WO2018074534A1 - レジスト下層膜形成用組成物、レジスト下層膜及びその形成方法、パターニングされた基板の製造方法並びに化合物 - Google Patents
レジスト下層膜形成用組成物、レジスト下層膜及びその形成方法、パターニングされた基板の製造方法並びに化合物 Download PDFInfo
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- 150000001875 compounds Chemical class 0.000 title claims abstract description 134
- 239000000203 mixture Substances 0.000 title claims abstract description 98
- 239000000758 substrate Substances 0.000 title claims description 48
- 238000000034 method Methods 0.000 title claims description 41
- 238000004519 manufacturing process Methods 0.000 title description 14
- 230000015572 biosynthetic process Effects 0.000 title description 6
- 125000004432 carbon atom Chemical group C* 0.000 claims abstract description 50
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims abstract description 47
- 239000002904 solvent Substances 0.000 claims abstract description 27
- 125000000962 organic group Chemical group 0.000 claims abstract description 21
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims abstract description 15
- 125000003545 alkoxy group Chemical group 0.000 claims abstract description 14
- 238000005530 etching Methods 0.000 claims description 42
- 125000003118 aryl group Chemical group 0.000 claims description 38
- 238000000576 coating method Methods 0.000 claims description 36
- 239000011248 coating agent Substances 0.000 claims description 29
- 239000002253 acid Substances 0.000 claims description 24
- 238000010438 heat treatment Methods 0.000 claims description 24
- 125000004430 oxygen atom Chemical group O* 0.000 claims description 8
- 125000000217 alkyl group Chemical group 0.000 claims description 7
- 229910052799 carbon Inorganic materials 0.000 claims description 4
- 229920005989 resin Polymers 0.000 description 30
- 239000011347 resin Substances 0.000 description 30
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 28
- -1 ethanediyl group Chemical group 0.000 description 27
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 21
- 238000006243 chemical reaction Methods 0.000 description 20
- 239000010410 layer Substances 0.000 description 19
- 239000000243 solution Substances 0.000 description 18
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 description 17
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 17
- 239000003431 cross linking reagent Substances 0.000 description 14
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 14
- 150000004945 aromatic hydrocarbons Chemical class 0.000 description 13
- 150000002430 hydrocarbons Chemical group 0.000 description 13
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 11
- 239000012299 nitrogen atmosphere Substances 0.000 description 11
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 10
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 9
- 238000001914 filtration Methods 0.000 description 9
- 239000012044 organic layer Substances 0.000 description 9
- 229910052710 silicon Inorganic materials 0.000 description 9
- 239000004094 surface-active agent Substances 0.000 description 9
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 8
- 125000005842 heteroatom Chemical group 0.000 description 8
- YFSUTJLHUFNCNZ-UHFFFAOYSA-N perfluorooctane-1-sulfonic acid Chemical compound OS(=O)(=O)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)F YFSUTJLHUFNCNZ-UHFFFAOYSA-N 0.000 description 8
- 239000010703 silicon Substances 0.000 description 8
- NTIZESTWPVYFNL-UHFFFAOYSA-N Methyl isobutyl ketone Chemical compound CC(C)CC(C)=O NTIZESTWPVYFNL-UHFFFAOYSA-N 0.000 description 7
- UIHCLUNTQKBZGK-UHFFFAOYSA-N Methyl isobutyl ketone Natural products CCC(C)C(C)=O UIHCLUNTQKBZGK-UHFFFAOYSA-N 0.000 description 7
- 239000011203 carbon fibre reinforced carbon Substances 0.000 description 7
- 230000001747 exhibiting effect Effects 0.000 description 7
- 229940043265 methyl isobutyl ketone Drugs 0.000 description 7
- 229920000642 polymer Polymers 0.000 description 7
- 239000002244 precipitate Substances 0.000 description 7
- 238000001226 reprecipitation Methods 0.000 description 7
- 239000007787 solid Substances 0.000 description 7
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 6
- 125000003277 amino group Chemical group 0.000 description 6
- 238000004132 cross linking Methods 0.000 description 6
- 238000011161 development Methods 0.000 description 6
- 230000018109 developmental process Effects 0.000 description 6
- MTHSVFCYNBDYFN-UHFFFAOYSA-N diethylene glycol Chemical compound OCCOCCO MTHSVFCYNBDYFN-UHFFFAOYSA-N 0.000 description 6
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 6
- 230000008569 process Effects 0.000 description 6
- 230000005855 radiation Effects 0.000 description 6
- 230000009467 reduction Effects 0.000 description 6
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 5
- AFCARXCZXQIEQB-UHFFFAOYSA-N N-[3-oxo-3-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)propyl]-2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidine-5-carboxamide Chemical compound O=C(CCNC(=O)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F)N1CC2=C(CC1)NN=N2 AFCARXCZXQIEQB-UHFFFAOYSA-N 0.000 description 5
- 238000001816 cooling Methods 0.000 description 5
- 239000004210 ether based solvent Substances 0.000 description 5
- 125000001624 naphthyl group Chemical group 0.000 description 5
- 150000002989 phenols Chemical class 0.000 description 5
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 5
- 239000000047 product Substances 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 238000004528 spin coating Methods 0.000 description 5
- PUPZLCDOIYMWBV-UHFFFAOYSA-N (+/-)-1,3-Butanediol Chemical compound CC(O)CCO PUPZLCDOIYMWBV-UHFFFAOYSA-N 0.000 description 4
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 4
- MZRVEZGGRBJDDB-UHFFFAOYSA-N N-Butyllithium Chemical compound [Li]CCCC MZRVEZGGRBJDDB-UHFFFAOYSA-N 0.000 description 4
- UFWIBTONFRDIAS-UHFFFAOYSA-N Naphthalene Chemical compound C1=CC=CC2=CC=CC=C21 UFWIBTONFRDIAS-UHFFFAOYSA-N 0.000 description 4
- DNIAPMSPPWPWGF-UHFFFAOYSA-N Propylene glycol Chemical compound CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 description 4
- HXGDTGSAIMULJN-UHFFFAOYSA-N acetnaphthylene Natural products C1=CC(C=C2)=C3C2=CC=CC3=C1 HXGDTGSAIMULJN-UHFFFAOYSA-N 0.000 description 4
- 125000002029 aromatic hydrocarbon group Chemical group 0.000 description 4
- 239000012298 atmosphere Substances 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 4
- VPUGDVKSAQVFFS-UHFFFAOYSA-N coronene Chemical compound C1=C(C2=C34)C=CC3=CC=C(C=C3)C4=C4C3=CC=C(C=C3)C4=C2C3=C1 VPUGDVKSAQVFFS-UHFFFAOYSA-N 0.000 description 4
- 238000006297 dehydration reaction Methods 0.000 description 4
- SWXVUIWOUIDPGS-UHFFFAOYSA-N diacetone alcohol Chemical compound CC(=O)CC(C)(C)O SWXVUIWOUIDPGS-UHFFFAOYSA-N 0.000 description 4
- 239000003759 ester based solvent Substances 0.000 description 4
- 238000011156 evaluation Methods 0.000 description 4
- 238000005227 gel permeation chromatography Methods 0.000 description 4
- 125000005843 halogen group Chemical group 0.000 description 4
- CYSFUFRXDOAOMP-UHFFFAOYSA-M magnesium;prop-1-ene;chloride Chemical compound [Mg+2].[Cl-].[CH2-]C=C CYSFUFRXDOAOMP-UHFFFAOYSA-M 0.000 description 4
- 239000003960 organic solvent Substances 0.000 description 4
- 239000000843 powder Substances 0.000 description 4
- BBEAQIROQSPTKN-UHFFFAOYSA-N pyrene Chemical compound C1=CC=C2C=CC3=CC=CC4=CC=C1C2=C43 BBEAQIROQSPTKN-UHFFFAOYSA-N 0.000 description 4
- 125000001424 substituent group Chemical group 0.000 description 4
- HMUNWXXNJPVALC-UHFFFAOYSA-N 1-[4-[2-(2,3-dihydro-1H-inden-2-ylamino)pyrimidin-5-yl]piperazin-1-yl]-2-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)ethanone Chemical compound C1C(CC2=CC=CC=C12)NC1=NC=C(C=N1)N1CCN(CC1)C(CN1CC2=C(CC1)NN=N2)=O HMUNWXXNJPVALC-UHFFFAOYSA-N 0.000 description 3
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 3
- XDTMQSROBMDMFD-UHFFFAOYSA-N Cyclohexane Chemical compound C1CCCCC1 XDTMQSROBMDMFD-UHFFFAOYSA-N 0.000 description 3
- RGSFGYAAUTVSQA-UHFFFAOYSA-N Cyclopentane Chemical compound C1CCCC1 RGSFGYAAUTVSQA-UHFFFAOYSA-N 0.000 description 3
- YMWUJEATGCHHMB-UHFFFAOYSA-N Dichloromethane Chemical compound ClCCl YMWUJEATGCHHMB-UHFFFAOYSA-N 0.000 description 3
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 3
- MKYBYDHXWVHEJW-UHFFFAOYSA-N N-[1-oxo-1-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)propan-2-yl]-2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidine-5-carboxamide Chemical compound O=C(C(C)NC(=O)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F)N1CC2=C(CC1)NN=N2 MKYBYDHXWVHEJW-UHFFFAOYSA-N 0.000 description 3
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- ZMANZCXQSJIPKH-UHFFFAOYSA-N Triethylamine Chemical compound CCN(CC)CC ZMANZCXQSJIPKH-UHFFFAOYSA-N 0.000 description 3
- DJGQYTUXTCURSC-UHFFFAOYSA-N acenaphthylene-1-carbaldehyde Chemical group C1=CC(C(C=O)=C2)=C3C2=CC=CC3=C1 DJGQYTUXTCURSC-UHFFFAOYSA-N 0.000 description 3
- 125000004054 acenaphthylenyl group Chemical group C1(=CC2=CC=CC3=CC=CC1=C23)* 0.000 description 3
- 239000005456 alcohol based solvent Substances 0.000 description 3
- 125000002723 alicyclic group Chemical group 0.000 description 3
- 150000003863 ammonium salts Chemical class 0.000 description 3
- DJBAOXYQCAKLPH-UHFFFAOYSA-M bis(4-tert-butylphenyl)iodanium;1,1,2,2,3,3,4,4,4-nonafluorobutane-1-sulfonate Chemical compound [O-]S(=O)(=O)C(F)(F)C(F)(F)C(F)(F)C(F)(F)F.C1=CC(C(C)(C)C)=CC=C1[I+]C1=CC=C(C(C)(C)C)C=C1 DJBAOXYQCAKLPH-UHFFFAOYSA-M 0.000 description 3
- 150000001721 carbon Chemical group 0.000 description 3
- CREMABGTGYGIQB-UHFFFAOYSA-N carbon carbon Chemical compound C.C CREMABGTGYGIQB-UHFFFAOYSA-N 0.000 description 3
- 125000002915 carbonyl group Chemical group [*:2]C([*:1])=O 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 238000001312 dry etching Methods 0.000 description 3
- 239000003822 epoxy resin Substances 0.000 description 3
- 125000003827 glycol group Chemical group 0.000 description 3
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 3
- 229930195733 hydrocarbon Natural products 0.000 description 3
- XMBWDFGMSWQBCA-UHFFFAOYSA-N hydrogen iodide Chemical class I XMBWDFGMSWQBCA-UHFFFAOYSA-N 0.000 description 3
- 229910052809 inorganic oxide Inorganic materials 0.000 description 3
- 125000004184 methoxymethyl group Chemical group [H]C([H])([H])OC([H])([H])* 0.000 description 3
- JFNLZVQOOSMTJK-KNVOCYPGSA-N norbornene Chemical compound C1[C@@H]2CC[C@H]1C=C2 JFNLZVQOOSMTJK-KNVOCYPGSA-N 0.000 description 3
- PGMYKACGEOXYJE-UHFFFAOYSA-N pentyl acetate Chemical compound CCCCCOC(C)=O PGMYKACGEOXYJE-UHFFFAOYSA-N 0.000 description 3
- 229920000647 polyepoxide Polymers 0.000 description 3
- LLHKCFNBLRBOGN-UHFFFAOYSA-N propylene glycol methyl ether acetate Chemical compound COCC(C)OC(C)=O LLHKCFNBLRBOGN-UHFFFAOYSA-N 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- NQRYJNQNLNOLGT-UHFFFAOYSA-N tetrahydropyridine hydrochloride Natural products C1CCNCC1 NQRYJNQNLNOLGT-UHFFFAOYSA-N 0.000 description 3
- WSLDOOZREJYCGB-UHFFFAOYSA-N 1,2-Dichloroethane Chemical compound ClCCCl WSLDOOZREJYCGB-UHFFFAOYSA-N 0.000 description 2
- GDXHBFHOEYVPED-UHFFFAOYSA-N 1-(2-butoxyethoxy)butane Chemical compound CCCCOCCOCCCC GDXHBFHOEYVPED-UHFFFAOYSA-N 0.000 description 2
- CEZIJESLKIMKNL-UHFFFAOYSA-N 1-(4-butoxynaphthalen-1-yl)thiolan-1-ium Chemical compound C12=CC=CC=C2C(OCCCC)=CC=C1[S+]1CCCC1 CEZIJESLKIMKNL-UHFFFAOYSA-N 0.000 description 2
- JOLQKTGDSGKSKJ-UHFFFAOYSA-N 1-ethoxypropan-2-ol Chemical compound CCOCC(C)O JOLQKTGDSGKSKJ-UHFFFAOYSA-N 0.000 description 2
- LIPRQQHINVWJCH-UHFFFAOYSA-N 1-ethoxypropan-2-yl acetate Chemical compound CCOCC(C)OC(C)=O LIPRQQHINVWJCH-UHFFFAOYSA-N 0.000 description 2
- CJNBJBMSAZNICG-UHFFFAOYSA-N 1-fluorobutane-1-sulfonic acid Chemical compound CCCC(F)S(O)(=O)=O CJNBJBMSAZNICG-UHFFFAOYSA-N 0.000 description 2
- ARXJGSRGQADJSQ-UHFFFAOYSA-N 1-methoxypropan-2-ol Chemical compound COCC(C)O ARXJGSRGQADJSQ-UHFFFAOYSA-N 0.000 description 2
- YBYIRNPNPLQARY-UHFFFAOYSA-N 1H-indene Chemical compound C1=CC=C2CC=CC2=C1 YBYIRNPNPLQARY-UHFFFAOYSA-N 0.000 description 2
- OJVAMHKKJGICOG-UHFFFAOYSA-N 2,5-hexanedione Chemical compound CC(=O)CCC(C)=O OJVAMHKKJGICOG-UHFFFAOYSA-N 0.000 description 2
- VZSRBBMJRBPUNF-UHFFFAOYSA-N 2-(2,3-dihydro-1H-inden-2-ylamino)-N-[3-oxo-3-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)propyl]pyrimidine-5-carboxamide Chemical compound C1C(CC2=CC=CC=C12)NC1=NC=C(C=N1)C(=O)NCCC(N1CC2=C(CC1)NN=N2)=O VZSRBBMJRBPUNF-UHFFFAOYSA-N 0.000 description 2
- OZAIFHULBGXAKX-UHFFFAOYSA-N 2-(2-cyanopropan-2-yldiazenyl)-2-methylpropanenitrile Chemical compound N#CC(C)(C)N=NC(C)(C)C#N OZAIFHULBGXAKX-UHFFFAOYSA-N 0.000 description 2
- XNWFRZJHXBZDAG-UHFFFAOYSA-N 2-METHOXYETHANOL Chemical compound COCCO XNWFRZJHXBZDAG-UHFFFAOYSA-N 0.000 description 2
- QQZOPKMRPOGIEB-UHFFFAOYSA-N 2-Oxohexane Chemical compound CCCCC(C)=O QQZOPKMRPOGIEB-UHFFFAOYSA-N 0.000 description 2
- TXBCBTDQIULDIA-UHFFFAOYSA-N 2-[[3-hydroxy-2,2-bis(hydroxymethyl)propoxy]methyl]-2-(hydroxymethyl)propane-1,3-diol Chemical compound OCC(CO)(CO)COCC(CO)(CO)CO TXBCBTDQIULDIA-UHFFFAOYSA-N 0.000 description 2
- YIWUKEYIRIRTPP-UHFFFAOYSA-N 2-ethylhexan-1-ol Chemical compound CCCCC(CC)CO YIWUKEYIRIRTPP-UHFFFAOYSA-N 0.000 description 2
- QPRQEDXDYOZYLA-UHFFFAOYSA-N 2-methylbutan-1-ol Chemical compound CCC(C)CO QPRQEDXDYOZYLA-UHFFFAOYSA-N 0.000 description 2
- SVTBMSDMJJWYQN-UHFFFAOYSA-N 2-methylpentane-2,4-diol Chemical compound CC(O)CC(C)(C)O SVTBMSDMJJWYQN-UHFFFAOYSA-N 0.000 description 2
- LDMRLRNXHLPZJN-UHFFFAOYSA-N 3-propoxypropan-1-ol Chemical compound CCCOCCCO LDMRLRNXHLPZJN-UHFFFAOYSA-N 0.000 description 2
- YEJRWHAVMIAJKC-UHFFFAOYSA-N 4-Butyrolactone Chemical compound O=C1CCCO1 YEJRWHAVMIAJKC-UHFFFAOYSA-N 0.000 description 2
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical group [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 description 2
- OZAIFHULBGXAKX-VAWYXSNFSA-N AIBN Substances N#CC(C)(C)\N=N\C(C)(C)C#N OZAIFHULBGXAKX-VAWYXSNFSA-N 0.000 description 2
- DLFVBJFMPXGRIB-UHFFFAOYSA-N Acetamide Chemical compound CC(N)=O DLFVBJFMPXGRIB-UHFFFAOYSA-N 0.000 description 2
- KWOLFJPFCHCOCG-UHFFFAOYSA-N Acetophenone Chemical compound CC(=O)C1=CC=CC=C1 KWOLFJPFCHCOCG-UHFFFAOYSA-N 0.000 description 2
- HSFWRNGVRCDJHI-UHFFFAOYSA-N Acetylene Chemical compound C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical group [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 2
- RWSOTUBLDIXVET-UHFFFAOYSA-N Dihydrogen sulfide Chemical class S RWSOTUBLDIXVET-UHFFFAOYSA-N 0.000 description 2
- NIQCNGHVCWTJSM-UHFFFAOYSA-N Dimethyl phthalate Chemical compound COC(=O)C1=CC=CC=C1C(=O)OC NIQCNGHVCWTJSM-UHFFFAOYSA-N 0.000 description 2
- 239000004593 Epoxy Chemical class 0.000 description 2
- QUSNBJAOOMFDIB-UHFFFAOYSA-N Ethylamine Chemical compound CCN QUSNBJAOOMFDIB-UHFFFAOYSA-N 0.000 description 2
- WSFSSNUMVMOOMR-UHFFFAOYSA-N Formaldehyde Chemical compound O=C WSFSSNUMVMOOMR-UHFFFAOYSA-N 0.000 description 2
- RZKSECIXORKHQS-UHFFFAOYSA-N Heptan-3-ol Chemical compound CCCCC(O)CC RZKSECIXORKHQS-UHFFFAOYSA-N 0.000 description 2
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 2
- KWYHDKDOAIKMQN-UHFFFAOYSA-N N,N,N',N'-tetramethylethylenediamine Chemical compound CN(C)CCN(C)C KWYHDKDOAIKMQN-UHFFFAOYSA-N 0.000 description 2
- LRHPLDYGYMQRHN-UHFFFAOYSA-N N-Butanol Chemical compound CCCCO LRHPLDYGYMQRHN-UHFFFAOYSA-N 0.000 description 2
- AMQJEAYHLZJPGS-UHFFFAOYSA-N N-Pentanol Chemical compound CCCCCO AMQJEAYHLZJPGS-UHFFFAOYSA-N 0.000 description 2
- ATHHXGZTWNVVOU-UHFFFAOYSA-N N-methylformamide Chemical compound CNC=O ATHHXGZTWNVVOU-UHFFFAOYSA-N 0.000 description 2
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 description 2
- QQONPFPTGQHPMA-UHFFFAOYSA-N Propene Chemical compound CC=C QQONPFPTGQHPMA-UHFFFAOYSA-N 0.000 description 2
- KAESVJOAVNADME-UHFFFAOYSA-N Pyrrole Chemical compound C=1C=CNC=1 KAESVJOAVNADME-UHFFFAOYSA-N 0.000 description 2
- KEAYESYHFKHZAL-UHFFFAOYSA-N Sodium Chemical compound [Na] KEAYESYHFKHZAL-UHFFFAOYSA-N 0.000 description 2
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 2
- 239000004115 Sodium Silicate Substances 0.000 description 2
- DKGAVHZHDRPRBM-UHFFFAOYSA-N Tert-Butanol Chemical compound CC(C)(C)O DKGAVHZHDRPRBM-UHFFFAOYSA-N 0.000 description 2
- DTQVDTLACAAQTR-UHFFFAOYSA-N Trifluoroacetic acid Chemical compound OC(=O)C(F)(F)F DTQVDTLACAAQTR-UHFFFAOYSA-N 0.000 description 2
- CWRYPZZKDGJXCA-UHFFFAOYSA-N acenaphthene Chemical compound C1=CC(CC2)=C3C2=CC=CC3=C1 CWRYPZZKDGJXCA-UHFFFAOYSA-N 0.000 description 2
- GWJBEJFEFFWFBI-UHFFFAOYSA-N acenaphthylen-1-ylmethanol Chemical group C1=CC(C(CO)=C2)=C3C2=CC=CC3=C1 GWJBEJFEFFWFBI-UHFFFAOYSA-N 0.000 description 2
