TWI744391B - 化學放大正光阻組成物、其用途及使用其之圖案形成方法 - Google Patents

化學放大正光阻組成物、其用途及使用其之圖案形成方法 Download PDF

Info

Publication number
TWI744391B
TWI744391B TW106134662A TW106134662A TWI744391B TW I744391 B TWI744391 B TW I744391B TW 106134662 A TW106134662 A TW 106134662A TW 106134662 A TW106134662 A TW 106134662A TW I744391 B TWI744391 B TW I744391B
Authority
TW
Taiwan
Prior art keywords
alkali
chemically amplified
amplified positive
propylene glycol
mass
Prior art date
Application number
TW106134662A
Other languages
English (en)
Chinese (zh)
Other versions
TW201827928A (zh
Inventor
高市哲正
河戶俊二
鈴木理人
明石一通
片山朋英
Original Assignee
盧森堡商Ａｚ電子材料盧森堡有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 盧森堡商Ａｚ電子材料盧森堡有限公司 filed Critical 盧森堡商Ａｚ電子材料盧森堡有限公司
Publication of TW201827928A publication Critical patent/TW201827928A/zh
Application granted granted Critical
Publication of TWI744391B publication Critical patent/TWI744391B/zh

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F212/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an aromatic carbocyclic ring
    • C08F212/02—Monomers containing only one unsaturated aliphatic radical
    • C08F212/04—Monomers containing only one unsaturated aliphatic radical containing one ring
    • C08F212/06—Hydrocarbons
    • C08F212/08—Styrene
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F212/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an aromatic carbocyclic ring
    • C08F212/02—Monomers containing only one unsaturated aliphatic radical
    • C08F212/04—Monomers containing only one unsaturated aliphatic radical containing one ring
    • C08F212/06—Hydrocarbons
    • C08F212/12—Monomers containing a branched unsaturated aliphatic radical or a ring substituted by an alkyl radical
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G03F7/162—Coating on a rotating support, e.g. using a whirler or a spinner
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G03F7/168—Finishing the coated layer, e.g. drying, baking, soaking
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G03F7/2004—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/32—Liquid compositions therefor, e.g. developers
    • G03F7/322—Aqueous alkaline compositions
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/38—Treatment before imagewise removal, e.g. prebaking
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Medicinal Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Detergent Compositions (AREA)
TW106134662A 2016-10-12 2017-10-11 化學放大正光阻組成物、其用途及使用其之圖案形成方法 TWI744391B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP16002196 2016-10-12
??16002196.0 2016-10-12
EP16002196.0 2016-10-12

Publications (2)

Publication Number Publication Date
TW201827928A TW201827928A (zh) 2018-08-01
TWI744391B true TWI744391B (zh) 2021-11-01

Family

ID=57144708

Family Applications (1)

Application Number Title Priority Date Filing Date
TW106134662A TWI744391B (zh) 2016-10-12 2017-10-11 化學放大正光阻組成物、其用途及使用其之圖案形成方法

Country Status (8)

Country Link
US (1) US11029599B2 (enExample)
EP (1) EP3526644B1 (enExample)
JP (1) JP7317704B2 (enExample)
KR (1) KR102298153B1 (enExample)
CN (1) CN109804311B (enExample)
SG (1) SG11201900622UA (enExample)
TW (1) TWI744391B (enExample)
WO (1) WO2018069274A1 (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102656151B1 (ko) * 2017-09-29 2024-04-08 니폰 제온 가부시키가이샤 포지티브형 레지스트 조성물, 레지스트막 형성 방법, 및 적층체의 제조 방법
CN112292637A (zh) * 2018-06-22 2021-01-29 默克专利有限公司 光致抗蚀剂组合物、用于制造光致抗蚀剂涂层、经蚀刻的光致抗蚀剂涂层和经蚀刻的含硅层的方法以及制造使用其的器件的方法
TWI833992B (zh) * 2019-10-15 2024-03-01 美商羅門哈斯電子材料有限公司 光致抗蝕劑組成物及圖案形成方法
JP7600752B2 (ja) * 2020-03-18 2024-12-17 信越化学工業株式会社 レジスト材料及びパターン形成方法
CN116284517B (zh) * 2022-09-08 2025-06-27 上海八亿时空先进材料有限公司 一种分子量窄分布且高透光性phs树脂及其合成方法与应用
CN115421354B (zh) * 2022-09-29 2025-08-26 徐州博康信息化学品有限公司 一种正性光刻胶组合物及其制备与使用方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200707107A (en) * 2005-05-26 2007-02-16 Tokyo Ohka Kogyo Co Ltd Positive resist composition and method for forming resist pattern
TW200712763A (en) * 2005-07-12 2007-04-01 Az Electronic Materials Usa Photoresist composition for imaging thick films
TW201520694A (zh) * 2013-08-09 2015-06-01 Tokyo Ohka Kogyo Co Ltd 化學增幅型感光性樹脂組成物及使用其之阻劑圖型之製造方法
US20150212406A1 (en) * 2007-09-28 2015-07-30 Fujifilm Corporation Positive photosensitive resin composition and cured film forming method using the same

