱76的排斥力而向待加工工件S的中心偏移；右侧磁性方向为2’的磁性材料会受到第二磁柱76的吸引力而向待加工工件S的边缘偏移。由此，本发明实施例提供的磁控管能够与偏置磁场配合，补偿沉积至待加工工件S的边缘区域和中心区域的磁性材料的数量差异，进而可以提高薄膜均匀性。利用本发明实施例提供的磁控管获得的磁性薄膜的均匀性≤5％，从而满足了工业上对磁性薄膜均匀性的需求。
另外，本发明实施例提供的磁控管在用于非磁性薄膜的溅射沉积时，也 能得到均匀性良好的薄膜。
此外，本发明实施例提供的磁控管若满足下述条件，可以实现待加工工件整个表面的溅射均匀性，尤其可以使小尺寸的待加工工件上的磁性薄膜的溅射均匀性更好。应该满足的条件为：第一外磁极101和第一内磁极102沿自旋转中心O且沿其中一条半径方向发射出的直线L所在方向相互交替设置且间隔一定距离(如图3中的间隔H1和间隔H2)；第一外磁极101和第一内磁极102之间形成第一磁场轨道103；自旋转中心O且沿其中一条半径方向发射出的直线L连续两次穿过第一磁场轨道103，且该直线L连续两次穿过的第一磁场轨道的磁场方向相反。
若本发明实施例提供的磁控管只在靶材边缘部分满足上述条件，则至少可以提高溅射在待加工工件边缘部分的磁性薄膜的均匀性，从而可以适用于大尺寸待加工工件的磁性薄膜的均匀溅射。
优选的，上述直线L穿过第一磁场轨道103的次数为偶数。这样，可以存在磁场方向相反的至少两个第一磁场轨道103，保证受到吸引作用的磁性材料和受到排斥作用的磁性材料成对出现，从而可以进一步提高薄膜均匀性。该偶数可以等于2或者大于2。
下面对本发明实施例提供的磁控管的几种结构进行详细描述。具体地，第一种磁控管的结构请参阅图4a，其第一外磁极101包括圆弧形的第一子磁极101a，和两段圆弧形的第二子磁极101b，其中，两段第二子磁极101b的一端分别与第一子磁极101a的两端连接，两段第二子磁极101b的另一端向靠近第一子磁极101a的中心延伸，并且两段第二子磁极101b位于同一圆周，且两段第二子磁极101b的另一端不相连。上述第二子磁极101b与第一子磁极101a的连接处可以通过圆滑曲线过渡。而且，第一内磁极102位于第一外磁极101的内侧，且为圆弧形；第一子磁极101a、两段第二子磁极101b和第一内磁极102的圆心均与旋转中心O相重合。当然，在实际应用中，第一 子磁极101a、两段第二子磁极101b和第一内磁极102的圆心也可以不是旋转中心O，只要使该旋转中心O位于第一内磁极102的内侧，也可以实现磁极薄膜均匀性。
上述第一外磁极101为由第一子磁极101a和两段第二子磁极101b构成的非闭合磁极。这种磁控管可以应用在溅射电源为射频电源的情况。
第二种磁控管的结构如图4b所示，第一外磁极101包括圆弧形的第三子磁极101c和圆弧形的第四子磁极101d，其中，第四子磁极101d位于第三子磁极101c的内侧，且二者的圆心均与旋转中心O相重合，并且第四子磁极101d的两端分别与第三子磁极101c的两端连接。第一内磁极102为圆弧形，且该第一内磁极102的圆心与旋转中心O相重合。当然，在实际应用中，第三子磁极101c和第四子磁极101d也可以不是旋转中心O，只要使该旋转中心O位于第一内磁极102的内侧，也可以实现磁极薄膜均匀性。
由上可知，第一外磁极101由第三子磁极101c和第四子磁极101d构成闭合磁极，这种磁控管可以应用在溅射电源为直流电源的情况。
需要说明的是，本发明并不局限于采用图4a和图4b所示的第一外磁极101和第一内磁极102的形状，在实际应用中，第一外磁极101和第一内磁极102还可以采用其他任意形状，只要能够实现自旋转中心O且沿其中一条半径方向发射出的直线L连续两次穿过第一磁场轨道103，且该直线L连续两次穿过的第一磁场轨道103的磁场方向相反，即可实现本发明的目的。
