WO2013184000A1 - Dispositif de gravure par jet de plasma et procédé permettant de supprimer une partie d'encapsulation d'un échantillon au moyen d'une gravure par jet de plasma - Google Patents

Dispositif de gravure par jet de plasma et procédé permettant de supprimer une partie d'encapsulation d'un échantillon au moyen d'une gravure par jet de plasma Download PDF

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Publication number
WO2013184000A1
WO2013184000A1 PCT/NL2013/050404 NL2013050404W WO2013184000A1 WO 2013184000 A1 WO2013184000 A1 WO 2013184000A1 NL 2013050404 W NL2013050404 W NL 2013050404W WO 2013184000 A1 WO2013184000 A1 WO 2013184000A1
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WIPO (PCT)
Prior art keywords
plasma
etching
gas
sample
plasma jet
Prior art date
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PCT/NL2013/050404
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English (en)
Inventor
Cornelis Ignatius Maria Beenakker
Jiaqi TANG
Johannes Bernardus Jozef Schelen
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Stichting Materials Innovation Institute (M2I)
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Publication of WO2013184000A1 publication Critical patent/WO2013184000A1/fr

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N1/00—Sampling; Preparing specimens for investigation
    • G01N1/28—Preparing specimens for investigation including physical details of (bio-)chemical methods covered elsewhere, e.g. G01N33/50, C12Q
    • G01N1/32—Polishing; Etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32357—Generation remote from the workpiece, e.g. down-stream
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32366—Localised processing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67126—Apparatus for sealing, encapsulating, glassing, decapsulating or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H01J37/32201—Generating means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
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    • H01J37/32211—Means for coupling power to the plasma
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    • H01J37/32825—Working under atmospheric pressure or higher
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    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
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    • H01L21/67005—Apparatus not specifically provided for elsewhere
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    • H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
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    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
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    • H01L2224/45001—Core members of the connector
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
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    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
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    • H01—ELECTRIC ELEMENTS
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
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    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45147—Copper (Cu) as principal constituent
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
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    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L2224/98—Methods for disconnecting semiconductor or solid-state bodies
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    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
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    • H01L2924/10251—Elemental semiconductors, i.e. Group IV
    • H01L2924/10253—Silicon [Si]
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    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/146—Mixed devices
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

Abstract

La présente invention a trait à un appareil de gravure par plasma (1) et à un procédé correspondant de désencapsulation (à savoir, de retrait de l'encapsulation ou du boîtier d'un) un échantillon semi-conducteur ou électronique (46), au moyen d'une gravure basée sur le jet de plasma induit par résonance à micro-ondes (44). Le jet de plasma est généré dans une cavité de résonance à micro-ondes (6) et éjecté vers l'échantillon (46). Le dispositif et le procédé selon la présente invention emploient une couche de masquage liquide (58) au-dessus de l'échantillon (46), de manière à confiner le jet de plasma (44) et à améliorer la précision de la gravure.
PCT/NL2013/050404 2012-06-06 2013-06-06 Dispositif de gravure par jet de plasma et procédé permettant de supprimer une partie d'encapsulation d'un échantillon au moyen d'une gravure par jet de plasma WO2013184000A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
NL2008943 2012-06-06
NL2008943A NL2008943C2 (en) 2012-06-06 2012-06-06 Plasma jet etching device and method for removing an encapsulation portion of a sample via plasma jet etching.

Publications (1)

Publication Number Publication Date
WO2013184000A1 true WO2013184000A1 (fr) 2013-12-12

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PCT/NL2013/050404 WO2013184000A1 (fr) 2012-06-06 2013-06-06 Dispositif de gravure par jet de plasma et procédé permettant de supprimer une partie d'encapsulation d'un échantillon au moyen d'une gravure par jet de plasma

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NL (1) NL2008943C2 (fr)
TW (1) TW201403708A (fr)
WO (1) WO2013184000A1 (fr)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2016144159A1 (fr) * 2015-03-06 2016-09-15 Jiaco Instruments Holding B.V. Système et procédé de décapsulation de conditionnements plastiques de circuits intégrés
WO2018016957A1 (fr) 2016-07-20 2018-01-25 Jiaco Instruments Holding B.V. Décapsulation de dispositifs électroniques
WO2018047241A1 (fr) * 2016-09-06 2018-03-15 日本サイエンティフィック株式会社 Dispositif de génération d'aiguille à plasma à pression atmosphérique, et dispositif et procédé d'ouverture d'un boîtier de circuit intégré à semi-conducteur à l'aide d'une aiguille à plasma à pression atmosphérique
CN111639464A (zh) * 2020-06-03 2020-09-08 国网重庆市电力公司电力科学研究院 等离子体射流发生器参数优化方法、装置及存储介质
CN112366127A (zh) * 2020-10-09 2021-02-12 上海交通大学 固态掩膜聚焦的大气压低温等离子体射流加工方法及应用

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US6451217B1 (en) * 1998-06-09 2002-09-17 Speedfam-Ipec Co., Ltd. Wafer etching method
EP1251398A2 (fr) * 2001-04-19 2002-10-23 Xerox Corporation Méthode pour imprimer des masque de gravure qui utilise des matériaux à changement de phase

