JP2009260022A - Substrate treatment unit, and substrate treatment apparatus - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a technique for suppressing outflowing of a treatment gas used for a treatment to outside a unit. <P>SOLUTION: A contact enhancement treatment unit 1 which performs a contact enhancement treatment includes a chamber 10 which forms a sealed treatment space V, a treatment gas supply portion 50 which supplies a predetermined treatment gas (vaporized contact enhancing agent) to the treatment space V, and a plate 20 which is disposed in the treatment space V and mounted with a substrate W. An insertion hole 22 is formed in the plate 20, and a support pin 30 which is elevated to thrust up and supports the reverse surface of the substrate W is inserted into the insertion hole 22. The gap between the insertion hole 22 and support pin 30 is sealed by a sealing portion 80. <P>COPYRIGHT: (C)2010,JPO&INPIT

Description

  The present invention can be applied to semiconductor substrates, glass substrates for liquid crystal display devices, substrates for plasma displays, substrates for optical disks, substrates for magnetic disks, substrates for magneto-optical disks, glass substrates for photomasks (hereinafter simply referred to as “substrates”). The present invention relates to a substrate processing unit and a substrate processing apparatus that perform processing on the substrate.

  As is well known, products such as semiconductors and liquid crystal displays are manufactured by performing a series of processes such as cleaning, resist coating, exposure, development, etching, interlayer insulation film formation, heat treatment, and dicing on the substrate. Has been.

  Conventionally, there has been a problem that the resist film is peeled off from the substrate surface in processes such as exposure, development, and etching, and in order to avoid this, a process for improving the adhesion between the substrate surface and the resist film (adhesion strengthening) Processing). The adhesion strengthening process is a process of hydrophobizing the substrate surface before the resist film is formed. Specifically, the adhesion enhancing agent (for example, HMDS (hexamethyldisilazane)) is vaporized to form a substrate surface. It is performed by applying to. For example, Patent Document 1 discloses a conventional configuration of a processing unit that performs an adhesion strengthening process.

  FIG. 13 illustrates a conventional configuration of a processing unit that performs the adhesion strengthening process. The conventional adhesion strengthening processing unit 9 includes a processing chamber 91 capable of forming a sealed processing space V, a plate 92 on which the substrate W is placed in the processing space V, and vapor of an adhesion reinforcing agent in the processing space V. An introduction port 93 to be introduced and an exhaust port 94 connected to the exhaust line are provided. The plate 92 is provided with a plurality (for example, three) of support pins 95 that support the back surface of the substrate W. In addition, the support pin 95 has a support position (a position where the tip protrudes above the substrate placement surface of the plate 92 (position shown in FIG. 13C)) and a retracted position (the tip is placed on the substrate mounting surface). A drive mechanism 96 is connected to move between the mounting surface and a position buried on the same surface or below (the positions in FIGS. 13A and 13B).

  The flow of processing executed in the adhesion reinforcement processing unit 9 is as follows. When the substrate W carried into the processing chamber 91 is placed on the plate 92, the processing space V is set as a sealed space, and the adhesion reinforcing agent vaporized from the introduction port 92 is sealed therein (FIG. 13 ( a)). The adhesion enhancing agent introduced into the processing space V is liquefied on the surface of the substrate W, and thereby the adhesion enhancing agent is applied to the surface of the substrate W. Subsequently, the adhesion reinforcing agent filled in the processing space V is exhausted from the exhaust port 94 (FIG. 13B). Subsequently, the processing chamber 91 is opened, and the support pin 95 is moved from the retracted position to the support position. As a result, the substrate W is in a state of being point-supported by the support pins 95 from the state of being placed on the plate 92 (FIG. 13C). In this state, an external transport mechanism (not shown) unloads the substrate W from the processing chamber 91.

  As described above, the adhesion reinforcement processing is performed in the sealed processing space V. One of the reasons is that HMDS, which is generally used as an adhesion enhancer, is a chemical solution that is harmful to the human body and cannot be allowed to leak out of the processing chamber 91. Another reason is that HMDS is an ammonia-based chemical, and if this flows out, it will adversely affect the subsequent lithography process. If the ammonia-based gas is adsorbed on the photosensitizer, the photosensitivity is lost, and the development process is not performed properly. Even HMDS of only about 1 ppb has been found to affect the photosensitizer. For these reasons, the adhesion strengthening process must be performed in a sealed space, and in particular when the process is completed and the processing space is opened, the adhesion strengthening agent used in the process must be reliably recovered without flowing out. I must.

JP 2000-150368 A

  However, in the conventional adhesion strengthening processing unit, the collection of the adhesion enhancing agent is incomplete, and it has been difficult to suppress leakage to the outside. One possible reason is the retention space of the adhesion reinforcing agent formed in the processing unit. As illustrated in FIG. 13, the drive mechanism 96 of the support pin 95 must move the support pin 95 up and down while isolating it from the outside (outside of the processing chamber 91). For this purpose, for example, as shown in the configuration example of FIG. 13, the periphery of the support pin 95 is covered with a bellows pipe 97, and the support pin 95 is moved up and down while being isolated from the outside by extending and contracting. However, the adhesion reinforcing agent inside the bellows pipe 97 is not easily exhausted, and this inside tends to be a retention space for the adhesion reinforcing agent. It is considered that the adhesion reinforcing agent remaining in the staying space flows out to the outside when the processing chamber 91 is opened (state shown in FIG. 13C).

  This invention is made in view of the said subject, and it aims at providing the technique which can suppress the outflow to the exterior of process space of the process gas supplied to process space.

  The invention of claim 1 is a substrate processing unit, which is a chamber for forming a sealed processing space, supply means for supplying a predetermined processing gas into the processing space, and a processing unit disposed in the processing space. A plate on which a processing substrate is placed, a substrate support position that is inserted into an insertion hole formed in the plate, the tip of which protrudes above the placement surface of the plate, and the tip is the placement surface described above A rod-like support pin movable between a retracted position buried on the same surface or below it, and a sealing means for sealing a gap between the support pin placed in the retracted position and the insertion hole; .

  According to a second aspect of the present invention, in the substrate processing unit according to the first aspect, the sealing means is formed at an upper end portion of the support pin.

According to a third aspect of the present invention, in the substrate processing unit according to the first or second aspect, the sealing means includes an annular outer peripheral member provided around the support pin and an inner wall of the insertion through hole. An engaging portion that forms a step that engages with the bottom surface of the outer peripheral member when the pin is in the retracted position; and a sealing member that seals between the bottom surface of the outer peripheral member and the engaging portion. .

  According to a fourth aspect of the present invention, there is provided the substrate processing unit according to any one of the first to third aspects, wherein an exhaust unit that forms a negative pressure at the exhaust port and sucks the processing gas in the processing space from the exhaust port. And pressure dispersion means for dispersing the negative pressure formed at the exhaust port over the entire circumference of the plate.

