WO2015180798A1 - Support et procédé pour supporter un substrat dans une chambre de traitement sous vide - Google Patents

Support et procédé pour supporter un substrat dans une chambre de traitement sous vide Download PDF

Info

Publication number
WO2015180798A1
WO2015180798A1 PCT/EP2014/061280 EP2014061280W WO2015180798A1 WO 2015180798 A1 WO2015180798 A1 WO 2015180798A1 EP 2014061280 W EP2014061280 W EP 2014061280W WO 2015180798 A1 WO2015180798 A1 WO 2015180798A1
Authority
WO
WIPO (PCT)
Prior art keywords
substrate
carrier
supporting
bending axis
distance
Prior art date
Application number
PCT/EP2014/061280
Other languages
English (en)
Inventor
Ralph Lindenberg
Wolfgang Klein
Simon Lau
Thomas Berger
Original Assignee
Applied Materials, Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials, Inc. filed Critical Applied Materials, Inc.
Priority to PCT/EP2014/061280 priority Critical patent/WO2015180798A1/fr
Priority to CN201490001478.XU priority patent/CN206927946U/zh
Priority to KR2020167000065U priority patent/KR20170000465U/ko
Priority to TW104117013A priority patent/TW201607906A/zh
Publication of WO2015180798A1 publication Critical patent/WO2015180798A1/fr

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50—Substrate holders
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/562—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks for coating elongated substrates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54—Apparatus specially adapted for continuous coating
    • C23C16/545—Apparatus specially adapted for continuous coating for coating elongated substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32733—Means for moving the material to be treated
    • H01J37/32752—Means for moving the material to be treated for moving the material across the discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67161—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers
    • H01L21/67173—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers in-line arrangement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67703—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
    • H01L21/67712—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations the substrate being handled substantially vertically
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/67748—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber horizontal transfer of a single workpiece
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/6776—Continuous loading and unloading into and out of a processing chamber, e.g. transporting belts within processing chambers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68721—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge clamping, e.g. clamping ring

