WO2018068388A1 - Qled显示装置的制作方法 - Google Patents

Qled显示装置的制作方法 Download PDF

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WO2018068388A1
WO2018068388A1 PCT/CN2016/110730 CN2016110730W WO2018068388A1 WO 2018068388 A1 WO2018068388 A1 WO 2018068388A1 CN 2016110730 W CN2016110730 W CN 2016110730W WO 2018068388 A1 WO2018068388 A1 WO 2018068388A1
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quantum dots
layer
quantum dot
green
blue
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刘国和
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TCL China Star Optoelectronics Technology Co Ltd
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Shenzhen China Star Optoelectronics Technology Co Ltd
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    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30—Devices specially adapted for multicolour light emission
    • H10K59/38—Devices specially adapted for multicolour light emission comprising colour filters or colour changing media [CCM]
    • H—ELECTRICITY
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    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H10H20/812—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures
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    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H10K50/115—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising active inorganic nanostructures, e.g. luminescent quantum dots
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    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/14—Carrier transporting layers
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    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/14—Carrier transporting layers
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    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/17—Carrier injection layers
    • H10K50/171—Electron injection layers
    • H—ELECTRICITY
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    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/18—Carrier blocking layers
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    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
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    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
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    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/1201—Manufacture or treatment
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    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/123—Connection of the pixel electrodes to the thin film transistors [TFT]
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    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
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    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/87—Passivation; Containers; Encapsulations
    • H—ELECTRICITY
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    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H10K71/166—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using selective deposition, e.g. using a mask

Definitions

  • the present invention relates to the field of display technologies, and in particular, to a method for fabricating a QLED display device.
  • Quantum Dots are spherical semiconductor nanoparticles composed of Group II-VI, Group III-V, and Group IV-VI elements, typically ranging in size from a few nanometers to tens of nanometers.
  • the semiconductor material gradually decreases from the bulk phase to a certain critical dimension (1-20 nm)
  • the volatility of the carrier becomes significant, the motion will be limited, resulting in an increase in kinetic energy, and the corresponding electronic structure is continuous from the bulk phase.
  • the energy level structure becomes a discontinuity of quasi-splitting, a phenomenon known as the quantum size effect. Therefore, due to the existence of the quantum size effect of the quantum dot material, the original continuous energy band can be transformed into a separate energy level structure, which can emit visible light after being excited by the outside.
  • quantum dot luminescent materials have the advantages of concentrated luminescence spectrum and high color purity. These advantages can be greatly improved in the display field to greatly improve the color gamut of the display and improve the color reproduction capability of the liquid crystal display (LCD).
  • the application of quantum dots in the field of displays can be mainly divided into two parts: photoluminescence (PL) and electroluminescence (EL).
  • the existing photoluminescence technology application is to mix and package three color quantum dots of R (red), G (green), and B (blue) in a plastic film (QD film) or a glass tube (QD tube) in a conventional backlight.
  • QD film plastic film
  • QD tube glass tube
  • the light is excited to achieve the purpose of increasing the color gamut.
  • the above technologies are relatively mature at present, there are still some problems that need to be improved. For example, whether it is a QD film or a QD tube structure, the amount of quantum dot materials required is large, and a white light backlight is used to excite mixed quantum dots, and the light utilization rate is not high.
  • Quantum dots light-emitting diodes are active electroluminescent devices used in quantum dots for display, and are self-luminous diodes like organic light emitting diodes (OLEDs). Compared with the photoluminescence application technology, a separate Thin Film Transistor (TFT) switch is required for each pixel (pixel), and the inorganic quantum dot material cannot be evaporated like the organic light-emitting material in the OLED. The way in which the desired pattern is made, the development of high pixel density color quantum dot electroluminescent devices has been limited. Related reports on existing quantum dot electroluminescent devices in the industry Most of them are monochromatic devices, and the pixel density is low.
  • TFT Thin Film Transistor
  • a white organic light emitting diode WOLED
  • CF color filter
  • the white light emitting layer of the WOLED is formed by mixing and emitting red, green and blue emitting fluorescent materials, and the red, green and blue photoresist layers of the CF layer filter white light emitted by the white light emitting layer to realize color display.
  • An object of the present invention is to provide a method for fabricating a QLED display device, which can produce a fine quantum dot pattern, can effectively improve the color gamut and contrast of the QLED display device, and has a simple manufacturing method, which saves cost and process time.
  • the present invention provides a method for fabricating a QLED display device, comprising the following steps:
  • Step 1 Providing a TFT array substrate, and sequentially forming a hole transport layer and an electron blocking layer on the TFT array substrate;
  • the TFT array substrate includes a TFT layer and an anode layer formed on the TFT layer, and the TFT layer includes a plurality of TFTs arranged in an array;
  • Step 2 forming a white light quantum dot layer on the electron blocking layer;
  • the white light quantum dot layer contains a red quantum dot, a green quantum dot, a blue quantum dot, and an ultraviolet photoinitiator;
  • Step 3 providing a photomask, irradiating the white light quantum dot layer with ultraviolet light by using a photomask, the photomask comprising a light transmitting portion and an opaque portion, corresponding to the white light quantum dot layer during ultraviolet light irradiation
  • the ultraviolet photoinitiator is subjected to ultraviolet light to cause irreversible quenching of red, green, and blue quantum dots in the region, thereby forming a sub-pixel spacer region
  • the white light quantum a region on the dot layer corresponding to the portion under the opaque portion is not affected by ultraviolet light irradiation, thereby forming a plurality of array-arranged sub-pixel regions spaced apart by the sub-pixel spacer region, a plurality of sub-pixel regions are in one-to-one correspondence with the plurality of TFTs;
  • Step 4 forming an electron transport/injection layer on the white light quantum dot layer, forming a cathode layer on the electron transport/injection layer to obtain a QLED substrate;
  • Step 5 providing a color film substrate, grouping and packaging the color film substrate and the QLED substrate to obtain a QLED display device.
  • the step 2 specifically includes the following steps:
  • Step 21 performing surface modification treatment on the red quantum dots, the green quantum dots, and the blue quantum dots, and then dissolving the red quantum dots, the green quantum dots, and the blue quantum dots in the solvent, and adding a UV photoinitiator to prepare a quantum dot mixed solution containing red quantum dots, green quantum dots, blue quantum dots, and an ultraviolet photoinitiator;
  • Step 22 Applying the quantum dot mixed solution to the electron blocking layer by spin coating or slit coating to form a white light quantum dot layer.
