WO2018077180A1 - 磁性薄膜叠层结构的沉积方法、磁性薄膜叠层结构及微电感器件 - Google Patents

磁性薄膜叠层结构的沉积方法、磁性薄膜叠层结构及微电感器件 Download PDF

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Publication number
WO2018077180A1
WO2018077180A1 PCT/CN2017/107630 CN2017107630W WO2018077180A1 WO 2018077180 A1 WO2018077180 A1 WO 2018077180A1 CN 2017107630 W CN2017107630 W CN 2017107630W WO 2018077180 A1 WO2018077180 A1 WO 2018077180A1
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Prior art keywords
magnetic
thin film
layer
magnetic thin
depositing
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PCT/CN2017/107630
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English (en)
French (fr)
Inventor
杨玉杰
丁培军
张同文
夏威
王厚工
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Beijing Naura Microelectronics Equipment Co Ltd
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Beijing Naura Microelectronics Equipment Co Ltd
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Priority to JP2019522894A priority Critical patent/JP6901557B2/ja
Priority to KR1020197013887A priority patent/KR102159893B1/ko
Priority to SG11201903536VA priority patent/SG11201903536VA/en
Publication of WO2018077180A1 publication Critical patent/WO2018077180A1/zh
Priority to US16/386,750 priority patent/US11699541B2/en
Anticipated expiration legal-status Critical
Priority to US18/324,705 priority patent/US12424363B2/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F3/00—Cores, Yokes, or armatures
    • H01F3/02—Cores, Yokes, or armatures made from sheets
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/26—Thin magnetic films, e.g. of one-domain structure characterised by the substrate or intermediate layers
    • H01F10/30—Thin magnetic films, e.g. of one-domain structure characterised by the substrate or intermediate layers characterised by the composition of the intermediate layers, e.g. seed, buffer, template, diffusion preventing, cap layers
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3485—Sputtering using pulsed power to the target
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F17/00—Fixed inductances of the signal type
    • H01F17/0006—Printed inductances
    • H01F17/0013—Printed inductances with stacked layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F17/00—Fixed inductances of the signal type
    • H01F17/04—Fixed inductances of the signal type with magnetic core
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F27/00—Details of transformers or inductances, in general
    • H01F27/24—Magnetic cores
    • H01F27/26—Fastening parts of the core together; Fastening or mounting the core on casing or support
    • H01F27/263—Fastening parts of the core together
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
    • H01F41/02—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for manufacturing cores, coils, or magnets
    • H01F41/0206—Manufacturing of magnetic cores by mechanical means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
    • H01F41/14—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
    • H01F41/14—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates
    • H01F41/18—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates by cathode sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
    • H01F41/32—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying conductive, insulating or magnetic material on a magnetic film, specially adapted for a thin magnetic film
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/08—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers
    • H01F10/10—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition
    • H01F10/12—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition being metals or alloys
    • H01F10/14—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition being metals or alloys containing iron or nickel

Definitions

  • the present invention relates to the field of microelectronics, and in particular to a method for depositing a magnetic thin film stacked structure, a magnetic thin film stacked structure, and a micro-inductive device.
  • the integrated circuit manufacturing process can significantly reduce the size of the processor, but there are still some core components such as integrated inductors, noise suppressors, etc., which face many problems in terms of high frequency, miniaturization, and integration. difficult.
  • soft magnetic thin film materials having high magnetization, high magnetic permeability, high resonance frequency, and high electrical resistivity have attracted more and more attention.
  • Fig. 1 is a structural view showing a conventional magnetic film laminated structure. As shown in FIG. 1, the magnetic film laminate structure is formed by alternately providing an isolation layer and a magnetic film layer, wherein an isolation layer is directly deposited on the workpiece to be processed.
  • the magnetic film layer since the magnetic film layer has a large tensile stress and is brittle, the magnetic thin film laminated structure obtained from the magnetic film layer is not easily made thick, and the total thickness of the magnetic thin film laminated structure prepared as described above is More than 500 nm, due to the large tensile stress and brittleness of the magnetic film layer, the tensile stress of the laminated structure of the magnetic film is correspondingly large, and thus the above-mentioned magnetic film laminated structure is detached from the attached workpiece (or cracked). The phenomenon of shedding), so it is not suitable for the preparation of micro-inductive devices.
  • the applied frequency range of the obtained inductive device is usually only 1 to 5 GHz, and cannot cover the frequency range of MHz.
  • the present invention aims to at least solve one of the technical problems existing in the prior art, and proposes a deposition method of a magnetic thin film laminated structure, a magnetic thin film laminated structure, and a micro-inductive device, the deposition of the magnetic thin film laminated structure.
  • the method can increase the total thickness of the magnetic film laminate structure and broaden the application frequency of the inductor device prepared therefrom It can be applied to large-sized workpieces to make micro-inductive devices.
  • a method of depositing a magnetic film laminate structure comprising the steps of: S1, depositing an adhesion layer on a workpiece to be processed; S2, depositing a magnetic/isolation unit on the adhesion layer
  • the magnetic/isolation unit includes at least one pair of magnetic film layers and an isolation layer that are alternately disposed.
  • the magnetic film layer is deposited on the adhesion layer, and the isolation layer is deposited on the magnetic film layer.
  • step S1 and the step S2 are alternately performed at least twice.
  • the method for depositing a magnetic thin film stacked structure further includes the step S3 of depositing a layer of the magnetic film on the magnetic/isolation unit.
  • the step S1, the step S2, and the step S3 are alternately performed at least twice.
  • the adhesive layer is made of a material having compressive stress.
  • the material having compressive stress comprises a Ta film, a TaN film or a TiN film.
  • the adhesion layer is deposited by a sputtering process, in which the target is electrically connected to a pulsed DC power source, and the sputtering power of the pulsed DC power supply output is less than or equal to 15 kW.
  • the target is electrically connected to the RF power source, the RF power output has a sputtering power less than or equal to 3 kW; or the target is electrically connected to the DC power source, and the DC power output has a sputtering power of less than or equal to 20 kW.
  • the sputtering power output of the pulsed DC power source ranges from 3 to 10 kW; or in the case where the target is electrically connected to the RF power source
  • the sputtering power output of the RF power source ranges from 0.3 to 1.5 kW; or in the case where the target is electrically connected to a DC power source, the sputtering power output of the DC power source ranges from 15 ⁇ 19kw.
  • the adhesion layer is deposited by a sputtering process, and the process pressure of the sputtering process is less than or equal to 5 mTorr.
  • the process pressure of the sputtering process ranges from 0.5 to 2 mTorr.
  • the magnetic film layer is made of a material having soft magnetic properties.
  • the soft magnetic material comprises a NiFe permalloy material, CoZrTa amorphous material, Co-based material, Fe-based material or Ni-based material.
  • the magnetic film layer is deposited by a sputtering process, in which the target is electrically connected to the excitation power source; the sputtering power output of the excitation power source is less than or equal to 2 kw; The process pressure of the sputtering process is less than or equal to 5 mTorr.
  • the sputtering power has a value ranging from 0.5 to 1.5 kW; and the process pressure of the sputtering process ranges from 0.3 to 3 mTorr.
  • a horizontal magnetic field is formed in the vicinity of the wafer for depositing the magnetic thin film laminated structure by using a bias magnetic field device for causing the deposited magnetic film layer to have In-plane anisotropy.
