WO2022174919A1 - Support de substrat, procédé de traitement d'un substrat, et système de traitement - Google Patents

Support de substrat, procédé de traitement d'un substrat, et système de traitement Download PDF

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Publication number
WO2022174919A1
WO2022174919A1 PCT/EP2021/054170 EP2021054170W WO2022174919A1 WO 2022174919 A1 WO2022174919 A1 WO 2022174919A1 EP 2021054170 W EP2021054170 W EP 2021054170W WO 2022174919 A1 WO2022174919 A1 WO 2022174919A1
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WO
WIPO (PCT)
Prior art keywords
substrate
substrate support
front side
openings
temperature
Prior art date
Application number
PCT/EP2021/054170
Other languages
English (en)
Inventor
Simon Lau
Tobias Bergmann
Mehran Behdjat
Ming-Chun Lee
HungHui CHIANG
Original Assignee
Applied Materials, Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials, Inc. filed Critical Applied Materials, Inc.
Priority to PCT/EP2021/054170 priority Critical patent/WO2022174919A1/fr
Priority to KR1020237031464A priority patent/KR20230146074A/ko
Priority to CN202180094198.2A priority patent/CN116917533A/zh
Priority to PCT/EP2021/064831 priority patent/WO2021245154A1/fr
Priority to KR1020227038145A priority patent/KR20220163422A/ko
Priority to CN202180036943.8A priority patent/CN115885057A/zh
Publication of WO2022174919A1 publication Critical patent/WO2022174919A1/fr

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50—Substrate holders
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4586—Elements in the interior of the support, e.g. electrodes, heating or cooling devices
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • C23C16/463—Cooling of the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54—Apparatus specially adapted for continuous coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67248—Temperature monitoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/6875—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of individual support members, e.g. support posts or protrusions

Definitions

  • Embodiments of the present disclosure relate to temperature measurement of a substrate, for example, a large area substrate on an electrostatic chuck (ESC).
  • Embodiments relate to a substrate support and a method for measuring a substrate temperature, particularly in different regions of the substrate support.
  • Embodiments particularly related to a substrate support, a method of measuring a substrate temperature and a processing system for processing a substrate in a vacuum chamber.
  • Coated substrates may be used in several applications and in several technical fields.
  • substrates for displays can be coated by a PVD process, including substrates for high-density displays.
  • Some applications include insulating panels, substrates with TFTs, color filters or the like.
  • a coated substrate, such as a substrate for a display may include one or more layers of a material situated between two electrodes that are all deposited on a substrate.
  • substrates are transported through subsequent processing chambers of the processing system, such as deposition chambers and optionally further processing chambers, e.g., cleaning chambers and/or etching chambers, wherein processing aspects are subsequently conducted in the processing chambers such that a plurality of substrates can be subsequently processing in a cluster system or continuously or quasi-continuously be processed in the in-line processing system.
  • a substrate may be supported on a support such as a support table or the substrates can be loaded onto substrate supports that are transported through the processing system.
  • Substrates supported by a substrate support table or transported by a carrier to be processed in a vacuum processing system may include one or more layers of previously deposited materials.
  • a substrate including a previously processed layer is to be referred to as a substrate for the upcoming processing.
  • a layer that is provided on the substrate may be temperature sensitive. Particularly organic materials that have previously been deposited on the substrate can be damaged by temperatures of, for example, 60°C or above, 80°C or above, or 100°C or above.
  • substrate processing is beneficially conducted at a high deposition rate to reduce the tact time of the processing. Accordingly, temperature limits on the one hand and high deposition rates on the other hand provide conflicting interests.
  • a substrate support for supporting a substrate in a vacuum processing system.
  • the substrate support includes a substrate support body having a front side for supporting the substrate and a back side opposite the front side; a chuck assembly in the substrate support body or at the back side of the substrate support body, a plurality of first openings in the front side, the plurality of first openings being in fluid communication with a gas conduit; a plurality of second openings through the substrate support body configured for a plurality of lift pins supporting the substrate during loading or unloading; a plurality of first protrusions on the front side, each first protrusion surroundings at least partially a second opening of the plurality of second openings; and a plurality of second protrusions on the front side configured for a temperature measurement.
  • a method of processing a substrate in a vacuum processing system includes loading the substrate on a substrate support having a substrate support body with a front side and a chuck assembly; cooling at least a portion of the substrate loaded on the substrate support with a cooling gas to provide a cooled substrate portion; measuring a first substrate temperature in a first region within the cooled substrate portion while the substrate is loaded on the substrate support; and measuring a second substrate temperature in a second region different from the first region.
  • a processing system for processing a substrate in a vacuum chamber includes a loading station, particularly configured for horizontal substrate loading; a vacuum processing chamber; and a controller.
  • the controller includes a processor and a memory storing instructions that, when executed by the processor, cause performing a method according to any of the embodiments described herein.
  • FIG. 1 shows a schematic cross-sectional view of a substrate support according to embodiments described herein;
  • FIG. 2A shows a schematic cross-sectional view of a substrate support according to embodiments described herein;
  • FIG. 2B shows an enlarged view of portions of the substrate support of FIG. 2A according to embodiments described herein;
  • FIG. 2C shows a schematic front view of a substrate support according to embodiments described herein
  • FIG. 3A shows a schematic view of a processing system for processing a substrate according to embodiments described herein;
  • FIG. 3B shows a schematic view of a processing apparatus for processing a substrate according to embodiments described herein;
  • FIG. 3C shows a schematic view of a processing system for processing a substrate according to embodiments described herein.
