KR101968486B1 - Apparatus and method for treating substrate - Google Patents

Abstract

The present invention relates to a substrate processing apparatus. The substrate processing apparatus according to an embodiment of the present invention includes an index module; Process processing module; And a controller, wherein the index module comprises: a load port in which a container for receiving a substrate is placed; And a transfer frame provided with an index robot for transferring a substrate between the container and the process processing module, the process processing module comprising: a plurality of process chambers; And a transfer chamber provided with a main robot for transferring a substrate between the process chambers, wherein the controller includes: a first application step of supplying a first application liquid on a patterned substrate to form a first application layer; A second coating step of supplying a second coating liquid onto the substrate to form a second coating layer; and a second coating step of supplying a second coating liquid onto the substrate to form a second coating layer, Wherein the process chamber comprises: a first chamber for performing the first coating process; And a second chamber for performing the second application process.

Description

[0001] APPARATUS AND METHOD FOR TREATING SUBSTRATE [0002]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an apparatus and a method for processing a substrate, and more particularly, to an apparatus and a method for applying a film on a substrate.

Various processes such as cleaning, deposition, photolithography, etching, and ion implantation are performed to manufacture semiconductor devices. Among these processes, a deposition and spin-on hard mask (SOH) process is used as a process for forming a film on a substrate.

In general, a deposition process is a process of forming a film on a substrate by depositing a process gas on a substrate, and a coating process is a process of forming a liquid film by supplying a process liquid to the center of the substrate.

In the case of applying a spin-on hard mask, generally, a spin-on hard mask is applied, an etching process is performed, and then a spin-on hard mask is applied again. In this case, the apparatus for performing the coating process and the apparatus for performing the etching process are provided as separate apparatuses. Therefore, a footprint is required for each device, and it takes time to move the substrate between the devices, which causes a decrease in the production amount. In addition, there is a problem that a device operation cost is increased by operating a separate device.

The present invention is intended to provide an apparatus and method that can minimize the footprint.

The present invention also provides an apparatus and a method for increasing the productivity of producing a substrate.

The problems to be solved by the present invention are not limited thereto, and other matters not mentioned can be clearly understood by those skilled in the art from the following description.

The present invention provides a substrate processing apparatus for processing a substrate. According to one embodiment, the substrate processing apparatus includes an index module; Process processing module; And a controller, wherein the index module comprises: a load port in which a container for receiving a substrate is placed; And a transfer frame provided with an index robot for transferring a substrate between the container and the process processing module, the process processing module comprising: a plurality of process chambers; And a transfer chamber provided with a main robot for transferring a substrate between the process chambers, wherein the controller includes: a first application step of supplying a first application liquid on a patterned substrate to form a first application layer; A second coating step of supplying a second coating liquid onto the substrate to form a second coating layer; and a second coating step of supplying a second coating liquid onto the substrate to form a second coating layer, Wherein the process chamber comprises: a first chamber for performing the first coating process; And a second chamber for performing the second application process.

The etching process is performed in one of the first chamber and the second chamber.

The process chamber further includes a bake chamber for performing a heat treatment process for heat-treating the substrate.

The controller controls the process module to perform the heat treatment process between the first application process and the etching process, and after the second application process.

The first chamber and the second chamber may be provided to be stacked on each other.

Wherein the first chamber and the second chamber are each provided so as to be arranged in a first direction, the bake chamber is provided in a plurality, and a part of the first chamber and the second chamber are located in a second direction from the first chamber, And another portion is located in a second direction from the second chamber and is arranged along the first direction, and between the portion of the bake chamber and the first chamber, and between the other portion of the bake chamber and the second portion of the bake chamber, The transfer chamber is located between the two chambers, and the first and second directions may be perpendicular to each other when viewed from above.

The first coating liquid and the second coating liquid may be provided as a photoresist (PR) or a spin-on hard mask (SOH) liquid.

The chemical may include a thinner.

Alternatively, the substrate processing apparatus may further include: an index module; A process module, the index module comprising: a load port in which a container for receiving a substrate is placed; And a transfer frame provided with an index robot for transferring a substrate between the container and the process processing module, wherein the process module comprises: a first application unit for supplying a first application liquid onto a substrate on which a pattern is formed to form a first application layer; A first chamber having a first application unit for performing a process; An etching unit for performing an etching process of supplying a chemicard to the substrate to remove a first coating layer located on an upper surface of the pattern so that an upper surface of the pattern is exposed; A second chamber having a second application unit for performing a second application process of supplying a second application liquid onto the substrate to form a second application layer; And a transfer chamber provided with a main robot for transferring a substrate between the first chamber and the second chamber.

The etching unit may be provided in the first chamber or the second chamber.

The process processing module further includes a bake chamber for performing a heat treatment process for heat-treating the substrate, wherein the main robot transports the substrate between the first chamber, the second chamber, and the bake chamber.

The first chamber and the second chamber may be provided to be stacked on each other.

The apparatus further includes a controller, wherein the controller controls the processing module to sequentially perform the first application process, the etching process, and the second application process.

