Classifications

• • C—CHEMISTRY; METALLURGY
  • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
  • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
  • C08F212/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an aromatic carbocyclic ring
  • C08F212/02—Monomers containing only one unsaturated aliphatic radical
  • C08F212/04—Monomers containing only one unsaturated aliphatic radical containing one ring
  • C08F212/06—Hydrocarbons
  • C08F212/08—Styrene
• • C—CHEMISTRY; METALLURGY
  • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
  • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
  • C08F212/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an aromatic carbocyclic ring
  • C08F212/02—Monomers containing only one unsaturated aliphatic radical
  • C08F212/04—Monomers containing only one unsaturated aliphatic radical containing one ring
  • C08F212/06—Hydrocarbons
  • C08F212/12—Monomers containing a branched unsaturated aliphatic radical or a ring substituted by an alkyl radical
• • G—PHYSICS
  • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
  • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
  • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
  • G03F7/004—Photosensitive materials
  • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
• • G—PHYSICS
  • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
  • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
  • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
  • G03F7/004—Photosensitive materials
  • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
  • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
• • G—PHYSICS
  • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
  • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
  • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
  • G03F7/16—Coating processes; Apparatus therefor
  • G03F7/162—Coating on a rotating support, e.g. using a whirler or a spinner
• • G—PHYSICS
  • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
  • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
  • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
  • G03F7/16—Coating processes; Apparatus therefor
  • G03F7/168—Finishing the coated layer, e.g. drying, baking, soaking
• • G—PHYSICS
  • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
  • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
  • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
  • G03F7/20—Exposure; Apparatus therefor
  • G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
  • G03F7/2004—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light
• • G—PHYSICS
  • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
  • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
  • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
  • G03F7/26—Processing photosensitive materials; Apparatus therefor
• • G—PHYSICS
  • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
  • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
  • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
  • G03F7/26—Processing photosensitive materials; Apparatus therefor
  • G03F7/30—Imagewise removal using liquid means
  • G03F7/32—Liquid compositions therefor, e.g. developers
  • G03F7/322—Aqueous alkaline compositions
• • G—PHYSICS
  • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
  • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
  • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
  • G03F7/26—Processing photosensitive materials; Apparatus therefor
  • G03F7/38—Treatment before imagewise removal, e.g. prebaking
• • G—PHYSICS
  • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
  • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
  • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
  • G03F7/26—Processing photosensitive materials; Apparatus therefor
  • G03F7/40—Treatment after imagewise removal, e.g. baking
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
  • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
  • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
  • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
  • H01L21/0274—Photolithographic processes

Definitions

• the present invention relates to a chemically amplified positive photoresist composition, more specifically suitable for forming a thick film appropriately used in producing a semiconductor device, a flat panel display (FPD), a circuit board, and a magnetic head, in particular, in forming the magnetic pole of a magnetic head and the protuberance electrode called "bump" for use as a connecting terminal in a large-scale integrated circuit (LSI).
• LSI large-scale integrated circuit
• Photolithographic technology has been used in forming microelements or carrying out a fine processing in a variety of fields, for example, in production of semiconductor integrated circuits such as LSIs, display screens of FPDs, circuit boards for thermal heads, and others.
• semiconductor integrated circuits such as LSIs, display screens of FPDs, circuit boards for thermal heads, and others.
• a photoresist film works as a mask for ion beam when the silicon substrate is processed for etching and/or ion implantation.
• a thicker photoresist film shows better shielding effect.
• a certain value of viscosity is needed for a photoresist composition in order to form a thick film.
• a demand for low viscosity photoresist composition used for a thick film formation is increasing.
• a thick photoresist film formed from a high viscosity composition has problems on large variation and plane uniformity on film thickness.
• a high viscosity photoresist composition also has problems on handling due to a certain amount of waste composition and difficulty in adjusting a coating condition.
• an equipment modification on piping, pump and nozzle is necessary to use a high viscosity photoresist composition in a mass production coater.
• a positive photoresist composition comprising a novolak resin and a naphthoquinonediazide-containing compound is known to form a film thickness of several tens of micrometer (Japanese Patent Application Laid Open (JP-A) No. 2004- 198915) .
• the composition has an issue on tapered profile of sidewall due to an insufficient sensitivity.
