WO2018054471A1 - Support pour supporter un substrat, appareil pour traiter un substrat et procédé associé - Google Patents

Support pour supporter un substrat, appareil pour traiter un substrat et procédé associé Download PDF

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Publication number
WO2018054471A1
WO2018054471A1 PCT/EP2016/072577 EP2016072577W WO2018054471A1 WO 2018054471 A1 WO2018054471 A1 WO 2018054471A1 EP 2016072577 W EP2016072577 W EP 2016072577W WO 2018054471 A1 WO2018054471 A1 WO 2018054471A1
Authority
WO
WIPO (PCT)
Prior art keywords
carrier
substrate
arrangement
heat protection
heat
Prior art date
Application number
PCT/EP2016/072577
Other languages
English (en)
Inventor
Frank Schnappenberger
Original Assignee
Applied Materials, Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials, Inc. filed Critical Applied Materials, Inc.
Priority to PCT/EP2016/072577 priority Critical patent/WO2018054471A1/fr
Publication of WO2018054471A1 publication Critical patent/WO2018054471A1/fr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67103—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67115—Apparatus for thermal treatment mainly by radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67703—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
    • H01L21/67712—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations the substrate being handled substantially vertically
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/6776—Continuous loading and unloading into and out of a processing chamber, e.g. transporting belts within processing chambers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67248—Temperature monitoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks

Definitions

  • Embodiments of the present disclosure relate to carriers for supporting a substrate, and particularly to carriers employed for supporting a substrate during a vacuum deposition process. More specifically, embodiments of the present disclosure relate to carriers including active or passive electric devices. Further embodiments of the present disclosure relate to an apparatus for processing a substrate in a vacuum chamber, particularly for depositing one or more layers on a vertical substrate supported by a substrate carrier. Yet further embodiments of the present disclosure relate to methods used during processing of a substrate, particularly during layer deposition on a vertically supported substrate.
  • substrates may be coated by a physical vapor deposition (PVD) process, a chemical vapor deposition (CVD) process, a plasma enhanced chemical vapor deposition (PECVD) process, etc.
  • PVD physical vapor deposition
  • CVD chemical vapor deposition
  • PECVD plasma enhanced chemical vapor deposition
  • the process is performed in a process apparatus or process chamber, where the substrate to be coated is located.
  • a deposition material is provided in the apparatus.
  • a plurality of materials for example, nitrides or carbides thereof, may be used for deposition on a substrate.
  • other processing methods like etching, structuring, annealing, or the like can be conducted in processing chambers.
  • Coated materials may be used in several applications and in several technical fields.
  • an application lies in the field of microelectronics, such as generating semiconductor devices.
  • substrates for displays are often coated by a PVD process.
  • Further applications include insulating panels, organic light emitting diode (OLED) panels, substrates with TFT (thin film transistor), color filters or the like.
  • OLED organic light emitting diode
  • TFT thin film transistor
  • Some processing systems hold the substrate in a vertical orientation during processing.
  • the temperature within the processing chamber may be controlled at different ranges and may vary between 150 °C to 600°C depending on the process employed.
  • temperature control for the substrate carrier during processing has become challenging as poor control of the temperature of substrate carrier may not only result in material deposition failure, but can also influence the holding of the substrate by the carrier, for instance by thermal expansion of the substrate and the carrier. Therefore, some carriers include temperature measurement systems such that a critical temperature may be detected, at which, e.g. the thermal expansion of the carrier is expected to be too high for a secure holding of the substrate. Further, some carriers include electrostatic chuck assemblies which are used to clamp the substrate to the carrier during substrate processing using electrostatic fields.
  • a carrier for supporting a substrate in a vacuum processing chamber an apparatus for processing a substrate, and a method for cooling an electric device of a carrier for supporting a substrate in a vacuum processing chamber, according to the independent claims, are provided.
  • a carrier for supporting a substrate in a vacuum processing chamber includes: A carrier body configured for holding the substrate; an electric device; and a heat protection arrangement at least partially surrounding the electric device for protecting the electric device from heat.
  • an apparatus for processing a substrate includes: A vacuum processing chamber adapted for processing the substrate; a transport system adapted for transporting a carrier for supporting the substrate, particularly a carrier according to any embodiments described herein; a processing device for processing the substrate, particularly a deposition source for depositing material forming a layer on the substrate; and a cooling arrangement arranged in the vacuum processing chamber, such that a heat flux from a heat protection arrangement of the carrier to the cooling arrangement can be provided, and wherein a surface of the cooling arrangement facing towards the heat protection arrangement of the carrier has an emissivity coefficient ⁇ of ⁇ > 0.7.
  • a method for cooling an electric device of a carrier for supporting a substrate in a vacuum processing chamber includes: Providing a cooling arrangement in the vacuum processing chamber; providing the carrier with a heat protection arrangement at least partially surrounding the electric device for protecting the electric device from heat; and cooling the heat protection arrangement by providing a heat flux from a surface of the heat protection arrangement having an emissivity coefficient ⁇ of ⁇ > 0.7 to a surface of the cooling arrangement having an emissivity coefficient ⁇ of ⁇ > 0.7.