The controller controls the process module to perform the heat treatment process between the first application process and the etching process and after the second application process.

The first coating liquid and the second coating liquid may be provided as a photoresist (PR) or a spin-on hard mask (SOH) liquid.

The chemical may include a thinner.

The present invention also provides a substrate processing method for processing a substrate. According to one embodiment, a substrate processing method includes: a first coating step of forming a first coating layer in a first chamber by supplying a first coating liquid onto a substrate on which a pattern is formed; An etch process for removing a first coating layer located on an upper surface of the pattern so that an upper surface of the pattern is exposed by supplying a chemical to the substrate; And a second coating step of supplying a second coating liquid onto the substrate in a second chamber to form a second coating layer, wherein the first coating step, the etching step and the second coating step are sequentially And the etching process is performed in one of the first chamber and the second chamber.

The etching process is performed on the entire upper surface of the substrate.

In the first coating step, the first coating liquid is applied to the concave portion between the patterns and the upper surface of the pattern.

In the second coating step, the second coating liquid is applied such that the upper surface of the pattern and the second coating layer formed on the upper surface of the first coating layer filled in the recess are formed to be flattened to each other.

And a heat treatment step of performing heat treatment on the substrate, wherein the heat treatment step is performed between the first application step and the etching step, and after the second application step.

The first chamber and the second chamber may be provided to be stacked on each other.

The first coating liquid and the second coating liquid may be provided by a photoresist (PR) or a spin-on hard mask (SOH).

The chemical may include a thinner.

According to one embodiment of the present invention, the apparatus and method of the present invention can minimize the footprint.

Further, according to an embodiment of the present invention, the apparatus and method of the present invention can increase the productivity of producing a substrate.

1 is a cross-sectional view illustrating a substrate processing apparatus according to an embodiment of the present invention.
FIG. 2 is a cross-sectional view of the substrate processing apparatus of FIG. 1 viewed from the direction AA.
3 is a cross-sectional view of the liquid processing chamber of FIG. 1 viewed from the front;
Fig. 4 is a plan view of the liquid processing chamber of Fig. 3;
Figure 5 is a perspective view showing the bake chamber of Figure 1;
FIG. 6 is a plan view showing the bake chamber of FIG. 5; FIG.
7 is a cross-sectional view of the bake chamber of Fig.
8 is a flowchart showing a substrate processing method according to an embodiment of the present invention.
9 to 11 are sectional views showing the substrate on which the first coating process, the etching process, and the second coating process of FIG. 8 are performed, respectively.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. The embodiments of the present invention can be modified in various forms, and the scope of the present invention should not be construed as being limited to the following embodiments. This embodiment is provided to more fully describe the present invention to those skilled in the art. Thus, the shape of the elements in the figures has been exaggerated to emphasize a clearer description.

The facility of this embodiment is used to perform a process of forming a liquid film by supplying a process liquid to a substrate such as a semiconductor wafer or a flat panel display panel. In particular, the facility of this embodiment is used to perform a process of rotating a substrate and supplying a process liquid to the center of the substrate to form a liquid. Hereinafter, a case where a wafer is used as a substrate will be described as an example. However, the substrate may be various types of substrates such as a flat panel display panel and a photomask in addition to a semiconductor wafer. Alternatively, the substrate processing apparatus according to the embodiments of the present invention may be applied to various facilities for forming a liquid film on a substrate.

1 is a plan view showing a substrate processing apparatus according to an embodiment of the present invention. FIG. 2 is a view of the substrate processing apparatus of FIG. 1 taken along the line A-A. 1 and 2, the substrate processing apparatus 1 includes an index module 10, a processing module 20, and a controller 30. The index module 10 has a load port 120 and a transfer frame 140. The load port 120, the transfer frame 140, and the process module 20 are sequentially arranged in a line. The direction in which the load port 120, the transfer frame 140 and the processing module 20 are arranged is referred to as a first direction 12 and a direction perpendicular to the first direction 12 Direction is referred to as a second direction 14 and a direction perpendicular to the plane including the first direction 12 and the second direction 14 is referred to as a third direction 16. [

The load port 120 is seated with a carrier 18 provided in a container in which the substrate W is housed. A plurality of load ports 120 are provided, and they are arranged in a line along the second direction 14. The number of load ports 120 may increase or decrease depending on the process efficiency and footprint conditions of the process module 20 and the like. The carrier 18 is provided with a plurality of slots (not shown) for accommodating the substrates W horizontally with respect to the paper surface. As the carrier 18, a front opening unified pod (FOUP) may be used.