Definitions

  • Embodiments of the present disclosure relate to a carrier and a method for supporting a substrate in a vacuum processing chamber, and relate to an apparatus for depositing a layer on a substrate.
  • Embodiments particularly relate to carriers for substrate processing, e.g., for layer deposition, and to carriers for supporting a large area substrate in a processing apparatus for processing a large area substrate.
  • substrates may be coated by a physical vapor deposition (PVD) process, a chemical vapor deposition (CVD) process, a plasma enhanced chemical vapor deposition (PECVD) process etc.
  • PVD physical vapor deposition
  • CVD chemical vapor deposition
  • PECVD plasma enhanced chemical vapor deposition
  • the process can be performed in a processing apparatus or processing chamber, where the substrate to be coated is located.
  • a deposition material is provided in the processing apparatus.
  • a plurality of materials, but also oxides, nitrides or carbides thereof, may be used for deposition on the substrate.
  • other processing steps like etching, structuring, annealing, or the like can be conducted in processing chambers.
  • Coated materials may be used in several applications and in several technical fields. For instance, an application lies in the field of microelectronics, such as generating semiconductor devices. Also, substrates for displays are often coated by a PVD process. Further applications include insulating panels, organic light emitting diode (OLED) panels, substrates with TFT, color filters or the like.
  • OLED organic light emitting diode
  • Substrates can be supported on carriers, particularly during processing of the substrate.
  • the carrier drives the glass or the substrate through the processing apparatus.
  • the carrier can support a surface of the substrate e.g. along the periphery thereof or the surface as such.
  • a frame shaped carrier can be used to mask a glass substrate, wherein the carrier provides an aperture for coating material to be deposited on the exposed substrate portion or an aperture for other processing steps acting on the substrate portion, which is exposed by the aperture.
  • the tendency to larger and also thinner substrates can result in an instability of the substrate positioning e.g. due to arbitrary bending, sagging and/or bulging of the substrate, in particular when the substrate is carried in a vertical alignment and/or due to stress applied to the substrate during deposition of the layers.
  • Such an instability of the substrate positioning can, in turn, cause problems due to an increasing likelihood of breakage, high stress in an area of holding devices or fixations, shaking during venting etc.
  • a quality, e.g., uniformity, of the deposited layers can be reduced.
  • a carrier for supporting a substrate in a vacuum processing chamber having a linear transportation path includes a carrier body configured for transportation along the linear transportation path, and at least one substrate supporting arrangement provided at the carrier body and configured for supporting the substrate, wherein the substrate supporting arrangement is configured to define at least one bending axis for the substrate, wherein the at least one bending axis has an essentially vertical orientation.
  • an apparatus for depositing a layer on a substrate includes a vacuum processing chamber having a linear transportation path and adapted for layer deposition therein, a carrier within the processing chamber, and a deposition source for depositing material forming the layer.
  • the carrier includes a carrier body configured for transportation along the linear transportation path, and at least one substrate supporting arrangement provided at the carrier body and configured for supporting the substrate, wherein the substrate supporting arrangement is configured to define at least one bending axis for the substrate, wherein the at least one bending axis has an essentially vertical orientation.
  • a method for supporting a substrate in a vacuum processing chamber includes bending the substrate about at least one bending axis, wherein the at least one bending axis has an essentially vertical orientation.
  • a carrier for supporting a substrate in a vacuum processing chamber having a linear transportation path includes a carrier body configured for transportation along the linear transportation path, wherein the carrier body is configured to support the substrate in a vertical orientation, and at least one substrate supporting arrangement provided at the carrier body and configured for supporting the substrate, wherein the substrate supporting arrangement is configured to define at least one bending axis for the substrate, wherein the at least one bending axis has an essentially vertical orientation.
  • the substrate supporting arrangement further includes at least one of at least one support surface configured for supporting the substrate, wherein the at least one support surface has a curvature defining the at least one bending axis for the substrate, and two or more holding devices, the two or more holding devices are arranged to hold the substrate at a first distance from the linear transportation path at a first position and at a second distance from the linear transportation path at a second position, wherein the first distance is greater than the second distance.
  • Embodiments are also directed at apparatuses for carrying out the disclosed methods and include apparatus parts for performing each described method step. These method steps may be performed by way of hardware components, a computer programmed by appropriate software, by any combination of the two or in any other manner. Furthermore, embodiments according to the disclosure are also directed at methods for operating the described apparatus. It includes method steps for carrying out every function of the apparatus.
  • FIG. 1A illustrates a perspective view of a carrier according to embodiments described herein;
  • FIG. IB illustrates a top view of the carrier of figure 1A supporting a substrate
  • FIG. 2A illustrates a perspective view of another carrier according to further embodiments described herein;
  • FIG. 2B illustrates a top view of the carrier of figure 2A supporting a substrate
  • FIG. 3A illustrates a perspective view of still another carrier according to further embodiments described herein;
  • FIG. 3B illustrates a top view of the carrier of figure 3A supporting a substrate
  • FIG. 4A illustrates a perspective view of yet another carrier according to further embodiments described herein;
  • FIG. 4B illustrates a top view of the carrier of figure 4A supporting a substrate
  • FIGs. 5 A and 5B illustrate top views of carriers according to embodiments described herein;
