WO2018040499A1 - 一种双面发光的有机发光二极管照明面板 - Google Patents

一种双面发光的有机发光二极管照明面板 Download PDF

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WO2018040499A1
WO2018040499A1 PCT/CN2017/072106 CN2017072106W WO2018040499A1 WO 2018040499 A1 WO2018040499 A1 WO 2018040499A1 CN 2017072106 W CN2017072106 W CN 2017072106W WO 2018040499 A1 WO2018040499 A1 WO 2018040499A1
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layer
illumination panel
oled illumination
oled
thickness
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French (fr)
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彭其明
李先杰
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深圳市华星光电技术有限公司
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    • H10K50/125—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light
    • H10K50/13—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light comprising stacked EL layers within one EL unit
    • H10K50/131—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light comprising stacked EL layers within one EL unit with spacer layers between the electroluminescent layers
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Definitions

  • the invention belongs to the technical field of organic light emitting diode illumination, and in particular relates to a double-sided light emitting organic light emitting diode illumination panel.
  • OLED Organic Light Emitting Diode
  • LCD Organic Light Emitting Diode
  • Double-sided OLED lighting fixtures are in development.
  • U.S. Patent No. 2007/0126354 A1 discloses a double-sided light-emitting OLED device in which OLEDs are separately prepared on two transparent substrates, and then the two substrates are separately packaged and bonded to realize double-sided light emission.
  • this method requires two substrates and it is necessary to separately package each substrate, it is very expensive and complicated in arrangement.
  • Chinese patent CN 101952967 A provides another solution for preparing two layers of OLED light-emitting layers on one substrate and a third electrode between two OLED light-emitting layers, thereby realizing two layers of OLED light-emitting layers. Separate control and double-sided illumination.
  • this method requires the third electrode to be disposed, so that the layout layout is still too complicated, and since the double-sided white light is to be realized, the OLED structure is required to be high.
  • the invention provides a double-sided illumination OLED illumination panel for the deficiencies of the prior art.
  • the OLED illumination panel has a simple structure, and both sides can emit white light, and one side emits cool white light and the other side emits warm white light, and the OLED lamp is improved.
  • the use experience has increased the range of applications for OLED luminaires.
  • the present invention provides a double-sided illumination OLED illumination panel that applies a translucent silver film layer between a first luminescent layer and a second luminescent layer of a dual layer OLED.
  • the second luminescent layer when the first luminescent layer emits blue light, the second luminescent layer emits yellow light; conversely, when the first luminescent layer emits yellow light, the second luminescent layer emits blue light.
  • the OLED lighting panel comprises:
  • a cover plate disposed above the cathode and attached to the substrate
  • the material of the translucent silver film layer is silver and has a thickness of 2-20 nm.
  • the yellow light-emitting layer material is an organic small molecule fluorescent material, a polymer fluorescent material, a small molecule phosphorescent material or a polymer fluorescent material, and the constituent form is a host-guest doping form or non- The doping form has a thickness of 5-50 nm.
  • the blue light emitting layer material is an organic small molecule fluorescent material, a polymer fluorescent material, a small molecule phosphorescent material or a polymer fluorescent material, and the constituent form is a host-guest doping form or non- Doping
  • the thickness is 5-50 nm.
  • the substrate is a transparent glass substrate or a transparent flexible material substrate
  • the cover plate is a transparent glass cover or a transparent flexible material cover.
  • the material of the anode is a transparent conductive metal oxide having a thickness of from 20 to 200 nm.
  • the material of the anode is indium tin oxide or indium zinc oxide.
  • the material of the cathode is a transparent conductive metal oxide having a thickness of 20 to 200 nm.
  • the material of the cathode is indium zinc oxide.
  • the material of the hole injecting layer is an organic small molecule hole injecting material, a polymer hole injecting material or a metal oxide hole injecting material, and has a thickness of from 1 to 100 nm.
  • the organic small molecule hole injecting material is HATCN
  • the polymer hole injecting material is PEDOT:PSS (poly 3,4-ethylenedioxythiophene/polystyrenesulfonic acid) Salt
  • the metal oxide hole injecting material is MoO 3 (molybdenum trioxide).
  • the material of the electron injecting layer is one or more of a metal complex, an alkali metal, an alkali metal salt, an alkaline earth metal and an alkaline earth metal salt, and has a thickness of 0.5 to 10 nm.
  • the metal complex is lithium quinolate
  • the alkali metal is Li, Na, K, Rb or Cs
  • the alkali metal salt is LiF, Li. 2 CO 3 , LiCl, NaF, Na 2 CO 3 , NaCl, CsF, Cs 2 CO 3 or CsCl
  • the alkaline earth metal is Mg, Ca, Sr or Ba
  • the alkaline earth metal salts are CaF 2 , CaCO 3 , SrF 2 , SrCO 3 , BaF 2 or BaCO 3 .
