WO2018047241A1 - Atmospheric pressure plasma needle generating device, and device and method for unsealing semiconductor integrated circuit package using atmospheric pressure plasma needle - Google Patents

Atmospheric pressure plasma needle generating device, and device and method for unsealing semiconductor integrated circuit package using atmospheric pressure plasma needle Download PDF

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Publication number
WO2018047241A1
WO2018047241A1 PCT/JP2016/076210 JP2016076210W WO2018047241A1 WO 2018047241 A1 WO2018047241 A1 WO 2018047241A1 JP 2016076210 W JP2016076210 W JP 2016076210W WO 2018047241 A1 WO2018047241 A1 WO 2018047241A1
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WIPO (PCT)
Prior art keywords
atmospheric pressure
integrated circuit
semiconductor integrated
pressure plasma
opening
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PCT/JP2016/076210
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French (fr)
Japanese (ja)
Inventor
正士 神藤
泰寿 ▲奇▼田
Original Assignee
日本サイエンティフィック株式会社
株式会社プラズマアプリケーションズ
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Priority to PCT/JP2016/076210 priority Critical patent/WO2018047241A1/en
Publication of WO2018047241A1 publication Critical patent/WO2018047241A1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/26—Plasma torches
    • H05H1/30—Plasma torches using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/98—Methods for disconnecting semiconductor or solid-state bodies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

Definitions

  • the present invention relates to an atmospheric pressure plasma needle generator and a semiconductor integrated circuit package unsealing apparatus and method using the atmospheric pressure plasma needle.
  • an IC package is opened (removal of epoxy resin) by plasma generated by a microwave cavity resonator (for example, Patent Document 1), a combination of laser and plasma (for example, Patent Document 2), or inductively coupled discharge plasma.
  • a microwave cavity resonator for example, Patent Document 1
  • Patent Document 2 a combination of laser and plasma
  • inductively coupled discharge plasma for example, Patent Document 3
  • Generated plasma for example, Patent Document 3
  • silver is a metal that easily oxidizes, and active oxygen having strong oxidizing power causes fatal damage to the silver wire, so that the conventional opening method is in a difficult situation to use.
  • an object of the present invention is to prevent a microwave from leaking to the outside and generate a radical atom having a density high enough to decompose an epoxy resin at low power and low temperature.
  • An atmospheric pressure plasma needle generator includes a tube-shaped insulator in which a gas is introduced from a gas introduction portion and has an opening at one end, and is disposed outside the tube-shaped insulator.
  • a filament-shaped plasma needle is generated between the tip of the inner conductor and the opening of the tube-shaped insulator using a microwave propagating as a waveguide and a gas introduced from the gas introduction portion.
  • the tip of the outer conductor is located outside the tip of the inner conductor, and the opening of the tube-shaped insulator is located outside the tip of the outer conductor. May be located.
  • the diameter of the outer conductor may be 1/2 or less of the wavelength of the microwave.
  • the gas may contain argon and oxygen.
  • the gas may contain hydrogen.
  • the gas may include carbon tetrafluoride.
  • a guide including a gas flow path control surface that spreads gas released from the opening to the outside may be provided in the opening of the tube-shaped insulator. Good.
  • the opening area of the opening of the guide may be larger than the opening area of the opening of the tube-shaped insulator.
  • An opening device for a semiconductor integrated circuit package according to an embodiment of the present invention includes an atmospheric pressure plasma needle generator according to an embodiment of the present invention, and a semiconductor integrated circuit package at a position facing the opening of the tube-shaped insulator.
  • the stage which arranges is provided.
  • the opening device of the semiconductor integrated circuit package according to the embodiment of the present invention may include a temperature adjusting unit that adjusts the temperature of the stage.
  • a method for opening a semiconductor integrated circuit package using an atmospheric pressure plasma needle includes: arranging the semiconductor integrated circuit package in the atmospheric pressure plasma needle generator according to the embodiment of the present invention; and generating the plasma needle. Then, the semiconductor integrated circuit package is irradiated with remote plasma, which is a neutral gas changed in the process in which the plasma needle advances toward the opening of the insulator.
  • the atmospheric pressure plasma needle generator is located at a position facing the opening of the tube-shaped insulator. You may provide the stage which arrange
  • a method of opening a semiconductor integrated circuit package using an atmospheric pressure plasma needle may include heating the semiconductor integrated circuit package to 200 ° C. to 400 ° C.
  • a method for opening a semiconductor integrated circuit package using an atmospheric pressure plasma needle generates a filament-shaped plasma needle using a microwave and a gas, and the plasma needle is formed into a semiconductor integrated circuit package.
  • the semiconductor integrated circuit package is etched until the semiconductor integrated circuit, bonding wires, and bonding pads used in the semiconductor integrated circuit package are exposed by the irradiation.
  • the gas may contain argon and oxygen.
  • the gas may contain hydrogen.
  • the gas may contain carbon tetrafluoride.
  • a method of opening a semiconductor integrated circuit package using an atmospheric pressure plasma needle may include heating the semiconductor integrated circuit package to 200 ° C. to 400 ° C.
  • a method of opening a semiconductor integrated circuit package using an atmospheric pressure plasma needle After the irradiation for a predetermined time, the semiconductor integrated circuit package is cleaned with ultrasonic waves, and the semiconductor integrated circuit package is used. If the surface state of the film is photographed with a camera and it is determined that the semiconductor integrated circuit, the bonding wire, and the bonding pad are not exposed based on the photographed result, the irradiation may be further performed.
  • a semiconductor integrated circuit package unsealing apparatus is a semiconductor integrated circuit package unsealing method for performing a method of unsealing a semiconductor integrated circuit package using an atmospheric pressure plasma needle according to an embodiment of the present invention. It may be a device.
  • the microwave it is possible to prevent the microwave from leaking to the outside, and to generate radical atoms having a density high enough to decompose the epoxy resin at low power and low temperature.
  • FIG. 1 is an overall view of a semiconductor integrated circuit package unsealing apparatus using an atmospheric pressure plasma needle generating apparatus according to a first embodiment of the present invention. It is the figure which showed the flowchart of the opening method of the semiconductor integrated circuit package using the atmospheric pressure plasma needle generator by 1st Embodiment of this invention. It is the figure which showed the atmospheric pressure plasma needle generator by 1st Embodiment of this invention. Is a photograph of the silver wire after irradiation for 30 min Ar and a mixed gas of O 2. Ar and a mixed gas of O 2 was irradiated for 30 minutes of silver wire was subjected to ultrasonic cleaning is a photograph taken using an optical microscope.
  • Ar and a mixed gas of O 2 was irradiated for 30 minutes is a SEM photograph of the silver wire was subjected to ultrasonic cleaning.
  • the silver wire was irradiated for 30 min Ar and a mixed gas of O 2 is an SEM photograph taken.
  • the silver wire was irradiated for 30 min Ar and a mixed gas of O 2 is an SEM photograph taken.
  • the silver wire was irradiated for 30 min Ar and a mixed gas of O 2 is an SEM photograph taken.
  • the silver wire was irradiated for 30 min Ar and a mixed gas of O 2 is an SEM photograph taken.
  • Ar it is a photograph of the silver wire after the irradiation with a gas mixture of O 2 and H 2 30 minutes ultrasonic washing.
  • Ar is a SEM photograph of silver wire was photographed after irradiation with a gas mixture of O 2 and H 2 30 minutes.
  • Ar is a SEM photograph of silver wire was photographed after irradiation with a gas mixture of O 2 and H 2 30 minutes. It is the figure which showed the atmospheric pressure plasma needle generator by 2nd Embodiment of this invention. It is the figure which showed the example of the guide of 2nd Embodiment of this invention. It is the figure which showed the example of the guide of 2nd Embodiment of this invention. Without attaching the guide to a second embodiment of the present invention is a photograph taken before opening the IC package with a mixed gas of Ar and O 2.
  • FIG. 1A shows an overall view of a semiconductor integrated circuit package unsealing apparatus using an atmospheric pressure plasma needle generator according to a first embodiment of the present invention.
  • the semiconductor integrated circuit package unsealing apparatus 200 using the atmospheric pressure plasma needle generator 100 includes an XY stage 1, an IC package 2, a CCD camera 3, an ultrasonic cleaning unit 4, an atmospheric pressure plasma needle generator 100, an auto tuner 6, A mass flow controller 7, a microwave oscillator 8, a gas cylinder 9, a PC 10, a water introduction pipe 19, and an air introduction pipe 20 are provided.
  • the gas cylinder 9 is filled with a gas to be converted into plasma.
  • the gas filled in the gas cylinder 9 may be argon (Ar), oxygen (O 2 ), hydrogen (H 2 ), carbon tetrafluoride (CF 4 ), or the like.
  • a gas that generates plasma filled in the gas cylinder 9 is injected into the atmospheric pressure plasma needle generator 100 via the mass flow controller 7.
  • the flow rate of each gas is controlled by a mass flow controller 7 connected to the PC 10.
  • FIG. 2 shows an example in which one gas cylinder 9 is provided, two or more gas cylinders 9 may be provided, and a plurality of types of gases may be injected into the atmospheric pressure plasma needle generator 100 and mixed.
  • Ar and O 2 gas may be used.
  • the flow rate of Ar is 1.6 to 3.3 Pa ⁇ m 3. / Sec (1,000 to 2,000 sccm), and the flow rate of O 2 may be 0.008 to 0.08 Pa ⁇ m 3 / sec (5 to 50 sccm).
  • the microwave oscillator 8 oscillates microwaves.
  • the oscillated microwave is introduced into the auto tuner 6 and the atmospheric pressure plasma needle generator 100 through a coaxial cable.
  • the microwave frequency may be 2.40 to 2.50 GHz, and the power may be 5 to 20 W.
  • the atmospheric pressure plasma needle generator 100 generates a filament-shaped plasma needle and remote plasma using a microwave and gas. The detailed structure of the atmospheric pressure plasma needle generator 100 will be described later.
  • An IC package 2 to be opened is fixed to the XY stage 1.
  • the movement in the XY axis direction and the movement in the Z axis direction of the XY stage 1 are controlled by the PC 10.
  • the ultrasonic cleaning unit 4 includes an ultrasonic vibrator that vibrates water introduced into the IC package 2 by vibrating to perform ultrasonic cleaning of the IC package 2.
  • the water introduction tube 19 is connected to the ultrasonic cleaning unit 4 and introduces water into the IC package 2.
  • the air introduction tube 20 is connected to the ultrasonic cleaning unit 4, and compressed air is sent to the IC package 2, and the water containing the silica filler is blown away by the force of the air jet, and at the same time, the surface of the IC package 2 is dried.
  • the CCD camera 3 is used for observing the surface state of the IC package 2 with the PC 10. That is, the CCD camera 3 is used to photograph the surface state of the IC package 2, and the PC 10 analyzes the image data to determine whether the surface state has reached the target state.
  • the present invention is not limited to this, and after the image data photographed by the CCD camera 3 is displayed on the PC 10, it is determined whether or not the surface state has reached the target state and the plasma needle irradiation is continued. It is also possible to select whether to end.
  • FIG. 2 is a view showing an atmospheric pressure plasma needle generator according to the first embodiment of the present invention.
  • the atmospheric pressure plasma needle generator 100 includes an alumina tube 13, an outer conductor 15, an inner conductor 16, a gas introduction pipe 17, and an SMA (Sub Miniature Type A) connector 18.
  • the internal conductor 16 is a rod-shaped conductor, and is disposed inside the alumina tube 13. One end of the internal conductor 16 is connected to the SMA connector 18 and microwaves are supplied.
  • the inner conductor 16 may have a length L1 of a quarter wavelength of the microwave, but is not limited thereto, and may be any length as long as it is slightly shorter than the outer conductor 15.
  • the inner conductor 16 has a tip 16t at a portion covered with the outer conductor 15.
  • the outer conductor 15 is a tube-shaped conductor and is disposed outside the alumina tube 13 and connected to the ground potential. Since the length L2 of the outer conductor 15 is larger than the length L1 of the inner conductor 16, the tip end portion 16t of the inner conductor 16 is covered with the outer conductor 15, and is located on the inner side of the open end 15t of the outer conductor 15. .
  • the length L2 of the outer conductor 15 is formed to be about several mm longer than the length L1 of the inner conductor 16, and the tip portion 16t of the inner conductor 16 is about several mm higher than the opening end 15t of the outer conductor 15 in the drawing direction. May be arranged as follows.
  • the diameter of the outer conductor 15 may be less than half the wavelength of the microwave, thereby preventing the microwave transmitted to the inner conductor from leaking to the outside. For example, since the wavelength of 2.45 GHz is 12 cm, the diameter of the outer conductor 15 may be less than 6 cm. In this embodiment, the diameter of the outer conductor 15 is less than 1 cm.
  • the alumina tube 13 is composed of an alumina tube that is longer than the inner conductor 16 and the outer conductor 15, and one end of the alumina tube 13 is connected to the gas introduction tube 17 to introduce a gas to be converted into plasma. Examples of gas introduced from the gas introduction pipe 17 are as described below. The other end of the alumina tube 13 is an opening 13t from which gas is released.
  • the material of the alumina tube 13 is not limited to alumina and may be an insulator.
  • a guide 12 (see FIG. 6) may be provided at the tip of the alumina tube 13, and the gas injected from the gas introduction pipe 17 may be discharged from the guide 12 (see FIG. 6). .
  • the alumina tube 13, the outer conductor 15, and the inner conductor 16 have an open end 15 t of the external conductor 15 located outside the tip end 16 t of the internal conductor 16, and an opening of the alumina tube 13 outside the open end 15 t of the external conductor 15. As long as the relationship in which the portion 13t is located is maintained, it may be changed depending on the gas flow rate, the amount of supplied power, the material, structure, and size of the IC chip.
  • the alumina tube 13 has an outer diameter of 6 mm, an inner diameter of 3 mm, a length of 45 mm, and the outer conductor 15 has an inner diameter of 6 mm.
  • the inner conductor 16 may be a copper, molybdenum or tungsten wire having a diameter of 0.6 to 0.8 mm and a length of 30 to 35 mm.
  • Microwave leakage is achieved by positioning the open end 15t of the outer conductor 15 outside the tip end 16t of the internal conductor 16 and the opening 13t of the alumina tube 13 outside the open end 15t of the external conductor 15. Is strongly suppressed, and it is possible to prevent malfunction of peripheral electronic devices, and to generate radical atoms with a density sufficient to efficiently decompose the epoxy resin at low power and low temperature.
  • the SMA connector 18 is connected to the microwave oscillator 8 (see FIG. 1A) by a flexible coaxial cable having a characteristic impedance of 50 ⁇ .
  • a flexible coaxial cable having a characteristic impedance of 50 ⁇ .
