WO2018047241A1 - Dispositif de génération d'aiguille à plasma à pression atmosphérique, et dispositif et procédé d'ouverture d'un boîtier de circuit intégré à semi-conducteur à l'aide d'une aiguille à plasma à pression atmosphérique - Google Patents

Dispositif de génération d'aiguille à plasma à pression atmosphérique, et dispositif et procédé d'ouverture d'un boîtier de circuit intégré à semi-conducteur à l'aide d'une aiguille à plasma à pression atmosphérique Download PDF

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Publication number
WO2018047241A1
WO2018047241A1 PCT/JP2016/076210 JP2016076210W WO2018047241A1 WO 2018047241 A1 WO2018047241 A1 WO 2018047241A1 JP 2016076210 W JP2016076210 W JP 2016076210W WO 2018047241 A1 WO2018047241 A1 WO 2018047241A1
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WIPO (PCT)
Prior art keywords
atmospheric pressure
integrated circuit
semiconductor integrated
pressure plasma
opening
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PCT/JP2016/076210
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English (en)
Japanese (ja)
Inventor
正士 神藤
泰寿 ▲奇▼田
Original Assignee
日本サイエンティフィック株式会社
株式会社プラズマアプリケーションズ
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Priority to PCT/JP2016/076210 priority Critical patent/WO2018047241A1/fr
Publication of WO2018047241A1 publication Critical patent/WO2018047241A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/26—Plasma torches
    • H05H1/30—Plasma torches using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/98—Methods for disconnecting semiconductor or solid-state bodies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

Definitions

  • the present invention relates to an atmospheric pressure plasma needle generator and a semiconductor integrated circuit package unsealing apparatus and method using the atmospheric pressure plasma needle.
  • an IC package is opened (removal of epoxy resin) by plasma generated by a microwave cavity resonator (for example, Patent Document 1), a combination of laser and plasma (for example, Patent Document 2), or inductively coupled discharge plasma.
  • a microwave cavity resonator for example, Patent Document 1
  • Patent Document 2 a combination of laser and plasma
  • inductively coupled discharge plasma for example, Patent Document 3
  • Generated plasma for example, Patent Document 3
  • silver is a metal that easily oxidizes, and active oxygen having strong oxidizing power causes fatal damage to the silver wire, so that the conventional opening method is in a difficult situation to use.
  • an object of the present invention is to prevent a microwave from leaking to the outside and generate a radical atom having a density high enough to decompose an epoxy resin at low power and low temperature.
  • An atmospheric pressure plasma needle generator includes a tube-shaped insulator in which a gas is introduced from a gas introduction portion and has an opening at one end, and is disposed outside the tube-shaped insulator.
  • a filament-shaped plasma needle is generated between the tip of the inner conductor and the opening of the tube-shaped insulator using a microwave propagating as a waveguide and a gas introduced from the gas introduction portion.
  • the tip of the outer conductor is located outside the tip of the inner conductor, and the opening of the tube-shaped insulator is located outside the tip of the outer conductor. May be located.
  • the diameter of the outer conductor may be 1/2 or less of the wavelength of the microwave.
  • the gas may contain argon and oxygen.
  • the gas may contain hydrogen.
  • the gas may include carbon tetrafluoride.
  • a guide including a gas flow path control surface that spreads gas released from the opening to the outside may be provided in the opening of the tube-shaped insulator. Good.
  • the opening area of the opening of the guide may be larger than the opening area of the opening of the tube-shaped insulator.
  • An opening device for a semiconductor integrated circuit package according to an embodiment of the present invention includes an atmospheric pressure plasma needle generator according to an embodiment of the present invention, and a semiconductor integrated circuit package at a position facing the opening of the tube-shaped insulator.
  • the stage which arranges is provided.
  • the opening device of the semiconductor integrated circuit package according to the embodiment of the present invention may include a temperature adjusting unit that adjusts the temperature of the stage.
  • a method for opening a semiconductor integrated circuit package using an atmospheric pressure plasma needle includes: arranging the semiconductor integrated circuit package in the atmospheric pressure plasma needle generator according to the embodiment of the present invention; and generating the plasma needle. Then, the semiconductor integrated circuit package is irradiated with remote plasma, which is a neutral gas changed in the process in which the plasma needle advances toward the opening of the insulator.
  • the atmospheric pressure plasma needle generator is located at a position facing the opening of the tube-shaped insulator. You may provide the stage which arrange
  • a method of opening a semiconductor integrated circuit package using an atmospheric pressure plasma needle may include heating the semiconductor integrated circuit package to 200 ° C. to 400 ° C.