  • FIGs. 6 A, 6B and 6C illustrate top views of carriers according to embodiments described herein;
  • FIG. 7 shows a sectional view of an apparatus for depositing a layer of material on a substrate utilizing a carrier according to embodiments described herein;
  • FIG. 8 shows a flow chart of a method for supporting a substrate in a vacuum processing chamber utilizing a carrier according to embodiments described herein.
  • a carrier for supporting a substrate in a vacuum processing chamber having a linear transportation path includes a carrier body configured for transportation along the linear transportation path, and at least one substrate supporting arrangement provided at the carrier body and configured for supporting the substrate, wherein the substrate supporting arrangement is configured to define at least one bending axis for the substrate, and wherein the at least one bending axis has an essentially vertical orientation.
  • the substrate in order to stabilize the substrate e.g. in a vertical position, is bent about the at least one bending axis. Applying a shape to the substrate by bending the substrate about the bending axis can increase a structural strength of the substrate. In some implementations, more than one bending axis is provided.
  • the substrate supporting arrangement configured to define the at least one bending axis for the substrate, the substrate can be stably positioned on, and held by, the carrier.
  • the substrate supporting arrangement is configured to define the at least one bending axis, i.e. a number of n bending axes, wherein n is an integer equal to or greater than 1 (n > 1). n can for example be in the range of 1 to 10, specifically in the range of 1 to 5, and more specifically 1, 2, 3, 4 or 5. [0020] According to some embodiments, which can be combined with other embodiments described herein, the substrate supporting arrangement is configured to define the at least one bending axis for the substrate to apply a concave or convex shape to the substrate.
  • concave as used herein may mean curving in or inwardly rounded about the at least one bending axis, wherein the at least one bending axis can be an axis of symmetry of the concave shape applied to the substrate.
  • convex as used herein may mean curved or rounded outward e.g. about the at least one bending axis, wherein the at least one bending axis can be an axis of symmetry of the convex shape applied to the substrate.
  • substrate as used herein shall embrace substrates, which can be used for display manufacturing, such as glass or plastic substrates.
  • substrates as described herein shall embrace substrates, which can be used for an LCD (Liquid Crystal Display), a PDP (Plasma Display Panel), and the like.
  • LCD Liquid Crystal Display
  • PDP Plasma Display Panel
  • substrate can be understood as "large area substrate”.
  • the substrate may have a size of at least
  • a large area substrate can be GEN 5, which corresponds to about 1.4 m substrates (1.1 m x 1.3 m), GEN 7.5, which corresponds to about 4.39 m substrates (1.95 m x 2.25 m), GEN 8.5, which corresponds to about 5.5 m 2 substrates (2.2 m x 2.5 m), or even GEN 10, which corresponds to about 8.7 m substrates (2.85 m x 3.05 m). Even larger generations such as GEN 11 and GEN 12 and corresponding substrate areas can similarly be implemented.
  • the substrate may be made from any material suitable for material deposition.
  • the substrate may be made from a material selected from the group consisting of glass (for instance soda-lime glass, borosilicate glass etc.), metal, polymer, ceramic, compound materials or any other material or combination of materials, which can be coated by a deposition process.
  • glass for instance soda-lime glass, borosilicate glass etc.
  • metal for instance soda-lime glass, borosilicate glass etc.
  • metal for instance soda-lime glass, borosilicate glass etc.
  • metal for instance soda-lime glass, borosilicate glass etc.
  • metal for instance soda-lime glass, borosilicate glass etc.
  • metal for instance soda-lime glass, borosilicate glass etc.
  • polymer for instance soda-lime glass, borosilicate glass etc.
  • ceramic compound materials or any other material or combination of materials
  • the carriers can improve a stability of the substrate or the substrate positioning.
  • Figure 1A illustrates a perspective view of a carrier 100 according to embodiments described herein
  • figure IB illustrates a top view of the carrier 100 of figure 1A supporting a substrate 101.
  • the carrier 100 includes a carrier body 110 configured for transportation along a linear transportation path, and at least one substrate supporting arrangement 120 provided at the carrier body 110 and configured for supporting the substrate 101, wherein the substrate supporting arrangement 120 is configured to define or provide at least one bending axis 130 for the substrate 101, and wherein the at least one bending axis 130 has an essentially vertical orientation.
  • the term "vertical direction” or “vertical orientation” is understood to distinguish over “horizontal direction” or “horizontal orientation”. That is, the “vertical direction” or “vertical orientation” relates to a substantially vertical orientation e.g. of the carrier and the substrate, wherein a deviation of a few degrees, e.g. up to 10° or even up to 15°, from an exact vertical direction or vertical orientation is still considered as “vertical direction” or “vertical orientation”.
  • the vertical direction or vertical orientation is indicated with reference numeral 131.
  • the vertical direction can be substantially parallel to the force of gravity.
  • the substrate supporting arrangement 120 has at least one support surface 121 configured for supporting the substrate 101, wherein the at least one support surface 121 has a curvature defining the at least one bending axis 130 for the substrate 101.
  • the at least one support surface 121 is a continuous or uninterrupted surface.
  • the at least one support surface 121 can include two or more segments, specifically separated segments, and more specifically spatially separated segments.
  • the at least one support surface 121 has the curvature. In other words, the at least one support surface 121 is a curved or shaped surface.
  • curvature may refer to a non- flat surface, and may particularly refer to an amount by which the at least one support surface 121 deviates from being flat.
  • the curvature may be a concave curvature. In other embodiments, the curvature may be a convex curvature.
