WO2017050350A1 - Support de substrat, ainsi qu'appareil de dépôt par pulvérisation cathodique et procédé utilisant celui-ci - Google Patents

Support de substrat, ainsi qu'appareil de dépôt par pulvérisation cathodique et procédé utilisant celui-ci Download PDF

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Publication number
WO2017050350A1
WO2017050350A1 PCT/EP2015/071609 EP2015071609W WO2017050350A1 WO 2017050350 A1 WO2017050350 A1 WO 2017050350A1 EP 2015071609 W EP2015071609 W EP 2015071609W WO 2017050350 A1 WO2017050350 A1 WO 2017050350A1
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WO
WIPO (PCT)
Prior art keywords
carrier
sputter deposition
substrate
electrically insulated
guiding device
Prior art date
Application number
PCT/EP2015/071609
Other languages
English (en)
Inventor
Andre Brüning
Stefan Keller
Reiner Hinterschuster
Thomas Werner ZILBAUER
Original Assignee
Applied Materials, Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials, Inc. filed Critical Applied Materials, Inc.
Priority to CN201580083279.7A priority Critical patent/CN108138314A/zh
Priority to PCT/EP2015/071609 priority patent/WO2017050350A1/fr
Publication of WO2017050350A1 publication Critical patent/WO2017050350A1/fr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50—Substrate holders
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/562—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks for coating elongated substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32733—Means for moving the material to be treated
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32733—Means for moving the material to be treated
    • H01J37/32752—Means for moving the material to be treated for moving the material across the discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67703—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
    • H01L21/67706—Mechanical details, e.g. roller, belt
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67703—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
    • H01L21/67709—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations using magnetic elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67703—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
    • H01L21/67712—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations the substrate being handled substantially vertically
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/6776—Continuous loading and unloading into and out of a processing chamber, e.g. transporting belts within processing chambers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating or a hardness or a material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68771—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by supporting more than one semiconductor substrate

Definitions

  • Embodiments described herein relate to a carrier for supporting at least one substrate during a sputter deposition process, an apparatus for sputter deposition on at least one substrate, and a method for sputter deposition on at least one substrate.
  • Embodiments described herein particularly relate to an electrically insulated carrier for supporting at least one substrate during an AC sputter deposition process.
  • Techniques for layer deposition on a substrate include, for example, thermal evaporation, chemical vapor deposition (CVD) and sputtering deposition.
  • a sputter deposition process can be used to deposit a material layer on the substrate, such as a layer of an insulating material.
  • a target having a target material to be deposited on the substrate is bombarded with ions generated in a plasma region to dislodge atoms of the target material from a surface of the target. The dislodged atoms can form the material layer on the substrate.
  • the dislodged atoms can react with a gas in the plasma region, for example, nitrogen or oxygen, to form an oxide, a nitride or an oxinitride of the target material on the substrate.
  • a gas in the plasma region for example, nitrogen or oxygen
  • radio frequency (RF) sputtering processes are used for the production of coated substrates in a growing number of applications, such as cell phones, notebooks and implantable medical devices.
  • carriers are used for supporting a substrate during a deposition process, such as a RF sputtering deposition process.
  • arcing can occur due to potential differences within a vacuum processing chamber. Arcing can damage, for example, the carrier and/or the substrate. Further, arcing can affect homogeneity and/or purity of the material layer deposited on the substrate.
  • the present disclosure particularly aims at providing a carrier, an apparatus and a method that can reduce or even avoid the occurrence of arcing in a vacuum processing chamber.
  • the present disclosure further aims at a carrier, an apparatus and a method that allow for an improved homogeneity and purity of the material layer deposited on the at least one substrate.
  • a carrier for supporting at least one substrate during a sputter deposition process includes a non-conductive carrier body having a first end and an opposing second end; an electrically insulated first guiding device provided at the first end of the ceramic carrier body; and an electrically insulated second guiding device provided at the second end of the ceramic carrier body.
  • an apparatus for sputter deposition on at least one substrate includes a vacuum chamber, one or more sputter deposition sources in the vacuum chamber, and a carrier according to embodiments described herein for supporting the at least one substrate during a sputter deposition process.
  • a method for sputter deposition on at least one substrate includes positioning the at least one substrate on a carrier according to embodiments described herein, and depositing a layer of a material on the at least one substrate using an AC sputter deposition process.
  • Embodiments are also directed at apparatuses for carrying out the disclosed methods and include apparatus parts for performing each described method aspect. These method aspects can be performed by way of hardware components, a computer programmed by appropriate software, by any combination of the two or in any other manner. Furthermore, embodiments according to the disclosure are also directed at methods for operating the described apparatus. The methods for operating the described apparatus include method aspects for carrying out every function of the apparatus.