  • the materials of the first hole transporting layer and the second hole transporting layer are both organic small molecule hole transporting materials or polymer hole transporting materials, each having a thickness of 10 to 100 nm.
  • the organic small molecule hole transporting material is NPB(N,N'-bis(1-naphthyl)-N,N'-diphenyl-4,4'-biphenyl. Diamine) or TAPC (4,4'-cyclohexyl bis[N,N-bis(4-methylphenyl)aniline]), the polymer hole transporting material is Poly-TPD (poly[double (4) -phenyl)(4-butylphenyl)amine]).
  • the materials of the first electron transport layer and the second electron transport layer are metal complex materials or imidazole electron transport materials, and have a thickness of 10 to 100 nm.
  • the metal complex material is Alq 3 (tris(8-hydroxyquinoline) aluminum), and the imidazole electron transport material is TPBi (1, 3, 5 - 3 (1) -Phenyl-1H-benzimidazol-2-yl)benzene).
  • the N-type charge generation layer is composed of an electron transport material doped low work function metal material; wherein, the doping mass ratio of the electron transport material to the low work function metal material is 1: (0.001-0.3);
  • the N-type charge generation layer has a thickness of 5 to 30 nm.
  • the low work function metal material Li or Mg In some embodiments of the invention, the low work function metal material Li or Mg.
  • the P-type charge generation layer is composed of a hole injection material or a hole injection material doped hole transport material; and the P-type charge generation layer has a thickness of 5 to 30 nm.
  • the encapsulating material comprises epoxy glue or molten glass powder.
  • the OLED lighting panel further includes a desiccant layer filled between the cover plate and the substrate.
  • FIG. 1 is a schematic structural view of a double-sided light emitting OLED lighting panel.
  • FIG. 2 is a schematic structural view of the double-sided light emitting OLED lighting panel in the embodiment.
  • Fig. 3 shows the structural formula of organic molecules used in the double-sided light-emitting OLED illumination panel in the embodiment.
  • FIG. 4 is a CIE chromaticity diagram of a white light emitted from a substrate surface and a cover surface of the double-sided light emitting OLED illumination panel in the embodiment.
  • the layout structure of the double-sided illumination OLED illumination device is relatively complicated, which limits the application of the double-sided illumination OLED illumination device.
  • the present invention applies a translucent silver film layer between the first light-emitting layer and the second light-emitting layer of the double-layer OLED for realizing double-sided light emission of the OLED lighting panel.
  • the present invention has been made based on the above method.
  • the double-sided light-emitting OLED illumination panel according to the present invention applies a translucent silver film layer between the first light-emitting layer and the second light-emitting layer of the double-layer OLED, and utilizes the translucency and reflection of the silver film layer. A double-sided illumination of the OLED lighting panel is achieved.
  • the second luminescent layer when the first luminescent layer emits blue light, the second luminescent layer emits yellow light; conversely, when the first luminescent layer emits yellow light, the second luminescent layer emits blue light, so that the two sides of the OLED lighting panel respectively emit White light of different color temperatures emits cool white light on one side and warm white light on one side.
  • the structure of the OLED illumination panel is as shown in FIG. 1.
  • the OLED illumination panel includes a substrate, an anode, a hole injection layer, and a first space.
  • the substrate is a starting layer, the anode is formed on the substrate, the hole injection layer is formed on the anode, and the first hole transport layer is formed on the hole injection layer, the first The light emitting layer is formed on the first hole transport layer, the first electron transport layer is formed on the first light emitting layer, and the N type charge generating layer is formed on the first electron transport layer, the translucent a silver film layer formed on the N-type charge generation layer formed on the translucent silver
  • the OLED lighting panel further includes a desiccant layer filled between the cap plate and the substrate to further improve the encapsulation effect.
  • the material of the translucent silver film layer is silver and has a thickness of 2-20 nm.
  • the yellow light-emitting layer material is an organic small molecule fluorescent material, a polymer fluorescent material, a small molecule phosphorescent material or a polymer fluorescent material, and the constituent form is a host-guest doping form or non- The doping form has a thickness of 5-50 nm.
  • the blue light emitting layer material is an organic small molecule fluorescent material, a polymer fluorescent material, a small molecule phosphorescent material or a polymer fluorescent material, and the constituent form is a host-guest doping form or non- The doping form has a thickness of 5-50 nm.
  • the substrate is a transparent glass substrate or a transparent flexible material substrate
  • the cover plate is a transparent glass cover or a transparent flexible material cover.
  • the material of the anode is a transparent conductive metal oxide having a thickness of from 20 to 200 nm.