  • FIG. 1 is a schematic front view of carrier for supporting a substrate according to embodiments described herein;
  • FIG. 2 is a schematic cross-sectional side view of the carrier of FIG. 1;
  • FIG. 3 A is a schematic front view of a heat protection arrangement of a carrier according to embodiments described herein;
  • FIG. 3B is a more detailed schematic front view of a heat protection arrangement of a carrier according to embodiments described herein;
  • FIG. 4 is a schematic front view of carrier for supporting a substrate according to further embodiments described herein
  • FIG. 5 is a schematic top view of an apparatus for processing a substrate according to embodiments described herein;
  • FIG. 6 is a schematic cross-sectional view of an apparatus for processing a substrate according to embodiments described herein;
  • FIG. 7 is a flow diagram illustrating a method for cooling an electric device of a carrier according to embodiments described herein.
  • a carrier for supporting a substrate is to be understood as a carrier which is configured for holding a substrate as described herein, particularly a large area substrate as described herein.
  • the substrate supported by a carrier as described herein includes a front surface and a back surface, wherein the front surface is a surface of the substrate being processed, for example on which a material layer is to be deposited.
  • substrate as used herein shall particularly embrace inflexible substrates, e.g., glass plates and metal plates.
  • the substrate can also embrace flexible substrates such as a web or a foil.
  • the substrate can be made from any material suitable for material deposition.
  • the substrate can be made from a material selected from the group consisting of glass (for instance soda-lime glass, borosilicate glass etc.), metal, polymer, ceramic, compound materials, carbon fiber materials, mica or any other material or combination of materials which can be coated by a deposition process.
  • the substrate can have a thickness of 0.1 mm to 1.8 mm, such as 0.7 mm, 0.5 mm or 0.3 mm. In some implementations, the thickness of the substrate may be 5 ⁇ or more and/or 700 ⁇ or less. Handling of thin substrates with a thickness of only a few microns, e.g. 8 ⁇ or more and 50 ⁇ or less, may be challenging.
  • a "large area substrate” may be used for display manufacturing and may be a glass or plastic substrate.
  • substrates as described herein shall embrace substrates which are typically used for an LCD (Liquid Crystal Display), a PDP (Plasma Display Panel), and the like.
  • a large area substrate can have a main surface with an area of 0.5 m 2 or larger, particularly of 1 m 2 or larger.
  • a large area substrate can be GEN 4.5, which corresponds to about 0.67 m 2 substrates (0.73x0.92m), GEN 5, which corresponds to about 1.4 m 2 substrates (1.1 m x 1.3 m), GEN 7.5, which corresponds to about 4.29 m 2 substrates (1.95 m x 2.2 m), GEN 8.5, which corresponds to about 5.7m 2 substrates (2.2 m x 2.5 m), or even GEN 10, which corresponds to about 8.7 m 2 substrates (2.85 m x 3.05 m). Even larger generations such as GEN 11 and GEN 12 and corresponding substrate areas can similarly be implemented.
  • an array of smaller sized substrates with surface areas down to a few cm 2 , e.g. 2 cm x 4 cm and/or various individual shapes may be positioned on a larger substrate carrier
  • one or more thin film batteries can be formed on a large area substrate supported by the carrier according to the embodiments described herein.
  • the carriers are configured for supporting two or more substrates.
  • an array of substrates positioned on an inlay portion or sub-carriers (e.g., DIN A5, A4, or A3) on large carriers (e.g. with a deposition window of Gen 4.5) can be used.
  • a "carrier body configured for holding the substrate” is to be understood as a carrier body including a frame or a plate which is configured for holding a substrate as described herein. Accordingly, the carrier body as described herein can be configured to support a surface of the substrate, such as the back surface of the substrate. According to some embodiments, the carrier body may be a frame having one or more frame elements. As an example, the carrier body can be a rectangular- shaped frame, as exemplarily shown in FIG. 1. As another example, the carrier body may be configured having multiple sub-frames for supporting substrates, wherein the sub-frames are encompassed within a base frame. Accordingly, it is to be understood that various substrates can be held or supported by a carrier, particularly a carrier body as described herein.
  • the carrier body 110 can have an aperture opening 115, as exemplarily shown in FIG. 1.
  • the aperture opening 115 can be defined by the one or more frame elements of the carrier body 110.
  • the aperture opening 115 is configured to accommodate a substrate 200, as exemplarily shown in FIG. 1.
  • the frame- shaped carrier body can support a surface of the substrate, e.g., along the periphery of the substrate.
  • the aperture opening can have a variable size.
  • the substrate can be positioned within the aperture opening and the size of the aperture opening can be decreased to hold or clamp the substrate at the substrate edges. When the substrate is to be unloaded from the carrier, the size of the aperture opening can be increased to release the substrate edges.
  • the aperture opening of the carrier body may be configured to accommodate an inlay portion.
  • the inlay portion can be configured to support two or more substrates.
  • the inlay portion can be configured to support five or more substrates, particularly ten or more substrates, and more particularly or more substrates.
  • the inlay portion can be a plate.
  • the inlay portion can be configured to be detachable from the carrier body.
  • the inlay portion can be configured to be attached to, and detached from, the aperture opening.
  • the inlay portion can have a size corresponding to the size of the aperture opening.
  • the inlay portion can be held or fixed in the aperture opening.
  • the carrier can include one or more holding devices (not shown) configured for holding the substrate at the carrier, particularly at the plate or frame.
  • the one or more holding devices can include at least one of mechanical, electrostatic, electrodynamic (van der Waals), and electromagnetic devices.