- YRKCREAYFQTBPV-UHFFFAOYSA-N acetylacetone Chemical compound CC(=O)CC(C)=O YRKCREAYFQTBPV-UHFFFAOYSA-N 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- ORILYTVJVMAKLC-UHFFFAOYSA-N adamantane Chemical compound C1C(C2)CC3CC1CC2C3 ORILYTVJVMAKLC-UHFFFAOYSA-N 0.000 description 2
- 239000003513 alkali Substances 0.000 description 2
- 125000004183 alkoxy alkyl group Chemical class 0.000 description 2
- MWPLVEDNUUSJAV-UHFFFAOYSA-N anthracene Chemical compound C1=CC=CC2=CC3=CC=CC=C3C=C21 MWPLVEDNUUSJAV-UHFFFAOYSA-N 0.000 description 2
- 125000005577 anthracene group Chemical group 0.000 description 2
- 125000004429 atom Chemical group 0.000 description 2
- CUFNKYGDVFVPHO-UHFFFAOYSA-N azulene Chemical compound C1=CC=CC2=CC=CC2=C1 CUFNKYGDVFVPHO-UHFFFAOYSA-N 0.000 description 2
- 239000002585 base Substances 0.000 description 2
- QUKGYYKBILRGFE-UHFFFAOYSA-N benzyl acetate Chemical compound CC(=O)OCC1=CC=CC=C1 QUKGYYKBILRGFE-UHFFFAOYSA-N 0.000 description 2
- DNFSNYQTQMVTOK-UHFFFAOYSA-N bis(4-tert-butylphenyl)iodanium Chemical compound C1=CC(C(C)(C)C)=CC=C1[I+]C1=CC=C(C(C)(C)C)C=C1 DNFSNYQTQMVTOK-UHFFFAOYSA-N 0.000 description 2
- KDKYADYSIPSCCQ-UHFFFAOYSA-N but-1-yne Chemical compound CCC#C KDKYADYSIPSCCQ-UHFFFAOYSA-N 0.000 description 2
- BTANRVKWQNVYAZ-UHFFFAOYSA-N butan-2-ol Chemical compound CCC(C)O BTANRVKWQNVYAZ-UHFFFAOYSA-N 0.000 description 2
- 235000019437 butane-1,3-diol Nutrition 0.000 description 2
- WERYXYBDKMZEQL-UHFFFAOYSA-N butane-1,4-diol Chemical compound OCCCCO WERYXYBDKMZEQL-UHFFFAOYSA-N 0.000 description 2
- DKPFZGUDAPQIHT-UHFFFAOYSA-N butyl acetate Chemical compound CCCCOC(C)=O DKPFZGUDAPQIHT-UHFFFAOYSA-N 0.000 description 2
- KBPLFHHGFOOTCA-UHFFFAOYSA-N caprylic alcohol Natural products CCCCCCCCO KBPLFHHGFOOTCA-UHFFFAOYSA-N 0.000 description 2
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 2
- 229910052801 chlorine Inorganic materials 0.000 description 2
- 125000001309 chloro group Chemical group Cl* 0.000 description 2
- WDECIBYCCFPHNR-UHFFFAOYSA-N chrysene Chemical compound C1=CC=CC2=CC=C3C4=CC=CC=C4C=CC3=C21 WDECIBYCCFPHNR-UHFFFAOYSA-N 0.000 description 2
- 125000004093 cyano group Chemical group *C#N 0.000 description 2
- JHIVVAPYMSGYDF-UHFFFAOYSA-N cyclohexanone Chemical compound O=C1CCCCC1 JHIVVAPYMSGYDF-UHFFFAOYSA-N 0.000 description 2
- HGCIXCUEYOPUTN-UHFFFAOYSA-N cyclohexene Chemical compound C1CCC=CC1 HGCIXCUEYOPUTN-UHFFFAOYSA-N 0.000 description 2
- LPIQUOYDBNQMRZ-UHFFFAOYSA-N cyclopentene Chemical compound C1CC=CC1 LPIQUOYDBNQMRZ-UHFFFAOYSA-N 0.000 description 2
- MWKFXSUHUHTGQN-UHFFFAOYSA-N decan-1-ol Chemical compound CCCCCCCCCCO MWKFXSUHUHTGQN-UHFFFAOYSA-N 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- FLKPEMZONWLCSK-UHFFFAOYSA-N diethyl phthalate Chemical compound CCOC(=O)C1=CC=CC=C1C(=O)OCC FLKPEMZONWLCSK-UHFFFAOYSA-N 0.000 description 2
- ZUOUZKKEUPVFJK-UHFFFAOYSA-N diphenyl Chemical compound C1=CC=CC=C1C1=CC=CC=C1 ZUOUZKKEUPVFJK-UHFFFAOYSA-N 0.000 description 2
- SZXQTJUDPRGNJN-UHFFFAOYSA-N dipropylene glycol Chemical compound OCCCOCCCO SZXQTJUDPRGNJN-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- LZCLXQDLBQLTDK-UHFFFAOYSA-N ethyl 2-hydroxypropanoate Chemical compound CCOC(=O)C(C)O LZCLXQDLBQLTDK-UHFFFAOYSA-N 0.000 description 2
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 2
- JBTWLSYIZRCDFO-UHFFFAOYSA-N ethyl methyl carbonate Chemical compound CCOC(=O)OC JBTWLSYIZRCDFO-UHFFFAOYSA-N 0.000 description 2
- FKRCODPIKNYEAC-UHFFFAOYSA-N ethyl propionate Chemical compound CCOC(=O)CC FKRCODPIKNYEAC-UHFFFAOYSA-N 0.000 description 2
- GVEPBJHOBDJJJI-UHFFFAOYSA-N fluoranthrene Natural products C1=CC(C2=CC=CC=C22)=C3C2=CC=CC3=C1 GVEPBJHOBDJJJI-UHFFFAOYSA-N 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 125000001153 fluoro group Chemical group F* 0.000 description 2
- GAEKPEKOJKCEMS-UHFFFAOYSA-N gamma-valerolactone Chemical compound CC1CCC(=O)O1 GAEKPEKOJKCEMS-UHFFFAOYSA-N 0.000 description 2
- 235000011187 glycerol Nutrition 0.000 description 2
- VPVSTMAPERLKKM-UHFFFAOYSA-N glycoluril Chemical compound N1C(=O)NC2NC(=O)NC21 VPVSTMAPERLKKM-UHFFFAOYSA-N 0.000 description 2
- GOQYKNQRPGWPLP-UHFFFAOYSA-N heptadecan-1-ol Chemical compound CCCCCCCCCCCCCCCCCO GOQYKNQRPGWPLP-UHFFFAOYSA-N 0.000 description 2
- CATSNJVOTSVZJV-UHFFFAOYSA-N heptan-2-one Chemical compound CCCCCC(C)=O CATSNJVOTSVZJV-UHFFFAOYSA-N 0.000 description 2
- NGAZZOYFWWSOGK-UHFFFAOYSA-N heptan-3-one Chemical compound CCCCC(=O)CC NGAZZOYFWWSOGK-UHFFFAOYSA-N 0.000 description 2
- ZSIAUFGUXNUGDI-UHFFFAOYSA-N hexan-1-ol Chemical compound CCCCCCO ZSIAUFGUXNUGDI-UHFFFAOYSA-N 0.000 description 2
- 125000004029 hydroxymethyl group Chemical group [H]OC([H])([H])* 0.000 description 2
- 229910052740 iodine Inorganic materials 0.000 description 2
- INQOMBQAUSQDDS-UHFFFAOYSA-N iodomethane Chemical compound IC INQOMBQAUSQDDS-UHFFFAOYSA-N 0.000 description 2
- 238000010884 ion-beam technique Methods 0.000 description 2
- XAOGXQMKWQFZEM-UHFFFAOYSA-N isoamyl propanoate Chemical compound CCC(=O)OCCC(C)C XAOGXQMKWQFZEM-UHFFFAOYSA-N 0.000 description 2
- ZXEKIIBDNHEJCQ-UHFFFAOYSA-N isobutanol Chemical compound CC(C)CO ZXEKIIBDNHEJCQ-UHFFFAOYSA-N 0.000 description 2
- RLSSMJSEOOYNOY-UHFFFAOYSA-N m-cresol Chemical compound CC1=CC=CC(O)=C1 RLSSMJSEOOYNOY-UHFFFAOYSA-N 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 2
- ZWRUINPWMLAQRD-UHFFFAOYSA-N nonan-1-ol Chemical compound CCCCCCCCCO ZWRUINPWMLAQRD-UHFFFAOYSA-N 0.000 description 2
- GJQIMXVRFNLMTB-UHFFFAOYSA-N nonyl acetate Chemical compound CCCCCCCCCOC(C)=O GJQIMXVRFNLMTB-UHFFFAOYSA-N 0.000 description 2
- 150000002894 organic compounds Chemical class 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- WXZMFSXDPGVJKK-UHFFFAOYSA-N pentaerythritol Chemical compound OCC(CO)(CO)CO WXZMFSXDPGVJKK-UHFFFAOYSA-N 0.000 description 2
- XNLICIUVMPYHGG-UHFFFAOYSA-N pentan-2-one Chemical compound CCCC(C)=O XNLICIUVMPYHGG-UHFFFAOYSA-N 0.000 description 2
- FDPIMTJIUBPUKL-UHFFFAOYSA-N pentan-3-one Chemical compound CCC(=O)CC FDPIMTJIUBPUKL-UHFFFAOYSA-N 0.000 description 2
- YNPNZTXNASCQKK-UHFFFAOYSA-N phenanthrene Chemical compound C1=CC=C2C3=CC=CC=C3C=CC2=C1 YNPNZTXNASCQKK-UHFFFAOYSA-N 0.000 description 2
- GBROPGWFBFCKAG-UHFFFAOYSA-N picene Chemical compound C1=CC2=C3C=CC=CC3=CC=C2C2=C1C1=CC=CC=C1C=C2 GBROPGWFBFCKAG-UHFFFAOYSA-N 0.000 description 2
- 238000006116 polymerization reaction Methods 0.000 description 2
- 239000011148 porous material Substances 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- BDERNNFJNOPAEC-UHFFFAOYSA-N propan-1-ol Chemical compound CCCO BDERNNFJNOPAEC-UHFFFAOYSA-N 0.000 description 2
- YORCIIVHUBAYBQ-UHFFFAOYSA-N propargyl bromide Chemical compound BrCC#C YORCIIVHUBAYBQ-UHFFFAOYSA-N 0.000 description 2
- YKYONYBAUNKHLG-UHFFFAOYSA-N propyl acetate Chemical compound CCCOC(C)=O YKYONYBAUNKHLG-UHFFFAOYSA-N 0.000 description 2
- WGYKZJWCGVVSQN-UHFFFAOYSA-N propylamine Chemical compound CCCN WGYKZJWCGVVSQN-UHFFFAOYSA-N 0.000 description 2
- 229960004063 propylene glycol Drugs 0.000 description 2
- 125000005581 pyrene group Chemical group 0.000 description 2
- 125000001725 pyrenyl group Chemical group 0.000 description 2
- 229920005604 random copolymer Polymers 0.000 description 2
- 230000007261 regionalization Effects 0.000 description 2
- 229930195734 saturated hydrocarbon Natural products 0.000 description 2
- 239000012312 sodium hydride Substances 0.000 description 2
- 229910000104 sodium hydride Inorganic materials 0.000 description 2
- NTHWMYGWWRZVTN-UHFFFAOYSA-N sodium silicate Chemical compound [Na+].[Na+].[O-][Si]([O-])=O NTHWMYGWWRZVTN-UHFFFAOYSA-N 0.000 description 2
- 229910052911 sodium silicate Inorganic materials 0.000 description 2
- 238000003786 synthesis reaction Methods 0.000 description 2
- RAOIDOHSFRTOEL-UHFFFAOYSA-N tetrahydrothiophene Chemical class C1CCSC1 RAOIDOHSFRTOEL-UHFFFAOYSA-N 0.000 description 2
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 2
- ZMANZCXQSJIPKH-UHFFFAOYSA-O triethylammonium ion Chemical compound CC[NH+](CC)CC ZMANZCXQSJIPKH-UHFFFAOYSA-O 0.000 description 2
- ZIBGPFATKBEMQZ-UHFFFAOYSA-N triethylene glycol Chemical compound OCCOCCOCCO ZIBGPFATKBEMQZ-UHFFFAOYSA-N 0.000 description 2
- PGXOVVAJURGPLL-UHFFFAOYSA-N trinaphthylene Chemical group C1=CC=C2C=C3C4=CC5=CC=CC=C5C=C4C4=CC5=CC=CC=C5C=C4C3=CC2=C1 PGXOVVAJURGPLL-UHFFFAOYSA-N 0.000 description 2
- 229930195735 unsaturated hydrocarbon Natural products 0.000 description 2
- 238000005406 washing Methods 0.000 description 2
- JYPFUPZGMLOPAJ-UHFFFAOYSA-N (3,5-dioxo-4-azatricyclo[5.2.1.02,6]dec-8-en-4-yl) 2-(2-bicyclo[2.2.1]heptanyl)-1,1,2,2-tetrafluoroethanesulfonate Chemical compound C1=CC2CC1C(C1=O)C2C(=O)N1OS(=O)(=O)C(F)(F)C(F)(F)C1C(C2)CCC2C1 JYPFUPZGMLOPAJ-UHFFFAOYSA-N 0.000 description 1
- XNUYPROIFFCXAE-UHFFFAOYSA-N (4-cyclohexylphenyl)-diphenylsulfanium Chemical compound C1CCCCC1C1=CC=C([S+](C=2C=CC=CC=2)C=2C=CC=CC=2)C=C1 XNUYPROIFFCXAE-UHFFFAOYSA-N 0.000 description 1
- UFADEYDBOXASBQ-UHFFFAOYSA-M (4-cyclohexylphenyl)-diphenylsulfanium;1,1,2,2,3,3,4,4,4-nonafluorobutane-1-sulfonate Chemical compound [O-]S(=O)(=O)C(F)(F)C(F)(F)C(F)(F)C(F)(F)F.C1CCCCC1C1=CC=C([S+](C=2C=CC=CC=2)C=2C=CC=CC=2)C=C1 UFADEYDBOXASBQ-UHFFFAOYSA-M 0.000 description 1
- QEYKXSMQZGHJSX-UHFFFAOYSA-M (4-cyclohexylphenyl)-diphenylsulfanium;trifluoromethanesulfonate Chemical compound [O-]S(=O)(=O)C(F)(F)F.C1CCCCC1C1=CC=C([S+](C=2C=CC=CC=2)C=2C=CC=CC=2)C=C1 QEYKXSMQZGHJSX-UHFFFAOYSA-M 0.000 description 1
- HQGTWZUOVIZAKX-UHFFFAOYSA-N (4-methylsulfonylphenyl)-diphenylsulfanium Chemical compound C1=CC(S(=O)(=O)C)=CC=C1[S+](C=1C=CC=CC=1)C1=CC=CC=C1 HQGTWZUOVIZAKX-UHFFFAOYSA-N 0.000 description 1
- VKOHBZXAXOVWQU-UHFFFAOYSA-M (4-methylsulfonylphenyl)-diphenylsulfanium;1,1,2,2,3,3,4,4,4-nonafluorobutane-1-sulfonate Chemical compound [O-]S(=O)(=O)C(F)(F)C(F)(F)C(F)(F)C(F)(F)F.C1=CC(S(=O)(=O)C)=CC=C1[S+](C=1C=CC=CC=1)C1=CC=CC=C1 VKOHBZXAXOVWQU-UHFFFAOYSA-M 0.000 description 1
- CFRRWRASBDSKBI-UHFFFAOYSA-M (4-methylsulfonylphenyl)-diphenylsulfanium;trifluoromethanesulfonate Chemical compound [O-]S(=O)(=O)C(F)(F)F.C1=CC(S(=O)(=O)C)=CC=C1[S+](C=1C=CC=CC=1)C1=CC=CC=C1 CFRRWRASBDSKBI-UHFFFAOYSA-M 0.000 description 1
- FFJCNSLCJOQHKM-CLFAGFIQSA-N (z)-1-[(z)-octadec-9-enoxy]octadec-9-ene Chemical compound CCCCCCCC\C=C/CCCCCCCCOCCCCCCCC\C=C/CCCCCCCC FFJCNSLCJOQHKM-CLFAGFIQSA-N 0.000 description 1
- IYWOUSAHIBBZAJ-UHFFFAOYSA-N 1,1,2,2,3,3,4,4,4-nonafluorobutane-1-sulfonate trimethylazanium Chemical compound C[NH+](C)C.[O-]S(=O)(=O)C(F)(F)C(F)(F)C(F)(F)C(F)(F)F IYWOUSAHIBBZAJ-UHFFFAOYSA-N 0.000 description 1
- QTRJKFBGNXKFFF-UHFFFAOYSA-M 1,1,2,2,3,3,4,4,4-nonafluorobutane-1-sulfonate;tetraethylazanium Chemical compound CC[N+](CC)(CC)CC.[O-]S(=O)(=O)C(F)(F)C(F)(F)C(F)(F)C(F)(F)F QTRJKFBGNXKFFF-UHFFFAOYSA-M 0.000 description 1
- CKXILIWMLCYNIX-UHFFFAOYSA-N 1,1,2,2,3,3,4,4,4-nonafluorobutane-1-sulfonate;triethylazanium Chemical compound CC[NH+](CC)CC.[O-]S(=O)(=O)C(F)(F)C(F)(F)C(F)(F)C(F)(F)F CKXILIWMLCYNIX-UHFFFAOYSA-N 0.000 description 1
- VLLPVDKADBYKLM-UHFFFAOYSA-M 1,1,2,2,3,3,4,4,4-nonafluorobutane-1-sulfonate;triphenylsulfanium Chemical compound [O-]S(=O)(=O)C(F)(F)C(F)(F)C(F)(F)C(F)(F)F.C1=CC=CC=C1[S+](C=1C=CC=CC=1)C1=CC=CC=C1 VLLPVDKADBYKLM-UHFFFAOYSA-M 0.000 description 1
- LZDKZFUFMNSQCJ-UHFFFAOYSA-N 1,2-diethoxyethane Chemical compound CCOCCOCC LZDKZFUFMNSQCJ-UHFFFAOYSA-N 0.000 description 1
- XGQJGMGAMHFMAO-UHFFFAOYSA-N 1,3,4,6-tetrakis(methoxymethyl)-3a,6a-dihydroimidazo[4,5-d]imidazole-2,5-dione Chemical compound COCN1C(=O)N(COC)C2C1N(COC)C(=O)N2COC XGQJGMGAMHFMAO-UHFFFAOYSA-N 0.000 description 1
- BPXVHIRIPLPOPT-UHFFFAOYSA-N 1,3,5-tris(2-hydroxyethyl)-1,3,5-triazinane-2,4,6-trione Chemical compound OCCN1C(=O)N(CCO)C(=O)N(CCO)C1=O BPXVHIRIPLPOPT-UHFFFAOYSA-N 0.000 description 1
- 229940058015 1,3-butylene glycol Drugs 0.000 description 1
- WNXJIVFYUVYPPR-UHFFFAOYSA-N 1,3-dioxolane Chemical compound C1COCO1 WNXJIVFYUVYPPR-UHFFFAOYSA-N 0.000 description 1
- RYHBNJHYFVUHQT-UHFFFAOYSA-N 1,4-Dioxane Chemical compound C1COCCO1 RYHBNJHYFVUHQT-UHFFFAOYSA-N 0.000 description 1
- SGUVLZREKBPKCE-UHFFFAOYSA-N 1,5-diazabicyclo[4.3.0]-non-5-ene Chemical compound C1CCN=C2CCCN21 SGUVLZREKBPKCE-UHFFFAOYSA-N 0.000 description 1
- QWOZZTWBWQMEPD-UHFFFAOYSA-N 1-(2-ethoxypropoxy)propan-2-ol Chemical compound CCOC(C)COCC(C)O QWOZZTWBWQMEPD-UHFFFAOYSA-N 0.000 description 1
- QWQSMULDBZYCRX-UHFFFAOYSA-N 1-(2-phenylphenyl)-1,2-dihydroacenaphthylene Chemical group C1(CC2=CC=CC3=CC=CC1=C23)C1=C(C=CC=C1)C1=CC=CC=C1 QWQSMULDBZYCRX-UHFFFAOYSA-N 0.000 description 1
- YIWGJFPJRAEKMK-UHFFFAOYSA-N 1-(2H-benzotriazol-5-yl)-3-methyl-8-[2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidine-5-carbonyl]-1,3,8-triazaspiro[4.5]decane-2,4-dione Chemical compound CN1C(=O)N(c2ccc3n[nH]nc3c2)C2(CCN(CC2)C(=O)c2cnc(NCc3cccc(OC(F)(F)F)c3)nc2)C1=O YIWGJFPJRAEKMK-UHFFFAOYSA-N 0.000 description 1
- JQIQJUCEFIYYOJ-UHFFFAOYSA-M 1-(4-butoxynaphthalen-1-yl)thiolan-1-ium;trifluoromethanesulfonate Chemical compound [O-]S(=O)(=O)C(F)(F)F.C12=CC=CC=C2C(OCCCC)=CC=C1[S+]1CCCC1 JQIQJUCEFIYYOJ-UHFFFAOYSA-M 0.000 description 1
- WXWSNMWMJAFDLG-UHFFFAOYSA-N 1-(6-butoxynaphthalen-2-yl)thiolan-1-ium Chemical compound C1=CC2=CC(OCCCC)=CC=C2C=C1[S+]1CCCC1 WXWSNMWMJAFDLG-UHFFFAOYSA-N 0.000 description 1
- WFZZYWQSLJQVOT-UHFFFAOYSA-M 1-(6-butoxynaphthalen-2-yl)thiolan-1-ium;trifluoromethanesulfonate Chemical compound [O-]S(=O)(=O)C(F)(F)F.C1=CC2=CC(OCCCC)=CC=C2C=C1[S+]1CCCC1 WFZZYWQSLJQVOT-UHFFFAOYSA-M 0.000 description 1
- VXNZUUAINFGPBY-UHFFFAOYSA-N 1-Butene Chemical compound CCC=C VXNZUUAINFGPBY-UHFFFAOYSA-N 0.000 description 1
- MQGIBEAIDUOVOH-UHFFFAOYSA-N 1-[2-[2-[2-(2-butoxyethoxy)ethoxy]ethoxy]ethoxy]butane Chemical compound CCCCOCCOCCOCCOCCOCCCC MQGIBEAIDUOVOH-UHFFFAOYSA-N 0.000 description 1
- DURPTKYDGMDSBL-UHFFFAOYSA-N 1-butoxybutane Chemical compound CCCCOCCCC DURPTKYDGMDSBL-UHFFFAOYSA-N 0.000 description 1
- RWNUSVWFHDHRCJ-UHFFFAOYSA-N 1-butoxypropan-2-ol Chemical compound CCCCOCC(C)O RWNUSVWFHDHRCJ-UHFFFAOYSA-N 0.000 description 1
- FUWDFGKRNIDKAE-UHFFFAOYSA-N 1-butoxypropan-2-yl acetate Chemical compound CCCCOCC(C)OC(C)=O FUWDFGKRNIDKAE-UHFFFAOYSA-N 0.000 description 1
- RRQYJINTUHWNHW-UHFFFAOYSA-N 1-ethoxy-2-(2-ethoxyethoxy)ethane Chemical compound CCOCCOCCOCC RRQYJINTUHWNHW-UHFFFAOYSA-N 0.000 description 1
- BPIUIOXAFBGMNB-UHFFFAOYSA-N 1-hexoxyhexane Chemical compound CCCCCCOCCCCCC BPIUIOXAFBGMNB-UHFFFAOYSA-N 0.000 description 1
- IBLKWZIFZMJLFL-UHFFFAOYSA-N 1-phenoxypropan-2-ol Chemical compound CC(O)COC1=CC=CC=C1 IBLKWZIFZMJLFL-UHFFFAOYSA-N 0.000 description 1
- WAPNOHKVXSQRPX-UHFFFAOYSA-N 1-phenylethanol Chemical compound CC(O)C1=CC=CC=C1 WAPNOHKVXSQRPX-UHFFFAOYSA-N 0.000 description 1
- DMFAHCVITRDZQB-UHFFFAOYSA-N 1-propoxypropan-2-yl acetate Chemical compound CCCOCC(C)OC(C)=O DMFAHCVITRDZQB-UHFFFAOYSA-N 0.000 description 1
- LTMRRSWNXVJMBA-UHFFFAOYSA-L 2,2-diethylpropanedioate Chemical compound CCC(CC)(C([O-])=O)C([O-])=O LTMRRSWNXVJMBA-UHFFFAOYSA-L 0.000 description 1
- GQHTUMJGOHRCHB-UHFFFAOYSA-N 2,3,4,6,7,8,9,10-octahydropyrimido[1,2-a]azepine Chemical compound C1CCCCN2CCCN=C21 GQHTUMJGOHRCHB-UHFFFAOYSA-N 0.000 description 1
- AWBIJARKDOFDAN-UHFFFAOYSA-N 2,5-dimethyl-1,4-dioxane Chemical compound CC1COC(C)CO1 AWBIJARKDOFDAN-UHFFFAOYSA-N 0.000 description 1
- DLPUEGQGTYQADT-UHFFFAOYSA-N 2,6-bis(hydroxymethyl)-4-methylphenol [3-(hydroxymethyl)-2-methoxy-5-methylphenyl]methanol Chemical compound OCC1=CC(=CC(=C1O)CO)C.OCC=1C=C(C=C(C1OC)CO)C DLPUEGQGTYQADT-UHFFFAOYSA-N 0.000 description 1
- WFQNMENFJSZTGD-UHFFFAOYSA-O 2,6-dimethyl-4-(thiolan-1-ium-1-yl)phenol Chemical compound CC1=C(O)C(C)=CC([S+]2CCCC2)=C1 WFQNMENFJSZTGD-UHFFFAOYSA-O 0.000 description 1
- GNZYDSUXCMLOMM-UHFFFAOYSA-N 2,6-dimethyl-4-(thiolan-1-ium-1-yl)phenol;1,1,2,2,3,3,4,4,4-nonafluorobutane-1-sulfonate Chemical compound CC1=C(O)C(C)=CC([S+]2CCCC2)=C1.[O-]S(=O)(=O)C(F)(F)C(F)(F)C(F)(F)C(F)(F)F GNZYDSUXCMLOMM-UHFFFAOYSA-N 0.000 description 1
- VAOHUAFTTHSCRT-UHFFFAOYSA-N 2,6-dimethyl-4-(thiolan-1-ium-1-yl)phenol;trifluoromethanesulfonate Chemical compound [O-]S(=O)(=O)C(F)(F)F.CC1=C(O)C(C)=CC([S+]2CCCC2)=C1 VAOHUAFTTHSCRT-UHFFFAOYSA-N 0.000 description 1
- OAYXUHPQHDHDDZ-UHFFFAOYSA-N 2-(2-butoxyethoxy)ethanol Chemical compound CCCCOCCOCCO OAYXUHPQHDHDDZ-UHFFFAOYSA-N 0.000 description 1
- FPZWZCWUIYYYBU-UHFFFAOYSA-N 2-(2-ethoxyethoxy)ethyl acetate Chemical compound CCOCCOCCOC(C)=O FPZWZCWUIYYYBU-UHFFFAOYSA-N 0.000 description 1
- CKCGJBFTCUCBAJ-UHFFFAOYSA-N 2-(2-ethoxypropoxy)propyl acetate Chemical compound CCOC(C)COC(C)COC(C)=O CKCGJBFTCUCBAJ-UHFFFAOYSA-N 0.000 description 1
- ZKCAGDPACLOVBN-UHFFFAOYSA-N 2-(2-ethylbutoxy)ethanol Chemical compound CCC(CC)COCCO ZKCAGDPACLOVBN-UHFFFAOYSA-N 0.000 description 1