  • Microwave power is used to generate the plasma needle 14 at the tip of the inner conductor 16, but the impedance of the plasma needle as a load is likely to fluctuate due to changes in the discharge state, and part of it becomes a reflected wave.
  • An auto tuner 6 (see FIG. 1A) is inserted between the microwave oscillator 8 (see FIG. 1A) and the SMA connector 18 so that this reflected wave is minimized, and the power is automatically controlled, so that the load Reduces microwave power reflection loss to the plasma needle.
  • a filamentous plasma needle 14 is generated inside the alumina tube 13. More specifically, a filamentous plasma needle 14 is generated between the tip 16t of the inner conductor and the opening 13t of the alumina tube.
  • the flow rate of the gas is preferably a flow rate that avoids a large flow rate that causes a turbulent flow and that the gas flow becomes a laminar flow.
  • the discharge ignition operation method is not limited to the above method, and after preparing for supply of discharge gas and power supply, a high voltage impulse of 20 kV to 25 kV on the piezoelectric transformer or the secondary side of the coil is separated from the tip of the inner conductor 16 by about 10 mm. Discharge ignition may be performed by generating at a different position. By using such a method, a plasma needle can be generated at a low cost.
  • the size of the plasma needle 14 varies depending on the gas flow rate and the microwave input. For example, when the microwave input is 10 W, the length of the plasma needle 14 is about 10 mm and the diameter is about 2 to 3 mm.
  • the tip of the plasma needle 14 is at a low temperature (non-thermal equilibrium state), and in the case of 10 W, it is about 150 ° C. or less and 5 W is about 60 ° C. or less.
  • the microwave oscillator input is increased, the temperature of the exhaust gas can be lowered by making the alumina tube 13 longer.
  • the ion species and electrons recombine to change into a neutral gas flow (remote plasma 14a) containing a large amount of highly reactive excited species. Since the microwave cannot propagate through the remote plasma, the microwave can be prevented from leaking to the outside.
  • the surface of the IC package 2 is irradiated with the remote plasma 14a.
  • the remote plasma 14a containing a large amount of active oxygen is irradiated onto the epoxy resin of the IC package 2, the epoxy resin is decomposed into H 2 O and CO 2 and etched.
  • the active oxygen includes O radicals, but other active species such as ozone may be included.
  • the plasma needle 14 grows by the microwave propagating along the surface of the plasma needle 14 formed at the tip 16t of the inner conductor 16 ionizing the supply gas. Part of the microwave power is radiated to the periphery of the propagation path, causing microwave leakage and disturbing the operation of the surrounding electronic equipment, so it is desirable to cut it off.
  • the tip of the inner conductor 16 is present in the portion covered with the outer conductor 15, so that the microwave propagating through the inner conductor 16 is radiated around the inner conductor 16. Can be prevented. Further, the plasma needle disappears near the tip of the outer conductor 15, and the remote plasma 14a (neutral gas, etching gas) is present in the space up to the opening 13t of the alumina tube 13, so that the microwaves go beyond that. Propagation is not possible, and microwave leakage toward the distal end of the internal conductor 16 can be strongly suppressed, and malfunction of peripheral electronic devices can be prevented.
  • the remote plasma 14a neutral gas, etching gas
  • the atmospheric pressure plasma needle generator 100 When the plasma needle 14 (remote plasma 14a) is generated, the atmospheric pressure plasma needle generator 100 is moved down in the Z-axis direction and brought close to the IC package 2 fixed to the XY stage 1, and the surface of the IC package 2 is When the distance from the opening 13t of the alumina tube 13 is constant, the distance is fixed in the Z-axis direction, and the surface of the IC package 2 is irradiated with the remote plasma 14a.
  • the remote plasma containing a large amount of active oxygen is irradiated onto the epoxy resin of the IC package 2, the epoxy resin is decomposed into H 2 O and CO 2 and etched (S101).
  • a part of the epoxy resin of the IC package 2 can be etched with active oxygen, but the silica filler constituting 70% or more of the epoxy resin of the IC package 2 is not etched with active oxygen.
  • the surface of the package becomes white with silica filler in about 3 to 10 minutes after irradiation.
  • ultrasonic cleaning is performed to remove the silica filler from the package surface.
  • the IC package 2 is moved directly below the ultrasonic cleaning unit 4, and at the same time, the ultrasonic cleaning unit 4 is moved downward to approach the IC package 2.
  • Water is introduced from the water introduction pipe 19 connected to the ultrasonic cleaning section 4 and when several drops are dropped on the surface of the IC package 2, the water is held on the IC package 2 by surface tension.
  • the ultrasonic cleaning is started by the vibration of the ultrasonic vibrator of the ultrasonic cleaning unit 4 in a state where the ultrasonic cleaning unit 4 and water droplets on the surface of the IC package 2 are in contact with each other.
  • the silica filler is peeled from the IC package 2 by ultrasonic cleaning for about 5 to 10 seconds.
  • the IC package 2 from which the water droplets have been removed is moved directly below the CCD camera 3, and the surface state is observed by the PC 10 (S105).
  • the opening operation is terminated.
  • FIG. 3A shows an Ar flow rate of 2.5 Pa ⁇ m 3 / sec (1500 sccm) and an O 2 flow rate of 0.076 Pa ⁇ m 3 / sec (45 sccm) for a silver wire having a diameter of 0.5 mm and 100% silver. It is the photograph which image
  • FIG. 3B is a photograph taken using an optical microscope after further ultrasonic cleaning
  • FIG. 3C is an SEM photograph after further ultrasonic cleaning.
  • 4A to 4D are SEM photographs obtained by photographing the silver wire after being irradiated with the gas under the above conditions (see the scale in the photograph for the scale).
  • FIGS. 5A to 5C show an Ar flow rate of 2.5 Pa ⁇ m 3 / sec (1500 sccm) and an O 2 flow rate of 0.076 Pa ⁇ m 3 for a silver wire having a diameter of 0.5 mm and 100% silver.
  • This is a photograph of the silver wire after ultrasonic cleaning by irradiating a gas with a flow rate of 0.025 Pa ⁇ m 3 / sec (15 sccm) for 30 minutes / sec (45 sccm) and H 2 (scale is a photograph) (See the scale inside.)
  • the silver wire after etching with Ar, O 2 , H 2 gases remains metallic and remains silver. It can be seen that there is no black soot (silver oxide) visible to the naked eye, and the silver wire is not damaged. Referring to the enlarged SEM photograph, only a very small silver oxide crystal is present, and almost no silver oxide is formed. As described above, when an IC package using a silver wire is opened, etching with Ar, O 2 , or H 2 gas can prevent the silver wire from being oxidized and damaged.
  • the flow rate of Ar, O 2 , H 2 when opening an IC package using a silver wire is not limited to the above example.
  • the flow rate of Ar is 1.7 to 3.4 Pa ⁇ m 3 / sec ( 1000 to 2000 sccm)
  • the flow rate of O 2 is 0.008 to 0.08 Pa ⁇ m 3 / sec (5 to 50 sccm)
  • the flow rate of H 2 is 0.008 to 0.03 Pa ⁇ m 3 / sec (5 to 20 sccm).
  • a mixed gas may be used.
  • the etching rate can be increased by adding CF 4 to Ar and O 2 gases.
  • the flow rate of Ar is 1.7 to 3.4 Pa ⁇ m 3 / sec (1000 to 2000 sccm)
  • the flow rate of O 2 is 0.008 to 0.08 Pa ⁇ m 3 / sec (5 to 50 sccm)
  • CF 4 The flow rate may be 0.008 to 0.08 Pa ⁇ m 3 / sec (5 to 50 sccm).
  • FIG. 6 is an overall view of a semiconductor integrated circuit package unsealing apparatus using the atmospheric pressure plasma needle generator according to the second embodiment of the present invention.
  • 7 and 8 are diagrams showing examples of the shape of the guide.
  • the atmospheric pressure plasma needle generator 300 of the present invention includes a guide 12, an alumina tube 13, an outer conductor 15, an inner conductor 16, a gas introduction pipe 17, and an SMA connector 18.
  • the configuration is the same as that of the first embodiment except that the guide 12 is provided.
  • the guide 12 forms a flow path of the remote plasma 14a coming out from the opening 13t of the alumina tube 13 with the XY stage 1 (see FIG. 1A) on which an object to be etched is placed, and the remote plasma 14a is placed outside. And a gas flow path control surface 12a for irradiating the object to be etched with the remote plasma 14a on a wide surface.
  • the guide 12 may be connected to the alumina tube at a connection portion 12b with the alumina tube 13, and may include a cylindrical portion 12c and a gas flow path control surface 12a.
  • the guide 12 may be formed in a columnar shape as shown in FIG. 7, and as shown in FIG. 8, the inner diameter gradually increases from the outlet of the alumina tube 13, and the opening area of the opening 12d of the guide 12 However, you may form in cone shape so that it may become larger than the opening area of the opening part of the alumina tube 13.
  • FIG. The shape of the guide 12 is not limited to this, and the XY stage 1 (FIG. 1A) on which the etching gas flow is designed to flow so as to wash the IC chip surface uniformly while maintaining the laminar flow state, and the object to be etched is mounted thereon.
  • the flow path of the remote plasma 14a that emerges from the opening 13t of the alumina tube 13 is formed, and the remote plasma 14a may be spread outward.
  • the procedure for opening the semiconductor integrated circuit package using the atmospheric pressure plasma needle generator 300 using the guide 12 is the same as that of the semiconductor integrated circuit package using the atmospheric pressure plasma needle generator 100 described above, except as described below.
  • the procedure of opening the semiconductor integrated circuit package by the opening device 200 is the same.
  • a guide 12 is provided in the opening 13 t of the alumina tube 13.
  • the gas injected from the gas introduction pipe 17 passes through the alumina tube 13 and is discharged from the guide 12.
  • the atmospheric pressure plasma needle generator 300 is lowered in the Z-axis direction to approach the IC package 2, and the distance between the surface of the IC package 2 and the guide 12 is a predetermined distance. When it reaches, it is fixed in the Z-axis direction, and the surface of the IC package 2 is irradiated with the remote plasma 14a.
  • FIG. 9A is a photograph taken before opening the IC package with a mixed gas of Ar and O 2 without attaching the guide of the second embodiment of the present invention.
  • FIG. 9B shows a mixed gas of Ar and O 2 (the flow rate of Ar is 2.4 Pa ⁇ m 3 / sec (1440 sccm), the flow rate of O 2 is 0.01 Pa ⁇ m without attaching the guide of the second embodiment of the present invention. It is the photograph which image
  • FIG. 9C shows a mixed gas of Ar and O 2 (Ar flow rate: 2.4 Pa ⁇ m 3 / sec (1440 sccm), O 2 flow rate: 0.01 Pa ⁇ m without attaching the guide of the second embodiment of the present invention. It is the photograph which image
  • FIG. 10A is a photograph taken before attaching the guide of the second embodiment of the present invention and opening the IC package with a mixed gas of Ar and O 2 .
  • FIG. 10B shows a second embodiment of the present invention with a guide attached thereto, and a mixed gas of Ar and O 2 (Ar flow rate 2.4 Pa ⁇ m 3 / sec (1440 sccm), O 2 flow rate 0.01 Pa ⁇ m 3 / It is the photograph which image
  • FIG. 10B shows a second embodiment of the present invention with a guide attached thereto, and a mixed gas of Ar and O 2 (Ar flow rate 2.4 Pa ⁇ m 3 / sec (1440 sccm), O 2 flow rate 0.01 Pa ⁇ m 3 / It is the photograph which image
  • 10C shows a second embodiment of the present invention with a guide and a mixed gas of Ar and O 2 (Ar flow rate 2.4 Pa ⁇ m 3 / sec (1440 sccm), O 2 flow rate 0.01 Pa ⁇ m 3 / It is the photograph which image
  • the atmospheric pressure plasma needle generator 300 does not allow air to enter from the outside to the surface of the IC package 2 to be etched by attaching the guide 12 having the above-described shape, and uniformly chips. Since the surface is irradiated with active oxygen, the etching area can be increased. Since the etching gas can flow uniformly on the surface of the IC chip without waste, it is possible to cleanly etch the lower part of the bonding wire. In addition, the etching rate can be increased.
  • the remote plasma 14a spreads in a plane shape away from the plasma needle generating portion and is irradiated onto the surface of the IC package 2, so that irradiation is performed at a point without attaching the guide 12. Since it is possible to irradiate plasma at a temperature lower than that of the case, and the influence of the microwave on the IC chip can be reduced, damage to the IC chip due to temperature and microwave can be reduced.
  • the plasma needle generator of the present invention is used, and the same applies to the case where the IC package is opened using a general atmospheric pressure plasma generator. That is, even when the IC package is opened using a general atmospheric pressure plasma generator other than the plasma needle generator of the present invention, the guide 12 having the above-described shape can be attached to cleanly clean the lower part of the bonding wire. In addition, the etching rate can be increased, and damage to the IC chip due to temperature and microwaves can be reduced.
  • FIG. 11 is a view showing an atmospheric pressure plasma needle generator according to a third embodiment of the present invention.
  • the atmospheric pressure plasma needle generator 500 of this embodiment includes a heater 21, a guide 12, an alumina tube 13, an outer conductor 15, an inner conductor 16, a gas introduction pipe 17, and an SMA connector 18. Except for the point provided with the heater 21, it is the same as that of the structure of 2nd Example.
  • the heater 21 is arranged at a place where the IC package 2 can be heated below the IC package 2 and heats the IC package 2.
  • the heater 21 is controlled by the PC 10 and is maintained in a range of about 200 ° C. to 400 ° C. In this case, the PC 10 operates as a temperature controller.
  • the procedure for opening the semiconductor integrated circuit package using the atmospheric pressure plasma needle generator 500 is the same as the procedure for opening the semiconductor integrated circuit package using the atmospheric pressure plasma needle generators 100 and 300 described above, except for the points described below. It is.
  • An IC package 2 using a silver wire is placed on the heater 21 of the XY stage 1 (see FIG. 1A) disposed opposite to the atmospheric pressure plasma needle generator 500.
  • the heater 21 heats the IC package 2 while being maintained at a constant temperature in the range of about 200 ° C. to 400 ° C. by the PC 10.
  • the IC package is opened by irradiating plasma generated using a mixed gas of Ar and O 2 according to the procedure of the first embodiment or the second embodiment.
  • the silver wire Since silver oxide is decomposed into silver and oxygen at about 200 ° C. to 300 ° C., the silver wire is not oxidized by oxygen plasma at a high temperature of about 200 ° C. to 400 ° C., and damage can be prevented. Therefore, according to the atmospheric pressure plasma needle generator 500, when opening the IC package 2 in which the silver wire is used, the silver wire is oxidized using only a mixed gas of Ar and O 2 without using H 2 gas. Can be opened while preventing.