  • a method for opening a semiconductor integrated circuit package using an atmospheric pressure plasma needle generates a filament-shaped plasma needle using a microwave and a gas, and the plasma needle is formed into a semiconductor integrated circuit package.
  • the semiconductor integrated circuit package is etched until the semiconductor integrated circuit, bonding wires, and bonding pads used in the semiconductor integrated circuit package are exposed by the irradiation.
  • the gas may contain argon and oxygen.
  • the gas may contain hydrogen.
  • the gas may contain carbon tetrafluoride.
  • a method of opening a semiconductor integrated circuit package using an atmospheric pressure plasma needle may include heating the semiconductor integrated circuit package to 200 ° C. to 400 ° C.
  • a method of opening a semiconductor integrated circuit package using an atmospheric pressure plasma needle After the irradiation for a predetermined time, the semiconductor integrated circuit package is cleaned with ultrasonic waves, and the semiconductor integrated circuit package is used. If the surface state of the film is photographed with a camera and it is determined that the semiconductor integrated circuit, the bonding wire, and the bonding pad are not exposed based on the photographed result, the irradiation may be further performed.
  • a semiconductor integrated circuit package unsealing apparatus is a semiconductor integrated circuit package unsealing method for performing a method of unsealing a semiconductor integrated circuit package using an atmospheric pressure plasma needle according to an embodiment of the present invention. It may be a device.
  • the microwave it is possible to prevent the microwave from leaking to the outside, and to generate radical atoms having a density high enough to decompose the epoxy resin at low power and low temperature.
  • FIG. 1 is an overall view of a semiconductor integrated circuit package unsealing apparatus using an atmospheric pressure plasma needle generating apparatus according to a first embodiment of the present invention. It is the figure which showed the flowchart of the opening method of the semiconductor integrated circuit package using the atmospheric pressure plasma needle generator by 1st Embodiment of this invention. It is the figure which showed the atmospheric pressure plasma needle generator by 1st Embodiment of this invention. Is a photograph of the silver wire after irradiation for 30 min Ar and a mixed gas of O 2. Ar and a mixed gas of O 2 was irradiated for 30 minutes of silver wire was subjected to ultrasonic cleaning is a photograph taken using an optical microscope.
  • Ar and a mixed gas of O 2 was irradiated for 30 minutes is a SEM photograph of the silver wire was subjected to ultrasonic cleaning.
  • the silver wire was irradiated for 30 min Ar and a mixed gas of O 2 is an SEM photograph taken.
  • the silver wire was irradiated for 30 min Ar and a mixed gas of O 2 is an SEM photograph taken.
  • the silver wire was irradiated for 30 min Ar and a mixed gas of O 2 is an SEM photograph taken.
  • the silver wire was irradiated for 30 min Ar and a mixed gas of O 2 is an SEM photograph taken.
  • Ar it is a photograph of the silver wire after the irradiation with a gas mixture of O 2 and H 2 30 minutes ultrasonic washing.
  • Ar is a SEM photograph of silver wire was photographed after irradiation with a gas mixture of O 2 and H 2 30 minutes.
  • Ar is a SEM photograph of silver wire was photographed after irradiation with a gas mixture of O 2 and H 2 30 minutes. It is the figure which showed the atmospheric pressure plasma needle generator by 2nd Embodiment of this invention. It is the figure which showed the example of the guide of 2nd Embodiment of this invention. It is the figure which showed the example of the guide of 2nd Embodiment of this invention. Without attaching the guide to a second embodiment of the present invention is a photograph taken before opening the IC package with a mixed gas of Ar and O 2.
  • FIG. 1A shows an overall view of a semiconductor integrated circuit package unsealing apparatus using an atmospheric pressure plasma needle generator according to a first embodiment of the present invention.
  • the semiconductor integrated circuit package unsealing apparatus 200 using the atmospheric pressure plasma needle generator 100 includes an XY stage 1, an IC package 2, a CCD camera 3, an ultrasonic cleaning unit 4, an atmospheric pressure plasma needle generator 100, an auto tuner 6, A mass flow controller 7, a microwave oscillator 8, a gas cylinder 9, a PC 10, a water introduction pipe 19, and an air introduction pipe 20 are provided.
  • the gas cylinder 9 is filled with a gas to be converted into plasma.
  • the gas filled in the gas cylinder 9 may be argon (Ar), oxygen (O 2 ), hydrogen (H 2 ), carbon tetrafluoride (CF 4 ), or the like.