  • FIG. 1 shows a front view of a carrier for supporting at least one substrate during a sputter deposition process according to embodiments described herein;
  • FIG. 2 shows a cross-sectional side view of the carrier of FIG. 1;
  • FIG. 3A shows a cross-sectional side view of an electrically insulated first guiding device provided at a first end of a carrier according to embodiments described herein;
  • FIG. 3B shows a cross-sectional side view of an electrically insulated first guiding device with a corresponding guiding arrangement provided at the first end of a carrier according to embodiments described herein;
  • FIG. 4A shows a cross-sectional side view of an electrically insulated second guiding device provided at a second end of a carrier according to embodiments described herein;
  • FIGS. 4B and 4C shows a cross-sectional side view of an electrically insulated second guiding device with a corresponding guiding arrangement provided at the second end of a carrier according to embodiments described herein;
  • FIG. 5A shows a front view of a carrier for supporting at least one substrate during a sputter deposition process according to yet further embodiments described herein;
  • FIG. 5B shows a cross-sectional side view of the carrier of FIG. 5A
  • FIG. 6A shows a front view of a carrier having two segments according to embodiments described herein;
  • FIG. 6B shows a front view of a carrier having two segments according to further embodiments described herein;
  • FIG. 7 shows a front view of a carrier having two segments according to yet further embodiments described herein;
  • FIG. 8 shows a schematic top view of an apparatus for sputter deposition utilizing a carrier according to embodiments described herein; and FIG. 9 shows a block diagram illustrating a method for sputter deposition according to embodiments described herein.
  • Carriers can be used for supporting a substrate during a sputter deposition process.
  • arcing due to potential differences within a vacuum processing chamber can occur. Arcing can damage, for example, the carrier and/or the substrate. Further, arcing can affect homogeneity and/or purity of the material layer deposited on the substrate.
  • the carrier includes a non-conductive carrier body.
  • the carrier body may be modular.
  • the carrier body may include two or more non-conductive segments.
  • embodiments of the carrier as described herein provide a reduced susceptibility to electrical potentials and the occurrence of arcing can be reduced or even avoided. Damage to the substrate due to arcing can be prevented. Further, arcing does not affect, or interfere with, the sputter deposition process, and the homogeneity of the material layer deposited on the substrate can be improved. A contamination of the material layer due to particles created by the arcing can be reduced or even avoided.
  • arcing refers to an electric flashover between two points having different electric potentials.
  • arcing can be understood as an electric current that flows across an open space between two points having different electrical potentials, i.e., there is a potential difference between the two points. When the potential difference exceeds a threshold value, arcing can occur.
  • the threshold value can be referred to as “flash-over voltage” or “sparkover” voltage.
  • the two points of different electrical potentials could be provided by the sputter deposition source (e.g., a target) and, for example, a portion of the carrier or another point provided within a vacuum processing chamber in which the carrier and the sputter deposition source are located.
  • the embodiments described herein can be utilized for sputter deposition on large area substrates, e.g., for lithium battery manufacturing or electrochromic windows.
  • large area substrates e.g., for lithium battery manufacturing or electrochromic windows.
  • one or more thin film batteries can be formed on a large area substrate supported by the carrier according to the embodiments described herein.
  • a large area substrate can be GEN 4.5, which corresponds to about 0.67 m 2 substrates (0.73x0.92m), GEN 5, which corresponds to about 1.4 m 2 substrates (1.1 m x 1.3 m), GEN 7.5, which corresponds to about 4.29 m 2 substrates (1.95 m x 2.2 m), GEN 8.5, which corresponds to about 5.7m 2 substrates (2.2 m x 2.5 m), or even GEN 10, which corresponds to about 8.7 m 2 substrates (2.85 m x 3.05 m). Even larger generations such as GEN 11 and GEN 12 and corresponding substrate areas can similarly be implemented.
  • the carriers are configured for supporting two or more substrates.
  • an array of substrates positioned on an inlay portion or sub-carriers e.g., DIN A5, A4, or A3 on large carriers (e.g. with a deposition window of Gen 4.5) can be used.
  • the embodiments described herein can be used in the manufacture of, for example, thin film batteries, electrochromic windows and displays, for example, liquid crystal displays (LCD), PDPs (Plasma Display Panel), organic light-emitting diode (OLED) displays, and the like.
  • substrate as used herein shall particularly embrace inflexible substrates, e.g., glass plates and metal plates. However, the present disclosure is not limited thereto and the term “substrate” can also embrace flexible substrates such as a web or a foil. According to some embodiments, the substrate can be made from any material suitable for material deposition.
  • the substrate can be made from a material selected from the group consisting of glass (for instance soda-lime glass, borosilicate glass etc.), metal, polymer, ceramic, compound materials, carbon fiber materials, mica or any other material or combination of materials which can be coated by a deposition process.
  • glass for instance soda-lime glass, borosilicate glass etc.
  • metal for instance soda-lime glass, borosilicate glass etc.
  • polymer for instance soda-lime glass, borosilicate glass etc.
  • ceramic for instance soda-lime glass, borosilicate glass etc.