  • the plasma needle generator of the present invention is used, and the same applies to the case where the IC package is opened using a general atmospheric pressure plasma generator. That is, even when the IC package is opened using a general atmospheric pressure plasma generator other than the plasma needle generator of the present invention, the opening operation is performed in a state where the IC package is heated by the heater as described above. By doing so, when opening an IC package using a silver wire, it is possible to open the package while preventing oxidation of the silver wire using only a mixed gas of Ar and O 2 without using H 2 gas.
  • the present embodiment is not limited to the example described above, and may be opened using a mixed gas of Ar, O 2 and H 2 .
  • Atmospheric pressure plasma needle generator 200 Semiconductor integrated circuit package unsealing apparatus 1 using an atmospheric pressure plasma needle generator 1 XY stage 2 IC package 3 CCD camera 4 Ultrasonic cleaning unit 6 Auto tuner 7 Mass flow controller 8 Micro Wave oscillator 9 Gas cylinder 10 PC 12 Guide 13 Alumina tube 13 t Opening 14 of alumina tube 13 Plasma needle 14 a Remote plasma 15 External conductor 15 t Opening end 16 of external conductor 16 Inner conductor 16 t End of internal conductor 17 Gas introduction pipe 18 SMA connector 19 Water introduction pipe 20 Air introduction Tube 21 heater

Abstract

[Problem] To provide an atmospheric pressure plasma needle generating device and a method for unsealing a semiconductor integrated circuit package using the atmospheric pressure plasma needle. [Solution] Provided is an atmospheric pressure plasma needle generating device that is provided with: a tube-shaped insulator for which gas is introduced to the interior from a gas introduction unit, having an opening at one end; a tube-shaped external conductor placed on the outside of the tube-shaped insulator; and an internal conductor placed inside the tube-shaped insulator, having a tip part covered by the external conductor. Using the microwaves propagated with the insulator, the internal conductor, and the external conductor as waveguides and the gas introduced from the gas introduction unit, the atmospheric pressure plasma needle generating device generates a filament-form plasma needle between the tip part of the internal conductor and the opening of the tube-shaped insulator.

Description

大気圧プラズマニードル発生装置及び大気圧プラズマニードルを用いた半導体集積回路パッケージの開封装置及び方法。Atmospheric pressure plasma needle generating apparatus and semiconductor integrated circuit package unsealing apparatus and method using atmospheric pressure plasma needle
　本発明は、大気圧プラズマニードル発生装置及び大気圧プラズマニードルを用いた半導体集積回路パッケージの開封装置及び方法に関する。 The present invention relates to an atmospheric pressure plasma needle generator and a semiconductor integrated circuit package unsealing apparatus and method using the atmospheric pressure plasma needle.
　従来、ＩＣパッケージの開封（エポキシ樹脂の除去）には、マイクロ波空洞共振器によって生成したプラズマ（例えば特許文献１）、レーザーとプラズマの組み合わせ（例えば特許文献２）、又は誘導結合型放電プラズマにより生成されたプラズマ（例えば特許文献３）が用いられてきた。 Conventionally, an IC package is opened (removal of epoxy resin) by plasma generated by a microwave cavity resonator (for example, Patent Document 1), a combination of laser and plasma (for example, Patent Document 2), or inductively coupled discharge plasma. Generated plasma (for example, Patent Document 3) has been used.
　しかし、これらの手段によると、エポキシ樹脂を分解できるだけの密度の高い、低温のラジカル原子を「低電力」で生成することが困難である。また、これらの手段によると、マイクロ波が外部に漏えいしてしまい、ＩＣチップその他周囲の電子機器に悪影響を与えてしまう可能性が高いという不都合がある。 However, according to these means, it is difficult to generate a low-temperature radical atom having a density high enough to decompose the epoxy resin with “low power”. In addition, according to these means, the microwave leaks to the outside, and there is a disadvantage that there is a high possibility that the IC chip and other surrounding electronic devices are adversely affected.
また、近年、ＩＣチップのボンディングワイヤには、従来の金または銅に代わって、銀が用いられ始めてきている。金線または銅線を用いたＩＣチップの開封（エポキシ樹脂の除去）には活性酸素が有効であり、処理時間と温度において実用レベルの装置が開発されている。 In recent years, silver has begun to be used in place of conventional gold or copper as bonding wires for IC chips. Active oxygen is effective for opening an IC chip (removal of epoxy resin) using a gold wire or a copper wire, and a device at a practical level has been developed in terms of processing time and temperature.
しかし、銀は酸化しやすい金属であり、酸化力の強い活性酸素は銀ワイヤに致命的な損傷を招くため、従来の開封方法は使用困難な状況に置かれている。 However, silver is a metal that easily oxidizes, and active oxygen having strong oxidizing power causes fatal damage to the silver wire, so that the conventional opening method is in a difficult situation to use.
また、従来の開封方法によると、エポキシ樹脂の除去の効率が良くないという問題点もある。 Further, according to the conventional opening method, there is a problem that the efficiency of removing the epoxy resin is not good.
国際公開第２０１３／１８４０００号International Publication No. 2013/184000 米国特許第８５５５７２８号明細書US Pat. No. 8,555,728 米国特許出願公開第２０１５／０１１８８５６号明細書US Patent Application Publication No. 2015/0118856
　そこで、本発明は、マイクロ波が外部に漏えいすることを防ぎ、低電力かつ低温でエポキシ樹脂を分解できるだけの密度の高いラジカル原子を生成することを目的とする。 Therefore, an object of the present invention is to prevent a microwave from leaking to the outside and generate a radical atom having a density high enough to decompose an epoxy resin at low power and low temperature.
本発明の実施形態にかかる大気圧プラズマニードル発生装置は、ガス導入部から内部にガスが導入され、一端に開口部を有するチューブ形状の絶縁体と、前記チューブ形状の絶縁体の外側に配置されるチューブ形状の外部導体と、前記チューブ形状の絶縁体の内側に配置され、前記外部導体に覆われた先端部を有する内部導体と、を備え、前記絶縁体、前記内部導体、及び前記外部導体を導波路として伝搬するマイクロ波及び前記ガス導入部から導入されるガスを用いて前記内部導体の先端部と前記チューブ形状の絶縁体の開口部との間にフィラメント状のプラズマニードルを発生させる。 An atmospheric pressure plasma needle generator according to an embodiment of the present invention includes a tube-shaped insulator in which a gas is introduced from a gas introduction portion and has an opening at one end, and is disposed outside the tube-shaped insulator. A tube-shaped outer conductor, and an inner conductor disposed inside the tube-shaped insulator and having a tip portion covered with the outer conductor, the insulator, the inner conductor, and the outer conductor A filament-shaped plasma needle is generated between the tip of the inner conductor and the opening of the tube-shaped insulator using a microwave propagating as a waveguide and a gas introduced from the gas introduction portion.
　本発明の実施形態にかかる大気圧プラズマニードル発生装置において、前記内部導体の先端部より外側に前記外部導体の先端が位置し、前記外部導体の先端より外側に前記チューブ形状の絶縁体の開口部が位置してもよい。 In the atmospheric pressure plasma needle generator according to the embodiment of the present invention, the tip of the outer conductor is located outside the tip of the inner conductor, and the opening of the tube-shaped insulator is located outside the tip of the outer conductor. May be located.
　本発明の実施形態にかかる大気圧プラズマニードル発生装置において、前記外部導体の直径は、マイクロ波の波長の１/２以下の長さであってもよい。 In the atmospheric pressure plasma needle generator according to the embodiment of the present invention, the diameter of the outer conductor may be 1/2 or less of the wavelength of the microwave.
　本発明の実施形態にかかる大気圧プラズマニードル発生装置において、前記ガスはアルゴン及び酸素を含んでもよい。 In the atmospheric pressure plasma needle generator according to the embodiment of the present invention, the gas may contain argon and oxygen.
　本発明の実施形態にかかる大気圧プラズマニードル発生装置において、前記ガスは水素を含んでもよい。 In the atmospheric pressure plasma needle generator according to the embodiment of the present invention, the gas may contain hydrogen.
　本発明の実施形態にかかる大気圧プラズマニードル発生装置において、前記ガスは四フッ化炭素を含んでもよい。 In the atmospheric pressure plasma needle generator according to the embodiment of the present invention, the gas may include carbon tetrafluoride.
本発明の実施形態にかかる大気圧プラズマニードル発生装置において、前記チューブ形状の絶縁体の開口部に、前記開口部から放出されるガスを外側に広げるガス流路制御面を含むガイドを備えてもよい。 In the atmospheric pressure plasma needle generator according to the embodiment of the present invention, a guide including a gas flow path control surface that spreads gas released from the opening to the outside may be provided in the opening of the tube-shaped insulator. Good.
本発明の実施形態にかかる大気圧プラズマニードル発生装置において、前記ガイドの開口部の開口面積は、前記チューブ形状の絶縁体の開口部の開口面積よりも大きくてもよい。 In the atmospheric pressure plasma needle generator according to the embodiment of the present invention, the opening area of the opening of the guide may be larger than the opening area of the opening of the tube-shaped insulator.
本発明の実施形態にかかる半導体集積回路パッケージの開封装置は，本発明の実施形態にかかる大気圧プラズマニードル発生装置、及び、前記チューブ形状の絶縁体の開口部と対向する位置に半導体集積回路パッケージを配置するステージを備える。 An opening device for a semiconductor integrated circuit package according to an embodiment of the present invention includes an atmospheric pressure plasma needle generator according to an embodiment of the present invention, and a semiconductor integrated circuit package at a position facing the opening of the tube-shaped insulator. The stage which arranges is provided.
本発明の実施形態にかかる半導体集積回路パッケージの開封装置は，前記ステージの温度を調節する温度調節部を有してもよい。 The opening device of the semiconductor integrated circuit package according to the embodiment of the present invention may include a temperature adjusting unit that adjusts the temperature of the stage.
　本発明の実施形態にかかる大気圧プラズマニードルを用いた半導体集積回路パッケージの開封方法は，本発明の実施形態にかかる大気圧プラズマニードル発生装置に半導体集積回路パッケージを配置し、前記プラズマニードルを発生させ、前記プラズマニードルが前記絶縁体の開口部に向かって進む過程で変化した中性ガスであるリモートプラズマを前記半導体集積回路パッケージに照射する。 A method for opening a semiconductor integrated circuit package using an atmospheric pressure plasma needle according to an embodiment of the present invention includes: arranging the semiconductor integrated circuit package in the atmospheric pressure plasma needle generator according to the embodiment of the present invention; and generating the plasma needle. Then, the semiconductor integrated circuit package is irradiated with remote plasma, which is a neutral gas changed in the process in which the plasma needle advances toward the opening of the insulator.
　本発明の実施形態にかかる大気圧プラズマニードルを用いた半導体集積回路パッケージの開封方法において，前記大気圧プラズマニードル発生装置は、前記チューブ形状の絶縁体の開口部と対向する位置に前記半導体集積回路パッケージを配置するステージを備えてもよい。 In the method of opening a semiconductor integrated circuit package using an atmospheric pressure plasma needle according to an embodiment of the present invention, the atmospheric pressure plasma needle generator is located at a position facing the opening of the tube-shaped insulator. You may provide the stage which arrange | positions a package.
本発明の実施形態にかかる大気圧プラズマニードルを用いた半導体集積回路パッケージの開封方法は，前記半導体集積回路パッケージを２００℃乃至４００℃に加熱することを含んでもよい。 A method of opening a semiconductor integrated circuit package using an atmospheric pressure plasma needle according to an embodiment of the present invention may include heating the semiconductor integrated circuit package to 200 ° C. to 400 ° C.
本発明の他の実施形態にかかる大気圧プラズマニードルを用いた半導体集積回路パッケージの開封方法は，マイクロ波及びガスを用いてフィラメント状のプラズマニードルを発生させ、前記プラズマニードルを半導体集積回路パッケージに照射することを含み、前記照射によって前記半導体集積回路パッケージに用いられている半導体集積回路、ボンディングワイヤ及びボンディングパッドが露出するまで前記半導体集積回路パッケージをエッチングする。 According to another embodiment of the present invention, a method for opening a semiconductor integrated circuit package using an atmospheric pressure plasma needle generates a filament-shaped plasma needle using a microwave and a gas, and the plasma needle is formed into a semiconductor integrated circuit package. The semiconductor integrated circuit package is etched until the semiconductor integrated circuit, bonding wires, and bonding pads used in the semiconductor integrated circuit package are exposed by the irradiation.
　本発明の他の実施形態にかかる大気圧プラズマニードルを用いた半導体集積回路パッケージの開封方法において，前記ガスはアルゴン及び酸素を含んでもよい。 In the method for opening a semiconductor integrated circuit package using an atmospheric pressure plasma needle according to another embodiment of the present invention, the gas may contain argon and oxygen.
　本発明の他の実施形態にかかる大気圧プラズマニードルを用いた半導体集積回路パッケージの開封方法において，前記ガスは水素を含んでもよい。 In the method for opening a semiconductor integrated circuit package using an atmospheric pressure plasma needle according to another embodiment of the present invention, the gas may contain hydrogen.
　本発明の他の実施形態にかかる大気圧プラズマニードルを用いた半導体集積回路パッケージの開封方法において，前記ガスは四フッ化炭素を含んでもよい。 In the method for opening a semiconductor integrated circuit package using an atmospheric pressure plasma needle according to another embodiment of the present invention, the gas may contain carbon tetrafluoride.
本発明の他の実施形態にかかる大気圧プラズマニードルを用いた半導体集積回路パッケージの開封方法は，前記半導体集積回路パッケージを２００℃乃至４００℃に加熱することを含んでもよい。 A method of opening a semiconductor integrated circuit package using an atmospheric pressure plasma needle according to another embodiment of the present invention may include heating the semiconductor integrated circuit package to 200 ° C. to 400 ° C.
　本発明の他の実施形態にかかる大気圧プラズマニードルを用いた半導体集積回路パッケージの開封方法は，所定時間の前記照射の後、前記半導体集積回路パッケージを超音波で洗浄し、前記半導体集積回路パッケージの表面状態をカメラで撮影し、撮影した結果に基づいて前記半導体集積回路、ボンディングワイヤ及びボンディングパッドが露出されていないと判定した場合にはさらに前記照射を行うことを含んでもよい。 According to another embodiment of the present invention, there is provided a method of opening a semiconductor integrated circuit package using an atmospheric pressure plasma needle. After the irradiation for a predetermined time, the semiconductor integrated circuit package is cleaned with ultrasonic waves, and the semiconductor integrated circuit package is used. If the surface state of the film is photographed with a camera and it is determined that the semiconductor integrated circuit, the bonding wire, and the bonding pad are not exposed based on the photographed result, the irradiation may be further performed.