  • a gas that generates plasma filled in the gas cylinder 9 is injected into the atmospheric pressure plasma needle generator 100 via the mass flow controller 7.
  • the flow rate of each gas is controlled by a mass flow controller 7 connected to the PC 10.
  • FIG. 2 shows an example in which one gas cylinder 9 is provided, two or more gas cylinders 9 may be provided, and a plurality of types of gases may be injected into the atmospheric pressure plasma needle generator 100 and mixed.
  • Ar and O 2 gas may be used.
  • the flow rate of Ar is 1.6 to 3.3 Pa ⁇ m 3. / Sec (1,000 to 2,000 sccm), and the flow rate of O 2 may be 0.008 to 0.08 Pa ⁇ m 3 / sec (5 to 50 sccm).
  • the microwave oscillator 8 oscillates microwaves.
  • the oscillated microwave is introduced into the auto tuner 6 and the atmospheric pressure plasma needle generator 100 through a coaxial cable.
  • the microwave frequency may be 2.40 to 2.50 GHz, and the power may be 5 to 20 W.
  • the atmospheric pressure plasma needle generator 100 generates a filament-shaped plasma needle and remote plasma using a microwave and gas. The detailed structure of the atmospheric pressure plasma needle generator 100 will be described later.
  • An IC package 2 to be opened is fixed to the XY stage 1.
  • the movement in the XY axis direction and the movement in the Z axis direction of the XY stage 1 are controlled by the PC 10.
  • the ultrasonic cleaning unit 4 includes an ultrasonic vibrator that vibrates water introduced into the IC package 2 by vibrating to perform ultrasonic cleaning of the IC package 2.
  • the water introduction tube 19 is connected to the ultrasonic cleaning unit 4 and introduces water into the IC package 2.
  • the air introduction tube 20 is connected to the ultrasonic cleaning unit 4, and compressed air is sent to the IC package 2, and the water containing the silica filler is blown away by the force of the air jet, and at the same time, the surface of the IC package 2 is dried.
  • the CCD camera 3 is used for observing the surface state of the IC package 2 with the PC 10. That is, the CCD camera 3 is used to photograph the surface state of the IC package 2, and the PC 10 analyzes the image data to determine whether the surface state has reached the target state.
  • the present invention is not limited to this, and after the image data photographed by the CCD camera 3 is displayed on the PC 10, it is determined whether or not the surface state has reached the target state and the plasma needle irradiation is continued. It is also possible to select whether to end.
  • FIG. 2 is a view showing an atmospheric pressure plasma needle generator according to the first embodiment of the present invention.
  • the atmospheric pressure plasma needle generator 100 includes an alumina tube 13, an outer conductor 15, an inner conductor 16, a gas introduction pipe 17, and an SMA (Sub Miniature Type A) connector 18.
  • the internal conductor 16 is a rod-shaped conductor, and is disposed inside the alumina tube 13. One end of the internal conductor 16 is connected to the SMA connector 18 and microwaves are supplied.
  • the inner conductor 16 may have a length L1 of a quarter wavelength of the microwave, but is not limited thereto, and may be any length as long as it is slightly shorter than the outer conductor 15.
  • the inner conductor 16 has a tip 16t at a portion covered with the outer conductor 15.
  • the outer conductor 15 is a tube-shaped conductor and is disposed outside the alumina tube 13 and connected to the ground potential. Since the length L2 of the outer conductor 15 is larger than the length L1 of the inner conductor 16, the tip end portion 16t of the inner conductor 16 is covered with the outer conductor 15, and is located on the inner side of the open end 15t of the outer conductor 15. .
  • the length L2 of the outer conductor 15 is formed to be about several mm longer than the length L1 of the inner conductor 16, and the tip portion 16t of the inner conductor 16 is about several mm higher than the opening end 15t of the outer conductor 15 in the drawing direction. May be arranged as follows.
  • the diameter of the outer conductor 15 may be less than half the wavelength of the microwave, thereby preventing the microwave transmitted to the inner conductor from leaking to the outside. For example, since the wavelength of 2.45 GHz is 12 cm, the diameter of the outer conductor 15 may be less than 6 cm. In this embodiment, the diameter of the outer conductor 15 is less than 1 cm.
  • the alumina tube 13 is composed of an alumina tube that is longer than the inner conductor 16 and the outer conductor 15, and one end of the alumina tube 13 is connected to the gas introduction tube 17 to introduce a gas to be converted into plasma. Examples of gas introduced from the gas introduction pipe 17 are as described below. The other end of the alumina tube 13 is an opening 13t from which gas is released.
  • the material of the alumina tube 13 is not limited to alumina and may be an insulator.