  • the curvature has a circular shape, particularly wherein the curvature is a segment of a circle. As shown in figures 1A and IB, the curvature has a radius. The radius may be constant to define a segment of a circle. Other shapes of the curvature are possible, such as a wavelike shape, as will be explained later with reference to figure 6.
  • the at least one support surface 121 extends in a first direction 132, wherein the at least one bending axis 130 is substantially perpendicular to the first direction 132.
  • the first direction 132 can be a lengthwise direction of the at least one support surface 121.
  • the first direction is a horizontal direction, particularly wherein the horizontal direction is substantially perpendicular to the force of gravity.
  • the term "horizontal direction” or “horizontal orientation” is understood to distinguish over the above-mentioned “vertical direction”. That is, the "horizontal direction” relates to a substantially horizontal orientation, i.e., substantially perpendicular to the force of gravity, wherein a deviation of a few degrees, e.g. up to 10° or even up to 15°, from an exact horizontal direction or horizontal orientation is still considered as “horizontal direction” or “horizontal orientation”.
  • the carrier body 110 includes a frame having one or more frame elements.
  • the one or more frame elements include a first frame element and a second frame element, wherein the at least one support surface includes a first support surface provided by the first frame element and a second support surface provided by the second frame element.
  • the frame of the carrier body 110 includes a first frame element 111, a second frame element 113, a third frame element 112 and a fourth frame element 114.
  • the first frame element 111 provides the first support surface 121 of the supporting arrangement 120
  • the second frame element 113 provides the second support surface 121 ' of the supporting arrangement 120.
  • the first frame element 111 and the second frame element 113 can be oriented substantially parallel, and/or the third frame element 112 and the fourth frame element 114 can be oriented substantially parallel.
  • the first frame element 111 and the second frame element 113 extend substantially parallel in the horizontal direction, particularly wherein the horizontal direction is substantially perpendicular to the force of gravity.
  • the first frame element 111 and the second frame element 113 can be referred to as top bar and bottom bar, respectively.
  • the third frame element 112 and the fourth frame element 114 can be referred to as side bars.
  • the at least one substrate supporting arrangement is configured for supporting e.g. a large area substrate 101.
  • the at least one support surface 121 can be configured to be in contact with a perimeter portion of the substrate 101.
  • the at least one substrate support surface 121 may also be referred to as "substrate receiving surface”.
  • the carrier body is configured to support the substrate in a vertical orientation.
  • the carriers described herein and the apparatuses for utilizing the carriers described herein are for vertical substrate processing.
  • the term “vertical substrate processing” is understood to distinguish over “horizontal substrate processing”. That is, vertical substrate processing relates to a substantially vertical orientation of the carrier and the substrate during substrate processing, wherein a deviation of a few degrees, e.g. up to 10° or even up to 15°, from an exact vertical orientation is still considered as vertical substrate processing.
  • the carrier body has an aperture opening configured to accommodate the substrate.
  • the one or more frame elements of the frame form the aperture opening, e.g., aperture opening 115, configured to accommodate the substrate 101.
  • the aperture opening 115 may also be referred to as "window".
  • the carrier body is made of metal or plastic.
  • the frame having the one or more frame elements can be made of metal or plastic.
  • the carrier body 110 can be made of aluminum, aluminum alloys, titanium, alloys thereof, stainless steel or the like. E.g. for small large area substrates, e.g. GEN 5 or below, the carrier body 110 can be manufactured from a single piece, i.e. the carrier body 110 can be integrally formed.
  • the carrier body 110 can include two or more single elements such as the frame elements, e.g., a top bar, sidebars and a bottom bar.
  • the carriers according to the embodiments described herein can be utilized for PVD deposition processes, CVD deposition processes, substrate structuring edging, heating (e.g. annealing) or any kind of substrate processing.
  • Embodiments of carriers as described herein and methods for utilizing such carriers are particularly useful for non-stationary, i.e. continuous substrate processing.
  • the carriers can be provided for processing vertically oriented large area glass substrates.
  • Non- Stationary processing typically requires that the carrier also provides masking elements for the process.
  • the carrier according to embodiments described herein can also mask the substrate.
  • the aperture opening in the carrier body or frame can provide an aperture for coating material to be deposited on the exposed substrate portion or an aperture for other processing steps acting on the substrate portion, which is exposed by the aperture.
  • a masking device can be provided that is configured for masking portions of the substrate so that the coating material can be deposited only on substrate portions exposed by the mask device.
  • the masking can be provided by a separate edge exclusion mask, which can be provided in the processing chamber.
  • Figure 2A illustrates a perspective view of a carrier 200 according to further embodiments described herein, and figure 2B illustrates a top view of the carrier 200 of figure 2A supporting the substrate 101.
  • the carrier 200 of figures 2A and 2B is similar to the carrier 100 described above with reference to figures 1A and IB, the difference being the configuration of the at least one substrate supporting arrangement.
  • the above given descriptions of similar of identical features also apply to the embodiment of figures 2A and 2B and are not repeated.
  • the substrate supporting arrangement includes two or more holding devices, the two or more holding devices are arranged to hold the substrate at a first distance from the linear transportation path at a first position and at a second distance from the linear transportation path at a second position, wherein the first distance is greater than the second distance.
  • the substrate supporting arrangement includes the two or more holding devices, wherein the two or more holding devices are arranged to hold the substrate 101 at the first distance from the carrier body 110 or frame at the first position and at the second distance from the carrier body 110 or frame at the second position, wherein the first distance is greater than the second distance.