  • the one or more holding devices can be mechanical and/or magnetic clamps distributed around the perimeter of the frame.
  • the carrier includes, or is, an electrostatic chuck (E- chuck), as described in more detail with reference to FIG 4.
  • the E-chuck can have a supporting surface for supporting the substrate thereon.
  • the E-chuck includes a dielectric body having electrodes embedded therein.
  • the dielectric body can be fabricated from a dielectric material, preferably a high thermal conductivity dielectric material such as pyrolytic boron nitride, aluminum nitride, silicon nitride, alumina or an equivalent material.
  • the electrodes may be coupled to a power source, which provides power to the electrodes to control a chucking force.
  • the chucking force is an electrostatic force acting on the substrate to fix the substrate on the supporting surface.
  • the carrier includes, or is, an electrodynamic chuck or Gecko chuck (G-chuck).
  • the G-chuck can have a supporting surface for supporting the substrate thereon.
  • the chucking force is an electrodynamic force acting on the substrate to fix the substrate on the supporting surface.
  • the term “vertical”, “vertical direction” or “vertical orientation” are to be understood to distinguish over “horizontal”, “horizontal direction” or “horizontal orientation”. That is, “vertical”, “vertical direction” or “vertical orientation” relates to a substantially vertical orientation e.g. of the carrier and the substrate, wherein a deviation of a few degrees, e.g. up to 10° or even up to 15°, from an exact vertical direction or vertical orientation is still considered as a “substantially vertical direction” or a “substantially vertical orientation”.
  • the vertical direction can be substantially parallel to the force of gravity.
  • the carrier 100 may further include a first guiding device 111, schematically illustrated as a top bar, and a second guiding device 112, schematically illustrated as a bottom bar.
  • a "guiding device” may be understood as a device configured for guiding a carrier as described herein along a transportation path of a processing apparatus, e.g. an inline processing apparatus.
  • the transportation path can be a linear transportation path along which one or more deposition sources may be arranged along the linear transportation path, as explained in more detail with respect to FIG. 5 herein.
  • a carrier according to embodiments described herein can be configured for transportation along a transportation path or transportation track extending in a substrate transport direction through an in-line processing apparatus.
  • embodiments of the carrier as described herein can be utilized for processing large area substrates, e.g. by sputter deposition or other coating techniques.
  • embodiments described herein can be used for a great variety of applications, for instance in the manufacture of thin film batteries, electrochromic windows and displays, for example, liquid crystal displays (LCD), PDPs (Plasma Display Panel), organic light-emitting diode (OLED) displays, and the like.
  • LCD liquid crystal displays
  • PDPs Plasma Display Panel
  • OLED organic light-emitting diode
  • FIG. 1 illustrates a carrier 100 for supporting a substrate 200 in a vacuum processing chamber according to embodiments described herein.
  • FIG. 2 shows a cross-sectional side view along line A-A of the carrier 100 of FIG. 1.
  • a carrier 100 for supporting a substrate 200 in a vacuum processing chamber is provided, as exemplarily shown in FIG. 1.
  • the carrier includes a carrier body 110 configured for holding the substrate 200; an electric device 120; and a heat protection arrangement 130 at least partially surrounding the electric device 120 for protecting the electric device from heat.
  • a carrier with an on-board electric device is provided with which the risk that the electric device may become defect, particularly in long-term processes under hot conditions, can be minimized or even eliminated.
  • the electric device can be beneficially protected from heat, such that the functionality of the electric device and thus the functionality of the carrier can be maintained for a prolonged time.
  • the functionality of the carrier can be maintained for more than 100 h processing hours.
  • the carrier is exposed, e.g. in a vacuum processing chamber, to a heating device having a temperature of 550°C, typically the carrier has a temperature of about 480°C.
  • the electric device may be maintained at a temperature of below 80°C, particularly at a temperature of below 70°, more particularly at a temperature of below 60°, such as approximately 56°C.
  • a "heat protection arrangement” can be understood as an arrangement which is configured for providing a heat flux from the heat protection arrangement to a cooling arrangement.
  • a heat protection arrangement as described herein may be understood as an arrangement which surrounds an area to be protected from heat, wherein at least a part of the heat protection arrangement is configured for reflecting heat such that the area to be protected can be shielded from the heat.
  • an "electric device” is to be understood as a device having electric or electronic components.
  • the electric device as described herein may include at least one component selected from the group consisting of: A power source (e.g. a battery); a controller, a computing unit (e.g. a microprocessor), switches, etc.
  • a surface of the heat protection arrangement 130 facing away from the electric device 120 has an emissivity coefficient ⁇ of ⁇ > 0.7.
  • the surface of the heat protection arrangement facing away from the electric device may have an emissivity coefficient ⁇ of ⁇ > 0.8, more particularly an emissivity coefficient ⁇ of ⁇ > 0.9; even more particularly an emissivity coefficient ⁇ of ⁇ > 0.95.
  • the surface of the heat protection arrangement facing away from the electric device may include a surface coating for providing the emissivity coefficient ⁇ of ⁇ > 0.7, particularly ⁇ > 0.8, particularly ⁇ > 0.9, more particularly ⁇ > 0.95.
  • a surface of the heat protection arrangement facing away from the electric device may be coated with a layer of paint, particularly a dark paint, such as a paint being black or blue in color.