  • a guide 12 (see FIG. 6) may be provided at the tip of the alumina tube 13, and the gas injected from the gas introduction pipe 17 may be discharged from the guide 12 (see FIG. 6). .
  • the alumina tube 13, the outer conductor 15, and the inner conductor 16 have an open end 15 t of the external conductor 15 located outside the tip end 16 t of the internal conductor 16, and an opening of the alumina tube 13 outside the open end 15 t of the external conductor 15. As long as the relationship in which the portion 13t is located is maintained, it may be changed depending on the gas flow rate, the amount of supplied power, the material, structure, and size of the IC chip.
  • the alumina tube 13 has an outer diameter of 6 mm, an inner diameter of 3 mm, a length of 45 mm, and the outer conductor 15 has an inner diameter of 6 mm.
  • the inner conductor 16 may be a copper, molybdenum or tungsten wire having a diameter of 0.6 to 0.8 mm and a length of 30 to 35 mm.
  • Microwave leakage is achieved by positioning the open end 15t of the outer conductor 15 outside the tip end 16t of the internal conductor 16 and the opening 13t of the alumina tube 13 outside the open end 15t of the external conductor 15. Is strongly suppressed, and it is possible to prevent malfunction of peripheral electronic devices, and to generate radical atoms with a density sufficient to efficiently decompose the epoxy resin at low power and low temperature.
  • the SMA connector 18 is connected to the microwave oscillator 8 (see FIG. 1A) by a flexible coaxial cable having a characteristic impedance of 50 ⁇ .
  • a flexible coaxial cable having a characteristic impedance of 50 ⁇ .
  • Microwave power is used to generate the plasma needle 14 at the tip of the inner conductor 16, but the impedance of the plasma needle as a load is likely to fluctuate due to changes in the discharge state, and part of it becomes a reflected wave.
  • An auto tuner 6 (see FIG. 1A) is inserted between the microwave oscillator 8 (see FIG. 1A) and the SMA connector 18 so that this reflected wave is minimized, and the power is automatically controlled, so that the load Reduces microwave power reflection loss to the plasma needle.
  • a filamentous plasma needle 14 is generated inside the alumina tube 13. More specifically, a filamentous plasma needle 14 is generated between the tip 16t of the inner conductor and the opening 13t of the alumina tube.
  • the flow rate of the gas is preferably a flow rate that avoids a large flow rate that causes a turbulent flow and that the gas flow becomes a laminar flow.
  • the discharge ignition operation method is not limited to the above method, and after preparing for supply of discharge gas and power supply, a high voltage impulse of 20 kV to 25 kV on the piezoelectric transformer or the secondary side of the coil is separated from the tip of the inner conductor 16 by about 10 mm. Discharge ignition may be performed by generating at a different position. By using such a method, a plasma needle can be generated at a low cost.
  • the size of the plasma needle 14 varies depending on the gas flow rate and the microwave input. For example, when the microwave input is 10 W, the length of the plasma needle 14 is about 10 mm and the diameter is about 2 to 3 mm.
  • the tip of the plasma needle 14 is at a low temperature (non-thermal equilibrium state), and in the case of 10 W, it is about 150 ° C. or less and 5 W is about 60 ° C. or less.
  • the microwave oscillator input is increased, the temperature of the exhaust gas can be lowered by making the alumina tube 13 longer.
  • the ion species and electrons recombine to change into a neutral gas flow (remote plasma 14a) containing a large amount of highly reactive excited species. Since the microwave cannot propagate through the remote plasma, the microwave can be prevented from leaking to the outside.
  • the surface of the IC package 2 is irradiated with the remote plasma 14a.
  • the remote plasma 14a containing a large amount of active oxygen is irradiated onto the epoxy resin of the IC package 2, the epoxy resin is decomposed into H 2 O and CO 2 and etched.
  • the active oxygen includes O radicals, but other active species such as ozone may be included.
  • the plasma needle 14 grows by the microwave propagating along the surface of the plasma needle 14 formed at the tip 16t of the inner conductor 16 ionizing the supply gas. Part of the microwave power is radiated to the periphery of the propagation path, causing microwave leakage and disturbing the operation of the surrounding electronic equipment, so it is desirable to cut it off.
  • the tip of the inner conductor 16 is present in the portion covered with the outer conductor 15, so that the microwave propagating through the inner conductor 16 is radiated around the inner conductor 16. Can be prevented. Further, the plasma needle disappears near the tip of the outer conductor 15, and the remote plasma 14a (neutral gas, etching gas) is present in the space up to the opening 13t of the alumina tube 13, so that the microwaves go beyond that. Propagation is not possible, and microwave leakage toward the distal end of the internal conductor 16 can be strongly suppressed, and malfunction of peripheral electronic devices can be prevented.