  • the material of the anode is ITO (ie, Indium Tin Oxide, Indium Tin Oxide) or IZO (ie, Indium Zinc Oxide, Indium Zinc Oxide).
  • the material of the cathode is a transparent conductive metal oxide having a thickness of from 20 nm to 200 nm.
  • the material of the cathode is IZO (ie, Indium Zinc Oxide, indium zinc oxide).
  • the material of the hole injecting layer is an organic small molecule hole injecting material, a polymer hole injecting material or a metal oxide hole injecting material, and has a thickness of from 1 to 100 nm.
  • the organic small molecule hole injecting material is HATCN (ie, Dipyrazino[2,3-f:2',3'-h]quinoxaline-2,3,6,7,10, 11-hexacarbonitrile, dipyrazine [2,3-f:2',3'-h]quinoxaline-2,3,6,7,10,11-hexacarbonitrile),
  • the polymer hole injecting material It is PEDOT:PSS (poly 3,4-ethylenedioxythiophene/polystyrene sulfonate), and the metal oxide hole injecting material is MoO 3 (molybdenum trioxide).
  • the material of the electron injecting layer is one or more of a metal complex, an alkali metal, an alkali metal salt, an alkaline earth metal and an alkaline earth metal salt, and has a thickness of 0.5 to 10 nm.
  • the metal complex is lithium quinolate (Liq)
  • the alkali metal is Li, Na, K, Rb or Cs
  • the alkali metal salt is LiF, Li 2 CO 3 , LiCl, NaF, Na 2 CO 3 , NaCl, CsF, Cs 2 CO 3 or CsCl
  • the alkaline earth metal is Mg, Ca, Sr or Ba
  • the salt of the alkaline earth metal is CaF 2 , CaCO 3 , SrF 2 , SrCO 3 , BaF 2 or BaCO 3 .
  • the materials of the first hole transporting layer and the second hole transporting layer are both organic small molecule hole transporting materials or polymer hole transporting materials, each having a thickness of 10 to 100 nm.
  • the organic small molecule hole transport material is NPB (ie, N, N'-Bis-(1-naphthalenyl)-N, N'-bis-phenyl-(1,1'- Biphenyl)-4,4'-diamine, N,N'-bis(1-naphthyl)-N,N'-diphenyl-4,4'-biphenyldiamine) or TAPC (ie 4,4' -yclohexylidenebis[N,N-bis(p-tolyl)aniline], 4,4'-cyclohexyl bis[N,N-bis(4-methylphenyl)phenylamine), the polymer hole transporting material is Poly-TPD (Poly[bis(4-phenyl)(4-butylphenyl)amine], poly[bis(4-phenyl)(4-butylphenyl)amine]).
  • NPB ie, N, N'-Bis-(1-naphthalen
  • the materials of the first electron transport layer and the second electron transport layer are metal complex materials or imidazole electron transport materials, and have a thickness of 10 to 100 nm.
  • the metal complex material is Alq 3 (ie, tris (8-quinolinolato) aluminum, tris(8-hydroxyquinoline) aluminum), and the imidazole electron transport material is TPBi (That is, 1,3,5-Tris(1-phenyl-1H-benzimidazol-2-yl)benzene, 1,3,5-tris(1-phenyl-1H-benzimidazol-2-yl)benzene).
  • the N-type charge generation layer is composed of an electron transport material doped low work function metal material; wherein, the doping mass ratio of the electron transport material to the low work function metal material is 1: (0.001-0.3);
  • the N-type charge generation layer has a thickness of 5 to 30 nm.
  • the low work function metal material Li or Mg In some embodiments of the invention, the low work function metal material Li or Mg.
  • the P-type charge generation layer is composed of a hole injection material or a hole injection material doped hole transport material; and the P-type charge generation layer has a thickness of 5 to 30 nm.
  • the encapsulating adhesive material includes, but is not limited to, epoxy resin glue, molten glass powder, and the like.
  • the invention has the beneficial effects that the translucent silver film layer is applied between the blue light emitting layer and the yellow light emitting layer of the double-layer OLED, and the two sides of the OLED lighting panel are realized by the translucency and reflection of the silver film layer. Illumination, the structure is relatively simple, reducing the cost of production and the complexity of the manufacturing process.
  • the two sides of the double-sided light-emitting OLED illumination panel respectively emit white light of different color temperatures, emit cold white light on one side, and emit warm white light on one side, thereby improving the use experience of the OLED lighting fixture, and can be applied to indoor lighting places or some The special needs of the place, the application of double-sided OLED lighting devices has been improved.
  • FIG. 2 The schematic diagram of the structure of the double-sided light-emitting OLED illumination panel in this embodiment is shown in FIG. 2, and the material abbreviations, Chinese and English names and preparation methods used for each layer of the OLED illumination panel are shown in Table 1.