  • FIG. 4 shows a flow chart of a method of measuring a temperature of a substrate, for example, in a processing system according to embodiments described herein.
  • Substrate supports can be used in a processing system, such as a vacuum deposition system, for holding and/or transporting substrates within a vacuum chamber of the processing system.
  • a substrate support can be support table, e.g. a substrate support table, or a pedestal, e.g. a substrate support pedestal provided in a processing chamber of a vacuum processing system.
  • a support table may particularly be configured for horizontal substrate processing or essentially horizontal substrate processing.
  • the processing chamber including the substrate support may be provided in a cluster system.
  • a substrate support can be a carrier, particularly a carrier within electrostatic chuck (ESC).
  • the carrier may particularly be configured for vertical substrate processing or essentially vertical substrate processing.
  • the substrate can be supported by the carrier and the carrier can move the substrate through a vacuum processing system and can support the substrate during processing of the substrate.
  • Supporting a substrate with a carrier for substrate processing has the advantage of reduced glass breakage, for example, for transporting a substrate through a processing system.
  • a substrate may be held or supported by a substrate support at a rear side i.e. the side of the substrate which does not face the deposition source.
  • the front side of the substrate i.e. the side of the substrate facing the deposition source is not covered by e.g. holding arrangements of the carrier, allowing for the material to be deposited to reach areas of the substrate being hard to reach otherwise.
  • substrate supports may include electrostatic chucks for holding the substrate at a rear side. When loading the substrate onto the substrate support, the substrate may be provided onto the electrostatic chuck until electrostatic forces are sufficiently established.
  • Embodiments of the present disclosure provide an electrostatic chuck with integrated substrate temperature measurement. For example, a closed loop control of the substrate temperature and the sputtering power may be provided.
  • the substrate having the organic layer may be sensitive to temperature increases during subsequence substrate processing operations, such as sputtering of further layers on the substrate.
  • the cooling gas for example, helium can be provided into the gap between the substrate, for example, a glass substrate, and the electrostatic chuck.
  • the substrate temperature is provided to be at 100°C or below, particularly 80°C or below.
  • the power of a sputtering process during substrate processing can be controlled to adjust the substrate temperature to the temperature limit.
  • a gas cushion for example, a helium cushion with for example about 3 to 10 mbar
  • the heat transfer between the substrate and the plate of the ESC, for example a water-cooled plate, can be improved.
  • the substrate support may include a water cooling for the substrate receiving surface.
  • an improved method of measuring the temperature according to embodiments described herein and an improved substrate support for temperature control according to embodiments described herein is beneficial. Accordingly, the sputtering power can be maximized while the temperature limits can be controlled. Accordingly, the tact time of a processing can be improved.
  • FIG. 1 shows a schematic cross-sectional view of a substrate support 100 according to embodiments described herein.
  • the substrate support may be a substrate support table.
  • the substrate support 100 is configured for supporting a substrate in a processing chamber.
  • the substrate support 100 includes a substrate support body 140 having a substrate support surface, for example, a front side 142, for supporting the substrate. Opposite the front side 142, a back side 143 is provided.
  • the substrate support includes a chuck assembly 120.
  • the chuck assembly 120 is configured to hold the substrate at the substrate support surface.
  • the chuck assembly may include an electrode assembly 125 for providing electrostatic forces to the substrate. For example, an electrostatic field may be provided by the electrode assembly 125 to act on the substrate for holding the substrate.
  • a substrate may be supported in a processing chamber or transported through a processing system while being held by the electrostatic field.
  • the substrate support 100 includes a substrate support surface, i.e. the front side 142.
  • a substrate to be carried through a processing system may be held at the substrate support surface of the substrate support.
  • the substrate may be held at the substrate support surface by electrostatic forces.
  • the substrate support may include a plurality of first openings 112 in the substrate support surface.
  • the plurality of first openings may be connected to the gas conduit 110.
  • the gas conduit may be connected to a gas supply.
  • the gas conduit may be connected to a gas source 160 for providing a cooling gas.
  • the gas source 160 can be a gas tank or a gas supply of a processing system.
  • the gas conduit may include a plurality of channels 116. Each of the channels of the plurality of channels 116 may open into one opening of the plurality of first openings 112.
  • the cooling gas can be provided between the substrate supported by the substrate support 100 and the substrate. Accordingly, the substrate temperature can be reduced during substrate processing.
  • the cooling gas can be selected from the group consisting of: helium, argon or the like.
  • the substrate support may include at least one non-conductive area.
  • the at least one non-conductive area may be made of a dielectric material.
  • the dielectric may be made of a high thermal conductivity dielectric material such as pyrolytic boron nitride, aluminum nitride, aluminum oxide, silicon nitride, alumina or an equivalent material, but may be made of such materials as polyimide.
  • the electrode assembly 125 may be embedded in the at least one non-conductive area or provided on the side of the non-conductive area opposite the substrate support surface.
  • the substrate support 100 may include one or more voltage sources configured to apply one or more voltages to the plurality of electrodes 122.
  • the one or more voltage sources are configured to ground at least some electrodes of the plurality of electrodes 122.
  • the one or more voltage sources can be configured to apply a first voltage having a first polarity, a second voltage having a second polarity, and/or ground to the plurality of electrodes 122.