- GZMAAYIALGURDQ-UHFFFAOYSA-N 2-(2-hexoxyethoxy)ethanol Chemical compound CCCCCCOCCOCCO GZMAAYIALGURDQ-UHFFFAOYSA-N 0.000 description 1
- SBASXUCJHJRPEV-UHFFFAOYSA-N 2-(2-methoxyethoxy)ethanol Chemical compound COCCOCCO SBASXUCJHJRPEV-UHFFFAOYSA-N 0.000 description 1
- BJINVQNEBGOMCR-UHFFFAOYSA-N 2-(2-methoxyethoxy)ethyl acetate Chemical compound COCCOCCOC(C)=O BJINVQNEBGOMCR-UHFFFAOYSA-N 0.000 description 1
- DRLRGHZJOQGQEC-UHFFFAOYSA-N 2-(2-methoxypropoxy)propyl acetate Chemical compound COC(C)COC(C)COC(C)=O DRLRGHZJOQGQEC-UHFFFAOYSA-N 0.000 description 1
- XYVAYAJYLWYJJN-UHFFFAOYSA-N 2-(2-propoxypropoxy)propan-1-ol Chemical compound CCCOC(C)COC(C)CO XYVAYAJYLWYJJN-UHFFFAOYSA-N 0.000 description 1
- ZDVZUTSFCLMPMB-UHFFFAOYSA-M 2-(3-bicyclo[2.2.1]heptanyl)-1,1,2,2-tetrafluoroethanesulfonate;(4-cyclohexylphenyl)-diphenylsulfanium Chemical compound C1CC2C(C(F)(F)C(F)(F)S(=O)(=O)[O-])CC1C2.C1CCCCC1C1=CC=C([S+](C=2C=CC=CC=2)C=2C=CC=CC=2)C=C1 ZDVZUTSFCLMPMB-UHFFFAOYSA-M 0.000 description 1
- CIEPNGYYAZJVPI-UHFFFAOYSA-M 2-(3-bicyclo[2.2.1]heptanyl)-1,1,2,2-tetrafluoroethanesulfonate;(4-methylsulfonylphenyl)-diphenylsulfanium Chemical compound C1CC2C(C(F)(F)C(F)(F)S(=O)(=O)[O-])CC1C2.C1=CC(S(=O)(=O)C)=CC=C1[S+](C=1C=CC=CC=1)C1=CC=CC=C1 CIEPNGYYAZJVPI-UHFFFAOYSA-M 0.000 description 1
- JDUWLFYXEJGUET-UHFFFAOYSA-N 2-(3-bicyclo[2.2.1]heptanyl)-1,1,2,2-tetrafluoroethanesulfonate;2,6-dimethyl-4-(thiolan-1-ium-1-yl)phenol Chemical compound CC1=C(O)C(C)=CC([S+]2CCCC2)=C1.C1CC2C(C(F)(F)C(F)(F)S(=O)(=O)[O-])CC1C2 JDUWLFYXEJGUET-UHFFFAOYSA-N 0.000 description 1
- FUARBSGJOAXCCL-UHFFFAOYSA-M 2-(3-bicyclo[2.2.1]heptanyl)-1,1,2,2-tetrafluoroethanesulfonate;diphenyliodanium Chemical compound C=1C=CC=CC=1[I+]C1=CC=CC=C1.C1CC2C(C(F)(F)C(F)(F)S(=O)(=O)[O-])CC1C2 FUARBSGJOAXCCL-UHFFFAOYSA-M 0.000 description 1
- UGPGTPFKDHHHIQ-UHFFFAOYSA-N 2-(3-bicyclo[2.2.1]heptanyl)-1,1,2,2-tetrafluoroethanesulfonate;triethylazanium Chemical compound CC[NH+](CC)CC.C1CC2C(C(F)(F)C(F)(F)S(=O)(=O)[O-])CC1C2 UGPGTPFKDHHHIQ-UHFFFAOYSA-N 0.000 description 1
- SPBNQWDOUKTPIC-UHFFFAOYSA-M 2-(3-bicyclo[2.2.1]heptanyl)-1,1,2,2-tetrafluoroethanesulfonate;triphenylsulfanium Chemical compound C1CC2C(C(F)(F)C(F)(F)S(=O)(=O)[O-])CC1C2.C1=CC=CC=C1[S+](C=1C=CC=CC=1)C1=CC=CC=C1 SPBNQWDOUKTPIC-UHFFFAOYSA-M 0.000 description 1
- MWGGRRBSDWVAEF-UHFFFAOYSA-N 2-(hydroxymethyl)-4,6-dimethylphenol Chemical compound CC1=CC(C)=C(O)C(CO)=C1 MWGGRRBSDWVAEF-UHFFFAOYSA-N 0.000 description 1
- HQLKZWRSOHTERR-UHFFFAOYSA-N 2-Ethylbutyl acetate Chemical compound CCC(CC)COC(C)=O HQLKZWRSOHTERR-UHFFFAOYSA-N 0.000 description 1
- PTTPXKJBFFKCEK-UHFFFAOYSA-N 2-Methyl-4-heptanone Chemical compound CC(C)CC(=O)CC(C)C PTTPXKJBFFKCEK-UHFFFAOYSA-N 0.000 description 1
- GQKZRWSUJHVIPE-UHFFFAOYSA-N 2-Pentanol acetate Chemical compound CCCC(C)OC(C)=O GQKZRWSUJHVIPE-UHFFFAOYSA-N 0.000 description 1
- WMYINDVYGQKYMI-UHFFFAOYSA-N 2-[2,2-bis(hydroxymethyl)butoxymethyl]-2-ethylpropane-1,3-diol Chemical compound CCC(CO)(CO)COCC(CC)(CO)CO WMYINDVYGQKYMI-UHFFFAOYSA-N 0.000 description 1
- WFSMVVDJSNMRAR-UHFFFAOYSA-N 2-[2-(2-ethoxyethoxy)ethoxy]ethanol Chemical compound CCOCCOCCOCCO WFSMVVDJSNMRAR-UHFFFAOYSA-N 0.000 description 1
- LCZVSXRMYJUNFX-UHFFFAOYSA-N 2-[2-(2-hydroxypropoxy)propoxy]propan-1-ol Chemical compound CC(O)COC(C)COC(C)CO LCZVSXRMYJUNFX-UHFFFAOYSA-N 0.000 description 1
- WAEVWDZKMBQDEJ-UHFFFAOYSA-N 2-[2-(2-methoxypropoxy)propoxy]propan-1-ol Chemical compound COC(C)COC(C)COC(C)CO WAEVWDZKMBQDEJ-UHFFFAOYSA-N 0.000 description 1
- JTXMVXSTHSMVQF-UHFFFAOYSA-N 2-acetyloxyethyl acetate Chemical compound CC(=O)OCCOC(C)=O JTXMVXSTHSMVQF-UHFFFAOYSA-N 0.000 description 1
- POAOYUHQDCAZBD-UHFFFAOYSA-N 2-butoxyethanol Chemical compound CCCCOCCO POAOYUHQDCAZBD-UHFFFAOYSA-N 0.000 description 1
- CDMIQAIIIBPTRK-UHFFFAOYSA-N 2-butoxynaphthalene Chemical compound C1=CC=CC2=CC(OCCCC)=CC=C21 CDMIQAIIIBPTRK-UHFFFAOYSA-N 0.000 description 1
- ZVUNTIMPQCQCAQ-UHFFFAOYSA-N 2-dodecanoyloxyethyl dodecanoate Chemical compound CCCCCCCCCCCC(=O)OCCOC(=O)CCCCCCCCCCC ZVUNTIMPQCQCAQ-UHFFFAOYSA-N 0.000 description 1
- ZNQVEEAIQZEUHB-UHFFFAOYSA-N 2-ethoxyethanol Chemical compound CCOCCO ZNQVEEAIQZEUHB-UHFFFAOYSA-N 0.000 description 1
- 229940093475 2-ethoxyethanol Drugs 0.000 description 1
- TZYRSLHNPKPEFV-UHFFFAOYSA-N 2-ethyl-1-butanol Chemical compound CCC(CC)CO TZYRSLHNPKPEFV-UHFFFAOYSA-N 0.000 description 1
- WOYWLLHHWAMFCB-UHFFFAOYSA-N 2-ethylhexyl acetate Chemical compound CCCCC(CC)COC(C)=O WOYWLLHHWAMFCB-UHFFFAOYSA-N 0.000 description 1
- CETWDUZRCINIHU-UHFFFAOYSA-N 2-heptanol Chemical compound CCCCCC(C)O CETWDUZRCINIHU-UHFFFAOYSA-N 0.000 description 1
- UPGSWASWQBLSKZ-UHFFFAOYSA-N 2-hexoxyethanol Chemical compound CCCCCCOCCO UPGSWASWQBLSKZ-UHFFFAOYSA-N 0.000 description 1
- 125000000954 2-hydroxyethyl group Chemical group [H]C([*])([H])C([H])([H])O[H] 0.000 description 1
- PFNHSEQQEPMLNI-UHFFFAOYSA-N 2-methyl-1-pentanol Chemical compound CCCC(C)CO PFNHSEQQEPMLNI-UHFFFAOYSA-N 0.000 description 1
- MSXVEPNJUHWQHW-UHFFFAOYSA-N 2-methylbutan-2-ol Chemical compound CCC(C)(C)O MSXVEPNJUHWQHW-UHFFFAOYSA-N 0.000 description 1
- QTWJRLJHJPIABL-UHFFFAOYSA-N 2-methylphenol;3-methylphenol;4-methylphenol Chemical compound CC1=CC=C(O)C=C1.CC1=CC=CC(O)=C1.CC1=CC=CC=C1O QTWJRLJHJPIABL-UHFFFAOYSA-N 0.000 description 1
- JWUJQDFVADABEY-UHFFFAOYSA-N 2-methyltetrahydrofuran Chemical compound CC1CCCO1 JWUJQDFVADABEY-UHFFFAOYSA-N 0.000 description 1
- QCDWFXQBSFUVSP-UHFFFAOYSA-N 2-phenoxyethanol Chemical compound OCCOC1=CC=CC=C1 QCDWFXQBSFUVSP-UHFFFAOYSA-N 0.000 description 1
- BRRVXFOKWJKTGG-UHFFFAOYSA-N 3,3,5-trimethylcyclohexanol Chemical compound CC1CC(O)CC(C)(C)C1 BRRVXFOKWJKTGG-UHFFFAOYSA-N 0.000 description 1
- PKNKULBDCRZSBT-UHFFFAOYSA-N 3,4,5-trimethylnonan-2-one Chemical compound CCCCC(C)C(C)C(C)C(C)=O PKNKULBDCRZSBT-UHFFFAOYSA-N 0.000 description 1
- YHCCCMIWRBJYHG-UHFFFAOYSA-N 3-(2-ethylhexoxymethyl)heptane Chemical compound CCCCC(CC)COCC(CC)CCCC YHCCCMIWRBJYHG-UHFFFAOYSA-N 0.000 description 1
- QCAHUFWKIQLBNB-UHFFFAOYSA-N 3-(3-methoxypropoxy)propan-1-ol Chemical compound COCCCOCCCO QCAHUFWKIQLBNB-UHFFFAOYSA-N 0.000 description 1
- JSGVZVOGOQILFM-UHFFFAOYSA-N 3-methoxy-1-butanol Chemical compound COC(C)CCO JSGVZVOGOQILFM-UHFFFAOYSA-N 0.000 description 1
- QMYGFTJCQFEDST-UHFFFAOYSA-N 3-methoxybutyl acetate Chemical compound COC(C)CCOC(C)=O QMYGFTJCQFEDST-UHFFFAOYSA-N 0.000 description 1
- GPIUUMROPXDNRH-UHFFFAOYSA-N 3647-74-3 Chemical compound C1C2C3C(=O)NC(=O)C3C1C=C2 GPIUUMROPXDNRH-UHFFFAOYSA-N 0.000 description 1
- WTQZSMDDRMKJRI-UHFFFAOYSA-N 4-diazoniophenolate Chemical compound [O-]C1=CC=C([N+]#N)C=C1 WTQZSMDDRMKJRI-UHFFFAOYSA-N 0.000 description 1
- MQWCXKGKQLNYQG-UHFFFAOYSA-N 4-methylcyclohexan-1-ol Chemical compound CC1CCC(O)CC1 MQWCXKGKQLNYQG-UHFFFAOYSA-N 0.000 description 1
- VGVHNLRUAMRIEW-UHFFFAOYSA-N 4-methylcyclohexan-1-one Chemical compound CC1CCC(=O)CC1 VGVHNLRUAMRIEW-UHFFFAOYSA-N 0.000 description 1
- LBKMJZAKWQTTHC-UHFFFAOYSA-N 4-methyldioxolane Chemical compound CC1COOC1 LBKMJZAKWQTTHC-UHFFFAOYSA-N 0.000 description 1
- GZVHEAJQGPRDLQ-UHFFFAOYSA-N 6-phenyl-1,3,5-triazine-2,4-diamine Chemical compound NC1=NC(N)=NC(C=2C=CC=CC=2)=N1 GZVHEAJQGPRDLQ-UHFFFAOYSA-N 0.000 description 1
- LPEKGGXMPWTOCB-UHFFFAOYSA-N 8beta-(2,3-epoxy-2-methylbutyryloxy)-14-acetoxytithifolin Natural products COC(=O)C(C)O LPEKGGXMPWTOCB-UHFFFAOYSA-N 0.000 description 1
- OSDWBNJEKMUWAV-UHFFFAOYSA-N Allyl chloride Chemical compound ClCC=C OSDWBNJEKMUWAV-UHFFFAOYSA-N 0.000 description 1
- 101100215341 Arabidopsis thaliana ACT12 gene Proteins 0.000 description 1
- 229930185605 Bisphenol Natural products 0.000 description 1
- MRABAEUHTLLEML-UHFFFAOYSA-N Butyl lactate Chemical compound CCCCOC(=O)C(C)O MRABAEUHTLLEML-UHFFFAOYSA-N 0.000 description 1
- DPWZPTOHZTVVDP-UHFFFAOYSA-N C12C(CC(CC1)C2)C(C(S(=O)(=O)[O-])(F)F)(F)F.[SH+]2CCCC2 Chemical compound C12C(CC(CC1)C2)C(C(S(=O)(=O)[O-])(F)F)(F)F.[SH+]2CCCC2 DPWZPTOHZTVVDP-UHFFFAOYSA-N 0.000 description 1
- 239000004215 Carbon black (E152) Substances 0.000 description 1
- 239000004971 Cross linker Substances 0.000 description 1
- YYLLIJHXUHJATK-UHFFFAOYSA-N Cyclohexyl acetate Chemical compound CC(=O)OC1CCCCC1 YYLLIJHXUHJATK-UHFFFAOYSA-N 0.000 description 1
- OIFBSDVPJOWBCH-UHFFFAOYSA-N Diethyl carbonate Chemical compound CCOC(=O)OCC OIFBSDVPJOWBCH-UHFFFAOYSA-N 0.000 description 1
- HXQPUEQDBSPXTE-UHFFFAOYSA-N Diisobutylcarbinol Chemical compound CC(C)CC(O)CC(C)C HXQPUEQDBSPXTE-UHFFFAOYSA-N 0.000 description 1
- ZAFNJMIOTHYJRJ-UHFFFAOYSA-N Diisopropyl ether Chemical compound CC(C)OC(C)C ZAFNJMIOTHYJRJ-UHFFFAOYSA-N 0.000 description 1
- OTMSDBZUPAUEDD-UHFFFAOYSA-N Ethane Chemical compound CC OTMSDBZUPAUEDD-UHFFFAOYSA-N 0.000 description 1
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 1
- FPVVYTCTZKCSOJ-UHFFFAOYSA-N Ethylene glycol distearate Chemical compound CCCCCCCCCCCCCCCCCC(=O)OCCOC(=O)CCCCCCCCCCCCCCCCC FPVVYTCTZKCSOJ-UHFFFAOYSA-N 0.000 description 1
- IAYPIBMASNFSPL-UHFFFAOYSA-N Ethylene oxide Chemical compound C1CO1 IAYPIBMASNFSPL-UHFFFAOYSA-N 0.000 description 1
- BRRLKISXVZXEAB-UHFFFAOYSA-M FC(C(C(C(S(=O)(=O)[O-])(F)F)(F)F)(F)F)(F)F.C(CCC)OC=1C=C2C=CC=C(C2=CC1)[S+]1CCCC1 Chemical compound FC(C(C(C(S(=O)(=O)[O-])(F)F)(F)F)(F)F)(F)F.C(CCC)OC=1C=C2C=CC=C(C2=CC1)[S+]1CCCC1 BRRLKISXVZXEAB-UHFFFAOYSA-M 0.000 description 1
- 239000007818 Grignard reagent Substances 0.000 description 1
- 101000766096 Halorubrum sodomense Archaerhodopsin-3 Proteins 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- CSNNHWWHGAXBCP-UHFFFAOYSA-L Magnesium sulfate Chemical compound [Mg+2].[O-][S+2]([O-])([O-])[O-] CSNNHWWHGAXBCP-UHFFFAOYSA-L 0.000 description 1
- 229920000877 Melamine resin Polymers 0.000 description 1
- WRQNANDWMGAFTP-UHFFFAOYSA-N Methylacetoacetic acid Chemical compound COC(=O)CC(C)=O WRQNANDWMGAFTP-UHFFFAOYSA-N 0.000 description 1
- FXHOOIRPVKKKFG-UHFFFAOYSA-N N,N-Dimethylacetamide Chemical compound CN(C)C(C)=O FXHOOIRPVKKKFG-UHFFFAOYSA-N 0.000 description 1
- SUAKHGWARZSWIH-UHFFFAOYSA-N N,N‐diethylformamide Chemical compound CCN(CC)C=O SUAKHGWARZSWIH-UHFFFAOYSA-N 0.000 description 1
- NIPNSKYNPDTRPC-UHFFFAOYSA-N N-[2-oxo-2-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)ethyl]-2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidine-5-carboxamide Chemical compound O=C(CNC(=O)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F)N1CC2=C(CC1)NN=N2 NIPNSKYNPDTRPC-UHFFFAOYSA-N 0.000 description 1
- VCUFZILGIRCDQQ-KRWDZBQOSA-N N-[[(5S)-2-oxo-3-(2-oxo-3H-1,3-benzoxazol-6-yl)-1,3-oxazolidin-5-yl]methyl]-2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidine-5-carboxamide Chemical compound O=C1O[C@H](CN1C1=CC2=C(NC(O2)=O)C=C1)CNC(=O)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F VCUFZILGIRCDQQ-KRWDZBQOSA-N 0.000 description 1
- UEEJHVSXFDXPFK-UHFFFAOYSA-N N-dimethylaminoethanol Chemical compound CN(C)CCO UEEJHVSXFDXPFK-UHFFFAOYSA-N 0.000 description 1
- OHLUUHNLEMFGTQ-UHFFFAOYSA-N N-methylacetamide Chemical compound CNC(C)=O OHLUUHNLEMFGTQ-UHFFFAOYSA-N 0.000 description 1
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 1
- JKRZOJADNVOXPM-UHFFFAOYSA-N Oxalic acid dibutyl ester Chemical compound CCCCOC(=O)C(=O)OCCCC JKRZOJADNVOXPM-UHFFFAOYSA-N 0.000 description 1
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 1
- 229920003171 Poly (ethylene oxide) Polymers 0.000 description 1
- 239000004698 Polyethylene Substances 0.000 description 1
- 239000002202 Polyethylene glycol Substances 0.000 description 1
- 239000004793 Polystyrene Substances 0.000 description 1
- XBDQKXXYIPTUBI-UHFFFAOYSA-M Propionate Chemical compound CCC([O-])=O XBDQKXXYIPTUBI-UHFFFAOYSA-M 0.000 description 1
- GOOHAUXETOMSMM-UHFFFAOYSA-N Propylene oxide Chemical compound CC1CO1 GOOHAUXETOMSMM-UHFFFAOYSA-N 0.000 description 1
- XBDYBAVJXHJMNQ-UHFFFAOYSA-N Tetrahydroanthracene Natural products C1=CC=C2C=C(CCCC3)C3=CC2=C1 XBDYBAVJXHJMNQ-UHFFFAOYSA-N 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- GSEJCLTVZPLZKY-UHFFFAOYSA-N Triethanolamine Chemical compound OCCN(CCO)CCO GSEJCLTVZPLZKY-UHFFFAOYSA-N 0.000 description 1
- ZJCCRDAZUWHFQH-UHFFFAOYSA-N Trimethylolpropane Chemical compound CCC(CO)(CO)CO ZJCCRDAZUWHFQH-UHFFFAOYSA-N 0.000 description 1
- XSQUKJJJFZCRTK-UHFFFAOYSA-N Urea Chemical compound NC(N)=O XSQUKJJJFZCRTK-UHFFFAOYSA-N 0.000 description 1
- SQAMZFDWYRVIMG-UHFFFAOYSA-N [3,5-bis(hydroxymethyl)phenyl]methanol Chemical compound OCC1=CC(CO)=CC(CO)=C1 SQAMZFDWYRVIMG-UHFFFAOYSA-N 0.000 description 1
- JAWMENYCRQKKJY-UHFFFAOYSA-N [3-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-ylmethyl)-1-oxa-2,8-diazaspiro[4.5]dec-2-en-8-yl]-[2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidin-5-yl]methanone Chemical compound N1N=NC=2CN(CCC=21)CC1=NOC2(C1)CCN(CC2)C(=O)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F JAWMENYCRQKKJY-UHFFFAOYSA-N 0.000 description 1
- NVJPBZCLWGTJKD-UHFFFAOYSA-N [bis(4-tert-butylphenyl)-lambda3-iodanyl] trifluoromethanesulfonate Chemical compound CC(C)(C)c1ccc(cc1)[I](OS(=O)(=O)C(F)(F)F)c1ccc(cc1)C(C)(C)C NVJPBZCLWGTJKD-UHFFFAOYSA-N 0.000 description 1
- AFPRJLBZLPBTPZ-UHFFFAOYSA-N acenaphthoquinone Chemical compound C1=CC(C(C2=O)=O)=C3C2=CC=CC3=C1 AFPRJLBZLPBTPZ-UHFFFAOYSA-N 0.000 description 1
- KXKVLQRXCPHEJC-UHFFFAOYSA-N acetic acid trimethyl ester Natural products COC(C)=O KXKVLQRXCPHEJC-UHFFFAOYSA-N 0.000 description 1
- 125000002777 acetyl group Chemical group [H]C([H])([H])C(*)=O 0.000 description 1
- 150000001252 acrylic acid derivatives Chemical class 0.000 description 1
- 150000001298 alcohols Chemical class 0.000 description 1
- 150000001335 aliphatic alkanes Chemical class 0.000 description 1
- 239000004844 aliphatic epoxy resin Substances 0.000 description 1
- 150000001336 alkenes Chemical class 0.000 description 1
- 150000001345 alkine derivatives Chemical class 0.000 description 1
- 150000001350 alkyl halides Chemical class 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 235000015241 bacon Nutrition 0.000 description 1
- 229940007550 benzyl acetate Drugs 0.000 description 1
- 235000010290 biphenyl Nutrition 0.000 description 1
- 239000004305 biphenyl Substances 0.000 description 1
- 125000002529 biphenylenyl group Chemical group C1(=CC=CC=2C3=CC=CC=C3C12)* 0.000 description 1
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 description 1
- 239000001273 butane Substances 0.000 description 1
- IAQRGUVFOMOMEM-UHFFFAOYSA-N butene Natural products CC=CC IAQRGUVFOMOMEM-UHFFFAOYSA-N 0.000 description 1
- 125000004106 butoxy group Chemical group [*]OC([H])([H])C([H])([H])C(C([H])([H])[H])([H])[H] 0.000 description 1
- BNHZZINHLCTQKT-UHFFFAOYSA-N butyl acetate;2-(2-hydroxyethoxy)ethanol Chemical compound OCCOCCO.CCCCOC(C)=O BNHZZINHLCTQKT-UHFFFAOYSA-N 0.000 description 1
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- BTMVHUNTONAYDX-UHFFFAOYSA-N butyl propionate Chemical compound CCCCOC(=O)CC BTMVHUNTONAYDX-UHFFFAOYSA-N 0.000 description 1
- 239000004202 carbamide Substances 0.000 description 1
- OEYIOHPDSNJKLS-UHFFFAOYSA-N choline Chemical compound C[N+](C)(C)CCO OEYIOHPDSNJKLS-UHFFFAOYSA-N 0.000 description 1
- 229960001231 choline Drugs 0.000 description 1
- 229930003836 cresol Natural products 0.000 description 1
- 150000001924 cycloalkanes Chemical class 0.000 description 1
- 150000001925 cycloalkenes Chemical class 0.000 description 1
- HPXRVTGHNJAIIH-UHFFFAOYSA-N cyclohexanol Chemical compound OC1CCCCC1 HPXRVTGHNJAIIH-UHFFFAOYSA-N 0.000 description 1
- 229960002887 deanol Drugs 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 230000018044 dehydration Effects 0.000 description 1
- 238000006356 dehydrogenation reaction Methods 0.000 description 1
- WYACBZDAHNBPPB-UHFFFAOYSA-N diethyl oxalate Chemical compound CCOC(=O)C(=O)OCC WYACBZDAHNBPPB-UHFFFAOYSA-N 0.000 description 1
- HPNMFZURTQLUMO-UHFFFAOYSA-N diethylamine Chemical compound CCNCC HPNMFZURTQLUMO-UHFFFAOYSA-N 0.000 description 1
- 229940019778 diethylene glycol diethyl ether Drugs 0.000 description 1
- XXJWXESWEXIICW-UHFFFAOYSA-N diethylene glycol monoethyl ether Chemical compound CCOCCOCCO XXJWXESWEXIICW-UHFFFAOYSA-N 0.000 description 1
- 229940075557 diethylene glycol monoethyl ether Drugs 0.000 description 1
- FBSAITBEAPNWJG-UHFFFAOYSA-N dimethyl phthalate Natural products CC(=O)OC1=CC=CC=C1OC(C)=O FBSAITBEAPNWJG-UHFFFAOYSA-N 0.000 description 1
- 239000012972 dimethylethanolamine Substances 0.000 description 1
- 229960001826 dimethylphthalate Drugs 0.000 description 1
- OZLBDYMWFAHSOQ-UHFFFAOYSA-N diphenyliodanium Chemical compound C=1C=CC=CC=1[I+]C1=CC=CC=C1 OZLBDYMWFAHSOQ-UHFFFAOYSA-N 0.000 description 1