  • the isolation layer is made of a non-magnetic material.
  • the non-magnetic material comprises Cu, Ta, SiO 2 or TiO 2 .
  • the isolation layer is deposited by a sputtering process, in which the target is electrically connected to the excitation power source; the sputtering power output of the excitation power source is less than or equal to 5 kW; The process pressure of the sputtering process is less than or equal to 20 mTorr.
  • the sputtering power output of the excitation power source ranges from 1 to 2 kw; and the process pressure of the sputtering process ranges from 9 to 12 mTorr.
  • the thickness of the adhesive layer ranges from 50 to 300 nm; the thickness of the magnetic film ranges from 30 to 200 nm; and the thickness of the isolation layer ranges from 3 to 10 nm.
  • the thickness of the adhesive layer ranges from 80 to 200 nm; the thickness of the magnetic film ranges from 50 to 150 nm; and the thickness of the isolation layer ranges from 5 to 8 nm.
  • the present invention also provides a magnetic film laminate structure comprising: an adhesion layer; a magnetic/isolation unit; the magnetic/isolation unit comprising at least one pair of magnetic film layers and an isolation layer disposed alternately.
  • the magnetic film layer is located on the adhesive layer, and the isolation layer is located on the magnetic film layer.
  • the magnetic film laminate structure comprises at least two magnetic film lamination units, wherein each of the magnetic film lamination units comprises the adhesion layer and the Magnetic / isolation unit.
  • a magnetic layer of the magnetic film is further disposed on the top layer of the magnetic film laminate structure.
  • the magnetic film laminate structure comprises at least two magnetic film lamination units, wherein each of the magnetic film lamination units comprises the adhesion layer, the magnetic/isolation unit and the magnetic film layer .
  • the total thickness of the magnetic thin film laminated structure ranges from 400 to 3000 nm.
  • the number of pairs of the magnetic film layer and the isolation layer which are alternately arranged is 2 to 50 pairs.
  • the thickness of the adhesion layer ranges from 3 to 50 nm.
  • the present invention provides a micro-inductive device comprising a magnetic core, which is prepared by using the magnetic thin film laminated structure according to any one of the foregoing aspects of the present invention, and the frequency of application of the micro-inductive device The value ranges from 100 MHz to 5 GHz.
  • the magnetic film stacking structure deposition method provided by the present invention deposits a magnetic/isolation unit on the adhesion layer, which can improve the tensile stress of the magnetic film laminate structure due to the tensile stress of the magnetic film layer. Phenomenon, thereby making it possible to obtain a magnetic thin film laminated structure having a large total thickness, thereby broadening the application frequency range of the inductive device prepared therefrom; in addition, due to the stress adjustment effect of the adhesive layer on the magnetic thin film laminated structure, it can be large A magnetic thin film laminated structure having a large thickness is prepared on the workpiece to be processed, and the cracking and falling off phenomenon can be avoided.
  • the magnetic thin film laminated structure provided by the invention has a magnetic/isolation unit deposited on the adhesive layer, the adhesive layer can adjust the tensile stress of the magnetic film layer, thereby adjusting the stress of the magnetic film laminated structure, thereby making the adhesion
  • the total thickness of the magnetic thin film laminate structure of the layer is increased, thereby broadening the application frequency range of the inductor device prepared therefrom.
  • the micro-inductive device provided by the present invention comprises a magnetic core prepared by the magnetic thin film laminated structure provided by the present invention, and the total thickness of the magnetic thin film laminated structure is increased, thereby broadening the application frequency range of the inductive device, for example,
  • the application frequency of the micro-inductive device can range from 100 MHz to 5 GHz.
  • FIG. 1 is a structural view of a conventional magnetic film laminated structure
  • FIG. 2 is a flow chart showing a method of depositing a magnetic thin film stacked structure according to a first embodiment of the present invention
  • FIG. 3 is a structural view showing a laminated structure of a magnetic thin film obtained by a deposition method of a magnetic thin film laminated structure according to a first embodiment of the present invention
  • Fig. 4 is a structural view showing a laminated structure of a magnetic thin film obtained by a deposition method of a magnetic thin film laminated structure according to a second embodiment of the present invention.
  • a method for depositing a magnetic thin film laminated structure includes the following steps:
  • an adhesive layer 1 is deposited on the workpiece to be processed.
  • the workpiece to be processed includes a workpiece to be processed on which a film is not deposited on the surface, and a workpiece to be processed on which a magnetic film layer 2 or an isolating layer 3 is deposited.
  • the layer in contact with the adhesion layer 1 in the magnetic/isolation unit is the magnetic film layer 2, and accordingly, the separation layer 3 is deposited on the magnetic film layer 2.
  • the spacer layer 3 is made of a non-magnetically permeable material comprising Cu, Ta, SiO 2 or TiO 2 .
  • the isolation layer 3 can not only isolate the adjacent two magnetic film layers 2, but also reduce the magnetic flux skin effect, and can also adjust the resistivity of the magnetic film laminate structure, reduce the eddy current loss, and improve the magnetic film laminate. The role of high frequency performance of the structure.
  • the magnetic film layer 2 may be deposited on the adhesion layer 1, and then the isolation layer 3 is deposited on the magnetic film layer 2, so that the magnetic film layer 2 and the isolation layer 3 are alternately disposed; Further, by making the topmost layer the isolation layer 3, the electrical resistivity of the magnetic thin film laminated structure can be further improved.
  • the deposition method of the magnetic thin film laminated structure provided by the present invention may further comprise the following steps:
  • the magnetic film layer 2 and the spacer layer 3 have a pair of pairs of 4 pairs, and a magnetic film layer 2 is further deposited on the uppermost spacer layer 3. That is, the total number of layers of the magnetic film layer 2 is 5 layers; the total number of layers of the separator 3 is 4 layers.
  • step S3 may be omitted, that is, the total number of layers of the magnetic film layer 2 and the isolation layer 3 is equal.
  • the excessive tensile stress of the magnetic thin film laminated structure caused by the tensile stress of the magnetic film layer 2 can be improved, and a magnetic thin film laminated structure having a large total thickness can be obtained, and the widened structure can be broadened.
  • the applicable frequency range of the fabricated inductive device can be improved.
  • the adhesion layer 1 can be made of a material having compressive stress such as a Ta film, a TaN film, or a TiN film to function to adjust the tensile stress of the magnetic film laminate structure.
  • the performance of the magnetic thin film laminated structure is determined by the magnetic film layer 2 and the insulating layer 3 together.
  • the magnetic film layer 2 forms a micro-inductive magnetic core to increase the magnetic flux.
  • the isolation layer 3 functions to isolate the adjacent two magnetic film layers 2, and adjusts the resistivity of the magnetic film layer 2, reduces eddy current loss, and improves high frequency performance.
  • the overall thickness of the magnetic film layer 2 in the magnetic film laminated structure can be further increased, thereby increasing magnetic properties, and thus, in practical application.
  • the magnetic properties of the desired magnetic film laminate structure can be matched.
  • the deposition method of the adhesion layer 1 will be described in detail below.
  • the adhesion layer 1 is deposited using a sputtering process.
  • the apparatus for performing the sputtering process mainly comprises a reaction chamber, a target, a base for carrying the substrate, and a pulsed DC power source, wherein the target is disposed at the top of the reaction chamber, and the base is provided It is placed in the reaction chamber and is located below the target.
  • the vertical spacing between the target and the susceptor ie, the target spacing
  • the target spacing is 30-90 mm.
