CN109478500B - Substrate processing method and substrate processing apparatus - Google Patents

Substrate processing method and substrate processing apparatus Download PDF

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Publication number
CN109478500B
CN109478500B CN201780045855.8A CN201780045855A CN109478500B CN 109478500 B CN109478500 B CN 109478500B CN 201780045855 A CN201780045855 A CN 201780045855A CN 109478500 B CN109478500 B CN 109478500B
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substrate
top surface
gas
gas supply
support member
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CN109478500A (en
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波多野章人
林豊秀
乡原隆行
高桥弘明
宗德皓太
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Screen Holdings Co Ltd
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Screen Holdings Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
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Abstract

The substrate processing apparatus includes: a support member, a cover, an air supply unit, and an air exhaust unit. The gas supply unit supplies gas ejected from the gas supply port to a space between the upper surface and the top surface of the substrate from the periphery of the space. The exhaust unit exhausts gas between the upper surface and the top surface of the substrate through an exhaust port that opens at a position where the top surface faces a center portion of the upper surface of the substrate. The distance between the upper surface of the substrate and the top surface of the substrate at the center of the upper surface of the substrate is narrower than the distance between the upper surface of the substrate and the top surface at the outer periphery of the upper surface of the substrate.

Description

Substrate processing method and substrate processing apparatus
Technical Field
The present invention relates to a substrate processing apparatus and a substrate processing method for processing a substrate. The substrate to be processed includes, for example, a semiconductor wafer, a substrate for a liquid crystal Display device, a substrate for a plasma Display device, a substrate for an FED (Field Emission Display), a substrate for an optical disk, a substrate for a magnetic disk, a substrate for an optical disk, a substrate for a photomask, a ceramic substrate, a substrate for a solar cell, and the like.
Background
In a manufacturing process of a semiconductor device, a liquid crystal display device, or the like, a substrate processing apparatus for processing a substrate such as a semiconductor wafer or a glass substrate for a liquid crystal display device is used. The substrate processing apparatus of patent document 1 includes: baking oven: which heats the substrate coated with the resist, performs a PAB step of removing the solvent included in the resist film.
The oven of patent document 1 includes: a heating plate that heats the substrate while supporting the substrate horizontally; and a top plate disposed above the substrate. The gas supply port for ejecting the dry air is located outside the substrate, and the central exhaust port for exhausting the dry air is opened at a position facing the center of the upper surface of the substrate on the top surface of the top plate.
The dry air ejected from the gas supply port flows between the upper surface of the substrate and the top surface of the top plate toward the center of the substrate, and is discharged to the center exhaust port. The solvent evaporated from the resist film by the heating of the substrate is discharged to the center exhaust port together with the dry air. The distance between the upper surface of the substrate and the top surface of the top plate is kept constant from the outer peripheral portion of the upper surface of the substrate to the central portion of the upper surface of the substrate.
Documents of the prior art
Patent literature
Patent document 1: japanese patent laid-open publication No. 2011-175998
Disclosure of Invention
[ problems to be solved by the invention ]
According to the studies of the present inventors, it is known that the oven of patent document 1 may cause a reduction in the processing speed at the center of the upper surface of the substrate. The present inventors considered one of the reasons for this as follows.
That is, in the oven of patent document 1, the dry air ejected from the gas supply port flows between the upper surface of the substrate and the top surface of the top plate toward the center of the substrate. As shown in fig. 13, in the vicinity of the center exhaust port, the dry air does not flow while contacting the upper surface of the substrate, but flows from the upper surface of the substrate toward the center exhaust port. Therefore, a stagnation region (a region surrounded by a two-dot chain line in fig. 13) in which the gas fluidity is relatively low is generated immediately below the center exhaust port. It is considered to be one of the causes of the reduction in the processing speed.
Accordingly, an object of the present invention is to provide a substrate processing apparatus and a substrate processing method capable of improving uniformity of substrate processing in a process of processing a substrate while forming a gas flow flowing from an outer periphery of the substrate toward a center of the substrate along an upper surface of the substrate.
[ means for solving problems ]
One embodiment of the present invention provides a substrate processing apparatus including: a support member supporting the substrate to be horizontal; a cover portion (hood) including a top surface facing the upper surface of the substrate supported by the support member and a cylindrical surface surrounding the substrate supported by the support member, the cover portion being formed such that an interval between the upper surface of the substrate and the top surface is narrower than an interval between the upper surface of the substrate and the top surface at an outer peripheral portion of the upper surface of the substrate; a gas supply unit including an annular gas supply port located outside the substrate supported by the support member and surrounding a vertical line passing through a center of the substrate supported by the support member, the gas supply unit supplying a gas ejected from the gas supply port to a space between an upper surface and the top surface of the substrate supported by the support member from a periphery of the space; and an exhaust unit including an exhaust port that opens at a position of the top surface facing a center portion of the upper surface of the substrate, and configured to exhaust gas between the upper surface of the substrate and the top surface through the exhaust port.
According to this configuration, the gas ejected from the annular gas supply port flows between the upper surface of the substrate and the top surface of the cover portion toward the center of the substrate, and is discharged toward the gas discharge port facing the center of the upper surface of the substrate. Thus, the airflow flowing toward the center of the substrate is formed above the substrate.
The distance between the upper surface of the substrate and the top surface of the substrate at the center of the upper surface of the substrate is narrower than the distance between the upper surface of the substrate and the top surface at the outer periphery of the upper surface of the substrate. Therefore, the gas ejected from the gas supply port is guided to the center portion of the upper surface of the substrate by the top surface. This can suppress or prevent the generation of a stagnation region in which the gas has relatively low fluidity directly below the exhaust port, and can improve the uniformity of the substrate processing.
Furthermore, the space between the upper surface and the top surface of the substrate is not narrow, but is narrow only in the center of the upper surface of the substrate. If the distance between the upper surface and the top surface of the substrate is narrow, resistance applied to the gas supplied to the space between the upper surface and the top surface of the substrate increases, which may prevent smooth gas flow in the space. Therefore, by locally narrowing the gap between the upper surface and the top surface of the substrate, the occurrence of turbulence in the gas flow can be suppressed or prevented, and the occurrence of a stagnation region directly below the gas discharge port can be suppressed or prevented.
The gas ejected from the gas supply port may be a reactive gas that reacts with the substrate, a gas that does not react with the substrate, such as an inert gas, dry air, or clean air, or a gas other than these gases. The annular air supply port may be a plurality of ejection ports arranged in the circumferential direction, or may be 1 slit continuous over the entire circumference. The ejection ports included in the plurality of ejection ports may be circular or oval ejection ports, or may be slits extending in the circumferential direction.
In the present embodiment, at least one of the following features may be added to the substrate processing apparatus.
The distance between the upper surface of the substrate and the top surface decreases stepwise or continuously as the distance from the outer peripheral portion of the upper surface of the substrate to the center portion of the upper surface of the substrate approaches the vertical line.
If the direction of the gas flow is abruptly changed toward the upper surface of the substrate, the gas flow is disturbed. According to this configuration, the gas flowing inward in the space between the upper surface and the top surface of the substrate is guided to the upper surface of the substrate in stages or continuously as the distance between the upper surface and the top surface of the substrate decreases. Thus, the gas flow flowing toward the center of the substrate can be gradually brought close to the upper surface of the substrate while suppressing or preventing the occurrence of disturbance of the gas flow.
The top surface includes an annular inclined portion extending obliquely downward toward the vertical line.