  • Table 1 Abbreviation of materials used in each layer of the OLED lighting panel, Chinese and English names and preparation methods
  • the first luminescent layer of the OLED illumination panel emits blue light
  • the second luminescent layer emits yellow light.
  • the CIE chromaticity diagram is as shown in FIG. 4, and the CIE coordinate value and color temperature of the white light emitted from the substrate surface and the cover surface are as shown in Table 2. Show, the schematic is shown in Figure 4.
  • Table 2 CIE coordinate values and color temperature of white light emitted from the substrate surface and the cover surface of the OLED lighting panel

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  • Optics & Photonics (AREA)
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Abstract

本发明涉及一种双面发光的OLED照明面板，其将半透明银膜层应用于蓝光发光层和黄光发光层之间，利用银膜层的半透明与反射作用，实现OLED照明面板的双面发光，结构相对简单，降低了制作成本和制作过程的复杂性，可应用于室内照明场所或者一些特殊需求的场所，提高了双面发光的OLED照明器件的应用。

Description

一种双面发光的有机发光二极管照明面板
本申请要求享有2016年8月31日提交的名称为“一种双面发光的有机发光二极管照明面板”的中国专利申请CN201610799496.2的优先权，其全部内容通过引用并入本文中。
技术领域
本发明属于有机发光二极管照明技术领域，具体涉及一种双面发光的有机发光二极管照明面板。
背景技术
有机发光二极管(Organic Light Emitting Diode，OLED)具有结构简单、超轻薄、低功耗等优良特性。目前，OLED显示器已成为一种极具发展前景的平板显示技术，并得到了各大显示器厂家的青睐。目前市面上已经出现了各式各样的采用OLED面板的显示器。从广色域、高分别率的智能手机OLED显示屏，到高对比度、广视角的大尺寸OLED电视，采用OLED面板的显示器无不呈现出比液晶面板更加优秀的表现。
相比于OLED在平板显示中的应用，OLED在照明领域的发展还处于比较初级的阶段，目前市面上的OLED照明灯具价格都十分高昂，款式也比较有限，且基本都是单面发光的灯具。
双面发光的OLED照明灯具正处于发展之中。美国专利2007/0126354A1中公开了一种双面发光OLED器件，其在两个透明衬底上分别制备OLED，然后将两个衬底分别封装并贴合从而实现双面发光。然而，由于这一方法需要两个衬底以及需要分别给每个衬底进行封装，因而价格非常昂贵且其布置复杂。中国专利CN 101952967 A提供了另一种解决方案，其在一个衬底上制备两层OLED发光层，并在两个OLED发光层之间设置一层第三电极，从而实现对两层OLED发光层的单独控制，并实现双面发光。但是这一方法由于需要设置第三电极，使得显示版面布局依然过于复杂，且由于要实现双面白光，其对OLED结构的要求较高。
因此，有必要对双面发光OLED进行改进，实现一种结构简单、双面发射白光的OLED照明面板。
发明内容
本发明针对现有技术的不足提供了一种双面发光的OLED照明面板，该OLED照明面板的结构简单，两面都可发射白光，且一面发射冷白光、另一面发射暖白光，改善了OLED灯具的使用体验，增加了OLED灯具的应用范围。
为此，本发明提供了一种双面发光的OLED照明面板，其将半透明银膜层应用于双层OLED的第一发光层和第二发光层之间。
根据本发明，当第一发光层发射蓝光时，第二发光层发射黄光；反之，当第一发光层发射黄光时，第二发光层发射蓝光。