• a chemically amplified positive photoresist composition for thick-film resist film formation comprising a mixture of organic solvent is known to be capable of reducing viscosity (Japanese Patent Application Laid Open (JP-A) No. 2007-248727) .
• film thickness derived from the composition comprising a mixture of organic solvent is not sufficient.
• a chemically amplified positive photoresist composition comprising a base resin and an acid generator in a solvent, the base resin contains both an alkali-insoluble or substantially al kali-insoluble polymer having an acid labile group-protected acidic functional group and an alkyl vinyl ether polymer is disclosed in US 2012/0184101 Al .
• film properties derived from the composition depend on a post exposure delay time. For a photolithographic process stability, it has been required to improve process margin.
• An object of the invention is to provide a chemically amplified positive photoresist composition with low viscosity useful for a thick film photoresist material subject to a subsequent pattern forming process, which forms a pattern with advantages including a high sensitivity, high resolution, vertical profile, and short development time, and in which the pattern exhibits crack resistance and is free of deformation during or after the pattern forming process.
• the invention provides a chemically amplified positive photoresist composition
• a chemically amplified positive photoresist composition comprising (A) an alkali-soluble resin, (B) at least one plasticizer selected from a group consisting of an alkali-soluble vinyl resin and an acid-dissociable group containing vinyl resin, (C) an acid generator, and (D) an organic solvent.
• the alkali- soluble resin (A) selected from a group consisting of a block copolymer, a random copolymer and those combination, comprising a polymer comprising recurring units represented by a following general formula (1), a following general formula (2) and a following general formula (3) and having a weight average molecular weight of 1,000 to 200,000.
• the alkali-soluble vinyl resin and the acid- dissociable group containing vinyl resin (B) has a weight average molecular weight of 500 to 200,000. In one embodiment of the invention, the component (B) is included in an amount of 2 - 10 parts by mass per 100 parts by mass of the component (A).
• Rl is hydrogen, alkyl or halogen
• R2 is hydrogen or al kyl
• R3 is C4-C12 tertiary alkyl
• m is a positive integer of 1 to 5.
• the alkali- soluble resin (A) comprises 5 to 80mass% of the recurring units represented by the above general formula ( 1), 1 to
• the polymer comprising recurring units represented by the above general formula ( 1), the above general formula (2) and the above general formula (3) included in the alkali-soluble resin (A) is a polymer comprising recurring units represented by a following formula (4), a following formula (5) and a following formula (6) and having a weight average molecular weight of 4,000 to 200,000.
• the chemically amplified positive photoresist composition may further comprise (E) a basic compound optionally.
• the organic solvent of the chemically amplified positive photoresist composition comprises a solvent with viscosity less than 1.0 mPa-s at 25° C, in one embodiment of the invention.
• the invention provides a method for forming a resist pattern, comprising ;
• the wavelength of UV radiation is 248 nm.
• the invention provides a method for forming a semiconductor device manufacturing method comprising a method for forming a resist pattern from the chemically amplified positive resist composition.
• the chemically amplified positive resist composition of the invention having viscosity of less than 100 mPa-s, is coated onto a substrate to form a relatively thick resist film of 2 to 20 pm thick with excellent plane uniformity, which can be developed to form a pattern at high sensitivity, high resolution, vertical profile, and short development time, and in which the pattern exhibits crack resistance and is free of deformation during or after the pattern forming process.
• Ci-6 al kyl refers to an al kyl chain having a chain of between 1 and 6 carbons (e.g. , methyl, ethyl, propyl, butyl, pentyl and hexyl) .
• One embodiment of the invention is a chemically amplified positive photoresist composition
• a chemically amplified positive photoresist composition comprising (A) an alkali-soluble resin, (B) at least one plasticizer selected from a group consisting of an al kali-soluble vinyl resin and an acid-dissociable group containing vinyl resin, (C) an acid generator, and (D) an organic solvent.
• the alkali- soluble resin (A) selected from a group consisting of a block copolymer, a random copolymer and those combination, comprising a polymer comprising recurring units represented by a following general formula ( 1), a following general formula (2) and a following general formula (3) and having a weight average molecular weight of 1,000 to 200,000.
• the alkali-soluble vinyl resin and the acid-dissociable group containing vinyl resin (B) has a weight average molecular weight of 500 to 200,000.