本発明の他の実施形態にかかる半導体集積回路パッケージの開封装置は，本発明の実施形態にかかる大気圧プラズマニードルを用いた半導体集積回路パッケージの開封方法を実行するための半導体集積回路パッケージの開封装置であってもよい。 A semiconductor integrated circuit package unsealing apparatus according to another embodiment of the present invention is a semiconductor integrated circuit package unsealing method for performing a method of unsealing a semiconductor integrated circuit package using an atmospheric pressure plasma needle according to an embodiment of the present invention. It may be a device.
本発明によれば、マイクロ波が外部に漏えいすることを防ぎ、低電力かつ低温でエポキシ樹脂を分解できるだけの密度の高いラジカル原子を生成することができる。 According to the present invention, it is possible to prevent the microwave from leaking to the outside, and to generate radical atoms having a density high enough to decompose the epoxy resin at low power and low temperature.
本発明の第１実施形態による大気圧プラズマニードル発生装置を用いた半導体集積回路パッケージの開封装置の全体図を示したものである。1 is an overall view of a semiconductor integrated circuit package unsealing apparatus using an atmospheric pressure plasma needle generating apparatus according to a first embodiment of the present invention. 本発明の第１実施形態による大気圧プラズマニードル発生装置を用いた半導体集積回路パッケージの開封方法のフローチャートを示した図である。It is the figure which showed the flowchart of the opening method of the semiconductor integrated circuit package using the atmospheric pressure plasma needle generator by 1st Embodiment of this invention. 本発明の第１実施形態による大気圧プラズマニードル発生装置を示した図である。It is the figure which showed the atmospheric pressure plasma needle generator by 1st Embodiment of this invention. Ａｒ及びＯ２の混合ガスを３０分間照射した後の銀ワイヤを撮影した写真である。Is a photograph of the silver wire after irradiation for 30 min Ar and a mixed gas of O 2. Ａｒ及びＯ２の混合ガスを３０分間照射し超音波洗浄を行った後の銀ワイヤを光学顕微鏡を使用して撮影した写真である。Ar and a mixed gas of O 2 was irradiated for 30 minutes of silver wire was subjected to ultrasonic cleaning is a photograph taken using an optical microscope. Ａｒ及びＯ２の混合ガスを３０分間照射し超音波洗浄を行った後の銀ワイヤを撮影したＳＥＭ写真である。Ar and a mixed gas of O 2 was irradiated for 30 minutes is a SEM photograph of the silver wire was subjected to ultrasonic cleaning. Ａｒ及びＯ２の混合ガスを３０分間照射した後の銀ワイヤを撮影したＳＥＭ写真である。The silver wire was irradiated for 30 min Ar and a mixed gas of O 2 is an SEM photograph taken. Ａｒ及びＯ２の混合ガスを３０分間照射した後の銀ワイヤを撮影したＳＥＭ写真である。The silver wire was irradiated for 30 min Ar and a mixed gas of O 2 is an SEM photograph taken. Ａｒ及びＯ２の混合ガスを３０分間照射した後の銀ワイヤを撮影したＳＥＭ写真である。The silver wire was irradiated for 30 min Ar and a mixed gas of O 2 is an SEM photograph taken. Ａｒ及びＯ２の混合ガスを３０分間照射した後の銀ワイヤを撮影したＳＥＭ写真である。The silver wire was irradiated for 30 min Ar and a mixed gas of O 2 is an SEM photograph taken. Ａｒ、Ｏ２及びＨ２の混合ガスを３０分間照射し超音波洗浄を行った後の銀ワイヤを撮影した写真である。Ar, it is a photograph of the silver wire after the irradiation with a gas mixture of O 2 and H 2 30 minutes ultrasonic washing. Ａｒ、Ｏ２及びＨ２の混合ガスを３０分間照射した後の銀ワイヤを撮影したＳＥＭ写真である。Ar, is a SEM photograph of silver wire was photographed after irradiation with a gas mixture of O 2 and H 2 30 minutes. Ａｒ、Ｏ２及びＨ２の混合ガスを３０分間照射した後の銀ワイヤを撮影したＳＥＭ写真である。Ar, is a SEM photograph of silver wire was photographed after irradiation with a gas mixture of O 2 and H 2 30 minutes. 本発明の第２実施形態による大気圧プラズマニードル発生装置を示した図である。It is the figure which showed the atmospheric pressure plasma needle generator by 2nd Embodiment of this invention. 本発明の第２実施形態のガイドの例を示した図である。It is the figure which showed the example of the guide of 2nd Embodiment of this invention. 本発明の第２実施形態のガイドの例を示した図である。It is the figure which showed the example of the guide of 2nd Embodiment of this invention. 本発明の第２実施形態のガイドを取り付けずにＡｒ及びＯ２の混合ガスでＩＣパッケージを開封する前に撮影した写真である。Without attaching the guide to a second embodiment of the present invention is a photograph taken before opening the IC package with a mixed gas of Ar and O 2. 本発明の第２実施形態のガイドを取り付けずに、Ａｒ及びＯ２の混合ガスで２５分間ＩＣパッケージをエッチングした様子を撮影した写真である。Without attaching the guide of the second embodiment of the present invention, it is a photograph of a state in which etching for 25 minutes the IC package with a mixed gas of Ar and O 2. 本発明の第２実施形態のガイドを取り付けずに、Ａｒ及びＯ２の混合ガスで５０分間ＩＣパッケージをエッチングした様子を撮影した写真である。Without attaching the guide of the second embodiment of the present invention, it is a photograph of a state in which etching for 50 minutes the IC package with a mixed gas of Ar and O 2. 本発明の第２実施形態のガイドを取り付け、Ａｒ及びＯ２の混合ガスでＩＣパッケージを開封する前に撮影した写真である。It is a photograph taken before attaching the guide of the second embodiment of the present invention and opening the IC package with a mixed gas of Ar and O 2 . 本発明の第２実施形態のガイドを取り付け、Ａｒ及びＯ２の混合ガスで２５分間ＩＣパッケージをエッチングした様子を撮影した写真である。Attaching a guide of a second embodiment of the present invention, it is a photograph of a state in which etching for 25 minutes the IC package with a mixed gas of Ar and O 2. 本発明の第２実施形態のガイドを取り付け、Ａｒ及びＯ２の混合ガスで５０分間ＩＣパッケージをエッチングした様子を撮影した写真である。Attaching a guide of a second embodiment of the present invention, it is a photograph of a state in which etching for 50 minutes the IC package with a mixed gas of Ar and O 2. 本発明の第３実施形態による大気圧プラズマニードル発生装置を示した図である。It is the figure which showed the atmospheric pressure plasma needle generator by 3rd Embodiment of this invention.
　以下、本発明の実施形態に係る大気圧プラズマニードル発生装置及び大気圧プラズマニードルを用いた半導体集積回路パッケージの開封装置及び方法について、図面を参照しながら詳細に説明する。なお、実施形態は本発明の例を示したものであり、本発明は、明示した実施形態に限定されるものではない。 Hereinafter, an atmospheric pressure plasma needle generator and a semiconductor integrated circuit package unsealing apparatus and method using the atmospheric pressure plasma needle according to an embodiment of the present invention will be described in detail with reference to the drawings. The embodiments show examples of the present invention, and the present invention is not limited to the explicitly described embodiments.
（第１実施形態）
　図１Ａは、本発明の第１実施形態による大気圧プラズマニードル発生装置を用いた半導体集積回路パッケージの開封装置の全体図を示したものである。 (First embodiment)
FIG. 1A shows an overall view of a semiconductor integrated circuit package unsealing apparatus using an atmospheric pressure plasma needle generator according to a first embodiment of the present invention.
　大気圧プラズマニードル発生装置１００を用いた半導体集積回路パッケージの開封装置２００は、ＸＹステージ１、ＩＣパッケージ２、ＣＣＤカメラ３、超音波洗浄部４、大気圧プラズマニードル発生装置１００、オートチューナー６、マスフローコントローラー７、マイクロ波発振器８、ガスボンベ９、ＰＣ１０、水導入管１９、及び空気導入管２０を備える。 The semiconductor integrated circuit package unsealing apparatus 200 using the atmospheric pressure plasma needle generator 100 includes an XY stage 1, an IC package 2, a CCD camera 3, an ultrasonic cleaning unit 4, an atmospheric pressure plasma needle generator 100, an auto tuner 6, A mass flow controller 7, a microwave oscillator 8, a gas cylinder 9, a PC 10, a water introduction pipe 19, and an air introduction pipe 20 are provided.
ガスボンベ９には、プラズマ化されるガスが充填されている。例えば、ガスボンベ９に充填されるガスは、アルゴン（Ａｒ）、酸素（Ｏ２）、水素（Ｈ２）、四フッ化炭素（ＣＦ４）などであってもよい。ガスボンベ９に充填されたプラズマを生成するガスは、マスフローコントローラー７を経由して、大気圧プラズマニードル発生装置１００に注入される。各ガスの流量はＰＣ１０に接続されたマスフローコントローラー７で制御される。 The gas cylinder 9 is filled with a gas to be converted into plasma. For example, the gas filled in the gas cylinder 9 may be argon (Ar), oxygen (O 2 ), hydrogen (H 2 ), carbon tetrafluoride (CF 4 ), or the like. A gas that generates plasma filled in the gas cylinder 9 is injected into the atmospheric pressure plasma needle generator 100 via the mass flow controller 7. The flow rate of each gas is controlled by a mass flow controller 7 connected to the PC 10.
図２にはガスボンベ９を１個設ける例を示したが、ガスボンベ９を２個以上設け、複数の種類のガスを大気圧プラズマニードル発生装置１００に注入し、混合させるようにしてもよい。例えば、銀ワイヤ以外のボンディングワイヤが用いられたＩＣパッケージを開封する場合には、ＡｒとＯ２ガスが使用されてもよく、このとき、Ａｒの流量は１．６～３．３Ｐａ・ｍ３／ｓｅｃ（１，０００～２，０００ｓｃｃｍ）、Ｏ２の流量は０．００８～０．０８Ｐａ・ｍ３／ｓｅｃ（５～５０ｓｃｃｍ）であってもよい。 Although FIG. 2 shows an example in which one gas cylinder 9 is provided, two or more gas cylinders 9 may be provided, and a plurality of types of gases may be injected into the atmospheric pressure plasma needle generator 100 and mixed. For example, when an IC package using a bonding wire other than silver wire is opened, Ar and O 2 gas may be used. At this time, the flow rate of Ar is 1.6 to 3.3 Pa · m 3. / Sec (1,000 to 2,000 sccm), and the flow rate of O 2 may be 0.008 to 0.08 Pa · m 3 / sec (5 to 50 sccm).
マイクロ波発振器８はマイクロ波を発振する。発振されたマイクロ波は同軸ケーブルでオートチューナー６、大気圧プラズマニードル発生装置１００へと導入される。例えば、マイクロ波の周波数は、２．４０～２．５０ＧＨｚ、パワーは５～２０Ｗとしてもよい。 The microwave oscillator 8 oscillates microwaves. The oscillated microwave is introduced into the auto tuner 6 and the atmospheric pressure plasma needle generator 100 through a coaxial cable. For example, the microwave frequency may be 2.40 to 2.50 GHz, and the power may be 5 to 20 W.
　大気圧プラズマニードル発生装置１００は、マイクロ波及びガスを用いてフィラメント状のプラズマニードル及びリモートプラズマを発生させる。大気圧プラズマニードル発生装置１００の詳細な構造については後述する。 The atmospheric pressure plasma needle generator 100 generates a filament-shaped plasma needle and remote plasma using a microwave and gas. The detailed structure of the atmospheric pressure plasma needle generator 100 will be described later.
ＸＹステージ１には開封対象のＩＣパッケージ２が固定されている。ＸＹステージ１のＸＹ軸方向の動き及びＺ軸方向の動きは、ＰＣ１０により制御される。 An IC package 2 to be opened is fixed to the XY stage 1. The movement in the XY axis direction and the movement in the Z axis direction of the XY stage 1 are controlled by the PC 10.
超音波洗浄部４は振動することでＩＣパッケージ２に導入された水を振動させ、ＩＣパッケージ２の超音波洗浄を行う超音波振動子を備える。水導入管１９は超音波洗浄部４に接続され、ＩＣパッケージ２に水を導入する。空気導入管２０は超音波洗浄部４に接続され、ＩＣパッケージ２に圧縮空気が送り、エアージェットの力によりシリカフィラーを含んだ水を飛ばして除去し、同時にＩＣパッケージ２の表面を乾燥させる。 The ultrasonic cleaning unit 4 includes an ultrasonic vibrator that vibrates water introduced into the IC package 2 by vibrating to perform ultrasonic cleaning of the IC package 2. The water introduction tube 19 is connected to the ultrasonic cleaning unit 4 and introduces water into the IC package 2. The air introduction tube 20 is connected to the ultrasonic cleaning unit 4, and compressed air is sent to the IC package 2, and the water containing the silica filler is blown away by the force of the air jet, and at the same time, the surface of the IC package 2 is dried.
ＣＣＤカメラ３は、ＰＣ１０でＩＣパッケージ２の表面状態を観察するのに用いられる。すなわち、ＣＣＤカメラ３を用いてＩＣパッケージ２の表面状態を撮影し、ＰＣ１０が画像データを解析して表面状態が目的の状態まで至っているかどうかを判定する。本発明はこれに限られず、ＣＣＤカメラ３で撮影された画像データをＰＣ１０に表示させた上で、ユーザが表面状態が目的の状態まで至っているかどうかの判定をしてプラズマニードルの照射を続行するか終了するかを選択するようにしてもよい。 The CCD camera 3 is used for observing the surface state of the IC package 2 with the PC 10. That is, the CCD camera 3 is used to photograph the surface state of the IC package 2, and the PC 10 analyzes the image data to determine whether the surface state has reached the target state. The present invention is not limited to this, and after the image data photographed by the CCD camera 3 is displayed on the PC 10, it is determined whether or not the surface state has reached the target state and the plasma needle irradiation is continued. It is also possible to select whether to end.
図２は、本発明の第１実施形態による大気圧プラズマニードル発生装置を示した図である。 FIG. 2 is a view showing an atmospheric pressure plasma needle generator according to the first embodiment of the present invention.
大気圧プラズマニードル発生装置１００は、アルミナチューブ１３、外部導体１５、内部導体１６、ガス導入管１７、及びＳＭＡ（Ｓｕｂ　Ｍｉｎｉａｔｕｒｅ　Ｔｙｐｅ　Ａ）コネクタ１８を備える。 The atmospheric pressure plasma needle generator 100 includes an alumina tube 13, an outer conductor 15, an inner conductor 16, a gas introduction pipe 17, and an SMA (Sub Miniature Type A) connector 18.