本发明中，所述的OLED照明面板包括：
基板；
阳极，其形成于基板之上；
空穴注入层，其形成于阳极之上；
的第一空穴传输层，其形成于空穴注入层之上；
第一发光层，其形成于第一空穴传输层之上；
第一电子传输层，其形成于第一发光层之上；
N型电荷生成层，其形成于第一电子传输层之上；
半透明银膜层，其形成于N型电荷生成层之上；
P型电荷生成层，其形成于半透明银膜层之上；
第二空穴传输层，其形成于P型电荷生成层之上；
第二发光层，其形成于第二空穴传输层之上；
第二电子传输层，其形成于第二发光层之上；
电子注入层，其形成于第二电子传输层之上；
阴极，其形成于电子注入层之上；
盖板，其设于阴极上方并与基板贴合；以及
封装胶材，其用于封装基板和盖板。
根据本发明，所述半透明银膜层的材料为银，厚度为2-20nm。
在本发明的一些实施例中，所述发射黄光的光层材料为有机小分子荧光材料、聚合物荧光材料、小分子磷光材料或聚合物荧光材料，构成形式为主客体掺杂形式或非掺杂形式，厚度为5-50nm。
在本发明的另一些实施例中，所述发射蓝光的光层材料为有机小分子荧光材料、聚合物荧光材料、小分子磷光材料或聚合物荧光材料，构成形式为主客体掺杂形式或非掺杂形 式，厚度为5-50nm。
根据本发明，所述基板为透明玻璃基板或透明柔性材料基板；所述盖板为透明玻璃盖板或透明柔性材料盖板。
根据本发明，所述阳极的材料为透明导电金属氧化物，厚度为20-200nm。在本发明的一些实施例中，所述阳极的材料为氧化铟锡或氧化铟锌。
根据本发明，所述阴极的材料为透明导电金属氧化物，厚度为20-200nm。在本发明的一些实施例中，所述阴极的材料为氧化铟锌。
根据本发明，所述空穴注入层的材料为有机小分子空穴注入材料、聚合物空穴注入材料或金属氧化物空穴注入材料，厚度为1-100nm。
在本发明的一些实施例中，所述有机小分子空穴注入材料为HATCN，所述聚合物空穴注入材料为PEDOT:PSS(聚3,4-乙撑二氧噻吩/聚苯乙烯磺酸盐)，所述金属氧化物空穴注入材料为MoO3(三氧化钼)。
根据本发明，所述电子注入层的材料为金属配合物、碱金属、碱金属的盐类、碱土金属和碱土金属的盐类中的一种或多种，厚度为0.5-10nm。
在本发明的一些实施例中，所述的金属配合物为8-羟基喹啉锂，所述的碱金属为Li、Na、K、Rb或Cs，所述碱金属的盐类为LiF、Li2CO3、LiCl、NaF、Na2CO3、NaCl、CsF、Cs2CO3或CsCl，所述的碱土金属为Mg、Ca、Sr或Ba，所述碱土金属的盐类为CaF2、CaCO3、SrF2、SrCO3、BaF2或BaCO3。
根据本发明，所述第一空穴传输层和第二空穴传输层的材料均为有机小分子空穴传输材料或聚合物空穴传输材料，厚度均为10-100nm。
在本发明的一些实施例中，所述有机小分子空穴传输材料为NPB(N,N'-二(1-萘基)-N,N'-二苯基-4,4'-联苯二胺)或TAPC(4,4'-环己基二[N,N-二(4-甲基苯基)苯胺])，所述聚合物空穴传输材料为Poly-TPD(聚[双(4-苯基)(4-丁基苯基)胺])。
根据本发明，所述第一电子传输层和第二电子传输层的材料均为金属配合物材料或咪唑类电子传输材料，厚度为10-100nm。
在本发明的一些实施例中，所述的金属配合物材料为Alq3(三(8-羟基喹啉)铝)，所述咪唑类电子传输材料为TPBi(1,3,5-三(1-苯基-1H-苯并咪唑-2-基)苯)。
根据本发明，所述的N型电荷生成层由电子传输材料掺杂低功函金属材料构成；其中，电子传输材料与低功函数金属材料的掺杂质量比为1:(0.001-0.3)；所述N型电荷生成层的厚度为5-30nm。
在本发明的一些实施例中，所述的低功函金属材料Li或Mg。
根据本发明，所述的P型电荷生成层由空穴注入材料或空穴注入材料掺杂空穴传输材料构成；所述P型电荷生成层的厚度为5-30nm。
根据本发明，所述的封装胶材包括环氧树脂胶或熔融玻璃粉。
本发明中，所述的OLED照明面板还包括填充于盖板与基板之间的干燥剂层。
附图说明
下面将结合附图来说明本发明。
图1为一种双面发光的OLED照明面板的结构示意图。
图2为实施例中所述双面发光的OLED照明面板的结构示意图。
图3示出实施例中所述双面发光的OLED照明面板中所用的有机分子的结构式。
图4为实施例中所述双面发光的OLED照明面板的基板面和盖板面发射白光的CIE色度图。
具体实施方式
为使本发明容易理解，下面将详细说明本发明。
如前所述，目前双面发光的OLED照明器件的布局结构均较为复杂，限制了双面发光的OLED照明器件的应用。