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5861231A (en) * 1996-06-11 1999-01-19 Shipley Company, L.L.C. Copolymers and photoresist compositions comprising copolymer resin binder component
JP2001290275A (ja) * 2000-02-03 2001-10-19 Fuji Photo Film Co Ltd ポジ型フォトレジスト組成物
JP2004198915A (ja) 2002-12-20 2004-07-15 Shin Etsu Chem Co Ltd ポジ型レジスト組成物及びパターン形成方法
US20070105040A1 (en) 2005-11-10 2007-05-10 Toukhy Medhat A Developable undercoating composition for thick photoresist layers
TW200739265A (en) * 2005-12-06 2007-10-16 Tokyo Ohka Kogyo Co Ltd Positive photoresist composition and method of forming photoresist pattern using the same
JP4954576B2 (ja) 2006-03-15 2012-06-20 東京応化工業株式会社 厚膜レジスト積層体およびその製造方法、レジストパターン形成方法
JP5260094B2 (ja) * 2007-03-12 2013-08-14 ローム・アンド・ハース・エレクトロニック・マテリアルズ，エル．エル．シー． フェノール系ポリマー及びこれを含有するフォトレジスト
JP5729313B2 (ja) 2011-01-19 2015-06-03 信越化学工業株式会社 化学増幅ポジ型レジスト材料及びパターン形成方法
JP5707359B2 (ja) * 2011-05-30 2015-04-30 富士フイルム株式会社 パターン形成方法、感活性光線性又は感放射線性樹脂組成物、レジスト膜、電子デバイスの製造方法及び電子デバイス
JP6255717B2 (ja) 2012-06-08 2018-01-10 住友化学株式会社 レジスト組成物及びレジストパターンの製造方法
JP5919122B2 (ja) * 2012-07-27 2016-05-18 富士フイルム株式会社 樹脂組成物及びそれを用いたパターン形成方法
JP6200721B2 (ja) * 2013-08-01 2017-09-20 富士フイルム株式会社 パターン形成方法、及びこれを用いた電子デバイスの製造方法
US9316900B2 (en) * 2013-10-11 2016-04-19 Taiwan Semiconductor Manufacturing Company, Ltd. Extreme ultraviolet lithography process and mask
JP6432170B2 (ja) * 2014-06-09 2018-12-05 信越化学工業株式会社 化学増幅ポジ型レジスト材料及びパターン形成方法
WO2016017232A1 (ja) * 2014-07-31 2016-02-04 富士フイルム株式会社 パターン形成方法、レジストパターン、電子デバイスの製造方法、及び、電子デバイス
KR102281050B1 (ko) * 2014-08-08 2021-07-23 닛산 가가쿠 가부시키가이샤 평탄화막용 또는 마이크로렌즈용 수지 조성물
US10527935B2 (en) * 2016-12-31 2020-01-07 Rohm And Haas Electronic Materials Llc Radiation-sensitive compositions and patterning and metallization processes

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200707107A (en) * 2005-05-26 2007-02-16 Tokyo Ohka Kogyo Co Ltd Positive resist composition and method for forming resist pattern
TW200712763A (en) * 2005-07-12 2007-04-01 Az Electronic Materials Usa Photoresist composition for imaging thick films
US20150212406A1 (en) * 2007-09-28 2015-07-30 Fujifilm Corporation Positive photosensitive resin composition and cured film forming method using the same
TW201520694A (zh) * 2013-08-09 2015-06-01 Tokyo Ohka Kogyo Co Ltd 化學增幅型感光性樹脂組成物及使用其之阻劑圖型之製造方法

Also Published As

Publication number Publication date
CN109804311B (zh) 2023-06-06
EP3526644B1 (en) 2020-11-25
JP7317704B2 (ja) 2023-07-31
CN109804311A (zh) 2019-05-24
TW201827928A (zh) 2018-08-01
SG11201900622UA (en) 2019-04-29
US20190235382A1 (en) 2019-08-01
KR102298153B1 (ko) 2021-09-08
US11029599B2 (en) 2021-06-08
JP2019532343A (ja) 2019-11-07
KR20190062558A (ko) 2019-06-05
WO2018069274A1 (en) 2018-04-19
EP3526644A1 (en) 2019-08-21

Similar Documents

Publication Publication Date Title
US9075306B2 (en) Chemically amplified negative resist composition and patterning process
TWI744391B (zh) 化學放大正光阻組成物、其用途及使用其之圖案形成方法
US20060166133A1 (en) Negative resist composition and patterning process
JP3877605B2 (ja) ネガ型レジスト材料及びこれを用いたパターン形成方法
US9017928B2 (en) Methods for manufacturing resin structure and micro-structure
US20130129988A1 (en) Chemically amplified positive resist composition and pattern forming process
US9063421B2 (en) Chemically amplified positive resist composition and pattern forming process
KR100582157B1 (ko) 레지스트 재료 및 패턴 형성 방법
US20070105042A1 (en) Resist composition and patterning process
KR101296480B1 (ko) 네가티브형 레지스트 재료 및 패턴 형성 방법
US8951717B2 (en) Methods for manufacturing resin structure and micro-structure
JP2006178423A (ja) 化学増幅ポジ型レジスト組成物
JP2010091691A (ja) ポジ型感放射線性樹脂組成物
JP2007052151A (ja) 電気泳動装置用化学増幅ポジ型レジスト組成物
JP2007025534A (ja) ポジ型ネガ型兼用ノボラック系化学増幅型レジスト組成物
JPWO2006035926A1 (ja) ポジ型液晶素子用フォトレジスト組成物
JP2007167834A (ja) インクジェット方式による材料パターン形成方法
JP2010044222A (ja) ポジ型感放射線性樹脂組成物