  • a surface of the heat protection arrangement 130 facing towards the electric device 120 has an emissivity coefficient ⁇ of ⁇ ⁇ 0.3.
  • the surface of the heat protection arrangement facing towards the electric device may have an emissivity coefficient ⁇ of ⁇ ⁇ 0.2, more particularly an emissivity coefficient ⁇ of ⁇ ⁇ 0.1; even more particularly an emissivity coefficient ⁇ of ⁇ ⁇ 0.05.
  • the surface of the heat protection arrangement facing towards the electric device may be a polished metallic surface for providing the emissivity coefficient of ⁇ ⁇ 0.3, particularly ⁇ ⁇ 0.2, particularly ⁇ ⁇ 0.1, more particularly ⁇ ⁇ 0.05.
  • the surface of the heat protection arrangement facing towards the electric device may be a polished copper surface.
  • the heat protection arrangement may include a box made from a metallic material, e.g. copper, in the interior of which the electric device is arranged.
  • the outer surface of the box i.e.
  • the surface of the heat protection arrangement facing away from the electric device may include a surface coating for providing the emissivity coefficient ⁇ of ⁇ > 0.7, particularly ⁇ > 0.8, particularly ⁇ > 0.9, more particularly ⁇ > 0.95.
  • the outer surface of the box may be coated with a layer of paint, particularly a dark paint, such as a paint being black or blue in color.
  • the inner surface of the box, i.e. the surface of the heat protection arrangement facing towards the electric device provided inside the box may be a metallic surface (e.g. a copper surface), particularly a polished metallic surface (e.g.
  • a low-cost heat protection arrangement for a carrier with an electrical device is provided which is configured for dissipating thermal energy by thermal radiation.
  • a metallic box particularly a box made of copper, may be beneficial for providing a fast and uniform heat flux away from the electric device surrounded by the heat protection arrangement as described herein.
  • the emissivity coefficient ⁇ depends on the material and may vary with the temperature T and with the wavelength of the radiation emitted.
  • the heat protection arrangement 130 may include a gap 150 of at least 3 mm with respect to the carrier body 1 10.
  • the gap can be provided between the box 133 and the carrier body 1 10.
  • the gap size may be defined by a distance D from a side surface of the box 133 to the carrier body 1 10, as exemplarily indicated in FIG. 3 A.
  • the gap size Di may be selected from a range between a lower limit of D 1 > 0.2mm, particularly a lower limit of Di > 5 mm, more particularly a lower limit of Di > 7 mm, and an upper limit of Di ⁇ 30 mm, particularly an upper limit of Di ⁇ 20 mm, more particularly an upper limit of Di ⁇ 15 mm.
  • the gap 150 may be provided substantially parallel to the lower edge of the carrier body, particularly parallel to the second guiding device 1 12, as exemplarily shown in FIG. 3 A.
  • the gap may be provided as a turned around U-shaped gap, particularly an upside-down U-shaped gap, such that three sides of the box 133 in which the electric device is arranged are surrounded by the U-shaped gap.
  • the effectiveness of the heat protection arrangement is increased.
  • a heat flux from the carrier body to the box in which the electric device is arranged can be reduced by providing the heat protection arrangement with a gap as described herein, because the gap provides for a bad heat conduction.
  • the carrier body 1 10 includes at least one slit 160 at a portion of the carrier body 1 10 at which the heat protection arrangement 130 is provided, as exemplarily shown in FIG. 3 A.
  • the term "slit” as used herein can be understood as a free space providing a local separation within the carrier body.
  • the at least one slit 160 can be provided in proximity to the gap 150.
  • the slit may be provided from the gap at a distance 165 selected from a range between a lower limit of 3 mm, particularly a lower limit of 5 mm, more particularly a lower limit of 10 mm, and an upper limit of 50 mm, particularly an upper limit of 35 mm, more particularly an upper limit of 20 mm.
  • the slit may be provided substantially parallel to the lower edge of the carrier body, particularly parallel to the second guiding device 1 12, as exemplarily shown in FIG. 3 A.
  • the slit may be provided as turned around U-shaped slit, in a similar manner as the turned around U-shaped gap, as exemplarily shown in FIG. 3A.
  • the slit size S may be selected from a range between a lower limit of S > 0.5 mm, particularly a lower limit of S > 1 mm, more particularly a lower limit of S > 2 mm, and an upper limit of S ⁇ 10 mm, particularly an upper limit of S ⁇ 5 mm, more particularly an upper limit of S ⁇ 3 mm.
  • the slit may be configured to have longitudinal extension substantially parallel to the bottom edge of the carrier body.
  • substantially parallel relates to a substantially parallel orientation, e.g., of the slit, wherein a deviation of a few degrees, e.g. up to 10° or even up to 15°, from an exact parallel orientation is still considered as “substantially parallel”.
  • the heat protection arrangement with a slit as described herein the benefit of the effectiveness of protecting the electric device from heat is increased.
  • a heat flux from the carrier body to the box in which the electric device is arranged can be reduced, since the slit is configured for providing a bad heat conduction.
  • the heat protection arrangement 130 may include a reflector sheet arrangement 131 having at least one sheet element 132 with a surface having an emissivity coefficient ⁇ of ⁇ ⁇ 0.3 for reflecting heat from the carrier body.