为了实现对靶材的全靶扫描，磁控管还包括极性相反的第二外磁极和第二内磁极，且在二者之间形成第二磁场轨道203，如图5a示出的轨道B-A-F所示。并且，旋转中心O位于第二磁场轨道203内；第一磁场轨道103环绕第二磁场轨道203设置，用于扫描靶材的边缘部分，而第二磁场轨道203用于扫描靶材的中心部分。这样，可以在磁控管围绕旋转中心O旋转时，可以使扫描范围增加旋转中心O及其周围的部分，从而可以避免存在扫描盲区， 实现对靶材的全靶扫描，进而不仅可以进一步提高磁性薄膜均匀性，而且还可以提高靶材的利用率。
下面对具有第二外磁极和第二内磁极的磁控管的结构进行详细描述，图5a～图5d示出的磁控管均是在图4a示出的磁控管的基础上进行的改进，具体地，第一种磁控管的结构如图5a所示，第一外磁极101包括圆弧形的第一子磁极101a，和两段圆弧形的第二子磁极101b，其中，两段第二子磁极101b的一端分别与第一子磁极101a的两端连接，两段第二子磁极101b的另一端向靠近第一子磁极101a的中心延伸，并且两段第二子磁极101b位于同一圆周，且两段第二子磁极101b的另一端不相连。上述第二子磁极101b与第一子磁极101a的连接处可以通过圆滑曲线过渡。而且，第一内磁极102位于第一外磁极101的内侧，且为圆弧形；第一子磁极101a、两段第二子磁极101b和第一内磁极102的圆心均与旋转中心O相重合。
第二外磁极201为圆弧形，且该第二外磁极201的两端分别与两段第二子磁极101b的另一端连接，该连接处位于旋转中心O的一侧，且第二外磁极201的靠近中间的一部分位于旋转中心O的另一侧，也就是说，第二外磁极201形成凹向旋转中心O的结构。并且，第二内磁极202设置在第一内磁极102和第二外磁极201之间，且第二内磁极202与第一内磁极102连接。
由于第二外磁极201和第二子磁极101b的磁极极性相同，通过使第二外磁极201的两端分别和两段第二子磁极101b的另一端连接，有利于加工，例如采用一体成型的方式同时制作第二外磁极201和第二子磁极101b；同理，由于第二内磁极202和第一内磁极102的磁极极性相同，通过使第二内磁极202与第一内磁极102连接，有利于加工。
第二内磁极202的形状包括但不限于：V形(如图5a所示)、U形(如图5b所示)或者Y形(如图5c所示)。其中，V形或者U形的开口背离旋转中心O。
上述磁控管更加适用于在尺寸较大的待加工工件(例如8寸或12寸晶片)上沉积磁性薄膜，这是因为：当待加工工件的尺寸较大时，需要适应性地增大靶材尺寸，而由于偏置磁场的磁场衰减较快，其对待加工工件边缘部分的影响较大，对中心部分的影响较小，因此通过对应待加工工件边缘部分设置第一磁场轨道103，可以改善在待加工工件边缘部分沉积的磁性薄膜的均匀性，同时，通过对应待加工工件中心部分设置第二磁场轨道203，可以实现对靶材的全靶扫描，避免了扫描盲区的存在，从而提高了磁性薄膜的溅射均匀性。
优选地，第一磁场轨道103在自旋转中心O且沿其中一条半径方向发射出的直线L方向上的宽度相等。即，如图3所示，间距H1的宽度等于间距H2的宽度。这样，可以使位于间距H1和间距H2中磁畴数量基本相同，从而使受吸引力和受排斥力的磁性材料数量基本相同，进而使向待加工工件边缘移动的磁性材料和向待加工工件中心移动的磁性材料数量基本相同，从而提高了磁性薄膜的均匀性。
上述第一磁场轨道103在上述直线L方向上的宽度的取值范围优选在10～60mm，进一步优选在15mm～35mm。该宽度范围是根据磁场的衰减速度尽可能多地设置能够对磁性材料产生吸引力和排斥力的磁场轨道的对数，从而能够有效的提高磁性薄膜均匀性。
优选的，如图5b所示，第一圆弧101a的圆心角为角α；两段第二子磁极101b的另一端分别与旋转中心O之间的两条连线之间的夹角为角β；并且，角α与角β的比值优选大于3.5。这样，可以将第一磁场轨道103在圆周方向上的分布控制在一定的比例范围内，从而在对尺寸较大的待加工工件进行加工时，可以有效提高其边缘部分的磁性薄膜的均匀性。
进一步优选的，如图5d所示，上述角α接近于360度，此时沉积至待加工工件上的磁性薄膜的均匀性更佳。