  • the remote plasma 14a neutral gas, etching gas
  • the atmospheric pressure plasma needle generator 100 When the plasma needle 14 (remote plasma 14a) is generated, the atmospheric pressure plasma needle generator 100 is moved down in the Z-axis direction and brought close to the IC package 2 fixed to the XY stage 1, and the surface of the IC package 2 is When the distance from the opening 13t of the alumina tube 13 is constant, the distance is fixed in the Z-axis direction, and the surface of the IC package 2 is irradiated with the remote plasma 14a.
  • the remote plasma containing a large amount of active oxygen is irradiated onto the epoxy resin of the IC package 2, the epoxy resin is decomposed into H 2 O and CO 2 and etched (S101).
  • a part of the epoxy resin of the IC package 2 can be etched with active oxygen, but the silica filler constituting 70% or more of the epoxy resin of the IC package 2 is not etched with active oxygen.
  • the surface of the package becomes white with silica filler in about 3 to 10 minutes after irradiation.
  • ultrasonic cleaning is performed to remove the silica filler from the package surface.
  • the IC package 2 is moved directly below the ultrasonic cleaning unit 4, and at the same time, the ultrasonic cleaning unit 4 is moved downward to approach the IC package 2.
  • Water is introduced from the water introduction pipe 19 connected to the ultrasonic cleaning section 4 and when several drops are dropped on the surface of the IC package 2, the water is held on the IC package 2 by surface tension.
  • the ultrasonic cleaning is started by the vibration of the ultrasonic vibrator of the ultrasonic cleaning unit 4 in a state where the ultrasonic cleaning unit 4 and water droplets on the surface of the IC package 2 are in contact with each other.
  • the silica filler is peeled from the IC package 2 by ultrasonic cleaning for about 5 to 10 seconds.
  • the IC package 2 from which the water droplets have been removed is moved directly below the CCD camera 3, and the surface state is observed by the PC 10 (S105).
  • the opening operation is terminated.
  • FIG. 3A shows an Ar flow rate of 2.5 Pa ⁇ m 3 / sec (1500 sccm) and an O 2 flow rate of 0.076 Pa ⁇ m 3 / sec (45 sccm) for a silver wire having a diameter of 0.5 mm and 100% silver. It is the photograph which image
  • FIG. 3B is a photograph taken using an optical microscope after further ultrasonic cleaning
  • FIG. 3C is an SEM photograph after further ultrasonic cleaning.
  • 4A to 4D are SEM photographs obtained by photographing the silver wire after being irradiated with the gas under the above conditions (see the scale in the photograph for the scale).
  • FIGS. 5A to 5C show an Ar flow rate of 2.5 Pa ⁇ m 3 / sec (1500 sccm) and an O 2 flow rate of 0.076 Pa ⁇ m 3 for a silver wire having a diameter of 0.5 mm and 100% silver.
  • This is a photograph of the silver wire after ultrasonic cleaning by irradiating a gas with a flow rate of 0.025 Pa ⁇ m 3 / sec (15 sccm) for 30 minutes / sec (45 sccm) and H 2 (scale is a photograph) (See the scale inside.)
  • the silver wire after etching with Ar, O 2 , H 2 gases remains metallic and remains silver. It can be seen that there is no black soot (silver oxide) visible to the naked eye, and the silver wire is not damaged. Referring to the enlarged SEM photograph, only a very small silver oxide crystal is present, and almost no silver oxide is formed. As described above, when an IC package using a silver wire is opened, etching with Ar, O 2 , or H 2 gas can prevent the silver wire from being oxidized and damaged.
  • the flow rate of Ar, O 2 , H 2 when opening an IC package using a silver wire is not limited to the above example.
  • the flow rate of Ar is 1.7 to 3.4 Pa ⁇ m 3 / sec ( 1000 to 2000 sccm)
  • the flow rate of O 2 is 0.008 to 0.08 Pa ⁇ m 3 / sec (5 to 50 sccm)
  • the flow rate of H 2 is 0.008 to 0.03 Pa ⁇ m 3 / sec (5 to 20 sccm).
  • a mixed gas may be used.
  • the etching rate can be increased by adding CF 4 to Ar and O 2 gases.