  A fifth aspect of the present invention is the substrate processing unit according to the fourth aspect, wherein the pressure dispersing means is provided between an exhaust groove disposed around the plate, and between the exhaust groove and the exhaust port. A buffer space to be formed; and one or more labyrinth rings arranged in the buffer space.

  A sixth aspect of the present invention is the substrate processing unit according to the fourth aspect, wherein the pressure dispersing means is disposed between an exhaust groove disposed around the plate, and between the exhaust groove and the exhaust port. A buffer space to be formed; and a baffle plate having a porosity disposed in the buffer space.

  A seventh aspect of the present invention is the substrate processing unit according to any one of the first to sixth aspects, wherein the predetermined processing gas is a vaporized adhesion reinforcing agent.

  The invention of claim 8 is a substrate processing apparatus that is arranged adjacent to a predetermined external device and performs a series of processing on a substrate, each of which includes one or more processing units that perform predetermined processing on a substrate, A processing unit that includes a main transport mechanism that transports the substrate to the processing unit in a predetermined order; and an interface transport mechanism that transports the substrate between the processing unit and the external device. Any one of the above processing units is disposed in the processing space, a chamber that forms a sealed processing space, a supply unit that supplies a predetermined processing gas into the processing space, and a substrate to be processed is placed thereon And a substrate support position that is inserted into an insertion hole formed in the plate, the tip of which protrudes upward from the placement surface of the plate, and the tip is on the same plane as the placement surface or A support pin movable between a retracted position buried below and a sealing means for sealing a gap between the support pin and the insertion hole in a state where the support pin is in the retracted position. Prepare.

  According to the first aspect of the present invention, the space between the support pin and the insertion hole is sealed by the sealing means in a state where the support pin is in the retracted position. According to this configuration, since a member (separate packaging member) for isolating the support pin from the outside of the processing space is not required, a situation in which a processing gas retention space is formed inside the hermetic packaging member does not occur. That is, it becomes difficult for the processing gas to remain in the processing space. Thereby, the outflow of the processing gas supplied to the processing space to the outside of the processing space can be suppressed.

  According to the invention of claim 2, since the sealing means is attached to the upper end portion of the support pin, it is formed inside the insertion hole and above the support pin when the support pin is in the retracted position. The retention space can be minimized. As a result, the processing gas is less likely to remain in the processing space, and the outflow of the processing gas to the outside of the processing space can be more effectively suppressed.

  According to invention of Claims 4-6, the negative pressure formed in an exhaust port can be disperse | distributed to the perimeter of a plate, and the exhaust pressure of a plate periphery can be made uniform. That is, the processing space can be exhausted uniformly, and the processing gas can be reliably recovered. Thereby, the possibility that the processing gas flows out of the processing space can be further reduced.

  According to the invention of claim 7, since the vaporized adhesion enhancing agent can be prevented from flowing out of the processing space, it is safe. Further, for example, even when processing units that perform lithography process processing are arranged around, the adhesion enhancing agent does not affect these processing units. Therefore, appropriate processing can be performed in these adjacent processing units.

  According to the eighth aspect of the present invention, the processing gas supplied to the processing space in any of the processing units does not flow out of the processing space. Therefore, no contamination occurs between the processing units.

<1. Adhesion Strengthening Treatment Unit>
<1-1. Constitution>
An overall configuration of an adhesion strengthening processing unit 1 which is a substrate processing unit according to an embodiment of the present invention will be described with reference to FIG. FIG. 1 is a side sectional view of the adhesion reinforcement processing unit 1.

  The adhesion strengthening processing unit 1 performs an adhesion strengthening process (a process of heating the substrate W in a vapor atmosphere of an adhesion enhancing agent in order to improve the adhesion between the resist film and the substrate W).

  The adhesion-strengthening processing unit 1 includes a chamber 10 that forms a sealed processing space V therein, a plate 20 that places the substrate W to be processed in a horizontal posture in the chamber 10, and a plate 20 that is placed on the plate 20. A plurality of (three in this embodiment) support pins 30 that push up and support the formed substrate W, a heating unit 40 that heats the plate 20 to a predetermined temperature, and a predetermined processing gas in the processing space V A processing gas supply unit 50 that supplies (here, a vaporized adhesion enhancing agent) and an exhaust unit 60 that exhausts the processing gas supplied to the processing space V are provided. Moreover, the control part 90 which controls operation | movement of these each part is provided.

<Chamber 10>
The chamber 10 is a housing configured using a metal material such as stainless steel, for example, and forms a sealed processing space V therein. The chamber 10 includes a peripheral wall 11 attached around the plate 20. The upper opening of the peripheral wall 11 can be opened and closed by a lid 12.

  The lid 12 is connected to the lid driving mechanism 13. The lid drive mechanism 13 includes a lid 12 in a sealed position (a position where the lid 12 is in sliding contact with a seal member 14 (for example, an O-ring) fixed to the upper surface of the peripheral wall 11) and an open position (a position above the sealed position). Move up and down between. The lid driving mechanism 13 is electrically connected to the control unit 90 and switches the position of the lid 12 between a sealed position and an open position in accordance with control from the control unit 90. When the lid 12 is placed in a sealed position, the processing space V formed between the lid 12 and the peripheral wall 11 becomes a sealed space that is blocked from the external atmosphere. In addition, when the lid 12 is placed in the open position, the external transport mechanism can carry the substrate W into and out of the processing space V (the state shown in FIG. 4C).

  The lid 12 is formed with an introduction hole 121 for introducing a processing gas into the processing space V. One end of the introduction hole 121 is connected to the line 54 for guiding the processing gas, and the other end is opened at the center of the lower surface of the lid 12. Thus, the processing gas can be introduced near the center of the substrate W held on the plate 20.

<Plate 20>
For example, three proximity balls 21 made of ceramics are embedded in the upper surface of the plate 20. The substrate W to be processed is placed on the plate 20 via a proximity ball 21 with a predetermined gap (for example, 0.1 mm).

  In the plate 20, a plurality of through holes (insertion holes 22) formed in the vertical direction are formed so that each of the plurality of support pins 30 can be inserted.

<Support pin 30>
The plurality of support pins 30 are rod-shaped members that are inserted through insertion holes 22 formed in the plate 20 and push up and support the substrate W placed on the plate 20 at the tip thereof.

  Each of the plurality of support pins 30 is connected to a support pin drive mechanism 31 disposed below the plate 20. The support pin drive mechanism 31 is composed of, for example, an air cylinder, and the plurality of support pins 30 are lifted and lowered simultaneously by the air cylinder.