  • the target is electrically connected to the pulsed DC power source for loading sputtering power to the target to excite the process gas in the reaction chamber to form a plasma, and bombard the target material to sputter the target material and deposit it on the surface of the wafer. To form a film. Due to the limited temperature range of the photoresist used in the process, in the process integration, it is easier to control the temperature of the wafer and the photoresist thereon by using lower sputtering power, and the target and the target are used.
  • the pulsed DC power source is electrically connected, and the adhesion layer 1 having a superior stress adjustment effect can be obtained at the lower sputtering power.
  • the parameters of the above sputtering process are as follows: the sputtering power of the pulsed DC power supply output is less than or equal to 15 kw; and the process pressure of the sputtering process is less than or equal to 5 mTorr.
  • the sputtering power output of the pulsed DC power supply ranges from 3 to 10 kw.
  • the process pressure of the sputtering process ranges from 0.5 to 2 mTorr; the thickness of the sputtering ranges from 80 to 200 nm.
  • the target may also be electrically connected to a radio frequency power source, and the output power of the radio frequency power source is less than or equal to 3 kw; or the target may be electrically connected to the DC power source, and the DC power output is The sputtering power is less than or equal to 20 kW.
  • the sputtering power output of the RF power source ranges from 0.3 to 1.5 kW.
  • the sputtering power output of the DC power source may range from 15 to 19 kW.
  • the magnetic film layer 2 may be deposited using a sputtering process.
  • the apparatus for performing the sputtering process mainly includes a reaction chamber, a target, a susceptor for carrying the substrate, a sputtering power source, and a bias magnetic field device, wherein the target is disposed at the top of the reaction chamber, and the pedestal is disposed at The reaction chamber is located below the target, and the target is electrically connected to the sputtering power source, and the sputtering power source is used to apply sputtering power to the target to excite the process gas in the reaction chamber to form a plasma and bombard The target material is sputtered out of the target and deposited on the surface of the adhesive layer 1, thereby forming the magnetic film layer 2.
  • the bias magnetic field device is disposed in the reaction chamber and includes two sets of magnets of opposite polarities, and the two sets of magnet sets are respectively disposed on opposite sides of the base.
  • the bias magnetic field device can form a horizontal magnetic field (parallel to the surface of the wafer) in a region close to the pedestal in the reaction chamber, and the magnetic field strength of the horizontal magnetic field can reach 50 to 300 Gs, which makes When the sputtering process is performed, the magnetic domains of the magnetic material deposited on the wafer are arranged in the horizontal direction, so that an easy magnetization field can be formed in the direction in which the magnetic domains are arranged, and hard magnetization is formed in a direction perpendicular to the direction in which the magnetic domains are arranged.
  • the field that is, the in-plane anisotropy field is formed, thereby obtaining an in-plane anisotropy magnetic thin film laminated structure for use in fabricating a micro-inductive device.
  • the parameters of the above sputtering process are as follows: the sputtering power of the excitation power source output is less than or equal to 2 kw; and the process pressure of the sputtering process is less than or equal to 5 mTorr.
  • the sputtering power of the excitation power output ranges from 0.5 to 1.5 kW; the process pressure of the sputtering process ranges from 0.3 to 3mTorr.
  • the magnetic film layer 2 is made of a material having soft magnetic properties, such as high saturation magnetization (Ms), low residual magnetization (Mr), high initial magnetic permeability ( ⁇ i), and maximum magnetic permeability ( ⁇ max).
  • Ms high saturation magnetization
  • Mr low residual magnetization
  • ⁇ i high initial magnetic permeability
  • ⁇ max maximum magnetic permeability
  • the soft magnetic material comprises a NiFe permalloy material, a CoZrTa amorphous material, a Co-based material, a Fe-based material, or a Ni-based material.
  • the NiFe permalloy material may be, for example, Ni 80 Fe 20 , Ni 45 Fe 55 or Ni 81 Fe 19 or the like.
  • the CoZrTa amorphous material may be, for example, Co 91.5 Zr 4.0 Ta 4.5 or the like.
  • the Co-based material, the Fe-based material, or the Ni-based material may be, for example, Co 60 Fe 40 , NiFeCr, or the like.
  • the isolation layer 3 may be deposited using a sputtering process.
  • the apparatus for performing the sputtering process mainly comprises a reaction chamber, a target, a susceptor for carrying the substrate, and a sputtering power source, wherein the target is disposed at the top of the reaction chamber, and the pedestal is disposed in the reaction chamber, and Located below the target. Moreover, the target is electrically connected to the sputtering power source.
  • the sputtering power output has a sputtering power of less than or equal to 5 kw; and the sputtering process has a process pressure of less than or equal to 20 mTorr.
  • the sputtering power output of the sputtering power source ranges from 1 to 2 kw; and the sputtering process process pressure ranges from 9 to 12 mTorr.
  • the thickness of the adhesion layer 1 ranges from 50 to 300 nm.
  • the thickness of the magnetic film layer 2 ranges from 30 to 200 nm.
  • the thickness of the isolation layer 3 ranges from 3 to 10 nm.
  • the thickness of the adhesion layer 1 ranges from 80 to 200 nm.
  • the thickness of the magnetic film layer 2 ranges from 50 to 150 nm.
  • the thickness of the spacer layer 3 ranges from 5 to 8 nm.
  • Fig. 4 is a structural view showing a laminated structure of a magnetic thin film obtained by a deposition method of a magnetic thin film laminated structure according to a second embodiment of the present invention.
  • the deposition method provided in this embodiment is different from the first embodiment described above in that step S1 and step S2 are alternately performed at least twice to obtain a magnetic thin film laminated structure different from that in the first embodiment. Structure.
  • the magnetic film laminate structure obtained by the deposition method provided by the embodiment includes M magnetic film lamination units, that is, the first magnetic film lamination unit 100, the second magnetic film lamination unit 200, ..., the Mth magnetic thin film lamination unit, M is an integer greater than one.
  • M is an integer greater than one.
  • an adhesion layer 1 and a magnetic/isolation unit are included.
  • the magnetic/isolation unit comprises at least one pair of magnetic film layers 2 and the isolation layer 3 which are alternately arranged.
  • the layer in contact with the adhesion layer 1 is a magnetic film layer 2
  • An isolation layer 3 is provided on the magnetic film layer 2.
  • the thickness of the magnetic film laminate structure is constant, if the number of pairs of the magnetic film layer 2 and the isolation layer 3 is too large, it indicates that the number of times of preparing the magnetic film layer 2 and the isolation layer 3 is too large, thereby the entire process equipment system. In terms of the number of processes, the process pressure of the system is large, so that the system capacity per unit time is reduced, resulting in an increase in the production cost of the system; on the other hand, if the pair of the isolation layer 3 and the magnetic film layer 2 If the number is too small, the thickness of the single layer of each of the adhesion layer 1, the magnetic film layer 2, and the separation layer 3 involved in the magnetic film laminate structure is large, which causes the performance of the magnetic film laminate structure to be impaired.
  • the magnetic film laminate structure it is necessary to comprehensively consider the system capacity and the performance of the magnetic film laminate structure to optimize the total thickness of the magnetic film laminate structure and the thickness of each layer, especially for the isolation layer 3 and the magnetic film layer 2.