  • the flow rate of Ar is 1.7 to 3.4 Pa ⁇ m 3 / sec (1000 to 2000 sccm)
  • the flow rate of O 2 is 0.008 to 0.08 Pa ⁇ m 3 / sec (5 to 50 sccm)
  • CF 4 The flow rate may be 0.008 to 0.08 Pa ⁇ m 3 / sec (5 to 50 sccm).
  • FIG. 6 is an overall view of a semiconductor integrated circuit package unsealing apparatus using the atmospheric pressure plasma needle generator according to the second embodiment of the present invention.
  • 7 and 8 are diagrams showing examples of the shape of the guide.
  • the atmospheric pressure plasma needle generator 300 of the present invention includes a guide 12, an alumina tube 13, an outer conductor 15, an inner conductor 16, a gas introduction pipe 17, and an SMA connector 18.
  • the configuration is the same as that of the first embodiment except that the guide 12 is provided.
  • the guide 12 forms a flow path of the remote plasma 14a coming out from the opening 13t of the alumina tube 13 with the XY stage 1 (see FIG. 1A) on which an object to be etched is placed, and the remote plasma 14a is placed outside. And a gas flow path control surface 12a for irradiating the object to be etched with the remote plasma 14a on a wide surface.
  • the guide 12 may be connected to the alumina tube at a connection portion 12b with the alumina tube 13, and may include a cylindrical portion 12c and a gas flow path control surface 12a.
  • the guide 12 may be formed in a columnar shape as shown in FIG. 7, and as shown in FIG. 8, the inner diameter gradually increases from the outlet of the alumina tube 13, and the opening area of the opening 12d of the guide 12 However, you may form in cone shape so that it may become larger than the opening area of the opening part of the alumina tube 13.
  • FIG. The shape of the guide 12 is not limited to this, and the XY stage 1 (FIG. 1A) on which the etching gas flow is designed to flow so as to wash the IC chip surface uniformly while maintaining the laminar flow state, and the object to be etched is mounted thereon.
  • the flow path of the remote plasma 14a that emerges from the opening 13t of the alumina tube 13 is formed, and the remote plasma 14a may be spread outward.
  • the procedure for opening the semiconductor integrated circuit package using the atmospheric pressure plasma needle generator 300 using the guide 12 is the same as that of the semiconductor integrated circuit package using the atmospheric pressure plasma needle generator 100 described above, except as described below.
  • the procedure of opening the semiconductor integrated circuit package by the opening device 200 is the same.
  • a guide 12 is provided in the opening 13 t of the alumina tube 13.
  • the gas injected from the gas introduction pipe 17 passes through the alumina tube 13 and is discharged from the guide 12.
  • the atmospheric pressure plasma needle generator 300 is lowered in the Z-axis direction to approach the IC package 2, and the distance between the surface of the IC package 2 and the guide 12 is a predetermined distance. When it reaches, it is fixed in the Z-axis direction, and the surface of the IC package 2 is irradiated with the remote plasma 14a.
  • FIG. 9A is a photograph taken before opening the IC package with a mixed gas of Ar and O 2 without attaching the guide of the second embodiment of the present invention.
  • FIG. 9B shows a mixed gas of Ar and O 2 (the flow rate of Ar is 2.4 Pa ⁇ m 3 / sec (1440 sccm), the flow rate of O 2 is 0.01 Pa ⁇ m without attaching the guide of the second embodiment of the present invention. It is the photograph which image
  • FIG. 9C shows a mixed gas of Ar and O 2 (Ar flow rate: 2.4 Pa ⁇ m 3 / sec (1440 sccm), O 2 flow rate: 0.01 Pa ⁇ m without attaching the guide of the second embodiment of the present invention. It is the photograph which image
  • FIG. 10A is a photograph taken before attaching the guide of the second embodiment of the present invention and opening the IC package with a mixed gas of Ar and O 2 .
  • FIG. 10B shows a second embodiment of the present invention with a guide attached thereto, and a mixed gas of Ar and O 2 (Ar flow rate 2.4 Pa ⁇ m 3 / sec (1440 sccm), O 2 flow rate 0.01 Pa ⁇ m 3 / It is the photograph which image
  • FIG. 10B shows a second embodiment of the present invention with a guide attached thereto, and a mixed gas of Ar and O 2 (Ar flow rate 2.4 Pa ⁇ m 3 / sec (1440 sccm), O 2 flow rate 0.01 Pa ⁇ m 3 / It is the photograph which image
  • 10C shows a second embodiment of the present invention with a guide and a mixed gas of Ar and O 2 (Ar flow rate 2.4 Pa ⁇ m 3 / sec (1440 sccm), O 2 flow rate 0.01 Pa ⁇ m 3 / It is the photograph which image
  • the atmospheric pressure plasma needle generator 300 does not allow air to enter from the outside to the surface of the IC package 2 to be etched by attaching the guide 12 having the above-described shape, and uniformly chips. Since the surface is irradiated with active oxygen, the etching area can be increased. Since the etching gas can flow uniformly on the surface of the IC chip without waste, it is possible to cleanly etch the lower part of the bonding wire. In addition, the etching rate can be increased.