  • the step 2 specifically includes the following steps:
  • Step 21 ′ the red quantum dots, the green quantum dots, and the blue quantum dots are respectively subjected to surface modification treatment to have polar or non-polar groups on the surface, and at this time, red quantum dots and blue quantum dots
  • the surface polarity is the same, the red quantum dots are opposite to the surface polarity of the green quantum dots, and then the red quantum dots, the green quantum dots, and the blue quantum dots are respectively dissolved in a solvent having the same polarity, and respectively added by ultraviolet light.
  • Step 22 ′ applying a blue quantum dot solution, a green quantum dot solution, and a red quantum dot solution to the electron blocking layer in sequence by spin coating or slit coating to form a white light quantum dot layer.
  • the ratio of the number of the blue quantum dots to the green quantum dots is ⁇ 4:1, and the ratio of the number of the green quantum dots to the red quantum dots is ⁇ 1:1.
  • the red quantum dots, the green quantum dots, and the blue quantum dots each have a core composed of one or more of a II-VI semiconductor material, a III-V semiconductor material, and a IV-VI nano semiconductor material.
  • the quantum dots of the shell structure, the red quantum dots, the green quantum dots, and the blue quantum dots have a particle diameter of 1-10 nm.
  • the ultraviolet photoinitiator is benzoin dimethyl ether or methyl benzoylformate.
  • the ultraviolet light irradiation time is 0.5-4 h.
  • the hole transport layer and the electron blocking layer are sequentially formed by spin coating or evaporation, the material of the hole transport layer is PEDOT or Poly-TPD, and the material of the electron blocking layer is TFB. , or PVK.
  • an electron transport/injection layer is formed by spin coating or evaporation, and the material of the electron transport/injection layer is Alq3, TPBI, or ZnO nanoparticles.
  • the cathode layer is formed by evaporation, and the material of the cathode layer is silver or magnesium.
  • the color filter substrate includes a color filter layer, and the color filter layer includes a plurality of red color resist units, a green color resist unit, and a blue color resist unit.
  • the invention also provides a method for manufacturing a QLED display device, comprising the following steps:
  • Step 1 Providing a TFT array substrate, and sequentially forming a hole transport layer and an electron blocking layer on the TFT array substrate;
  • the TFT array substrate includes a TFT layer and an anode layer formed on the TFT layer, and the TFT layer includes a plurality of TFTs arranged in an array;
  • Step 2 forming a white light quantum dot layer on the electron blocking layer;
  • the white light quantum dot layer contains a red quantum dot, a green quantum dot, a blue quantum dot, and an ultraviolet photoinitiator;
  • Step 3 providing a photomask, irradiating the white light quantum dot layer with ultraviolet light by using a photomask, the photomask comprising a light transmitting portion and an opaque portion, corresponding to the white light quantum dot layer during ultraviolet light irradiation
  • the ultraviolet photoinitiator is subjected to ultraviolet light to cause irreversible quenching of red, green, and blue quantum dots in the region, thereby forming a sub-pixel spacer region
  • the white light quantum a region on the dot layer corresponding to the portion under the opaque portion is not affected by ultraviolet light irradiation, thereby forming a plurality of array-arranged sub-pixel regions spaced apart by the sub-pixel spacer region, a plurality of sub-pixel regions are in one-to-one correspondence with the plurality of TFTs;
  • Step 4 forming an electron transport/injection layer on the white light quantum dot layer, forming a cathode layer on the electron transport/injection layer to obtain a QLED substrate;
  • Step 5 providing a color film substrate, grouping and packaging the color film substrate and the QLED substrate to obtain a QLED display device;
  • the color filter substrate includes a color filter layer, and the color filter layer includes a plurality of red color resist units, a green color resist unit, and a blue color resist unit;
  • the ultraviolet photoinitiator is benzoin dimethyl ether or methyl benzoylformate.
  • the present invention provides a method for fabricating a QLED display device, by using a WOLED production process, using a white light quantum dot layer instead of an organic light emitting layer in a WOLED structure, and adding an ultraviolet light initiator to the white light quantum dot layer,
  • the quantum dots between the sub-pixel regions are irreversibly quenched by the reticle and the ultraviolet light to form a fine quantum dot pattern, thereby eliminating the mutual influence between the adjacent two sub-pixel regions, and effectively reducing the two sub-pixels.
  • the distance between the regions increases the aperture ratio, enhances the color gamut and contrast of the display device, enhances the color performance of the display device, and the manufacturing method is simple, saving cost and process time, and the QLED display device produced by the conventional TFT-
  • the LCD display device is thinner and lighter than the conventional liquid crystal cell, and has a longer life and higher luminous efficiency than the conventional WOLED display device.
  • FIG. 1 is a schematic flow chart of a method of fabricating a QLED display device of the present invention
  • step 1 is a schematic diagram of step 1 of a method of fabricating a QLED display device of the present invention
  • step 2 is a schematic diagram of step 2 of a method for fabricating a QLED display device of the present invention
  • step 3 is a schematic diagram of step 3 of a method for fabricating a QLED display device of the present invention.
  • step 4 is a schematic diagram of step 4 of a method for fabricating a QLED display device of the present invention.
  • Fig. 6 is a schematic view showing the fifth step of the method of fabricating the QLED display device of the present invention.
  • the present invention provides a method for fabricating a QLED display device, including the following steps:
  • Step 1 as shown in FIG. 2, a TFT array substrate 10 is provided, and a hole transport layer 21 and an electron blocking layer 22 are sequentially formed on the TFT array substrate 10.
  • the TFT array substrate 10 includes a TFT layer 11 and an anode layer 12 formed on the TFT layer 11, and the TFT layer 11 includes a plurality of TFTs arranged in an array.
  • the hole transport layer 21 and the electron blocking layer 22 are sequentially formed by spin coating or vapor deposition, and the material of the hole transport layer 21 may be poly (3, 4).
  • the material of the hole transport layer 21 may be poly (3, 4).
  • the material of the electron blocking layer 22 may be selected from 1,2,4,5-tetrakis(trifluoromethyl)benzene (TFB) or poly(9-vinylcarbazole) (poly(9-).
  • TFB 1,2,4,5-tetrakis(trifluoromethyl)benzene
  • TFB 1,2,4,5-tetrakis(trifluoromethyl)benzene
  • poly(9-vinylcarbazole) poly(9-).