内部導体１６は棒状の導体であって、アルミナチューブ１３の内側に配置され、一端がＳＭＡコネクタ１８に接続され、マイクロ波が供給される。内部導体１６はマイクロ波の１／４波長の長さＬ１であってもよいがこれに限られず、外部導体１５より少し短ければ、どのような長さであってもよい。内部導体１６は外部導体１５に覆われた部分にその先端部１６ｔを有する。 The internal conductor 16 is a rod-shaped conductor, and is disposed inside the alumina tube 13. One end of the internal conductor 16 is connected to the SMA connector 18 and microwaves are supplied. The inner conductor 16 may have a length L1 of a quarter wavelength of the microwave, but is not limited thereto, and may be any length as long as it is slightly shorter than the outer conductor 15. The inner conductor 16 has a tip 16t at a portion covered with the outer conductor 15.
外部導体１５はチューブ形状の導体であって、アルミナチューブ１３の外側に配置され、接地電位に接続されている。外部導体１５の長さＬ２は、内部導体１６の長さＬ１より大きいので、内部導体１６の先端部１６ｔは外部導体１５に覆われており、外部導体１５の開放端１５ｔよりも内側に位置する。例えば、外部導体１５の長さＬ２は、内部導体１６の長さＬ１より数ｍｍ程度大きく形成し、内部導体１６の先端部１６ｔは外部導体１５の開口端１５ｔより数ｍｍ程度図面方向上部にくるように配置されてもよい。 The outer conductor 15 is a tube-shaped conductor and is disposed outside the alumina tube 13 and connected to the ground potential. Since the length L2 of the outer conductor 15 is larger than the length L1 of the inner conductor 16, the tip end portion 16t of the inner conductor 16 is covered with the outer conductor 15, and is located on the inner side of the open end 15t of the outer conductor 15. . For example, the length L2 of the outer conductor 15 is formed to be about several mm longer than the length L1 of the inner conductor 16, and the tip portion 16t of the inner conductor 16 is about several mm higher than the opening end 15t of the outer conductor 15 in the drawing direction. May be arranged as follows.
外部導体１５の直径はマイクロ波の波長の２分の１未満の長さであってもよく、それによって内部導体に伝わるマイクロ波が外部に漏洩されるのを防ぐことができる。例えば、２．４５ＧＨｚの波長は１２ｃｍなので、外部導体１５の直径は、６ｃｍ未満の長さであるとよく、本実施形態で外部導体１５の直径は１ｃｍ未満である。 The diameter of the outer conductor 15 may be less than half the wavelength of the microwave, thereby preventing the microwave transmitted to the inner conductor from leaking to the outside. For example, since the wavelength of 2.45 GHz is 12 cm, the diameter of the outer conductor 15 may be less than 6 cm. In this embodiment, the diameter of the outer conductor 15 is less than 1 cm.
アルミナチューブ１３は、内部導体１６及び外部導体１５よりも長いアルミナ管で構成され、その一端がガス導入管１７と接続され、プラズマ化されるガスが導入される。ガス導入管１７から導入されるガスの例は後述のとおりである。アルミナチューブ１３の他端は開口部１３ｔとなっており、ここからガスが放出される。アルミナチューブ１３の材質はアルミナに限定されず、絶縁体であればよい。後述するとおり、アルミナチューブ１３の先端にはガイド１２（図６参照）を設けてもよく、ガス導入管１７から注入されたガスがガイド１２（図６参照）から排出されるようにしてもよい。 The alumina tube 13 is composed of an alumina tube that is longer than the inner conductor 16 and the outer conductor 15, and one end of the alumina tube 13 is connected to the gas introduction tube 17 to introduce a gas to be converted into plasma. Examples of gas introduced from the gas introduction pipe 17 are as described below. The other end of the alumina tube 13 is an opening 13t from which gas is released. The material of the alumina tube 13 is not limited to alumina and may be an insulator. As will be described later, a guide 12 (see FIG. 6) may be provided at the tip of the alumina tube 13, and the gas injected from the gas introduction pipe 17 may be discharged from the guide 12 (see FIG. 6). .
アルミナチューブ１３、外部導体１５、及び内部導体１６は、内部導体１６の先端部１６ｔより外側に外部導体１５の開放端１５ｔが位置し、外部導体１５の開放端１５ｔより外側にアルミナチューブ１３の開口部１３ｔが位置する関係が維持される限り、ガスの流量、供給電力量、ＩＣチップの材料、構造及び大きさにより変化させてもよい。一例として、アルゴン流量が２．５Ｐａ・ｍ３／ｓｅｃ（１５００ｓｃｃｍ）、マイクロ波発振器入力が１５Ｗの場合、アルミナチューブ１３を外径６ｍｍ、内径３ｍｍ、長さ４５ｍｍとし、外部導体１５を、内径６．２ｍｍ、長さ３５～４０ｍｍとし、内部導体１６を、直径０．６～０．８ｍｍ、長さ３０～３５ｍｍの銅、モリブデン又はタングステン線としてもよい。内部導体１６の先端部１６ｔより外側に外部導体１５の開放端１５ｔが位置し、外部導体１５の開放端１５ｔより外側にアルミナチューブ１３の開口部１３ｔが位置するようにすることで、マイクロ波漏洩は強く抑制され、周辺の電子機器への誤動作を防止することができ、また、低電力かつ低温で効率的にエポキシ樹脂を分解できるだけの密度の高いラジカル原子を生成することができる。 The alumina tube 13, the outer conductor 15, and the inner conductor 16 have an open end 15 t of the external conductor 15 located outside the tip end 16 t of the internal conductor 16, and an opening of the alumina tube 13 outside the open end 15 t of the external conductor 15. As long as the relationship in which the portion 13t is located is maintained, it may be changed depending on the gas flow rate, the amount of supplied power, the material, structure, and size of the IC chip. As an example, when the argon flow rate is 2.5 Pa · m 3 / sec (1500 sccm) and the microwave oscillator input is 15 W, the alumina tube 13 has an outer diameter of 6 mm, an inner diameter of 3 mm, a length of 45 mm, and the outer conductor 15 has an inner diameter of 6 mm. The inner conductor 16 may be a copper, molybdenum or tungsten wire having a diameter of 0.6 to 0.8 mm and a length of 30 to 35 mm. Microwave leakage is achieved by positioning the open end 15t of the outer conductor 15 outside the tip end 16t of the internal conductor 16 and the opening 13t of the alumina tube 13 outside the open end 15t of the external conductor 15. Is strongly suppressed, and it is possible to prevent malfunction of peripheral electronic devices, and to generate radical atoms with a density sufficient to efficiently decompose the epoxy resin at low power and low temperature.
ＳＭＡコネクタ１８は、特性インピーダンス５０Ωの可撓性同軸ケーブルでマイクロ波発振器８（図１Ａ参照）に接続される。内部導体１６が一端でＳＭＡコネクタ１８に接続されることで、マイクロ波発振器８（図２参照）で発振されたマイクロ波がアルミナチューブ１３内に導入される。 The SMA connector 18 is connected to the microwave oscillator 8 (see FIG. 1A) by a flexible coaxial cable having a characteristic impedance of 50Ω. By connecting the inner conductor 16 to the SMA connector 18 at one end, the microwave oscillated by the microwave oscillator 8 (see FIG. 2) is introduced into the alumina tube 13.
マイクロ波電力は内部導体１６の先端にプラズマニードル１４を生成するのに使用されるが、負荷であるプラズマニードルのインピーダンスは放電状態の変化により変動しやすく、一部は反射波となる。この反射波が最小になるように、マイクロ波発振器８（図１Ａ参照）とＳＭＡコネクタ１８の間にオートチューナー６（図１Ａ参照）を挿入し、電力を自動的に制御することで、負荷のプラズマニードルへのマイクロ波電力反射損失を低減させる。 Microwave power is used to generate the plasma needle 14 at the tip of the inner conductor 16, but the impedance of the plasma needle as a load is likely to fluctuate due to changes in the discharge state, and part of it becomes a reflected wave. An auto tuner 6 (see FIG. 1A) is inserted between the microwave oscillator 8 (see FIG. 1A) and the SMA connector 18 so that this reflected wave is minimized, and the power is automatically controlled, so that the load Reduces microwave power reflection loss to the plasma needle.
アルミナチューブ１３内部にガスを供給している状態で１０～１５Ｗのマイクロ波を給電し、放電点火操作を行うと、アルミナチューブ１３内部にフィラメント状プラズマニードル１４が生成される。より詳細には、内部導体の先端部１６ｔとアルミナチューブの開口部１３ｔとの間にフィラメント状のプラズマニードル１４を発生させる。このとき、ガスの流量は、乱流を引き起こすような大きい流量は避け、ガスの流れが層流になるような流量にするとよい。 When a microwave of 10 to 15 W is supplied with a gas being supplied into the alumina tube 13 and a discharge ignition operation is performed, a filamentous plasma needle 14 is generated inside the alumina tube 13. More specifically, a filamentous plasma needle 14 is generated between the tip 16t of the inner conductor and the opening 13t of the alumina tube. At this time, the flow rate of the gas is preferably a flow rate that avoids a large flow rate that causes a turbulent flow and that the gas flow becomes a laminar flow.
放電点火操作としては、ガスを流した状態で、内部導体１６の先端部１６ｔに棒状の金属を接触させておき、低電力マイクロ波を給電後にこれを引き離す手段がある。このような方法を用いることにより、電力を要さずに放電点火をすることができる。 As the discharge ignition operation, there is a means in which a rod-shaped metal is brought into contact with the tip end portion 16t of the inner conductor 16 in a gas flow state, and this is separated after feeding a low power microwave. By using such a method, discharge ignition can be performed without requiring electric power.
放電点火操作方法は上記方法に限られず、放電ガスの供給と電力の給電の準備をした後、圧電トランスあるいはコイル２次側の２０ｋＶ～２５ｋＶの高電圧インパルスを内部導体１６の先端から１０ｍｍ程度離れた位置で発生させることによって放電点火してもよい。このような方法を用いることにより、低コストでプラズマニードルを生成することができる。 The discharge ignition operation method is not limited to the above method, and after preparing for supply of discharge gas and power supply, a high voltage impulse of 20 kV to 25 kV on the piezoelectric transformer or the secondary side of the coil is separated from the tip of the inner conductor 16 by about 10 mm. Discharge ignition may be performed by generating at a different position. By using such a method, a plasma needle can be generated at a low cost.
プラズマニードル１４の大きさはガス流量とマイクロ波入力に依存して変化する。例えば、マイクロ波入力が１０Ｗの場合、プラズマニードル１４の長さは１０ｍｍ程度、直径は２～３ｍｍ程度となる。 The size of the plasma needle 14 varies depending on the gas flow rate and the microwave input. For example, when the microwave input is 10 W, the length of the plasma needle 14 is about 10 mm and the diameter is about 2 to 3 mm.
プラズマニードル１４の先端部は低温（非熱平衡状態）であり、１０Ｗの場合は約１５０℃以下、５Ｗで約６０℃以下である。マイクロ波発振器入力を大きくする場合には、アルミナチューブ１３を長くすることで排気ガスの温度を下げることができる。 The tip of the plasma needle 14 is at a low temperature (non-thermal equilibrium state), and in the case of 10 W, it is about 150 ° C. or less and 5 W is about 60 ° C. or less. When the microwave oscillator input is increased, the temperature of the exhaust gas can be lowered by making the alumina tube 13 longer.
プラズマニードル１４はアルミナチューブ１３の出口に向かって進む過程で、イオン種及び電子が再結合して反応性の高い励起種を多く含む中性ガス流（リモートプラズマ１４ａ）に変化する。マイクロ波はリモートプラズマを伝搬できないので、マイクロ波が外部に漏洩することを防ぐことができる。 As the plasma needle 14 advances toward the outlet of the alumina tube 13, the ion species and electrons recombine to change into a neutral gas flow (remote plasma 14a) containing a large amount of highly reactive excited species. Since the microwave cannot propagate through the remote plasma, the microwave can be prevented from leaking to the outside.
プラズマニードル１４（リモートプラズマ１４ａ）が生成されると、リモートプラズマ１４ａがＩＣパッケージ２の表面に照射される。活性酸素を多く含むリモートプラズマ１４ａがＩＣパッケージ２のエポキシ樹脂に照射されると、エポキシ樹脂がＨ２ＯとＣＯ２に分解されエッチングされる。本実施形態において活性酸素にはＯラジカルが含まれるが，これ以外のオゾン等の他の活性種が含まれてもよい。 When the plasma needle 14 (remote plasma 14a) is generated, the surface of the IC package 2 is irradiated with the remote plasma 14a. When the remote plasma 14a containing a large amount of active oxygen is irradiated onto the epoxy resin of the IC package 2, the epoxy resin is decomposed into H 2 O and CO 2 and etched. In this embodiment, the active oxygen includes O radicals, but other active species such as ozone may be included.
プラズマニードル１４は、内部導体１６の先端部１６ｔに形成されるプラズマニードル１４の表面に沿って伝搬するマイクロ波が供給ガスを電離させることにより成長する。マイクロ波電力の一部は伝搬路の周辺に放射され、マイクロ波漏洩を引き起こして、周囲の電子機器の動作を乱す恐れがあるので遮断することが望ましい。 The plasma needle 14 grows by the microwave propagating along the surface of the plasma needle 14 formed at the tip 16t of the inner conductor 16 ionizing the supply gas. Part of the microwave power is radiated to the periphery of the propagation path, causing microwave leakage and disturbing the operation of the surrounding electronic equipment, so it is desirable to cut it off.
本発明の大気圧プラズマニードル発生装置１００では、内部導体１６の先端は外部導体１５に覆われている部分に存在するため、内部導体１６を伝播するマイクロ波が内部導体１６の周辺に放射されることを防ぐことができる。また、外部導体１５の先端付近でプラズマニードルが消滅し、アルミナチューブ１３の開口部１３ｔまでの空間にはリモートプラズマ１４ａ（中性ガス、エッチングガス）となっているため、マイクロ波はその先へ伝搬できず、内部導体１６の先端方向へのマイクロ波漏洩も強く抑制することができ、周辺の電子機器への誤動作を防止することができる。 In the atmospheric pressure plasma needle generator 100 of the present invention, the tip of the inner conductor 16 is present in the portion covered with the outer conductor 15, so that the microwave propagating through the inner conductor 16 is radiated around the inner conductor 16. Can be prevented. Further, the plasma needle disappears near the tip of the outer conductor 15, and the remote plasma 14a (neutral gas, etching gas) is present in the space up to the opening 13t of the alumina tube 13, so that the microwaves go beyond that. Propagation is not possible, and microwave leakage toward the distal end of the internal conductor 16 can be strongly suppressed, and malfunction of peripheral electronic devices can be prevented.