- ORPDKMPYOLFUBA-UHFFFAOYSA-M diphenyliodanium;1,1,2,2,3,3,4,4,4-nonafluorobutane-1-sulfonate Chemical compound C=1C=CC=CC=1[I+]C1=CC=CC=C1.[O-]S(=O)(=O)C(F)(F)C(F)(F)C(F)(F)C(F)(F)F ORPDKMPYOLFUBA-UHFFFAOYSA-M 0.000 description 1
- SBQIJPBUMNWUKN-UHFFFAOYSA-M diphenyliodanium;trifluoromethanesulfonate Chemical compound [O-]S(=O)(=O)C(F)(F)F.C=1C=CC=CC=1[I+]C1=CC=CC=C1 SBQIJPBUMNWUKN-UHFFFAOYSA-M 0.000 description 1
- WEHWNAOGRSTTBQ-UHFFFAOYSA-N dipropylamine Chemical compound CCCNCCC WEHWNAOGRSTTBQ-UHFFFAOYSA-N 0.000 description 1
- 239000012153 distilled water Substances 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- ODQWQRRAPPTVAG-GZTJUZNOSA-N doxepin Chemical compound C1OC2=CC=CC=C2C(=C/CCN(C)C)/C2=CC=CC=C21 ODQWQRRAPPTVAG-GZTJUZNOSA-N 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 239000012156 elution solvent Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- IFDFMWBBLAUYIW-UHFFFAOYSA-N ethane-1,2-diol;ethyl acetate Chemical compound OCCO.CCOC(C)=O IFDFMWBBLAUYIW-UHFFFAOYSA-N 0.000 description 1
- 125000001301 ethoxy group Chemical group [H]C([H])([H])C([H])([H])O* 0.000 description 1
- 125000005745 ethoxymethyl group Chemical group [H]C([H])([H])C([H])([H])OC([H])([H])* 0.000 description 1
- 229940116333 ethyl lactate Drugs 0.000 description 1
- 229940093476 ethylene glycol Drugs 0.000 description 1
- RMBPEFMHABBEKP-UHFFFAOYSA-N fluorene Chemical compound C1=CC=C2C3=C[CH]C=CC3=CC2=C1 RMBPEFMHABBEKP-UHFFFAOYSA-N 0.000 description 1
- HQXIXXHYKGSHCN-UHFFFAOYSA-N fluoro ethanesulfonate Chemical compound CCS(=O)(=O)OF HQXIXXHYKGSHCN-UHFFFAOYSA-N 0.000 description 1
- 125000002485 formyl group Chemical group [H]C(*)=O 0.000 description 1
- 125000000524 functional group Chemical group 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 229940100608 glycol distearate Drugs 0.000 description 1
- 150000004795 grignard reagents Chemical class 0.000 description 1
- 150000004820 halides Chemical class 0.000 description 1
- KDEZIUOWTXJEJK-UHFFFAOYSA-N heptacene Chemical compound C1=CC=CC2=CC3=CC4=CC5=CC6=CC7=CC=CC=C7C=C6C=C5C=C4C=C3C=C21 KDEZIUOWTXJEJK-UHFFFAOYSA-N 0.000 description 1
- DMEGYFMYUHOHGS-UHFFFAOYSA-N heptamethylene Natural products C1CCCCCC1 DMEGYFMYUHOHGS-UHFFFAOYSA-N 0.000 description 1
- XVEOUOTUJBYHNL-UHFFFAOYSA-N heptane-2,4-diol Chemical compound CCCC(O)CC(C)O XVEOUOTUJBYHNL-UHFFFAOYSA-N 0.000 description 1
- ACJRMEVDTSKFDP-UHFFFAOYSA-N heptaphene Chemical compound C1=CC=C2C=C(C=C3C4=CC5=CC6=CC=CC=C6C=C5C=C4C=CC3=C3)C3=CC2=C1 ACJRMEVDTSKFDP-UHFFFAOYSA-N 0.000 description 1
- QSQIGGCOCHABAP-UHFFFAOYSA-N hexacene Chemical compound C1=CC=CC2=CC3=CC4=CC5=CC6=CC=CC=C6C=C5C=C4C=C3C=C21 QSQIGGCOCHABAP-UHFFFAOYSA-N 0.000 description 1
- UOYPNWSDSPYOSN-UHFFFAOYSA-N hexahelicene Chemical compound C1=CC=CC2=C(C=3C(=CC=C4C=CC=5C(C=34)=CC=CC=5)C=C3)C3=CC=C21 UOYPNWSDSPYOSN-UHFFFAOYSA-N 0.000 description 1
- QNVRIHYSUZMSGM-UHFFFAOYSA-N hexan-2-ol Chemical compound CCCCC(C)O QNVRIHYSUZMSGM-UHFFFAOYSA-N 0.000 description 1
- ACCCMOQWYVYDOT-UHFFFAOYSA-N hexane-1,1-diol Chemical compound CCCCCC(O)O ACCCMOQWYVYDOT-UHFFFAOYSA-N 0.000 description 1
- XXMIOPMDWAUFGU-UHFFFAOYSA-N hexane-1,6-diol Chemical compound OCCCCCCO XXMIOPMDWAUFGU-UHFFFAOYSA-N 0.000 description 1
- OHMBHFSEKCCCBW-UHFFFAOYSA-N hexane-2,5-diol Chemical compound CC(O)CCC(C)O OHMBHFSEKCCCBW-UHFFFAOYSA-N 0.000 description 1
- PKIFBGYEEVFWTJ-UHFFFAOYSA-N hexaphene Chemical compound C1=CC=C2C=C3C4=CC5=CC6=CC=CC=C6C=C5C=C4C=CC3=CC2=C1 PKIFBGYEEVFWTJ-UHFFFAOYSA-N 0.000 description 1
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 description 1
- 150000002467 indacenes Chemical class 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- GJRQTCIYDGXPES-UHFFFAOYSA-N iso-butyl acetate Natural products CC(C)COC(C)=O GJRQTCIYDGXPES-UHFFFAOYSA-N 0.000 description 1
- PHTQWCKDNZKARW-UHFFFAOYSA-N isoamylol Chemical compound CC(C)CCO PHTQWCKDNZKARW-UHFFFAOYSA-N 0.000 description 1
- FGKJLKRYENPLQH-UHFFFAOYSA-M isocaproate Chemical compound CC(C)CCC([O-])=O FGKJLKRYENPLQH-UHFFFAOYSA-M 0.000 description 1
- ZFSLODLOARCGLH-UHFFFAOYSA-N isocyanuric acid Chemical compound OC1=NC(O)=NC(O)=N1 ZFSLODLOARCGLH-UHFFFAOYSA-N 0.000 description 1
- 229960004592 isopropanol Drugs 0.000 description 1
- JMMWKPVZQRWMSS-UHFFFAOYSA-N isopropanol acetate Natural products CC(C)OC(C)=O JMMWKPVZQRWMSS-UHFFFAOYSA-N 0.000 description 1
- 229940011051 isopropyl acetate Drugs 0.000 description 1
- GWYFCOCPABKNJV-UHFFFAOYSA-M isovalerate Chemical compound CC(C)CC([O-])=O GWYFCOCPABKNJV-UHFFFAOYSA-M 0.000 description 1
- OQAGVSWESNCJJT-UHFFFAOYSA-N isovaleric acid methyl ester Natural products COC(=O)CC(C)C OQAGVSWESNCJJT-UHFFFAOYSA-N 0.000 description 1
- 239000005453 ketone based solvent Substances 0.000 description 1
- 150000002576 ketones Chemical class 0.000 description 1
- 229920002521 macromolecule Polymers 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- DQEUYIQDSMINEY-UHFFFAOYSA-M magnesium;prop-1-ene;bromide Chemical compound [Mg+2].[Br-].[CH2-]C=C DQEUYIQDSMINEY-UHFFFAOYSA-M 0.000 description 1
- JDSHMPZPIAZGSV-UHFFFAOYSA-N melamine Chemical compound NC1=NC(N)=NC(N)=N1 JDSHMPZPIAZGSV-UHFFFAOYSA-N 0.000 description 1
- 125000000956 methoxy group Chemical group [H]C([H])([H])O* 0.000 description 1
- IMXBRVLCKXGWSS-UHFFFAOYSA-N methyl 2-cyclohexylacetate Chemical compound COC(=O)CC1CCCCC1 IMXBRVLCKXGWSS-UHFFFAOYSA-N 0.000 description 1
- 229940057867 methyl lactate Drugs 0.000 description 1
- 239000000178 monomer Substances 0.000 description 1
- HEPOEAALKWFVLE-UHFFFAOYSA-N n -((perfluorooctanesulfonyl)oxy)-5-norbornene-2,3-dicarboximide Chemical compound C1=CC2CC1C1C2C(=O)N(OS(=O)(=O)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)F)C1=O HEPOEAALKWFVLE-UHFFFAOYSA-N 0.000 description 1
- YCMDNBGUNDHOOD-UHFFFAOYSA-N n -((trifluoromethylsulfonyl)oxy)-5-norbornene-2,3-dicarboximide Chemical compound C1=CC2CC1C1C2C(=O)N(OS(=O)(=O)C(F)(F)F)C1=O YCMDNBGUNDHOOD-UHFFFAOYSA-N 0.000 description 1
- TVMXDCGIABBOFY-UHFFFAOYSA-N n-Octanol Natural products CCCCCCCC TVMXDCGIABBOFY-UHFFFAOYSA-N 0.000 description 1
- IJDNQMDRQITEOD-UHFFFAOYSA-N n-butane Chemical compound CCCC IJDNQMDRQITEOD-UHFFFAOYSA-N 0.000 description 1
- 229940017144 n-butyl lactate Drugs 0.000 description 1
- GNVRJGIVDSQCOP-UHFFFAOYSA-N n-ethyl-n-methylethanamine Chemical compound CCN(C)CC GNVRJGIVDSQCOP-UHFFFAOYSA-N 0.000 description 1
- QJQAMHYHNCADNR-UHFFFAOYSA-N n-methylpropanamide Chemical compound CCC(=O)NC QJQAMHYHNCADNR-UHFFFAOYSA-N 0.000 description 1
- OFBQJSOFQDEBGM-UHFFFAOYSA-N n-pentane Natural products CCCCC OFBQJSOFQDEBGM-UHFFFAOYSA-N 0.000 description 1
- SLCVBVWXLSEKPL-UHFFFAOYSA-N neopentyl glycol Chemical compound OCC(C)(C)CO SLCVBVWXLSEKPL-UHFFFAOYSA-N 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- MCPACASRTTWSHP-UHFFFAOYSA-N nitro 2-(2-bicyclo[2.2.1]heptanyl)-1,1,2,2-tetrafluoroethanesulfonate Chemical compound C12C(CC(CC1)C2)C(C(S(=O)(=O)O[N+](=O)[O-])(F)F)(F)F MCPACASRTTWSHP-UHFFFAOYSA-N 0.000 description 1
- 125000000449 nitro group Chemical group [O-][N+](*)=O 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 125000004433 nitrogen atom Chemical group N* 0.000 description 1
- QGLKJKCYBOYXKC-UHFFFAOYSA-N nonaoxidotritungsten Chemical compound O=[W]1(=O)O[W](=O)(=O)O[W](=O)(=O)O1 QGLKJKCYBOYXKC-UHFFFAOYSA-N 0.000 description 1
- 239000002736 nonionic surfactant Substances 0.000 description 1
- UMRZSTCPUPJPOJ-KNVOCYPGSA-N norbornane Chemical compound C1C[C@H]2CC[C@@H]1C2 UMRZSTCPUPJPOJ-KNVOCYPGSA-N 0.000 description 1
- 229920003986 novolac Polymers 0.000 description 1
- NIHNNTQXNPWCJQ-UHFFFAOYSA-N o-biphenylenemethane Natural products C1=CC=C2CC3=CC=CC=C3C2=C1 NIHNNTQXNPWCJQ-UHFFFAOYSA-N 0.000 description 1
- SJWFXCIHNDVPSH-UHFFFAOYSA-N octan-2-ol Chemical compound CCCCCCC(C)O SJWFXCIHNDVPSH-UHFFFAOYSA-N 0.000 description 1
- 239000004533 oil dispersion Substances 0.000 description 1
- LSQODMMMSXHVCN-UHFFFAOYSA-N ovalene Chemical compound C1=C(C2=C34)C=CC3=CC=C(C=C3C5=C6C(C=C3)=CC=C3C6=C6C(C=C3)=C3)C4=C5C6=C2C3=C1 LSQODMMMSXHVCN-UHFFFAOYSA-N 0.000 description 1
- PFPYHYZFFJJQFD-UHFFFAOYSA-N oxalic anhydride Chemical compound O=C1OC1=O PFPYHYZFFJJQFD-UHFFFAOYSA-N 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- SLIUAWYAILUBJU-UHFFFAOYSA-N pentacene Chemical compound C1=CC=CC2=CC3=CC4=CC5=CC=CC=C5C=C4C=C3C=C21 SLIUAWYAILUBJU-UHFFFAOYSA-N 0.000 description 1
- GUVXZFRDPCKWEM-UHFFFAOYSA-N pentalene Chemical compound C1=CC2=CC=CC2=C1 GUVXZFRDPCKWEM-UHFFFAOYSA-N 0.000 description 1
- JYVLIDXNZAXMDK-UHFFFAOYSA-N pentan-2-ol Chemical compound CCCC(C)O JYVLIDXNZAXMDK-UHFFFAOYSA-N 0.000 description 1
- GTCCGKPBSJZVRZ-UHFFFAOYSA-N pentane-2,4-diol Chemical compound CC(O)CC(C)O GTCCGKPBSJZVRZ-UHFFFAOYSA-N 0.000 description 1
- 125000004115 pentoxy group Chemical group [*]OC([H])([H])C([H])([H])C([H])([H])C(C([H])([H])[H])([H])[H] 0.000 description 1
- GXOHBWLPQHTYPF-UHFFFAOYSA-N pentyl 2-hydroxypropanoate Chemical compound CCCCCOC(=O)C(C)O GXOHBWLPQHTYPF-UHFFFAOYSA-N 0.000 description 1
- YVBBRRALBYAZBM-UHFFFAOYSA-N perfluorooctane Chemical compound FC(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)F YVBBRRALBYAZBM-UHFFFAOYSA-N 0.000 description 1
- 125000002080 perylenyl group Chemical group C1(=CC=C2C=CC=C3C4=CC=CC5=CC=CC(C1=C23)=C45)* 0.000 description 1
- CSHWQDPOILHKBI-UHFFFAOYSA-N peryrene Natural products C1=CC(C2=CC=CC=3C2=C2C=CC=3)=C3C2=CC=CC3=C1 CSHWQDPOILHKBI-UHFFFAOYSA-N 0.000 description 1
- XDJOIMJURHQYDW-UHFFFAOYSA-N phenalene Chemical compound C1=CC(CC=C2)=C3C2=CC=CC3=C1 XDJOIMJURHQYDW-UHFFFAOYSA-N 0.000 description 1
- 229960005323 phenoxyethanol Drugs 0.000 description 1
- WVDDGKGOMKODPV-ZQBYOMGUSA-N phenyl(114C)methanol Chemical compound O[14CH2]C1=CC=CC=C1 WVDDGKGOMKODPV-ZQBYOMGUSA-N 0.000 description 1
- 125000004437 phosphorous atom Chemical group 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 239000003504 photosensitizing agent Substances 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 229920001223 polyethylene glycol Polymers 0.000 description 1
- 229920000259 polyoxyethylene lauryl ether Polymers 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- 239000001294 propane Substances 0.000 description 1
- CVCYODHOXFGRCE-UHFFFAOYSA-N propane-1,2-diol;propyl acetate Chemical compound CC(O)CO.CCCOC(C)=O CVCYODHOXFGRCE-UHFFFAOYSA-N 0.000 description 1
- 125000002572 propoxy group Chemical group [*]OC([H])([H])C(C([H])([H])[H])([H])[H] 0.000 description 1
- MWWATHDPGQKSAR-UHFFFAOYSA-N propyne Chemical compound CC#C MWWATHDPGQKSAR-UHFFFAOYSA-N 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- LNKHTYQPVMAJSF-UHFFFAOYSA-N pyranthrene Chemical compound C1=C2C3=CC=CC=C3C=C(C=C3)C2=C2C3=CC3=C(C=CC=C4)C4=CC4=CC=C1C2=C34 LNKHTYQPVMAJSF-UHFFFAOYSA-N 0.000 description 1
- HNJBEVLQSNELDL-UHFFFAOYSA-N pyrrolidin-2-one Chemical compound O=C1CCCN1 HNJBEVLQSNELDL-UHFFFAOYSA-N 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- FMKFBRKHHLWKDB-UHFFFAOYSA-N rubicene Chemical compound C12=CC=CC=C2C2=CC=CC3=C2C1=C1C=CC=C2C4=CC=CC=C4C3=C21 FMKFBRKHHLWKDB-UHFFFAOYSA-N 0.000 description 1
- DCKVNWZUADLDEH-UHFFFAOYSA-N sec-butyl acetate Chemical compound CCC(C)OC(C)=O DCKVNWZUADLDEH-UHFFFAOYSA-N 0.000 description 1
- 238000009751 slip forming Methods 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 229910000029 sodium carbonate Inorganic materials 0.000 description 1
- 235000019795 sodium metasilicate Nutrition 0.000 description 1
- 150000005846 sugar alcohols Polymers 0.000 description 1
- BDHFUVZGWQCTTF-UHFFFAOYSA-M sulfonate Chemical compound [O-]S(=O)=O BDHFUVZGWQCTTF-UHFFFAOYSA-M 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 125000004434 sulfur atom Chemical group 0.000 description 1
- 239000013589 supplement Substances 0.000 description 1
- IFLREYGFSNHWGE-UHFFFAOYSA-N tetracene Chemical compound C1=CC=CC2=CC3=CC4=CC=CC=C4C=C3C=C21 IFLREYGFSNHWGE-UHFFFAOYSA-N 0.000 description 1
- BRGJIIMZXMWMCC-UHFFFAOYSA-N tetradecan-2-ol Chemical compound CCCCCCCCCCCCC(C)O BRGJIIMZXMWMCC-UHFFFAOYSA-N 0.000 description 1
- 229940073455 tetraethylammonium hydroxide Drugs 0.000 description 1
- LRGJRHZIDJQFCL-UHFFFAOYSA-M tetraethylazanium;hydroxide Chemical compound [OH-].CC[N+](CC)(CC)CC LRGJRHZIDJQFCL-UHFFFAOYSA-M 0.000 description 1
- 125000000383 tetramethylene group Chemical group [H]C([H])([*:1])C([H])([H])C([H])([H])C([H])([H])[*:2] 0.000 description 1
- KTQYWNARBMKMCX-UHFFFAOYSA-N tetraphenylene Chemical group C1=CC=C2C3=CC=CC=C3C3=CC=CC=C3C3=CC=CC=C3C2=C1 KTQYWNARBMKMCX-UHFFFAOYSA-N 0.000 description 1
- 125000003396 thiol group Chemical group [H]S* 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- ULIAPOFMBCCSPE-UHFFFAOYSA-N tridecan-7-one Chemical compound CCCCCCC(=O)CCCCCC ULIAPOFMBCCSPE-UHFFFAOYSA-N 0.000 description 1
- TVBIVRGNYNBFCD-UHFFFAOYSA-N triethylazanium;trifluoromethanesulfonate Chemical compound CC[NH+](CC)CC.[O-]S(=O)(=O)C(F)(F)F TVBIVRGNYNBFCD-UHFFFAOYSA-N 0.000 description 1
- ITMCEJHCFYSIIV-UHFFFAOYSA-N triflic acid Chemical compound OS(=O)(=O)C(F)(F)F ITMCEJHCFYSIIV-UHFFFAOYSA-N 0.000 description 1
- WLOQLWBIJZDHET-UHFFFAOYSA-N triphenylsulfonium Chemical compound C1=CC=CC=C1[S+](C=1C=CC=CC=1)C1=CC=CC=C1 WLOQLWBIJZDHET-UHFFFAOYSA-N 0.000 description 1
- 239000012953 triphenylsulfonium Substances 0.000 description 1
- FAYMLNNRGCYLSR-UHFFFAOYSA-M triphenylsulfonium triflate Chemical compound [O-]S(=O)(=O)C(F)(F)F.C1=CC=CC=C1[S+](C=1C=CC=CC=1)C1=CC=CC=C1 FAYMLNNRGCYLSR-UHFFFAOYSA-M 0.000 description 1
- 229910001930 tungsten oxide Inorganic materials 0.000 description 1
- XMUJIPOFTAHSOK-UHFFFAOYSA-N undecan-2-ol Chemical compound CCCCCCCCCC(C)O XMUJIPOFTAHSOK-UHFFFAOYSA-N 0.000 description 1
- 230000008016 vaporization Effects 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
- 239000008096 xylene Substances 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C33/00—Unsaturated compounds having hydroxy or O-metal groups bound to acyclic carbon atoms
- C07C33/28—Alcohols containing only six-membered aromatic rings as cyclic part with unsaturation outside the aromatic rings
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C35/00—Compounds having at least one hydroxy or O-metal group bound to a carbon atom of a ring other than a six-membered aromatic ring
- C07C35/22—Compounds having at least one hydroxy or O-metal group bound to a carbon atom of a ring other than a six-membered aromatic ring polycyclic, at least one hydroxy group bound to a condensed ring system
- C07C35/37—Compounds having at least one hydroxy or O-metal group bound to a carbon atom of a ring other than a six-membered aromatic ring polycyclic, at least one hydroxy group bound to a condensed ring system with a hydroxy group on a condensed system having three rings
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C35/00—Compounds having at least one hydroxy or O-metal group bound to a carbon atom of a ring other than a six-membered aromatic ring
- C07C35/22—Compounds having at least one hydroxy or O-metal group bound to a carbon atom of a ring other than a six-membered aromatic ring polycyclic, at least one hydroxy group bound to a condensed ring system
- C07C35/44—Compounds having at least one hydroxy or O-metal group bound to a carbon atom of a ring other than a six-membered aromatic ring polycyclic, at least one hydroxy group bound to a condensed ring system with a hydroxy group on a condensed ring system having more than three rings
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C43/00—Ethers; Compounds having groups, groups or groups
- C07C43/02—Ethers
- C07C43/03—Ethers having all ether-oxygen atoms bound to acyclic carbon atoms
- C07C43/14—Unsaturated ethers
- C07C43/164—Unsaturated ethers containing six-membered aromatic rings
- C07C43/166—Unsaturated ethers containing six-membered aromatic rings having unsaturation outside the aromatic rings
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F299/00—Macromolecular compounds obtained by interreacting polymers involving only carbon-to-carbon unsaturated bond reactions, in the absence of non-macromolecular monomers
- C08F299/02—Macromolecular compounds obtained by interreacting polymers involving only carbon-to-carbon unsaturated bond reactions, in the absence of non-macromolecular monomers from unsaturated polycondensates
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/094—Multilayer resist systems, e.g. planarising layers
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/16—Coating processes; Apparatus therefor
- G03F7/162—Coating on a rotating support, e.g. using a whirler or a spinner
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/16—Coating processes; Apparatus therefor