  The support pin drive mechanism 31 supports the support pin 30 at a support position (a position where the tip portion protrudes upward from the placement surface of the plate 20) and a retracted position (the tip portion is on the same plane as the placement surface of the plate 20). It is moved up and down with respect to the position buried below it. The support pin drive mechanism 31 is electrically connected to the control unit 90 and switches the position of the support pin 30 between a support position and a retracted position in accordance with control from the control unit 90. When the support pin 30 is placed in the support position, the substrate W placed on the plate 20 is lifted from the plate 20 and the back surface thereof is point-supported by the tip of the support pin 30 (FIG. 4C). ) State). Further, when the support pin 30 is placed in the retracted position, the substrate W is placed on the plate 20 (the state shown in FIGS. 1, 4A, and 4B).

  A sealing portion 80 is provided between the support pin 30 and the insertion hole 22 through which the support pin 30 is inserted to seal the gap between the support pin 30 and the insertion hole 22 in a state where the support pin 30 is in the retracted position. Yes. The sealing unit 80 will be described later.

<Heating unit 40>
The heating unit 40 is a heater that is built in the plate 20 and heats the plate 20 to a predetermined temperature. The heating unit 40 is electrically connected to the control unit 90 and adjusts the temperature of the plate 20 to a predetermined set temperature in accordance with the control from the control unit 90.

<Processing gas supply unit 50>
The processing gas supply unit 50 includes an adhesion reinforcing agent supply source 51 and a vaporization processing device 52 that vaporizes the adhesion reinforcing agent supplied from the adhesion reinforcing agent supply source 51. The adhesion reinforcing agent supplied from the adhesion reinforcing agent supply source 51 and vaporized by the vaporization processing device 52 is guided to the introduction hole 121 through the line 54 in which the valve 53 is inserted. The valve 53 is electrically connected to the control unit 90 and is controlled to open and close according to the control of the control unit 90.

The vaporization processing device 52 includes a liquid distillation container 521 that stores an adhesion enhancer. The liquid container 521 is connected to the adhesion reinforcing agent supply source 51 via a supply pipe 523 in which a valve 522 is inserted. As the adhesion enhancer, for example, HMDS (hexamethyldisilazane) can be used. Further, the liquid distillation vessel 521 is connected to an inert gas supply source 526 through a supply pipe 525 in which a regulator 524 is inserted. As the inert gas, for example, nitrogen gas (N ₂ ) or argon gas (Ar) can be used. Further, a heat exchange coil 527 is attached to the lower part of the liquid distillation vessel 521. When a current is supplied to the heat exchange coil 527 from a current supply source (not shown), the temperature of the heat exchange coil 527 rises. Thereby, the adhesion enhancing agent stored in the liquid distillation vessel 521 is vaporized. The liquid container 521 is connected to the line 54, and the adhesion enhancing agent vaporized in the liquid container 521 is guided to the introduction hole 121 through the line 54. Each part of the valve 522 and the regulator 524 is electrically connected to the control unit 90 and is controlled according to control from the control unit 90.

  The control unit 90 controls the regulator 524 and the valve 522 to store the inert gas and the adhesion reinforcing agent in the liquid distillation vessel 521 and increase the temperature of the heat exchange coil 527 to store it in the liquid distillation vessel 521. Vaporize the applied adhesion enhancer. Then, the valve 53 is controlled to guide the adhesion enhancing agent vaporized in the liquid distillation vessel 521 to the line 54. As a result, the vaporized adhesion reinforcing agent is supplied from the processing gas supply unit 50 to the introduction hole 121.

<Exhaust part 60>
The exhaust part 60 includes an exhaust groove 61 formed over the entire circumference of the plate 20 and one exhaust port 63 connected to the exhaust groove 61.

  The exhaust port 63 is connected to the drain tank 632 through the recovery line 631. A pump P is inserted in the recovery line 631, whereby a negative pressure (exhaust pressure) can be formed in the exhaust port 63. When a negative pressure is formed at the exhaust port 63, the processing gas in the processing space V is guided from the exhaust groove 61 to the drain tank 632 through the exhaust port 63, and the processing space V is exhausted. The pump P is electrically connected to the control unit 90 and adjusts the pressure of the exhaust port 63 according to the control from the control unit 90.

  For example, even if the exhaust port 63 is directly connected to the exhaust groove 61, the processing gas in the processing space V can be exhausted from the exhaust groove 61 by forming a negative pressure at the exhaust port 63. However, according to this configuration, out of the entire exhaust groove 61 (that is, the entire circumference of the processing unit 20), the exhaust can be rapidly exhausted with a large negative pressure near the connection position of the exhaust port 63. In the region, the negative pressure is small and almost no exhaust is possible. That is, the exhaust pressure is uneven in the entire exhaust groove 61. In this case, there is a high possibility that the processing gas remains in a partial region of the processing space V. As a method for avoiding this, it is conceivable to provide a plurality of exhaust ports 63, preferably as many as possible. However, when the number of the exhaust ports 63 is increased, the number of the recovery lines 631 is also increased, and the unit size is pressed. Further, it is not preferable from the viewpoint of manufacturing cost.

  Therefore, in this embodiment, a functional unit (buffer 62) that distributes the exhaust pressure formed at the exhaust port 61 over the entire exhaust groove 61 (that is, the entire circumference of the plate 20) is provided.

  The buffer 62 includes a buffer space 621 formed between the exhaust groove 61 and the exhaust port 63, and a plurality of labyrinth rings 622 disposed in the buffer space 621. As the labyrinth ring 622, for example, circular plates having different widths can be used. The annular plate may be formed with a cutting region, a notch region, or the like. The plurality of labyrinth rings 622 are arranged in multiple stages along the exhaust direction (the direction from the exhaust groove 61 to the exhaust port 63) so that the cut regions and the cutout regions are staggered. As a result, a labyrinth structure is formed in the buffer space 621.

  By providing the buffer space 621 in which the labyrinth structure is formed between the exhaust groove 61 and the exhaust port 63, the exhaust pressure formed in the exhaust port 63 is spread over the entire area of the exhaust groove 61 (that is, the entire plate 20). Can be distributed evenly (over the circumference). Therefore, the processing gas can be exhausted uniformly from the entire exhaust groove 61 (that is, the entire circumference of the plate 20), and the occurrence of a situation in which the processing gas remains in a partial region in the processing space V is prevented. be able to. According to this configuration, it is not necessary to provide a plurality of sets of the exhaust ports 63 and the recovery lines 631 connected thereto, and a uniform exhaust pressure is formed over the entire circumference of the plate 20 by one set of the exhaust ports 63 and the recovery lines 631. It becomes possible to do.

<Sealing part 80>
The configuration of the sealing unit 80 will be specifically described with reference to FIG. FIG. 2 is a diagram illustrating a configuration of the sealing unit 80. As described above, the sealing portion 80 is a functional portion that seals the gap between the support pin 30 and the insertion hole 22 in a state where the support pin 30 is in the retracted position, and the support pin 30 and the insertion hole through which the support pin 30 is inserted. 22 is provided.

  The sealing part 80 includes a ring 81, a concave part 82, and a seal part 83.