  • One of vinlycarbazole), PVK One of vinly
  • Step 2 As shown in FIG. 3, a white light quantum dot layer 23 is formed on the electron blocking layer 22; the white light quantum dot layer 23 contains a red quantum dot 231, a green quantum dot 232, and a blue quantum dot 233. And ultraviolet photoinitiator 234.
  • the step 2 may be performed by using two schemes.
  • the step 2 specifically includes:
  • Step 21 preparing a quantum dot mixed solution containing red quantum dots 231, green quantum dots 232, blue quantum dots 233, and ultraviolet photoinitiator 234.
  • the step 21 is specifically: performing surface modification treatment on the red quantum dot 231, the green quantum dot 232, and the blue quantum dot 233, and then dissolving the red quantum dot 231, the green quantum dot 232, and the blue quantum dot 233. In the solvent, and adding the ultraviolet photoinitiator 234, thereby obtaining the amount Mix the solution at the sub-point.
  • Step 22 applying the quantum dot mixed solution onto the electron blocking layer 22 by spin coating or slit coating to form a white light quantum dot layer 23.
  • step 2 specifically includes:
  • Step 21 ′ respectively preparing a red quantum dot solution containing red quantum dots 231 and ultraviolet photoinitiator 234, a green quantum dot solution containing green quantum dots 232 and ultraviolet photoinitiator 234, and containing blue quantum dots 233 and ultraviolet light.
  • the red quantum dot 231 , the green quantum dot 232 , and the blue quantum dot 233 are respectively subjected to surface modification treatment to have a polar or non-polar group on the surface thereof.
  • the surface of the red quantum dot 231 and the blue quantum dot 233 have the same polarity, and the surface of the red quantum dot 231 and the green quantum dot 232 have opposite polarities, and then the red quantum dot 231, the green quantum dot 232, and the blue quantum Point 233 is respectively dissolved in a solvent having the same polarity, and ultraviolet light initiator 234 is separately added to prepare a red quantum dot solution, a green quantum dot solution, and a blue quantum dot solution, respectively.
  • the red quantum dot 231, the green quantum dot 232, and the blue quantum dot 233 are surface-modified, respectively, so that the surface of the red quantum dot 231 and the blue quantum dot 233 contains a polar group, so that the green quantum dot 232
  • the surface contains a non-polar group, and then the red quantum dot 231 and the blue quantum dot 233 are respectively dissolved in a polar solvent, and the green quantum dot 232 is dissolved in a non-polar solvent, and respectively added to the ultraviolet photoinitiator 234, thereby respectively
  • a red quantum dot solution, a green quantum dot solution, and a blue quantum dot solution were prepared.
  • Step 22 ′ applying a blue quantum dot solution, a green quantum dot solution, and a red quantum dot solution to the electron blocking layer 22 in sequence by spin coating or slit coating to form white light quantum dots.
  • Layer 23 applying a blue quantum dot solution, a green quantum dot solution, and a red quantum dot solution to the electron blocking layer 22 in sequence by spin coating or slit coating to form white light quantum dots.
  • the ratio of the number of the red quantum dots 231, the green quantum dots 232, and the blue quantum dots 233 may be appropriately adjusted according to actual needs, and preferably, the blue
  • the ratio of the number of chromatic quantum dots 233 to the green quantum dots 232 is ⁇ 4: 1
  • the ratio of the number of the green quantum dots 232 to the red quantum dots 231 is ⁇ 1:1.
  • the red quantum dots 231, the green quantum dots 232, and the blue quantum dots 233 are all composed of II-VI semiconductor materials (such as CdS, CdSe, HgTe, ZnS, ZnSe, ZnTe, HgS) and III-V families.
  • II-VI semiconductor materials such as CdS, CdSe, HgTe, ZnS, ZnSe, ZnTe, HgS
  • III-V families III-V families.
  • a quantum dot having a core-shell structure composed of one or more of a semiconductor material (such as InP, InAs, GaP, GaAs) and an IV-VI group of nano semiconductor materials.
  • the particle diameters of the red quantum dots 231, the green quantum dots 232, and the blue quantum dots 233 are most preferably between 1-10 nm.
  • Step 3 as shown in FIG. 4, a photomask 90 is provided, and the white light quantum dot layer 23 is irradiated with ultraviolet light for 0.5-4 h by using the photomask 90.
  • the photomask 90 includes a light transmitting portion 91 and an opaque portion 92. During the ultraviolet light irradiation, in the region of the white light quantum dot layer 23 corresponding to the light-transmitting portion 91, the ultraviolet light initiator 234 is subjected to ultraviolet light to make red, green, and blue in the region.
  • the quantum dots 231, 232, and 233 are irreversibly quenched to form a sub-pixel spacer region, and the white light quantum dot layer 23 corresponding to the region under the opaque portion 92 is not affected by ultraviolet light irradiation. And forming a plurality of sub-pixel regions arranged by the plurality of sub-pixel regions, wherein the plurality of sub-pixel regions are in one-to-one correspondence with the plurality of TFTs.
  • the ultraviolet photoinitiator 234 is selected from several commonly used ultraviolet photoinitiators, such as benzoin dimethyl ether (BDK), methyl benzoylformate (MBF), etc. It does not directly affect the luminescent properties of the quantum dot material, but after ultraviolet light irradiation, the highly active free radicals generated directly annihilate the quantum dot material, causing the quantum dot material to lose its original function.
  • BDK benzoin dimethyl ether
  • MMF methyl benzoylformate
  • the ultraviolet photoinitiator 234 is cracked by ultraviolet light to produce strong The electron-positive high-negative radical group that captures electrons captures excited electrons, making it impossible to recombine with holes, causing irreversible annihilation of red, green, and blue quantum dots 231, 232, and 233 in the region. .
  • Step 4 As shown in FIG. 5, an electron transport/injection layer 24 is formed on the white light quantum dot layer 23, and a cathode layer 25 is formed on the electron transport/injection layer 24 to obtain a QLED substrate.
  • the electron transport/injection layer 24 is formed by spin coating or evaporation, and the material of the electron transport/injection layer 24 may be tris(8-hydroxyquinoline aluminum) (tri(8). -quinolinolato)aluminum,Alq3),1,3,5-tris(1-phenyl-1H-benzimidazol-2-yl)benzene (1,3,5-Tri(1-phenyl-1H-benzo[d One of imidazol-2-yl)phenyl, TPBI), or zinc oxide (ZnO) nanoparticles.