The processing module 20 has a buffer unit 220, a transfer chamber 240, and a plurality of process chambers 260 and 280. The process chamber includes a liquid processing chamber 260 and a bake chamber 280. The transfer chamber 240 is disposed such that its longitudinal direction is parallel to the first direction 12. Liquid processing chambers 260 are disposed on one side of the transfer chamber 240 and bake chambers 280 are disposed on the other side. The liquid processing chambers 260 and the bake chambers 280 may be provided to be symmetrical with respect to the transfer chamber 240. A plurality of liquid processing chambers 260 are provided on one side of the transfer chamber 240. Some of the liquid processing chambers 260 are disposed along the longitudinal direction of the transfer chamber 240. In addition, some of the liquid processing chambers 260 are arranged to be stacked on each other. That is, at one side of the transfer chamber 240, the liquid processing chambers 260 may be arranged in an array of A X B. Where A is the number of liquid processing chambers 260 provided in a row along the first direction 12 and B is the number of liquid processing chambers 260 provided in a row along the third direction 16. [ When four or six liquid processing chambers 260 are provided on one side of the transfer chamber 240, the liquid processing chambers 260 may be arranged in an array of 2 X 2 or 3 X 2. The number of the liquid processing chambers 260 may increase or decrease.

According to one embodiment, the liquid processing chamber 260 includes a first chamber 260a and a second chamber 260b. In this case, a plurality of first chambers 260a and second chambers 260b are provided in the first direction 12, respectively. The first chamber 260a and the second chamber 260b are provided to be stacked on each other, and the first chamber 260a may be provided on the second chamber 260b. Alternatively, the second chamber 260b may optionally be provided above the first chamber 260a.

Unlike the above, the liquid processing chamber 260 may be provided as a single layer on one side and on both sides of the transfer chamber 240. In this case, the first chamber 260a and the second chamber 260b may be provided at the same height.

On the other side of the transfer chamber 240, a plurality of bake chambers 280 are provided. The bake chamber 280 may be provided in a larger number than the liquid processing chamber 260. Some of the bake chambers 280 are disposed along the longitudinal direction of the transfer chamber 240. Further, some of the bake chambers 280 are arranged to be stacked on each other. That is, at the other side of the transfer chamber 240, the bake chambers 280 may be arranged in an array of C X Ds. Where C is the number of bake chambers 280 provided in a row along the first direction 12 and D is the number of bake chambers 280 provided in a row along the third direction 16. When four or six bake chambers 280 are provided on the other side of the transfer chamber 240, the bake chambers 280 may be arranged in an array of 2 X 2 or 3 X 2. The number of the bake chambers 280 may increase or decrease. According to one embodiment, when the first chamber 260a and the second chamber 260b are provided as in FIGS. 1 and 2, a portion of the bake chamber 280 is located in the second direction from the first chamber 260a Are arranged along the first direction. Another portion of the bake chamber 280 is located in the second direction from the second chamber 260b and is arranged along the first direction. Thus, the transfer chamber 240 is located between a portion of the bake chamber and the first chamber 260a and between the other portion of the bake chamber 280 and the second chamber 260b. Unlike the above, the bake chambers 280 may be provided as a single layer.

The buffer unit 220 is disposed between the transfer frame 140 and the transfer chamber 240. The buffer unit 220 provides a space for the substrate W to stay before the transfer of the substrate W between the transfer chamber 240 and the transfer frame 140. [ In the buffer unit 220, a slot (not shown) in which the substrate W is placed is provided. A plurality of slots (not shown) are provided to be spaced along the third direction 16 from each other. The buffer unit 220 is opened on the side facing the transfer frame 140 and on the side facing the transfer chamber 240.

The transfer frame 140 is provided with an index rail 142 and an index robot 144. The index rail 142 is provided so that its longitudinal direction is parallel to the second direction 14. The index robot 144 carries the substrate W between the carrier 18 and the buffer unit 220 which are seated on the load port 120. The index robot 144 is installed on the index rail 142 and is linearly moved along the index rail 142 in the second direction 14. The index robot 144 has a base 144a, a body 144b, and an index arm 144c. The base 144a is installed so as to be movable along the index rail 142. The body 144b is coupled to the base 144a. The body 144b is provided to be movable along the third direction 16 on the base 144a. Also, the body 144b is provided to be rotatable on the base 144a. The index arm 144c is coupled to the body 144b and is provided to be movable forward and backward relative to the body 144b. A plurality of index arms 144c are provided and each is provided to be individually driven. The index arms 144c are stacked in a state of being spaced from each other along the third direction 16. Some of the index arms 144c are used to transfer the substrate W from the processing module 20 to the carrier 18 and another portion of the index arms 144c from the carrier 18 to the processing module 20, ). ≪ / RTI > This can prevent the particles generated from the substrate W before the process processing from adhering to the substrate W after the process processing in the process of loading and unloading the substrate W by the index robot 144. [

The transfer chamber 240 is provided with a guide rail 242 and a main robot 244. The main robot 244 transports the substrate W between the buffer unit 220, the first chamber 260a, the second chamber 260b, and the bake chamber 280. [ The guide rails 242 are arranged so that their longitudinal directions are parallel to the first direction 12. The main robot 244 is installed on the guide rails 242 and is linearly moved along the first direction 12 on the guide rails 242. The main robot 244 has a base 244a, a body 244b, and a main arm 244c. The base 244a is installed so as to be movable along the guide rail 242. The body 244b is coupled to the base 244a. The body 244b is provided to be movable along the third direction 16 on the base 244a. Body 244b is also provided to be rotatable on base 244a. The main arm 244c is coupled to the body 244b, which is provided for forward and backward movement relative to the body 244b. A plurality of main arms 244c are provided and each is provided to be individually driven. The main arms 244c are stacked in a state of being spaced from each other along the third direction 16.