需要说明的是，图5a-图5d示出的磁控管，其第二外磁极201的两端分别和第一外磁极101的两端相连形成一个闭合的外磁极。但是，本发明并不局限于此，在实际应用中，二者还可以相互独立。
第二种磁控管的结构如图5e和图5f所示，其与上述第一种磁控管的结构(如图5a～图5d)相比，其区别仅在于：在图4a示出的磁控管的基础上，第二外磁极201与第一外磁极101不相连；第二内磁极202与所述第一内磁极102不相连。而且，在第二外磁极201和第二内磁极202之间形成第二磁场轨道203，旋转中心O位于第二磁场轨道203内。
这样，第二外磁极201与第一外磁极101相互独立，从而二者的磁性没有关联；第二内磁极202与第一内磁极102相互独立，从而二者的磁性没有关联，由此，仅需要保证第二内磁极202和第二外磁极201的极性相反即可。
在实际应用中，第二外磁极201和第二内磁极202可以为曲线、直线、或者其它任意形状，只要能够将旋转中心O包围在第二磁场轨道203内即可。
如图5e和图5f所示的第二种磁控管可以使待加工工件边缘部分的磁性薄膜溅射均匀，同时可以实现全靶扫描。另外，如图5e和图5f所示的第二种磁控管可以应用在溅射电源为射频电源的情况。
采用本发明实施例提供的上述各个结构的磁控管进行溅射工艺获得的磁性薄膜均匀性均≤5％，甚至能达到3％，具有非常优良的薄膜均匀性。
综上所述，本发明实施例提供的磁控管，其可以补偿沉积至待加工工件的边缘区域和中心区域的磁性材料的数量差异，从而可以提高薄膜均匀性。而且，本发明的磁控管在用于非磁性薄膜的溅射沉积时，也能得到均匀性良好的薄膜。
作为另一个技术方案，本发明还提供一种磁控溅射腔室，用于沉积磁性薄膜，包括：本发明实施例提供的上述磁控管，该磁控管沿旋转中心进行旋转，用于对靶材表面进行扫描。并且，在磁控溅射腔室中还设置有用于形成 水平磁场的偏置磁场装置。
通过设置上述偏置磁场装置，可以在承载装置4上方形成水平磁场(磁场强度可以达到50～300Gs)，使沉积在待加工工件S表面上的磁性材料的磁畴沿水平方向排列，从而能够在磁畴排列方向上形成易磁化场，而在与磁畴排列方向垂直的方向上形成难磁化场，即，形成面内各向异性场，进而获得面内各向异性的磁性薄膜，适用于在尺寸较大的待加工工件(例如8寸或12寸晶片)上沉积磁性薄膜。
下面对本发明提供的磁控溅射腔室的具体实施方式进行详细描述。具体地，请参阅图6，磁控溅射腔室包括腔体1、磁控管组件2、靶材3、承载装置4、上屏蔽件5、下屏蔽件6和偏置磁场装置。其中，靶材3设置在腔体1内的顶部；承载装置4用于承载待加工工件S，其设置在腔体1内的底部，且与靶材3相对设置；上屏蔽件5固定在腔体1的侧壁顶部，且环绕腔体1侧壁的内侧设置；下屏蔽件6固定在腔体1侧壁的顶部且位于上屏蔽件5外侧，下屏蔽件6形成有环绕在承载装置4和腔体1侧壁之间的凹槽，上屏蔽件5和下屏蔽件6用于保护腔体1的侧壁和承载装置4以下的部分不被等离子体腐蚀。
磁控管组件2设置在靶材3的上方，包括：采用绝缘材料制成的固定架21和磁控管22。其中，固定架21为具有开口的壳体结构，且具有开口的一端固定在靶材3上；磁控管22设置在固定架21内，且固定在固定架21的顶部，并且在固定架21内还填充有用于冷却靶材3的去离子水23；磁控管22用于对靶材3的表面进行扫描，磁控管22围绕旋转中心进行自转，该旋转中心与靶材3的中心相对应。
偏置磁场装置通过螺丝8固定在下屏蔽件6的凹槽内，该偏置磁场装置包括：第一磁组和第二磁组，其中，第一磁组包括多个第一磁柱75和第二磁组包括多个第二磁柱76，且多个第一磁柱75围绕承载装置4排列形成圆弧 状，多个第二磁柱76围绕承载装置4排列形成圆弧状，并且多个第一磁柱75与多个第二磁柱76对称设置。而且，第一磁柱75和第二磁柱76的指向承载装置4的磁极不同具体地，第一磁柱75指向承载装置4的磁极为N极，而第二磁柱76指向承载装置4的磁极为S极。