• the component (B) is included in an amount of 2 - 10 parts by mass per 100 parts by mass of the component (A) .
• Rl is hydrogen, alkyl or halogen
• R2 is hydrogen or al kyl
• R3 is C4-C12 tertiary alkyl
• m is a positive integer of 1 to 5.
• the al kyl groups represented by Rl and R2 are typically those of 1 to 6 carbon atoms, preferably 1 to 4 carbon atoms, for example, methyl, ethyl, propyl, isopropyl, n-butyl, isobutyl, and tert-butyl .
• Rl may be halogen. Exemplary halogens are fluorine, chlorine and bromine.
• R3 include tert-butyl, tert-amyl, tert-hexyl, tert-heptyl, tert-octyl, tert-nonyl, tert-decyl, tert-undecyl, and tert- dodecyl .
• the al kali-soluble resin (A) comprises 5 to 80mass% preferably 5 to 75mass% of the recurring units represented by the above general formula ( 1), 1 to 35mass% preferably 1 to 30mass% of the recurring units represented by the above general formula (2), 5 to 55mass% preferably 5 to 50mass% of the recurring units represented by the above general formula (3), based on mass of the alkali-soluble resin (A) .
• the unexposed area of a photoresist film may have too large alkali dissolution rate. If the recurring units represented by the above general formula (2) exceeds 35wt%, the exposed area of a photoresist film may have too small al kali dissolution rate and result in deterioration of resolution. If the recurring units represented by the above general formula (3) exceeds 55wt%, a photoresist film may show low dry etching resistance.
• the al kali-soluble resin (A) should have a weight average molecular weight (Mw) of 1,000 to 200,000, preferably 2,000 to 200,000, determined by gel permeation chromatography (GPC) using GPC columns and under analysis conditions involving a flow rate of l .OmL/min, an elution solvent of tetrahydrofuran and a column temperature of 40° C using mono-dispersed polystyrene as a standard.
• Mw weight average molecular weight
• GPC gel permeation chromatography
• the polymer comprising recurring units of the general formula ( 1), the general formula (2) and the general formula (3) is preferably a polymer comprising recurring units represented by a formula (4), a formula (5) and a formula (6) and having a Mw of 4,000 to 200,000.
• the al kali-soluble resin (A) comprising a polymer comprising recurring units represented by the general formula ( 1), the general formula (2) and the general formula (3) may be synthesized by any desired method, for example, by dissolving a hydroxystyrene, acrylic acid tertiary ester, and styrene monomers in an organic solvent, adding a radical initiator thereto, and effecting heat polymerization.
• organic solvent which can be used for polymerization include toluene, benzene, tetrahydrofuran, diethyl ether and dioxane.
• polymerization initiator examples include 2,2'-azobisisobutyronitrile (AIBN), 2,2'-azobis (2,4-dimethylvaleronitrile), dimethyl 2,2'-azobis (2- methylpropionate), benzoyl peroxide, and lauroyl peroxide.
• AIBN 2,2'-azobisisobutyronitrile
• 2,2'-azobis (2,4-dimethylvaleronitrile) dimethyl 2,2'-azobis (2- methylpropionate
• benzoyl peroxide preferably 2-methylpropionate
• lauroyl peroxide Preferably the system is heated at 50 to 80°C for polymerization to take place.
• the reaction time is 2 to 100 hours, preferably 5 to 20 hours.
• the synthesis method of the polymer is not limited to the foregoing.
• An alkali-soluble vinyl resin and an acid-dissociable group containing vinyl resin used as the plasticizer (B) can be obtained from a vinyl based compound.
• examples of such polymer include polyvinyl chloride, polystyrene, polyhydroxystyrene, polyvinyl acetate, polyvinyl benzoate, polyvinyl ether, polyvinyl butyral, polyvinyl alcohol, polyether ester, polyvinylpyrrolidone, polyacrylic acid, polymethacrylic acid, polyacrylic acid esters, polyimide maleate, polyacrylamide, polyacrylonitrile, polyvinylphenol and copolymers thereof, and the like.
• polyvinyl ether polyvinyl butyral and polyether ester are particularly preferred since these resins contain flexible ether bonds in the molecule.
• the component (B) is preferably included in an amount of no less than 2 parts by mass per 100 parts by mass of the component (A). In particular, it is preferred that from 2 to 10 parts by mass of the component (B) per 100 parts by mass of the component (A) be included.