In the liquid processing chamber 260, a film forming process for forming a film on the substrate W is performed. Some of the liquid processing chambers 260 have the same structure and configuration. However, the liquid processing chamber 260 may have a different structure depending on the kind of the film forming process to be performed. Optionally, the liquid processing chambers 260 are divided into a plurality of groups, and the liquid processing chambers 260 belonging to the same group have the same structure and structure, and the liquid processing chambers 260 belonging to different groups The structures may be provided differently from each other.

According to one embodiment, the first chamber 260a performs a first coating step S10. The first coating step S10 is a step of forming a first coating layer 15 by supplying a first coating liquid onto a substrate W on which a pattern 13 is formed. And the second chamber 260b performs a second coating process (S40). The second coating step S40 is a step of forming the second coating layer 17 by supplying the second coating liquid onto the substrate W on which the pattern 13 is formed. For example, the first coating liquid and the second coating liquid may be provided as a sensitizing liquid such as a photoresist (PR) or a spin-on hard mask liquid. The first coating liquid and the second coating liquid may be provided in a photoresist (PR) solution having a different component and / or composition ratio from each other. Alternatively, the first coating liquid and the second coating liquid may be provided in a spin-on hard mask liquid having different component and / or composition ratios from each other.

The etching process S30 is performed in one of the first chamber 260a and the second chamber 260b. In the etching step S30, a first coating layer 15 located on the upper surface of the pattern 13 is exposed so that the upper surface of the pattern 13 is exposed by supplying a chemical to the substrate W on which the first coating step S10 has been performed. . For example, a camel can be provided as a thinner. Alternatively, the chemical may be provided with various kinds of fluids capable of etching the first application layer 15 and the second application layer 17.

The first coating step (S10), the second coating step (S40) and the etching step (S30) may be performed at normal pressure. The first coating step S10, the second coating step S40 and the etching step S30 are carried out in such a manner that the first coating liquid, the second coating liquid or the chemical liquid is supplied to the substrate W in a state in which the substrate W is rotated . ≪ / RTI >

Details of each step will be explained together with the substrate processing method of the present invention with reference to FIGS. 8 to 11. FIG.

Fig. 3 is a cross-sectional view of the liquid processing chamber 260 of Fig. 1 viewed from the front, and Fig. 4 is a plan view of the liquid processing chamber 260 of Fig. The liquid processing chamber 260 shown in FIG. 1 may be the first chamber 260a or the second chamber 260b. The first chamber 260a and the second chamber 260b may be provided with the same configuration and structure except for the type of coating liquid supplied from the coating unit and the presence or absence of the etching unit 940. [ 3 and 4, the liquid processing chamber 260 includes a housing 810, an airflow providing unit 820, a substrate supporting unit 830, a processing vessel 850, a lift unit 890, 920), and an etching unit 940.

The housing 810 is provided in a rectangular tubular shape having a space 812 therein. An opening (not shown) is formed at one side of the housing 810. The opening serves as an inlet through which the substrate W is carried in and out. The opening is provided with a door, and the door opens and closes the opening. When the substrate processing process is performed, the door is closed to seal the inner space 812 of the housing 810. An inner exhaust port 814 and an outer exhaust port 816 are formed on the lower surface of the housing 810. The airflow formed in the housing 810 is exhausted to the outside through the inner exhaust port 814 and the outer exhaust port 816. According to one example, the airflow provided in the processing vessel 850 is exhausted through the inner exhaust port 814, and the airflow provided outside the processing vessel 850 can be exhausted through the outer exhaust port 816.

The airflow providing unit 820 forms a downward flow in the inner space of the housing 810. The airflow providing unit 820 includes an airflow supply line 822, a fan 824, and a filter 826. The airflow supply line 822 is connected to the housing 810. The air supply line 822 supplies external air to the housing 810. The filter 826 links the air provided from the airflow supply line 822 to the filter 826. The filter 826 removes impurities contained in the air. The fan 824 is mounted on the upper surface of the housing 810. The fan 824 is located in a central region in the upper surface of the housing 810. The fan 824 forms a downward flow in the inner space of the housing 810. When air is supplied to the fan 824 from the airflow supply line 822, the fan 824 supplies air in a downward direction.