According to this configuration, the annular inclined portion extending obliquely downward toward the vertical line is provided on the top surface. In other words, the interval between the upper surface of the substrate and the top surface continuously decreases as approaching the center portion of the upper surface of the substrate. The gas flowing toward the inside in the space between the upper surface and the top surface of the substrate is continuously guided to the upper surface of the substrate by the inclined portion of the top surface. Therefore, the gas flow flowing toward the center of the substrate can be made to gradually approach the upper surface of the substrate while suppressing or preventing the occurrence of disturbance of the gas flow.
The cover portion further includes an annular corner portion having an arc-shaped vertical cross section and extending from an outer edge of the top surface to an upper edge of the cylindrical surface.
According to this configuration, the annular corner portion extending from the outer edge of the top surface to the upper edge of the cylindrical surface has an arc-shaped vertical cross section. When the vertical cross section of the corner portion is L-shaped, a retention area is generated in the corner portion. Therefore, by providing the corner portion having the arc-shaped vertical cross section in the cover portion, the occurrence of such a staying region can be suppressed or prevented.
The distance between the upper surface of the substrate and the top surface at the center of the upper surface of the substrate is narrower than the distance between the upper surface of the substrate and the top surface at the outer periphery of the upper surface of the substrate, and is wider than the thickness of the substrate.
According to this configuration, the distance between the center portion of the upper surface of the substrate and the top surface is not only narrower than the distance between the outer peripheral portion of the upper surface of the substrate and the top surface, but also wider than the thickness of the substrate. The exhaust port is opened at a position where the top surface faces the center portion of the upper surface of the substrate. The distance from the upper surface of the substrate to the exhaust port in the vertical direction is wider than the thickness of the substrate. When the exhaust port is excessively close to the upper surface of the substrate, a large resistance is applied to the gas to be introduced between the exhaust port and the substrate. Therefore, by separating the exhaust port from the upper surface of the substrate by an appropriate distance, the occurrence of a stagnation region directly below the exhaust port can be suppressed or prevented while suppressing or preventing the occurrence of turbulence in the gas flow.
The gas supply port is disposed at a height above the upper surface of the substrate supported by the support member and below the top surface, and discharges gas in a discharge direction toward a center portion of the upper surface of the substrate supported by the support member in a plan view.
When the gas supply port vertically discharges the gas, the discharged gas changes its direction by approximately 90 degrees and then flows inward toward the center of the substrate. According to this configuration, the air supply port horizontally faces the space between the upper surface and the top surface of the substrate. The gas ejected from the gas supply port flows along the upper surface of the substrate toward the inside without changing the direction at a large angle. Therefore, as compared with the case where the gas supply port ejects the gas vertically, the occurrence of turbulence in the gas flow at the outer peripheral portion of the substrate can be suppressed or prevented.
The discharge direction may be a horizontal direction, or may be an inclined direction inclined upward or downward with respect to the horizontal plane, as long as the direction is toward the center of the upper surface of the substrate in plan view.
The substrate processing apparatus further includes: a heater which is disposed below the substrate supported by the support member and generates heat to be supplied to the substrate; the gas supply unit includes a reaction gas supply unit that supplies a reaction gas that reacts with the substrate to the gas supply port.
According to this configuration, the reaction gas that reacts with the substrate is ejected from the gas supply port and supplied to the upper surface of the substrate. Thereby, the upper surface of the substrate is treated with the reaction gas. Further, the reaction gas is supplied to the upper surface of the substrate heated by the heater. This promotes the reaction between the substrate and the reaction gas.
The substrate processing apparatus further includes: a wet processing unit for processing the substrate with a processing liquid; and a conveying unit for conveying the substrate from a dry (dry) processing unit including the supporting member and the cover part to the wet (wet) processing unit.
According to this configuration, the dry processing step of processing the substrate without supplying the liquid to the substrate is performed in the dry processing unit including the support member and the cover portion. Subsequently, the transfer unit transfers the substrate from the dry processing unit to the wet processing unit. In the wet processing unit, a wet processing step of supplying a processing liquid to the substrate is performed. Thus, both dry and wet processing steps can be performed in the same substrate apparatus. Further, since the dry processing step and the wet processing step are performed in different units, complication of each unit can be suppressed or prevented.
The substrate processing apparatus is an apparatus that removes a resist pattern on a thin film pattern formed on an upper surface of a substrate by supplying a reaction gas that reacts with the substrate to the substrate.
According to this configuration, the space between the upper surface and the top surface of the substrate is filled with the reactive gas ejected from the gas supply port, and the reactive gas is uniformly supplied to each portion of the upper surface of the substrate including the center portion. The resist pattern is vaporized or deteriorated by the reaction of the resist with the reaction gas. Thus, the resist pattern can be removed from the thin film pattern forming the surface layer of the substrate.
The substrate processing apparatus further includes: a heater disposed below the substrate supported by the support member and generating heat to be supplied to the substrate; the gas supply unit includes an ozone gas supply unit that supplies ozone gas to the gas supply port.
According to this configuration, the ozone gas ejected from the gas supply port is supplied to the upper surface of the substrate. The resist pattern is gasified or deteriorated by the reaction of the resist with ozone gas. Further, ozone gas is supplied to the upper surface of the substrate heated by the heater. This promotes the reaction between the resist and the ozone gas, and allows the resist pattern to react uniformly with the ozone gas in a short time.
Another embodiment of the present invention provides a substrate processing method, including: a supporting step of supporting the substrate to be horizontal by using a supporting member; a covering step, executed in parallel with the supporting step, of disposing the substrate supported by the support member inside a cover portion that includes a top surface facing the upper surface of the substrate supported by the support member and a cylindrical surface surrounding the substrate supported by the support member, and is formed such that a distance between the upper surface of the substrate and the top surface in a center portion of the upper surface of the substrate is narrower than a distance between the upper surface of the substrate and the top surface in an outer peripheral portion of the upper surface of the substrate; a gas supply step, performed in parallel with the support step, of supplying gas, which is ejected from an annular gas supply port that surrounds a vertical line passing through a center portion of the substrate supported by the support member, to a space between an upper surface of the substrate supported by the support member and the top surface from a periphery of the space; and an exhaust step, executed in parallel with the support step, of exhausting gas between the upper surface of the substrate and the top surface through an exhaust port that is open at a position of the top surface that faces a center portion of the upper surface of the substrate. According to this method, the same effects as those described above can be obtained.
In the present embodiment, at least one of the following features may be added to the substrate processing method.
The distance between the upper surface of the substrate and the top surface decreases stepwise or continuously as the distance from the outer peripheral portion of the upper surface of the substrate to the center portion of the upper surface of the substrate approaches the vertical line. According to this method, the same effects as those described above can be obtained.
The top surface includes an annular inclined portion extending obliquely downward toward the vertical line. According to this method, the same effects as those described above can be obtained.
The cover portion further includes an annular corner portion having an arc-shaped vertical cross section and extending from an outer edge of the top surface to an upper edge of the cylindrical surface. According to this method, the same effects as those described above can be obtained.
The distance between the upper surface of the substrate and the top surface at the center of the upper surface of the substrate is narrower than the distance between the upper surface of the substrate and the top surface at the outer periphery of the upper surface of the substrate, and is wider than the thickness of the substrate. According to this method, the same effects as those described above can be obtained.
The gas supply port is disposed at a height above the upper surface of the substrate supported by the support member and below the top surface, and discharges gas in a discharge direction toward a center portion of the upper surface of the substrate supported by the support member in a plan view. According to this method, the same effects as those described above can be obtained.