  • the one or more holding devices are configured for fixing the substrate 101 to the carrier body 110 or frame and holding it in place e.g. during the deposition process.
  • the linear transportation path 133 is essentially parallel to the first direction 132, wherein the first direction 132 may be the horizontal direction.
  • two or more holding devices are provided, e.g., two first holding devices 210 and a second holding device 220.
  • the first holding devices 210 are arranged to hold the substrate 101 at the first distance from the linear transportation path 133 at the first position.
  • the first holding devices 210 are arranged to hold the substrate 101 at the first distance from the carrier body 110 or frame at the first position.
  • the second holding device 220 is arranged to hold the substrate 101 at the second distance from the linear transportation path 133 at the second position, wherein the first distance is greater than the second distance.
  • the second holding device 220 is arranged to hold the substrate 101 at the second distance from the carrier body 110 or frame at the second position.
  • the two or more holding devices can be configured to apply a circular shape or a wavelike shape to the substrate 101, particularly a convex or concave shape.
  • At least one of the two or more holding devices 210, 220 includes a distance element, such as distance elements 211 and 221, providing the first distance or the second distance from the linear transportation path 133, and a holding element, such as holding elements 212 and 222, configured for contacting and/or holding the substrate 101.
  • the two or more holding devices may include a hanging or mounting suspension for holding the substrate 101 in a hanging or suspended position.
  • the holding element of the holding device can be configured for holding the substrate 101 in the hanging or suspended position.
  • the one or more holding devices are configured to hold the substrate by applying a holding force to extended surfaces of the substrate 101, e.g., on the extended surface to be coated.
  • a clamp contacts both extended surfaces to hold or clamp the substrate 101.
  • holding devices 210 and 220 are shown in figures 2A and 2B, the present disclosure is not limited thereto. More than three holding devices could be provided. As an example, more than one holding device could be provided at at least one of the first frame element 111, the second frame element 113, the third frame element 112 and/or the fourth frame element 114.
  • Figure 3A illustrates a perspective view of a carrier 300 according to further embodiments described herein, and figure 3B illustrates a top view of the carrier 300 of figure 3 A supporting the substrate 101.
  • the carrier 300 of figures 3A and 3B is similar to the carrier 100 described above with reference to figures 1A and IB, the difference being that one or more holding devices 310 are provided and the substrate supporting arrangement 320 is configured to apply a convex shape to the substrate 101.
  • the above given descriptions of similar of identical features also apply to the embodiment of figures 3 A and 3B and are not repeated.
  • the one or more holding devices 310 can be configured similarly or identical to the holding devices described above with reference to figures 2A and 2B.
  • the one or more holding devices 310 can be configured to hold the substrate 101 at the at least one support surface, such as the first support surface 321 and the second support surface 321 ', having the curvature for defining or providing the at least one bending axis 130 for the substrate 101, particularly wherein the curvature is a convex curvature.
  • the one or more holding devices 310 are configured to hold the substrate 101 by applying a holding force to an extended surfaces of the substrate 101, e.g., on the extended surface to be coated.
  • a clamp contacts both extended surfaces to hold or clamp the substrate 101.
  • FIG. 3A and 3B Although four holding devices are shown in figures 3A and 3B, the present disclosure is not limited thereto. More than four holding devices could be provided. As an example, more than one holding device 310 could be provided at at least one of the first frame element 111, the second frame element 113, the third frame element 112 and/or the fourth frame element 114.
  • Figure 4A illustrates a perspective view of a carrier 400 according to further embodiments described herein, and figure 4B illustrates a top view of the carrier 400 of figure 4A supporting the substrate 101.
  • the substrate supporting arrangement includes or is a plate 410, e.g., a bended plate.
  • the plate can have the support surface, e.g. support surface 411.
  • the plate 410 can have a cylindrical shape, particularly wherein the plate 410 is a segment of a cylinder.
  • the cylinder may have a radius. The radius may be constant to define a segment of the cylinder.
  • Other shapes of the plate 410 are possible, e.g., a wavelike shape, particularly a sinusoidal shape.
  • the plate may be convexly or concavely shaped.
  • the substrate supporting arrangement includes the two or more holding devices, the two or more holding devices are arranged to hold the substrate at the first distance from the linear transportation path at the first position and at the second distance from the linear transportation path at the second position, wherein the first distance is greater than the second distance.
  • the two or more holding devices include at least one electrode configured for generating an electric field, particularly an electrostatic field.
  • the at least one electrode can be configured for holding the substrate 101 at the support surface 411, e.g., electrostatically.
  • at least one electrode 412 can be embedded in the plate 410 or may be provided at a side of the plate 410 opposite the support surface 411.
  • the substrate supporting arrangement, and particularly the two or more holding devices can be configured as a chuck.
  • Figures 5A and 5B illustrate top views of carriers according to embodiments described herein.
  • a configuration of the substrate supporting arrangement having the at least one support surface with the curvature is shown.
  • a configuration of the substrate supporting arrangement having the two or more holding devices is shown.
  • the carrier body 110 may have one or more contact surfaces configured for contacting the substrate 101.
  • the carrier body 110, and particularly the frame of the carrier body 110 may have one or more rounded edges that provide the contact surfaces.