发明人通过研究发现，利用银膜层的半透明与反射作用，可以实现OLED照明面板的双面发光，且该结构相对简单，降低了制作过程的复杂性，提高了双面发光的OLED照明器件的应用。本发明首次将半透明银膜层应用于双层OLED的第一发光层和第二发光层之间，用于实现OLED照明面板的双面发光。本发明正是基于上述方法作出的。
因此，本发明所涉及的双面发光的OLED照明面板是将半透明银膜层应用于双层OLED的第一发光层和第二发光层之间，利用银膜层的半透明与反射作用来实现OLED照明面板的双面发光。
根据本发明的一些实施例，当第一发光层发射蓝光时，第二发光层发射黄光；反之，当第一发光层发射黄光时，第二发光层发射蓝光，使得OLED照明面板的两面分别发射不同色温的白光，一面发射冷白光、一面发射暖白光。
在本发明的一些具体的实施例中，所述OLED照明面板的结构如图1所示，从图1可以看出，所述的OLED照明面板包括基板、阳极、空穴注入层、第一空穴传输层、第一发光层、第一电子传输层、N型电荷生成层、半透明银膜层、P型电荷生成层、第二空穴传输层、第二发光层、第二电子传输层、电子注入层、阴极、盖板以及封装胶材；其中， 所述基板为起始层，所述阳极形成于基板之上，所述空穴注入层形成于阳极之上，所述第一空穴传输层形成于空穴注入层之上，所述第一发光层形成于第一空穴传输层之上，所述第一电子传输层形成于第一发光层之上，所述N型电荷生成层形成于第一电子传输层之上，所述半透明银膜层形成于N型电荷生成层之上，所述P型电荷生成层形成于半透明银膜层之上，所述第二空穴传输层形成于P型电荷生成层之上，所述第二发光层形成于第二空穴传输层之上，所述第二电子传输层形成于第二发光层之上，所述电子注入层形成于第二电子传输层之上，所述阴极形成于电子注入层之上，所述盖板设于阴极上方并与基板贴合，所述封装胶材用于封装基板和盖板。
在本发明的一些优选实施方式中，所述的OLED照明面板还包括填充于盖板与基板之间的干燥剂层，从而进一步提高封装效果。
根据本发明，所述半透明银膜层的材料为银，厚度为2-20nm。
在本发明的一些实施例中，所述发射黄光的光层材料为有机小分子荧光材料、聚合物荧光材料、小分子磷光材料或聚合物荧光材料，构成形式为主客体掺杂形式或非掺杂形式，厚度为5-50nm。
在本发明的另一些实施例中，所述发射蓝光的光层材料为有机小分子荧光材料、聚合物荧光材料、小分子磷光材料或聚合物荧光材料，构成形式为主客体掺杂形式或非掺杂形式，厚度为5-50nm。
根据本发明，所述基板为透明玻璃基板或透明柔性材料基板；所述盖板为透明玻璃盖板或透明柔性材料盖板。
根据本发明，所述阳极的材料为透明导电金属氧化物，厚度为20-200nm。在本发明的一些实施例中，所述阳极的材料为ITO(即Indium Tin Oxide，氧化铟锡)或IZO(即Indium Zinc Oxide，氧化铟锌)。
根据本发明，所述阴极的材料为透明导电金属氧化物，厚度为20nm-200nm。在本发明的一些实施例中，所述阴极的材料为IZO(即Indium Zinc Oxide，氧化铟锌)。
根据本发明，所述空穴注入层的材料为有机小分子空穴注入材料、聚合物空穴注入材料或金属氧化物空穴注入材料，厚度为1-100nm。
在本发明的一些实施例中，所述有机小分子空穴注入材料为HATCN(即Dipyrazino[2,3-f:2',3'-h]quinoxaline-2,3,6,7,10,11-hexacarbonitrile，二吡嗪[2,3-f:2',3'-h]喹喔啉-2,3,6,7,10,11-六甲腈)，所述聚合物空穴注入材料为PEDOT:PSS(聚3,4-乙撑二氧噻吩/聚苯乙烯磺酸盐)，所述金属氧化物空穴注入材料为MoO3(三氧化钼)。
根据本发明，所述电子注入层的材料为金属配合物、碱金属、碱金属的盐类、碱土金属和碱土金属的盐类中的一种或多种，厚度为0.5-10nm。
在本发明的一些实施例中，所述的金属配合物为8-羟基喹啉锂(Liq)，所述的碱金属为Li、Na、K、Rb或Cs，所述碱金属的盐类为LiF、Li2CO3、LiCl、NaF、Na2CO3、NaCl、CsF、Cs2CO3或CsCl，所述的碱土金属为Mg、Ca、Sr或Ba，所述碱土金属的盐类为CaF2、CaCO3、SrF2、SrCO3、BaF2或BaCO3。
根据本发明，所述第一空穴传输层和第二空穴传输层的材料均为有机小分子空穴传输材料或聚合物空穴传输材料，厚度均为10-100nm。