The substrate support unit 830 supports the substrate W in the inner space of the housing 810. The substrate support unit 830 rotates the substrate W. The substrate support unit 830 includes a spin chuck 832 and rotation drive members 834 and 836. The spin chuck 832 is provided with a substrate support member 832 for supporting the substrate. The spin chuck 832 is provided to have a circular plate shape. The substrate W contacts the upper surface of the spin chuck 832. The spin chuck 832 is provided so as to have a smaller diameter than the substrate W. [ According to one example, the spin chuck 832 can vacuum-suck the substrate W and chuck the substrate W. Alternatively, the spin chuck 832 may be provided with an electrostatic chuck for chucking the substrate W using static electricity. The spin chuck 832 can also chuck the substrate W by physical force.

The rotation drive members 834 and 836 include a rotation shaft 834 and a driver 836. The rotating shaft 834 supports the spin chuck 832 below the spin chuck 832. The rotary shaft 834 is provided such that its longitudinal direction is directed up and down. The rotation shaft 834 is provided so as to be rotatable about its central axis. The driver 836 provides a driving force such that the rotation shaft 834 is rotated. For example, the driver 836 may be a motor capable of varying the rotational speed of the rotating shaft.

The processing vessel 850 is located in the interior space 812 of the housing 810. The processing vessel 850 provides a processing space therein. The processing vessel 850 is provided so that the upper portion thereof has an open cup shape. The processing vessel 850 includes an inner cup 852 and an outer cup 862.

The inner cup 852 is provided in the shape of a circular plate surrounding the rotation shaft 834. The inner cup 852 is positioned to overlap the inner vent 814 when viewed from above. The upper surface of the inner cup 852 is provided such that its outer and inner regions are inclined at different angles from each other. According to one example, the outer region of the inner cup 852 is oriented downwardly away from the substrate support unit 830, and the inner region is oriented in an upward sloping direction away from the substrate support unit 830 Lt; / RTI > A point where the outer region and the inner region of the inner cup 852 meet with each other is vertically provided in correspondence with the side end portion of the substrate W. [ The upper surface area of the inner cup 852 is provided to be rounded. The upper surface area of the inner cup 852 is provided downwardly concave. The upper surface area of the inner cup 852 may be provided in a region where the coating liquid supplied from the coating unit 920 and the processing liquid such as the camber supplied from the etching unit 940 flow.

The outer cup 862 is provided to have a cup shape that encloses the substrate support unit 830 and the inner cup 852. The outer cup 862 has a bottom wall 864, a side wall 866, a top wall 870, and an inclined wall 870. The bottom wall 864 is provided to have a circular plate shape having a hollow. A collection line 865 is formed in the bottom wall 864. The recovery line 865 recovers the treatment liquid supplied on the substrate W. [ The treatment liquid recovered by the recovery line 865 can be reused by an external liquid recovery system. The side wall 866 is provided to have a circular tubular shape surrounding the substrate supporting unit 830. The side wall 866 extends in a vertical direction from the side edge of the bottom wall 864. The side wall 866 extends upwardly from the bottom wall 864.

The inclined wall 870 extends inward of the outer cup 862 from the top of the side wall 866. The inclined wall 870 is provided so as to approach the substrate supporting unit 830 upward. The inclined wall 870 is provided so as to have a ring shape. The upper end of the inclined wall 870 is positioned higher than the substrate W supported on the substrate supporting unit 830. [

The lifting unit 890 lifts the inner cup 852 and the outer cup 862, respectively. The elevating unit 890 includes an inside moving member 892 and an outside moving member 894. The inner moving member 892 lifts the inner cup 852 and the outer moving member 894 moves the outer cup 862 up and down.

The application unit 920 performs an application process of forming a thin film. Wherein the thin film is provided as a liquid film formed by the liquid. The application unit 920 supplies the application liquid onto the substrate W. [ When the process chamber of Fig. 3 is the first chamber 260a, the application unit 920 is provided as the first application unit 920a. Alternatively, when the process chamber of FIG. 3 is the second chamber 260b, the application unit 920 is provided as a second application unit 920b. The first coating unit 920a supplies the first coating liquid onto the substrate W to perform the first coating process S10. The second coating unit 920b supplies the second coating liquid onto the substrate W to perform the second coating process S40. The application unit 920 includes a guide member 922, an arm 924, and a dispensing nozzle 926. The guide member 922 and the arm 924 move the application nozzle 926 to the process position and the standby position. Here, the process position is a position where the discharge end of the application nozzle 926 faces the center of the substrate W, and the standby position is defined as a position out of the process position. The guide member 922 includes a guide rail 922 for moving the arm 924 in the horizontal direction. The guide rails 922 are located on one side of the processing vessel 850. The guide rails 922 are provided so that their longitudinal directions are oriented in the horizontal direction. According to an example, the longitudinal direction of the guide rail 922 may be provided so as to be directed in a direction parallel to the first direction 12. An arm 924 is provided on the guide rail 922. The arm 924 can be moved by a linear motor provided inside the guide rail 922. The arm 924 is provided so as to face the longitudinal direction perpendicular to the guide rail 922 when viewed from above. One end of the arm 924 is mounted on the guide rail 922. A coating nozzle 926 is provided on the bottom surface of the other end of the arm 924. Optionally, the arm 924 may be coupled to a rotational axis 834 whose longitudinal direction faces the third direction 16 and may be rotated.