以下、図１Ａ及び図１Ｂを参照して大気圧プラズマニードル発生装置を用いた半導体集積回路パッケージの開封手順を説明する。 A procedure for opening a semiconductor integrated circuit package using the atmospheric pressure plasma needle generator will be described below with reference to FIGS. 1A and 1B.
プラズマニードル１４（リモートプラズマ１４ａ）が生成されると、大気圧プラズマニードル発生装置１００をＺ軸方向に下降し、ＸＹステージ１に固定されているＩＣパッケージ２に接近させ、ＩＣパッケージ２の表面とアルミナチューブ１３の開口部１３ｔとの距離が一定のところでＺ軸方向に固定し、リモートプラズマ１４ａがＩＣパッケージ２の表面に照射される。活性酸素を多く含むリモートプラズマがＩＣパッケージ２のエポキシ樹脂に照射されると、エポキシ樹脂がＨ２０とＣＯ２に分解されエッチングされる（Ｓ１０１）。 When the plasma needle 14 (remote plasma 14a) is generated, the atmospheric pressure plasma needle generator 100 is moved down in the Z-axis direction and brought close to the IC package 2 fixed to the XY stage 1, and the surface of the IC package 2 is When the distance from the opening 13t of the alumina tube 13 is constant, the distance is fixed in the Z-axis direction, and the surface of the IC package 2 is irradiated with the remote plasma 14a. When the remote plasma containing a large amount of active oxygen is irradiated onto the epoxy resin of the IC package 2, the epoxy resin is decomposed into H 2 O and CO 2 and etched (S101).
ＩＣパッケージ２のエポキシ樹脂の一部は活性酸素でエッチング可能だが、ＩＣパッケージ２のエポキシ樹脂の７０％以上を構成するシリカフィラーは活性酸素でエッチングされないため、リモートプラズマをＩＣパッケージ２のエポキシ樹脂に照射して３～１０分程度でパッケージ表面はシリカフィラーで白くなる。 A part of the epoxy resin of the IC package 2 can be etched with active oxygen, but the silica filler constituting 70% or more of the epoxy resin of the IC package 2 is not etched with active oxygen. The surface of the package becomes white with silica filler in about 3 to 10 minutes after irradiation.
そこで、シリカフィラーをパッケージ表面から除去するために超音波洗浄が行われる。リモートプラズマ１４ａによる３～１０分程度のエッチング後、ＩＣパッケージ２を超音波洗浄部４の真下に移動させ、同時に超音波洗浄部４を下方に移動させ、ＩＣパッケージ２に接近させる。 Therefore, ultrasonic cleaning is performed to remove the silica filler from the package surface. After the etching with the remote plasma 14a for about 3 to 10 minutes, the IC package 2 is moved directly below the ultrasonic cleaning unit 4, and at the same time, the ultrasonic cleaning unit 4 is moved downward to approach the IC package 2.
超音波洗浄部４に接続された水導入管１９からは水が導入され、ＩＣパッケージ２の表面に数滴たらされると表面張力でＩＣパッケージ２上に水が保持される。超音波洗浄部４とＩＣパッケージ２の表面の水滴が接した状態で、超音波洗浄部４の超音波振動子が振動することで、超音波洗浄が開始される。５～１０秒程度の超音波洗浄でシリカフィラーをＩＣパッケージ２から剥離させる。 Water is introduced from the water introduction pipe 19 connected to the ultrasonic cleaning section 4 and when several drops are dropped on the surface of the IC package 2, the water is held on the IC package 2 by surface tension. The ultrasonic cleaning is started by the vibration of the ultrasonic vibrator of the ultrasonic cleaning unit 4 in a state where the ultrasonic cleaning unit 4 and water droplets on the surface of the IC package 2 are in contact with each other. The silica filler is peeled from the IC package 2 by ultrasonic cleaning for about 5 to 10 seconds.
ＩＣパッケージ２の表面から剥離されたシリカフィラーを含んだ水を除去するために、超音波洗浄部４に接続された空気導入管２０よりＩＣパッケージ２に圧縮空気が送られ、エアージェットの力によりシリカフィラーを含んだ水を飛ばして除去し、同時にＩＣパッケージ２の表面を乾燥させる（Ｓ１０３）。 In order to remove the water containing the silica filler peeled off from the surface of the IC package 2, compressed air is sent to the IC package 2 from the air introduction pipe 20 connected to the ultrasonic cleaning unit 4, and the force of the air jet Water containing the silica filler is removed by blowing, and at the same time, the surface of the IC package 2 is dried (S103).
水滴が除去されたＩＣパッケージ２はＣＣＤカメラ３の真下に移動させ、表面状態をＰＣ１０にて観察する（Ｓ１０５）。 The IC package 2 from which the water droplets have been removed is moved directly below the CCD camera 3, and the surface state is observed by the PC 10 (S105).
ＣＣＤカメラ３を用いた観察により、ＩＣパッケージ２の開封が目的の状態まで至っていない場合（Ｓ１０７；Ｎｏ）には、ＩＣパッケージ２は再び大気圧プラズマニードル発生装置１００の下まで移動させ、エポキシ樹脂が除去され、ＩＣチップ、ボンディングワイヤが露出されるまで、上述の手順が繰り返される。ＩＣパッケージ２の開封が目的の状態まで至った場合（Ｓ１０７；Ｙｅｓ）には開封作業を終了する。 If the opening of the IC package 2 has not reached the target state as a result of observation using the CCD camera 3 (S107; No), the IC package 2 is again moved under the atmospheric pressure plasma needle generator 100, and an epoxy resin is used. The above-described procedure is repeated until the IC chip and the bonding wire are exposed. When the opening of the IC package 2 has reached the target state (S107; Yes), the opening operation is terminated.
図３Ａは、直径０．５ｍｍ、銀１００％の銀ワイヤに対して、Ａｒの流量を２．５Ｐａ・ｍ３／ｓｅｃ（１５００ｓｃｃｍ）、Ｏ２の流量を０．０７６Ｐａ・ｍ３／ｓｅｃ（４５ｓｃｃｍ）としたガスを３０分間照射した後の銀ワイヤを撮影した写真である。図３Ｂはさらに超音波洗浄を行った後に光学顕微鏡を使用して撮影した写真であり、図３Ｃはさらに超音波洗浄を行った後にＳＥＭ写真である。図４Ａ乃至Ｄは、上記条件でガスを照射した後の銀ワイヤを撮影したＳＥＭ写真である（縮尺は写真内のスケールを参照。）。 FIG. 3A shows an Ar flow rate of 2.5 Pa · m 3 / sec (1500 sccm) and an O 2 flow rate of 0.076 Pa · m 3 / sec (45 sccm) for a silver wire having a diameter of 0.5 mm and 100% silver. It is the photograph which image | photographed the silver wire after irradiating the gas made to) for 30 minutes. FIG. 3B is a photograph taken using an optical microscope after further ultrasonic cleaning, and FIG. 3C is an SEM photograph after further ultrasonic cleaning. 4A to 4D are SEM photographs obtained by photographing the silver wire after being irradiated with the gas under the above conditions (see the scale in the photograph for the scale).
図３Ａ～Ｃ及び図４Ａ～Ｄを参照すると、Ａｒ、Ｏ２のガスでエッチングした後の銀ワイヤは全体的に黒いすす（酸化銀）で覆われていることが分かる。拡大したＳＥＭ写真を参照すると、大きな酸化銀の結晶が形成されている。このように、銀ワイヤが用いられたＩＣパッケージを開封する場合、Ａｒ、Ｏ２のガスでエッチングすると、銀ワイヤが酸化して損傷を与えてしまう。 Referring to FIGS. 3A to 3C and FIGS. 4A to 4D, it can be seen that the silver wire after etching with Ar and O 2 gas is entirely covered with black soot (silver oxide). Referring to the enlarged SEM photograph, large silver oxide crystals are formed. As described above, when an IC package using a silver wire is opened, if the etching is performed with Ar or O 2 gas, the silver wire is oxidized and damaged.
他方、図５Ａ～Ｃは、直径０．５ｍｍ、銀１００％の銀ワイヤに対して、Ａｒの流量を２．５Ｐａ・ｍ３／ｓｅｃ（１５００ｓｃｃｍ）、Ｏ２の流量を０．０７６Ｐａ・ｍ３／ｓｅｃ（４５ｓｃｃｍ）、Ｈ２の流量を０．０２５Ｐａ・ｍ３／ｓｅｃ（１５ｓｃｃｍ）としたガスを３０分間照射し超音波洗浄を行った後の銀ワイヤを撮影した写真である（縮尺は写真内のスケールを参照。）。 On the other hand, FIGS. 5A to 5C show an Ar flow rate of 2.5 Pa · m 3 / sec (1500 sccm) and an O 2 flow rate of 0.076 Pa · m 3 for a silver wire having a diameter of 0.5 mm and 100% silver. This is a photograph of the silver wire after ultrasonic cleaning by irradiating a gas with a flow rate of 0.025 Pa · m 3 / sec (15 sccm) for 30 minutes / sec (45 sccm) and H 2 (scale is a photograph) (See the scale inside.)
図５Ａ～Ｃを参照すると、Ａｒ、Ｏ２、Ｈ２のガスでエッチングした後の銀ワイヤは金属光沢を残しており、銀色のままである。そして肉眼で目視できる黒いすす（酸化銀）は存在せず、銀ワイヤは損傷を受けていないことが分かる。拡大したＳＥＭ写真を参照しても、ごく小さな酸化銀の結晶が部分的に存在するのみで、酸化銀はほとんど形成されていない。このように、銀ワイヤが用いられたＩＣパッケージを開封する場合、Ａｒ、Ｏ２、Ｈ２のガスでエッチングすると、銀ワイヤが酸化して損傷させてしまうことを防ぐことができる。 Referring to FIGS. 5A-C, the silver wire after etching with Ar, O 2 , H 2 gases remains metallic and remains silver. It can be seen that there is no black soot (silver oxide) visible to the naked eye, and the silver wire is not damaged. Referring to the enlarged SEM photograph, only a very small silver oxide crystal is present, and almost no silver oxide is formed. As described above, when an IC package using a silver wire is opened, etching with Ar, O 2 , or H 2 gas can prevent the silver wire from being oxidized and damaged.
銀ワイヤが用いられたＩＣパッケージを開封する場合のＡｒ、Ｏ２、Ｈ２の流量は上述の例に限定されず、例えば、Ａｒの流量を１．７～３．４Ｐａ・ｍ３／ｓｅｃ（１０００～２０００ｓｃｃｍ）、Ｏ２の流量を０．００８～０．０８Ｐａ・ｍ３／ｓｅｃ（５～５０ｓｃｃｍ）、Ｈ２の流量を０．００８～０．０３Ｐａ・ｍ３／ｓｅｃ（５～２０ｓｃｃｍ）とした混合ガスを使用してもよい。 The flow rate of Ar, O 2 , H 2 when opening an IC package using a silver wire is not limited to the above example. For example, the flow rate of Ar is 1.7 to 3.4 Pa · m 3 / sec ( 1000 to 2000 sccm), the flow rate of O 2 is 0.008 to 0.08 Pa · m 3 / sec (5 to 50 sccm), and the flow rate of H 2 is 0.008 to 0.03 Pa · m 3 / sec (5 to 20 sccm). A mixed gas may be used.
これは、本発明のプラズマニードル発生装置を用いる場合に限られず、一般的な大気圧プラズマ発生装置を用いてＩＣパッケージを開封する場合にも同様のことが当てはまる。すなわち、本発明のプラズマニードル発生装置以外の一般的な大気圧プラズマ発生装置を用いてＩＣパッケージを開封する場合であっても、Ｈ２の混合したガスを用いることにより、銀ワイヤにダメージを与えることなく、銀ワイヤを搭載したＩＣパッケージを開封することができる。 This is not limited to the case where the plasma needle generator of the present invention is used, and the same applies to the case where the IC package is opened using a general atmospheric pressure plasma generator. That is, even when the IC package is opened using a general atmospheric pressure plasma generator other than the plasma needle generator of the present invention, the silver wire is damaged by using a gas mixed with H 2. It is possible to open the IC package on which the silver wire is mounted.
　このように、本実施形態によると、ボンディングワイヤに酸化しやすい金属が用いられている場合であっても、損傷を低減してＩＣチップを開封することが可能となる。 Thus, according to the present embodiment, even when a metal that is easily oxidized is used for the bonding wire, it is possible to reduce the damage and open the IC chip.
シリコーン樹脂または熱硬化された樹脂をエッチングする場合には、Ａｒ、Ｏ２のガスにＣＦ４を付加するとエッチングレートを高めることができる。例えば、Ａｒの流量は１．７～３．４Ｐａ・ｍ３／ｓｅｃ（１０００～２０００ｓｃｃｍ）、Ｏ２の流量は０．００８～０．０８Ｐａ・ｍ３／ｓｅｃ（５～５０ｓｃｃｍ）、ＣＦ４の流量は０．００８～０．０８Ｐａ・ｍ３／ｓｅｃ（５～５０ｓｃｃｍ）であってもよい。 In the case of etching a silicone resin or a thermally cured resin, the etching rate can be increased by adding CF 4 to Ar and O 2 gases. For example, the flow rate of Ar is 1.7 to 3.4 Pa · m 3 / sec (1000 to 2000 sccm), the flow rate of O 2 is 0.008 to 0.08 Pa · m 3 / sec (5 to 50 sccm), CF 4 The flow rate may be 0.008 to 0.08 Pa · m 3 / sec (5 to 50 sccm).
ＣＦ４を付加すると、ＡｒとＯ２の混合ガスの場合に比べて、エッチングレートは、数十倍となる。他方、ＣＦ４プラズマで生成されるＦラジカルはＳｉをエッチングしてしまうため、チップをエッチングしてしまう。したがって、ＩＣパッケージの開封が進み、ＩＣチップの露出が近くなってきたら、ＣＦ４の流入を止め、Ａｒ及びＯ２でエッチングするようにするとよい。 When CF 4 is added, the etching rate becomes several tens of times as compared with a mixed gas of Ar and O 2 . On the other hand, since F radicals generated by CF 4 plasma etch Si, the chip is etched. Therefore, when the opening of the IC package proceeds and the IC chip is almost exposed, it is preferable to stop the inflow of CF 4 and perform etching with Ar and O 2 .
（第２実施形態）
　図６は、本発明の第２実施形態による大気圧プラズマニードル発生装置を用いた半導体集積回路パッケージの開封装置の全体図を示したものである。図７及び図８は、ガイドの形状の例を示した図である。 (Second Embodiment)
FIG. 6 is an overall view of a semiconductor integrated circuit package unsealing apparatus using the atmospheric pressure plasma needle generator according to the second embodiment of the present invention. 7 and 8 are diagrams showing examples of the shape of the guide.