  • the remote plasma 14a spreads in a plane shape away from the plasma needle generating portion and is irradiated onto the surface of the IC package 2, so that irradiation is performed at a point without attaching the guide 12. Since it is possible to irradiate plasma at a temperature lower than that of the case, and the influence of the microwave on the IC chip can be reduced, damage to the IC chip due to temperature and microwave can be reduced.
  • the plasma needle generator of the present invention is used, and the same applies to the case where the IC package is opened using a general atmospheric pressure plasma generator. That is, even when the IC package is opened using a general atmospheric pressure plasma generator other than the plasma needle generator of the present invention, the guide 12 having the above-described shape can be attached to cleanly clean the lower part of the bonding wire. In addition, the etching rate can be increased, and damage to the IC chip due to temperature and microwaves can be reduced.
  • FIG. 11 is a view showing an atmospheric pressure plasma needle generator according to a third embodiment of the present invention.
  • the atmospheric pressure plasma needle generator 500 of this embodiment includes a heater 21, a guide 12, an alumina tube 13, an outer conductor 15, an inner conductor 16, a gas introduction pipe 17, and an SMA connector 18. Except for the point provided with the heater 21, it is the same as that of the structure of 2nd Example.
  • the heater 21 is arranged at a place where the IC package 2 can be heated below the IC package 2 and heats the IC package 2.
  • the heater 21 is controlled by the PC 10 and is maintained in a range of about 200 ° C. to 400 ° C. In this case, the PC 10 operates as a temperature controller.
  • the procedure for opening the semiconductor integrated circuit package using the atmospheric pressure plasma needle generator 500 is the same as the procedure for opening the semiconductor integrated circuit package using the atmospheric pressure plasma needle generators 100 and 300 described above, except for the points described below. It is.
  • An IC package 2 using a silver wire is placed on the heater 21 of the XY stage 1 (see FIG. 1A) disposed opposite to the atmospheric pressure plasma needle generator 500.
  • the heater 21 heats the IC package 2 while being maintained at a constant temperature in the range of about 200 ° C. to 400 ° C. by the PC 10.
  • the IC package is opened by irradiating plasma generated using a mixed gas of Ar and O 2 according to the procedure of the first embodiment or the second embodiment.
  • the silver wire Since silver oxide is decomposed into silver and oxygen at about 200 ° C. to 300 ° C., the silver wire is not oxidized by oxygen plasma at a high temperature of about 200 ° C. to 400 ° C., and damage can be prevented. Therefore, according to the atmospheric pressure plasma needle generator 500, when opening the IC package 2 in which the silver wire is used, the silver wire is oxidized using only a mixed gas of Ar and O 2 without using H 2 gas. Can be opened while preventing.
  • the plasma needle generator of the present invention is used, and the same applies to the case where the IC package is opened using a general atmospheric pressure plasma generator. That is, even when the IC package is opened using a general atmospheric pressure plasma generator other than the plasma needle generator of the present invention, the opening operation is performed in a state where the IC package is heated by the heater as described above. By doing so, when opening an IC package using a silver wire, it is possible to open the package while preventing oxidation of the silver wire using only a mixed gas of Ar and O 2 without using H 2 gas.
  • the present embodiment is not limited to the example described above, and may be opened using a mixed gas of Ar, O 2 and H 2 .