  • tri(8). -quinolinolato)aluminum,Alq3 1,3,5-tris(1-phenyl-1H-benzimidazol-2-yl)benzene
  • TPBI zinc oxide
  • ZnO zinc oxide
  • the cathode layer 25 is formed by vapor deposition, and the material thereof is a metal material such as silver (Ag) or magnesium (Mg), and the cathode layer 25 has a film thickness of about 200 angstroms.
  • a color filter substrate 30 is provided.
  • the color filter substrate 30 includes a color filter layer 31.
  • the color filter layer 31 includes a plurality of red color resist units 311 and green color resists arranged alternately.
  • the unit 312 and the blue color resist unit 313; the color film substrate 30 and the QLED substrate are paired and packaged to obtain a QLED display device.
  • the manufacturing method of the QLED display device of the invention adopts the structure of the WQLED plus the CF film, increases the color gamut of the display device and reduces the difficulty of the process, and can realize mass production in a short period of time.
  • each sub-pixel region of the white light quantum dot layer 23 is controlled by the corresponding TFT to control whether it emits light or not, and because of the sub-pixel interval region of the white light quantum dot layer 23
  • the quantum dots are quenched by ultraviolet irradiation, so they do not emit light under any conditions, thereby eliminating the mutual influence between two adjacent sub-pixel regions, effectively reducing the distance between the two sub-pixel regions, and increasing the opening.
  • the red quantum dots 231, the green quantum dots 232, and the blue quantum dots 233 in the sub-pixel region of the white light quantum dot layer 23 emit red light (R) and green light respectively in the excited state. ), blue light (B), thereby emitting white light (W) after mixing, and then white light emitted from each sub-pixel region passes through the red color resist unit 311, the green color resist unit 312, and the blue color resist passing through the color filter layer 31.
  • the unit 313 is then filtered into three primary colors of red, green, and blue, thereby finally achieving color display.
  • the present invention provides a method for fabricating a QLED display device by using a WOLED production process, using a white light quantum dot layer instead of the organic light emitting layer in the WOLED structure, and adding an ultraviolet light initiator to the white light quantum dot layer.
  • the quantum dots between the sub-pixel regions are irreversibly quenched by the reticle and the ultraviolet light to form a fine quantum dot pattern, thereby eliminating the mutual influence between the adjacent two sub-pixel regions, and effectively reducing the two sub-pixels.
  • the distance between the regions increases the aperture ratio, enhances the color gamut and contrast of the display device, enhances the color performance of the display device, and the manufacturing method is simple, saving cost and process time, and the QLED display device produced by the conventional TFT-