  • the third frame element 112 and the fourth frame element 114 can each have a contact surface, e.g., provided by rounded edges of the third frame element 112 and the fourth frame element 114.
  • Figures 6 A, 6B and 6C illustrate top views of carriers according to embodiments described herein.
  • the substrate supporting arrangement is configured to define two or more bending axes for the substrate for applying a wavelike shape to the substrate, particularly a sinusoidal shape.
  • the curvature of the support surface 421 of the substrate supporting arrangement 420 has a wavelike shape, particularly a sinusoidal shape.
  • the curvature of the support surface 421 of the substrate supporting arrangement 420 provides or defines two or more bending axes 422 for the substrate 101. By the two or more bending axis 422, a wavelike shape can be applied to the substrate 101, particularly a sinusoidal shape.
  • two or more holding devices 440, 441 are provided.
  • the two or more holding devices 440, 441 are arranged to hold the substrate 101 at the first distance from the linear transportation path at the first position and at the second distance from the linear transportation path at the second position, wherein the first distance is greater than the second distance.
  • two or more first holding devices 440 are provided to hold the substrate 101 at the first distance from the linear transportation path at the first position, and particularly at the first distance from the carrier body or frame, e.g., the first frame element 111.
  • Two or more second holding devices 441 are provided to hold the substrate 101 at the second distance from the linear transportation path at the second position, and particularly at a second distance from the carrier body or frame, e.g., the first frame element 111.
  • a wavelike shape can be applied to the substrate 101, particularly a sinusoidal shape.
  • Figure 7 shows a view of an apparatus 500 for depositing a layer of material on the substrate 101 utilizing a carrier 510 according to embodiments described herein.
  • the apparatus 500 includes a vacuum processing chamber 512 having a linear transportation path and adapted for layer deposition therein, the carrier 510 within the processing chamber 512, and a deposition source 530 for depositing material forming the layer.
  • the carrier 510 is configured according to embodiments described herein.
  • the carrier 510 may e.g. be configured as anyone of the carriers described above with reference to figures 1 to 6.
  • the processing chamber 512 is adapted for a deposition process, such as a PVD or CVD process.
  • the substrate 101 is shown being located within or at the carrier 510 on a substrate transport device 520.
  • the deposition source 530 is provided in a chamber facing the side of the substrate 101 to be coated.
  • the deposition source 530 provides deposition material to be deposited on the substrate 101.
  • the deposition source 530 may be a target with deposition material thereon or any other arrangement allowing material to be released for deposition on the substrate 101.
  • the deposition source 530 may be a rotatable target. According to some embodiments, the deposition source 530 may be movable in order to position and/or replace the source. According to other embodiments, the deposition source 530 may be a planar target.
  • the deposition source 530 may be or include a cathode array.
  • the cathode array may include a plurality of material source devices.
  • the plurality of material source devices of the cathode array can be arranged with respect to the substrate 101 so as to have different distances to the substrate 101.
  • the material source devices of the cathode array can be arranged along a bended or curved line.
  • the plurality of material source devices can be positioned on a substantially straight line, wherein the bending axis of the carrier 510 is configured to apply a bending to the substrate 101 so that the material source devices of the cathode array are arranged at different distances to the substrate.
  • the material source devices of an end section of the cathode array can be arranged closer to the substrate than the material source devices of a center section of the cathode array, and a uniformity of the coated layers can be increased.
  • the deposition material may be chosen according to the deposition process and the later application of the substrate 101.
  • the deposition material of the deposition source 530 may be a material selected from the group consisting of: a metal, such as aluminum, molybdenum, titanium, copper, or the like, silicon, indium tin oxide, and other transparent conductive oxides.
  • Oxide-, nitride- or carbide-layers which can include such materials, can be deposited by providing the material from the deposition source 530 or by reactive deposition, i.e. the material from the deposition source 530 reacts with elements like oxygen, nitride, or carbon from a processing gas.
  • thin film transistor materials like siliconoxides, siliconoxynitrides, siliconnitrides, aluminumoxide, aluminumoxynitrides may be used as deposition material.
  • the substrate 101 is provided within or at the carrier 510, which can also serve as an edge exclusion mask, particularly for non-stationary deposition processes. Dashed lines 565 show exemplarily the path of the deposition material during operation of apparatus 500. According to other embodiments, which can be combined with other embodiments described herein, the masking can be provided by a separate edge exclusion mask, which is provided in the chamber 512.
  • the carrier according to embodiments described herein can be beneficial for stationary processes and also for non- stationary processes.
  • Figure 8 shows a flow chart of a method 800 for supporting a substrate in a vacuum processing chamber according to embodiments described herein. The method can include positioning the substrate at at least one support supporting arrangement (block 810), and bending the substrate about at least one bending axis, wherein the at least one bending axis has an essentially vertical orientation (block 820).
  • the method for supporting a substrate in a vacuum processing chamber can be conducted by means of computer programs, software, computer software products and the interrelated controllers, which can have a CPU, a memory, a user interface, and input and output means being in communication with the corresponding components of the apparatus for processing a large area substrate.
  • Embodiments can provide a stabilization of the substrate or the substrate positioning, particularly in light of the fact that the substrates are getting bigger in length and height, however, the thickness of the substrates decreases.