本发明实施例提供的磁控溅射腔室，其通过采用本发明实施例提供的上述磁控管，可以避免因偏置磁场的存在而产生的待加工工件上形成的薄膜均匀性差的问题，从而可以提高薄膜均匀性。
作为另一个技术方案，本发明实施例还提供一种磁控溅射设备，其包括本发明实施例提供的上述磁控溅射腔室。
本发明实施例提供的磁控溅射设备，其通过采用本发明实施例提供的上述磁控溅射腔室，可以避免因偏置磁场的存在而产生的待加工工件上形成的薄膜均匀性差的问题，从而可以提高薄膜均匀性。
可以理解的是，以上实施方式仅仅是为了说明本发明的原理而采用的示例性实施方式，然而本发明并不局限于此。对于本领域内的普通技术人员而言，在不脱离本发明的精神和实质的情况下，可以做出各种变型和改进，这些变型和改进也视为本发明的保护范围。

Claims (16)

  1. 一种磁控管，其具有旋转中心，其特征在于，所述磁控管包括极性相反的第一外磁极和第一内磁极；其中，
    所述第一外磁极为环绕所述旋转中心的环形结构；
    所述第一内磁极位于所述第一外磁极的内侧，且在所述第一内磁极与所述第一外磁极之间形成第一磁场轨道；
    自所述旋转中心且沿其中一条半径方向发射出的直线至少连续两次穿过所述第一磁场轨道，且所述直线连续两次穿过的所述第一磁场轨道的磁场方向相反。
  2. 如权利要求1所述的磁控管，其特征在于，所述磁控管还包括极性相反的第二外磁极和第二内磁极；其中，
    在所述第二外磁极和所述第二内磁极之间形成第二磁场轨道，且所述旋转中心位于所述第二磁场轨道内；
    所述第一磁场轨道环绕所述第二磁场轨道设置。
  3. 如权利要求2所述的磁控管，其特征在于，所述第一外磁极包括圆弧形的第一子磁极和两段圆弧形的第二子磁极，其中，
    两段所述第二子磁极的一端分别与所述第一子磁极的两端连接，两段所述第二子磁极的另一端向靠近所述第一子磁极的中心延伸，且两段所述第二子磁极位于同一圆周，并且两段所述第二子磁极的另一端不相连；
    所述第一内磁极为圆弧形；
    所述第一子磁极、两段所述第二子磁极和所述第一内磁极的圆心均与所述旋转中心相重合。
  4. 如权利要求3所述的磁控管，其特征在于，所述第二外磁极为圆弧 形，且所述第二外磁极的两端分别与两段所述第二子磁极的另一端连接，该连接处位于所述旋转中心的一侧，且所述第二外磁极的靠近中间的一部分位于所述旋转中心的另一侧；
    所述第二内磁极设置在所述第一内磁极和所述第二外磁极之间。
  5. 如权利要求4所述的磁控管，其特征在于，所述第二内磁极与所述第一内磁极连接。
  6. 如权利要求3所述的磁控管，其特征在于，所述第二外磁极与所述第一外磁极不相连；
    所述第二内磁极与所述第一内磁极不相连。
  7. 如权利要求4所述的磁控管，其特征在于，所述第二内磁极的形状包括：V形、U形或者Y形，且V形或者U形的开口背离所述旋转中心。
  8. 如权利要求3所述的磁控管，其特征在于，所述第一子磁极的圆心角为角α；两段所述第二子磁极的另一端分别与所述旋转中心之间的两条连线之间的夹角为角β；
    所述角α与所述角β的比值大于3.5。
  9. 如权利要求1所述的磁控管，其特征在于，所述第一外磁极包括圆弧形的第三子磁极和圆弧形的第四子磁极，其中，
    所述第四子磁极位于所述第三子磁极的内侧，且二者的圆心均与所述旋转中心相重合，并且所述第四子磁极的两端分别与所述第三子磁极的两端连接；
    所述第一内磁极为圆弧形，且所述第一内磁极的圆心与所述旋转中心相重合。
  10. 如权利要求1所述的磁控管，其特征在于，所述直线穿过所述第一磁场轨道的次数为偶数。
  11. 如权利要求1所述的磁控管，其特征在于，所述第一磁场轨道在所述直线方向上的宽度相等。
  12. 如权利要求11所述的磁控管，其特征在于，所述第一磁场轨道的宽度的取值范围在10～60mm。
  13. 如权利要求12所述的磁控管，其特征在于，所述第一磁场轨道的宽度的取值范围在15mm～35mm。
  14. 如权利要求2所述的磁控管，其特征在于，所述第二磁场轨道的宽度的取值范围在10～60mm。