  • Atmospheric pressure plasma needle generator 200 Semiconductor integrated circuit package unsealing apparatus 1 using an atmospheric pressure plasma needle generator 1 XY stage 2 IC package 3 CCD camera 4 Ultrasonic cleaning unit 6 Auto tuner 7 Mass flow controller 8 Micro Wave oscillator 9 Gas cylinder 10 PC 12 Guide 13 Alumina tube 13 t Opening 14 of alumina tube 13 Plasma needle 14 a Remote plasma 15 External conductor 15 t Opening end 16 of external conductor 16 Inner conductor 16 t End of internal conductor 17 Gas introduction pipe 18 SMA connector 19 Water introduction pipe 20 Air introduction Tube 21 heater

Abstract

Le problème décrit par la présente invention est de fournir un dispositif de génération d'aiguille à plasma à pression atmosphérique et un procédé d'ouverture d'un boîtier de circuit intégré à semi-conducteur à l'aide de l'aiguille à plasma à pression atmosphérique. La solution selon l'invention porte sur un dispositif de génération d'aiguille à plasma à pression atmosphérique qui est pourvu : d'un isolant en forme de tube à l'intérieur duquel est introduit du gaz à partir d'une unité d'introduction de gaz, ayant une ouverture à une extrémité ; d'un conducteur externe en forme de tube placé à l'extérieur de l'isolant en forme de tube ; et d'un conducteur interne placé à l'intérieur de l'isolant en forme de tube, ayant une partie de pointe recouverte par le conducteur externe. En utilisant les micro-ondes propagées avec l'isolant, le conducteur interne et le conducteur externe en tant que guides d'ondes et le gaz introduit à partir de l'unité d'introduction de gaz, le dispositif de génération d'aiguille à plasma à pression atmosphérique génère une aiguille à plasma en forme de filament entre la partie de pointe du conducteur interne et l'ouverture de l'isolant en forme de tube.
PCT/JP2016/076210 2016-09-06 2016-09-06 Dispositif de génération d'aiguille à plasma à pression atmosphérique, et dispositif et procédé d'ouverture d'un boîtier de circuit intégré à semi-conducteur à l'aide d'une aiguille à plasma à pression atmosphérique WO2018047241A1 (fr)

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PCT/JP2016/076210 WO2018047241A1 (fr) 2016-09-06 2016-09-06 Dispositif de génération d'aiguille à plasma à pression atmosphérique, et dispositif et procédé d'ouverture d'un boîtier de circuit intégré à semi-conducteur à l'aide d'une aiguille à plasma à pression atmosphérique

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PCT/JP2016/076210 WO2018047241A1 (fr) 2016-09-06 2016-09-06 Dispositif de génération d'aiguille à plasma à pression atmosphérique, et dispositif et procédé d'ouverture d'un boîtier de circuit intégré à semi-conducteur à l'aide d'une aiguille à plasma à pression atmosphérique

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CN110267425A (zh) * 2019-06-21 2019-09-20 电子科技大学 一种复合式双同轴线大气压低温微波等离子体射流源

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JP2007005059A (ja) * 2005-06-22 2007-01-11 Ebara Corp プラズマ式溶融炉
WO2008004318A1 (fr) * 2006-07-06 2008-01-10 Adtec Plasma Technology Co., Ltd. Procédé de traitement au plasma par micro-ondes et appareil associé
JP2012038469A (ja) * 2010-08-04 2012-02-23 Toyota Gakuen 大気圧プラズマジェット装置
WO2013184000A1 (fr) * 2012-06-06 2013-12-12 Stichting Materials Innovation Institute (M2I) Dispositif de gravure par jet de plasma et procédé permettant de supprimer une partie d'encapsulation d'un échantillon au moyen d'une gravure par jet de plasma
JP2014175051A (ja) * 2013-03-05 2014-09-22 Tokyo Electron Ltd マイクロ波導波装置、プラズマ処理装置及びプラズマ処理方法
US20150118856A1 (en) * 2013-10-30 2015-04-30 Nisene Technology Group Microwave induced plasma decapsulation using a dielectric plasma discharge tube

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JP2007005059A (ja) * 2005-06-22 2007-01-11 Ebara Corp プラズマ式溶融炉
WO2008004318A1 (fr) * 2006-07-06 2008-01-10 Adtec Plasma Technology Co., Ltd. Procédé de traitement au plasma par micro-ondes et appareil associé
JP2012038469A (ja) * 2010-08-04 2012-02-23 Toyota Gakuen 大気圧プラズマジェット装置
WO2013184000A1 (fr) * 2012-06-06 2013-12-12 Stichting Materials Innovation Institute (M2I) Dispositif de gravure par jet de plasma et procédé permettant de supprimer une partie d'encapsulation d'un échantillon au moyen d'une gravure par jet de plasma
JP2014175051A (ja) * 2013-03-05 2014-09-22 Tokyo Electron Ltd マイクロ波導波装置、プラズマ処理装置及びプラズマ処理方法
US20150118856A1 (en) * 2013-10-30 2015-04-30 Nisene Technology Group Microwave induced plasma decapsulation using a dielectric plasma discharge tube

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Publication number Priority date Publication date Assignee Title
CN110267425A (zh) * 2019-06-21 2019-09-20 电子科技大学 一种复合式双同轴线大气压低温微波等离子体射流源

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