WO2018056039A1

WO2018056039A1 - Substrate processing device and substrate processing method

Info

Publication number: WO2018056039A1
Application number: PCT/JP2017/031798
Authority: WO
Inventors: 波多野　章人; 豊秀林; 隆行郷原; 弘明高橋; 皓太宗徳
Original assignee: 株式会社Ｓｃｒｅｅｎホールディングス
Priority date: 2016-09-26
Filing date: 2017-09-04
Publication date: 2018-03-29
Also published as: JP2018056182A; JP6698489B2; KR20190021364A; TWI660401B; CN109478500A; CN109478500B; TW201816842A; KR102168056B1

Abstract

This substrate processing device comprises a support member, a hood, a gas supply unit, and a gas exhaust unit. The gas supply unit supplies a gas delivered from a gas supply opening to a space between an upper surface of a substrate and a ceiling surface from around the space. The gas exhaust unit discharges the gas between the upper surface of the substrate and the ceiling surface through a gas exhaust opening that is opened in the ceiling surface at a position opposing a center part of the upper surface of the substrate. The spacing between the upper surface of the substrate and the ceiling surface at the center part of the upper surface of the substrate is smaller than the spacing between the upper surface of the substrate and the ceiling surface at an outer peripheral part of the upper surface of the substrate.

Description

Substrate processing apparatus and substrate processing method

The present invention relates to a substrate processing apparatus and a substrate processing method for processing a substrate. Examples of substrates to be processed include semiconductor wafers, liquid crystal display substrates, plasma display substrates, FED (Field Emission Display) substrates, optical disk substrates, magnetic disk substrates, magneto-optical disk substrates, and photomask substrates. Substrates, ceramic substrates, solar cell substrates and the like are included.

In a manufacturing process of a semiconductor device or a liquid crystal display device, a substrate processing apparatus for processing a substrate such as a semiconductor wafer or a glass substrate for a liquid crystal display device is used. The substrate processing apparatus of Patent Document 1 includes a baking furnace that performs a PAB process in which a substrate coated with a resist is heated to remove a solvent contained in the resist film.

The baking furnace of Patent Document 1 includes a hot plate that heats while horizontally supporting a substrate, and a top plate that is disposed above the substrate. The gas supply port for discharging dry air is arranged outside the substrate, and the central exhaust port for discharging dry air is opened at a position facing the center of the upper surface of the substrate on the ceiling surface of the top plate. Yes.

Dry air discharged from the gas supply port flows between the upper surface of the substrate and the ceiling surface of the top plate toward the center of the substrate and is discharged to the central exhaust port. The solvent evaporated from the resist film by heating the substrate is discharged to the central exhaust port together with the dry air. The distance between the upper surface of the substrate and the ceiling surface of the top plate is constant from the outer periphery of the upper surface of the substrate to the center of the upper surface of the substrate.

JP 2011-175998 A

According to the research by the present inventors, it has been found that in the baking furnace of Patent Document 1, the processing speed may be reduced only at the center of the upper surface of the substrate. The present inventors consider that one of the causes is as follows.

That is, in the baking furnace of Patent Document 1, dry air discharged from the gas supply port flows between the upper surface of the substrate and the ceiling surface of the top plate toward the center of the substrate. As shown in FIG. 13, in the vicinity of the central exhaust port, dry air does not flow while contacting the upper surface of the substrate, but flows from the upper surface of the substrate toward the central exhaust port. For this reason, a staying region (a region surrounded by a two-dot chain line in FIG. 13) in which the gas fluidity is relatively low is generated immediately below the central exhaust port. This is considered to be one of the causes that reduce the processing speed.

Accordingly, one of the objects of the present invention is to improve the uniformity of substrate processing in a process of processing a substrate while forming an airflow flowing from the outer periphery of the substrate to the center of the substrate along the upper surface of the substrate. An apparatus and a substrate processing method are provided.

One embodiment of the present invention includes a support member that horizontally supports a substrate, a ceiling surface that faces the upper surface of the substrate supported by the support member, and a cylinder that surrounds the substrate supported by the support member. A distance between the upper surface of the substrate and the ceiling surface at the center of the upper surface of the substrate is larger than a distance between the upper surface of the substrate and the ceiling surface at the outer peripheral portion of the upper surface of the substrate. A hood formed so as to be narrow, and an air supply port arranged outside the substrate supported by the support member, the vertical passing through the center of the substrate supported by the support member An annular air supply port surrounding the line, and gas discharged from the air supply port is inserted into the space between the upper surface of the substrate supported by the support member and the ceiling surface from around the space. The air supply unit to be supplied and the ceiling surface A substrate processing apparatus, comprising: an exhaust port that opens at a position facing a central portion of the upper surface of the substrate; and an exhaust unit that exhausts gas between the upper surface of the substrate and the ceiling surface through the exhaust port. I will provide a.

According to this configuration, the gas discharged from the annular air supply port flows toward the center of the substrate between the upper surface of the substrate and the ceiling surface of the hood, and enters the exhaust port facing the center of the upper surface of the substrate. Discharged. Thereby, an airflow flowing toward the center of the substrate is formed above the substrate.

The distance between the upper surface of the substrate and the ceiling surface at the center of the upper surface of the substrate is narrower than the distance between the upper surface of the substrate and the ceiling surface at the outer periphery of the upper surface of the substrate. Therefore, the gas discharged from the air supply port is guided toward the center of the upper surface of the substrate by the ceiling surface. Thereby, it is possible to suppress or prevent the occurrence of a staying region having a relatively low gas fluidity directly under the exhaust port, and to improve the uniformity of processing of the substrate.

Furthermore, the distance between the upper surface of the substrate and the ceiling surface is not narrow everywhere, but only at the center of the upper surface of the substrate. If the distance between the upper surface of the substrate and the ceiling surface is narrow, the resistance applied to the gas supplied to the space between the upper surface of the substrate and the ceiling surface increases, and smooth gas flow in the space is obstructed. Can be done. Therefore, by locally narrowing the distance between the upper surface of the substrate and the ceiling surface, it is possible to suppress or prevent the staying area from occurring directly below the exhaust port while suppressing or preventing the occurrence of turbulence of the airflow.

The gas discharged from the air supply port may be a reactive gas that reacts with the substrate, or may be a gas that does not react with the substrate, such as inert gas, dry air, and clean air. It may be a gas. The annular air supply port may be a plurality of discharge ports arranged in the circumferential direction, or may be one slit continuous over the entire circumference. The discharge ports included in the plurality of discharge ports may be circular or elliptical discharge ports, or may be slots extending in the circumferential direction.

In the present embodiment, at least one of the following features may be added to the substrate processing apparatus.

The distance between the upper surface of the substrate and the ceiling surface decreases stepwise or continuously as it approaches the vertical line from the outer periphery of the upper surface of the substrate to the center of the upper surface of the substrate.

If the airflow is suddenly changed to the upper surface of the substrate, the airflow may be disturbed. According to this configuration, the gas flowing inward through the space between the upper surface of the substrate and the ceiling surface is stepped or continuous toward the upper surface of the substrate as the distance between the upper surface of the substrate and the ceiling surface decreases. Be guided to. Thereby, the airflow flowing toward the center of the substrate can be gradually brought closer to the upper surface of the substrate while suppressing or preventing the occurrence of turbulence of the airflow.

The ceiling surface includes an annular inclined portion extending obliquely downward toward the vertical line.