  • the LCD display device is thinner and lighter than the conventional liquid crystal cell, and has a longer life and higher luminous efficiency than the conventional WOLED display device.

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Abstract

一种QLED显示装置的制作方法，借助WOLED生产工艺，使用白光量子点层(23)代替WOLED结构中的有机发光层，并在白光量子点层(23)中添加紫外光引发剂(234)，借助光罩(90)及紫外光照射使子像素区域之间的量子点发生不可逆的猝灭，形成精细的量子点图形，从而消除相邻两个子像素区域之间的相互影响，可有效减小两个子像素区域之间距离，增加开口率，同时提升显示装置的色域及对比度，增强显示装置的色彩表现能力，制作方法简单，节约了成本与制程时间，所制作的QLED显示装置，与传统的TFT-LCD显示装置相比不需单独制作液晶盒，更薄更轻便，与传统的WOLED显示装置相比具有更长的寿命及更高的发光效率。

Description

QLED显示装置的制作方法 技术领域
本发明涉及显示技术领域，尤其涉及一种QLED显示装置的制作方法。
背景技术
随着显示技术的不断发展，人们对显示装置的显示质量要求也越来越高。量子点(Quantum Dots，QDs)是一种由II-VI族、III-V族、IV-VI族元素组成的球形半导体纳米微粒，粒径一般在几纳米至数十纳米之间。当半导体材料从体相逐渐减小至一定临界尺寸(1～20纳米)后，其载流子的波动性变得显著，运动将受限，导致动能的增加，相应的电子结构从体相连续的能级结构变成准分裂的不连续，这一现象称作量子尺寸效应。因此，量子点材料由于量子尺寸效应的存在，原本连续的能带变成分立的能级结构，受外界激发后可发射可见光。
比较常见的II-VI族，III-V族以及IV-VI族的量子点都遵守量子尺寸效应，其性质随尺寸呈现规律性变化，吸收及发射波长随尺寸变化而变化。此外，量子点发光材料具有发光光谱集中，色纯度高等优点，在显示器领域利用这些优点可大幅度提高显示器的色域，提高液晶显示器(Liquid Crystal Display，LCD)的色彩还原能力。
量子点在显示器领域的应用主要可分为光致发光(PL)及电致发光(EL)两个部分。现有的光致发光技术应用是将R(红)、G(绿)、B(蓝)的三色量子点混合封装于塑料薄膜(QD film)或玻璃管(QD tube)中，在传统背光激发下发光以达到增加色域的目的。上述技术目前虽较为成熟，但依然存在一些问题亟待改善，例如，无论是QD film还是QD tube结构，需求的量子点材料用量都较大，且采用白光背光源激发混合量子点，光利用率不高。
量子点电致发光二极管(Quantum dots Light-emitting Diodes，QLED)为量子点应用于显示器中的有源电致发光器件，和有机发光二极管(Organic Light Emitting Diodes，OLED)一样都是自发光型二极管，相比于光致发光应用技术而言需对应每个像素(pixel)制作独立的薄膜晶体管(Thin Film Transistor，TFT)开关，且无机量子点材料无法像OLED中的有机发光材料一样以蒸镀的方式制成所需的图形，所以高像素密度彩色量子点电致发光器件的发展一直受到限制。业界现有量子点电致发光器件的相关报道也 多以单色器件为主，且像素密度均较低。
现有技术中，为实现OLED显示器的全彩化，一种方式是通过白色有机发光二极管(White Organic Light Emitting Diode，WOLED)和彩色滤光(Color Filter，CF)层的功能叠加来实现。其中，WOLED的白光发光层由红、绿、蓝色发射荧光材料混合蒸镀而成，CF层的红、绿、蓝色光阻层对白光发光层发射白光进行滤光，从而实现彩色显示。
发明内容
本发明的目的在于提供一种QLED显示装置的制作方法，能够制作出精细的量子点图形，可有效提升QLED显示装置的色域及对比度，且制作方法简单，节约了成本与制程时间。
为实现上述目的，本发明提供一种QLED显示装置的制作方法，包括如下步骤：
步骤1、提供TFT阵列基板，在所述TFT阵列基板上依次形成空穴传输层和电子阻挡层；
所述TFT阵列基板包括TFT层、及形成于TFT层上的阳极层，所述TFT层包括数个阵列排布的TFT；
步骤2、在所述电子阻挡层上涂布形成白光量子点层；所述白光量子点层内含有红色量子点、绿色量子点、蓝色量子点、及紫外光引发剂；
步骤3、提供光罩，利用光罩对白光量子点层进行紫外光照射，所述光罩包括透光部分、及不透光部分，在紫外光照射过程中，在所述白光量子点层上对应位于所述透光部分下的区域内，紫外光引发剂受到紫外光作用后使得该区域内的红色、绿色、蓝色量子点发生不可逆的猝灭，从而形成子像素间隔区域，所述白光量子点层上对应位于所述不透光部分下的区域，未经紫外光照射则不受影响，从而形成由所述子像素间隔区域所间隔开的数个阵列排布的子像素区域，所述数个子像素区域与所述数个TFT一一对应；
步骤4、在所述白光量子点层上形成电子传输/注入层，在所述电子传输/注入层上形成阴极层，得到QLED基板；
步骤5、提供彩膜基板，将所述彩膜基板与QLED基板进行对组、封装，得到QLED显示装置。
可选地，所述步骤2具体包括如下步骤：
步骤21、将红色量子点、绿色量子点、蓝色量子点分别进行表面改性处理，然后将红色量子点、绿色量子点、蓝色量子点溶于溶剂中，并加入 紫外光引发剂，从而配制得到含有红色量子点、绿色量子点、蓝色量子点、和紫外光引发剂的量子点混合溶液；
步骤22、将所述量子点混合溶液采用旋涂、或狭缝涂布的方式涂布于所述电子阻挡层上，形成白光量子点层。
可选地，所述步骤2具体包括如下步骤：
步骤21’、将红色量子点、绿色量子点、蓝色量子点分别进行表面改性处理，使其表面含有极性或非极性的基团，且此时，红色量子点与蓝色量子点的表面极性相同，红色量子点与绿色量子点的表面极性相反，然后将红色量子点、绿色量子点、蓝色量子点分别溶于与其极性相同的溶剂中，并分别加入紫外光引发剂，从而分别配制得到包含红色量子点和紫外光引发剂的红色量子点溶液、包含绿色量子点和紫外光引发剂的绿色量子点溶液、及包含蓝色量子点和紫外光引发剂的蓝色量子点溶液；
