WO2018065483A1 - Circuit électronique de puissance - Google Patents

Circuit électronique de puissance Download PDF

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Publication number
WO2018065483A1
WO2018065483A1 PCT/EP2017/075247 EP2017075247W WO2018065483A1 WO 2018065483 A1 WO2018065483 A1 WO 2018065483A1 EP 2017075247 W EP2017075247 W EP 2017075247W WO 2018065483 A1 WO2018065483 A1 WO 2018065483A1
Authority
WO
WIPO (PCT)
Prior art keywords
solder
layer
power electronics
carrier
electronics circuit
Prior art date
Application number
PCT/EP2017/075247
Other languages
German (de)
English (en)
Inventor
Erich Mattmann
Sabine Bergmann
Original Assignee
Continental Automotive Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Continental Automotive Gmbh filed Critical Continental Automotive Gmbh
Publication of WO2018065483A1 publication Critical patent/WO2018065483A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
    • H01L21/4814—Conductive parts
    • H01L21/4871—Bases, plates or heatsinks
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Definitions

  • Soldered carrier wherein the carrier may be made of insulating material such as plastic or in particular ceramic.
  • materials with high specific conductivity are used, for example copper or aluminum.
  • the pairing of the component material and the material of the conductor track or of the carrier can cause mechanical stresses, due to the different thermal expansion coefficients.
  • there are strong temperature fluctuations which thus can lead to high voltages and in particular to detachment depending on the material pairing.
  • solder at least one power component of a power electronics circuit by means of a solder layer, which has spacer particles distributed in solder composition, and the solder layer, which connects the at least one power component to the carrier, is at least 100 ⁇ m thick. Due to the thickness, the shear stresses in the solder layer are reduced, which result from different thermal expansion of the carrier and the power component. It results in a lower stress at temperature changes compared to thinner solder layers, whereby the reliability of the solder joint is increased.
  • the solder layer or its thickness can be realized in a simple manner and relatively precisely during the production process.
  • the power electronics circuit described here has a carrier.
  • the carrier in particular comprises an insulator layer and at least one conductor track layer.
  • the insulator layer may be made of a ceramic material or a plastic.
  • the printed conductors are in particular copper or aluminum printed conductors.
  • the surface of the carrier is formed by the surfaces of the conductor tracks, as well as by the surface of the iso ⁇ lations stressess (at the locations where no conductor tracks are arranged). On this surface is at least one
  • the continuous solder layer is a solid body (ab ⁇ seen from a possibly occurring blowholes or gas proportion of not more than 1% and preferably not more than 1 L).
  • the continuous solder layer extends from the
  • the solder layer extends over the entire volume, which is defined by the surface of the carrier, the contact surface of the power device and the Side surfaces of the volume, which begin at the outer edges of the power component or the contact surface and aligned to the surface of the wearer.
  • the distance particles are distributed in the solder mass. In other words, is located in the space between the spacer particles solder mass with a volume fraction of at least 95% or 99% or 99, 9% (depending on the void fraction).
  • the distance particles float in the solder mass or are surrounded by a continuous mass of solder.
  • the solder mass and the spacer particles fill the entire area between the power component and the surface.
  • the solder layer has a thickness that is at least 100 ym.
  • the distance between the surface of the carrier and the power device is at least 100 ym, with the solder mass extending along the entire distance of the solder layer.
  • a thickness of the solder layer of at least 100 ⁇ m preferably at least 200 ⁇ m or 300 ⁇ m leads to an increase in height, which has a positive effect in favor of the service life.
  • the thickness of the solder layer is at least 100 ym or 200 ym min ⁇ least and preferably at least 250 ym or more.
  • a specific embodiment provides that the thickness of the solder layer is at least 300 .mu.m, specific From ⁇ EMBODIMENTS also a thickness of the solder layer of 300 ym ( ⁇ 10-25%) provide.
  • the spacer particles are provided with a mass fraction of at least 1% (based on the entire solder layer) in this. Preferably, the mass fraction is at least 1.8 or 2%, with specific embodiments providing a mass fraction of 2%. The percentages of the mass fraction can be provided with a tolerance of ⁇ 10% to ⁇ 25%.
  • the spacer particles are made of a metal or have a metal coating.
  • the spacer particles are in ⁇ particular solid.
  • the spacer particles may in particular be made of copper or of a solid alloy or may have a coating of a copper alloy.
  • the spacer particles have a surface that is well wettable with solder, as is the case with copper or nickel. The surface of the spacer particles may thus be made of nickel or the spacer particle is made of nickel. This also applies to nickel alloys.
  • the spacer particles are preferably the same size; in other words, the volume of the spacer particles does not vary by more than 50%, preferably 10% or more preferably 5%.
  • the spacer particles are in particular spherical or ⁇ We sentlichen spherical.
  • the volume of the spacer particles which deviates from a sphere inscribed in the spacer particles is not more than 30%, preferably 15% or particularly preferably 10 or 5% of the total volume of the spacer particles.
  • substantially spherical (relative to the spacer particles) may mean that the volume which deviates from an inscribed in the particle ball speaks not more than 10% or 5% of the total volume of the particle ent ⁇ .
  • the particle size is preferably at least 50 ym, at least 80 ym, at least 100 ym or at least 120 ym In the case of substantially spherical spacer particles, this corresponds to the ball diameter and may also correspond to the diameter of a ball inscribed in the corresponding particle.
  • the particle size may have an upper limit, for example, 300, 200, 150 or 125 ym.
  • all spacer particles have substantially the same particle size (corresponding to a maximum deviation of the size of all Particles of a solder layer of not more than 50%, 25%, 10% or 5%).