- G03F7/168—Finishing the coated layer, e.g. drying, baking, soaking
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
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- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
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- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
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- C07C2603/04—Ortho- or ortho- and peri-condensed systems containing three rings
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- C08G2261/10—Definition of the polymer structure
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- C08G2261/10—Definition of the polymer structure
- C08G2261/14—Side-groups
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- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
Definitions
- the present invention relates to a resist underlayer film forming composition, a resist underlayer film and a method for forming the resist underlayer film, a method for producing a patterned substrate, and a compound.
- a multilayer resist process is used to obtain a high degree of integration.
- a film-forming composition is applied to one side of a substrate, and then the resulting film is heated to form a resist underlayer film, and this resist underlayer film is opposite to the substrate.
- a resist pattern is formed on the side using a resist composition or the like.
- the resist underlayer film is etched using the resist pattern as a mask, and the substrate is further etched using the obtained resist underlayer film pattern as a mask, thereby forming a desired pattern on the substrate and obtaining a patterned substrate. it can.
- the resist underlayer film used in such a multilayer resist process is required to have excellent coating properties and excellent etching resistance.
- the resist underlayer film forming composition used for forming the resist underlayer film is required to sufficiently fill these trenches and to have high flatness.
- a method of forming a hard mask as an intermediate layer on the resist underlayer film has been studied.
- an inorganic hard mask is formed on the resist underlayer film by a CVD method.
- the temperature is at least 300 ° C., usually 400 ° C. or higher.
- the resist underlayer film needs high heat resistance. If the heat resistance is insufficient, the components of the resist underlayer film sublimate, and this sublimated component reattaches to the substrate, resulting in a decrease in semiconductor device manufacturing yield.
- the present invention has been made based on the above circumstances, and its purpose is to provide a resist underlayer film that can form a resist underlayer film having excellent etching resistance, flatness, and heat resistance while exhibiting excellent coating properties.
- the object is to provide a film forming composition, a resist underlayer film, a method for forming a resist underlayer film, a method for producing a patterned substrate, and a compound.
- the invention made to solve the above problems includes a compound having a group represented by the following formula (1) (hereinafter also referred to as “[A] compound”) and a solvent (hereinafter referred to as “[B] solvent”).
- a composition for forming a resist underlayer film (In the formula (1), R 1 is an (m + n) -valent organic group having 2 to 10 carbon atoms, which has two carbon atoms adjacent to each other, and one of the two carbon atoms has a hydroxy group.
- a hydrogen atom is bonded to the other group, an alkoxy group
- L 1 is an ethynediyl group or a substituted or unsubstituted ethenediyl group
- R 2 is a hydrogen atom or a monovalent organic group having 1 to 20 carbon atoms
- N is an integer of 1 to 3.
- n is 2 or more
- a plurality of L 1 may be the same or different
- a plurality of R 2 may be the same or different.
- Another invention made to solve the above problems is a resist underlayer film formed from the resist underlayer film.
- Still another invention made in order to solve the above problems is to heat the coating film obtained by the step of coating the resist underlayer film forming composition on one surface side of the substrate and the coating step.
- Still another invention made in order to solve the above-described problems includes a step of forming a resist pattern on the side of the resist underlayer film obtained by the resist underlayer film forming method opposite to the substrate, and the resist pattern And a step of performing etching using the mask as a mask.
- Still another invention made to solve the above problems is a compound having a group represented by the above formula (1).
- the composition for forming a resist underlayer film of the present invention can form a resist underlayer film having excellent etching resistance, flatness and heat resistance while exhibiting excellent coating properties.
- the resist underlayer film of the present invention is excellent in etching resistance, flatness and heat resistance.
- a resist underlayer film excellent in etching resistance, flatness and heat resistance can be formed while exhibiting excellent coating properties.
- a substrate having a good pattern shape can be obtained by using the excellent resist underlayer film formed as described above.
- the compound of the present invention can be suitably used as a component of the resist underlayer film forming composition. Therefore, these can be suitably used for manufacturing semiconductor devices and the like that are expected to be further miniaturized in the future.
- the composition for forming a resist underlayer film contains a [A] compound and a [B] solvent.
- the resist underlayer film forming composition includes an acid generator (hereinafter also referred to as “[C] acid generator”) and / or a cross-linking agent (hereinafter also referred to as “[D] cross-linking agent”) as suitable components. It may contain, and in the range which does not impair the effect of this invention, you may contain other arbitrary components. Each component will be described below.
- the compound [A] is a compound having a group represented by the following formula (1) (hereinafter also referred to as “group (I)”).
- group (I) The compound may have one group (I) or two or more groups.
- a compound can use 1 type (s) or 2 or more types.
- R 1 is an (m + n) -valent organic group having 2 to 10 carbon atoms, has two carbon atoms adjacent to each other, and one of the two carbon atoms is hydroxy.
- a group or an alkoxy group has a hydrogen atom bonded to the other.
- L 1 is an ethynediyl group or a substituted or unsubstituted ethenediyl group.
- R 2 is a hydrogen atom or a monovalent organic group having 1 to 20 carbon atoms.
- n is an integer of 1 to 3. When n is 2 or more, the plurality of L 1 may be the same or different, and the plurality of R 2 may be the same or different.
- * Indicates a binding site with a moiety other than the group represented by the formula (1) in the compound.
- m is an integer of 1 to 3.
- the resist underlayer film forming composition forms a resist underlayer film having excellent etching resistance, flatness, and heat resistance while exhibiting excellent coating properties because the compound [A] has the group (I). be able to.
- the reason why the composition for forming a resist underlayer film has the above-described configuration provides the above effect is not necessarily clear, it can be inferred as follows, for example. That is, since the resist underlayer film forming composition has a hydroxy group or an alkoxy group in R 1 of the group (I) of the [A] compound, it exhibits excellent coatability and flatness. Can be improved.
- R 1 has a structure in which a hydroxy group or an alkoxy group and a hydrogen atom are bonded to two carbon atoms adjacent to each other, this hydroxy group or alkoxy group is eliminated by heating.
- Etching resistance is improved because carbon-carbon double bonds are generated by dehydration or dealcoholization reaction (hereinafter also referred to as “dehydration reaction”), the oxygen atom content decreases, and the carbon atom content increases. I think that. Further, the generated carbon-carbon double bond and the carbon-carbon multiple bond of the ethynediyl group or ethanediyl group of L 1 can form a high-density crosslinked structure by heating, resulting in etching resistance and heat resistance. Is thought to improve.
- Examples of the (m + n) -valent organic group having 2 to 10 carbon atoms represented by R 1 include an (m + n) -valent hydrocarbon group having 2 to 10 carbon atoms adjacent to each other, A group ( ⁇ ) containing a divalent heteroatom-containing group between carbon-carbon of the hydrogen group, and part of the hydrogen atoms of the hydrocarbon group and group ( ⁇ ) were substituted with a monovalent heteroatom-containing group
- a group ( ⁇ ) containing a divalent heteroatom-containing group between carbon-carbon of the hydrogen group, and part of the hydrogen atoms of the hydrocarbon group and group ( ⁇ ) were substituted with a monovalent heteroatom-containing group
- a group in which one of hydrogen atoms bonded to the two carbon atoms of the hydrocarbon group, group ( ⁇ ) and group ( ⁇ ) is substituted with a hydroxy group or an alkoxy group, etc. Can be mentioned.
- alkoxy group examples include a methoxy group, an ethoxy group, a propoxy group, a butoxy group, and a pentyloxy group.
- Examples of the (m + n) -valent hydrocarbon group having 2 to 10 carbon atoms include alkanes such as ethane, propane and butane; Alkenes such as ethene, propene, butene; Chain hydrocarbons having 1 to 10 carbon atoms such as alkynes such as ethyne, propyne and butyne, Cycloalkanes such as cyclopentane and cyclohexane; Alicyclic saturated hydrocarbons such as bridged ring saturated hydrocarbons such as norbornane, adamantane, tricyclodecane; Cycloalkenes such as cyclopentene and cyclohexene; Alicyclic hydrocarbons having 3 to 10 carbon atoms such as alicyclic unsaturated hydrocarbons such as bridged ring unsaturated hydrocarbons such as norbornene and tricyclodecene; And a group obtained by removing (m + n) hydrogen atoms from a
- hetero atom constituting the monovalent and divalent heteroatom-containing group examples include an oxygen atom, a nitrogen atom, a sulfur atom, a phosphorus atom, a silicon atom, and a halogen atom.
- halogen atom examples include a fluorine atom, a chlorine atom, a bromine atom, and an iodine atom.
- Examples of the divalent heteroatom-containing group include —O—, —CO—, —S—, —CS—, —NR′—, a group in which two or more of these are combined, and the like.
- R ' is a hydrogen atom or a monovalent hydrocarbon group.
- Examples of the monovalent heteroatom-containing group include halogen atoms such as fluorine atom, chlorine atom, bromine atom and iodine atom, carboxy group, cyano group, amino group and sulfanyl group.
- R 1 preferably includes a structure represented by the following formula (A) (hereinafter also referred to as “structure (A)”) when m + n in the above formula (1) is 4 or less.
- structure (A) two adjacent carbon atoms having a hydroxy group or an alkoxy group bonded to one side and a hydrogen atom bonded to the other are adjacent to the ethynediyl group or ethenediyl group of L 1 .
- R X is a hydrogen atom or an alkyl group having 1 to 8 carbon atoms.
- N of * 1 to * 4 represent a binding site with L 1 in the above formula (1), and m represents a binding site with a moiety other than the group (I) in the [A] compound.
- m + n is 2 or 3
- a hydrogen atom or a monovalent organic group is bonded to (4-mn) of * 1 to * 4 .
- an organic group is bonded to * 1 and * 2 in the structure (A). That is, it is preferable that a hydrogen atom is not bonded to a carbon atom to which a hydroxy group and an alkoxy group in the organic group of R 1 are bonded.
- a hydrocarbon group is preferable and an aromatic hydrocarbon group is more preferable.
- an aromatic ring is preferably bonded to at least one of * 1 and * 2 . Examples of the aromatic ring include a benzene ring, a naphthalene ring, an anthracene ring, and a pyrene ring. With such a structure, etching resistance and heat resistance can be further improved.
- R X is preferably a hydrogen atom, a methyl group or an ethyl group, more preferably a hydrogen atom or a methyl group, and even more preferably a hydrogen atom.
- Examples of the substituent of the ethenediyl group represented by L 1 include a monovalent organic group having 1 to 10 carbon atoms, a hydrocarbon group is preferable, and an alkyl group is more preferable.
- L 1 is preferably an ethynediyl group or an unsubstituted ethenediyl group.
- Examples of the monovalent organic group having 1 to 20 carbon atoms represented by R 2 include a monovalent hydrocarbon group having 1 to 20 carbon atoms, and a divalent heteroatom containing carbon-carbon of the hydrocarbon group. And a group containing a group ( ⁇ ), a group obtained by substituting part or all of the hydrogen atoms of the hydrocarbon group and the group ( ⁇ ) with a monovalent heteroatom-containing group, and the like.
- R 2 is preferably a hydrogen atom and a hydrocarbon group, more preferably a hydrogen atom and an alkyl group, still more preferably a hydrogen atom and a methyl group, and particularly preferably a hydrogen atom from the viewpoint of improving etching resistance and heat resistance.
- N is preferably 1 or 2, and more preferably 1.
- M is preferably 1 or 2, and more preferably 2.
- the group (I) is preferably a group represented by the following formula (1-1) or (1-2) (hereinafter also referred to as “group (I-1) or (I-2)”).
- group (I-1) and (I-2) R 1 in the group (I) has 2 carbon atoms, n is 1, and m is 2 or 3.
- R 3 each independently represents a hydrogen atom or an alkyl group having 1 to 8 carbon atoms.
- L 1 , R 2 and * are as defined in the above formula (1).
- R 3 is preferably a hydrogen atom, a methyl group or an ethyl group, more preferably a hydrogen atom or a methyl group, and even more preferably a hydrogen atom.
- Examples of the structure of the moiety to which the group (I) in the [A] compound is bonded include an organic group having 1 to 50 carbon atoms.
- the group (I) in the compound is formed by reacting, for example, a compound having a carbonyl group with a Grignard reagent containing a carbon-carbon double bond such as magnesium allyl chloride in a solvent such as tetrahydrofuran.
- the hydroxy group of the product can be formed by reacting an alkyl halide such as methyl iodide with an alkyl group by reacting in a solvent such as tetrahydrofuran in the presence of a base such as sodium hydride.
- the group (I) is, for example, a compound having a carbonyl group, a halide containing a carbon-carbon triple bond such as propargyl bromide, a solvent such as cyclohexane in the presence of a base such as n-butyllithium / tetramethylethylenediamine. It can be formed by reacting in. Thus, the compound [A] can be easily synthesized from the ketone compound.
- the lower limit of the oxygen atom content of the [A] compound is preferably 3% by mass, more preferably 4% by mass, further preferably 5% by mass, and particularly preferably 6% by mass.
- As an upper limit of said oxygen atom content 15 mass% is preferable, 12 mass% is more preferable, 10 mass% is further more preferable, 9 mass% is especially preferable.
- the resist underlayer film forming composition can further improve etching resistance, flatness, and heat resistance by setting the oxygen atom content of the [A] compound in the above range.
- the “oxygen atom content” of the compound [A] can be calculated from the structure of the compound [A] obtained.
- the compound preferably has an aromatic ring.
- the resist underlayer film forming composition can further improve etching resistance and heat resistance.
- the aromatic ring include a benzene ring, a naphthalene ring, an anthracene ring, and a pyrene ring.
- the aromatic ring in the compound is bonded to at least one of the two binding sites in the above formula (1-1) or at least one of the three binding sites in the above formula (1-2). preferable.
- Examples of the compound [A] include an aromatic ring-containing compound having a molecular weight of 300 to 3,000 (hereinafter also referred to as “aromatic ring-containing compound (I)”), a resin (hereinafter also referred to as “resin (I)”). Etc. “Resin” means a polymer. “Aromatic ring-containing compound” refers to a compound having an aromatic ring that is not a polymer. Hereinafter, the aromatic ring-containing compound (I) and the resin (I) will be described in this order.