• PAG is typically used. It is any compound capable of generating an acid upon exposure to high-energy radiation. Suitable PAGs include sulfonium salt, iodonium salt, sulfonyldiazomethane, and N-sulfonyloxyimide acid generators. Exemplary acid generators are given below while they may be used alone or in admixture of two or more.
• Sulfonium salts are salts of sulfonium cations with anions including sulfonates and imides.
• Exemplary sulfonium cations include triphenylsulfonium, (4- methy I phenyl )diphenylsulfonium, (4- methoxyphenyl)diphenylsulfonium, tris(4- methoxyphenyl)sulfonium, (4-tert- buthy I phenyl )diphenylsulfonium, (4-tert- butoxyphenyl)diphenylsulfonium, bis(4-tert- butoxyphenyl)phenylsulfonium, tris(4-tert- buthy I phenyl )sulfonium, tris(4-tert- butoxyphenyl)sulfonium, tris(4-methyl phenyl )sulfonium, (4-methoxy-3,
• sulfonates include trifluoromethanesulfonate, nonafluorobutanesulfonate,
• heptadecafluorooctanesulfonate 2,2,2- trifluoroethanesulfonate, pentafluorobenzenesulfonate, 4-(trifluoromethyl)benzenesulfonate, 4- fluorobenzenesulfonate, toluenesulfonate, benzenesulfonate, 4-(4- toluenesulfonyloxy)benzenesulfonate,
• exemplary imides include bis (perfluoromethanesulfonyl)imide, bis(perfluoroethanesulfonyl)imide,
• bis(perfluorobutanesulfonyl) imide bis(perfluorobutanesulfonyloxy)imide, bis[perfluoro(2- ethoxyethane)sulfonyl]imide, and N, N- hexafluoropropane-l,3-disulfonylimide.
• Exemplary other anions include 3-oxo-3H-l,2-benzothiazol-2-ide 1,1- dioxide, tris[(trifluoromethyl)sulfonyl]methaneide and tris[(perfluorobuthyl)sulfonyl]methaneide.
• Anion containing fluorocarbon is preferable. Sulfonium salts based on combination of the foregoing examples are included.
• Iodonium salts are salts of iodonium cations with anions including sulfonates and imides.
• Exemplary iodonium cations include aryl iodonium cations such as di phenyl iodonium, bis(4-tert-butyl phenyl) iodonium, bis(4-tert-pentyl phenyl) iodonium, 4-tert- butoxyphenylphenyliodonium, and 4- methoxyphenylphenyliodonium.
• Exemplary sulfonates include trifluoromethanesulfonate, nonafluorobutanesulfonate,
• heptadecafluorooctanesulfonate 2,2,2- trifluoroethanesulfonate, pentafluorobenzenesulfonate, 4-(trifluoromethyl)benzenesulfonate, 4- fluorobenzenesulfonate, toluenesulfonate, benzenesulfonate, 4-(4- toluenesulfonyloxy)benzenesulfonate,
• exemplary imides include bis(perfluoromethanesulfonyl)imide, bis(perfluoroethanesulfonyl)imide,
• Exemplary sulfonyldiazomethane compounds include bissulfonyldiazomethane compounds and sulfonyl- carbonyldiazomethane compounds such as bis(ethylsulfonyl)diazomethane, bis(l- methylpropylsulfonyl)diazomethane, bis(2- methylpropylsulfonyl)diazomethane, bis(l,l- dimethylethylsulfonyl)diazomethane,
• N-sulfonyloxyimide photoacid generators include combinations of imide skeletons with sulfonates.
• Exemplary imide skeletons are succinimide, naphthalene dicarboxylic acid imide, phthalimide, cyclohexyldicarboxylic acid imide, 5-norbornene-2,3- dicarboxylic acid imide, and 7-oxabicyclo[2.2. l]-5- heptene-2,3-dicarboxylic acid imide.
• Exemplary sulfonates include trifluoromethanesulfonate, nonafluorobutanesulfonate,
• heptadecafluorooctanesulfonate 2,2,2- trifluoroethanesulfonate, pentafluorobenzenesulfonate, 4-trifluoromethylbenzenesulfonate, 4- fluorobenzenesulfonate, toluenesulfonate, benzenesulfonate, naphtha lenesulfonate, camphorsulfonate, octanesulfonate, dodecylbenzenesulfonate, butanesulfonate, and methanesulfonate.