  • the mass fraction of the spacer particles in the solder layer is 2%.
  • the distance particles are in this case spherical and the ball ⁇ diameter is at least 80 ym and not more than 100 ym.
  • the spacer particles are made of copper.
  • the solder mass between distance particles is a common solder material, for example with 96.5% tin, 3% silver and 0.3% copper.
  • soldering materials can be used with a tin content of at least 90% or 95%. Preference is given to using solder compositions with an indium portion.
  • the carrier can be cold-gas sprayed and in particular have cold gas-sprayed layers.
  • the carrier may comprise a cold gas-sprayed conductive layer. This forms in particular a conductor track structure.
  • the cold gas sprayed layer ⁇ forms the surface.
  • the cold gas-sprayed conductive layer is in particular a layer of copper or of aluminum or of a copper alloy or an aluminum alloy.
  • the use of cold gas-sprayed layers simplifies production. At the same time allows, through the solder layer as described herein, that the cold gas sprayed layer (in particular at the locations where a Leis ⁇ processing component is soldered) a reduction in the mechanical stresses by different bathausdeh- .
  • the thickness of the solder layer in particular results in a stable structure, wherein the cold-gas-sprayed, conductive layer forms conductor tracks or a conductor track structure.
  • the carrier preferably has a cold gas-sprayed, electrically insulating layer. This is located on the side of the conductive layer which is opposite to the surface.
  • the kaltgasge- is injected, electrically conductive layer between the electrically insulating layer and assigns the at least one component being ⁇ .
  • the electrically conductive layer is arranged on the electrically insulating layer, wherein the components are applied to the electrically conductive layer by means of the solder joint described here.
  • Layer may alternatively be produced by a thermal spray process such as flame spraying.
  • the heat sink or the heat release layer is electrically conductive and in particular made of metal.
  • the electrically insulating layer is applied, on which in turn is the electrically conductive layer.
  • the electrically insulating layer is located between the heat sink and the conductive layer. Therefore, conductive heat sinks can also be provided, wherein the insulating layer serves to enable the electrically conductive layer to form a printed conductor structure (and is not short-circuited by the heat sink.)
  • Both the electrically insulating layer and the electrically conductive layer, ie the printed conductor layer, are
  • the electrically insulating layer may be made of a ceramic material.
  • the carrier has a heat sink or a heat release layer of ceramic or plastic, in particular of a non-conductive material.
  • the carrier may comprise a cold gas sprayed conductive layer, in particular the layer which forms the Lei ⁇ terbahn. This is formed on the heat sink.
  • the cold gas sprayed conductive layer forms the conductive path ⁇ structure. Furthermore, this forms a surface on which the at least one power component is soldered (by means of the solder layer described here). In this case, to ⁇ additional electrically insulating layer is necessary because of the cooling body itself does not conduct and the conductive layer may be applied as cold gas sprayed layer preferably directly on the heat sink.
  • FIG. 1 serves for a more detailed explanation of the solder connection described here.
  • FIG. 1 shows a detail of a power electronic circuit L with a carrier and a power component 4, which is mounted on the carrier by means of a solder layer 3.
  • the detail A shows the solder joint described here in more detail.
  • the power electronics circuit L comprises a heat sink 1 made of aluminum. On this a cold gas sprayed, iso-regulating ⁇ layer 2a is applied. On the electrically insulating layer 2a, in turn, an electrically conductive, kaltgasge ⁇ sprayed layer 2b is arranged.
  • the heat sink 1 can be made of aluminum, wherein the layer 2 a can be made of a ceramic material and the layer 2 b is made of copper. The layers 2a and 2b are cold-gas sprayed.
  • the cooler 1 can be made by means of an aluminum casting method .
  • the electrically conductive layer 2b (as the uppermost layer of the carrier) forms the surface 0.
  • the support comprises in particular ⁇ sondere the elements having the reference numerals 1, 2a and 2b, and further forming the surface from 0.
  • a power component 4 is mounted on the surface 0 via a solder layer 3.
  • the component 4 is in particular a semiconductor component and can be present, for example, as a packaged or unhoused chip.
  • the component 4 can be in particular a power ⁇ transistor or a power diode or a power TRIAC.
  • the solder layer 3 comprises spacer particles 3a, which are embedded in a solder mass 3b.
  • Figure 1 gives no sizes ⁇ relationships; rather, the particle size of the Abstandpumble 3a may be smaller than half, one third or one quarter of the layer thickness of the solder layer 3. Apart from that, the particle size at least a quarter, one third or half of the thickness of the solder layer 3 correspond.
  • the solder layer 3 obtained by melting of the solder mass 3b, the figure 1 also (re ⁇ sultierend in a taper of the solder layer to the component down) represents the conventional surface effect, which occurs when solder mass liquefied on a solder surface (corresponding to the surface 0) applied becomes.
  • solder layer 3 is continuous between the outer edges of the solder layer. Between the spacer particles 3a is solder mass. The space between the spacer particles is completely filled with solder mass 3b between the outer edges of the solder layer.
  • the heat sink 1 is made of aluminum in the example shown.
  • the solder layer thickness is about 300 ym. It corresponds to the distance between the power device 4 and the surface 0.
  • the spacer particles 3a are made of copper.
  • the spacer particles 3a are also spherical. In addition, the distance particles 3a have a size of 80 to 100 ym, which corresponds in particular to the ball diameter.
  • the mass fraction of the spacer particles 3a within the solder layer 3 is about 2%.
  • the power device 4 may be a MOSFET or an IGBT.
  • the power electronics circuit L is in particular a drive circuit for an electric drive of a motor vehicle or is an engine control of an electric machine which forms the generator, the starter or a start generator.