  • each electrode, every second electrode, every third electrode or every fourth electrode of the plurality of electrodes can be connected to a separate voltage source.
  • polarity refers to an electric polarity, i.e., negative (-) and positive (+).
  • first polarity can be the negative polarity and the second polarity can be the positive polarity, or the first polarity can be the positive polarity and the second polarity can be the negative polarity.
  • the ESC of the substrate support can be a mono-polar or a bi polar electrostatic chuck.
  • a controller 130 can be configured to control the one or more voltage sources for applying the one or more voltages and/or ground to the electrode assembly 125.
  • the controller 130 may be configured to regulate the chuck assembly i.e. the controller may be configured to control the electrostatic chucking.
  • the controller 130 may be configured to regulate the gas source 160.
  • the controller can be configured to control or communicate with the first temperature sensor and/or to control or communicate with the second temperature sensor.
  • the controller 130 as illustrated in FIG. 1 may be separated into individual controllers for the voltage source, the gas supply, and/or the temperature sensors.
  • a first temperature sensor 150 provided at the substrate support 100 can be included in embodiments of the present disclosure. Additionally or alternatively, a second temperature sensor 155, such as an external temperature sensor can be provided. Utilization of the temperature sensor at the substrate support 100 and/or for methods of measuring a substrate temperature will be described in more detail with respect to FIG. 2A.
  • the substrate support may be oriented substantially horizontally for a cluster processing system or a wafer processing system.
  • the substrate support may be oriented substantially vertically for an in-line processing system.
  • the substrate may be transported through the processing system in a substantially vertical orientation.
  • substantially horizontal is understood particularly when referring to the substrate orientation, to allow for a deviation from the horizontal direction or orientation of ⁇ 20° or below, e.g. of ⁇ 10° or below.
  • substantially vertical is understood particularly when referring to the substrate orientation, to allow for a deviation from the vertical direction or orientation of ⁇ 20° or below, e.g. of ⁇ 10° or below. This deviation from a vertical orientation can be provided for example because a substrate support with some deviation from the vertical orientation might result in a more stable substrate position, or a facing down substrate orientation might even better reduce particles on the substrate during deposition. Yet, the substrate orientation, e.g., during a layer deposition process, is considered substantially vertical. Generally, horizontal and vertical substrate orientations can be differentiated, wherein both orientations, a horizontal orientation or a vertical orientation may include a deviation as described above.
  • vertical direction or “vertical orientation” are understood to distinguish over “horizontal direction” or “horizontal orientation”.
  • the vertical direction is substantially parallel to the force of gravity.
  • the substrate may be loaded onto the substrate support in a substantially horizontal orientation.
  • Substrate lift pins which will be described in more detail with respect to FIG. 2A, may be utilized to load or unload the substrate in a horizontal orientation of the substrate support 100.
  • a substrate hand over or transfer i.e. an unloading of a process substrate from the substrate support or a loading of a substrate to be processed onto the substrate support can be provided in an essentially horizontal position, particularly a horizontal position.
  • a lift pin assembly such as a pin array can be used.
  • FIG. 2 A shows a substrate support 100.
  • FIG. 2B shows an enlarged portion of the substrate support 100 shown in FIG. 2A.
  • the substrate support 100 includes a substrate support body 140.
  • a plurality of openings, such as first openings 212, are provided through the substrate support body 140.
  • the lift pin assembly 280 having lift pins 282 is moved up and down to lift the substrate 20 from the front side 142 of the substrate support 100.
  • FIG. 2A shows the lift pin assembly 280 in an upper position, wherein the substrate 20 is supported by the lift pins 282.
  • FIG. 2B shows the lift pin assembly 280 in a lower position, wherein the substrate 20 is supported by a support surface of the substrate support.
  • a plurality of first openings 112 is provided in the front side of the substrate support body 140.
  • the plurality of first openings 112 is connected to the gas conduit 110.
  • gas can be provided to the front side 142 of the substrate support body through the first openings 112.
  • gas provided at the front side 142 i.e. between the front side of the ESC and the substrate 20, might potentially flow through the opening 212 for a lift pin 282.
  • a protrusion 242 is provided in order to avoid cooling gas flowing through the substrate support.
  • the protrusion 242 provides a barrier or a dam for the cooling gas.
  • the protrusion or barrier can have the shape of a ring, for example, a ring surrounding one of the first openings 212.
  • the first openings are provided in the substrate support 100 to allow utilization of a pin array, bearing lift pins are guided through the ESC to support the substrate during loading or unloading.
  • the cooling gas barrier (or a cooling gas “dam”) is formed around each pin hole to keep the cooling gas, for example, helium, between the substrate and the ESC. Accordingly, no cooling in the pinhole area is provided and a hot spot is formed.
  • a substrate support surface of the substrate support body i.e. the front side of the substrate support body, includes at least two different regions.
  • a cooling gas such as helium
  • the first region is a cool region.
  • a cooling gas is prevented by the protrusion or barrier.
  • the second region is an uncooled region.
  • the uncooled region may be referred to as a hot spot.
  • the substrate supported by a substrate support 100 as described herein can include the first region with a first substrate temperature and the second region with a second substrate temperature, wherein the second substrate temperature is higher than the first substrate temperature.
  • the temperature limit can be controlled with respect to the second substrate temperature of the second region.
  • a substrate support is configured to measure the temperature in the first region, i.e. a cool region, and in the second region, i.e. a hot spot.