  The ring 81 is an annular plate-shaped member that is provided around the support pin 30. The outer peripheral surface of the support pin 30 is joined to the inner peripheral surface of the ring 81, so that the ring 81 and the support pin 30 are joined together without a gap. The lower surface of the ring 81 forms a step (locking protrusion 811) on the outer edge of the support pin 30.

  The recess 82 is a recess having a circular cross section formed on the surface of the plate 20 at a position concentric with the insertion hole 22. The diameter of the recess 82 is set larger than the diameter of the insertion hole 22 and further larger than the outer diameter of the ring 81. The bottom surface of the recess 82 forms a step (locking step portion 821) that engages with the bottom surface (locking projection portion 811) of the ring 81 when the support pin 30 is in the retracted position on the inner wall of the insertion hole 22. To do. That is, the locking projection 811 is locked to the locking step 821 in a state where the support pin 30 is in the standby position.

  The seal portion 83 is a seal member that seals between the locking projection portion 811 and the locking step portion 821, and is configured by, for example, an O-ring or a surface touch seal. That is, in the state where the support pin 30 is in the standby position, the gap between the locking step portion 821 and the locking projection portion 811 locked thereto is sealed by the seal portion 83. Thereby, the space between the support pin 30 and the insertion hole 22 is sealed.

  Here, the gap space between the ring 81 and the recess 82 is preferably as small as possible. If the gap space becomes smaller, the amount of the processing gas staying there decreases, so that the processing gas hardly remains in the processing space V, and the processing gas inside the processing space V is completely exhausted by the exhaust part 60. Because you can.

  In order to reduce the gap space, it is desirable to form the sealing portion 80 at a position as close as possible to the upper end of the support pin 30. More specifically, it is desirable to attach the ring 81 to a position as close as possible to the upper end of the support pin 30, and the upper surface of the ring 81 (upper surface of the annular plate) is the tip surface of the support pin 30 (tip surface of the rod). It is most desirable to be flush with the other. In particular, when the retracting position of the support pin 30 is at the same end as the substrate mounting surface of the plate 20, the support pin 30 can be provided if the upper side surface of the ring 81 is flush with the end surface of the support pin 30. This is because no gap space is formed on the upper side of the ring 81 in the standby position (the state shown in FIG. 2).

  When the upper surface of the ring 81 and the tip surface of the support pin 30 are flush with each other, the support pin 30 is in the support position (the retracted position of the support pin 30 is the tip of the substrate mounting surface). When the support pins 30 are in the retracted position), the substrate W is supported on the upper surface of the ring 81. Therefore, in this case, a proximity ball 8111 made of ceramics may be embedded in the upper surface of the ring 81. Further, the upper surface of the ring 81 and the tip of the support pin 30 are molded so as to form a smooth conical surface, and the substrate W is at the tip of the cone in a state where the support pin 30 is in the support position. It is good also as a structure supported by a point.

  In order to reduce the gap space, it is desirable that the separation distance between the inner peripheral surface of the recess 82 and the outer peripheral surface of the ring 81 is small. In other words, it is desirable to set this separation distance to a minimum margin width (a margin margin that prevents the outer peripheral surface of the ring 81 and the inner peripheral surface of the recess 82 from contacting each other when the support pin 30 moves up and down).

  Further, in order to reduce the total volume of the gap space, it is desirable that the volume of the recess 82 is as small as possible. That is, it is desirable that the diameter and depth of the recess 82 be as small as possible. In order to reduce the diameter of the recess 82, the outer diameter of the ring 81 may be reduced (for example, about 10 to 20 mm). That is, the step width of the locking step portion 821 may be set to the minimum value at which the seal portion 83 can be disposed. In order to reduce the depth of the recess 82, it is desirable to mold the ring 81 as thin as possible.

<1-2. Process flow>
Processing executed in the adhesion reinforcement processing unit 1 will be described with reference to FIGS. 3 and 4. FIG. 3 is a diagram illustrating a flow of processing executed in the adhesion reinforcement processing unit 1. FIG. 4 is a diagram schematically showing the state of the adhesion strengthening processing unit 1 in each processing stage. The following processing is performed by the control unit 90 controlling each component of the adhesion reinforcement processing unit 1.

  First, an external transfer mechanism (not shown) (for example, a main robot T21 described later) carries the substrate W to be processed into the adhesion strengthening processing unit 1 and places it on the support pins 30 protruding from the plate 20 (step S1). . When the transport arm of the external transport mechanism is retracted from the apparatus, the control unit 90 controls the support pin driving mechanism 31 to move the support pin 30 from the support position to the retracted position. As a result, the loaded substrate W is placed on the plate 20.

  Subsequently, the control unit 90 controls the lid driving mechanism 13 to place the lid 12 in the sealed position (step S2). As a result, the processing space V becomes a sealed space cut off from the external atmosphere.

  Subsequently, an adhesion strengthening process is performed (step S3) (FIG. 4A). That is, the control unit 90 controls the heating unit 40 to heat the plate 20 to a predetermined temperature. Thereby, the substrate W placed on the plate 20 is heated to a predetermined temperature. At the same time, the processing gas supply unit 50 is controlled to supply the processing gas (vaporized adhesion enhancing agent) to the processing space V. On the other hand, the exhaust unit 60 is controlled to exhaust the processing gas in the processing space V. Thereby, a flow of the processing gas (flowing downward from the introduction hole 121 (that is, toward the center of the substrate W) and further toward the periphery of the substrate W) is formed in the processing space V. The vapor of the adhesion enhancing agent, which is a processing gas, is liquefied on the surface of the substrate W while flowing on the upper surface of the substrate W, whereby the adhesion enhancing agent is applied to the surface of the substrate W. As described above, since the buffer 62 is provided in the exhaust part 60, here, a uniform exhaust pressure is formed over the entire exhaust groove 61 (that is, the entire circumference of the plate 20). Thereby, the processing gas discharged from the introduction hole 121 flows radially toward the periphery of the substrate W, and the adhesion reinforcing agent is uniformly applied to the surface of the substrate W.

When a predetermined amount of the adhesion enhancing agent is supplied to the substrate W, the control unit 90 controls the supply unit 50 to stop the supply of the adhesion enhancing agent, and from the inert gas supply source (not shown) into the processing space V. An inert gas (for example, nitrogen gas (N ₂ ) or argon gas (Ar)) is supplied (step S4) (FIG. 4B). Thereby, the processing gas in the processing space V is exhausted and replaced with an inert gas.

  Subsequently, the control unit 90 controls the lid driving mechanism 13 to place the lid 12 in the open position (step S5).

  Subsequently, the control unit 90 controls the support pin driving mechanism 31 to move the support pin 30 from the retracted position to the support position (FIG. 4C). As a result, the substrate W placed on the plate 20 is pushed up and supported by the support pins 30. In this state, an external transfer mechanism (not shown) (for example, a main robot T21 described later) inserts the transfer arm between the substrate W and the plate 20 to hold the substrate W, and holds the substrate W in the adhesion reinforcement processing unit 1. (Step S6).