  15. 一种磁控溅射腔室，用于沉积磁性薄膜，其特征在于，包括权利要求1-14任意一项所述的磁控管，所述磁控管沿所述旋转中心进行旋转，用于对靶材表面进行扫描；
    并且，在所述磁控溅射腔室中还设置有用于形成水平磁场的偏置磁场装置。
  16. 一种磁控溅射设备，包括磁控溅射腔室，其特征在于，所述磁控溅射腔室采用权利要求15所述的磁控溅射腔室。
PCT/CN2017/107831 2016-10-31 2017-10-26 磁控管、磁控溅射腔室及磁控溅射设备 Ceased WO2018077216A1 (zh)

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Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109576663A (zh) * 2019-02-01 2019-04-05 云谷（固安）科技有限公司 磁控溅射装置以及磁控溅射方法
US12091752B2 (en) * 2021-03-18 2024-09-17 Taiwan Semiconductor Manufacturing Company, Ltd. Apparatus and method of manufacturing interconnect structures
KR102920678B1 (ko) * 2021-04-19 2026-01-29 어플라이드 머티어리얼스, 인코포레이티드 스퍼터 증착 소스, 마그네트론 스퍼터 캐소드, 및 기판 상에 재료를 증착하는 방법
CN114196931B (zh) * 2021-12-21 2023-09-08 北京北方华创微电子装备有限公司 半导体腔室
US12176191B2 (en) 2023-02-28 2024-12-24 Applied Materials, Inc. Magnetron design for improved bottom coverage and uniformity
CN116288225B (zh) * 2023-03-06 2024-12-17 深圳市矩阵多元科技有限公司 一种调整pvd磁控管旋转半径和平面靶电源功率的设备及方法
CN116426893B (zh) * 2023-06-13 2023-08-18 上海陛通半导体能源科技股份有限公司 磁控溅射设备及方法
CN118441251B (zh) * 2024-07-08 2024-10-11 西南应用磁学研究所(中国电子科技集团公司第九研究所) 一种非晶软磁薄膜材料、其制备方法及应用

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030201174A1 (en) * 2000-02-04 2003-10-30 Unaxis Deutschland Gmbh. Magnetron sputtering source and chamber therefor
CN1997768A (zh) * 2005-01-05 2007-07-11 应用材料股份有限公司 可展现较均匀沉积及降低旋转不对称性的多轨道磁控管
CN102789941A (zh) * 2011-05-18 2012-11-21 北京北方微电子基地设备工艺研究中心有限责任公司 一种磁控管、磁控管的制造方法及物理沉积室
CN104937134A (zh) * 2013-03-01 2015-09-23 应用材料公司 可配置的可变位置式封闭轨道磁电管

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100205682B1 (ko) * 1990-03-30 1999-07-01 조셉 제이. 스위니 피복두께의 균일성, 스텝 커버리지 및 스텝 커버리지의 균일성을 만드는 평탄 마그네트론 스퍼터링 공급원