  • compound materials for instance carbon fiber materials, mica or any other material or combination of materials which can be coated by a deposition process.
  • mica any other material or combination of materials which can be coated by a deposition process.
  • FIG. 1 illustrates a carrier 100 for supporting at least one substrate during a sputter deposition process according to embodiments described herein.
  • FIG. 2 shows a cross-sectional side view of the carrier 100 along line X-X'.
  • the carrier 100 includes non-conductive carrier body 102 having a first end 111 and an opposing second end 112.
  • the carrier body 102 includes a surface 103 configured to face one or more sputter deposition sources (not shown) during the sputter deposition process, for example, an AC sputter deposition process.
  • the carrier 100 may include an electrically insulated first guiding device 120 provided at the first end 111 of the ceramic carrier body 102 and an electrically insulated second guiding device 130 provided at the second end 112 of the ceramic carrier body 102.
  • the "first end" of the ceramic carrier body may be understood as a first edge portion of the ceramic carrier body.
  • the "second end” of the ceramic carrier body may be understood as a second edge portion opposing the first edge portion of the of the ceramic carrier body.
  • embodiments described herein provide a carrier having a reduced susceptibility to different electrical potentials such that the occurrence of arcing can be reduced or even avoided.
  • a damage of the substrate due to arcing can be avoided.
  • carrier according to embodiments described herein in sputter deposition processes the homogeneity of the material layer deposited on the substrate can be improved since arcing does not affect, or interfere with, the sputter deposition process. Accordingly, a contamination of the material layer due to particles created by the arcing can be reduced or even avoided.
  • a “non-conductive carrier body” may be understood as a carrier body having a non-conductive material.
  • a “non-conductive material” may be understood as at least one material selected from the group consisting of a ceramic material, a glass-ceramic material, a high temperature electrically insulating polymer and any combination thereof.
  • the non- conductive material can be a meal oxide, e.g. an aluminum oxide A1 2 0 3 or a silicon oxide Si0 2 .
  • a non-conductive material may be understood as a material which exhibits poor or even no electrical conductivity, particularly in comparison to conductive materials.
  • non-conductive materials or insulators have a higher resistivity than semiconductors or conductors.
  • a non- conductive material of the present disclosure may have a resistivity of at least 10 10 (Ohm « m) at 20°C, specifically of at least 10 14 (Ohm « m) at 20°C, and more specifically of at least 10 16 (Ohm « m) at 20°C.
  • the carrier may include a ceramic material, particularly a glass-ceramics material (e.g., Ceran®).
  • a glass-ceramics material can be understood as polycrystalline materials produced through controlled crystallization of a base glass.
  • the glass-ceramic material can be selected from the group including, but not limited to, Li 2 0 x A1 2 0 3 x nSi0 2 -systems (LAS-systems), MgO x A1 2 0 3 x nSi0 2 -systems (MAS-systems), ZnO x A1 2 0 3 x nSi0 2 -systems (ZAS- systems), and any combination thereof.
  • LAS-systems Li 2 0 x A1 2 0 3 x nSi0 2 -systems
  • MAS-systems MgO x A1 2 0 3 x nSi0 2 -systems
  • ZnO x A1 2 0 3 x nSi0 2 -systems ZnO x A1 2 0 3 x nSi0 2 -systems
  • a carrier having a carrier body of ceramic material provides for improved mechanical stability compared to conventional carriers of metallic materials, particularly at high temperatures, for example above 400°C.
  • a carrier body of ceramic material provides for the possibility of weight reduction because the carrier body may be designed with a smaller thickness having the same mechanical stability of a carrier of metallic material with a greater thickness.
  • a second element contacting the first element is of a non- conductive material.
  • electrically insulated may be understood as a configuration which includes no metal-to-metal contact.
  • electrically insulated may be understood a as configuration in which the interface of two or more elements is metal-free.
  • an "electrically insulated" guiding device as described herein may be understood as a guiding device in which no conductive interfaces between individual parts of the guiding device and the carrier body to which the guiding device may be connected exists.
  • the carrier 100 includes a first guiding device 120, schematically illustrated as a top bar, and a second guiding device 130, schematically illustrated as a bottom bar.
  • a "guiding device” may be understood as a device configured for guiding a carrier as described herein along a transportation path of a processing apparatus, e.g. an inline deposition tool.
  • the transportation path can be a linear transportation path.
  • one or more sputter deposition sources can be arranged along the linear transportation path, as explained in more detail with respect to FIG. 8 herein.
  • the carrier may be configured to be used in an AC sputter deposition process.
  • An AC sputter deposition process is a sputter deposition process where the sign of the cathode voltage is varied at a predetermined rate, for example, 13.56 MHz, particularly 27.12 MHz, more particularly 40.68 MHz, or another multiple of 13.56 MHz.
  • the AC sputter deposition process can be a HF (high frequency) or RF (radio frequency) sputter deposition process.
  • the substrate can include a front surface and a back surface, wherein the front surface is a surface on which the material layer is to be deposited in the sputter deposition process.