本発明の大気圧プラズマニードル発生装置３００は、ガイド１２、アルミナチューブ１３、外部導体１５、内部導体１６、ガス導入管１７、及びＳＭＡコネクタ１８を備える。ガイド１２を備える点以外は第１実施形態の構成と同様である。 The atmospheric pressure plasma needle generator 300 of the present invention includes a guide 12, an alumina tube 13, an outer conductor 15, an inner conductor 16, a gas introduction pipe 17, and an SMA connector 18. The configuration is the same as that of the first embodiment except that the guide 12 is provided.
ガイド１２は、エッチングの対象物を載せたＸＹステージ１（図１Ａ参照）との間で、アルミナチューブ１３の開口部１３ｔから出てくるリモートプラズマ１４ａの流路を形成し、リモートプラズマ１４ａを外側に広げ、広い面でリモートプラズマ１４ａをエッチングの対象物に照射するためのガス流路制御面１２ａを含む。ガイド１２は、アルミナチューブ１３との接続部１２ｂでアルミナチューブと接続され、円柱部分１２ｃとガス流路制御面１２ａを含んでもよい。 The guide 12 forms a flow path of the remote plasma 14a coming out from the opening 13t of the alumina tube 13 with the XY stage 1 (see FIG. 1A) on which an object to be etched is placed, and the remote plasma 14a is placed outside. And a gas flow path control surface 12a for irradiating the object to be etched with the remote plasma 14a on a wide surface. The guide 12 may be connected to the alumina tube at a connection portion 12b with the alumina tube 13, and may include a cylindrical portion 12c and a gas flow path control surface 12a.
　ガイド１２は、図７に示したような円柱状に形成してもよく、図８に示したとおり、アルミナチューブ１３の出口から内径が徐々に増加して、ガイド１２の開口部１２ｄの開口面積が、アルミナチューブ１３の開口部の開口面積より大きくなるようにコーン状に形成してもよい。ガイド１２の形状はこれに限られず、エッチングガス流が層流状態を維持してＩＣチップ表面を一様に洗うように流れるように設計し、エッチングの対象物を載せたＸＹステージ１（図１Ａ参照）との間で、アルミナチューブ１３の開口部１３ｔから出てくるリモートプラズマ１４ａの流路を形成し、リモートプラズマ１４ａを外側に広げるような形状であればよい。 The guide 12 may be formed in a columnar shape as shown in FIG. 7, and as shown in FIG. 8, the inner diameter gradually increases from the outlet of the alumina tube 13, and the opening area of the opening 12d of the guide 12 However, you may form in cone shape so that it may become larger than the opening area of the opening part of the alumina tube 13. FIG. The shape of the guide 12 is not limited to this, and the XY stage 1 (FIG. 1A) on which the etching gas flow is designed to flow so as to wash the IC chip surface uniformly while maintaining the laminar flow state, and the object to be etched is mounted thereon. The flow path of the remote plasma 14a that emerges from the opening 13t of the alumina tube 13 is formed, and the remote plasma 14a may be spread outward.
ガイド１２を用いた大気圧プラズマニードル発生装置３００を用いた半導体集積回路パッケージの開封の手順は、以下説明する点を除いて、上述した大気圧プラズマニードル発生装置１００を用いた半導体集積回路パッケージの開封装置２００による半導体集積回路パッケージの開封の手順と同様である。 The procedure for opening the semiconductor integrated circuit package using the atmospheric pressure plasma needle generator 300 using the guide 12 is the same as that of the semiconductor integrated circuit package using the atmospheric pressure plasma needle generator 100 described above, except as described below. The procedure of opening the semiconductor integrated circuit package by the opening device 200 is the same.
大気圧プラズマニードル発生装置３００において、アルミナチューブ１３の開口部１３ｔにはガイド１２が設けられる。ガス導入管１７から注入されたガスは、アルミナチューブ１３の中を通り、ガイド１２から排出される。 In the atmospheric pressure plasma needle generator 300, a guide 12 is provided in the opening 13 t of the alumina tube 13. The gas injected from the gas introduction pipe 17 passes through the alumina tube 13 and is discharged from the guide 12.
プラズマニードル１４及びリモートプラズマ１４ａが生成されると、大気圧プラズマニードル発生装置３００をＺ軸方向に下降し、ＩＣパッケージ２に接近させ、ＩＣパッケージ２の表面とガイド１２との距離が所定の距離に至ったところでＺ軸方向に固定し、リモートプラズマ１４ａがＩＣパッケージ２の表面に照射される。 When the plasma needle 14 and the remote plasma 14a are generated, the atmospheric pressure plasma needle generator 300 is lowered in the Z-axis direction to approach the IC package 2, and the distance between the surface of the IC package 2 and the guide 12 is a predetermined distance. When it reaches, it is fixed in the Z-axis direction, and the surface of the IC package 2 is irradiated with the remote plasma 14a.
　図９Ａは、本発明の第２実施形態のガイドを取り付けずにＡｒ及びＯ２の混合ガスでＩＣパッケージを開封する前に撮影した写真である。図９Ｂは、本発明の第２実施形態のガイドを取り付けずに、Ａｒ及びＯ２の混合ガス（Ａｒの流量２．４Ｐａ・ｍ３／ｓｅｃ（１４４０ｓｃｃｍ）、Ｏ２の流量０．０１Ｐａ・ｍ３／ｓｅｃ（７．５ｓｃｃｍ））で２５分間ＩＣパッケージをエッチングした様子を撮影した写真である。図９Ｃは、本発明の第２実施形態のガイドを取り付けずに、Ａｒ及びＯ２の混合ガス（Ａｒの流量２．４Ｐａ・ｍ３／ｓｅｃ（１４４０ｓｃｃｍ）、Ｏ２の流量０．０１Ｐａ・ｍ３／ｓｅｃ（７．５ｓｃｃｍ））で５０分間ＩＣパッケージをエッチングした様子を撮影した写真である。図１０Ａは、本発明の第２実施形態のガイドを取り付け、Ａｒ及びＯ２の混合ガスでＩＣパッケージを開封する前に撮影した写真である。図１０Ｂは、本発明の第２実施形態のガイドを取り付け、Ａｒ及びＯ２の混合ガス（Ａｒの流量２．４Ｐａ・ｍ３／ｓｅｃ（１４４０ｓｃｃｍ）、Ｏ２の流量０．０１Ｐａ・ｍ３／ｓｅｃ（７．５ｓｃｃｍ））で２５分間ＩＣパッケージをエッチングした様子を撮影した写真である。図１０Ｃは、本発明の第２実施形態のガイドを取り付け、Ａｒ及びＯ２の混合ガス（Ａｒの流量２．４Ｐａ・ｍ３／ｓｅｃ（１４４０ｓｃｃｍ）、Ｏ２の流量０．０１Ｐａ・ｍ３／ｓｅｃ（７．５ｓｃｃｍ））で５０分間ＩＣパッケージをエッチングした様子を撮影した写真である。 FIG. 9A is a photograph taken before opening the IC package with a mixed gas of Ar and O 2 without attaching the guide of the second embodiment of the present invention. FIG. 9B shows a mixed gas of Ar and O 2 (the flow rate of Ar is 2.4 Pa · m 3 / sec (1440 sccm), the flow rate of O 2 is 0.01 Pa · m without attaching the guide of the second embodiment of the present invention. It is the photograph which image | photographed a mode that the IC package was etched for 25 minutes at 3 / sec (7.5sccm). FIG. 9C shows a mixed gas of Ar and O 2 (Ar flow rate: 2.4 Pa · m 3 / sec (1440 sccm), O 2 flow rate: 0.01 Pa · m without attaching the guide of the second embodiment of the present invention. It is the photograph which image | photographed the mode that the IC package was etched for 50 minutes at 3 / sec (7.5sccm). FIG. 10A is a photograph taken before attaching the guide of the second embodiment of the present invention and opening the IC package with a mixed gas of Ar and O 2 . FIG. 10B shows a second embodiment of the present invention with a guide attached thereto, and a mixed gas of Ar and O 2 (Ar flow rate 2.4 Pa · m 3 / sec (1440 sccm), O 2 flow rate 0.01 Pa · m 3 / It is the photograph which image | photographed the mode that the IC package was etched for 25 minutes by sec (7.5 sccm). FIG. 10C shows a second embodiment of the present invention with a guide and a mixed gas of Ar and O 2 (Ar flow rate 2.4 Pa · m 3 / sec (1440 sccm), O 2 flow rate 0.01 Pa · m 3 / It is the photograph which image | photographed the mode that the IC package was etched for 50 minutes by sec (7.5 sccm).
　図９Ａ～Ｃを参照すると、ガイドを取り付けずにＡｒとＯ２の混合ガスでＩＣパッケージを開封する場合、５０分経過しても下にあるボンディングワイヤがほとんど埋もれており完全にはエッチングされていない。 Referring to FIGS. 9A to 9C, when an IC package is opened with a mixed gas of Ar and O 2 without attaching a guide, the underlying bonding wire is almost buried and completely etched even after 50 minutes. Absent.
　他方、図１０Ａ～Ｃを参照すると、アルミナチューブ１３の開口部１３ｔにガイド１２を取り付けてＡｒとＯ２の混合ガスでＩＣパッケージ２を開封する場合、５０分経過時には下にあるボンディングワイヤの下部も含めてきれいにエッチングされ、ボンディングワイヤがくっきりと露出されていることが分かる。 On the other hand, referring to FIGS. 10A to 10C, when the guide 12 is attached to the opening 13t of the alumina tube 13 and the IC package 2 is opened with a mixed gas of Ar and O 2 , the lower part of the bonding wire below when 50 minutes have passed. It can be seen that the bonding wire is clearly exposed and is clearly exposed.
このように、本発明の大気圧プラズマニードル発生装置３００は、上述した形状のガイド１２を取り付けることによりエッチングするＩＣパッケージ２の表面には、外部から空気が混入せず、かつ、一様にチップ表面に活性酸素が照射されるので、エッチング面積を広げることができる。エッチングガスがＩＣチップ表面を無駄なく一様に流れるようにすることができるので、ボンデイィグワイヤ下部まできれいにエッチングすることができる。また、エッチングレートを高めることができる。 As described above, the atmospheric pressure plasma needle generator 300 according to the present invention does not allow air to enter from the outside to the surface of the IC package 2 to be etched by attaching the guide 12 having the above-described shape, and uniformly chips. Since the surface is irradiated with active oxygen, the etching area can be increased. Since the etching gas can flow uniformly on the surface of the IC chip without waste, it is possible to cleanly etch the lower part of the bonding wire. In addition, the etching rate can be increased.
また、アルミナチューブ１３の先端にガイド１２を取り付けた場合、リモートプラズマ１４ａはプラズマニードル発生部から離れて面状に広がりＩＣパッケージ２に面で照射されるので、ガイド１２を取り付けずに点で照射する場合よりも低温のプラズマを照射することができ、かつ、マイクロ波によるＩＣチップへの影響を低減できるため、温度やマイクロ波によるＩＣチップへのダメージを低減することができる。 Further, when the guide 12 is attached to the tip of the alumina tube 13, the remote plasma 14a spreads in a plane shape away from the plasma needle generating portion and is irradiated onto the surface of the IC package 2, so that irradiation is performed at a point without attaching the guide 12. Since it is possible to irradiate plasma at a temperature lower than that of the case, and the influence of the microwave on the IC chip can be reduced, damage to the IC chip due to temperature and microwave can be reduced.
これは、本発明のプラズマニードル発生装置を用いる場合に限られず、一般的な大気圧プラズマ発生装置を用いてＩＣパッケージを開封する場合にも同様のことが当てはまる。すなわち、本発明のプラズマニードル発生装置以外の一般的な大気圧プラズマ発生装置を用いてＩＣパッケージを開封する場合であっても、上述した形状のガイド１２を取り付けることにより、ボンディングワイヤ下部まできれいにエッチングすることができ、また、エッチングレートを高めることができ、また、温度やマイクロ波によるＩＣチップへのダメージを低減することができる。 This is not limited to the case where the plasma needle generator of the present invention is used, and the same applies to the case where the IC package is opened using a general atmospheric pressure plasma generator. That is, even when the IC package is opened using a general atmospheric pressure plasma generator other than the plasma needle generator of the present invention, the guide 12 having the above-described shape can be attached to cleanly clean the lower part of the bonding wire. In addition, the etching rate can be increased, and damage to the IC chip due to temperature and microwaves can be reduced.
　このように、本実施形態によると、ＩＣチップを封止するエポキシ樹脂を除去する効率を高めることが可能となる。また、ＩＣチップへのダメージを低減することが可能となる。 Thus, according to the present embodiment, it is possible to increase the efficiency of removing the epoxy resin that seals the IC chip. In addition, damage to the IC chip can be reduced.
（第３実施形態）
　図１１は、本発明の第３実施形態による大気圧プラズマニードル発生装置を示した図である。 (Third embodiment)
FIG. 11 is a view showing an atmospheric pressure plasma needle generator according to a third embodiment of the present invention.
本実施形態の大気圧プラズマニードル発生装置５００は、加熱器２１、ガイド１２、アルミナチューブ１３、外部導体１５、内部導体１６、ガス導入管１７、及びＳＭＡコネクタ１８を備える。加熱器２１を備える点以外は第２実施例の構成と同様である。 The atmospheric pressure plasma needle generator 500 of this embodiment includes a heater 21, a guide 12, an alumina tube 13, an outer conductor 15, an inner conductor 16, a gas introduction pipe 17, and an SMA connector 18. Except for the point provided with the heater 21, it is the same as that of the structure of 2nd Example.
加熱器２１は、ＩＣパッケージ２の下等ＩＣパッケージ２を加熱できる場所に配置され、ＩＣパッケージ２を加熱する。加熱器２１は、ＰＣ１０によって制御され、２００℃～４００℃程度の範囲に保たれる。この場合、ＰＣ１０は温度調節器として動作する。 The heater 21 is arranged at a place where the IC package 2 can be heated below the IC package 2 and heats the IC package 2. The heater 21 is controlled by the PC 10 and is maintained in a range of about 200 ° C. to 400 ° C. In this case, the PC 10 operates as a temperature controller.
図１１には、ガイド１２を設ける例を示したが、本実施形態はこれに限られず、ガイド１２は設けなくてもよい。 Although the example which provides the guide 12 was shown in FIG. 11, this embodiment is not restricted to this, The guide 12 does not need to be provided.