The substrate processing method further includes: a heating step, performed in parallel with the supporting step, of heating the substrate by heat generated by a heater disposed below the substrate supported by the supporting member, the gas supply step including: and ejecting a reaction gas reacting with the substrate from the gas supply port. According to this method, the same effects as those described above can be obtained.
The substrate processing method further includes: a carrying step of carrying the substrate by a carrying unit from a dry processing unit that performs the supporting step, the covering step, the air supplying step, and the exhausting step to a wet processing unit that processes the substrate with a processing liquid; and a wet processing step of processing the substrate by the wet processing unit after the carrying step is performed. According to this method, the same effects as those described above can be obtained.
The substrate processing method is a method of removing a resist pattern on a thin film pattern formed on an upper surface of the substrate by supplying a reaction gas reacting with the substrate to the substrate. According to this method, the same effects as those described above can be obtained.
The substrate processing method further includes: a heating step, performed in parallel with the supporting step, of heating the substrate by heat generated by a heater disposed below the substrate supported by the supporting member, the gas supply step including: and ejecting ozone gas from the gas supply port. According to this method, the same effects as those described above can be obtained.
The above and still other objects, features and effects of the present invention will be apparent from the following description of the embodiments with reference to the accompanying drawings.
Drawings
Fig. 1 is a schematic plan view showing a schematic configuration of a substrate processing apparatus according to an embodiment of the present invention.
Fig. 2 is a process diagram showing an example of substrate processing performed by the substrate processing apparatus.
Fig. 3 is a schematic view showing cross sections of the substrate before and after the substrate processing shown in fig. 2 is performed.
Fig. 4 is a schematic cross-sectional view showing a vertical cross section of the heating unit.
Fig. 5 is a schematic plan view showing the hood portion.
Fig. 6 is a schematic top view of the heating plate.
Fig. 7 is an enlarged sectional view partially enlarging fig. 4.
Fig. 8 is a schematic diagram showing a gas supply unit that supplies gas to the heating unit and a gas exhaust unit that exhausts gas from the heating unit.
Fig. 9A is a schematic diagram showing an example of the state of the heating unit when the dry processing step shown in fig. 2 is performed.
Fig. 9B is a schematic diagram showing an example of the state of the heating unit when the dry processing step shown in fig. 2 is performed.
Fig. 9C is a schematic diagram showing an example of the state of the heating unit when the dry processing step shown in fig. 2 is performed.
Fig. 9D is a schematic diagram showing an example of the state of the heating unit when the dry processing step shown in fig. 2 is performed.
FIG. 9E is a schematic view showing an example of the state of the heating unit when the dry treatment step shown in FIG. 2 is performed.
FIG. 9F is a schematic view showing an example of the state of the heating unit when the dry treatment step shown in FIG. 2 is performed.
Fig. 10 is a schematic cross-sectional view for explaining the flow of gas flowing from the outer periphery of the substrate toward the center of the substrate along the upper surface of the substrate.
Fig. 11 is a schematic cross-sectional view showing a part of a vertical cross-section of a heating unit according to another embodiment of the present invention.
Fig. 12 is a schematic cross-sectional view showing a part of a vertical cross-section of a heating unit according to another embodiment of the present invention.
Fig. 13 is a schematic cross-sectional view for explaining a gas flow according to the conventional technique.
Detailed Description
Fig. 1 is a schematic plan view showing a schematic configuration of a substrate processing apparatus 1 according to an embodiment of the present invention.
The substrate processing apparatus 1 is a single-wafer type apparatus for processing a disk-shaped substrate W such as a semiconductor wafer one by one. The substrate processing apparatus 1 includes: a plurality of Load ports LP (Load Port) each holding a plurality of carriers C for accommodating substrates W; and a plurality of processing units 2 for processing the substrates W transferred from the plurality of load ports LP by using a processing fluid such as a processing liquid or a processing gas.
The substrate processing apparatus 1 further includes: a conveying unit for conveying the substrate W, and a control device 3 for controlling the substrate processing apparatus 1. The control device 3 is a computer including a memory 3m for storing information such as a program and a processor 3p for controlling the substrate processing apparatus 1 based on the information stored in the memory 3 m.
The conveying unit includes: an index robot IR, a shuttle SH, and a center robot CR disposed on a transfer path extending from the plurality of load ports LP to the plurality of processing units 2. The index robot IR transfers the substrate W between the plurality of load ports LP and the shuttle SH. The shuttle SH transports the substrate W between the index robot IR and the center robot CR. The center robot CR transports the substrate W between the shuttle SH and the plurality of processing units 2. The center robot CR also transports the substrate W between the plurality of processing units 2. The thick line arrows shown in fig. 1 indicate the moving directions of the index robot IR and the shuttle SH.
The plurality of processing units 2 form 4 towers respectively arranged at 4 positions horizontally separated. Each column includes a plurality of processing units 2 stacked in the vertical direction. The 4 towers are arranged 2 on each side of the conveying path. The plurality of processing units 2 includes: a plurality of dry processing units 2D for processing the substrate W while keeping the substrate W dry, and a plurality of wet processing units 2W for processing the substrate W with the processing liquid. The 2 towers on the load port LP side are formed of a plurality of dry processing units 2D, and the remaining 2 towers are formed of a plurality of wet processing units 2W.
The dry processing unit 2D includes: a dry chamber 4 provided with a loading/unloading port through which the substrate W passes; a shutter 5 for opening and closing the transfer port of the dry chamber 4; a heating unit 8 configured to supply a process gas to the substrate W while heating the substrate W in the dry chamber 4; a cooling unit 7 that cools the substrate W heated by the heating unit 8 within the dry chamber 4; and an indoor transfer mechanism 6 for transferring the substrate W in the dry chamber 4.
The wet processing unit 2W includes: a wet chamber 9 provided with a loading/unloading port through which the substrate W passes; a shutter 10 for opening and closing the carrying-in and carrying-out port of the wet chamber 9; a spin chuck 11 that rotates around a vertical rotation axis A1 passing through a center portion of the substrate W while holding the substrate W horizontal in the wet chamber 9; and a plurality of nozzles for discharging the processing liquid toward the substrate W held by the spin chuck 11.
The plurality of nozzles include a chemical solution nozzle 12 for discharging a chemical solution and a rinse solution nozzle 13 for discharging a rinse solution. The controller 3 rotates the substrate W by causing the spin motor of the spin chuck 11 to rotate while holding the substrate W on the plurality of chuck pins of the spin chuck 11. In this state, the controller 3 causes the chemical solution nozzle 12 or the rinse solution nozzle 13 to discharge the liquid toward the upper surface of the substrate W. Thereby, the entire upper surface of the substrate W is covered with the liquid film. Subsequently, the controller 3 rotates the substrate W at a high speed by the spin chuck 11 to dry the substrate W.
Fig. 2 is a process diagram showing an example of processing of the substrate W performed by the substrate processing apparatus 1. Fig. 3 is a schematic view showing a cross section of the substrate W before and after the example of processing the substrate W shown in fig. 2 is performed. The control device 3 is programmed to cause the substrate processing apparatus 1 to perform the following operations.
As shown in the left side of fig. 3, the substrate W processed by the substrate processing apparatus 1 is a substrate subjected to an etching process step of forming a thin film pattern PF by etching a thin film covered with the resist pattern PR. That is, the carrier C containing the substrate W is placed on the load port LP. As described below, the substrate processing apparatus 1 performs a resist removal step of removing the resist pattern PR located on the thin film pattern PF. The right side of fig. 3 shows a cross section of the substrate W on which the resist removal step has been performed.