The etching unit 940 supplies the substrate W with a chemical to perform the etching process. The etching unit 940 includes a guide member 942, an arm 944, and a chemical nozzle 946. The guide member 942 and the arm 944 of the etching unit 940 are provided so as to have the same shape as the guide member 922 and the arm 924 of the application unit 920. [ The guide member 942 and the arm 944 of the etching unit 940 are independently actuatable with the application unit 920. Therefore, the detailed description of the guide member 942 and the arm 944 of the etching unit 940 is omitted. The chemical nozzle 946 discharges the chemical on the substrate W. The camical nozzle 946 is fixedly coupled to the bottom surface of the arm 944. The application unit 920, the etching unit 940 and the rotation drive members 834 and 836 are controlled by the controller 30. [ The etching unit 940 may be provided in one of the first chamber 260a or the second chamber 260b.

Each of the bake chambers 280 has the same structure. However, the bake chamber 280 may have a different structure depending on the type of the film forming process to be performed or the difference in the amount of exhaust due to the height difference between the chambers 810. Alternatively, the bake chambers 280 are divided into a plurality of groups, and the substrate processing apparatuses provided to the bake chamber 280 belonging to the same group are identical to each other, and the substrate processing apparatuses 280 provided in the bake chamber 280, May be provided differently from each other.

The bake chamber 280 may perform a heat treatment process for heating the substrate W to a predetermined temperature and a cooling process for cooling the substrate W after each heat treatment process.

5 is a perspective view showing the bake chamber 280 of FIG. 6 is a plan view showing the bake chamber 280 of Fig. 7 is a cross-sectional view showing the bake chamber 280 of Fig. 5 to 7, the bake chamber 280 includes a housing 1100, a transfer unit 1200, a heating unit 1300, and a cooling unit 1400.

The housing 1100 provides a processing space therein for processing such as a baking process. The housing 1100 is provided in a rectangular parallelepiped shape. The housing 100 includes a first sidewall 1111, a second sidewall 1112, a third sidewall 1113, and a fourth sidewall 1114.

The first side wall 1111 is provided on one side of the housing 1100. The first sidewall 1111 is formed with an entrance 1116 through which the substrate W enters and exits. The entry port 1116 provides a passage through which the substrate W is moved.

The second side wall 1112 is formed on the opposite side of the first side wall 1111. The second side wall 1112 is provided in parallel with the first side wall 1111. A third sidewall 1113 is provided between the first sidewall 1111 and the second sidewall 1112. The third sidewall 1113 is provided perpendicularly to the first sidewall 1111 and the second sidewall 1112, respectively. A fourth sidewall 1114 is provided between the first sidewall 111 and the second sidewall 1112. A fourth sidewall 1114 is provided perpendicularly to the first sidewall 1111 and the third sidewall 1113, respectively. The fourth side wall 1114 is provided in parallel with the third side wall 1113.

The transfer unit 1200 moves the substrate W between the heating unit 1300 and the cooling unit 1400 in the housing 1100. The transport unit 1200 includes a transport plate 1210, a support arm 1220, a support ring 1230, and a drive member 1270.

The substrate W is placed on the transfer plate 1210. The transport plate 1210 is provided in a circular shape. The transfer plate 1210 is provided with the same size as the substrate W. [ The transfer plate 1210 is made of a metal material having good thermal conductivity. A guide hole 1250 is formed in the transport plate 1210. The guide hole 1250 is a space for accommodating the lift pin 1315. Guide holes 1250 are provided extending from the outside of the conveying plate 1210 to the inside thereof. The guide hole 1250 prevents interference or collision with the lift pin 1315 when the conveying plate 1210 is moved.

The support arm 1220 is fixedly coupled to the transfer plate 1210. A support arm 1220 is provided between the transfer plate 1210 and the drive member 1270.

A support ring 1230 is provided wrapping around the conveying plate 1210. The support ring 1230 supports the edge of the transfer plate 1210. The support ring 1230 serves to support the substrate W such that the substrate W is placed in the correct position after the substrate W is placed on the transfer plate 1210.

The driving member 1270 allows the transport plate 1210 to be transported or transported. The driving member 1270 is provided so as to be able to linearly move or vertically drive the transfer plate 1210.

The heating unit 1300 supports the substrate to heat the substrate. The heating unit 1300 includes a plate 1311, a pin hole 1312, a heater 1313, a lift pin 1315, a cover 1317, and a driver 1319.

The plate 1311 is provided in a cylindrical shape. The plate 1311 may be provided with a material having good thermal conductivity. For example, the plate 1311 may be made of a metal material. A pin hole 1312 is formed in the upper portion of the plate 1311 to receive a lift pin 1315. [

The heater 1313 heats the substrate W. The heater 1313 is provided inside the plate 1311. For example, the heater 1313 may be installed in the plate 1311 as a heating coil. Alternatively, the plate 1311 may be provided with heating patterns. Since the heater 1313 is provided inside the plate 1311, the plate 1311 is preferentially heated before the substrate is heated.

