ES2090161T3 - Sistema de bombardeo ionico. - Google Patents

Sistema de bombardeo ionico.

Info

Publication number
ES2090161T3
ES2090161T3 ES91105035T ES91105035T ES2090161T3 ES 2090161 T3 ES2090161 T3 ES 2090161T3 ES 91105035 T ES91105035 T ES 91105035T ES 91105035 T ES91105035 T ES 91105035T ES 2090161 T3 ES2090161 T3 ES 2090161T3
Authority
ES
Spain
Prior art keywords
step coverage
excellent step
polar
spray
uniform coating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
ES91105035T
Other languages
English (en)
Inventor
Avi Tepman
Norman William Parker
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Materials Inc
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Application granted granted Critical
Publication of ES2090161T3 publication Critical patent/ES2090161T3/es
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3464—Operating strategies
    • H01J37/347—Thickness uniformity of coated layers or desired profile of target erosion
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering
    • H01J37/3408—Planar magnetron sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/345—Magnet arrangements in particular for cathodic sputtering apparatus
    • H01J37/3455—Movable magnets

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Electron Sources, Ion Sources (AREA)

Abstract

UN SISTEMA DE PULVERIZACION TIENE UNA FUENTE DE PULVERIZACION DE MAGNETRONES PLANAS (90) QUE TIENE UN PAR DE PIEZAS POLARES (91, 92) CONFIGURADAS PARA PRODUCIR UN RECUBRIMIENTO UNIFORME, UNA COBERTURA DEL ESCALON EXCELENTE Y UNA UNIFORMIDAD DE COBERTURA DEL ESCALON EXCELENTE DE UNA PLAQUITA (42). ENTRE LAS DOS PIEZAS POLARES (91, 92) HAY UN HUECO (912) DENTRO DEL CUAL EL CAMPO MAGNETICO Y EL CAMPO ELECTRICO PRODUCEN UNA TRAMPA DE ELECTRONES. LA FORMA DEL HUECO PRODUCE UNA PROFUNDIDAD DE PERFIL PULVERIZADOR (97, 98) EN EL BLANCO QUE DA COMO RESULTADO UN RECUBRIMIENTO UNIFORME, UNA COBERTURA DEL ESCALON EXCELENTE Y UNA UNIFORMIDAD DE COBERTURA DEL ESCALON EXCELENTE. LA PIEZA POLAR EXTERIOR TIENE FORMA DE TAZON EN SECCION TRANSVERSAL CON UN REBORDE SUSTANCIALMENTE COPLANAR CON UNA PIEZA POLAR INTERIOR PLANAR.
ES91105035T 1990-03-30 1991-03-28 Sistema de bombardeo ionico. Expired - Lifetime ES2090161T3 (es)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US50239190A 1990-03-30 1990-03-30
US51271990A 1990-04-23 1990-04-23

Publications (1)

Publication Number Publication Date
ES2090161T3 true ES2090161T3 (es) 1996-10-16

Family

ID=27054142

Family Applications (1)

Application Number Title Priority Date Filing Date
ES91105035T Expired - Lifetime ES2090161T3 (es) 1990-03-30 1991-03-28 Sistema de bombardeo ionico.

Country Status (4)

Country Link
EP (1) EP0451642B1 (es)
JP (2) JP2934042B2 (es)
DE (1) DE69121446T2 (es)
ES (1) ES2090161T3 (es)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5188717A (en) * 1991-09-12 1993-02-23 Novellus Systems, Inc. Sweeping method and magnet track apparatus for magnetron sputtering
US5314597A (en) * 1992-03-20 1994-05-24 Varian Associates, Inc. Sputtering apparatus with a magnet array having a geometry for a specified target erosion profile
US5374343A (en) * 1992-05-15 1994-12-20 Anelva Corporation Magnetron cathode assembly
US5431799A (en) * 1993-10-29 1995-07-11 Applied Materials, Inc. Collimation hardware with RF bias rings to enhance sputter and/or substrate cavity ion generation efficiency
WO1996021750A1 (en) * 1995-01-12 1996-07-18 The Boc Group, Inc. Rotatable magnetron with curved or segmented end magnets
US5907220A (en) * 1996-03-13 1999-05-25 Applied Materials, Inc. Magnetron for low pressure full face erosion
WO1998037569A1 (en) * 1997-02-24 1998-08-27 Novellus Systems, Inc. Magnetic circuit for magnetron sputtering
US5876574A (en) * 1997-04-23 1999-03-02 Applied Materials, Inc. Magnet design for a sputtering chamber
US5795451A (en) * 1997-06-12 1998-08-18 Read-Rite Corporation Sputtering apparatus with a rotating magnet array
KR100345924B1 (ko) * 2000-01-24 2002-07-27 한전건 평판 마그네트론 스퍼터링 장치
KR100439474B1 (ko) * 2001-09-12 2004-07-09 삼성전자주식회사 스퍼터링 장치
DE10234858A1 (de) * 2002-07-31 2004-02-12 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Einrichtung zur Erzeugung einer Magnetron-Entladung
EP1710829A1 (de) * 2005-04-05 2006-10-11 Applied Films GmbH & Co. KG Magnetanordnung für ein Planar-Magnetron
CN106609352B (zh) * 2015-10-27 2019-04-23 北京北方华创微电子装备有限公司 溅射装置及其操作方法
CN108004516B (zh) * 2016-10-31 2020-06-19 北京北方华创微电子装备有限公司 磁控溅射腔室、磁控溅射设备以及磁控管

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2707144A1 (de) * 1976-02-19 1977-08-25 Sloan Technology Corp Kathodenzerstaeubungsvorrichtung
JPS60224775A (ja) * 1984-04-20 1985-11-09 Fujitsu Ltd スパツタ装置
JPS6260866A (ja) * 1985-08-02 1987-03-17 Fujitsu Ltd マグネトロンスパツタ装置
DE3619194A1 (de) * 1986-06-06 1987-12-10 Leybold Heraeus Gmbh & Co Kg Magnetron-zerstaeubungskatode fuer vakuum-beschichtungsanlagen
JP2627651B2 (ja) * 1988-10-17 1997-07-09 アネルバ株式会社 マグネトロンスパッタリング装置

Also Published As

Publication number Publication date
EP0451642A3 (en) 1992-02-26
EP0451642A2 (en) 1991-10-16
DE69121446D1 (de) 1996-09-26
JPH0995781A (ja) 1997-04-08
EP0451642B1 (en) 1996-08-21
JP3535305B2 (ja) 2004-06-07
DE69121446T2 (de) 1997-02-20
JP2934042B2 (ja) 1999-08-16
JPH04228567A (ja) 1992-08-18

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