• Benzoinsulfonate photoacid generators include benzoin tosylate, benzoin mesylate, and benzoin butanesulfonate.
• Pyrogallol trisulfonate photoacid generators include pyrogallol, phloroglucinol, catechol, resorcinol, and hydroquinone, in which all hydroxyl groups are substituted by trifluoromethanesulfonate, nonafluorobutanesulfonate,
• heptadecafluorooctanesulfonate 2,2,2- trifluoroethanesulfonate, pentafluorobenzenesulfonate, 4-trifluoromethy I benzenesulfonate, 4- fluorobenzenesulfonate, toluenesulfonate, benzenesulfonate, naphthalenesulfonate, camphorsulfonate, octanesulfonate, dodecylbenzenesulfonate, butanesulfonate, or methanesulfonate.
• Nitrobenzyl sulfonate photoacid generators include
• heptadecafluorooctanesulfonate 2,2,2- trifluoroethanesulfonate, pentafluorobenzenesulfonate, 4-trifluoromethylbenzenesulfonate, 4- fluorobenzenesulfonate, toluenesulfonate, benzenesulfonate, naphtha lenesulfonate, camphorsulfonate, octanesulfonate, dodecylbenzenesulfonate, butanesulfonate, and methanesulfonate.
• analogous nitrobenzyl sulfonate compounds in which the nitro group on the benzyl side is substituted by trifluoromethyl.
• Sulfone photoacid generators include bis(phenylsulfonyl) methane, bis(4- methylphenylsulfonyl)methane, bis(2- naphthylsulfonyl)methane, 2,2- bis(phenylsulfony I) propane, 2,2-bis(4- methylphenylsulfony I) propane, 2,2-bis(2- naphthylsulfonyl) propane, 2-methyl-2-(p- toluenesulfonyl)propiophenone, 2-cyclohexylcarbonyl-2-
• Photoacid generators in the form of glyoxime derivatives include bis-O-(p-toluenesulfonyl)-a- dimethylglyoxime, bis-O-(p-toluenesulfonyl)-a- diphenylglyoxime, bis-O-(p-toluenesulfonyl)-a- dicyclohexylglyoxime, bis-O-(p-toluenesulfonyl)-2,3- pentanedioneglyoxime, bis-O-(p-toluenesulfonyl)-2- methyl-3,4-pentanedioneglyoxime, bis-O-(n- butanesulfonyl)-a-dimethylglyoxime, bis-O-(n- butanesulfonyl)-a-diphenylglyoxime, bis-O-(n- butanesulfony
• the preferred PAGs are sulfonium salts, iodonium salts, and N-sulfonyloxyimides.
• an anion which is non-volatile and not extremely highly diffusive is generally selected .
• Appropriate anions include anions of benzenesulfonic acid, toluenesulfonic acid, 4-(4- toluenesulfonyloxy) benzenesulfonic acid, pentafluorobenzenesulfonic acid, 2,2,2- trifluoroethanesulfonic acid, nonafluorobutanesulfonic acid, heptadecafluorooctanesulfonic acid, camphorsulfonic acid, disulfonic acid, sulfonyl imide, and sulfonyl methaneide.
• the photoacid generator (C) is added to the chemically amplified positive resist composition in an amount of 0.5 to 20 parts, preferably 1 to 10 parts by mass of the component (A) .
• the PAG may be used alone or in admixture of two or more.
• Examples of the organic solvent of the chemically amplified positive photoresist composition include ethylene glycol monoalkylethers such as ethylene glycol monomethylether and ethylene glycol monoethylether; ethylene glycol monoalkylether acetates such as ethylene glycol monomethylether acetate and ethylene glycol monoethylether acetate; propylene glycol monoalkylethers such as propylene glycol monomethylether (PGME) and propylene glycol monoethylether; propylene glycol monoalkylether acetates such as propylene glycol monomethylether acetate and propylene glycol monoethylether acetate; propylene glycol dialkyl ethers such as propylene glycol dimethyl ether (PGDME), propylene glycol diethyl ether, propylene glycol dipropyl ether, propylene glycol dibutyl ether; lactic acid esters such as methyl lactate, ethyl
• At least one of the organic solvent of the chemically amplified positive photoresist composition has viscosity less than 1.0 mPa-s at 25° C.