步骤22’、采用旋涂、或狭缝涂布的方式按顺序依次将蓝色量子点溶液、绿色量子点溶液、及红色量子点溶液涂布于所述电子阻挡层上，形成白光量子点层。
所述步骤2中形成白光量子点层中，所述蓝色量子点与绿色量子点的数量比例≥4:1，所述绿色量子点与红色量子点的数量比例≥1:1。
所述红色量子点、绿色量子点、蓝色量子点均为由Ⅱ-Ⅵ族半导体材料、Ⅲ-Ⅴ族半导体材料、Ⅳ-Ⅵ族纳米半导体材料中的一种或多种所组成的具有核壳结构的量子点，所述红色量子点、绿色量子点、蓝色量子点的粒径均为1-10nm。
所述紫外光引发剂为安息香双甲醚、或苯甲酰甲酸甲酯。
所述步骤3中，紫外光照射时间为0.5-4h。
所述步骤1中，采用旋涂或蒸镀的方式依次形成空穴传输层和电子阻挡层，所述空穴传输层的材料为PEDOT、或Poly-TPD，所述电子阻挡层的材料为TFB、或PVK。
所述步骤4中，采用旋涂或蒸镀的方式形成电子传输/注入层，所述电子传输/注入层的材料为Alq3、TPBI、或ZnO纳米颗粒。采用蒸镀的方式形成所述阴极层，所述阴极层的材料为银、或镁。
所述彩膜基板包括彩色滤光层，所述彩色滤光层包括交替排列的数个红色色阻单元、绿色色阻单元、及蓝色色阻单元。
本发明还提供一种QLED显示装置的制作方法，包括如下步骤：
步骤1、提供TFT阵列基板，在所述TFT阵列基板上依次形成空穴传输层和电子阻挡层；
所述TFT阵列基板包括TFT层、及形成于TFT层上的阳极层，所述TFT层包括数个阵列排布的TFT；
步骤2、在所述电子阻挡层上涂布形成白光量子点层；所述白光量子点层内含有红色量子点、绿色量子点、蓝色量子点、及紫外光引发剂；
步骤3、提供光罩，利用光罩对白光量子点层进行紫外光照射，所述光罩包括透光部分、及不透光部分，在紫外光照射过程中，在所述白光量子点层上对应位于所述透光部分下的区域内，紫外光引发剂受到紫外光作用后使得该区域内的红色、绿色、蓝色量子点发生不可逆的猝灭，从而形成子像素间隔区域，所述白光量子点层上对应位于所述不透光部分下的区域，未经紫外光照射则不受影响，从而形成由所述子像素间隔区域所间隔开的数个阵列排布的子像素区域，所述数个子像素区域与所述数个TFT一一对应；
步骤4、在所述白光量子点层上形成电子传输/注入层，在所述电子传输/注入层上形成阴极层，得到QLED基板；
步骤5、提供彩膜基板，将所述彩膜基板与QLED基板进行对组、封装，得到QLED显示装置；
其中，所述彩膜基板包括彩色滤光层，所述彩色滤光层包括交替排列的数个红色色阻单元、绿色色阻单元、及蓝色色阻单元；
其中，所述紫外光引发剂为安息香双甲醚、或苯甲酰甲酸甲酯。
本发明的有益效果：本发明提供一种QLED显示装置的制作方法，借助WOLED生产工艺，使用白光量子点层代替WOLED结构中的有机发光层，并在白光量子点层中添加紫外光引发剂，借助光罩及紫外光照射使子像素区域之间的量子点发生不可逆的淬灭，形成精细的量子点图形，从而消除相邻两个子像素区域之间的相互影响，可有效减小两个子像素区域之间距离，增加开口率，同时提升显示装置的色域及对比度，增强显示装置的色彩表现能力，制作方法简单，节约了成本与制程时间，所制作的QLED显示装置，与传统的TFT-LCD显示装置相比不需单独制作液晶盒，更薄更轻便，与传统的WOLED显示装置相比具有更长的寿命及更高的发光效率。
为了能更进一步了解本发明的特征以及技术内容，请参阅以下有关本发明的详细说明与附图，然而附图仅提供参考与说明用，并非用来对本发明加以限制。
附图说明
下面结合附图，通过对本发明的具体实施方式详细描述，将使本发明 的技术方案及其它有益效果显而易见。
附图中，
图1为本发明的QLED显示装置的制作方法的流程示意图；
图2为本发明的QLED显示装置的制作方法的步骤1的示意图；
图3为本发明的QLED显示装置的制作方法的步骤2的示意图；
图4为本发明的QLED显示装置的制作方法的步骤3的示意图；
图5为本发明的QLED显示装置的制作方法的步骤4的示意图；
图6为本发明的QLED显示装置的制作方法的步骤5的示意图。
具体实施方式
为更进一步阐述本发明所采取的技术手段及其效果，以下结合本发明的优选实施例及其附图进行详细描述。
请参阅图1，本发明提供一种QLED显示装置的制作方法，包括如下步骤：
步骤1、如图2所示，提供TFT阵列基板10，在所述TFT阵列基板10上依次形成空穴传输层21和电子阻挡层22。
所述TFT阵列基板10包括TFT层11、及形成于TFT层11上的阳极层12，所述TFT层11包括数个阵列排布的TFT。
具体地，所述步骤1中，采用旋涂(spin coating)或蒸镀的方式依次形成空穴传输层21和电子阻挡层22，所述空穴传输层21的材料可为聚(3,4-亚乙二氧基噻吩)(poly(ethylenedioxythiophene)，PEDOT)、聚(N,N'双(4-丁基苯基)-N,N'-双(苯基)联苯胺)(Poly-TPD)中的一种，所述电子阻挡层22的材料可选择1,2,4,5-四(三氟甲基)苯(TFB)、聚(9-乙烯基咔唑)(poly(9-vinlycarbazole)，PVK)中的一种。
步骤2、如图3所示，在所述电子阻挡层22上涂布形成白光量子点层23；所述白光量子点层23内含有红色量子点231、绿色量子点232、蓝色量子点233、及紫外光引发剂234。
具体地，所述步骤2可以分别采用两个方案进行，对于第一方案，所述步骤2具体包括：
步骤21、配制得到含有红色量子点231、绿色量子点232、蓝色量子点233、和紫外光引发剂234的量子点混合溶液。
其中，所述步骤21具体为，将红色量子点231、绿色量子点232、蓝色量子点233分别进行表面改性处理，然后将红色量子点231、绿色量子点232、蓝色量子点233溶于溶剂中，并加入紫外光引发剂234，从而得到量 子点混合溶液。
步骤22、将所述量子点混合溶液采用旋涂、或狭缝涂布(slit coating)的方式涂布于所述电子阻挡层22上，形成白光量子点层23。
而对于第二方案，所述步骤2具体包括：
步骤21’、分别配制包含红色量子点231和紫外光引发剂234的红色量子点溶液、包含绿色量子点232和紫外光引发剂234的绿色量子点溶液、及包含蓝色量子点233和紫外光引发剂234的蓝色量子点溶液。
其中，所述步骤21’具体为，将所述将红色量子点231、绿色量子点232、蓝色量子点233分别进行表面改性处理，使其表面含有极性或非极性的基团，且此时，红色量子点231与蓝色量子点233的表面极性相同，红色量子点231与绿色量子点232的表面极性相反，然后将红色量子点231、绿色量子点232、蓝色量子点233分别溶于与其极性相同的溶剂中，并分别加入紫外光引发剂234，从而分别配制得到红色量子点溶液、绿色量子点溶液、蓝色量子点溶液。例如，将红色量子点231、绿色量子点232、蓝色量子点233分别进行表面改性处理，使红色量子点231、蓝色量子点233的表面含有极性基团，使绿色量子点232的表面含有非极性基团，然后红色量子点231、蓝色量子点233分别溶解于极性溶剂中，绿色量子点232溶解于非极性溶剂中，并分别加入紫外光引发剂234，从而分别配制得到红色量子点溶液、绿色量子点溶液、蓝色量子点溶液。