  • a plurality of second protrusions on the front side of the substrate support body can be provided.
  • the plurality of second protrusions are configured for a temperature measurement.
  • FIG. 2B shows an exemplary protrusion 244.
  • the protrusion 244 surrounds a surface 246 at which a temperature sensor, such as a first temperature sensor 150, is provided.
  • a temperature sensor such as a first temperature sensor 150
  • an exemplary protrusion 244 may surround the surface 245 of the substrate support body.
  • the temperature of the surface 245 surrounded by the protrusion 244 can, for example, be measured with a radiation temperature sensor, such as an infrared temperature sensor.
  • a plurality of second protrusions are provided on the front side of a substrate support body to generate a region corresponding to a hotspot of a substrate 20. Accordingly, a temperature can be measured at the first region, i.e. a cooled region, and at a second region, i.e. a hot spot region.
  • a substrate support for supporting a substrate in a vacuum processing system includes a substrate support body having a front side for supporting the substrate and a back side opposite the front side and a chuck assembly in the substrate support body or at the back side of the substrate support body. Further, a plurality of first openings in the front side is provided, wherein the plurality of first openings are in fluid communication with a gas conduit. A plurality of second openings through the substrate support body is provided, wherein the plurality of second openings is configured for a plurality of lift pins supporting the substrate during loading or unloading.
  • a plurality of first protrusions are provided on the front side, each first protrusion surrounding at least partially a second opening of the plurality of second openings.
  • the substrate support further includes a plurality of second protrusions on the front side configured for a temperature measurement.
  • the plurality of first protrusions can be configured to provide a barrier for a cooling gas.
  • FIG. 2C shows a schematic front view of a substrate support 100.
  • a measurement grid of temperature measurement regions is shown.
  • a plurality of first regions 286 having a first temperature measurement is provided.
  • the plurality of first regions is cooled with the cooling gas.
  • no barrier for the cooling gas is provided at the first regions.
  • a first region, which is cooled with a cooling gas can be measured with a temperature sensor.
  • the temperature sensor can be provided within or at the substrate support 100, particularly between the front side 142 and the substrate 20, as exemplarily illustrated by first temperature sensor 150.
  • a temperature sensor can be provided separate from the substrate support, as exemplarily illustrated by a second temperature sensor 155 shown in FIG. 1.
  • a temperature sensor can be a thermocouple or an infrared temperature sensor.
  • FIG. 2C further shows protrusions 242 surrounding an opening 212 configured for the lift pin 282.
  • second regions 284 having a second temperature measurement are provided on the surface of the substrate support.
  • the second regions can be distributed over the area of the substrate receiving surface of the substrate support 100.
  • the second area includes a protrusion 244, for example, a barrier for the cooling gas. Accordingly, temperature measurement at a hotspot on the substrate 20 can be provided.
  • a temperature sensor 150 can be provided within the substrate support body of the substrate support.
  • the temperature sensor can be a thermocouple.
  • the thermocouple may be movably supported within a recess of the substrate support body and may be spring-loaded.
  • a substrate support without a substrate may have the surface of the thermocouple protruding from the front side 142 of the substrate support body.
  • the thermocouple may protrude from the surface by the force provided by the spring or another elastic element.
  • the substrate counteracts the force of the spring or the elastic element and pushes the thermocouple into the recess of the substrate support body. Accordingly, a good thermal contact between the temperature sensor and the substrate can be provided.
  • the substrate support or the substrate support body includes a plurality of first openings.
  • the plurality of first opening is in fluid communication with a gas conduit for a cooling gas.
  • the substrate support or the substrate support body further includes a plurality of second openings.
  • the plurality of second openings are configured for pins of a lift pin array.
  • the substrate support or the substrate support body further includes a plurality of third openings or recesses for receiving temperature sensors and a plurality of fourth openings or further recesses for receiving temperature sensors.
  • the plurality of second openings are provided with protrusions or barriers for the cooling gas as described herein and the plurality of third openings (or the recesses) are provided with protrusions or barriers for the cooling gas as described herein.
  • the plurality of fourth openings may be provided without a barrier for the cooling gas. Accordingly, a first group of temperature sensors can measure a substrate temperature at substrate locations with a cooling gas barrier and a second group of temperature sensors can measure a substrate temperature at substrate locations without a cooling gas barrier.
  • embodiments of the present disclosure include a plurality of first protrusions on the front side, wherein the plurality of first protrusions correlate with openings for a lift pin array.
  • at least one second protrusion of the plurality of second protrusions surrounds at least partially a portion of the surface of the front side.
  • at least one second protrusion of the plurality of second protrusions may surround or at least partially surround a temperature sensor, for example a thermocouple.
  • the at least one second protrusion is configured to provide a barrier for a cooling gas.
  • the protrusion or barrier may include an area, for example, a ring-shaped area that protrudes by 0.5/10 mm or more 5/10 mm or less from the substrate receiving surface of the front side of the substrate support body.
  • FIG. 3A shows a substrate processing system 300.
  • the substrate processing system 300 can be a cluster system having a transfer chamber 320.
  • the transfer chamber 320 can be a central transfer chamber.
  • a robot 322 can at least be partially disposed within the transfer chamber 320.
  • the robot 322 can have a robot arm 354.
  • the robot 322 can transfer substrates between the chambers coupled to the transfer chamber 320.