• organic solvent with viscosity less than 1.0 mPa-s at 25° C include ketone solvents such as acetone, methylethylketone, methylisobutylketone, methyl-n-butylketone, methyl-n- pentylketone, diisobutylketone ; ether solvents such as diethylether, cyclopentyl methyl ether, dibutyl ether ; aliphatic hydrocarbon solvents such as pentane, hexane, heptane, octane ; cycloaliphatic hydrocarbon solvents such as cyclohexane, methylcyclohexane ; aromatic hydrocarbon solvents such as ; benzene, toluene, xylene ; ester solvents such
• Preferable combination of the organic solvents are propylene glycol monomethylether and propylene glycol dimethyl ether, propylene glycol monomethylether and methylisobutylketone, propylene glycol monomethylether and methylethylketone, propylene glycol monomethylether and n-butyl acetate, propylene glycol monomethylether and cyclopentyl methyl ether, propylene glycol monomethylether and propyl propionate.
• An amount of the organic solvent used is desirably 1 to 20 times, more desirably 1 to 15 times the amount of total solids on a weight basis.
• Examples of basic compounds (E) include primary, secondary, and tertiary aliphatic amines, mixed amines, aromatic amines, heterocyclic amines, nitrogen- containing compounds having carboxyl group, nitrogen- containing compounds having sulfonyl group, nitrogen- containing compounds having hydroxyl group, nitrogen- containing compounds having hydroxyphenyl group, alcoholic nitrogen-containing compounds, amide derivatives, and imide derivatives.
• Suitable primary aliphatic amines include ammonia, methylamine, ethylamine, n- propylamine, isopropylamine, n-butylamine, isobutylamine, sec-butylamine, tert-butylamine, pentylamine, tert-amylamine, cyclopentylamine, hexylamine, cyclohexylamine, heptylamine, octylamine, nonylamine, decylamine, dodecylamine, cetylamine, methylenediamine, ethylenediamine, and tetraethylenepentamine.
• Suitable secondary aliphatic amines include dimethylamine, diethylamine, di- n-propylamine, diisopropylamine, di-n-butylamine, diisobutylamine, di-sec-butylamine, dipentylamine, dicyclopentylamine, dihexylamine, dicyclohexylamine, diheptylamine, dioctylamine, dinonylamine, didecylamine, didodecylamine, dicetylamine, N,N- dimethylmethylenediamine, N,N- dimethylethylenediamine, and N,N- dimethyltetraethylenepentamine.
• Suitable tertiary amines include trimethylamine, triethylamine, tri - n-propylamine, triisopropylamine, tri-n-butylamine, triisobutylamine, tri-sec-butylamine, tripentylamine, tricyclopentylamine, trihexylamine, tricyclohexylamine, triheptylamine, trioctylamine, trinonylamine, tridecylamine, tridodecylamine, tricetylamine, ⁇ , ⁇ , ⁇ ', ⁇ '- tetramethylmethylenediamine, ⁇ , ⁇ , ⁇ ', ⁇ '- tetramethylethylenediamine, ⁇ , ⁇ , ⁇ ', ⁇ '- tetramethyltetraethylenepentamine, Tris[2-
• (isopropylamino)ethyl]amine N,N-diisopropyl-N- methylamine, ⁇ , ⁇ , ⁇ , ⁇ , ⁇ -Pentamethyldiethylenetriamine, 1, 1,4,7, 10, 10-Hexamethyltriethylenetetra mine, tris-(2- (3-methyl-butoxy) -ethyl) -amine, tris-(2-hexyloxy-ethyl)- amine, l,4-diazabicyclo[2.2.2]octane, and tris[2-(2- methoxyethoxy)ethyl]amine.
• suitable mixed amines include dimethylethylamine, methylethy I propylamine, diisopropyl methylamine, N-ethyl-N-isopropyl-2- propanamine, N-methyldicyclohexylamine, benzylamine, phenethylamine, and benzyldimethylamine.
• suitable aromatic and heterocyclic amines include aniline derivatives (e.g.