步骤22’、采用旋涂、或狭缝涂布的方式按顺序依次将蓝色量子点溶液、绿色量子点溶液、及红色量子点溶液涂布于所述电子阻挡层22上，形成白光量子点层23。
具体地，所述步骤2中形成白光量子点层23中，所述红色量子点231、绿色量子点232、蓝色量子点233的数量比例可根据实际需要进行适当调整，优选地，所述蓝色量子点233与绿色量子点232的数量比例≥4:1，所述绿色量子点232与红色量子点231的数量比例≥1:1。
具体地，所述红色量子点231、绿色量子点232、蓝色量子点233均为由Ⅱ-Ⅵ族半导体材料(如CdS、CdSe、HgTe、ZnS、ZnSe、ZnTe、HgS)、Ⅲ-Ⅴ族半导体材料(如InP、InAs、GaP、GaAs)、Ⅳ-Ⅵ族纳米半导体材料中的一种或多种所组成的具有核壳结构的量子点。
具体地，所述红色量子点231、绿色量子点232、蓝色量子点233的粒径最优选在1-10nm之间。
步骤3、如图4所示，提供光罩90，利用光罩90对白光量子点层23进行紫外光照射0.5-4h，所述光罩90包括透光部分91、及不透光部分92， 在紫外光照射过程中，在所述白光量子点层23上对应位于所述透光部分91下的区域内，紫外光引发剂234受到紫外光作用后使得该区域内的红色、绿色、蓝色量子点231、232、233发生不可逆的猝灭，从而形成子像素间隔区域，所述白光量子点层23上对应位于所述不透光部分92下的区域，未经紫外光照射则不受影响，从而形成由所述子像素间隔区域所间隔开的数个阵列排布的子像素区域，所述数个子像素区域与所述数个TFT一一对应。
具体地，所述紫外光光引发剂234选自较常用的几种紫外光引发剂，如：安息香双甲醚(BDK)、苯甲酰甲酸甲酯(MBF)等，该类引发剂其分子本身不会直接影响量子点材料的发光性质，但是经过紫外光照射后，其产生的高活性自由基会直接猝灭量子点材料，使量子点材料丧失原有的功能。因此，在所述步骤3的紫外光照射过程中，在所述白光量子点层23上对应位于所述透光部分91下的区域内，紫外光引发剂234受到紫外光作用后裂解产生具有强吸电子能力的高电负性自由基基团，捕获受激电子，使其无法与空穴复合，从而使该区域内的红色、绿色、蓝色量子点231、232、233发生不可逆的猝灭。
步骤4、如图5所示，在所述白光量子点层23上形成电子传输/注入层24，在所述电子传输/注入层24上形成阴极层25，得到QLED基板。
具体地，所述步骤4中，采用旋涂或蒸镀的方式形成电子传输/注入层24，所述电子传输/注入层24的材料可为三(8-羟基喹啉铝)(tri(8-quinolinolato)aluminum，Alq3)、1,3,5-三(1-苯基-1H-苯并咪唑-2-基)苯(1,3,5-Tri(1-phenyl-1H-benzo[d]imidazol-2-yl)phenyl，TPBI)、或氧化锌(ZnO)纳米颗粒中的一种。
具体地，所述阴极层25通过蒸镀的方式形成，其材料为银(Ag)、镁(Mg)等金属材料，所述阴极层25的膜厚约为200埃。
步骤5、如图6所示，提供彩膜基板30，所述彩膜基板30包括彩色滤光层31，所述彩色滤光层31包括交替排列的数个红色色阻单元311、绿色色阻单元312、及蓝色色阻单元313；将所述彩膜基板30与QLED基板进行对组、封装，得到QLED显示装置。
本发明的QLED显示装置的制作方法，借助WOLED生产工艺，所制作的QLED显示装置，采用WQLED加CF膜的结构，增加显示装置色域的同时降低了制程难度，短期内可以实现大规模量产，所制作的QLED显示装置在点亮时，白光量子点层23的每个子像素区域分别由对应的TFT控制其是否发光及发光的强弱，且由于白光量子点层23的子像素间隔区域内 的量子点因经过紫外照射的淬灭处理，因此任何情况下均不会发光，从而消除了相邻两个子像素区域之间的相互影响，可有效减小两个子像素区域之间距离，增加开口率；如图6所示，白光量子点层23的子像素区域内的红色量子点231、绿色量子点232、蓝色量子点233在激发态下分别发红光(R)、绿光(G)、蓝光(B)，从而经混合后发出白光(W)，然后每一子像素区域发出的白光在经过彩色滤光层31的红色色阻单元311、绿色色阻单元312、及蓝色色阻单元313后被过滤成红、绿、蓝三原色光，从而最终实现彩色显示。
综上所述，本发明提供的一种QLED显示装置的制作方法，借助WOLED生产工艺，使用白光量子点层代替WOLED结构中的有机发光层，并在白光量子点层中添加紫外光引发剂，借助光罩及紫外光照射使子像素区域之间的量子点发生不可逆的淬灭，形成精细的量子点图形，从而消除相邻两个子像素区域之间的相互影响，可有效减小两个子像素区域之间距离，增加开口率，同时提升显示装置的色域及对比度，增强显示装置的色彩表现能力，制作方法简单，节约了成本与制程时间，所制作的QLED显示装置，与传统的TFT-LCD显示装置相比不需单独制作液晶盒，更薄更轻便，与传统的WOLED显示装置相比具有更长的寿命及更高的发光效率。
以上所述，对于本领域的普通技术人员来说，可以根据本发明的技术方案和技术构思作出其他各种相应的改变和变形，而所有这些改变和变形都应属于本发明权利要求的保护范围。

Claims (18)

  1. 一种QLED显示装置的制作方法，包括如下步骤：
    步骤1、提供TFT阵列基板，在所述TFT阵列基板上依次形成空穴传输层和电子阻挡层；
    所述TFT阵列基板包括TFT层、及形成于TFT层上的阳极层，所述TFT层包括数个阵列排布的TFT；
    步骤2、在所述电子阻挡层上涂布形成白光量子点层；所述白光量子点层内含有红色量子点、绿色量子点、蓝色量子点、及紫外光引发剂；
    步骤3、提供光罩，利用光罩对白光量子点层进行紫外光照射，所述光罩包括透光部分、及不透光部分，在紫外光照射过程中，在所述白光量子点层上对应位于所述透光部分下的区域内，紫外光引发剂受到紫外光作用后使得该区域内的红色、绿色、蓝色量子点发生不可逆的猝灭，从而形成子像素间隔区域，所述白光量子点层上对应位于所述不透光部分下的区域，未经紫外光照射则不受影响，从而形成由所述子像素间隔区域所间隔开的数个阵列排布的子像素区域，所述数个子像素区域与所述数个TFT一一对应；
    步骤4、在所述白光量子点层上形成电子传输/注入层，在所述电子传输/注入层上形成阴极层，得到QLED基板；
    步骤5、提供彩膜基板，将所述彩膜基板与QLED基板进行对组、封装，得到QLED显示装置。
  2. 如权利要求1所述的QLED显示装置的制作方法，其中，所述步骤2具体包括如下步骤：