  • the front surface can be a surface of the substrate that is facing towards the one or more sputter deposition sources during the sputter deposition process.
  • the front surface and the back surface can be opposing surfaces of the substrate.
  • the back surface can be a surface of the substrate that is facing away from the one or more sputter deposition sources during the sputter deposition process.
  • the carrier body 102 can be a plate.
  • the carrier body 102 can support a surface of the substrate, such as the back surface of the substrate.
  • the carrier body 102 can include, or be, a frame having one or more frame elements. As exemplarily shown in FIG. 1, the carrier body 102 can be a rectangular- shaped frame.
  • the carrier body 102 can have an aperture opening 110.
  • the aperture opening 110 can be defined by the one or more frame elements of the carrier body 102.
  • the aperture opening 110 can be configured to accommodate the at least one substrate.
  • the aperture opening 110 can be configured to accommodate one substrate or can be configured to accommodate two or more substrates.
  • the frame-shaped carrier body can support a surface of the substrate, e.g., along the periphery of the substrate. In some embodiments, the frame-shaped carrier body can be used to mask the substrate.
  • the aperture opening 110 can have a variable size.
  • the substrate can be positioned within the aperture opening 110 and the size of the aperture opening 110 can be decreased to hold or clamp the substrate at the substrate edges.
  • the size of the aperture opening 110 can be increased to release the substrate edges.
  • the carrier can include one or more holding devices configured for holding the substrate at the carrier 100.
  • FIGS. 3 A and 3B show cross-sectional side views of an electrically insulated first guiding device 120 provided at a first end 111 of a carrier 100 according to embodiments described herein.
  • FIGS. 4A to C show cross-sectional side views of an electrically insulated second guiding device 130 provided at a second end 112 of a carrier 100 according to embodiments described herein.
  • the electrically insulated first guiding device 120 may include at least one electrically insulated magnet element 121 for magnet assisted contactless guiding, as exemplarily shown in FIG. 3A.
  • the magnet element 121 may be surrounded or embedded within an insulation 125.
  • the insulation may be a coating as described herein.
  • the magnet assisted contactless guiding of the carrier via the first guiding device 120 may be realized by a corresponding magnetic guide rail 160.
  • the corresponding magnetic guide rail 160 may be configured to surround the first guiding device 120, for example in a C-shape as show in FIG. 3B.
  • the corresponding magnetic guide rail 160 may include magnetic guiding elements 161.
  • the magnetic guiding elements may be surrounded or embedded within an insulation 125, similarly to the insulated magnet element 121 of the first guiding device 120.
  • the electrically insulated first guiding device 120 is fixed to the first end of the ceramic carrier body 102 via at least one electrically insulated first fixing element 122.
  • the at least one electrically insulated first fixing element 122 may be configured to fix a connection of the carrier body 102 with the first guiding device 120.
  • the first fixing element 122 can include at least one non-conductive material as described herein, for example at least one material selected from the group consisting of a ceramic material, a glass-ceramic material, a high temperature electrically insulating polymer as described herein and any combination thereof.
  • the electrically insulated first guiding device 120 comprises a high temperature electrically insulating polymer, particularly at least one material selected from the group consisting of: polyimides (PI); polyamidimides (PAI); polyaryletherketones (PAEK); polyetherketone (PEEK); polyphenylsulfides (PPS); polyarylsulfones (PSU); fluoric polymers, for example polytetrafluoroethylene (PTFE), polyvinylidene fluoride (PVDF).
  • PI polyimides
  • PAI polyamidimides
  • PAEK polyaryletherketones
  • PEEK polyetherketone
  • PPS polyphenylsulfides
  • PSU polyarylsulfones
  • fluoric polymers for example polytetrafluoroethylene (PTFE), polyvinylidene fluoride (PVDF).
  • the electrically insulated second guiding device 130 may include a guide rail 132, as exemplarily shown in FIG.4A.
  • the guide rail 132 may be adapted to be guided by corresponding rollers 135, as exemplarily shown in FIG4B.
  • the electrically insulated second guiding device 130 may include rollers 131 adapted to be guided by a corresponding guiding element 136, such as a guide rail.
  • the guide rail 132 and/or the corresponding rollers 135 and/or the rollers 131 of the second guiding device 130 and/or the corresponding guiding element 136 may include a non-conductive material and/or an electrically insulating material, for example a high temperature electrically insulating polymer as described herein.
  • the electrically insulated second guiding device 130 is fixed to the second end 112 of the ceramic carrier body 102 via at least one electrically insulated second fixing element 123.
  • the at least one electrically insulated second fixing element 123 may be configured to fix a connection of the carrier body 102 with the second guiding device 130.
  • the second fixing element 123 can include at least one non-conductive material as described herein, for example at least one material selected from the group consisting of a ceramic material, a glass-ceramic material, a high temperature electrically insulating polymer as described herein and any combination thereof.