  • Logarithmic optimization Preferably, the number of pairs of the isolation layer 3 and the magnetic film layer 2 is 2 to 50 pairs, and the logarithmic range can satisfy the performance requirements of the magnetic thin film laminated structure and ensure good system productivity.
  • the total thickness of the magnetic thin film laminated structure can be further increased, thereby widening the application frequency range of the inductive device prepared therefrom.
  • the range of the total thickness of the above magnetic thin film laminated structure is At 400 to 3000 nm.
  • the application frequency of the above magnetic thin film laminated structure ranges from 100 MHz to 5 GHz.
  • the sputtering thickness of the adhesion layer 1 ranges from 3 to 50 nm.
  • the thickness of the magnetic film layer 2 and the separation layer 3 is the same as that of the first embodiment described above. Further, other process parameters for preparing the adhesion layer 1, the magnetic film layer 2, and the separation layer 3 are the same as those of the first embodiment described above.
  • each time step S2 is performed a magnetic/isolation unit is deposited, that is, between adjacent two adhesive layers 1, having a single-layer magnetic/isolation unit.
  • a magnetic/isolation unit is deposited, that is, between adjacent two adhesive layers 1, having a single-layer magnetic/isolation unit.
  • the present invention is not limited thereto. In practical applications, two or more layers of magnetic/isolation units may be deposited for each step S2, that is, between adjacent two layers of adhesion layers 1 having continuous settings. Two or more magnetic/isolated units.
  • each of the magnetic film lamination units includes the adhesion layer 1 and the magnetic/isolation unit.
  • the present invention is not limited thereto, and in practical use, each of the magnetic film lamination units includes an adhesion layer 1, a magnetic/isolation unit, and a magnetic film layer 2.
  • the present invention also provides a magnetic film laminate structure including an adhesion layer 1 and a magnetic/isolation unit.
  • the magnetic/isolation unit comprises at least one pair of magnetic film layers 2 and isolation layers 3 which are alternately arranged.
  • the magnetic film layer 2 is on the adhesion layer, and the isolation layer 3 is on the magnetic film layer 2.
  • a magnetic film layer 2 is further disposed on the top layer of the magnetic thin film laminated structure (including at least one pair of magnetic film layers 2 and the spacer layer 3 which are alternately disposed).
  • the magnetic thin film laminated structure includes M magnetic thin film lamination units, that is, the first magnetic thin film lamination unit 100, the second magnetic thin film lamination unit 200, ..., the Mth In the magnetic film lamination unit, M is an integer greater than 1.
  • M is an integer greater than 1.
  • an adhesion layer 1 and a magnetic/isolation unit are included.
  • the magnetic/isolation unit comprises at least one pair of magnetic film layers 2 and the isolation layer 3 which are alternately arranged.
  • the magnetic film layer 2 is located on the adhesion layer
  • the isolation layer 3 is located on the magnetic film layer 2.
  • the number of pairs of the separator 3 and the magnetic film layer 2 is 2 to 50 pairs.
  • the sputtering thickness of the adhesion layer 1 ranges from 3 to 50 nm.
  • the total thickness of the magnetic thin film laminated structure can be further increased, thereby widening the range of application frequency of the inductive device prepared therefrom.