ES2090161T3 (es) * 1990-03-30 1996-10-16 Applied Materials Inc Sistema de bombardeo ionico.
US5242566A (en) * 1990-04-23 1993-09-07 Applied Materials, Inc. Planar magnetron sputtering source enabling a controlled sputtering profile out to the target perimeter
JP2505724B2 (ja) * 1992-05-15 1996-06-12 アネルバ株式会社 マグネトロンスパッタリング装置
US6743340B2 (en) * 2002-02-05 2004-06-01 Applied Materials, Inc. Sputtering of aligned magnetic materials and magnetic dipole ring used therefor
JP2005002382A (ja) * 2003-06-10 2005-01-06 Applied Materials Inc マグネトロンユニット及びスパッタリング装置
US7686926B2 (en) * 2004-05-26 2010-03-30 Applied Materials, Inc. Multi-step process for forming a metal barrier in a sputter reactor
US20070108041A1 (en) * 2005-11-11 2007-05-17 Guo George X Magnetron source having increased usage life
US20120097534A1 (en) * 2008-08-29 2012-04-26 Ulvac, Inc. Magnetron sputtering cathode and film formation apparatus
CN102789938B (zh) * 2011-05-18 2016-06-08 北京北方微电子基地设备工艺研究中心有限责任公司 一种磁控管、磁控管的制造方法及物理沉积室
CN103887130B (zh) * 2012-12-21 2016-08-31 北京北方微电子基地设备工艺研究中心有限责任公司 磁控管以及应用该磁控管的磁控溅射设备
CN104746025A (zh) * 2013-12-27 2015-07-01 北京北方微电子基地设备工艺研究中心有限责任公司 溅射装置
CN105908147B (zh) * 2016-07-07 2017-07-21 重庆科技学院 非平衡磁控溅射电极及系统

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030201174A1 (en) * 2000-02-04 2003-10-30 Unaxis Deutschland Gmbh. Magnetron sputtering source and chamber therefor
CN1997768A (zh) * 2005-01-05 2007-07-11 应用材料股份有限公司 可展现较均匀沉积及降低旋转不对称性的多轨道磁控管
CN102789941A (zh) * 2011-05-18 2012-11-21 北京北方微电子基地设备工艺研究中心有限责任公司 一种磁控管、磁控管的制造方法及物理沉积室
CN104937134A (zh) * 2013-03-01 2015-09-23 应用材料公司 可配置的可变位置式封闭轨道磁电管

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