When the substrate processing apparatus 1 processes the substrate W, the index robot IR, the shuttle SH, and the center robot CR transfer the substrate W placed in the carrier C of the load port LP to the dry processing unit 2D (step S1 in fig. 2). In the dry processing unit 2D, a dry processing step of supplying ozone gas to the substrate W while heating the substrate W is performed (step S2 in fig. 2). Subsequently, the center robot CR carries the substrate W in the dry processing unit 2D into the wet processing unit 2W (step S3 in fig. 2).
In the wet processing unit 2W, a wet processing step of supplying the processing liquid to the upper surface of the substrate W while rotating the substrate W is performed (step S4 in fig. 2). Specifically, a chemical solution supplying step of discharging the chemical solution from the chemical solution nozzle 12 toward the upper surface of the substrate W while rotating the substrate W is performed. Subsequently, a rinse liquid supply step of discharging the rinse liquid toward the upper surface of the substrate W from the rinse liquid nozzle 13 while rotating the substrate W is performed. Subsequently, a drying step of drying the substrate W by rotating the substrate W at a high speed is performed. Subsequently, the index robot IR, the shuttle SH, and the center robot CR transfer the substrate W in the wet processing unit 2W to the carrier C placed on the load port LP (step S5 in fig. 2).
Next, the heating unit 8 will be described in detail.
Fig. 4 is a schematic cross-sectional view showing a vertical cross-section (a cross-section taken along a vertical plane) of the heating unit 8. Fig. 5 is a schematic plan view of mask portion 30. Fig. 5 is a view of cover 30 viewed in the direction of arrow V shown in fig. 4. Fig. 6 is a schematic plan view of the heating plate 21. Fig. 7 is an enlarged partial cross-sectional view of fig. 4. Hereinafter, unless otherwise specified, a state in which cover portion 30 is located at the lower position (the position shown in fig. 4) will be described.
As shown in fig. 4, the heating unit 8 includes: a heating plate 21 that heats the substrate W while supporting the substrate W horizontally; a hood 30 disposed above the substrate W supported by the heater plate 21; and a bottom ring 27 supporting cover 30.
The heating unit 8 further includes: a cover lifting actuator 29 for lifting the cover 30 relative to the heating plate 21 and the bottom ring 27; an O-ring 28 that seals a gap between the cover 30 and the bottom ring 27; a plurality of lift pins 24 for horizontally supporting the substrate W between the heating plate 21 and the cover 30; and a lift pin lift actuator 26 for lifting the lift pins 24.
The heating plate 21 includes: a heater 22 that generates joule heat; and a support member 23 supporting the substrate W horizontally and transferring heat of the heater 22 to the substrate W. The heater 22 and the support member 23 are disposed below the substrate W. The heater 22 is connected to a wiring (not shown) for supplying electric power to the heater 22. The heater 22 may be disposed below the support member 23, or may be disposed inside the support member 23.
As shown in fig. 4 and 6, the support member 23 of the heating plate 21 includes: a disk-shaped base portion 23b disposed below the substrate W; a plurality of hemispherical protrusions 23a protruding upward from the upper surface of the base portion 23 b; and an annular flange portion 23c protruding outward from the outer peripheral surface of the base portion 23b. The upper surface of the base portion 23b is parallel to the lower surface of the substrate W and has an outer diameter larger than the outer diameter of the substrate W. The plurality of protruding portions 23a contact the lower surface of the substrate W at positions spaced upward from the upper surface of the base portion 23b. The plurality of protruding portions 23a are arranged at a plurality of positions on the upper surface of the base portion 23b so as to horizontally support the substrate W. The substrate W is horizontally supported in a state where the lower surface of the substrate W is upwardly spaced from the upper surface of the base portion 23b.
As shown in fig. 4, the plurality of lift pins 24 are inserted into the plurality of through holes penetrating the heating plate 21. Fluid is prevented from entering the through-hole from outside the heating unit 8 by a bellows 25 surrounding the lift pin 24. The heating unit 8 may include an O-ring that seals a gap between the outer circumferential surface of the lifter pin 24 and the inner circumferential surface of the through hole instead of or in addition to the bellows 25. The lift pins 24 include hemispherical upper end portions contacting the lower surface of the substrate W. The upper ends of the lift pins 24 are arranged at the same height.
The lift pin lift actuator 26 vertically moves the lift pins 24 between an upper position (position shown in fig. 9A) where the upper end portions of the lift pins 24 are located above the heater plate 21 and a lower position (position shown in fig. 4) where the upper end portions of the lift pins 24 are retracted into the heater plate 21. The lift pin lift actuator 26 may be an electric motor or an air cylinder, or may be an actuator other than these. The same applies to other actuators such as the cover lifting actuator 29.
When the lift pin lift actuator 26 lifts the lift pins 24 from the lower position to the upper position in a state where the substrate W is supported by the heater plate 21, the lower surface of the substrate W moves away from the protrusions 23a of the heater plate 21 and contacts the lift pins 24. In contrast, when the lift pin lift actuator 26 lowers the lift pins 24 from the upper position to the lower position in a state where the substrate W is supported by the lift pins 24, the lower surface of the substrate W is separated from the lift pins 24 and contacts the protrusions 23a of the heater plate 21. In this way, the substrate W is transferred between the heater plate 21 and the plurality of lift pins 24.
The bottom ring 27 is disposed on the upper surface of the flange portion 23c of the heater plate 21. The bottom ring 27 surrounds the base portion 23b at a space in the radial direction of the heating plate 21. The upper surface of the bottom ring 27 is located below the upper surface of the base portion 23b. The O-ring 28 fits into an annular groove recessed downward from the upper surface of the bottom ring 27. When the cover 30 is placed on the bottom ring 27, the closed space SP for accommodating the substrate W supported by the heater plate 21 is formed by the heater plate 21, the cover 30, and the bottom ring 27.
The cover lifting actuator 29 moves the cover 30 in the vertical direction between an upper position (position shown in fig. 9A) and a lower position (position shown in fig. 4). The upper position is a position where the lower surface of the cover 30 is spaced upward from the upper surface of the bottom ring 27 so that the substrate W can pass between the lower surface of the cover 30 and the upper surface of the bottom ring 27. The lower position is a position where a gap between the lower surface of the cover portion 30 and the upper surface of the bottom ring 27 is sealed to form a sealed space SP for accommodating the substrate W supported by the heater plate 21.
Cover 30 includes: an upper plate 32 which is circular in plan view and is disposed above the substrate W supported by the heating plate 21; a lower ring 34 having an inner diameter larger than an outer diameter of the substrate W; an annular plate seal 33 that seals a gap between the lower surface of the upper plate 32 and the upper surface of the lower ring 34; and a central block 31 inserted into a central through hole penetrating the central portion of the upper plate 32. The central block 31 is supported by an upper plate 32, and a lower ring 34 is connected to the upper plate 32 via a plate seal 33. The upper plate 32 includes a plate portion 32a having a lower surface parallel to the upper surface of the substrate W. The center block 31 protrudes downward from the lower surface of the plate portion 32a.
The inner surface of cover 30 includes: a top surface 41 having a circular shape in plan view and disposed above the substrate W; a cylindrical surface 43 having a diameter larger than the outer diameter of the substrate W; and an annular corner 42 extending from the outer edge of the top surface 41 to the upper edge of the cylindrical surface 43. The top surface 41 has an outer diameter larger than that of the substrate W. The corner 42 has an L-shaped vertical cross section, for example.