  • the total thickness of the above magnetic thin film laminated structure ranges from 400 to 3000 nm.
  • the application frequency of the inductive device prepared by the above magnetic thin film laminated structure ranges from 100 MHz to 5 GHz.
  • a single layer of magnetic/isolation unit is provided between the adjacent two adhesive layers 1.
  • the present invention is not limited thereto, and in practical applications, two or more magnetic/isolated units that are continuously disposed may be provided between adjacent two adhesive layers 1.
  • each of the magnetic film lamination units includes the adhesion layer 1 and the magnetic/isolation unit.
  • each of the magnetic film lamination units may further include an adhesion layer 1, a magnetic/isolation unit, and a magnetic film layer 2.
  • the magnetic film stacking structure deposition method provided by the present invention deposits a magnetic/isolation unit on the adhesion layer, and the adhesion layer can adjust the tensile stress of the magnetic film laminate structure caused by the tensile stress of the magnetic film layer to be excessive Phenomenon, thereby making it possible to obtain a magnetic thin film laminated structure having a large total thickness, broadening the application frequency range of the inductive device prepared therefrom; and, in addition, due to the stress adjustment effect of the adhesive layer on the magnetic thin film laminated structure, it can be in a large size A magnetic thin film laminated structure having a large thickness is prepared on the workpiece to avoid cracking and falling off.
  • the magnetic thin film laminated structure provided by the embodiment of the present invention has a magnetic/isolation unit deposited on the adhesive layer 1 , and the adhesive layer 1 can adjust the tensile stress of the magnetic thin film laminated structure caused by the tensile stress of the magnetic film layer 2 .
  • the total thickness of the magnetic thin film laminated structure is increased, thereby widening the application frequency range of the inductive device prepared therefrom.
  • the present invention also provides a micro-inductive device comprising a magnetic core prepared by the above-mentioned magnetic thin film laminated structure provided by the present invention, which is widened by the total thickness of the magnetic thin film laminated structure.
  • the application frequency range of the inductive device for example, the application frequency of the micro-inductive device ranges from 100 MHz to 5 GHz.

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Abstract

一种磁性薄膜叠层结构的沉积方法、磁性薄膜叠层结构及微电感器件，该沉积方法包括以下步骤：S1，在待加工工件上沉积粘附层（1）；S2，沉积磁性/隔离单元；磁性/隔离单元包括至少一对交替设置的磁性膜层（2）和隔离层（3）；该磁性薄膜叠层结构的沉积方法、磁性薄膜叠层结构及微电感器件，可以增大磁性薄膜叠层结构的总厚度，从而可拓宽由其制备所得的电感器件的应用频率范围。

Description

磁性薄膜叠层结构的沉积方法、磁性薄膜叠层结构及微电感器件 技术领域
本发明涉及微电子技术领域，具体地，涉及一种磁性薄膜叠层结构的沉积方法、磁性薄膜叠层结构及微电感器件。
背景技术
随着科学技术的发展，集成电路制造工艺已可以显著缩小处理器的尺寸，但是仍然有一些诸如集成电感、噪声抑制器等的核心元器件在高频化、微型化、集成化等方面面临诸多困难。为了解决此问题，具有高磁化强度、高磁导率、高共振频率及高电阻率的软磁薄膜材料引起人们越来越多的关注。
图1为现有的磁性薄膜叠层结构的结构图。如图1所示，磁性薄膜叠层结构是通过交替设置隔离层和磁性膜层而形成，其中，在所述待加工工件上直接沉积隔离层。
但在上述磁性薄膜叠层结构中，由于磁性膜层拉应力大、质脆，由该磁性膜层所得的上述磁性薄膜叠层结构不易做厚，且若制备的上述磁性薄膜叠层结构总厚度超过500nm，因磁性膜层拉应力大、质脆的特性导致磁性薄膜叠层结构拉应力也相应较大，由此会出现上述磁性薄膜叠层结构脱落其所附的待加工工件(或龟裂脱落)的现象，因此其不适用于制备微电感器件。此外，由于上述磁性薄膜叠层结构不易做厚，因而由其制备所得电感器件的应用频率范围通常仅为1～5GHz，而无法涵盖MHz的频率范围。
发明内容
本发明旨在至少解决现有技术中存在的技术问题之一，提出了一种磁性薄膜叠层结构的沉积方法、磁性薄膜叠层结构以及一种微电感器件，该磁性薄膜叠层结构的沉积方法可以增大磁性薄膜叠层结构的总厚度，拓宽由其制备的电感器件的应用频率范 围，并可将其应用在大尺寸被加工件上制作微电感器件。