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Physical Vapour Deposition (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

L'invention concerne un support (100) pour supporter un substrat dans une chambre de traitement sous vide ayant un trajet de transport linéaire. Le support (100) comprend un corps de support (110) configuré pour le transport le long du trajet de transport linéaire (133), et au moins un agencement de support de substrat (120) placé au niveau du corps de support (110) et configuré pour supporter le substrat (101), dans lequel l'agencement de support de substrat (120) est configuré pour définir au moins un axe de flexion (130) pour le substrat (101), lequel ou lesquels axes de flexion (130) ont une orientation essentiellement verticale.
PCT/EP2014/061280 2014-05-30 2014-05-30 Support et procédé pour supporter un substrat dans une chambre de traitement sous vide WO2015180798A1 (fr)

Priority Applications (4)

Application Number Priority Date Filing Date Title
PCT/EP2014/061280 WO2015180798A1 (fr) 2014-05-30 2014-05-30 Support et procédé pour supporter un substrat dans une chambre de traitement sous vide
CN201490001478.XU CN206927946U (zh) 2014-05-30 2014-05-30 用于在真空处理腔室中支撑基板的载体和用于在基板上沉积层的设备
KR2020167000065U KR20170000465U (ko) 2014-05-30 2014-05-30 진공 프로세싱 챔버에서 기판을 지지하기 위한 캐리어
TW104117013A TW201607906A (zh) 2014-05-30 2015-05-27 載體、使用其之設備及用以在真空製程腔室中支撐基板的方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/EP2014/061280 WO2015180798A1 (fr) 2014-05-30 2014-05-30 Support et procédé pour supporter un substrat dans une chambre de traitement sous vide

Publications (1)

Publication Number Publication Date
WO2015180798A1 true WO2015180798A1 (fr) 2015-12-03