    步骤21、将红色量子点、绿色量子点、蓝色量子点分别进行表面改性处理，然后将红色量子点、绿色量子点、蓝色量子点溶于溶剂中，并加入紫外光引发剂，从而配制得到含有红色量子点、绿色量子点、蓝色量子点、和紫外光引发剂的量子点混合溶液；
    步骤22、将所述量子点混合溶液采用旋涂、或狭缝涂布的方式涂布于所述电子阻挡层上，形成白光量子点层。
  3. 如权利要求1所述的QLED显示装置的制作方法，其中，所述步骤2具体包括如下步骤：
    步骤21’、将红色量子点、绿色量子点、蓝色量子点分别进行表面改性处理，使其表面含有极性或非极性的基团，且此时，红色量子点与蓝色 量子点的表面极性相同，红色量子点与绿色量子点的表面极性相反，然后将红色量子点、绿色量子点、蓝色量子点分别溶于与其极性相同的溶剂中，并分别加入紫外光引发剂，从而分别配制得到包含红色量子点和紫外光引发剂的红色量子点溶液、包含绿色量子点和紫外光引发剂的绿色量子点溶液、及包含蓝色量子点和紫外光引发剂的蓝色量子点溶液；
    步骤22’、采用旋涂、或狭缝涂布的方式按顺序依次将蓝色量子点溶液、绿色量子点溶液、及红色量子点溶液涂布于所述电子阻挡层上，形成白光量子点层。
  4. 如权利要求1所述的QLED显示装置的制作方法，其中，所述步骤2中形成白光量子点层中，所述蓝色量子点与绿色量子点的数量比例≥4:1，所述绿色量子点与红色量子点的数量比例≥1:1。
  5. 如权利要求1所述的QLED显示装置的制作方法，其中，所述红色量子点、绿色量子点、蓝色量子点均为由Ⅱ-Ⅵ族半导体材料、Ⅲ-Ⅴ族半导体材料、Ⅳ-Ⅵ族纳米半导体材料中的一种或多种所组成的具有核壳结构的量子点，所述红色量子点、绿色量子点、蓝色量子点的粒径均为1-10nm。
  6. 如权利要求1所述的QLED显示装置的制作方法，其中，所述紫外光引发剂为安息香双甲醚、或苯甲酰甲酸甲酯。
  7. 如权利要求1所述的QLED显示装置的制作方法，其中，所述步骤3中，紫外光照射时间为0.5-4h。
  8. 如权利要求1所述的QLED显示装置的制作方法，其中，所述步骤1中，采用旋涂或蒸镀的方式依次形成空穴传输层和电子阻挡层，所述空穴传输层的材料为PEDOT、或Poly-TPD，所述电子阻挡层的材料为TFB、或PVK。
  9. 如权利要求1所述的QLED显示装置的制作方法，其中，所述步骤4中，采用旋涂或蒸镀的方式形成电子传输/注入层，所述电子传输/注入层的材料为Alq3、TPBI、或ZnO纳米颗粒；采用蒸镀的方式形成所述阴极层，所述阴极层的材料为银、或镁。
  10. 如权利要求1所述的QLED显示装置的制作方法，其中，所述彩膜基板包括彩色滤光层，所述彩色滤光层包括交替排列的数个红色色阻单元、绿色色阻单元、及蓝色色阻单元。
  11. 一种QLED显示装置的制作方法，包括如下步骤：
    步骤1、提供TFT阵列基板，在所述TFT阵列基板上依次形成空穴传输层和电子阻挡层；
    所述TFT阵列基板包括TFT层、及形成于TFT层上的阳极层，所述 TFT层包括数个阵列排布的TFT；
    步骤2、在所述电子阻挡层上涂布形成白光量子点层；所述白光量子点层内含有红色量子点、绿色量子点、蓝色量子点、及紫外光引发剂；
    步骤3、提供光罩，利用光罩对白光量子点层进行紫外光照射，所述光罩包括透光部分、及不透光部分，在紫外光照射过程中，在所述白光量子点层上对应位于所述透光部分下的区域内，紫外光引发剂受到紫外光作用后使得该区域内的红色、绿色、蓝色量子点发生不可逆的猝灭，从而形成子像素间隔区域，所述白光量子点层上对应位于所述不透光部分下的区域，未经紫外光照射则不受影响，从而形成由所述子像素间隔区域所间隔开的数个阵列排布的子像素区域，所述数个子像素区域与所述数个TFT一一对应；
    步骤4、在所述白光量子点层上形成电子传输/注入层，在所述电子传输/注入层上形成阴极层，得到QLED基板；
    步骤5、提供彩膜基板，将所述彩膜基板与QLED基板进行对组、封装，得到QLED显示装置；
    其中，所述彩膜基板包括彩色滤光层，所述彩色滤光层包括交替排列的数个红色色阻单元、绿色色阻单元、及蓝色色阻单元；
    其中，所述紫外光引发剂为安息香双甲醚、或苯甲酰甲酸甲酯。
  12. 如权利要求11所述的QLED显示装置的制作方法，其中，所述步骤2具体包括如下步骤：
    步骤21、将红色量子点、绿色量子点、蓝色量子点分别进行表面改性处理，然后将红色量子点、绿色量子点、蓝色量子点溶于溶剂中，并加入紫外光引发剂，从而配制得到含有红色量子点、绿色量子点、蓝色量子点、和紫外光引发剂的量子点混合溶液；
    步骤22、将所述量子点混合溶液采用旋涂、或狭缝涂布的方式涂布于所述电子阻挡层上，形成白光量子点层。
  13. 如权利要求11所述的QLED显示装置的制作方法，其中，所述步骤2具体包括如下步骤：
    步骤21’、将红色量子点、绿色量子点、蓝色量子点分别进行表面改性处理，使其表面含有极性或非极性的基团，且此时，红色量子点与蓝色量子点的表面极性相同，红色量子点与绿色量子点的表面极性相反，然后将红色量子点、绿色量子点、蓝色量子点分别溶于与其极性相同的溶剂中，并分别加入紫外光引发剂，从而分别配制得到包含红色量子点和紫外光引发剂的红色量子点溶液、包含绿色量子点和紫外光引发剂的绿色量子点溶 液、及包含蓝色量子点和紫外光引发剂的蓝色量子点溶液；
    步骤22’、采用旋涂、或狭缝涂布的方式按顺序依次将蓝色量子点溶液、绿色量子点溶液、及红色量子点溶液涂布于所述电子阻挡层上，形成白光量子点层。
  14. 如权利要求11所述的QLED显示装置的制作方法，其中，所述步骤2中形成白光量子点层中，所述蓝色量子点与绿色量子点的数量比例≥4:1，所述绿色量子点与红色量子点的数量比例≥1:1。
  15. 如权利要求11所述的QLED显示装置的制作方法，其中，所述红色量子点、绿色量子点、蓝色量子点均为由Ⅱ-Ⅵ族半导体材料、Ⅲ-Ⅴ族半导体材料、Ⅳ-Ⅵ族纳米半导体材料中的一种或多种所组成的具有核壳结构的量子点，所述红色量子点、绿色量子点、蓝色量子点的粒径均为1-10nm。
  16. 如权利要求11所述的QLED显示装置的制作方法，其中，所述步骤3中，紫外光照射时间为0.5-4h。
  17. 如权利要求11所述的QLED显示装置的制作方法，其中，所述步骤1中，采用旋涂或蒸镀的方式依次形成空穴传输层和电子阻挡层，所述空穴传输层的材料为PEDOT、或Poly-TPD，所述电子阻挡层的材料为TFB、或PVK。
  18. 如权利要求11所述的QLED显示装置的制作方法，其中，所述步骤4中，采用旋涂或蒸镀的方式形成电子传输/注入层，所述电子传输/注入层的材料为Alq3、TPBI、或ZnO纳米颗粒；采用蒸镀的方式形成所述阴极层，所述阴极层的材料为银、或镁。
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