SG11201903713PA - Magnetron, magnetron sputtering chamber, and magnetron sputtering apparatus - Google Patents

Magnetron, magnetron sputtering chamber, and magnetron sputtering apparatus

Info

Publication number
SG11201903713PA
SG11201903713PA SG11201903713PA SG11201903713PA SG11201903713PA SG 11201903713P A SG11201903713P A SG 11201903713PA SG 11201903713P A SG11201903713P A SG 11201903713PA SG 11201903713P A SG11201903713P A SG 11201903713PA SG 11201903713P A SG11201903713P A SG 11201903713PA
Authority
SG
Singapore
Prior art keywords
magnetron
magnetic pole
magnetron sputtering
outer magnetic
succession
Prior art date
Application number
SG11201903713PA
Inventor
Yujie Yang
Tongwen Zhang
Original Assignee
Beijing Naura Microelectronics Equipment Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Beijing Naura Microelectronics Equipment Co Ltd filed Critical Beijing Naura Microelectronics Equipment Co Ltd
Publication of SG11201903713PA publication Critical patent/SG11201903713PA/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/345—Magnet arrangements in particular for cathodic sputtering apparatus
    • H01J37/3455—Movable magnets
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J25/00—Transit-time tubes, e.g. klystrons, travelling-wave tubes, magnetrons
    • H01J25/50—Magnetrons, i.e. tubes with a magnet system producing an H-field crossing the E-field
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering
    • H01J37/3408—Planar magnetron sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/345—Magnet arrangements in particular for cathodic sputtering apparatus
    • H01J37/3452—Magnet distribution
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/332—Coating

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Plasma Technology (AREA)

Abstract

The invention provides a magnetron, a magnetron sputtering chamber, and a magnetron sputtering apparatus. The magnetron includes a first outer magnetic pole and a first inner magnetic pole of opposite polarities. The first outer magnetic pole has an annular structure around a rotation center. The first inner magnetic pole is located on the inner side of the first outer magnetic pole, and a first magnetic field track is formed between the first inner magnetic pole and the first outer magnetic pole. A straight line starting from the rotation center and along one of the radial directions passes through the first magnetic field track at least twice in succession, and the magnetic-field directions at the two positions of the first magnetic field track that the straight line passes through twice in succession are opposite to each other. The magnetron provided by the invention can solve the technical problem in the existing technology that the uniformity of the thin film formed by sputtering is poor. Fig. 3.
SG11201903713PA 2016-10-31 2017-10-26 Magnetron, magnetron sputtering chamber, and magnetron sputtering apparatus SG11201903713PA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN201610930978.7A CN108004516B (en) 2016-10-31 2016-10-31 Magnetron sputtering chamber, magnetron sputtering device and magnetron
PCT/CN2017/107831 WO2018077216A1 (en) 2016-10-31 2017-10-26 Magnetron, magnetron sputtering chamber and magnetron sputtering device

Publications (1)

Publication Number Publication Date
SG11201903713PA true SG11201903713PA (en) 2019-05-30

Family

ID=62023101

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201903713PA SG11201903713PA (en) 2016-10-31 2017-10-26 Magnetron, magnetron sputtering chamber, and magnetron sputtering apparatus

Country Status (7)

Country Link
US (1) US10854434B2 (en)
JP (1) JP6793904B2 (en)
KR (1) KR102182477B1 (en)
CN (1) CN108004516B (en)
SG (1) SG11201903713PA (en)
TW (1) TWI658752B (en)
WO (1) WO2018077216A1 (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109576663A (en) * 2019-02-01 2019-04-05 云谷（固安）科技有限公司 Magnetic control sputtering device and magnetically controlled sputter method
US20220298634A1 (en) * 2021-03-18 2022-09-22 Taiwan Semiconductor Manufacturing Company Limited Apparatus and method of manufacturing interconnect structures
JP2024516382A (en) * 2021-04-19 2024-04-15 アプライド マテリアルズ インコーポレイテッド Sputter deposition source, magnetron sputter cathode, and method for depositing material onto a substrate - Patents.com
CN114196931B (en) * 2021-12-21 2023-09-08 北京北方华创微电子装备有限公司 Semiconductor chamber
CN116426893B (en) * 2023-06-13 2023-08-18 上海陛通半导体能源科技股份有限公司 Magnetron sputtering equipment and method

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100205682B1 (en) * 1990-03-30 1999-07-01 조셉 제이. 스위니 Planar magnetron sputtering source prodcing improved coating thickness uniformity step coverage and step coverage uniformity
ES2090161T3 (en) * 1990-03-30 1996-10-16 Applied Materials Inc IONIC BOMBING SYSTEM.
US5242566A (en) * 1990-04-23 1993-09-07 Applied Materials, Inc. Planar magnetron sputtering source enabling a controlled sputtering profile out to the target perimeter
JP2505724B2 (en) * 1992-05-15 1996-06-12 アネルバ株式会社 Magnetron sputtering equipment
DE10004824B4 (en) * 2000-02-04 2009-06-25 Oc Oerlikon Balzers Ag Method for producing substrates, magnetron source, sputter coating chamber and use of the method
US6743340B2 (en) * 2002-02-05 2004-06-01 Applied Materials, Inc. Sputtering of aligned magnetic materials and magnetic dipole ring used therefor
JP2005002382A (en) * 2003-06-10 2005-01-06 Applied Materials Inc Magnetron unit and sputtering system
US7686926B2 (en) * 2004-05-26 2010-03-30 Applied Materials, Inc. Multi-step process for forming a metal barrier in a sputter reactor
US7186319B2 (en) * 2005-01-05 2007-03-06 Applied Materials, Inc. Multi-track magnetron exhibiting more uniform deposition and reduced rotational asymmetry
US20070108041A1 (en) * 2005-11-11 2007-05-17 Guo George X Magnetron source having increased usage life
JP5222945B2 (en) * 2008-08-29 2013-06-26 株式会社アルバック Magnetron sputtering cathode and film forming apparatus
CN102789941B (en) * 2011-05-18 2015-07-08 北京北方微电子基地设备工艺研究中心有限责任公司 Magnetron, manufacturing method of magnetron and physical deposition room
CN102789938B (en) * 2011-05-18 2016-06-08 北京北方微电子基地设备工艺研究中心有限责任公司 The manufacture method of a kind of magnetron, magnetron and physical deposition room
CN103887130B (en) * 2012-12-21 2016-08-31 北京北方微电子基地设备工艺研究中心有限责任公司 Magnetron and apply the magnetron sputtering apparatus of this magnetron
US9812303B2 (en) * 2013-03-01 2017-11-07 Applied Materials, Inc. Configurable variable position closed track magnetron
CN104746025A (en) * 2013-12-27 2015-07-01 北京北方微电子基地设备工艺研究中心有限责任公司 Sputtering apparatus
CN105908147B (en) * 2016-07-07 2017-07-21 重庆科技学院 Non-balance magnetically controlled sputter electrode and system

Also Published As

Publication number Publication date
JP2019535899A (en) 2019-12-12
WO2018077216A1 (en) 2018-05-03
CN108004516A (en) 2018-05-08
JP6793904B2 (en) 2020-12-02
CN108004516B (en) 2020-06-19
TWI658752B (en) 2019-05-01
KR102182477B1 (en) 2020-11-24
TW201831056A (en) 2018-08-16
KR20190069577A (en) 2019-06-19
US20190244796A1 (en) 2019-08-08
US10854434B2 (en) 2020-12-01

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