大気圧プラズマニードル発生装置５００による半導体集積回路パッケージの開封の手順は、以下説明する点を除いて、上述した大気圧プラズマニードル発生装置１００、３００を用いた半導体集積回路パッケージの開封の手順と同様である。 The procedure for opening the semiconductor integrated circuit package using the atmospheric pressure plasma needle generator 500 is the same as the procedure for opening the semiconductor integrated circuit package using the atmospheric pressure plasma needle generators 100 and 300 described above, except for the points described below. It is.
大気圧プラズマニードル発生装置５００と対向して配置されるＸＹステージ１（図１Ａ参照）の加熱器２１の上には、銀ワイヤが用いられたＩＣパッケージ２が置かれる。加熱器２１はＰＣ１０により２００℃～４００℃程度の範囲の一定温度に保たれながら、ＩＣパッケージ２を加熱する。この状態で、第１実施例若しくは第２実施例の手順で、ＡｒとＯ２の混合ガスを用いて生成したプラズマを照射してＩＣパッケージを開封する。 An IC package 2 using a silver wire is placed on the heater 21 of the XY stage 1 (see FIG. 1A) disposed opposite to the atmospheric pressure plasma needle generator 500. The heater 21 heats the IC package 2 while being maintained at a constant temperature in the range of about 200 ° C. to 400 ° C. by the PC 10. In this state, the IC package is opened by irradiating plasma generated using a mixed gas of Ar and O 2 according to the procedure of the first embodiment or the second embodiment.
酸化銀は２００℃～３００℃程度で銀と酸素に分解されるので、銀ワイヤは２００℃～４００℃程度の高温では酸素プラズマにより酸化されず、損傷を防ぐことができる。したがって、大気圧プラズマニードル発生装置５００によると、銀ワイヤが用いられたＩＣパッケージ２を開封する場合に、Ｈ２ガスを使用することなく、ＡｒとＯ２の混合ガスのみで、銀ワイヤの酸化を防ぎながら開封することができる。 Since silver oxide is decomposed into silver and oxygen at about 200 ° C. to 300 ° C., the silver wire is not oxidized by oxygen plasma at a high temperature of about 200 ° C. to 400 ° C., and damage can be prevented. Therefore, according to the atmospheric pressure plasma needle generator 500, when opening the IC package 2 in which the silver wire is used, the silver wire is oxidized using only a mixed gas of Ar and O 2 without using H 2 gas. Can be opened while preventing.
これは、本発明のプラズマニードル発生装置を用いる場合に限られず、一般的な大気圧プラズマ発生装置を用いてＩＣパッケージを開封する場合にも同様のことが当てはまる。すなわち、本発明のプラズマニードル発生装置以外の一般的な大気圧プラズマ発生装置を用いてＩＣパッケージを開封する場合であっても、上述したような加熱器でＩＣパッケージを加熱した状態で開封作業を行うことにより、銀ワイヤが用いられたＩＣパッケージを開封する場合に、Ｈ２ガスを使用することなく、ＡｒとＯ２の混合ガスのみで、銀ワイヤの酸化を防ぎながら開封することができる。 This is not limited to the case where the plasma needle generator of the present invention is used, and the same applies to the case where the IC package is opened using a general atmospheric pressure plasma generator. That is, even when the IC package is opened using a general atmospheric pressure plasma generator other than the plasma needle generator of the present invention, the opening operation is performed in a state where the IC package is heated by the heater as described above. By doing so, when opening an IC package using a silver wire, it is possible to open the package while preventing oxidation of the silver wire using only a mixed gas of Ar and O 2 without using H 2 gas.
本実施形態は上述した例に限られず、Ａｒ、Ｏ２及びＨ２の混合ガスを使用して開封してもよい。 The present embodiment is not limited to the example described above, and may be opened using a mixed gas of Ar, O 2 and H 2 .
１００、３００．５００　大気圧プラズマニードル発生装置
２００　大気圧プラズマニードル発生装置を用いた半導体集積回路パッケージの開封装置
１　ＸＹステージ
２　ＩＣパッケージ
３　ＣＣＤカメラ
４　超音波洗浄部
６　オートチューナー
７　マスフローコントローラー
８　マイクロ波発振器
９　ガスボンベ
１０　ＰＣ
１２　ガイド
１３　アルミナチューブ
１３ｔ　アルミナチューブ１３の開口部
１４　プラズマニードル
１４ａリモートプラズマ
１５　外部導体
１５ｔ　外部導体の開口端
１６　内部導体
１６ｔ　内部導体の先端部
１７　ガス導入管
１８　ＳＭＡコネクタ
１９　水導入管
２０　空気導入管
２１　加熱器
  100, 300.500 Atmospheric pressure plasma needle generator 200 Semiconductor integrated circuit package unsealing apparatus 1 using an atmospheric pressure plasma needle generator 1 XY stage 2 IC package 3 CCD camera 4 Ultrasonic cleaning unit 6 Auto tuner 7 Mass flow controller 8 Micro Wave oscillator 9 Gas cylinder 10 PC
12 Guide 13 Alumina tube 13 t Opening 14 of alumina tube 13 Plasma needle 14 a Remote plasma 15 External conductor 15 t Opening end 16 of external conductor 16 Inner conductor 16 t End of internal conductor 17 Gas introduction pipe 18 SMA connector 19 Water introduction pipe 20 Air introduction Tube 21 heater

Claims (20)

  1. ガス導入部から内部にガスが導入され、一端に開口部を有するチューブ形状の絶縁体と、
    前記チューブ形状の絶縁体の外側に配置されるチューブ形状の外部導体と、
    前記チューブ形状の絶縁体の内側に配置され、前記外部導体に覆われた先端部を有する内部導体と、を備え、
    前記絶縁体、前記内部導体、及び前記外部導体を導波路として伝搬するマイクロ波及び前記ガス導入部から導入されるガスを用いて前記内部導体の先端部と前記チューブ形状の絶縁体の開口部との間にフィラメント状のプラズマニードルを発生させる大気圧プラズマニードル発生装置。     A tube-shaped insulator into which gas is introduced from the gas introduction part and having an opening at one end;
    A tube-shaped outer conductor disposed outside the tube-shaped insulator; and
    An inner conductor disposed inside the tube-shaped insulator and having a tip portion covered with the outer conductor;
    Using the microwave propagating through the insulator, the inner conductor, and the outer conductor as a waveguide and the gas introduced from the gas introduction portion, the distal end portion of the inner conductor and the opening portion of the tube-shaped insulator An atmospheric pressure plasma needle generator for generating a filamentous plasma needle between the two.
  2. 　前記内部導体の先端部より外側に前記外部導体の先端が位置し、前記外部導体の先端より外側に前記チューブ形状の絶縁体の開口部が位置する請求項１に記載の大気圧プラズマニードル発生装置。 The atmospheric pressure plasma needle generator according to claim 1, wherein the tip of the outer conductor is located outside the tip of the inner conductor, and the opening of the tube-shaped insulator is located outside the tip of the outer conductor. .
  3. 　前記外部導体の直径は、マイクロ波の波長の１/２以下の長さである請求項１又は２に記載の大気圧プラズマニードル発生装置。 3. The atmospheric pressure plasma needle generator according to claim 1 or 2, wherein the diameter of the outer conductor is 1/2 or less of the wavelength of the microwave.
  4. 　前記ガスはアルゴン及び酸素を含む請求項１乃至３のいずれかに記載の大気圧プラズマニードル発生装置。 The atmospheric pressure plasma needle generator according to any one of claims 1 to 3, wherein the gas contains argon and oxygen.
  5. 　前記ガスは水素を含む請求項１乃至４のいずれかに記載の大気圧プラズマニードル発生装置。 The atmospheric pressure plasma needle generator according to any one of claims 1 to 4, wherein the gas contains hydrogen.
  6. 　前記ガスは四フッ化炭素を含む請求項１乃至５のいずれかに記載の大気圧プラズマニードル発生装置。 The atmospheric pressure plasma needle generator according to any one of claims 1 to 5, wherein the gas contains carbon tetrafluoride.
  7. 前記チューブ形状の絶縁体の開口部に、前記開口部から放出されるガスを外側に広げるガス流路制御面を含むガイドを備える請求項１乃至６のいずれかに記載の大気圧プラズマニードル発生装置。 The atmospheric pressure plasma needle generator according to any one of claims 1 to 6, further comprising a guide including a gas flow path control surface that expands a gas emitted from the opening to the outside at an opening of the tube-shaped insulator. .
  8. 前記ガイドの開口部の開口面積は、前記チューブ形状の絶縁体の開口部の開口面積よりも大きい請求項７に記載の大気圧プラズマニードル発生装置。 The atmospheric pressure plasma needle generator according to claim 7, wherein an opening area of the opening of the guide is larger than an opening area of the opening of the tube-shaped insulator.
  9. 請求項１乃至８のいずれかに記載の大気圧プラズマニードル発生装置、及び、前記チューブ形状の絶縁体の開口部と対向する位置に半導体集積回路パッケージを配置するステージを備える半導体集積回路パッケージの開封装置。 9. Opening of a semiconductor integrated circuit package comprising the atmospheric pressure plasma needle generating device according to claim 1 and a stage for disposing the semiconductor integrated circuit package at a position facing the opening of the tube-shaped insulator. apparatus.
  10. 前記ステージの温度を調節する温度調節部を有する請求項９に記載の半導体集積回路パッケージの開封装置。 The semiconductor integrated circuit package unsealing apparatus according to claim 9, further comprising a temperature adjusting unit that adjusts a temperature of the stage.
  11. 　請求項１乃至８のいずれかに記載の大気圧プラズマニードル発生装置に半導体集積回路パッケージを配置し、
    　前記プラズマニードルを発生させ、
    　前記プラズマニードルが前記絶縁体の開口部に向かって進む過程で変化した中性ガスであるリモートプラズマを前記半導体集積回路パッケージに照射する、大気圧プラズマニードルを用いた半導体集積回路パッケージの開封方法。     A semiconductor integrated circuit package is arranged in the atmospheric pressure plasma needle generator according to any one of claims 1 to 8,
    Generating the plasma needle,
    A method for unsealing a semiconductor integrated circuit package using an atmospheric pressure plasma needle, wherein the semiconductor integrated circuit package is irradiated with remote plasma, which is a neutral gas changed in the process of the plasma needle traveling toward the opening of the insulator.
  12. 　前記大気圧プラズマニードル発生装置は、前記チューブ形状の絶縁体の開口部と対向する位置に前記半導体集積回路パッケージを配置するステージを備える請求項１１に記載の大気圧プラズマニードル発生装置を用いた半導体集積回路パッケージの開封方法。 The semiconductor using the atmospheric pressure plasma needle generator according to claim 11, wherein the atmospheric pressure plasma needle generator includes a stage for disposing the semiconductor integrated circuit package at a position facing an opening of the tube-shaped insulator. A method for opening an integrated circuit package.
  13. 前記半導体集積回路パッケージを２００℃乃至４００℃に加熱することを含む請求項１１に記載の大気圧プラズマニードルを用いた半導体集積回路パッケージの開封方法。 The method of opening a semiconductor integrated circuit package using an atmospheric pressure plasma needle according to claim 11, comprising heating the semiconductor integrated circuit package to 200 ° C. to 400 ° C.
  14. マイクロ波及びガスを用いてフィラメント状のプラズマニードルを発生させ、
    前記プラズマニードルを半導体集積回路パッケージに照射することを含み、
    前記照射によって前記半導体集積回路パッケージに用いられている半導体集積回路、ボンディングワイヤ及びボンディングパッドが露出するまで前記半導体集積回路パッケージをエッチングする、大気圧プラズマニードルを用いた半導体集積回路パッケージの開封方法。     A filamentous plasma needle is generated using microwaves and gas,
    Irradiating a semiconductor integrated circuit package with the plasma needle,
    A method of opening a semiconductor integrated circuit package using an atmospheric pressure plasma needle, wherein the semiconductor integrated circuit package is etched until the semiconductor integrated circuit, bonding wires, and bonding pads used in the semiconductor integrated circuit package are exposed by the irradiation.
  15. 　前記ガスはアルゴン及び酸素を含む請求項１４に記載の大気圧プラズマニードルを用いた半導体集積回路パッケージの開封方法。 The method of opening a semiconductor integrated circuit package using an atmospheric pressure plasma needle according to claim 14, wherein the gas contains argon and oxygen.
  16. 　前記ガスは水素を含む請求項１４又は１５に記載の大気圧プラズマニードルを用いた半導体集積回路パッケージの開封方法。 The method of opening a semiconductor integrated circuit package using an atmospheric pressure plasma needle according to claim 14 or 15, wherein the gas contains hydrogen.
  17. 　前記ガスは四フッ化炭素を含む請求項１４乃至１６のいずれかに記載の大気圧プラズマニードルを用いた半導体集積回路パッケージの開封方法。 The method for opening a semiconductor integrated circuit package using an atmospheric pressure plasma needle according to any one of claims 14 to 16, wherein the gas contains carbon tetrafluoride.
  18. 前記半導体集積回路パッケージを２００℃乃至４００℃に加熱することを含む請求項１４乃至１７のいずれかに記載の大気圧プラズマニードルを用いた半導体集積回路パッケージの開封方法。 The method for opening a semiconductor integrated circuit package using an atmospheric pressure plasma needle according to any one of claims 14 to 17, comprising heating the semiconductor integrated circuit package to 200 ° C to 400 ° C.
  19. 　所定時間の前記照射の後、
    　前記半導体集積回路パッケージを超音波で洗浄し、
    　前記半導体集積回路パッケージの表面状態をカメラで撮影し、
    　撮影した結果に基づいて前記半導体集積回路、ボンディングワイヤ及びボンディングパッドが露出されていないと判定した場合にはさらに前記照射を行う、請求項１４乃至１８のいずれかに記載の大気圧プラズマニードルを用いた半導体集積回路パッケージの開封方法。     After the irradiation for a predetermined time,
    Cleaning the semiconductor integrated circuit package with ultrasonic waves;
    The surface state of the semiconductor integrated circuit package is photographed with a camera,
    The atmospheric pressure plasma needle according to any one of claims 14 to 18, wherein the irradiation is further performed when it is determined that the semiconductor integrated circuit, the bonding wire, and the bonding pad are not exposed based on a result of photographing. A method for opening a semiconductor integrated circuit package.
  20. 請求項１４乃至１９のいずれかに記載の大気圧プラズマニードルを用いた半導体集積回路パッケージの開封方法を実行するための半導体集積回路パッケージの開封装置。 A semiconductor integrated circuit package unsealing apparatus for executing the semiconductor integrated circuit package unsealing method using the atmospheric pressure plasma needle according to any one of claims 14 to 19.
PCT/JP2016/076210 2016-09-06 2016-09-06 Atmospheric pressure plasma needle generating device, and device and method for unsealing semiconductor integrated circuit package using atmospheric pressure plasma needle WO2018047241A1 (en)

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