The top surface 41 includes: a central horizontal portion 41a which is coaxial with and horizontal to a vertical line A2 passing through the center of the substrate W; an annular central inclined portion 41b extending obliquely upward and outward from an outer edge of the central horizontal portion 41 a; an annular central vertical portion 41c extending vertically upward from the outer edge of the central inclined portion 41 b; and an annular outer horizontal portion 41d extending horizontally outward from the upper end of the central vertical portion 41 c. The corner portion 42 extends from the outer edge of the outer horizontal portion 41d to the upper edge of the cylindrical surface 43.
The substrate processing apparatus 1 includes: a gas supply unit that supplies gas to the inside of the heating unit 8; and an exhaust unit that exhausts the gas in the heating unit 8. The gas supply unit includes: a plurality of gas supply ports 46 for ejecting gas; and a supply path 47 for guiding the gas to each gas supply port 46. The exhaust unit includes: an exhaust port 44 into which gas ejected from the plurality of gas supply ports 46 flows; and an exhaust path 45 for guiding the gas flowing into the exhaust port 44 to the outside of the heating unit 8.
The exhaust port 44 opens at a central horizontal portion 41a included in the inner surface of the hood 30. The exhaust port 44 is circular or oval. The exhaust port 44 faces the upper surface of the substrate W in the vertical direction through a space. The exhaust port 44 is located above the supply port 46. An exhaust path 45 extends from the exhaust port 44 to the outer surface of the hood 30. The exhaust path 45 is provided in the center block 31. The exhaust passage 45 penetrates the center block 31 in the vertical direction.
Air supply port 46 opens in cylindrical surface 43 included in the inner surface of cover portion 30. The supply port 46 is circular or oval. The supply port 46 may also be a circumferentially extending slot. The plurality of air supply ports 46 are all disposed at the same height. Air supply port 46 is disposed at a height above the upper surface of substrate W and below top surface 41 of hood 30. The plurality of air supply ports 46 are arranged at equal intervals in the circumferential direction of the heater plate 21.
As shown in fig. 4 and 5, the supply path 47 includes: a plurality of upstream paths 47a extending from an outer surface of cowl portion 30 toward an interior of cowl portion 30; upstream circular paths 47b connected to the upstream paths 47a and surrounding the vertical line A2; a plurality of intermediate passages 47c extending downward from the upstream annular passage 47 b; a downstream annular path 47d connected to each intermediate path 47c and surrounding the vertical line A2; and a plurality of downstream passages 47e extending from the downstream annular passage 47d to the plurality of air supply ports 46.
The upstream path 47a and the upstream loop path 47b are provided in the upper plate 32. The intermediate path 47c is provided in the plate packing 33. The downstream annular passage 47d and the downstream passage 47e are provided in the lower ring 34. The upstream annular path 47b and the downstream annular path 47d are separated from each other by a plate seal 33. The intermediate passage 47c extends downward from the upstream annular passage 47b to the downstream annular passage 47 d. As shown in fig. 5, the intermediate paths 47c are disposed at positions not overlapping the upstream paths 47a in a plan view.
As shown in fig. 4, the downstream path 47e is disposed inside the downstream annular path 47 d. The downstream path 47e extends horizontally from the downstream annular path 47d to the air supply port 46. The gas supply port 46 discharges the gas supplied from the downstream passage 47e in the horizontal discharge direction D1 toward the vertical line A2. In the case of a direction toward the center of the upper surface of the substrate W in plan view, the discharge direction D1 may be an inclined direction inclined upward or downward with respect to the horizontal plane.
As shown in fig. 7, the distance between the upper surface of the substrate W and the top surface 41, that is, the distance in the vertical direction from the upper surface of the substrate W to the top surface 41 is the narrowest at the center of the substrate W and widest at the outer periphery of the substrate W. More specifically, the gap Gc between the upper surface of the substrate W and the top surface 41 at the center of the upper surface of the substrate W is narrower than the gap Ge between the upper surface of the substrate W and the top surface 41 at the outer peripheral portion of the upper surface of the substrate W. The gap Gc is wider than the thickness T1 of the substrate W and wider than the diameter D2 of the air supply port 46 corresponding to the length of the air supply port 46 in the vertical direction. The gap Gc may be equal to or smaller than the diameter D2 of the air supply port 46.
The distance Gc between the upper surface of the substrate W and the ceiling surface 41 at the center portion of the upper surface of the substrate W is equal to the distance in the vertical direction from the upper surface of the substrate W to the exhaust port 44. The gap Gc is narrower than the diameter D3 of the exhaust port 44 and narrower than the amount of protrusion of the central block 31, i.e., the distance G1 in the vertical direction from the outer horizontal portion 41D to the central horizontal portion 41 a. The radius R1 of the central block 31, i.e., the radial distance R1 from the vertical line A2 to the outer end (upper end) of the central inclined portion 41b is shorter than the radial distance R2 from the outer end of the central inclined portion 41b to the cylindrical surface 43. These dimensions are merely specific examples, and are not limited thereto.
Fig. 8 is a schematic diagram showing a gas supply unit that supplies gas to the heating unit 8 and a gas exhaust unit that exhausts gas from the heating unit 8.
The air supply unit includes: a1 st common pipe 55 for introducing gas to be ejected from the plurality of gas supply ports 46; and a2 nd common pipe 56 for guiding the gas supplied from the 1 st common pipe 55 to the supply path 47.
The exhaust unit includes: a1 st exhaust pipe 60 for guiding the gas discharged to the exhaust port 44; a2 nd exhaust pipe 61 for guiding the gas supplied from the 1 st exhaust pipe 60; and an ozone filter 62 for removing ozone contained in the gas flowing through the 2 nd exhaust pipe 61.
The air supply unit includes: a1 st ozone gas pipe 52 for introducing the ozone gas generated in the ozone gas generation unit 51; a2 nd ozone gas pipe 53 for introducing the ozone gas supplied from the 1 st ozone gas pipe 52 to the 1 st common pipe 55; and an ozone gas supply valve 54 attached to the 2 nd ozone gas pipe 53.
The air supply unit further includes: a1 st nitrogen gas pipe 57 for introducing nitrogen gas supplied from a nitrogen gas supply source; a2 nd nitrogen pipe 58 for introducing nitrogen gas supplied from the 1 st nitrogen pipe 57 to the 1 st common pipe 55; and a nitrogen gas supply valve 59 attached to the 2 nd nitrogen gas pipe 58.
Although not shown, the ozone gas supply valve 54 includes: the valve includes a valve body forming a flow path, a valve element disposed in the flow path, and an actuator moving the valve element. The same applies to the other valves. The actuator may be a pneumatic actuator or an electric actuator, or may be an actuator other than these actuators. The control device 3 opens and closes the ozone gas supply valve 54 by controlling the actuator.
The ozone gas generation unit 51 is a unit that generates ozone gas at a high concentration suitable for the treatment of the substrate W. Specific example of the concentration of ozone contained in the ozone gas is 250 to 300g/m 3 . The ozone gas generation unit 51 may be disposed in the substrate processing apparatus 1 or may be disposed outside the substrate processing apparatus 1. In the latter case, the ozone gas generation unit 51 may be disposed around the substrate processing apparatus 1, or may be disposed below (on the floor) of a clean room in which the substrate processing apparatus 1 is installed.