According to this configuration, the annular inclined portion extending obliquely downward toward the vertical line is provided on the ceiling surface. In other words, the distance between the upper surface of the substrate and the ceiling surface continuously decreases as it approaches the center of the upper surface of the substrate. The gas flowing inward through the space between the upper surface of the substrate and the ceiling surface is continuously guided toward the upper surface of the substrate by the inclined portion of the ceiling surface. Therefore, the gas flowing toward the center of the substrate can be gradually brought closer to the upper surface of the substrate while suppressing or preventing the occurrence of turbulence of the airflow.

The hood has an arcuate vertical cross section, and further includes an annular corner portion extending from an outer edge of the ceiling surface to an upper edge of the cylindrical surface.

According to this configuration, the annular corner portion extending from the outer edge of the ceiling surface to the upper edge of the cylindrical surface has an arcuate vertical cross section. When the vertical cross section of the corner portion is L-shaped, a staying area can occur in the corner portion. Therefore, by providing the hood with a corner portion having an arcuate vertical cross section, the occurrence of such a stay zone can be suppressed or prevented.

The distance between the upper surface of the substrate and the ceiling surface at the center of the upper surface of the substrate is narrower than the distance between the upper surface of the substrate and the ceiling surface at the outer peripheral portion of the upper surface of the substrate, and the thickness of the substrate Wider than.

According to this configuration, the distance between the center of the upper surface of the substrate and the ceiling surface is not only narrower than the distance between the outer peripheral portion of the upper surface of the substrate and the ceiling surface, but is wider than the thickness of the substrate. The exhaust port is opened at a position facing the center of the upper surface of the substrate on the ceiling surface. The vertical distance from the upper surface of the substrate to the exhaust port is wider than the thickness of the substrate. If the exhaust port is too close to the upper surface of the substrate, a large resistance is applied to the gas that is about to enter between the exhaust port and the substrate. Therefore, by separating the exhaust port from the upper surface of the substrate by an appropriate distance, it is possible to suppress or prevent the staying area from occurring immediately below the exhaust port while suppressing or preventing the occurrence of turbulence of the airflow.

The air supply port is disposed at a height above the upper surface of the substrate supported by the support member and below the ceiling surface, and is supported by the support member in plan view. Gas is discharged in the discharge direction toward the center of the upper surface of the substrate.

When the air supply port discharges gas vertically, the discharged gas changes its direction approximately 90 degrees and then flows inward toward the center of the substrate. According to this configuration, the air supply port is horizontally opposed to the space between the upper surface of the substrate and the ceiling surface. The gas discharged from the air supply port flows inward along the upper surface of the substrate without changing its direction at a large angle. Therefore, compared with the case where the air supply port discharges the gas vertically, the occurrence of the turbulence of the airflow at the outer peripheral portion of the substrate can be suppressed or prevented.

As long as it is a direction toward the center of the upper surface of the substrate in plan view, the discharge direction may be a horizontal direction, or an oblique direction inclined upward or downward with respect to a horizontal plane.

The substrate processing apparatus is disposed below the substrate supported by the support member, and further includes a heater that generates heat supplied to the substrate, and the air supply unit reacts with the substrate. A reaction gas supply unit configured to supply a reaction gas to the air supply port;

According to this configuration, the reactive gas that reacts with the substrate is discharged from the air supply port and supplied to the upper surface of the substrate. Thereby, the upper surface of the substrate is treated with the reactive gas. Further, the reaction gas is supplied to the upper surface of the substrate heated by the heater. Thereby, the reaction between the substrate and the reaction gas can be promoted.

The substrate processing apparatus further includes a wet processing unit that processes the substrate with a processing liquid, and a transport unit that transports the substrate from a dry processing unit including the support member and a hood to the wet processing unit.

According to this configuration, the dry processing step of processing the substrate without supplying the liquid to the substrate is executed in the dry processing unit including the support member and the hood. Thereafter, the transport unit transports the substrate from the dry processing unit to the wet processing unit. In the wet processing unit, a wet processing step of supplying a processing liquid to the substrate is executed. Therefore, both the dry processing step and the wet processing step can be performed with the same substrate processing apparatus. Furthermore, since the dry treatment process and the wet treatment process are performed in separate units, the complexity of each unit can be suppressed or prevented.

The substrate processing apparatus is an apparatus for removing a resist pattern located on a thin film pattern formed on an upper surface of the substrate by supplying a reactive gas that reacts with the substrate to the substrate.

According to this configuration, the space between the upper surface of the substrate and the ceiling surface is filled with the reactive gas discharged from the air supply port, and the reactive gas is uniformly supplied to each portion of the upper surface of the substrate including the central portion. . The resist pattern is vaporized or altered by the reaction between the resist and the reaction gas. Thus, the resist pattern can be removed from the thin film pattern forming the surface layer of the substrate.

The substrate processing apparatus is disposed below the substrate supported by the support member, and further includes a heater that generates heat supplied to the substrate, and the air supply unit supplies ozone gas to the air supply It includes an ozone gas supply unit that supplies the mouth.

According to this configuration, the ozone gas discharged from the air supply port is supplied to the upper surface of the substrate. The resist pattern is vaporized or altered by the reaction between the resist and ozone gas. Furthermore, ozone gas is supplied to the upper surface of the substrate heated by the heater. Thereby, the reaction between the resist and the ozone gas can be promoted, and the resist pattern can be reacted with the ozone gas uniformly in a short time.

Another embodiment of the present invention includes a supporting step of horizontally supporting a substrate with a supporting member, and a step executed in parallel with the supporting step, wherein the substrate is supported on the upper surface of the substrate supported by the supporting member. An opposing ceiling surface and a cylindrical surface surrounding the substrate supported by the support member, and the distance between the upper surface of the substrate and the ceiling surface at the center of the upper surface of the substrate is the upper surface of the substrate A cover step of disposing the substrate supported by the support member inside a hood formed so as to be narrower than an interval between the upper surface of the substrate and the ceiling surface at an outer periphery of the substrate; and An annular feed that is performed in parallel and is disposed outside the substrate supported by the support member and surrounds a vertical line passing through the center of the substrate supported by the support member. The gas discharged from the mouth An air supply step for supplying the space between the upper surface of the substrate supported by the support member and the ceiling surface from around the space, and a step executed in parallel with the support step, A substrate processing method comprising: exhausting a gas between an upper surface of the substrate and the ceiling surface through an exhaust port that opens at a position facing the center of the upper surface of the substrate on the ceiling surface. To do. According to this method, the same effect as described above can be obtained.

In the present embodiment, at least one of the following features may be added to the substrate processing method.

The distance between the upper surface of the substrate and the ceiling surface decreases stepwise or continuously as it approaches the vertical line from the outer periphery of the upper surface of the substrate to the center of the upper surface of the substrate. According to this method, the same effect as described above can be obtained.

The ceiling surface includes an annular inclined portion extending obliquely downward toward the vertical line. According to this method, the same effect as described above can be obtained.

The hood has an arcuate vertical cross section, and further includes an annular corner portion extending from an outer edge of the ceiling surface to an upper edge of the cylindrical surface. According to this method, the same effect as described above can be obtained.

The distance between the upper surface of the substrate and the ceiling surface at the center of the upper surface of the substrate is narrower than the distance between the upper surface of the substrate and the ceiling surface at the outer peripheral portion of the upper surface of the substrate, and the thickness of the substrate Wider than. According to this method, the same effect as described above can be obtained.