Family

ID=50928080

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2014/061280 WO2015180798A1 (fr) 2014-05-30 2014-05-30 Support et procédé pour supporter un substrat dans une chambre de traitement sous vide

Country Status (4)

Country Link
KR (1) KR20170000465U (fr)
CN (1) CN206927946U (fr)
TW (1) TW201607906A (fr)
WO (1) WO2015180798A1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2018125635A1 (fr) * 2016-12-30 2018-07-05 Sunpower Corporation Courbage de tranches semiconductrices

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102013066B1 (ko) * 2018-04-05 2019-08-21 최병수 인쇄회로기판 적재장치
CN108893721A (zh) * 2018-09-26 2018-11-27 光驰科技(上海)有限公司 一种通用多面体溅射镀膜装置及其设计方法
US11255011B1 (en) * 2020-09-17 2022-02-22 United Semiconductor Japan Co., Ltd. Mask structure for deposition device, deposition device, and operation method thereof

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2020392A2 (fr) * 2007-08-03 2009-02-04 Fuji Electric Holdings Co., Ltd. Appareil pour la fabrication d'un élément stratifié à film mince
US20120100644A1 (en) * 2010-10-22 2012-04-26 Valeriy Prushinskiy Organic layer deposition apparatus, and method of manufacturing organic light-emitting display apparatus using the same
WO2013044941A1 (fr) * 2011-09-27 2013-04-04 Applied Materials, Inc. Support pour substrats de verre minces et utilisation de celui-ci
WO2013061845A1 (fr) * 2011-10-24 2013-05-02 日東電工株式会社 Procédé de fabrication de dispositifs à électroluminescence organique et appareil de fabrication
WO2013183374A1 (fr) * 2012-06-08 2013-12-12 シャープ株式会社 Dispositif de dépôt en phase vapeur

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2020392A2 (fr) * 2007-08-03 2009-02-04 Fuji Electric Holdings Co., Ltd. Appareil pour la fabrication d'un élément stratifié à film mince
US20120100644A1 (en) * 2010-10-22 2012-04-26 Valeriy Prushinskiy Organic layer deposition apparatus, and method of manufacturing organic light-emitting display apparatus using the same
WO2013044941A1 (fr) * 2011-09-27 2013-04-04 Applied Materials, Inc. Support pour substrats de verre minces et utilisation de celui-ci
WO2013061845A1 (fr) * 2011-10-24 2013-05-02 日東電工株式会社 Procédé de fabrication de dispositifs à électroluminescence organique et appareil de fabrication
WO2013183374A1 (fr) * 2012-06-08 2013-12-12 シャープ株式会社 Dispositif de dépôt en phase vapeur

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2018125635A1 (fr) * 2016-12-30 2018-07-05 Sunpower Corporation Courbage de tranches semiconductrices
US10068787B2 (en) 2016-12-30 2018-09-04 Sunpower Corporation Bowing semiconductor wafers
US10720351B2 (en) 2016-12-30 2020-07-21 Sunpower Corporation Bowing semiconductor wafers

Also Published As

Publication number Publication date
TW201607906A (zh) 2016-03-01
CN206927946U (zh) 2018-01-26
KR20170000465U (ko) 2017-02-02

Similar Documents

Publication Publication Date Title
EP2761051B1 (fr) Support pour substrats de verre minces et utilisation de celui-ci
KR102245762B1 (ko) 홀더, 홀더를 갖는 캐리어, 및 기판을 고정시키기 위한 방법
EP2971225B1 (fr) Support pour un substrat et procédé pour soutenir un substrat
WO2015180798A1 (fr) Support et procédé pour supporter un substrat dans une chambre de traitement sous vide
TWI609450B (zh) 用於基板之運送器及其之設備
EP3294921B1 (fr) Procédé et supports de maintien de substrats
KR200493207Y1 (ko) 기판을 지지하기 위한 캐리어 및 이를 위한 장치
WO2018133952A1 (fr) Support de substrats
JP2018085523A (ja) 基板用キャリア
WO2019228610A1 (fr) Support, porteur comprenant au moins deux supports, appareils et procédés
CN103814154B (zh) 薄型玻璃基板的载体及其用途

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 14729257

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

ENP Entry into the national phase

Ref document number: 20167000065

Country of ref document: KR

Kind code of ref document: U

122 Ep: pct application non-entry in european phase

Ref document number: 14729257

Country of ref document: EP

Kind code of ref document: A1