- the aromatic ring-containing compound (I) is a compound having a group (I) and an aromatic ring and having a molecular weight of 300 or more and 3,000 or less.
- the molecular weight of the aromatic ring-containing compound (I) is, for example, a polystyrene-converted weight average molecular weight (Mw) by gel permeation chromatography (GPC).
- Examples of the aromatic ring-containing compound (I) include compounds represented by the following formula (i).
- Z is a group (I) in which m is 2.
- Ar 1 is a group obtained by removing k hydrogen atoms on the aromatic ring of a substituted or unsubstituted aromatic hydrocarbon having 6 to 50 carbon atoms.
- Ar 2 is a substituted or unsubstituted aryl group having 6 to 50 carbon atoms.
- k is an integer of 1 to 10.
- the plurality of Z may be the same or different, and the plurality of Ar 2 may be the same or different.
- Ar 1 and one or more Ar 2 may be bonded to each other.
- Examples of the aromatic hydrocarbon having 6 to 50 carbon atoms giving the group represented by Ar 1 include benzene, naphthalene, anthracene, phenanthrene, pyrene, tetracene, chrysene, pentacene, hexacene, coronene, trinaphthylene, heptacene, ovalene and pentalene.
- Indene azulene, peptalene, biphenylene, indacene, acenaphthylene, fluorene, phenalene, acanthrylene, perylene, picene, tetraphenylene, hexaphene, rubicene, trinaphthylene, heptaphene, pyranthrene, hexahelicene and the like.
- benzene, pyrene and coronene are preferred.
- Examples of the aryl group represented by Ar 2 include groups obtained by removing one hydrogen atom on the aromatic ring from those exemplified as the aromatic hydrocarbon that gives Ar 1 .
- a phenyl group, a naphthyl group, and a pyrenyl group are preferable.
- the substituent of the aromatic hydrocarbon group examples include a hydroxy group, a halogen atom, an alkoxy group, a nitro group, a cyano group, and a carboxy group. From the viewpoints of etching resistance and heat resistance, the aromatic hydrocarbon group preferably has no substituent.
- the substituent of the aromatic hydrocarbon group may be the above group (I).
- the lower limit of k is preferably 2, and more preferably 3.
- the upper limit of k is preferably 6, and more preferably 4.
- molecular weight of aromatic ring content compound (I) 350 is preferred and 400 is more preferred.
- the upper limit of the molecular weight is preferably 2,000, more preferably 1,000, and still more preferably 800.
- Resin (I) is a resin having a group (I).
- the resin (I) include a resin having an aromatic ring in the main chain, a resin having no aromatic ring in the main chain and an aromatic ring in the side chain.
- the “main chain” refers to the longest chain composed of atoms in the [A] compound.
- the “side chain” means a chain other than the longest chain composed of atoms in the [A] compound.
- the resin (I) is usually a compound having a plurality of groups (I).
- Resin (I) can be synthesized by the method described in Paragraph 0041 using, as a raw material, a resin having an aromatic ring to which a group containing a carbonyl group such as a formyl group is bonded.
- Mw of resin (I) 500 is preferred and 1,000 is more preferred. Further, the upper limit of the Mw is preferably 50,000, more preferably 10,000, and further preferably 8,000.
- the lower limit of Mw / Mn of the resin (I) is usually 1 and preferably 1.1.
- the upper limit of the Mw / Mn is preferably 5, more preferably 3, and even more preferably 2.
- the flatness and surface coatability of the resist underlayer film forming composition can be further improved.
- Examples of the compound [A] include compounds represented by the following formulas (i-1) to (i-4) as the aromatic-containing compound (I), and compounds represented by the following formula (p-1) as the resin (I). Or a resin having a structural unit represented by (p-2). —Ar 1 ′ —Z 1 —Ar 1 ′ — in the following formula (i-4) represents 2 on the aromatic ring of the substituted aromatic hydrocarbon having 6 to 50 carbon atoms of Ar 1 in the above formula (i). Corresponds to a group without one hydrogen atom.
- Z 1 is each independently m is 2, and R 1 is represented by the above formula (1-1).
- R 1 is represented by the above formula (1-1).
- Z 2 is a group (I) when m is 1 and R 1 is the above formula (1-1).
- Ar 1A is a group obtained by removing six hydrogen atoms on the aromatic ring of a substituted or unsubstituted aromatic hydrocarbon having 6 to 50 carbon atoms.
- Ar 2A is independently a group obtained by removing two hydrogen atoms on the aromatic ring of a substituted or unsubstituted aromatic hydrocarbon having 6 to 50 carbon atoms.
- Ar 1A is preferably a benzenehexayl group.
- Ar 2A is preferably a benzenediyl group.
- Ar 1B is a group obtained by removing three hydrogen atoms on the aromatic ring of a substituted or unsubstituted aromatic hydrocarbon having 6 to 50 carbon atoms.
- Ar 2B each independently represents a substituted or unsubstituted aryl group having 6 to 50 carbon atoms.
- Ar 1B is preferably a benzenetriyl group.
- Ar 2B is preferably a naphthyl group.
- Ar 1C is a group obtained by removing two hydrogen atoms on the aromatic ring of a substituted or unsubstituted aromatic hydrocarbon having 6 to 50 carbon atoms.
- Ar 2C each independently represents a substituted or unsubstituted aryl group having 6 to 50 carbon atoms.
- Ar 1C is preferably a benzenediyl group or a coronenediyl group.
- Ar 2C is preferably a phenyl group, a naphthyl group, or a pyrenyl group.
- Ar 1 ′ is independently a group obtained by removing two hydrogen atoms on the aromatic ring of a substituted or unsubstituted aromatic hydrocarbon having 6 to 20 carbon atoms.
- Ar 2D each independently represents a substituted or unsubstituted aryl group having 6 to 50 carbon atoms.
- Ar 1 ′ is preferably a pyrenediyl group.
- Ar 2D is preferably a phenyl group.
- Ar a has a structure in which four hydrogen atoms of a substituted or unsubstituted aromatic hydrocarbon having 6 to 50 carbon atoms are removed.
- Ar a is preferably a structure in which four hydrogen atoms are removed from acenaphthen-yl-biphenyl.
- Ar b has a structure in which three hydrogen atoms of a substituted or unsubstituted aromatic hydrocarbon having 6 to 50 carbon atoms are removed.
- Ar b is preferably a structure obtained by removing three hydrogen atoms from acenaphthene.
- the lower limit of the content of the [A] compound is preferably 70% by mass, more preferably 80% by mass, and still more preferably 85% by mass with respect to the total solid content of the resist underlayer film forming composition.
- the upper limit of the content is, for example, 100% by mass.
- Total solid content refers to the sum of components other than the solvent [B] in the resist underlayer film forming composition.
- the lower limit of the content of the [A] compound in the resist underlayer film forming composition is preferably 1% by mass, more preferably 3% by mass, and even more preferably 5% by mass.
- 50 mass% is preferable, 30 mass% is more preferable, and 15 mass% is further more preferable.
- a solvent will not be specifically limited if the [A] polymer and the arbitrary component contained as needed can be melt
- solvents examples include alcohol solvents, ketone solvents, ether solvents, ester solvents, nitrogen-containing solvents, and the like.
- a solvent can be used individually by 1 type or in combination of 2 or more types.
- alcohol solvents include methanol, ethanol, n-propanol, iso-propanol, n-butanol, iso-butanol, sec-butanol, tert-butanol, n-pentanol, iso-pentanol, 2-methylbutanol, sec-pentanol, tert-pentanol, 3-methoxybutanol, n-hexanol, 2-methylpentanol, sec-hexanol, 2-ethylbutanol, sec-heptanol, 3-heptanol, n-octanol, 2-ethylhexanol , Sec-octanol, n-nonyl alcohol, 2,6-dimethylheptanol-4, n-decanol, sec-undecyl alcohol, trimethylnonyl alcohol, sec-tetradecyl alcohol, sec Monoalco
- ketone solvent examples include acetone, methyl ethyl ketone, methyl-n-propyl ketone, methyl-n-butyl ketone, diethyl ketone, methyl-iso-butyl ketone, methyl-n-pentyl ketone, ethyl-n-butyl ketone, methyl-n- Examples include hexyl ketone, di-iso-butyl ketone, trimethylnonanone, cyclohexanone, methylcyclohexanone, 2,4-pentanedione, acetonylacetone, diacetone alcohol, acetophenone, and fencheon.
- ether solvents include ethyl ether, iso-propyl ether, n-butyl ether, n-hexyl ether, 2-ethylhexyl ether, ethylene oxide, 1,2-propylene oxide, dioxolane, 4-methyldioxolane, dioxane, dimethyldioxane, 2-methoxyethanol, 2-ethoxyethanol, ethylene glycol diethyl ether, 2-n-butoxyethanol, 2-n-hexoxyethanol, 2-phenoxyethanol, 2- (2-ethylbutoxy) ethanol, ethylene glycol dibutyl ether, diethylene glycol Monomethyl ether, diethylene glycol monoethyl ether, diethylene glycol diethyl ether, diethylene glycol mono-n-butyl ether, Ethylene glycol di-n-butyl ether, diethylene glycol mono-n-hexyl ether, ethoxytriglycol, tetraethylene glyco
- ester solvent examples include diethyl carbonate, methyl acetate, ethyl acetate, ⁇ -butyrolactone, ⁇ -valerolactone, n-propyl acetate, iso-propyl acetate, n-butyl acetate, iso-butyl acetate, sec-butyl acetate, N-pentyl acetate, sec-pentyl acetate, 3-methoxybutyl acetate, methyl pentyl acetate, 2-ethylbutyl acetate, 2-ethylhexyl acetate, benzyl acetate, cyclohexyl acetate, methyl cyclohexyl acetate, n-nonyl acetate, methyl acetoacetate, aceto Ethyl acetate, ethylene glycol monomethyl ether, ethylene glycol monoethyl acetate, diethylene glycol monomethyl ether
- nitrogen-containing solvent examples include N-methylformamide, N, N-dimethylformamide, N, N-diethylformamide, acetamide, N-methylacetamide, N, N-dimethylacetamide, N-methylpropionamide, N-methyl
- ether solvents and ester solvents are preferable, and ether solvents and ester solvents having a glycol structure are more preferable from the viewpoint of excellent film formability.
- ether solvents and ester solvents having a glycol structure examples include propylene glycol monomethyl ether, propylene glycol monoethyl ether, propylene glycol monopropyl ether, propylene glycol monomethyl ether acetate, propylene glycol monoethyl ether acetate, propylene glycol monopropyl acetate
- examples include ether. Among these, propylene glycol monomethyl ether acetate is particularly preferable.
- the lower limit of the content of the ether solvent and the ester solvent having a glycol structure in the solvent is preferably 20% by mass, more preferably 60% by mass, still more preferably 90% by mass, and particularly preferably 100% by mass. preferable.
- the acid generator is a component that generates an acid by the action of heat or light and promotes crosslinking of the [A] compound.
- the composition for forming a resist underlayer film contains a [C] acid generator, the crosslinking reaction of the [A] compound is promoted, and the hardness of the formed film can be further increased.
- An acid generator can be used individually by 1 type or in combination of 2 or more types.
- Examples of the [C] acid generator include onium salt compounds and N-sulfonyloxyimide compounds.
- onium salt compounds examples include sulfonium salts, tetrahydrothiophenium salts, iodonium salts, ammonium salts, and the like.
- sulfonium salt examples include triphenylsulfonium trifluoromethanesulfonate, triphenylsulfonium nonafluoro-n-butanesulfonate, triphenylsulfonium perfluoro-n-octanesulfonate, triphenylsulfonium 2-bicyclo [2.2.1] hept- 2-yl-1,1,2,2-tetrafluoroethanesulfonate, 4-cyclohexylphenyldiphenylsulfonium trifluoromethanesulfonate, 4-cyclohexylphenyldiphenylsulfonium nonafluoro-n-butanesulfonate, 4-cyclohexylphenyldiphenylsulfonium perfluoro- n-octanesulfonate, 4-cyclohexylphenyldiphenylsulfonium 2-bicyclo [2.
- tetrahydrothiophenium salt examples include 1- (4-n-butoxynaphthalen-1-yl) tetrahydrothiophenium trifluoromethanesulfonate, 1- (4-n-butoxynaphthalen-1-yl) tetrahydrothiophenium nona.
- iodonium salt examples include diphenyliodonium trifluoromethanesulfonate, diphenyliodonium nonafluoro-n-butanesulfonate, diphenyliodonium perfluoro-n-octanesulfonate, diphenyliodonium 2-bicyclo [2.2.1] hept-2-yl- 1,1,2,2-tetrafluoroethanesulfonate, bis (4-t-butylphenyl) iodonium trifluoromethanesulfonate, bis (4-t-butylphenyl) iodonium nonafluoro-n-butanesulfonate, bis (4-t -Butylphenyl) iodonium perfluoro-n-octanesulfonate, bis (4-t-butylphenyl) iodonium 2-bicyclo [2.2.1] hept-2-yl-1,1,2,
- ammonium salts include triethylammonium trifluoromethanesulfonate, triethylammonium nonafluoro-n-butanesulfonate, trimethylammonium nonafluoro-n-butanesulfonate, tetraethylammonium nonafluoro-n-butanesulfonate, triethylammonium perfluoro-n-octane.
- ammonium salts include triethylammonium trifluoromethanesulfonate, triethylammonium nonafluoro-n-butanesulfonate, trimethylammonium nonafluoro-n-butanesulfonate, tetraethylammonium nonafluoro-n-butanesulfonate, triethylammonium perfluoro-n-octane.
- examples thereof include sulfonate, trie
- N-sulfonyloxyimide compounds include N- (trifluoromethanesulfonyloxy) bicyclo [2.2.1] hept-5-ene-2,3-dicarboximide, N- (nonafluoro-n-butanesulfonyloxy).
- the [C] acid generator is preferably an onium salt compound, more preferably an iodonium salt or an ammonium salt, and bis (4-t-butylphenyl) iodonium nonafluoro-n-butanesulfonate and triethylammonium nona. More preferred is fluoro-n-butanesulfonate.
- the lower limit of the content of the [C] acid generator is 0.1 part by mass with respect to 100 parts by mass of the [A] compound. Is preferable, 1 mass part is more preferable, and 3 mass parts is further more preferable. As an upper limit of the said content, 20 mass parts is preferable, 15 mass parts is more preferable, and 12 mass parts is further more preferable. [C] By making content of an acid generator into the said range, the crosslinking reaction of a [A] compound can be accelerated
- the cross-linking agent is a component that forms a cross-linking bond between components such as the compound [A] in the resist underlayer film forming composition by the action of heat or acid, or that forms a cross-linked structure by itself. is there.
- the resist underlayer film forming composition contains the [D] cross-linking agent, the hardness of the formed film can be increased.
- a crosslinking agent can be used individually by 1 type or in combination of 2 or more types.
- crosslinking agent examples include polyfunctional (meth) acrylate compounds, epoxy compounds, hydroxymethyl group-substituted phenol compounds, alkoxyalkyl group-containing phenol compounds, compounds having an alkoxyalkylated amino group, and the following formula (11- And random copolymers of acenaphthylene and hydroxymethyl acenaphthylene represented by P), compounds represented by the following formulas (11-1) to (11-12), and the like.
- polyfunctional (meth) acrylate compound examples include trimethylolpropane tri (meth) acrylate, ditrimethylolpropane tetra (meth) acrylate, pentaerythritol tri (meth) acrylate, pentaerythritol tetra (meth) acrylate, and dipentaerythritol penta.
- Examples of the epoxy compound include novolak type epoxy resins, bisphenol type epoxy resins, alicyclic epoxy resins, and aliphatic epoxy resins.
- hydroxymethyl group-substituted phenol compound examples include 2-hydroxymethyl-4,6-dimethylphenol, 1,3,5-trihydroxymethylbenzene, 3,5-dihydroxymethyl-4-methoxytoluene [2,6- Bis (hydroxymethyl) -p-cresol] and the like.
- alkoxyalkyl group-containing phenol compound examples include methoxymethyl group-containing phenol compounds and ethoxymethyl group-containing phenol compounds.
- Examples of the compound having an alkoxyalkylated amino group include a plurality of compounds in one molecule such as (poly) methylolated melamine, (poly) methylolated glycoluril, (poly) methylolated benzoguanamine, and (poly) methylolated urea.
- the compound having an alkoxyalkylated amino group may be a mixture in which a plurality of substituted compounds are mixed, or may include an oligomer component that is partially self-condensed.
- the compounds represented by the above formulas (11-1) to (11-12) can be synthesized by referring to the following documents, respectively.
- Compound represented by formula (11-1) Guo, Qun-Shen; Lu, Yong-Na; Liu, Bing; Xiao, Jian; Li, Jin-Shan Journal of Organic Chemistry, 2006, vol. 691, # 6 p. 1282-1287
- methoxymethyl group-containing phenolic compounds compounds having alkoxyalkylated amino groups, and random copolymers of acenaphthylene and hydroxymethylacenaphthylene are preferred and alkoxyalkylated.
- a compound having an amino group is more preferred, and 1,3,4,6-tetra (methoxymethyl) glycoluril is further preferred.
- the lower limit of the content of the [D] crosslinking agent is preferably 0.1 parts by mass with respect to 100 parts by mass of the [A] compound. 0.5 parts by mass is more preferable, 1 part by mass is further preferable, and 3 parts by mass is particularly preferable. As an upper limit of the said content, 100 mass parts is preferable, 50 mass parts is more preferable, 30 mass parts is further more preferable, 20 mass parts is especially preferable. [D] By making content of a crosslinking agent into the said range, the crosslinking reaction of a [A] compound can be caused more effectively.
- the composition for forming a resist underlayer film can improve the coating property by containing a surfactant, and as a result, the coating surface uniformity of the formed film is improved and the occurrence of coating spots is generated. Can be suppressed.
- Surfactant can be used individually by 1 type or in combination of 2 or more types.
- surfactant examples include polyoxyethylene lauryl ether, polyoxyethylene stearyl ether, polyoxyethylene oleyl ether, polyoxyethylene-n-octylphenyl ether, polyoxyethylene-n-nonylphenyl ether, polyethylene glycol dilaurate, polyethylene Nonionic surfactants such as glycol distearate are listed.
- Commercially available products include KP341 (Shin-Etsu Chemical Co., Ltd.), Polyflow No. 75, no.
- the lower limit of the surfactant content is preferably 0.01 parts by mass with respect to 100 parts by mass of the compound [A], 0.05 Part by mass is more preferable, and 0.1 part by mass is even more preferable.
- the upper limit of the said content 10 mass parts is preferable, 5 mass parts is more preferable, and 1 mass part is further more preferable.
- the resist underlayer film forming composition is a mixture of [A] compound, [B] solvent, and, if necessary, [C] acid generator, [D] cross-linking agent and other optional components at a predetermined ratio, Preferably, the obtained mixture can be prepared by filtering through a membrane filter of about 0.1 ⁇ m.
- the lower limit of the solid content concentration of the resist underlayer film forming composition is preferably 0.1% by mass, more preferably 1% by mass, further preferably 3% by mass, and particularly preferably 5% by mass.
- the upper limit of the solid content concentration is preferably 50% by mass, more preferably 30% by mass, further preferably 20% by mass, and particularly preferably 15% by mass.
- the resist underlayer film forming composition can form a film having excellent coating properties and excellent etching resistance, flatness, and heat resistance, in order to form a resist underlayer film in the manufacture of semiconductor devices, etc. It can be used suitably. It can also be used to form protective films, insulating films, and colored cured films in display devices and the like.
- the resist underlayer film of the present invention is formed from the resist underlayer film forming composition. Since the resist underlayer film is formed from the resist underlayer film forming composition having the above-described characteristics, it is excellent in etching resistance, flatness, and heat resistance.
- the method for forming the resist underlayer film includes a step of applying the resist underlayer film forming composition to one surface side of the substrate (hereinafter also referred to as “coating step”) and a coating obtained by the coating step. And a step of heating the film (hereinafter also referred to as “heating step”).
- the resist underlayer film forming composition having the above-described characteristics is used, so that a resist underlayer film having excellent etching resistance, flatness, and heat resistance can be formed.
- the resist underlayer film forming composition is applied to one surface side of the substrate.
- the substrate examples include a silicon wafer and a wafer coated with aluminum.
- the coating method of the resist underlayer film forming composition is not particularly limited, and can be carried out by an appropriate method such as spin coating, cast coating, roll coating, etc. Can be formed.
- the heating of the coating film is usually performed in the atmosphere.
- heating temperature 150 ° C is preferred, 200 ° C is more preferred, and 250 ° C is still more preferred.
- 500 degreeC is preferable, 450 degreeC is more preferable, and 400 degreeC is further more preferable.
- the heating temperature is less than 150 ° C., the oxidative crosslinking does not proceed sufficiently, and there is a possibility that the characteristics necessary for the resist underlayer film may not be exhibited.
- As a minimum of heating time 15 seconds are preferred, 30 seconds are more preferred, and 45 seconds are still more preferred.
- the upper limit of the heating time is preferably 1,200 seconds, more preferably 600 seconds, and even more preferably 300 seconds.
- ⁇ Before heating the coating film at a temperature of 150 ° C or higher and 500 ° C or lower it may be preheated at a temperature of 60 ° C or higher and 250 ° C or lower.
- As a minimum of heating time in preliminary heating 10 seconds are preferred and 30 seconds are more preferred.
- the upper limit of the heating time is preferably 300 seconds, and more preferably 180 seconds.
- the coating film is heated to form a resist underlayer film.
- the resist underlayer film forming composition contains a [C] acid generator, and [C]
- the acid generator is a radiation-sensitive acid generator
- the resist underlayer film can be formed by curing the film by combining exposure and heating.
- the radiation used for this exposure includes electromagnetic waves such as visible light, ultraviolet light, far ultraviolet light, X-rays and ⁇ rays, and particle beams such as electron beams, molecular beams and ion beams, depending on the type of [C] acid generator. It is selected appropriately.
- the lower limit to the average thickness of the resist underlayer film to be formed is preferably 50 nm, more preferably 100 nm, and even more preferably 200 nm.
- the upper limit of the average thickness is preferably 3,000 nm, more preferably 2,000 nm, and even more preferably 500 nm.
- the method for producing a patterned substrate of the present invention comprises a step of forming a resist pattern on the opposite surface side of the resist underlayer film obtained by the resist underlayer film forming method (hereinafter referred to as “resist pattern forming step”). And a step of performing etching using the resist pattern as a mask (hereinafter also referred to as “etching step”).