The air supply port is disposed at a height above the upper surface of the substrate supported by the support member and below the ceiling surface, and is supported by the support member in plan view. Gas is discharged in the discharge direction toward the center of the upper surface of the substrate. According to this method, the same effect as described above can be obtained.

The substrate processing method is a step that is performed in parallel with the supporting step, and the heating step of heating the substrate with the heat generated by a heater disposed below the substrate supported by the supporting member The air supply step includes a step of discharging a reaction gas that reacts with the substrate from the air supply port. According to this method, the same effect as described above can be obtained.

In the substrate processing method, the substrate is transported by a transport unit from a dry processing unit in which the support step, the cover step, the air supply step, and the exhaust step are performed to a wet processing unit that processes the substrate with a processing liquid. And a wet processing step of processing the substrate by the wet processing unit after the transporting step is executed. According to this method, the same effect as described above can be obtained.

The substrate processing method is a method of removing a resist pattern located on a thin film pattern formed on an upper surface of the substrate by supplying a reactive gas that reacts with the substrate to the substrate. According to this method, the same effect as described above can be obtained.

The substrate processing method is a step that is performed in parallel with the supporting step, and the heating step of heating the substrate with the heat generated by a heater disposed below the substrate supported by the supporting member The air supply step includes a step of discharging ozone gas from the air supply port. According to this method, the same effect as described above can be obtained.

The above-described or other objects, features, and effects of the present invention will be clarified by the following description of embodiments with reference to the accompanying drawings.

1 is a schematic plan view showing a schematic configuration of a substrate processing apparatus according to an embodiment of the present invention. It is process drawing which shows an example of the process of the board | substrate performed with a substrate processing apparatus. It is a schematic diagram which shows the cross section of the board | substrate before and after an example of the process of the board | substrate shown in FIG. 2 is performed. It is typical sectional drawing which shows the vertical cross section of a heating unit. It is a typical top view of food. It is a typical top view of a hot plate. It is the expanded sectional view which expanded a part of FIG. It is a schematic diagram which shows the air supply unit which supplies gas to a heating unit, and the exhaust unit which discharges | emits gas from a heating unit. It is a schematic diagram which shows an example of the state of a heating unit when the dry processing process shown in FIG. 2 is performed. It is a schematic diagram which shows an example of the state of a heating unit when the dry processing process shown in FIG. 2 is performed. It is a schematic diagram which shows an example of the state of a heating unit when the dry processing process shown in FIG. 2 is performed. It is a schematic diagram which shows an example of the state of a heating unit when the dry processing process shown in FIG. 2 is performed. It is a schematic diagram which shows an example of the state of a heating unit when the dry processing process shown in FIG. 2 is performed. It is a schematic diagram which shows an example of the state of a heating unit when the dry processing process shown in FIG. 2 is performed. It is typical sectional drawing for demonstrating the flow of the gas which flows into the center of a board | substrate from the outer periphery of a board | substrate along the upper surface of a board | substrate. It is typical sectional drawing which shows a part of vertical section of the heating unit which concerns on other embodiment of this invention. It is typical sectional drawing which shows a part of vertical section of the heating unit which concerns on other embodiment of this invention. It is typical sectional drawing for demonstrating the gas flow in a prior art.

FIG. 1 is a schematic plan view showing a schematic configuration of a substrate processing apparatus 1 according to an embodiment of the present invention.

The substrate processing apparatus 1 is a single-wafer type apparatus that processes a disk-shaped substrate W such as a semiconductor wafer one by one. The substrate processing apparatus 1 processes a plurality of load ports LP that respectively hold a plurality of carriers C that accommodate the substrates W, and a substrate W transported from the plurality of load ports LP with a processing fluid such as a processing liquid or a processing gas. A plurality of processing units 2.

The substrate processing apparatus 1 further includes a transport unit that transports the substrate W and a control device 3 that controls the substrate processing apparatus 1. The control device 3 is a computer including a memory 3m that stores information such as a program and a processor 3p that controls the substrate processing apparatus 1 in accordance with the information stored in the memory 3m.

The transfer unit includes an indexer robot IR, a shuttle SH, and a center robot CR arranged on a transfer path extending from the plurality of load ports LP to the plurality of processing units 2. The indexer robot IR transports the substrate W between the plurality of load ports LP and the shuttle SH. The shuttle SH transports the substrate W between the indexer robot IR and the center robot CR. The center robot CR transports the substrate W between the shuttle SH and the plurality of processing units 2. The center robot CR further transports the substrate W between the plurality of processing units 2. The thick arrows shown in FIG. 1 indicate the moving directions of the indexer robot IR and the shuttle SH.

The plurality of processing units 2 form four towers arranged at four positions separated horizontally. Each tower includes a plurality of processing units 2 stacked in the vertical direction. Four towers are arranged in two on each side of the transport path. The plurality of processing units 2 include a plurality of dry processing units 2D that process the substrate W while the substrates W are dried, and a plurality of wet processing units 2W that process the substrate W with the processing liquid. The two towers on the load port LP side are formed by a plurality of dry processing units 2D, and the remaining two towers are formed by a plurality of wet processing units 2W.

The dry processing unit 2D includes a dry chamber 4 provided with a loading / unloading port through which the substrate W passes, a shutter 5 that opens and closes the loading / unloading port of the dry chamber 4, and a processing gas while heating the substrate W in the dry chamber 4. A heating unit 8 for supplying the substrate W to the substrate W, a cooling unit 7 for cooling the substrate W heated by the heating unit 8 in the dry chamber 4, and an indoor transport mechanism 6 for transporting the substrate W in the dry chamber 4. .

The wet processing unit 2W includes a wet chamber 9 provided with a loading / unloading port through which the substrate W passes, a shutter 10 that opens and closes the loading / unloading port of the wet chamber 9, and a substrate W held horizontally in the wet chamber 9. A spin chuck 11 that rotates about a vertical rotation axis A <b> 1 that passes through the center of the substrate W and a plurality of nozzles that discharge a processing liquid toward the substrate W held by the spin chuck 11 are included.

The plurality of nozzles include a chemical nozzle 12 for discharging a chemical liquid and a rinsing liquid nozzle 13 for discharging a rinsing liquid. The control device 3 causes the spin motor of the spin chuck 11 to rotate the substrate W while holding the substrate W on the plurality of chuck pins of the spin chuck 11. In this state, the control device 3 causes the chemical liquid nozzle 12 or the rinsing liquid nozzle 13 to discharge liquid toward the upper surface of the substrate W. Thereby, the entire upper surface of the substrate W is covered with the liquid film. Thereafter, the control device 3 causes the spin chuck 11 to rotate the substrate W at a high speed to dry the substrate W.

FIG. 2 is a process diagram showing an example of the processing of the substrate W executed by the substrate processing apparatus 1. FIG. 3 is a schematic view showing a cross section of the substrate W before and after the example of the processing of the substrate W shown in FIG. The controller 3 is programmed to cause the substrate processing apparatus 1 to execute the following operations.

As shown on the left side of FIG. 3, the substrate W to be processed by the substrate processing apparatus 1 is subjected to an etching process for etching a thin film covered with a resist pattern PR to form a thin film pattern PF. It is. That is, the carrier C in which such a substrate W is accommodated is placed on the load port LP. As will be described below, in the substrate processing apparatus 1, a resist removing process is performed to remove the resist pattern PR located on the thin film pattern PF. The right side of FIG. 3 shows a cross section of the substrate W on which the resist removing process has been performed.