• aniline N-methylaniline, N-ethylaniline, N-propylaniline, ⁇ , ⁇ -dimethylaniline, 2-methylaniline, 3- methylaniline, 4-methylaniline, ethylaniline, propylaniline, trimethylaniline, 2-nitroaniline, 3- nitroaniline, 4-nitroaniline, 2,4-dinitroaniline, 2,6- dinitroaniline, 3,5-dinitroaniline, and N,N- dimethyltoluidine), di phenyl (p-toly I )amine, methyldiphenylamine, triphenylamine, phenylenediamine, tris-(2-phenoxy-ethyl) -amine, naphthylamine, diaminonaphthalene, pyrrole derivatives (e.g.
• pyrrole 2H-pyrrole, 1-methylpyrrole, 2,4- dimethylpyrrole, 2,5-dimethylpyrrole, and N- methylpyrrole
• oxazole derivatives e.g. , oxazole and isooxazole
• thiazole derivatives e.g., thiazole and isothiazole
• imidazole derivatives e.g. , imidazole, 4- methylimidazole, and 4-methyl-2-phenylimidazole
• pyrazole derivatives furazan derivatives
• pyrroline derivatives e.g., pyrroline and 2-methyl- l-pyrroline
• pyrrolidine derivatives e.g.
• pyrrolidine N- methylpyrrolidine, pyrrolidinone, and N- methylpyrrolidone
• imidazoline derivatives imidazolidine derivatives
• pyridine derivatives e.g. , pyridine, methylpyridine, ethylpyridine, propylpyridine, butyl pyridine, 4-( l-butylpentyl)pyridine, dimethylpyridine, trimethylpyridine, triethylpyridine, phenylpyridine, 3-methyl-2-phenylpyridine, 4-tert- butylpyridine, diphenylpyridine, benzylpyridine, methoxypyridine, butoxypyridine, dimethoxypyridine, 1- methyl-2-pyridine, 4-pyrrolidinopyridine, l-methyl-4- pheny I pyridine, 2- ( 1-ethylpropy I) pyridine, aminopyridine, and dimethylaminopyridine), pyridazine derivatives, pyrim
• suitable nitrogen-containing compounds having carboxyl group include aminobenzoic acid, indolecarboxylic acid, and amino acid derivatives (e.g . nicotinic acid, alanine, alginine, aspartic acid, glutamic acid, glycine, histidine, isoleucine, glycylleucine, leucine, methionine, phenylalanine, threonine, lysine, 3- aminopyrazine-2-carboxylic acid, and methoxyalanine) .
• suitable nitrogen-containing compounds having sulfonyl group include 3-pyridinesulfonic acid and pyridinium p-toluenesulfonate.
• nitrogen-containing compounds having hydroxyl group nitrogen-containing compounds having hydroxyphenyl group, and alcoholic nitrogen-containing compounds
• Suitable amide derivatives include formamide, N- methylformamide, ⁇ , ⁇ -dimethylformamide, acetamide, N-methylacetamide, N,N-dimethylacetamide, propionamide, and benzamide.
• Suitable imide derivatives include phthalimide, succinimide, and maleimide.
• the basic compounds may be used alone or in admixture of two or more.
• the basic compound (E) is preferably formulated in an amount of 0 to 2 parts, and more preferably 0.01 to 1 part by mass per 100 parts by mass of the component (A) . More than 2 parts of the basic compound may result in too low on sensitivity.
• the chemically amplified positive resist composition according to the present invention may further contain, if desired, other additives such as dyes, leveling agents, adhesive aids and surfactants.
• the surfactant include nonionic surfactants, for example, polyoxyethylene alkyl ethers such as polyoxyethylene lauryl ether, polyoxyethylene stearyl ether, polyoxyethylene cetyl ether, and polyoxyethylene oleyl ether, polyoxyethylene al kylaryl ethers such as polyoxyethylene octylphenol ether and polyoxyethylene nonylphenol ether, polyoxyethylene polyoxypropylene block copolymers, sorbitan fatty acid esters such as sorbitan monolaurate, sorbitan monopalmitate, and sorbitan monostearate, and polyoxyethylene sorbitan fatty acid esters such as polyoxyethylene sorbitan monolaurate, polyoxyethylene sorbitan monopalmitate, polyoxyethylene sorbitan monostearate, polyoxyethylene sorb
• KP341, X-70-092, X-70-093, and KF-53 (Shin-Etsu Chemical Co., Ltd.), acrylic acid or methacrylic acid Polyflow No. 75 and No. 95 (Kyoeisha Ushi Kagaku Kogyo Co., Ltd.).