在本发明的一些实施例中，所述有机小分子空穴传输材料为NPB(即N,N‘-Bis-(1-naphthalenyl)-N,N’-bis-phenyl-(1,1‘-biphenyl)-4,4’-diamine，N,N'-二(1-萘基)-N,N'-二苯基-4,4'-联苯二胺)或TAPC(即4,4‘-yclohexylidenebis[N,N-bis(p-tolyl)aniline]，4,4'-环己基二[N,N-二(4-甲基苯基)苯胺)，所述聚合物空穴传输材料为Poly-TPD(即Poly[bis(4-phenyl)(4-butylphenyl)amine]，聚[双(4-苯基)(4-丁基苯基)胺])。
根据本发明，所述第一电子传输层和第二电子传输层的材料均为金属配合物材料或咪唑类电子传输材料，厚度为10-100nm。
在本发明的一些实施例中，所述的金属配合物材料为Alq3(即tris(8-quinolinolato)aluminum，三(8-羟基喹啉)铝)，所述咪唑类电子传输材料为TPBi(即1,3,5-Tris(1-phenyl-1H-benzimidazol-2-yl)benzene，1,3,5-三(1-苯基-1H-苯并咪唑-2-基)苯)。
根据本发明，所述的N型电荷生成层由电子传输材料掺杂低功函金属材料构成；其中，电子传输材料与低功函数金属材料的掺杂质量比为1:(0.001-0.3)；所述N型电荷生成层的厚度为5-30nm。
在本发明的一些实施例中，所述的低功函金属材料Li或Mg。
根据本发明，所述的P型电荷生成层由空穴注入材料或空穴注入材料掺杂空穴传输材料构成；所述P型电荷生成层的厚度为5-30nm。
根据本发明，所述的封装胶材包括但不限于环氧树脂胶、熔融玻璃粉等。
本发明的有益效果为：本发明将半透明银膜层应用于双层OLED的蓝光发光层和黄光发光层之间，利用银膜层的半透明与反射作用，实现OLED照明面板的双面发光，该结构相对简单，降低了制作成本和制作过程的复杂性。
所述双面发光的OLED照明面板的两面分别发射不同色温的白光，一面发射冷白光，一面发射暖白光，提高了OLED照明灯具的使用体验，可应用于室内照明场所或者一些 特殊需求的场所，提高了双面发光的OLED照明器件的应用。
实施例
为使本发明更加容易理解，下面将结合附图和实施例来进一步详细说明本发明，这些实施例仅起说明性作用，并不局限于本发明的应用范围。本发明中所使用的原料或组分若无特殊说明均可以通过商业途径或常规方法制得。
实施例1：
本实施例中所述双面发光的OLED照明面板的结构示意图如图2所示，OLED照明面板各层所用的材料简称、中英文名称及制备方法如表1所示。
表1：所述OLED照明面板各层所用的材料简称、中英文名称及制备方法
Figure PCTCN2017072106-appb-000001
Figure PCTCN2017072106-appb-000002
所述OLED照明面板的第一发光层发射蓝光，第二发光层发射黄光，其CIE色度图如图4所示，基板面和盖板面发射白光的CIE坐标值与色温如表2所示，示意图如图4所示。
表2：所述OLED照明面板的基板面和盖板面发射白光的CIE坐标值与色温
  CIEx CIEy 色温
基板面(冷白光) 0.302 0.312 7500K
盖版面(暖白光) 0.404 0.393 3500K
应当注意的是，以上所述的实施例仅用于解释本发明，并不构成对本发明的任何限制。通过参照典型实施例对本发明进行了描述，但应当理解为其中所用的词语为描述性和解释性词汇，而不是限定性词汇。可以按规定在本发明权利要求的范围内对本发明作出修改，以及在不背离本发明的范围和精神内对本发明进行修订。尽管其中描述的本发明涉及特定的方法、材料和实施例，但是并不意味着本发明限于其中公开的特定例，相反，本发明可扩展至其他所有具有相同功能的方法和应用。

Claims (20)

  1. 一种双面发光的有机发光二极管照明面板，其将半透明银膜层应用于双层有机发光二极管的第一发光层和第二发光层之间。
  2. 根据权利要求1所述的有机发光二极管照明面板，其中，当第一发光层发射蓝光时，第二发光层发射黄光；反之，当第一发光层发射黄光时，第二发光层发射蓝光。
  3. 根据权利要求2所述的有机发光二极管照明面板，其中，所述的有机发光二极管照明面板包括：
    基板；
    阳极，其形成于基板之上；
    空穴注入层，其形成于阳极之上；
    的第一空穴传输层，其形成于空穴注入层之上；
    第一发光层，其形成于第一空穴传输层之上；
    第一电子传输层，其形成于第一发光层之上；
    N型电荷生成层，其形成于第一电子传输层之上；
    半透明银膜层，其形成于N型电荷生成层之上；
    P型电荷生成层，其形成于半透明银膜层之上；
    第二空穴传输层，其形成于P型电荷生成层之上；