When the substrate W is processed by the substrate processing apparatus 1, the indexer robot IR, the shuttle SH, and the center robot CR transfer the substrate W in the carrier C placed on the load port LP to the dry processing unit 2D (FIG. 2). Step S1). In the dry processing unit 2D, a dry processing step of supplying ozone gas to the substrate W while heating the substrate W is performed (step S2 in FIG. 2). Thereafter, the center robot CR carries the substrate W in the dry processing unit 2D into the wet processing unit 2W (step S3 in FIG. 2).

In the wet processing unit 2W, a wet processing step of supplying a processing liquid to the upper surface of the substrate W is performed while rotating the substrate W (step S4 in FIG. 2). Specifically, a chemical solution supply step is performed in which the chemical solution is discharged to the chemical solution nozzle 12 toward the upper surface of the substrate W while rotating the substrate W. Thereafter, a rinsing liquid supply step is performed in which the rinsing liquid is discharged to the rinsing liquid nozzle 13 toward the upper surface of the substrate W while rotating the substrate W. Then, the drying process which dries the board | substrate W by rotating the board | substrate W at high speed is performed. Subsequently, the indexer robot IR, the shuttle SH, and the center robot CR transfer the substrate W in the wet processing unit 2W to the carrier C placed on the load port LP (step S5 in FIG. 2).

Next, the heating unit 8 will be described in detail.

FIG. 4 is a schematic cross-sectional view showing a vertical cross section (a cross section cut along a vertical plane) of the heating unit 8. FIG. 5 is a schematic plan view of the hood 30. FIG. 5 is a view of the hood 30 as seen in the direction of the arrow V shown in FIG. FIG. 6 is a schematic plan view of the hot plate 21. FIG. 7 is an enlarged cross-sectional view in which a part of FIG. 4 is enlarged. Hereinafter, a state where the hood 30 is located at the lower position (position shown in FIG. 4) will be described unless otherwise specified.

As shown in FIG. 4, the heating unit 8 includes a hot plate 21 that heats the substrate W while horizontally supporting it, a hood 30 that is disposed above the substrate W supported by the hot plate 21, and a hood 30. And a supporting base ring 27.

The heating unit 8 further includes a hood lift actuator 29 that lifts and lowers the hood 30 relative to the hot plate 21 and the base ring 27, an O-ring 28 that seals a gap between the hood 30 and the base ring 27, and the hot plate 21. A plurality of lift pins 24 that horizontally support the substrate W between the hood 30 and a lift raising / lowering actuator 26 that raises and lowers the plurality of lift pins 24.

The hot plate 21 includes a heater 22 that generates Joule heat, and a support member 23 that horizontally supports the substrate W and transmits heat of the heater 22 to the substrate W. The heater 22 and the support member 23 are disposed below the substrate W. The heater 22 is connected to a wiring (not shown) that supplies power to the heater 22. The heater 22 may be disposed below the support member 23 or may be disposed inside the support member 23.

As shown in FIGS. 4 and 6, the support member 23 of the hot plate 21 includes a disk-like base portion 23 b disposed below the substrate W, and a plurality of hemispheres protruding upward from the upper surface of the base portion 23 b. Projecting portion 23a and an annular flange portion 23c projecting outward from the outer peripheral surface of the base portion 23b. The upper surface of the base portion 23 b is parallel to the lower surface of the substrate W and has an outer diameter equal to or greater than the outer diameter of the substrate W. The plurality of projecting portions 23a are in contact with the lower surface of the substrate W at positions away from the upper surface of the base portion 23b. The plurality of protruding portions 23a are arranged at a plurality of positions in the upper surface of the base portion 23b so that the substrate W is horizontally supported. The substrate W is supported horizontally with the lower surface of the substrate W separated upward from the upper surface of the base portion 23b.

As shown in FIG. 4, the plurality of lift pins 24 are respectively inserted into the plurality of through holes penetrating the hot plate 21. Intrusion of fluid from the outside of the heating unit 8 into the through hole is prevented by the bellows 25 surrounding the lift pin 24. The heating unit 8 may include an O-ring that seals a gap between the outer peripheral surface of the lift pin 24 and the inner peripheral surface of the through hole instead of or in addition to the bellows 25. The lift pin 24 includes a hemispherical upper end portion that contacts the lower surface of the substrate W. The upper ends of the lift pins 24 are arranged at the same height.

The lift elevating actuator 26 includes an upper position where the upper ends of the plurality of lift pins 24 are positioned above the hot plate 21 (the position shown in FIG. 9A), and the upper ends of the plurality of lift pins 24 retracted inside the hot plate 21. The plurality of lift pins 24 are moved in the vertical direction between the lower position (the position shown in FIG. 4). The lift raising / lowering actuator 26 may be an electric motor or an air cylinder, or may be an actuator other than these. The same applies to other actuators such as the hood lift actuator 29.

When the lift elevating actuator 26 raises the lift pins 24 from the lower position to the upper position while the substrate W is supported by the hot plate 21, the lower surface of the substrate W is separated from the plurality of protrusions 23 a of the hot plate 21. , Contact a plurality of lift pins 24. On the contrary, when the lift elevating actuator 26 lowers the plurality of lift pins 24 from the upper position to the lower position while the substrate W is supported by the plurality of lift pins 24, the lower surface of the substrate W becomes the plurality of lift pins 24. And contact the plurality of protrusions 23a of the hot plate 21. In this way, the substrate W is transferred between the hot plate 21 and the plurality of lift pins 24.

The base ring 27 is disposed on the upper surface of the flange portion 23c of the hot plate 21. The base ring 27 surrounds the base portion 23 b with a space in the radial direction of the hot plate 21. The upper surface of the base ring 27 is disposed below the upper surface of the base portion 23b. The O-ring 28 is fitted in an annular groove that is recessed downward from the upper surface of the base ring 27. When the hood 30 is placed on the base ring 27, a sealed space SP that accommodates the substrate W supported by the hot plate 21 is formed by the hot plate 21, the hood 30, and the base ring 27.

The hood lift actuator 29 moves the hood 30 vertically between an upper position (position shown in FIG. 9A) and a lower position (position shown in FIG. 4). The upper position is a position where the lower surface of the hood 30 is separated from the upper surface of the base ring 27 so that the substrate W can pass between the lower surface of the hood 30 and the upper surface of the base ring 27. The lower position is a position where a gap between the lower surface of the hood 30 and the upper surface of the base ring 27 is sealed, and a sealed space SP that accommodates the substrate W supported by the hot plate 21 is formed.

The hood 30 has a circular upper plate 32 in a plan view that is disposed above the substrate W supported by the hot plate 21, a lower ring 34 having an inner diameter larger than the outer diameter of the substrate W, and a lower surface of the upper plate 32. And an annular plate-like seal 33 that seals the gap between the upper ring 34 and the upper surface of the lower ring 34, and a central block 31 that is inserted into a central through hole that penetrates the central portion of the upper plate 32. The central block 31 is supported by the upper plate 32, and the lower ring 34 is connected to the upper plate 32 via a plate-shaped seal 33. The upper plate 32 includes a plate portion 32 a having a lower surface parallel to the upper surface of the substrate W. The central block 31 protrudes downward from the lower surface of the plate portion 32a.

The inner surface of the hood 30 has a circular ceiling surface 41 in a plan view disposed above the substrate W, a cylindrical surface 43 having a diameter larger than the outer diameter of the substrate W, and the cylindrical surface 43 from the outer edge of the ceiling surface 41. And an annular corner portion 42 extending to the upper edge. The ceiling surface 41 has an outer diameter larger than the outer diameter of the substrate W. The corner part 42 has, for example, an L-shaped vertical cross section.