- the resist underlayer film having excellent etching resistance, flatness and heat resistance obtained by the above-described method for forming the resist underlayer film is used.
- a substrate can be obtained.
- the patterned substrate manufacturing method includes a step of forming an intermediate layer (intermediate film) on the side opposite to the substrate of the resist underlayer film, if necessary, before the resist pattern forming step. May be. Hereinafter, each step will be described.
- an intermediate layer is formed on the surface opposite to the substrate of the resist underlayer film.
- This intermediate layer is a layer provided with the above functions in order to further supplement the functions of the resist underlayer film and / or the resist film or provide functions that these resist layers do not have in resist pattern formation.
- the antireflection film is formed as an intermediate layer, the antireflection function of the resist underlayer film can be further supplemented.
- This intermediate layer can be formed of an organic compound or an inorganic oxide.
- the organic compound include commercially available products such as “DUV-42”, “DUV-44”, “ARC-28”, “ARC-29” (hereinafter, Brewer Science); “AR-3”, “AR -19 ”(above, Rohm and Haas).
- As said inorganic oxide "NFC SOG01”, “NFC SOG04”, “NFC SOG080” (above, JSR company) etc. are mentioned as a commercial item, for example.
- polysiloxane, titanium oxide, alumina oxide, tungsten oxide, or the like formed by a CVD method can be used.
- the method for forming the intermediate layer is not particularly limited, and for example, a coating method, a CVD method, or the like can be used. Among these, the coating method is preferable. When the coating method is used, the intermediate layer can be continuously formed after the resist underlayer film is formed. Moreover, although the average thickness of an intermediate
- resist pattern formation process In this step, a resist pattern is formed on the opposite side of the resist underlayer film from the substrate.
- a resist pattern is formed on the side of the intermediate layer opposite to the substrate. Examples of the method for performing this step include a method using a resist composition.
- the resist composition specifically, by coating the resist composition so that the resist film to be obtained has a predetermined thickness, and then volatilizing the solvent in the coating film by pre-baking, A resist film is formed.
- the resist composition examples include a positive or negative chemically amplified resist composition containing a radiation-sensitive acid generator, a positive resist composition containing an alkali-soluble resin and a quinonediazide-based photosensitizer, and an alkali-soluble composition.
- examples thereof include a negative resist composition containing a resin and a crosslinking agent.
- the lower limit of the solid content concentration of the resist composition is preferably 0.3% by mass, and more preferably 1% by mass.
- As an upper limit of the said solid content concentration 50 mass% is preferable and 30 mass% is more preferable.
- the resist composition is generally filtered through a filter having a pore diameter of about 0.2 ⁇ m and provided for forming a resist film. In this step, a commercially available resist composition can be used as it is.
- the coating method of the resist composition is not particularly limited, and examples thereof include a spin coating method.
- the pre-baking temperature is appropriately adjusted according to the type of resist composition to be used, but the lower limit of the temperature is preferably 30 ° C., more preferably 50 ° C. As an upper limit of the said temperature, 200 degreeC is preferable and 150 degreeC is more preferable.
- the lower limit of the pre-baking time is preferably 10 seconds, and more preferably 30 seconds.
- the upper limit of the time is preferably 600 seconds, and more preferably 300 seconds.
- the formed resist film is exposed by selective radiation irradiation.
- electromagnetic waves such as visible rays, ultraviolet rays, far ultraviolet rays, X-rays, ⁇ rays, etc., depending on the type of the radiation-sensitive acid generator used in the resist composition; It is appropriately selected from particle beams such as ion beams.
- KrF excimer laser light (248 nm), ArF excimer laser light (193 nm), F 2 excimer laser light (wavelength 157 nm), Kr 2 excimer laser light (wavelength 147 nm), ArKr excimer laser light (Wavelength 134 nm) and extreme ultraviolet rays (wavelength 13.5 nm, etc., EUV) are more preferable, and KrF excimer laser light, ArF excimer laser light, and EUV are more preferable.
- post-baking can be performed to improve resolution, pattern profile, developability, and the like.
- the post-baking temperature is appropriately adjusted according to the type of resist composition to be used, but the lower limit of the temperature is preferably 50 ° C., more preferably 70 ° C. As an upper limit of the said temperature, 200 degreeC is preferable and 150 degreeC is more preferable.
- the lower limit of the post-bake time is preferably 10 seconds, and more preferably 30 seconds.
- the upper limit of the time is preferably 600 seconds, and more preferably 300 seconds.
- the exposed resist film is developed with a developer to form a resist pattern.
- This development may be alkali development or organic solvent development.
- the developer in the case of alkali development, for example, sodium hydroxide, potassium hydroxide, sodium carbonate, sodium silicate, sodium metasilicate, ammonia, ethylamine, n-propylamine, diethylamine, di-n-propylamine, triethylamine, methyl Diethylamine, dimethylethanolamine, triethanolamine, tetramethylammonium hydroxide, tetraethylammonium hydroxide, pyrrole, piperidine, choline, 1,8-diazabicyclo [5.4.0] -7-undecene, 1,5-diazabicyclo [ 4.3.0] -5-nonene and the like.
- a water-soluble organic solvent such as alcohols such as methanol and ethanol, a surfactant, and the like
- examples of the developing solution include various organic solvents exemplified as the [B] solvent of the resist underlayer film forming composition described above.
- the resist pattern is formed by washing and drying.
- a method for performing the resist pattern forming step in addition to the method using the resist composition described above, a method using a nanoimprint method, a method using a self-organizing composition, and the like can also be used.
- etching is performed using the resist pattern as a mask. As a result, a pattern is formed on the substrate.
- the number of times of etching may be one time or a plurality of times, that is, the etching may be sequentially performed using a pattern obtained by etching as a mask, but a plurality of times is preferable from the viewpoint of obtaining a pattern having a better shape.
- the etching is performed a plurality of times, when the intermediate layer is not provided, the resist underlayer film and the substrate are sequentially etched, and when the intermediate layer is provided, the intermediate layer, the resist underlayer film and the substrate are sequentially etched.
- the etching method include dry etching and wet etching. Among these, dry etching is preferable from the viewpoint of improving the shape of the substrate pattern. For this dry etching, for example, gas plasma such as oxygen plasma is used. After the etching, a patterned substrate having a predetermined pattern is obtained.
- the said compound is a compound which has the said group (I). Since the compound has the properties described above, it can be suitably used as a component of the resist underlayer film forming composition.
- the compound is described as the [A] compound in the section of the resist underlayer film forming composition.
- [Mw and Mn] [A] Mw and Mn when the compound is a resin, using Tosoh's GPC columns (“G2000HXL” and “G3000HXL”), flow rate: 1.0 mL / min, elution solvent: tetrahydrofuran, column Temperature: Measurement was performed by gel permeation chromatography (detector: differential refractometer) using monodisperse polystyrene as a standard under analysis conditions of 40 ° C.
- Average thickness of film The average thickness of the film was measured using a spectroscopic ellipsometer (“M2000D” from JA WOOLLAM).
- Compounds (A-1), (A-9) and (A-10) are resins each having a structural unit represented by the above formula.
- Example 1-1 In a 500 mL three-necked flask equipped with a thermometer, a condenser and a magnetic stirrer, 23.63 g of acenaphthenequinone, 20.0 g of biphenyl and 130 g of dichloromethane were charged and dissolved in a nitrogen atmosphere. Next, 17.75 g of trifluoroacetic acid and 23.36 g of trifluoromethanesulfonic acid were added, and the mixture was stirred at 20 ° C. for 12 hours for polymerization. Thereafter, the polymerization reaction solution was poured into a large amount of methanol, and the precipitated resin was filtered and dried under reduced pressure at 60 ° C.
- the reaction solution was added to a large amount of water, and then extracted by adding 120 g of methyl isobutyl ketone.
- the obtained organic layer was washed twice with water and then poured into 600 g of hexane for reprecipitation.
- the resulting precipitate was collected by filtration and dried under reduced pressure at 60 ° C. overnight to obtain the compound (A-1) (yield 78%).
- Mw of the compound (A-1) was 1,500.
- Example 1-2 A 500 mL three-necked flask equipped with a thermometer, a condenser, and a magnetic stirrer was charged with 15 g of a compound represented by the following formula (B-2) and 120 g of tetrahydrofuran under a nitrogen atmosphere and dissolved at room temperature. After cooling to 0 ° C., 155 g of a solution of allyl magnesium chloride in tetrahydrofuran (1M) was added dropwise over 0.5 hours. After completion of dropping, the mixture was heated to 60 ° C. and reacted for 3 hours.
- B-2 a compound represented by the following formula
- reaction solution was added to a large amount of water, and then extracted by adding 120 g of methyl isobutyl ketone.
- the obtained organic layer was washed twice with water and then poured into 600 g of hexane for reprecipitation.
- the obtained precipitate was collected by filtration and dried under reduced pressure at 60 ° C. overnight to obtain the compound (A-2) (yield 80%).
- Example 1-2 the above compound (A-3) was prepared in the same manner as in Example 1-2 except that the compound represented by the following formula (B-3) was used instead of the compound (B-2). was synthesized.
- Example 1-4 A 500 mL three-necked flask equipped with a thermometer, a condenser, and a magnetic stirrer was charged with 40 g of a compound represented by the following formula (B-4) and 120 g of tetrahydrofuran under a nitrogen atmosphere and dissolved at room temperature. After cooling to 0 ° C., 155 g of a solution of allyl magnesium chloride in tetrahydrofuran (1M) was added dropwise over 0.5 hours. After completion of dropping, the mixture was heated to 60 ° C. and reacted for 3 hours.
- reaction solution was added to a large amount of water, and then extracted by adding 120 g of methyl isobutyl ketone.
- the obtained organic layer was washed twice with water and then poured into 600 g of hexane for reprecipitation.
- the obtained precipitate was collected by filtration and dried under reduced pressure at 60 ° C. overnight to obtain the compound (A-4).
- Example 1-5 In Example 1-2, the above compound (A-5) was prepared in the same manner as in Example 1-2 except that the compound represented by the following formula (B-5) was used instead of the compound (B-2). Was synthesized.
- Example 1-6 the above compound (A-6) was prepared in the same manner as in Example 1-4, except that the compound represented by the following formula (B-6) was used instead of compound (B-4). ) was synthesized.
- Example 1-7 In a 500 mL three-necked flask equipped with a thermometer, a condenser, and a magnetic stirrer, 40 g of the compound (A-4) and 200 g of tetrahydrofuran were charged in a nitrogen atmosphere and dissolved at room temperature. After cooling to 0 ° C., 15 g of sodium hydride oil dispersion (60% by mass) was added and allowed to react for 1 hour. After adding 46 g of methyl iodide, the mixture was reacted at 0 ° C. for 1 hour. After completion of the reaction, the reaction solution was added to a large amount of water, and then extracted by adding 120 g of methyl isobutyl ketone.
- Example 1-8 To a 500 mL three-necked flask equipped with a thermometer, a condenser, and a magnetic stirrer, 190 g of a cyclohexane solution of n-butyllithium (2.3 M) was added in a nitrogen atmosphere, and cooled to -78 ° C. After adding 18 g of tetramethylethylenediamine to this, 36 g of propargyl bromide was added dropwise and stirred for 20 minutes. To this solution, a solution of 40 g of a compound represented by the following formula (B-4) in 40 g of tetrahydrofuran was dropped, and the temperature was raised to room temperature over 2 hours.
- B-4 a compound represented by the following formula (B-4) in 40 g of tetrahydrofuran
- reaction solution was added to a large amount of water, and then extracted by adding 120 g of methyl isobutyl ketone.
- the obtained organic layer was washed twice with water and then poured into 600 g of hexane for reprecipitation.
- the obtained precipitate was collected by filtration and dried under reduced pressure at 60 ° C. overnight to obtain the compound (A-8) (yield 83%).
- Example 1-9 In a 5,000 mL three-necked flask equipped with a thermometer, a condenser and a magnetic stirrer, 0.2 mol of 1-formylacenaphthylene and 0.6 mol of norbornene were charged into a reactor under a nitrogen atmosphere, and 1-formylacena After dissolving in 1,2-dichloroethane having a mass 3 times the total mass of butylene and norbornene, the mixture was stirred for 30 minutes. 0.01 mol of AIBN was gradually added and reacted at 70 ° C. for about 12 hours to obtain a resin represented by the following formula (B-7) as an intermediate.
- B-7 a resin represented by the following formula (B-7) as an intermediate.
- Example 1-10 A 500 mL three-necked flask equipped with a thermometer, a condenser and a magnetic stirrer was charged with 36 g (200 mmol) of 1-formylacenaphthylene and 1,2-dichloroethane having a mass three times that of 1-formylacenaphthylene under a nitrogen atmosphere. After dissolving, the mixture was stirred for 30 minutes. 20 mmol of AIBN was gradually added and reacted at 70 ° C. for about 12 hours. After completion of the reaction, the reaction solution was extracted with a large amount of water. The obtained organic layer was washed twice with water and then poured into 600 g of hexane for reprecipitation.
- reaction solution was added to a large amount of water, and then extracted by adding 120 g of methyl isobutyl ketone.
- the obtained organic layer was washed twice with water and then poured into 600 g of hexane for reprecipitation.
- the obtained precipitate was collected by filtration and dried under reduced pressure at 60 ° C. overnight to obtain the compound (A-10).
- Mw of the compound (A-10) was 1,500.
- Example 2-1 [A] 10 parts by mass of (A-1) as a compound and 0.5 part by mass of (C-1) as an [C] acid generator are dissolved in 90 parts by mass of (B-1) as a [B] solvent. did. The resulting solution was filtered through a membrane filter having a pore size of 0.1 ⁇ m to prepare a resist underlayer film forming composition (J-1).
- Example 2-2 to 2-12 and Comparative Example 2-1 Resist underlayer film forming compositions (J-2) to (J-13) were prepared in the same manner as in Example 2-1, except that the components having the types and contents shown in Table 1 were used. . “-” In Table 1 indicates that the corresponding component was not used.
- Examples 3-1 to 3-12 and Comparative Example 3-1 The prepared resist underlayer film forming composition was applied on a silicon wafer substrate by a spin coating method. Next, in an air atmosphere, heating (baking) is performed at a heating temperature (° C.) and a heating time (sec) shown in Table 2 below to form a resist underlayer film having an average thickness of 200 nm. A substrate with a resist underlayer film on which was formed was obtained. “-” In Table 2 indicates that Comparative Example 3-1 is a criterion for evaluation of etching resistance.
- the etching resistance is “A” (very good) when the ratio is 0.95 or more and less than 0.98, “B” (good) when the ratio is 0.98 or more and less than 1.00, and 1.00 or more. In the case of, it was evaluated as “C” (defective).
- the composition for forming a resist underlayer film prepared above is formed on a silicon substrate 1 on which a trench pattern having a depth of 100 nm and a width of 10 ⁇ m is formed (“CLEAN TRACK ACT12” manufactured by Tokyo Electron). ) was applied by spin coating. The rotation speed of the spin coat was the same as that in the case of forming a resist underlayer film having an average thickness of 200 nm in the above-mentioned “formation of resist underlayer film”.
- baking is performed at 250 ° C. for 60 seconds in an air atmosphere to form a film 2 having an average thickness of 200 nm in a non-trench pattern portion, and a silicon substrate with a film in which the silicon substrate is covered with the film Obtained.
- the cross-sectional shape of the silicon substrate with the film was observed with a scanning electron microscope (“S-4800” manufactured by Hitachi High-Technologies Corporation).
- S-4800 manufactured by Hitachi High-Technologies Corporation.
- the height of the resist underlayer film at the central portion b of the trench pattern, The difference ( ⁇ FT) from the height in the non-trench pattern portion a at a location 5 ⁇ m from the end was used as an index of flatness.
- the flatness was evaluated as “A” (very good) when this ⁇ FT was less than 40 nm, “B” (good) when it was 40 nm or more and less than 60 nm, and “C” (bad) when it was 60 nm or more. . Note that the height difference shown in FIG. 1 is exaggerated from the actual one.
- the prepared resist underlayer film forming composition is applied onto a silicon wafer having a diameter of 8 inches by spin coating, and baked at 250 ° C. for 60 seconds in an air atmosphere to form a resist underlayer film.
- a substrate with a resist underlayer film was obtained.
- the resist underlayer film of the substrate with the resist underlayer film is scraped to recover the powder, and the resist underlayer film powder is used for measurement by a TG-DTA apparatus ("TG-DTA2000SR" from NETZSCH). The mass before heating was measured. Next, using the above TG-DTA apparatus, the sample was heated to 400 ° C.
- M L ⁇ (m1 ⁇ m2) / m1 ⁇ ⁇ 100
- M L is a mass reduction rate (%)
- m1 is the pre-heating the mass (mg)
- m @ 2 is the mass (mg) at 400 ° C..
- the heat resistance is better as the mass reduction rate of the powder as the sample is smaller, because there are fewer sublimates and decomposition products of the resist underlayer film that are generated when the resist underlayer film is heated.
- the heat resistance is “A” (very good) when the mass reduction rate is less than 5%, “B” (good) when it is 5% or more and less than 10%, and “C” (when it is 10% or more). Bad).
- the resist underlayer film forming compositions of the examples can form a resist underlayer film having etching resistance, flatness and heat resistance while exhibiting excellent coating properties. .
- the composition for forming a resist underlayer film of the present invention can form a resist underlayer film having excellent etching resistance, flatness and heat resistance while exhibiting excellent coating properties.
- the resist underlayer film of the present invention is excellent in etching resistance, flatness and heat resistance.
- a resist underlayer film excellent in etching resistance, flatness and heat resistance can be formed while exhibiting excellent coating properties.
- a substrate having a good pattern shape can be obtained by using the excellent resist underlayer film formed as described above.
- the compound of the present invention can be suitably used as a component of the resist underlayer film forming composition. Therefore, these can be suitably used for manufacturing semiconductor devices and the like that are expected to be further miniaturized in the future.