  • the reflector sheet arrangement may include a stack of sheet elements, particularly a stack of two or more sheet elements, particularly a stack of three or more sheet elements, more particularly four or more sheet elements.
  • the stack of sheet elements may be connected to each other by connecting elements 143 having a diameter of below 4 mm.
  • the connecting elements 143 may be M2 screws.
  • the connecting elements 143 may also be employed for connecting the stack of sheet elements to the box 133.
  • the reflector sheet arrangement 131 may include three or more stacks of sheet elements.
  • a first stack of sheet elements and a second stack of sheet elements may be provided in a substantially vertical orientation at two opposing sides of the box 133 and a third stack of sheet elements may be provided in a substantially vertical orientation at a top side of the box, as exemplarily shown in FIGS 3A and 3B.
  • the reflector sheet arrangement may be arranged within the gap 150.
  • the dimension of the sheet 1 elements may be adapted to the dimension of the side surfaces of the box.
  • the at least one sheet element 132 of the reflector sheet arrangement 131 can be made of a metallic material, particularly stainless steel.
  • the at least one sheet element includes at least one surface, particularly the surface of the at least one sheet element facing towards the carrier body, having emissivity coefficient ⁇ of ⁇ ⁇ 0.3, particularly ⁇ ⁇ 0.2, particularly ⁇ ⁇ 0.1, more particularly ⁇ ⁇ 0.05.
  • a stack of sheet elements as described herein include sheet elements having an emissivity coefficient ⁇ of ⁇ ⁇ 0.3, particularly ⁇ ⁇ 0.2, particularly ⁇ ⁇ 0.1, more particularly ⁇ ⁇ 0.05.
  • the carrier may further include a mounting arrangement 140 for mounting the heat protection arrangement 130 to the carrier body 110.
  • the mounting arrangement 140 can include a pin fixation 141 for fixing the heat protection arrangement 130 to the carrier body 110.
  • the pin fixation 141 can be provided such that the bottom of the box 133 is supported, as exemplarily shown in FIG. 3B.
  • FIG. 3B Beneficially, by providing a pin fixation, little heat conduction from the carrier body and or the second guiding device 112 is provided.
  • the mounting arrangement 140 can include a spring holding device 142 for holding the heat protection arrangement 130 in a vertical state.
  • a spring holding device 142 for holding the heat protection arrangement 130 in a vertical state.
  • two spring holding devices may be provided which are connected to the carrier body and are configured to hold the box 133 in a vertical state.
  • a spring holding device as described herein may be a DuraTherm spring being thermally stable up to 600°C. Accordingly, by holding the box with a spring holding device as described herein, a holding of the box with little heat conduction is provided.
  • the contact between the heat protection arrangement, particularly the box in which the electric device is arranged, and the carrier body can be beneficially decreased to a minimum such that the thermal conductivity between the heat protection arrangement and the carrier body can be minimized.
  • the carrier may be provided with sensors 170, e.g. thermocouples, which are connected to the electric device which is at least partially surrounded by the heat protection arrangement as described herein.
  • sensors 170 e.g. thermocouples
  • the reflector sheet arrangement and or the wall of the box may be provided with a feed through for connecting the electrical device with the sensors.
  • the carrier 100 may include an electrostatic or a magnetic chuck assembly 30, also referred to as an "e-chuck assembly", as exemplarily shown in FIG. 4.
  • the electrostatic or magnetic chuck assembly 30 may include a plurality of chuck zones 32, which may be provided spaced-apart from each other such that each chuck zone is configured to fix a part of the substrate to an associated part of the support surface.
  • the plurality of chuck zones 32 are provided laterally spaced-apart from each other at a body of the substrate carrier.
  • the chuck zones may be distributed in a main extension plane of the substrate carrier in a predetermined pattern.
  • the chuck zones may be arranged next to each other in a linear arrangement, e.g. in a horizontal row or in a vertical column.
  • the chuck zones may be arranged in a two-dimensional array, e.g. in a plurality of rows and columns.
  • Other 2D-patterns or combinations thereof are possible, e.g. concentrically arranged chuck zones or interwoven chuck zones such as interwoven meander structures.
  • the chuck zones as exemplarily shown in FIG.4, are arranged in a two-dimensional array with two rows and two columns.
  • chuck zone may be used synonymously herein, and may denote a part of the chuck assembly that is configured to generate an electrostatic or magnetic grip force at a part of the support surface. Each chuck zone may contribute to the overall grip force of the chuck assembly.
  • each chuck zone may cover a part of the area of a support surface 118 and may be configured to generate a predetermined electrostatic or magnetic grip force, which may be adjustable.
  • the grip force generated by each chuck segment may be proportional to the part of the area of the support surface which is covered by the chuck segment.
  • each chuck zone of the plurality of chuck zones covers essentially the same part of the area of the support surface such that the overall grip force generated by the chuck assembly may be a multiple of the grip force generated by a single chuck zone.
  • each chuck zone of the plurality of chuck zones 32 includes an electrode arrangement, e.g.
  • an electrode arrangement including a first electrode and a second electrode, wherein a first voltage may be applied to the first electrode and a second voltage may be applied to the second electrode via a power assembly, e.g. a high voltage source.
  • the first electrode may be interleaved with the second electrode in some embodiments, in order to increase the grip force provided by the chuck zone.
  • the substrate carrier includes a dielectric body, wherein the electrode arrangements of the electrostatic chuck assembly are embedded in the dielectric body.