The ceiling surface 41 has a central horizontal portion 41a that is coaxial and horizontal with the vertical line A2 passing through the central portion of the substrate W, an annular central inclined portion 41b that extends obliquely upward from the outer edge of the central horizontal portion 41a, An annular central vertical portion 41c extending vertically upward from the outer edge of the inclined portion 41b and an annular outer horizontal portion 41d extending horizontally outward from the upper end of the central vertical portion 41c are included. The corner portion 42 extends from the outer edge of the outer horizontal portion 41 d to the upper edge of the cylindrical surface 43.

The substrate processing apparatus 1 includes an air supply unit that supplies a gas into the heating unit 8 and an exhaust unit that discharges the gas in the heating unit 8. The air supply unit includes a plurality of air supply ports 46 that discharge gas and supply paths 47 that guide the gas to each air supply port 46. The exhaust unit includes an exhaust port 44 through which the gas discharged from the plurality of air supply ports 46 flows, and an exhaust path 45 that guides the gas that has flowed into the exhaust port 44 to the outside of the heating unit 8.

The exhaust port 44 is opened at the central horizontal portion 41 a included in the inner surface of the hood 30. The exhaust port 44 is circular or elliptical. The exhaust port 44 faces the upper surface of the substrate W in the vertical direction only through the space. The exhaust port 44 is disposed above the air supply port 46. The exhaust passage 45 extends from the exhaust port 44 to the outer surface of the hood 30. The exhaust passage 45 is provided in the central block 31. The exhaust passage 45 penetrates the central block 31 in the vertical direction.

The air supply port 46 is opened by a cylindrical surface 43 included in the inner surface of the hood 30. The air supply port 46 is circular or elliptical. The air supply port 46 may be a slot extending in the circumferential direction. The plurality of air supply ports 46 are arranged at the same height. The air supply port 46 is disposed at a height above the upper surface of the substrate W and below the ceiling surface 41 of the hood 30. The plurality of air supply ports 46 are arranged at equal intervals in the circumferential direction of the hot plate 21.

As shown in FIGS. 4 and 5, the supply path 47 is connected to the plurality of upper flow paths 47 a extending from the outer surface of the hood 30 to the inside of the hood 30, and is connected to each upper flow path 47 a, and the upstream ring surrounding the vertical line A <b> 2. A passage 47b, a plurality of intermediate passages 47c extending downward from the upstream annular passage 47b, a downstream annular passage 47d connected to each intermediate passage 47c and surrounding the vertical line A2, and a plurality of air inlets from the downstream annular passage 47d A plurality of lower flow paths 47 e extending to 46.

The upper flow path 47 a and the upstream annular path 47 b are provided in the upper plate 32. The intermediate path 47 c is provided in the plate-shaped seal 33. The downstream annular passage 47 d and the lower passage 47 e are provided in the lower ring 34. The upstream annular passage 47 b and the downstream annular passage 47 d are partitioned from each other by the plate-shaped seal 33. The intermediate passage 47c extends downward from the upstream annular passage 47b to the downstream annular passage 47d. As shown in FIG. 5, the plurality of intermediate paths 47c are arranged at positions that do not overlap the plurality of upper flow paths 47a in plan view.

As shown in FIG. 4, the lower flow path 47e is arranged inside the downstream annular path 47d. The lower flow path 47e extends horizontally from the downstream annular path 47d to the air supply port 46. The air supply port 46 discharges the gas supplied from the lower flow path 47e in the horizontal discharge direction D1 toward the vertical line A2. As long as it is a direction toward the center of the upper surface of the substrate W in plan view, the ejection direction D1 may be an oblique direction inclined upward or downward with respect to the horizontal plane.

As shown in FIG. 7, the distance between the upper surface of the substrate W and the ceiling surface 41, that is, the vertical distance from the upper surface of the substrate W to the ceiling surface 41 is the narrowest at the center of the substrate W, and the outer periphery of the substrate W The largest in the department. More specifically, the distance Gc between the upper surface of the substrate W and the ceiling surface 41 at the center of the upper surface of the substrate W is the distance Ge between the upper surface of the substrate W and the ceiling surface 41 at the outer periphery of the upper surface of the substrate W. Narrower than. The gap Gc is wider than the thickness T1 of the substrate W and wider than the diameter D2 of the air supply port 46 corresponding to the length of the air supply port 46 in the vertical direction. The interval Gc may be equal to or less than the diameter D2 of the air supply port 46.

The distance Gc between the upper surface of the substrate W and the ceiling surface 41 at the center of the upper surface of the substrate W is equal to the vertical distance from the upper surface of the substrate W to the exhaust port 44. The interval Gc is narrower than the diameter D3 of the exhaust port 44 and narrower than the protruding amount of the central block 31, that is, the vertical distance G1 from the outer horizontal portion 41d to the central horizontal portion 41a. The radius R1 of the central block 31, that is, the radial distance R1 from the vertical line A2 to the outer end (upper end) of the central inclined portion 41b is the radial distance from the outer end of the central inclined portion 41b to the cylindrical surface 43. Shorter than R2. These dimensions are merely specific examples and are not limited thereto.

FIG. 8 is a schematic diagram showing an air supply unit that supplies gas to the heating unit 8 and an exhaust unit that discharges gas from the heating unit 8.

The air supply unit includes a first common pipe 55 that guides gas discharged from the plurality of air supply ports 46, and a plurality of second common pipes 56 that guide the gas supplied from the first common pipe 55 to the supply path 47. Including.

The exhaust unit includes a first exhaust pipe 60 that guides the gas discharged to the exhaust port 44, a second exhaust pipe 61 that guides the gas supplied from the first exhaust pipe 60, and a gas that flows through the second exhaust pipe 61. And an ozone filter 62 for removing ozone contained in the atmosphere.

The air supply unit includes a first ozone gas pipe 52 that guides the ozone gas generated by the ozone gas generation unit 51, a second ozone gas pipe 53 that guides the ozone gas supplied from the first ozone gas pipe 52 to the first common pipe 55, And an ozone gas supply valve 54 interposed in the second ozone gas pipe 53.

The air supply unit further includes a first nitrogen gas pipe 57 that guides nitrogen gas supplied from a nitrogen gas supply source, and a first nitrogen pipe that guides nitrogen gas supplied from the first nitrogen gas pipe 57 to the first common pipe 55. 2 a nitrogen gas pipe 58 and a nitrogen gas supply valve 59 interposed in the second nitrogen gas pipe 58.

Although not shown, the ozone gas supply valve 54 includes a valve body that forms a flow path, a valve element disposed in the flow path, and an actuator that moves the valve element. The same applies to the other valves. The actuator may be a pneumatic actuator or an electric actuator, or may be an actuator other than these. The control device 3 opens and closes the ozone gas supply valve 54 by controlling the actuator.

The ozone gas generation unit 51 is a unit that generates high-concentration ozone gas suitable for processing the substrate W. A specific example of the concentration of ozone contained in the ozone gas is 250 to 300 g / m ³ . The ozone gas generation unit 51 may be disposed in the substrate processing apparatus 1 or may be disposed outside the substrate processing apparatus 1. In the latter case, the ozone gas generation unit 51 may be disposed around the substrate processing apparatus 1 or may be disposed below (under the ground) a clean room where the substrate processing apparatus 1 is installed.