<2. Substrate processing equipment>
The above-described adhesion strengthening processing unit P-AHP is mounted on the substrate processing apparatus 100 in which processing units for performing processing such as coating processing, heat treatment, and development processing on the substrate W are arranged at predetermined positions. The substrate processing apparatus 100 on which the adhesion reinforcement processing unit 1 is mounted will be described with reference to FIGS. FIG. 5 is a plan view schematically showing the overall configuration of the substrate processing apparatus 100. 6, 7, 8 and 9 are longitudinal sectional views of the substrate processing apparatus 100 as seen from the direction of the arrow Q1, the direction of the arrow Q2, the direction of the arrow Q3 and the direction of the arrow Q4 shown in FIG. FIG. 10 is a control block diagram of the substrate processing apparatus 100. FIG. 11 is a diagram illustrating a flow of operations repeatedly performed by each of the transport mechanisms included in the substrate processing apparatus 100.

<2-1. Control system>
First, the control system of the substrate processing apparatus 100 will be described with reference to FIG. The substrate processing apparatus 100 includes a control unit (first to fourth controllers 191 to 194 and a main controller 199) that controls operations of the respective constituent units 110, 120, and 130, which will be described later, and an operation unit and a display unit that are user interfaces. (Both are not shown). The control unit is also connected to an exposure apparatus EXP disposed adjacent to the substrate processing apparatus 100 through a LAN line (not shown).

  Each of the first controller 191 to the fourth controller 194 and the main controller 199 includes a CPU that executes various processes, a RAM that is a work area for arithmetic processing, and a preset user interface (or an operation unit, a display unit, and the like). This is implemented by a storage medium (for example, a fixed disk) that stores various information such as a processing recipe (processing program) input by an operator via

  The first controller 191 to the fourth controller 194 control each component described later independently of each other. The first controller 191 controls the transport mechanism (ID robot T10) of the ID unit 10. The second controller 192 controls the transport mechanism (main robot T21) of the upper substrate processing row 201 and the processing units provided in the upper substrate processing row 201 (excluding the processing units provided in the PEB processing unit row 211d). The third controller 193 controls the transport mechanism (main robot T21) of the lower substrate processing row 201 and the processing units provided in the lower substrate processing row 201 (excluding the processing units provided in the PEB processing unit row 211d). The fourth controller 194 controls the transport mechanism (PEB robot T31 and IF robot T32) of the IF unit 30 and the processing unit (heat treatment unit P-HP) included in the PEB processing unit row 211d.

  Note that each of the second controller 192 and the third controller 193 controls the adhesion reinforcement processing unit 1 included in the substrate processing row 201. That is, in the substrate processing apparatus 100, each of these controllers 192 and 193 corresponds to the control unit 90 described above.

  The main controller 199 comprehensively controls the four controllers 191 to 194. In other words, the cooperation of a plurality of transport mechanisms T10, T21, T22, T31, T32 provided in the substrate processing apparatus 100 is controlled. For example, the timing at which each transport mechanism accesses a predetermined placement unit, processing unit, or the like is adjusted. Further, the main controller 199 controls each transport mechanism so that the substrate W is loaded into each processing unit and the exposure apparatus EXP in the same order as the substrate W is unloaded from the carrier C.

<2-2. Configuration and operation of each part>
The substrate processing apparatus 100 is an apparatus for performing a series of processes such as a coating process, a heat treatment, and a development process on the substrate W before and after the exposure process. The substrate processing apparatus 100 mainly includes an indexer unit (ID unit) 110, a processing unit 120, and an interface (IF unit) 130, and these units 110, 120, and 130 are arranged in this order. Further, an exposure apparatus EXP separate from the substrate processing apparatus 100 is connected to the −Y side of the IF unit 130.

<ID part 110>
The ID unit 110 delivers the substrate W to the carrier C that accommodates a plurality of substrates W. The ID unit 110 includes a carrier mounting table 111 on which a plurality (four in this embodiment) of carriers C are mounted in a row and a mechanism (ID robot) T10 for transporting the substrate W. In addition to the FOUP (front opening unified pod) that stores the substrate W in a sealed space, the carrier C may be an OC (open cassette) that exposes the standard mechanical interface (SMIF) pod or the storage substrate W to the outside air. There may be. The ID robot T10 transports the substrate W between the carrier C mounted on the carrier mounting table 111 and the PASSs 1a and 1b.

  Between the ID unit 110 and the processing unit 120 (more specifically, between the ID unit 110 and each substrate processing row 201 described later), the substrate W between the main robot T21 and the ID robot T10 The placement units (PASS1a, PASS1b) used for delivery are stacked and arranged (see FIGS. 5 and 7).

  Please refer to FIG. The ID robot T10 successively transfers the unprocessed substrates accommodated in the carrier C to the PASS 1a. This unprocessed substrate W is received by the main robot T21 via the PASS 1a. Further, the ID robot T10 receives the processed substrate placed on the PASS 1b by the main robot T21 and stores it in the carrier C.

  Although not shown in FIG. 11, in a configuration in which a plurality (two in this case) of substrate processing rows 201 are stacked as in this embodiment (see FIG. 7), the ID The robot T10 sequentially accesses the PASS 1a and PASS 1b provided for each substrate processing row 201.

<Processing unit 120>
The processing unit 120 includes a plurality (two in this embodiment) of substrate processing rows 201 arranged in a stacked manner. The substrate processing sequence 201 constitutes a processing sequence connecting the ID unit 110 and the IF unit 130. The substrate processing row 201 includes a mechanism (main robot T21) for transporting the substrate W and two processing blocks (mainly a heat treatment block 21 for mainly performing heat treatment on the substrate W with the transport space A of the main robot T21 interposed therebetween. And a liquid processing block 22) for performing liquid processing for supplying a predetermined processing liquid mainly to the substrate W.

  The heat treatment block 21 will be described with reference to FIGS. The heat treatment block 21 includes a plurality of unit rows 211 arranged adjacent to each other.

  The unit row 211 (first unit row 211a) arranged on the side closest to the ID section 110 is composed of a plurality of (in this embodiment, five) processing units (more specifically, in this embodiment) 1 heat treatment unit P-HP, 2 adhesion strengthening treatment units 1 and 2 cooling units CP).

  The configuration of the adhesion reinforcement processing unit 1 and the flow of processing executed here are as described above.