  • the dielectric body can be fabricated from a dielectric material, e.g. a high thermal conductivity dielectric material such as pyrolytic boron nitride, aluminum nitride, silicon nitride, alumina or an equivalent material, e.g. a thermally resistant polymer based material such as a polyimide based material or other organic materials.
  • the electrodes of the electrode arrangements may be coupled to a power assembly, e.g.
  • a voltage source respectively, which may provide a predetermined voltage to the electrode arrangements to generate a predetermined grip force.
  • the grip force may be an electrostatic force acting on the substrate to fix the substrate on the support surface of the substrate carrier.
  • the power assembly may at least partially be surrounded by a heat protection arrangement according to embodiments described herein.
  • the chuck zones may be independently controllable.
  • the chuck zones can be independently powered and de-powered, and/or the grip force to be generated by each of the chuck zones may be independently set.
  • the chuck zones may be connected to the electric device 120 provided inside the heat protection arrangement 130 via conductive lines 135, e.g. for providing power to the chuck zones.
  • embodiments of the carrier as described herein can be used for various processing methods.
  • the carrier as described herein can be utilized for PVD deposition processes, CVD deposition processes, substrate structuring edging, heating (e.g. annealing) or any kind of substrate processing.
  • embodiments of the carrier as described herein provide for improving high temperature failure resistance with respect to detecting a critical temperature by an electric measurement arrangement or with respect to the holding capability of an E-Chuck.
  • the apparatus includes a vacuum processing chamber 310 adapted for processing the substrate 200.
  • vacuum processing chamber 310 may be adapted for a deposition process, such as a PVD or CVD process.
  • the vacuum processing chamber 310 may include a vacuum flange which can be connected to a vacuum pump to establish a vacuum within the vacuum processing chamber.
  • the apparatus 300 includes a transport system 320 adapted for transporting a carrier 100 for supporting the substrate, particularly a carrier according any of the embodiments described herein; along a substrate transport direction 321, as exemplarily indicated by the arrows in FIG. 5.
  • the transport system 320 can be configured for vertically transporting a carrier as described herein.
  • the transportation system may include transportation elements, e.g. rollers, and/or guiding elements for guiding the substrate or the carrier along the transportation path.
  • the transportation system may include a magnetic levitation system configured for contactlessly guiding a carrier as described herein.
  • the apparatus 300 includes a processing device 330 for processing the substrate 200, particularly a deposition source for depositing material forming a layer on the substrate, as exemplarily shown in FIG. 5.
  • the processing device 330 faces the side of the substrate to be coated.
  • the deposition material source may provide a deposition material to be deposited on the substrate 200.
  • the processing device 330 may include one or more sputter deposition sources, such as a first sputter deposition source 330a and a second sputter deposition source 330b, as exemplarily shown in FIG. 5.
  • the first sputter deposition source 330a and the second sputter deposition source 330b can be, for example, rotatable cathodes having targets of the material to be deposited on the substrate(s).
  • the first sputter deposition source 330a and the second sputter deposition source 330b are connected to a power supply 333.
  • embodiments of the apparatus as described herein include a cooling arrangement 340 arranged in the vacuum processing chamber, such that a heat flux from a heat protection arrangement of the carrier to the cooling arrangement can be provided.
  • a surface of the cooling arrangement facing towards the heat protection arrangement of the carrier has an emissivity coefficient ⁇ of ⁇ > 0.7.
  • an effective cooling of the electric device at least partially surrounded by the heat protection arrangement can be provided.
  • an increased heat flux from a surface of the heat protection arrangement facing the surface of the cooling arrangement having an emissivity coefficient ⁇ of ⁇ > 0.7 is beneficially provided.
  • the surface of the cooling arrangement facing towards the heat protection arrangement of the carrier has an emissivity coefficient ⁇ of ⁇ > 0.8, more particularly an emissivity coefficient ⁇ of ⁇ > 0.9; even more particularly an emissivity coefficient ⁇ of ⁇ > 0.95.
  • the surface of the cooling arrangement facing towards the heat protection arrangement of the carrier may include a surface coating for providing the emissivity coefficient ⁇ of ⁇ > 0.7, particularly ⁇ > 0.8, particularly ⁇ > 0.9, more particularly ⁇ > 0.95.
  • the surface of the heat protection arrangement facing towards the heat protection arrangement of the carrier may be coated with a layer of paint, particularly a dark paint, such as a paint having a black or blue color.
  • a “cooling arrangement” can be understood as an arrangement which is actively cooled, for example by employing a cooling liquid such as water.
  • the cooling arrangement can include a meander cooling pipe through which cooling fluid can be pumped to provide the cooling.
  • a cooling arrangement as described herein may include two or more cooling elements as exemplarily described with reference to FIG. 6.
  • the cooling arrangement 340 is typically provided in a lower portion of the vacuum processing chamber 310 and at a height of the heat protection arrangement 130 of the carrier 100.
  • the cooling arrangement 340 may include a first cooling element 341 and a second cooling element 342 which are arranged on opposite sides of the carrier 100, particularly on opposite sides of the heat protection arrangement 130.
  • the distances D 2 and D 3 are selected to be equal.
  • the apparatus 300 may further include a heating device 350 for applying heat to the substrate.
  • the heating device 350 may be provided within the vacuum processing chamber and is configured for heating or pre -heating the substrate to a predetermined temperature.