When the ozone gas supply valve 54 is opened, the ozone gas generated in the ozone gas generation unit 51 is supplied to the heating unit 8 through the 1 st ozone gas pipe 52, the 2 nd ozone gas pipe 53, the 1 st common pipe 55, and the 2 nd common pipe 56 in this order, and is discharged from the plurality of gas supply ports 46. Similarly, when the nitrogen gas supply valve 59 is opened, nitrogen gas is supplied to the heating unit 8 through the 1 st nitrogen gas pipe 57, the 2 nd nitrogen gas pipe 58, the 1 st common pipe 55, and the 2 nd common pipe 56 in this order, and is discharged from the plurality of gas supply ports 46.
The ozone gas is ejected from the plurality of gas supply ports 46 in a state where the heating unit 8 is closed, that is, in a state where the cover portion 30 is located at the lower position. The ozone gas discharged from the plurality of gas supply ports 46 is discharged to the 1 st exhaust pipe 60 through the exhaust port 44. The ozone gas in the 1 st exhaust pipe 60 flows through the 2 nd exhaust pipe 61 and passes through the ozone filter 62. This reduces the concentration of ozone contained in the gas flowing through the 2 nd exhaust pipe 61. The gas passing through the ozone filter 62 is guided toward an exhaust facility provided in a factory in which the substrate processing apparatus 1 is installed.
Fig. 9A to 9F are schematic diagrams showing an example of the state of the heating unit 8 when the dry processing step (step S2) shown in fig. 2 is performed.
As shown in fig. 9A, when the substrate W is carried into the dry processing unit 2D, the shutter opening/closing actuator 63 positions the shutter 5 at the open position, and the cover portion lifting actuator 29 and the lifting pin lifting actuator 26 position the cover portion 30 and the plurality of lifting pins 24 at the upper position. In this state, the center robot CR advances the hand H into the dry chamber 4 while supporting the substrate W with the hand H. Subsequently, the substrate W having the device formation surface, i.e., the surface facing upward, is placed on the plurality of lift pins 24. The substrate W may be placed on the plurality of lift pins 24 by the hand H of the center robot CR, or may be placed on the plurality of lift pins 24 by the indoor transfer mechanism 6 (see fig. 1).
The center robot CR transfers the substrate W on the hand H to the dry processing unit 2D, and then moves the hand H out of the dry chamber 4. Subsequently, the shutter opening/closing actuator 63 moves the shutter 5 to the closing position to close the carrying-in/carrying-out port of the dry chamber 4. Further, as shown in fig. 9B, the lift pin lift actuator 26 moves the plurality of pins 24 to the lower position, and the cover lift actuator 29 moves the cover 30 to the lower position. Thereby, the substrate W is supported by the heater plate 21. The heater plate 21 is maintained at a temperature higher than room temperature (e.g., 100 ℃ or higher) before supporting the substrate W on the heater plate 21. When the substrate W is supported by the heating plate 21, heating of the substrate W is started.
Next, as shown in fig. 9C, the ozone gas supply valve 54 is opened, and the plurality of gas supply ports 46 start to discharge ozone gas. The ozone gas flows along the upper surface of the substrate W from the plurality of gas supply ports 46 toward the center of the substrate W. Thereby, a plurality of airflows are formed that flow from the outer periphery of the upper surface of the substrate W toward the center of the upper surface of the substrate W. The air in the sealed space SP is guided to the exhaust port 44 by the ozone gas, and is discharged to the outside of the sealed space SP through the exhaust port 44. Thereby, the closed space SP is filled with ozone gas.
Further, the ozone gas in the sealed space SP is guided to the exhaust port 44 by the ozone gas which is subsequently discharged, and is discharged to the outside of the sealed space SP through the exhaust port 44. Therefore, the sealed space SP is continuously filled with the ozone gas immediately after being discharged from the plurality of air supply ports 46. The ozone gas ejected from gas supply port 46 is likely to be reduced in concentration significantly in a short time. Therefore, the ozone gas having a small concentration decrease, that is, the ozone gas having a high activity is continuously supplied to the upper surface of the substrate W.
Fig. 10 is a schematic cross-sectional view for explaining the flow of gas flowing from the outer periphery of the substrate W toward the center of the substrate W along the upper surface of the substrate W. The ozone gas ejected from the gas supply port 46 flows inward between the outer horizontal portion 41d of the hood 30 and the outer peripheral portion of the upper surface of the substrate W. Subsequently, the ozone gas flows inward between the upper surface of the substrate W and the inner surface of the hood portion 30 while being guided to the upper surface of the substrate W by the central inclined portion 41b of the hood portion 30. Then, the ozone gas flows inward between the central horizontal portion 41a of the hood portion 30 and the upper surface of the substrate W, and is discharged to the exhaust port 44.
Since the distance from the upper surface of the substrate W to the exhaust port 44 is short, the ozone gas flows along the central portion of the upper surface of the substrate W and is then discharged to the exhaust port 44. Therefore, the gas is less likely to stay in the central portion of the upper surface of the substrate W, and the ozone gas present therein is easily replaced with new ozone gas. Further, in the central inclined portion 41b and the central horizontal portion 41a, the ozone gas flowing in the positions upwardly spaced from the upper surface of the substrate W, that is, the ozone gas having a small activity reduction width due to the reaction between the ozone gas and the resist or the temperature increase of the ozone gas, is guided to the substrate W, so that the processing speed at the center portion of the upper surface of the substrate W can be further increased.
When a predetermined time has elapsed since the ozone gas supply valve 54 was opened, the ozone gas supply valve 54 is closed, and the discharge of ozone gas is stopped. Subsequently, as shown in fig. 9D, the nitrogen gas supply valve 59 is opened, and the plurality of gas supply ports 46 start to eject nitrogen gas. The ozone gas in the sealed space SP is guided to the exhaust port 44 by the nitrogen gas, and is discharged to the outside of the sealed space SP through the exhaust port 44. Thereby, the ozone gas in the closed space SP is replaced with the nitrogen gas. When a predetermined time has elapsed after the nitrogen gas supply valve 59 was opened, the nitrogen gas supply valve 59 was closed, and the nitrogen gas discharge was stopped.
Next, as shown in fig. 9E, the lift pin lift actuator 26 moves the plurality of lift pins 24 to the upper position, and the cover lift actuator 29 moves the cover 30 to the upper position. Further, as shown in fig. 9F, the shutter opening/closing actuator 63 moves the shutter 5 to the open position. The substrate W on the heating plate 21 is raised by the plurality of lift pins 24. The center robot CR cools the substrate W by the cooling unit 7 (see fig. 1), and then receives the substrate W by the hand H. Subsequently, the center robot CR carries the substrate W on the hand H into the wet processing unit 2W.
As described above, in the present embodiment, the distance Gc between the upper surface of the substrate W and the top surface 41 at the center of the upper surface of the substrate W is narrower than the distance Ge between the upper surface of the substrate W and the top surface 41 at the outer peripheral portion of the upper surface of the substrate W. Therefore, the gas ejected from gas supply port 46 is guided to the center of the upper surface of substrate W by top surface 41. This can suppress or prevent the generation of a stagnation region in which the gas has relatively low fluidity directly below the exhaust port 44, and can improve the uniformity of the processing of the substrate W.
Further, the interval between the upper surface of the substrate W and the top surface 41 is narrow, and gold is narrow in the center of the upper surface of the substrate W. If the distance between the upper surface of the substrate W and the ceiling surface 41 is narrow, resistance of the gas supplied to the space between the upper surface of the substrate W and the ceiling surface 41 increases, and smooth gas flow in the space is inhibited. Therefore, by locally narrowing the gap between the upper surface of the substrate W and the top surface 41, the occurrence of turbulence in the gas flow can be suppressed or prevented, and the occurrence of a stagnation region directly below the exhaust port 44 can be suppressed or prevented.