  • At least one load lock chamber 305 can be coupled to the transfer chamber 320.
  • FIG. 3 A shows two load lock chambers 305 coupled to the transfer chamber 320.
  • One or more vacuum processing chambers 310 can be coupled to the transfer chamber 320.
  • the robot 322 can transfer the substrate between a load lock chamber and a deposition chamber and vice versa or between different deposition chambers attached to the transfer chamber 320.
  • a deposition apparatus or a processing chamber 310 includes a vacuum chamber. Further, the transfer chamber 320 can be a vacuum transfer chamber. Accordingly, a substrate can be handled under vacuum from load lock chamber to the transfer chamber, from the transfer chamber two vacuum chamber of a deposition apparatus and from vacuum chamber of first deposition apparatus to a vacuum chamber to a further deposition apparatus.
  • the apparatuses and systems described herein are configured in order to move and process large area substrates that may in particular have a surface of 1 m 2 or above.
  • substrate may particularly embrace substrates like glass substrates, for example, a glass plate.
  • a substrate may include wafers, slices of transparent crystal such as sapphire or the like.
  • substrate may embrace other substrates that can be inflexible or flexible, like e.g. a foil or a web.
  • the substrate may be formed by any material suitable for material deposition.
  • FIG. 3 A schematically shows a substrate processing system 300 including one or more vacuum processing chambers 310 according to the present disclosure.
  • the one or more vacuum processing chambers 310 are intended for the deposition of material on a substrate and include a vacuum chamber and/or a sputter source area according to embodiments of the present disclosure.
  • An array of deposition sources configured to deposit material on the substrate at a processing area in a horizontal orientation can be provided.
  • the substrate processing system 300 further includes a transfer chamber 320, particularly a vacuum transfer chamber coupled to the one or more deposition apparatuses.
  • FIG. 3A further shows load lock chambers 305.
  • the vacuum transfer chamber 320 is coupled to the one or more deposition apparatuses.
  • the vacuum transfer chamber can move substrates to the one or more vacuum chambers through openings, particularly horizontal slit openings.
  • the load lock chambers 305 that are configured to receive a substrate under atmospheric pressure or not under vacuum conditions A and then to transfer the substrate into the vacuum transfer chamber under vacuum conditions V.
  • the load chamber may also receive a substrate from the transfer chamber under a vacuum condition V and provide said substrate under atmospheric pressure or not under vacuum conditions A.
  • one or more further processing chambers may be coupled to the vacuum transfer chamber, for example, a central transfer chamber.
  • the one or more further processing chambers may be selected from a heating chamber coupled to the transfer chamber, a cooling chamber coupled to the transfer chamber, a pre-cleaning chamber coupled to the transfer chamber, a storage chamber coupled to the transfer chamber, an examination chamber coupled to the transfer chamber, and a CVD chamber coupled to the transfer chamber.
  • One or more of the above chambers, of the same type and/or different type may be coupled to a central transfer chamber.
  • the examination chamber may, for example, measure the thickness of a layer deposited in a previous deposition process or may control one or more layer thicknesses before the substrate is unloaded from a processing system. A control of layer thickness can be provided.
  • the cleaning or precleaning chamber may remove oxides from, for example, metal layers, or may remove photoresist residuals from a previous manufacturing step.
  • FIG. 3B shows a deposition apparatus.
  • the deposition apparatus includes a vacuum chamber 311.
  • the vacuum chamber 311 can include various segments.
  • the segments can be defined by the functionality of the segments, i.e. some segments or portion of the segment and an adjacent segment may be fixedly connected or integrally formed. Separating the vacuum chamber into segments allows for reduced cost of ownership.
  • the vacuum chamber 311 as exemplarily shown in FIG. 3B includes a source frame segment 312.
  • the source frame segment can be that is a fixed segment that is at a fixed position relative to the processing system, for example, relative to the central transfer chamber.
  • the source frame segment is configured to support the source assembly and/or a source support assembly, respectively.
  • a plurality of sputter cathode 350 and a plurality of anodes 352 are provided in the source frame segment.
  • another source such as an evaporation source, a spraying source, or a CVD source may be coupled to the source frame segment.
  • An upper lid assembly3 is provided over the source frame segment 312.
  • the upper lid assembly 314 can be removed from the source frame segment, for example, for maintaining components disposed in the upper lid assembly and/or for maintaining components of the source assembly or the source support assembly.
  • a substrate handling segment 316 is provided below the source frame segment.
  • the substrate handling segment 316 includes or houses components for substrate handling, substrate alignment, substrate masking, substrate support, or the like.
  • the substrate support 100 can be a substrate support table and can be provided according to any of the embodiments of the present disclosure.
  • the vacuum chamber 210 can be supported by a pedestal 318.
  • the pedestal 318 can include three or more stands. Particularly, the pedestal may support at least the source frame segment 312.
  • a deposition apparatus or a vacuum processing chamber for large area substrate processing in a cluster processing system includes a vacuum chamber.
  • the deposition apparatus includes a source support assembly.
  • the source support assembly includes a first group of cathode drive units, each cathode drive unit of the first group of cathode drive units configured to rotate a horizontal cylindrical sputter cathode, and a second group of cathode drive units, each cathode drive unit of the second group of cathode drive units configured to rotate a horizontal cylindrical sputter cathode, the first group of cathode drive units and the second group of cathode drive units being coupled to the source frame segment of the vacuum chamber.