When the ozone gas supply valve 54 is opened, the ozone gas generated by the ozone gas generation unit 51 is heated through the first ozone gas pipe 52, the second ozone gas pipe 53, the first common pipe 55, and the second common pipe 56 in this order. It is supplied to the unit 8 and discharged from the plurality of air supply ports 46. Similarly, when the nitrogen gas supply valve 59 is opened, the nitrogen gas is heated through the first nitrogen gas pipe 57, the second nitrogen gas pipe 58, the first common pipe 55, and the second common pipe 56 in this order. It is supplied to the unit 8 and discharged from the plurality of air supply ports 46.

Ozone gas is discharged from the plurality of air supply ports 46 in a state where the heating unit 8 is closed, that is, in a state where the hood 30 is located at the lower position. The ozone gas discharged from the plurality of air supply ports 46 is discharged to the first exhaust pipe 60 through the exhaust port 44. The ozone gas in the first exhaust pipe 60 flows into the second exhaust pipe 61 and passes through the ozone filter 62. Thereby, the density | concentration of the ozone contained in the gas which flows through the 2nd exhaust pipe 61 falls. The gas that has passed through the ozone filter 62 is guided toward an exhaust facility provided in a factory where the substrate processing apparatus 1 is installed.

9A to 9F are schematic views showing an example of the state of the heating unit 8 when the dry processing step (step S2) shown in FIG. 2 is performed.

As shown in FIG. 9A, when the substrate W is loaded into the dry processing unit 2D, the shutter opening / closing actuator 63 positions the shutter 5 in the open position, and the hood lift actuator 29 and the lift lift actuator 26 are the hood 30 and a plurality of lift pins. 24 is positioned in the upper position. In this state, the center robot CR advances the hand H into the dry chamber 4 while supporting the substrate W with the hand H. Thereafter, the substrate W having the device forming surface facing upward is placed on the plurality of lift pins 24. The substrate W may be placed on the plurality of lift pins 24 by the hand H of the center robot CR, or may be placed on the plurality of lift pins 24 by the indoor transport mechanism 6 (see FIG. 1).

The center robot CR moves the substrate H on the hand H to the dry processing unit 2D and then moves the hand H out of the dry chamber 4. Thereafter, the shutter opening / closing actuator 63 moves the shutter 5 to the closed position, and closes the loading / unloading exit of the dry chamber 4. Further, as shown in FIG. 9B, the lift raising / lowering actuator 26 moves the plurality of lift pins 24 to the lower position, and the hood raising / lowering actuator 29 moves the hood 30 to the lower position. Thereby, the substrate W is supported by the hot plate 21. The hot plate 21 is maintained at a temperature higher than room temperature (for example, 100 ° C. or higher) before the substrate W is supported by the hot plate 21. When the substrate W is supported by the hot plate 21, heating of the substrate W is started.

Next, as shown in FIG. 9C, the ozone gas supply valve 54 is opened, and the plurality of air supply ports 46 start discharging ozone gas. The ozone gas flows along the upper surface of the substrate W from the plurality of air supply ports 46 toward the center of the substrate W. Thereby, a plurality of airflows flowing from the outer periphery of the upper surface of the substrate W toward the center of the upper surface of the substrate W are formed. The air in the sealed space SP is guided toward the exhaust port 44 by ozone gas and is discharged out of the sealed space SP through the exhaust port 44. Thereby, the sealed space SP is filled with ozone gas.

Furthermore, the ozone gas in the sealed space SP is guided toward the exhaust port 44 by the ozone gas discharged later, and is discharged out of the sealed space SP through the exhaust port 44. Therefore, the sealed space SP is continuously filled with ozone gas immediately after being discharged from the plurality of air supply ports 46. Concentration of the ozone gas discharged from the air supply port 46 is likely to decrease significantly in a short time. Therefore, ozone gas with a low concentration decrease, that is, ozone gas with high activity is continuously supplied to the upper surface of the substrate W.

FIG. 10 is a schematic cross-sectional view for explaining the flow of gas flowing from the outer periphery of the substrate W to the center of the substrate W along the upper surface of the substrate W. The ozone gas discharged from the air supply port 46 flows inward between the outer horizontal portion 41d of the hood 30 and the outer peripheral portion of the upper surface of the substrate W. Thereafter, the ozone gas flows inward between the upper surface of the substrate W and the inner surface of the hood 30 while being guided toward the upper surface of the substrate W by the central inclined portion 41 b of the hood 30. Subsequently, the ozone gas flows inward between the central horizontal portion 41 a of the hood 30 and the upper surface of the substrate W and is discharged to the exhaust port 44.

Thus, since the distance from the upper surface of the substrate W to the exhaust port 44 is short, the ozone gas flows along the center of the upper surface of the substrate W and is then discharged to the exhaust port 44. Therefore, it is difficult for gas to stay in the center of the upper surface of the substrate W, and the ozone gas present here is easily replaced with new ozone gas. Further, in the central inclined portion 41b and the central horizontal portion 41a, ozone gas flowing upward from the upper surface of the substrate W, that is, ozone gas with a small decrease in activity due to the reaction between the ozone gas and the resist and the temperature increase of the ozone gas is small. Since it is guided toward the substrate W, the processing speed at the center of the upper surface of the substrate W can be further increased.

When a predetermined time has elapsed since the ozone gas supply valve 54 was opened, the ozone gas supply valve 54 is closed and the discharge of ozone gas is stopped. Thereafter, as shown in FIG. 9D, the nitrogen gas supply valve 59 is opened, and the plurality of air supply ports 46 start to discharge nitrogen gas. The ozone gas in the sealed space SP is guided to the exhaust port 44 by the nitrogen gas and is discharged out of the sealed space SP through the exhaust port 44. Thereby, the ozone gas in the sealed space SP is replaced with nitrogen gas. When a predetermined time elapses after the nitrogen gas supply valve 59 is opened, the nitrogen gas supply valve 59 is closed and the discharge of nitrogen gas is stopped.

Next, as shown in FIG. 9E, the lift elevating actuator 26 moves the plurality of lift pins 24 to the upper position, and the hood elevating actuator 29 moves the hood 30 to the upper position. Further, as shown in FIG. 9F, the shutter opening / closing actuator 63 moves the shutter 5 to the open position. The substrate W on the hot plate 21 is lifted by a plurality of lift pins 24. The center robot CR receives the substrate W with the hand H after the substrate W is cooled by the cooling unit 7 (see FIG. 1). Thereafter, the center robot CR carries the substrate W on the hand H into the wet processing unit 2W.

As described above, in this embodiment, the distance Gc between the upper surface of the substrate W and the ceiling surface 41 at the center of the upper surface of the substrate W is such that the upper surface of the substrate W and the ceiling surface 41 at the outer periphery of the upper surface of the substrate W. It is narrower than the interval Ge. Therefore, the gas discharged from the air supply port 46 is guided toward the center of the upper surface of the substrate W by the ceiling surface 41. Thereby, it is possible to suppress or prevent the occurrence of a staying region having a relatively low gas fluidity directly under the exhaust port 44, and to improve the uniformity of processing of the substrate W.

Furthermore, the distance between the upper surface of the substrate W and the ceiling surface 41 is not narrow everywhere, but only at the center of the upper surface of the substrate W. If the distance between the upper surface of the substrate W and the ceiling surface 41 is narrow, the resistance applied to the gas supplied to the space between the upper surface of the substrate W and the ceiling surface 41 increases, and the smooth gas in the space Flow can be inhibited. Therefore, by locally reducing the distance between the upper surface of the substrate W and the ceiling surface 41, it is possible to suppress or prevent the staying area from occurring immediately below the exhaust port 44 while suppressing or preventing the occurrence of turbulence. it can.