  • the cooling arrangement may include a heat reflector sheet arrangement 343 having at least one reflector sheet element 344 with a surface having an emissivity coefficient ⁇ of ⁇ ⁇ 0.3 for shielding the cooling arrangement 340, particularly the first cooling element 341 of the cooling arrangement 340, from heat provided by the heating device 350, as exemplarily shown in FIG. 6.
  • the heat reflector sheet arrangement 343 may include a stack of reflector sheet elements, particularly a stack of two or more reflector sheet elements, particularly a stack of three or more reflector sheet elements, more particularly four or more reflector sheet elements.
  • the at least one reflector sheet element 344 of the heat reflector sheet arrangement 343 can be made of a metallic material, particularly stainless steel.
  • the at least one sheet element includes at least one surface, particularly the surface of the at least one sheet element facing towards the heating device, having an emissivity coefficient ⁇ of ⁇ ⁇ 0.3, particularly ⁇ ⁇ 0.2, particularly ⁇ ⁇ 0.1, more particularly ⁇ ⁇ 0.05.
  • a stack of reflector sheet elements as described herein include reflector sheet elements having an emissivity coefficient ⁇ of ⁇ ⁇ 0.3, particularly ⁇ ⁇ 0.2, particularly ⁇ ⁇ 0.1, more particularly ⁇ ⁇ 0.05.
  • the cooling arrangement for instance the first cooling element of the cooling arrangement, can effectively be shielded from heat of the heating device.
  • the cooling arrangement 340 may be configured to have a longitudinal extension in a substrate transport direction 321 which corresponds to at least the extension of the carrier in the substrate transport direction.
  • the longitudinal extension in the substrate transport direction 321 of the first cooling element 341 and/or the second cooling element 342 can be more than 100% of the extension of the carrier in the substrate transport direction.
  • the longitudinal extension in the substrate transport direction 321 of the first cooling element 341 and/or the second cooling element 342 can be such that a cooling of the electric device of the carrier over the complete transportation distance within the vacuum processing chamber can be provided.
  • the heat protection arrangement of the carrier passes the cooling arrangement along the complete transportation path such that a cooling of the heat protection arrangement can be ensured over the complete transportation distance within the vacuum processing chamber, or even over the complete length of the apparatus.
  • further chambers can be provided adjacent to the vacuum processing chamber 310.
  • the vacuum processing chamber 310 can be separated from adjacent chambers by a valve having a valve housing 304 and a valve unit 306. After the carrier 100 with the at least one substrate thereon is inserted into the vacuum processing chamber 310 in the substrate transport direction 321, the valve unit 306 can be closed.
  • the atmosphere in the vacuum processing chamber can be controlled by generating a technical vacuum, for example with vacuum pumps connected to the vacuum chamber, and/or by inserting process gases in a deposition region in the vacuum chamber.
  • process gases can include inert gases such as argon and/or reactive gases such as oxygen, nitrogen, hydrogen and ammonia (NH3), Ozone (03), activated gases or the like.
  • the deposition material source may be a target with deposition material thereon or any other arrangement allowing material to be released for deposition on a substrate.
  • the deposition material source may be a rotatable target.
  • the deposition material source may be movable in order to position and/or replace the source.
  • the deposition material source may be a planar target.
  • the deposition material may be selected according to the deposition process and the later application of the coated substrate.
  • the deposition material of the source may be at least one material selected from the group consisting of: A metal, such as aluminum, molybdenum, titanium, copper, lithium, tantalum, niobium, manganese, nickel, cobalt, indium, gallium, zinc, tin, silver, or the like, silicon, indium tin oxide, and other transparent conductive oxides.
  • a metal such as aluminum, molybdenum, titanium, copper, lithium, tantalum, niobium, manganese, nickel, cobalt, indium, gallium, zinc, tin, silver, or the like, silicon, indium tin oxide, and other transparent conductive oxides.
  • layers of oxide, nitride or carbide, which can include such materials can be deposited by providing the material from the source or by reactive deposition, i.e.
  • thin film transistor materials like siliconoxides, siliconoxynitrides, siliconnitrides, aluminumoxide, aluminum-oxynitrides may be used as a deposition material.
  • the apparatus can be configured to deposit lithium phosphorus oxynitride (LiPON) on the at least one substrate.
  • LiPON is an amorphous glassy material used as an electrolyte material in thin film batteries. Layers of LiPON can be deposited over a cathode material of a thin film battery by RF (radio frequency) magnetron sputtering forming a solid electrolyte.
  • the carriers and the apparatuses utilizing the carriers described herein can be used for vertical substrate processing.
  • the carrier of the present disclosure is configured for holding the at least one substrate in a substantially vertical orientation.
  • the term "vertical substrate processing" is understood to distinguish over "horizontal substrate processing".
  • vertical substrate processing relates to a substantially vertical orientation of the carrier and the substrate during substrate processing, wherein a deviation of a few degrees, e.g. up to 10° or even up to 15°, from an exact vertical orientation is still considered as vertical substrate processing.
  • the vertical direction can be substantially parallel to the force of gravity.
  • the apparatus for sputter deposition on at least one substrate can be configured for sputter deposition on a vertically oriented substrate.