  The thermal processing unit P-HP includes a temporary placement unit 251 for temporarily placing the substrate W, a hot plate 252 for heat-treating the substrate W, and the substrate W between the temporary placement unit 251 and the hot plate 252. It is a processing unit including a local transport mechanism 253 for transporting. The flow of processing executed here is as follows. When the main robot T21 places the substrate W on the temporary placement unit 251, the local transport mechanism 253 transfers the substrate W from the temporary placement unit 251 to the hot plate 252. Then, the hot plate 252 is heated and the substrate W placed thereon is heat-treated. When the heat treatment is completed, the local transport mechanism 253 again transfers the substrate W from the hot plate to the temporary placement unit 251, and the substrate W placed on the temporary placement unit 251 is taken out by the main robot T21. The temporary placement unit 251 may have a function of cooling the substrate W placed thereon.

  The cooling unit CP is a processing unit including a cold plate that cools the substrate W. When the main robot T21 places the substrate W on the cold plate adjusted to a predetermined cooling temperature, heat flows from the substrate W to the cold plate, thereby cooling the substrate W. When the cooling process is completed, the substrate W placed on the cold plate is taken out by the main robot T21.

  The unit row 211 (second unit row 211b) arranged adjacent to the IF unit 130 side of the first unit row 211a includes a plurality of (in this embodiment, five) heat treatment units P-HP arranged in a stacked manner. Is provided.

  The unit row 211 (third unit row 211c) arranged on the IF unit 130 side of the second unit row 211b includes an edge exposure unit EEW that exposes the peripheral portion of the substrate W. On the lower side, a plurality of buffers (feed buffer BF) arranged in a stack may be provided.

  The unit row 211 (PEB processing unit row 211d) arranged on the IF unit 130 side of the third unit row 211c includes a plurality (three in this embodiment) of heat treatment units P-HP arranged in a stacked manner. Prepare. In the heat treatment unit P-HP arranged in the unit row 211d, heat treatment (PEB (post-exposure-bake) processing) performed subsequent to exposure is performed. In addition, a placement unit (feed PASS / return PASS) used for delivery of the substrate W between the main robot T21 and the PEB robot T31 is disposed above the PEB processing unit row 211d.

  The liquid processing block 22 will be described with reference to FIGS. The liquid processing block 22 includes a plurality of unit rows 221 arranged in a stacked manner.

  The unit row 221 (development unit row 221a) arranged at the uppermost stage includes a plurality (two in this embodiment) of development processing units DEV arranged adjacent to each other.

  The development processing unit DEV mainly includes a rotation holding unit 261 that rotatably holds the substrate W, a developing nozzle 262 that supplies a developing solution to the substrate W held by the rotation holding unit 261, and a rinse nozzle 263 that supplies a rinsing liquid. Is a processing unit. The flow of processing executed here is as follows. When the main robot T21 places the substrate W on the rotation holding unit 261, the rotation holding unit 261 holds the substrate W placed thereon. Subsequently, the developer nozzle 262 supplies the developer to the surface of the substrate W. For example, a slit nozzle in which a slit having a length corresponding to the diameter of the substrate W is formed on the lower surface thereof scans above the substrate W held by the rotation holding unit 261 while discharging the developer from the slit. Then, a developer is supplied to the surface of the substrate W in a strip shape. As a result, the substrate W is developed. Subsequently, the rinse nozzle 263 supplies a rinse liquid to the surface of the substrate W to stop the development process. Subsequently, the substrate to be processed W held by the rotation holding unit 261 is rotated, and the rinse liquid on the substrate surface is scattered by centrifugal force. As a result, the substrate W is dried. When the drying process is completed, the main robot T21 carries the substrate W out of the development processing unit DEV.

  The unit row 221 (resist unit row 221b) arranged on the lower side of the developing unit row 221a includes a plurality (two in this embodiment) of resist coating processing units RES arranged adjacent to each other.

  The resist coating processing unit RES mainly includes a rotation holding unit (not shown) that rotatably holds the substrate W, and a nozzle (not shown) that supplies a predetermined resist film material to the substrate W held by the rotation holding unit. The processing unit includes an edge rinse nozzle (not shown) for supplying a rinse liquid to the peripheral edge of the substrate W. The flow of processing executed here is as follows. When the main robot T21 places the substrate W on the rotation holding unit, the rotation holding unit holds the substrate W placed thereon. Subsequently, a nozzle for supplying the resist film material supplies the resist film material to the surface of the substrate W. Thus, a resist film is applied and formed on the upper surface of the substrate W. Subsequently, the edge rinse nozzle supplies the rinse liquid to the peripheral surface of the substrate W. As a result, the resist film formed in the region having a predetermined width from the peripheral edge of the substrate W is removed. When the above processing is completed, the main robot T21 carries the substrate W out of the resist coating unit RES.

  Please refer to FIG. The main robot T21 moves the unprocessed substrate W received from the ID robot T10 via the PASS 1a along the transfer space A while facing each of the processes provided in the heat treatment block 21 and the liquid treatment block 22 Transport to the unit in a predetermined order. For example, the cooling unit CP, the adhesion reinforcement processing unit 1, the resist coating processing unit RES, the heat treatment unit P-HP, the cooling unit CP, and the edge exposure unit EEW are conveyed in this order. As a result, a series of processes including a cooling process, an adhesion strengthening process, a resist film coating process, a heating process, a cooling process, and an edge exposure process are performed on the substrate W in this order (before) processing).

  The main robot T21 sends the substrate W taken out from the edge exposure unit EEW (the substrate after pretreatment) and places it on the PASS. This substrate W is received by the PEB robot T31 via the feed PASS.

  Further, the main robot T21 moves the substrate W (the substrate after PEB processing) received from the PEB robot T31 via the return PASS along the transfer space A, and each processing included in the heat treatment block 21 and the liquid processing block 22 is performed. It is again transported to the unit in a predetermined order. For example, the developing unit DEV, the heat treatment unit P-HP, and the cooling unit CP are conveyed in this order. As a result, a series of processes including a development process, a heating process, and a cooling process are performed on the substrate W in this order (post-processing).

  The main robot T21 places the substrate W (post-processed substrate) taken out from the cooling unit CP on the PASS 1b. This substrate W is received by the ID robot T10 via the PASS 1b.

<IF unit 130>
Refer to FIG. 5 again. The IF unit 130 delivers the substrate W between the processing unit 120 and the exposure apparatus EXP. The IF unit 130 includes two transport mechanisms (PEB robot T31 and IF robot T32) as interface transport mechanisms.

  Between the PEB robot T31 and the IF robot T32, placement units (IF feeding PASS, IF returning PASS) used for delivery of the substrate W between these two transport mechanisms are stacked (see FIG. 9). Further, as shown in FIG. 9, a plurality of buffers BF are arranged below (or above) the IF sending PASS and the IF returning PASS. The buffer BF is a processing unit that temporarily stores the substrate W in the apparatus, and can store a plurality of substrates W.

  Please refer to FIG. The PEB robot T31 places the substrate W (the preprocessed substrate) received from the main robot T21 via the feed PASS on the IF feed PASS. However, when the substrate W cannot be placed on the IF feed PASS (for example, when the processing speed of the exposure apparatus EXP cannot catch up with the processing speed of the processing unit 120 and the preprocessed substrate W cannot be loaded into the exposure apparatus EXP). The PEB robot T31 temporarily stores the received substrate W in the buffer BF, and after placing the substrate W in the IF feed PASS again, places the substrate W stored in the buffer BF on the IF feed PASS. Go.