  • the electrically insulated second guiding device (130) comprises a high temperature electrically insulating polymer, particularly at least one material selected from the group consisting of: polyimides (PI); polyamidimides (PAI); polyaryletherketones (PAEK); polyetherketone (PEEK); polyphenylsulfides (PPS); polyarylsulfones (PSU); fluoric polymers, for example polytetrafluoroethylene (PTFE), polyvinylidene fluoride (PVDF).
  • PI polyimides
  • PAI polyamidimides
  • PAEK polyaryletherketones
  • PEEK polyetherketone
  • PPS polyphenylsulfides
  • PSU polyarylsulfones
  • fluoric polymers for example polytetrafluoroethylene (PTFE), polyvinylidene fluoride (PVDF).
  • the electrically insulated first guiding device 120 and/or the electrically insulated second guiding device 130 comprise a coating of electrically insulating material.
  • the coating of the first guiding device 120 and/or the second guiding device 130 may be at least provided at an interface between the first guiding device 120 and/or the second guiding device 130 and the carrier body 102.
  • the coating can include at least one non-conductive material as described herein, for example at least one material selected from the group consisting of a ceramic material, a glass-ceramic material, an high temperature electrically insulating polymer as described herein and any combination thereof.
  • the first guiding device 120 and/or the second guiding device 130 may be at least partially coated with an electrically insulating polymer as described herein, specifically at least at a contact interface between the between the first guiding device 120 and/or the second guiding device 130 and the carrier body 102.
  • the coating of the first guiding device 120 and/or the second guiding device 130 may be provided over a larger area than the contact interface between the between the first guiding device 120 and/or the second guiding device 130 and the carrier body 102.
  • the coating may cover more than 50% of the surface area of the first guiding device 120 and/or the second guiding device 130, particularly the coating can cover 100% of the surface area of the first guiding device 120 and/or the second guiding device 130.
  • the coating can have a thickness in a range of 50 to 600 ⁇ .
  • the coating can have a thickness in a range of 100 to 300 ⁇ .
  • the coating 115 can have a thickness in a range of 150 to 200 ⁇ .
  • the thickness of the coating can be selected such that an insulation against a potential difference between the carrier and the sputter deposition sources is provided.
  • the term "potential difference" can specifically refer to a potential difference between the one or more sputter deposition sources and the substrate or between the one or more sputter deposition sources and the carrier.
  • potential values may be between 50V and 600V, specifically between 100V and 400V, and more specifically between 200V and 300V.
  • the thickness of the coating 115 depends on properties of the material used for the coating like at least one of dielectric strength, relative permittivity and dielectric loss angle.
  • the carrier body 102 can include side surfaces, such as at least one first side surface 106, e.g., at the top of the carrier body 102 and at least one second side surface 107, e.g., at the bottom of the carrier body 102, as exemplarily shown in FIG. 2.
  • the at least one first side surface 106 and the at least one second side surface 107 can also be referred to as "horizontal side surfaces”.
  • the carrier body 102 can further include at least one third side surface 108 and at least one fourth side surface 109 (see in FIG. 1)., e.g., each connecting to the at least one first side surface 106 and the at least one second side surface 107.
  • the at least one third side surface 108 and the at least one fourth side surface 109 can also be referred to as "vertical side surfaces".
  • the side surfaces can include outer side surfaces, e.g., defining an outer circumference or edge of the carrier body 102.
  • the side surfaces can further include inner side surfaces defining the aperture opening 110.
  • the term "vertical direction” or “vertical orientation” is understood to distinguish over “horizontal direction” or “horizontal orientation”. That is, the "vertical direction” or “vertical orientation” relates to a substantially vertical orientation e.g. of the carrier and the substrate, wherein a deviation of a few degrees, e.g. up to 10° or even up to 15°, from an exact vertical direction or vertical orientation is still considered as a "substantially vertical direction” or a “substantially vertical orientation”.
  • the vertical direction can be substantially parallel to the force of gravity.
  • FIG. 5 A shows a front view of a carrier body 102 configured for supporting two or more substrates 10 during a sputter deposition process according to embodiments described herein.
  • FIG. 5B shows a cross-sectional view of the carrier 500 of FIG. 5A.
  • the carrier body 102 has an aperture opening 110 configured to accommodate an inlay portion 150.
  • the inlay portion 150 can be configured to support two or more substrates 10.
  • the inlay portion 150 can be configured to support five or more substrates, particularly ten or more substrates, and more particularly 20 or more substrates.
  • the inlay portion 150 can be a plate. In some implementations, the inlay portion 150 can be configured to be detachable from the carrier body 102. As an example, the inlay portion 150 can be configured to be attached to, and detached from, the aperture opening 110. The inlay portion 150 can have a size corresponding to the size of the aperture opening 510. As an example, the inlay portion 150 can be held or fixed in the aperture opening 110.
  • the inlay portion 150 can be made of, or coated with, a non-conductive material as described herein.