  • the deposition apparatus further includes a substrate support lOOwithin the substrate handling segment and an actuator coupled to the substrate support to vertically move the substrate support and a pin array relative to each other.
  • FIG. 3B shows the substrate support 100 and the actuator 322 coupled to the substrate support 100.
  • the actuator 322 can be a linear actuator or drive configured to move the substrate support 100 vertically.
  • FIG. 3B shows the substrate support 100 in a first position below the upper ends of the substrate support pins or lift pins 282.
  • the actuator 322 may move the support 100, to a second position, i.e. an upper position, wherein the substrate support is positioned above the upper ends of the substrate support pins.
  • the substrate disposed on the substrate support pins 282 will be contacted by the substrate support upon movement of the substrate support from the first position to the second position.
  • the substrate can be disposed on the substrate support for material deposition by lifting the substrate support from the first position to the second position.
  • the substrate can be disposed on the substrate support pins or lift pins 282, for example, after deposition, by lowering the substrate support holding the substrate from the second position to the first position.
  • the substrate support 100 acts as a table to support the substrate during deposition of material layer on the substrate. If the table is moved to the upper position, i.e. the second position, the substrate can be disposed below the edge exclusion mask 330.
  • the substrate support shown in FIG. 3B is a substrate support according to embodiments of the present disclosure.
  • the substrate support may include an electrostatic chuck.
  • a substrate support for supporting a substrate in a vacuum processing system, for example, a substrate support table.
  • the substrate support includes a substrate support body having a front side for supporting the substrate and a back side opposite the front side.
  • a chuck assembly is provided in the substrate support body or at the back side of the substrate support body.
  • the substrate support includes a plurality of first openings in the front side, the plurality of first openings being in fluid communication with a gas conduit, and a plurality of second openings through the substrate support body configured for a plurality of lift pins supporting the substrate during loading or unloading.
  • the substrate support includes a plurality of first protrusions on the front side, each first protrusion surroundings at least partially a second opening of the plurality of second openings; and a plurality of second protrusions on the front side configured for a temperature measurement.
  • the substrate support may further include at least one of: a plurality of third openings or a plurality recesses, each third opening or recess being at least partially surrounded by a second protrusion of the plurality of second protrusions and being configured to each receive a first temperature sensor, and a plurality of fourth openings or a plurality of further recesses being configured for receiving a second temperature sensor.
  • the processing system may be a material deposition system.
  • the processing system includes a loading station 372, a vacuum processing chamber 390, and a load lock chamber 380 between the loading station and the vacuum processing chamber.
  • the loading station is configured for horizontal loading of the substrate, e.g. with a lift pin array, on a carrier according to embodiments described herein.
  • the loading station 372 may be an atmospheric chamber 370 i.e. a chamber where atmospheric pressure is provided.
  • the processing system may further include one or more transfer chambers 382.
  • Processing of a substrate may be understood as transferring material to a substrate, etching a substrate, pre-treatment of a substrate, heating the substrate, e.g. during annealing, or another substrate processing.
  • deposition material may be deposited on the substrate, for example, by a CVD process or a PVD process, such as sputtering or evaporation.
  • the substrate 10 may include a deposition material receiving side.
  • the deposition material receiving side of the substrate may be regarded as the side of the substrate facing a deposition source.
  • processing of a substrate may also include transportation of the substrate from one chamber to another chamber of the processing system.
  • the processing system 300 as shown in FIGS 3 A to 3C may be configured for CVD or PVD processes, such as sputter deposition.
  • the system can be configured for evaporation of e.g. an organic material for the manufacture of OLED devices.
  • the processing system may be a processing system for large area substrates, e.g., for display manufacturing.
  • the processing systems for which the structures and methods according to embodiments described herein are provided are for processing large area substrates having, for example, an area of 1 m 2 or larger.
  • a large area substrate can be GEN 5, which corresponds to a surface area of about 1.4 m 2 (1.1 m x 1.3 m), GEN 7.5, which corresponds to a surface area of about 4.29 m 2 (1.95 m x 2.2 m), GEN 8.5, which corresponds to a surface area of about 5.7 m 2 (2.2 m x 2.5 m), or even GEN 10, which corresponds to a surface area of about 8.7 m 2 (2.85 m x 3.05 m). Even larger generations such as GEN 11 and GEN 12 and corresponding surface areas can similarly be implemented.
  • the processing system 300 is configured for all applications, for example, for touchscreen panels (TSP).
  • the processing system i.e. the vacuum processing chamber may include one or more material deposition sources 392.
  • the one or more material deposition sources may be sources for sputter deposition or evaporation of one or more materials on a substrate.
  • the one or more material deposition sources 392 can be controlled by a controller 350. Particularly a sputtering power or another power relating to a deposition rate of a material deposition source may be adjusted by the controller 350.
  • the controller 350 can further be connected to a temperature sensor at a carrier supporting the processed substrate and/or a temperature sensor of a carrier supporting the processed substrate. Accordingly, the deposition rate and a corresponding heat load on the substrate can be adjusted based on the temperature measurement and particularly a temperature measurement in a first region being a cooled region and the second region being a hotspot region.
  • a processing system may process the substrate under vacuum conditions.
  • Vacuum conditions as used herein include pressure conditions in the range of below 10 1 mbar or below 10 3 mbar, such as 10 7 mbar to 10 2 mbar. Vacuum conditions may be applied through the use of vacuum pumps or other vacuum creating techniques.