  On the other hand, the IF robot T32 receives the substrate W placed on the IF feed PASS and places it on the delivery unit of the exposure apparatus EXP. The pre-processed substrate W placed on the delivery unit of the exposure apparatus EXP is subjected to exposure processing by the exposure apparatus EXP and returned to the delivery unit again.

  The IF robot T32 receives the substrate W (substrate after the exposure processing) placed on the delivery unit of the exposure apparatus EXP and places it on the IF return PASS.

  On the other hand, the PEB robot T31 receives the substrate W placed on the IF return PASS and carries it into the thermal processing unit P-HP arranged in the PEB processing unit row 211d. More specifically, it is placed on the temporary placement part 251 of the heat treatment unit P-HP. The substrate W placed on the temporary placement unit 251 is transferred onto the hot plate 252 by the local transport mechanism 253, and is subjected to heat treatment (PEB treatment). The processed substrate W is again transferred onto the temporary placement unit 251 by the local transport mechanism 253. Thereby, a series of processes of the exposure process and the PEB process are performed on the substrate W in this order.

  The PEB robot T31 takes out the substrate W (substrate after PEB processing) placed on the temporary placement unit 251 of the heat treatment unit P-HP arranged in the PEB processing unit row 211d, and places it on the return PASS. This substrate W is received by the main robot T21 via the return PASS and subjected to post-processing. However, when the substrate W cannot be placed on the return PASS (for example, when a trouble occurs in the development processing unit DEV and the unit cannot accept the substrate W), the PEB robot T31 places the taken substrate W in the buffer BF. After the substrate W is temporarily stored and the substrate W can be placed on the return PASS again, the substrate W stored in the buffer BF is placed on the return PASS.

  With the above-described configuration and operation, a series of processes such as a coating process, a heat treatment, and a development process before and after the exposure process are performed.

<3. effect>
In the adhesion strengthening processing unit 1 according to the above-described embodiment, the space between the support pin 30 and the insertion hole 22 is sealed by the sealing portion 80 in a state where the support pin 30 is in the retracted position. According to this configuration, a hermetic member (for example, a member such as the bellows pipe 97 shown in FIG. 13) for isolating the support pins 30 from the outside of the processing space V is not necessary, and the processing gas is contained inside the hermetic member. This does not cause a situation in which a staying space is formed. That is, the processing gas hardly remains in the processing space V, and the processing gas inside the processing space V can be completely exhausted by the exhaust unit 60. Thereby, it is possible to prevent the processing gas supplied to the processing space V from flowing out of the processing space.

  If a member (separate member) for isolating the support pin 30 such as the bellows pipe 97 from the outside of the processing space V is provided, the structure under the plate becomes complicated and large (for example, a normal hot plate). It will be about 1.5 times the size). As a result, the manufacturing cost increases and the unit size increases. Moreover, since this hermetic member must be expanded and contracted in order to raise and lower the support pin, the raising and lowering drive mechanism becomes large. This also contributes to an increase in unit size and manufacturing cost. On the other hand, according to said structure, since such a hermetic member becomes unnecessary, the structure of the plate lower part can be simplified and reduced in size. In particular, the height dimension of the unit can be reduced. In addition, the manufacturing cost can be reduced. Further, it is possible to adopt a small support pin raising / lowering drive mechanism, which also contributes to the downsizing of the unit and the reduction of the manufacturing cost.

  Further, since the ring 81 is attached to the upper end portion of the support pin 30, when the support pin 30 is in the retracted position, the stay space formed above the support pin 30 inside the insertion hole 22 is minimized. Can be. In particular, when the retracted position of the support pin 30 is on the same plane as the substrate mounting surface of the plate 20, according to this configuration, the gap is formed above the ring 81 in a state where the support pin 30 is in the standby position. A space is not formed. As a result, the processing gas is less likely to remain in the processing space, and the outflow of the processing gas to the outside of the processing space can be more effectively suppressed.

  Further, by forming the buffer 62, the negative pressure formed at the exhaust port 63 can be distributed over the entire exhaust groove 61 (that is, the entire circumference of the plate), and the exhaust pressure at the periphery of the plate can be made uniform. . That is, the processing space can be exhausted uniformly, and the processing gas can be reliably recovered. Accordingly, the possibility that the processing gas flows out of the processing space V can be further reduced.

  By providing the buffer 62, uniform exhaust can be realized with a small number of exhaust lines (one in the above embodiment), which contributes to downsizing of the unit and reduction of manufacturing costs. .

  Moreover, in the adhesion strengthening processing unit 1 according to the above-described embodiment, a vaporized adhesion reinforcing agent is used as the processing gas. HMDS used as an adhesion strengthening agent is harmful to the human body and has an adverse effect on the lithography process. However, in the adhesion strengthening processing unit 1, the processing gas is outside the processing space V as described above. It is safe because it can be prevented from leaking out. Further, for example, even when processing units that perform lithography process processing are arranged around, the adhesion enhancing agent does not affect these processing units. Therefore, appropriate processing can be performed in these adjacent processing units.

  Moreover, according to the substrate processing apparatus 100 according to the above-described embodiment, the processing unit 20 includes the adhesion reinforcement processing unit 1. In the adhesion strengthening processing unit 1, as described above, the processing gas can be prevented from flowing out of the processing space V, so that the processing gas used for processing in the adhesion reinforcing processing unit 1 leaks to the outside of the unit. I do not put out. Therefore, contamination does not occur between the development processing unit DEV arranged to face the adhesion reinforcement processing unit 1 with the conveyance space A interposed therebetween. That is, a situation in which the adhesion enhancing agent is adsorbed to the photosensitive agent used in the development processing unit DEV does not occur. Accordingly, appropriate development processing can be performed also in the development processing unit DEV.

  Further, as described above, since the downsizing of the adhesion strengthening processing unit 1 is realized, the number of units that can be mounted on the substrate processing apparatus 100 can be increased. Thereby, throughput can be improved.

  Moreover, since the manufacturing cost reduction of the adhesion reinforcement | strengthening processing unit 1 is implement | achieved as mentioned above, the manufacturing cost of the substrate processing apparatus 100 can also be held down.

<4. Modification>
In the adhesion reinforcement processing unit 1 according to the above-described embodiment, the sealing portion 80 is configured by the ring 81, the concave portion 82, and the seal portion 83. However, the configuration of the sealing portion 80 is not limited to this, and at least the support pin Any mechanism that seals between the support pin 30 and the insertion hole 22 in a state in which 30 is placed in the standby position may be used. For example, a contact seal (so-called mechanical seal) may be used.