  • the inlay portion 150 can be made of the same material as the carrier body 102 as described herein.
  • the inlay portion 150 may include a coating of the same material as the carrier body 102 as described herein.
  • a surface of the inlay portion 150 may be at least partially covered with a non-conductive material as described herein.
  • the surface of the inlay portion 150 which is at least partially covered with a non-conductive material may be a front surface, e.g. the surface of the inlay portion 150 facing one or more sputter deposition sources during the sputter deposition process.
  • another surface (e.g., a back surface) of the inlay portion 150 configured to face away from the one or more sputter deposition sources during the sputter deposition process can be at least partially, and specifically completely, covered or coated with the a non-conductive material as described herein.
  • FIG. 6A shows a front view of a carrier 100 for supporting at least one substrate during a sputter deposition process according to embodiments described herein.
  • the carrier 100 includes a carrier body 102 having two or more segments, such as a first segment 102a and a second segment 102b.
  • the carrier body 102 can be vertically divided to form the two or more segments.
  • the two or more segments may be configured for supporting the at least one substrate.
  • the two or more segments, such as the first segment 102a and the second segment 102b may be electrically insulated from each other.
  • the two or more segments can reduce or even avoid situations where the carrier 100 is exposed to two different potentials, e.g., two different RF potentials or plasma potentials during the sputter deposition process.
  • the two different potentials could, for example, originate from two different sputter deposition sources when the carrier 100 passes two sputter deposition sources arranged side by side in one deposition chamber.
  • the first segment 102a can be configured to face a first sputter deposition source of the one or more sputter deposition sources and the second segment 102b can be configured to face a second sputter deposition source of the one or more sputter deposition sources.
  • the two or more segments can be plates or frames.
  • the two or more segments may be C-shaped with the open portions of the C- shapes being oriented towards each other.
  • the first segment 102a can form a "C”
  • the second segment 102b can form an inverted or mirrored "C”.
  • the carrier body 102 can have an aperture opening 110, for example, provided or defined by the two or more segments.
  • the aperture opening 110 can be configured to accommodate an inlay portion as described with respect to FIGS. 5A and 5B. As exemplarily shown in FIGS.
  • the carrier 100 having two or more segments include a first guiding device 120 and a second guiding device 130 as described herein, for example a first guiding device and a second guiding device as explained in connection with FIGS. 3 A, 3B and FIGS. 4A to 4 C.
  • the carrier body 102 can include a gap 117 between the first segment 102a and the second segment 102b.
  • the gap 117 can be configured to electrically isolate the first segment 102a and the second segment 102b from each other.
  • the term "gap" as used herein can refer to an area or separation area between the two or more segments where the two or more segments do not contact each other.
  • the first segment 102a and the second segment 102b can be distanced or spaced apart from each other.
  • the gap can, for example, vertically divide the carrier body 102 into the two or more segments.
  • the gap may divide the carrier body 102 substantially parallel to the rotational axis of the sputter deposition sources.
  • the gap 117 can be an empty area, as exemplarily shown in FIG. 6A.
  • the gap 117 can be partially or completely filled with an insulator 114, particularly an insulator of non-conductive material as described herein.
  • the gap 117 can be configured to extend in a direction substantially parallel to the rotational axis of the one or more sputter deposition sources.
  • FIG. 7 shows a carrier 100 for supporting at least one substrate during a sputter deposition process according to further embodiments described herein.
  • the carrier 100 includes a carrier body 102 having a first segment 102a and a second segment 102b separated by a gap 117.
  • the gap 117 can be configured as described with reference to FIGS.
  • the two or more segments can be plates or frames. With exemplarily reference to FIG. 7, the two or more segments may be O-shaped (e.g., ring-shaped) frames arranged adjacent to each other. As an example, the two or more segments can be rectangular frames.
  • the first segment 102a can include a first aperture opening 110a configured to accommodate a first substrate or a first inlay portion.
  • the second segment 102b can include a second aperture opening 110b configured to accommodate a second substrate or a second inlay portion.
  • the first inlay portion and the second inlay portion can be configured as described with respect to FIGS. 5 A and 5B.
  • Figure 8 shows a schematic top view of an apparatus 200 for sputter deposition on at least one substrate according to embodiments described herein.
  • the apparatus 200 includes a vacuum chamber 202 (also referred to as "deposition chamber” or “vacuum processing chamber”), one or more sputter deposition sources, such as a first sputter deposition source 230a and a second sputter deposition source 230b in the vacuum chamber 202, and a carrier 100 according to embodiments described herein for supporting at least one substrate, such as a first substrate 10a and a second substrate 10b, during a sputter deposition.
  • a vacuum chamber 202 also referred to as "deposition chamber” or “vacuum processing chamber”
  • sputter deposition sources such as a first sputter deposition source 230a and a second sputter deposition source 230b in the vacuum chamber 202
  • carrier 100 according to embodiments described herein for supporting at least one substrate, such as a first substrate 10a and
  • the carrier 100 is illustrated as a segmented carrier, the carrier 100 could be configured according to any one of the embodiments described herein.