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Abstract
Description
当該レジスト下層膜形成用組成物は、[A]化合物と[B]溶媒とを含有する。当該レジスト下層膜形成用組成物は、好適成分として、酸発生剤(以下、「[C]酸発生剤」ともいう)及び/又は架橋剤(以下、「[D]架橋剤」ともいう)を含有していてもよく、本発明の効果を損なわない範囲において、その他の任意成分を含有していてもよい。以下各成分について説明する。
[A]化合物は、下記式(1)で表される基(以下、「基(I)」ともいう)を有する化合物である。[A]化合物は、基(I)を1つ有していてもよく、2つ以上有していてもよい。[A]化合物は1種又は2種以上を用いることができる。
エタン、プロパン、ブタン等のアルカン;
エテン、プロペン、ブテン等のアルケン;
エチン、プロピン、ブチン等のアルキンなどの炭素数1~10の鎖状炭化水素、
シクロペンタン、シクロヘキサン等のシクロアルカン;
ノルボルナン、アダマンタン、トリシクロデカン等の橋かけ環飽和炭化水素などの脂環式飽和炭化水素;
シクロペンテン、シクロヘキセン等のシクロアルケン;
ノルボルネン、トリシクロデセン等の橋かけ環不飽和炭化水素などの脂環式不飽和炭化水素などの炭素数3~10の脂環式炭化水素;
ベンゼン、トルエン、キシレン、ナフタレン等のアレーンなどの炭素数6~10の芳香族炭化水素などの炭化水素から(m+n)個の水素原子を除いた基等が挙げられる。
芳香環含有化合物(I)は、基(I)及び芳香環を有し、分子量が300以上3,000以下の化合物である。芳香環含有化合物(I)が分子量分布を有する場合、芳香環含有化合物(I)の分子量は、例えばゲルパーミエーションクロマトグラフィー(GPC)によるポリスチレン換算重量平均分子量(Mw)である。
樹脂(I)は、基(I)を有する樹脂である。樹脂(I)としては、主鎖に芳香環を有する樹脂、主鎖に芳香環を有さず側鎖に芳香環を有する樹脂等が挙げられる。ここで、「主鎖」とは、[A]化合物における原子により構成される鎖のうち最も長いものをいう。「側鎖」とは、[A]化合物における原子により構成される鎖のうち最も長いもの以外をいう。樹脂(I)は、通常、基(I)を複数個有する化合物である。
上記式(p-2)中、Z2は、mが1であり、R1が上記式(1-1)である場合の基(I)である。
[B]溶媒は、[A]重合体及び必要に応じて含有する任意成分を溶解又は分散することができれば特に限定されない。
[C]酸発生剤は、熱や光の作用により酸を発生し、[A]化合物の架橋を促進する成分である。当該レジスト下層膜形成用組成物が[C]酸発生剤を含有することで[A]化合物の架橋反応が促進され、形成される膜の硬度をより高めることができる。[C]酸発生剤は、1種単独で又は2種以上を組み合わせて用いることができる。
[D]架橋剤は、熱や酸の作用により、当該レジスト下層膜形成用組成物中の[A]化合物等の成分同士の架橋結合を形成するか、又は自らが架橋構造を形成する成分である。当該レジスト下層膜形成用組成物が[D]架橋剤を含有することで、形成される膜の硬度を高めることができる。[D]架橋剤は、1種単独で又は2種以上を組み合わせて用いることができる。
式(11-1)で表される化合物:
Guo,Qun-Sheng;Lu,Yong-Na;Liu,Bing;Xiao,Jian;Li,Jin-Shan Journal of Organometallic Chemistry,2006,vol.691,#6 p.1282-1287
式(11-2)で表される化合物:
Badar,Y.et al. Journal of the Chemical Society,1965,p.1412-1418
式(11-3)で表される化合物:
Hsieh,Jen-Chieh;Cheng,Chien-Hong Chemical Communications(Cambridge,United Kingdom),2008,#26 p.2992-2994
式(11-4)で表される化合物:
特開平5-238990号公報
式(11-5)で表される化合物:
Bacon,R.G.R.;Bankhead,R. Journal of the Chemical Society,1963,p.839-845
式(11-6)、(11-8)、(11-11)及び(11-12)で表される化合物:
Macromolecules 2010,vol43,p2832-2839
式(11-7)、(11-9)及び(11-10)で表される化合物:
Polymer Journal 2008,vol.40,No.7,p645-650、及びJournal of Polymer Science:Part A,Polymer Chemistry,Vol 46,p4949-4958
その他の任意成分として、例えば界面活性剤等が挙げられる。
当該レジスト下層膜形成用組成物は、界面活性剤を含有することで塗工性を向上させることができ、その結果、形成される膜の塗工面均一性が向上し、かつ塗工斑の発生を抑制することができる。界面活性剤は、1種単独で又は2種以上を組み合わせて用いることができる。
当該レジスト下層膜形成用組成物は、[A]化合物、[B]溶媒、必要に応じて、[C]酸発生剤、[D]架橋剤及びその他の任意成分を所定の割合で混合し、好ましくは得られた混合物を0.1μm程度のメンブランフィルター等でろ過することにより調製できる。当該レジスト下層膜形成用組成物の固形分濃度の下限としては、0.1質量%が好ましく、1質量%がより好ましく、3質量%がさらに好ましく、5質量%が特に好ましい。上記固形分濃度の上限としては、50質量%が好ましく、30質量%がより好ましく、20質量%がさらに好ましく、15質量%が特に好ましい。
本発明のレジスト下層膜は、当該レジスト下層膜形成用組成物から形成される。当該レジスト下層膜は、上述の特性を有する当該レジスト下層膜形成用組成物から形成されるので、エッチング耐性、平坦性及び耐熱性に優れている。
当該レジスト下層膜の形成方法は、当該レジスト下層膜形成用組成物を基板の一方の面側に塗工する工程(以下、「塗工工程」ともいう)と、上記塗工工程により得られる塗工膜を加熱する工程(以下、「加熱工程」ともいう)とを備える。当該レジスト下層膜の形成方法によれば、上述の特性を有するレジスト下層膜形成用組成物を用いるので、エッチング耐性、平坦性及び耐熱性に優れるレジスト下層膜を形成することができる。
本工程では、当該レジスト下層膜形成用組成物を基板の一方の面側に塗工する。
本工程では、上記塗工工程により得られる塗工膜を加熱する。これにより、レジスト下層膜が形成される。
本発明のパターニングされた基板の製造方法は、当該レジスト下層膜の形成方法により得られるレジスト下層膜の上記基板とは反対の面側にレジストパターンを形成する工程(以下、「レジストパターン形成工程」ともいう)と、上記レジストパターンをマスクとしたエッチングを行う工程(以下、「エッチング工程」ともいう)とを備える。
本工程では、上記レジスト下層膜の基板とは反対の面側に中間層を形成する。この中間層は、レジストパターン形成において、レジスト下層膜及び/又はレジスト膜が有する機能をさらに補ったり、これらが有していない機能を与えたりするために上記機能が付与された層のことである。例えば反射防止膜を中間層として形成した場合、レジスト下層膜の反射防止機能をさらに補うことができる。
本工程では上記レジスト下層膜の基板とは反対の面側にレジストパターンを形成する。上記中間層形成工程を行った場合は、中間層の基板とは反対の面側にレジストパターンを形成する。この工程を行う方法としては、例えばレジスト組成物を用いる方法等が挙げられる。
本工程では、上記レジストパターンをマスクとしたエッチングを行う。これにより、基板にパターンが形成される。エッチングの回数としては1回でも、複数回、すなわちエッチングにより得られるパターンをマスクとして順次エッチングを行ってもよいが、より良好な形状のパターンを得る観点からは、複数回が好ましい。複数回のエッチングを行う場合、上記中間層を有さない場合はレジスト下層膜、基板の順に順次エッチングし、上記中間層を有する場合は中間層、レジスト下層膜、基板の順に順次エッチングを行う。エッチングの方法としては、ドライエッチング、ウエットエッチング等が挙げられる。これらの中で、基板のパターンの形状をより良好なものとする観点から、ドライエッチングが好ましい。このドライエッチングには、例えば酸素プラズマ等のガスプラズマ等が用いられる。上記エッチングの後、所定のパターンを有するパターニングされた基板が得られる。
当該化合物は、上記基(I)を有する化合物である。当該化合物は、上述の性質を有するので、当該レジスト下層膜形成用組成物の成分として好適に用いることができる。当該化合物は、当該レジスト下層膜形成用組成物の項で[A]化合物として説明している。
[A]化合物が樹脂である場合のMw及びMnは、東ソー社のGPCカラム(「G2000HXL」2本及び「G3000HXL」1本)を用い、流量:1.0mL/分、溶出溶媒:テトラヒドロフラン、カラム温度:40℃の分析条件で、単分散ポリスチレンを標準とするゲルパーミエーションクロマトグラフィー(検出器:示差屈折計)により測定した。
膜の平均厚みは、分光エリプソメータ(J.A.WOOLLAM社の「M2000D」)を用いて測定した。
下記式(A-1)~(A-10)で表される化合物を以下に示す手順により合成した。なお、表1に記載の[A]化合物の酸素原子含有量は、化合物の構造から算出した値である。
温度計、コンデンサー及びマグネチックスターラーを備えた500mL3口フラスコに、窒素雰囲気下、アセナフテンキノン23.63g、ビフェニル20.0g及びジクロロメタン130gを仕込み、溶解させた。次いで、トリフルオロ酢酸17.75g及びトリフルオロメタンスルホン酸23.36gを加え、20℃で12時間攪拌して重合した。その後、重合反応液を多量のメタノール中に投入し、沈殿した樹脂をろ過後、60℃で一晩減圧乾燥し、下記式(B-1)で表される樹脂を得た。次に、温度計、コンデンサー及びマグネチックスターラーを備えた500mL3口フラスコに、窒素雰囲気下、樹脂(B-1)40g及びテトラヒドロフラン120gを仕込み、室温にて溶解させた。0℃に冷却後、アリル塩化マグネシウムのテトラヒドロフラン溶液(1M)155gを0.5時間かけて滴下した。滴下終了後、60℃に加温して3時間反応させた。反応終了後、反応液に多量の水に加えた後、メチルイソブチルケトン120gを加えて抽出を行った。得られた有機層を、水洗を2回実施した後、600gのヘキサンに投入し再沈澱を行った。得られた沈澱物をろ取した後、60℃で一晩減圧乾燥することで、上記化合物(A-1)を得た(収率78%)。化合物(A-1)のMwは、1,500であった。
温度計、コンデンサー及びマグネチックスターラーを備えた500mL3口フラスコに、窒素雰囲気下、下記式(B-2)で表される化合物15g及びテトラヒドロフラン120gを仕込み、室温にて溶解させた。0℃に冷却後、アリル塩化マグネシウムのテトラヒドロフラン溶液(1M)155gを0.5時間かけて滴下した。滴下終了後、60℃に加温して3時間反応させた。反応終了後、反応液に多量の水に加えた後、メチルイソブチルケトン120gを加えて抽出を行った。得られた有機層を、水洗を2回実施した後、600gのヘキサンに投入し再沈澱を行った。得られた沈澱物をろ取した後、60℃で一晩減圧乾燥することで、上記化合物(A-2)を得た(収率80%)。
実施例1-2において、化合物(B-2)の代わりに下記式(B-3)で表される化合物を用いた以外は、実施例1-2と同様にして上記化合物(A-3)を合成した。
温度計、コンデンサー及びマグネチックスターラーを備えた500mL3口フラスコに、窒素雰囲気下、下記式(B-4)で表される化合物40g及びテトラヒドロフラン120gを仕込み、室温にて溶解させた。0℃に冷却後、アリル塩化マグネシウムのテトラヒドロフラン溶液(1M)155gを0.5時間かけて滴下した。滴下終了後、60℃に加温して3時間反応させた。反応終了後、反応液に多量の水に加えた後、メチルイソブチルケトン120gを加えて抽出を行った。得られた有機層を、水洗を2回実施した後、600gのヘキサンに投入し再沈澱を行った。得られた沈澱物をろ取した後、60℃で一晩減圧乾燥することで、上記化合物(A-4)を得た。
実施例1-2において、化合物(B-2)の代わりに下記式(B-5)で表される化合物を用いた以外は、実施例1-2と同様にして上記化合物(A-5)を合成した。
実施例1-4において、化合物(B-4)の代わりに下記式(B-6)で表される化合物を用いた以外は、実施例1-4と同様にして、上記化合物(A-6)を合成した。
温度計、コンデンサー及びマグネチックスターラーを備えた500mL3口フラスコに、窒素雰囲気下、上記化合物(A-4)40g及びテトラヒドロフラン200gを仕込み、室温にて溶解させた。0℃に冷却後、水素化ナトリウムのオイルディスパージョン(60質量%)15gを加え、1時間反応させた。ヨウ化メチル46gを加えた後、0℃で1時間反応させた。反応終了後、反応液に多量の水に加えた後、メチルイソブチルケトン120gを加えて抽出を行った。得られた有機層を、水洗を2回実施した後、600gのヘキサンに投入し再沈澱を行った。得られた沈澱物をろ取した後、60℃で一晩減圧乾燥することで、上記化合物(A-7)を得た(収率84%)。
温度計、コンデンサー及びマグネチックスターラーを備えた500mL3口フラスコに、窒素雰囲気下、n-ブチルリチウムのシクロヘキサン溶液(2.3M)190gを加え、-78℃に冷却した。これにテトラメチルエチレンジアミン18gを加えた後、臭化プロパルギル36gを滴下し20分撹拌した。この溶液に対し、下記式(B-4)で表される化合物40gのテトラヒドロフラン40g溶液を滴下し、2時間かけて室温まで昇温させた。反応終了後、反応液に多量の水に加えた後、メチルイソブチルケトン120gを加えて抽出を行った。得られた有機層を、水洗を2回実施した後、600gのヘキサンに投入し再沈澱を行った。得られた沈澱物をろ取した後、60℃で一晩減圧乾燥することで、上記化合物(A-8)を得た(収率83%)。
温度計、コンデンサー及びマグネチックスターラーを備えた5,000mL3口フラスコに、窒素雰囲気下、0.2molの1-ホルミルアセナフチレンと0.6molのノルボルネンとを反応器に投入し、1-ホルミルアセナフチレン及びノルボルネンの合計質量の3倍質量の1,2-ジクロロエタンに溶かした後、30分間撹拌した。0.01molのAIBNを徐々に投入して70℃で12時間程度反応させ、下記式(B-7)で表される樹脂を中間体として得た。その後、0.07molのアリルマグネシウムブロミドを徐々に加えた。常温を維持したまま3時間反応を行った後、300mLの蒸留水を加えて反応を終結させた。有機層を十分な水で水洗した後、有機層のみを別に分離して無水硫酸マグネシウムで少量の水分を除去した。固体をろ別した後、得られた溶液から減圧下で溶媒を除去し、上記化合物(A-9)を得た。化合物(A-9)のMwは、4,300であった。
温度計、コンデンサー及びマグネチックスターラーを備えた500mL3口フラスコに、窒素雰囲気下、1-ホルミルアセナフチレン36g(200mmol)及び1-ホルミルアセナフチレンの3倍質量の1,2-ジクロロエタンを仕込み、溶解させた後、30分間撹拌した。20mmolのAIBNを徐々に投入して70℃で12時間程度反応させた。反応終了後、反応液に多量の水に加え抽出を行った。得られた有機層を、水洗を2回実施した後、600gのヘキサンに投入し再沈澱を行った。得られた沈澱物をろ取した後、60℃で一晩減圧乾燥することで、下記式(B-8)で表される樹脂を得た。
次に、温度計、コンデンサー及びマグネチックスターラーを備えた500mL3口フラスコに、窒素雰囲気下、樹脂(B-8)15g及びテトラヒドロフラン120gを仕込み、室温にて溶解させた。0℃に冷却後、アリル塩化マグネシウムのテトラヒドロフラン溶液(1M)155gを0.5時間かけて滴下した。滴下終了後、60℃に加温して3時間反応させた。反応終了後、反応液に多量の水に加えた後、メチルイソブチルケトン120gを加えて抽出を行った。得られた有機層を、水洗を2回実施した後、600gのヘキサンに投入し再沈澱を行った。得られた沈澱物をろ取した後、60℃で一晩減圧乾燥することで、上記化合物(A-10)を得た。化合物(A-10)のMwは、1,500であった。
温度計、コンデンサー及びマグネチックスターラーを備えた500mL3口フラスコに、窒素雰囲気下、m-クレゾール250g、37質量%ホルマリン125g及び無水シュウ酸2gを加え、100℃で3時間、180℃で1時間反応させた後、減圧下にて未反応モノマーを除去し、下記式(a-1)で表される樹脂を得た。得られた樹脂(a-1)のMwは11,000、Mw/Mnは8.4であった。
レジスト下層膜形成用組成物の調製に用いた[B]溶媒、[C]酸発生剤及び[D]架橋剤について以下に示す。
B-1:酢酸プロピレングリコールモノメチルエーテル
C-1:ビス(4-t-ブチルフェニル)ヨードニウムノナフルオロ-n-ブタンスルホネート(下記式(C-1)で表される化合物)
D-1:1,3,4,6-テトラキス(メトキシメチル)グリコールウリル(下記式(D-1)で表される化合物)
[A]化合物としての(A-1)10質量部及び[C]酸発生剤としての(C-1)0.5質量部を[B]溶媒としての(B-1)90質量部に溶解した。得られた溶液を孔径0.1μmのメンブランフィルターでろ過して、レジスト下層膜形成用組成物(J-1)を調製した。
下記表1に示す種類及び含有量の各成分を使用した以外は実施例2-1と同様に操作して、レジスト下層膜形成用組成物(J-2)~(J-13)を調製した。表1中の「-」は、該当する成分を使用しなかったことを示す。
[実施例3-1~3-12及び比較例3-1]
上記調製したレジスト下層膜形成用組成物を、シリコンウエハ基板上に、スピンコート法により塗工した。次に、大気雰囲気下にて、下記表2に示す加熱温度(℃)及び加熱時間(sec)で加熱(焼成)し、平均厚み200nmのレジスト下層膜を形成して、基板上にレジスト下層膜が形成されたレジスト下層膜付き基板を得た。表2中の「-」は、比較例3-1がエッチング耐性の評価の基準であることを示す。
上記得られたレジスト下層膜形成用組成物及び上記得られたレジスト下層膜付き基板を用い、下記項目について下記方法で評価を行った。評価結果を下記表2に示す。
上記基板上にレジスト下層膜が形成されたレジスト下層膜付き基板について、中心から円周方向に向かう筋状の欠陥(ストリエーション)の有無を目視にて観察した。塗工性は、筋状の欠陥(ストリエーション)がない場合には「A」(良好)、欠陥があった場合には「B」(不良)と評価した。
上記得られたレジスト下層膜付き基板におけるレジスト下層膜を、エッチング装置(東京エレクトロン社の「TACTRAS」)を用いて、CF4/Ar=110/440sccm、PRESS.=30MT、HF RF(プラズマ生成用高周波電力)=500W、LF RF(バイアス用高周波電力)=3000W、DCS=-150V、RDC(ガスセンタ流量比)=50%、30secの条件にて処理し、処理前後のレジスト下層膜の平均厚みからエッチング速度(nm/分)を算出し、比較例3-1に対する比率を算出し、エッチング耐性の尺度とした。エッチング耐性は、上記比率が0.95以上0.98未満の場合は「A」(極めて良好)と、0.98以上1.00未満の場合は「B」(良好)と、1.00以上の場合は「C」(不良)と評価した。
上記調製したレジスト下層膜形成用組成物を、図1に示すように、深さ100nm、幅10μmのトレンチパターンが形成されたシリコン基板1上に、スピンコーター(東京エレクトロン社の「CLEAN TRACK ACT12」)を用い、スピンコート法により塗工した。スピンコートの回転速度は、上記「レジスト下層膜の形成」において、平均厚み200nmのレジスト下層膜を形成する場合と同じとした。次いで、大気雰囲気下にて、250℃で60秒間焼成(ベーク)し、非トレンチパターンの部分における平均厚みが200nmの膜2を形成し、上記シリコン基板が膜で被覆された膜付きシリコン基板を得た。
上記調製したレジスト下層膜形成用組成物を、直径8インチのシリコンウエハ上にスピンコート法により塗工し、大気雰囲気下にて、250℃で60秒間焼成(ベーク)してレジスト下層膜を形成し、レジスト下層膜付き基板を得た。次に、このレジスト下層膜付き基板のレジスト下層膜を削ることにより粉体を回収し、レジスト下層膜の粉体をTG-DTA装置(NETZSCH社の「TG-DTA2000SR」)による測定で使用する容器に入れ、加熱前の質量を測定した。次いで、上記TG-DTA装置を用いて、窒素雰囲気下、10℃/分の昇温速度にて400℃まで加熱し、400℃における粉体の質量を測定した。そして、下記式により質量減少率(%)を測定し、この質量減少率を耐熱性の尺度とした。
ML={(m1-m2)/m1}×100
ここで、上記式中、MLは、質量減少率(%)であり、m1は、加熱前の質量(mg)であり、m2は、400℃における質量(mg)である。
耐熱性は、試料となる粉体の質量減少率が小さいほど、レジスト下層膜の加熱時に発生する昇華物やレジスト下層膜の分解物が少なく、良好である。すなわち、質量減少率が小さいほど、高い耐熱性であることを示す。耐熱性は、質量減少率が5%未満の場合は「A」(極めて良好)と、5%以上10%未満の場合は「B」(良好)と、10%以上の場合は「C」(不良)と評価した。
2 膜
Claims (11)
- 下記式(1)で表される基を有する化合物と、
溶媒と
を含有するレジスト下層膜形成用組成物。
- 上記化合物の酸素原子含有量が4質量%以上である請求項1に記載のレジスト下層膜形成用組成物。
- 上記式(1)のR1の有機基におけるヒドロキシ基及びアルコキシ基が結合する炭素原子に水素原子が結合していない請求項1又は請求項2に記載のレジスト下層膜形成用組成物。
- 上記化合物が芳香環を有する請求項1、請求項2又は請求項3に記載のレジスト下層膜形成用組成物。
- 酸発生剤をさらに含有する請求項1から請求項4のいずれか1項に記載のレジスト下層膜形成用組成物。
- 上記化合物の含有量が、1質量%以上50質量%以下である請求項1から請求項6のいずれか1項に記載のレジスト下層膜形成用組成物。
- 請求項1から請求項7のいずれか1項に記載のレジスト下層膜形成用組成物から形成されるレジスト下層膜。
- 請求項1から請求項7のいずれか1項に記載のレジスト下層膜形成用組成物を基板の一方の面側に塗工する工程と、
上記塗工工程により得られる塗工膜を加熱する工程と
を備えるレジスト下層膜の形成方法。 - 請求項9に記載のレジスト下層膜の形成方法により得られるレジスト下層膜の上記基板とは反対の面側にレジストパターンを形成する工程と、
上記レジストパターンをマスクとしたエッチングを行う工程と
を備えるパターニングされた基板の製造方法。
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Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2014038680A1 (ja) * | 2012-09-10 | 2014-03-13 | Jsr株式会社 | レジスト下層膜形成用組成物及びパターン形成方法 |
WO2015122296A1 (ja) * | 2014-02-12 | 2015-08-20 | 日産化学工業株式会社 | フッ素含有界面活性剤を含む膜形成組成物 |
JP2017151389A (ja) * | 2016-02-26 | 2017-08-31 | Hoya株式会社 | マスクブランク、レジスト膜付きマスクブランク、レジストパターン付きマスクブランク、およびそれらの製造方法、ならびに転写用マスクの製造方法 |
WO2017154921A1 (ja) * | 2016-03-10 | 2017-09-14 | 日産化学工業株式会社 | 炭素原子間の不飽和結合による光架橋基を有する化合物を含む段差基板被覆組成物 |
Family Cites Families (9)
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JPH082821B2 (ja) | 1992-08-14 | 1996-01-17 | 工業技術院長 | 1,4,5,8−テトラキス(ヒドロキシメチル)ナフタレン誘導体およびその製造方法 |
JP3914493B2 (ja) | 2002-11-27 | 2007-05-16 | 東京応化工業株式会社 | 多層レジストプロセス用下層膜形成材料およびこれを用いた配線形成方法 |
KR100678647B1 (ko) * | 2006-01-23 | 2007-02-06 | 삼성전자주식회사 | 포토레지스트용 감광성 고분자 및 이를 포함하는포토레지스트 조성물 |
KR101344794B1 (ko) * | 2009-12-31 | 2014-01-16 | 제일모직주식회사 | 레지스트 하층막용 방향족 고리 함유 중합체 및 이를 포함하는 레지스트 하층막 조성물 |
JP6060967B2 (ja) * | 2012-03-06 | 2017-01-18 | Jsr株式会社 | フォトレジスト組成物及びレジストパターン形成方法 |
JP5894106B2 (ja) * | 2012-06-18 | 2016-03-23 | 信越化学工業株式会社 | レジスト下層膜形成用化合物、これを用いたレジスト下層膜材料、レジスト下層膜形成方法、パターン形成方法 |
CN104379617A (zh) * | 2012-06-29 | 2015-02-25 | 株式会社大赛璐 | 高分子化合物、光致抗蚀剂用树脂组合物、及半导体的制造方法 |
JP6244109B2 (ja) * | 2013-05-31 | 2017-12-06 | 東京応化工業株式会社 | レジスト組成物、化合物、高分子化合物及びレジストパターン形成方法 |
JP6249664B2 (ja) * | 2013-07-31 | 2017-12-20 | 東京応化工業株式会社 | レジスト組成物、酸発生剤、及びレジストパターン形成方法 |
-
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Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2014038680A1 (ja) * | 2012-09-10 | 2014-03-13 | Jsr株式会社 | レジスト下層膜形成用組成物及びパターン形成方法 |
WO2015122296A1 (ja) * | 2014-02-12 | 2015-08-20 | 日産化学工業株式会社 | フッ素含有界面活性剤を含む膜形成組成物 |
JP2017151389A (ja) * | 2016-02-26 | 2017-08-31 | Hoya株式会社 | マスクブランク、レジスト膜付きマスクブランク、レジストパターン付きマスクブランク、およびそれらの製造方法、ならびに転写用マスクの製造方法 |
WO2017154921A1 (ja) * | 2016-03-10 | 2017-09-14 | 日産化学工業株式会社 | 炭素原子間の不飽和結合による光架橋基を有する化合物を含む段差基板被覆組成物 |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2020029558A (ja) * | 2018-08-21 | 2020-02-27 | 三星エスディアイ株式会社Samsung SDI Co., Ltd. | 重合体、有機膜組成物、およびパターン形成方法 |
WO2021256527A1 (ja) * | 2020-06-19 | 2021-12-23 | 日産化学株式会社 | ジアリールメタン誘導体を用いたレジスト下層膜形成組成物 |
JP2023043170A (ja) * | 2021-09-15 | 2023-03-28 | 三星エスディアイ株式会社 | ハードマスク組成物、ハードマスク層およびパターン形成方法 |
JP7428766B2 (ja) | 2021-09-15 | 2024-02-06 | 三星エスディアイ株式会社 | ハードマスク組成物、ハードマスク層およびパターン形成方法 |
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TWI754683B (zh) | 2022-02-11 |
TW201818151A (zh) | 2018-05-16 |
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