为实现本发明的目的而提供一种磁性薄膜叠层结构的沉积方法，其包括以下步骤：S1，在待加工工件上沉积粘附层；S2，在所述粘附层上沉积磁性/隔离单元；所述磁性/隔离单元包括至少一对交替设置的磁性膜层和隔离层。
其中，在所述步骤S2中，在所述粘附层上沉积所述磁性膜层，在所述磁性膜层上沉积所述隔离层。
其中，交替进行所述步骤S1和所述步骤S2至少两次。
其中，磁性薄膜叠层结构的沉积方法还包括步骤S3：在所述磁性/隔离单元上沉积一层所述磁性膜层。
其中，交替进行所述步骤S1、所述步骤S2和所述步骤S3至少两次。
其中，所述粘附层采用具有压应力的材料制作。
其中，所述具有压应力的材料包括Ta薄膜、TaN薄膜或者TiN薄膜。
其中，在所述步骤S1中，采用溅射工艺沉积所述粘附层，所述溅射工艺中，靶材与脉冲直流电源电连接，所述脉冲直流电源输出的溅射功率小于或等于15kw；或者靶材与射频电源电连接，所述射频电源输出的溅射功率小于或等于3kw；或者靶材与直流电源电连接，所述直流电源输出的溅射功率小于或等于20kw。
其中，在所述靶材与脉冲直流电源电连接的情况下，所述脉冲直流电源输出的溅射功率的取值范围在3～10kw；或者在所述靶材与射频电源电连接的情况下，所述射频电源输出的溅射功率的取值范围在0.3～1.5kw；或者在所述靶材与直流电源电连接的情况下，所述直流电源输出的溅射功率的取值范围在15～19kw。
其中，在所述步骤S1中，采用溅射工艺沉积所述粘附层，所述溅射工艺的工艺压力小于或等于5mTorr。
其中，所述溅射工艺的工艺压力的取值范围在0.5～2mTorr。
其中，所述磁性膜层采用具有软磁性的材料制作。
其中，所述具有软磁性的材料包括NiFe坡莫合金材料、 CoZrTa非晶态材料、Co基材料、Fe基材料或者Ni基材料。
其中，在所述步骤S2中，采用溅射工艺沉积所述磁性膜层，所述溅射工艺中，靶材与激励电源电连接；所述激励电源输出的溅射功率小于或等于2kw；所述溅射工艺的工艺压力小于或等于5mTorr。
其中，所述溅射功率的取值范围在0.5～1.5kw；所述溅射工艺的工艺压力的取值范围在0.3～3mTorr。
其中，在沉积所述磁性膜层的同时，利用偏置磁场装置在用于沉积所述磁性薄膜叠层结构的晶片附近形成水平磁场，所述水平磁场用于使沉积的所述磁性膜层具有面内各向异性。
其中，所述隔离层由非导磁性材料制作。
其中，所述非导磁性材料包括Cu、Ta、SiO2或者TiO2。
其中，在所述步骤S2中，采用溅射工艺沉积所述隔离层，所述溅射工艺中，靶材与激励电源电连接；所述激励电源输出的溅射功率的小于或等于5kw；所述溅射工艺的工艺压力小于或等于20mTorr。
其中，所述激励电源输出的溅射功率的取值范围在1～2kw；所述溅射工艺的工艺压力的取值范围在9～12mTorr。
其中，所述粘附层厚度的取值范围在50～300nm；所述磁性膜层厚度的取值范围在30～200nm；所述隔离层厚度的取值范围在3～10nm。
其中，所述粘附层厚度的取值范围在80～200nm；所述磁性膜层厚度的取值范围在50～150nm；所述隔离层厚度的取值范围在5～8nm。
作为另一个方面，本发明还提供一种磁性薄膜叠层结构，其包括：粘附层；磁性/隔离单元；所述磁性/隔离单元包括至少一对交替设置的磁性膜层和隔离层。
其中，所述磁性膜层位于所述粘附层上，所述隔离层位于所述磁性膜层上。
其中，所述的磁性薄膜叠层结构包括至少两个磁性薄膜叠层单元，其中，每个所述磁性薄膜叠层单元包括所述粘附层和所述 磁性/隔离单元。
其中，在所述磁性薄膜叠层结构的顶层还设置有一层所述磁性膜层。
其中，所述的磁性薄膜叠层结构包括至少两个磁性薄膜叠层单元，其中，每个所述磁性薄膜叠层单元包括所述粘附层、所述磁性/隔离单元和所述磁性膜层。
其中，所述磁性薄膜叠层结构的总厚度的取值范围在400～3000nm。
其中，所述交替设置的磁性膜层和隔离层的对数为2～50对。
其中，所述粘附层厚度的取值范围在3～50nm。
作为又一个方面，本发明还提供一种微电感器件，包括磁芯，所述磁芯采用本发明前述任意一方案所述的磁性薄膜叠层结构制备得到，所述微电感器件的应用频率的取值范围在100MHz～5GHz。
本发明具有以下有益效果：
本发明提供的磁性薄膜叠层结构的沉积方法，其在粘附层上沉积磁性/隔离单元，该粘附层可以改善由于磁性膜层的拉应力造成的磁性薄膜叠层结构的拉应力过大现象，从而可以制得总厚度较大的磁性薄膜叠层结构，进而拓宽由其制备的电感器件的应用频率范围；此外，由于粘附层对磁性薄膜叠层结构的应力调节作用，可在大尺寸被加工工件上制备厚度较大的磁性薄膜叠层结构，并可避免龟裂脱落现象。
本发明提供的磁性薄膜叠层结构，其磁性/隔离单元沉积于粘附层上，该粘附层可以调节磁性膜层的拉应力，进而调节磁性薄膜叠层结构的应力，从而使得包含粘附层的磁性薄膜叠层结构总厚度得以增大，进而拓宽了由其制备的电感器件的应用频率范围。
本发明提供的微电感器件，其包括由本发明提供的磁性薄膜叠层结构制备的磁芯，由于该磁性薄膜叠层结构总厚度得以增大，因而拓宽了该电感器件的应用频率范围，例如该微电感器件的应用频率的取值范围可以在100MHz～5GHz。
附图说明
图1为现有的磁性薄膜叠层结构的结构图；
图2为本发明第一实施例提供的磁性薄膜叠层结构的沉积方法的流程框图；
图3为采用本发明第一实施例提供的磁性薄膜叠层结构的沉积方法获得的磁性薄膜叠层结构的结构图；
图4为采用本发明第二实施例提供的磁性薄膜叠层结构的沉积方法获得的磁性薄膜叠层结构的结构图。
具体实施方式
为使本领域的技术人员更好地理解本发明的技术方案，下面结合附图来对本发明提供的磁性薄膜叠层结构的沉积方法、磁性薄膜叠层结构及微电感器件进行详细描述。
图2为本发明第一实施例提供的磁性薄膜叠层结构的沉积方法的流程框图。图3为采用本发明第一实施例提供的沉积方法获得的磁性薄膜叠层结构的结构图。请一并参阅图2和图3，磁性薄膜叠层结构的沉积方法，其包括以下步骤：
S1，在待加工工件上沉积粘附层1。
需要说明的是，在本发明实施例中的S1中，待加工工件包括表面上未沉积有薄膜的待加工工件，也包括表面上沉积有磁性膜层2或隔离层3的待加工工件。
S2，在粘附层1上沉积磁性/隔离单元，该磁性/隔离单元包括至少一对交替设置的磁性膜层2和隔离层3，所谓交替设置是指沿待加工工件的轴向交替地层叠设置。
其中，磁性/隔离单元中与粘附层1相接触的那一层为磁性膜层2，相应地，在磁性膜层2上沉积隔离层3。
隔离层3采用非导磁的材料制作，该非导磁性材料包括Cu、Ta、SiO2或者TiO2。隔离层3不仅可以对相邻的两层磁性膜层2进行隔离，减小磁通趋肤效应，而且还可以起到调节磁性薄膜叠 层结构的电阻率、减少涡流损耗以及提高磁性薄膜叠层结构的高频性能的作用。容易理解，为了使隔离层3充分发挥上述作用，可以在粘附层1上沉积磁性膜层2，再在磁性膜层2上沉积隔离层3，这样交替设置磁性膜层2和隔离层3；进一步地，使最顶层为隔离层3，可以进一步提高磁性薄膜叠层结构的电阻率。
而且，可选的，本发明提供的磁性薄膜叠层结构的沉积方法还可以包括以下步骤：
S3，在磁性/隔离单元上沉积一层磁性膜层2。
在本实施例中，磁性膜层2和隔离层3的对数为4对，且在最上层的隔离层3上再沉积一层磁性膜层2。即，磁性膜层2的总层数为5层；隔离层3的总层数为4层。当然，在实际应用中，也可以省去步骤S3，即，磁性膜层2和隔离层3的总层数相等。
借助上述粘附层1，可以改善由磁性膜层2的拉应力作用造成的磁性薄膜叠层结构的拉应力过大现象，从而可以制得总厚度较大的磁性薄膜叠层结构，拓宽由其制备的电感器件的适用频率范围。
粘附层1可以采用诸如Ta薄膜、TaN薄膜或者TiN薄膜等的具有压应力的材料制作，以起到调节磁性薄膜叠层结构的拉应力的作用。
对磁性薄膜叠层结构而言，磁性薄膜叠层结构其性能由磁性膜层2以及隔离层3共同决定。磁性膜层2形成微电感的磁芯，增加磁通。隔离层3起到隔离相邻的两层磁性膜层2的作用，并调节磁性膜层2的电阻率，减少涡流损耗，提高高频性能。优选的，通过步骤S3在磁性/隔离单元上沉积一层磁性膜层2，可以进一步增加磁性薄膜叠层结构中的磁性膜层2的总体厚度，从而可以增加磁性能，进而在实际应用过程中可以对所需磁性薄膜叠层结构的磁性能进行匹配。
下面对粘附层1的沉积方法进行详细描述。