  • the first sputter deposition source 230a and the second sputter deposition source 230b can be, for example, rotatable cathodes having targets of the material to be deposited on the substrate(s).
  • further chambers can be provided adjacent to the vacuum chamber 202.
  • the vacuum chamber 202 can be separated from adjacent chambers by a valve having a valve housing 204 and a valve unit 206. After the carrier 100 with the at least one substrate thereon is, as indicated by arrow 1, inserted into the vacuum chamber 202, the valve unit 206 can be closed.
  • the atmosphere in the vacuum chambers 202 can be individually controlled by generating a technical vacuum, for example with vacuum pumps connected to the vacuum chamber, and/or by inserting process gases in a deposition region in the vacuum chamber 202.
  • process gases can include inert gases such as argon and/or reactive gases such as oxygen, nitrogen, hydrogen and ammonia (NH3), Ozone (03), activated gases or the like.
  • rollers 210 can be provided in order to transport the carrier 100, having the first substrate 10a and the second substrate 10b thereon, into and out of the vacuum chamber 202.
  • the carrier 100 can include a carrier body having two or more segments, such as a first segment 102a and a second segment 102b, configured for supporting a first substrate 10a and a second substrate 10b during the sputter deposition process. As shown in FIG. 8, the first segment 102a can support the first substrate 10a and the second segment 102b can support the second substrate 10b.
  • the first segment 102a can be configured to face the first sputter deposition source 230a and the second segment 102b can be configured to face the second sputter deposition source 230b, for example, in a static deposition process.
  • the carrier 100 can be vertically divided into the two or more segments.
  • the gap that divides the carrier body 102 can be substantially parallel to the rotational axis of the sputter deposition sources to reduce or even avoid situations where the carrier 100 is exposed to two different potentials, e.g., two different RF potentials or plasma potentials originating from two different sputter deposition sources positioned side by side in one deposition chamber.
  • the sputter deposition process can be an RF frequency (RF) sputter deposition process.
  • RF RF frequency
  • the RF sputter deposition process can be used when the material to be deposited on the substrate is a dielectric material. Frequencies used for RF sputter processes can be about 13.56 MHZ or higher.
  • the apparatus 200 can have an AC power supply 240 connected to the one or more sputter deposition sources.
  • the first sputter deposition source 230a and the second sputter deposition source 230b can be connected to the AC power supply 240 such that the first sputter deposition source 230a and the second sputter deposition source 230b can be biased in an alternating manner.
  • the one or more sputter deposition sources can be connected to the same AC power supply. In other embodiments, each sputter deposition source can have its own AC power supply.
  • the sputter deposition process can be conducted as magnetron sputtering.
  • magnet sputtering refers to sputtering performed using a magnet assembly, e.g., a unit capable of generating a magnetic field.
  • a magnet assembly can consist of a permanent magnet.
  • This permanent magnet can be arranged within a rotatable target or coupled to a planar target in a manner such that the free electrons are trapped within the generated magnetic field generated below the rotatable target surface.
  • Such a magnet assembly can also be arranged coupled to a planar cathode.
  • Magnetron sputtering can be realized by a double magnetron cathode, e.g. the first sputter deposition source 230a and the second sputter deposition source 230b, such as, but not limited to, a TwinMagTM cathode assembly.
  • the apparatus 200 can be configured to deposit lithium or a lithium alloy on the at least one substrate.
  • the apparatus 200 can be configured to deposit at least one of a metal oxide, such as AI 2 O 3 or Si0 2 , and a target material.
  • the target material can include one or more element(s) selected from the group consisting of lithium, tantalum, molybdenum, niobium, titanium, manganese, nickel, cobalt, indium, gallium, zinc, tin, silver, copper, and any combination thereof.
  • the apparatus can be configured to deposit lithium phosphorus oxynitride (LiPON) on the at least one substrate.
  • LiPON lithium phosphorus oxynitride
  • LiPON is an amorphous glassy material used as an electrolyte material in thin film batteries. Layers of LiPON can be deposited over a cathode material of a thin film battery by RF magnetron sputtering forming a solid electrolyte.
  • the carriers and the apparatuses utilizing the carriers described herein can be used for vertical substrate processing.
  • the carrier of the present disclosure is configured for holding the at least one substrate in a substantially vertical orientation.
  • the term "vertical substrate processing" is understood to distinguish over "horizontal substrate processing".
  • vertical substrate processing relates to a substantially vertical orientation of the carrier and the substrate during substrate processing, wherein a deviation of a few degrees, e.g. up to 10° or even up to 15°, from an exact vertical orientation is still considered as vertical substrate processing.
  • the vertical direction can be substantially parallel to the force of gravity.
  • the apparatus 200 for sputter deposition on at least one substrate can be configured for sputter deposition on a vertically oriented substrate.