  • vacuum conditions in the load lock chamber may be switched between atmospheric pressure conditions and subatmospheric pressure conditions, e.g. in a range at or below 10 1 mbar.
  • the substrate For transferring a substrate into a high vacuum chamber, the substrate may be inserted into the load lock chamber provided at atmospheric pressure, the load lock chamber may be sealed, and subsequently may be set at a subatmospheric pressure in the range below 10 1 mbar. Subsequently, an opening between the load lock chamber and the high vacuum chamber may be opened, and the substrate may be inserted into the high vacuum chamber to be transported into the processing chamber.
  • the substrate processing system may include a transport system 385.
  • the transport system may be configured to transport one or more carriers.
  • the one or more carriers may be configured for transporting one or more substrates 10.
  • the transport system 385 may include transportation paths extending through the processing system.
  • the one or more carriers may be transported through the processing system with or without having loaded one of the one or more substrates 10.
  • the transport system may include a magnetic levitation transport system and/or a mechanical transport system.
  • the processing system may include a carrier including a chuck assembly as described with respect to FIGS. 1, 2A, 2B and 2C.
  • the chuck assembly may hold the substrate and is configured for an in-situ temperature measurement of the substrate, particularly in the first region being a cooled region and a second region being a hot spot region.
  • a substrate temperature measurement allows to adjust the deposition power depending on the substrate temperature.
  • a fixed value for the deposition power for example, the sputtering power can be provided.
  • the substrate temperature is measured and/or monitored to obtain the highest power setting while keeping the substrate below a predetermined temperature limit, for example, 100°C or below, particularly 80°C or below.
  • a real-time power control for example, a real-time sputter power control can be provided.
  • the processing time can be reduced and, thus, the tact time can be reduced.
  • a closed loop control can be provided as exemplarily shown by the controller 350 shown in FIG. 3C.
  • a controller 350 and embodiments described herein relating to the controller may similarly be provided for a substrate processing system shown in FIGS. 3A and 3B.
  • the sputtering power can be adjusted based on the present substrate temperature or one of the substrate temperatures measured. Accordingly, if the hottest substrate region is below the predetermined temperature limit, the sputtering power can be increased. If the hottest substrate region starts to be above the predetermined temperature limit, the sputtering power can be reduced.
  • Embodiments of the present disclosure allow for a temperature measurement, particularly in a cooled region and a hot spot region without disturbing the cooling.
  • a more accurate temperature control can be provided.
  • the ESC is provided with a temperature sensor. Accordingly, substrate measurement can be provided for each substrate loaded on the ESC e.g. without breaking vacuum. Yet further, the cooling efficiency of the cooling gas, for example helium, is maintained.
  • the process recipe can be adapted according to the measured values.
  • FIG. 4 shows a flow chart of a method 400 of processing a substrate in a vacuum processing system according to embodiments described herein.
  • the method 400 includes in box 410 loading the substrate on a substrate support having a substrate support body with a front side and a chuck assembly. At operation 420, at least a portion of the substrate loaded on the substrate support is cooled with a cooling gas to provide a cooled substrate portion.
  • the method further includes in box 430 measuring a first substrate temperature in a first region within the cooled substrate portion while the substrate is loaded on the substrate support and, in box 440 measuring a second substrate temperature in a second region different from the first region.
  • the second region is an uncooled region.
  • the second region is at least partially surrounded, particularly fully surrounded by a protrusion on the front side of the substrate support body.
  • the protrusion forms a barrier for the cooling fluid, for example, a He dam.
  • the cooling of the substrate can include flowing a cooling gas through a plurality of first openings in the front side of the substrate support body of the substrate support.
  • the cooled portions of the substrates are external to the barrier formed by the protrusions and surrounding, for example, an opening to the substrate support body for a pin array for loading or unloading of a substrate on a substrate support substrate support of the substrate support, such as an ESC.
  • a layer is deposited on the substrate. For deposition, deposition power can be provided.
  • the layer can be sputtered on the substrate with a sputtering power, such as an adjustable sputtering power.
  • the deposition power for example, the sputtering power can be based on least one of the first substrate temperature and the second substrate temperature.
  • the sputtering power or deposition power can be based on the higher temperature of the first temperature and the second temperature. Since the second temperature is in an un-cooled region of the substrate, the second temperature is typically higher than the first temperature.
  • the method of processing a substrate can be provided with a substrate support according to embodiments of the present disclosure.
  • the method may further include supporting the substrate support and the substrate in a processing chamber, such as a processing system 300 shown in FIGS. 3A, 3B, and 3C.
  • the substrate support may carry the substrate for processing the substrate in a processing chamber.
  • the method may further include unloading the substrate from the substrate support. Unloading of the substrate may include pushing the substrate away from the substrate support by the operation of a pin array, for example, in a horizontal orientation of the substrate support.
  • the rear side of the substrate may be the side of the substrate facing the substrate support surface.
  • a vacuum processing system may include a controller 350 as exemplarily shown in FIG. 3C.
  • the controller 350 can be connected to one or more deposition sources and to one or more temperature sensors of the substrate support.
  • the controller 350 comprises a central processing unit (CPU), a memory and, for example, support circuits.
  • the CPU may be one of any form of general- purpose computer processor that can be used in an industrial setting for controlling various chambers and sub-processors.
  • the memory is coupled to the CPU.