具体地，在步骤S1中，采用溅射工艺沉积粘附层1。进行该溅射工艺的设备主要包括反应腔室、靶材、用于承载基片的基座和脉冲直流电源，其中，靶材设置在反应腔室内的顶部，基座设 置在反应腔室内，且位于该靶材的下方，可选的，靶材与基座之间的竖直间距(即，靶基间距)为30～90mm。而且，靶材与脉冲直流电源电连接，用于向靶材加载溅射功率，以激发反应腔室内的工艺气体形成等离子体，并轰击靶材而溅射出靶材材料，并沉积在晶片表面，以形成薄膜。由于受限于工艺过程中所用到的光刻胶的耐温范围，在工艺整合中，采用较低的溅射功率更容易对晶片及其上光刻胶的温度进行控制，而采用靶材与脉冲直流电源电连接，在该较低的溅射功率下仍可得到应力调节效果较优的粘附层1。
进行上述溅射工艺的参数为：脉冲直流电源输出的溅射功率小于或等于15kw；溅射工艺的工艺压力小于或等于5mTorr。优选的，为了满足工艺整合需求，提高工艺效果，脉冲直流电源输出的溅射功率的取值范围在3～10kw。溅射工艺的工艺压力的取值范围在0.5～2mTorr；溅射厚度的取值范围在80～200nm。
可选的，在步骤S1中，上述靶材也可以与射频电源电连接，该射频电源输出的溅射功率小于或等于3kw；或者，靶材还可以与直流电源电连接，该直流电源输出的溅射功率小于或等于20kw。优选的，为了满足工艺整合需求，提高工艺效果，射频电源输出的溅射功率的取值范围在0.3～1.5kw。或者，直流电源输出的溅射功率的取值范围在15～19kw。
在步骤S2中，可以采用溅射工艺沉积磁性膜层2。进行该溅射工艺的设备主要包括反应腔室、靶材、用于承载基片的基座、溅射电源和偏置磁场装置，其中，靶材设置在反应腔室内的顶部，基座设置在反应腔室内，且位于该靶材的下方，而且，靶材与溅射电源电连接，溅射电源用于向靶材加载溅射功率，以激发反应腔室内的工艺气体形成等离子体，并轰击靶材而溅射出靶材材料，并沉积在粘附层1的表面，从而形成磁性膜层2。
此外，偏置磁场装置设置在反应腔室内，且包括极性相反的两组磁体组，两组磁体组分别设置在基座相对的两侧。该偏置磁场装置可以在反应腔室内靠近基座的区域形成水平磁场(平行于晶片表面)，该水平磁场的磁场强度可以达到50～300Gs，这使得 在进行溅射工艺时，沉积在晶片上的磁性材料的磁畴沿水平方向排列，从而能够在磁畴排列方向上形成易磁化场，而在与磁畴排列方向相互垂直的方向上形成难磁化场，即，形成面内各向异性场，进而获得面内各向异性的磁性薄膜叠层结构，以便用于制备微电感器件。
进行上述溅射工艺的参数为：激励电源输出的溅射功率小于或等于2kw；溅射工艺的工艺压力小于或等于5mTorr。优选的，为了满足工艺整合需求，优化磁性膜层的性能，提高工艺效果，激励电源输出的溅射功率的取值范围在0.5～1.5kw；溅射工艺的工艺压力的取值范围在0.3～3mTorr。
磁性膜层2采用具有软磁性的材料制作，该软磁性材料满足饱和磁化强度(Ms)高、剩余磁化强度(Mr)低、初始磁导率(μi)和最大磁导率(μmax)高、矫顽力(Hc)小的条件，由此可迅速响应外磁场的变化，且能低损耗地获得高磁通密度。可选的，该具有软磁性的材料包括NiFe坡莫合金材料、CoZrTa非晶态材料、Co基材料、Fe基材料或者Ni基材料。其中，NiFe坡莫合金材料例如可以为Ni80Fe20、Ni45Fe55或者Ni81Fe19等等。CoZrTa非晶态材料例如可以为Co91.5Zr4.0Ta4.5等等。Co基材料、Fe基材料或者Ni基材料例如可以为Co60Fe40、NiFeCr等等。
在步骤S2中，可以采用溅射工艺沉积隔离层3。进行该溅射工艺的设备主要包括反应腔室、靶材、用于承载基片的基座和溅射电源，其中，靶材设置在反应腔室内的顶部，基座设置在反应腔室内，且位于该靶材的下方。而且，靶材与溅射电源电连接。
进行上述溅射工艺的参数为：溅射电源输出的溅射功率小于或等于5kw；溅射工艺的工艺压力小于或等于20mTorr。优选的，为了满足工艺整合需求，提高工艺效果，溅射电源输出的溅射功率的取值范围在1～2kw；溅射工艺的工艺压力的取值范围在9～12mTorr。
可选的，粘附层1的厚度的取值范围在50～300nm。磁性膜层2的厚度的取值范围在30～200nm。隔离层3的厚度的取值范围在3～10nm。优选的，粘附层1的厚度的取值范围在80～200nm。 磁性膜层2的厚度的取值范围在50～150nm。隔离层3的厚度的取值范围在5～8nm。
图4为采用本发明第二实施例提供的磁性薄膜叠层结构的沉积方法获得的磁性薄膜叠层结构的结构图。请参阅图4，本实施例提供的沉积方法与上述第一实施例相比，其区别在于：步骤S1和步骤S2交替进行至少两次，以获得区别于实施例一中的磁性薄膜叠层结构的结构。
具体来说，采用本实施例提供的沉积方法获得的磁性薄膜叠层结构包括M个磁性薄膜叠层单元，即，第一个磁性薄膜叠层单元100、第二个磁性薄膜叠层单元200、…、第M个磁性薄膜叠层单元，M为大于1的整数。对于每个磁性薄膜叠层单元，包括粘附层1和磁性/隔离单元。其中，磁性/隔离单元包括至少一对交替设置的磁性膜层2和隔离层3，优选的，对于各磁性/隔离单元而言，与粘附层1相接触的那一层为磁性膜层2，磁性膜层2上设置隔离层3。
在磁性薄膜叠层结构厚度一定的情况下，若磁性膜层2及隔离层3的对数过多，则表明制备磁性膜层2及隔离层3的次数过多，由此对整个工艺设备系统而言，工艺次数很大，从而导致系统的工艺压力大，使得单位时间内的系统产能减小，从而导致该系统的生产成本增加；另一方面，若隔离层3及磁性膜层2的对数过少，会导致磁性薄膜叠层结构涉及到的各个粘附层1、磁性膜层2和隔离层3的单层厚度较大，这将导致磁性薄膜叠层结构的性能受损。因此，对于磁性薄膜叠层结构而言，需要综合考量系统产能与磁性薄膜叠层结构的性能来优化磁性薄膜叠层结构总厚度以及各层厚度，特别是对隔离层3及磁性膜层2的对数的优化。优选的，隔离层3和磁性膜层2的对数为2～50对，该对数范围既可以满足对磁性薄膜叠层结构的性能要求，又可以保证良好的系统产能。
通过采用多层结构的磁性薄膜叠层结构，可以进一步增大磁性薄膜叠层结构的总厚度，从而拓宽由其制备的电感器件的应用频率范围。优选的，上述磁性薄膜叠层结构的总厚度的取值范围 在400～3000nm。优选的，上述磁性薄膜叠层结构的应用频率的取值范围在100MHz～5GHz。
在本实施例中，粘附层1的溅射厚度的取值范围在3～50nm。磁性膜层2和隔离层3的厚度与上述第一实施例相同。此外，制备粘附层1、磁性膜层2和隔离层3的其他工艺参数与上述第一实施例相同。
另外，在本实施例中，每进行一次步骤S2，沉积一层磁性/隔离单元，即，相邻的两层粘附层1之间，具有单层磁性/隔离单元。但是，本发明并不局限于此，在实际应用中，每进行一次步骤S2，也可以沉积两层以上的磁性/隔离单元，即，相邻的两层粘附层1之间，具有连续设置的两层以上的磁性/隔离单元。
需要说明的是，在本实施例中，每个磁性薄膜叠层单元包括粘附层1和磁性/隔离单元。但是，本发明并不局限于此，在实际应用中，每个磁性薄膜叠层单元包括粘附层1、磁性/隔离单元和磁性膜层2。
作为另一个技术方案，本发明还提供一种磁性薄膜叠层结构，其包括粘附层1和磁性/隔离单元。其中，磁性/隔离单元包括至少一对交替设置的磁性膜层2和隔离层3。
可选的，磁性膜层2位于粘附层上，隔离层3位于磁性膜层2上。
可选的，如图3所示，在上述磁性薄膜叠层结构(包含有至少一对交替设置的磁性膜层2和隔离层3)的顶层还设置有一层磁性膜层2。
优选的，如图4所示，磁性薄膜叠层结构包括M个磁性薄膜叠层单元，即，第一个磁性薄膜叠层单元100、第二个磁性薄膜叠层单元200、…、第M个磁性薄膜叠层单元，M为大于1的整数。对于每个磁性薄膜叠层单元，包括粘附层1和磁性/隔离单元。其中，磁性/隔离单元包括至少一对交替设置的磁性膜层2和隔离层3，可选的，磁性膜层2位于粘附层上，隔离层3位于磁性膜层2上。优选的，隔离层3和磁性膜层2的对数为2～50对。粘附层1的溅射厚度的取值范围在3～50nm。
通过采用多层磁性薄膜叠层结构的结构，可以进一步增大磁性薄膜叠层结构的总厚度，从而拓宽由其制备的电感器件的应用频率的范围。优选的，上述磁性薄膜叠层结构的总厚度的取值范围在400～3000nm。优选的，由上述磁性薄膜叠层结构制备的电感器件的应用频率的取值范围在100MHz～5GHz。