Also, if the airflow is suddenly changed to the upper surface of the substrate W, the airflow may be disturbed. In the present embodiment, the gas flowing inward in the space between the upper surface of the substrate W and the ceiling surface 41 is stepped toward the upper surface of the substrate W as the distance between the upper surface of the substrate W and the ceiling surface 41 decreases. Guided continuously or continuously. Thereby, the airflow flowing toward the center of the substrate W can be gradually brought closer to the upper surface of the substrate W while suppressing or preventing the occurrence of turbulence of the airflow.

In the present embodiment, an annular central inclined portion 41b extending obliquely downward toward the vertical line A2 is provided on the ceiling surface 41. In other words, the distance between the upper surface of the substrate W and the ceiling surface 41 continuously decreases as the center of the upper surface of the substrate W is approached. The gas flowing inward through the space between the upper surface of the substrate W and the ceiling surface 41 is continuously guided toward the upper surface of the substrate W by the central inclined portion 41 b of the ceiling surface 41. Accordingly, the gas flowing toward the center of the substrate W can be gradually brought closer to the upper surface of the substrate W while suppressing or preventing the occurrence of turbulence of the airflow.

In the present embodiment, the distance Gc between the center portion of the upper surface of the substrate W and the ceiling surface 41 is not only narrower than the distance Ge between the outer peripheral portion of the upper surface of the substrate W and the ceiling surface 41, but also from the thickness T1 of the substrate W. Is also wide. The exhaust port 44 is opened at a position facing the center of the upper surface of the substrate W on the ceiling surface 41. The vertical distance from the upper surface of the substrate W to the exhaust port 44 is larger than the thickness T1 of the substrate W. If the exhaust port 44 is too close to the upper surface of the substrate W, a large resistance is applied to the gas that is about to enter between the exhaust port 44 and the substrate W. Therefore, by separating the exhaust port 44 from the upper surface of the substrate W by an appropriate distance, it is possible to suppress or prevent the staying area from occurring immediately below the exhaust port 44 while suppressing or preventing the occurrence of air current turbulence.

When the gas supply port 46 discharges the gas vertically, the discharged gas changes its direction approximately 90 degrees and then flows inward toward the center of the substrate W. In the present embodiment, the air supply port 46 is horizontally opposed to the space between the upper surface of the substrate W and the ceiling surface 41. The gas discharged from the air supply port 46 flows inward along the upper surface of the substrate W without changing its direction at a large angle. Therefore, compared with the case where the air supply port 46 discharges the gas vertically, it is possible to suppress or prevent the occurrence of turbulence of the airflow at the outer peripheral portion of the substrate W.

In this embodiment, the dry processing unit 2D performs the dry processing step of processing the substrate W without supplying the liquid to the substrate W. Thereafter, the center robot CR transports the substrate W from the dry processing unit 2D to the wet processing unit 2W. In the wet processing unit 2W, a wet processing step of supplying a processing liquid to the substrate W is executed. Therefore, both the dry processing step and the wet processing step can be executed by the same substrate processing apparatus 1. Furthermore, since the dry treatment process and the wet treatment process are performed in separate units, the complexity of each unit can be suppressed or prevented.

Ozone gas is an example of a reactive gas that reacts with the substrate W. In the present embodiment, ozone gas discharged from the air supply port 46 is supplied to the upper surface of the substrate W. The resist pattern PR is vaporized or altered by the reaction between the resist and ozone gas. Further, the ozone gas is supplied to the upper surface of the substrate W heated by the heater 22. Thereby, the reaction between the resist and the ozone gas can be promoted, and the resist pattern PR can be uniformly reacted with the ozone gas in a short time.

Other Embodiments The present invention is not limited to the contents of the above-described embodiments, and various modifications can be made.

For example, as shown in FIG. 11, the vertical cross section of the corner portion 42 included in the inner surface of the hood 30 is not limited to an L shape, and may be an arc shape or other shapes.

When the vertical cross section of the corner portion 42 is L-shaped, a staying area may occur in the corner portion 42. Therefore, by providing the hood 30 with the corner portion 42 having an arcuate vertical cross section, the occurrence of such a stay zone can be suppressed or prevented.

As shown in FIG. 12, the lower surface of the plate portion 32 a of the upper plate 32 may not be parallel to the upper surface of the substrate W. FIG. 12 shows an example in which the central block 31 is omitted and the central horizontal portion 41a and the outer inclined portion 41e are provided on the lower surface of the plate portion 32a. The outer inclined portion 41e extends obliquely downward from the outer edge of the ceiling surface 41 of the hood 30 to the outer edge of the central horizontal portion 41a.

If the distance Gc between the upper surface of the substrate W and the ceiling surface 41 at the center of the upper surface of the substrate W is smaller than the distance Ge between the upper surface of the substrate W and the ceiling surface 41 at the outer periphery of the upper surface of the substrate W, The distance between the upper surface of the substrate W and the ceiling surface 41 may not be the widest at the outer peripheral portion of the upper surface of the substrate W.

The distance Ge between the upper surface of the substrate W and the ceiling surface 41 at the outer peripheral portion of the upper surface of the substrate W may be constant over the entire circumference or may vary according to the position in the circumferential direction. The same applies to the distance between other portions of the upper surface of the substrate W excluding the central portion.

The air supply port 46 is not limited to the direction toward the center of the upper surface of the substrate W in a plan view, and the gas may be discharged in a vertical direction extending upward or downward from the air supply port 46. That is, the discharge direction D1 may be a vertical direction extending upward or downward from the air supply port 46.

The gas discharged from the air supply port 46 may be a gas other than ozone gas. For example, a gas containing a substance that reacts with a substrate W (including a base material of a substrate W such as a silicon wafer and a thin film formed on the base material) such as hydrogen fluoride or IPA (isopropyl alcohol) may be used. Dry air or clean air may be used.

Ozone gas, gas containing hydrogen fluoride, and gas containing IPA are examples of reactive gases that react with the substrate W, and dry air and clean air are examples of gases that do not react with the substrate W. The gas containing hydrogen fluoride may be a hydrofluoric acid vapor or a gas containing hydrofluoric acid vapor or mist and a carrier gas (for example, an inert gas). The same applies to the gas containing IPA.

The heater 22 may be omitted from the substrate processing apparatus 1. Similarly, the wet processing unit 2W may be omitted from the substrate processing apparatus 1.

The substrate processing apparatus 1 is not limited to an apparatus that processes a disk-shaped substrate W, and may be an apparatus that processes a polygonal substrate W.

Two or more of all the aforementioned configurations may be combined. Two or more of all the above steps may be combined.

This application corresponds to Japanese Patent Application No. 2016-187093 filed with the Japan Patent Office on September 26, 2016, the entire disclosure of which is incorporated herein by reference. Although the embodiments of the present invention have been described in detail, these are merely specific examples used to clarify the technical contents of the present invention, and the present invention is construed to be limited to these specific examples. The spirit and scope of the present invention should not be limited only by the appended claims.