  • the memory, or a computer readable medium may be one or more readily available memory devices such as random-access memory, read only memory, hard disk, or any other form of digital storage either local or remote.
  • the support circuits may be coupled to the CPU for supporting the processor in a conventional manner. These circuits include cache, power supplies, clock circuits, input/output circuitry and related subsystems, and the like.
  • Substrate processing instructions are generally stored in the memory as a software routine typically known as a recipe.
  • the software routine may also be stored and/or executed by a second CPU (not shown) that is remotely located from the hardware being controlled by the CPU.
  • the software routine when executed by the CPU, transforms the general-purpose computer into a specific purpose computer (controller) that controls the substrate processing, e.g. the deposition power based on one or more of the measured temperatures of the substrate.
  • the method and/or process of the present disclosure is discussed as being implemented as a software routine, some of the method steps that are disclosed therein may be performed in hardware as well as by the software controller. As such, the invention may be implemented in software as executed upon a computer system, and in hardware as an application specific integrated circuit or other type of hardware implementation, or a combination of software and hardware.
  • the controller may execute or perform the method of processing a substrate according to embodiments of the present disclosure.
  • an evaporation source includes a crucible and a controller having a processor and a memory storing instructions that, when executed by the processor, cause the evaporation source to perform a method according to embodiments described herein.
  • a processing system for processing a substrate in a vacuum chamber includes a loading station, particularly configured for horizontal substrate loading, and a vacuum chamber. Further, the processing system includes a controller including a processor and a memory storing instructions that, when executed by the processor, cause performing a method according embodiments of the present disclosure.
  • Embodiments of the present disclosure advantageously provide an improved substrate support and an improved method of measuring substrate temperature. Improved control of a deposition power can be provided. According to one advantage, the tact time can be reduced without damaging layers already provided on the substrate, for example, OLED layers, particularly for a TSP application. [0078] While the foregoing is directed to embodiments, other and further embodiments may be devised without departing from the basic scope, and the scope is determined by the claims that follow.

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Abstract

L'invention concerne un support de substrat pour porter un substrat dans un système de traitement sous vide. Le support de substrat comprend un corps de support de substrat ayant un côté avant pour porter le substrat et un côté arrière opposé au côté avant; un ensemble mandrin dans le corps de support de substrat ou au niveau du côté arrière du corps de support de substrat, une pluralité de premières ouvertures dans le côté avant, la pluralité de premières ouvertures étant en communication fluidique avec un conduit de gaz; une pluralité de secondes ouvertures à travers le corps de support de substrat configurées pour une pluralité de broches de levage portant le substrat pendant un chargement ou un déchargement; une pluralité de premières saillies sur le côté avant, chaque première saillies entourant au moins partiellement une seconde ouverture de la pluralité de secondes ouvertures; et une pluralité de secondes saillies sur le côté avant configurées pour une mesure de température.
PCT/EP2021/054170 2020-06-03 2021-02-19 Support de substrat, procédé de traitement d'un substrat, et système de traitement WO2022174919A1 (fr)

Priority Applications (6)

Application Number Priority Date Filing Date Title
PCT/EP2021/054170 WO2022174919A1 (fr) 2021-02-19 2021-02-19 Support de substrat, procédé de traitement d'un substrat, et système de traitement
KR1020237031464A KR20230146074A (ko) 2021-02-19 2021-02-19 기판 지지체, 기판을 프로세싱하는 방법, 및 프로세싱 시스템
CN202180094198.2A CN116917533A (zh) 2021-02-19 2021-02-19 基板支撑件、处理基板的方法、以及处理系统
PCT/EP2021/064831 WO2021245154A1 (fr) 2020-06-03 2021-06-02 Appareil de dépôt, système de traitement et procédé de fabrication d'une couche d'un dispositif optoélectronique
KR1020227038145A KR20220163422A (ko) 2020-06-03 2021-06-02 증착 장치, 프로세싱 시스템 및 광전자 디바이스의 층을 제조하는 방법
CN202180036943.8A CN115885057A (zh) 2020-06-03 2021-06-02 沉积设备、处理系统以及制造光电装置层的方法

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US6182602B1 (en) * 1996-07-15 2001-02-06 Applied Materials, Inc. Inductively coupled HDP-CVD reactor
US20190067006A1 (en) * 2017-08-30 2019-02-28 Applied Materials, Inc. Epitaxy system integrated with high selectivity oxide removal and high temperature contaminant removal
US20190259647A1 (en) * 2018-02-17 2019-08-22 Applied Materials, Inc. Deposition ring for processing reduced size substrates
US20200185247A1 (en) * 2018-12-07 2020-06-11 Applied Materials, Inc. Physical vapor deposition (pvd) electrostatic chuck with improved thermal coupling for temperature sensitive processes

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US6182602B1 (en) * 1996-07-15 2001-02-06 Applied Materials, Inc. Inductively coupled HDP-CVD reactor
US20190067006A1 (en) * 2017-08-30 2019-02-28 Applied Materials, Inc. Epitaxy system integrated with high selectivity oxide removal and high temperature contaminant removal
US20190259647A1 (en) * 2018-02-17 2019-08-22 Applied Materials, Inc. Deposition ring for processing reduced size substrates
US20200185247A1 (en) * 2018-12-07 2020-06-11 Applied Materials, Inc. Physical vapor deposition (pvd) electrostatic chuck with improved thermal coupling for temperature sensitive processes

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