• FC-430, Surflon S-381, Surfynol E1004, KH-20 and F-563 are preferred. These surfactants may be used alone or in admixture.
• the surfactant is formulated in an amount of up to 2 parts, and preferably up to 1 part by mass per 100 parts by mass of the component (A).
• a chemically amplified positive photoresist composition was prepared by selecting a polymer as base resin, an acid generator, a basic compound, and a surfactant in accordance with the formulation shown in Table 1, dissolving them in organic solvents, and filtering through a membrane having a pore size of 0.05pm.
• the chemically amplified positive photoresist composition was spin coated on an 8-inch silicon wafer (Mark-8, Tokyo Electron Ltd.) and prebaked at 150°C for 180 seconds to remove the solvent to form a chemically amplified positive photoresist film with 9pm in film thickness. Results on crack resistance test are shown in Table 2.
• the photoresist film with 7.5pm in film thickness was formed by dispensing the chemically amplified positive photoresist composition to an 8 inch silicon wafer (Mark-8, Tokyo Electron Ltd .) and prebaked at 150°C for 180 seconds to remove the solvent.
• the photoresist film was baked (PEB) at 110° C for 180 seconds and developed with a 2.38 wt % tetramethylammonium hydroxide aqueous solution (AZ300MIF Developer) .
• a chemically amplified positive photoresist composition was prepared as in Examples aside from using a different polymer or a different formulation shown in Table 1, dissolving them in organic solvents, and filtering through a membrane having a pore size of 0.05pm.
• the chemically amplified positive photoresist composition was spin coated on an 8-inch silicon wafer (Mark-8, Tokyo Electron Ltd.) and prebaked at 150°C for 180 seconds to remove the solvent to form a chemically amplified positive photoresist film with 9pm in film thickness. Results on crack resistance test are shown in Table 2.
• a chemically amplified positive photoresist composition was prepared by selecting a polymer as base resin, an acid generator, a basic compound, and a surfactant in accordance with the formulation shown in Table 1, dissolving them in organic solvents, and filtering through a membrane having a pore size of 0.05pm. Viscosity of the composition was adjusted to 98mPa-s at 25°C.
• the chemically amplified positive photoresist composition was spin coated on an 8-inch silicon wafer (Mark-8, Tokyo Electron Ltd.) at lOOOrpm and prebaked at 150°C for 180 seconds to remove the solvent to form a chemically amplified positive photoresist film. The film thickness was measured by using Spectrometric Film Thickness Measurement System VM-1210 (Screen Semiconductor Solutions Co., Ltd.). Results are shown in Table 3.
• a photoresist film was formed by dispensing the chemically amplified positive photoresist composition to an 8 inch silicon wafer (Mark-8, Tokyo Electron Ltd.) and prebaked at 150°C for 180 seconds to remove the solvent.
• Film thickness was measured by using VM-1210 (Screen Semiconductor Solutions Co., Ltd.). Using a KrF stepper FPA 3000-EX5 (Canon Inc.), the 7.5 pm photoresist film was exposed to KrF ray through a reticle. The exposed silicon wafer was allowed to stand in a clean room (25°C,
• Lutonal M40 Polyvinylmethyl ether Mw 50,000 (BASF) Mowital B16H : Polyvinyl butyral Mw 10,000-20,000
• Weight average molecular weight was determined by gel permeation chromatography (GPC) using GPC columns and under analysis conditions involving a flow rate of l .OmL/min, an elution solvent of tetrahydrofuran and a column temperature of 40°C using mono-dispersed polystyrene as a standard. [0076] Viscosity measurement
• Viscosity was measured by Cannon- Fenske viscometer (VMC-45, Rigo Co. , Ltd . ) at 25°C. [0077] Crack resistance test
• a photoresist film was formed by dispensing a chemically amplified positive photoresist composition to an 8 inch silicon wafer (Mark-8, Tokyo Electron Ltd . ) and prebaked at 150°C for 180 seconds to remove the solvent.
• the film thickness was measured by usi ng Spectrometric Film
• Thickness Measurement System VM- 1210 (Screen Semiconductor Solutions Co. , Ltd . ) . The photoresist film surface was observed under an optical microscope.

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