另外，在本实施例中，相邻的两层粘附层1之间，具有单层磁性/隔离单元。但是，本发明并不局限于此，在实际应用中，相邻的两层粘附层1之间，也可以具有连续设置的两层以上的磁性/隔离单元。
需要说明的是，在本实施例中，每个磁性薄膜叠层单元包括粘附层1和磁性/隔离单元。但是，本发明并不局限于此，在实际应用中，每个磁性薄膜叠层单元还可以包括粘附层1、磁性/隔离单元和磁性膜层2。
本发明提供的磁性薄膜叠层结构的沉积方法，其在粘附层上沉积磁性/隔离单元，该粘附层可以调节由磁性膜层的拉应力造成的磁性薄膜叠层结构的拉应力过大现象，从而可以制得总厚度较大的磁性薄膜叠层结构，拓宽由其制备的电感器件的应用频率范围；此外，由于粘附层对磁性薄膜叠层结构的应力调节作用，可在大尺寸被加工工件上制备厚度较大的磁性薄膜叠层结构，避免龟裂脱落现象。
本发明实施例提供的磁性薄膜叠层结构，其磁性/隔离单元沉积于粘附层1上，该粘附层1可以调节由磁性膜层2的拉应力造成的磁性薄膜叠层结构的拉应力，增大磁性薄膜叠层结构的总厚度，从而拓宽了由其制备的电感器件的应用频率范围。
作为另一个技术方案，本发明还提供一种微电感器件，其包括由本发明提供的上述磁性薄膜叠层结构制备的磁芯，由于该磁性薄膜叠层结构总厚度得以增大，因而拓宽了该电感器件的应用频率范围，例如该微电感器件的应用频率的取值范围在100MHz～5GHz。
可以理解的是，以上实施方式仅仅是为了说明本发明的原理而采用的示例性实施方式，然而本发明并不局限于此。对于本领 域内的普通技术人员而言，在不脱离本发明的精神和实质的情况下，可以做出各种变型和改进，这些变型和改进也视为本发明的保护范围。

Claims (31)

  1. 一种磁性薄膜叠层结构的沉积方法，其特征在于，包括以下步骤：
    S1，在待加工工件上沉积粘附层；
    S2，在所述粘附层上沉积磁性/隔离单元；所述磁性/隔离单元包括至少一对交替设置的磁性膜层和隔离层。
  2. 根据权利要求1所述的磁性薄膜叠层结构的沉积方法，其特征在于，在所述步骤S2中，在所述粘附层上沉积所述磁性膜层，在所述磁性膜层上沉积所述隔离层。
  3. 根据权利要求1所述的磁性薄膜叠层结构的沉积方法，其特征在于，交替进行所述步骤S1和所述步骤S2至少两次。
  4. 根据权利要求1所述的磁性薄膜叠层结构的沉积方法，其特征在于，还包括步骤S3：在所述磁性/隔离单元上沉积一层所述磁性膜层。
  5. 根据权利要求4所述的磁性薄膜叠层结构的沉积方法，其特征在于，交替进行所述步骤S1、所述步骤S2和所述步骤S3至少两次。
  6. 根据权利要求1-5任意一项所述的磁性薄膜叠层结构的沉积方法，其特征在于，所述粘附层采用具有压应力的材料制作。
  7. 根据权利要求6任意一项所述的磁性薄膜叠层结构的沉积方法，其特征在于，所述具有压应力的材料包括Ta薄膜、TaN薄膜或者TiN薄膜。
  8. 根据权利要求1-5任意一项所述的磁性薄膜叠层结构的沉积方法， 其特征在于，在所述步骤S1中，采用溅射工艺沉积所述粘附层，所述溅射工艺中，靶材与脉冲直流电源电连接，所述脉冲直流电源输出的溅射功率小于或等于15kw；或者
    靶材与射频电源电连接，所述射频电源输出的溅射功率小于或等于3kw；或者
    靶材与直流电源电连接，所述直流电源输出的溅射功率小于或等于20kw。
  9. 根据权利要求8所述的磁性薄膜叠层结构的沉积方法，其特征在于：
    在所述靶材与脉冲直流电源电连接的情况下，所述脉冲直流电源输出的溅射功率的取值范围在3～10kw；或者
    在所述靶材与射频电源电连接的情况下，所述射频电源输出的溅射功率的取值范围在0.3～1.5kw；或者
    在所述靶材与直流电源电连接的情况下，所述直流电源输出的溅射功率的取值范围在15～19kw。
  10. 根据权利要求1-5任意一项所述的磁性薄膜叠层结构的沉积方法，其特征在于，在所述步骤S1中，采用溅射工艺沉积所述粘附层，
    所述溅射工艺的工艺压力小于或等于5mTorr。
  11. 根据权利要求10所述的磁性薄膜叠层结构的沉积方法，其特征在于，所述溅射工艺的工艺压力的取值范围在0.5～2mTorr。
  12. 根据权利要求1-5任意一项所述的磁性薄膜叠层结构的沉积方法，其特征在于，所述磁性膜层采用具有软磁性的材料制作。
  13. 根据权利要求12所述的磁性薄膜叠层结构的沉积方法，其特征在 于，所述具有软磁性的材料包括NiFe坡莫合金材料、CoZrTa非晶态材料、Co基材料、Fe基材料或者Ni基材料。
  14. 根据权利要求1-4任意一项所述的磁性薄膜叠层结构的沉积方法，其特征在于，在所述步骤S2中，采用溅射工艺沉积所述磁性膜层，所述溅射工艺中，靶材与激励电源电连接；
    所述激励电源输出的溅射功率小于或等于2kw；
    所述溅射工艺的工艺压力小于或等于5mTorr。
  15. 根据权利要求14所述的磁性薄膜叠层结构的沉积方法，其特征在于，所述溅射功率的取值范围在0.5～1.5kw；
    所述溅射工艺的工艺压力的取值范围在0.3～3mTorr。
  16. 根据权利要求1-5所述的磁性薄膜叠层结构的沉积方法，其特征在于，在沉积所述磁性膜层的同时，利用偏置磁场装置在用于沉积所述磁性薄膜叠层结构的晶片附近形成水平磁场，所述水平磁场用于使沉积的所述磁性膜层具有面内各向异性。
  17. 根据权利要求1-5所述的磁性薄膜叠层结构的沉积方法，其特征在于，所述隔离层由非导磁性材料制作。
  18. 根据权利要求17所述的磁性薄膜叠层结构的沉积方法，其特征在于，所述非导磁性材料包括Cu、Ta、SiO2或者TiO2。
  19. 根据权利要求1-5任意一项所述的磁性薄膜叠层结构的沉积方法，其特征在于，在所述步骤S2中，采用溅射工艺沉积所述隔离层，所述溅射工艺中，靶材与激励电源电连接；
    所述激励电源输出的溅射功率的小于或等于5kw；
    所述溅射工艺的工艺压力小于或等于20mTorr。
  20. 根据权利要求19所述的磁性薄膜叠层结构的沉积方法，其特征在于，
    所述激励电源输出的溅射功率的取值范围在1～2kw；
    所述溅射工艺的工艺压力的取值范围在9～12mTorr。
  21. 根据权利要求1-5所述的磁性薄膜叠层结构的沉积方法，其特征在于，
    所述粘附层厚度的取值范围在50～300nm；
    所述磁性膜层厚度的取值范围在30～200nm；
    所述隔离层厚度的取值范围在3～10nm。
  22. 根据权利要求21所述的磁性薄膜叠层结构的沉积方法，其特征在于，
    所述粘附层厚度的取值范围在80～200nm；
    所述磁性膜层厚度的取值范围在50～150nm；
    所述隔离层厚度的取值范围在5～8nm。
  23. 一种磁性薄膜叠层结构，其特征在于，包括：
    粘附层；
    磁性/隔离单元；所述磁性/隔离单元包括至少一对交替设置的磁性膜层和隔离层。
  24. 根据权利要求23所述的磁性薄膜叠层结构，其特征在于，所述磁性膜层位于所述粘附层上，所述隔离层位于所述磁性膜层上。
  25. 根据权利要求23所述的磁性薄膜叠层结构，其特征在于，包括至少两个磁性薄膜叠层单元，其中，每个所述磁性薄膜叠层单元包括所述粘附层和所述磁性/隔离单元。
  26. 根据权利要求23所述的磁性薄膜叠层结构，其特征在于，在所述磁性薄膜叠层结构的顶层还设置有一层所述磁性膜层。
  27. 根据权利要求23所述的磁性薄膜叠层结构，其特征在于，包括至少两个磁性薄膜叠层单元，其中，每个所述磁性薄膜叠层单元包括所述粘附层、所述磁性/隔离单元和所述磁性膜层。
  28. 根据权利要求23-27任意一项所述的磁性薄膜叠层结构，其特征在于，所述磁性薄膜叠层结构的总厚度的取值范围在400～3000nm。
  29. 根据权利要求23-27任意一项所述的磁性薄膜叠层结构，其特征在于，所述交替设置的磁性膜层和隔离层的对数为2～50对。
  30. 根据权利要求23-27任意一项所述的磁性薄膜叠层结构，其特征在于，所述粘附层厚度的取值范围在3～50nm。
  31. 一种微电感器件，包括磁芯，其特征在于，所述磁芯采用如权利要求23-27任意一项所述的磁性薄膜叠层结构制备，所述微电感器件的应用频率的取值范围在100MHz～5GHz。
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