    第二发光层，其形成于第二空穴传输层之上；
    第二电子传输层，其形成于第二发光层之上；
    电子注入层，其形成于第二电子传输层之上；
    阴极，其形成于电子注入层之上；
    盖板，其设于阴极上方并与基板贴合；以及
    封装胶材，其用于封装基板和盖板。
  4. 根据权利要求3所述的有机发光二极管照明面板，其中，所述半透明银膜层的材料为银，厚度为2-20nm。
  5. 根据权利要求3所述的有机发光二极管照明面板，其中，所述发射黄光的光层材料为有机小分子荧光材料、聚合物荧光材料、小分子磷光材料或聚合物荧光材料；其构成形式为主客体掺杂形式或非掺杂形式；厚度为5-50nm。
  6. 根据权利要求3所述的有机发光二极管照明面板，其中，所述发射蓝光的光层材料为有机小分子荧光材料、聚合物荧光材料、小分子磷光材料或聚合物荧光材料；其构成形式为主客体掺杂形式或非掺杂形式；厚度为5-50nm。
  7. 根据权利要求3所述的有机发光二极管照明面板，其中，所述基板为透明玻璃基板或透明柔性材料基板；
    所述盖板为透明玻璃盖板或透明柔性材料盖板；
    所述阳极的材料为透明导电金属氧化物，厚度为20-200nm；
    所述阴极的材料为透明导电金属氧化物，厚度为20-200nm。
  8. 根据权利要求7所述的有机发光二极管照明面板，其中，所述阳极的材料为氧化铟锡或氧化铟锌；所述阴极的材料为氧化铟锌。
  9. 根据权利要求3所述的有机发光二极管照明面板，其中，所述空穴注入层的材料为有机小分子空穴注入材料、聚合物空穴注入材料或金属氧化物空穴注入材料，厚度为1-100nm。
  10. 根据权利要求9所述的有机发光二极管照明面板，其中，所述有机小分子空穴注入材料为HATCN(二吡嗪[2,3-f:2',3'-h]喹喔啉-2,3,6,7,10,11-六甲腈)，所述聚合物空穴注入材料为PEDOT:PSS(聚3,4-乙撑二氧噻吩/聚苯乙烯磺酸盐)，所述金属氧化物空穴注入材料为MoO3(三氧化钼)。
  11. 根据权利要求3所述的有机发光二极管照明面板，其中，所述电子注入层的材料为金属配合物、碱金属、碱金属的盐类、碱土金属和碱土金属的盐类中的一种或多种，厚度为0.5-10nm。
  12. 根据权利要求11所述的有机发光二极管照明面板，其中，所述的金属配合物为8-羟基喹啉锂；所述的碱金属为Li、Na、K、Rb或Cs；所述碱金属的盐类为LiF、Li2CO3、LiCl、NaF、Na2CO3、NaCl、CsF、Cs2CO3或CsCl；所述的碱土金属为Mg、Ca、Sr或Ba；所述碱土金属的盐类为CaF2、CaCO3、SrF2、SrCO3、BaF2或BaCO3。
  13. 根据权利要求3所述的有机发光二极管照明面板，其中，所述第一空穴传输层和第二空穴传输层的材料均为有机小分子空穴传输材料或聚合物空穴传输材料，厚度均为10-100nm。
  14. 根据权利要求13所述的有机发光二极管照明面板，其中，所述有机小分子空穴传输材料为NPB(N,N'-二(1-萘基)-N,N'-二苯基-4,4'-联苯二胺)或TAPC(4,4'-环己基二[N,N-二(4-甲基苯基)苯胺])，所述聚合物空穴传输材料为Poly-TPD(聚[双(4-苯基)(4-丁基苯基)胺])。
  15. 根据权利要求3所述的有机发光二极管照明面板，其中，所述第一电子传输层和第二电子传输层的材料均为金属配合物材料或咪唑类电子传输材料，厚度为10-100nm。
  16. 根据权利要求15所述的有机发光二极管照明面板，其中，所述的金属配合物材料为Alq3(三(8-羟基喹啉)铝)，所述咪唑类电子传输材料为TPBi(1,3,5-三(1-苯基-1H-苯并咪唑-2-基)苯)。
  17. 根据权利要求3所述的有机发光二极管照明面板，其中，所述的N型电荷生成层由电子传输材料掺杂低功函金属材料构成；其中，电子传输材料与低功函数金属材料的掺杂质量比为1:(0.001-0.3)；所述N型电荷生成层的厚度为5-30nm。
  18. 根据权利要求17所述的有机发光二极管照明面板，其中，所述的低功函金属材料Li或Mg。
  19. 根据权利要求3所述的有机发光二极管照明面板，其中，所述的P型电荷生成层由空穴注入材料或空穴注入材料掺杂空穴传输材料构成；所述P型电荷生成层的厚度为5-30nm；所述的封装胶材为环氧树脂胶或熔融玻璃粉。
  20. 根据权利要求3所述的有机发光二极管照明面板，其中，所述的有机发光二极管照明面板还包括填充于盖板与基板之间的干燥剂层。
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