Further, if the gas flow is abruptly changed in direction toward the upper surface of the substrate W, the gas flow is disturbed. In the present embodiment, the gas flowing inward in the space between the upper surface of the substrate W and the ceiling surface 41 is guided to the upper surface of the substrate W in stages or continuously as the distance between the upper surface of the substrate W and the ceiling surface 41 decreases. This makes it possible to gradually bring the gas flow flowing toward the center of the substrate W close to the upper surface of the substrate W while suppressing or preventing the occurrence of disturbance of the gas flow.
In the present embodiment, a ring-shaped central inclined portion 41b extending obliquely downward toward the vertical line A2 is provided on the top surface 41. In other words, the distance between the upper surface of the substrate W and the top surface 41 continuously decreases as the center of the upper surface of the substrate W approaches. The gas flowing inward through the space between the upper surface of the substrate W and the top surface 41 is continuously guided to the upper surface of the substrate W by the central inclined portion 41b of the top surface 41. Therefore, the gas flow flowing toward the center of the substrate W can be made to gradually approach the upper surface of the substrate W while suppressing or preventing the occurrence of disturbance of the gas flow.
In the present embodiment, the gap Gc between the center portion of the upper surface of the substrate W and the top surface 41 is not only narrower than the gap Ge between the outer peripheral portion of the upper surface of the substrate W and the top surface 41, but also wider than the thickness T1 of the substrate W. The exhaust port 44 is opened in a position where the top surface 41 faces the center of the upper surface of the substrate W. The vertical distance from the upper surface of the substrate W to the exhaust port 44 is wider than the thickness T1 of the substrate W. When the exhaust port 44 is excessively close to the upper surface of the substrate W, a large resistance is applied to the gas to be introduced between the exhaust port 44 and the substrate W. Therefore, by separating the exhaust port 44 from the upper surface of the substrate W by an appropriate distance, the occurrence of a stagnation region directly below the exhaust port 44 can be suppressed or prevented while suppressing or preventing the occurrence of turbulence in the gas flow.
When the gas supply port 46 discharges the gas vertically, the discharged gas changes its direction by approximately 90 degrees and then flows inward toward the center of the substrate W. In the present embodiment, air supply port 46 horizontally faces the space between the upper surface of substrate W and top surface 41. The gas ejected from gas supply port 46 flows inward along the upper surface of substrate W without changing its direction at a large angle. Therefore, as compared with the case where the gas supply port 46 discharges the gas vertically, the occurrence of turbulence in the gas flow in the outer peripheral portion of the substrate W can be suppressed or prevented.
In the present embodiment, the dry processing unit 2D performs a dry processing step of processing the substrate W without supplying the liquid to the substrate W. Subsequently, the center robot CR transfers the substrate W from the dry processing unit 2D to the wet processing unit 2W. In the wet processing unit 2W, a wet processing step of supplying the processing liquid to the substrate W is performed. Therefore, in the same substrate processing apparatus 1, both the dry processing step and the wet processing step can be performed. Further, since the dry processing step and the wet processing step are performed in different units, complication of each unit can be suppressed or prevented.
The ozone gas is an example of a reaction gas that reacts with the substrate W. In the present embodiment, the ozone gas ejected from the gas supply port 46 is supplied to the upper surface of the substrate W. The resist pattern PR is gasified or deteriorated by a reaction of the resist with ozone gas. Further, the ozone gas is supplied to the upper surface of the substrate W heated by the heater 22. This promotes the reaction between the resist and the ozone gas, and allows the resist pattern PR to uniformly react with the ozone gas in a short time.
Other embodiments
The present invention is not limited to the above embodiments, and various modifications can be made.
For example, as shown in fig. 11, the vertical cross section of corner 42 included in the inner surface of cover portion 30 is not limited to an L-shape, and may be an arc shape, or may be other shapes.
When the vertical cross section of the corner portion 42 is L-shaped, a retention region is generated in the corner portion 42. Therefore, by providing the corner portion 42 having an arc-shaped vertical cross section in the cover portion 30, the occurrence of such a staying area can be suppressed or prevented.
As shown in fig. 12, the lower surface of the plate portion 32a of the upper plate 32 may not be parallel to the upper surface of the substrate W. Fig. 12 shows an example in which the center block 31 is omitted and the center horizontal portion 41a and the outer inclined portion 41e are provided on the lower surface of the plate portion 32a. The outer inclined portion 41e extends obliquely downward from the outer edge of the top surface 41 of the cover portion 30 to the outer edge of the central horizontal portion 41 a.
The interval Gc between the upper surface of the substrate W and the top surface 41 at the center of the upper surface of the substrate W may be narrower than the interval Ge between the upper surface of the substrate W and the top surface 41 at the outer peripheral portion of the upper surface of the substrate W, and the interval Gc between the upper surface of the substrate W and the top surface 41 may not be the widest at the outer peripheral portion of the upper surface of the substrate W.
The distance Ge between the upper surface of the substrate W and the top surface 41 at the outer peripheral portion of the upper surface of the substrate W may be constant over the entire circumference or may vary depending on the circumferential position. The same applies to the spacing of the other portions of the upper surface of the substrate W except for the center portion.
The gas supply port 46 is not limited to a direction toward the center of the upper surface of the substrate W in plan view, and the gas may be ejected from the gas supply port 46 in a vertical direction extending upward or downward. That is, the discharge direction D1 may be a vertical direction extending upward or downward from the air supply port 46.
The gas ejected from the gas supply port 46 may be other than ozone gas. For example, the gas may be a gas containing a substance that reacts with the substrate W (a base material of the substrate W including a silicon wafer or the like and a thin film formed on the base material), such as hydrogen fluoride or IPA (isopropyl alcohol), and may be dry air or clean air.
The ozone gas, the gas containing hydrogen fluoride, and the gas containing IPA are examples of a reactive gas that reacts with the substrate W, and the dry air or the clean air is an example of a gas that does not react with the substrate W. The gas containing hydrogen fluoride may be a vapor of hydrogen fluoride, or a gas containing a vapor or mist of hydrogen fluoride and a carrier gas (e.g., an inert gas). The same applies to the gas containing IPA.
The heater 22 may be omitted from the substrate processing apparatus 1. Similarly, the wet processing unit 2W may be omitted from the substrate processing apparatus 1.
The substrate processing apparatus 1 is not limited to an apparatus for processing a disk-shaped substrate W, and may be an apparatus for processing a polygonal substrate W.
Two or more of all of the above structures may be combined. More than 2 of the above-mentioned all steps may also be combined.
This application corresponds to patent application No. 2016-187093, filed on 2016, 9, 26, to the present patent office, the entire disclosure of which is incorporated herein by reference. The embodiments of the present invention have been described in detail, but these are merely specific examples used for clarifying the technical content of the present invention, and the present invention should not be construed as being limited to these specific examples, and the spirit and scope of the present invention is limited only by the appended claims.