The pin hole 1312 is provided for the moving path of the lift pin 1315 when the lift pin 1315 moves the substrate W up and down. A pin hole 1312 is provided on the top of the plate 1311, and a plurality of pins can be provided.

The lift pins 1315 are moved up and down by a lifting mechanism (not shown). The lift pins 1315 can seat the substrate W on the plate 1311. [ The lift pins 1315 can raise and lower the substrate W to a position spaced apart from the plate 1311 by a predetermined distance.

The cover 1317 is located on the top of the plate 1311. The cover 1317 is provided in a cylindrical shape. The cover 1317 provides a heating space therein. The cover 1317 moves to the upper portion of the plate 1311 by the driver 1319 when the substrate W is moved to the plate 1311. [ The cover 1317 moves the substrate W downward by the driver 1319 when heated by the plate 1311 to form a heating space in which the substrate W is heated.

The driver 1319 is fixedly coupled to the cover 1317 by a support portion 1318. [ The driver 1319 moves the cover 1317 upward and downward when it is conveyed or conveyed to the plate 1311 of the substrate W. [ In one example, the actuator 1319 may be provided as a cylinder actuator.

The cooling unit 1400 serves to cool the plate 1311 or the processed substrate W. [ The cooling unit 1400 is located inside the housing 1100. The cooling unit 1400 is positioned closer to the first sidewall 1111 than the second sidewall 1112. The cooling unit 400 includes a cooling plate 410. [

Cooling plate 1410 cools the substrate. The cooling plate 1410 may be provided in a circular shape. The cooling plate 1410 may be provided in a size corresponding to the substrate. A cooling channel may be provided inside the cooling plate 1410. Cooling water is supplied to the cooling passage to cool the substrate W. The transfer plate 1210 is placed on the cooling plate 1410 while the substrate is held on the transfer plate 1210, and the substrate can be cooled.

The controller 30 controls the process module 20 such that the first coating process S10, the etching process S30 and the second coating process S40 are sequentially performed. The controller 30 controls the process processing module 20 to perform the heat treatment process between the first coating process S10 and the etching process S30 and after the second coating process S40.

Hereinafter, a substrate processing method according to an embodiment of the present invention will be described using the substrate processing apparatus 1 of FIG.

8 is a flowchart showing a substrate processing method according to an embodiment of the present invention. Referring to FIG. 8, the substrate processing method includes a first coating step (S10), an etching step (S30), a second coating step (S40), and a heat treatment step (S20, S50). The first coating step (S10), the etching step (S30) and the second coating step (S40) are performed sequentially.

9 to 11 are sectional views showing the substrate W on which the first coating step (S10), the etching step (S30) and the second coating step (S40) of FIG. 8 are performed. Referring to Fig. 9, in the first coating step S10, the controller 30 controls the first coating unit 920a and the substrate supporting unit 830 to perform the first coating step S10. In the first coating step S10, the first coating liquid 15 is supplied onto the substrate W on which the pattern 13 is formed in the first chamber 260a to form the first coating layer 15. The first coating liquid is applied to the concave portion between the patterns 13 and the upper surface of the pattern 13 to form the first coating layer 15 on the concave portion between the patterns 13 and on the upper surface of the pattern 13.

Referring to Figure 10, in the etching process S30, the controller 30 includes an etching unit 940 and a substrate support unit 230 to perform an etching process S30 in the first chamber 260a or the second chamber 260b. (830). In the etching step S30, the first coated layer 15 located on the upper surface of the pattern 13 is removed so that the upper surface of the pattern 13 is exposed by supplying a chemical to the substrate W. The etching process S30 is performed on the entire upper surface of the substrate W. [ The etching process (S30) is provided in a wet process performed by supplying a chemical, so that etching with a high selectivity ratio is possible as compared with the dry process. 1, when the etching process S30 is performed in the first chamber 260a, after the first coating process S10 is completed, the bake chamber 280 is heated, The substrate W is transferred from the first chamber 260a to the first chamber 260a for the etching process S30 after the wafer W is taken out of the first chamber 260a to perform the heat treatment process S20. Therefore, when the etching process S30 is performed in the second chamber 260b, the substrate transfer is not required between the etching process S30 and the second coating process S40, so that the etching process S30 is performed in the second chamber S40 ), The total process time can be shortened, so that it can be efficient.

Referring to Fig. 11, in the second coating step (S40), the controller 30 controls the second coating unit 920b and the substrate supporting unit 830 to perform the second coating step (S40). In the second coating step (S40), the second coating liquid is supplied onto the substrate W in the second chamber 260b to form the second coating layer 17. The second coating liquid is applied such that the second coating layer 17 formed on the upper surface of the pattern 13 and the upper surface of the first coating layer 15 filled in the recesses between the patterns 13 are formed to be flat.