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Publication number Priority date Publication date Assignee Title
US6451217B1 (en) * 1998-06-09 2002-09-17 Speedfam-Ipec Co., Ltd. Wafer etching method
EP1251398A2 (fr) * 2001-04-19 2002-10-23 Xerox Corporation Méthode pour imprimer des masque de gravure qui utilise des matériaux à changement de phase

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Title
BEENAKKER C.I.M.: "A cavity for microwave-induced plasmas operated in helium and argon at atmospheric pressure", SPECTROCHIMICA ACTA, vol. 31B, 1976, pages 483 - 486
J TANG: "Plasma Decapsulation of Plastic IC Packages with Copper Wire Bonds for Failure Analysis", 2011 INTERNATIONAL CONFERENCE ON ELECTRONIC PACKAGING TECHNOLOGY & HIGH DENSITY PACKAGING, 11 August 2011 (2011-08-11), pages 888 - 892, XP055058389, ISBN: 978-1-45-771770-3, Retrieved from the Internet <URL:http://ieeexplore.ieee.org/ielx5/6056740/6066691/06066972.pdf?tp=&arnumber=6066972&isnumber=6066691> [retrieved on 20130403] *
LI Q. ET AL.: "A Novel Decapsulation Technique for Failure Analysis of Integrated Circuits", PROC 7TH INT. CONF. ON ELECTRONIC PACKAGING TECHNOLOGY, SHANGHAI, CHINA, 2006, pages 1 - 5
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TANG J ET AL: "Flexible system for real-time plasma decapsulation of copper wire bonded IC packages", ELECTRONIC COMPONENTS AND TECHNOLOGY CONFERENCE (ECTC), 2012 IEEE 62ND, IEEE, 29 May 2012 (2012-05-29), pages 1764 - 1769, XP032210829, ISBN: 978-1-4673-1966-9, DOI: 10.1109/ECTC.2012.6249076 *
TANG J ET AL: "Optimization of the Microwave Induced Plasma system for failure analysis in integrated circuit packaging", ELECTRONIC PACKAGING TECHNOLOGY&HIGH DENSITY PACKAGING (ICEPT-HDP), 2010 11TH INTERNATIONAL CONFERENCE ON, IEEE, PISCATAWAY, NJ, USA, 16 August 2010 (2010-08-16), pages 1034 - 1038, XP031761082, ISBN: 978-1-4244-8140-8 *
TANG J. ET AL.: "Optimization of the Microwave Induced Plasma System for Failure Analysis in Integrated Circuit Packaging", PROC 11TH INT. CONF. ON ELECTRONIC PACKAGING TECHNOLOGY AND HIGH DENSITY PACKAGING, 2010, pages 1034 - 1038
TANG J. ET AL.: "Plasma Decapsulation of Plastic IC Packages with Copper Wire Bonds for Failure Analysis", PROC 12TH INT. CONF. ON ELECTRONIC PACKAGING TECHNOLOGY AND HIGH DENSITY PACKAGING, 2011, pages 888 - 892

Cited By (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2016144159A1 (fr) * 2015-03-06 2016-09-15 Jiaco Instruments Holding B.V. Système et procédé de décapsulation de conditionnements plastiques de circuits intégrés
NL2014415B1 (en) * 2015-03-06 2016-10-13 Jiaco Instr Holding B V System and method for decapsulation of plastic integrated circuit packages.
US11295968B2 (en) 2015-03-06 2022-04-05 Jiaco Instruments Holding B.V. System and method for decapsulation of plastic integrated circuit packages
KR20190039956A (ko) * 2016-07-20 2019-04-16 지아코 인스트루먼츠 홀딩 비.브이. 전자 디바이스들의 디캡
CN109643664A (zh) * 2016-07-20 2019-04-16 佳科仪器控股有限责任公司 电子设备的解封装
NL2017198B1 (en) * 2016-07-20 2018-01-26 Jiaco Instr Holding B V Decapsulation of electronic devices
US10879079B2 (en) 2016-07-20 2020-12-29 Jiaco Instruments Holding B.V. Decapsulation of electronic devices
KR102329407B1 (ko) * 2016-07-20 2021-11-23 지아코 인스트루먼츠 홀딩 비.브이. 전자 디바이스들의 디캡
WO2018016957A1 (fr) 2016-07-20 2018-01-25 Jiaco Instruments Holding B.V. Décapsulation de dispositifs électroniques
CN109643664B (zh) * 2016-07-20 2023-05-30 佳科仪器控股有限责任公司 电子设备的解封装
WO2018047241A1 (fr) * 2016-09-06 2018-03-15 日本サイエンティフィック株式会社 Dispositif de génération d'aiguille à plasma à pression atmosphérique, et dispositif et procédé d'ouverture d'un boîtier de circuit intégré à semi-conducteur à l'aide d'une aiguille à plasma à pression atmosphérique
CN111639464A (zh) * 2020-06-03 2020-09-08 国网重庆市电力公司电力科学研究院 等离子体射流发生器参数优化方法、装置及存储介质
CN111639464B (zh) * 2020-06-03 2023-06-27 国网重庆市电力公司电力科学研究院 等离子体射流发生器参数优化方法、装置及存储介质
CN112366127A (zh) * 2020-10-09 2021-02-12 上海交通大学 固态掩膜聚焦的大气压低温等离子体射流加工方法及应用
CN112366127B (zh) * 2020-10-09 2021-07-23 上海交通大学 固态掩膜聚焦的大气压低温等离子体射流加工方法及应用

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