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)

Abstract

L'invention concerne un circuit électronique de puissance (L) muni d'un support (1+2a+2b) qui présente une surface (O). Sur le support (1+2a+2b) est brasé au moyen d'une couche de brasure continue (3) au moins un composant de puissance (4) (en particulier un composant semi-conducteur présent sous la forme d'une puce encapsulée ou non encapsulée). La couche de brasure (3) présente des particules d'écartement (33a) et une matière de brasage (3b). Les particules d'écartement (3a) sont réparties dans la matière de brasage (3b). La couche de brasure (3) présente une épaisseur d'au moins 100 µm. Cette épaisseur permet de réduire dans la couche de brasure (3) les contraintes de cisaillement qui sont produites par la différence entre la dilatation thermique du support (1+2a+2b) et celle du composant de puissance (4). On obtient ainsi par rapport à des couches de brasure plus minces une moindre contrainte en cas de variation de la température, et donc une augmentation de la fiabilité de l'assemblage par brasage On obtient en particulier pour des surfaces (O) pulvérisées à froid une rugosité relativement élevée, de sorte qu'une épaisseur de la couche de brasure (3) d'au moins 100 µm se traduit par une structure en hauteur qui a des effets positifs sur la durée de vie.
PCT/EP2017/075247 2016-10-07 2017-10-04 Circuit électronique de puissance WO2018065483A1 (fr)

Applications Claiming Priority (2)

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DE102016219565.4A DE102016219565A1 (de) 2016-10-07 2016-10-07 Leistungselektronikschaltung
DE102016219565.4 2016-10-07

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