[ description of reference numerals ]
1: substrate processing apparatus
2D: dry processing unit
2W: wet processing unit
8: heating unit
21: heating plate
22: heating device
23: supporting member
30: cover part
41: top surface of cover part
41a: central horizontal part of top surface
41b: central inclined part of top surface
41c: central vertical part of top surface
41d: outer horizontal part of top surface
41e: outer inclined part of top surface
42: corner of cover
43: cylindrical surface of cover part
44: exhaust port
46: air supply port
51: ozone gas generation unit
52: 1 st ozone gas pipe (reaction gas supply unit, ozone gas supply unit)
53: 2 nd ozone gas piping (reaction gas supply unit, ozone gas supply unit)
54: ozone gas supply valve (reaction gas supply unit, ozone gas supply unit)
55: 1 st common pipe
56: 2 nd common piping
60: 1 st exhaust pipe
61: 2 nd exhaust pipe
62: ozone filter
A2: plumb line
CR: center manipulator
D1: direction of ejection
Gc: distance between the center of the upper surface of the substrate and the top surface
Ge: the interval between the outer periphery and the top surface of the upper surface of the substrate
IR: indexing manipulator
PF: thin film pattern
PR: resist pattern
SH: reciprocating carrier
T1: thickness of substrate
W: substrate

Claims (20)

1. A substrate processing apparatus includes:
a support member supporting the substrate to be horizontal;
a cover portion including a top surface facing the upper surface of the substrate supported by the support member and a cylindrical surface surrounding the substrate supported by the support member, the cover portion being formed such that a distance between the upper surface of the substrate and the top surface at a center portion of the upper surface of the substrate is narrower than a distance between the upper surface of the substrate and the top surface at an outer peripheral portion of the upper surface of the substrate;
a gas supply unit including an annular gas supply port located outside the substrate supported by the support member and surrounding a vertical line passing through a center of the substrate supported by the support member, the gas supply unit supplying a gas ejected from the gas supply port to a space between an upper surface and a top surface of the substrate supported by the support member from a periphery of the space; and
and an exhaust unit including an exhaust port that opens at the top surface at a position facing a center portion of the upper surface of the substrate, and configured to exhaust gas between the upper surface of the substrate and the top surface through the exhaust port.
2. The substrate processing apparatus according to claim 1,
the distance between the upper surface of the substrate and the top surface decreases stepwise or continuously as the distance from the outer peripheral portion of the upper surface of the substrate to the center portion of the upper surface of the substrate approaches the vertical line.
3. The substrate processing apparatus according to claim 2,
the top surface includes an annular inclined portion extending obliquely downward toward the vertical line.
4. The substrate processing apparatus according to any one of claims 1 to 3,
the cover portion further includes an annular corner portion having an arc-shaped vertical cross section and extending from an outer edge of the top surface toward an upper edge of the cylindrical surface.
5. The substrate processing apparatus according to any one of claims 1 to 3,
the distance between the upper surface of the substrate and the top surface at the center of the upper surface of the substrate is narrower than the distance between the upper surface of the substrate and the top surface at the outer periphery of the upper surface of the substrate, and is wider than the thickness of the substrate.
6. The substrate processing apparatus according to any one of claims 1 to 3,
the gas supply port is disposed at a height above the upper surface of the substrate supported by the support member and below the top surface, and discharges gas in a discharge direction toward a center portion of the upper surface of the substrate supported by the support member in a plan view.
7. The substrate processing apparatus according to any one of claims 1 to 3,
the substrate processing apparatus further includes: a heater disposed below the substrate supported by the support member, the heater generating heat to be supplied to the substrate;
the gas supply unit includes a reaction gas supply unit that supplies a reaction gas that reacts with the substrate to the gas supply port.
8. The substrate processing apparatus according to any one of claims 1 to 3,
the substrate processing apparatus further includes: a wet processing unit for processing the substrate with a processing liquid; and a conveying unit for conveying the substrate from a dry processing unit including the supporting member and the cover portion to the wet processing unit.
9. The substrate processing apparatus according to any one of claims 1 to 3,
the substrate processing apparatus is an apparatus for removing a resist pattern on a thin film pattern formed on an upper surface of the substrate by supplying a reaction gas reacting with the substrate to the substrate.
10. The substrate processing apparatus according to claim 9,
the substrate processing apparatus further includes: a heater disposed below the substrate supported by the support member and generating heat to be supplied to the substrate;
the gas supply unit includes an ozone gas supply unit that supplies ozone gas to the gas supply port.
11. A method of processing a substrate, comprising:
a supporting step of supporting the substrate to be horizontal by using a supporting member;
a covering step, executed in parallel with the supporting step, of disposing the substrate supported by the support member inside a cover portion that includes a top surface facing an upper surface of the substrate supported by the support member and a cylindrical surface surrounding the substrate supported by the support member, and that is formed such that an interval between the upper surface of the substrate and the top surface in a center portion of the upper surface of the substrate is narrower than an interval between the upper surface of the substrate and an outer peripheral portion of the top surface in the upper surface of the substrate;
a gas supply step, performed in parallel with the supporting step, of supplying gas, which is ejected from an annular gas supply port that surrounds a vertical line passing through a center portion of the substrate supported by the supporting member, to a space between an upper surface of the substrate supported by the supporting member and the top surface from a periphery of the space; and
and an exhaust step, executed in parallel with the support step, of exhausting the gas between the upper surface of the substrate and the ceiling surface through an exhaust port that opens at a position of the ceiling surface that faces a center portion of the upper surface of the substrate.
12. The substrate processing method according to claim 11, wherein,
the distance between the upper surface of the substrate and the top surface decreases stepwise or continuously as the distance approaches the vertical line from the outer peripheral portion of the upper surface of the substrate to the central portion of the upper surface of the substrate.
13. The substrate processing method according to claim 12, wherein,
the top surface includes an annular inclined portion extending obliquely downward toward the vertical line.
14. The substrate processing method according to any one of claims 11 to 13,
the cover portion further includes an annular corner portion having an arc-shaped vertical cross section and extending from an outer edge of the top surface toward an upper edge of the cylindrical surface.
15. The substrate processing method according to any one of claims 11 to 13,
the distance between the upper surface of the substrate and the top surface at the center of the upper surface of the substrate is narrower than the distance between the upper surface of the substrate and the top surface at the outer periphery of the upper surface of the substrate, and is wider than the thickness of the substrate.
16. The substrate processing method according to any one of claims 11 to 13,
the gas supply port is disposed at a height above the upper surface of the substrate supported by the support member and below the top surface, and discharges a gas in a discharge direction toward a center portion of the upper surface of the substrate supported by the support member in a plan view.
17. The substrate processing method according to any one of claims 11 to 13,
the substrate processing method further includes: a heating step of heating the substrate by heat generated by a heater disposed below the substrate supported by the support member, the heating step being performed in parallel with the supporting step,
the gas supply step includes: and ejecting a reaction gas reacting with the substrate from the gas supply port.
18. The substrate processing method according to any one of claims 11 to 13,
further comprising:
a carrying step of carrying the substrate by a carrying unit from a dry processing unit that performs the supporting step, the covering step, the air supplying step, and the exhausting step to a wet processing unit that processes the substrate with a processing liquid; and
and a wet processing step of processing the substrate in the wet processing unit after the carrying step is performed.
19. The substrate processing method according to any one of claims 11 to 13,
the substrate processing method is a method of removing a resist pattern on a thin film pattern formed on an upper surface of the substrate by supplying a reaction gas reacting with the substrate to the substrate.
20. The substrate processing method according to claim 19,
the substrate processing method further includes: a heating step, executed in parallel with the supporting step, of heating the substrate by heat generated by a heater disposed below the substrate supported by the supporting member,
the gas supply step includes a step of ejecting ozone gas from the gas supply port.
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