  • embodiments of the carrier having a heat protection arrangement as described herein may mutatis mutandis be adapted to be used in apparatuses for horizontal substrate processing. Accordingly, it is to be understood that apparatuses for horizontal substrate processing may mutatis mutandis be adapted to include a cooling arrangement according to embodiments described herein which is horizontally arranged.
  • a method 400 for cooling an electric device of a carrier for supporting a substrate in a vacuum processing chamber is provided, as exemplarily illustrated by the flow chart shown in FIG 7.
  • the method includes providing a cooling arrangement in the vacuum processing chamber (block 410); providing the carrier with a heat protection arrangement (block 420) at least partially surrounding the electric device for protecting the electric device from heat; and cooling the heat protection arrangement (block 430) by providing a heat flux from a surface of the heat protection arrangement having an emissivity coefficient ⁇ of ⁇ > 0.7 to a surface of the cooling arrangement having an emissivity coefficient ⁇ of ⁇ > 0.7.
  • providing a cooling arrangement in the vacuum processing chamber may include providing a cooling arrangement according to embodiments described herein.
  • providing the carrier with a heat protection arrangement may include providing a carrier as described herein with a heat protection arrangement according to embodiments described herein.

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

L'invention concerne un support (100) pour supporter un substrat (200) dans une chambre de traitement sous vide. Le support comprend : un corps de support (110) configuré pour maintenir le substrat (200); un dispositif électrique (120); et un agencement de protection thermique (130) entourant au moins partiellement le dispositif électrique (120) pour protéger le dispositif électrique contre la chaleur. En outre l'invention concerne un appareil (300) pour traiter un substrat (200). L'appareil comprend : une chambre de traitement sous vide (310) conçue pour traiter le substrat (200); un système de transport (320) conçu pour transporter un support (100) pour supporter le substrat, un dispositif de traitement (330) pour traiter le substrat (200), et un agencement de refroidissement (340) agencé dans la chambre de traitement sous vide, de telle sorte qu'un flux de chaleur provenant d'un agencement de protection thermique du support vers l'agencement de refroidissement puisse être fourni.
PCT/EP2016/072577 2016-09-22 2016-09-22 Support pour supporter un substrat, appareil pour traiter un substrat et procédé associé WO2018054471A1 (fr)

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PCT/EP2016/072577 WO2018054471A1 (fr) 2016-09-22 2016-09-22 Support pour supporter un substrat, appareil pour traiter un substrat et procédé associé

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PCT/EP2016/072577 WO2018054471A1 (fr) 2016-09-22 2016-09-22 Support pour supporter un substrat, appareil pour traiter un substrat et procédé associé

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
RU222969U1 (ru) * 2023-05-23 2024-01-25 Виктор Игоревич Иванов Подложкодержатель для плазмохимических и электростатических процессов

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Publication number Priority date Publication date Assignee Title
JP2002064133A (ja) * 2000-03-30 2002-02-28 Ibiden Co Ltd 支持容器および半導体製造・検査装置
US20040149719A1 (en) * 2002-12-20 2004-08-05 Kyocera Corporation Wafer heating apparatus
US20060174720A1 (en) * 2002-01-24 2006-08-10 Sensarray Corporation Process condition sensing wafer and data analysis system
US20070166134A1 (en) * 2005-12-20 2007-07-19 Motoko Suzuki Substrate transfer method, substrate transfer apparatus and exposure apparatus
DE102010054483A1 (de) * 2010-12-14 2012-06-14 Manz Automation Ag Mobile, transportable elektrostatische Substrathalteanordnung
WO2012154359A1 (fr) * 2011-05-10 2012-11-15 Kla-Tencor Corporation Module écran thermique pour dispositif de métrologie de type à substrat
TW201546949A (zh) * 2014-06-13 2015-12-16 Calitech Co Ltd 移動式靜電吸盤及其製造方法
WO2016061089A1 (fr) * 2014-10-14 2016-04-21 Kla-Tencor Corporation Procédé et système pour mesurer l'exposition au rayonnement et à la température de tranches le long d'une chaîne de fabrication

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002064133A (ja) * 2000-03-30 2002-02-28 Ibiden Co Ltd 支持容器および半導体製造・検査装置
US20060174720A1 (en) * 2002-01-24 2006-08-10 Sensarray Corporation Process condition sensing wafer and data analysis system
US20040149719A1 (en) * 2002-12-20 2004-08-05 Kyocera Corporation Wafer heating apparatus
US20070166134A1 (en) * 2005-12-20 2007-07-19 Motoko Suzuki Substrate transfer method, substrate transfer apparatus and exposure apparatus
DE102010054483A1 (de) * 2010-12-14 2012-06-14 Manz Automation Ag Mobile, transportable elektrostatische Substrathalteanordnung
WO2012154359A1 (fr) * 2011-05-10 2012-11-15 Kla-Tencor Corporation Module écran thermique pour dispositif de métrologie de type à substrat
TW201546949A (zh) * 2014-06-13 2015-12-16 Calitech Co Ltd 移動式靜電吸盤及其製造方法
WO2016061089A1 (fr) * 2014-10-14 2016-04-21 Kla-Tencor Corporation Procédé et système pour mesurer l'exposition au rayonnement et à la température de tranches le long d'une chaîne de fabrication

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
RU222969U1 (ru) * 2023-05-23 2024-01-25 Виктор Игоревич Иванов Подложкодержатель для плазмохимических и электростатических процессов

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