  • the carrier and the substrate are static or dynamic during sputtering of the deposition material.
  • a dynamic sputter deposition process can be provided, e.g., for thin film battery manufacturing.
  • the embodiments of the present disclosure can be particularly beneficial for such dynamic sputter deposition processes, since electrically conducting materials moving through an RF plasma can cause arcing due to different electrical potentials.
  • the electrical insulation provided by the embodiments of the present disclosure can reduce or even avoid the occurrence of arcing, in particular when the carrier moves through the vacuum processing chamber.
  • the sputter deposition sources can be rotatable sputter deposition sources or rotatable cathodes.
  • the sputter deposition sources can be rotatable around a rotational axis.
  • the rotational axis can be a vertical rotational axis.
  • the present disclosure is not limited to rotatable sputter deposition sources or rotatable cathodes.
  • the sputter deposition sources can be planar sputter deposition sources or planar cathodes.
  • FIG. 9 shows a block diagram illustrating a method for sputter deposition on at least one substrate according to embodiments described herein.
  • the method includes positioning 310 of the at least one substrate on a carrier 100 according to the embodiments described herein, and depositing 320 a layer of a material on the at least one substrate using an AC sputter deposition process.
  • the method for sputter deposition on at least one substrate can be conducted by means of computer programs, software, computer software products and the interrelated controllers, which can have a CPU, a memory, a user interface, and input and output means being in communication with the corresponding components of the apparatus for sputter deposition on at least one substrate.
  • the embodiments of the present disclosure provide an electrically insulated or passivated carrier.
  • the carrier can have an insulation portion and/or two or more electrically insulated segments to electrically isolate or passivate the carrier.
  • the carrier has a reduced susceptibility to electrical potentials, and the occurrence of arcing can be reduced or even avoided. Damage to the substrate due to arcing can be avoided. Further, arcing does not affect, or interfere with, the sputter deposition process, and a homogeneity of the material layer deposited on the substrate can be improved. A contamination of the sputtered material layer due to particles created by the arcing can be reduced or even avoided.

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Abstract

L'invention concerne un support (100) permettant de supporter au moins un substrat au cours d'un processus de dépôt par pulvérisation cathodique. Le support (100) comprend un corps de support non conducteur (102) ayant une première extrémité (111) et une seconde extrémité opposée (112) ; un premier dispositif de guidage isolé électriquement (120) placé au niveau de la première extrémité (111) du corps de support en céramique (102) ; et un second dispositif de guidage isolé électriquement (130) placé au niveau de la seconde extrémité (112) du corps de support en céramique (102).
PCT/EP2015/071609 2015-09-21 2015-09-21 Support de substrat, ainsi qu'appareil de dépôt par pulvérisation cathodique et procédé utilisant celui-ci WO2017050350A1 (fr)

Priority Applications (2)

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CN201580083279.7A CN108138314A (zh) 2015-09-21 2015-09-21 基板载体、以及溅射沉积设备和其使用方法
PCT/EP2015/071609 WO2017050350A1 (fr) 2015-09-21 2015-09-21 Support de substrat, ainsi qu'appareil de dépôt par pulvérisation cathodique et procédé utilisant celui-ci

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PCT/EP2015/071609 WO2017050350A1 (fr) 2015-09-21 2015-09-21 Support de substrat, ainsi qu'appareil de dépôt par pulvérisation cathodique et procédé utilisant celui-ci

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WO2019015783A1 (fr) * 2017-07-21 2019-01-24 Applied Materials, Inc. Système de lévitation magnétique, support de système de lévitation magnétique et procédé de mise en œuvre d'un système de lévitation magnétique
KR20190010525A (ko) * 2017-07-21 2019-01-30 어플라이드 머티어리얼스, 인코포레이티드 자기 부상 시스템, 자기 부상 시스템을 위한 캐리어, 및 자기 부상 시스템을 동작시키는 방법
CN109643680A (zh) * 2017-07-21 2019-04-16 应用材料公司 磁悬浮系统、用于磁悬浮系统的载体和操作磁悬浮系统的方法
KR102174195B1 (ko) * 2017-07-21 2020-11-04 어플라이드 머티어리얼스, 인코포레이티드 자기 부상 시스템, 자기 부상 시스템을 위한 캐리어, 및 자기 부상 시스템을 동작시키는 방법
WO2021228389A1 (fr) * 2020-05-13 2021-11-18 Applied Materials, Inc. Support pour un système de transport à rouleaux, système de transport à rouleaux et appareil de traitement sous vide doté de celui-ci
WO2021228387A1 (fr) * 2020-05-13 2021-11-18 Applied Materials, Inc. Support pour système de transport à rouleaux, système de transporte à rouleaux et appareil de traitement sous vide
WO2022194341A1 (fr) * 2021-03-15 2022-09-22 Applied Materials, Inc. Support pour transporter un objet dans une chambre à vide, procédé de fabrication d'un support, système de transport de support et appareil de traitement sous vide

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