In the heat treatment process (S20, S50), the substrate W is heated to a predetermined temperature and heat treatment is performed on the substrate W. The heat treatment steps S20 and S50 are performed between the first coating step S10 and the etching step S30 and after the second coating step S40. The temperature at which the substrate W is heated in the heat treatment step S20 performed between the first coating step S10 and the etching step S30 and the temperature at which the substrate W is heated in the heat treatment step S50 performed after the second coating step S40 The temperature at which the substrate W is heated may be different. The bake chamber 280 performing the heat treatment step S20 performed between the first coating step S10 and the etching step S30 is formed in the first chamber 260a in order to shorten the transportation distance of the substrate W. [ And the bake chamber 280 performing the heat treatment process S50 performed after the second application process S40 may be provided at a height corresponding to that of the second chamber 260b.

As described above, the apparatus and method according to the embodiment of the present invention are provided so that the etching process can be performed together in the chamber in which the coating process is performed, so that a device for separate etching is not required, so that the footprint can be minimized can do. In addition, since the substrate W is successively coated on one another and the substrate is transported for etching, the time required for transporting the substrate can be shortened, and productivity for producing the substrate can be increased.

1: substrate processing equipment 10: index module
20: Process processing module 260: Liquid processing chamber
260a: first chamber 260b: second chamber
280: Baking chamber 920: Coating unit
940: etching unit

Claims (15)

An apparatus for processing a substrate,
An index module;
Process processing module; And
A controller,
The index module comprises:
A load port in which a vessel containing a substrate is placed;
And a transfer frame provided with an index robot for transferring a substrate between the container and the process processing module,
Wherein the process module comprises:
A plurality of process chambers;
And a transfer chamber provided with a main robot for transferring a substrate between the process chambers,
The controller comprising:
A first coating step of supplying a first coating liquid onto a substrate on which a pattern is formed to form a first coating layer; a first coating step of supplying a first coating layer, which is located on the upper surface of the pattern, Sequentially performing a second coating step of forming a second coating layer by supplying a second coating liquid onto the substrate;
Controlling the processing module to perform the first coating process, the etching process, and the second coating process at normal pressure,
The process chamber includes:
A first chamber for performing the first coating process and the etching process;
And a second chamber for performing the second application process,
Wherein the first coating liquid and the second coating liquid have different composition ratios,
Wherein the process chamber further comprises a bake chamber for performing a heat treatment process for heat-treating the substrate,
The controller comprising:
Controlling the process module to perform the heat treatment process between the first application process and the etching process and after the second application process,
A bake chamber for performing the heat treatment process between the first coating process and the etching process is provided at a height corresponding to the first chamber,
Wherein the baking chamber for performing the heat treatment process after the second application process is provided at a height corresponding to the second chamber. The method according to claim 1,
Wherein the first coating liquid and the second coating liquid are provided as photoresist (PR). The method according to claim 1,
Wherein the first coating liquid and the second coating liquid are provided as a spin-on hard mask (SOH) liquid. The method according to claim 1,
Wherein the camber comprises a thinner. delete The method according to claim 1,
The controller comprising:
Wherein the temperature of heating the substrate in the heat treatment step performed between the first application step and the etching step and the temperature of heating the substrate in the heat treatment step performed after the second application step are different from each other, Processing device. delete A method of processing a substrate,
A first coating step of supplying, in a first chamber, a first coating liquid onto a patterned substrate to form a first coated layer;
An etch process for removing a first coating layer located on an upper surface of the pattern so as to expose an upper surface of the pattern by supplying a chemical to the substrate in the first chamber;
And a second coating step of supplying a second coating liquid onto the substrate in the second chamber to form a second coated layer,
The first coating step, the etching step and the second coating step are sequentially performed,
Wherein the first coating liquid and the second coating liquid have different composition ratios,
Further comprising a heat treatment step of performing heat treatment on the substrate,
Wherein the heat treatment step is performed between the first coating step and the etching step and after the second coating step,
Further comprising a plurality of bake chambers for performing the heat treatment process,
A bake chamber for performing the heat treatment process between the first coating process and the etching process is provided at a height corresponding to the first chamber,
Wherein the baking chamber for performing the heat treatment step after the second application step is provided at a height corresponding to the second chamber. 9. The method of claim 8,
Wherein the first coating liquid and the second coating liquid are provided as photoresist (PR). 9. The method of claim 8,
Wherein the first coating liquid and the second coating liquid are provided as a spin-on hard mask (SOH) liquid. 9. The method of claim 8,
Wherein the chemical comprises a thinner. 12. The method according to any one of claims 9 to 11,
In the first coating step, the first coating liquid is applied to the concave portion between the patterns and the upper surface of the pattern,
Wherein the etching process is performed on the entire upper surface of the substrate,
Wherein in the second coating step, the second coating liquid is applied so that the upper surface of the pattern and the second coating layer formed on the upper surface of the first coating layer filled in the recess are formed to be flat. delete 9. The method of claim 8,
Wherein the heat treatment step performed between the first coating step and the etching step and the heat treatment step performed after the second coating step are different from each other in the temperature for heating the substrate.

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