1: substrate processing apparatus 2D: dry processing unit 2W: wet processing unit 8: heating unit 21: hot plate 22: heater 23: support member 30: hood 41: ceiling surface 41a of hood: central horizontal portion 41b of ceiling surface: ceiling Central inclined portion 41c: Vertical vertical portion 41d of the ceiling surface: Horizontal horizontal portion 41e of the ceiling surface: Outer inclined portion 42 of the ceiling surface: Corner portion 43 of the hood 43: The cylindrical surface 44 of the hood: Exhaust port 46: Air supply Port 51: Ozone gas generation unit 52: First ozone gas pipe (reactive gas supply unit, ozone gas supply unit)
53: Second ozone gas pipe (reactive gas supply unit, ozone gas supply unit)
54: Ozone gas supply valve (reactive gas supply unit, ozone gas supply unit)
55: 1st common piping 56: 2nd common piping 60: 1st exhaust piping 61: 2nd exhaust piping 62: Ozone filter A2: Vertical line CR: Center robot D1: Discharge direction Gc: Center part and ceiling of the upper surface of a board | substrate Distance between surfaces Ge: Distance between the outer periphery of the upper surface of the substrate and the ceiling surface IR: Indexer robot PF: Thin film pattern PR: Resist pattern SH: Shuttle T1: Substrate thickness W: Substrate

Claims

A support member for horizontally supporting the substrate;
A ceiling surface facing the upper surface of the substrate supported by the support member; and a cylindrical surface surrounding the substrate supported by the support member; and a center surface of the substrate at the center of the upper surface of the substrate. A hood formed such that the distance between the upper surface and the ceiling surface is narrower than the distance between the upper surface of the substrate and the ceiling surface at the outer periphery of the upper surface of the substrate;
An air supply port disposed outside the substrate supported by the support member, and including an annular air supply port surrounding a vertical line passing through a central portion of the substrate supported by the support member An air supply unit for supplying the gas discharged from the air supply port to the space between the upper surface of the substrate supported by the support member and the ceiling surface from around the space;
An exhaust unit that includes an exhaust port that opens at a position facing the center of the upper surface of the substrate on the ceiling surface, and that exhausts the gas between the upper surface of the substrate and the ceiling surface through the exhaust port. Substrate processing equipment.
The space between the upper surface of the substrate and the ceiling surface decreases stepwise or continuously as the distance from the outer peripheral portion of the upper surface of the substrate to the center of the upper surface of the substrate approaches the vertical line. Substrate processing equipment.
The substrate processing apparatus according to claim 2, wherein the ceiling surface includes an annular inclined portion extending obliquely downward toward the vertical line.
The hood has an arcuate vertical cross section, and further includes an annular corner portion extending from an outer edge of the ceiling surface to an upper edge of the cylindrical surface. Substrate processing equipment.
The distance between the upper surface of the substrate and the ceiling surface at the center of the upper surface of the substrate is narrower than the distance between the upper surface of the substrate and the ceiling surface at the outer peripheral portion of the upper surface of the substrate, and the thickness of the substrate The substrate processing apparatus according to any one of claims 1 to 4, which is wider than the substrate processing apparatus.
The air supply port is disposed at a height above the upper surface of the substrate supported by the support member and below the ceiling surface, and is supported by the support member in plan view. The substrate processing apparatus according to any one of claims 1 to 5, wherein gas is discharged in a discharge direction toward a central portion of the upper surface of the substrate.
The substrate processing apparatus is disposed below the substrate supported by the support member, and further includes a heater that generates heat supplied to the substrate,
7. The substrate processing apparatus according to claim 1, wherein the supply unit includes a reaction gas supply unit that supplies a reaction gas that reacts with the substrate to the supply port.
The substrate processing apparatus further includes a wet processing unit that processes the substrate with a processing liquid, and a transport unit that transports the substrate from a dry processing unit including the support member and a hood to the wet processing unit. 8. The substrate processing apparatus according to any one of items 7 to 7.
The substrate processing apparatus is an apparatus for removing a resist pattern located on a thin film pattern formed on an upper surface of the substrate by supplying a reactive gas that reacts with the substrate to the substrate. 9. The substrate processing apparatus according to any one of 1 to 8.
The substrate processing apparatus is disposed below the substrate supported by the support member, and further includes a heater that generates heat supplied to the substrate,
The substrate processing apparatus according to claim 9, wherein the air supply unit includes an ozone gas supply unit that supplies ozone gas to the air supply port.
A supporting step of horizontally supporting the substrate with a supporting member;
A step executed in parallel with the supporting step, wherein a ceiling surface facing an upper surface of the substrate supported by the supporting member and a cylindrical surface surrounding the substrate supported by the supporting member; And the distance between the upper surface of the substrate and the ceiling surface at the center of the upper surface of the substrate is smaller than the distance between the upper surface of the substrate and the ceiling surface at the outer peripheral portion of the upper surface of the substrate. A cover step of disposing the substrate supported by the support member inside the formed hood;
It is a process executed in parallel with the support process, and is arranged outside the substrate supported by the support member, and a vertical line passing through the center of the substrate supported by the support member An air supply step for supplying the gas discharged from the surrounding annular air supply port to the space between the upper surface of the substrate supported by the support member and the ceiling surface from around the space;
An exhaust port that is a process that is executed in parallel with the supporting process and that opens a gas between the upper surface of the substrate and the ceiling surface at a position facing the center of the upper surface of the substrate on the ceiling surface. The substrate processing method including an exhaust process for discharging through the substrate.
The distance between the upper surface of the substrate and the ceiling surface decreases stepwise or continuously as the vertical line is approached from an outer peripheral portion of the upper surface of the substrate to a central portion of the upper surface of the substrate. Substrate processing method.
The substrate processing method according to claim 12, wherein the ceiling surface includes an annular inclined portion extending obliquely downward toward the vertical line.
The hood has an arcuate vertical cross section, and further includes an annular corner portion extending from an outer edge of the ceiling surface to an upper edge of the cylindrical surface. Substrate processing method.
The distance between the upper surface of the substrate and the ceiling surface at the center of the upper surface of the substrate is narrower than the distance between the upper surface of the substrate and the ceiling surface at the outer peripheral portion of the upper surface of the substrate, and the thickness of the substrate The substrate processing method according to any one of claims 11 to 14, wherein the substrate processing method is wider.
The air supply port is disposed at a height above the upper surface of the substrate supported by the support member and below the ceiling surface, and is supported by the support member in plan view. The substrate processing method according to any one of claims 11 to 15, wherein gas is discharged in a discharge direction toward a central portion of the upper surface of the substrate.
The substrate processing method is a step that is performed in parallel with the supporting step, and the heating step of heating the substrate with the heat generated by a heater disposed below the substrate supported by the supporting member Further including
The substrate processing method according to any one of claims 11 to 16, wherein the air supply step includes a step of discharging a reaction gas that reacts with the substrate from the air supply port.
A transport step of transporting the substrate by a transport unit from a dry processing unit in which the support step, the cover step, the air supply step, and the exhaust step are performed to a wet processing unit that treats the substrate with a processing liquid;
The substrate processing method according to any one of claims 11 to 17, further comprising a wet processing step of processing the substrate by the wet processing unit after the carrying step is executed.
The substrate processing method is a method of removing a resist pattern located on a thin film pattern formed on an upper surface of the substrate by supplying a reactive gas that reacts with the substrate to the substrate. The substrate processing method according to any one of 11 to 18.
The substrate processing method is a step that is performed in parallel with the supporting step, and the heating step of heating the substrate with the heat generated by a heater disposed below the substrate supported by the supporting member Further including
The substrate processing method according to claim 19, wherein the air supply step includes a step of discharging ozone gas from the air supply port.