  In the above embodiment, the ring 81 has an annular shape and the recess 82 has a circular cross section. However, the shapes of the ring 81 and the recess 82 are not limited thereto. However, in order to reduce the gap space between the ring 81 and the recess 82, it is desirable that the cross-sectional shape of the recess 82 and the shape of the outer peripheral edge of the ring 81 are similar to each other.

  Further, in the adhesion strengthening processing unit 1 according to the above-described embodiment, the buffer 62 includes a plurality of labyrinth rings 622 arranged in the buffer space 621. However, the configuration of the buffer 62 is not limited thereto. For example, as shown in FIG. 12, a baffle plate 623 formed of a porous material (porous) may be provided in the buffer space 621. The baffle plate may be formed with holes by machining.

  In addition, the adhesion strengthening processing unit 1 according to the above embodiment is a processing unit that performs the adhesion strengthening process using the vaporized adhesion reinforcing agent as the processing gas. Not exclusively. That is, the present invention can be applied to a processing unit that executes processes other than the adhesion reinforcement process. In particular, it is effective for a processing unit that performs various processes using a toxic processing gas that is not allowed to flow out to the outside.

  Further, in the adhesion reinforcement processing unit 1 according to the above-described embodiment, each component (the peripheral wall 11, the lid 12, the plate 20, the support pin 30, the exhaust groove 61, the buffer 62, the exhaust port disposed in the processing space V. 63, the sealing part 80, etc.) are exposed to the processing gas at high temperatures. Therefore, it is desirable that each of these components is formed of a material that has both heat resistance and chemical resistance.

  In addition, in the adhesion strengthening processing unit 1 according to the above-described embodiment, in addition to the above-described components, the temporary and temporary substrates W are placed before and after being placed on the plate 20 and subjected to the adhesion strengthening processing. A unit configuration may be provided in which a placement unit and a local transport mechanism that transports the substrate W between the temporary placement unit and the plate 20 are provided.

  In addition, the unit configuration and arrangement of the heat treatment block 21 and the liquid treatment block 22 included in the substrate processing apparatus 100 according to the above embodiment are not limited to those described above. Further, the number of the adhesion reinforcement processing units 1 included in the heat treatment block 21 is not limited to two.

  In the above embodiment, the exposure apparatus EXP is disposed adjacent to the substrate processing apparatus 100, but various other apparatuses may be disposed adjacent to each other.

It is a sectional side view of an adhesion reinforcement processing unit. It is a figure which shows the structure of a sealing part. It is a figure which shows the flow of the process performed in an adhesion reinforcement | strengthening process unit. It is a figure which shows typically the mode of the adhesion reinforcement | strengthening process unit in each process step. 1 is a plan view schematically showing an overall configuration of a substrate processing apparatus 100. FIG. It is the longitudinal cross-sectional view which looked at the substrate processing apparatus from the arrow Q1 direction. It is the longitudinal cross-sectional view which looked at the substrate processing apparatus from the arrow Q2. It is the longitudinal cross-sectional view which looked at the substrate processing apparatus from the arrow Q3 direction. It is the longitudinal cross-sectional view which looked at the substrate processing apparatus from the arrow Q4 direction. It is a control block diagram of a substrate processing apparatus. It is a figure which shows the flow of the operation | movement which each conveyance mechanism performs repeatedly. It is a sectional side view of the adhesion reinforcement processing unit concerning a modification. It is a figure which illustrates the composition of the conventional adhesion reinforcement processing unit.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Contact | adhesion reinforcement | strengthening process unit 10 Chamber 12 Cover 121 Introduction hole 13 Cover drive mechanism 20 Plate 22 Insertion hole 30 Support pin 31 Support pin drive mechanism 40 Heating part 50 Process gas supply part 60 Exhaust part 80 Sealing part 81 Ring 82 Concave part 83 Seal Part 811 Locking projection part 821 Locking step part 100 Substrate processing apparatus 110 ID part 120 Processing part 130 IF part T10 ID robot T21, T22 Main robot T31 PEB robot T32 IF robot

Claims (8)

A substrate processing unit,
A chamber forming a sealed processing space;
Supply means for supplying a predetermined processing gas into the processing space;
A plate disposed in the processing space and on which a substrate to be processed is placed;
A substrate support position that is inserted into an insertion hole formed in the plate and whose tip protrudes upward from the mounting surface of the plate, and whose tip is on the same plane as or lower than the mounting surface. A rod-like support pin movable between a retracted position buried in
Sealing means for sealing a gap between the support pin placed in the retracted position and the insertion hole;
A substrate processing unit comprising: The substrate processing unit according to claim 1,
The substrate processing unit, wherein the sealing means is formed at an upper end portion of the support pin. The substrate processing unit according to claim 1 or 2,
The sealing means is
An annular outer peripheral member provided around the support pin;
An engagement portion that forms a step on the inner wall of the insertion hole to engage with the bottom surface of the outer peripheral member in a state where the support pin is in the retracted position;
A sealing member that seals between the bottom surface of the outer peripheral member and the engaging portion;
A substrate processing unit comprising: The substrate processing unit according to any one of claims 1 to 3,
Exhaust means for forming a negative pressure at the exhaust port and sucking the processing gas in the processing space from the exhaust port;
Pressure dispersion means for dispersing the negative pressure formed at the exhaust port over the entire circumference of the plate;
A substrate processing unit comprising: The substrate processing unit according to claim 4,
The pressure dispersing means is
An exhaust groove disposed around the plate;
A buffer space formed between the exhaust groove and the exhaust port;
One or more labyrinth rings arranged in the buffer space;
A substrate processing unit comprising: The substrate processing unit according to claim 4,
The pressure dispersing means is
An exhaust groove disposed around the plate;
A buffer space formed between the exhaust groove and the exhaust port;
A baffle plate having a porosity disposed in the buffer space;
A substrate processing unit comprising: The substrate processing unit according to any one of claims 1 to 6,
The substrate processing unit, wherein the predetermined processing gas is a vaporized adhesion reinforcing agent. A substrate processing apparatus that is arranged adjacent to a predetermined external device and performs a series of processing on a substrate,
A processing unit comprising one or more processing units each for performing a predetermined process on the substrate, and a main transport mechanism for transporting the substrate to the one or more processing units in a predetermined order;
An interface transport mechanism for transporting a substrate between the processing unit and the external device;
With
Any of the one or more processing units is
A chamber forming a sealed processing space;
Supply means for supplying a predetermined processing gas into the processing space;
A plate disposed in the processing space and on which a substrate to be processed is placed;
A substrate support position that is inserted into an insertion hole formed in the plate and whose tip protrudes upward from the mounting surface of the plate, and whose tip is on the same plane as or lower than the mounting surface. A support pin movable between a retracted position buried in
Sealing means for sealing a gap between the support pin and the insertion hole in a state where the support pin is in the retracted position;
A substrate processing apparatus comprising:

Images